Semiconductor module equipped with heat dissipation system
By adopting a multi-layer heat dissipation structure made of non-conductive and conductive materials in the semiconductor module, combined with fastening and bonding technology, the problem of insufficient insulation between semiconductor components and the heat dissipation system is solved, and the combination of efficient heat dissipation and insulation reliability is achieved.
Patent Information
- Application Number
- CN202410735135.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-12-29
- Filing Date
- 2024-06-07
- Publication Date
- 2025-07-01
AI Technical Summary
While maintaining the heat dissipation efficiency of the heat dissipation system, it ensures the insulation reliability between the semiconductor components and the heat dissipation system, and prevents short circuit between the terminal terminal and the heat dissipation system.
The heat dissipation parts of more than four sections of non-conductive materials and conductive materials are surrounded by semiconductor components, and are combined with each other through fastening components, thread bonding, adhesive or laser or ultrasonic welding to ensure the insulation distance and block short circuits.
While maintaining efficient heat dissipation, ensure the insulation reliability between semiconductor components and the heat dissipation system, prevent short circuits, and improve the reliability and safety of the system.
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Figure CN120237100A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor module equipped with a heat dissipation system, and more particularly, to a semiconductor module equipped with a heat dissipation system that can ensure insulation reliability between a semiconductor component and the heat dissipation system while maintaining the heat dissipation efficiency of the heat dissipation system. Background Art
[0002] Generally, electrical and electronic components, especially semiconductor components, generate a considerable amount of heat during operation. Therefore, heat sinks or cooling systems are applied to prevent overheating and thus maintain the operating performance.
[0003] In particular, semiconductor components applied to high-power application fields can effectively prevent overheating by means of a cooling system that circulates a coolant.
[0004] For example, compared with existing silicon power semiconductors, wide bandgap (WBG) power semiconductor devices can improve thermal characteristics, high-speed switching, high voltage / high current characteristics, and minimize switching losses, etc. As a result, system miniaturization can be achieved and power efficiency can be improved. Therefore, global power module companies are actively producing semiconductor components (power modules) that apply WBG power semiconductor devices.
[0005] Since the junction temperature of semiconductor components that apply WBG power semiconductor devices including such SiC power semiconductor devices is 175°C or higher, the semiconductor components have a double-sided cooling (DSC) structure to achieve effective heat dissipation and adopt a direct cooling method through the heat dissipation system.
[0006] In addition, as Figure 1 shown, considering thermal conductivity, when the upper and lower bodies 11 and 12 of the heat dissipation system (Water Jack) are made of existing metal materials, as the semiconductor component 13 becomes more highly integrated and higher in power, there is a problem that the terminal terminals 14 of the semiconductor component break through the air insulation and short-circuit with the upper and lower metal bodies 11 and 12.
[0007] Therefore, there is a need to develop a technology that can ensure insulation reliability between a semiconductor component and the heat dissipation system while maintaining the heat dissipation efficiency.
[0008]
Prior Art Documents
[0009] Patent Document 1: Korean Patent Publication No. 10-2019-0133156 (Semiconductor Cooling Arrangement, December 2, 2019.)
[0010] Patent Document 2: Korean Patent Gazette No. 10-1472642 (Cooling Module for Cooling Electronic Components, announced on December 15, 2014) Summary of the Invention
[0011] The technical problem to be solved by the idea of the present invention is to provide a semiconductor module equipped with a heat dissipation system that can ensure the insulation reliability between the semiconductor component and the heat dissipation system while maintaining the heat dissipation efficiency of the heat dissipation system.
[0012] To achieve the above object, an embodiment of the present invention provides a semiconductor module equipped with a heat dissipation system, including: one or more semiconductor components, including one or more terminal terminals extending outward to be electrically connected to other components; an upper first heat dissipation component combined with the upper part of the semiconductor component; a lower first heat dissipation component facing the upper first heat dissipation component and combined with the lower part of the semiconductor component; an upper second heat dissipation component joined to the upper part of the upper first heat dissipation component; and a lower second heat dissipation component joined to the lower part of the lower first heat dissipation component, wherein a coolant for cooling the heat generated by the semiconductor component flows between the upper first heat dissipation component and the upper second heat dissipation component or between the lower first heat dissipation component and the lower second heat dissipation component, one or more holes for the coolant to flow in and out are formed in the upper second heat dissipation component or the lower second heat dissipation component, and one or more of the upper first heat dissipation component, the lower first heat dissipation component, the upper second heat dissipation component, and the lower second heat dissipation component are made of different materials.
[0013] Herein, the upper first heat dissipation component and the upper second heat dissipation component may be made of different materials from each other, or the lower first heat dissipation component and the lower second heat dissipation component may be made of different materials from each other.
[0014] Moreover, the upper first heat dissipation component and the lower first heat dissipation component may be made of non-conductive materials, and the upper second heat dissipation component and the lower second heat dissipation component may be made of conductive materials.
[0015] At this time, the semiconductor component may include: an insulating substrate; one or more semiconductor chips mounted on the insulating substrate; a molding case covering the semiconductor chips; and the terminal terminals extending outward from the molding case, wherein a part or all of the insulating substrate may be made in a double-sided heat dissipation structure exposed from the molding case.
[0016] And, the insulating substrate may contain one or more materials of Al2O3, AlN, and Si3N4.
[0017] Moreover, the upper heat dissipation component formed by the upper first heat dissipation component and the upper second heat dissipation component and the lower heat dissipation component formed by the lower first heat dissipation component and the lower second heat dissipation component can be fastened to each other by fastening components.
[0018] Moreover, the upper heat dissipation component formed by the upper first heat dissipation component and the upper second heat dissipation component and the lower heat dissipation component formed by the lower first heat dissipation component and the lower second heat dissipation component can be fastened to each other by screw engagement.
[0019] Moreover, the upper heat dissipation component formed by the upper first heat dissipation component and the upper second heat dissipation component and the lower heat dissipation component formed by the lower first heat dissipation component and the lower second heat dissipation component can be joined to each other by an adhesive.
[0020] Moreover, the upper heat dissipation component formed by the upper first heat dissipation component and the upper second heat dissipation component and the lower heat dissipation component formed by the lower first heat dissipation component and the lower second heat dissipation component can be joined to each other by laser or ultrasonic welding.
[0021] Moreover, an upper joining unit may be interposed between the upper surface of the upper first heat dissipation component and the semiconductor component, and a lower joining unit may be interposed between the lower surface of the lower first heat dissipation component and the semiconductor component.
[0022] Herein, the upper joining unit or the lower joining unit may be an O-ring made of an elastic material.
[0023] Alternatively, the upper joining unit or the lower joining unit may be in a paste form and, while curing at a predetermined temperature, the semiconductor component may be joined to the upper first heat dissipation component and the lower first heat dissipation component.
[0024] Moreover, a plurality of heat dissipation pins arranged in a specific pattern may be formed upright on one or more of the upper surface and the lower surface of the semiconductor component.
[0025] Moreover, the upper first heat dissipation component or the lower first heat dissipation component may be made of an insulating material.
[0026] Moreover, the flow rate of the refrigerant flowing in the first flow path formed between the upper first heat dissipation component and the upper second heat dissipation component or in the second flow path formed between the lower first heat dissipation component and the lower second heat dissipation component may be 5 L / m to 20 L / m.
[0027] Moreover, the semiconductor chip may be a semiconductor including one or more materials among GaN, SiC, and Ga2O3.
[0028] Moreover, the weight of the upper first heat dissipation component or the lower first heat dissipation component may be less than the weight of the upper second heat dissipation component or the lower second heat dissipation component.
[0029] Moreover, the semiconductor components may be grouped into three to drive a three-phase motor.
[0030] Moreover, a first concave portion may be formed on the upper part of the upper first heat dissipation component, and a first convex portion corresponding to the first concave portion may be formed on the lower part of the upper second heat dissipation component to engage with each other. Also, a second concave portion may be formed on the lower part of the lower first heat dissipation component, and a second convex portion corresponding to the second concave portion may be formed on the upper part of the lower second heat dissipation component to engage with each other.
[0031] Moreover, a first concave portion may be formed on the upper part of the upper first heat dissipation component, and a first O-ring may be introduced into the first concave portion. A second concave portion may be formed on the lower part of the lower first heat dissipation component, and a second O-ring may be introduced into the second concave portion.
[0032] Moreover, a first concave portion may be formed on the upper part of the upper first heat dissipation component, and the first concave portion may be filled with a first adhesive. A second concave portion may be formed on the lower part of the lower first heat dissipation component, and the second concave portion may be filled with a second adhesive.
[0033] Moreover, a first hook may be formed along the upper edge of the upper first heat dissipation component, and a first hook hole corresponding to the first hook may be formed on the lower part of the upper second heat dissipation component. A second hook may be formed along the lower edge of the lower first heat dissipation component, and a second hook hole corresponding to the second hook may be formed on the upper part of the lower second heat dissipation component.
[0034] Here, the size of each of the first hook hole and the second hook hole may be formed to be larger than the size of each of the first hook and the second hook, and an O-ring may be embedded in each of the first hook hole and the second hook hole.
[0035] At this time, the fastening structure between the first hook hole and the first hook and the fastening structure between the second hook hole and the second hook may be made into a fastening structure in a cylindrical shape, a fastening structure in a hexahedron shape, or an engaging structure in a specific shape.
[0036] Moreover, the upper first heat dissipation component and the lower first heat dissipation component may be formed into a structure that faces each other and covers the semiconductor component, the upper second heat dissipation component may be formed into a structure that surrounds the upper first heat dissipation component, and the lower second heat dissipation component may be formed into a structure that surrounds the lower first heat dissipation component.
[0037] At this time, the upper first heat dissipation component and the lower first heat dissipation component may be separately disposed at openings formed at both ends of the terminal terminals extending outward from the outer side of the molding case of the semiconductor component.
[0038] According to the present invention, a semiconductor module equipped with a heat dissipation system is configured by surrounding a semiconductor component with four or more heat dissipation components made of non-conductive materials and conductive materials. While maintaining the heat dissipation efficiency of the heat dissipation system, the insulation distance from the terminal terminals of the high-density and high-power semiconductor component is ensured, thereby blocking an accidental short-circuit phenomenon caused by air insulation breakdown between the terminal terminals and the heat dissipation system. Therefore, it has the effect of being able to ensure the insulation reliability between the semiconductor component and the heat dissipation system. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] Figure 1 Illustrates a semiconductor module equipped with a heat dissipation system according to the prior art.
[0040] Figure 2 Shows a semiconductor module equipped with a heat dissipation system according to a first embodiment of the present invention.
[0041] Figure 3 Illustrates Figure 2 the cross-sectional structure of a semiconductor module equipped with a heat dissipation system.
[0042] Figure 4 And Figure 5 respectively illustrate Figure 2 an exploded view of an example of a semiconductor module equipped with a heat dissipation system.
[0043] Figure 6 Illustrates Figure 2 an exploded view of another example of a semiconductor module equipped with a heat dissipation system.
[0044] Figure 7 respectively illustrate Figure 2 the schematic cross-sectional views of a semiconductor module equipped with a heat dissipation system.
[0045] Figure 8 Illustrates a front view of a semiconductor module equipped with a heat dissipation system according to a second embodiment.
[0046] Figure 9 Shows separation Figure 8Diagram of the upper and lower covers of a semiconductor module equipped with a heat dissipation system.
[0047] Description of reference numerals
[0048] 110: Semiconductor component 111: Insulating substrate
[0049] 112: Adhesive 113: Semiconductor chip
[0050] 114: Molded housing 115: Spacer
[0051] 116: Heat dissipation pin 117: Terminal
[0052] 120: Upper first heat dissipation component 121: Recess
[0053] 122: Hook 130: Lower first heat dissipation component
[0054] 131: Groove 132: Recess
[0055] 133: Hook 140: Upper second heat dissipation component
[0056] 141: Hook hole 150: Lower second heat dissipation component
[0057] 151: Hook hole 161: First flow path
[0058] 162: Second flow path 171: Fastening component
[0059] 172: Upper bonding unit 173: Lower bonding unit Detailed description of the embodiment
[0060] Hereinafter, embodiments of the present invention having the above characteristics will be described in more detail with reference to the accompanying drawings.
[0061] A semiconductor module equipped with a heat dissipation system according to an embodiment of the present invention includes: one or more semiconductor components 110 including one or more terminal terminals 117 extending outward to be electrically connected to other components; an upper first heat dissipation component 120 coupled to the upper portion of the semiconductor component 110; a lower first heat dissipation component 130 facing the upper first heat dissipation component 120 and coupled to the lower portion of the semiconductor component 110; an upper second heat dissipation component 140 joined to the upper portion of the upper first heat dissipation component 120; and a lower second heat dissipation component 150 joined to the lower portion of the lower first heat dissipation component 130, wherein a coolant for cooling the heat generated by the semiconductor component 110 flows between the upper first heat dissipation component 120 and the upper second heat dissipation component 140 and / or between the lower first heat dissipation component 130 and the lower second heat dissipation component 150, one or more holes for the coolant to flow in and out are formed in the upper second heat dissipation component 140 and / or the lower second heat dissipation component 150, and one or more of the upper first heat dissipation component 120, the lower first heat dissipation component 130, the upper second heat dissipation component 140, and the lower second heat dissipation component 150 are made of different materials, so as to ensure the insulation reliability between the semiconductor component 110 and the heat dissipation system while maintaining the heat dissipation efficiency of the heat dissipation system.
[0062] At this time, the upper first heat dissipation component 120 and the upper second heat dissipation component 140 may be made of different materials from each other, or the lower first heat dissipation component 130 and the lower second heat dissipation component 150 may be made of different materials from each other.
[0063] For example, the upper second heat dissipation component 140, the lower first heat dissipation component 130, and the lower second heat dissipation component 150 except for the upper first heat dissipation component 120 may be made of the same material, or the upper first heat dissipation component 120, the upper second heat dissipation component 140, and the lower second heat dissipation component 150 except for the lower first heat dissipation component 130 may also be made of the same material.
[0064] However, it is not limited thereto, and the materials of the upper first heat dissipation component 120, the upper second heat dissipation component 140, the lower first heat dissipation component 130, and the lower second heat dissipation component 150 may be composed of different materials by various combinations. This is because the heat dissipation system according to the embodiment of the present invention described later adopts a double-sided heat dissipation structure and a direct cooling method, thereby bringing excellent heat dissipation effects compared with the prior art, and thus increasing the degree of freedom in selecting materials.
[0065] In particular, in a semiconductor module equipped with a heat dissipation system according to a preferred embodiment of the present invention, the upper first heat dissipation member 120 and the lower first heat dissipation member 130 may be made of a non-conductive material, and the upper second heat dissipation member 140 and the lower second heat dissipation member 150 may be made of a conductive material.
[0066] Hereinafter, with reference to Figures 2 to 9 , the semiconductor module equipped with the heat dissipation system having the above structure will be described in detail as follows.
[0067] First, with reference to Figures 3 to 6 , one or more semiconductor components 110 are configured and disposed between the upper first heat dissipation member 120 and the lower first heat dissipation member 130.
[0068] Specifically, as shown in Figure 7 , the semiconductor component 110 may be configured to include: an insulating substrate 111; one or more semiconductor chips 113 sandwiched and mounted on the insulating substrate 111; a molding case 114 covering the semiconductor chips 113; and terminal terminals 117 extending outward from the molding case 114. Among them, a part or all of the insulating substrate 111 is made in a double-sided heat dissipation structure (dual side cooling) and a structure of a direct cooling method (a structure in which at least a part of the insulating substrate is exposed from the molding case and directly contacts a coolant to dissipate heat), so that the heat dissipation efficiency can be improved.
[0069] Moreover, the semiconductor components 110 may be grouped into three for driving a three-phase motor.
[0070] Here, the insulating substrate 111 is composed of an upper substrate 111a and a lower substrate 111b, and a spacer 115 is interposed between the upper substrate 111a and the lower substrate 111b. The semiconductor chips 113 may be mounted on the upper substrate 111a, the lower substrate 111b, or both the upper substrate 111a and the lower substrate 111b.
[0071] Moreover, the spacer 115 may be a metal post or a clip structure.
[0072] Moreover, the insulating substrate may include one or more materials among Al2O3, AlN, and Si3N4.
[0073] Moreover, with reference to Figure 7 , the upper substrate 111a and / or the lower substrate 111b may have a structure in which one or more lower metal layers, an insulating layer, and one or more upper metal layers are sequentially stacked.
[0074] Moreover, the semiconductor chip 113 can be a compound semiconductor including one or more materials among GaN, SiC, and Ga2O3. For example, it can be a semiconductor chip for power conversion. As described above, the semiconductor component 110 can drive a three-phase motor, or it can also be a device such as an inverter, converter, or on-board charger (OBC) that converts or controls power. And during the process of converting power into other power such as a specific current, specific voltage, or specific frequency, a considerable amount of heat is generated. Therefore, cooling can be performed by the heat dissipation system of this embodiment.
[0075] In addition, the heat dissipation system of this embodiment can be constituted by a coolant circulating in the flow paths formed between the upper first heat dissipation component 120 and the upper second heat dissipation component 140, between the lower first heat dissipation component 130 and the lower second heat dissipation component 150, and / or between the upper first heat dissipation component 120 and the lower first heat dissipation component 130. However, it is not particularly limited thereto, and it can also be constituted by four or more stages.
[0076] That is, referring to Figures 2 to 6 , the upper first heat dissipation component 120 is combined with the upper part of the semiconductor component 110, and the lower first heat dissipation component 130 faces the upper first heat dissipation component 120 and is combined with the lower part of the semiconductor component 110, so that the heat generated by the semiconductor component 110 is dissipated by conduction.
[0077] Here, the upper first heat dissipation component 120 and the lower first heat dissipation component 130 are made of a non-conductive material to ensure the insulation distance from the terminal terminals 117 of the high-density and high-power semiconductor component 110. As in the prior art, in the case of being constituted by a conductive material of metal, an accidental short-circuit phenomenon with the terminal terminals 117 of the semiconductor component 110 can be blocked, thereby ensuring the electrical reliability between the semiconductor component 110 and the heat dissipation system.
[0078] Moreover, the upper first heat dissipation component 120 and the lower first heat dissipation component 130 can be made of an insulating material to maintain an insulation distance of more than a predetermined interval distance from the semiconductor component 110, thereby ensuring insulation.
[0079] At this time, since the upper first heat dissipation component 120 and the lower first heat dissipation component 130 are non-conductive materials, a high heat-resistant resin capable of withstanding 200 °C or more can be applied.
[0080] Next, referring to Figures 2 to 6 , the upper second heat dissipation component 140 is joined to the upper part of the upper first heat dissipation component 120, and the lower second heat dissipation component 150 is joined to the lower part of the lower first heat dissipation component 130.
[0081] Referring to Figure 3 and Figure 7 , with the structure of the heat dissipation system as described above, the coolant for cooling the heat generated by the semiconductor component 110 flows between the upper first heat dissipation component 120 and the upper second heat dissipation component 140 and / or between the lower first heat dissipation component 130 and the lower second heat dissipation component 150, and one or more holes H for the coolant to flow in and out are formed in the upper second heat dissipation component 140 and / or the lower second heat dissipation component 150.
[0082] Moreover, the flow rate of the coolant flowing in the first flow path 161 formed between the upper first heat dissipation component 120 and the upper second heat dissipation component 140 or in the second flow path 162 formed between the lower first heat dissipation component 130 and the lower second heat dissipation component 150 can be 5 L / m to 20 L / m. This is because if the flow rate of the coolant is less than 5 L / m, due to the relatively slow flow rate, the cooling efficiency is reduced due to the residual heat effect. If the flow rate of the coolant exceeds 20 L / m, the heat absorption efficiency may be reduced due to the relatively fast flow rate, and as a result, the cooling efficiency may be reduced. Therefore, preferably, the flow rate of the coolant can be 5 L / m to 20 L / m.
[0083] And, referring to Figure 3 and Figure 7 , on the upper surface, lower surface or both the upper and lower surfaces of the semiconductor component 110, a plurality of heat dissipation pins 116 arranged in a specific pattern are formed upright and structurally exposed, so as to expand the contact area with the coolant to improve the heat dissipation efficiency. Since the structure of the direct cooling method by the heat dissipation pins 116 can maximize the cooling efficiency, the upper first heat dissipation component 120 and the lower first heat dissipation component 130 covering the semiconductor component 110 do not need to be made of a conductive material, and the range of material selection for the heat dissipation component becomes wider, so various materials can be applied.
[0084] In addition, the upper second heat dissipation component 140 and the lower second heat dissipation component 150 can be made of a conductive material so that the heat conducted from the semiconductor component 110 contacts the external air, thereby improving the heat dissipation efficiency.
[0085] Figure 4 and Figure 5 respectively illustrate Figure 2 an exploded view of an example of a semiconductor module equipped with a heat dissipation system. Referring to this, the upper heat dissipation component composed of the upper first heat dissipation component 120 and the upper second heat dissipation component 140 and the lower heat dissipation component composed of the lower first heat dissipation component 130 and the lower second heat dissipation component 150 can be fastened and fixed to each other by fastening components 171 such as bolts.
[0086] Specifically, the upper heat dissipation component composed of the upper first heat dissipation component 120 and the upper second heat dissipation component 140 and the lower heat dissipation component composed of the lower first heat dissipation component 130 and the lower second heat dissipation component 150 can be fastened to each other by screw connection, or combined with each other by an adhesive, or combined with each other by laser or ultrasonic welding methods.
[0087] Moreover, an upper bonding unit 172 is interposed between the upper surface of the upper first heat dissipation component 120 and the semiconductor component 110, and a lower bonding unit 173 is interposed between the lower surface of the lower first heat dissipation component 130 and the semiconductor component 110. The upper bonding unit 172 or the lower bonding unit 173 can be an O-ring made of an elastic material, so that the watertightness between the semiconductor component 110 and the heat dissipation system can be improved according to the direct cooling method.
[0088] Or, Figure 6 illustrates Figure 2 an exploded view of another example of a semiconductor module equipped with a heat dissipation system. The upper bonding unit 172 or the lower bonding unit 173 is an adhesive in paste form, which can be filled in a groove (not shown) formed on the lower surface of the upper first heat dissipation component 120 facing the semiconductor component 110, or the groove 131 on the upper surface of the lower first heat dissipation component 130 facing the semiconductor component 110 and bonded, so that they can be adhered to each other and made watertight while preventing the leakage of the adhesive.
[0089] That is, the adhesive in paste form is filled in the groove 131 and cured in an oven at a predetermined temperature (for example, at a temperature above 15°C, preferably at a temperature between 15°C and 150°C), so that the semiconductor component 110, the upper first heat dissipation component 120, and the lower first heat dissipation component 130 can be joined to each other.
[0090] Thus, different from the above-mentioned example, the semiconductor component 110, the upper first heat dissipation component 120, and the lower first heat dissipation component 130 can be made watertight without an O-ring, and an oven can be used to shorten the curing time, or they can be joined to each other within 24 hours at room temperature.
[0091] In addition, it can also be applied in a form in which an exemplary O-ring and an adhesive in a paste form are mixed. That is, the mutual bonding and watertight structure between the semiconductor component 110 and the upper first heat dissipation component 120 and the lower first heat dissipation component 130 through the adhesive, or the watertight structure between the semiconductor component 110 and the upper first heat dissipation component 120 and the lower first heat dissipation component 130 through the O-ring, and the mutual fastening structure between the upper first heat dissipation component 120 and the upper second heat dissipation component 140 and between the lower first heat dissipation component 130 and the lower second heat dissipation component 150 through bolts or the like can be combined and applied.
[0092] And, referring to Figure 4 and Figure 5 , a concave portion 121 may be formed on the upper portion of the upper first heat dissipation component 120, and a convex portion (not shown) corresponding to the concave portion 121 may be formed on the lower portion of the upper second heat dissipation component 140. The watertightness can be improved by the mutual engagement of the concave portion 121 and the convex portion, or an O-ring (not shown) may be introduced into the concave portion 121 to further improve the watertightness, or a paste-shaped binder may be filled in the concave portion 121 to be mutually bonded to improve the watertightness while preventing the leakage of the binder.
[0093] This mutual engagement structure of the concave portion 121 and the convex portion can also be similarly applied between the concave portion 132 of the lower first heat dissipation component 130 and the convex portion (not shown) of the lower second heat dissipation component 150, thereby improving the watertightness or preventing the leakage phenomenon.
[0094] And, hooks 122 are formed along the upper edge of the upper first heat dissipation component 120, and hook holes 141 corresponding to the hooks 122 are formed on the lower portion of the upper second heat dissipation component 140, and the hook holes 141 are aligned and fastened to each other. Hooks 133 are formed along the lower edge of the lower first heat dissipation component 130, and hook holes 151 corresponding to the hooks 133 are formed on the upper portion of the lower second heat dissipation component 150, and the hook holes 151 are aligned and fastened to each other, thereby improving the watertightness.
[0095] Here, the formation positions of the hooks 122, 133 and the hook holes 141, 151 may also be reversed, and the shapes of the hooks 122, 133 and the hook holes 141, 151 may be made using a cylindrical fastening structure, but it is not limited thereto. A hexahedron-shaped fastening structure may also be used, that is, a fastening structure in which a hollow hexahedron-shaped hook hole and a hexagonal prism-shaped hook are formed, character shape and character-shaped engagement structure.
[0096] Also, the sizes of the hook holes 141 and 151 can be formed to be relatively larger than the sizes of the hooks 122 and 133. After separately embedding O-rings in the hook holes 141 and 151, the hooks 122 and 133 can be fastened to further ensure water tightness.
[0097] Also, the weight of the upper first heat dissipation member 120 or the lower first heat dissipation member 130 can be configured to be less than that of the upper second heat dissipation member 140 or the lower second heat dissipation member 150, so that the overall weight of the heat dissipation system can be reduced.
[0098] Specifically, the weight of the upper first heat dissipation member 120 can be less than the weight of the upper second heat dissipation member 140, or the weight of the lower first heat dissipation member 130 can be less than the weight of the lower second heat dissipation member 150. The sum of the weights of the upper first heat dissipation member 120 and the lower first heat dissipation member 130 can be less than the sum of the weights of the upper second heat dissipation member 140 and the lower second heat dissipation member 150.
[0099] In addition, Figure 8 FIG. shows a front view of a semiconductor module equipped with a heat dissipation system according to the second embodiment. Figure 9 Shows the separation Figure 8 FIG. shows the upper cover and the lower cover of a semiconductor module equipped with a heat dissipation system. Referring to this, the upper first heat dissipation member 120 and the lower first heat dissipation member 130 made of a non-conductive material are formed to face each other and cover the semiconductor component 110, and are formed such that the upper second heat dissipation member 140 surrounds the upper first heat dissipation member 120, and the lower second heat dissipation member 150 surrounds the lower first heat dissipation member 130, so that the upper first heat dissipation member 120 and the lower first heat dissipation member 130 cover the semiconductor component 110 with the minimum area, thereby maximizing the heat dissipation efficiency while blocking the short-circuit phenomenon between the terminal terminals 117 and the heat dissipation system.
[0100] That is, referring to Figure 9 , the upper first heat dissipation member 120 and the lower first heat dissipation member 130 are separately arranged at the openings A at both ends of the terminal terminals 117 formed to extend outside the molded case of the semiconductor component 110. The non-conductive material is used to insulate only the minimum area close to the terminal terminals 117, thereby maximizing the heat dissipation efficiency while blocking the short circuit between the terminal terminals 14 and the heat dissipation system in the proximity area, and thus ensuring the insulation reliability between the semiconductor component 110 and the heat dissipation system.
[0101] Therefore, by configuring the semiconductor module equipped with the heat dissipation system as described above, which is configured by surrounding the semiconductor component with four or more heat dissipation components made of non-conductive materials and conductive materials, while maintaining the heat dissipation efficiency of the heat dissipation system, the insulation distance from the terminal terminals of the semiconductor component with high density and high power is ensured, thereby blocking the accidental short-circuit phenomenon caused by the air insulation breakdown between the terminal terminals and the heat dissipation system. Therefore, the insulation reliability between the semiconductor component and the heat dissipation system can be ensured.
[0102] The embodiments described in this specification and the structures shown in the drawings are only the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, it should be understood that there can be various equivalents and modification examples that can replace these at the time of this application.
Claims
1. A semiconductor module equipped with a heat dissipation system, characterized in that: include: One or more semiconductor components, including one or more terminal terminals extending outwardly and electrically connected to other components; An upper first heat dissipation component is combined with an upper portion of the semiconductor component; A lower first heat dissipation component, facing the upper first heat dissipation component and combined with the lower part of the semiconductor component; an upper second heat dissipation component, coupled to an upper portion of the upper first heat dissipation component; as well as A lower second heat dissipation component is joined to the lower portion of the lower first heat dissipation component, wherein a coolant for cooling the heat generated by the semiconductor component flows between the upper first heat dissipation component and the upper second heat dissipation component or between the lower first heat dissipation component and the lower second heat dissipation component, One or more holes for coolant to flow in and out are formed in the upper second heat dissipation component or the lower second heat dissipation component. At least one of the upper first heat dissipation part, the lower first heat dissipation part, the upper second heat dissipation part, and the lower second heat dissipation part is made of different materials.
2. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: The upper first heat dissipation component and the upper second heat dissipation component are made of different materials from each other. Alternatively, the lower first heat dissipation part and the lower second heat dissipation part are made of different materials.
3. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: The upper first heat dissipation component and the lower first heat dissipation component are made of non-conductive material, and the upper second heat dissipation component and the lower second heat dissipation component are made of conductive material.
4. The semiconductor module equipped with a heat dissipation system according to claim 2 or 3, characterized in that: The semiconductor component comprises: Insulating substrate; One or more semiconductor chips are mounted on the insulating substrate; a molded case covering the semiconductor chip; and The terminal terminal extends outward from the molded housing. Part or all of the insulating substrate is made of a double-sided heat dissipation structure exposed from the molded housing.
5. The semiconductor module equipped with a heat dissipation system according to claim 4, characterized in that: The insulating substrate includes one or more materials selected from the group consisting of Al2O3, AlN and Si3N4.
6. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: An upper heat sink member formed by the upper first heat sink member and the upper second heat sink member and a lower heat sink member formed by the lower first heat sink member and the lower second heat sink member are fastened to each other by a fastening member.
7. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: An upper heat sink composed of the upper first heat sink and the upper second heat sink, and a lower heat sink composed of the lower first heat sink and the lower second heat sink are fastened to each other by screwing.
8. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: An upper heat sink composed of the upper first heat sink and the upper second heat sink, and a lower heat sink composed of the lower first heat sink and the lower second heat sink are bonded to each other by an adhesive.
9. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: The upper heat dissipation component formed by the upper first heat dissipation component and the upper second heat dissipation component and the lower heat dissipation component formed by the lower first heat dissipation component and the lower second heat dissipation component are combined with each other by laser or ultrasonic welding.
10. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: An upper bonding unit is sandwiched between the upper first heat dissipation component and the upper surface of the semiconductor component. A lower bonding unit is interposed between the lower first heat dissipation component and the lower surface of the semiconductor component.
11. The semiconductor module equipped with a heat dissipation system according to claim 10, characterized in that: The upper engaging unit or the lower engaging unit is an O-ring of elastic material.
12. The semiconductor module equipped with a heat dissipation system according to claim 10, characterized in that: The upper bonding unit or the lower bonding unit is in a paste form, The semiconductor component and the upper first heat sink component and the lower first heat sink component are bonded to each other while being cured at a predetermined temperature.
13. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: A plurality of heat dissipation pins arranged in a specific pattern are upright formed on at least one of the upper surface and the lower surface of the semiconductor component.
14. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: The upper first heat dissipation component or the lower first heat dissipation component is made of insulating material.
15. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: A flow rate of the refrigerant flowing in the first flow path formed between the upper first heat sink and the upper second heat sink, or the second flow path formed between the lower first heat sink and the lower second heat sink is 5 L / m to 20 L / m.
16. The semiconductor module equipped with a heat dissipation system according to claim 4, characterized in that: The semiconductor chip is a semiconductor including one or more materials selected from GaN, SiC and Ga2O3.
17. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: The weight of the upper first heat dissipation part or the lower first heat dissipation part is smaller than the weight of the upper second heat dissipation part or the lower second heat dissipation part.
18. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: The semiconductor components are grouped into three to drive a three-phase motor.
19. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: A first concave portion is formed at the upper portion of the upper first heat dissipation component, and a first convex portion corresponding to the first concave portion is formed at the lower portion of the upper second heat dissipation component to engage with each other. A second concave portion is formed at the lower portion of the lower first heat dissipation component, and a second convex portion corresponding to the second concave portion is formed at the upper portion of the lower second heat dissipation component to engage with each other.
20. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: A first recess is formed on the upper portion of the upper first heat dissipation component, and the first recess is used to introduce a first O-ring. A second recess is formed at a lower portion of the lower first heat sink, and a second O-ring is introduced into the second recess.
21. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: A first recess is formed at an upper portion of the upper first heat dissipation component, and the first recess is filled with a first adhesive. A second recess is formed at a lower portion of the lower first heat dissipation part, and the second recess is filled with a second adhesive.
22. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: A first hook is formed along the upper edge of the upper first heat dissipation component, and a first hook hole corresponding to the first hook is formed at the lower portion of the upper second heat dissipation component. A second hook is formed along a lower edge of the lower first heat dissipation part, and a second hook hole corresponding to the second hook is formed at an upper portion of the lower second heat dissipation part.
23. The semiconductor module equipped with a heat dissipation system according to claim 22, characterized in that: The size of each of the first hook hole and the second hook hole is formed to be larger than the size of each of the first hook and the second hook, and an O-ring is embedded in each of the first hook hole and the second hook hole.
24. The semiconductor module equipped with a heat dissipation system according to claim 23, characterized in that: The fastening structure of the first hook hole and the first hook and the fastening structure of the second hook hole and the second hook are made of a cylindrical fastening structure, a hexahedral fastening structure, or a meshing structure of a specific shape.
25. The semiconductor module equipped with a heat dissipation system according to claim 1, characterized in that: The upper first heat dissipation component and the lower first heat dissipation component are formed to face each other and cover the semiconductor component. The upper second heat dissipation part is formed in a structure surrounding the upper first heat dissipation part, and the lower second heat dissipation part is formed in a structure surrounding the lower first heat dissipation part.
26. The semiconductor module equipped with a heat dissipation system according to claim 25, characterized in that: The upper first heat sink and the lower first heat sink are separated and arranged at openings at both ends of the terminal terminals extending to the outside of the molded case of the semiconductor component.
Citation Information
Patent Citations
semiconductor cooling array
KR1020190133156A