High-frequency transceiver chip device based on heterogeneous integration of on-chip antenna and pulse source

Abstract

The present invention discloses a high-frequency transceiver chip device based on heterogeneous integration of an on-chip antenna and a pulse source, which relates to the technical field of antennas; it includes: an excitation structure for exciting high-frequency signals through a photoconductive switch; a transmission structure for low-loss transmission of high-frequency signals; a collection structure for collecting spatial electromagnetic wave signals converted by a radiation antenna; a radiation structure for realizing the mutual conversion between on-chip current and spatial electromagnetic waves; the excitation structure, the transmission structure, the collection structure, and the radiation structure are integrally integrated on the same chip; this high-frequency transceiver chip device based on heterogeneous integration of an on-chip antenna and a pulse source realizes the radiation and reception of high-frequency electromagnetic waves above 110 GHz by heterogeneously integrating a high-frequency pulse source and a millimeter-wave antenna; by optimizing the transfer and transmission structure design of the photoconductive substrate, the transmission loss of high-frequency signals is reduced, and the radiation power is improved; the reception function of high-frequency electromagnetic waves is realized, and the application range of the device is expanded.

Description

Technical Field

[0001] The present invention relates to the technical field of antennas, and specifically to a high-frequency transceiver chip device based on heterogeneous integration of on-chip antennas and pulse sources. Background Art

[0002] With the advent of the big data era, people's demand for high-speed data transmission is increasing day by day, and the frequency band of wireless communication is gradually developing towards high-frequency bands. As a classic passive device, an antenna can realize the mutual conversion between guided high-frequency alternating current and space-radiated electromagnetic waves, and is widely used in various fields. However, with the increase in frequency, the traditional passive antenna design faces many challenges.

[0003] At present, there are mature millimeter-wave band passive antenna design schemes in the industry. However, due to the leakage effect caused by size miniaturization, the operating frequency of electrical pulse sources is limited to below 110 GHz. Without the support of high-frequency pulse sources, the application of high-frequency passive antennas is greatly restricted, thereby hindering the development of high-frequency wireless communication.

[0004] To solve this problem, researchers have proposed a variety of novel high-frequency electromagnetic wave emitting devices, such as photoconductive antennas, spin terahertz devices, photodiode antennas, etc. These devices do not require external current source excitation and break through the frequency limitation of traditional current pulse sources. Under the excitation of laser, these devices use the photoelectric conversion characteristics of the substrate material to autonomously generate alternating current, and then form electromagnetic wave radiation. The latest research shows that such devices can generate electromagnetic wave radiation at terahertz frequencies.

[0005] However, these novel devices still face the following problems:

[0006] Difficulty in power improvement: Due to the limitation of photoconductive materials, the radiation power is low and it is difficult to meet the actual application requirements.

[0007] Limited modulation methods: The existing modulation means are few, which limits their application in complex communication systems.

[0008] Unable to be used as a receiving antenna: These devices are mainly used for transmission and it is difficult to realize the function of receiving high-frequency electromagnetic waves.

[0009] Therefore, a high-frequency transceiver chip device based on heterogeneous integration of on-chip antennas and pulse sources is proposed to solve the above problems. Summary of the Invention

[0010] The object of the present invention is to provide a high-frequency transceiver chip device based on heterogeneous integration of on-chip antennas and pulse sources. By using the interlayer transfer technology of the photoconductive substrate layer, the high-frequency pulse source and the millimeter-wave antenna are heterogeneously integrated on the same chip, solving the frequency bottleneck problem of traditional passive antennas in the high-frequency band, and at the same time overcoming the problems of power, modulation and reception limitations of novel photoconductive devices.

[0011] To achieve the above object, the present invention provides the following technical solutions: A high-frequency transceiver chip device based on heterogeneous integration of an on-chip antenna and a pulse source, comprising:

[0012] A photoconductive substrate: The photoconductive substrate is peeled off by a chemical reagent and transferred onto a substrate with low dielectric loss, and the substrate with low dielectric loss includes silicon, glass or PCB material;

[0013] A radiation structure: The radiation structure includes a passive antenna for converting high-frequency electrical signals into space electromagnetic waves;

[0014] A collection structure: The collection structure includes a photoconductive switch for receiving high-frequency electromagnetic wave signals. The photoconductive switch is arranged on the photoconductive substrate, and the photoconductive switch includes a gap electrode. The gap electrode transmits the received electrical signal to the signal collection outlet through laser irradiation;

[0015] A transmission structure: The transmission structure includes a coplanar waveguide for transmitting high-frequency electrical signals;

[0016] An excitation structure: For generating high-frequency electrical pulses, the excitation structure includes a photoconductive switch. The photoconductive switch is arranged on the photoconductive substrate, and the photoconductive switch includes a gap electrode. The gap electrode excites picosecond electrical pulses through laser irradiation;

[0017] The radiation structure, the collection structure, the transmission structure and the excitation structure are integrally integrated on the same chip, and through the substrate material and the device structure, the effective radiation and reception of high-frequency electromagnetic waves are realized.

[0018] Further, the photoconductive switch of the excitation structure excites picosecond electrical pulses through a DC bias voltage and laser irradiation. The DC bias voltage is provided from the lower end, and the laser irradiates the photoconductive substrate material between the electrode gaps to generate high-frequency electrical pulses.

[0019] Further, the coplanar waveguide of the transmission structure is optimized and designed by electromagnetic simulation software. For different radiation antenna input requirements, different transmission structures are designed to reduce the transmission loss of high-frequency signals.

[0020] Further, the photoconductive switch of the collection structure transmits the received electrical signal to the signal collection outlet through laser irradiation, and the signal collection outlet is connected to the radiation structure to realize the reception of high-frequency electromagnetic waves.

[0021] Further, the passive antenna of the radiation structure is optimized and designed by electromagnetic simulation software to realize the mutual conversion between on-chip current and space electromagnetic waves.

[0022] Furthermore, the stripping thickness of the photoconductive substrate is 1 um, which is transferred to a low dielectric loss substrate and covers at least the excitation structure and the collection structure regions.

[0023] Furthermore, the device further includes an impedance matching design for reducing the high-frequency signal transmission loss caused by the sudden change in the material transmission properties at the interconnect interface of different substrate materials.

[0024] Furthermore, the device excites the photoconductive switch by laser irradiation to generate high-frequency electrical pulses, and converts the high-frequency electrical signals into spatial electromagnetic waves through a passive antenna to achieve the radiation and reception of high-frequency electromagnetic waves.

[0025] Furthermore, the operating frequency range of the device is above 110 GHz and is applicable to wireless communication and radar ranging systems.

[0026] Compared with the prior art, the present invention provides a high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source, having the following beneficial effects:

[0027] This high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source realizes the radiation and reception of high-frequency electromagnetic waves above 110 GHz by heterogeneous integration of a high-frequency pulse source and a millimeter-wave antenna; by optimizing the transfer and transmission structure design of the photoconductive substrate, the high-frequency signal transmission loss is reduced and the radiation power is enhanced; through the design of the collection structure, the reception function of high-frequency electromagnetic waves is realized, expanding the application range of the device; integrating the high-frequency pulse source and the millimeter-wave antenna on the same chip reduces the device size and improves the integration degree. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention, and those of ordinary skill in the art can obtain other drawings without creative efforts based on these drawings.

[0029] Figure 1 It is a schematic diagram of the structure of the photoconductive substrate to be stripped of the high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source of the present invention;

[0030] Figure 2 It is a schematic diagram of the substrate stripping and transfer process of the high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source of the present invention;

[0031] Figure 3 It is a schematic diagram of the metal layer structure of the high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source of the present invention after the transfer and device processing are completed;

[0032] Figure 4 This is a schematic structural diagram of a high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source according to the present invention.

[0033] In the figure: 1, radiation structure; 2, acquisition structure; 3, transmission structure; 4, excitation structure. Specific embodiments

[0034] To make the above objects, features, and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings of the specification.

[0035] In the following description, many specific details are set forth to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0036] Secondly, the so-called "one embodiment" or "embodiment" herein refers to a specific feature, structure, or characteristic that can be included in at least one implementation manner of the present invention. The appearances of "in one embodiment" in different places in this specification do not all refer to the same embodiment, nor are they separate or selectively exclusive embodiments from other embodiments.

[0037] Please refer to Figures 1-4 , due to the good absorption of laser energy by the lattice, the thickness of the actual working area of a conventional photoconductive substrate is only 1 um in the outermost layer, and a sacrificial layer is added between two layers in some photoconductive substrates; the sacrificial layer can be etched with chemical reagents to achieve the peeling of the 1-um-thick outermost layer of the photoconductive substrate; the peeled outermost-layer photoconductive substrate is transferred to the surface of other substrates such as silicon, glass, or PCB, and device processing is achieved through integrated circuit processing. Here, since the area of the peeled photoconductive substrate can be freely defined, it is also possible to transfer the substrate only in a small area in the region of the photoconductive switch device.

[0038] The present invention discloses a high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source, including:

[0039] Photoconductive substrate: The photoconductive substrate is peeled off with chemical reagents and transferred to a substrate with low dielectric loss, and the substrate with low dielectric loss includes silicon, glass, or PCB materials;

[0040] Radiation structure 1: The radiation structure 1 includes a passive antenna for converting a high-frequency electrical signal into a spatial electromagnetic wave;

[0041] Collection structure 2: The collection structure 2 includes a photoconductive switch for receiving high-frequency electromagnetic wave signals. The photoconductive switch is disposed on a photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode transmits the received electrical signal to the signal collection outlet through laser irradiation;

[0042] Transmission structure 3: The transmission structure 3 includes a coplanar waveguide (GSG) for transmitting high-frequency electrical signals;

[0043] Excitation structure 4: For generating high-frequency electrical pulses. The excitation structure 1 includes a photoconductive switch. The photoconductive switch is disposed on a photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode excites picosecond electrical pulses through laser irradiation;

[0044] The radiation structure 1, collection structure 2, transmission structure 3, and excitation structure 4 are integrally integrated on the same chip, and through the substrate material and device structure, effective radiation and reception of high-frequency electromagnetic waves are achieved.

[0045] Specifically, the photoconductive switch of the excitation structure 4 excites picosecond electrical pulses through a DC bias voltage and laser irradiation. The DC bias voltage is provided from the lower end, and the photoconductive substrate material between the laser irradiation electrodes generates high-frequency electrical pulses.

[0046] Specifically, the coplanar waveguide (GSG) of the transmission structure 3 is optimized and designed through electromagnetic simulation software. Different transmission structures 3 are designed according to different radiation antenna input requirements to reduce the transmission loss of high-frequency signals.

[0047] Specifically, the photoconductive switch of the collection structure 2 transmits the received electrical signal to the signal collection outlet through laser irradiation, and the signal collection outlet is connected to the radiation structure 1 to achieve the reception of high-frequency electromagnetic waves.

[0048] Specifically, the passive antenna of the radiation structure 1 is optimized and designed through electromagnetic simulation software to achieve the mutual conversion between on-chip current and spatial electromagnetic waves.

[0049] Specifically, the peeling thickness of the photoconductive substrate is 1um, and it is transferred to a low dielectric loss substrate, and at least covers the regions of the excitation structure 4 and the collection structure 2.

[0050] Specifically, the device further includes an impedance matching design for reducing the high-frequency signal transmission loss caused by the sudden change in material transmission properties at the interconnect interface of different substrate materials.

[0051] Specifically, the device excites the photoconductive switch through laser irradiation to generate high-frequency electrical pulses, and converts the high-frequency electrical signals into spatial electromagnetic waves through the passive antenna to achieve the radiation and reception of high-frequency electromagnetic waves.

[0052] Specifically, the operating frequency range of the device is above 110 GHz, which is applicable to wireless communication and radar ranging systems.

[0053] Stripping and transfer of the photoconductive substrate: Corrode the sacrificial layer of the photoconductive substrate using chemical reagents to strip the outermost 1-μm-thick photoconductive substrate; transfer the stripped photoconductive substrate onto substrates with low dielectric loss such as silicon, glass, and PCB, and realize device processing through integrated circuit processing.

[0054] Design and implementation of the excitation structure 4: Design gap electrodes on the photoconductive substrate, and under the premise of applying a DC bias in advance, excite picosecond electrical pulses through laser irradiation.

[0055] Optimization of the transmission structure 3: Adopt a coplanar waveguide (GSG) design, optimize the transmission line through electromagnetic simulation software to reduce the transmission loss of high-frequency signals; design different transmission structures 3 according to the input requirements of different radiation antennas.

[0056] Design and implementation of the acquisition structure 2: Design gap electrodes on the photoconductive substrate, with the left end being the signal acquisition outlet and the right end being the signal input port; realize signal acquisition and transmission through laser irradiation.

[0057] Design and implementation of the radiation structure 1: Adopt a passive antenna design, optimize through electromagnetic simulation software, and realize the mutual conversion between on-chip current and spatial electromagnetic waves.

[0058] Heterogeneous integration design: Adopt an interlayer stripping and transfer technology to integrally integrate the pulse source and the passive antenna on the same chip, avoiding the transmission loss of electrical signals between heterogeneous devices. Optimize the device structure and material layout through simulation design software (such as HFSS) to ensure the transmission efficiency and impedance matching of high-frequency signals. Example 1

[0059] Substrate material treatment: Select GaAs as the photoconductive substrate material, strip its outermost layer (about 1-μm thick) through chemical etching method, and transfer it to the surface of the silicon substrate; process the required antenna structure and transmission lines on the silicon substrate to ensure the transmission efficiency of high-frequency signals.

[0060] Design of the excitation structure 4: Set gap electrodes on the stripped photoconductive substrate, and realize the excitation of picosecond electrical pulses through DC bias and laser irradiation; optimize the parameters of the electrode gap and the photoconductive material to improve the frequency and power of the excitation signal.

[0061] Design of the transmission structure 3: Design a low-loss coplanar waveguide using electromagnetic simulation software to minimize the loss of high-frequency signals during transmission; adjust the structural parameters of the coplanar waveguide according to the input requirements of the radiation antenna to achieve the best transmission effect.

[0062] Design of the acquisition structure 2: A photoconductive switch is set at the acquisition end to receive the spatial electromagnetic wave signals converted by the radiation antenna; the electrode design of the acquisition structure 2 is optimized to improve the sensitivity and efficiency of signal acquisition.

[0063] Design of the radiation structure 1: A passive antenna is designed through electromagnetic simulation software to achieve efficient conversion between on-chip current and spatial electromagnetic waves; the structural parameters of the antenna are optimized to improve the radiation efficiency and directivity of the antenna.

[0064] Heterogeneous integration: By means of interlayer peeling, the excitation structure 4, the transmission structure 3, the acquisition structure 2 and the radiation structure 1 are integrally integrated on the same chip; the overall layout of the device is optimized through simulation design software to ensure the transmission efficiency and impedance matching of high-frequency signals. Embodiment 2

[0065] Selection of substrate material: Glass is selected as the substrate material with low dielectric loss, and the peeled photoconductive substrate is transferred to the glass surface; the required antenna structure and transmission lines are processed on the glass substrate to ensure the transmission efficiency of high-frequency signals.

[0066] Optimization of device structure: In the excitation structure 4 and the acquisition structure 2, the parameters of the photoconductive material and the electrode design are optimized to improve the excitation and acquisition efficiency of signals; in the transmission structure 3, a low-loss transmission line design is adopted to reduce the transmission loss of high-frequency signals; in the radiation structure 1, the structural parameters of the antenna are optimized to improve the radiation efficiency and directivity of the antenna.

[0067] System integration and testing: The excitation structure 4, the transmission structure 3, the acquisition structure 2 and the radiation structure 1 are integrally integrated on the same chip to form a complete high-frequency transceiver chip device.

[0068] The chip device is tested to verify its radiation and reception performance of high-frequency electromagnetic waves and ensure that the overall performance of the system meets the design requirements.

[0069] Through the technical solution of this application, the integration of the high-frequency antenna and the pulse source realizes the high-efficiency radiation and reception of high-frequency electromagnetic waves; Peeling of the photoconductive substrate: A 1-μm thin substrate is cut from the sacrificial layer by etching technology to facilitate its transfer to a low-loss substrate; Optimization of the low-voltage transmission line: The low-loss transmission line design obtained by simulating through simulation software; Different types of radiation structures 1, such as surface plasmons, dipole antennas, etc., need to be optimized according to the simulation results; Laser excitation and transmission structure 3: The laser excites the photoconductive material to generate high-frequency pulses, and the low-loss transmission line minimizes the loss that occurs during signal transmission; Signal detection and output: The photoconductive switch in the acquisition structure 2 ensures that after receiving the signal from the antenna, the high-frequency signal is transmitted back to the left-end area, and after the signal is detected in this area, the corresponding electrical signal is emitted by the laser.

[0070] The following technical effects can be achieved through the above technical solutions:

[0071] Breaking through the frequency limit: By using a photoconductive switch to excite high-frequency signals, the frequency bottleneck of traditional electrical pulse sources is broken through, and high-frequency electromagnetic wave radiation and reception above 110 GHz can be supported; Reducing transmission loss: By optimizing the electrode design and substrate material of transmission structure 3, the loss of high-frequency signals during transmission is significantly reduced, improving the overall efficiency of the system.

[0072] Improving power output: Through integrated design, the transmission loss of high-frequency signals between heterogeneous devices is reduced, enabling higher power output to meet the actual needs of high-frequency communication; Flexible modulation and reception functions: Combining with the design scheme of a passive antenna, flexible modulation and reception functions of high-frequency signals are realized, expanding the application scenarios of high-frequency communication; Miniaturization and integration: By adopting on-chip integration technology, miniaturization and integration of high-frequency transceiver chips are achieved, reducing the complexity and cost of the system, and improving the reliability and stability of the system.

[0073] In summary, the high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source realizes the radiation and reception of high-frequency electromagnetic waves above 110 GHz by heterogeneously integrating a high-frequency pulse source and a millimeter-wave antenna; By optimizing the transfer of the photoconductive substrate and the design of transmission structure 3, the transmission loss of high-frequency signals is reduced, and the radiation power is enhanced; Through the design of acquisition structure 2, the reception function of high-frequency electromagnetic waves is realized, expanding the application scope of the device; Integrating the high-frequency pulse source and the millimeter-wave antenna on the same chip reduces the device size and improves the integration level.

[0074] It should be understood that each part of the present invention can be implemented by hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one or a combination of the following well-known technologies in the art can be used: discrete logic circuits with logic gate circuits for implementing logical functions on data signals, application-specific integrated circuits with appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0075] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not restrictive. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention, and they should all be covered within the scope of the claims of the present invention.

Claims

1. A high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source, characterized in that Comprising: Photoconductive substrate: The photoconductive substrate is peeled off by chemical reagents and transferred onto a substrate with low dielectric loss, and the substrate with low dielectric loss includes silicon, glass or PCB material; Radiation structure: The radiation structure includes a passive antenna for converting high-frequency electrical signals into spatial electromagnetic waves; Collection structure: The collection structure includes a photoconductive switch for receiving high-frequency electromagnetic wave signals. The photoconductive switch is arranged on the photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode transmits the received electrical signal to the signal collection outlet through laser irradiation; Transmission structure: The transmission structure includes a coplanar waveguide for transmitting high-frequency electrical signals; Excitation structure: For generating high-frequency electrical pulses, the excitation structure includes a photoconductive switch. The photoconductive switch is arranged on the photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode excites picosecond electrical pulses through laser irradiation; The radiation structure, collection structure, transmission structure and excitation structure are integrally integrated on the same chip, and through the substrate material and device structure, the effective radiation and reception of high-frequency electromagnetic waves are realized.

2. The high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source according to claim 1, characterized in that: The photoconductive switch of the excitation structure excites picosecond electrical pulses through DC bias voltage and laser irradiation. The DC bias voltage is provided from the lower end, and the photoconductive substrate material between the laser irradiation electrodes generates high-frequency electrical pulses.

3. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source according to claim 1, wherein: The coplanar waveguide of the transmission structure is optimized and designed by electromagnetic simulation software. For different radiation antenna input requirements, different transmission structures are designed to reduce the transmission loss of high-frequency signals.

4. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source according to claim 1, characterized in that: The photoconductive switch of the collection structure transmits the received electrical signal to the signal collection outlet through laser irradiation, and the signal collection outlet is connected to the radiation structure to realize the reception of high-frequency electromagnetic waves.

5. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source according to claim 1, wherein: The passive antenna of the radiation structure is optimized and designed by electromagnetic simulation software to realize the mutual conversion between on-chip current and spatial electromagnetic waves.

6. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source according to claim 1, wherein: The peeling thickness of the photoconductive substrate is 1um, and it is transferred onto a substrate with low dielectric loss and at least covers the regions of the excitation structure and the collection structure.

7. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna and pulse source according to claim 1, characterized in that: The device further includes an impedance matching design for reducing the high-frequency signal transmission loss caused by the sudden change in material transmission properties at the interconnection interface of different substrate materials.

8. The high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source according to claim 1, wherein: The device excites a photoconductive switch through laser irradiation to generate high-frequency electrical pulses, and converts the high-frequency electrical signals into spatial electromagnetic waves through a passive antenna to realize the radiation and reception of high-frequency electromagnetic waves.

9. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna and pulse source according to claim 1, characterized in that: The operating frequency range of the device is above 110GHz and is applicable to wireless communication and radar ranging systems.

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