Method and device for simulating dynamic junction temperature of IGBT (Insulated Gate Bipolar Translator) of ship electric propulsion system

Abstract

The invention relates to a ship electric propulsion system IGBT dynamic junction temperature simulation method and device, and belongs to the technical field of power electronics, and the ship electric propulsion system IGBT dynamic junction temperature simulation method comprises the steps: connecting an IGBT loss simulation model and a heat transfer network simulation model to a basic IGBT system simulation model, and obtaining an improved IGBT system simulation model; the IGBT loss simulation model is used for calculating the loss power of an IGBT, and the heat transfer network simulation model is used for calculating a temperature change value based on the loss power of the IGBT; and taking the environment temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment as the input of the improved IGBT system simulation model at the current moment, and taking the junction temperature output by the improved IGBT system simulation model at the current moment as the simulation result at the current moment. The problem that an existing IGBT junction temperature simulation method is difficult to be used for dynamic junction temperature simulation is solved.

Description

Technical Field

[0001] The present invention relates to the field of power electronics technology, and particularly to a method and device for simulating the dynamic junction temperature of an IGBT in a ship power propulsion system. Background Art

[0002] In a power propulsion system, an Insulated-Gate Bipolar Transistor (IGBT) is used to convert electrical energy from a generator or battery into a form suitable for a propulsion motor. Thermal characteristics are important factors affecting the operating characteristics of power electronic devices and are important parameters for characterizing the health state of power electronic devices. The junction temperature of an IGBT, as a key parameter, directly affects the reliability and lifespan of the power propulsion system.

[0003] During the design process of equipment related to a power propulsion system, digital simulation technology has been widely integrated into the R & D cycle. Using simulation technology to assist in verifying whether the designed equipment and system meet the design objectives can effectively improve the R & D efficiency.

[0004] Currently, the simulation prediction of IGBT junction temperature characteristics is mostly limited to steady-state fixed operating condition calculations, lacking a junction temperature simulation method that follows the dynamic operating process of the system. That is, the existing IGBT junction temperature simulation methods are difficult to be used for dynamic junction temperature simulation. Summary of the Invention

[0005] In view of this, it is necessary to provide a method and device for simulating the dynamic junction temperature of an IGBT in a ship power propulsion system to solve the problem that the existing IGBT junction temperature simulation methods are difficult to be used for dynamic junction temperature simulation.

[0006] To solve the above problems, in a first aspect, the present invention provides a method for simulating the dynamic junction temperature of an IGBT in a ship power propulsion system, including: Connecting an IGBT loss simulation model and a heat transfer network simulation model to a basic IGBT system simulation model to obtain an improved IGBT system simulation model. The IGBT loss simulation model is used to calculate the loss power of the IGBT, and the heat transfer network simulation model is used to calculate the temperature change value based on the loss power of the IGBT; Taking the ambient temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment as the input of the improved IGBT system simulation model at the current moment, and taking the junction temperature output by the improved IGBT system simulation model at the current moment as the simulation result at the current moment.

[0007] In a possible implementation, the IGBT loss simulation model and the heat transfer network simulation model are obtained by converting the IGBT loss mathematical model and the heat transfer network mathematical model based on a computer language. The IGBT loss mathematical model is constructed based on the IGBT device parameter data after parameter fitting, and the heat transfer network mathematical model is constructed based on the IGBT device parameter data and the physical structure of the IGBT device.

[0008] In a possible implementation, the construction of the IGBT loss mathematical model includes: Performing parameter fitting on the IGBT device parameter data to obtain an IGBT typical characteristic curve; Based on the IGBT typical characteristic curve, constructing the IGBT loss mathematical model.

[0009] In a possible implementation, the construction of the heat transfer network mathematical model includes: Extracting heat transfer network parameters from the IGBT device parameter data, and constructing the heat transfer network mathematical model based on the heat transfer network parameters and the physical structure of the IGBT device.

[0010] In a possible implementation, the IGBT typical characteristic curve includes an output characteristic curve, a transfer characteristic curve, a switching characteristic curve, a dynamic characteristic curve, and a temperature characteristic curve; The IGBT loss mathematical model is used to calculate the IGBT conduction loss, the IGBT switching loss, the diode conduction loss, and the diode switching loss.

[0011] In a possible implementation, the heat transfer network parameters include: thermal resistance parameters and heat capacity parameters; The heat transfer network mathematical model is used to calculate the temperature change value based on the loss power.

[0012] In a possible implementation, the IGBT loss simulation model and the heat transfer network simulation model are obtained by converting the IGBT loss mathematical model and the heat transfer network mathematical model based on Modelica language.

[0013] On the other hand, the present invention also provides an IGBT dynamic junction temperature simulation device for a ship electric propulsion system, including: An access module, configured to access the IGBT loss simulation model and the heat transfer network simulation model to a basic IGBT system simulation model to obtain an improved IGBT system simulation model. The IGBT loss simulation model is used to calculate the loss power of the IGBT, and the heat transfer network simulation model is used to calculate the temperature change value based on the loss power of the IGBT; A simulation module, configured to use the ambient temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment as the input of the improved IGBT system simulation model at the current moment, and use the junction temperature output by the improved IGBT system simulation model at the current moment as the simulation result at the current moment.

[0014] In a second aspect, the present invention further provides a simulation device, including a memory and a processor, wherein, The memory is configured to store a program; The processor is coupled to the memory and configured to execute the program stored in the memory to implement the steps in the IGBT dynamic junction temperature simulation method for a ship electric propulsion system in any of the above implementation manners.

[0015] In a third aspect, the present invention further provides a computer-readable storage medium for storing computer-readable programs or instructions, and when the programs or instructions are executed by a processor, the steps in the IGBT dynamic junction temperature simulation method for a ship electric propulsion system in any of the above implementation manners can be implemented.

[0016] The beneficial effects of the present invention are as follows: The IGBT dynamic junction temperature simulation method and device for a ship electric propulsion system provided by the present invention obtain an improved IGBT system simulation model by connecting an IGBT loss simulation model and a heat transfer network simulation model to a basic IGBT system simulation model, so as to be able to dynamically simulate the change of the junction temperature of the IGBT over a period of time and realize the IGBT dynamic junction temperature simulation. The present invention solves the problem that the existing IGBT junction temperature simulation method is difficult to be used for dynamic junction temperature simulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic flowchart of an embodiment of the IGBT dynamic junction temperature simulation method for a ship electric propulsion system provided by the present invention; Figure 2 It is a schematic flowchart of an embodiment of the IGBT dynamic junction temperature simulation calculation process provided by the present invention; Figure 3 It is a schematic structural diagram of an embodiment of the heat transfer network provided by the present invention; Figure 4 It is a schematic structural diagram of an embodiment of the IGBT dynamic junction temperature simulation device for a ship electric propulsion system provided by the present invention; Figure 5 It is a schematic structural diagram of an embodiment of the simulation device provided by the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0018] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention.

[0019] In the description of the embodiments of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more. "And / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent three situations: A exists alone, A and B exist simultaneously, and B exists alone.

[0020] The descriptions such as "first" and "second" involved in the embodiments of the present invention are only for descriptive purposes, and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Therefore, the technical features defined with "first" and "second" may explicitly or implicitly include at least one such feature.

[0021] Referring to "embodiment" in this article means that the specific features, structures or characteristics described in combination with the embodiment can be included in at least one embodiment of the present invention. The appearance of this phrase in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0022] Before presenting the embodiments, the following terms will be explained first.

[0023] IGBT junction temperature: The junction temperature of an IGBT refers to the temperature of its internal semiconductor junction, which directly affects its performance and reliability. An increase in the junction temperature will cause an increase in the on-resistance, a slowdown in the switching speed, and an increase in losses. High temperatures will accelerate material aging, shorten the device life, and even cause thermal runaway.

[0024] The present invention provides a method and device for simulating the dynamic junction temperature of IGBTs in a ship electric propulsion system, which will be described separately below.

[0025] Figure 1 It is a schematic flowchart of an embodiment of the method for simulating the dynamic junction temperature of IGBTs in the ship electric propulsion system provided by the present invention. As Figure 1 shown, the method for simulating the dynamic junction temperature of IGBTs in the ship electric propulsion system includes: S101. Connect the IGBT loss simulation model and the heat transfer network simulation model to the basic IGBT system simulation model to obtain an improved IGBT system simulation model. The IGBT loss simulation model is used to calculate the loss power of the IGBT, and the heat transfer network simulation model is used to calculate the temperature change value based on the loss power of the IGBT.

[0026] It should be noted that: By connecting the IGBT loss simulation model and the heat transfer network simulation model to the basic IGBT system simulation model, an improved IGBT system simulation model can be obtained for the final IGBT dynamic junction temperature simulation. The IGBT loss simulation model can calculate the power loss of the IGBT during the dynamic simulation process, while the heat transfer network simulation model can calculate the temperature change value according to the IGBT power loss, so that the improved IGBT system simulation model can dynamically calculate the temperature change of the IGBT and realize the IGBT dynamic junction temperature simulation.

[0027] S102. Take the ambient temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment as the input of the improved IGBT system simulation model at the current moment, and take the junction temperature output by the improved IGBT system simulation model at the current moment as the simulation result at the current moment.

[0028] It should be noted that: When performing the IGBT dynamic junction temperature simulation according to the improved IGBT system simulation model, the initial system parameters and the ambient temperature need to be input, and then the power loss and temperature change value obtained by the IGBT loss simulation model and the heat transfer network simulation model are used to realize the IGBT dynamic junction temperature simulation for a period of time, improving the problem that the current IGBT junction temperature simulation model is difficult to accurately perform the dynamic junction temperature simulation.

[0029] In summary, the IGBT dynamic junction temperature simulation method for the ship electric propulsion system provided by the embodiment of the present invention can obtain an improved IGBT system simulation model by connecting the IGBT loss simulation model and the heat transfer network simulation model to the basic IGBT system simulation model, so as to dynamically simulate the junction temperature change of the IGBT for a period of time and realize the IGBT dynamic junction temperature simulation. The present invention solves the problem that the existing IGBT junction temperature simulation method is difficult to be used for dynamic junction temperature simulation.

[0030] Combined Figure 2 it can be seen that the specific steps of the IGBT dynamic junction temperature simulation process provided by the present invention are as follows: 1. Analyze the IGBT device data sheet and extract the device parameters and typical characteristic curves.

[0031] In some embodiments of the present invention, the IGBT loss simulation model and the heat transfer network simulation model are obtained by converting the IGBT loss mathematical model and the heat transfer network mathematical model based on a computer language. The IGBT loss mathematical model is constructed based on the IGBT device parameter data after parameter fitting, and the heat transfer network mathematical model is constructed based on the IGBT device parameter data and the physical structure of the IGBT device.

[0032] Specifically, for the convenience of subsequent simulation calculations, the IGBT loss simulation model and the heat transfer network simulation model can be constructed according to the IGBT loss mathematical model and the heat transfer network mathematical model, that is, converting the mathematical model into a simulation model expressed in a computer language. By converting the mathematical model into a simulation model expressed in a computer language, the complexity of the simulation calculation can be reduced.

[0033] In some embodiments of the present invention, the construction of the IGBT loss mathematical model includes: Performing parameter fitting on the IGBT device parameter data to obtain the IGBT typical characteristic curves; Based on the IGBT typical characteristic curves, constructing the IGBT loss mathematical model.

[0034] In some embodiments of the present invention, the IGBT typical characteristic curves include output characteristic curves, transfer characteristic curves, switching characteristic curves, dynamic characteristic curves, and temperature characteristic curves; The IGBT loss mathematical model is used to calculate the IGBT conduction loss, IGBT switching loss, diode conduction loss, and diode switching loss.

[0035] Specifically, input the typical characteristic curves into the model. The abscissa of the curve corresponds to the simulation input, and the ordinate corresponds to the simulation output. The IGBT dynamic junction temperature calculation is realized within a certain input range.

[0036] 2. Establish the mathematical model for IGBT module loss and heat transfer calculation.

[0037] (1) IGBT conduction loss calculation: The calculation formula for the IGBT conduction loss is as follows:

[0038] In the above formula, is the IGBT conduction loss, is the collector-emitter voltage, is the collector current, is the junction temperature, is the IGBT on-state slope resistance.

[0039] In the application scenario of the frequency converter, the current flowing through the IGBT changes in a sine wave manner. Assuming that the IGBT conducts for half a cycle and does not conduct for the other half cycle, the average loss of the IGBT in a sine cycle is as follows:

[0040] Substitute, into the above formula, and among them , the conduction loss of the IGBT is obtained.

[0041] (2)Calculation of IGBT switching loss: Multiplying the collector current curve and the collector-emitter voltage curve can obtain the peak loss power of the IGBT. Integrating the power curve can calculate the turn-on energy . And the switching frequency is multiplied to obtain the turn-on loss of the IGBT .

[0042] The turn-on energy under the rated voltage and current is provided in the IGBT device data sheet, and the calculation formula for the turn-on loss power can be obtained.

[0043] The calculation method of the turn-off loss is the same. Multiplying the two curves of the IGBT collector current and the collector-emitter voltage can obtain the peak loss power, and integrating the power curve to obtain the turn-off energy . And the switching frequency The product of is the switching loss of the IGBT .

[0044] The turn-off energy under the rated voltage and current is provided in the IGBT device data sheet, and the calculation formula for the turn-off loss power can be obtained.

[0045] The total switching loss of the IGBT is:

[0046] (3)Calculation of diode conduction loss The calculation formula for the diode conduction loss is as follows:

[0047] In the above formula, is the diode conduction loss, is the forward voltage drop of the diode, is the forward current of the diode, is the junction temperature.

[0048] In the application scenario of the frequency converter, the current flowing through the diode changes sinusoidally according to the control method. In a sine cycle, assuming that the conduction time and the turn-off time of the diode each account for half of the conduction cycle, after corresponding the diode current to a sine wave, the average conduction loss of the diode within a sine cycle is as follows:

[0049] Among them, , , when using SPWM modulation, the conduction time of the diode:

[0050] The conduction loss of the diode can be calculated.

[0051] (4) Calculation of diode switching loss The loss generated during the turn-on process of the diode is extremely small and is ignored in this embodiment. During the turn-off process of the diode, the decrease of the current and the recovery process of the voltage both require a certain amount of time. Multiplying the two curves can obtain the peak loss power, and integrating within the reverse recovery time can obtain the reverse recovery loss of the diode . In summary, the switching loss of the diode is .

[0052] The IGBT device data sheet provides the reverse recovery loss at the rated voltage and current and specific temperature. The present invention calculates the diode switching loss under the current working conditions by means of linear interpolation.

[0053] In some embodiments of the present invention, the construction of the heat transfer network mathematical model includes: Extracting heat transfer network parameters from the IGBT device parameter data, and constructing the heat transfer network mathematical model based on the heat transfer network parameters and the physical structure of the IGBT device.

[0054] In some embodiments of the present invention, the heat transfer network parameters include: thermal resistance parameters and heat capacity parameters; The heat transfer network mathematical model is used to calculate the temperature change value based on the loss power.

[0055] Specifically, the relationship between the heat power, the thermal resistance and the temperature difference is as follows:

[0056] The heat capacity is similar to the capacitance, and there is the following formula. The unit of the heat capacity is J / K.

[0057]

[0058] Combined with Figure 3In this regard, the present invention adopts a local network model (Foster model), which has no direct association with the actual physical layer and materials. The RC parameters are obtained by measuring the thermal impedance, and there is no need to know the exact material parameters. The number of RC combinations depends on the number of measurement points.

[0059] In some embodiments of the present invention, the IGBT loss simulation model and the heat transfer network simulation model are obtained by converting the IGBT loss mathematical model and the heat transfer network mathematical model based on the Modelica language.

[0060] Specifically, the model is established based on the Modelica language and includes the following parts: The inverter simulation output current analysis module includes an IGBT (including anti-parallel diode) loss calculation module, a heat transfer network module, and a junction temperature display interface.

[0061] The current analysis module and the loss calculation module are integrated together. The power calculation result is output to the thermal network through the thermal interface. The ambient temperature is input at the outermost layer of the heat transfer network, and the calculation result is displayed through the junction temperature display interface.

[0062] The input of the loss calculation module model comes from the output parameters of the system simulation operation. The device parameters and characteristic curves are all taken from the data sheet: (1) Operating condition parameters: DC bus voltage, output current peak value, output current fundamental frequency, power factor, switching frequency, switching tube phase.

[0063] (2) Device parameters (extracted from the device data sheet): IGBT parameters: threshold voltage, forward resistance, rated voltage, rated current, turn-on and turn-off losses under rated voltage and current.

[0064] Diode parameters: threshold voltage, forward resistance, reverse recovery loss under rated voltage and current.

[0065] (3) Thermal circuit parameters: thermal resistance and heat capacity parameters of the fourth-order thermal network model (extracted from the device data sheet), thermal resistance and heat capacity parameters of the device bottom plate contact (the thermal resistance parameter can be extracted from the device data sheet, and the thermal time constant is obtained by calculation), thermal resistance and heat capacity parameters of the water-cooled plate, ambient temperature.

[0066] The present invention can ensure the rapid calculation of IGBT and diode losses and junction temperature while having a certain simulation accuracy, realize the electro-thermal coupling simulation of the IGBT module in system simulation, provide support for system-level multi-physical simulation, and provide support for the selection of IGBT devices and heat dissipation design during the system R & D process.

[0067] To better implement the IGBT dynamic junction temperature simulation method in the ship electric propulsion system in the embodiments of the present invention, correspondingly, based on the IGBT dynamic junction temperature simulation method in the ship electric propulsion system, as Figure 4 shown, the embodiments of the present invention further provide an IGBT dynamic junction temperature simulation device for a ship electric propulsion system. The IGBT dynamic junction temperature simulation device 400 for a ship electric propulsion system includes: An access module 401, configured to access an IGBT loss simulation model and a heat transfer network simulation model to a basic IGBT system simulation model to obtain an improved IGBT system simulation model. The IGBT loss simulation model is used to calculate the loss power of the IGBT, and the heat transfer network simulation model is used to calculate the temperature change value based on the loss power of the IGBT; A simulation module 402, configured to use the ambient temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment as the input of the improved IGBT system simulation model at the current moment, and use the junction temperature output by the improved IGBT system simulation model at the current moment as the simulation result at the current moment.

[0068] The IGBT dynamic junction temperature simulation device 400 for a ship electric propulsion system provided in the above embodiments can implement the technical solutions described in the embodiments of the IGBT dynamic junction temperature simulation method for a ship electric propulsion system. The specific implementation principles of the above modules or units can be referred to the corresponding content in the embodiments of the IGBT dynamic junction temperature simulation method for a ship electric propulsion system, which will not be elaborated here.

[0069] As Figure 5 shown, the present invention correspondingly further provides a simulation device 500. The simulation device 500 includes a processor 501, a memory 502, and a display 503. Figure 5 Only some components of the simulation device 500 are shown, but it should be understood that it is not required to implement all the shown components, and more or fewer components can be alternatively implemented.

[0070] The processor 501 may be a central processing unit (CPU), a microprocessor, or other data processing chips in some embodiments, and is configured to run the program code stored in the memory 502 or process data, such as the magnetic resonance image optimization method in the present invention.

[0071] In some embodiments, the processor 501 may be a single server or a server group. The server group may be centralized or distributed. In some embodiments, the processor 501 may be local or remote. In some embodiments, the processor 501 may be implemented on a cloud platform. In one embodiment, the cloud platform may include a private cloud, a public cloud, a hybrid cloud, a community cloud, a distributed cloud, an internal cloud, a multi-cloud, etc., or any combination of the above.

[0072] In some embodiments, the memory 502 may be an internal storage unit of the simulation device 500, such as the hard disk or memory of the simulation device 500. In some other embodiments, the memory 502 may also be an external storage device of the simulation device 500, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) card, a Flash Card, etc. equipped on the simulation device 500.

[0073] Furthermore, the memory 502 may also include both the internal storage unit and the external storage device of the simulation device 500. The memory 502 is used to store the application software for installing the simulation device 500 and various types of data.

[0074] In some embodiments, the display 503 may be an LED display, a liquid crystal display, a touch liquid crystal display, an Organic Light-Emitting Diode (OLED) toucher, etc. The display 503 is used to display the information in the simulation device 500 and to display the visual user interface. The components 501-503 of the simulation device 500 communicate with each other through the system bus.

[0075] In one embodiment, when the processor 501 executes the IGBT dynamic junction temperature simulation program in the memory 502, the following steps may be implemented: Connect the IGBT loss simulation model and the heat transfer network simulation model to the basic IGBT system simulation model to obtain an improved IGBT system simulation model. The IGBT loss simulation model is used to calculate the loss power of the IGBT, and the heat transfer network simulation model is used to calculate the temperature change value based on the loss power of the IGBT; Use the ambient temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment as the input of the improved IGBT system simulation model at the current moment, and use the junction temperature output by the improved IGBT system simulation model at the current moment as the simulation result at the current moment.

[0076] It should be understood that when the processor 501 executes the IGBT dynamic junction temperature simulation program in the memory 502, in addition to the above functions, other functions may also be implemented. For specific details, reference may be made to the description of the corresponding method embodiments above.

[0077] Further, the embodiments of the present invention do not specifically limit the type of the simulation device 500. The simulation device 500 may be a portable electronic device such as a mobile phone, a tablet computer, a personal digital assistant (PDA), a wearable device, a laptop, etc. Exemplary embodiments of the portable electronic device include, but are not limited to, portable electronic devices equipped with IOS, android, microsoft, or other operating systems. The above portable electronic devices may also be other portable electronic devices, such as a laptop with a touch-sensitive surface (e.g., a touch panel). It should also be understood that in some other embodiments of the present invention, the simulation device 500 may not be a portable electronic device, but a desktop computer with a touch-sensitive surface (e.g., a touch panel).

[0078] Correspondingly, an embodiment of the present application further provides a computer-readable storage medium. The computer-readable storage medium is used to store computer-readable programs or instructions. When the programs or instructions are executed by a processor, the steps or functions in the IGBT dynamic junction temperature simulation method for a ship electric propulsion system provided by the above method embodiments can be implemented.

[0079] Those skilled in the art can understand that all or part of the processes of implementing the methods in the above embodiments can be completed by instructing relevant hardware (such as a processor, a controller, etc.) through a computer program. The computer program can be stored in a computer-readable storage medium. Among them, the computer-readable storage medium is a magnetic disk, an optical disk, a read-only memory, or a random access memory, etc.

[0080] The above has introduced in detail the IGBT dynamic junction temperature simulation method and device for a ship electric propulsion system provided by the present invention. Specific examples are used in this article to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A method for simulating dynamic junction temperature of IGBT in a ship electric propulsion system, characterized in that: include: Connecting an IGBT loss simulation model and a heat transfer network simulation model to a basic IGBT system simulation model to obtain an improved IGBT system simulation model, wherein the IGBT loss simulation model is used to calculate the power loss of the IGBT, and the heat transfer network simulation model is used to calculate the temperature change value based on the power loss of the IGBT; The ambient temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment are used as inputs of the improved IGBT system simulation model at the current moment, and the junction temperature output by the improved IGBT system simulation model at the current moment is used as the simulation result at the current moment.

2. The method for simulating dynamic junction temperature of IGBT of a ship electric propulsion system according to claim 1, characterized in that: The IGBT loss simulation model and the heat transfer network simulation model are obtained by converting the IGBT loss mathematical model and the heat transfer network mathematical model based on computer language. The IGBT loss mathematical model is constructed based on the IGBT device parameter data after parameter fitting, and the heat transfer network mathematical model is constructed based on the IGBT device parameter data and the physical structure of the IGBT device.

3. The method for simulating dynamic junction temperature of IGBT of a ship electric propulsion system according to claim 2, characterized in that: The construction of the IGBT loss mathematical model includes: Performing parameter fitting on the IGBT device parameter data to obtain an IGBT typical characteristic curve; Based on the IGBT typical characteristic curve, the IGBT loss mathematical model is constructed.

4. The method for simulating dynamic junction temperature of IGBT of a ship electric propulsion system according to claim 2, characterized in that: The construction of the heat transfer network mathematical model includes: The heat transfer network parameters are extracted from the IGBT device parameter data, and the heat transfer network mathematical model is constructed based on the heat transfer network parameters and the physical structure of the IGBT device.

5. The method for simulating dynamic junction temperature of IGBT of a ship electric propulsion system according to claim 3, characterized in that: The IGBT typical characteristic curves include output characteristic curve, transfer characteristic curve, switching characteristic curve, dynamic characteristic curve and temperature characteristic curve; The IGBT loss mathematical model is used to calculate IGBT conduction loss, IGBT switching loss, diode conduction loss and diode switching loss.

6. The method for simulating dynamic junction temperature of IGBT of a ship electric propulsion system according to claim 4, characterized in that: The heat transfer network parameters include: thermal resistance parameters and heat capacity parameters; The mathematical model of the heat transfer network is used to calculate the temperature change value based on the power loss.

7. The method for simulating dynamic junction temperature of IGBT of a ship electric propulsion system according to any one of claims 2 to 6, characterized in that: The IGBT loss simulation model and the heat transfer network simulation model are obtained by converting the IGBT loss mathematical model and the heat transfer network mathematical model based on Modelica language.

8. A dynamic junction temperature simulation device for IGBT of a ship electric propulsion system, characterized in that: include: An access module is used to access an IGBT loss simulation model and a heat transfer network simulation model to a basic IGBT system simulation model to obtain an improved IGBT system simulation model, wherein the IGBT loss simulation model is used to calculate the power loss of the IGBT, and the heat transfer network simulation model is used to calculate the temperature change value based on the power loss of the IGBT; The simulation module is used to use the ambient temperature and the junction temperature output by the improved IGBT system simulation model at the previous moment as the input of the improved IGBT system simulation model at the current moment, and use the junction temperature output by the improved IGBT system simulation model at the current moment as the simulation result at the current moment.

9. A simulation device, characterized in that: comprising a memory and a processor, wherein: The memory is used to store programs; The processor is coupled to the memory and is used to execute the program stored in the memory to implement the steps in the method for simulating dynamic junction temperature of IGBT of a ship electric propulsion system as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: Used to store computer-readable programs or instructions, which, when executed by a processor, can implement the steps in the method for simulating dynamic junction temperature of IGBTs in a ship electric propulsion system as described in any one of claims 1 to 7.

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