Taper hole machining method and device

Abstract

The invention provides a conical hole machining method and device, relates to the technical field of laser micromachining, and aims at optimizing a conical hole on the basis of a machining method of matching laser modification with chemical corrosion, so that compared with the prior art, the phenomenon that large-size edge breakage is easily generated in the machining process can be effectively relieved, and the machining efficiency is improved. And the taper hole with the taper and the smooth inner wall can be obtained, and the diversified requirements of packaging scenes are met.

Description

Technical Field

[0001] This application relates to the field of laser micro - machining technology. Specifically, it relates to a method and device for machining tapered holes. Background Art

[0002] Advanced packaging is shifting towards glass materials. The main reasons are that the glass through - slot (or hole) interconnection technology has excellent high - frequency electrical characteristics, low cost of large - size ultra - thin glass substrates, simple process flow, strong mechanical stability, etc., and can be applied to wafer - level packaging, chip stacking, etc. Therefore, glass through - slots (or holes) provide a lower - cost and lower - loss alternative to silicon technology, becoming a research hotspot in current advanced packaging and will be widely used in 3D integrated semiconductor packaging in the future.

[0003] Currently, when machining glass through - slots (or holes), a laser one - time forming machining method is often used. This machining method not only easily produces large - sized chipping, resulting in the deterioration of product performance, but also is generally applicable to machining straight holes. There is no effective machining method in the prior art for tapered through - holes with a taper and a relatively smooth inner wall. Summary of the Invention

[0004] The purpose of this application is to provide a method and device for machining tapered holes in view of the above - mentioned deficiencies in the prior art.

[0005] To achieve the above purpose, the technical solutions adopted in the embodiments of this application are as follows:

[0006] On the one hand, an embodiment of this application provides a method for machining a tapered hole. The method includes:

[0007] Reducing the tapered hole to be machined to obtain a tapered hole modification profile with a taper greater than that of the tapered hole to be machined;

[0008] Forming a tapered hole modification profile extending along the thickness direction of the substrate on the substrate through a laser;

[0009] Expanding and corroding outward with the tapered hole modification profile as the center through a corrosion solution to form the tapered hole to be machined on the substrate;

[0010] Wherein, the tapered hole to be machined is a single - tapered hole, and the tapered hole modification profile includes a circumferential modification profile that gradually expands from the small end to the large end of the tapered hole to be machined along the thickness direction.

[0011] Optionally, reducing the tapered hole to be machined to obtain a tapered hole modification profile with a taper greater than that of the tapered hole to be machined includes:

[0012] Reducing the large - end size of the tapered hole to be machined by a first preset value to obtain the large - end size of the tapered hole modification profile;

[0013] Reduce the small-end size of the tapered hole to be machined by a second preset value to obtain the small-end size of the modified profile of the tapered hole, where the first preset value is less than the second preset value;

[0014] Derive the modified profile of the tapered hole based on the large-end and small-end sizes of the modified profile of the tapered hole.

[0015] Optionally, the range of the first preset value is [a1, a2], where a1 = 5um and a2 = 50um;

[0016] And / or, the range of the second preset value is [a 10 , a 20 , where a 10 = 15um and a 20 = 70um.

[0017] Optionally, the second preset value is 1.3 to 5 times the first preset value.

[0018] Optionally, the height of the tapered hole to be machined in the substrate thickness direction is 0.1mm or more, and / or the small-end size of the tapered hole to be machined is 0.1mm or more.

[0019] Optionally, the tapered hole to be machined is a through hole or a blind hole; when the tapered hole to be machined is a blind hole, the modified profile of the tapered hole is used to form the small end or the large end of the blind hole closed end as the first modified end, and the modified profile of the tapered hole includes a plurality of modified points evenly distributed within the first modified end face.

[0020] Optionally, forming a modified profile of a tapered hole extending in the substrate thickness direction on the substrate by laser includes:

[0021] Irradiate the substrate with the light spot formed by the laser module to form modified points, and control the distance between the laser module and the substrate so that the light spot irradiates the substrate layer by layer in the substrate thickness direction to form a plurality of modified points on the substrate, and the plurality of modified points constitute the modified profile of the tapered hole.

[0022] Optionally, controlling the distance between the laser module and the substrate so that the light spot irradiates the substrate layer by layer in the substrate thickness direction includes:

[0023] Control the distance between the laser module and the substrate to gradually increase, so that the light spot irradiates the substrate layer by layer from the lower surface to the upper surface of the substrate, where the small end and the large end of the modified profile of the tapered hole are arranged in sequence from the lower surface to the upper surface of the substrate.

[0024] Optionally, when performing point-by-point modification on the same layer of the substrate by the light spot, control the focus of the laser module to coincide with the positions of each point in the same layer of the substrate.

[0025] Optionally, the laser module is a galvanometer laser module, an objective laser module or a Bessel laser module.

[0026] Optionally, when the laser module is a galvanometer laser module, the diameter of the light spot is 5 μm - 20 μm, the distance between two adjacent modified points is 0.5 μm - 20 μm, and / or the distance between two adjacent layers of modified points in the thickness direction of the substrate is 5 μm - 50 μm;

[0027] Optionally, when the laser module is an objective lens laser module, the diameter of the light spot is 1.5 μm - 11 μm, the distance between two adjacent modified points is 2 μm - 20 μm, and / or the distance between two adjacent layers of modified points in the thickness direction of the substrate is 2 μm - 20 μm;

[0028] Optionally, when the laser module is a Bessel laser module, the diameter of the light spot is 1 μm - 3 μm, the distance between two adjacent modified points is 2 μm - 10 μm, and / or the distance between two adjacent layers of modified points in the thickness direction of the substrate is 2 μm - 20 μm.

[0029] On the other hand, an embodiment of the present application provides a tapered hole machining device, including: a control module, a laser module, and a stage for carrying a substrate;

[0030] The light beam emitted by the laser module forms a light spot that irradiates the substrate;

[0031] The stage can at least move relative to the laser module in the thickness direction of the substrate;

[0032] The control module is electrically connected to the laser module and the stage respectively, and is used to execute any one of the above-mentioned tapered hole machining methods.

[0033] The beneficial effects of the present application include:

[0034] The present application provides a tapered hole machining method and device. Based on the machining method of laser modification combined with chemical etching, the tapered hole is optimized. Therefore, compared with the prior art, it can not only effectively alleviate the phenomenon of large-sized chipping easily generated during the machining process, but also obtain a tapered hole with a taper and a relatively smooth inner wall, meeting the diverse requirements of the packaging scenario. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required for the embodiments. It should be understood that the following drawings only show some embodiments of the present application, so they should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative efforts.

[0036] Figure 1 One of the state diagrams of a tapered hole machining method provided by an embodiment of the present application;

[0037] Figure 2 The second state diagram of a conical hole machining method provided by an embodiment of the present application;

[0038] Figure 3 The first process diagram of a conical hole machining method provided by an embodiment of the present application;

[0039] Figure 4 The second process diagram of a conical hole machining method provided by an embodiment of the present application;

[0040] Figure 5 The first state diagram of another conical hole machining method provided by an embodiment of the present application;

[0041] Figure 6 The second state diagram of another conical hole machining method provided by an embodiment of the present application;

[0042] Figure 7 The third state diagram of another conical hole machining method provided by an embodiment of the present application;

[0043] Figure 8 The first state diagram of yet another conical hole machining method provided by an embodiment of the present application;

[0044] Figure 9 The second state diagram of yet another conical hole machining method provided by an embodiment of the present application;

[0045] Figure 10 The first top view of a substrate provided by an embodiment of the present application;

[0046] Figure 11 The second top view of a substrate provided by an embodiment of the present application;

[0047] Figure 12 The first structural diagram of a conical hole machining device provided by an embodiment of the present application;

[0048] Figure 13 The second structural diagram of a conical hole machining device provided by an embodiment of the present application;

[0049] Figure 14 The third structural diagram of a conical hole machining device provided by an embodiment of the present application.

[0050] Icons: 100 - Substrate; 110 - Modified profile of tapered hole; 111 - Large end; 112 - Small end; 120 - Over - etched area; 130 - Substrate block; 140 - Tapered hole to be machined; 141 - Step section; 200 - Laser module; 210 - Laser; 220 - Mirror; 230 - Beam expander; 240 - Galvo scanner; 250 - Field lens; 260 - Objective lens; 270 - Rangefinder; 280 - Bessel lens; 300 - Stage. Detailed implementation mode

[0051] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the following will clearly and completely describe the technical solutions in the embodiments of this application with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are some, but not all, of the embodiments of this application. Usually, the components of the embodiments of this application described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0052] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of this application that is claimed, but merely represents selected embodiments of this application. It should be noted that, without conflict, the various features in the embodiments of this application can be combined with each other, and the combined embodiments are still within the protection scope of this application.

[0053] It should be noted that: Similar reference numerals and letters indicate similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0054] In the description of this application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this application is usually placed during use. It is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application. In addition, the terms "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0055] In the description of the present application, it should also be noted that unless otherwise clearly specified and defined, the terms "arranged", "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0056] In order to alleviate the chipping phenomenon generated during the processing, a method for processing holes or grooves is proposed. It should be understood that the grooves and holes in the present application can have the same meaning. Therefore, for the convenience of description, holes are used for description hereinafter.

[0057] During the processing, the corresponding area of the substrate can be modified by laser first. For example, during the modification process, the substrate can be irradiated with laser according to the shape of the desired hole to be processed, so that the position irradiated by the laser on the substrate is modified to form a modified area. Then, the modified substrate is brought into contact with the etching solution (for example, the substrate is completely immersed or semi-immersed in the etching solution. Of course, the present application does not limit the way the substrate contacts the etching solution). By using the characteristic that the etching rate of the modified area by the etching solution is faster and the etching rate of the unmodified area is slower, the modified area in the substrate is etched at a relatively fast rate until the substrate block originally occupying the position of the hole to be processed is separated from the substrate around the hole to be processed and finally falls off the substrate, thereby realizing the formation of the desired hole (i.e., the hole to be processed) at the falling position. By using this processing method, compared with the one-time laser ablation processing method, the chipping phenomenon can be effectively alleviated, and when the substrate with holes is applied to a product, the product performance can be improved.

[0058] When using the above-mentioned laser modification in combination with chemical etching to process holes, the type of hole is generally a straight hole, that is, a straight hole without taper or approximately without taper. However, in the process of the gradual development of advanced packaging technology, in order to meet the diversification of packaging scenarios, there is also a need to process tapered holes on the substrate. The above-mentioned processing method of laser modification in combination with chemical etching has some problems when processing tapered holes. The main reasons are as follows: On the one hand, the tapered hole and the straight hole belong to different types of hole structures. That is, the former requires an obvious and specific taper requirement, while the latter requires as little taper as possible and remains vertical. Therefore, the requirements for taper of the two are opposite. On the other hand, during the process of processing straight holes by the above-mentioned processing method, an etching solution is used to etch the modified area. However, it should be understood that during the actual etching process, when the substrate block originally occupying the position of the hole to be processed on the substrate and the substrate around the hole to be processed are etched through by the etching solution, the substrate block will not immediately fall off the substrate, but will be delayed for a certain time before falling off the substrate due to the adhesion effect between the substrate block and the substrate. However, during this time period, the chemical etching continues. So when the straight hole becomes a tapered hole, as Figure 1 shown, since the tapered hole has a large end 111 and a small end 112 (that is, the tapered hole gradually shrinks from the large end 111 to the small end 112), when the substrate block 130 originally occupying the position of the tapered hole on the substrate 100 and the substrate around the tapered hole are etched through by the etching solution, for the aforementioned reasons, the chemical etching will still continue for a period of time. During this time period, due to the difference in the flow rate of the etching solution at the large end 111 and the small end 112 of the tapered hole (the flow rate at the small end 112 is faster than that at the large end 111), therefore, the etching at the small end 112 of the tapered hole will be aggravated, resulting in over-etching at the small end 112 of the tapered hole (such as the over-etched area 120 in Figure 1 ), as Figure 2 shown, after the substrate block 130 in the final tapered hole falls off the substrate 100, a stepped cross-section 141 will be generated at the small end 112 of the tapered hole, resulting in discontinuous taper and non-smooth inner wall of the tapered hole, making it difficult to actually apply the obtained substrate 100.

[0059] On this basis, the embodiment of the present application provides a method and device for processing tapered holes. Based on the above-mentioned processing method of laser modification in combination with chemical etching, the tapered hole is optimized, so that compared with the prior art, it can not only effectively alleviate the phenomenon of large-size chipping easily generated during the processing process, but also obtain a tapered hole with a taper and a relatively smooth inner wall. For the convenience of understanding, the embodiments of the present application will be described below with reference to the accompanying drawings.

[0060] Please refer to Figure 3 , which shows a method for processing tapered holes. The method includes:

[0061] S100: Reduce the to-be-machined tapered hole 140 to obtain a tapered hole modification profile 110 with a taper greater than that of the to-be-machined tapered hole 140.

[0062] To facilitate obtaining the required tapered hole (i.e., the to-be-machined tapered hole 140), before machining on the substrate 100, the parameter information of the to-be-machined tapered hole 140, such as shape and size, can be determined in advance according to requirements. Then, based on the profile of the to-be-machined tapered hole 140, the tapered hole modification profile 110 (from which the modified area can be formed) that needs to be modified on the substrate 100 using a laser can be obtained. As shown in the attached drawings, both the to-be-machined tapered hole 140 and the tapered hole modification profile 110 are three-dimensional structures extending in the x-axis, y-axis, and z-axis directions. Among them, for the convenience of understanding, the thickness direction of the substrate 100 is the z-axis direction. The to-be-machined tapered hole 140 in this application is a single tapered hole, for example Figure 7 as shown. The modification profile includes a circumferential modification profile that gradually expands from the small end to the large end of the tapered hole along the thickness direction.

[0063] During the process of obtaining the tapered hole modification profile 110, considering that during the subsequent corrosion of the modified area with the etching solution, in addition to the modified area, it is inevitable that the unmodified area will also be corroded and expanded to a certain extent. Therefore, as Figure 5 shown, the to-be-machined tapered hole 140 can be reduced to a certain extent to obtain the tapered hole modification profile 110, thereby compensating for the expansion amount generated during the corrosion process by reducing the size on the basis of the to-be-machined tapered hole 140, facilitating the final obtained tapered hole to be basically the same as the to-be-machined tapered hole 140.

[0064] During the process of reducing the to-be-machined tapered hole 140 to obtain the tapered hole modification profile 110, the influencing factors of the aforementioned stepped cross-section 141 can be fully considered, and the modified area can be optimized. As Figure 5 shown, that is, making the taper of the tapered hole modification profile 110 greater than the taper of the to-be-machined tapered hole 140, thereby compensating for the excessive corrosion caused by the flow rate difference of the tapered hole from the large end 111 to the small end 112 through the difference in taper between the tapered hole modification profile 110 and the to-be-machined tapered hole 140, facilitating the subsequent acquisition of a tapered hole with a taper and a relatively smooth inner wall through laser modification combined with chemical corrosion.

[0065] It can be understood that when determining the difference in taper between the tapered hole modification profile 110 and the to-be-machined tapered hole 140, various factors such as the material of the etching solution, the material of the substrate 100, the difference in corrosion rates of the etching solution for the modified area and the unmodified area, and the difference in flow rates of the large end 111 and the small end 112 of the to-be-machined tapered hole 140 can be comprehensively considered to comprehensively determine the taper of the tapered hole modification profile 110.

[0066] S200: Form a tapered hole modification profile 110 extending along the thickness direction of the substrate 100 on the substrate 100 by laser.

[0067] As Figure 6 shown, according to the tapered hole modification profile 110 obtained in S100, control the relative movement of the laser spot irradiated on the substrate 100 and the substrate 100, so as to form a tapered hole modification profile 110 extending along the thickness direction of the substrate 100 on the substrate 100. It should be understood that the present application does not limit that the central axis of the tapered hole modification profile 110 is parallel or coincident with the thickness direction of the substrate 100, and the two can have a certain included angle, that is, the proposed tapered hole 140 corresponding to the tapered hole modification profile 110 can be inclined at a certain angle relative to the thickness direction of the substrate 100.

[0068] S300: Expand and etch outward with the tapered hole modification profile 110 as the center by the etchant to form a proposed tapered hole 140 on the substrate 100.

[0069] After forming the tapered hole modification profile 110 on the substrate 100 according to S200, the substrate 100 can be brought into contact with the etchant, and then the etchant can expand and etch outward with the tapered hole modification profile 110 as the center. By reducing the compensation amount reserved in advance for the outward expansion and etching as described above, and combining Figure 6 and Figure 7 shown, when the substrate block 130 on the substrate 100 and the substrate around the proposed tapered hole 140 are etched through by the etchant, utilize the difference in taper between the tapered hole modification profile 110 and the proposed tapered hole 140 to compensate for the over-etching caused by the flow rate difference from the large end 111 to the small end 112 of the tapered hole. After the substrate block 130 in the final proposed tapered hole 140 falls off the substrate 100, a tapered hole with a taper and a relatively smooth inner wall is obtained.

[0070] Optionally, the substrate 100 can be glass or a material similar to glass.

[0071] Optionally, the etchant can be an acidic or alkaline etchant, and can be reasonably selected according to the material of the substrate 100.

[0072] Optionally, when obtaining the tapered hole modification profile 110 with a taper greater than that of the proposed tapered hole 140 after reducing the proposed tapered hole 140 through S100, it can be reduced based on the dimensions of the large end 111 and the small end 112 of the proposed tapered hole 140. For example Figure 4 shown, the method includes:

[0073] S110: Reduce the size of the large end 111 of the to-be-machined tapered hole 140 by a first preset value to obtain the size of the large end 111 of the tapered hole modified profile 110.

[0074] S120: Reduce the size of the small end 112 of the to-be-machined tapered hole 140 by a second preset value to obtain the size of the small end 112 of the tapered hole modified profile 110, where the first preset value is less than the second preset value.

[0075] S130: Derive the tapered hole modified profile 110 based on the sizes of the large end 111 and the small end 112 of the tapered hole modified profile 110.

[0076] According to the pre-determined parameter information of the to-be-machined tapered hole 140, the size of the large end 111 and the size of the small end 112 of the to-be-machined tapered hole 140 can be obtained. Then, reduce the size of the large end 111 of the to-be-machined tapered hole 140 by a first preset value to obtain the size of the large end 111 of the tapered hole modified profile 110, and reduce the size of the small end 112 of the to-be-machined tapered hole 140 by a second preset value to obtain the size of the small end 112 of the tapered hole modified profile 110. And the first preset value needs to be less than the second preset value. In this way, when deriving the tapered hole modified profile 110 based on the sizes of the large end 111 and the small end 112 of the tapered hole modified profile 110, the taper of the tapered hole modified profile 110 can be made greater than the taper of the to-be-machined tapered hole 140.

[0077] It can be understood that the to-be-machined tapered hole processed in this application has certain dimensions. Therefore, during the modification process, it is not to modify all positions of the entire substrate block that originally occupies the tapered hole, but to modify the contour of the periphery of the substrate block, and cooperate with the chemical etching solution to etch into the modified area, so that the substrate block is separated from and falls off the substrate 100. Specifically, the height of the to-be-machined tapered hole is 0.1 - 5 mm, and the size of the small end of the to-be-machined tapered hole is 0.1 mm or more. Those skilled in the art can understand that when the cross-section of the hole is a circular hole, this size is the diameter; when the cross-section of the hole is an ellipse, this size is the length of the minor axis; when the cross-section of the hole is a polygon, this size is the width of the polygon.

[0078] In some embodiments, the range of the first preset value is [a1, a2], a1 = 5 μm, a2 = 50 μm. The size of the large end 111 of the tapered hole modified profile 110 obtained according to the first preset value within this range can reserve a more appropriate compensation amount, which can not only avoid too much compensation amount reserved at the large end 111, making the tapered hole finally formed on the substrate 100 smaller than the to-be-machined tapered hole 140, but also avoid too little compensation amount reserved at the large end 111, making the tapered hole finally formed on the substrate 100 larger than the to-be-machined tapered hole 140. More importantly, it can avoid forming a stepped cross-section 141 on the inner wall of the tapered hole.

[0079] In some embodiments, the range of the second preset value is [a 10 , a 20 , where a 10 = 15 μm and a 20 = 70 μm. The size of the small end 112 of the tapered hole modification profile 110 obtained according to the second preset value within this range can reserve a relatively appropriate compensation amount, especially compensating for the corrosion difference caused by the flow rate difference between the large end 111 and the small end 112. It can avoid excessive compensation reserved at the small end 112, resulting in a tapered hole formed on the substrate 100 being smaller than the tapered hole 140 to be machined, and can also avoid too little compensation reserved at the small end 112, resulting in a tapered hole formed on the substrate 100 being larger than the tapered hole 140 to be machined. More importantly, it can avoid forming a stepped cross-section 141 on the inner wall of the tapered hole.

[0080] In some embodiments, the range of the first preset value is [a1, a2], where a1 = 5 μm and a2 = 50 μm, and the range of the second preset value is [a 10 , a 20 , where a 10 = 15 μm and a 20 = 70 μm. When the first preset value and the second preset value are respectively within their corresponding ranges and the first preset value is kept less than the second preset value, appropriate compensation amounts can be reserved for both the size of the large end 111 and the size of the small end 112 of the tapered hole modification profile 110, so that the tapered hole finally formed on the substrate 100 is relatively consistent with the tapered hole 140 to be machined. More importantly, it can avoid forming a stepped cross-section 141 on the inner wall of the tapered hole.

[0081] It can be understood that the above first preset value and second preset value are both for the aperture of the tapered hole to be machined. For example, when the tapered hole to be machined is a conical hole, the aperture of the hole opening at the large end of the conical hole is reduced by the first preset value as a whole, and the aperture of the hole opening at the small end of the conical hole is reduced by the second preset value as a whole.

[0082] Preferably, the second preset value is 1.3 - 5 times the first preset value, and can be selected according to the difference in corrosion efficiency when the substrate materials are different. When the first preset value and the second preset value satisfy this proportional relationship, appropriate compensation amounts can be reserved for both the size of the large end 111 and the size of the small end 112 of the tapered hole modification profile 110, so that the tapered hole finally formed on the substrate 100 is relatively consistent with the tapered hole 140 to be machined. More importantly, it can avoid forming a stepped cross-section 141 on the inner wall of the tapered hole.

[0083] Optionally, when forming the tapered hole modification profile 110 extending along the thickness direction of the substrate 100 on the substrate 100 by laser through S200, the substrate 100 can be modified layer by layer, that is, the modified areas after each layer of modification continue along the thickness direction of the substrate 100 to form the tapered hole modification profile 110. It should be understood that during the layer-by-layer modification process, please refer to Figure 1 As shown, since the light spot has a certain depth of focus, when the light spot irradiates the over-etched area, it will cause different degrees of modification within a certain depth below the irradiation position. Therefore, combined with the situation of over-etching at the small end 112 caused by the flow velocity difference between the large end 111 and the small end 112, the situation will be more aggravated. Therefore, in the layer-by-layer modification scheme, by using the difference in taper between the tapered hole modification profile 110 and the tapered hole 140 to be machined, this can also be effectively compensated to avoid the generation of the stepped section 141 at the small end 112.

[0084] For example Figure 10 or Figure 11 As shown, the light spot formed by the laser module 200 can be used to irradiate the substrate 100. Correspondingly, the position on the substrate 100 irradiated by the light spot will be modified to form modified points. Therefore, by controlling the relative movement of the light spot and the substrate 100 in the x-axis and y-axis directions to form multiple modified points on the same layer, the connection lines of the multiple modified points can be used to outline the contour line of the tapered hole modification profile 110 on this layer within the same layer, thereby realizing the same-layer modification. By controlling the relative movement of the light spot and the substrate 100 in the z-axis direction, non-same-layer modification can be realized. In other words, by comprehensively controlling the relative movement of the light spot and the substrate 100 in the x-axis, y-axis, and z-axis directions, layer-by-layer modification can be realized.

[0085] Different forms of layer-by-layer modification can be achieved through different control methods. Specifically:

[0086] In some embodiments, for example Figure 10 As shown, the contour line of each layer of modification is determined to be a ring distributed in the x-axis and y-axis planes. In this way, multiple layers of ring contour lines are distributed layer by layer along the z-axis direction, and the enclosed areas corresponding to the multiple layers of ring contour lines gradually increase or gradually decrease, so that the multiple layers of ring contour lines form the tapered hole modification profile 110 along the z-axis direction.

[0087] In some embodiments, for example Figure 11As shown, the modification contour line of the layer where the large end 111 and the small end 112 are located is determined as an annulus distributed in the x-axis and y-axis planes. Each modification point between the large end 111 and the small end 112 is determined as a modification point distributed in the x-axis and y-axis planes. In this way, the modification points of multiple layers are distributed layer by layer along the z-axis direction, and the connection lines of each modification point between the large end 111 and the small end 112 in the z-axis direction form a spiral line that gradually increases from the small end 112 to the large end 111. In this way, the spiral line cooperates with the annular contour lines of the large end 111 and the small end 112 to form the tapered hole modification contour 110.

[0088] During the modification process, the modification of the same layer can be completed first, and then the modification of the next layer can be carried out by moving a certain distance along the z-axis. When the spot formed by the laser module 200 is used for layer-by-layer modification, it can start from any layer, and after the modification of the previous layer is completed, the modification of any other layer can be carried out. This application does not make specific restrictions on it.

[0089] For example, in some embodiments, the substrate 100 is located below the laser module 200. The distance between the laser module 200 and the substrate 100 can be controlled to gradually decrease, so that the spot irradiates the substrate 100 layer by layer from the upper surface to the lower surface of the substrate 100, so as to facilitate layer-by-layer modification and form the tapered hole modification contour 110. However, in this solution, when the tapered side wall of the tapered hole modification contour 110 is relatively steep and the depth of the modification point in the next layer is greater than the depth of the modification point in the previous layer, since the modification point has a certain influence on the propagation of light, therefore, if the positive projection of some modification points in the upper layer in the vertical direction (for example, the z-axis direction) overlaps with some modification points to be modified in the lower layer, it will affect the modification effect of the modification points to be modified in the lower layer, and then it is difficult for the corrosion rate at the affected modification points to meet the expectations, affecting the formation of the tapered hole 140 to be processed. Therefore, in some embodiments, the substrate 100 is located below the laser module 200, and the small end of the tapered hole 140 to be processed is at the bottom and the large end is at the top. At this time, the distance between the laser module 200 and the substrate 100 can be controlled to gradually increase, so that the spot irradiates the substrate 100 layer by layer from the lower surface to the upper surface of the substrate 100. Thus, when the tapered side wall of the tapered hole modification contour 110 is relatively steep, it is still possible to avoid the influence of some modified modification points on some unmodified modification points.

[0090] Optionally, the cross-section of the aforementioned tapered hole 140 to be processed can be any shape such as a polygon, a circle, an ellipse, etc. This application does not make specific restrictions on it. For example Figure 10 As shown, the cross-section of the tapered hole 140 to be processed is a quadrilateral. Another example Figure 11 As shown, the cross-section of the tapered hole 140 to be processed is a circle.

[0091] Optionally, the aforementioned tapered hole 140 to be processed may be a through hole or a blind hole, so as to meet the diverse requirements of advanced packaging. This application does not make specific restrictions on it, and it can be reasonably selected according to the actual needs of packaging. For the convenience of understanding, it is defined that the height of the tapered hole 140 to be processed, the tapered hole modification profile 110, and the height of the tapered hole are all their heights in the thickness direction of the substrate 100, that is, Figures 1 to 2 , Figures 5 to 14 the height in the z-axis direction shown in the following will be described separately:

[0092] Please refer to Figure 6 and Figure 7 , the tapered hole 140 to be processed is a through hole, that is, after being finally processed by the aforementioned method, the tapered hole obtained on the substrate 100 is a through hole that penetrates the substrate 100 up and down.

[0093] When the tapered hole 140 to be processed is a through hole, considering that during the etching process, the etching will expand outward with the tapered hole modification profile 110 as the center, therefore, the height of the tapered hole modification profile 110 can be made smaller than the height of the tapered hole 140 to be processed, and the etching solution is used to expand downward and / or upward to obtain a tapered through hole that is penetrated at both ends. Therefore, when the height of the tapered hole modification profile 110 is smaller than the height of the tapered hole 140 to be processed, the height difference between the two can be made smaller than the expansion height of the etching solution in the z-axis direction.

[0094] Of course, in order to improve the consistency between the tapered hole finally processed on the substrate 100 and the tapered hole 140 to be processed, the height of the tapered hole modification profile 110 can be made equal to the height of the tapered hole 140 to be processed, so as to better control the etching situation of the small end 112 of the tapered hole during the etching process.

[0095] Please refer to Figure 8 and Figure 9 , the tapered hole 140 to be processed is a blind hole, that is, one end of the tapered hole finally obtained on the substrate 100 by processing is closed by the substrate 100, and the other end is an open end, that is, it communicates with the outside on one side surface of the substrate 100. Of course, this application does not limit whether the open end of the blind hole is the large end 111 or the small end 112. For example, Figure 9 shows an example where the open end of the blind hole is the large end 111.

[0096] When the to-be-machined tapered hole 140 is a blind hole, considering that during the etching process, the etching will expand outward with the tapered hole modification profile 110 as the center, therefore, the height of the tapered hole modification profile 110 can be made smaller than the height of the to-be-machined tapered hole 140, and the etching solution is used to expand downward or upward to obtain a tapered blind hole with one end closed and one end open. Therefore, when the height of the tapered hole modification profile 110 is smaller than the height of the to-be-machined tapered hole 140, the height difference between the two should be made to match the expansion height of the etching solution in the z-axis direction. Of course, in other embodiments, when the to-be-machined tapered hole 140 is a blind hole, the height of the tapered hole modification profile 110 can also be made equal to the height of the to-be-machined tapered hole 140.

[0097] When realizing the tapered hole modification profile 110 through the aforementioned layer-by-layer modification, it can be set separately according to whether the to-be-machined tapered hole 140 is a blind hole or a through hole. That is, the main difference between the two is that when modifying a through hole, the modification of the large end 111 and the small end 112 can be carried out point by point along the periphery of the substrate block 130, while when modifying a blind hole, the closed end needs to be modified on the entire surface. The small end or the large end in the tapered hole modification profile 110 for forming the closed end of the blind hole can be used as the first modification end. When modifying the first modification end, a front modification needs to be carried out, that is, the tapered hole modification profile 110 includes a plurality of modification points evenly distributed within the first modification end face. For example, when Figure 10 using the shown small end 112 as the first modification end for surface modification, it is also necessary to make the modification points evenly distributed within the circular contour line of the small end 112.

[0098] The area formed by the modification points in a plane (such as the plane formed by the x-axis and the y-axis) is highly related to the size and height of the light spot, and the size of the light spot is highly related to the scheme adopted by the laser module 200. For example, in some subsequent embodiments, the laser module 200 can be a galvanometer 240 scheme (i.e., the laser module is a galvanometer laser module), an objective lens 260 scheme (i.e., the laser module is an objective lens laser module), a Bessel scheme (i.e., the laser module is a Bessel laser module), etc. In addition, when considering the depth of focus, the depth of focus corresponding to different laser modules 200 is also different. For example, when the laser module 200 is a galvanometer 240 scheme, an objective lens 260 scheme, and a Bessel scheme respectively, the depth of focus of each scheme (that is, the depth of the light spot on the z-axis) is different. For the convenience of understanding, the following will be described separately in combination with the tapered hole machining device:

[0099] In the galvanometer 240 scheme:

[0100] As Figure 12 shown, the tapered hole machining device includes a control module, a laser module 200, and a stage 300.

[0101] The stage 300 can be located on the light-emitting side of the entire laser module 200. For example, the entire laser module 200 and the stage 300 can be arranged along the z-axis direction. The stage 300 can be used to carry the substrate 100 to facilitate the fixation of the substrate 100 through the stage 300. The fixation method can be any one or several of snap connection, bonding, vacuum adsorption, etc. The stage 300 can be driven by a driver such as a motor to move in the x, y, and z-axis directions (in other solutions, it can also be that the entire laser module 200 is driven by a driver such as a motor to move in the x, y, and z-axis directions, as long as the light spot can have a relative movement in the required direction with respect to the substrate 100).

[0102] The laser module 200 includes a laser 210 and a galvanometer 240. The beam emitted by the laser 210 forms a light spot that irradiates the substrate 100 after being reflected by the galvanometer 240. Among them, the galvanometer 240 can be a two-dimensional galvanometer 240, which facilitates the modification of each point in the xy plane by controlling the swing of the galvanometer 240.

[0103] The control module is used to execute the aforementioned conical hole processing method and is electrically connected to the laser module 200 and the stage 300 respectively to facilitate the accurate relative movement of the two.

[0104] Combined Figure 10 As shown, when the laser acts on the lower surface of the substrate 100, the z-axis is z1 at this time; when the laser acts on the upper surface of the substrate 100, the z-axis is z2 at this time. The distance that the z-axis should move during processing is determined according to z2 - z1 (considering that the refractive index of the substrate 100 is usually greater than 1, so this distance is generally less than the thickness of the substrate 100). According to the number of modification points in the same layer and the moving speed set, the time t for the laser to finish a single rectangle can be determined, and thus the upward moving speed v of the z-axis can be determined (v = (z2 - z1) / t). According to the value of z2 - z1, the number of layers in the layer-by-layer modification can be determined, that is, how many layers (how many rectangles) to hit.

[0105] Further, to improve the light spot effect, as Figure 12 shown, the laser module 200 further includes a beam expander 230 and a field lens 250. That is, the beam emitted by the laser 210 is first expanded by the beam expander 230, then reflected by the galvanometer 240 and incident on the field lens 250, and a light spot that irradiates the substrate 100 is formed after being focused by the field lens 250.

[0106] Further, to reduce the size of the laser module 200, as Figure 12 shown, the laser module 200 further includes at least one mirror 220. For example Figure 12 shows three mirrors 220. The optical path can be folded through the mirrors 220, thereby reducing the volume of the laser module 200.

[0107] When it is necessary to perform splicing for processing beyond the processing range of the galvanometer 240 (for example, the modified profile 110 of the tapered hole exceeds the scanning range of the galvanometer 240, or for example, when it is necessary to process tapered holes at multiple positions on the substrate 100, resulting in exceeding the scanning range of the galvanometer 240), the splicing of the processing range can be achieved by moving the stage 300 or the laser module 200 along the xy plane, or multiple laser modules 200 can be arranged in the xy plane to respectively cover different processing ranges.

[0108] In the galvanometer 240 solution, based on the characteristics of the galvanometer 240, the laser modification can meet at least one of the following conditions: the diameter of the light spot is 5μm - 20μm, the distance between two adjacent modified points is 0.5μm - 20μm, and the distance between two adjacent layers of modified points along the thickness direction of the substrate 100 is 5μm - 50μm. In this way, when the laser module 200 adopts the galvanometer 240 solution, the effect of laser modification can be effectively improved.

[0109] After laser processing in the conventional galvanometer 240 solution, the target shape is formed. However, due to the large size of the focused light spot, usually greater than 10μm, even when using an fs laser to match a short - focal - length field lens 250, it is still very easy to form a chipping edge of more than 1μm. For precision packaging, any chipping edge will cause deterioration of the packaging performance, which is not allowed. This solution adopts the scheme of galvanometer 240 processing modification plus chemical etching, combining the advantages of the large light spot and fast processing speed with a long focal length in the galvanometer 240 solution and the advantage of obtaining a good edge effect through wet etching, significantly improving the edge effect of glass material processing.

[0110] In the objective lens 260 solution:

[0111] As Figure 13 shown, the tapered - hole processing device includes a control module, a laser module 200, and a stage 300.

[0112] The stage 300 can be located on the light - emitting side of the entire laser module 200. For example, the entire laser module 200 and the stage 300 can be arranged along the z - axis direction. The stage 300 can be used to carry the substrate 100 to facilitate the fixation of the substrate 100 through the stage 300. The fixation method can be any one or several of snap - connection, bonding, vacuum adsorption, etc. The stage 300 can be driven by a driver such as a motor to move in the x, y, and z directions (in other solutions, it can also be that the entire laser module 200 is driven by a driver such as a motor to move in the x, y, and z directions, as long as the light spot can have a relative movement in the required direction with respect to the substrate 100).

[0113] The laser module 200 includes a laser 210 and an objective lens 260. The beam emitted by the laser 210 forms a light spot that irradiates the substrate 100 after passing through the objective lens 260.

[0114] The control module is used to execute the aforementioned conical hole processing method and is electrically connected to the laser module 200 and the stage 300 respectively, so as to facilitate controlling the accurate relative movement of the two.

[0115] Combined Figure 10 As shown, when the laser acts on the lower surface of the substrate 100, the z-axis is z1 at this time; when the laser acts on the upper surface of the substrate 100, the z-axis is z2 at this time. According to the set laser moving speed, the time t for the laser to finish a single rectangle can be determined, and thus the upward movement speed v of the z-axis can be determined (v = (z2 - z1) / t). According to (z2 - z1) / zx, the number of layers in the layer-by-layer modification can be determined, that is, how many layers (how many rectangles) to process. zx is the distance between adjacent layers. Considering that the glass substrate 100 has a certain refractive index and is actually larger than the focal depth, so the focal depth +1, +2, +3, etc. can be taken. During processing, the objective lens 260 focuses the light beam so that the light spot irradiates on the lower surface of the substrate 100, and then starts layer-by-layer processing. For each layer processed, the z-axis moves up a certain distance, and then starts to process the next layer until the processing is completed.

[0116] Considering that it is difficult for the stage 300 to keep the substrate 100 at a high flatness during the modification process, therefore, as Figure 13 shown, during processing, in order to improve the consistency of the light spot, the laser module 200 may further include a rangefinder 270 electrically connected to the control module. Before processing, the control module controls the stage 300 to drive the substrate 100 to move in the x and y axes, so as to facilitate the rangefinder 270 to scan the flatness of the entire surface of the substrate 100 during this process. Specifically: the distance between any position on the surface of the substrate 100 and the laser module 200 can be obtained through the rangefinder 270, which is convenient for the control module to determine the flatness of the entire surface of the substrate 100 according to the distances at all positions. In this way, when the light spot modifies a certain position, if the distance between this position and the laser module 200 is not equal to the reference value, the control module can control the stage 300 to move in the z-axis direction, so as to adjust this position to a state where it is at the reference value with the laser module 200, ensuring that when processing the same layer, the light spot is on the same focal plane, that is, when the light spot performs point-by-point modification on the same layer of the substrate 100, the distance between the laser module 200 and the substrate 100 is controlled so that the size of the light spot is the same at each point.

[0117] Furthermore, in order to improve the light spot effect, as Figure 13 shown, the laser module 200 further includes a beam expander 230, that is, the beam emitted by the laser 210 is first expanded by the beam expander 230, and then enters the objective lens 260, and is focused by the objective lens 260 to form a light spot irradiating on the substrate 100.

[0118] Furthermore, in order to reduce the size of the laser module 200, asFigure 13 As shown, the laser module 200 further includes at least one mirror 220. For example Figure 13 two mirrors 220 are shown in [the figure]. The optical path can be folded by the mirrors 220, thereby reducing the volume of the laser module 200.

[0119] In the objective lens 260 solution, based on the characteristics of the objective lens 260, the laser modification can meet at least one of the following conditions: the diameter of the light spot is 1.5 μm - 11 μm; the distance between two adjacent modified points is 2 μm - 20 μm; the distance between two adjacent layers of modified points along the thickness direction of the substrate 100 is 2 μm - 20 μm. In this way, when the objective lens 260 solution is adopted in the laser module 200, the effect of laser modification can be effectively improved.

[0120] Compared with the processing of the 3D galvanometer 240 and the 2D galvanometer 240, the objective lens 260 solution can obtain a good edge effect with almost no chipping. And because the stage 300 can move in the x / y axis directions, the processing area is large.

[0121] Compared with the Bessel solution, since the Bessel light has a long focal depth, there is a phenomenon of different corrosion rates in the areas with more light spots and fewer light spots on the cross-section, so the inner wall is not very smooth (better than the galvanometer 240 solution). While the objective lens 260 focuses, due to the short focal depth and the same corrosion rate, a very smooth inner wall of the hole can be easily obtained. Because the single-layer modification area is small, it is easier to control the size of the hole.

[0122] In the Bessel lens 280 solution:

[0123] As Figure 14 shown, the conical hole processing device includes a control module, a laser module 200 and a stage 300.

[0124] The stage 300 can be located on the light-emitting side of the entire laser module 200. For example, the entire laser module 200 and the stage 300 can be arranged along the z-axis direction. The stage 300 can be used to carry the substrate 100 to facilitate the fixation of the substrate 100 through the stage 300. The fixation method can be any one or several of clamping, bonding, vacuum adsorption, etc. The stage 300 can be driven by a driver such as a motor to move in the x, y, and z axis directions (in other solutions, it can also be that the entire laser module 200 is driven by a driver such as a motor to move in the x, y, and z axis directions, as long as the light spot can have a relative movement in the required direction with the substrate 100).

[0125] The laser module 200 includes a laser 210 and a Bessel lens 280. The beam emitted by the laser 210 forms a light spot that irradiates the substrate 100 after passing through the Bessel lens 280.

[0126] The control module is used to execute the aforementioned conical hole machining method and is electrically connected to the laser module 200 and the stage 300 respectively, so as to facilitate controlling the accurate relative movement of the two.

[0127] Combined Figure 10 As shown, after the laser passes through the Bessel lens 280, a focused laser beam with a long depth of focus will be formed, and the spot is small (for example, 1 - 3 μm), which is suitable for the laser modification process. When the laser acts on the lower surface of the substrate 100, the z-axis is z1 at this time; when the laser acts on the upper surface of the substrate 100, the z-axis is z2 at this time. According to the value of z2 - z1 and the value of the z-axis upward movement of each layer (one axis value for each rectangle), generally the z-axis upward movement height is 5 - 50 μm (equivalent to hitting a rectangle, the Z-axis rises and then hits another rectangle), the number of rectangles (number of layers) required is determined.

[0128] Considering that it is difficult for the stage 300 to keep the substrate 100 absolutely horizontal during the modification process, therefore, as Figure 14 shown, during machining, in order to improve the consistency of the spot, the laser module 200 may further include a rangefinder 270 electrically connected to the control module. Before machining, the control module controls the stage 300 to drive the substrate 100 to move in the x and y axes, so as to facilitate the rangefinder 270 to scan the flatness of the entire surface of the substrate 100 during this process. Specifically: the distance between any position on the surface of the substrate 100 and the laser module 200 can be obtained through the rangefinder 270, which is convenient for the control module to determine the flatness of the entire surface of the substrate 100 according to the distances of all positions. In this way, when the spot modifies a certain position, if the distance between this position and the laser module 200 is not equal to the reference value, the control module can control the stage 300 to move in the z-axis direction, so as to adjust this position to a state where it is at the reference value with the laser module 200, ensuring that when modifying each point to be modified in the same layer, each modified point is on the same horizontal plane, and this horizontal plane can coincide with the focal plane of the laser module, that is, when the spot modifies each point on the same layer of the substrate one by one, the focus of the laser module is made to coincide with the positions of each point in the same layer of the substrate.

[0129] Of course, in the galvanometer scanning scheme, the galvanometer can be a 3D galvanometer. Thus, by controlling the 3D galvanometer, the height of the focus of the laser module in the z-axis direction can be adjusted to compensate for the difference in the z-axis direction of the modified points in the same layer due to the non - flatness of the substrate.

[0130] Furthermore, in order to improve the spot effect, as Figure 14 shown, the laser module 200 further includes a beam expander 230, that is, the beam emitted by the laser 210 is first expanded by the beam expander 230, and then enters the objective lens 260, and is focused by the objective lens 260 to form a spot irradiating the substrate 100.

[0131] Further, in order to reduce the size of the laser module 200, as Figure 14 shown, the laser module 200 further includes at least one mirror 220. For example, Figure 14 two mirrors 220 are shown in Figure 14 . The optical path can be folded by the mirrors 220, thereby reducing the volume of the laser module 200.

[0132] In the Bessel lens 280 solution, based on the characteristics of the Bessel lens 280, the laser modification can meet at least one of the following conditions: the diameter of the light spot is 1 μm - 3 μm; the distance between two adjacent modified points is 2 μm - 10 μm; the distance between two adjacent layers of modified points along the thickness direction of the substrate 100 is 2 μm - 20 μm. It can be understood that the ranges in the galvanometer solution, the objective lens solution, and the Bessel solution all include the end point values.

[0133] Compared with the 3D galvanometer 240 and 2D galvanometer 240 solutions, in the Bessel solution, due to laser modification + acid / alkali corrosion, through holes with almost no burrs can be obtained. And because the Bessel depth of field is very long, the modified area is large, and it is extremely easy to be corroded into through holes with a certain taper, and the corrosion time is short. At the same time, with the x / y axis movement, the processing area is large.

[0134] The above are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for machining a tapered hole, characterized in that, The method includes: Reducing the size of the to-be-machined tapered hole to obtain a tapered hole modification profile with a taper greater than that of the to-be-machined tapered hole; Forming the tapered hole modification profile extending along the thickness direction of the substrate on the substrate by laser; Expanding and etching outward with the tapered hole modification profile as the center by an etching solution to form the to-be-machined tapered hole on the substrate; Wherein, the to-be-machined tapered hole is a single tapered hole, and the tapered hole modification profile includes a circumferential modification profile that gradually expands from the small end to the large end of the to-be-machined tapered hole along the thickness direction.

2. The conical hole machining method according to claim 1, characterized in that The reducing the size of the to-be-machined tapered hole to obtain a tapered hole modification profile with a taper greater than that of the to-be-machined tapered hole includes: Reducing the large-end size of the to-be-machined tapered hole by a first preset value to obtain the large-end size of the tapered hole modification profile; Reducing the small-end size of the to-be-machined tapered hole by a second preset value to obtain the small-end size of the tapered hole modification profile, and the first preset value is less than the second preset value; Deriving the tapered hole modification profile based on the large-end and small-end sizes of the tapered hole modification profile.

3. The conical hole machining method according to claim 2, characterized in that, The range of the first preset value is [a1, a2], a1 = 5μm, a2 = 50μm; and / or, the range of the second preset value is [a 10 , a 20 , a 10 = 15μm, a 20 = 70μm.

4. The conical hole machining method according to claim 2, characterized in that The second preset value is 1.3 to 5 times the first preset value.

5. The conical hole machining method according to claim 1, characterized in that The to-be-machined tapered hole is a through hole or a blind hole; When the to-be-machined tapered hole is a blind hole, the tapered hole modification profile is used to form the small end or the large end of the blind hole closed end as the first modification end, and the tapered hole modification profile includes a plurality of modification points uniformly distributed in the first modification end face.

6. The conical hole machining method according to claim 1, characterized in that, The height of the to-be-machined tapered hole in the thickness direction of the substrate is 0.1 mm or more, and / or, the small-end size of the to-be-machined tapered hole is 0.1 mm or more.

7. The conical hole machining method according to any one of claims 1 to 6, characterized in that The forming the tapered hole modification profile extending along the thickness direction of the substrate on the substrate by laser includes: Irradiating the substrate with a light spot formed by a laser module to form modification points, and controlling the distance between the laser module and the substrate so that the light spot irradiates the substrate layer by layer along the thickness direction of the substrate to form a plurality of modification points on the substrate, and the plurality of modification points constitute the tapered hole modification profile.

8. The conical hole machining method according to claim 7, characterized in that, The controlling the distance between the laser module and the substrate so that the light spot irradiates the substrate layer by layer along the thickness direction of the substrate includes: Controlling the distance between the laser module and the substrate to gradually increase, so that the light spot irradiates the substrate layer by layer from the lower surface to the upper surface of the substrate; Wherein, the small end and the large end of the tapered hole modification profile are arranged in sequence from the lower surface to the upper surface of the substrate.

9. The conical hole machining method according to claim 7, characterized in that, When performing point-by-point modification on the same layer of the substrate by the light spot, controlling the focus of the laser module to coincide with the positions of each point in the same layer of the substrate.

10. The conical hole machining method according to claim 7, characterized in that, The laser module is a galvanometer laser module, an objective laser module or a Bessel laser module.

11. The method for machining a tapered hole according to claim 10, wherein When the laser module is a galvanometer laser module, the diameter of the light spot is 5 μm - 20 μm, the distance between two adjacent modified points is 0.5 μm - 20 μm, and / or the distance between two adjacent layers of the modified points in the thickness direction of the substrate is 5 μm - 50 μm; When the laser module is an objective lens laser module, the diameter of the light spot is 1.5 μm - 11 μm, the distance between two adjacent modified points is 2 μm - 20 μm, and / or the distance between two adjacent layers of the modified points in the thickness direction of the substrate is 2 μm - 20 μm; When the laser module is a Bessel laser module, the diameter of the light spot is 1 μm - 3 μm, the distance between two adjacent modified points is 2 μm - 10 μm, and / or the distance between two adjacent layers of the modified points in the thickness direction of the substrate is 2 μm - 20 μm.

12. A conical hole machining device, characterized in that, Comprising: a control module, a laser module, and a stage for carrying the substrate; the light beam emitted by the laser module forms a light spot that irradiates the substrate; the stage can at least move relative to the laser module in the thickness direction of the substrate; the control module is electrically connected to the laser module and the stage respectively, and is used to execute the tapered hole processing method according to any one of claims 1 - 11.

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