A laser fuse structure and method of manufacturing the same

Abstract

A laser fuse structure and a manufacturing method thereof, the method comprising: providing a substrate; forming a fuse metal layer on the substrate, the fuse metal layer comprising a lead portion and a fuse portion; forming a first dielectric layer covering the fuse metal layer; forming an etching stop layer on the first dielectric layer, the etching stop layer being located above the fuse portion; forming a second dielectric layer on the first dielectric layer and the etching stop layer; forming a conductive pillar and a top metal layer; forming a third dielectric layer covering the top metal layer; performing a first etching process on the third dielectric layer to form an opening exposing the etching stop layer, a width of a bottom of the opening being greater than a width of the etching stop layer; performing a second etching process on the dielectric layer exposed by the bottom of the opening to make the bottom of the opening protrude in the middle; and removing the etching stop layer. The laser fuse structure has a higher fuse breaking success rate and a higher yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a laser filament structure and its manufacturing method. Background Technology

[0002] A fuse is a critical component in electronic products. Its functions include managing the switching of redundancy memory, providing adjustable resistance and capacitance characteristics (RC trimming) in radio frequency (RF) circuits, and commonly used in security codes or low bit counts for data storage.

[0003] Traditional laser fuses mainly fall into three categories: metal fuses (burned off with high current), polysilicon fuses, and laser fuses (burned off with a laser). The principle of a fuse is that it is conductive under normal conditions, but melts when a high current or laser irradiation is applied, thus breaking the circuit and enabling data storage and encoding. Existing commercially available metal or polysilicon fuses that burn off with high current require a large current to burn off, which is limited by the design of the programming equipment and pins. Laser-burned metal fuses typically use the front layer metal (TM-1) of the top metal (TM) as the laser fuse, but the uneven thickness of the residual oxide layer on top of the fuse results in a low yield, significantly limiting the application of laser fuses. Summary of the Invention

[0004] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. The summary section of this invention is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0005] To address the existing problems, one embodiment of the present invention provides a method for manufacturing a laser filament structure, the method comprising:

[0006] Provide substrate;

[0007] A fusible metal layer is formed on the substrate, the fusible metal layer including a lead portion and a fuse portion;

[0008] A first dielectric layer is formed covering the fused metal layer;

[0009] An etch stop layer is formed on the first dielectric layer, and the etch stop layer is located above the fuse portion;

[0010] A conductive pillar is formed that penetrates the first dielectric layer, and the conductive pillar is electrically connected to the lead portion;

[0011] A top metal layer is formed that is electrically connected to the conductive pillar;

[0012] A second dielectric layer is formed covering the top metal layer;

[0013] A first etching process is performed on the second dielectric layer to form an opening that exposes the etch stop layer, the width of the bottom of the opening being greater than the width of the etch stop layer;

[0014] A second etching process is performed on the first dielectric layer exposed at the bottom of the opening to make the bottom center of the opening bulge.

[0015] Remove the etching stop layer.

[0016] In one embodiment, after forming the etch stop layer and before forming the conductive pillar, the method further includes: forming a second dielectric layer on the first dielectric layer and the etch stop layer;

[0017] The conductive pillar also penetrates the second dielectric layer.

[0018] In one embodiment, after removing the etch stop layer, the method further includes:

[0019] The bottom of the opening is rounded.

[0020] In one embodiment, the rounding process includes etching and / or high-temperature treatment.

[0021] In one embodiment, the first dielectric layer comprises at least two layers, wherein the refractive index of the at least two first dielectric layers increases sequentially from bottom to top.

[0022] In one embodiment, after forming a first dielectric layer covering the fuse metal layer, the method further includes performing a first planarization process on the first dielectric layer.

[0023] After forming the third dielectric layer covering the top metal layer, the process further includes performing a second planarization process on the third dielectric layer.

[0024] In one embodiment, the width of the top of the opening is greater than the width of the bottom of the opening.

[0025] Another embodiment of the present invention provides a laser fuse structure, the laser fuse structure comprising:

[0026] Substrate;

[0027] A fusible metal layer located on the substrate, the fusible metal layer including a lead portion and a fuse portion;

[0028] A dielectric layer covering the fused metal layer;

[0029] The conductive pillars and the top metal layer are located in the dielectric layer, the conductive pillars are electrically connected to the lead portion, and the top metal layer is located above the conductive pillars and electrically connected to the conductive pillars;

[0030] An opening located in the dielectric layer, the bottom of which protrudes in the middle.

[0031] In one embodiment, the bottom of the opening is a centrally convex arc shape.

[0032] In one embodiment, the dielectric layer located above the fused portion comprises at least two layers, and the refractive index of the at least two dielectric layers increases sequentially from bottom to top.

[0033] This invention also provides an electronic device, which includes the laser fuse structure described above.

[0034] The laser fuse structure and manufacturing method provided by the present invention form an etching stop layer between the first dielectric layer and the second dielectric layer, which can accurately control the etching depth of the opening and improve the uniformity of the dielectric layer above the fuse metal layer; the bottom center protrusion of the opening can form a lens structure, improve the success rate of laser melting and writing, and thus improve the yield of the laser fuse structure. Attached Figure Description

[0035] The following drawings, which are incorporated herein by reference as part of this invention, are used to understand the invention. The drawings illustrate embodiments of the invention and their descriptions, serving to explain the principles of the invention. In the drawings:

[0036] Figures 1A-1F A cross-sectional schematic diagram of a laser fuse structure obtained by sequentially implementing each step according to a manufacturing method of a laser fuse structure in the related art is shown.

[0037] Figure 2 A schematic flowchart illustrating a method for manufacturing a laser filament structure according to a specific embodiment of the present invention is shown.

[0038] Figures 3A-3J The diagram shows a cross-sectional view of the laser fuse structure obtained by sequentially performing each step of the manufacturing method of the laser fuse structure according to a specific embodiment of the present invention. Detailed Implementation

[0039] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the invention. However, it will be apparent to those skilled in the art that the invention can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid obscuring the invention.

[0040] It should be understood that the invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0041] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this invention, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0042] Spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0043] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of said features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0044] like Figures 1A-1F As shown, the manufacturing method of the laser filament structure in the related technology includes: Figure 1A As shown, a fused metal layer 101 is formed on the substrate 100; as Figure 1B As shown, a first dielectric layer 102 is formed covering the fuse metal layer 101; as Figure 1C As shown, conductive pillars 103 electrically connected to the fused metal layer 101 are formed in the first dielectric layer 102; as Figure 1D As shown, a top metal layer 104 electrically connected to the conductive pillar 103 is formed on the first dielectric layer 102; as Figure 1E As shown, a second dielectric layer 105 and a passivation layer 106 covering the top metal layer 104 are formed on the first dielectric layer 102; finally, as Figure 1F As shown, the passivation layer 106, the second dielectric layer 105, and the first dielectric layer 102 are etched to form an opening.

[0045] In this structure, the fused metal layer 101 is typically the preceding metal layer (TM-1) of the top metal layer. When the laser irradiates the fused metal layer 101 through the opening, it can melt and break the fused metal layer 101. When forming the opening, the passivation layer and dielectric layer that need to be etched are relatively thick, and the thickness of the remaining dielectric layer below the opening is difficult to control, which can easily affect the yield of the laser fused metal structure.

[0046] In view of the aforementioned technical problems, embodiments of the present invention propose a laser filament structure and its manufacturing method. Below, references... Figures 2-3A to Figure 3J The method for preparing the laser filament structure according to an embodiment of the present invention will be described in detail, wherein, Figure 2 A schematic flowchart illustrating a method for manufacturing a laser fuse structure according to a specific embodiment of the present invention is shown. Figures 3A-3J A cross-sectional view of a device obtained by implementing a manufacturing method for a laser filament structure according to a specific embodiment of the present invention is shown.

[0047] First, execute step S201, such as Figure 3AAs shown, a substrate 300 is provided. Exemplarily, the substrate 300 includes a semiconductor substrate and an interconnect layer formed on the semiconductor substrate. The semiconductor substrate is made of at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III / V compound semiconductors; or it may be silicon on dielectric (SOI), silicon on dielectric (SSOI), silicon germanium on dielectric (S-SiGeOI), silicon germanium on dielectric (SiGeOI), and germanium on dielectric (GeOI). One or more active or passive devices may be formed in the semiconductor substrate. Active devices may be transistors, diodes, and other known active devices; passive devices may be resistors, capacitors, inductors, and other various known passive devices. The interconnect layer includes an interlayer dielectric layer and a metal interconnect structure formed in the interlayer dielectric layer. The metal interconnect structure is a stack of alternating metal layers and vias, used to provide the required electrical connections between devices.

[0048] Next, step S202 is performed to form a fused metal layer 301 on the substrate 300.

[0049] The fuse metal layer 301 can be the front layer metal (TM-1) of the top metal (TM), and its relatively thin thickness is beneficial for laser ablation. For example, the thickness of the fuse metal layer 301 is between 1000 angstroms and 6000 angstroms. The material of the fuse metal layer 301 can include copper, copper alloys, aluminum, and aluminum alloys. Figure 3B As shown, the fuse metal layer 301 includes a lead portion 301B and a fusing portion 301A disposed along the x-direction. The width of the fusing portion 301A in the y-direction is smaller than the width of the lead portion in the y-direction, so that the fusing portion 301A can be more easily melted when irradiated by a laser.

[0050] For example, the fused metal layer 301 can be formed using an etching process. Specifically, a metal material layer is first deposited on the substrate 300, followed by the formation of a patterned photoresist layer on the metal material layer. The metal material layer is then etched using the photoresist layer as a mask to form the fused metal layer 301. Alternatively, the fused metal layer 301 can also be formed using a lift-off process. That is, a photoresist layer with openings is first formed on the substrate 300, followed by the deposition of a metal material layer to fill the openings in the photoresist layer. Finally, the photoresist layer is dissolved using a solvent, and the metal material layer on top of it is lifted off, leaving the metal material layer at the openings, i.e., the fused metal layer 301.

[0051] Next, step S203 is performed to form a first dielectric layer 302 on the fuse metal layer 301, such as... Figure 3C As shown.

[0052] For example, the material of the first dielectric layer 302 includes, but is not limited to, one or more of SiC, SiOC, SiO2, SiCN, SiOCH, SiC, SiN, and SiON. The first dielectric layer 302 can be formed using processes such as chemical vapor deposition (CVD) and physical vapor deposition (PVD).

[0053] For example, a first dielectric layer 302 is formed on a fused metal layer 301, such that after the deposition process is performed, a protrusion is formed on the surface of the first dielectric layer 302 above the fused metal layer 301. Therefore, after depositing the first dielectric layer 302, a planarization process can also be performed to make the surface of the first dielectric layer 302 flat. The planarization process includes, but is not limited to, a chemical mechanical polishing (CMP) process.

[0054] In some embodiments, the first dielectric layer 302 includes at least two layers, and the refractive index of the at least two first dielectric layers 302 increases sequentially from bottom to top to improve the light-gathering property of the first dielectric layer 302 and further improve the fusing efficiency of the fuse metal layer 301.

[0055] The at least two first dielectric layers 302 can be made of different materials. For example, the first dielectric layer may include a silicon oxide layer and a silicon nitride layer or a silicon oxynitride layer stacked sequentially, wherein the refractive index of silicon nitride or silicon oxynitride is higher than that of silicon oxide. Alternatively, the at least two first dielectric layers 302 may have different doping concentrations. For example, the first dielectric layer 302 may be a silicon oxide layer with a gradually increasing nitrogen doping concentration, thereby causing the refractive index of the first dielectric layer 302 to gradually increase. Alternatively, the at least two first dielectric layers may also have different densities. For example, the density of the first dielectric layer 302 may gradually increase from bottom to top, thereby causing the upper first dielectric layer to have a higher refractive index.

[0056] Next, step S204 is performed to form an etch stop layer 303 on the first dielectric layer 302. The etch stop layer 303 is located above the fuse portion 301A.

[0057] The etch stop layer 303 is made of a different material than the first dielectric layer 302. Exemplarily, the etch stop layer 303 can be one of silicon nitride, silicon oxynitride, silicon carbide, or NDC (nitrogen-doped carbide). Exemplarily, an etch stop layer material is first deposited on the first dielectric layer 302 using a deposition process. Next, the etch stop layer material is patterned, retaining the etch stop layer 303 above the fuse portion 301A, and removing the remaining etch stop layers. Further, the dimension of the etch stop layer 303 in the x-direction is smaller than the dimension of the fuse portion in the x-direction to facilitate subsequent etching of the first dielectric layer 302 on both sides of the etch stop layer 303.

[0058] For example, the thickness of the etch stop layer 303 is between 150 angstroms and 500 angstroms, which can be set according to actual needs.

[0059] Next, a third dielectric layer 304 can be formed on the etch stop layer 303 and the first dielectric layer 302. Exemplarily, the material of the third dielectric layer 304 may include, but is not limited to, USG (undoped silicate glass). The third dielectric layer 304 can be formed using chemical vapor deposition or physical vapor deposition processes. The third dielectric layer 304 covers the etch stop layer 303 such that the etch stop layer 303 is located between the first dielectric layer 302 and the third dielectric layer 304.

[0060] For example, the depth of the subsequently formed opening can be determined by adjusting the thicknesses of the first dielectric layer 302 and the third dielectric layer 304. When a deeper opening is required, the thickness of the first dielectric layer 302 can be reduced and the thickness of the third dielectric layer 304 can be increased.

[0061] Next, proceed to step S205, as follows: Figure 3F As shown, a conductive pillar 305 is formed penetrating the first dielectric layer 302. Further, the conductive pillar also penetrates the third dielectric layer 304. Specifically, the third dielectric layer 304 and the first dielectric layer 302 are etched sequentially to form a via. Then, a conductive material is filled into the via to form the conductive pillar 305. The conductive material includes one of copper, aluminum, nickel, gold, silver, and titanium, or other suitable conductive materials.

[0062] Next, step S206 is performed to form a top metal layer 306 electrically connected to the conductive post 305. The top metal layer 306 is electrically connected to the fuse metal layer 301 via the conductive post 305, so as to connect the fuse metal layer 301 to the desired circuit through the top metal layer 306. The top metal layer 306 can be used to further form solder pads (PADs) for wire bonding of the package.

[0063] For example, a top metal layer 306 is formed on the third dielectric layer 304. The top metal layer 306 can be made of commonly used metal materials, such as aluminum, copper, gold, tungsten, tin, or their alloys. The thickness of the top metal layer 306 is greater than the thickness of the fuse metal layer 301; in one example, the thickness of the top metal layer 306 is greater than 6000 angstroms.

[0064] Next, proceed to step S207, as follows: Figure 3GAs shown, a second dielectric layer 307 is formed covering the top metal layer 306. Exemplarily, the material of the second dielectric layer 307 includes, but is not limited to, one or more of SiC, SiOC, SiO2, SiCN, SiOCH, SiC, SiN, and SiON. The second dielectric layer 307 can be formed using processes such as chemical vapor deposition (CVD) and physical vapor deposition (PVD).

[0065] For example, a second dielectric layer 307 is formed on the top metal layer 306 such that, after the deposition process is performed, a protrusion is formed on the surface of the second dielectric layer 307 above the top metal layer 306. Therefore, after depositing the second dielectric layer 307, a planarization process (e.g., CMP process) can also be performed to make the surface of the second dielectric layer 307 flat.

[0066] For example, a passivation layer 308 may also be formed on the second dielectric layer 307. The material of the passivation layer 308 includes, but is not limited to, silicon nitride.

[0067] Next, proceed to step S208, as follows: Figure 3H As shown, a first etching process is performed on the second dielectric layer 307 to form an opening exposing the etch stop layer 303. The width of the bottom of the opening is greater than the width of the etch stop layer 303. The width of the bottom of the opening is the dimension of the opening along the x-direction, and the width of the etch stop layer 303 is the dimension of the etch stop layer 303 along the x-direction.

[0068] Specifically, a photoresist layer is first formed on the passivation layer 308. Using the photoresist layer as a mask, the passivation layer 308, the second dielectric layer 307, and the third dielectric layer 304 are sequentially etched to form an opening. The width of the bottom of the opening is greater than the width of the etch stop layer 303, meaning that the first dielectric layer 302 below is exposed on both sides of the etch stop layer 303, facilitating the etching of the first dielectric layer 302. During the etching process to form the opening, the presence of the etch stop layer 303 helps control the etching endpoint, resulting in a uniform morphology of the first dielectric layer 302 below the etch stop layer 303, thus improving the yield of the laser filament structure.

[0069] Next, step S209 is executed, performing a second etching process on the first dielectric layer 302 exposed at the bottom of the opening to create a bulge in the center of the bottom of the opening. It should be noted that the first etching process and the second etching process can be two different etching processes, or two different stages of the same etching process.

[0070] Specifically, because an etch stop layer 303 is formed in the middle of the bottom of the opening, it can protect the first dielectric layer 302 below the etch stop layer 303 from being etched. The first dielectric layers 302 on both sides of the etch stop layer 303 are etched downwards, making the bottom of the opening have a convex shape in the middle. This shape is equivalent to forming a lens structure above the fuse metal layer 301, which can focus the laser light irradiated into the opening and improve the success rate of melting the fuse metal layer 301.

[0071] Next, step S210 is performed to remove the etch stop layer 303, as follows: Figure 3J As shown. For example, a wet etching process can be used to remove the etch stop layer 303 to avoid damaging the underlying first dielectric layer 302.

[0072] For example, after removing the etch stop layer 303, the bottom of the opening can be rounded to improve its optical performance. After rounding, the bottom of the opening appears as a convex arc shape.

[0073] The rounding process includes etching and / or high-temperature processing. For example, isotropic etching can eliminate the sharp corners of the protrusion, giving it rounded corners. High-temperature processing can cause surface migration in the first dielectric layer 302, using the principle of minimizing surface energy to round the bottom of the opening.

[0074] Thus, the process steps of the manufacturing method of the laser filament structure according to the first aspect embodiment of the present invention are completed. It is understood that the manufacturing method of the laser filament structure in this embodiment includes not only the above steps, but may also include other necessary steps before, during or after the above steps, all of which are included in the scope of the manufacturing method in this embodiment.

[0075] According to the manufacturing method of the laser fuse structure provided in the embodiments of the present invention, an etching stop layer is formed between the first dielectric layer and the second dielectric layer, which can accurately control the etching depth of the opening and improve the uniformity of the dielectric layer above the fuse metal layer; the bottom center protrusion of the opening can form a lens structure, improve the success rate of laser melting and writing, and thus improve the yield of the laser fuse structure.

[0076] This invention also provides a laser fuse structure, which can be prepared by the methods described in the foregoing embodiments, but is not limited thereto.

[0077] The laser fuse structure of the present invention will be described in detail below. It is worth mentioning that, in order to avoid repetition, only a brief description will be given for the same components and structures as in the foregoing embodiments. For specific explanations and descriptions, please refer to the description in Embodiment 1.

[0078] Specifically, such as Figure 3JAs shown, the laser fuse structure of this embodiment includes: a substrate 300; a fuse metal layer 301 located on the substrate 300, the fuse metal layer 301 including a lead portion 301B and a fuse-breaking portion 301A; a dielectric layer covering the fuse metal layer 301, the dielectric layer including a first dielectric layer 302, a third dielectric layer 304 and a second dielectric layer 307; a conductive pillar 305 and a top metal layer 306 located in the dielectric layer, the conductive pillar 305 being electrically connected to the lead portion 301B of the fuse metal layer 301, the top metal layer 306 being located above the conductive pillar 305 and electrically connected to the conductive pillar 305; and an opening located in the dielectric layer, the bottom of the opening being raised in the middle.

[0079] Furthermore, the bottom of the opening is a rounded arc with a central bulge, thus providing better optical performance.

[0080] For example, the dielectric layer above the fuse portion 301A of the fuse metal layer 301 includes at least two layers, and the refractive index of the at least two dielectric layers increases sequentially from bottom to top.

[0081] In this embodiment of the invention, the bottom center of the opening of the laser fuse structure has a protrusion to form a lens structure, which improves the success rate of laser melting and writing, and thus improves the yield of the laser fuse structure.

[0082] This invention also provides an electronic device including the aforementioned laser fuse structure, which can be prepared according to the aforementioned method.

[0083] The electronic device in this embodiment can be any electronic product or device such as a mobile phone, tablet computer, laptop computer, netbook, game console, television, VCD player, DVD player, navigator, digital photo frame, camera, camcorder, voice recorder, MP3 player, MP4 player, PSP, etc., or any intermediate product including circuitry. The electronic device in this embodiment of the invention, due to the use of the aforementioned semiconductor devices, has better performance.

[0084] The present invention has been described through the above embodiments. However, it should be understood that the above embodiments are for illustrative purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, those skilled in the art will understand that the present invention is not limited to the above embodiments, and many more variations and modifications can be made based on the teachings of the present invention, all of which fall within the scope of protection claimed by the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for manufacturing a laser filament structure, characterized in that, The method includes: Provide substrate; A fusible metal layer is formed on the substrate, the fusible metal layer including a lead portion and a fuse portion; A first dielectric layer is formed covering the fused metal layer; An etch stop layer is formed on the first dielectric layer, and the etch stop layer is located above the fuse portion; A conductive pillar is formed that penetrates the first dielectric layer, and the conductive pillar is electrically connected to the lead portion; A top metal layer is formed that is electrically connected to the conductive pillar; A second dielectric layer is formed covering the top metal layer; A first etching process is performed on the second dielectric layer to form an opening that exposes the etch stop layer, the bottom width of the opening being greater than the width of the etch stop layer, so as to expose the first dielectric layer located around the etch stop layer; A second etching process is performed on the first dielectric layer exposed at the bottom of the opening to make the bottom center of the opening bulge upwards; Remove the etching stop layer; The bottom of the opening is rounded.

2. The manufacturing method as described in claim 1, characterized in that, After forming the etch stop layer and before forming the conductive pillar, the method further includes: forming a second dielectric layer on the first dielectric layer and the etch stop layer; The conductive pillar also penetrates the second dielectric layer.

3. The manufacturing method as described in claim 1, characterized in that, The rounding process includes etching and / or high-temperature treatment.

4. The manufacturing method as described in claim 1, characterized in that, The first dielectric layer comprises at least two layers, and the refractive index of the at least two first dielectric layers increases sequentially from bottom to top.

5. The manufacturing method as described in claim 1, characterized in that, After forming the first dielectric layer covering the fused metal layer, the process further includes performing a first planarization process on the first dielectric layer. After forming the third dielectric layer covering the top metal layer, the process further includes performing a second planarization process on the third dielectric layer.

6. The manufacturing method as described in claim 1, characterized in that, The width of the top of the opening is greater than the width of the bottom of the opening.

7. A laser fuse structure, characterized in that, The laser fuse structure is manufactured using the method described in any one of claims 1-6, and the laser fuse structure comprises: Substrate; A fusible metal layer located on the substrate, the fusible metal layer including a lead portion and a fuse portion; A dielectric layer covering the fused metal layer; The conductive pillars and the top metal layer are located in the dielectric layer, the conductive pillars are electrically connected to the lead portion, and the top metal layer is located above the conductive pillars and electrically connected to the conductive pillars; An opening located in the dielectric layer, the bottom of the opening protrudes upward in the middle, and the bottom of the opening is an arc shape with a central protrusion.

8. The laser fuse structure as described in claim 7, characterized in that, The dielectric layer located above the fused portion comprises at least two layers, and the refractive index of the at least two dielectric layers increases sequentially from bottom to top.

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