MOS tube temperature measuring device

Abstract

The invention provides an MOS tube temperature measuring device, and relates to the technical field of semiconductors. The MOS tube temperature measuring device comprises a PCB, an MOS tube, a copper column and a temperature sensor, a drain copper foil is arranged on the PCB, the MOS tube is electrically connected to the drain copper foil, and the orthographic projection area of the drain copper foil on the PCB is larger than that of the MOS tube on the PCB; the copper column is fixed on the drain electrode copper foil, and the copper column is provided with an inner cavity; and the temperature sensor is arranged in the inner cavity of the copper column so as to detect the temperature of the MOS tube. The MOS tube temperature measuring device provided by the invention is relatively small in structural size and relatively high in temperature detection efficiency of the MOS tube.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a MOS transistor temperature measurement device. Background Art

[0002] Surface mount MOS transistors (metal-oxide-semiconductor field effect transistors), as core semiconductor devices, are widely used in fields such as power electronics, communication equipment, and automotive electronics. Their operating temperature directly affects device performance, reliability, and lifespan. Especially in high-temperature and high-power scenarios, accurately monitoring the temperature of MOS transistors is a key requirement to ensure the stable operation of the system. However, limited by the trend of device miniaturization and high integration, how to achieve efficient and high-precision temperature detection in a limited space has become an important challenge in semiconductor packaging and thermal management technologies.

[0003] Currently, the temperature detection of surface mount MOS transistors mainly relies on arranging temperature sensors on a PCB (Printed Circuit Board), and indirectly obtaining the temperature through the heat conduction of the PCB. This method has insufficient temperature detection accuracy due to the long heat conduction path and high thermal resistance. Summary of the Invention

[0004] This application provides a MOS transistor temperature measurement device with a relatively small structural volume and high temperature detection efficiency for MOS transistors.

[0005] To achieve the above object, this application provides the following technical solutions:

[0006] This application provides a MOS transistor temperature measurement device, which includes:

[0007] A PCB board and a MOS transistor. A drain copper foil is provided on the PCB board, and the MOS transistor is electrically connected to the drain copper foil. The orthographic projection area of the drain copper foil on the PCB board is larger than the orthographic projection area of the MOS transistor on the PCB board;

[0008] A copper pillar fixed to the drain copper foil, and the copper pillar has an inner cavity;

[0009] A temperature sensor disposed in the inner cavity of the copper pillar to detect the temperature of the MOS transistor.

[0010] In a possible implementation, along the thickness direction of the PCB board, the MOS transistor and the copper pillar are respectively located on two opposite surfaces of the PCB board, and the orthographic projection of the MOS transistor on the PCB board and the orthographic projection of the copper pillar on the PCB board at least partially overlap;

[0011] Alternatively, the MOS transistor and the copper pillar are located on one side surface of the PCB board, and the copper pillar is disposed close to the MOS transistor.

[0012] In a possible implementation, the orthographic projection area of ​​the drain copper foil on the PCB board is 15%-25% larger than the orthographic projection area of ​​the MOS tube on the PCB board.

[0013] In a possible implementation, the diameter of the copper column is 3-5 mm; and / or the height of the copper column is 5-15 mm.

[0014] In a possible implementation, the MOS tube temperature measuring device further includes a heat conductive medium layer, which is filled in the inner cavity of the copper column and is located between the temperature sensor and the copper column.

[0015] In a possible implementation, the thickness of the heat conductive medium layer is 0.2 mm to 1 mm.

[0016] In a possible implementation, the heat-conducting medium layer is a thermally conductive silicone grease layer, and its thermal conductivity is 2.0-4.0 W / (m·K).

[0017] In a possible implementation manner, the drain copper foil has a circular pad area, and the copper column is welded to the circular pad area.

[0018] In a possible implementation, the diameter of the circular pad area is 1-3 mm larger than the diameter of the copper column.

[0019] In a possible implementation manner, the end of the copper column facing away from the PCB board is sealed with a sealing cover to seal the inner cavity.

[0020] The MOS tube temperature measuring device provided in this application has at least the following beneficial effects:

[0021] The drain copper foil is designed on the PCB substrate, and its orthographic projection area is larger than the MOS tube body. By expanding the copper foil area, the thermal resistance is reduced to form an efficient heat conduction matrix; a copper column with an inner cavity is vertically fixed at the center of the drain copper foil, and the rigid support and short-path heat conduction characteristics of the copper column are used to directly guide the heat of the MOS tube to the built-in temperature sensor; the sensor is embedded in the copper column cavity and is in full contact with the copper column through a thermal conductive medium (such as silicone grease), eliminating the air gap thermal resistance and achieving close coupling between the heat source and the sensor. This design breaks through the accuracy bottleneck of traditional patch-type indirect temperature measurement through the three-level optimization of "drain copper foil expansion-copper column heat conduction treatment-sensor embedding", while avoiding the interference of plug-in installation on heat dissipation, and has the advantages of high precision, easy installation and low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0023] Figure 1 It is a schematic structural diagram of the MOS transistor temperature measurement device provided by the embodiment of the present application;

[0024] Figure 2 is Figure 1 the top view of;

[0025] Figure 3 It is a schematic structural diagram of the MOS transistor temperature measurement device provided by another embodiment of the present application;

[0026] Figure 4 is Figure 3 the top view of.

[0027] Explanation of the reference numerals:

[0028] 100, PCB board;

[0029] 110, the first surface; 120, the second surface;

[0030] 200, MOS transistor;

[0031] 300, copper pillar;

[0032] 310, inner cavity.

[0033] Through the above accompanying drawings, the clear embodiments of the present application have been shown, and there will be more detailed descriptions hereinafter. These accompanying drawings and text descriptions are not intended to limit the scope of the concept of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. Detailed implementation manners

[0034] As described in the background art, surface-mounted MOS transistors (metal-oxide-semiconductor field-effect transistors), as core semiconductor devices, are widely used in fields such as power electronics, communication equipment, and automotive electronics. Their operating temperature directly affects the device performance, reliability, and lifespan.

[0035] Especially in high-temperature and high-power scenarios, accurately monitoring the temperature of MOS transistors is a key requirement to ensure the stable operation of the system. However, limited by the trend of device miniaturization and high integration, how to achieve efficient and high-precision temperature detection in a limited space has become an important challenge in semiconductor packaging and thermal management technologies.

[0036] Currently, the temperature detection of surface-mounted MOS transistors mainly relies on arranging temperature sensors on the PCB and indirectly obtaining the temperature through the heat conduction of the PCB. Due to the long heat conduction path and high thermal resistance, the temperature detection accuracy is insufficient.

[0037] Through research by the inventor, it is found that although the existing temperature detection methods can achieve the detection of MOS transistor temperature to a certain extent, for surface-mounted temperature detection, since the MOS transistor temperature is indirectly detected through the heat conduction of the PCB, the loss of heat conduction may affect the accuracy of temperature detection.

[0038] In addition, the installation of surface-mounted sensors requires occupying the area of the PCB, which may become a problem in application scenarios with limited space.

[0039] Secondly, for plug-in temperature detection, although the MOS transistor temperature can be directly detected, since the temperature sensor needs to be fixed by screws, this not only increases the installation complexity but also may affect the heat dissipation performance of the MOS transistor. Therefore, how to improve the detection accuracy of the temperature sensor while simplifying the installation process is an important challenge faced by the current technology.

[0040] To address the above technical problems, the embodiment of the present application provides a MOS transistor temperature measurement device. A drain copper foil is designed on the PCB substrate, and its orthographic projection area is larger than the MOS transistor body. The thermal resistance is reduced by amplifying the copper foil area to form an efficient heat conduction matrix. A copper column with an inner cavity is vertically fixed at the center of the drain copper foil. By utilizing the rigid support and short-path heat conduction characteristics of the copper column, the heat of the MOS transistor is directly guided to the built-in temperature sensor. The sensor is embedded in the inner cavity of the copper column and is in full contact with the copper column through a heat-conducting medium (such as silicone grease) to eliminate the air-gap thermal resistance and achieve close coupling between the heat source and the sensor. Through the three-level optimization of "expanding the area of the drain copper foil - heat conduction treatment of the copper column - embedding the sensor", this design breaks through the accuracy bottleneck of traditional surface-mounted indirect temperature measurement, and at the same time avoids the interference of plug-in installation on heat dissipation, and has the advantages of high accuracy, easy installation, and low cost.

[0041] In order to make the above objects, features, and advantages of the embodiments of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of the present application.

[0042] Combined with Figures 1 to 4, the MOS transistor temperature measurement device provided by the embodiment of the present application includes a PCB board 100, a MOS transistor 200, a copper column 300, and a temperature sensor. A drain copper foil is provided on the surface of the PCB board 100. The MOS transistor 200 is electrically connected to the drain copper foil. The orthographic projection area of the drain copper foil on the PCB board 100 is larger than the orthographic projection area of the MOS transistor 200 on the PCB board 100; the copper column 300 is fixed to the drain copper foil, and the copper column 300 has an inner cavity; the temperature sensor is arranged in the inner cavity of the copper column 300 to detect the temperature of the MOS transistor 200.

[0043] Among them, the drain copper foil is the electrical and heat conduction carrier of the drain of the MOS transistor 200, and its projection area is larger than the body of the MOS transistor 200 to expand the heat conduction path. The copper column 300 is welded to the drain copper foil, and the inner cavity is used to accommodate the temperature sensor to form a direct thermal coupling channel.

[0044] In this way, by increasing the area of the drain copper foil, the thermal resistance is reduced, and the temperature detection accuracy is improved. The design of the inner cavity of the copper column 300 simplifies the installation of the sensor and avoids external interference. That is to say, by increasing the area of the copper foil, the thermal resistance is reduced to form an efficient heat conduction matrix; a copper column with an inner cavity is vertically fixed at the center of the drain copper foil. By using the rigid support and short-path heat conduction characteristics of the copper column, the heat of the MOS transistor is directly guided to the built-in temperature sensor; the sensor is embedded in the inner cavity of the copper column and is in full contact with the copper column through a heat-conducting medium (such as silicone grease) to eliminate the thermal resistance of the air gap and achieve close coupling between the heat source and the sensor.

[0045] Exemplarily, the PCB board 100 uses a Flame Retardant 4 substrate (abbreviated as FR4), which is a flame-retardant PCB substrate material made by compounding epoxy resin and fiberglass cloth. The area of the drain copper foil is 20% larger than that of the MOS transistor 200. The copper column 300 has a diameter of 4 mm and a height of 10 mm. A TCN75 temperature sensor is inserted into the inner cavity, which is a high-precision digital sensor and can better meet the temperature detection requirements of the MOS transistor 200.

[0046] In some embodiments, along the thickness direction of the PCB board 100, the MOS transistor 200 and the copper column 300 are respectively located on two opposite surfaces of the PCB board 100, and the orthographic projection of the MOS transistor 200 on the PCB board 100 and the orthographic projection of the copper column 300 on the PCB board 100 at least partially overlap; or, the MOS transistor 200 and the copper column 300 are located on one side surface of the PCB board 100, and the copper column 300 is arranged close to the MOS transistor 200.

[0047] Among them, the PCB board 100 has opposite first surface 110 and second surface 120 along its own board thickness direction, that is, the first surface 110 and the second surface 120 are the top surface and the bottom surface of the PCB board 100 respectively. The MOS transistor 200 is located on the top surface of the PCB board 100, and the copper pillar 300 is located on the bottom surface. The projection parts of the two overlap. The MOS transistor 200 and the copper pillar 300 are connected by the drain copper foil disposed in the heat conduction vias or metallized vias inside the PCB board 100, and the MOS transistor 200 can transfer heat to the copper pillar 300.

[0048] In this way, the layout scheme with the PCB board 100 disposed on both sides realizes space optimization. The MOS transistor 200 and the copper pillar 300 are arranged by using the double-sided space of the PCB board 100, which adapts to the high-density integration scenario, reduces the interference of the heat of the MOS transistor 200 on the components on the same side. The copper pillar 300 located on the back can be connected to an external radiator to improve the heat dissipation efficiency.

[0049] Exemplarily, the PCB board 100 is an FR4 substrate (with a thickness of 1.6 mm). A heat conduction via array (with a hole diameter of 0.3 mm, a pitch of 1 mm, and the holes filled with heat conduction epoxy resin) is arranged in the projection area of the MOS transistor 200. The copper pillar 300 (with a diameter of 4 mm and a height of 8 mm) is welded to the corresponding projection area on the bottom layer of the PCB, and is connected to the drain copper foil of the top-layer MOS transistor 200 through the heat conduction vias. Among them, the number and density of the vias need to be optimized through thermal simulation. The step soldering process is adopted to weld the copper pillar 300 and the MOS transistor 200 to the drain copper foil preset on the PCB board 100 to avoid the conflict of the welding temperature between the copper pillar 300 and the MOS transistor 200.

[0050] In some other examples, both the MOS transistor 200 and the copper pillar 300 are located on the same side of the PCB board 100. For example, both the MOS transistor 200 and the copper pillar 300 are located on the first surface 110 of the PCB board 100, and the copper pillar 300 is arranged adjacent to the MOS transistor 200, and short-path heat conduction is realized through the drain copper foil on the PCB surface.

[0051] Among them, the distance between the copper pillar 300 and the MOS transistor 200 needs to be ≥ 2 mm to avoid mechanical interference. Further, heat dissipation fins can be provided on the top of the copper pillar 300 to improve the convective heat dissipation efficiency.

[0052] With such a design, setting the MOS transistor 200 and the copper pillar 300 on the same side of the PCB board 100 can shorten the heat conduction path, reduce the thermal resistance, is easy to install, and the single-sided soldering process simplifies the production process without complex via design.

[0053] Exemplarily, the MOS transistor 200 (TO-252 package) and the copper pillar 300 (diameter 5 mm, height 12 mm) are both located on the first surface 110 (top layer), with a spacing of 3 mm. The copper pillar 300 is directly connected through an enlarged drain copper foil (area increased by 20%), and TSR-300 thermal grease (thickness 0.5 mm) is filled.

[0054] In some embodiments, the orthographic projection area of the drain copper foil on the PCB board 100 is 15%-25% larger than the orthographic projection area of the MOS transistor 200 on the PCB board 100.

[0055] Exemplarily, the orthographic projection area of the drain copper foil on the PCB board 100 is 15% larger than the orthographic projection area of the MOS transistor 200 on the PCB board 100, or the orthographic projection area of the drain copper foil on the PCB board 100 is 25% larger than the orthographic projection area of the MOS transistor 200 on the PCB board 100, or the orthographic projection area of the drain copper foil on the PCB board 100 is 20% larger than the orthographic projection area of the MOS transistor 200 on the PCB board 100.

[0056] With such a design, if the proportion of the orthographic projection area of the drain copper foil on the PCB board 100 that is larger than the orthographic projection area of the MOS transistor 200 on the PCB board 100 is less than 15%, the reduction in thermal resistance is insufficient, while if it is more than 25%, it will occupy too much area of the PCB board 100. A balance between performance and compactness is achieved within the range of 15%-25%.

[0057] In some embodiments, the diameter of the copper pillar 300 is 3-5 mm. Exemplarily, the diameter of the copper pillar 300 is 3 mm, or the diameter of the copper pillar 300 is 4 mm, or the diameter of the copper pillar 300 is 5 mm. If the diameter is too small, the thermal conduction cross-section will be insufficient, and if it is too large, the space occupancy rate will increase.

[0058] In some embodiments, the height of the copper pillar 300 is 5-15 mm. For example, the height of the copper pillar 300 is 5 mm, or the height of the copper pillar 300 is 10 mm, or the height of the copper pillar 300 is 15 mm. It can be understood that if the height of the copper pillar 300 is too low, the installation space for the sensor will be limited, and if it is too high, the length of the thermal conduction path will increase.

[0059] In some embodiments, the MOS transistor 200 temperature measurement device further includes a thermal conductive medium layer, which is filled in the inner cavity of the copper pillar 300 and is located between the temperature sensor and the copper pillar 300.

[0060] Among them, the thermal conductive medium layer fills the inner cavity of the copper pillar 300, eliminating the thermal resistance of the air gap, thereby ensuring full contact between the sensor and the copper pillar 300 and enhancing the continuity of thermal conduction.

[0061] For example, the thermal conductive medium layer is filled with TSR-300 thermal conductive silicone grease, with a thermal conductivity of 3.0W / (m·K) and a temperature measurement accuracy of ±0.1°C.

[0062] In some embodiments, the thickness of the thermal conductive medium layer is 0.2 mm to 1 mm, which can balance thermal conductivity efficiency and structural stability. For example, the thickness of the thermal conductive medium layer is 0.2 mm, or the thickness of the thermal conductive medium layer is 0.6 mm, or the thickness of the thermal conductive medium layer is 1 mm.

[0063] In this way, the gap between the sensor and the copper column can be controlled to ensure that the thickness of the thermal conductive medium is limited to an appropriate range. If the thermal conductive medium layer is too thick, it will affect the temperature change rate of the sensor and cannot detect the temperature rise of the MOS tube in time.

[0064] It should be noted that if the thermal conductive medium layer is too thin, gaps may easily form, while if it is too thick, the fit of the sensor may be affected.

[0065] In some embodiments, the thermal conductive medium layer is a thermal grease layer having a thermal conductivity of 2.0-4.0 W / (m·K). For example, the thermal conductivity of the thermal grease layer is 2 W / (m·K), or the thermal conductivity of the thermal grease layer is 3 W / (m·K), or the thermal conductivity of the thermal grease layer is 4 W / (m·K). The thermal grease layer has better performance within this thermal conductivity range, and the thermal resistance below 2.0 W / (m·K) is too high.

[0066] In some embodiments, the drain copper foil has a circular pad area, and the copper pillar 300 is welded to the circular pad area. The circular pad ensures uniform force and heat distribution during welding of the copper pillar 300. The circular structure avoids stress concentration at sharp corners and improves welding reliability.

[0067] For example, the diameter of the circular pad area is 9 mm, and the diameter of the copper pillar 300 is 4 mm, and the shear strength of the two after welding is relatively high.

[0068] In some embodiments, the diameter of the circular pad area is 1-3 mm larger than the diameter of the copper pillar 300. For example, the diameter of the circular pad area is 7 mm, and the diameter of the copper pillar 300 is 4 mm; or, the diameter of the circular pad area is 6 mm, and the diameter of the copper pillar 300 is 4 mm; or, the diameter of the circular pad area is 4 mm, and the diameter of the copper pillar 300 is 3 mm. The size of the circular pad area is further optimized to ensure sufficient welding area and improve the space utilization of the PCB board 100.

[0069] In some embodiments, the end of the copper column 300 facing away from the PCB board 100 is sealed with a sealing cover to seal the inner cavity. The sealing cover prevents the heat-conducting medium from overflowing and protects the sensor, and also avoids aging and contamination of silicone grease, thereby extending the service life of the device.

[0070] Exemplarily, the sealing cover is made of high-temperature resistant ABS plastic. The sealing cover is threadedly connected to the side wall of the copper column 300, and the sealing cover can withstand a temperature environment of -40°C to 150°C. Alternatively, the sealing cover is adhesively sealed to the inner side wall of the copper column 300, with a relatively low cost.

[0071] It should be noted that in the embodiments of the present application, the temperature sensor detects the temperature of the MOS transistor through an NTC (negative temperature coefficient) thermistor. Its core principle is based on the resistance-temperature characteristic and the signal conversion of the voltage division circuit, combined with the signal processing of the on-board MCU to achieve high-precision temperature monitoring.

[0072] Among them, the temperature sensor is thermally coupled to the MOS transistor in the following manner: the sensor is embedded in the inner cavity of the copper column and is in close contact with the copper column through thermal conductive grease. The copper column is welded to the drain copper foil of the MOS transistor to form a short-path heat conduction chain (MOS transistor → drain copper foil → copper column → thermal conductive grease → temperature sensor).

[0073] In this way, the present application realizes the rapid and high-precision detection of the MOS transistor temperature through the core solution of NTC thermistor voltage division detection + MCU signal processing, combined with the low thermal resistance mechanical structure design (amplified copper foil, copper column, thermal conductive grease). Its advantages are low hardware cost, fast response speed, and effectively solves the problem of heat conduction loss in traditional indirect temperature measurement through structural optimization, and is applicable to high-reliability power electronic systems.

[0074] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present application.

[0075] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features.

[0076] In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0077] In this application, unless otherwise clearly stipulated or defined, terms such as "install", "connect", "join", "fix", etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0078] In this application, unless otherwise clearly stipulated or defined, the first feature being "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium.

[0079] Moreover, the first feature being "above", "over" and "on top of" the second feature can be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0080] The various embodiments or implementation manners in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the various embodiments, reference can be made to each other.

[0081] It should be noted that the embodiments referred to as "an embodiment", "embodiment", "exemplary embodiment", "some embodiments", etc. in the specification may include specific features, structures or characteristics, but not every embodiment necessarily includes such specific features, structures or characteristics.

[0082] In addition, such phrases do not necessarily refer to the same embodiment. Moreover, when combining an embodiment to describe a specific feature, structure or characteristic, it is within the knowledge scope of those skilled in the art to implement such a feature, structure or characteristic in combination with other embodiments, whether explicitly or implicitly described.

[0083] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of this application, rather than to limit them; although this application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the various embodiments of this application.

Claims

1. A MOS tube temperature measuring device, characterized in that: include: A PCB board and a MOS tube, wherein the PCB board is provided with a drain copper foil, the MOS tube is electrically connected to the drain copper foil, and the orthographic projection area of ​​the drain copper foil on the PCB board is larger than the orthographic projection area of ​​the MOS tube on the PCB board; A copper column, fixed to the drain copper foil, wherein the copper column has an inner cavity; The temperature sensor is arranged in the inner cavity of the copper column to detect the temperature of the MOS tube.

2. The MOS tube temperature measuring device according to claim 1, characterized in that: Along the thickness direction of the PCB board, the MOS tube and the copper pillar are respectively located on two opposite surfaces of the PCB board, and the orthographic projection of the MOS tube on the PCB board at least partially overlaps with the orthographic projection of the copper pillar on the PCB board; Alternatively, the MOS tube and the copper column are located on one side surface of the PCB board, and the copper column is arranged close to the MOS tube.

3. The MOS tube temperature measuring device according to claim 1 or 2, characterized in that: The orthographic projection area of ​​the drain copper foil on the PCB board is 15%-25% larger than the orthographic projection area of ​​the MOS tube on the PCB board.

4. The MOS tube temperature measuring device according to claim 1 or 2, characterized in that: The diameter of the copper column is 3-5 mm; and / or the height of the copper column is 5-15 mm.

5. The MOS tube temperature measuring device according to claim 1 or 2, characterized in that: The MOS tube temperature measuring device also includes a heat-conducting medium layer, which is filled in the inner cavity of the copper column and is located between the temperature sensor and the copper column.

6. The MOS tube temperature measuring device according to claim 5, characterized in that: The thickness of the heat-conducting medium layer is 0.2 mm to 1 mm.

7. The MOS tube temperature measuring device according to claim 5, characterized in that: The heat-conducting medium layer is a heat-conducting silicone grease layer, and its thermal conductivity is 2.0-4.0 W / (m·K).

8. The MOS tube temperature measuring device according to claim 1 or 2, characterized in that: The drain copper foil has a circular pad area, and the copper column is welded to the circular pad area.

9. The MOS tube temperature measuring device according to claim 8, characterized in that: The diameter of the circular pad area is 1-3 mm larger than the diameter of the copper column.

10. The MOS tube temperature measuring device according to claim 1 or 2, characterized in that: The end of the copper column facing away from the PCB board is sealed with a sealing cover to seal the inner cavity.

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