Seed crystal circle selection method and system
Screening of silicon carbide seed wafers with the lowest stress through image analysis methods solves the problem of difficulty in screening high-quality seed wafers in the prior art, and improves the yield of crystal growth and the reliability of wafers.
Patent Information
- Application Number
- CN202510468081.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-10-30
- Filing Date
- 2025-04-15
- Publication Date
- 2025-06-27
AI Technical Summary
The prior art is difficult to screen high-quality silicon carbide seed wafers, resulting in low crystal growth yield.
The analysis data of the seed wafer and the grown crystal image were obtained by image analysis method, and the deformation between the two was compared, and the seed wafer with the lowest stress was selected for crystal growth.
It improves the yield of crystal growth, reduces the stress in the wafer, improves the reliability of the wafer and the quality of the final product.
Smart Images
Figure CN120210944A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of seed wafer selection, and particularly to a method and a system for selecting a seed wafer. Background Art
[0002] To solve the problem that the quality of silicon carbide seed wafers used as seeds during the growth of silicon carbide crystals by the existing physical vapor transport method (PVT) varies and it is difficult to screen them. The processing of silicon carbide seed wafers requires processes such as cutting, grinding, and polishing. Parameters such as the size of abrasive particles, processing pressure, removal amount, removal time, and the relative motion mode during processing will all cause the residual of processing stress in the wafer. These stresses often need to be measured, identified, and removed by adopting an appropriate combination of processing techniques.
[0003] The disadvantages of the existing technology are that it is impossible to measure the residual stress in the seed wafer, including the original stress existing during the growth of the source crystal and the mechanical stress generated during the mechanical processing (cutting, grinding, polishing) process. Residual stress represents an irregular atomic arrangement, short-range or long-range disorder. During crystal growth, when atoms are deposited one by one at the atomic scale, it will continue the irregular atomic arrangement on the surface of the seed wafer and further extend to the new crystal growth region.
[0004] The quality of silicon carbide seed wafers used as seeds during the growth of silicon carbide crystals by the existing methods varies, and it is difficult to screen high-quality seed wafers, which becomes a problem. It is necessary to design a method for selecting high-quality seed wafers to improve the yield of crystal growth. Summary of the Invention
[0005] Therefore, the technical problem to be solved by the present invention is to overcome the difficulty in screening high-quality seed wafers in the prior art.
[0006] To solve the above technical problem, the present invention provides a method for selecting a seed wafer, including: Step S1: Obtain a first image corresponding to a first seed wafer and a second image corresponding to a second seed wafer, and obtain the analysis data of the first image and the second image. Among them, the first seed wafer and the second seed wafer are taken from the same ingot and have deformations caused by residual stress; Step S2: Perform crystal growth on the first seed wafer and the second seed wafer to obtain a first crystal of the first seed wafer and a second crystal of the second seed wafer. Among them, the first crystal and the second crystal are deformed due to the influence of mechanical stress and thermal stress during the growth process; Step S3: Obtain a first crystal image corresponding to the first crystal and a second crystal image corresponding to the second crystal, and obtain the analysis data of the first crystal image and the second crystal image; Step S4: Compare the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
[0007] In an embodiment of the present invention, the method for obtaining the analysis data of the first image and the second image in step S1 includes: Perform gray-scale processing on the first image and the second image to obtain a first gray-scale image and a second gray-scale image; Set comparison pixels. For the first gray-scale image and the second gray-scale image, retain the positions higher than the comparison pixels and remove the positions lower than the comparison pixels to obtain a first speckle image and a second speckle image corresponding to the first gray-scale image and the second gray-scale image; Obtain the area of each connected domain in the first speckle image and the second speckle image, and obtain the positions of the geometric center points of the connected domains of the first speckle image and the second speckle image after denoising, where the geometric center point is the center point of the longest length of the area where the connected domain is located.
[0008] In an embodiment of the present invention, count the number of connected domains in the first speckle image and the second speckle image whose area exceeds a first preset area. If the number is greater than or equal to a first preset number, it indicates that the first seed wafer corresponding to the first speckle image or the second seed wafer corresponding to the second speckle image is unqualified and the selection is abandoned; if the number is less than the first preset number, continue to judge the distance between the geometric center points of the connected domains; If the distance between the geometric center points of adjacent connected domains in the first speckle image or the second speckle image is less than a preset length, record it. When the number of records is greater than or equal to a preset number, judge that the first seed wafer corresponding to the first speckle image or the second seed wafer corresponding to the second speckle image is unqualified and abandon the unqualified first seed wafer or second seed wafer, and select a seed wafer again; when the number of records is less than the preset number, judge that the first seed wafer corresponding to the first speckle image or the second seed wafer corresponding to the second speckle image is qualified and use it as an alternative seed wafer.
[0009] In an embodiment of the present invention, the method for obtaining the analysis data of the first crystal image and the second crystal image in step S3 includes: Perform gray-scale processing on the first crystal image and the second crystal image to obtain a first crystal gray-scale image and a second crystal gray-scale image; For the first crystal gray-scale image and the second crystal gray-scale image, retain the positions higher than the comparison pixels and remove the positions lower than the comparison pixels to obtain a first crystal speckle image and a second crystal speckle image corresponding to the first crystal gray-scale image and the second crystal gray-scale image; Obtain the area of each connected component in the first crystal speckle image and the second crystal speckle image after denoising, and obtain the number of connected components in the first crystal speckle image and the second crystal speckle image after denoising respectively.
[0010] In an embodiment of the present invention, count the number of connected components in the first crystal speckle image and the second crystal speckle image whose area exceeds a second preset area. If the number is greater than or equal to a second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified, and the selection is abandoned; if the number is less than the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified, and then continue to judge the number of connected components of the seed crystal wafer. If the number of connected components in the first crystal speckle image or the second crystal speckle image is greater than a third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified, and the selection is abandoned; if the number of connected components in the first crystal speckle image or the second crystal speckle image is less than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified and can be selected.
[0011] In an embodiment of the present invention, if the deformation of the first seed crystal wafer caused by residual stress is less than that of the second seed crystal wafer, then the deformation of the first crystal caused by the influence of mechanical stress and thermal stress during the growth process is less than that of the second crystal. If the deformation of the first seed crystal wafer caused by residual stress is greater than that of the second seed crystal wafer, then the deformation of the first crystal caused by the influence of mechanical stress and thermal stress during the growth process is greater than that of the second crystal.
[0012] In an embodiment of the present invention, perform filtering processing on the first speckle image and the second speckle image, and retain the connected components formed by at least 3 pixels to remove noise; at the same time, perform filtering processing on the first crystal speckle image and the second crystal speckle image, and retain the connected components formed by at least 3 pixels to remove noise.
[0013] To solve the above technical problems, the present invention provides a seed crystal wafer selection system, including: The first acquisition module: used to acquire the first image corresponding to the first seed crystal wafer and the second image corresponding to the second seed crystal wafer, and acquire the analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken from the same ingot and have deformations caused by residual stress. Growth module: used for crystal growth of the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer. During the growth process, the first crystal and the second crystal are deformed due to the influence of mechanical stress and thermal stress; Second acquisition module: used for acquiring a first crystal image corresponding to the first crystal and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Comparison and selection module: used for comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed crystal wafer.
[0014] To solve the above technical problems, the present invention provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the computer program, the steps of the above seed crystal wafer selection method are implemented.
[0015] To solve the above technical problems, the present invention provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the above seed crystal wafer selection method are implemented.
[0016] The above technical solutions of the present invention have the following advantages compared with the prior art: The present invention measures and screens the stress in the silicon carbide seed crystal wafer through an image analysis method, and selects the silicon carbide seed crystal wafer with the lowest stress for crystal growth, further improving the crystal growth yield. Through this method, the quality control of the wafer can be carried out before crystal growth, thereby improving the quality and performance of the final product. The present invention optimizes the processing technology of the wafer, reduces internal stress, and improves the reliability of the wafer; The present invention discovers that the smaller / larger the residual stress of the seed crystal wafer, the smaller / larger the stress of the corresponding crystal after growth. This indicates that during the crystal growth process, lower initial stress helps to obtain higher-quality crystals, which can reduce production costs and improve production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to make the content of the present invention easier to be clearly understood, the following further details the present invention according to specific embodiments of the present invention in conjunction with the drawings.
[0018] Figure 1 is the method flow chart of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0019] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and be able to implement it, but the embodiments cited do not limit the present invention. Embodiment 1
[0020] Referring to Figure 1 As shown, the present invention relates to a method for selecting a seed crystal wafer, including: Step S1: Obtain a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and obtain analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken from the same ingot and have deformations caused by residual stress; Step S2: Perform crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed due to the influence of mechanical stress and thermal stress during the growth process; Step S3: Obtain a first crystal image corresponding to the first crystal and a second crystal image corresponding to the second crystal, and obtain analysis data of the first crystal image and the second crystal image; Step S4: Compare the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed crystal wafer.
[0021] Further, in step S1, the method for obtaining the analysis data of the first image and the second image includes: Perform gray processing on the first image and the second image to obtain a first gray image and a second gray image; Set comparison pixels. For the first gray image and the second gray image, retain the positions higher than the comparison pixels and remove the positions lower than the comparison pixels to obtain a first speckle image and a second speckle image corresponding to the first gray image and the second gray image; Obtain the area of each connected domain in the first speckle image and the second speckle image, and obtain the positions of the geometric center points of the connected domains of the first speckle image and the second speckle image after denoising, wherein the geometric center point is the center point of the longest length of the area where the connected domain is located.
[0022] Further, count the number of connected domains in the first speckle image and the second speckle image whose area exceeds a first preset area. If the number is greater than or equal to a first preset number, it indicates that the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is unqualified and the selection is abandoned; if the number is less than the first preset number, continue to judge the distance between the geometric center points of the connected domains; If the distance between the geometric center points of adjacent connected regions in the first speckle image or the second speckle image is less than a preset length, record it. When the number of records is greater than or equal to the preset number, it is determined that the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is unqualified, and the unqualified first seed crystal wafer or second seed crystal wafer is abandoned, and a seed crystal wafer is selected again; when the number of records is less than the preset number, it is determined that the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is qualified and used as an alternative seed crystal wafer.
[0023] Further, the method for obtaining the analysis data of the first crystal image and the second crystal image in step S3 includes: Perform gray-scale processing on the first crystal image and the second crystal image to obtain a first crystal gray-scale image and a second crystal gray-scale image; For the first crystal gray-scale image and the second crystal gray-scale image, retain the positions higher than the comparison pixel and remove the positions lower than the comparison pixel to obtain a first crystal speckle image and a second crystal speckle image corresponding to the first crystal gray-scale image and the second crystal gray-scale image; Obtain the area of each connected region in the first crystal speckle image and the second crystal speckle image after denoising, and obtain the number of connected regions of the first crystal speckle image and the second crystal speckle image after denoising respectively.
[0024] Further, count the number of connected regions in the first crystal speckle image and the second crystal speckle image whose area exceeds a second preset area. If the number is greater than or equal to the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified and the selection is abandoned; if the number is less than the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified, and then continue to judge the number of connected regions of the seed crystal wafer; If the number of connected regions in the first crystal speckle image or the second crystal speckle image is greater than a third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified and the selection is abandoned; if the number of connected regions in the first crystal speckle image or the second crystal speckle image is less than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified and can be selected.
[0025] Further, if the deformation of the first seed crystal wafer caused by residual stress is less than that of the second seed crystal wafer, the deformation of the first crystal during growth due to the influence of mechanical stress and thermal stress is less than that of the second crystal; if the deformation of the first seed crystal wafer caused by residual stress is greater than that of the second seed crystal wafer, the deformation of the first crystal during growth due to the influence of mechanical stress and thermal stress is greater than that of the second crystal. It should be noted that according to the experimental results of this embodiment, seed crystal wafers with relatively small residual stress are usually selected in actual production.
[0026] Further, perform filtering processing on the first speckle image and the second speckle image, and retain the connected domains formed by at least 3 pixels to remove noise; at the same time, perform filtering processing on the first crystal speckle image and the second crystal speckle image, and retain the connected domains formed by at least 3 pixels to remove noise. Embodiment 2
[0027] This embodiment provides a seed crystal wafer selection system, including: The first acquisition module: used to acquire the first image corresponding to the first seed crystal wafer and the second image corresponding to the second seed crystal wafer, and acquire the analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken from the same ingot and have deformations caused by residual stress; The growth module: used to perform crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain the first crystal of the first seed crystal wafer and the second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed due to the influence of mechanical stress and thermal stress during growth; The second acquisition module: used to acquire the first crystal image corresponding to the first crystal and the second crystal image corresponding to the second crystal, and acquire the analysis data of the first crystal image and the second crystal image; The comparison and selection module: used to compare the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed crystal wafer. Embodiment 3
[0028] This embodiment provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the computer program, the steps of the seed crystal wafer selection method described in Embodiment 1 are implemented. Embodiment 4
[0029] This embodiment provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the seed crystal wafer selection method described in Embodiment 1 are implemented.
[0030] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system, or a computer program product. Therefore, the present application can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code. The solutions in the embodiments of the present application can be implemented in various computer languages. For example, object-oriented programming languages such as Java and interpreted scripting languages such as JavaScript, etc.
[0031] The present application is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to the embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram, as well as the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate means for implementing the functions specified in one Figure 1 flow or multiple flows and / or blocks Figure 1 block or multiple blocks.
[0032] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing devices to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including instruction means, and the instruction means implement the functions specified in one Figure 1 flow or multiple flows and / or blocks Figure 1 block or multiple blocks.
[0033] These computer program instructions can also be loaded onto a computer or other programmable data processing devices, so that a series of operation steps are executed on the computer or other programmable devices to generate a computer-implemented process. Thus, the instructions executed on the computer or other programmable devices provide steps for implementing the functions specified in one Figure 1 flow or multiple flows and / or blocks Figure 1 block or multiple blocks.
[0034] Although the preferred embodiments of the present application have been described, those skilled in the art can make additional changes and modifications once they learn the basic creative concepts. Therefore, the appended claims are intended to be construed to include the preferred embodiments and all changes and modifications falling within the scope of the present application.
[0035] Obviously, the above embodiments are merely examples given for clear illustration and are not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to enumerate all implementation manners here. And the obvious changes or modifications derived therefrom still fall within the protection scope of the present invention.
Claims
1. A seed wafer selection method, characterized in that: include: Step S1: obtaining a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and obtaining analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; Step S2: performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; Step S3: acquiring a first crystal image corresponding to the first crystal and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Step S4: comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
2. The seed wafer selection method according to claim 1, characterized in that: The method for obtaining the analysis data of the first image and the second image in step S1 includes: Performing grayscale processing on the first image and the second image to obtain a first grayscale image and a second grayscale image; Setting contrast pixels, for the first grayscale image and the second grayscale image, retaining positions above the contrast pixels and removing positions below the contrast pixels, to obtain first speckle images and second speckle images corresponding to the first grayscale image and the second grayscale image; The area of each connected domain in the first speckle image and the second speckle image is obtained, and the position of the geometric center point of each connected domain of the first speckle image and the second speckle image after denoising is obtained, wherein the geometric center point is the center point of the longest length of the area where the connected domain is located.
3. The seed wafer selection method according to claim 2, characterized in that: Counting the number of connected domains whose areas in the first speckle image and the second speckle image exceed a first preset area; if the number is greater than or equal to the first preset number, it indicates that the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is unqualified, and the selection is abandoned; if the number is less than the first preset number, continue to determine the distance between the geometric center points of the connected domains; If the distance between the geometric center points of adjacent connected domains in the first speckle image or the second speckle image is less than a preset length, it is recorded. When the number of records is greater than or equal to the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be unqualified, and the unqualified first seed crystal wafer or the second seed crystal wafer is abandoned, and the seed crystal wafer is reselected; when the number of records is less than the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be qualified and used as an alternative seed crystal wafer.
4. The seed wafer selection method according to claim 2, characterized in that: The method for obtaining the analysis data of the first crystal image and the second crystal image in step S3 includes: Performing grayscale processing on the first crystal image and the second crystal image to obtain a first crystal grayscale image and a second crystal grayscale image; For the first crystal grayscale image and the second crystal grayscale image, positions above the comparison pixel are retained, and positions below the comparison pixel are removed, so as to obtain a first crystal speckle image and a second crystal speckle image corresponding to the first crystal grayscale image and the second crystal grayscale image; The area of each connected domain in the first crystal speckle image and the second crystal speckle image after denoising is obtained, and the number of connected domains in the first crystal speckle image and the second crystal speckle image after denoising is obtained.
5. The seed wafer selection method according to claim 4, characterized in that: Counting the number of connected domains whose areas in the first crystal speckle image and the second crystal speckle image exceed a second preset area; if the number is greater than or equal to the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified, and the selection is abandoned; if the number is less than the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified, and the number of connected domains of the seed crystal wafer is continued to be determined; If the number of connected domains in the first crystal speckle image or the second crystal speckle image is greater than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified and the selection is abandoned; if the number of connected domains in the first crystal speckle image or the second crystal speckle image is less than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified and can be selected.
6. The seed wafer selection method according to claim 4, characterized in that: If the first seed crystal wafer is less deformed by residual stress than the second seed crystal wafer, the first crystal is less deformed by mechanical stress and thermal stress during growth than the second crystal; If the first seed crystal wafer is deformed more than the second seed crystal wafer due to residual stress, the first crystal is deformed more than the second crystal due to mechanical stress and thermal stress during the growth process.
7. The seed wafer selection method according to claim 4, characterized in that: The first speckle image and the second speckle image are filtered and a connected domain formed by at least three pixels is retained to remove noise; and the first crystal speckle image and the second crystal speckle image are filtered and a connected domain formed by at least three pixels is retained to remove noise.
8. A seed wafer selection system, characterized in that: include: A first acquisition module: used to acquire a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and acquire analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; A growth module: used for performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; A second acquisition module: used for acquiring a first crystal image corresponding to the first crystal, and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Comparison and selection module: used for comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the steps of the seed wafer selection method according to any one of claims 1 to 7 are implemented.
10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the seed wafer selection method according to any one of claims 1 to 7 are implemented.