Preparation method of laser chip and laser chip

Abstract

The invention relates to the technical field of optical communication, and discloses a preparation method of a laser chip and the laser chip. The preparation method of the laser chip comprises the following steps: providing a substrate; and growing a protective layer on the substrate. And forming a character graphical area on the protection layer. And forming a first metal layer, wherein the first metal layer at least covers the character graphical area. And removing the protective layer and a part of the first metal layer to form characters. According to the preparation method, the definition of the characters can be improved, and the characters are easier to recognize.

Description

Technical Field

[0001] This application belongs to the field of optical communication technology, and particularly relates to a method for manufacturing a laser chip and a laser chip. Background Art

[0002] In the field of optical communication, the characters of a laser chip play a very important role and can be used for identification, management, etc.

[0003] When manufacturing a laser chip, the edges of the peeled characters are prone to breakage, resulting in blurred and unclear character edges, which affects the appearance of the laser chip. In the chip testing process, the laser chip cannot be recognized due to unclear character edges, affecting the recognition pass rate of chip testing. Summary of the Invention

[0004] This application aims to solve at least one of the technical problems existing in the related art.

[0005] Therefore, in the first aspect of this application, a method for manufacturing a laser chip is provided.

[0006] In the second aspect of this application, a laser chip is provided.

[0007] In view of this, according to the first aspect of the embodiments of this application, a method for manufacturing a laser chip is proposed, including the following steps: providing a substrate; growing a protective layer on the substrate; forming a character patterning region on the protective layer; forming a first metal layer that at least covers the character patterning region; removing the protective layer and part of the first metal layer to form characters.

[0008] Optionally, the step of forming a character patterning region on the protective layer includes: forming a first photoresist layer on the protective layer; forming a first exposure region on the first photoresist layer; etching the region on the protective layer corresponding to the first exposure region to form a character patterning region.

[0009] Optionally, the step of forming a character patterning region on the protective layer further includes: removing the first photoresist layer.

[0010] Optionally, the method for manufacturing a laser chip further includes: forming an electrode on the substrate.

[0011] Optionally, the step of forming an electrode on the substrate includes: forming a second photoresist layer on the substrate, the second photoresist layer covering the characters; forming a second exposure region on the second photoresist layer; forming a second metal layer that at least covers the second exposure region; removing the second photoresist layer and part of the second metal layer to form an electrode.

[0012] Optionally, the material of the second metal layer includes titanium platinum; the thickness of the second metal layer is 800 nm to 1000 nm.

[0013] Optionally, the material of the protective layer includes silicon dioxide or silicon nitride; the thickness of the protective layer is 500 nm to 1000 nm.

[0014] Optionally, the material of the first metal layer includes gold; the thickness of the first metal layer is 100 nm to 200 nm.

[0015] Optionally, the material of the substrate includes indium phosphide, indium gallium arsenide, or gallium arsenide.

[0016] According to a second aspect of the embodiments of the present application, a laser chip is provided, and the laser chip is obtained by using the preparation method of the laser chip in any previous embodiment.

[0017] The preparation method of the laser chip and the laser chip provided by the present application can at least achieve the following technical effects:

[0018] In the present application, by growing a protective layer on the substrate, a relatively flat and easily controllable surface foundation is provided for character fabrication, reducing damage to the substrate during subsequent processing and making the formation of the character edges more regular and clear. By forming a character patterning area on the protective layer, a groove consistent with the character pattern is formed on the protective layer. By forming the first metal layer, the first metal layer at least covers the character patterning area to prepare for forming characters. By removing the protective layer and part of the first metal layer to form characters, the clarity of the characters can be improved, making the characters easier to identify. By preparing a laser chip using the preparation method of the present application, the accuracy of laser chip identification and the test passing rate can be improved.

[0019] The above general description and the following description are only exemplary and explanatory, and are not used to limit the present application. Description of the Drawings

[0020] One or more embodiments are exemplarily illustrated by corresponding drawings. These exemplary illustrations and the drawings do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation, and among them:

[0021] Figure 1 is a flowchart of the preparation method of the laser chip provided by an embodiment of the present disclosure;

[0022] Figure 2 is a flowchart of the preparation method of the laser chip provided by another embodiment of the present disclosure;

[0023] Figure 3Flow chart of the method for manufacturing a laser chip provided by another embodiment of the present disclosure;

[0024] Figure 4 Schematic structural diagram of the substrate provided by an embodiment of the present disclosure;

[0025] Figure 5 Schematic structural diagram after the step of growing a protective layer on the substrate provided by an embodiment of the present disclosure;

[0026] Figure 6 Schematic structural diagram after the step of forming a first photoresist layer on the protective layer provided by an embodiment of the present disclosure;

[0027] Figure 7 Schematic structural diagram after the step of forming a first exposure area in the first photoresist layer provided by an embodiment of the present disclosure;

[0028] Figure 8 Schematic structural diagram after the step of forming a character patterning area provided by an embodiment of the present disclosure;

[0029] Figure 9 Schematic structural diagram after the step of removing the first photoresist layer provided by an embodiment of the present disclosure;

[0030] Figure 10 Schematic structural diagram after the step of forming a first metal layer provided by an embodiment of the present disclosure;

[0031] Figure 11 Schematic structural diagram after the step of forming a character provided by an embodiment of the present disclosure;

[0032] Figure 12 Schematic structural diagram after the step of forming a second photoresist layer on the substrate provided by an embodiment of the present disclosure;

[0033] Figure 13 Schematic structural diagram after the step of forming a second exposure area in the second photoresist layer provided by an embodiment of the present disclosure;

[0034] Figure 14 Schematic structural diagram after the step of forming a second metal layer provided by an embodiment of the present disclosure;

[0035] Figure 15 Schematic structural diagram of the laser chip provided by an embodiment of the present disclosure.

[0036] The reference signs are shown as:

[0037] 100: Laser chip; 101: Substrate; 102: Protective layer; 103: Character patterning area; 104: First metal layer; 105: Character; 106: First photoresist layer; 107: First exposure area; 108: Electrode; 109: Second photoresist layer; 110: Second exposure area; 111: Second metal layer. Detailed implementation mode

[0038] In order to be able to understand the features and technical content of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are only for reference and illustration, and are not intended to limit the embodiments of the present disclosure. In the following technical description, for the sake of explanation, numerous details are provided to give a thorough understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be shown in a simplified manner to simplify the drawings.

[0039] In the embodiments of the present disclosure, the terms "first", "second", etc. in the description and claims of the present disclosure and the above-mentioned accompanying drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to implement the embodiments of the present disclosure described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion.

[0040] In the embodiments of the present disclosure, the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", etc. is based on the orientation or positional relationship shown in the accompanying drawings. These terms are mainly used to better describe the embodiments of the present disclosure and their embodiments, and are not used to limit that the indicated devices, elements or components must have a specific orientation, or be constructed and operated in a specific orientation. And, in addition to being able to represent an orientation or positional relationship, some of the above terms may also be used to represent other meanings. For example, the term "upper" may also be used to represent a certain attachment relationship or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0041] In addition, the terms "arrangement", "connection", "fixation" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or there can also be internal communication between two devices, elements or components. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0042] Unless otherwise specified, the term "plural" means two or more than two.

[0043] In the embodiments of the present disclosure, the character " / " indicates that the objects before and after are in an "or" relationship. For example, A / B means: A or B.

[0044] The term "and / or" is an associative relationship describing an object, indicating that there can be three relationships. For example, A and / or B means: A or B, or, the three relationships of A and B.

[0045] It should be noted that, without conflict, the embodiments in the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0046] As Figure 1 shown, the embodiments of the present disclosure provide a method for preparing a laser chip 100. The method for preparing the laser chip 100 includes the following steps:

[0047] S101, as Figure 4 shown, provide a substrate.

[0048] In this embodiment, the substrate 101 can play a supporting role and provide a basis for subsequent processing.

[0049] In some embodiments, the material of the substrate 101 includes indium phosphide (InP), indium gallium arsenide (InGaAs), or gallium arsenide (GaAs).

[0050] S102, as Figure 5 shown, grow a protective layer on the substrate.

[0051] In this embodiment, by growing the protective layer 102 on the substrate 101, a relatively flat and easy-to-control surface basis is provided for the preparation of the character 105, reducing damage to the substrate 101 during subsequent processing, and making the formation of the edge of the character 105 more regular and clear.

[0052] During actual processing, the protective layer 102 can be grown on the substrate 101 by chemical vapor deposition (CVD) or electron beam evaporation in physical vapor deposition (PVD).

[0053] In some embodiments, the material of the protective layer 102 includes silicon dioxide or silicon nitride.

[0054] In some embodiments, the thickness of the protective layer 102 is 500 nm to 1000 nm.

[0055] Optionally, the thickness of the protective layer 102 is 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or other values between 500 nm and 1000 nm.

[0056] S103. As shown in Figures 6 to 9 the figure, a character patterning region is formed in the protective layer.

[0057] In this embodiment, by forming the character patterning region 103 in the protective layer 102, a groove consistent with the character pattern is formed in the protective layer 102. Specifically, the character patterning region 103 may be a groove consistent with the character pattern, and the character pattern can reflect the shape and size of the character 105.

[0058] S104. As shown in Figure 10 the figure, a first metal layer is formed, and the first metal layer covers at least the character patterning region.

[0059] In this embodiment, by forming the first metal layer 104, the first metal layer 104 covers at least the character patterning region 103, preparing for the formation of the character 105.

[0060] During actual processing, metal (such as gold) can be evaporated on the substrate 101 to form the first metal layer 104. The first metal layer 104 can cover the top surface of the protective layer 102 and the character patterning region 103.

[0061] In some embodiments, the material of the first metal layer 104 includes gold (Au).

[0062] In some embodiments, the thickness of the first metal layer 104 is 100 nm to 200 nm.

[0063] Optionally, the thickness of the first metal layer 104 is 100 nm, 120 nm, 150 nm, 180 nm, 200 nm or other values between 100 nm and 200 nm.

[0064] S105. As shown in Figure 11 the figure, the protective layer and a part of the first metal layer are removed to form a character.

[0065] In this embodiment, by removing the protective layer 102 and a part of the first metal layer 104, the character 105 is formed, improving the clarity of the character 105 and making the character 105 easier to be recognized. Specifically, the structure obtained by performing step S104 is placed in a buffered oxide etchant (BOE solution), and left static for 10 min to 20 min to remove the protective layer 102 and a part of the first metal layer 104, only leaving the character pattern formed after metal evaporation, completing the fabrication and peeling of the character 105. The peeled character 105 is clearer and easier to recognize.

[0066] In practical applications, when the laser chip 100 is prepared by the preparation method of this embodiment, the clarity of the character 105 on the laser chip 100 can be improved. When performing chip testing, the accuracy of identifying the laser chip 100 and the passing rate of the test can be improved.

[0067] In some embodiments, as Figures 6 to 8 shown, the steps of forming the character patterning region 103 on the protective layer 102 include: forming a first photoresist layer 106 on the protective layer 102. Forming a first exposure region 107 in the first photoresist layer 106. Etching the region on the protective layer 102 corresponding to the first exposure region 107 to form the character patterning region 103.

[0068] In this embodiment, by forming the first photoresist layer 106 on the protective layer 102, it prepares for the subsequent lithography process. Specifically, the photoresist can be uniformly coated on the top surface of the protective layer 102 to form the first photoresist layer 106.

[0069] In this embodiment, forming the first exposure region 107 in the first photoresist layer 106. Specifically, a preset character pattern can be transferred onto the first photoresist layer 106 through lithography technology to form the first exposure region 107. For example, a mask plate with a character pattern is placed above the substrate 101 having the first photoresist layer 106, and through exposure and development, the character pattern is transferred onto the first photoresist layer 106.

[0070] In this embodiment, etching the region on the protective layer 102 corresponding to the first exposure region 107 to form the character patterning region 103. Specifically, a reactive ion (RIE) etcher can be used to etch away the protective layer 102 at the position corresponding to the first exposure region 107, so as to transfer the character pattern on the first photoresist layer 106 onto the protective layer 102, realizing the formation of a groove on the protective layer 102 that is consistent with the character pattern, that is, forming the character patterning region 103 on the protective layer 102.

[0071] In some embodiments, as Figure 9 shown, the steps of forming the character patterning region 103 on the protective layer 102 further include: removing the first photoresist layer 106.

[0072] In this embodiment, by removing the first photoresist layer 106, it prepares for the subsequent formation of the first metal layer 104 to improve the clarity of the character 105.

[0073] In practical applications, the first photoresist layer 106 can be removed by wet stripping or dry stripping.

[0074] As Figure 2 shown, the embodiments of the present disclosure further provide a preparation method for a laser chip 100, including the following steps:

[0075] S201, as Figure 4 shown, provide a substrate.

[0076] S202, as Figure 5 shown, grow a protective layer on the substrate.

[0077] S203, as Figure 6 shown, form a first photoresist layer on the protective layer.

[0078] S204, as Figure 7 shown, form a first exposure area in the first photoresist layer.

[0079] S205, as Figure 8 shown, etch the area on the protective layer corresponding to the first exposure area to form a character patterning area.

[0080] S206, as Figure 9 shown, remove the first photoresist layer.

[0081] S207, as Figure 10 shown, form a first metal layer that at least covers the character patterning area.

[0082] S208, as Figure 11 shown, remove the protective layer and part of the first metal layer to form a character.

[0083] In some embodiments, as Figures 12 to 15 shown, the method for preparing the laser chip 100 further includes: forming an electrode 108 on the substrate 101.

[0084] In this embodiment, after the character 105 is formed, an electrode 108 is formed on the substrate 101, which can be used to realize the injection and transmission of the current of the laser chip 100. Moreover, the character 105 and the electrode 108 of the laser chip 100 are not formed in the same processing step, which helps to make the peeled-off character 105 clearer and easier to identify.

[0085] In practical applications, when the laser chip 100 is prepared by the preparation method of this embodiment, the clarity of the character 105 of the laser chip 100 is improved, making the character 105 easier to be identified. When performing chip testing, the accuracy of identifying the laser chip 100 and the passing rate of the test can be improved.

[0086] In some embodiments, as Figures 12 to 15As shown, the steps of forming the electrode 108 on the substrate 101 include: forming a second photoresist layer 109 on the substrate 101, and the second photoresist layer 109 covers the character 105. Forming a second exposure area 110 on the second photoresist layer 109. Forming a second metal layer 111, and the second metal layer 111 covers at least the second exposure area 110. Removing the second photoresist layer 109 and a part of the second metal layer 111 to form the electrode 108.

[0087] In this embodiment, forming a second photoresist layer 109 on the substrate 101, and the second photoresist layer 109 covers the character 105. Specifically, the photoresist can be uniformly coated on the substrate 101 to form the second photoresist layer 109, and the second photoresist layer 109 covers the character 105 to prepare for the subsequent lithography process.

[0088] In this embodiment, forming a second exposure area 110 on the second photoresist layer 109. Specifically, the preset electrode pattern is transferred to the second photoresist layer 109 through lithography technology to form the second exposure area 110. For example, a mask plate with an electrode pattern can be placed above the substrate 101 with the second photoresist layer 109, and through exposure and development, the electrode pattern is transferred to the second photoresist layer 109.

[0089] In this embodiment, forming a second metal layer 111, and the second metal layer 111 covers at least the second exposure area 110. Specifically, evaporating a metal (such as titanium platinum gold) on the substrate 101 to form the second metal layer 111, and the second metal layer 111 can cover the top surface of the second photoresist layer 109 and the second exposure area 110. The second metal layer 111 can enable the electrode 108 to form a good conductive path.

[0090] In this embodiment, removing the second photoresist layer 109 and a part of the second metal layer 111 to form the electrode 108. Specifically, the structure obtained in the step of forming the second metal layer 111 is placed in a stripping solution and rotated for 15 min to 20 min. Removing the second photoresist layer 109 and a part of the second metal layer 111, only leaving the electrode 108 formed after evaporating the metal, to realize the fabrication and stripping of the electrode 108. The preparation method of this embodiment can improve the clarity of the character 105, and further improve the recognition accuracy and test passing rate of the laser chip 100. In this embodiment, the stripping solution can use N-methylpyrrolidone solution (NMP solution). The rotation time can be 15 min, 16 min, 17 min, 18 min, 19 min, 20 min or other values between 15 min and 20 min.

[0091] In some embodiments, the material of the second metal layer 111 includes titanium platinum gold.

[0092] In some embodiments, the thickness of the second metal layer 111 is 800 nm to 1000 nm.

[0093] Optionally, the thickness of the second metal layer 111 is 800 nm, 900 nm, 1000 nm, or other values between 800 nm and 1000 nm.

[0094] As Figure 3 shown, an embodiment of the present disclosure also provides a method for manufacturing a laser chip 100, including the following steps:

[0095] S301, as Figure 4 shown, provide a substrate.

[0096] S302, as Figure 5 shown, grow a protective layer on the substrate.

[0097] S303, as Figure 6 shown, form a first photoresist layer on the protective layer.

[0098] S304, as Figure 7 shown, form a first exposure area in the first photoresist layer.

[0099] S305, as Figure 8 shown, etch the area on the protective layer corresponding to the first exposure area to form a character patterning area.

[0100] S306, as Figure 9 shown, remove the first photoresist layer.

[0101] S307, as Figure 10 shown, form a first metal layer, and the first metal layer covers at least the character patterning area.

[0102] S308, as Figure 11 shown, remove the protective layer and part of the first metal layer to form a character.

[0103] S309, as Figure 12 shown, form a second photoresist layer on the substrate, and the second photoresist layer covers the character.

[0104] S310, as Figure 13 shown, form a second exposure area in the second photoresist layer.

[0105] S311, as Figure 14 shown, form a second metal layer, and the second metal layer covers at least the second exposure area.

[0106] S312, as Figure 15 shown, remove the second photoresist layer and part of the second metal layer to form an electrode.

[0107] The preparation of the laser chip 100 is completed.

[0108] As Figures 1 to 15 shown, an embodiment of the present disclosure also provides a laser chip 100. The laser chip 100 is obtained by using the preparation method of the laser chip 100 in any previous embodiment.

[0109] The laser chip 100 in this embodiment is obtained by using the preparation method of the laser chip 100 in any previous embodiment, which improves the clarity of the character 105 and makes the character 105 easier to be recognized. When performing chip testing, the recognition accuracy and recognition passing rate of the chip can be improved.

[0110] Optionally, the laser chip 100 includes a substrate 101, a character 105, and an electrode 108. The character 105 and the electrode 108 are arranged on the substrate 101 at intervals.

[0111] The above are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present application shall be included in the protection scope of the present application. The above is only the preferred implementation manner of the present application. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present application, several improvements and variations can be made, and these improvements and variations should also be regarded as the protection scope of the present application.

Claims

1. A method for preparing a laser chip, characterized in that: The steps include: providing a substrate; growing a protective layer on the substrate; forming a character graphic area on the protective layer; forming a first metal layer, wherein the first metal layer at least covers the character patterning area; The protective layer and a portion of the first metal layer are removed to form characters.

2. The preparation method according to claim 1, characterized in that: The step of forming a character graphic area on the protective layer comprises: forming a first photoresist layer on the protective layer; forming a first exposure area in the first photoresist layer; The area on the protection layer corresponding to the first exposure area is etched to form a character patterning area.

3. The preparation method according to claim 2, characterized in that: The step of forming a character graphic area on the protective layer also includes: The first photoresist layer is removed.

4. The preparation method according to any one of claims 1 to 3, characterized in that Also includes: Electrodes are formed on the substrate.

5. The preparation method according to claim 4, characterized in that: The step of forming an electrode on the substrate comprises: forming a second photoresist layer on the substrate, wherein the second photoresist layer covers the characters; forming a second exposure area in the second photoresist layer; forming a second metal layer, wherein the second metal layer at least covers the second exposure area; The second photoresist layer and a portion of the second metal layer are removed to form an electrode.

6. The preparation method according to claim 5, characterized in that: The material of the second metal layer includes titanium platinum; The thickness of the second metal layer is 800nm ​​to 1000nm.

7. The preparation method according to any one of claims 1 to 3, characterized in that The material of the protective layer includes silicon dioxide or silicon nitride; The thickness of the protective layer is 500nm to 1000nm.

8. The preparation method according to any one of claims 1 to 3, characterized in that: The material of the first metal layer includes gold; The thickness of the first metal layer is 100 nm to 200 nm.

9. The preparation method according to any one of claims 1 to 3, characterized in that: The material of the substrate includes indium phosphide, indium gallium arsenide or gallium arsenide.

10. A laser chip, characterized in that: The laser chip is obtained by using the method for preparing a laser chip according to any one of claims 1 to 9.

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