Graphene wafer batch preparation device

Abstract

The invention relates to a graphene wafer batch preparation device which is used for depositing and growing graphene on the surface of a wafer and comprises a furnace body, a carrier, an air inlet flange, a first air uniformizing assembly and a heat blocking assembly, the furnace body is provided with an air inlet end, an air exhaust end and a furnace cavity communicating with the air inlet end and the air exhaust end, and the carrier is arranged in the furnace cavity and used for containing a plurality of wafer substrates; the first gas uniformizing assembly is arranged in the furnace cavity and located between the gas inlet flange and the carrier, the heat blocking assembly is arranged in the furnace cavity and located between the carrier and the gas exhaust end of the furnace body, and the heat blocking assembly is used for increasing the temperature of the portion, close to the gas exhaust end, of the carrier. The gas inlet flange is matched with the first gas uniformizing assembly, so that gas can uniformly flow to the carrier, graphene with good layer number and surface thickness uniformity can be more easily generated, the heat blocking assembly can increase the temperature of the carrier close to the gas exhaust end, carbon source gas is more fully cracked, and the uniformity of the growth thickness of the graphene in the gas flowing direction is ensured.

Description

Technical Field

[0001] This application relates to the technical field of graphene preparation, and particularly to an apparatus for batch preparation of graphene wafers. Background Art

[0002] Currently, the large-scale production of graphene by chemical vapor deposition (CVD) method faces severe challenges. One of the problems is the uneven distribution of reaction gases in the reaction chamber. For example, when traditional CVD equipment is extended to grow graphene on multiple wafers, the uneven distribution of reaction gases will cause the gas concentration at the edge of the reaction chamber to decay, which seriously affects the uniformity of graphene growth. At the same time, as the carbon source gas is cracked and consumed, the concentration of active carbon species near the pumping end is lower than that at the inlet end, resulting in uneven growth thickness of graphene along the flow direction of the carbon source gas. Summary of the Invention

[0003] The purpose of this application is to solve the technical problems that the reaction gases are unevenly distributed in the reaction chamber during the existing graphene preparation, resulting in the decay of gas concentration at the edge of the reaction chamber, which seriously affects the uniformity of graphene growth and the decrease of the concentration of active carbon species, resulting in uneven graphene growth. This purpose is achieved through the following technical solutions:

[0004] This application provides an apparatus for batch preparation of graphene wafers for depositing and growing graphene on the surface of wafers. The apparatus for batch preparation of graphene wafers includes a furnace body, a carrier, an inlet flange, a first gas homogenization component, and a heat insulation component. The furnace body has an inlet end, a pumping end, and a furnace chamber communicating with both the inlet end and the pumping end. The carrier is arranged in the furnace chamber and is used for placing a plurality of wafer substrates. The inlet flange is arranged at the inlet end of the furnace body and is used for uniformly introducing gas into the furnace chamber. The first gas homogenization component is arranged in the furnace chamber and is located between the inlet flange and the carrier. The first gas homogenization component is used for homogenizing the flowing gas. The heat insulation component is arranged in the furnace chamber and is located between the carrier and the pumping end of the furnace body. The heat insulation component is used for increasing the temperature of the carrier near the pumping end.

[0005] When the apparatus for batch preparation of graphene wafers of this application is in use, the carbon source gas uniformly enters the furnace chamber from the inlet flange at the inlet end. The first gas homogenization component homogenizes the flowing carbon source gas, and after mixing evenly, it flows to the carrier for reaction. The uniform reaction gas makes it easier to generate graphene with good uniformity in the number of layers and surface thickness on the wafer substrate. The heat insulation component can increase the temperature of the carrier near the pumping end, increase the cracking degree of the carbon source gas near the pumping end, and increase the content of active carbon species, thereby ensuring the uniformity of the growth thickness of graphene along the gas flow direction.

[0006] In some embodiments, the intake flange includes a flange body, an intake channel, and an intake port. The flange body is disposed at the intake end of the furnace body. The flange body is provided with at least two gas injection ports for injecting at least two different gases into the furnace cavity. The intake channel is formed inside the flange body. The intake channel communicates with the gas injection ports. The intake port extends along the radial direction of the flange body. There are a plurality of intake ports, and the plurality of intake ports are evenly arranged along the circumferential direction of the flange body. The intake ports communicate the intake channel with the central cavity of the flange body.

[0007] In some embodiments, the intake channel includes a first air passage and a second air passage. The first air passage is formed along the circumferential direction of the flange body. The first air passage communicates with the gas injection ports. The second air passage is formed in a fan shape along the circumferential direction of the flange body. There are a plurality of second air passages, and the plurality of second air passages are spaced apart along the circumferential direction of the flange body. The plurality of second air passages communicate with the first air passage. Each second air passage communicates with at least one intake port.

[0008] In some embodiments, the intake flange further includes a cooling water passage. The cooling water passage is disposed on the flange body. The flange body is provided with two water connectors connected to the cooling water passage.

[0009] In some embodiments, the first gas distribution assembly includes a first gas distribution plate and a second gas distribution plate. The first gas distribution plate and the second gas distribution plate are stacked and spaced apart along the gas flow direction. The first gas distribution plate is provided with a plurality of uniformly distributed first holes. The second gas distribution plate is provided with a plurality of uniformly distributed second holes. The first holes and the second holes are staggered along the gas flow direction.

[0010] In some embodiments, the bottom of the first gas distribution plate and the bottom of the second gas distribution plate are provided with correspondingly communicating first mating holes. The first mating holes are used for docking and mating with the transfer assembly to realize the automatic transfer of the first gas distribution assembly and the carrier.

[0011] In some embodiments, the heat shielding assembly includes a plurality of heat shielding plates, and the plurality of heat shielding plates are spaced apart along the gas flow direction.

[0012] In some embodiments, the graphene wafer batch preparation device further includes a second gas distribution assembly. The second gas distribution assembly is disposed between the carrier and the heat shielding assembly.

[0013] In some embodiments, the second gas distribution component includes a third gas distribution plate and a fourth gas distribution plate. The third gas distribution plate and the fourth gas distribution plate are arranged at intervals in a stacked manner along the gas flow direction. The third gas distribution plate is provided with a plurality of uniformly distributed third holes, and the fourth gas distribution plate is provided with a plurality of uniformly distributed fourth holes. The third holes and the fourth holes are arranged in a staggered manner along the gas flow direction.

[0014] In some embodiments, the wafer substrate is vertically placed on the carrier. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present application. Moreover, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0016] Figure 1 is a schematic diagram of the overall structure of a graphene wafer batch preparation device according to an embodiment of the present application;

[0017] Figure 2 is a schematic perspective view of a first gas distribution component according to an embodiment of the present application;

[0018] Figure 3 is a front view of a first gas distribution component according to an embodiment of the present application;

[0019] Figure 4 is a left view of a first gas distribution component according to an embodiment of the present application;

[0020] Figure 5 is a schematic diagram of the structure of a second gas distribution plate in a first gas distribution component according to an embodiment of the present application;

[0021] Figure 6 is a front view of an intake flange according to an embodiment of the present application;

[0022] Figure 7 is a schematic perspective view of an intake flange according to an embodiment of the present application;

[0023] Figure 8 is Figure 7 a partial enlarged schematic view at A in

[0024] Figure 9 is a schematic perspective view of a second gas distribution component according to an embodiment of the present application;

[0025] Figure 10 is a front view of a second gas distribution component according to an embodiment of the present application;

[0026] Figure 11Left view of the second air distribution component according to an embodiment of the present application;

[0027] Figure 12 Schematic structural view of the fourth air distribution disk in the second air distribution component according to an embodiment of the present application;

[0028] Figure 13 Schematic three-dimensional structural view of the heat shielding component according to an embodiment of the present application;

[0029] Figure 14 Front view of the heat shielding component according to an embodiment of the present application.

[0030] Explanation of reference numerals:

[0031] 10. Furnace body; 11. Furnace cavity;

[0032] 20. Carrier;

[0033] 30. First air distribution component; 31. First air distribution disk; 311. First hole; 312. First mating hole; 32. Second air distribution disk; 321. Second hole; 33. First connecting portion;

[0034] 40. Intake flange; 41. Flange body; 411. Gas injection port; 412. Intake channel; 4121. First air passage; 4122. Second air passage; 413. Intake port; 414. Central cavity; 42. Waterway joint;

[0035] 50. Second air distribution component; 51. Third air distribution disk; 511. Third hole; 512. Second mating hole; 52. Fourth air distribution disk; 521. Fourth hole; 53. Second connecting portion;

[0036] 60. Heat shielding component; 61. Heat shielding plate; 62. Third connecting portion; 63. Third mating hole;

[0037] 70. Exhaust flange. Detailed implementation manners

[0038] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be completely conveyed to those skilled in the art.

[0039] It should be understood that the terms used herein are for the purpose of describing specific exemplary embodiments only and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" as used herein may also include the plural forms. The terms "comprising", "including", and "having" are inclusive and thus specify the presence of the stated features, elements, and / or components, but do not preclude the presence or addition of one or more other features, elements, components, and / or combinations thereof.

[0040] In addition, in the description of the present application, unless otherwise clearly specified and limited, the terms "arranged" and "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be directly connected or indirectly connected through an intermediate medium. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0041] For ease of description, spatial relative relationship terms may be used herein to describe the relationship of one element or feature shown in the figure to another element or feature. These relative relationship terms such as "above", "below", "inside", "outside", "end", "side", etc. This spatial relative relationship term is intended to include different orientations of the mechanism in use or operation other than the orientation depicted in the figure. For example, if the mechanism in the figure is flipped, then the element described as "below other elements or features" or "beneath other elements or features" will subsequently be oriented as "above other elements or features" or "over other elements or features". Therefore, the exemplary term "below" can include the orientations of above and below. The mechanism may be oriented otherwise (rotated 90 degrees or in other directions) and the spatial relative relationship descriptors used herein are interpreted accordingly.

[0042] As Figure 1 and Figure 2As shown, according to an embodiment of the present invention, a device for batch preparation of graphene wafers is disclosed, which is used for depositing and growing graphene on the surface of wafers. The device for batch preparation of graphene wafers includes a furnace body 10, a carrier 20, an intake flange 40, a first gas homogenizing component 30 and a heat shielding component 60. Among them, the furnace body 10 has an intake end, an exhaust end and a furnace chamber 11 communicating with both the intake end and the exhaust end. The carrier 20 is arranged in the furnace chamber 11 and is used for placing wafer substrates. The intake flange 40 is arranged at the intake end of the furnace body 10 and is used for uniformly introducing gas into the furnace chamber 11. The first gas homogenizing component 30 is arranged in the furnace chamber 11 and is located between the intake flange 40 and the carrier 20. The first gas homogenizing component 30 is used for making the flowing gas uniform. The heat shielding component 60 is arranged in the furnace chamber 11 and is located between the carrier 20 and the exhaust end of the furnace body 10. The heat shielding component 60 is used for increasing the temperature of the carrier 20 near the exhaust end.

[0043] When the device for batch preparation of graphene wafers of the present application is in use, the carbon source gas enters the furnace chamber 11 uniformly from the intake flange 40 at the intake end. The first gas homogenizing component 30 makes the flowing carbon source gas uniform, and after mixing it evenly, it flows to the carrier 20 for reaction. The uniformity of the reaction gas makes it easier to generate graphene with good uniformity in the number of layers and surface thickness on the wafer substrate. The setting of the heat shielding component 60 can reduce the heat loss of the carrier 20 near the exhaust end, thereby increasing the temperature of the carrier 20 near the exhaust end, increasing the cracking degree of the carbon source gas near the exhaust end, increasing the content of active carbon species, and thus ensuring the uniformity of the graphene growth thickness along the gas flow direction.

[0044] It should be noted here that the heat shielding component 60 of the present application is only arranged on one side of the carrier 20 near the exhaust end, and no heat shielding component 60 is arranged on one side of the carrier 20 near the intake end. In the existing graphene growth equipment, along the gas flow direction, as the reaction progresses, the concentration of the carbon source gas on the side of the carrier 20 near the exhaust end will be lower than that on the side of the carrier 20 near the intake end, resulting in the graphene growth thickness on the side of the carrier 20 near the intake end being greater than that on the side of the carrier 20 near the exhaust end, and the situation of uneven graphene growth thickness occurs. The heat shielding component 60 is arranged on the side of the carrier 20 near the exhaust end in the present application to insulate the side of the carrier 20 near the exhaust end, increase the temperature of the side of the carrier 20 near the exhaust end, make the temperature of the side of the carrier 20 near the exhaust end higher than that of the side of the carrier 20 near the intake end, thereby increasing the cracking degree of the carbon source gas on the side of the carrier 20 near the exhaust end, increasing the content of active carbon species, reducing the concentration difference of active carbon species between the side of the carrier 20 near the exhaust end and the side near the intake end, and thus ensuring the uniformity of the graphene growth thickness along the gas flow direction.

[0045] Such as Figure 1 、 Figures 6 to 8As shown, in some embodiments, the intake flange 40 includes a flange body 41, an intake passage 412, and an intake port 413. Among them, the flange body 41 is disposed at the intake end of the furnace body 10. The flange body 41 is provided with at least two gas injection ports 411 for injecting at least two different gases into the furnace chamber 11. The intake passage 412 is opened inside the flange body 41. The intake passage 412 is communicated with the gas injection ports 411. The intake port 413 extends along the radial direction of the flange body 41. There are multiple intake ports 413, and the multiple intake ports 413 are evenly arranged along the circumferential direction of the flange body 41. The intake port 413 is communicated with the intake passage 412 and the central cavity 414 of the flange body 41, and the central cavity 414 is communicated with the furnace chamber 11.

[0046] In this application, the flange body 41 of the present application adopts a collaborative design of the gas injection port 411, the intake passage 412, and a plurality of intake ports 413 evenly distributed in a circumferential direction for one week, so that the gas is initially mixed in the intake passage 412 after entering from the gas injection port 411, and then slowly diffuses through the plurality of intake ports 413 arranged evenly in the circumferential direction to form a stable diffusing air flow, effectively avoiding local turbulence and improving the air flow distribution uniformity before entering the furnace chamber 11.

[0047] In some embodiments, the intake passage 412 includes a first air passage 4121 and a second air passage 4122. Among them, the first air passage 4121 is opened along the circumferential direction of the flange body 41, and the first air passage 4121 is communicated with the gas injection ports 411. The second air passage 4122 is opened in a fan shape along the circumferential direction of the flange body 41. There are multiple second air passages 4122, and the multiple second air passages 4122 are arranged at intervals along the circumferential direction of the flange body 41. The multiple second air passages 4122 are communicated with the first air passage 4121, and each second air passage 4122 is communicated with at least one intake port 413.

[0048] The first air passage 4121 facilitates the flow of the injected gas. The second air passage 4122 can realize the preliminary shunting of the gas, facilitating the distribution of the gas along each second air passage 4122. The distributed gas flows into the central cavity 414 of the flange body 41 through the intake port 413 and then enters the furnace chamber 11. That is to say, the gas gradually diffuses and flows into the furnace chamber 11 in sequence along the first air passage 4121 → the second air passage 4122 → the intake port 413 → the central cavity 414 of the flange body 41 → the furnace chamber 11, thereby improving the intake uniformity.

[0049] Such as Figure 6 、 Figure 7 、 Figure 8As shown, in this embodiment, there are two gas injection ports 411. One of the gas injection ports 411 is used to inject carbon source gas, and the other gas injection port 411 is used to inject inert gas. The inert gas can prevent the carbon source gas from being oxidized. However, it is not limited to this. For example, in other embodiments, the gas injection port 411 can also be set to three or more according to needs. One of the gas injection ports 411 is used to inject inert gas, and the remaining gas injection ports 411 are all used to inject carbon source gas to improve the gas injection efficiency.

[0050] Specifically, the second air passage 4122 is a non-through fan-shaped section air passage arranged along the circumferential direction of the flange body 41. Eight second air passages 4122 can be arranged at intervals along the circumferential direction of the flange body 41. Each second air passage 4122 communicates with two air inlets 413. A total of sixteen air inlets 413 are evenly distributed in the circumferential direction of the flange body 41 to improve the air intake efficiency. However, it is not limited to this. In other embodiments, the numbers of the second air passage 4122 and the air inlets 413 can both be set according to needs.

[0051] In some embodiments, the intake flange 40 further includes a cooling water passage. The cooling water passage is arranged in the flange body 41, and the flange body 41 is provided with two water connectors 42 connected to the cooling water passage.

[0052] Furthermore, the cooling water passage arranged in the intake flange 40 can cool the intake flange 40, reduce the temperature of the intake flange 40, prevent the temperature at the intake flange 40 from being too high, and ensure the stability of the carbon source gas here.

[0053] Specifically, the cooling water passage can be a cooling cavity opened inside the flange body 41. Coolant is injected into the cooling cavity through one water connector 42, and the coolant in the cooling cavity is returned through the other water connector 42.

[0054] The first air homogenizing component 30 includes a first air homogenizing plate 31 and a second air homogenizing plate 32. Among them, the first air homogenizing plate 31 and the second air homogenizing plate 32 are arranged in a stacked and spaced manner along the gas flow direction. The first air homogenizing plate 31 is provided with a plurality of first holes 311 evenly distributed, and the second air homogenizing plate 32 is provided with a plurality of second holes 321 evenly distributed. The first holes 311 and the second holes 321 are arranged staggeredly along the gas flow direction.

[0055] When the gas flows through the first gas homogenizing component 30, it first passes through multiple first holes 311 of the first gas homogenizing disk 31 to achieve preliminary mixing and uniform flow of the gas. Since the first holes 311 and the second holes 321 are arranged staggeredly along the gas flow direction, when the gas flows toward the second holes 321 of the second gas homogenizing disk 32, its direction changes, which is conducive to gas disturbance and mixing, and further improves the gas mixing uniformity. The first gas homogenizing component 30 of the present application adopts a staggered arrangement of the first holes 311 and the second holes 321. Through this structure, the air flow generates a flow deflection and mixing when passing through the first gas homogenizing disk 31 and the second gas homogenizing disk 32, so that the gas is more evenly distributed inside the furnace cavity 11, which is beneficial to generating graphene with good uniformity in the number of layers and surface thickness, and reduces the difference in graphene growth uniformity among several wafer substrates.

[0056] The present application does not limit the shapes of the first gas homogenizing disk 31 and the second gas homogenizing disk 32. The shapes of the first gas homogenizing disk 31 and the second gas homogenizing disk 32 can match the cross-sectional shape of the furnace cavity 11. For example, if the cross-section of the furnace cavity 11 is circular, the first gas homogenizing disk 31 and the second gas homogenizing disk 32 can be set to be circular. At this time, multiple first holes 311 are evenly distributed along the surface of the circular first gas homogenizing disk 31, and multiple second holes 321 are evenly distributed along the surface of the circular second gas homogenizing disk 32.

[0057] As Figure 2 and Figure 3 shown, the present application does not limit the numbers of the first gas homogenizing disk 31 and the second gas homogenizing disk 32, and they can be set according to needs. In this embodiment, two first gas homogenizing disks 31 and two second gas homogenizing disks 32 are respectively provided and arranged in a stacked and spaced manner, which can make the air flow generate three flow deflections and mixings, but it is not limited to this.

[0058] As Figures 2 to 5 shown, in some embodiments, the first gas homogenizing component 30 further includes a first connecting portion 33, and the first connecting portion 33 is connected to both the first gas homogenizing disk 31 and the second gas homogenizing disk 32.

[0059] The provided first connecting portion 33 can connect the first gas homogenizing disk 31 and the second gas homogenizing disk 32 to ensure the connection reliability between the first gas homogenizing disk 31 and the second gas homogenizing disk 32.

[0060] In some embodiments, there are multiple first connecting portions 33. One of the first connecting portions 33 is arranged at the centers of the first gas homogenizing disk 31 and the second gas homogenizing disk 32, and the remaining first connecting portions 33 are arranged at intervals along the circumferential direction of the central first connecting portion 33.

[0061] The arrangement of multiple first connecting portions 33 realizes the connection of the central parts and the peripheries of the first gas homogenizing disk 31 and the second gas homogenizing disk 32, and improves the connection reliability between the first gas homogenizing disk 31 and the second gas homogenizing disk 32.

[0062] AsFigure 4 and Figure 5 As shown in Figure 5 , in this embodiment, there are six first connecting parts 33. One first connecting part 33 is arranged at the centers of the first air distribution plate 31 and the second air distribution plate 32. Three first connecting parts 33 are evenly distributed along the circumferential direction of the central first connecting part 33. The remaining two first connecting parts 33 are arranged on both sides of the bottoms of the first air distribution plate 31 and the second air distribution plate 32, so as to ensure the connection stability at various positions between the first air distribution plate 31 and the second air distribution plate 32. However, it is not limited thereto. In other embodiments, the number of the first connecting parts 33 can be adjusted as needed.

[0063] Specifically, the first connecting part 33 is a hollow tube, which can not only realize connection but also reduce weight. The first connecting part 33 can be connected and fixed to the first air distribution plate 31 and the second air distribution plate 32 by welding (but not limited thereto).

[0064] such as Figure 1 As shown in Figure 1 , in some embodiments, there are at least two first air distribution assemblies 30. At least one first air distribution assembly 30 is arranged close to the carrier 20, and at least one first air distribution assembly 30 is arranged close to the air inlet end.

[0065] Arranging at least two first air distribution assemblies 30, with at least one first air distribution assembly 30 arranged close to the carrier 20 and at least one first air distribution assembly 30 arranged close to the air inlet end. On the one hand, it can improve the mixing uniformity of the gas flowing to the carrier 20 and avoid the situation that the uniformly mixed gas becomes non-uniform again due to the first air distribution assembly 30 being too far away from the carrier 20. On the other hand, the first air distribution assembly 30 arranged close to the carrier 20 can intercept the reaction gas at the carrier 20, reduce the situation of its reflux to the air inlet end, and ensure the full reaction of the gas and the wafer substrate.

[0066] In this embodiment, there are two first air distribution assemblies 30. One first air distribution assembly 30 is arranged close to the carrier 20, and one first air distribution assembly 30 is arranged close to the air inlet end. However, it is not limited thereto. In other embodiments, the first air distribution assembly 30 can be set to three or four according to the distance between the air inlet end and the carrier 20, etc.

[0067] such as Figure 4 and Figure 5 As shown in Figure 4 and Figure 5 , in some embodiments, corresponding and communicating first mating holes 312 are arranged at the bottoms of the first air distribution plate 31 and the second air distribution plate 32. The first mating holes 312 are used for docking and mating with the transfer assembly to realize the automatic transfer of the first air distribution assembly 30 and the carrier 20.

[0068] The first air distribution plate 31 and the second air distribution plate 32 are provided with first mating holes 312 at the bottom, which can facilitate the cooperation with the transfer assembly, facilitate the placement and removal of the first air distribution assembly 30, and do not prevent the transfer assembly from quickly transferring the wafer substrate and the carrier 20. This design not only ensures the uniform distribution of gas but also perfectly matches the requirements of the automated production line, enabling the equipment to significantly improve production efficiency and operation convenience while maintaining excellent process performance.

[0069] It should be noted that the transfer assembly includes a transfer rod, and the transfer rod can be docked with the first mating hole 312. The first air distribution assembly 30 can be placed or removed from the furnace chamber 11 through the transfer rod. Since the transfer assembly is a prior art, it will not be elaborated in this embodiment.

[0070] Specifically, to ensure the stability of the transfer, two first mating holes 312 are provided, which are arranged on both sides of the bottom of the first air distribution plate 31 and the second air distribution plate 32.

[0071] Through the settings of the intake flange 40 and the first air distribution assembly 30 in this application, the uniformity of gas intake and flow is ensured, so that the gas flows more uniformly to the carrier 20 and reacts uniformly with the wafer substrate on the carrier 20, which is more conducive to the uniform growth of graphene.

[0072] It can be understood that there is a mating gap between the heat shield assembly 60 and the cavity wall of the furnace chamber 11, and the gas can flow to the exhaust end through the mating gap to achieve exhaust.

[0073] Such as Figure 13 and Figure 14 As shown, in some embodiments, the heat shield assembly 60 includes a plurality of heat shield plates 61, and the plurality of heat shield plates 61 are arranged at intervals along the gas flow direction.

[0074] The plurality of heat shield plates 61 arranged at intervals along the gas flow direction can enhance the heat insulation effect, thereby reducing the heat loss of the reaction at the carrier 20 and increasing the reaction temperature.

[0075] Specifically, the heat shield plate 61 can be made of a high-reflectivity metal material, which can effectively block the heat radiation loss of the carrier 20 near the exhaust end, increase the reaction temperature, and further increase the cracking degree of the carbon source gas near the exhaust end, increasing the content of active carbon species; through this setting, the reduction in the amount of active carbon species caused by the consumption of the front-end carbon source gas is compensated, thereby ensuring the uniformity of the graphene growth thickness along the gas flow direction.

[0076] This application does not limit the shape of the heat shield plate 61, and the shape of the heat shield plate 61 can match the cross-sectional shape of the furnace chamber 11. For example, if the cross-section of the furnace chamber 11 is circular, the heat shield plate 61 can be set as circular.

[0077] The present application does not limit the number of heat shields 61, and can be set as needed. In this embodiment, four heat shields 61 are arranged at intervals, but the present invention is not limited thereto.

[0078] In some embodiments, the heat shield assembly 60 further includes a third connection portion 62 , and the third connection portion 62 is connected to the plurality of heat shield plates 61 .

[0079] The third connecting portion 62 can connect a plurality of heat shielding plates 61 that are spaced apart from each other, thereby ensuring the connection reliability between the heat shielding plates 61 .

[0080] To ensure connection stability, in this embodiment, a plurality of third connection portions 62 are provided, wherein one third connection portion 62 is disposed at the center of the heat shield 61 , and the remaining third connection portions 62 are disposed at intervals along the circumference of the central third connection portion 62 .

[0081] In the present embodiment, four third connection parts 62 are provided, one third connection part 62 is arranged at the center of the heat shield 61, and the three third connection parts 62 are evenly distributed along the circumference of the central third connection part 62, so as to ensure the connection stability at various locations between the heat shields 61, but it is not limited to this. In other embodiments, the number of third connection parts 62 can be adjusted as needed.

[0082] Specifically, the third connection portion 62 may be a connection pipe, which can achieve connection and reduce weight. The third connection portion 62 may be connected and fixed to the heat shield 61 by welding (but not limited thereto).

[0083] Optionally, a correspondingly connected third mating hole 63 is provided at the bottom of the heat shield plate 61, and the third mating hole 63 can cooperate with an external tool (such as a hook) to facilitate the removal of the heat shield assembly 60 from the furnace cavity 11 or the placement of the heat shield assembly 60 in the furnace cavity 11.

[0084] like Figure 1 As shown, in some embodiments, the graphene wafer batch preparation device further includes a second gas homogenizing component 50, and the second gas homogenizing component 50 is disposed between the carrier 20 and the gas extraction end.

[0085] The second gas homogenizing assembly 50 is provided so that the reacted gas can flow evenly to the exhaust end for discharge, so that the gas can flow out of the furnace chamber 11 more smoothly and evenly, reducing the gas disturbance downstream of the carrier 20, and further ensuring the uniformity of graphene growth on the wafer substrate.

[0086] like Figures 9 to 12As shown, in some embodiments, the second gas distribution component 50 includes a third gas distribution disk 51 and a fourth gas distribution disk 52. Among them, the third gas distribution disk 51 and the fourth gas distribution disk 52 are stacked and spaced along the gas flow direction. The third gas distribution disk 51 is provided with a plurality of uniformly distributed third holes 511, and the fourth gas distribution disk 52 is provided with a plurality of uniformly distributed fourth holes 521. The third holes 511 and the fourth holes 521 are arranged staggeredly along the gas flow direction.

[0087] When flowing through the second gas distribution component 50, the gas first flows through the plurality of third holes 511 of the third gas distribution disk 51 to achieve uniform gas flow. Since the third holes 511 and the fourth holes 521 are arranged staggeredly along the gas flow direction, when the gas flows to the fourth holes 521 of the fourth gas distribution disk 52, the direction changes, which is conducive to gas disturbance and mixing, and improves the uniformity of gas mixing.

[0088] It can be understood that the setting of the second gas distribution component 50 enables part of the gas flowing back from the air extraction end to the carrier 20 to flow through the second gas distribution component 50 first and then flow to the carrier 20, which can reduce gas backflow and ensure that the backflow gas flows uniformly to the carrier 20, further improving the uniformity of graphene growth.

[0089] This application does not limit the shapes of the third gas distribution disk 51 and the fourth gas distribution disk 52. The shapes of the third gas distribution disk 51 and the fourth gas distribution disk 52 can match the cross-sectional shape of the furnace cavity 11. For example, if the cross-section of the furnace cavity 11 is circular, the third gas distribution disk 51 and the fourth gas distribution disk 52 can be set as circular. At this time, the plurality of third holes 511 are uniformly distributed on the surface of the circular third gas distribution disk 51, and the plurality of fourth holes 521 are uniformly distributed on the surface of the circular fourth gas distribution disk 52.

[0090] This application does not limit the numbers of the third gas distribution disk 51 and the fourth gas distribution disk 52, which can be set as needed. In this embodiment, two third gas distribution disks 51 and two fourth gas distribution disks 52 are respectively provided and arranged alternately at intervals, but it is not limited thereto.

[0091] In some embodiments, the second gas distribution component 50 further includes a second connecting portion 53, and the second connecting portion 53 is connected to both the third gas distribution disk 51 and the fourth gas distribution disk 52.

[0092] The provided second connecting portion 53 can connect the third gas distribution disk 51 and the fourth gas distribution disk 52 to ensure the connection reliability between the third gas distribution disk 51 and the fourth gas distribution disk 52.

[0093] To ensure connection stability, in this embodiment, a plurality of second connecting portions 53 are provided. One of the second connecting portions 53 is arranged at the centers of the third gas distribution disk 51 and the fourth gas distribution disk 52, and the remaining second connecting portions 53 are arranged at intervals along the circumference of the second connecting portion 53 at the center.

[0094] The provision of multiple second connecting portions 53 realizes the connection of the central portions and the peripheries of the third gas distribution plate 51 and the fourth gas distribution plate 52, improving the connection reliability between the third gas distribution plate 51 and the fourth gas distribution plate 52.

[0095] In this embodiment, there are four second connecting portions 53. One second connecting portion 53 is arranged at the center of the third gas distribution plate 51 and the fourth gas distribution plate 52, and the three second connecting portions 53 are evenly distributed along the circumferential direction of the second connecting portion 53 at the center, thereby ensuring the connection stability at various positions between the third gas distribution plate 51 and the fourth gas distribution plate 52. However, it is not limited thereto. In other embodiments, the number of the second connecting portions 53 can be adjusted as needed.

[0096] Specifically, the second connecting portion 53 is a connecting pipe, which can not only realize the connection but also reduce the weight. The second connecting portion 53 can be connected and fixed to the third gas distribution plate 51 and the fourth gas distribution plate 52 by welding (but not limited thereto).

[0097] Optionally, corresponding second mating holes 512 are provided at the bottoms of the third gas distribution plate 51 and the fourth gas distribution plate 52. The second mating holes 512 can cooperate with an external tool (such as a hook), so as to facilitate the removal of the second gas distribution assembly 50 from the furnace cavity 11 or the placement of the second gas distribution assembly 50 in the furnace cavity 11.

[0098] The first gas distribution assembly 30, the second gas distribution assembly 50, and the heat shielding assembly 60 adopt a modular assembly method. Each functional layer can be independently disassembled and maintained, while maintaining compatibility with the automated production system, optimizing the equipment maintenance efficiency while improving the process quality.

[0099] In this embodiment, the heat shielding assembly 60 is arranged between the second gas distribution assembly 50 and the air extraction end. The gas passes through the second gas distribution assembly 50 and flows to the air extraction end through the mating gap between the heat shielding plate 61 and the cavity wall of the furnace cavity 11. Through the provision of the second gas distribution assembly 50 and the integration of the heat shielding assembly 60 at the tail end of the furnace cavity 11 in this application, the heat dissipation of the carrier 20 near the air extraction end can be effectively blocked, and the temperature is maintained slightly higher than that at the air inlet end. This design not only ensures the uniformity of gas discharge but also realizes the precise control of the process temperature through passive thermal management.

[0100] In some embodiments, the wafer substrate is placed vertically on the carrier 20.

[0101] Compared with the horizontal placement of the wafer substrate, the wafer substrate placed vertically on the carrier 20 can better contact the incoming gas, increasing the reaction contact area between the wafer substrate and the gas, and making the reaction between the gas and the wafer substrate more sufficient.

[0102] Specifically, the wafer substrate can be fixed to the carrier 20 by a clamping method, which is convenient for disassembly and assembly. However, it is not limited thereto. The wafer substrate can also be fixed to the carrier 20 by other means.

[0103] In addition to the above settings, the graphene wafer batch preparation device of this embodiment further includes an air extraction flange 70. The air extraction flange 70 is arranged at the air extraction end and is used to extract vacuum into the furnace chamber 11, facilitating the outflow of the gas after the reaction in the furnace chamber 11 from the furnace chamber 11.

[0104] In summary, through the collaborative design of diffused air intake through the air intake flange, dynamic gas uniformity of the first gas uniforming component 30, vertical setting of the wafer substrate on the carrier 20 to increase the reaction area, uniform outflow of gas by the second gas uniforming component 50 and improvement of the uniformity of the reflux gas, and heat insulation of the heat shielding component 60 to increase the reaction temperature, the present invention realizes the optimization of the three-dimensional dynamic flow field in the furnace chamber 11, reduces the difference in the growth uniformity of graphene between and inside the wafer substrates, and improves the utilization rate of the reaction gas at the same time.

[0105] The above is only a preferred specific embodiment of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed in the present application should be covered within the protection scope of the present application.

Claims

1. A graphene wafer batch preparation device, used for depositing and growing graphene on the surface of a wafer, characterized in that: The graphene wafer batch preparation device comprises: A furnace body (10) having an air inlet end, an air exhaust end, and a furnace chamber (11) connected to the air inlet end and the air exhaust end; A carrier (20) is arranged in the furnace chamber (11), and the carrier (20) is used to place a plurality of wafer substrates; An air intake flange (40) is arranged at the air intake end of the furnace body (10), and the air intake flange (40) is used to uniformly intake air into the furnace cavity (11); A first gas equalizing component (30) is arranged in the furnace chamber (11), the first gas equalizing component (30) is located between the gas inlet flange (40) and the carrier (20), and the first gas equalizing component (30) is used to equalize the flow of gas passing through; A heat shield component (60) is arranged in the furnace cavity (11), the heat shield component (60) is located between the carrier (20) and the exhaust end of the furnace body (10), and the heat shield component (60) is used to increase the temperature of the carrier (20) close to the exhaust end.

2. The graphene wafer batch preparation device according to claim 1, characterized in that: The air inlet flange (40) comprises: A flange body (41) is arranged at the gas inlet end of the furnace body (10), and the flange body (41) is provided with at least two gas injection ports (411) for injecting at least two different gases into the furnace cavity (11); An air inlet channel (412) is provided inside the flange body (41), and the air inlet channel (412) is communicated with the air injection port (411); An air inlet (413) extends radially along the flange body (41), a plurality of the air inlets (413) are provided and the plurality of the air inlets (413) are evenly arranged along the circumference of the flange body (41), and the air inlet (413) connects the air inlet channel (412) and the central cavity (414) of the flange body (41).

3. The graphene wafer batch preparation device according to claim 2, characterized in that: The air intake passage (412) comprises: A first air channel (4121) is opened along the circumference of the flange body (41), and the first air channel (4121) is connected to the air injection port (411); The second air duct (4122) is opened in a fan shape along the circumference of the flange body (41), and the second air duct (4122) is provided with a plurality of second air ducts (4122) and the plurality of second air ducts (4122) are arranged at intervals along the circumference of the flange body (41), and the plurality of second air ducts (4122) are connected to the first air duct (4121), and each second air duct (4122) is connected to at least one of the air inlets (413).

4. The graphene wafer batch preparation device according to claim 2, characterized in that: The air intake flange (40) further comprises a cooling water circuit, wherein the cooling water circuit is arranged on the flange body (41), and the flange body (41) is provided with two water circuit joints (42) connected to the cooling water circuit.

5. The graphene wafer batch preparation device according to any one of claims 1 to 4, characterized in that: The first gas uniformizing component (30) comprises a first gas uniformizing disk (31) and a second gas uniformizing disk (32); the first gas uniformizing disk (31) and the second gas uniformizing disk (32) are sequentially stacked and spaced along a gas flow direction; the first gas uniformizing disk (31) is provided with a plurality of evenly distributed first holes (311); the second gas uniformizing disk (32) is provided with a plurality of evenly distributed second holes (321); the first holes (311) and the second holes (321) are staggered along the gas flow direction.

6. The graphene wafer batch preparation device according to claim 5, characterized in that: The bottom of the first gas equalizing disk (31) and the bottom of the second gas equalizing disk (32) are provided with correspondingly connected first matching holes (312), and the first matching holes (312) are used to dock with the transmission component to realize automatic transmission of the first gas equalizing component (30) and the carrier (20).

7. The graphene wafer batch preparation device according to any one of claims 1 to 4, characterized in that: The heat shield assembly (60) comprises a plurality of heat shield plates (61), and the plurality of heat shield plates (61) are arranged at intervals along the gas flow direction.

8. The graphene wafer batch preparation device according to any one of claims 1 to 4, characterized in that: The graphene wafer batch preparation device further comprises a second gas homogenizing component (50), wherein the second gas homogenizing component (50) is arranged between the carrier (20) and the heat shielding component (60).

9. The graphene wafer batch preparation device according to claim 8, characterized in that: The second gas uniformizing component (50) comprises a third gas uniformizing disk (51) and a fourth gas uniformizing disk (52), wherein the third gas uniformizing disk (51) and the fourth gas uniformizing disk (52) are sequentially stacked and spaced apart along a gas flow direction, the third gas uniformizing disk (51) is provided with a plurality of evenly distributed third holes (511), the fourth gas uniformizing disk (52) is provided with a plurality of evenly distributed fourth holes (521), and the third holes (511) and the fourth holes (521) are staggered along the gas flow direction.

10. The graphene wafer batch preparation device according to any one of claims 1 to 4, characterized in that: The wafer substrate is placed vertically on the carrier (20).

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