Heating plate
By setting an isolation area on the heating plate to isolate the wafer to be processed from the ceramic sleeve on the outside of the heating plate, the problem that existing heating plates are prone to arc discharge under high-frequency electric fields is solved, and a higher wafer processing quality is achieved.
Patent Information
- Application Number
- CN202510399218.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2025-06-27
AI Technical Summary
Existing heating disks are prone to arc discharge under the action of high-frequency electric fields, resulting in abnormal ionization damage to the wafer edge plasma. The peripheral ceramic sleeve positioning structure is unevenly distributed due to the difference in material dielectric constant, further aggravating the probability of arc discharge.
Design a heating plate to isolate the wafer to be processed from the ceramic sleeve outside the heating plate to avoid arc discharge by setting an isolation zone on the heating plate. The heating plate includes a bearing area, an edge area and an isolation area, and the width of the isolation area is adapted to the plasma strength and avoids arc discharge between the three materials.
It effectively avoids arc discharge phenomenon generated on the outside of the heating disk, reduces the risk of wafer damage, and improves the quality of wafer processing during semiconductor device processing.
Smart Images
Figure CN120221379A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor device processing, and particularly to a hot plate. Background Art
[0002] In the field of semiconductor device processing, there are mainly two types of existing hot plates suitable for processing trimmed wafers. One is a hot plate structure with a diameter that exactly matches the wafer size, and the other is a hot plate structure with a diameter larger than the wafer size and positioned by a peripheral ceramic sleeve. However, both of these structures have defects in practical applications. In the hot plate structure with a completely matching size, the edge of the hot plate made of aluminum-based material is prone to partial discharge under the action of a high-frequency electric field, forming an arc, which causes abnormal ionization damage to the plasma at the wafer edge. In addition, in the hot plate structure positioned by a peripheral ceramic sleeve, there are three materials, silicon, metal, and ceramic, in the edge region of the trimmed wafer, which is likely to cause a serious uneven distribution of the radio frequency electric field due to the difference in the dielectric constants of the materials, further increasing the probability of arc discharge and deteriorating the process uniformity, thereby causing wafer damage.
[0003] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for an improved hot plate to avoid wafer damage caused by the arc discharge phenomenon generated outside the hot plate. Summary of the Invention
[0004] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or decisive elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description to follow.
[0005] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a hot plate, which can isolate the wafer to be processed from the ceramic sleeve outside the hot plate by providing an isolation zone on the hot plate, so as to avoid wafer damage caused by the arc discharge phenomenon generated outside the hot plate.
[0006] Specifically, the above-mentioned hot plate provided according to the first aspect of the present invention includes a bearing area, an edge area, and an isolation area. The bearing area is used to bear the wafer to be processed. A ceramic sleeve is provided outside the edge area to prevent arc discharge between the edge of the hot plate and the side wall of the process chamber where it is located. The isolation area is provided between the bearing area and the edge area and has a width adapted to the plasma intensity above the hot plate to prevent arc discharge between the three materials of the ceramic sleeve, the hot plate, and the wafer.
[0007] Further, in some embodiments of the present invention, the width of the isolation region is not less than 69 mm.
[0008] Further, in some embodiments of the present invention, the first radius of the bearing region is equal to the second radius of the wafer to achieve the horizontal positioning of the wafer.
[0009] Further, in some embodiments of the present invention, the depth of the bearing region is not less than the thickness of the wafer.
[0010] Further, in some embodiments of the present invention, the material of the wafer is silicon, the material of the heating plate is aluminum, and the material of the ceramic sleeve is alumina.
[0011] Further, in some embodiments of the present invention, a trimming edge is provided on the wafer to achieve the circumferential positioning of the wafer.
[0012] Further, in some embodiments of the present invention, at least one raised ceramic post is provided on the bearing region to support the back surface of the wafer.
[0013] Further, in some embodiments of the present invention, six raised ceramic posts are provided on the bearing region. Three first ceramic posts are circumferentially and uniformly distributed on a circle with a preset third radius. Three second ceramic posts are circumferentially and uniformly distributed on a circle with a preset fourth radius. The third radius is greater than the fourth radius.
[0014] Further, in some embodiments of the present invention, at least one lifting pin is provided on the bearing region to lift the wafer.
[0015] Further, in some embodiments of the present invention, three lifting pins are provided on the bearing region, and among them, the three lifting pins are circumferentially and uniformly distributed on a circle with a preset fifth radius. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present invention can be better understood. In the drawings, the components are not necessarily drawn to scale, and components with similar related characteristics or features may have the same or similar reference numerals.
[0017] Figure 1 Shows a schematic structural diagram of a heating plate provided according to a reference example.
[0018] Figure 2 Shows a schematic structural diagram of a heating plate provided according to a reference example.
[0019] Figure 3 Shows a schematic structural diagram of a trimming edge of a wafer provided according to a reference example.
[0020] Figure 4 Shows the electric field strength distribution diagram of the wafer surface provided according to a reference example.
[0021] Figure 5 Shows a schematic structural diagram of a heating plate provided according to some embodiments of the present invention.
[0022] Figure 6 Shows a schematic structural diagram of a wafer placed on a heating plate provided according to some embodiments of the present invention.
[0023] Figure 7 Shows a schematic cross-sectional view of a heating plate provided according to some embodiments of the present invention.
[0024] Figure 8 Shows a top view of a heating plate provided according to some embodiments of the present invention.
[0025] Figure 9 Shows the electric field strength distribution diagram of the wafer surface provided according to some embodiments of the present invention.
[0026] Reference numerals:
[0027] 11 Wafer
[0028] 12 Heating plate body
[0029] 13 Ceramic sleeve
[0030] 21 Loading area
[0031] 211 Ceramic column
[0032] 212 Lifting pin
[0033] 22 Edge area
[0034] 23 Isolation area
[0035] 30 Wafer Detailed implementation manners
[0036] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in combination with preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in combination with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.
[0037] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "mounted", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.
[0038] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the related drawings. This relative term is only for convenience of description and does not represent that the device described needs to be manufactured or operated in a specific orientation, so it should not be construed as a limitation to the present invention.
[0039] It can be understood that although terms such as "first", "second", and "third" can be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below can be referred to as the second component, region, layer, and / or part without departing from some embodiments of the present invention.
[0040] As described above, in the field of semiconductor device processing, there are mainly two types of existing heating plates suitable for processing trimmed wafers. One is a heating plate structure with a diameter completely matching the wafer size, and the other is a heating plate structure with a diameter larger than the wafer size and positioned by a peripheral ceramic sleeve. However, both of these structures have defects in practical applications. In the heating plate structure with a completely matching size, the edge of the aluminum-based heating plate is prone to partial discharge under the action of a high-frequency electric field, forming an arc, resulting in abnormal ionization damage to the plasma at the wafer edge. In addition, in the heating plate structure positioned by a peripheral ceramic sleeve, there are three materials, silicon, metal, and ceramic, in the edge region of the trimmed wafer, which is likely to cause serious uneven distribution of the radio frequency electric field due to the dielectric constant differences of the materials, further increasing the probability of arc discharge and deteriorating the process uniformity, and thus causing wafer damage.
[0041] Please refer to Figures 1 to 4 for combination. Figure 1 FIG. shows a schematic structural diagram of a heating plate provided according to a reference example. Figure 2 FIG. shows a schematic structural diagram of a heating plate provided according to a reference example. Figure 3 FIG. shows a schematic structural diagram of wafer trimming provided according to a reference example. Figure 4Shows the electric field intensity distribution diagram of the wafer surface provided according to a reference example.
[0042] In Figure 1 In the illustrated embodiment, the diameter of an existing heating plate is the same as that of the trimmed wafer, and the sizes are perfectly matched.
[0043] In Figure 2 In the illustrated embodiment, the diameter of another existing heating plate is larger than that of the trimmed wafer, and a wide-edge ceramic sleeve is provided on the outside, and this ceramic sleeve is used to position the trimmed wafer.
[0044] Furthermore, in Figure 3 In the illustrated embodiment, the above-mentioned heating plate includes a wafer 11, a heating plate body 12, and a ceramic sleeve 13. Here, the material of the wafer 11 is Si, the material of the heating plate body 12 is Al, and the material of the ceramic sleeve 13 is Al2O3. Thus, there are three materials, silicon, metal, and ceramic, in the edge region of the wafer 11.
[0045] As Figure 4 shown, in Figures 1 to 3 the heating plate structures provided by the two existing technologies shown, the radio frequency electric field intensity at the trimmed edge of the wafer is relatively low, the uniformity of the electric field distribution on the wafer surface is relatively poor, and arc discharge is likely to occur at its edge, resulting in damage to the wafer edge, thereby affecting the wafer processing quality.
[0046] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a heating plate, which can set an isolation area on the heating plate to isolate the wafer to be processed from the ceramic sleeve outside the heating plate, so as to avoid damage to the wafer caused by arc discharge generated outside the heating plate.
[0047] For details, please refer to Figures 5 to 7 . Figure 5 Shows a schematic structural diagram of a heating plate provided according to some embodiments of the present invention. Figure 6 Shows a schematic structural diagram of a wafer placed on a heating plate provided according to some embodiments of the present invention. Figure 7 Shows a schematic cross-sectional view of a heating plate provided according to some embodiments of the present invention.
[0048] In Figure 5 and Figure 6In the illustrated embodiment, the heating plate provided by the present invention includes a bearing area 21, an edge area 22, and an isolation area 23. Herein, the bearing area 21 is used to bear the wafer 30 to be processed. A ceramic sleeve is provided on the outer side of the edge area 22 to prevent arc discharge between the edge of the heating plate and the side wall of the process chamber where it is located. The isolation area 23 is provided between the bearing area 21 and the edge area 22 and has a width adapted to the plasma intensity above the heating plate to prevent arc discharge between the three materials of the ceramic sleeve, the heating plate, and the wafer 30.
[0049] Further, in Figure 6 the illustrated embodiment, the width of the above-mentioned isolation area 23 is not less than 69 mm.
[0050] In addition, in Figure 6 the illustrated embodiment, the first radius of the bearing area 21 is equal to the second radius of the wafer 30 to achieve the horizontal positioning of the wafer 30.
[0051] Furthermore, in some preferred embodiments, the above-mentioned first radius and second radius are preferably 150.6 mm.
[0052] In addition, in Figure 7 the illustrated embodiment, the depth of the bearing area 21 is not less than the thickness of the wafer 30.
[0053] Furthermore, in some preferred embodiments, the depth of the above-mentioned bearing area 21 is preferably 0.5 mm.
[0054] In addition, in Figure 6 the illustrated embodiment, the material of the wafer 30 is silicon, the material of the heating plate is aluminum, and the material of the ceramic sleeve is alumina.
[0055] Thus, since an isolation area 23 adapted to the plasma intensity above the heating plate is provided between the bearing area 21 bearing the wafer 30 and the edge area 22 provided with the ceramic sleeve, there are only two materials, aluminum and silicon, at the trimmed edge of the wafer 30, thereby avoiding arc discharge between the three materials of the ceramic sleeve, the heating plate, and the wafer 30, and thus avoiding damage to the wafer 30.
[0056] In addition, in Figure 6 the illustrated embodiment, a trimmed edge is provided on the wafer 30 to achieve the circumferential positioning of the wafer 30.
[0057] Please further refer to Figure 5 、 Figure 6 and Figure 8 . Figure 8 The top view of the heating plate provided according to some embodiments of the present invention is shown.
[0058] In Figure 5 and Figure 6In the illustrated embodiment, at least one raised ceramic post 211 is provided on the bearing area 21 for supporting the back surface of the wafer 30.
[0059] Further, in Figure 8 the illustrated embodiment, preferably six raised ceramic posts 211 are provided on the above-mentioned bearing area 21. Here, three first ceramic posts are circumferentially and uniformly distributed on a circle with a preset third radius r1 (for example: 100 mm), and three second ceramic posts are circumferentially and uniformly distributed on a circle with a preset fourth radius r2 (for example: 60 mm), and the third radius is greater than the fourth radius.
[0060] In addition, in Figure 5 and Figure 6 the illustrated embodiment, at least one lifting pin 212 is provided on the bearing area 21 for lifting the wafer 30.
[0061] Further, in Figure 8 the illustrated embodiment, preferably three lifting pins 212 are provided on the above-mentioned bearing area 21. Here, the three lifting pins 212 are circumferentially and uniformly distributed on a circle with a preset fifth radius r3 (for example: 125 mm).
[0062] Please refer to Figure 9 . Figure 9 shows the electric field intensity distribution diagram on the surface of the wafer provided according to some embodiments of the present invention.
[0063] As Figure 9 shown, in the above-mentioned heating plate structure provided by the present invention, the uniformity of the electric field distribution on the surface of the wafer 30 is relatively good, thereby effectively improving the wafer processing quality in the semiconductor device processing process.
[0064] In summary, the above-mentioned heating plate provided by the present invention can isolate the wafer to be processed from the ceramic sleeve outside the heating plate by providing an isolation area on the heating plate, so as to avoid damage to the wafer caused by the arc discharge phenomenon generated outside the heating plate.
[0065] Although the above methods are illustrated and described as a series of actions to simplify the explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or occur concurrently with other actions not illustrated and described herein but understood by those skilled in the art.
[0066] The steps of a method or algorithm described in connection with the embodiments disclosed in this specification can be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read from, and write to, the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside as discrete components in a user terminal.
[0067] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functions may be stored on or transmitted via a computer-readable medium as one or more instructions or code. The computer-readable medium includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A storage medium may be any available medium that can be accessed by a computer. By way of example and not limitation, such computer-readable medium can comprise RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a web site, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. As used herein, disk and disc include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk, and Blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable medium.
[0068] The foregoing description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A heating plate, characterized in that: include: A carrying area, used for carrying wafers to be processed; An edge region, the outer side of which is provided with a ceramic sleeve, for preventing arc discharge between the edge of the heating plate and the side wall of the process chamber where the heating plate is located; as well as The isolation zone is arranged between the bearing zone and the edge zone and has a width adapted to the plasma intensity above the heating plate, and is used to avoid arc discharge between the three materials of the ceramic sleeve, the heating plate and the wafer.
2. The heating plate according to claim 1, characterized in that The width of the isolation zone is not less than 69 mm.
3. The heating plate according to claim 1, characterized in that The first radius of the carrying area is equal to the second radius of the wafer, so as to achieve the positioning of the wafer in the horizontal direction.
4. The heating plate according to claim 1, characterized in that The depth of the carrying area is not less than the thickness of the wafer.
5. The heating plate according to claim 1, characterized in that The material of the wafer is silicon, the material of the heating plate is aluminum, and the material of the ceramic sleeve is alumina.
6. The heating plate according to claim 1, characterized in that The wafer is provided with a cutting edge for achieving circumferential positioning of the wafer.
7. The heating plate according to claim 1, characterized in that At least one raised ceramic column is disposed on the bearing area for supporting the back side of the wafer.
8. The heating plate according to claim 7, characterized in that Six raised ceramic columns are provided on the bearing area, wherein three first ceramic columns are evenly distributed circumferentially on a circle of a preset third radius, and three second ceramic columns are evenly distributed circumferentially on a circle of a preset fourth radius, and the third radius is greater than the fourth radius.
9. The heating plate according to claim 1, characterized in that: At least one lifting pin is disposed on the carrying area for lifting the wafer.
10. The heating plate according to claim 9, characterized in that Three lifting pins are arranged on the bearing area, wherein the three lifting pins are evenly distributed circumferentially on a circle of a preset fifth radius.