Wafer heating assembly and wafer processing equipment

Abstract

The invention provides a wafer heating assembly and wafer processing equipment, and belongs to the technical field of semiconductor manufacturing, and the wafer heating assembly comprises a pedestal which is provided with a bearing surface used for bearing a wafer; the induction coil is arranged on the side, away from the bearing face, of the base, the induction coil is configured to heat the base through electromagnetic induction, and the induction coil is of a hollow structure and used for introducing a cooling medium; the adjusting part is detachably connected with the induction coil; wherein the adjusting part is made of a non-ferromagnetic and insulating material, and the surface emissivity of the adjusting part is larger than that of the induction coil. Absorption of heat radiation in the area where the corresponding induction coil is located is increased through the non-ferromagnetic insulating adjusting piece, more heat can be taken away through the cooling medium flowing in the induction coil, the heating temperature of the area, corresponding to the adjusting piece, of the base is reduced, the wafer processing temperature field is adjusted, the wafer heating temperature consistency is promoted, and the wafer processing efficiency is improved. Therefore, the yield of wafer processing is improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and specifically relates to a wafer heating component and a wafer processing device. Background Art

[0002] During the wafer processing, the temperature of the wafer directly determines the efficiency and quality of wafer processing. Good temperature consistency can improve the yield rate of wafer processing.

[0003] Currently, an induction coil is usually installed on the back of the base supporting the wafer. An alternating electromagnetic field is generated at the induction coil through high-frequency alternating current. The alternating electromagnetic field generates eddy currents in the base to heat the base. The base heats the wafer by heat conduction. At the same time, cooling water is passed into the induction coil to prevent the induction coil itself from being heated.

[0004] Due to the limitations of the base processing technology, there are inevitably differences in the thermal conductivity of different areas of the base. At the same time, it is difficult to achieve a uniform heating effect on the base simply by adjusting the position of the induction coil. Summary of the invention

[0005] Purpose of the invention: An embodiment of the present application provides a wafer heating component, aiming to solve the above-mentioned technical problems; another purpose of the present application is to provide a wafer processing device using the above-mentioned wafer heating component.

[0006] Technical solution: A wafer heating assembly provided in an embodiment of the present application includes:

[0007] A base having a bearing surface for bearing a wafer;

[0008] an induction coil, the induction coil being disposed on a side of the base away from the bearing surface, the induction coil being configured to heat the base by electromagnetic induction, the induction coil being a hollow structure for passing a cooling medium;

[0009] An adjusting member, wherein the adjusting member is detachably connected to the induction coil;

[0010] The adjusting member is made of a non-ferromagnetic and insulating material, and the surface emissivity of the adjusting member is greater than the surface emissivity of the induction coil.

[0011] In some embodiments, the surface emissivity of the adjusting member is greater than or equal to 0.3.

[0012] In some embodiments, the adjusting member includes a sheet-shaped main body, and when the adjusting member is assembled to the induction coil, the main body is located between the induction coil and the base;

[0013] The main body portion includes an upper surface facing the base, and the surface emissivity of the upper surface of the main body portion is greater than or equal to 0.3.

[0014] In some embodiments, the thermal conductivity of the adjusting member is greater than or equal to 10 W / (m·k).

[0015] In some embodiments, the material of the adjusting member is one or more of boron nitride ceramic, alumina ceramic, silicon boride ceramic, silicon carbide ceramic, and silicon nitride ceramic.

[0016] In some embodiments, the surface emissivity of the induction coil is less than 0.1.

[0017] In some embodiments, the base is arranged in a disk shape, the bearing surface has a plurality of bearing grooves for respectively bearing wafers, and the bearing grooves are arranged at intervals along the circumferential direction of the base;

[0018] Along the thickness direction of the base, the adjusting member is arranged on a part of the induction coil that is directly opposite to the bearing area.

[0019] In some embodiments, the wafer heating assembly further includes a support member, the support member is connected to the base, and the support member can drive the base to rotate around the disk center of the base;

[0020] When the base rotates, the bearing groove has an annular movement path, and taking the thickness direction of the base as the projection direction, the projection of the adjusting member on the bearing surface in the projection direction is located within the annular movement path.

[0021] In some embodiments, the adjusting member has a receiving groove, and at least a part of the induction coil is located in the receiving groove;

[0022] The receiving groove includes an inner bottom surface, the induction coil has a first surface facing the base, and the first surface abuts against the inner bottom surface.

[0023] Correspondingly, an embodiment of the present application provides a wafer processing device, including a reaction chamber and the wafer heating assembly as described above, and the wafer heating assembly is arranged in the reaction chamber.

[0024] Beneficial effect: The wafer heating assembly of the embodiment of the present application includes a base, an induction coil and an adjustment member, the base has a bearing surface for bearing the wafer, the induction coil is arranged on the side of the base away from the bearing surface, the induction coil is configured to heat the base by electromagnetic induction, the induction coil is a hollow structure for passing a cooling medium, the adjustment member is detachably connected to the induction coil, the material of the adjustment member is a non-ferromagnetic and insulating material, and the surface emissivity of the adjustment member is greater than the surface emissivity of the induction coil. According to the needs, the position where the base heating temperature is relatively high is confirmed, and the adjustment member is installed on the corresponding induction coil, so as to increase the surface emissivity of the corresponding area on the induction coil without affecting the distribution of the magnetic flux lines of the induction coil, thereby increasing the absorption of thermal radiation by the area where the adjustment member is located, which is conducive to taking away more heat through the cooling medium flowing in the induction coil, so that the heating temperature of the base corresponding to the adjustment member area is reduced, and the wafer processing temperature field is adjusted to promote the consistency of the wafer heating temperature, so as to improve the yield rate of wafer processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 is a structural schematic diagram of a wafer processing device according to an embodiment of the present application;

[0027] Figure 2 It is a schematic diagram of the arrangement structure of the bearing area, the induction coil and the adjustment member in the embodiment of the present application;

[0028] Figure 3 It is a schematic diagram of the rotation direction of the base and the temperature measurement direction of the bearing area in the embodiment of the present application;

[0029] Figure 4 is a schematic diagram of the structure of the induction coil and the adjustment member of the embodiment of the present application;

[0030] Figure 5 It is a schematic diagram of the structure of the adjusting member of the embodiment of the present application;

[0031] Figure 6 This is a schematic diagram of the effect of the embodiment of the present application for reflecting the temperature consistency before and after adjustment;

[0032] Reference numerals: 1, base; 10, bearing surface; 11, bearing area; 110, bearing groove; 2, induction coil; 20, first surface; 21, second surface; 22, third surface; 3, adjusting member; 30, accommodating groove; 300, inner bottom surface; 31, first part; 32, second part; 33, main body part; 4, wafer; 5, reaction chamber; 6, support member; X, thickness direction; Y, rotation direction; Z, temperature measuring wire. Detailed implementation manners

[0033] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present application.

[0034] In the description of the present application, it should be understood that in the description of the present application, it should be understood that the terms "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, "a plurality" means two or more, and at least one means one, two or more, unless otherwise specifically defined.

[0035] The applicant notes that during the wafer processing, the temperature of the wafer directly determines the efficiency and quality of the wafer processing, and good temperature consistency can improve the yield of the wafer processing.

[0036] Currently, an induction coil is usually provided on the back of the base for carrying the wafer, and electromagnetic induction is generated at the induction coil through a high-frequency alternating current to heat the base. The base is usually made of, for example, graphite sintering. The electromagnetic induction phenomenon forms eddy currents at the base, so that the base generates heat. The base heats the wafer by means of heat conduction. At the same time, cooling water is introduced into the induction coil to prevent the induction coil itself from being heated.

[0037] However, first, the magnetic field generated by the induction coil cannot ensure uniformity at the base, resulting in uneven heat distribution on the substrate.

[0038] Second, due to the limitation of the base processing technology, the thermal conductivity of each area of ​​the base is inevitably different;

[0039] Third, after the induction coil is installed on the back side of the base supporting the wafer, simply adjusting the position of the induction coil will affect the overall magnetic field distribution, making it impossible to achieve targeted temperature field adjustment at some locations, making it difficult to achieve uniform heating of the base, and adjusting the position of the induction coil is also more troublesome.

[0040] In view of this, combined with Figures 1 to 6 , an embodiment of the present application provides a wafer heating component, aiming to overcome at least one of the above-mentioned technical problems.

[0041] Reference Figures 1 to 5 The wafer heating assembly includes a base 1, an induction coil 2 and an adjustment member 3. The base 1 has a carrying surface 10 for carrying a wafer 4. The induction coil 2 is arranged on a side of the base 1 away from the carrying surface 10. The induction coil 2 is configured to heat the base 1 by electromagnetic induction. The induction coil 2 is a hollow structure for passing a cooling medium. The adjustment member 3 is detachably connected to the induction coil 2. The material of the adjustment member 3 is a non-ferromagnetic and insulating material, and the surface emissivity of the adjustment member 3 is greater than the surface emissivity of the induction coil 2.

[0042] The temperature measuring equipment can be used to detect and confirm the area of ​​the carrying surface 10 with relatively high temperature in the heating state, and then the adjusting part 3 is installed on the induction coil 2 corresponding to the side of the base 1 away from the carrying surface 10, so as to increase the surface emissivity of the area with relatively high temperature corresponding to the induction coil 2, thereby increasing the absorption of thermal radiation by the area where the adjusting part 3 is located, which is beneficial for the cooling medium flowing in the induction coil 2 to take away more heat, so that the temperature of the area of ​​the base 1 facing the adjusting part 3 is reduced, thereby adjusting the processing temperature field of the wafer 4, promoting the consistency of the heating temperature of the wafer 4, and improving the yield rate of the wafer 4 processing.

[0043] In addition, the adjustment member 3 made of non-ferromagnetic and insulating materials will not affect the distribution of magnetic flux lines of the induction coil 2, thereby avoiding changing the magnetic field distribution when the induction coil 2 is powered on.

[0044] Specifically, in some embodiments, the surface emissivity of the adjusting member 3 is greater than or equal to 0.3. Correspondingly, in some embodiments, the surface emissivity of the induction coil 2 is less than 0.1 to avoid the induction coil 2 absorbing too much thermal radiation, thereby avoiding heat loss. It should be noted that the main material of the induction coil 2 can be copper. To improve the corrosion resistance of the induction coil 2, a corrosion-resistant film layer, such as a gold plating layer, is plated on the surface of the induction coil 2. In this embodiment, taking the induction coil 2 plated with a gold plating layer as an example, the surface emissivity of the induction coil 2 in this embodiment is actually the surface emissivity of the gold plating layer, and the surface emissivity of the gold plating layer is between 0.02 and 0.04, and hardly absorbs thermal radiation.

[0045] It can be understood that there is a large difference in emissivity between the adjusting member 3 and the induction coil 2, ensuring that the adjusting member 3 has sufficient adjustment effect, that is, it can more effectively increase the absorption of thermal radiation in the area where it is located, and achieve effective targeted temperature field adjustment.

[0046] On this basis, in some embodiments, the thermal conductivity of the adjusting member 3 is greater than or equal to 10 W / (m·k). It can be understood that on the basis of ensuring a large difference in emissivity between the adjusting member 3 and the induction coil 2, further ensuring that the adjusting member 3 has a large thermal conductivity, thereby ensuring that the adjusting member 3 has sufficient heat dissipation effect and improving the temperature adjustment effect in the area where the adjusting member 3 is located. Specifically, after the adjusting member 3 is assembled to the induction coil 2, heat is mainly transferred between the adjusting member 3 and the induction coil 2 in the form of heat conduction. The larger the thermal conductivity of the adjusting member, the more conducive it is to conduct the absorbed radiant heat to the induction coil 2, so as to take away this part of the heat through the cooling medium in the induction coil 2 and improve the temperature adjustment effect in the area where the adjusting member 3 is located.

[0047] In some embodiments, the material of the adjusting member 3 can be one or more of boron nitride ceramic, alumina ceramic, silicon boride ceramic, silicon carbide ceramic, and silicon nitride ceramic.

[0048] In addition, in some embodiments, the coverage area of the adjusting member 3 on the induction coil 2 can also be flexibly adjusted as needed. It can be understood that as the coverage area of the adjusting member 3 on the induction coil 2 increases, the corresponding temperature adjustment effect of the adjusting member 3 is better, and the corresponding temperature adjustment range of the base 1 is also larger. In this case, the adjusting member 3 is set to be a plurality of smaller sizes, and the coverage area of the adjusting member 3 on the induction coil 2 is increased or decreased based on the number of the adjusting members 3 assembled along the circumference of the induction coil 2.

[0049] In addition, in some embodiments, the surface emissivity of the adjusting member 3 can be flexibly adjusted as needed, that is, a plurality of adjusting members 3 with different materials or different surface properties are correspondingly provided to provide a plurality of adjusting members 3 with different surface emissivities. It can be understood that as the emissivity of the adjusting member 3 increases, the corresponding temperature adjustment effect of the adjusting member 3 is better, and the corresponding adjustment temperature range of the base 1 is also larger.

[0050] In addition, in some embodiments, the number of the adjusting members 3 can be flexibly increased or decreased as needed, that is, when there are multiple heating areas to be adjusted on the corresponding base 1, a plurality of adjusting members 3 can also be provided and arranged in one-to-one correspondence.

[0051] In some embodiments, referring to Figures 1 to 3 , the base 1 is arranged in a disc shape, and the bearing surface 10 has a plurality of bearing grooves 110 for respectively bearing the wafers 4. The bearing grooves 110 are arranged at intervals along the circumferential direction of the base 1, and the plurality of bearing grooves 110 form an annular bearing area 11 in the circumferential direction. Specifically, in this embodiment, the number of the bearing grooves 110 is set to 8, and the 8 bearing grooves 110 are arranged at equal intervals around the disc center of the base 1 in the circumferential direction. In other embodiments, according to the needs such as the size specifications of the base 1 and the wafers 4, the number of the bearing grooves 110 can be flexibly increased or decreased.

[0052] Correspondingly, referring to Figure 1 and Figure 2 , along the thickness direction X of the base 1, the adjusting member 3 is arranged on a part of the induction coil 2 corresponding to the position of the bearing area 11. It can be understood that the bearing groove 110 area is the effective heating area of the base 1 for the wafers 4, and the adjusting member 3 needs to be arranged on the induction coil 2 corresponding to the position where the bearing groove 110 is located.

[0053] In some embodiments, referring to Figure 1 and Figure 3 , the wafer heating assembly further includes a support member 6. The support member 6 is connected to the disc center of the base 1, and the support member 6 can drive the base 1 to rotate around the disc center of the base 1, that is, the rotation direction Y as shown in Figure 3 . When the base 1 rotates, the bearing groove 110 has an annular movement path. Taking the thickness direction X of the base 1 as the projection direction, the projection of the adjusting member 3 on the bearing surface 10 in the projection direction is located within the annular movement path.

[0054] It can be understood that by rotating the base 1, the adjusting member 3 can adjust the heating area of the bearing surface 10 located within the above-mentioned annular movement path. Finally, the temperature of the wafer 4 is adjusted by region to ensure the uniformity of the surface temperature of the wafer 4.

[0055] It should be noted that as shown in Figure 3As shown by the temperature measurement line Z in the figure, when the base 1 heats the wafer 4, the base 1 rotates around its axis in the counterclockwise direction. At the same time, the wafer 4 can rotate around its axis in the counterclockwise direction. The temperature of the current wafer 4 and the heating area of the base 1 is measured along the temperature measurement line Z by a temperature measurement device. In this state, the temperature distribution from the edge to the center and then back to the edge of the wafer 4 can be obtained.

[0056] In some embodiments, referring to Figure 1 、 Figure 4 and Figure 5 the adjusting member 3 has a receiving groove 30, and the induction coil 2 is at least partially located in the receiving groove 30. The receiving groove 30 includes an inner bottom surface 300. The induction coil 2 has a first surface 20 facing the base 1, and the first surface 20 abuts against the inner bottom surface 300.

[0057] Specifically, the adjusting member 3 includes a first part 31, a second part 32 arranged at intervals, and a main body part 33 connected between the first part 31 and the second part 32. The first part 31, the second part 32 and the main body part 33 enclose the receiving groove 30, and the inner bottom surface 300 is also the side surface of the main body part 33 facing the opening of the receiving groove 30. The first part 31, the second part 32 and the main body part 33 can be integrally formed.

[0058] In some embodiments, the adjusting member 3 may further include at least a sheet-shaped main body part 33, which can be configured as the above-mentioned main body part 33. When the adjusting member 3 is assembled to the induction coil 2, the main body part 33 is located between the induction coil 2 and the base 1; the main body part 33 includes an upper surface facing the base 1, and the surface emissivity of the upper surface of the main body part 33 is not less than 0.3.

[0059] The induction coil 2 further has a second surface 21 and a third surface 22 facing away from each other. The first surface 20 is connected between the second surface 21 and the third surface 22, and the first surface 20 faces the base 1. The second surface 21 faces the first part 31, the third surface 22 faces the second part 32, and the first surface 20 is partially covered by the main body part 33 (or the above-mentioned main body part) of the adjusting member 3. That is, the overall adjusting member 3 can be designed as a structural member with a U-shaped cross-section and partially cover the induction coil 2. This structural design facilitates quickly hanging the adjusting member 3 onto the induction coil 2. In other embodiments, the adjusting member 3 can also be designed as two split parts connected to circumferentially cover the induction coil 2, etc., which will not be elaborated here one by one.

[0060] Exemplarily, referring to Figure 2 、 Figure 4 and Figure 6, in this embodiment, taking the case where the heating temperature of the base 1 corresponding to the third turn of the induction coil 2 from the outside to the inside is relatively high as an example, by arranging the adjusting member 3 in the corresponding area to adjust the heat radiation absorption capacity and heat dissipation effect of this part of the induction coil 2, the temperature of this area of the base 1 can be effectively reduced, which is beneficial to improving the consistency of the heating temperature of the wafer 4. In other embodiments, the adjusting member 3 can be flexibly arranged and the number of adjusting members 3 can be increased or decreased according to the actual heating temperature difference area of the base 1.

[0061] Correspondingly, an embodiment of the present application provides a wafer processing device, referring to Figure 1 , including a reaction chamber 5 and the wafer heating component as described above. The wafer heating component is arranged in the reaction chamber 5. During the process of heating the wafer 4, reaction gases and the like also need to be introduced into the reaction chamber 5. It can be understood that this wafer processing device can have all the technical features and corresponding beneficial effects of the above wafer heating component, which will not be elaborated here.

[0062] The above has introduced in detail a wafer heating component and a wafer processing device provided by the embodiments of the present application, and specific examples have been used to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A wafer heating component, characterized in that, Comprising: A base (1), the base (1) having a bearing surface (10) for bearing a wafer (4); An induction coil (2), the induction coil (2) being provided on a side of the base (1) facing away from the bearing surface (10), the induction coil (2) being configured to be able to heat the base (1) by electromagnetic induction, the induction coil (2) being a hollow structure for introducing a cooling medium; An adjusting member (3), the adjusting member (3) being detachably connected to the induction coil (2); Wherein, the material of the adjusting member (3) is a non-ferromagnetic and insulating material, and the surface emissivity of the adjusting member (3) is greater than the surface emissivity of the induction coil (2).

2. The wafer heating assembly according to claim 1, wherein The surface emissivity of the adjusting member (3) is greater than or equal to 0.

3.

3. The wafer heating assembly according to claim 2, wherein The adjusting member (3) includes a sheet-shaped main body portion (33), when the adjusting member (3) is assembled to the induction coil (2), the main body portion (33) is located between the induction coil (2) and the base (1); The main body portion (33) includes an upper surface facing the base (1), and the surface emissivity of the upper surface of the main body portion (33) is greater than or equal to 0.

3.

4. The wafer heating assembly according to claim 1, wherein The thermal conductivity of the adjusting member (3) is greater than or equal to 10 W / (m·k).

5. The wafer heating assembly according to claim 1, wherein The material of the adjusting member (3) is one or more of boron nitride ceramic, alumina ceramic, silicon boride ceramic, silicon carbide ceramic, and silicon nitride ceramic.

6. The wafer heating component according to claim 1, characterized in that, The surface emissivity of the induction coil (2) is less than 0.

1.

7. The wafer heating assembly according to any one of claims 1 to 6, wherein The base (1) is arranged in a disc shape, the bearing surface (10) has a plurality of bearing grooves (110) for respectively bearing wafers (4), and the bearing grooves (110) are arranged at intervals along the circumferential direction of the base (1); Along the thickness direction (X) of the base (1), the adjusting member (3) is provided on a part of the induction coil (2) facing the position of the bearing groove (110).

8. The wafer heating assembly according to claim 7, wherein The wafer heating assembly further includes a support member (6), the support member (6) is connected to the base (1), and the support member (6) can drive the base (1) to rotate around the disc center of the base (1); When the base (1) rotates, the bearing groove (110) has an annular movement path, taking the thickness direction (X) of the base (1) as the projection direction, the projection of the adjusting member (3) on the bearing surface (10) in the projection direction is located within the annular movement path.

9. The wafer heating assembly according to any one of claims 1 to 6, wherein The adjusting member (3) has a receiving groove (30), and at least a part of the induction coil (2) is located in the receiving groove (30); The receiving groove (30) includes an inner bottom surface (300), the induction coil (2) has a first surface (20) facing the base (1), and the first surface (20) abuts against the inner bottom surface (300).

10. A wafer processing apparatus, characterized in that, It includes a reaction chamber (5) and a wafer heating assembly as described in any one of claims 1 to 9, and the wafer heating assembly is arranged in the reaction chamber (5).

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