Amplification circuit, chip, and electronic device

Abstract

The embodiment of the invention provides an amplifying circuit, a chip and electronic equipment. The amplifying circuit is characterized in that a first input end of the amplifying circuit is coupled with a grid electrode of a first transistor; the source electrode of the first transistor is coupled with the ground, and the drain electrode of the first transistor is coupled with the source electrode of the second transistor; the drain electrode of the second transistor is coupled with the first output end of the amplifying circuit and is coupled with a voltage supply end; the drain electrode of the third transistor is coupled with the second output end of the amplifying circuit and is coupled with the voltage supply end; the source electrode of the second transistor is coupled with the source electrode of the third transistor through the switching circuit; the second input end of the amplifying circuit is coupled with the grid electrode of the fourth transistor, the source electrode of the fourth transistor is coupled with the ground, and the drain electrode of the fourth transistor is coupled with the source electrode of the third transistor; and the switching circuit is used for controlling connection or disconnection between the source electrode of the second transistor and the source electrode of the third transistor. According to the embodiment of the invention, the size and cost of an amplifier chip can be reduced.

Description

Technical Field

[0001] This application relates to the field of circuit technologies, and particularly to an amplifier circuit, a chip, and an electronic device. Background Art

[0002] To meet the requirements of single-user peak rate and system capacity improvement, the radio frequency system introduces the carrier aggregation (CA) technology to increase the transmission bandwidth. In the carrier aggregation technology, after multiple carrier signals in the same frequency band are received by the same antenna, they are transmitted to the RFIC for demodulation of each carrier signal. A specific implementation is that after the antenna receives multiple carrier signals in the same frequency band, the signals are first subjected to signal amplification and power splitting processing through a low noise amplifier (LNA) chip, divided into two paths of signals, and the two paths of signals are respectively input into a radio frequency integrated circuit (RFIC) for demodulation.

[0003] In the LNA chip, a Wilkinson power splitter is used for signal power splitting processing. The chip of the Wilkinson power splitter occupies a large area, increasing the size and cost of the LNA chip. Summary of the Invention

[0004] Embodiments of this application provide an amplifier circuit, a chip, and an electronic device, which can reduce the size and cost of the amplifier chip.

[0005] In a first aspect, an embodiment of this application provides an amplifier circuit, including: a first transistor, a second transistor, a third transistor, a fourth transistor, and a switching circuit; wherein, a first input end of the amplifier circuit is coupled to a gate of the first transistor; a source of the first transistor is coupled to the ground, and a drain is coupled to a source of the second transistor; a drain of the second transistor is coupled to a first output end of the amplifier circuit and is also coupled to a voltage supply terminal; a drain of the third transistor is coupled to a second output end of the amplifier circuit and is also coupled to the voltage supply terminal; a source of the second transistor is coupled to a source of the third transistor through the switching circuit; a second input end of the amplifier circuit is coupled to a gate of the fourth transistor, a source of the fourth transistor is coupled to the ground, and a drain is coupled to a source of the third transistor; the switching circuit is configured to control conduction or disconnection between the source of the second transistor and the source of the third transistor. This amplifier circuit can implement radio frequency signal amplification, power splitting, and dual-frequency and dual-switching functions through the first transistor to the fourth transistor and the switching circuit, without using devices such as inductors that occupy a large chip area, thereby reducing the size and cost of the amplifier chip including this amplifier circuit.

[0006] In some embodiments, the drain of the second transistor is coupled to the first output terminal of the amplifying circuit, which may include: the drain of the second transistor is connected to the first output terminal of the amplifying circuit through a matching circuit. The drain of the second transistor being connected to the first output terminal of the amplifying circuit through a matching circuit includes: the drain of the second transistor is directly connected to one end of the matching circuit, and the other end of the matching circuit is directly connected to the first output terminal. The matching circuit is used to adjust the matching of the first output terminal of the amplifying circuit according to radio frequency performance requirements, and can be implemented by resistors, capacitors, and / or inductors.

[0007] In some embodiments, the amplifying circuit may further include: a controller; the controller is configured to: in the first mode, control the first transistor, the second transistor, the third transistor, and the switching circuit to be turned on, and control the fourth transistor to be turned off. In some embodiments, the amplifying circuit is configured to: in the first mode, the first signal received at the first input terminal is amplified by the first transistor and then power-divided into a first sub-signal and a second sub-signal. The first sub-signal is output to the first output terminal through the second transistor, and the second sub-signal is output to the second output terminal through the switching circuit and the third transistor. The first sub-signal does not pass through the switching circuit. Optionally, the first mode may be, for example, an amplification and power-division mode. Optionally, the first signal may be a radio frequency signal.

[0008] In some embodiments, the amplifying circuit may further include: a controller; the controller is configured to: in the second mode, control the first transistor, the second transistor, the third transistor, and the fourth transistor to be turned on, and control the switching circuit to be turned off. In some embodiments, the amplifying circuit is configured to: in the second mode, the second signal in the first frequency band received at the first input terminal is output to the first output terminal through the first transistor and the second transistor, and the third signal in the second frequency band received at the second input terminal is output to the second output terminal through the fourth transistor and the third transistor. Optionally, the second mode may be, for example, a dual-frequency and dual-switching mode. Optionally, the second signal and / or the third signal may be radio frequency signals.

[0009] In some embodiments, the switching circuit includes: a switch; the first end of the switch is coupled to the source of the second transistor, and the second end is coupled to the source of the third transistor. In some embodiments, the switch may be implemented by a transistor, such as a field effect transistor, a bipolar transistor, or a high electron mobility transistor, etc.

[0010] Second aspect, an embodiment of the present application provides an amplification circuit, including: a first transistor, a second transistor, a third transistor, a fourth transistor, and a switching circuit; wherein, a first input terminal of the amplification circuit is coupled to a gate of the first transistor; a source of the first transistor is coupled to ground, and a drain is coupled to a source of the second transistor; a drain of the second transistor is connected to a first output terminal of the amplification circuit through a matching circuit, and is coupled to a voltage supply terminal; a drain of the third transistor is coupled to a second output terminal of the amplification circuit, and is coupled to the voltage supply terminal; a drain of the second transistor is coupled to a drain of the third transistor through the switching circuit; a second input terminal of the amplification circuit is coupled to a gate of the fourth transistor, a source of the fourth transistor is coupled to ground, and a drain is coupled to a source of the third transistor; the switching circuit is configured to control conduction or disconnection between a drain of the second transistor and a drain of the third transistor. The above-mentioned connection that the drain of the second transistor is connected to the first output terminal of the amplification circuit through the matching circuit includes: the drain of the second transistor is directly connected to one end of the matching circuit, and the other end of the matching circuit is directly connected to the first output terminal. The above-mentioned matching circuit is configured to adjust the matching of the first output terminal of the amplification circuit according to radio frequency performance requirements, and can be implemented by resistors, capacitors, and / or inductors. This amplification circuit can achieve the amplification power splitting and dual-frequency dual-switching functions of radio frequency signals through the first transistor to the fourth transistor and the switching circuit. Moreover, only a matching circuit is connected between the first output terminal and the drain of the second transistor, without additional devices such as inductors that occupy a large chip area, thereby reducing the size and cost of the amplifier chip including this amplification circuit.

[0011] In some embodiments, the amplification circuit may further include: a controller; the controller is configured to: in a first mode, control the first transistor, the second transistor, and the switching circuit to conduct, and control the third transistor and the fourth transistor to turn off. In some embodiments, the amplification circuit may be configured to: in the first mode, a first signal received at the first input terminal is amplified by the first transistor and the second transistor and then power-split into a first sub-signal and a second sub-signal. The first sub-signal is output to the first output terminal through the matching circuit, and the second sub-signal is output to the second output terminal through the switching circuit. The first sub-signal does not pass through the switching circuit. Optionally, the first mode may be, for example, an amplification power splitting mode.

[0012] In some embodiments, the amplification circuit may further include: a controller; the controller is configured to: in a second mode, control the first transistor, the second transistor, the third transistor, and the fourth transistor to conduct, and control the switching circuit to disconnect. In some embodiments, the amplification circuit may be configured to: in the second mode, a second signal in a first frequency band received at the first input terminal is output to the first output terminal through the first transistor, the second transistor, and the matching circuit, and a third signal in a second frequency band received at the second input terminal is output to the second output terminal through the fourth transistor and the third transistor. Optionally, the second mode may be, for example, a dual-frequency dual-switching mode.

[0013] In some embodiments, the switching circuit includes: a switch; a first end of the switch is coupled to the drain of a second transistor, and a second end is coupled to the drain of a third transistor. In some embodiments, the switch can be implemented by a transistor such as a field effect transistor, a bipolar transistor, or a high electron mobility transistor, etc.

[0014] In a third aspect, an amplifier chip provided by an embodiment of the present application includes the amplification circuit according to any one of the first aspect.

[0015] In a fourth aspect, an electronic device provided by an embodiment of the present application is characterized by including the amplification circuit according to any one of the first aspect, or including the amplifier chip according to the third aspect.

[0016] In some embodiments, the electronic device may further include: a first antenna; a first input end of the amplification circuit is connected to the first antenna; the amplification circuit is configured to receive a radio frequency signal of a first frequency band transmitted by the first antenna through the first input end in a first mode. At this time, the first output end and the second output end of the amplification circuit may respectively output radio frequency signals, realizing the amplification and power splitting of the radio frequency signal of the first frequency band by the amplification circuit.

[0017] In some embodiments, the electronic device may further include: a second antenna; the first input end and the second input end of the amplification circuit are respectively connected to the first antenna; the amplification circuit is configured to receive a radio frequency signal of a second frequency band transmitted by the second antenna through the first input end and receive a radio frequency signal of a third frequency band transmitted by the second antenna through the second input end in a second mode. At this time, the first output end of the amplification circuit may output the radio frequency signal of the second frequency band, and the second output end outputs the radio frequency signal of the third frequency band, realizing the dual-frequency and dual-switching of the amplification circuit.

[0018] In some embodiments, the electronic device may further include: a third antenna and a fourth antenna; the first input end of the amplification circuit is connected to the third antenna, and the second input end of the amplification circuit is connected to the fourth antenna; the amplification circuit is configured to receive a radio frequency signal of a fourth frequency band transmitted by the third antenna through the first input end and receive a radio frequency signal of a fifth frequency band transmitted by the fourth antenna through the second input end in a second mode. At this time, the first output end of the amplification circuit may output the radio frequency signal of the second frequency band, and the second output end outputs the radio frequency signal of the third frequency band, realizing the dual-frequency and dual-switching of the amplification circuit. Description of the Drawings

[0019] Figure 1 It is a schematic structural diagram of a radio frequency system in an electronic device provided by an embodiment of the present application;

[0020] Figure 2 It is a schematic implementation structural diagram of a radio frequency path provided by an embodiment of the present application;

[0021] Figure 3A schematic diagram of the structure of the LNA chip provided by the embodiment of the present application;

[0022] Figure 4A A schematic diagram of an implementation structure of the radio frequency path provided by the embodiment of the present application;

[0023] Figure 4B Another schematic diagram of an implementation structure of the radio frequency path provided by the embodiment of the present application;

[0024] Figure 4C Yet another schematic diagram of an implementation structure of the radio frequency path provided by the embodiment of the present application;

[0025] Figure 4D Yet another schematic diagram of an implementation structure of the radio frequency path provided by the embodiment of the present application;

[0026] Figure 5 A schematic diagram of the structure of the amplifier circuit provided by the embodiment of the present application;

[0027] Figure 6 Another schematic diagram of the structure of the amplifier circuit provided by the embodiment of the present application;

[0028] Figure 7A and Figure 7B is Figure 6 A schematic diagram of the working principle of the amplifier circuit shown in the embodiment of the present application;

[0029] Figure 7C A simplified schematic diagram of the working principle of the amplifier circuit in the embodiment of the present application;

[0030] Figure 8 The third schematic diagram of the structure of the amplifier circuit provided by the embodiment of the present application;

[0031] Figure 9A and Figure 9B is Figure 8 A schematic diagram of the working principle of the amplifier circuit shown in the embodiment of the present application;

[0032] Figure 10 The fourth schematic diagram of the structure of the amplifier circuit provided by the embodiment of the present application;

[0033] Figure 11 The fifth schematic diagram of the structure of the amplifier circuit provided by the embodiment of the present application;

[0034] Figure 12 The sixth schematic diagram of the structure of the amplifier circuit provided by the embodiment of the present application;

[0035] Figure 13 The seventh schematic diagram of the structure of the amplifier circuit provided by the embodiment of the present application. Detailed implementation manners

[0036] The terms used in the embodiments section of this application are only used to explain the specific embodiments of this application and are not intended to limit this application.

[0037] A radio frequency system is provided in an electronic device such as a mobile phone to support the wireless communication of the electronic device. The structure of the radio frequency system is, for example Figure 1 as shown, including: a radio frequency integrated circuit (RFIC), a low noise amplifier (LNA), a filter, and a switch, etc. In the signal receiving part, the radio frequency signal received by the antenna passes through the switch, the filter, and the LNA in sequence, and then is transmitted to the RFIC for demodulation. The circuit structure from the antenna to the RFIC can also be called a radio frequency path.

[0038] To meet the requirements of single-user peak rate and system capacity improvement, the radio frequency system introduces carrier aggregation (CA) technology to increase the transmission bandwidth. In the carrier aggregation technology, the radio frequency signal received by the antenna includes multiple carrier signals in the same frequency band. After the above radio frequency signal is received by the antenna, it is transmitted to the RFIC for demodulation of each carrier signal. A specific implementation method is that after the antenna receives the above radio frequency signal, it needs to be amplified and power-divided by a low noise amplifier (LNA) chip, divided into two radio frequency signals, and the two radio frequency signals are respectively input into the radio frequency integrated circuit (RFIC) for demodulation. The above power division process is to divide the radio frequency signal into two radio frequency signals. To reduce the mutual influence between the two radio frequency signals after power division, a certain isolation degree is required between the two output terminals of the power division circuit, and generally the isolation degree is required to be greater than 10 dB.

[0039] To have an amplification function and a power division function with isolation (hereinafter referred to as an amplification and power division function), the LNA chip structure provided between the antenna and the RFIC is as Figure 2 shown, including an amplification circuit and a power divider. When the radio frequency signal received by the antenna is transmitted to the LNA chip, it first enters the amplification circuit for power amplification. The radio frequency signal after power amplification is transmitted to the power divider, and the power divider divides the radio frequency signal into 2 radio frequency signals, and the 2 radio frequency signals are transmitted to the RFIC for demodulation. It can be understood that Figures 2 to 4C other components that the radio frequency circuit may include are omitted in the circuits such as Figure 1 the switch and the filter shown in

[0040] The specific implementation structure of the power divider in the LNA chip is, for example, Figure 3 as shown, which includes multiple switches S01 to S06, inductors L01, L02, and a resistor R. The above switches S01 to S06 are used for path selection. The inductors L01 and L02 can form a Wilkinson power divider, and the resistor R is used to achieve isolation between two RF signals to reduce crosstalk between the two RF signals. It can be seen that Figure 3 although the power division processing of the RF signal is achieved through the power divider in the LNA chip shown, however, the two inductors that make up the Wilkinson power divider occupy a large area of the LNA chip, increasing the size and cost of the LNA chip. Moreover, it will also introduce additional insertion loss to deteriorate the performance of the LNA chip.

[0041] Therefore, the embodiment of the present application provides an amplifier circuit, which can reduce the size and cost of the amplifier chip where the amplifier circuit is located under the condition of realizing RF signal amplification and power division with isolation. In addition, since the method circuit of the embodiment of the present application uses active devices to realize RF signal amplification, no additional insertion loss will be introduced, thereby improving the performance of the amplifier chip where the amplifier circuit is located.

[0042] The following will Figures 4A to 4D exemplarily illustrate the possible implementation structures of the RF path applicable to the amplifier circuit of the embodiment of the present application.

[0043] As Figure 4A shown, the amplifier circuit provided by the embodiment of the present application can replace Figure 2 the LNA chip in the RF path shown, and simultaneously realize the power amplification function and power division function for the RF signal. As Figure 4A shown, the RF signal received by the antenna is transmitted to the first input end RFin1 of the amplifier circuit of the embodiment of the present application. The amplifier circuit of the embodiment of the present application amplifies and divides the RF signal into two RF signals, which are respectively transmitted to the RFIC through the first output end RFout1 and the second output end RFout2 of the amplifier circuit for demodulation by the RFIC.

[0044] In some embodiments, in order to meet the requirement of the electronic device to listen to RF signals in other frequency bands, as Figure 4B shown, the amplifier circuit of the embodiment of the present application may further include a second input end RFin2. On the basis of the amplification and power division functions shown in Figure 4A it can also realize the dual-frequency and dual-opening function. When the amplifier circuit realizes the dual-frequency and dual-opening function, the first input end RFin1 of the amplifier circuit can receive an RF signal in one frequency band, which is amplified and output to the RFIC from the first output end RFout1, and the second input end RFin2 can receive an RF signal in another frequency band, which is amplified and output to the RFIC from the second output end RFout2.

[0045] In some embodiments, different from Figure 4B the radio frequency signals received by the first input terminal RFin1 and the second input terminal RFin2 of the amplification circuit in the illustrated embodiment are received by the same antenna, the above two radio frequency signals may also be received by two antennas respectively. For example Figure 4C as shown, the radio frequency signal received by the first input terminal RFin1 of the amplification circuit is received by antenna 1, and the radio frequency signal received by the second input terminal RFin2 is received by antenna 2. Among them, the radio frequency signals received by antenna 1 and antenna 2 may be radio frequency signals of different frequency bands. At this time, the amplification circuit can also implement the dual-frequency and dual-switching function.

[0046] In some embodiments, the electronic device may include multiple RFICs, and the two output terminals of the amplification circuit may be respectively coupled to different RFICs, so as to transmit the two radio frequency signals output from the first output terminal RFout1 and the second output terminal RFout2 to different RFICs for demodulation respectively. For example Figure 4D as shown, the first output terminal RFout1 of the amplification circuit may be coupled to RFIC1, so as to transmit the radio frequency signal to RFIC1 for demodulation, and the second output terminal RFout2 of the amplification circuit may be coupled to RFIC2, so as to transmit the radio frequency signal to RFIC2 for demodulation.

[0047] Hereinafter, an exemplary description will be further made on the circuit structure implementation of the amplification circuit according to the embodiments of the present application.

[0048] Figure 5 is a schematic structural diagram of the amplification circuit according to the embodiment of the present application. As Figure 5 shown, the circuit may include: transistors S1 to S4, and a switching circuit; wherein,

[0049] the first input terminal RFin1 of the amplification circuit is coupled to the gate of transistor S1; the source of transistor S1 is grounded to GND, and the drain is coupled to the source of transistor S2; the drain of transistor S2 is respectively coupled to the first output terminal RFout1 of the amplification circuit and the voltage supply terminal VDD;

[0050] the second input terminal RFin2 of the amplification circuit is coupled to the gate of transistor S3; the source of transistor S3 is grounded to GND, and the drain is coupled to the source of transistor S4; the drain of transistor S4 is respectively coupled to the second output terminal RFout2 of the amplification circuit and the voltage supply terminal VDD;

[0051] A switching circuit is coupled between the drain of transistor S1 and the drain of transistor S3. In other words, a switching circuit is coupled between the source of transistor S2 and the source of transistor S4;

[0052] The switching circuit is used to control the conduction or disconnection between the drain of transistor S1 and the drain of transistor S3. In other words, the switching circuit is used to control the conduction or disconnection between the source of transistor S3 and the source of transistor S4.

[0053] In order to achieve the purpose of amplifying the radio frequency signal, when transistors S1 to S4 are conducting, they can operate in the amplification state. In some embodiments, the above transistors operating in the amplification state can also be referred to as amplification transistors.

[0054] Optionally, the above transistors S1 to S4 can be implemented by field effect transistors, bipolar transistors, or high electron mobility transistors, etc.

[0055] The above switching circuit can be implemented by any circuit with a switching function. Optionally, in order to improve the circuit performance of the amplification circuit, a switching circuit with low conduction insertion loss and high off-state isolation can be selected. For example, in one embodiment, the switching circuit may include: a switch, with both ends of the switch respectively coupled to the drain of transistor S1 and the drain of transistor S3. Thus, the conduction and disconnection of the switch can achieve the conduction or disconnection between the drain of transistor S1 and the drain of transistor S3. The above switch can be implemented by transistors such as field effect transistors, bipolar transistors, or high electron mobility transistors, etc. In another embodiment, the switching circuit may further include devices such as resistors, capacitors, and / or inductors, etc. on the basis of the above switch. The above switch, capacitor, and inductor can be connected in series or in parallel, etc., as long as it has a switching function.

[0056] Optionally, the above coupling can be a direct connection, an indirect connection through devices (such as capacitors, resistors, or inductors, etc.) or circuits, or an indirect coupling connection, etc. The embodiments of the present application do not make limitations. The above indirect coupling connection means that the interaction between two devices is achieved through the transmission of electromagnetic fields or electromagnetic waves. For example, the interaction between devices such as transformers and inductive couplers in a circuit is an indirect coupling. Taking the coupling of the source of the above transistor S1 to the ground GND as an example, the source of transistor S1 can be directly grounded to GND, or grounded to GND through devices or circuits, etc.

[0057] For example, in some embodiments, in order to obtain the required radio frequency performance, as Figure 6 shown, the first input terminal RFin1 of the amplification circuit and the gate of transistor S1 can be coupled through an input matching circuit 1. The input matching circuit 1 is used to adjust the matching of the first input terminal RFin1 of the amplification circuit according to the radio frequency performance requirements.

[0058] For similar reasons, as Figure 6As shown, the second input terminal RFin2 of the amplifier circuit can be coupled to the gate of the transistor S3 through the input matching circuit 2, and the input matching circuit 2 is used to adjust the matching of the first input terminal RFin2 of the amplifier circuit according to the RF performance requirements;

[0059] As Figure 6 shown, the first output terminal RFout1 of the amplifier circuit can be coupled to the drain of the transistor S2 through the output matching circuit 1 to adjust the matching of the first output terminal RFout1 of the amplifier circuit according to the RF performance requirements;

[0060] As Figure 6 shown, the second output terminal RFout2 of the amplifier circuit can be coupled to the drain of the transistor S4 through the output matching circuit 2 to adjust the matching of the second output terminal RFout2 of the amplifier circuit according to the RF performance requirements;

[0061] As Figure 6 shown, the source of the transistor S1 can be coupled to the ground GND through the source matching circuit 1 to adjust the matching of the source of the transistor S1 according to the RF performance requirements;

[0062] As Figure 6 shown, the source of the transistor S3 can be coupled to the ground GND through the source matching circuit 2 to adjust the matching of the source of the transistor S3 according to the RF performance requirements;

[0063] As Figure 6 shown, the drain of the transistor S2 can be coupled to the voltage supply terminal VDD through the drain matching circuit 1 to adjust the matching of the drain of the transistor S2 according to the RF performance requirements;

[0064] As Figure 6 shown, the drain of the transistor S4 can be coupled to the voltage supply terminal VDD through the drain matching circuit 2 to adjust the matching of the drain of the transistor S4 according to the RF performance requirements.

[0065] For example, in some embodiments, in order to obtain the required RF performance, as Figure 6 shown, the drain of the transistor S1 can be coupled to the source of the transistor S2 through the inter-stage matching circuit 1 to adjust the matching between the drain of the transistor S1 and the source of the transistor S2 of the amplifier circuit according to the RF performance requirements, and the drain of the transistor S3 can be coupled to the source of the transistor S4 through the inter-stage matching circuit 2 to adjust the matching between the drain of the transistor S3 and the source of the transistor S4 of the amplifier circuit according to the RF performance requirements.

[0066] In some embodiments, any of the above matching circuits can be implemented by resistors, capacitors, and / or inductors. The specific circuit implementation structure can be adjusted based on the required RF performance, and the embodiments of the present application do not limit it.

[0067] In some embodiments, in order to make transistors S1 to S4 operate in the amplification state when turned on, as Figure 6 shown, the amplification circuit of the embodiments of the present application may further include: bias circuits 1 to 4 respectively coupled to the gates of transistors S1 to S4. The bias circuits 1 to 4 are respectively used to provide appropriate bias voltages for the corresponding transistors, so that the corresponding transistors operate in the amplification state when turned on, thereby amplifying the RF signal.

[0068] It can be understood that the above bias circuits (bias circuits 1 to 4) and matching circuits (for example, input matching circuits 1 to 2, output matching circuits 1 to 2, inter-stage matching circuits 1 to 2, etc.) may have different circuit implementations based on different circuit performance requirements, and the embodiments of the present application do not limit it.

[0069] It can be understood that based on the circuit performance requirements, in some embodiments, Figure 6 in the circuit shown above, the above bias circuits (bias circuits 1 to 4) and matching circuits (for example, input matching circuits 1 to 2, output matching circuits 1 to 2, inter-stage matching circuits 1 to 2, etc.) can be adaptively increased or decreased.

[0070] It can be understood that based on the circuit performance requirements, Figure 6 other circuit structures can also be added to the circuit shown. For example, in order to play a role in blocking DC, a capacitor can also be coupled between the first input terminal RFin1 of the amplification circuit and the gate of transistor S1, and / or a capacitor can also be coupled between the second input terminal RFin2 of the amplification circuit and the gate of transistor S3.

[0071] In some embodiments, the drain of transistor S2 can be connected to the first output terminal RFout1 of the amplification circuit through the output matching circuit 1. Specifically, the drain of transistor S2 can be directly connected to one end of the output matching circuit 1, and the other end of the output matching circuit 1 is directly connected to the first output terminal RFout1. At this time, only the output matching circuit 1 is connected between the drain of transistor S2 and the first output terminal RFout1 of the amplification circuit. Compared with coupling other devices such as inductors under the condition of connecting the output matching circuit 1, the matching of the first output terminal RFout1 of the amplification circuit can be better adjusted according to the RF performance requirements, improving the circuit performance.

[0072] For similar reasons, the drain of transistor S4 can be connected to the second output terminal RFout2 of the amplifying circuit through the output matching circuit 2. Specifically, the drain of transistor S4 can be directly connected to one end of the output matching circuit 2, and the other end of the output matching circuit 2 is directly connected to the second output terminal RFout2. At this time, only the output matching circuit 2 is connected between the drain of transistor S4 and the second output terminal RFout2 of the amplifying circuit. Compared with coupling other devices such as inductors under the condition of connecting the output matching circuit 2, the matching of the second output terminal RFout2 of the amplifying circuit can be better adjusted according to the RF performance requirements, improving the circuit performance.

[0073] For the following, Figure 6 taking the amplifying circuit shown as an example, the working principle of the amplifying circuit in the embodiments of the present application Figure 5 and Figure 6 will be exemplarily described.

[0074] For the convenience of description, in the embodiments of the present application, the working mode when the amplifying circuit realizes the amplification and power splitting function is called the amplification and power splitting mode, and the working mode when realizing the dual-frequency and dual-switching function is called the dual-frequency and dual-switching mode.

[0075] When the amplifying circuit in the embodiments of the present application operates in the amplification and power splitting mode, as Figure 7A shown, transistors S1, S2, and S4 can be controlled to conduct, the switching circuit conducts, and transistor S3 is turned off. At this time, the RF signal received by the first input terminal RFin1 of the amplifying circuit can be split into two RF signals after passing through the input matching circuit 1 and transistor S1. One RF signal can be output to the first output terminal RFout1 of the amplifying circuit via the inter-stage matching circuit 1, transistor S2, and output matching circuit 1, and the other RF signal can be output to the second output terminal RFout2 of the amplifying circuit via the switching circuit, inter-stage matching circuit 2, transistor S4, and output matching circuit 2. Transistors S1, S2, and S4 operate in the amplification state, and the amplifying function of the RF signal by the amplifying circuit can be realized. The RF signal received by the first input terminal RFin1 of the amplifying circuit is split into two RF signals and output from the first output terminal RFout1 and the second output terminal RFout2 of the amplifying circuit respectively, and the power splitting function of the amplifying circuit can be realized.

[0076] When the amplifier circuit according to the embodiment of the present application operates in the amplification power splitting mode, since the transistors S2 and S4 are active devices, there is reverse isolation between them in the amplification state, so that a high isolation degree can be achieved between the above two paths, so that the two radio frequency signals after power splitting meet the requirements of phase and amplitude consistency, and the crosstalk between the two radio frequency signals is reduced. In addition, the inter-stage matching circuit 1, the switch circuit, the inter-stage matching circuit 2, the output matching circuit 1 and the output matching circuit 2 in the path also have an isolation effect, which can further improve the isolation degree between the two paths.

[0077] When the amplifier circuit according to the embodiment of the present application operates in the dual-frequency dual-switching mode, as Figure 7B shown, the transistors S1 to S4 can be controlled to conduct, and the switch circuit can be controlled to disconnect. At this time, the radio frequency signal received by the first input end RFin1 of the amplifier circuit can pass through the input matching circuit 1, the transistor S1, the inter-stage matching circuit 1, the transistor S2, and the output matching circuit 1 and be output to the first output end RFout1 of the amplifier circuit, and the radio frequency signal received by the second input end RFin2 of the amplifier circuit can pass through the input matching circuit 2, the transistor S3, the inter-stage matching circuit 2, the transistor S4, and the output matching circuit 2 and be output to the second output end RFout2 of the amplifier circuit.

[0078] When the amplifier circuit operates in the dual-frequency dual-switching mode, since the transistors S1 to S4 are active devices, there is reverse isolation between the transistors on the two paths in the amplification state, so that a high isolation degree can be achieved between the above two paths. In addition, the output matching circuit 1 and the output matching circuit 2 in the path also have an isolation effect, which can further improve the isolation degree between the two paths.

[0079] Optionally, the amplifier circuit according to the embodiment of the present application can also implement the amplification and power splitting function for the radio frequency signal received by the second input end RFin2 of the amplifier circuit. At this time, the transistor S1 can be controlled to turn off, the transistors S2 to S4 can be controlled to conduct, and the switch circuit can be controlled to conduct, so as to amplify and power split the radio frequency signal received by the second input end RFin2 of the amplifier circuit into two radio frequency signals and output them from the first output end RFout1 and the second output end RFout2 of the amplifier circuit respectively. The specific working principle can refer to Figure 7A , which will not be elaborated here.

[0080] Optionally, the amplification circuit according to the embodiments of the present application may also have a single-pass function. In the single-pass mode for implementing the single-pass function, the transistor S1 and the transistor S2 can be controlled to conduct, and the transistor S3, the transistor S4, and the switching circuit are disconnected, so that the radio frequency signal received by the first input terminal RFin1 of the amplification circuit is amplified and output from the first output terminal RFout1 of the amplification circuit, thereby realizing single-input and single-output of the radio frequency signal. Similarly, the transistor S3 and the transistor S4 can be controlled to conduct, and the transistor S1, the transistor S2, and the switching circuit are disconnected, so that the radio frequency signal received by the second input terminal RFin2 of the amplification circuit is amplified and output from the second output terminal RFout2 of the amplification circuit. In the single-pass mode of the amplification circuit according to the embodiments of the present application, the radio frequency signal is amplified by active devices such as transistors, without additional insertion loss of passive devices, thereby improving the performance of the amplification circuit in the single-pass mode.

[0081] Figure 5 and Figure 6 A simplified diagram of the working principle of the amplification circuit shown in Figure 7C is as shown. In the amplification and power splitting mode, the radio frequency signal received by the first input terminal RFin1 of the amplification circuit can be amplified and split into two radio frequency signals and output from the first output terminal RFout1 and the second output terminal RFout2 of the amplification circuit respectively. Alternatively, the radio frequency signal received by the second input terminal RFin2 of the amplification circuit can be amplified and split into two radio frequency signals and output from the first output terminal RFout1 and the second output terminal RFout2 of the amplification circuit respectively. In the dual-frequency and dual-open mode, the radio frequency signal received by the first input terminal RFin1 of the amplification circuit can be amplified and output from the first output terminal RFout1 of the amplification circuit, and moreover, the radio frequency signal received by the second input terminal RFin2 of the amplification circuit can be amplified and output from the second output terminal RFout2 of the amplification circuit. In the single-pass mode, the radio frequency signal received by the first input terminal RFin1 of the amplification circuit can be amplified and output from the first output terminal RFout1 of the amplification circuit, or the radio frequency signal received by the second input terminal RFin2 of the amplification circuit can be amplified and output from the second output terminal RFout2 of the amplification circuit.

[0082] Figure 5 and Figure 6 In the amplification circuit shown in

[0083] Another amplifier circuit is also provided in the embodiments of the present application. Different from the above Figure 5 and Figure 6 the amplifier circuit shown, the main difference is that the switching circuit is coupled between the drain of transistor S2 and the drain of transistor S4.

[0084] For example Figure 8 in the amplifier circuit shown, taking the change of the coupling position of the switching circuit in the Figure 6 shown amplifier circuit to be coupled between the drain of transistor S2 and the drain of transistor S4 as an example. In the Figure 8 shown circuit, the switching circuit is used to: control the conduction or disconnection between the drain of transistor S2 and the drain of transistor S4.

[0085] In some embodiments, the drain of transistor S2 can be connected to the first output terminal RFout1 of the amplifier circuit through the output matching circuit 1. Specifically, the drain of transistor S2 can be directly connected to one end of the output matching circuit 1, and the other end of the output matching circuit 1 is directly connected to the first output terminal RFout1. At this time, only the output matching circuit 1 is connected between the drain of transistor S2 and the first output terminal RFout1 of the amplifier circuit. Compared with coupling other devices such as inductors under the condition of connecting the output matching circuit 1, the matching of the first output terminal RFout1 of the amplifier circuit can be better adjusted according to the RF performance requirements, improving the circuit performance.

[0086] For similar reasons, the drain of transistor S4 can be connected to the second output terminal RFout2 of the amplifier circuit through the output matching circuit 2. Specifically, the drain of transistor S4 can be directly connected to one end of the output matching circuit 2, and the other end of the output matching circuit 2 is directly connected to the second output terminal RFout2. At this time, only the output matching circuit 2 is connected between the drain of transistor S4 and the second output terminal RFout2 of the amplifier circuit. Compared with coupling other devices such as inductors under the condition of connecting the output matching circuit 2, the matching of the second output terminal RFout2 of the amplifier circuit can be better adjusted according to the RF performance requirements, improving the circuit performance.

[0087] For Figure 8 the working principle of the shown amplifier circuit is exemplarily described as follows.

[0088] When the amplifier circuit in the embodiments of the present application operates in the amplification and power splitting mode, as Figure 9AAs shown, the transistor S1 and the transistor S2 can be controlled to conduct, the switching circuit conducts, and the transistor S3 and the transistor S4 are turned off. At this time, the radio frequency signal received by the first input end RFin1 of the amplifying circuit can be divided into two radio frequency signals after passing through the input matching circuit 1, the transistor S1, the inter-stage matching circuit 1, and the transistor S2. One radio frequency signal can be output to the first output end RFout1 of the amplifying circuit via the output matching circuit 1, and the other radio frequency signal can be output to the second output end RFout2 of the amplifying circuit via the switching circuit and the output matching circuit 2. The transistor S1 and the transistor S2 operate in the amplifying state, and the amplifying function of the radio frequency signal by the amplifying circuit can be realized. The radio frequency signal received by the first input end RFin1 of the amplifying circuit is divided into two radio frequency signals and output from the first output end RFout1 and the second output end RFout2 of the amplifying circuit respectively, and the power splitting function of the amplifying circuit can be realized.

[0089] When the amplifying circuit operates in the amplification and power splitting mode, the inter-stage matching circuit 1, the switching circuit, the inter-stage matching circuit 2, the output matching circuit 1, and the output matching circuit 2 in the two paths have an isolation effect, which can improve the isolation degree between the two paths.

[0090] When the amplifying circuit in the embodiment of the present application operates in the dual-frequency and dual-switching mode, as Figure 9B shown, the transistor S1 to the transistor S4 can be controlled to conduct, and the switching circuit can be controlled to disconnect. At this time, the radio frequency signal received by the first input end RFin1 of the amplifying circuit can be output to the first output end RFout1 of the amplifying circuit via the input matching circuit 1, the transistor S1, the inter-stage matching circuit 1, the transistor S2, and the output matching circuit 1, and the radio frequency signal received by the second input end RFin2 of the amplifying circuit can be output to the second output end RFout2 of the amplifying circuit via the input matching circuit 2, the transistor S3, the inter-stage matching circuit 2, the transistor S4, and the output matching circuit 2.

[0091] When the amplifying circuit operates in the dual-frequency and dual-switching mode, since the transistors S1 to S4 are active devices, there is reverse isolation between the transistors on the two paths in the amplifying state, so that a high isolation degree can be achieved between the above two paths. In addition, the output matching circuit 1 and the output matching circuit 2 in the paths also have an isolation effect, which can further improve the isolation degree between the two paths.

[0092] Optionally, the amplifier circuit according to the embodiments of the present application can also implement the amplification and power splitting function of the radio frequency signal received by the second input terminal RFin2 of the amplifier circuit. At this time, the transistors S1 and S2 can be controlled to turn off, and the transistors S3 and S4 can be controlled to turn on, and the switching circuit can be turned on, so as to amplify and power split the radio frequency signal received by the second input terminal RFin2 of the amplifier circuit into two radio frequency signals and output them from the first output terminal RFout1 and the second output terminal RFout2 of the amplifier circuit respectively. The specific working principle can be referred to Figure 9A , which will not be elaborated here.

[0093] Optionally, the amplifier circuit according to the embodiments of the present application can also operate in a single-pass mode. At this time, the transistors S1 and S2 can be controlled to turn on, and the transistors S3, S4, and the switching circuit can be turned off, so as to amplify the radio frequency signal received by the first input terminal RFin1 of the amplifier circuit and output it from the first output terminal RFout1 of the amplifier circuit. Similarly, the transistors S3 and S4 can be controlled to turn on, and the transistors S1, S2, and the switching circuit can be turned off, so as to amplify the radio frequency signal received by the second input terminal RFin2 of the amplifier circuit and output it from the second output terminal RFout2 of the amplifier circuit.

[0094] Figure 8 In the amplifier circuit shown, the amplification, power splitting, and dual-frequency and dual-switching functions of the radio frequency signal are realized through the transistors S1 to S4 and the switching circuit, without using devices such as inductors that occupy a large chip area, thereby reducing the size and cost of the amplifier chip including the amplifier circuit. Moreover, the above amplifier circuit performs amplification and power splitting through active devices such as transistors, without additional insertion loss of passive devices, thereby improving the gain of the amplifier circuit.

[0095] In some embodiments, on the condition that the amplifier circuit can realize the amplification and power splitting function and the dual-frequency and dual-switching function, the structure of the amplifier circuit in the above embodiments can be simplified. For example, the transistors S1 and S3 in the amplifier circuit in the above embodiments can be omitted.

[0096] Taking Figure 6 the amplifier circuit shown omitting the transistors S1 and S3 as an example, the structure of the amplifier circuit after omitting the transistors S1 and S3 is as shown in Figure 10 . Among them, the first input terminal RFin1 of the amplifier circuit is coupled to the source of the transistor S2, and the source of the transistor S2 is coupled to the ground GND through the source matching circuit 1; the second input terminal RFin2 of the amplifier circuit is coupled to the source of the transistor S4, and the source of the transistor S4 is coupled to the ground GND through the source matching circuit 2. At this time, the inter-stage matching circuit 1 and the inter-stage matching circuit 2 are omitted, and the source matching circuit 1 can be used to adjust the source matching of the transistor S2, and the source matching circuit 2 can be used to adjust the source matching of the transistor S4.Figure 10 The working principle of the amplification circuit shown can be referred to Figure 6 the description of the working principle of the amplification circuit shown, which will not be elaborated here.

[0097] Figure 8 The implementation structure of the amplification circuit after omitting transistor S1 and transistor S3 in the amplification circuit shown is as Figure 11 shown, and the circuit connection relationship can be referred to Figure 10 the corresponding description in Figure 11 The working principle of the amplification circuit shown can be referred to Figure 8 the description of the working principle of the amplification circuit shown, which will not be elaborated here.

[0098] In some embodiments, if it is required that the amplification circuit has an amplification and power splitting function, but it is not required that the amplification circuit has a dual-frequency and dual-switching function, then the second output terminal RFout2 and transistor S3 in the amplification circuit of the above embodiments can be omitted.

[0099] Taking Figure 6 the amplification circuit shown after omitting the second output terminal RFout2 and transistor S3 as an example, the structure of the amplification circuit after omitting transistor S3 is as Figure 12 shown. Figure 12 The working principle of the amplification circuit shown can be referred to Figure 7A and its related description, which will not be elaborated here. Figure 8 The implementation structure of the amplification circuit after omitting the second output terminal RFout2 and transistor S3 in the amplification circuit shown can be referred to Figure 12 , the main difference lies in the coupling position of the switching circuit, and the working principle of this amplification circuit can be referred to Figure 9A and its related description, which will not be elaborated here.

[0100] Figure 10 The implementation structure of the amplification circuit after omitting the second output terminal RFout2 and transistor S3 in the amplification circuit shown is, for example, Figure 13 shown, Figure 13 The working principle of the amplification circuit shown can be referred to Figure 7A and its related description, which will not be elaborated here. Figure 11 The implementation structure of the amplification circuit after omitting the second output terminal RFout2 and transistor S3 in the amplification circuit shown can be referred to Figure 13 , the main difference lies in the coupling position of the switching circuit, and the working principle of this amplification circuit can be referred to Figure 9A and its related description, which will not be elaborated here.

[0101] In some embodiments, the above amplification circuit provided by the embodiments of the present application may further include a controller, and the controller can be respectively coupled to the transistors and the switching circuit in the amplification circuit of the above embodiments to control the conduction or cut-off of the transistors and the switching circuit.

[0102] Taking Figure 6 the amplifier circuit shown as an example, the amplifier circuit may include a controller. The controller may be coupled to the gates of transistors S1 to S4 respectively to control the on or off of transistors S1 to S4 in different operating modes of the amplifier circuit. The controller may also be coupled to the control terminal of the switching circuit to control the on or off of the switching circuit in different operating modes of the amplifier circuit. For example, when the switching circuit is implemented by a transistor, the controller may be coupled to the gate of the transistor to control the on or off of the transistor.

[0103] It can be understood that the functions of the above controller can also be split and executed by two or more controllers. For example, one controller controls the on or off of the transistor, and the other controller controls the on or off of the switching circuit.

[0104] When the amplifier circuit is applied to an electronic device, the controller of the amplifier circuit may be coupled to the processor of the electronic device. The processor may send a control instruction to the controller to indicate the operating mode of the amplifier circuit. The controller may accordingly control the on or off of the transistor and the switching circuit in the amplifier circuit of the above embodiments based on the operating mode indicated by the control instruction.

[0105] An embodiment of the present application provides an amplifier chip, including the amplifier circuit provided in any of the above embodiments of the present application.

[0106] An embodiment of the present application further provides an electronic device, including the amplifier circuit provided in any of the above embodiments of the present application or including the above amplifier chip.

[0107] In the embodiments of the present application, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the association relationship of associated objects and indicates that three relationships may exist. For example, A and / or B may represent the case where A exists alone, A and B exist simultaneously, or B exists alone. Wherein A and B may be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after. "At least one of the following" and its similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b, and c may represent: a, b, c, a and b, a and c, b and c, or a and b and c, where a, b, and c may be single or multiple.

[0108] Those of ordinary skill in the art will realize that the various units and algorithm steps described in the embodiments disclosed herein can be implemented by electronic hardware, computer software, or a combination of electronic hardware. Whether these functions are executed in hardware or software depends on the specific application and design constraints of the technical solution. Skilled professionals can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of this application.

[0109] Those skilled in the art can clearly understand that for the sake of convenience and brevity of description, the specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0110] In several embodiments provided in this application, if any function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The foregoing storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memory (hereinafter referred to as ROM), random access memory (hereinafter referred to as RAM), magnetic disks, or optical discs that can store program codes.

[0111] The above is only the specific implementation manner of this application. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in this application and should be covered by the protection scope of this application. The protection scope of this application shall be subject to the protection scope of the claimed rights.

Claims

1. An amplifier circuit, characterized in that, Comprising: A first transistor, a second transistor, a third transistor, a fourth transistor, and a switching circuit; wherein, A first input terminal of the amplifier circuit is coupled to a gate of the first transistor; a source of the first transistor is coupled to ground, and a drain thereof is coupled to a source of the second transistor; a drain of the second transistor is coupled to a first output terminal of the amplifier circuit and is also coupled to a voltage supply terminal; A drain of the third transistor is coupled to a second output terminal of the amplifier circuit and is also coupled to the voltage supply terminal; The source of the second transistor is coupled to the source of the third transistor through the switching circuit; A second input terminal of the amplifier circuit is coupled to a gate of the fourth transistor, a source of the fourth transistor is coupled to ground, and a drain thereof is coupled to the source of the third transistor; The switching circuit is configured to control conduction or disconnection between the source of the second transistor and the source of the third transistor.

2. The circuit according to claim 1, wherein The drain of the second transistor is coupled to the first output terminal of the amplifier circuit, including: The drain of the second transistor is connected to the first output terminal of the amplifier circuit through a matching circuit.

3. The circuit according to claim 1, wherein Further comprising: A controller; The controller is configured to: in a first mode, control the first transistor, the second transistor, the third transistor, and the switching circuit to be conductive, and control the fourth transistor to be non-conductive.

4. The circuit according to claim 3, wherein Further comprising: The amplifier circuit is configured to: in the first mode, a first signal received at the first input terminal is amplified by the first transistor and then split into a first sub-signal and a second sub-signal. The first sub-signal is output to the first output terminal through the second transistor, and the second sub-signal is output to the second output terminal through the switching circuit and the third transistor. The first sub-signal does not pass through the switching circuit.

5. The circuit according to claim 1, wherein Further comprising: A controller; The controller is configured to: in a second mode, control the first transistor, the second transistor, the third transistor, and the fourth transistor to be conductive, and control the switching circuit to be non-conductive.

6. The circuit according to claim 5, wherein, Further comprising: The amplifier circuit is configured to: in the second mode, a second signal in a first frequency band received at the first input terminal is output to the first output terminal through the first transistor and the second transistor, and a third signal in a second frequency band received at the second input terminal is output to the second output terminal through the fourth transistor and the third transistor.

7. The circuit according to any one of claims 1 to 6, characterized in that, The switching circuit includes: a switch; A first terminal of the switch is coupled to the source of the second transistor, and a second terminal thereof is coupled to the source of the third transistor.

8. The circuit according to claim 7, wherein The switch is implemented by a transistor.

9. An amplifier circuit, characterized in that, Comprising: A first transistor, a second transistor, a third transistor, the fourth transistor, and a switching circuit; wherein, A first input terminal of the amplifier circuit is coupled to a gate of the first transistor; a source of the first transistor is coupled to ground, and a drain thereof is coupled to a source of the second transistor; a drain of the second transistor is connected to the first output terminal of the amplifier circuit through a matching circuit and is also coupled to a voltage supply terminal; A drain of the third transistor is coupled to a second output terminal of the amplifier circuit and is also coupled to the voltage supply terminal; The drain of the second transistor is coupled to the drain of the third transistor through the switching circuit; The second input terminal of the amplifying circuit is coupled to the gate of the fourth transistor. The source of the fourth transistor is coupled to ground, and the drain is coupled to the source of the third transistor; The switching circuit is used to control the conduction or disconnection between the drain of the second transistor and the drain of the third transistor.

10. The circuit according to claim 9, wherein, Further comprising: A controller; The controller is configured to: in the first mode, control the first transistor, the second transistor, and the switching circuit to conduct, and control the third transistor and the fourth transistor to turn off.

11. The circuit according to claim 10, characterized in that, Further comprising: The amplifying circuit is configured to: in the first mode, the first signal received at the first input terminal is divided into a first sub-signal and a second sub-signal after being amplified by the first transistor and the second transistor. The first sub-signal is output to the first output terminal through the matching circuit, and the second sub-signal is output to the second output terminal through the switching circuit. The first sub-signal does not pass through the switching circuit.

12. The circuit according to claim 9, characterized in that, Further comprising: A controller; The controller is configured to: in the second mode, control the first transistor, the second transistor, the third transistor, and the fourth transistor to conduct, and control the switching circuit to turn off.

13. The circuit according to claim 12, wherein Further comprising: The amplifying circuit is configured to: in the second mode, the second signal in the first frequency band received at the first input terminal is output to the first output terminal through the first transistor, the second transistor, and the matching circuit. The third signal in the second frequency band received at the second input terminal is output to the second output terminal through the fourth transistor and the third transistor.

14. The circuit according to any one of claims 9 to 13, characterized in that, The switching circuit includes: a switch; The first terminal of the switch is coupled to the drain of the second transistor, and the second terminal is coupled to the drain of the third transistor.

15. The circuit according to claim 14, characterized in that, The switch is implemented by a transistor.

16. An amplifier chip, characterized in that, Comprising the amplifying circuit according to any one of claims 1 to 15.

17. An electronic device, characterized in that, Comprising the amplifying circuit according to any one of claims 1 to 15, or comprising the amplifier chip according to claim 16.

18. The electronic device according to claim 17, wherein Further comprising: A first antenna; The first input terminal of the amplifying circuit is connected to the first antenna; The amplifying circuit is configured to receive, in the first mode, a radio frequency signal in the first frequency band transmitted by the first antenna through the first input terminal.

19. The electronic device according to claim 17, wherein Further comprising: A second antenna; The first input terminal and the second input terminal of the amplifying circuit are respectively connected to the first antenna; The amplifying circuit is configured to receive, in the second mode, a radio frequency signal in the second frequency band transmitted by the second antenna through the first input terminal, and receive a radio frequency signal in the third frequency band transmitted by the second antenna through the second input terminal.

20. The electronic device according to claim 17, wherein Further comprising: A third antenna and a fourth antenna; The first input terminal of the amplifying circuit is connected to the third antenna, and the second input terminal of the amplifying circuit is connected to the fourth antenna; The amplifying circuit is configured to receive, in the second mode, a radio frequency signal in the fourth frequency band transmitted by the third antenna through the first input terminal, and receive a radio frequency signal in the fifth frequency band transmitted by the fourth antenna through the second input terminal.

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