Fluid supply system, substrate processing method, and recording medium

By designing a fluid supply system including two supply flow paths, heating mechanism and flow adjustment mechanism, the problem of handling fluid countercurrent is solved, and the efficiency and thoroughness of substrate processing is achieved.

CN120199701APending Publication Date: 2025-06-24TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202411805245.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-22
Filing Date
2024-12-10
Publication Date
2025-06-24

AI Technical Summary

Technical Problem

The prior art is difficult to effectively suppress the counterflow of the processing fluid, which makes it difficult to remove the residue of IPA during substrate processing.

Method used

A fluid supply system is designed, including two supply flow paths, corresponding heating mechanisms and flow adjustment mechanisms. By controlling the temperature and flow of the fluid, the stable supply of the treatment fluid in the substrate processing container is ensured and countercurrent is prevented.

Benefits of technology

The counterflow of the treatment fluid is effectively suppressed, and the residue of IPA is prevented from staying between the valve and the treatment container, thereby improving the efficiency and effect of substrate processing.

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Abstract

The invention provides a fluid supply system, a substrate processing method, and a recording medium. A fluid supply system is provided with: a fluid supply unit that supplies a processing fluid; and a control unit that controls the fluid supply unit, the fluid supply unit having: a first supply flow path and a second supply flow path for supplying the processing fluid into the processing container; a first heating mechanism that is provided in the first supply flow path and heats the processing fluid to a first temperature; a second heating mechanism that is provided in the second supply flow path and heats the processing fluid to a second temperature; and a flow rate adjusting mechanism provided downstream of the first heating mechanism in the first supply flow path or downstream of the second heating mechanism in the second supply flow path for adjusting the flow rate of the processing fluid, the control unit controlling the fluid supply unit so as to adjust the flow rate of the processing fluid during the entire period in which the processing fluid is supplied to process the substrate. The processing fluid is supplied into the processing container from at least one of the first supply flow path and the second supply flow path.
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Description

Technical Field

[0001] The present disclosure relates to a fluid supply system, a substrate processing method, and a recording medium. Background Art

[0002] A technique for drying a substrate using a supercritical fluid is known. A structure for switching the temperature of the supercritical fluid supplied to the substrate is disclosed in Patent Document 1.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2021-086857 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The present disclosure provides a technique capable of suppressing backflow of a processing fluid.

[0008] Solutions to the Problems

[0009] A fluid supply system according to one aspect of the present disclosure supplies a fluid into a processing container that processes a substrate therein. The fluid supply system includes: a fluid supply unit that supplies a processing fluid; and a control unit that controls the fluid supply unit. The fluid supply unit has: a first supply flow path for supplying the processing fluid into the processing container; a second supply flow path for supplying the processing fluid into the processing container; a first heating mechanism provided in the first supply flow path for heating the processing fluid to a first temperature; a second heating mechanism provided in the second supply flow path for heating the processing fluid to a second temperature; and a flow rate adjustment mechanism provided at at least one of a position downstream of the first heating mechanism in the first supply flow path and a position downstream of the second heating mechanism in the second supply flow path. The flow rate adjustment mechanism adjusts the flow rate of the processing fluid. During the entire period of supplying the processing fluid into the processing container to process the substrate, the control unit controls the fluid supply unit to supply the processing fluid into the processing container from at least one of the first supply flow path and the second supply flow path having the flow rate adjustment mechanism.

[0010] Effects of the Invention

[0011] According to the present disclosure, backflow of the processing fluid can be suppressed. Brief Description of the Drawings

[0012] Figure 1 It is a diagram showing a substrate processing apparatus according to a first embodiment.

[0013] Figure 2 is a flowchart showing the substrate processing method according to the first embodiment.

[0014] Figure 3 is a graph showing the pressure change in the processing container in the substrate processing method according to the first embodiment.

[0015] Figure 4 is a graph showing the flow of the processing fluid in the first embodiment.

[0016] Figure 5 is a diagram showing the substrate processing apparatus according to the first modification of the first embodiment.

[0017] Figure 6 is a diagram showing the substrate processing apparatus according to the second modification of the first embodiment.

[0018] Figure 7 is a graph showing the flow of the processing fluid in the second modification of the first embodiment.

[0019] Figure 8 is a diagram showing the substrate processing apparatus according to the third modification of the first embodiment.

[0020] Figure 9 is a graph showing the flow of the processing fluid in the third modification of the first embodiment.

[0021] Figure 10 is a diagram showing the substrate processing apparatus according to the second embodiment.

[0022] Figure 11 is a graph showing the flow of the processing fluid in the second embodiment.

[0023] Figure 12 is a diagram showing the substrate processing apparatus according to the first modification of the second embodiment.

[0024] Figure 13 is a diagram showing the substrate processing apparatus according to the third embodiment.

[0025] Figure 14 is a graph showing the flow of the processing fluid in the third embodiment.

[0026] Figure 15 is a diagram showing the substrate processing apparatus according to the first modification of the third embodiment.

[0027] Figure 16 is a diagram showing the substrate processing apparatus according to the second modification of the third embodiment.

[0028] Figure 17 This is a diagram showing the flow of the processing fluid in the second modification of the third embodiment.

[0029] Figure 18 This is a diagram showing a substrate processing apparatus according to the third modification of the third embodiment.

[0030] Figure 19 This is a diagram showing the flow of the processing fluid in the third modification of the third embodiment. Detailed Embodiments

[0031] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the drawings. In all the drawings, the same or corresponding components or parts are denoted by the same or corresponding reference numerals, and repeated descriptions are omitted.

[0032] 〔First Embodiment〕

[0033] Refer to Figure 1 to describe the substrate processing apparatus 10 according to the first embodiment. Figure 1 This is a diagram showing the substrate processing apparatus 10 according to the first embodiment.

[0034] The substrate processing apparatus 10 includes a processing unit 11, a fluid supply unit 12, a discharge unit 13, and a control unit 14. The fluid supply unit 12 and the control unit 14 constitute a fluid supply system.

[0035] The processing unit 11 includes a processing container 111 and a holding unit 112. The processing container 111 is a container in which a processing space capable of accommodating a substrate W having a diameter of, for example, 300 mm is formed inside. The substrate W is, for example, a semiconductor wafer. The holding unit 112 is provided inside the processing container 111. The holding unit 112 holds the substrate W horizontally. The holding unit 112 is, for example, integrally formed with the processing container 111. The holding unit 112 may also be formed separately from the processing container 111. The processing unit 11 may also include a temperature sensor for detecting the temperature inside the processing container 111. The processing unit 11 may also include a pressure sensor for detecting the pressure inside the processing container 111.

[0036] The fluid supply unit 12 includes a fluid supply source S11, a first supply flow path L11, a second supply flow path L12, a first bypass flow path L13, and a second bypass flow path L14.

[0037] The fluid supply source S11 is a supply source of the processing fluid. The processing fluid may be, for example, liquid carbon dioxide (CO2).

[0038] The upstream of the first supply flow path L11 is connected to the fluid supply source S11, and the downstream of the first supply flow path L11 is connected to the processing container 111. In the first supply flow path L11, a heating mechanism HE11 and an on-off valve V11 are provided in sequence from the upstream. A line heater may also be provided downstream of the heating mechanism HE11 in the first supply flow path L11. On-off valves, throttle holes, filters, temperature sensors, pressure sensors, etc. may also be provided at various positions in the first supply flow path L11.

[0039] The heating mechanism HE11 heats the processing fluid supplied from the fluid supply source S11 to the first temperature and supplies the fluid at the first temperature downstream. The first temperature is, for example, 60°C. The heating mechanism HE11 is an example of the first heating mechanism.

[0040] The on-off valve V11 is a valve for switching the flow-through and disconnection of the processing fluid flow. In the open state, the on-off valve V11 allows the processing fluid to flow downstream to the processing container 111, and in the closed state, it does not allow the processing fluid to flow downstream to the processing container 111. The on-off valve V11 is an example of the first on-off valve.

[0041] The second supply flow path L12 is provided in parallel with the first supply flow path L11. The second supply flow path L12 branches off from the first supply flow path L11 at an upstream position of the heating mechanism HE11. The downstream of the second supply flow path L12 is connected to the processing container 111. The first supply flow path L11 and the second supply flow path L12 do not merge midway to supply the processing fluid to different positions in the processing container 111. In the second supply flow path L12, a heating mechanism HE12 and an on-off valve V12 are provided in sequence from the upstream. A line heater may also be provided downstream of the heating mechanism HE12 in the second supply flow path L12. On-off valves, throttle holes, filters, temperature sensors, pressure sensors, etc. may also be provided at various positions in the second supply flow path L12.

[0042] The heating mechanism HE12 heats the processing fluid supplied from the fluid supply source S11 to the second temperature and supplies the fluid at the second temperature downstream. The second temperature is a temperature higher than the first temperature. The second temperature is, for example, 120°C. The heating mechanism HE12 is an example of the second heating mechanism.

[0043] The on-off valve V12 is a valve for switching the flow-through and disconnection of the processing fluid flow. In the open state, the on-off valve V12 allows the processing fluid to flow downstream to the processing container 111, and in the closed state, it does not allow the processing fluid to flow downstream to the processing container 111. The on-off valve V12 is an example of the second on-off valve.

[0044] The first bypass flow path L13 bypasses the upstream side and the downstream side of the on-off valve V11 in the first supply flow path L11. The upstream of the first bypass flow path L13 is connected to the first supply flow path L11 between the heating mechanism HE11 and the on-off valve V11, and the downstream of the first bypass flow path L13 is connected to the first supply flow path L11 between the on-off valve V11 and the processing container 111. In the first bypass flow path L13, an on-off valve V13 and an orifice OR13 are provided in sequence from the upstream. A line heater may also be provided in the first bypass flow path L13.

[0045] The on-off valve V13 is a valve for switching the flow-through and disconnection of the processing fluid flow. In the open state, the on-off valve V13 allows the processing fluid to flow to the downstream orifice OR13, and in the closed state, it does not allow the processing fluid to flow to the downstream orifice OR13.

[0046] The orifice OR13 has a function of reducing the flow velocity of the processing fluid to adjust the pressure. The orifice OR13 allows the processing fluid with adjusted pressure to flow to the downstream processing container 111. The orifice OR13 is an example of a first throttling portion.

[0047] The first bypass flow path L13, the on-off valve V13, and the orifice OR13 constitute a flow rate adjustment mechanism for adjusting the flow rate of the processing fluid at a position downstream of the heating mechanism HE11 in the first supply flow path L11.

[0048] The second bypass flow path L14 bypasses the upstream side and the downstream side of the on-off valve V12 in the second supply flow path L12. The upstream of the second bypass flow path L14 is connected to the second supply flow path L12 between the heating mechanism HE12 and the on-off valve V12, and the downstream of the second bypass flow path L14 is connected to the second supply flow path L12 between the on-off valve V12 and the processing container 111. In the second bypass flow path L14, an on-off valve V14 and an orifice OR14 are provided in sequence from the upstream. A line heater may also be provided in the second bypass flow path L14.

[0049] The on-off valve V14 is a valve for switching the flow-through and disconnection of the processing fluid flow. In the open state, the on-off valve V14 allows the processing fluid to flow to the downstream orifice OR14, and in the closed state, it does not allow the processing fluid to flow to the downstream orifice OR14.

[0050] The orifice OR14 has a function of reducing the flow velocity of the processing fluid to adjust the pressure. The orifice OR14 allows the processing fluid with adjusted pressure to flow to the downstream processing container 111. The orifice OR14 is an example of a second throttling portion.

[0051] The second bypass flow path L14, the on-off valve V14, and the orifice OR14 constitute a flow rate adjustment mechanism that adjusts the flow rate of the processing fluid at a position downstream of the heating mechanism HE12 in the second supply flow path L12.

[0052] The discharge unit 13 has a discharge flow path L19. The discharge flow path L19 is connected to the processing container 111. In the discharge flow path L19, a pressure sensor P19, an on-off valve V19, and a back pressure valve BV19 are provided in sequence from the upstream. A line heater may also be provided in the discharge flow path L19. On-off valves, temperature sensors, and pressure sensors may also be provided at various positions in the discharge flow path L19.

[0053] The pressure sensor P19 detects the pressure of the fluid flowing in the discharge flow path L19 immediately after flowing through the processing container 111. Thereby, the pressure inside the processing container 111 can be detected.

[0054] The on-off valve V19 is a valve for switching the flow-through and disconnection of the processing fluid flow. The on-off valve V19 allows the processing fluid to flow to the downstream back pressure valve BV19 in the open state, and does not allow the processing fluid to flow to the downstream back pressure valve BV19 in the closed state.

[0055] When the primary side pressure in the discharge flow path L19 exceeds the set pressure, the back pressure valve BV19 adjusts the valve opening to allow the processing fluid to flow to the secondary side, thereby maintaining the primary side pressure at the set pressure. For example, the set pressure of the back pressure valve BV19 is adjusted by the control unit 14.

[0056] The control unit 14 is, for example, a computer, and includes an arithmetic unit 141 and a storage unit 142. Programs for controlling various processes executed in the substrate processing apparatus 10 are stored in the storage unit 142. The arithmetic unit 141 controls the operation of the substrate processing apparatus 10 by reading and executing the programs stored in the storage unit 142. The programs can be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 142 of the control unit 14. Examples of computer-readable recording media include hard disks (HD), floppy disks (FD), optical discs (CD), magneto-optical discs (MO), memory cards, etc.

[0057] The control unit 14 receives measurement signals from various sensors and sends control signals to various functional elements. The control signals include, for example, opening and closing signals of the on-off valves V11, V12, V13, V14, V19, and a set pressure signal of the back pressure valve BV19.

[0058] Refer to Figures 2 to 4 to describe the substrate processing method performed using the substrate processing apparatus 10. The substrate processing method shown below is automatically executed under the control of the control unit 14 based on the processing process and control program stored in the storage unit 142.

[0059] Figure 2 is a flowchart showing the substrate processing method according to the first embodiment. Figure 3 is a diagram showing the pressure change in the processing container 111 in the substrate processing method according to the first embodiment. In Figure 3 it, the horizontal axis represents the processing time, and the vertical axis represents the pressure in the processing container 111 detected by the pressure sensor P19. Figure 4 is a diagram showing the flow of the processing fluid in the first embodiment. Figure 4 (a) of shows the flow of the processing fluid in the pressure increasing step ST12, Figure 4 (b) of shows the flow of the processing fluid in the circulation step ST13, Figure 4 (c) of shows the flow of the processing fluid in the pressure decreasing step ST14.

[0060] As Figure 2 shown, the substrate processing method according to the first embodiment includes a preparation step ST11, a pressure increasing step ST12, a circulation step ST13, and a pressure decreasing step ST14.

[0061] In the preparation step ST11, the substrate W is carried into the processing container 111. The substrate W is subjected to a cleaning process and is placed on the holding portion 112 in a state where isopropyl alcohol (IPA) is filled in the recesses of the pattern on the surface.

[0062] After the preparation step ST11, the pressure increasing step ST12 is performed. In the pressure increasing step ST12, as Figure 4 (a) of shows, the on-off valves V11, V13, V14 are set to the open state, and the on-off valves V12, V19 are set to the closed state.

[0063] In the pressure increasing step ST12, since the on-off valves V11, V13 are in the open state, the processing fluid heated to the first temperature by the heating mechanism HE11 is supplied to the processing container 111 in a large flow rate through the on-off valves V11, V13. In the pressure increasing step ST12, since the on-off valve V12 is in the closed state and the on-off valve V14 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE12 passes through the orifice OR14, and thus the flow rate decreases and is supplied to the processing container 111 in a small flow rate. Thereby, the processing fluid having a temperature closer to the first temperature than the second temperature is supplied to the processing container 111.

[0064] In the pressure boosting step ST12, since the on-off valve V14 is in the open state, the processing fluid whose flow rate has decreased through the orifice OR14 is supplied into the processing container 111 throughout the pressure boosting step ST12. Thereby, the backflow of the processing fluid from inside the processing container 111 toward the upstream of the second supply flow path L12 is prevented. Therefore, it is possible to suppress the retention of the residue of IPA between the on-off valves V12 and V14 and the processing container 111, in other words, on the secondary side of the on-off valves V12 and V14. As a result, it is possible to suppress the residue of IPA from flowing into the processing container 111 together with the processing fluid when the on-off valve V12 is set to the open state and the processing fluid is supplied into the processing container 111 from the second supply flow path L12 in a large flow rate.

[0065] In the pressure boosting step ST12, since the on-off valve V19 is in the closed state, the processing fluid does not flow out of the processing container 111. Therefore, as Figure 3 shown, the pressure inside the processing container 111 gradually rises. In the pressure boosting step ST12, the pressure of the processing fluid supplied into the processing container 111 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing container 111 in a gas state. After that, as the filling of the processing fluid into the processing container 111 progresses, the pressure inside the processing container 111 increases, and when the pressure inside the processing container 111 exceeds the critical pressure, the processing fluid existing inside the processing container 111 becomes a supercritical state. In the pressure boosting step ST12, when the pressure inside the processing container 111 reaches the processing pressure higher than the critical pressure, the pressure boosting step ST12 is ended and the process proceeds to the circulation step ST13.

[0066] The circulation step ST13 is performed after the pressure boosting step ST12. In the circulation step ST13, as Figure 4 (b) shows, the on-off valves V12, V13, V14, and V19 are set to the open state, and the on-off valve V11 is set to the closed state.

[0067] In the circulation step ST13, since the on-off valves V12 and V14 are in the open state, the processing fluid heated to the second temperature by the heating mechanism HE12 is supplied into the processing container 111 in a large flow rate through the on-off valves V12 and V14. In the circulation step ST13, since the on-off valve V11 is in the closed state and the on-off valve V13 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE11 passes through the orifice OR13, whereby the flow rate decreases and the processing fluid is supplied into the processing container 111 in a small flow rate. Thereby, the processing fluid having a temperature closer to the second temperature than the first temperature is supplied into the processing container 111.

[0068] In the circulation process ST13, since the on-off valve V13 is in the open state, the processing fluid whose flow rate has decreased through the orifice OR13 is supplied into the processing container 111 throughout the circulation process ST13. Thereby, the backflow of the processing fluid from inside the processing container 111 toward the upstream of the first supply flow path L11 is prevented. Therefore, it is possible to suppress the retention of IPA residues between the on-off valves V11, V13 and the processing container 111, in other words, on the secondary side of the on-off valves V11, V13. As a result, it is possible to suppress the inflow of IPA residues into the processing container 111 together with the processing fluid when the on-off valve V11 is set to the open state and the processing fluid is supplied into the processing container 111 from the first supply flow path L11 at a large flow rate.

[0069] In the circulation process ST13, since the on-off valve V19 is in the open state, the processing fluid supplied into the processing container 111 is discharged from the processing container 111 via the discharge flow path L19. In the circulation process ST13, the supply of the processing fluid into the processing container 111 and the discharge of the processing fluid from the processing container 111 are performed simultaneously. Therefore, as Figure 3 shown, the pressure inside the processing container 111 is maintained substantially constant. By performing the circulation process ST13, the replacement of IPA with the processing fluid in the concave portions of the pattern on the substrate W is promoted. When the replacement of the processing fluid for IPA in the concave portions of the pattern is completed, the circulation process ST13 is ended and the pressure reduction process ST14 is started.

[0070] After the circulation process ST13, the pressure reduction process ST14 is performed. In the pressure reduction process ST14, as shown in (c) of Figure 4 , the on-off valve V19 is set to the open state, and the on-off valves V11, V12, V13, V14 are set to the closed state. Thereby, the processing fluid is discharged from the processing container 111 without supplying the processing fluid into the processing container 111. Therefore, as Figure 3 shown, the pressure inside the processing container 111 gradually decreases. When the pressure inside the processing container 111 becomes lower than the critical pressure of the processing fluid by the pressure reduction process ST14, the supercritical state processing fluid vaporizes and detaches from the concave portions of the pattern. Thereby, the drying process for one substrate W is completed.

[0071] As described above, according to the first embodiment, throughout the pressure increase process ST12, a large flow rate of the processing fluid is supplied into the processing container 111 from the first supply flow path L11, and a small flow rate of the processing fluid is supplied into the processing container 111 from the second supply flow path L12. In this case, in the pressure increase process ST12, the backflow of the processing fluid from the processing container 111 toward the upstream of the second supply flow path L12 is prevented.

[0072] According to the first embodiment, during the entire period of the circulation process ST13, a large flow rate of the processing fluid is supplied into the processing container 111 from the second supply flow path L12, and a small flow rate of the processing fluid is supplied into the processing container 111 from the first supply flow path L11. In this case, during the circulation process ST13, backflow of the processing fluid from inside the processing container 111 toward the upstream of the first supply flow path L11 is prevented.

[0073] In the first embodiment, the case where the on-off valve V13 is set to the open state during the boosting process ST12 has been described, but the on-off valve V13 may also be set to the closed state. In the first embodiment, the case where the on-off valve V14 is set to the open state during the circulation process ST13 has been described, but the on-off valve V14 may also be set to the closed state.

[0074] (First modification example)

[0075] Refer to Figure 5 to describe the substrate processing apparatus 10A according to the first modification example of the first embodiment. Figure 5 FIG. is a diagram showing the substrate processing apparatus 10A according to the first modification example of the first embodiment.

[0076] The difference in structure between the substrate processing apparatus 10A and the substrate processing apparatus 10 is that the first supply flow path L11 and the second supply flow path L12 merge before being connected to the processing container 111 to supply the processing fluid to the same position inside the processing container 111. Other structures are the same as those of the substrate processing apparatus 10. Hereinafter, the description will be centered on the structure different from that of the substrate processing apparatus 10.

[0077] The first supply flow path L11 and the second supply flow path L12 are provided in parallel. The second supply flow path L12 branches off from the first supply flow path L11 at an upstream position of the heating mechanism HE11 and merges with the first supply flow path L11 at a downstream position of the on-off valve V11. The first supply flow path L11 and the second supply flow path L12 merge immediately before being connected to the processing container 111 to supply the processing fluid to the same position inside the processing container 111.

[0078] The substrate processing method performed using the substrate processing apparatus 10A may be the same as the substrate processing method performed using the substrate processing apparatus 10.

[0079] According to the first modification of the first embodiment, during the entire boosting process ST12, a large flow rate of the processing fluid is supplied from the first supply flow path L11 into the processing container 111, and a small flow rate of the processing fluid is supplied from the second supply flow path L12 into the processing container 111. In this case, during the boosting process ST12, backflow of the processing fluid from the confluence of the first supply flow path L11 and the second supply flow path L12 toward the upstream of the second supply flow path L12 is prevented.

[0080] According to the first modification of the first embodiment, during the entire circulation process ST13, a large flow rate of the processing fluid is supplied from the second supply flow path L12 into the processing container 111, and a small flow rate of the processing fluid is supplied from the first supply flow path L11 into the processing container 111. In this case, during the circulation process ST13, backflow of the processing fluid from the confluence of the first supply flow path L11 and the second supply flow path L12 toward the upstream of the first supply flow path L11 is prevented.

[0081] (Second modification)

[0082] Refer to Figure 6 to describe the substrate processing apparatus 10B according to the second modification of the first embodiment. Figure 6 is a diagram showing the substrate processing apparatus 10B according to the second modification of the first embodiment.

[0083] The structural difference between the substrate processing apparatus 10B and the substrate processing apparatus 10 is that the first bypass flow path L13, the on-off valve V13, and the throttle orifice OR13 are not provided. Other structures are the same as those of the substrate processing apparatus 10.

[0084] Refer to Figure 7 to describe the substrate processing method performed using the substrate processing apparatus 10B. The following substrate processing method is automatically executed under the control of the control unit 14 based on the processing process and the control program stored in the storage unit 142. Figure 7 is a diagram showing the flow of the processing fluid in the second modification of the first embodiment. Figure 7 (a) shows the flow of the processing fluid during the boosting process ST12, Figure 7 (b) shows the flow of the processing fluid during the circulation process ST13, Figure 7 (c) shows the flow of the processing fluid during the pressure reduction process ST14.

[0085] The substrate processing method according to the second modification of the first embodiment includes a preparation process ST11, a boosting process ST12, a circulation process ST13, and a pressure reduction process ST14.

[0086] The preparation process ST11 is the same as the substrate processing method according to the first embodiment.

[0087] After the preparation step ST11, a pressure boosting step ST12 is performed. In the pressure boosting step ST12, as shown in (a) of Figure 7 , the on-off valves V11 and V14 are set to the open state, and the on-off valves V12 and V19 are set to the closed state.

[0088] In the pressure boosting step ST12, since the on-off valve V11 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE11 is supplied to the processing container 111 in a large flow rate through the on-off valve V11. In the pressure boosting step ST12, since the on-off valve V12 is in the closed state and the on-off valve V14 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE12 passes through the orifice OR14, whereby the flow velocity decreases and is supplied to the processing container 111 in a small flow rate. Thus, a processing fluid having a temperature closer to the first temperature than the second temperature is supplied to the processing container 111.

[0089] In the pressure boosting step ST12, since the on-off valve V14 is in the open state, the processing fluid whose flow velocity has decreased through the orifice OR14 is supplied to the processing container 111 throughout the entire period of the pressure boosting step ST12. Thus, the backflow of the processing fluid from the processing container 111 toward the upstream of the second supply flow path L12 is prevented. Therefore, the retention of the residue of IPA between the on-off valves V12 and V14 and the processing container 111, in other words, on the secondary side of the on-off valves V12 and V14, can be suppressed. As a result, when the on-off valve V12 is set to the open state and the processing fluid is supplied to the processing container 111 in a large flow rate from the second supply flow path L12, the residue of IPA can be suppressed from flowing into the processing container 111 together with the processing fluid.

[0090] In the pressure boosting step ST12, since the on-off valve V19 is in the closed state, the processing fluid does not flow out of the processing container 111. Therefore, as shown in Figure 3 , the pressure in the processing container 111 gradually rises. In the pressure boosting step ST12, the pressure of the processing fluid supplied to the processing container 111 is lower than the critical pressure. Therefore, the processing fluid is supplied to the processing container 111 in a gas state. After that, as the filling of the processing fluid into the processing container 111 progresses, the pressure in the processing container 111 increases, and when the pressure in the processing container 111 exceeds the critical pressure, the processing fluid present in the processing container 111 becomes a supercritical state. In the pressure boosting step ST12, when the pressure in the processing container 111 reaches the processing pressure higher than the critical pressure, the pressure boosting step ST12 is ended and the process proceeds to the circulation step ST13.

[0091] After the pressure boosting step ST12, a circulation step ST13 is performed. In the circulation step ST13, as shown in Figure 7As shown in (b) thereof, the on-off valves V12, V14, and V19 are set to the open state, and the on-off valve V11 is set to the closed state.

[0092] In the circulation process ST13, since the on-off valves V12 and V14 are in the open state, the processing fluid heated to the second temperature by the heating mechanism HE12 is supplied to the inside of the processing container 111 in a large flow rate through the on-off valves V12 and V14. In the circulation process ST13, since the on-off valve V11 is in the closed state, the processing fluid heated to the first temperature by the heating mechanism HE11 is not supplied to the inside of the processing container 111. Thus, the processing fluid at the second temperature is supplied to the inside of the processing container 111.

[0093] In the circulation process ST13, since the on-off valve V19 is in the open state, the processing fluid supplied to the inside of the processing container 111 is discharged from the inside of the processing container 111 via the discharge flow path L19. In the circulation process ST13, the supply of the processing fluid to the inside of the processing container 111 and the discharge of the processing fluid from the inside of the processing container 111 are performed simultaneously. Therefore, as Figure 3 shown, the pressure inside the processing container 111 is maintained substantially constant. By performing the circulation process ST13, the replacement of IPA with the processing fluid in the concave portions of the pattern on the substrate W is promoted. When the replacement of the processing fluid for IPA in the concave portions of the pattern is completed, the circulation process ST13 is ended, and the process proceeds to the pressure reduction process ST14.

[0094] The pressure reduction process ST14 is performed after the circulation process ST13. In the pressure reduction process ST14, as Figure 7 shown in (c) thereof, the on-off valve V19 is set to the open state, and the on-off valves V11, V12, and V14 are set to the closed state. The pressure reduction process ST14 is the same as the substrate processing method according to the first embodiment.

[0095] As described above, according to the second modification of the first embodiment, during the entire period of the pressure increase process ST12, a large flow rate of the processing fluid is supplied to the inside of the processing container 111 from the first supply flow path L11, and a small flow rate of the processing fluid is supplied to the inside of the processing container 111 from the second supply flow path L12. In this case, the backflow of the processing fluid from the inside of the processing container 111 to the upstream of the second supply flow path L12 is prevented in the pressure increase process ST12.

[0096] In the second modification of the first embodiment, the case where the on-off valve V14 is set to the open state in the circulation process ST13 has been described, but the on-off valve V14 may be set to the closed state.

[0097] In the second modification of the first embodiment, a structure in which the first supply flow path L11 and the second supply flow path L12 do not merge midway but supply the processing fluid to different positions in the processing container 111 was described, but it is not limited thereto. For example, it may be configured in the same manner as the substrate processing apparatus 10A according to the first modification of the first embodiment, in which the first supply flow path L11 and the second supply flow path L12 merge before being connected to the processing container 111 to supply the processing fluid to the same position in the processing container 111.

[0098] (Third Modification)

[0099] Refer to Figure 8 to describe the substrate processing apparatus 10C according to the third modification of the first embodiment. Figure 8 FIG. is a diagram showing the substrate processing apparatus 10C according to the third modification of the first embodiment.

[0100] The substrate processing apparatus 10C is different from the substrate processing apparatus 10 in structure in that the second bypass flow path L14, the on-off valve V14, and the orifice OR14 are not provided. Other structures are the same as those of the substrate processing apparatus 10.

[0101] Refer to Figure 9 to describe the substrate processing method performed using the substrate processing apparatus 10C. The substrate processing method shown below is automatically executed under the control of the control unit 14 based on the processing process and control program stored in the storage unit 142. Figure 9 FIG. is a diagram showing the flow of the processing fluid in the third modification of the first embodiment. Figure 9 (a) shows the flow of the processing fluid in the boosting step ST12, Figure 9 (b) shows the flow of the processing fluid in the circulation step ST13, Figure 9 (c) shows the flow of the processing fluid in the pressure reduction step ST14.

[0102] The substrate processing method according to the third modification of the first embodiment includes a preparation step ST11, a boosting step ST12, a circulation step ST13, and a pressure reduction step ST14.

[0103] The preparation step ST11 is the same as the substrate processing method according to the first embodiment.

[0104] After the preparation step ST11, the boosting step ST12 is performed. In the boosting step ST12, as Figure 9 (a) shows, the on-off valves V11 and V13 are set to the open state, and the on-off valves V12 and V19 are set to the closed state.

[0105] In the pressure boosting step ST12, since the on-off valves V11 and V13 are in the open state, the processing fluid heated to the first temperature by the heating mechanism HE11 is supplied to the processing container 111 in a large flow rate through the on-off valves V11 and V13. In the pressure boosting step ST12, since the on-off valve V12 is in the closed state, the processing fluid heated to the second temperature by the heating mechanism HE12 is not supplied to the processing container 111. Thus, the processing fluid at the first temperature is supplied to the processing container 111.

[0106] In the pressure boosting step ST12, since the on-off valve V19 is in the closed state, the processing fluid does not flow out of the processing container 111. Therefore, as Figure 3 shown, the pressure inside the processing container 111 gradually rises. In the pressure boosting step ST12, the pressure of the processing fluid supplied to the processing container 111 is lower than the critical pressure. Therefore, the processing fluid is supplied to the processing container 111 in a gas state. After that, as the filling of the processing fluid into the processing container 111 progresses, the pressure inside the processing container 111 increases. When the pressure inside the processing container 111 exceeds the critical pressure, the processing fluid existing in the processing container 111 becomes a supercritical state. In the pressure boosting step ST12, when the pressure inside the processing container 111 reaches the processing pressure higher than the critical pressure, the pressure boosting step ST12 ends and the process proceeds to the circulation step ST13.

[0107] After the pressure boosting step ST12, the circulation step ST13 is performed. In the circulation step ST13, as Figure 9 shown in (b), the on-off valves V12, V13, and V19 are set to the open state, and the on-off valve V11 is set to the closed state.

[0108] In the circulation step ST13, since the on-off valve V12 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE12 is supplied to the processing container 111 in a large flow rate through the on-off valve V12. In the circulation step ST13, since the on-off valve V11 is in the closed state and the on-off valve V13 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE11 passes through the orifice OR13, and thus the flow velocity decreases and the processing fluid is supplied to the processing container 111 in a small flow rate. Thus, the processing fluid at a temperature closer to the second temperature than the first temperature is supplied to the processing container 111.

[0109] In the circulation process ST13, since the on-off valve V13 is in the open state, the processing fluid whose flow rate has decreased through the orifice OR13 is supplied into the processing container 111 throughout the circulation process ST13. Thereby, the backflow of the processing fluid from inside the processing container 111 toward the upstream of the first supply flow path L11 is prevented. Therefore, the retention of the residue of IPA between the on-off valves V11, V13 and the processing container 111, in other words, on the secondary side of the on-off valves V11, V13, can be suppressed. As a result, when the on-off valve V11 is set to the open state and the processing fluid is supplied into the processing container 111 from the first supply flow path L11 at a large flow rate, the residue of IPA can be suppressed from flowing into the processing container 111 together with the processing fluid.

[0110] In the circulation process ST13, since the on-off valve V19 is in the open state, the processing fluid supplied into the processing container 111 is discharged from the processing container 111 via the discharge flow path L19. In the circulation process ST13, the supply of the processing fluid into the processing container 111 and the discharge of the processing fluid from the processing container 111 are performed simultaneously. Therefore, as Figure 3 shown, the pressure inside the processing container 111 is maintained substantially constant. By performing the circulation process ST13, the replacement of IPA with the processing fluid in the concave portions of the pattern of the substrate W is promoted. When the replacement of the processing fluid for IPA in the concave portions of the pattern is completed, the circulation process ST13 is ended and the pressure reduction process ST14 is started.

[0111] After the circulation process ST13, the pressure reduction process ST14 is performed. In the pressure reduction process ST14, as shown in (c) of Figure 9 , the on-off valve V19 is set to the open state, and the on-off valves V11, V12, V13 are set to the closed state. The pressure reduction process ST14 is the same as the substrate processing method according to the first embodiment.

[0112] As described above, according to the third modification of the first embodiment, throughout the circulation process ST13, a large flow rate of the processing fluid is supplied into the processing container 111 from the second supply flow path L12, and a small flow rate of the processing fluid is supplied into the processing container 111 from the first supply flow path L11. In this case, the backflow of the processing fluid from inside the processing container 111 toward the upstream of the first supply flow path L11 is prevented in the circulation process ST13.

[0113] In the circulation process ST13, the pressure inside the processing container 111 rises and the processing fluid becomes in a supercritical state. Therefore, compared with the pressure increasing process ST12, the processing fluid is more likely to diffuse and the backflow of the processing fluid is more likely to occur. Therefore, from the viewpoint of preventing the backflow of the processing fluid, it is particularly effective to supply a large flow rate of the processing fluid into the processing container 111 from the second supply flow path L12 and supply a small flow rate of the processing fluid into the processing container 111 from the first supply flow path L11 throughout the circulation process ST13.

[0114] In the third modification of the first embodiment, the case where the on-off valve V13 is set to the open state in the pressure increasing process ST12 has been described, but the on-off valve V13 may be set to the closed state.

[0115] In the third modification of the first embodiment, the case where the first supply flow path L11 and the second supply flow path L12 do not merge midway but supply the processing fluid to different positions inside the processing container 111 has been described, but it is not limited thereto. For example, it may be configured in the same manner as the substrate processing apparatus 10A according to the first modification of the first embodiment: the first supply flow path L11 and the second supply flow path L12 merge before being connected to the processing container 111 to supply the processing fluid to the same position inside the processing container 111.

[0116] 〔Second Embodiment〕

[0117] Refer to Figure 10 to describe the substrate processing apparatus 20 according to the second embodiment. Figure 10 is a diagram showing the substrate processing apparatus 20 according to the second embodiment.

[0118] The substrate processing apparatus 20 includes a processing unit 21, a fluid supply unit 22, a discharge unit 23, and a control unit 24. The fluid supply unit 22 and the control unit 24 constitute a fluid supply system.

[0119] The processing unit 21 may be the same as the processing unit 11. The processing unit 21 includes a processing container 211 and a holding unit 212.

[0120] The fluid supply unit 22 includes a fluid supply source S21, a first supply flow path L21, a second supply flow path L22, a first connection flow path L23, and a second connection flow path L24.

[0121] The fluid supply source S21 may be the same as the fluid supply source S11.

[0122] The first supply flow path L21 may be the same as the first supply flow path L11. In the first supply flow path L21, a heating mechanism HE21 and an on-off valve V21 are provided in sequence from the upstream. A line heater may also be provided downstream of the heating mechanism HE21 in the first supply flow path L21. On-off valves, throttle orifices, filters, temperature sensors, pressure sensors, etc. may also be provided at various positions in the first supply flow path L21. The heating mechanism HE21 may be the same as the heating mechanism HE11. The on-off valve V21 may be the same as the on-off valve V11.

[0123] The second supply flow path L22 may be the same as the second supply flow path L12. In the second supply flow path L22, a heating mechanism HE22 and an on-off valve V22 are provided in sequence from the upstream. A line heater may also be provided downstream of the heating mechanism HE22 in the second supply flow path L22. On-off valves, throttle orifices, filters, temperature sensors, pressure sensors, etc. may also be provided at various positions in the second supply flow path L22. The heating mechanism HE22 may be the same as the heating mechanism HE12. The on-off valve V22 may be the same as the on-off valve V12.

[0124] Throttle orifices may also be provided near the processing container 211 in the first supply flow path L21 and near the processing container 211 in the second supply flow path L22. In this case, it is possible to suppress the circulation of the processing fluid through the first supply flow path L21, the second supply flow path L22, the first connection flow path L23, the second connection flow path L24, and the processing container 211 on the downstream side of the on-off valves V21, V22, and V23.

[0125] The first connection flow path L23 connects the upstream side of the on-off valve V21 in the first supply flow path L21 to the downstream side of the on-off valve V22 in the second supply flow path L22. The upstream of the first connection flow path L23 is connected to the first supply flow path L21 between the heating mechanism HE21 and the on-off valve V21, and the downstream is connected to the second supply flow path L22 between the on-off valve V22 and the processing container 211. In the first connection flow path L23, a throttle orifice OR23 and an on-off valve V23 are provided in sequence from the upstream. A line heater may also be provided in the first connection flow path L23.

[0126] The throttle orifice OR23 has a function of reducing the flow velocity of the processing fluid to adjust the pressure. The throttle orifice OR23 allows the processing fluid with the adjusted pressure to flow to the downstream processing container 211. The throttle orifice OR23 is an example of the third throttle portion.

[0127] The on-off valve V23 is a valve for switching the flow-through and disconnection of the processing fluid flow. The on-off valve V23 allows the processing fluid to flow to the downstream processing container 211 in the open state and does not allow the processing fluid to flow to the downstream processing container 211 in the closed state.

[0128] The first connection flow path L23, the throttle orifice OR23, and the on-off valve V23 constitute a flow rate adjustment mechanism that adjusts the flow rate of the processing fluid at a position downstream of the heating mechanism HE21 in the first supply flow path L21.

[0129] The second connection flow path L24 connects the upstream side of the on-off valve V22 in the second supply flow path L22 to the downstream side of the on-off valve V21 in the first supply flow path L21. The upstream of the second connection flow path L24 is connected to the second supply flow path L22 between the heating mechanism HE22 and the on-off valve V22, and the downstream of the second connection flow path L24 is connected to the first supply flow path L21 between the on-off valve V21 and the processing container 211. The second connection flow path L24 merges with the first connection flow path L23 midway and then branches again. In the second connection flow path L24, a throttle orifice OR24 and an on-off valve V23 are provided in sequence from the upstream. The throttle orifice OR24 is provided at a position on the upstream side of the confluence portion where it merges with the first connection flow path L23 in the second connection flow path L24. The on-off valve V23 is provided at the confluence portion of the first connection flow path L23 and the second connection flow path L24. Therefore, compared with the substrate processing apparatus 10 according to the first embodiment, the number of on-off valves can be reduced by one. A line heater may also be provided in the second connection flow path L24.

[0130] The throttle orifice OR24 has a function of reducing the flow velocity of the processing fluid to adjust the pressure. The throttle orifice OR24 allows the processing fluid after the pressure is adjusted to flow to the downstream processing container 211. The throttle orifice OR24 is an example of the fourth throttle portion.

[0131] The second connection flow path L24, the throttle orifice OR24, and the on-off valve V23 constitute a flow rate adjustment mechanism that adjusts the flow rate of the processing fluid at a position downstream of the heating mechanism HE22 in the second supply flow path L22.

[0132] The discharge portion 23 may be the same as the discharge portion 13. The discharge portion 23 has a discharge flow path L29. The discharge flow path L29 is connected to the processing container 211. In the discharge flow path L29, a pressure sensor P29, an on-off valve V29, and a back pressure valve BV29 are provided in sequence from the upstream. The pressure sensor P29, the on-off valve V29, and the back pressure valve BV29 may be the same as the pressure sensor P19, the on-off valve V19, and the back pressure valve BV19, respectively.

[0133] The control portion 24 may be the same as the control portion 14. The control portion 24 receives measurement signals from various sensors and sends control signals to various functional elements. The control signals include, for example, the opening and closing signals of the on-off valves V21, V22, V23, V29, and the set pressure signal of the back pressure valve BV29.

[0134] Refer to Figure 11To describe a substrate processing method performed using the substrate processing apparatus 20. The substrate processing method shown below is automatically executed under the control of the control unit 24 based on the processing process and control program stored in the storage unit 242.

[0135] Figure 11 It is a diagram showing the flow of the processing fluid in the second embodiment. Figure 11 (a) of which shows the flow of the processing fluid in the boosting step ST12, Figure 11 (b) of which shows the flow of the processing fluid in the circulation step ST13, Figure 11 and (c) of which shows the flow of the processing fluid in the pressure reduction step ST14.

[0136] The substrate processing method according to the second embodiment includes a preparation step ST11, a boosting step ST12, a circulation step ST13, and a pressure reduction step ST14.

[0137] The preparation step ST11 is the same as the substrate processing method according to the first embodiment.

[0138] After the preparation step ST11, the boosting step ST12 is performed. In the boosting step ST12, as Figure 11 shown in (a), the on-off valves V21 and V23 are set to the open state, and the on-off valves V22 and V29 are set to the closed state.

[0139] In the boosting step ST12, since the on-off valves V21 and V23 are in the open state, the processing fluid heated to the first temperature by the heating mechanism HE21 is supplied to the inside of the processing container 211 in a large flow rate through the on-off valves V21 and V23. In the boosting step ST12, since the on-off valve V22 is in the closed state and the on-off valve V23 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE22 passes through the orifice OR24, whereby the flow rate decreases and is supplied to the inside of the processing container 211 in a small flow rate. Thus, the processing fluid having a temperature closer to the first temperature than the second temperature is supplied to the inside of the processing container 211.

[0140] In the pressure boosting step ST12, since the on-off valve V23 is in the open state, the processing fluid whose flow rate has decreased through the orifice OR24 is supplied into the processing container 211 throughout the pressure boosting step ST12. Thereby, the backflow of the processing fluid from inside the processing container 211 toward the upstream of the second supply flow path L22 is prevented. Therefore, it is possible to suppress the retention of the residue of IPA between the on-off valves V22, V23 and the processing container 211, in other words, on the secondary side of the on-off valves V22, V23. As a result, it is possible to suppress the residue of IPA from flowing into the processing container 211 together with the processing fluid when the on-off valve V22 is set to the open state and the processing fluid is supplied into the processing container 211 from the second supply flow path L22 at a large flow rate.

[0141] In the pressure boosting step ST12, since the on-off valve V29 is in the closed state, the processing fluid does not flow out of the processing container 211. Therefore, as Figure 3 shown, the pressure inside the processing container 211 gradually rises. In the pressure boosting step ST12, the pressure of the processing fluid supplied into the processing container 211 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing container 211 in a gas state. After that, as the filling of the processing fluid into the processing container 211 progresses, the pressure inside the processing container 211 increases, and when the pressure inside the processing container 211 exceeds the critical pressure, the processing fluid existing inside the processing container 211 becomes a supercritical state. In the pressure boosting step ST12, when the pressure inside the processing container 211 reaches the processing pressure higher than the critical pressure, the pressure boosting step ST12 is ended and the process proceeds to the circulation step ST13.

[0142] After the pressure boosting step ST12, the circulation step ST13 is performed. In the circulation step ST13, as Figure 11 (b) of the figure shows, the on-off valves V22, V23, V29 are set to the open state, and the on-off valve V21 is set to the closed state.

[0143] In the circulation step ST13, since the on-off valves V22, V23 are in the open state, the processing fluid heated to the second temperature by the heating mechanism HE22 is supplied into the processing container 211 at a large flow rate through the on-off valves V22, V23. In the circulation step ST13, since the on-off valve V21 is in the closed state and the on-off valve V23 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE21 passes through the orifice OR23, whereby the flow rate decreases and the processing fluid is supplied into the processing container 211 at a small flow rate. Thereby, the processing fluid having a temperature closer to the second temperature than the first temperature is supplied into the processing container 211.

[0144] In the circulation process ST13, since the on-off valve V23 is in the open state, the processing fluid whose flow rate has decreased through the orifice OR23 is supplied into the processing container 211 throughout the circulation process ST13. Thereby, backflow of the processing fluid from inside the processing container 211 toward the upstream of the first supply flow path L21 is prevented. Therefore, it is possible to suppress the retention of IPA residues between the on-off valves V21, V23 and the processing container 211, in other words, on the secondary side of the on-off valves V21, V23. As a result, it is possible to suppress the inflow of IPA residues into the processing container 211 together with the processing fluid when the on-off valve V21 is set to the open state and the processing fluid is supplied into the processing container 211 from the first supply flow path L21 at a large flow rate.

[0145] In the circulation process ST13, since the on-off valve V29 is in the open state, the processing fluid supplied into the processing container 211 is discharged from the processing container 211 via the discharge flow path L29. In the circulation process ST13, the supply of the processing fluid into the processing container 211 and the discharge of the processing fluid from the processing container 211 are performed simultaneously. Therefore, as Figure 3 shown, the pressure inside the processing container 211 is maintained substantially constant. By performing the circulation process ST13, the replacement of IPA with the processing fluid in the concave portions of the pattern on the substrate W is promoted. When the replacement of the processing fluid for IPA in the concave portions of the pattern is completed, the circulation process ST13 is ended and the pressure reduction process ST14 is started.

[0146] After the circulation process ST13, the pressure reduction process ST14 is performed. In the pressure reduction process ST14, as Figure 11 shown in (c), the on-off valve V29 is set to the open state, and the on-off valves V21, V22, V23 are set to the closed state. The pressure reduction process ST14 is the same as the substrate processing method according to the first embodiment.

[0147] As described above, according to the second embodiment, throughout the pressure increase process ST12, a large flow rate of the processing fluid is supplied into the processing container 211 from the first supply flow path L21, and a small flow rate of the processing fluid is supplied into the processing container 211 from the second supply flow path L22. In this case, backflow of the processing fluid from inside the processing container 211 toward the upstream of the second supply flow path L22 is prevented in the pressure increase process ST12.

[0148] According to the second embodiment, throughout the circulation process ST13, a large flow rate of the processing fluid is supplied into the processing container 211 from the second supply flow path L22, and a small flow rate of the processing fluid is supplied into the processing container 211 from the first supply flow path L21. In this case, backflow of the processing fluid from inside the processing container 211 toward the upstream of the first supply flow path L21 is prevented in the circulation process ST13.

[0149] (First modified example)

[0150] Refer to Figure 12 to describe the substrate processing apparatus 20A according to the first modified example of the second embodiment. Figure 12 FIG. is a view showing the substrate processing apparatus 20A according to the first modified example of the second embodiment.

[0151] The difference in structure between the substrate processing apparatus 20A and the substrate processing apparatus 20 is that the first supply flow path L21 and the second supply flow path L22 merge before being connected to the processing container 211 to supply the processing fluid to the same position inside the processing container 211. Other structures are the same as those of the substrate processing apparatus 20. Hereinafter, the description will focus on the structure different from that of the substrate processing apparatus 20.

[0152] The first supply flow path L21 and the second supply flow path L22 are arranged in parallel. The second supply flow path L22 branches off from the first supply flow path L21 at an upstream position of the heating mechanism HE21 and merges with the first supply flow path L21 at a downstream position of the on-off valve V21. The first supply flow path L21 and the second supply flow path L22 merge immediately before being connected to the processing container 211 to supply the processing fluid to the same position inside the processing container 211.

[0153] The substrate processing method performed using the substrate processing apparatus 20A can be the same as the substrate processing method performed using the substrate processing apparatus 20.

[0154] According to the first modified example of the second embodiment, during the entire period of the pressure boosting step ST12, a large flow rate of the processing fluid is supplied from the first supply flow path L21 into the processing container 211, and a small flow rate of the processing fluid is supplied from the second supply flow path L22 into the processing container 211. In this case, during the pressure boosting step ST12, the backflow of the processing fluid from the confluence portion of the first supply flow path L21 and the second supply flow path L22 toward the upstream of the second supply flow path L22 is prevented.

[0155] According to the first modified example of the second embodiment, during the entire period of the circulation step ST13, a large flow rate of the processing fluid is supplied from the second supply flow path L22 into the processing container 211, and a small flow rate of the processing fluid is supplied from the first supply flow path L21 into the processing container 211. In this case, during the circulation step ST13, the backflow of the processing fluid from the confluence portion of the first supply flow path L21 and the second supply flow path L22 toward the upstream of the first supply flow path L21 is prevented.

[0156] 〔Third embodiment〕

[0157] Refer to Figure 13 to describe the substrate processing apparatus 30 according to the third embodiment.Figure 13 FIG. Figure 13 is a view showing a substrate processing apparatus 30 according to the third embodiment.

[0158] The substrate processing apparatus 30 is different in structure from the substrate processing apparatus 20 in that the first connection flow path L33 does not merge with the second connection flow path L34. Hereinafter, the description will focus on the structure different from that of the substrate processing apparatus 20.

[0159] The substrate processing apparatus 30 includes a processing unit 31, a fluid supply unit 32, a discharge unit 33, and a control unit 34. The fluid supply unit 32 and the control unit 34 constitute a fluid supply system.

[0160] The processing unit 31 may be the same as the processing unit 11. The processing unit 31 includes a processing container 311 and a holding unit 312.

[0161] The fluid supply unit 32 includes a fluid supply source S31, a first supply flow path L31, a second supply flow path L32, a first connection flow path L33, and a second connection flow path L34.

[0162] The fluid supply source S31 may be the same as the fluid supply source S11.

[0163] The first supply flow path L31 may be the same as the first supply flow path L11. In the first supply flow path L31, a heating mechanism HE31 and an on-off valve V31 are provided in order from the upstream. A line heater may also be provided downstream of the heating mechanism HE31 in the first supply flow path L31. On-off valves, throttle holes, filters, temperature sensors, pressure sensors, etc. may also be provided at various positions in the first supply flow path L31. The heating mechanism HE31 may be the same as the heating mechanism HE11. The on-off valve V31 may be the same as the on-off valve V11.

[0164] The second supply flow path L32 may be the same as the second supply flow path L12. In the second supply flow path L32, a heating mechanism HE32 and an on-off valve V32 are provided in order from the upstream. A line heater may also be provided downstream of the heating mechanism HE32 in the second supply flow path L32. On-off valves, throttle holes, filters, temperature sensors, pressure sensors, etc. may also be provided at various positions in the second supply flow path L32. The heating mechanism HE32 may be the same as the heating mechanism HE12. The on-off valve V32 may be the same as the on-off valve V12.

[0165] The first connection flow path L33 connects the upstream side of the on-off valve V31 in the first supply flow path L31 to the downstream side of the on-off valve V32 in the second supply flow path L32. The upstream of the first connection flow path L33 is connected to the first supply flow path L31 between the heating mechanism HE31 and the on-off valve V31, and the downstream of the first connection flow path L33 is connected to the second supply flow path L32 between the on-off valve V32 and the processing container 311. In the first connection flow path L33, an on-off valve V33 and a throttle orifice OR33 are provided in sequence from the upstream. A line heater may also be provided in the first connection flow path L33.

[0166] The on-off valve V33 is a valve for switching the flow-through and disconnection of the processing fluid flow. In the open state, the on-off valve V33 allows the processing fluid to flow to the downstream throttle orifice OR33, and in the closed state, it does not allow the processing fluid to flow to the downstream throttle orifice OR33.

[0167] The throttle orifice OR33 has a function of reducing the flow velocity of the processing fluid to adjust the pressure. The throttle orifice OR33 allows the processing fluid with adjusted pressure to flow to the downstream processing container 311. The throttle orifice OR33 is an example of the third throttle portion.

[0168] The first connection flow path L33, the on-off valve V33, and the throttle orifice OR33 constitute a flow rate adjustment mechanism for adjusting the flow rate of the processing fluid at a position downstream of the heating mechanism HE31 in the first supply flow path L31.

[0169] The second connection flow path L34 connects the upstream side of the on-off valve V32 in the second supply flow path L32 to the downstream side of the on-off valve V31 in the first supply flow path L31. The upstream of the second connection flow path L34 is connected to the second supply flow path L32 between the heating mechanism HE32 and the on-off valve V32, and the downstream of the second connection flow path L34 is connected to the first supply flow path L31 between the on-off valve V31 and the processing container 311. The second connection flow path L34 does not merge with the first connection flow path L33. In the second connection flow path L34, an on-off valve V34 and a throttle orifice OR34 are provided in sequence from the upstream. A line heater may also be provided in the second connection flow path L34.

[0170] The on-off valve V34 is a valve for switching the flow-through and disconnection of the processing fluid flow. In the open state, the on-off valve V34 allows the processing fluid to flow to the downstream throttle orifice OR34, and in the closed state, it does not allow the processing fluid to flow to the downstream throttle orifice OR34.

[0171] The throttle orifice OR34 has a function of reducing the flow velocity of the processing fluid to adjust the pressure. The throttle orifice OR34 allows the processing fluid with adjusted pressure to flow to the downstream processing container 311. The throttle orifice OR34 is an example of the fourth throttle portion.

[0172] The second connection flow path L34, the on-off valve V34, and the orifice OR34 constitute a flow rate adjustment mechanism that adjusts the flow rate of the processing fluid at a position downstream of the heating mechanism HE32 in the second supply flow path L32.

[0173] The discharge section 33 can be the same as the discharge section 13. The discharge section 33 has a discharge flow path L39. The discharge flow path L39 is connected to the processing container 311. In the discharge flow path L39, a pressure sensor P39, an on-off valve V39, and a back pressure valve BV39 are provided in sequence from the upstream. A line heater may also be provided in the discharge flow path L39. The pressure sensor P39, the on-off valve V39, and the back pressure valve BV39 can be the same as the pressure sensor P19, the on-off valve V19, and the back pressure valve BV19, respectively.

[0174] The control section 34 can be the same as the control section 14. The control section 34 receives measurement signals from various sensors and sends control signals to various functional elements. The control signals include, for example, the opening / closing signals of the on-off valves V31, V32, V33, V34, V39, and the set pressure signal of the back pressure valve BV39.

[0175] Refer to Figure 14 to describe the substrate processing method performed using the substrate processing apparatus 30. The substrate processing method shown below is automatically executed under the control of the control section 34 based on the processing process and control program stored in the storage section 342.

[0176] Figure 14 is a diagram showing the flow of the processing fluid in the third embodiment. Figure 14 (a) thereof shows the flow of the processing fluid in the boosting step ST12, Figure 14 (b) thereof shows the flow of the processing fluid in the circulation step ST13, Figure 14 (c) thereof shows the flow of the processing fluid in the pressure reduction step ST14.

[0177] The substrate processing method according to the third embodiment includes a preparation step ST11, a boosting step ST12, a circulation step ST13, and a pressure reduction step ST14.

[0178] The preparation step ST11 is the same as the substrate processing method according to the first embodiment.

[0179] After the preparation step ST11, the boosting step ST12 is performed. In the boosting step ST12, as Figure 14 shown in (a) thereof, the on-off valves V31, V34 are set to the open state, and the on-off valves V32, V33, V39 are set to the closed state.

[0180] In the boosting step ST12, since the on-off valve V31 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE31 is supplied into the processing container 311 in a large flow rate through the on-off valve V31. In the boosting step ST12, since the on-off valve V32 is in the closed state and the on-off valve V34 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE32 passes through the orifice OR34, and thus the flow velocity decreases and is supplied into the processing container 311 in a small flow rate. Thereby, the processing fluid having a temperature closer to the first temperature than the second temperature is supplied into the processing container 311.

[0181] In the boosting step ST12, since the on-off valve V34 is in the open state, the processing fluid with a decreased flow velocity passing through the orifice OR34 is supplied into the processing container 311 throughout the boosting step ST12. Thereby, the backflow of the processing fluid from the inside of the processing container 311 toward the upstream of the second supply flow path L32 is prevented. Therefore, the retention of the residue of IPA between the on-off valve V34 and the processing container 311, in other words, on the secondary side of the on-off valve V34, can be suppressed.

[0182] In the boosting step ST12, since the on-off valve V39 is in the closed state, the processing fluid does not flow out of the processing container 311. Therefore, as Figure 3 shown, the pressure inside the processing container 311 gradually rises. In the boosting step ST12, the pressure of the processing fluid supplied into the processing container 311 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing container 311 in a gas state. After that, as the filling of the processing fluid into the processing container 311 progresses, the pressure inside the processing container 311 increases, and when the pressure inside the processing container 311 exceeds the critical pressure, the processing fluid existing inside the processing container 311 becomes a supercritical state. In the boosting step ST12, when the pressure inside the processing container 311 reaches the processing pressure higher than the critical pressure, the boosting step ST12 ends and the process proceeds to the circulation step ST13.

[0183] The circulation step ST13 is performed after the boosting step ST12. In the circulation step ST13, as shown in (b) of Figure 14 , the on-off valves V32, V33, and V39 are set to the open state, and the on-off valves V31 and V34 are set to the closed state.

[0184] In the circulation process ST13, since the on-off valve V32 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE32 is supplied to the inside of the processing container 311 in a large flow rate through the on-off valve V32. In the circulation process ST13, since the on-off valve V31 is in the closed state and the on-off valve V33 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE31 passes through the orifice OR33, whereby the flow velocity decreases and is supplied to the inside of the processing container 311 in a small flow rate. Thereby, a processing fluid having a temperature closer to the second temperature than the first temperature is supplied to the inside of the processing container 311.

[0185] In the circulation process ST13, since the on-off valve V33 is in the open state, the processing fluid whose flow velocity has decreased through the orifice OR33 is supplied to the inside of the processing container 311 throughout the circulation process ST13. Thereby, the backflow of the processing fluid from the inside of the processing container 311 toward the upstream of the first supply flow path L31 is prevented. Therefore, the retention of the residue of IPA between the on-off valve V33 and the processing container 311, in other words, on the secondary side of the on-off valve V33, can be suppressed.

[0186] In the circulation process ST13, since the on-off valve V39 is in the open state, the processing fluid supplied to the inside of the processing container 311 is discharged from the inside of the processing container 311 via the discharge flow path L39. In the circulation process ST13, the supply of the processing fluid to the inside of the processing container 311 and the discharge of the processing fluid from the inside of the processing container 311 are performed simultaneously. Therefore, as Figure 3 shown, the pressure inside the processing container 311 is maintained substantially constant. By performing the circulation process ST13, the replacement of IPA with the processing fluid in the concave portions of the pattern on the substrate W is promoted. When the replacement of the processing fluid for IPA in the concave portions of the pattern is completed, the circulation process ST13 is ended and the pressure reduction process ST14 is started.

[0187] After the circulation process ST13, the pressure reduction process ST14 is performed. In the pressure reduction process ST14, as shown in (c) of Figure 14 , the on-off valve V39 is set to the open state, and the on-off valves V31, V32, V33, and V34 are set to the closed state. The pressure reduction process ST14 is the same as the substrate processing method according to the first embodiment.

[0188] As described above, according to the third embodiment, throughout the pressure increase process ST12, a large flow rate of the processing fluid is supplied from the first supply flow path L31 to the inside of the processing container 311, and a small flow rate of the processing fluid is supplied from the second supply flow path L32 to the inside of the processing container 311. In this case, in the pressure increase process ST12, the backflow of the processing fluid from the inside of the processing container 311 toward the upstream of the second supply flow path L32 is prevented.

[0189] According to the third embodiment, during the entire period of the circulation process ST13, a large flow rate of the processing fluid is supplied into the processing container 311 from the second supply flow path L32, and a small flow rate of the processing fluid is supplied into the processing container 311 from the first supply flow path L31. In this case, during the circulation process ST13, the backflow of the processing fluid from inside the processing container 311 toward the upstream of the first supply flow path L31 is prevented.

[0190] (First modification example)

[0191] Refer to Figure 15 to describe the substrate processing apparatus 30A according to the first modification example of the third embodiment. Figure 15 FIG. is a diagram showing the substrate processing apparatus 30A according to the first modification example of the third embodiment.

[0192] The substrate processing apparatus 30A is structurally different from the substrate processing apparatus 30 in that the first supply flow path L31 and the second supply flow path L32 merge before being connected to the processing container 311 to supply the processing fluid to the same position inside the processing container 311. Other structures are the same as those of the substrate processing apparatus 30. Hereinafter, the description will focus on the structure different from that of the substrate processing apparatus 30.

[0193] The first supply flow path L31 and the second supply flow path L32 are arranged in parallel. The second supply flow path L32 branches off from the first supply flow path L31 at an upstream position of the heating mechanism HE31 and merges with the first supply flow path L31 at a downstream position of the on-off valve V31. The first supply flow path L31 and the second supply flow path L32 merge immediately before being connected to the processing container 311 to supply the processing fluid to the same position inside the processing container 311.

[0194] The substrate processing method performed using the substrate processing apparatus 30A can be the same as the substrate processing method performed using the substrate processing apparatus 30.

[0195] According to the first modification example of the third embodiment, during the entire period of the pressure boosting process ST12, a large flow rate of the processing fluid is supplied into the processing container 311 from the first supply flow path L31, and a small flow rate of the processing fluid is supplied into the processing container 311 from the second supply flow path L32. In this case, during the pressure boosting process ST12, the backflow of the processing fluid from the merging portion of the first supply flow path L31 and the second supply flow path L32 toward the upstream of the second supply flow path L32 is prevented.

[0196] According to the first modification of the third embodiment, during the entire period of the circulation process ST13, a large flow rate of the processing fluid is supplied into the processing container 311 from the second supply flow path L32, and a small flow rate of the processing fluid is supplied into the processing container 311 from the first supply flow path L31. In this case, in the circulation process ST13, backflow of the processing fluid from the confluence of the first supply flow path L31 and the second supply flow path L32 toward the upstream of the first supply flow path L31 is prevented.

[0197] (Second modification)

[0198] Refer to Figure 16 to describe the substrate processing apparatus 30B according to the second modification of the third embodiment. Figure 16 FIG. is a diagram showing the substrate processing apparatus 30B according to the second modification of the third embodiment.

[0199] The substrate processing apparatus 30B is structurally different from the substrate processing apparatus 30 in that the first connection flow path L33, the on-off valve V33, and the throttle orifice OR33 are not provided. Other structures are the same as those of the substrate processing apparatus 30.

[0200] Refer to Figure 17 to describe the substrate processing method performed using the substrate processing apparatus 30B. The following substrate processing method is automatically performed under the control of the control unit 34 based on the processing process and control program stored in the storage unit 342. Figure 17 FIG. is a diagram showing the flow of the processing fluid in the second modification of the third embodiment. Figure 17 (a) thereof shows the flow of the processing fluid in the boosting process ST12, Figure 17 (b) thereof shows the flow of the processing fluid in the circulation process ST13, Figure 17 (c) thereof shows the flow of the processing fluid in the depressurization process ST14.

[0201] The substrate processing method according to the second modification of the third embodiment includes a preparation process ST11, a boosting process ST12, a circulation process ST13, and a depressurization process ST14.

[0202] The preparation process ST11 is the same as the substrate processing method according to the first embodiment.

[0203] After the preparation process ST11, the boosting process ST12 is performed. In the boosting process ST12, as Figure 17 (a) thereof shows, the on-off valves V31 and V34 are set to the open state, and the on-off valves V32 and V39 are set to the closed state.

[0204] In the boosting process ST12, since the on-off valve V31 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE31 is supplied into the processing container 311 in a large flow rate through the on-off valve V31. In the boosting process ST12, since the on-off valve V32 is in the closed state and the on-off valve V34 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE32 passes through the orifice OR34, and thus the flow velocity decreases and is supplied into the processing container 311 in a small flow rate. Thereby, the processing fluid having a temperature closer to the first temperature than the second temperature is supplied into the processing container 311.

[0205] In the boosting process ST12, since the on-off valve V34 is in the open state, the processing fluid with a decreased flow velocity passing through the orifice OR34 is supplied into the processing container 311 throughout the entire boosting process ST12. Thereby, the backflow of the processing fluid from the inside of the processing container 311 toward the upstream of the second supply flow path L32 is prevented. Therefore, the retention of the residue of IPA between the on-off valve V34 and the processing container 311, in other words, on the secondary side of the on-off valve V34, can be suppressed.

[0206] In the boosting process ST12, since the on-off valve V39 is in the closed state, the processing fluid does not flow out of the processing container 311. Therefore, as Figure 3 shown, the pressure inside the processing container 311 gradually rises. In the boosting process ST12, the pressure of the processing fluid supplied into the processing container 311 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing container 311 in a gas state. After that, as the filling of the processing fluid into the processing container 311 progresses, the pressure inside the processing container 311 increases, and when the pressure inside the processing container 311 exceeds the critical pressure, the processing fluid existing inside the processing container 311 becomes a supercritical state. In the boosting process ST12, when the pressure inside the processing container 311 reaches the processing pressure higher than the critical pressure, the boosting process ST12 ends and the process transfers to the circulation process ST13.

[0207] After the boosting process ST12, the circulation process ST13 is performed. In the circulation process ST13, as Figure 17 shown in (b), the on-off valves V32 and V39 are set to the open state, and the on-off valves V31 and V34 are set to the closed state.

[0208] In the circulation process ST13, since the on-off valve V32 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE32 is supplied to the processing container 311 in a large flow rate through the on-off valve V32. In the circulation process ST13, since the on-off valve V31 is in the closed state, the processing fluid heated to the first temperature by the heating mechanism HE31 is not supplied to the processing container 311. Thus, the processing fluid at the second temperature is supplied to the processing container 311.

[0209] In the circulation process ST13, since the on-off valve V39 is in the open state, the processing fluid supplied to the processing container 311 is discharged from the processing container 311 via the discharge flow path L39. In the circulation process ST13, the supply of the processing fluid to the processing container 311 and the discharge of the processing fluid from the processing container 311 are performed simultaneously. Therefore, as Figure 3 shown, the pressure inside the processing container 311 is maintained at substantially constant. By performing the circulation process ST13, the replacement of IPA with the processing fluid in the concave portions of the pattern on the substrate W is promoted. When the replacement of the IPA with the processing fluid in the concave portions of the pattern is completed, the circulation process ST13 is ended and the pressure reduction process ST14 is started.

[0210] After the circulation process ST13, the pressure reduction process ST14 is performed. In the pressure reduction process ST14, as Figure 17 shown in (c), the on-off valve V39 is set to the open state, and the on-off valves V31, V32, and V34 are set to the closed state. The pressure reduction process ST14 is the same as the substrate processing method according to the first embodiment.

[0211] As described above, according to the second modification of the third embodiment, during the entire period of the pressure increase process ST12, a large flow rate of the processing fluid is supplied to the processing container 311 from the first supply flow path L31, and a small flow rate of the processing fluid is supplied to the processing container 311 from the second supply flow path L32. In this case, the backflow of the processing fluid from the processing container 311 to the upstream of the second supply flow path L32 is prevented during the pressure increase process ST12.

[0212] In the second modification of the third embodiment, the case where the first supply flow path L31 and the second supply flow path L32 do not merge midway but supply the processing fluid to different positions in the processing container 311 is described, but it is not limited thereto. For example, it may be the same structure as the substrate processing apparatus 30A according to the first modification of the third embodiment: the first supply flow path L31 and the second supply flow path L32 merge before being connected to the processing container 311 to supply the processing fluid to the same position in the processing container 311.

[0213] (Third modification)

[0214] Refer to Figure 18 to describe the substrate processing apparatus 30C according to the third modification of the third embodiment. Figure 18 FIG. is a view showing the substrate processing apparatus 30C according to the third modification of the third embodiment.

[0215] The difference in structure between the substrate processing apparatus 30C and the substrate processing apparatus 30 is that the second connection flow path L34, the on-off valve V34, and the throttle orifice OR34 are not provided. Other structures are the same as those of the substrate processing apparatus 30.

[0216] Refer to Figure 19 to describe the substrate processing method performed using the substrate processing apparatus 30C. The following substrate processing method is automatically executed under the control of the control unit 34 based on the processing process and control program stored in the storage unit 342. Figure 19 FIG. is a view showing the flow of the processing fluid in the third modification of the third embodiment. Figure 19 FIG. (a) shows the flow of the processing fluid in the boosting step ST12, Figure 19 FIG. (b) shows the flow of the processing fluid in the circulation step ST13, Figure 19 FIG. (c) shows the flow of the processing fluid in the pressure reduction step ST14.

[0217] The substrate processing method according to the third modification of the third embodiment includes a preparation step ST11, a boosting step ST12, a circulation step ST13, and a pressure reduction step ST14.

[0218] The preparation step ST11 is the same as the substrate processing method according to the first embodiment.

[0219] After the preparation step ST11, the boosting step ST12 is performed. In the boosting step ST12, as Figure 19 shown in FIG. (a), the on-off valve V31 is set to the open state, and the on-off valves V32, V33, and V39 are set to the closed state.

[0220] In the boosting step ST12, since the on-off valve V31 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE31 is supplied to the inside of the processing container 311 in a large flow rate through the on-off valve V31. In the boosting step ST12, since the on-off valve V32 is in the closed state, the processing fluid heated to the second temperature by the heating mechanism HE32 is not supplied to the inside of the processing container 311. Thus, the processing fluid at the first temperature is supplied to the inside of the processing container 311.

[0221] In the boosting step ST12, since the on-off valve V39 is in the closed state, the processing fluid does not flow out of the processing container 311. Therefore, as Figure 3As shown, the pressure inside the processing container 311 gradually rises. In the pressure increasing step ST12, the pressure of the processing fluid supplied into the processing container 311 is lower than the critical pressure. Therefore, the processing fluid is supplied into the processing container 311 in a gas state. After that, as the filling of the processing fluid into the processing container 311 progresses, the pressure inside the processing container 311 increases. When the pressure inside the processing container 311 exceeds the critical pressure, the processing fluid present in the processing container 311 becomes a supercritical state. In the pressure increasing step ST12, when the pressure inside the processing container 311 reaches the processing pressure higher than the critical pressure, the pressure increasing step ST12 ends and the flow-through step ST13 is entered.

[0222] After the pressure increasing step ST12, the flow-through step ST13 is performed. In the flow-through step ST13, as shown in Figure 19 (b) of, the on-off valves V32, V33, and V39 are set to the open state, and the on-off valve V31 is set to the closed state.

[0223] In the flow-through step ST13, since the on-off valve V32 is in the open state, the processing fluid heated to the second temperature by the heating mechanism HE32 is supplied into the processing container 311 in a large flow rate through the on-off valve V32. In the flow-through step ST13, since the on-off valve V31 is in the closed state and the on-off valve V33 is in the open state, the processing fluid heated to the first temperature by the heating mechanism HE31 passes through the orifice OR33, and thus the flow velocity decreases and the processing fluid is supplied into the processing container 311 in a small flow rate. Thereby, the processing fluid having a temperature closer to the second temperature than the first temperature is supplied into the processing container 311.

[0224] In the flow-through step ST13, since the on-off valve V33 is in the open state, the processing fluid whose flow velocity has decreased through the orifice OR33 is supplied into the processing container 311 throughout the entire period of the flow-through step ST13. Thereby, the backflow of the processing fluid from inside the processing container 311 toward the upstream of the first supply flow path L31 is prevented. Therefore, the retention of the residue of IPA between the on-off valve V33 and the processing container 311, in other words, on the secondary side of the on-off valve V33, can be suppressed.

[0225] In the flow-through step ST13, since the on-off valve V39 is in the open state, the processing fluid supplied into the processing container 311 is discharged from the processing container 311 via the discharge flow path L39. In the flow-through step ST13, the supply of the processing fluid into the processing container 311 and the discharge of the processing fluid from the processing container 311 are performed simultaneously. Therefore, as shown in Figure 3As shown, the pressure inside the processing container 311 is maintained at approximately a fixed value. By performing the circulation process ST13, the replacement of IPA with the processing fluid inside the concave portions of the patterns on the substrate W is promoted. When the replacement of the processing fluid for IPA inside the concave portions of the patterns is completed, the circulation process ST13 is ended and the pressure reduction process ST14 is started.

[0226] After the circulation process ST13, the pressure reduction process ST14 is performed. In the pressure reduction process ST14, as shown in (c) of Figure 19 , the on-off valve V39 is set to the open state and the on-off valves V31, V32, and V33 are set to the closed state. The pressure reduction process ST14 is the same as the substrate processing method according to the first embodiment.

[0227] As described above, according to the third modification of the third embodiment, during the entire period of the circulation process ST13, a large flow rate of the processing fluid is supplied from the second supply flow path L32 into the processing container 311, and a small flow rate of the processing fluid is supplied from the first supply flow path L31 into the processing container 311. In this case, during the circulation process ST13, the backflow of the processing fluid from inside the processing container 311 toward the upstream of the first supply flow path L31 is prevented.

[0228] During the circulation process ST13, the pressure inside the processing container 311 rises and the processing fluid becomes in a supercritical state. Therefore, compared with the pressure increase process ST12, the processing fluid is more likely to diffuse and the backflow of the processing fluid is more likely to occur. Therefore, from the viewpoint of preventing the backflow of the processing fluid, it is particularly effective to supply a large flow rate of the processing fluid from the second supply flow path L32 into the processing container 311 and supply a small flow rate of the processing fluid from the first supply flow path L31 into the processing container 311 during the entire period of the circulation process ST13.

[0229] In the third modification of the third embodiment, the case where the first supply flow path L31 and the second supply flow path L32 do not merge midway but supply the processing fluid to different positions inside the processing container 311 is described, but it is not limited thereto. For example, it may also have the same structure as the substrate processing apparatus 30A according to the first modification of the third embodiment: the first supply flow path L31 and the second supply flow path L32 merge before being connected to the processing container 311 to supply the processing fluid to the same position inside the processing container 311.

[0230] The embodiments disclosed this time should be considered illustrative in all aspects and not restrictive. The above embodiments can be omitted, replaced, and changed in various ways without departing from the appended claims and their gist.

[0231] Explanation of Reference Numerals

[0232] 12, 22, 32: Fluid supply units; 14, 24, 34: Control units; 111, 211, 311: Processing containers; L11, L21, L31: First supply flow paths; L12, L22, L32: Second supply flow paths; L13: First bypass flow path; L14: Second bypass flow path; L23, L33: First connection flow paths; L24, L34: Second connection flow paths; OR13, OR14, OR23, OR24, OR33, OR34: Throttle holes; HE11, HE21, HE31: Heating mechanisms; HE12, HE22, HE32: Heating mechanisms.

Claims

1. A fluid supply system for supplying a fluid into a processing container in which a substrate is processed, the fluid supply system comprising: a fluid supply portion that supplies a process fluid; and a control unit that controls the fluid supply unit, in, The fluid supply unit comprises: a first supply flow path, which is used to supply the processing fluid into the processing container; a second supply flow path, which is used to supply the processing fluid into the processing container; a first heating mechanism, disposed in the first supply flow path, for heating the treatment fluid to a first temperature; a second heating mechanism, disposed in the second supply flow path, for heating the treatment fluid to a second temperature; as well as a flow regulating mechanism disposed at least one of a position downstream of the first heating mechanism in the first supply flow path and a position downstream of the second heating mechanism in the second supply flow path, the flow regulating mechanism being used to regulate the flow of the treatment fluid, During the entire period of supplying the processing fluid into the processing container to process the substrate, the control unit controls the fluid supply unit to supply the processing fluid into the processing container from at least one of the first supply flow path and the second supply flow path having the flow adjustment mechanism.

2. The fluid supply system according to claim 1, wherein: The fluid supply unit comprises: a first on-off valve provided in the first supply flow path; and The second on-off valve is provided in the second supply flow path.

3. The fluid supply system according to claim 2, wherein: The flow adjustment mechanism has: a first bypass flow path that bypasses the first supply flow path by connecting an upstream side and a downstream side of the first opening and closing valve; and The first throttle portion is provided in the first bypass flow path.

4. The fluid supply system according to claim 3, wherein: The flow adjustment mechanism has: a second bypass flow path for bypassing the second supply flow path by connecting an upstream side and a downstream side of the second on-off valve; as well as The second throttle portion is provided in the second bypass flow path.

5. The fluid supply system according to claim 2, wherein: The flow adjustment mechanism has: a first connecting flow path connecting an upstream side of the first opening and closing valve in the first supply flow path and a downstream side of the second opening and closing valve in the second supply flow path; as well as The third throttling portion is provided in the first connecting flow path.

6. The fluid supply system according to claim 5, wherein: The flow adjustment mechanism has: a second connecting flow path connecting an upstream side of the second opening and closing valve in the second supply flow path and a downstream side of the first opening and closing valve in the first supply flow path; as well as A fourth throttling portion is provided in the second connecting flow path.

7. The fluid supply system according to claim 6, wherein: The second connecting flow path merges with the first connecting flow path midway and then branches off again.

8. The fluid supply system according to claim 6, wherein: The second connecting flow path does not merge with the first connecting flow path.

9. The fluid supply system according to any one of claims 1 to 8, wherein: The flow rate adjustment mechanism is provided in the second supply flow path, The control unit divides a period during which the processing fluid is supplied into the processing container to process the substrate into a first period and a second period. The control unit controls the fluid supply unit to supply the processing fluid into the processing container from the first supply channel and the second supply channel during the first period, and to supply the processing fluid into the processing container only from the second supply channel during the second period.

10. The fluid supply system according to any one of claims 1 to 8, wherein: The flow rate adjustment mechanism is provided in the first supply flow path, The control unit divides a period during which the processing fluid is supplied into the processing container to process the substrate into a first period and a second period. The control unit controls the fluid supply unit to supply the processing fluid into the processing container only from the first supply channel during the first period, and to supply the processing fluid into the processing container from the first supply channel and the second supply channel during the second period.

11. The fluid supply system according to any one of claims 1 to 8, wherein: The second temperature is a temperature higher than the first temperature.

12. The fluid supply system according to any one of claims 1 to 8, wherein: The first supply flow path and the second supply flow path supply the processing fluid to different positions in the processing container.

13. The fluid supply system according to any one of claims 1 to 8, wherein: The first supply flow path and the second supply flow path merge before being connected to the processing container, and supply the processing fluid to the same position in the processing container.

14. A substrate processing method, comprising: using a fluid supply system for supplying a fluid into a processing container in which a substrate is processed; The fluid supply system includes a fluid supply unit, and the fluid supply unit supplies a treatment fluid. The fluid supply unit comprises: a first supply flow path, which is used to supply the processing fluid into the processing container; a second supply flow path, which is used to supply the processing fluid into the processing container; a first heating mechanism, disposed in the first supply flow path, for heating the treatment fluid to a first temperature; a second heating mechanism, disposed in the second supply flow path, for heating the treatment fluid to a second temperature; as well as a flow regulating mechanism disposed at least one of a position downstream of the first heating mechanism in the first supply flow path and a position downstream of the second heating mechanism in the second supply flow path, the flow regulating mechanism being used to regulate the flow of the treatment fluid, During the entire period in which the processing fluid is supplied into the processing container to process the substrate, the processing fluid is supplied into the processing container from at least one of the first supply channel and the second supply channel having the flow rate adjustment mechanism. 15 . A computer-readable recording medium having a program recorded thereon for causing a computer to execute the substrate processing method according to claim 14 .

Citation Information

Patent Citations

  • Substrate processing apparatus and substrate processing method

    JP2021086857A