Plasma etching device for semiconductor wafer

Abstract

The present invention relates to the technical field of semiconductor wafer processing, and in particular to a plasma etching device for semiconductor wafers. The device comprises a base plate and a device body fixedly mounted on the top of the base plate. A sealing cover is fixedly mounted on the side of the device body, a driving motor is arranged inside the sealing cover, a placement plate for carrying the semiconductor wafer is fixedly mounted on the output end of the driving motor, and a cleaning mechanism for cleaning the semiconductor wafer is arranged above the placement plate. The extended end of the cylinder is controlled to be retracted to the shortest point, so that the piston slides up to above the output end of the feed pipe, oxygen plasma is ejected from the output ends of a first nozzle and a second nozzle, and the driving motor is turned on to rotate the semiconductor wafer. The oxygen plasma is blown to the side of the semiconductor wafer through the second nozzle, which helps to improve the discharge of volatile by-products generated during the cleaning process, prevents secondary pollution, and better cleans the sidewalls of the semiconductor wafer and reduces sidewall deposition.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer processing, in particular to a plasma etching device for semiconductor wafers. Background Art

[0002] Semiconductor wafer plasma etching equipment is a key device in semiconductor manufacturing. It uses plasma technology to achieve high-precision and highly selective material removal and is widely used in pattern transfer and structure processing in chip manufacturing. Plasma etching is a dry etching technology that uses active particles in the plasma to chemically react or physically bombard the material on the surface of the semiconductor wafer to achieve material removal.

[0003] Before working, existing plasma etching devices are prone to the presence of particles and metal impurities on the surface of semiconductor wafers, making them difficult to clean and affecting the product quality and yield of semiconductor wafers. At the same time, during the cleaning process of semiconductor wafers, oxygen plasma is blown vertically to the semiconductor wafers for a long time, which can easily cause physical damage to the surface of the semiconductor wafers and affect sensitive materials or patterns. Summary of the Invention

[0004] The technical problems solved by this solution are:

[0005] How to solve the problem that long-term vertical oxygen plasma blowing on semiconductor wafers during cleaning can easily cause physical damage to the semiconductor wafer surface and affect sensitive materials or patterns?

[0006] How to solve the problem that particles and metal impurities are easily present on the surface of semiconductor wafers, making it inconvenient to clean them and affecting the product quality and yield of semiconductor wafers?

[0007] The objectives of the present invention can be achieved by the following technical solution: A plasma etching device for semiconductor wafers, comprising a base plate and a device body fixedly mounted on the top of the base plate, a sealing cover fixedly mounted on the side of the device body, a drive motor disposed inside the sealing cover, the drive motor being fixedly connected to the base plate, and a placement plate for supporting the semiconductor wafer fixedly mounted on the output end of the drive motor, a cleaning mechanism for cleaning the semiconductor wafer disposed above the placement plate;

[0008] The cleaning mechanism includes a regulating cylinder fixedly connected to the top of the inner wall of the sealing cover. The regulating cylinder is arranged longitudinally, and a piston is slidably arranged on the inner wall of the regulating cylinder. A lifting rod is fixedly installed on the bottom of the piston, and the bottom end of the lifting rod is movable through the regulating cylinder. A side blowing unit for cleaning the side wall of the chip is provided on one side of the regulating cylinder.

[0009] A further technical improvement of the present invention is that two guide frames are provided on the other side of the control cylinder, both of the guide frames are fixedly connected to the inner wall of the sealing cover, and a first nozzle is movably inserted in the middle of the two guide frames, the output end of the first nozzle is toward the middle of the placement plate, and the top of the first nozzle is connected to a first hose, and the input end of the first hose is connected to the middle of the side of the control cylinder.

[0010] A further technical improvement of the present invention is that a vacuum discharge tooling for producing oxygen plasma is fixedly provided on the top of the sealing cover, the vacuum discharge tooling is existing technology, and the output end of the vacuum discharge tooling is connected to a feed pipe, the output end of the feed pipe passes through the sealing cover and is connected to the middle and upper part of the side of the regulating cylinder, a control valve is fixedly installed in the middle of the feed pipe, and the bottom of the regulating cylinder is connected to a second hose.

[0011] A further technical improvement of the present invention is that a longitudinally arranged cylinder is fixedly mounted on the top of the sealing cover, and the extended end of the cylinder is movable and extends into the control cylinder and is fixedly connected to the piston. By controlling the extended end of the cylinder to be retracted to its shortest position, the piston slides upward to above the output end of the feed pipe, and oxygen plasma is ejected from the output ends of the first and second nozzles. The drive motor is then turned on to rotate the semiconductor wafer, and oxygen plasma is blown to the side of the semiconductor wafer through the second nozzle, which helps to improve the discharge of volatile byproducts generated during the cleaning process, prevent secondary contamination, and better clean the sidewalls of the semiconductor wafer and reduce sidewall deposition. At this time, as the piston slides upward, the lifting rod and fixed pin rise, driving the L-shaped plate to flip, causing the lifting seat to drive the second nozzle to descend, and the first nozzle to rise. The oxygen plasma ejected by the first and second nozzles cooperates with each other to reduce the physical impact of the first nozzle on the surface of the semiconductor wafer. The rise of the first nozzle moves the output end of the first nozzle away from the semiconductor wafer, which also reduces the physical impact of the first nozzle on the semiconductor wafer surface, helping to protect sensitive materials or patterns.

[0012] A further technical improvement of the present invention is that the side blowing unit includes a lifting seat that is slidably connected to the inner wall of the sealing cover through a guide rail, and a second nozzle is fixedly inserted inside the lifting seat. The output end of the second nozzle is inclined and faces the placement plate, and the input end of the second nozzle is connected to the output end of the second hose.

[0013] A further technical improvement of the present invention is that an L-shaped plate is rotatably provided on the inner wall of the sealing cover, the front of the lifting seat is movably connected to one end of the L-shaped plate through a first lever, and the middle part of the first nozzle is movably connected to the other end of the L-shaped plate through a second lever.

[0014] A further technical improvement of the present invention is that a fixing pin is fixedly installed at the bottom of the lifting rod, the fixing pin is slidably connected to the end of the L-shaped plate close to the first shifting rod, and the fixing pin is located below the L-shaped plate.

[0015] A further technical improvement of the present invention lies in that: a fixing plate is fixedly installed on the inner wall of the sealing cover, and a tension spring is fixedly connected between the bottom of the fixing plate and the top of the lifting seat; by controlling the extended end of the cylinder to extend from half the length to the longest, the piston slides down to block the input end of the second hose, and then the vacuum discharge tooling and the control valve are opened to allow the generated oxygen plasma to be injected into the first nozzle. During the process of the piston sliding down, the lifting rod drives the fixed pin to move downward. At this time, the lifting seat drives the second nozzle to rise through the tension of the tension spring, and cooperates with the L-shaped plate to drive the first nozzle to descend, so that its output end is close to the semiconductor wafer, so that the oxygen plasma blown out from the first nozzle can clean the surface of the semiconductor wafer to prevent particles and metal impurities from being affected.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] When the present invention is in use, the extended end of the cylinder is controlled to be retracted to the shortest point, so that the piston slides up to above the output end of the feed pipe, and oxygen plasma is ejected from the output ends of the first nozzle and the second nozzle. Then, the drive motor is turned on to rotate the semiconductor wafer, and oxygen plasma is blown to the side of the semiconductor wafer through the second nozzle, which helps to improve the discharge of volatile by-products generated during the cleaning process and prevent secondary contamination. At the same time, it better cleans the sidewalls of the semiconductor wafer and reduces sidewall deposition. At this time, due to the upward sliding of the piston, the lifting rod and the fixed pin are lifted and the L-shaped plate is flipped, so that the lifting seat drives the second nozzle to descend, and the first nozzle is lifted. The oxygen plasma ejected by the first nozzle and the second nozzle cooperate with each other, which can reduce the physical impact of the first nozzle on the surface of the semiconductor wafer. The first nozzle is lifted, so that the output end of the first nozzle is away from the semiconductor wafer, which can also reduce the physical impact of the first nozzle on the surface of the semiconductor wafer, which helps to protect sensitive materials or patterns.

[0018] When the present invention is in use, the extended end of the cylinder is controlled to extend from half its length to its longest length, the piston slides down to block the input end of the second hose, and then the vacuum discharge tooling and the control valve are opened to allow the generated oxygen plasma to be injected into the first nozzle. During the process of the piston sliding down, the lifting rod drives the fixing pin to move downward. At this time, the lifting seat drives the second nozzle to rise through the tension of the tension spring, and cooperates with the L-shaped plate to drive the first nozzle to descend, so that its output end is close to the semiconductor wafer, so that the oxygen plasma blown out from the first nozzle can clean the surface of the semiconductor wafer to remove particles and metal impurities, thereby preventing the product quality and yield of the semiconductor wafer from being affected. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] To facilitate understanding by those skilled in the art, the present invention is further described below with reference to the accompanying drawings.

[0020] Figure 1 It is a three-dimensional schematic diagram of the overall structure of the present invention;

[0021] Figure 2 It is a schematic cross-sectional view of the overall structure of the present invention;

[0022] Figure 3 This is a schematic diagram of the cleaning mechanism structure of the present invention;

[0023] Figure 4 It is a schematic three-dimensional diagram of the cleaning mechanism structure of the present invention;

[0024] Figure 5 This is a schematic structural diagram of the side-blowing unit of the present invention;

[0025] Figure 6 It is a three-dimensional schematic diagram of the side blowing unit structure of the present invention.

[0026] In the figure: 1. Device body; 2. Sealing cover; 3. Sealing door; 4. Bottom plate; 5. Vacuum discharge tooling; 6. Recovery tooling; 7. Electric push rod; 8. Opening and closing door; 9. Cleaning mechanism; 10. Driving motor; 11. Placement plate; 901. Cylinder; 902. Piston; 903. First hose; 904. Second lever; 905. Guide frame; 906. First nozzle; 907. Side blowing unit; 908. Feed pipe; 909. Control cylinder; 910. Lifting rod; 911. Second hose; 912. Control valve; 9071. L-shaped plate; 9072. Fixing pin; 9073. Second nozzle; 9074. Guide rail; 9075. First lever; 9076. Lifting seat; 9077. Fixing plate. DETAILED DESCRIPTION

[0027] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0028] See also Figures 1-6As shown, a plasma etching device for semiconductor wafers includes a base plate 4 and a device body 1 fixedly mounted on the top thereof, a sealing cover 2 is fixedly mounted on the side of the device body 1, a driving motor 10 is arranged inside the sealing cover 2, the driving motor 10 is fixedly connected to the base plate 4, and a placement plate 11 for carrying semiconductor wafers is fixedly mounted on the output end of the driving motor 10, and a cleaning mechanism 9 for cleaning semiconductor wafers is arranged above the placement plate 11.

[0029] See also Figure 2 and Figure 3 As shown, the above-mentioned cleaning mechanism 9 includes a regulating cylinder 909 fixedly connected to the top of the inner wall of the sealing cover 2, the regulating cylinder 909 is arranged longitudinally, and a piston 902 is slidingly arranged on the inner wall of the regulating cylinder 909, and a lifting rod 910 is fixedly installed on the bottom of the piston 902, and the bottom end of the lifting rod 910 is movable through the regulating cylinder 909, and a side blowing unit 907 for cleaning the side wall of the chip is arranged on one side of the regulating cylinder 909.

[0030] See also Figure 3 and Figure 4 As shown, two guide frames 905 are provided on the other side of the above-mentioned control cylinder 909, and the two guide frames 905 are fixedly connected to the inner wall of the sealing cover 2, and the middle part of the two guide frames 905 is movably inserted with a first nozzle 906, the output end of the first nozzle 906 is toward the middle part of the placement plate 11, and the top of the first nozzle 906 is connected to the first hose 903, and the input end of the first hose 903 is connected to the middle part of the side of the control cylinder 909.

[0031] See also Figure 3 and Figure 4 As shown, a vacuum discharge tooling 5 for producing oxygen plasma is fixedly provided on the top of the above-mentioned sealing cover 2. The vacuum discharge tooling 5 is a prior art, and the output end of the vacuum discharge tooling 5 is connected to a feed pipe 908. The output end of the feed pipe 908 passes through the sealing cover 2 and is connected to the middle and upper part of the side of the regulating cylinder 909. A control valve 912 is fixedly installed in the middle of the feed pipe 908, and the bottom of the regulating cylinder 909 is connected to a second hose 911.

[0032] See also Figure 3 and Figure 4As shown, a longitudinally arranged cylinder 901 is fixedly installed on the top of the sealing cover 2, and the extended end of the cylinder 901 is movable and penetrates into the regulating cylinder 909 and is fixedly connected to the piston 902; by controlling the extended end of the cylinder 901 to be contracted to the shortest, the piston 902 slides up to above the output end of the feed pipe 908, and oxygen plasma is ejected from the output ends of the first nozzle 906 and the second nozzle 9073, and then the drive motor 10 is turned on to rotate the semiconductor wafer, and oxygen plasma is blown to the side of the semiconductor wafer through the second nozzle 9073, which helps to improve the discharge of volatile by-products generated during the cleaning process, prevent secondary pollution, and better clean the semiconductor wafer. The sidewalls of the semiconductor wafer are cleaned and sidewall deposition is reduced. At this time, as the piston 902 slides upward, the lifting rod 910 and the fixing pin 9072 rise, driving the L-shaped plate 9071 to flip, so that the lifting seat 9076 drives the second nozzle 9073 to descend, and the first nozzle 906 rises. The oxygen plasma ejected by the first nozzle 906 and the second nozzle 9073 cooperates with each other, which can reduce the physical impact of the first nozzle 906 on the surface of the semiconductor wafer. In addition, the first nozzle 906 rises, so that the output end of the first nozzle 906 is away from the semiconductor wafer, which can also reduce the physical impact of the first nozzle 906 on the surface of the semiconductor wafer, thereby helping to protect sensitive materials or patterns.

[0033] See also Figure 5 and Figure 6 As shown, the above-mentioned side blowing unit 907 includes a lifting seat 9076 that is slidably connected to the inner wall of the sealing cover 2 through a guide rail 9074, and a second nozzle 9073 is fixedly inserted inside the lifting seat 9076. The output end of the second nozzle 9073 is tilted and faces the placement plate 11, and the input end of the second nozzle 9073 is connected to the output end of the second hose 911.

[0034] See also Figure 5 and Figure 6 As shown, an L-shaped plate 9071 is rotatably provided on the inner wall of the above-mentioned sealing cover 2, the front of the lifting seat 9076 is movably connected to one end of the L-shaped plate 9071 through a first lever 9075, and the middle part of the first nozzle 906 is movably connected to the other end of the L-shaped plate 9071 through a second lever 904.

[0035] See also Figure 5 As shown, a fixing pin 9072 is fixedly installed at the bottom of the above-mentioned lifting rod 910. The fixing pin 9072 is slidably connected to the end of the L-shaped plate 9071 close to the first shift rod 9075, and the fixing pin 9072 is located below the L-shaped plate 9071.

[0036] See also Figure 3 and Figure 5As shown, a fixing plate 9077 is fixedly installed on the inner wall of the sealing cover 2, and a tension spring is fixedly connected between the bottom of the fixing plate 9077 and the top of the lifting seat 9076; by controlling the extended end of the cylinder 901 to extend from half its length to the longest, the piston 902 slides down to block the input end of the second hose 911, and then the vacuum discharge tooling 5 and the control valve 912 are opened, so that the generated oxygen plasma is injected into the first nozzle 906. During the downward movement of the piston 902, the lifting rod 910 drives the fixing pin 9072 to move downward. At this time, the tension of the tension spring causes the lifting seat 9076 to drive the second nozzle 9073 to rise, and cooperates with the L-shaped plate 9071 to drive the first nozzle 906 to descend, so that its output end is close to the semiconductor wafer, so that the oxygen plasma blown out from the first nozzle 906 can clean the surface of the semiconductor wafer to prevent particles and metal impurities from being affected in the product quality and yield of the semiconductor wafer.

[0037] See also Figure 2 As shown, a recovery tool 6 for collecting exhaust gas is fixedly installed on the top of the sealing cover 2. The recovery tool 6 is a prior art, and the input end of the recovery tool 6 is connected to the sealing cover 2.

[0038] See also Figure 2 As shown, the device body 1 is hinged with an opening and closing door 8 on the side facing the sealing cover 2, and an electric push rod 7 is rotatably provided on the top of the inner wall of the sealing cover 2, and the extended end of the electric push rod 7 is rotatably connected to the outer wall of the opening and closing door 8.

[0039] See also Figure 1 As shown, a sealing door 3 is hinged on the front of the sealing cover 2 , and the sealing door 3 corresponds to the position of the placement plate 11 .

[0040] Working principle: When the present invention is used, first, Figure 1 and Figure 2 As shown, first open the sealing door 3 and place the semiconductor wafer on the top of the placement plate 11. At this time, close the sealing door 3. Figure 3 As shown, the extended end of the cylinder 901 is at half its length, the piston 902 blocks the output end of the feed pipe 908, and the recovery tool 6 is opened to facilitate the collection of waste gas generated when cleaning the semiconductor wafer by the recovery tool 6; Figure 3 and Figure 4 As shown, the extended end of the control cylinder 901 is extended from half its length to its longest length, the piston 902 slides down to block the input end of the second hose 911, and then the vacuum discharge tool 5 and the control valve 912 are opened, so that the generated oxygen plasma is injected into the control cylinder 909 along the feed pipe 908, and then injected into the first nozzle 906 through the first hose 903. During the process of the piston 902 sliding down, as shown in FIG. Figure 3 and Figure 5As shown, the lifting rod 910 drives the fixing pin 9072 to move downward. At this time, the lifting seat 9076 drives the second nozzle 9073 to rise through the tension of the tension spring, and cooperates with the L-shaped plate 9071 to drive the first nozzle 906 to descend, so that its output end is close to the semiconductor wafer, so that the oxygen plasma blown from the first nozzle 906 can clean the surface of the semiconductor wafer to prevent particles and metal impurities from being affected in the product quality and yield of the semiconductor wafer. After the first nozzle 906 blows oxygen plasma for a period of time, as shown in FIG. Figure 3 and Figure 5 As shown, by controlling the extended end of the cylinder 901 to be contracted to the shortest, the piston 902 slides up to above the output end of the feed pipe 908, and the oxygen plasma entering the control cylinder 909 is ejected from the output ends of the first nozzle 906 and the second nozzle 9073. Then, the drive motor 10 is turned on to rotate the semiconductor wafer, and the oxygen plasma is blown to the side of the semiconductor wafer through the second nozzle 9073, which helps to improve the discharge of volatile by-products generated during the cleaning process, prevent secondary contamination, and better clean the sidewalls of the semiconductor wafer to reduce sidewall deposition. Figure 3 、 Figure 5 and Figure 6 As shown, at this time, as the piston 902 slides upward, the lifting rod 910 and the fixing pin 9072 rise, driving the L-shaped plate 9071 to flip, so that the lifting seat 9076 drives the second nozzle 9073 to descend, and the first nozzle 906 rises. The oxygen plasma ejected by the first nozzle 906 and the second nozzle 9073 cooperates with each other, which can reduce the physical impact of the first nozzle 906 on the surface of the semiconductor wafer. In addition, the first nozzle 906 rises, so that the output end of the first nozzle 906 is away from the semiconductor wafer, which can also reduce the physical impact of the first nozzle 906 on the surface of the semiconductor wafer, which helps to protect sensitive materials or patterns. Figure 1 and Figure 2 As shown, after the semiconductor wafer is cleaned, the extended end of the electric push rod 7 is retracted to the shortest, the opening and closing door 8 is opened, and the semiconductor wafer is placed inside the device body 1. The opening and closing door 8 is closed in time to perform plasma etching operation on the semiconductor wafer.

[0041] The above description is merely a preferred embodiment of the present invention and does not constitute any form of limitation to the present invention. Although the present invention has been disclosed as above in terms of a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can, without departing from the scope of the technical solution of the present invention, make some changes or modifications to equivalent embodiments using the technical contents disclosed above. However, any brief modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A plasma etching device for semiconductor wafers, comprising a base plate (4) and a device body (1) fixedly mounted on the top thereof, wherein a sealing cover (2) is fixedly mounted on the side of the device body (1), characterized in that: A driving motor (10) is provided inside the sealing cover (2); a placement plate (11) for carrying semiconductor wafers is fixedly mounted on the output end of the driving motor (10); a cleaning mechanism (9) for cleaning semiconductor wafers is provided above the placement plate (11); The cleaning mechanism (9) includes a control cylinder (909) fixedly connected to the inner wall of the sealing cover (2), a piston (902) is slidably provided on the inner wall of the control cylinder (909), a lifting rod (910) is fixedly installed on the bottom of the piston (902), and the bottom end of the lifting rod (910) movably passes through the control cylinder (909), and a side blowing unit (907) for cleaning the side wall of the wafer is provided on one side of the control cylinder (909); Two guide frames (905) are provided on the other side of the control cylinder (909), and a first nozzle (906) is movably inserted in the middle of the two guide frames (905), the output end of the first nozzle (906) faces the middle of the placement plate (11), and the top of the first nozzle (906) is connected to a first hose (903), and the input end of the first hose (903) is connected to the middle of the side of the control cylinder (909); the side blowing unit (907) includes a lifting seat (9076) slidably connected to the inner wall of the sealing cover (2), and the lifting seat ( A second nozzle (9073) is fixedly inserted into the interior of the sealing cover (9076), the output end of the second nozzle (9073) is tilted and faces the placement plate (11), and the input end of the second nozzle (9073) is connected to the output end of the second hose (911), an L-shaped plate (9071) is rotatably provided on the inner wall of the sealing cover (2), the front of the lifting seat (9076) is movably connected to one end of the L-shaped plate (9071) through a first shifting rod (9075), and the middle part of the first nozzle (906) is movably connected to the other end of the L-shaped plate (9071).

2. A plasma etching device for semiconductor wafers according to claim 1, characterized in that: A vacuum discharge tool (5) for producing oxygen plasma is fixedly provided on the top of the sealing cover (2), and the output end of the vacuum discharge tool (5) is connected to a feed pipe (908). The output end of the feed pipe (908) passes through the sealing cover (2) and is connected to the middle and upper part of the side of the regulating cylinder (909). A control valve (912) is fixedly installed in the middle of the feed pipe (908), and the bottom of the regulating cylinder (909) is connected to a second hose (911).

3. A plasma etching device for semiconductor wafers according to claim 1, characterized in that: A cylinder (901) is fixedly mounted on the top of the sealing cover (2), and the extended end of the cylinder (901) is movably inserted into the regulating cylinder (909) and is fixedly connected to the piston (902).

4. A plasma etching device for semiconductor wafers according to claim 1, characterized in that: A fixing pin (9072) is fixedly installed at the bottom of the lifting rod (910), and the fixing pin (9072) is slidably connected to the end of the L-shaped plate (9071) close to the first shifting rod (9075), and the fixing pin (9072) is located below the L-shaped plate (9071).

5. The plasma etching device for semiconductor wafers according to claim 1, characterized in that: A fixing plate (9077) is fixedly mounted on the inner wall of the sealing cover (2), and a tension spring is fixedly connected between the bottom of the fixing plate (9077) and the top of the lifting seat (9076).

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