Semiconductor package, power semiconductor module and manufacturing method

Abstract

The invention relates to a semiconductor package, a power semiconductor module and a manufacturing method. The semiconductor package has: a power semiconductor (22) equipped with a first side (30), an opposite second side (32) and a control terminal (34) on the first side; a first contact unit (24) for contacting the first side, the first contact unit being in thermal and electrical contact with a majority of the first side in a planar manner; a second contact unit (26) for contacting the second side, the second contact unit being in thermal and electrical contact with a majority of the second side in a planar manner; and a terminal connection means (28) for connecting the control terminals of the power semiconductor to the control unit. The invention also relates to a power semiconductor module (18) for a traction converter (12) and to a method for producing a plurality of semiconductor packages (20).

Description

Technical Field

[0001] A semiconductor package according to the present invention relates to a power semiconductor module for a traction converter. Furthermore, the present invention also relates to a power semiconductor module for a traction converter and a method for manufacturing a semiconductor package. Background Art

[0002] The power electronic system of electric and hybrid vehicles transfers the traction energy from the battery to the electric motor, where direct current is converted into alternating current. For this purpose, an AC inverter, also known as an inverter or traction converter, is provided. Usually, multiple transistors or other power semiconductors are applied here, which are combined into a power semiconductor module and switched at short and regular intervals. In particular, in this context, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are used as switches. In the conducting state, the battery current conducts to the motor (conducting phase). Through a high-frequency switching process, the voltage waveform of the alternating voltage is obtained, which can then be converted into traction energy in the electric motor. To increase the current-carrying capacity, in most cases, multiple power semiconductors are connected in parallel in the (topological) switch.

[0003] Here, the manufacturing process of such a power semiconductor module usually includes different technically demanding steps. Generally, individually separated power semiconductors (also called chips or semiconductor chips) are applied to a ceramic substrate, which is also suitable for discharging the generated heat. The ceramic substrate is in turn applied to a base plate with a cooling structure, where, for example, welding, sintering, or thermal paste processes are used for this application. The contact of the drain, source, and gate terminals of the individual power semiconductors is usually implemented in a wire bonding process. The wires are connected to the corresponding terminals of the power semiconductor in order to electrically contact these terminals with the corresponding wires. Usually, after the connection, multiple power semiconductors or power semiconductor modules are encapsulated with a casting material during the casting process in order to provide a package or semiconductor package, which can be used as a component in a traction converter.

[0004] In this regard, DE 10 2022 202 254A1 discloses a modular half-bridge module formed by at least two power semiconductor modules. Each power semiconductor module includes a first outer substrate, a semiconductor switch chip, an intermediate substrate, a diode chip, and a second outer substrate, which are stacked on top of each other in this order. The semiconductor switch is bonded to the first outer substrate with the positive terminal and to the intermediate substrate with the negative terminal. The diode chip is bonded to the second outer substrate with the anode terminal and to the intermediate substrate with the cathode terminal. The diode chip is anti-parallel electrically connected to the semiconductor switch chip through the substrate. At least two power semiconductor modules are electrically connected to each other to form a half-bridge.

[0005] Due to the relatively difficult processing of power semiconductors (chip processing) and due to the relatively complex contacts, this manufacturing process has hitherto generally been complex and has also enabled fewer deformations. For power semiconductor modules with higher / lower power, different form factors, or different numbers of individual power semiconductors in the module, hitherto a change in the entire manufacturing has generally been required. This has led to high costs as well as low efficiency and poor scalability. Summary of the Invention

[0006] Based on this, the object of the present invention is to provide a method for efficiently manufacturing and flexibly using components for power semiconductors and power semiconductor modules in a traction converter. In particular, it should be possible to achieve as efficient a manufacturing as possible to reduce costs and flexibility with respect to different form factors with different time limits.

[0007] To solve this problem, in a first aspect, the present invention relates to a semiconductor package for a power semiconductor module of a traction converter, having:

[0008] - a power semiconductor having a first side, an opposing second side, and control terminals on the first side;

[0009] - a first contact unit for contacting the first side, wherein the first contact unit makes a large-area thermal and electrical contact with most of the first side;

[0010] - a second contact unit for contacting the second side, wherein the second contact unit makes a large-area thermal and electrical contact with most of the second side; and

[0011] - a terminal connection device for connecting the control terminals of the power semiconductor to the terminals of the control unit.

[0012] In another aspect, the present invention relates to a power semiconductor module for a traction converter having a plurality of semiconductor packages as described above.

[0013] In another aspect, the present invention relates to a method for manufacturing a plurality of semiconductor packages as described above, comprising the steps of:

[0014] - providing a carrier structure made of a current-conducting and heat-conducting material;

[0015] - applying a plurality of power semiconductors to the carrier structure, and the second sides of the plurality of power semiconductors are in electrical and thermal contact with the carrier structure;

[0016] - separating the carrier structure to generate a plurality of semiconductor packages each having at most two power semiconductors, preferably one power semiconductor; and

[0017] - The calculation of the electrical parameters for each of the plurality of semiconductor packages is implemented in a test process, and the semiconductor packages are classified based on said parameters.

[0018] Preferred embodiments according to the present invention are set forth in the dependent claims. It should be understood that the above features and the features to be set forth below can be used not only in the combinations correspondingly described, but also in other combinations or alone without departing from the scope according to the present invention. In particular, the semiconductor package, the power semiconductor module, and the method for manufacturing a plurality of semiconductor packages can be implemented according to the embodiments set forth in the dependent claims for the semiconductor package.

[0019] According to the provisions of the present invention, electrical and thermal contacts are made over a large area on both sides of the power semiconductor. The first side (upper side) of the power semiconductor can correspond to the drain or source terminal of the power semiconductor. In this regard, the first contact unit is not only used for introducing or discharging (high) current, but also for discharging the heat generated during switching. The second side (lower side) of the power semiconductor can correspondingly correspond to the drain or source terminal of the power semiconductor in the same way, and is also used for introducing or discharging (high) current and discharging the generated heat.

[0020] Two contact units are in large-area contact corresponding to most of the first side and the second side of the power semiconductor. In this regard, good electrical and thermal contacts are obtained. High current can be conducted, and heat can be effectively discharged. Losses are minimized. Different from the methods heretofore, the current flow is implemented substantially perpendicular to the plane of the power semiconductor.

[0021] The control terminal (gate terminal) of the power semiconductor is connected by a terminal connection device. According to the present invention, the control terminal is located on the first side of the power semiconductor. The connection to the corresponding control unit (a part not of the semiconductor package) is implemented. The control unit can be designed, for example, to correspondingly control the power semiconductor or the switch. The control unit can be arranged, for example, in the power semiconductor module, or can also be centrally arranged in the traction converter.

[0022] The power semiconductor module according to the present invention is particularly designed for the traction converter of a vehicle. In the traction converter, the DC voltage of the battery is converted into the AC voltage of the motor. Thus, relatively high current is switched. It should be understood that multiple semiconductor packages according to the present invention connected in parallel are usually applied for switching herein.

[0023] The semiconductor package according to the present invention particularly corresponds to a chip scale package (CSP). The semiconductor package can be said to be a method for simplifying to basic components and for designing the smallest possible unit of the power semiconductor.

[0024] Different from the methods for constructing power semiconductor modules or packaging power semiconductors to date, the semiconductor package according to the present invention does not provide or does not require an insulating layer for electrical insulation, especially a large-area insulating layer on the upper and lower sides of the power semiconductor or on the contact components. In this regard, the semiconductor package according to the present invention corresponds to a minimal component or a simplified method, which is simplified to the basic components. By omitting the (electrical insulation) insulating layer, improved heat dissipation can usually also be achieved because such an insulating layer for electrical insulation also hinders heat dissipation.

[0025] In addition, the semiconductor package according to the present invention enables effective reprocessing. In particular, it can realize different power semiconductor modules especially with respect to power and form factor; created based on the semiconductor package. Thereby, the corresponding complexity for adjustment when, for example, the power requirement increases or in another form factor case can be reduced. This achieves improved flexibility in manufacturing. The simple manufacturability of the semiconductor package can be realized. In addition, good scalability in manufacturing can also be achieved.

[0026] In particular, a three-dimensional structure of the power semiconductor module can be realized. In other words, the semiconductor packages can also be arranged at least partially overlapping and still ensure effective current flow.

[0027] In a preferred embodiment, the semiconductor package includes at most two power semiconductors. Additionally or alternatively, the semiconductor package is encapsulated with potting compound. By applying at most two and preferably exactly one power semiconductor in one semiconductor package, the smallest package size is obtained. The flexibility regarding application is maximized. In addition, other advantages are obtained during the manufacturing process, for example, by omitting the classification of the unprocessed power semiconductors (which is relatively complex). A robust semiconductor package is obtained by applying potting compound. Hard or soft potting compound can be used for potting. It should be understood that here, the corresponding contact points of the contact unit and the terminal connection device are preferably led outwards to connect the corresponding conductors for conducting current or signals.

[0028] In a preferred embodiment, the first contact unit is designed as a metallization layer, preferably a copper metallization layer, or is designed as a rigid component, preferably a copper block. Additionally or alternatively, the second contact unit is designed as a rigid component, preferably a copper carrier. For the first contact unit, a rigid component made of a current-guiding and heat-conducting material can be used. By using a rigid component, good contact can be achieved. In addition, effective manufacturability is obtained. Good current-guiding and heat-conductivity can be provided by using copper as the material. By using a metallization layer, possible advantages in the manufacturing process can be achieved. Effective manufacturing can be realized. The second contact unit can in particular be designed as a carrier component (lead frame). By using a rigid component, effective manufacturability and mechanical stability can also be obtained here.

[0029] In the preferred embodiment, the first contact unit is in large-area contact with at least 60%, preferably at least 70%, particularly preferably at least 80% of the first side of the power semiconductor. Additionally or alternatively, the second contact unit is in large-area contact with the entire second side of the power semiconductor. Contacting a majority of the area is particularly understood to mean that the contact extends over more than half of the area. However, it is preferred that the contact range is larger and extends over a larger area ratio of the first side or the second side of the power semiconductor. In particular, it is feasible here that the second contact unit contacts the entire second side of the power semiconductor. Here, for the first side, slightly worse thermal and electrical contacts can be accepted in order to additionally enable the connection of the control terminal. In this way, effective manufacturability is achieved with good electrical and thermal properties.

[0030] In a preferred embodiment, the terminal connection device includes a flexible circuit board having conductor traces. It should be understood that other conductor traces can also be arranged on the flexible circuit board so that, for example, the Kelvin source extreme terminal of the power semiconductor can be led outwards and controlled. Effective manufacturability can be obtained by using a flexible circuit board as the terminal connection device. In addition, mechanical robustness can also be provided. Additionally, other possibilities are provided with regard to the use of other components (such as sensors).

[0031] In a preferred embodiment, a sintered connection is arranged between the first contact unit and the first side of the power semiconductor and / or between the second contact unit and the second side of the power semiconductor. Sintering can particularly be selected as the connection technique. A mechanically stable as well as electrically and thermally advantageous connection is obtained. Additionally, since the sintered connection can achieve a higher temperature, effective manufacturability can be obtained.

[0032] In a preferred embodiment, the cross-section of the first contact unit parallel to the plane of the power semiconductor is smaller in the region where the first contact unit contacts the first side of the power semiconductor than in the region where there is a spacing between the first contact unit and the first side of the power semiconductor. Here, the cross-section change is preferably discrete. By increasing the cross-sectional area as the spacing on the upper surface or the first side of the power semiconductor increases, heat dissipation can be improved. In this regard, a further improvement in efficiency is obtained during the operation of the semiconductor package in the power semiconductor module of the traction converter. The cross-section change is preferably discrete. In particular, steps can be provided, where the cross-section increases stepwise. The steps or the discrete cross-section change can be effectively achieved. Additionally in this regard, a groove can also be provided for the terminal connection device connecting the control terminal of the first side of the power semiconductor.

[0033] In a preferred embodiment, the power semiconductor includes another control terminal on a first side. The terminal connection device is preferably designed for the contact of the another control terminal with the control unit. In particular, a Kelvin source terminal can be provided as the another control terminal. It can also be connected to the control unit (part of the non-semiconductor package) in order to provide or process control signals in this regard. A further improvement in the manufacturing efficiency of the semiconductor package is obtained. In this regard, a semiconductor package with other functions can be provided.

[0034] In a preferred embodiment, the semiconductor package does not include a large-area insulation unit for electrical insulation of most of the first side of the power semiconductor and / or most of the second side of the power semiconductor. In particular, the ceramic layer is not part of the semiconductor package. Such a ceramic layer can achieve electrical insulation while conducting heat. Although the large-area insulation unit (especially the ceramic layer) has thermal conductivity, it usually hinders the heat flow. In this regard, a further improvement in the operating performance of the semiconductor package is obtained by omitting the large-area insulation unit.

[0035] In a preferred embodiment of the power semiconductor module, the first half of the plurality of semiconductor packages is arranged rotated 180° relative to the second half of the plurality of semiconductor packages, so that the first contact unit of the first half of the plurality of semiconductor packages is oriented in the same direction as the second contact unit of the second half of the plurality of semiconductor packages. Here, the orientation direction is particularly understood as being perpendicular to the plane of the (large-area) power semiconductor. In this regard, the halves of the power semiconductor or the semiconductor package can be said to be inverted. Effective contact is achieved through this arrangement. In particular, the use of wire bonding can be largely omitted. In this regard, effective manufacturability can be achieved.

[0036] In this context, the power semiconductor module is particularly understood as a component for an inverter structure or a traction converter in a vehicle. The power semiconductor or semiconductor switch particularly corresponds to a transistor or a chip. Generally, a plurality of transistors form a topology switch. In this regard, the power semiconductor module includes a plurality of semiconductor switches or a plurality of power semiconductors. The power semiconductor particularly corresponds to a MOSFET. The power semiconductor usually has at least one gate terminal, one source terminal and one drain terminal, and may also have a Kelvin source terminal. Electrical contact and thermal contact are connections that conduct current and heat in a low-resistance manner. Large-area contact is particularly understood as a connection along a relatively large area or the total area. In particular, in this context, large-area contact is contact without using bonding wires. Description of the Drawings

[0037] The following further illustrates and elaborates on the present invention in combination with several selected embodiments and the drawings. Among them:

[0038] Figure 1Schematic diagram of a vehicle having a power semiconductor module according to the present invention in a traction converter;

[0039] Figure 2 Schematic diagram showing a semiconductor package according to the present invention;

[0040] Figure 3a 、 Figure 3b Schematic diagram showing possible applications of the semiconductor package according to the present invention on the low side and high side of a half - bridge circuit;

[0041] Figures 4a to 4d Schematic diagram showing different further embodiments of the semiconductor package according to the present invention;

[0042] Figure 5 Schematic diagram showing an embodiment of a semiconductor package according to the present invention with a gradually increasing cross - sectional area of a first contact unit;

[0043] Figure 6 Schematic diagram showing a semiconductor package according to the present invention including a terminal connection device having a flexible circuit board;

[0044] Figures 7a to 7d Schematic diagrams showing different embodiments of the semiconductor package according to the present invention in a top view; and

[0045] Figure 8 Schematic diagram showing a method for manufacturing a plurality of semiconductor packages according to the present invention. Detailed description of the invention

[0046] Figure 1 A vehicle 10 having a traction converter 12 is schematically shown. The traction converter 12 is arranged between a battery 14 and an electric motor 16 of the vehicle 10 in order to convert the direct current of the battery 14 into alternating current required by the electric motor 16. The traction converter 12 has a power semiconductor module 18 according to the present invention, which in turn has a plurality of semiconductor packages 20 according to the present invention. Furthermore, a control unit 21 is provided, which is used to drive different semiconductors in the semiconductor package 20, and the control unit is in particular connected to the corresponding gate terminals of the semiconductors. Figure 1 The views in should be understood as schematic side sectional views. In the illustrated embodiment, the power semiconductor module 18 has two semiconductor packages. It should be understood that generally, a plurality of power semiconductor modules each having a plurality of semiconductor packages are arranged in the traction converter 12.

[0047] According to the present invention, it is provided that a semiconductor package 20 is used, which is implemented in the CSP type. In particular, the semiconductor package 20 according to the present invention preferably has at most two individual power semiconductors (chips), and in this regard, represents a unit within the size range of an individual chip or an individual power semiconductor.

[0048] Figure 2 Schematically shows an embodiment of a semiconductor package 20 according to the present invention. The semiconductor package 20 has a power semiconductor 22, a first contact unit 24, a second contact unit 26, and a terminal connection device 28. The semiconductor package 20 is potted with potting compound 29. This view should be understood as a side sectional view. The individual components are not shown to scale in terms of their extent, in particular their thickness. The thickness of the power semiconductor is typically in the range of a few hundred micrometers. The components for guiding current are generally relatively thicker. In this regard, Figure 2 the view in [] should be generally understood as a principle visualization view.

[0049] The power semiconductor 22 corresponds to a chip and is generally configured in a planar form. The power semiconductor 22 has a first side 30 (which corresponds to the upper side in the figure) and a second side 32 (which corresponds to the lower side in the figure). Control terminals 34 are arranged on the first side 30, which in particular correspond to the gate terminals of the power semiconductor 22. Particularly advantageously, the semiconductor package according to the present invention does not require the use of a planar insulation unit. In particular, there is no insulation layer for electrical insulation between the first side 30 of the power semiconductor 22 and the components in the direction towards the first contact unit 24. This enables improved thermal contact and efficient manufacturing.

[0050] The first contact unit 24 is in electrical and thermal contact with the first side 30 of the power semiconductor 22. Here, the contact is planar and covers most of the first side 30. Thus, the electrical and thermal contact extends at least over half of the first side 30 or the upper side or the upper surface of the power semiconductor 22. Preferably, the first contact unit 24 is in planar contact or connection with more than 60%, 70%, or even more than 80% of the first side 30 of the power semiconductor 22. Through the first contact unit 24, the first side 30 of the power semiconductor 22 is coupled to the DC current side or the AC current side of a half-bridge circuit. In this regard, the drain terminal or the source terminal of the power semiconductor 22 is contacted through the first contact unit 24. In addition to the electrical contact for guiding current, a thermal path is also provided through the first contact unit 24 to dissipate the switching heat.

[0051] The second contact unit 26 is in contact with the second side 32 of the power semiconductor 22. The second contact unit 26 is also in planar thermal and electrical contact with most of the second side 32 of the power semiconductor 22. In the preferred embodiment shown in the figure, the entire second side 32 is in contact with the second contact unit 26.

[0052] In the illustrated embodiment, the first contact unit 24 is designed as a rigid component. In particular, contact can be achieved by means of a copper block as the first contact unit 24. In an alternative embodiment, it is also conceivable to use a copper metallization layer as the first contact unit 24. For this purpose, the application process can be carried out, for example, by evaporation. The second contact unit 26 can likewise be designed, for example, as a rigid component. For example, a copper carrier (lead frame) can correspond to the second contact unit 26.

[0053] In the illustrated embodiment, the contact between the first contact unit 24 and the power semiconductor 22 or between the second contact unit 26 and the power semiconductor 22 is realized by means of a sintered connection 36 respectively. It should be understood that soldering or other connection techniques can also be used alternatively or additionally.

[0054] The terminal connection device 28 connects the control terminal 34 of the power semiconductor 22 to a control unit (outside the semiconductor package). In the illustrated embodiment, the terminal connection device 28 particularly includes bonding wires. It should be understood that other connection components can also be used.

[0055] In the illustrated embodiment, the power semiconductor 22 includes an (optional) further control terminal 38, which is also arranged on the first side 30 of the power semiconductor 22 and is contacted outwardly by means of an (optional) further terminal connection device 40. This further control terminal 38 can, for example, implement the connection of the Kelvin source terminal of the power semiconductor 22. In the illustrated example, the further control terminal 38 is led outwardly by means of a further terminal connection device 40 or a separate bonding wire. However, alternatively, it can be realized that both the control terminal 34 and the further control terminal 38 are connected to the control unit by means of a common terminal connection device. For this purpose, for example, a flexible printed circuit board with two conductor traces can be used as the (common) terminal connection device.

[0056] Compared with the prior art methods, the structure of the semiconductor package 20 according to the invention enables a CSP implementation. Thus, the least number of required components is used. A power semiconductor module can be constructed from a plurality of semiconductor packages 20 according to the invention. Here, a greater design flexibility is obtained because different numbers of semiconductor packages can be used together. In addition, the shape of the power semiconductor module can be adjusted at a relatively low cost because, based on its individual implementation, a plurality of semiconductor packages can be rearranged without problems.

[0057] In Figure 3a and Figure 3b it is shown that, in the case of otherwise identical embodiments, the semiconductor package 20 according to the invention can be used for the low side or the high side of a half-bridge circuit by rotating it by 180°.

[0058] Regarding Figure 3a andFigure 3b and subsequent Figures 4a to 4d 、 Figure 5 、 Figure 6 and Figures 7a to 7d in the attached drawing reference numerals, see the above regarding Figure 2 embodiments. The same reference numerals denote the same components, and the attached drawing regions with the same shading correspond to the same components. To avoid repetition and improve the overview, all attached drawing reference numerals are not reintroduced separately and are not marked in the figures. In particular, the differences between different embodiments and the resulting possibilities for variation are explored.

[0059] In Figure 3a and Figure 3b views, it can be seen that the semiconductor package 20 according to the present invention can achieve a three-dimensional structure. In particular, stacking can be achieved, wherein the semiconductor package 20 used in the power semiconductor module has its first half oriented 180° with respect to the second half. Here, rotating 180° is particularly understood as the use corresponding to the attached drawings of semiconductor packages with the same construction in other respects but opposite orientations. For example, one half of the semiconductor package in the power semiconductor module can be oriented as shown in Figure 3a , while the other half is oriented as shown in Figure 3b . The choice of the application aspect of changing the orientation can simplify the manufacture of a power semiconductor module composed of multiple semiconductor packages and provide flexibility regarding the shape of the power semiconductor module. In addition, efficient manufacture can also be obtained.

[0060] Figures 4a to 4d shows different options for contacting the control terminal 34 and (optional) another control terminal 38. Figure 4a shows a scheme in which the interception is achieved centered on both sides in a side view. Figure 4b shows a scheme in which the interception is achieved from above. Figure 4c shows a scheme in which the interception is achieved centered on the same side. Figure 4d shows a scheme in which the interception is achieved above the side, where it is shown as understood that the control terminal 34 is offset backward (deep into the plane of the drawing) with respect to the other control terminal 38. This also applies to the terminal connection devices 28, 40.

[0061] Figure 5Shows an embodiment of a semiconductor package according to the present invention, wherein, on a first side 30 of a power semiconductor 22, a cross-section of a first contact unit 24 parallel to a plane of the power semiconductor 22 increases as a distance from the first side 30 of the power semiconductor 22 increases. Thus, the cross-section of the first contact unit becomes larger and improved heat dissipation can be achieved accordingly. In the illustrated example, the cross-section change is implemented discontinuously in a stepped form here. It should be understood that other cross-section changes (such as continuous cross-section changes) are also conceivable.

[0062] Figure 6 Shows an embodiment, wherein a terminal connection device 28 is provided, which is configured in the form of a flexible circuit board. Conductor traces can be provided on the flexible circuit board, through which control terminals of the power semiconductor 22 are contacted. It is also feasible to provide two conductor traces, through which control terminal 34 and another control terminal 38 can be contacted. Thus, the terminal connection device 28 can so-called serve as a common terminal connection device to lead out the control terminal and another control terminal outward especially through two conductor traces. In addition, in this embodiment, additional functions can also be achieved based on additional conductor traces and possibly additional components.

[0063] Figures 7a to 7d Shows a further embodiment of a semiconductor package 20 according to the present invention. Here, Figures 2 to 6 compared with the Figures 7a to 7d shown side sectional view, Figures 7a to 7d the view in

[0064] Figure 8 should be understood as a schematic top view. Figures 7a to 7d The top views in

[0064] Figure 8 respectively show that the semiconductor package 20 has two power semiconductors 22 in these examples. The two power semiconductors 22 can be respectively in contact with the same first contact unit 24 and the same second contact unit 26. Each of the two power semiconductors 22 has a terminal connection device 28 and another terminal connection device 40 to contact control terminal 34 and (optionally) another control terminal 38. Here, the contact is achieved in different ways and different directions.

[0064] Figure 8 Schematically shows a method according to the present invention for manufacturing a plurality of semiconductor packages. This method especially corresponds to a method for producing semiconductor packages. Thus, this method can be implemented, for example, in a corresponding manufacturing apparatus or by means of a corresponding manufacturing facility. It should be understood that the optional steps are not necessarily required to achieve the advantages obtainable according to the present invention. In addition, it should be understood that the optional steps can also be executed in a different order.

[0065] This method has a step S10 of providing a carrier structure made of a material that conducts current and conducts heat, wherein a lead frame panel can be used in particular.

[0066] The method has the step of (optionally) applying S12 sintering paste to connect the power semiconductors.

[0067] The method has the steps of applying S14 a plurality of power semiconductors to a carrier structure and making the second sides of the plurality of power semiconductors in electrical and thermal contact with the carrier structure. For this purpose, for example, a chip pick and place method (ChipPick and Place-Verfahren) can be used.

[0068] In a subsequent optional step of connecting S16 the upper contact parts to the first sides of the plurality of power semiconductors, for example, copper blocks can be respectively inserted as first contact units onto each of the power semiconductors. For this purpose, for example, a chip pick and place method can also be used. For example, the connection can be established in a sintering process.

[0069] In a subsequent optional step of establishing connection S18, connections of the control terminals of different power semiconductors are established. For this purpose, for example, a wire bonding process can be used. In particular, the control terminals and possibly another control terminal can be correspondingly contacted in order to enable control of the power semiconductors.

[0070] In a subsequent pouring S20 step, a casting material can be applied to pour each individual semiconductor package.

[0071] In a subsequent step of separating the carrier structure S22 to produce a plurality of semiconductor packages each having at most two power semiconductors, preferably one power semiconductor, the power semiconductors are separated out.

[0072] Subsequently, in an optional trimming and shaping S24 step, trimming and shaping of the individual semiconductor packages can be achieved.

[0073] In another step of acquisition and classification S26, the acquisition of the electrical parameters for each of the semiconductor packages for a plurality of semiconductor packages is achieved in a test measure, and the classification of the semiconductor packages is achieved based on this electrical parameter. In particular, test measures can be used in order to determine the electrical parameters. The classification carried out with the aid of this electrical parameter can enable the use of semiconductor packages or power semiconductors having similar electrical characteristics in a power semiconductor module. Thus, for each power semiconductor module, the selection of the respective semiconductor packages can be achieved based on the acquired electrical parameters. Compared with the prior art, the classification of the semiconductor packages after separating out the individual semiconductor packages is improved because classification before applying the power semiconductors to the respective carrier structures can be avoided. This prior classification causes higher costs due to the complex handling of the individual power semiconductors. In this regard, an efficiency improvement is obtained.

[0074] In a subsequent optional step of packaging S28, individual semiconductor packages can be packaged.

[0075] The present invention has been fully described and explained with the aid of the drawings and the description. The description and explanation should be understood as exemplary and non - restrictive. The present invention is not limited to the disclosed embodiments. For those skilled in the art, other embodiments or variants can be obtained when using the present invention and carefully analyzing the drawings, the disclosure, and the claims.

[0076] In the claims, the terms "comprising" and "having" do not exclude the presence of additional elements or steps. The indefinite article "a" does not exclude the presence of a plurality. A single element or a single unit can perform the functions of several of the units mentioned in the claims. Elements, units, interfaces, devices, and systems can be implemented partially or fully in hardware and / or software. The fact that certain measures are only mentioned in several different dependent claims does not mean that the combination of these measures cannot be used equally advantageously. The reference signs in the claims should not be construed as restrictive.

[0077] Reference signs

[0078] 10 Vehicle

[0079] 12 Traction converter

[0080] 14 Battery

[0081] 16 Electric motor

[0082] 18 Power semiconductor module

[0083] 20 Semiconductor package

[0084] 21 Control unit

[0085] 22 Power semiconductor

[0086] 24 First contact unit

[0087] 26 Second contact unit

[0088] 28 Terminal connection device

[0089] 29 Casting material

[0090] 30 First side

[0091] 32 Second side

[0092] 34 Control terminal

[0093] 36 Sintered connection part

[0094] 38 Another control terminal

[0095] 40 Another terminal connection device

Claims

1. A semiconductor package (20) for a power semiconductor module (18) of a traction converter (12), the semiconductor package comprising: A power semiconductor (22) having a first side (30), an opposing second side (32), and a control terminal (34) on the first side; A first contact unit (24) for contacting the first side, wherein The first contact unit is in planar thermal and electrical contact with a majority of the first side; a second contact unit (26) for contacting the second side, wherein the second contact unit is in planar thermal and electrical contact with a majority of the second side; as well as A terminal connection device (28) is provided for connecting a control terminal of the power semiconductor to a control unit (21).

2. The semiconductor package (20) according to claim 1, wherein: The semiconductor package has at most two power semiconductors (22) and / or is potted with a potting compound (29).

3. The semiconductor package (20) according to any one of the preceding claims, wherein: The first contact unit (24) is configured as a metallization layer, preferably a copper metallization layer, or as a rigid component, preferably a copper block; and / or The second contact unit (26) is designed as a rigid component, preferably as a copper carrier.

4. The semiconductor package (20) according to any one of the preceding claims, wherein: The first contact unit (24) is in flat contact with at least 60%, preferably at least 70%, particularly preferably at least 80% of the first side (30) of the power semiconductor (22); and / or The second contact unit (26) is in flat contact with the entire second side (32) of the power semiconductor.

5. The semiconductor package (20) according to any one of the preceding claims, wherein: The terminal connection device (28) includes a flexible circuit board having conductor tracks.

6. The semiconductor package (20) according to any one of the preceding claims, wherein: A sintered connection (36) is arranged between the first contact unit (24) and the first side (30) of the power semiconductor (22) and / or between the second contact unit (26) and the second side (32) of the power semiconductor.

7. The semiconductor package (20) according to any one of the preceding claims, wherein: The cross-section of the first contact unit (24) parallel to the plane of the power semiconductor (22) is smaller in a region where the first contact unit contacts the first side (30) of the power semiconductor than in a region spaced apart from the contact between the first contact unit and the first side of the power semiconductor; and Preferably, the cross-sectional variation is discontinuous.

8. The semiconductor package (20) according to any one of the preceding claims, wherein: The power semiconductor (22) has a further control terminal (38) on the first side (30); and The terminal connection means (28) is preferably designed for contacting the further control terminal with the control unit (21).

9. The semiconductor package (20) according to any one of the preceding claims, wherein: The semiconductor package does not have a flat insulation unit for electrically insulating a major part of a first side of the power semiconductor (22) and / or a major part of a second side (32) of the power semiconductor.

10. A power semiconductor module (18) for a traction converter (12), the power semiconductor module comprising a plurality of semiconductor packages (20) according to any one of the preceding claims, wherein preferably, a first half of the plurality of semiconductor packages is arranged rotated 180° relative to a second half of the plurality of semiconductor packages, so that a first contact unit (24) of the first half of the plurality of semiconductor packages is oriented in the same direction as a second contact unit (26) of the second half of the plurality of semiconductor packages.

11. A method for producing a plurality of semiconductor packages (20) according to any one of claims 1 to 9, the method comprising the following steps: providing ( S10 ) a carrier structure made of an electrically and thermally conductive material; Applying (S14) a plurality of power semiconductors (22) on the carrier structure, wherein the second sides (32) of the plurality of power semiconductors are in electrical and thermal contact with the carrier structure; separating ( S12 ) the carrier structure to produce a plurality of semiconductor packages each having a maximum of two power semiconductors, preferably one power semiconductor; as well as An electrical parameter of each of the plurality of semiconductor packages is acquired ( S16 ) during the test, and the semiconductor packages are classified based on the parameter.

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