Wafer bearing device and epitaxial equipment

Abstract

The invention discloses a wafer bearing device and epitaxial equipment thereof, the wafer bearing device comprises a base, a base disc and a tray, an annular groove is formed in the base disc, the annular groove is communicated with the upper surface of the base disc, the annular groove is communicated with the side surface of the base disc, and at least part of the tray is located in the annular groove and supported by the annular groove; the distance between the groove bottom face of the annular groove and the lower surface of the base disc in the vertical direction of the wafer bearing device is a preset distance, at least part of the tray extends downwards to form a surrounding part, the upper end of the surrounding part is flush with the groove bottom face of the annular groove, and at least part of the surrounding part surrounds the base disc. The ratio of the height H1 of the surrounding part in the vertical direction of the wafer bearing device to the preset distance D1 ranges from 0.25 to 0.5. The epitaxial equipment comprises the wafer bearing device. Through the arrangement, the uniformity of the wafer temperature in the reaction process of the epitaxial equipment can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a wafer carrier device and an epitaxial device. Background Art

[0002] An epitaxial device is a device for growing a single crystal thin film on a wafer. The types of such devices mainly include chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, and atomic layer deposition. Among them, the epitaxial device of chemical vapor deposition includes a reaction chamber for the reaction of raw material gases. Inside the reaction chamber, there are a wafer carrier device and a heating component. The heating component can heat the wafer carrier device, and thus indirectly control the temperature of the wafer through heat conduction, so that the wafer can be maintained within the reaction temperature range of the raw material gases. After the raw material gases are heated and reacted, a thin film is deposited on the wafer.

[0003] Among them, the wafer carrier device includes a base plate and a tray. The base plate is used to carry the wafer during the reaction of the epitaxial device, and the tray is used to transport the wafer. During the reaction of the epitaxial device, the heat generated by the heating component will be conducted to the base plate and the tray, and then conducted to the wafer through the base plate and the tray. If the heat differences conducted from the base plate and the tray to the wafer are too large, it will cause too large temperature differences of the wafer during the reaction of the epitaxial device.

[0004] In addition, since the reaction deposition efficiency of the raw material gases on wafers at different temperatures is different, if there are large temperature differences on the wafer during the reaction of the epitaxial device, the thickness of the thin film deposited on the wafer will be uneven, resulting in poor uniformity of the thin film deposited by the epitaxial device.

[0005] Therefore, how to improve the temperature uniformity of the wafer during the reaction of the epitaxial device is a technical problem that those skilled in the art urgently need to solve. Summary of the Invention

[0006] In order to solve the deficiencies of the prior art, the purpose of the present application is to provide a wafer carrier device and an epitaxial device, which have high temperature uniformity of the wafer during the reaction process.

[0007] To achieve the above purpose, the present application adopts the following technical solutions: A wafer carrier device, which includes a base, a base plate, and a tray. The base plate is supported by the base and can rotate relative to the base. The tray is supported by the base plate and is at least partially disposed around the base plate. The base plate is formed with an annular groove, which communicates with the upper surface of the base plate and also communicates with the side surface of the base plate. At least a part of the tray is located within the annular groove and is supported by the annular groove. The distance between the bottom surface of the annular groove and the lower surface of the base plate in the up-and-down direction of the wafer carrier device is a preset distance. At least a part of the tray extends downward to form a surrounding portion, the upper end of the surrounding portion is flush with the bottom surface of the annular groove, the surrounding portion is at least partially disposed around the base plate, and the ratio range of the height H1 of the surrounding portion in the up-and-down direction of the wafer carrier device to the preset distance D1 is from 0.25 to 0.5.

[0008] Further, at least a part of the tray extends away from the base plate to form an annular extension portion, and the ratio range of the height H2 of the annular extension portion in the up-and-down direction of the wafer carrier device to the preset distance D1 is from 0.2 to 0.5.

[0009] Further, the tray has a bearing surface for bearing the wafer, and the height of the bearing surface is lower than the height of the upper surface of the base plate.

[0010] Further, the height difference △H between the bearing surface and the upper surface of the base plate ranges from 0.1 mm to 0.3 mm.

[0011] Further, the tray includes an abutting portion located within the annular groove. The lower surface of the abutting portion contacts the bottom surface of the annular groove, and at least one first heat insulation groove is formed in the abutting portion, and the opening of the first heat insulation groove is located on the lower surface of the abutting portion.

[0012] Further, the tray is formed with a second heat insulation groove, and the opening of the second heat insulation groove is located on the upper surface of the tray.

[0013] Further, the distance between the abutting portion and the inner diameter side wall of the annular groove is a preset gap D2. The inner diameter of the annular groove is smaller than the diameter of the wafer. Define the difference between the inner diameter of the annular groove and the diameter of the wafer as a preset difference, and the preset gap D2 does not exceed one-fourth of the preset difference.

[0014] Further, at least a part of the tray extends upward to form an annular protruding portion, and an accommodating space for accommodating the wafer is formed by surrounding the annular protruding portion. The inner circle radius of the annular protruding portion is greater than the radius of the wafer, and the difference range between the inner circle radius of the annular protruding portion and the radius of the wafer is from 1 mm to 2 mm.

[0015] Further, the height H1 of the surrounding portion in the up-and-down direction of the wafer carrier device is greater than the height H2 of the annular extension portion in the up-and-down direction of the wafer carrier device. The tray includes an abutting portion located within the annular groove, and the height H1 of the surrounding portion in the up-and-down direction of the wafer carrier device is greater than the height H3 of the abutting portion in the up-and-down direction of the wafer carrier device.

[0016] To achieve the above object, the present application adopts the following technical solutions: An epitaxial device, which includes a reaction chamber and the above-mentioned wafer carrier disposed inside the reaction chamber.

[0017] The above-mentioned wafer carrier and epitaxial device can reduce the temperature of the tray, thereby reducing the temperature conducted from the tray to the edge of the wafer, which is beneficial to improving the uniformity of the wafer temperature during the reaction process of the epitaxial device, and thus improving the uniformity of the thin film deposited on the wafer. Description of the Drawings

[0018] Figure 1 It is a schematic structural diagram of the wafer carrier according to an embodiment of the present application; Figure 2 It is a schematic cross-sectional view of the wafer carrier according to an embodiment of the present application; Figure 3 It is a schematic diagram of the temperature of the wafer of the wafer carrier according to an embodiment of the present application; Figure 4 is Figure 2 an enlarged schematic view of part A in Figure 5 It is a schematic combined view of the wafer carrier, epitaxial device and wafer according to an embodiment of the present application.

[0019] Wherein, 100, wafer carrier; 11, base; 111, rotating shaft with air channels; 1111, air inlet channel; 1112, air inlet; 1113, air outlet; 12, base plate; 121, annular groove; 13, tray; 131, surrounding part; 132, annular extension part; 133, bearing surface; 134, abutting part; 1341, first heat insulation groove; 135, annular protrusion; 1351, accommodating space; 136, second heat insulation groove; 14, gap; 15, air flow gap; 200, wafer; 300, epitaxial device; 31, upper cover; 32, cavity side wall; 33, bottom plate; 34, automation component; 35, reaction chamber; 36, heating component. Detailed Embodiments

[0020] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the specific embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application.

[0021] It should be noted that the terms "first", "second" and similar terms used in the description and claims of this application do not denote any order, quantity or importance, but are merely used to distinguish different components. Similarly, terms such as "a" or "an" do not denote a quantity limitation, but rather indicate the presence of at least one. "Plural" or "several" means at least two. Unless otherwise indicated, terms such as "front", "rear", "left", "right", "lower" and / or "upper" are for convenience of description only and are not limited to a single position or a spatial orientation. Terms such as "comprising" or "including" mean that the elements or items appearing before "comprising" or "including" cover the elements or items listed after "comprising" or "including" and their equivalents, and do not exclude other elements or items. Terms such as "connected" or "coupled" are not limited to physical or mechanical connections, and may include electrical connections, whether direct or indirect.

[0022] The singular forms "a", "the" and "said" used in the description and appended claims of this application are also intended to include the plural forms, unless the context clearly dictates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0023] As Figure 1 and Figure 2 shown, this application provides a wafer carrier device 100, which includes a base 11, a base plate 12 and a tray 13. The base 11 serves as the basic framework of the wafer carrier device 100 for supporting the base plate 12 and the tray 13. The base plate 12 is used to support the wafer 200 during the reaction process. The tray 13 is used to support the wafer 200 when transporting the wafer 200.

[0024] To clearly illustrate the technical solution of this application, the upper and lower as Figure 2 shown are also defined.

[0025] Specifically, the base plate 12 is supported by the base 11 and can rotate relative to the base 11, so that the wafer 200 located on the base plate 12 can rotate during the reaction process, thereby improving the uniformity of the thin film deposited on the wafer 200.

[0026] More specifically, the tray 13 is supported by the base plate 12 and is disposed at least partially around the base plate 12. With such an arrangement, the tray 13 can surround the wafer 200, which is beneficial for the tray 13 to carry the wafer 200 and drive the wafer 200 to move, thereby realizing the transportation of the wafer 200.

[0027] It should be noted that in the embodiments of the present application, the base 11 can be directly heated, and the heat can be conducted from the base 11 to the base plate 12 and the tray 13. Moreover, in the present application, the heat of the base plate 12 is basically conducted to the center of the wafer 200, and the heat of the tray 13 is basically conducted to the edge of the wafer 200.

[0028] More specifically, an annular groove 121 is formed in the base plate 12. The annular groove 121 communicates with the upper surface of the base plate 12 and also communicates with the side surface of the base plate 12. Specifically, at least a part of the tray 13 is located in the annular groove 121 and is supported by the annular groove 121. With such a setting, the base plate 12 can support the tray 13 through the annular groove 121.

[0029] Exemplarily, the tray 13 is in the shape of a major arc and is placed on the annular groove 121 so that the base plate 12 can support the tray 13.

[0030] Exemplarily, the tray 13 is in a closed annular shape and is placed on the annular groove 121 so that the base plate 12 can support the tray 13.

[0031] In the present embodiment, the tray 13 includes an abutting portion 134 which is arranged around the base plate 12. The abutting portion 134 is used for the abutment between the tray 13 and the base plate 12. Specifically, the abutting portion 134 is located in the annular groove 121, and the lower surface of the abutting portion 134 contacts the bottom surface of the annular groove 121, so that the base plate 12 supports the tray 13 through the abutting portion 134.

[0032] More specifically, at least a part of the tray 13 extends downward to form a surrounding portion 131 which is at least partly arranged around the base plate 12. With such a setting, it is beneficial to fit the tray 13 onto the base plate 12 through the surrounding portion 131. Secondly, the fitting connection method is more convenient than other connection methods, which is conducive to improving the installation convenience of the tray 13 and the base plate 12, and further conducive to the quick disassembly and assembly of the tray 13 and the base plate 12, so as to facilitate the quick disassembly and assembly of the wafer 200 between the wafer carrying devices 100.

[0033] In the present embodiment, the distance between the bottom surface of the annular groove 121 and the lower surface of the base plate 12 in the up and down direction of the wafer carrying device 100 is defined as a preset distance D1. Among them, the ratio range of the height H1 of the surrounding portion 131 in the up and down direction of the wafer carrying device 100 to the preset distance D1 is 0.25 to 0.5. It should be noted that the surrounding portion 131 and the abutting portion 134 are integrally formed, and the upper end of the surrounding portion 131 and the lower end of the abutting portion 134 are integrally formed. Among them, the upper end of the surrounding portion 131 is flush with the bottom surface of the annular groove 121.

[0034] Specifically, the ratio range of the height H1 of the surrounding portion 131 in the up and down direction of the wafer carrier device 100 to the preset distance D1 is 0.3 to 0.45. More specifically, the ratio range of the height H1 of the surrounding portion 131 in the up and down direction of the wafer carrier device 100 to the preset distance D1 is 0.36 to 0.4. Through the above settings, a gap 14 can be formed between the surrounding portion 131 and the base 11, and floating gas can flow in the gap 14. Since the thermal conductivity of the gas is relatively low, the heat conducted from the base 11 to the tray 13 can be reduced, which is beneficial to reducing the temperature of the tray 13. Furthermore, the heat conducted from the tray 13 to the edge of the wafer 200 can be reduced, so as to lower the temperature of the edge of the wafer 200, and avoid excessive temperature difference of the wafer 200 due to too high temperature at the edge of the wafer 200, which is beneficial to improving the temperature uniformity of the wafer 200 during the reaction process of the epitaxial device 300, and thus improving the uniformity of the thin film deposited by the epitaxial device 300.

[0035] It should be noted that in this application, the thermal conductivity of the tray 13 is greater than that of the base plate 12. Therefore, the heat conducted from the tray 13 to the edge of the wafer 200 is greater than the heat conducted from the base plate 12 to the center of the wafer 200. Therefore, in this application, by reducing the heat of the tray 13, the heat conducted from the tray 13 to the edge of the wafer 200 can be reduced, thereby improving the temperature uniformity of the wafer 200.

[0036] It should be noted that the wafer carrier device 100 in the embodiment of this application is an air-floating device, that is, floating gas fills between the base 11, the base plate 12 and the tray 13, so that the base plate 12 and the tray 13 can be air-floated on the base 11, and an air flow gap 15 for circulating the floating gas is formed between the tray 13 and the base 11. Among them, the gap 14 communicates with the air flow gap 15, so that the gap 14 can be filled with floating gas. And because the thermal conductivity of the gas is small, therefore, in this application, a gap 14 is formed between the surrounding portion 131 and the base 11 to reduce the heat conducted from the base 11 to the tray 13, which is beneficial to reducing the temperature of the tray 13, and reducing the heat conducted from the tray 13 to the edge of the wafer 200, which is beneficial to improving the temperature uniformity of the wafer 200.

[0037] Secondly, through the above settings, it can be avoided that the ratio of the height H1 to the preset distance D1 is too large, resulting in too small height of the surrounding portion 131 relative to the base 11, thereby avoiding too small height leading to too small gap 14, and further avoiding too small gap 14 leading to too little floating gas between the base 11 and the tray 13, so as to avoid that the floating gas between the base 11 and the tray 13 cannot meet the temperature reduction requirement of the tray 13, which is beneficial to reducing the temperature difference between the tray 13 and the base plate 12, and then beneficial to improving the uniformity of the thin film deposited on the wafer 200.

[0038] In addition, it is also possible to avoid the ratio of the height H1 to the preset distance D1 being too small, which may cause the surrounding part 131 to be too small, thereby preventing the surrounding part 131 from being too small and reducing the stability of the tray 13 when it is set on the base plate 12. Furthermore, this is conducive to improving the connection stability between the tray 13 and the base plate 12, so as to enhance the stability of the wafer 200 during the reaction process.

[0039] It should be noted that the floating gas in the embodiments of the present application is composed of one or more of argon and helium. It can be understood that argon and helium have stable chemical properties, so that the floating gas will not react with the raw material gas used to make the thin film, which is conducive to improving the purity of the thin film. In addition, the floating gas can also be other gases that do not react with the raw material gas for making the thin film, and the present application does not limit this.

[0040] As Figure 3 shown, as an implementation manner, when the epitaxial device 300 reacts on the wafer carrier device 100 provided with the gap 14 and the wafer carrier device without the gap 14, the temperature of the wafer 200 on the wafer carrier device 100 provided with the gap 14 and the temperature of the wafer on the wafer carrier device without the gap 14 are detected. Define any diameter of the wafer as the detection diameter, the abscissa is the detection position set along the detection diameter, and the ordinate is the temperature at the wafer detection position at any reaction moment. Among them, the solid line segment in the coordinate is the fitting line segment of the wafer temperature of the wafer carrier device without the air flow gap changing with the detection position, and the dotted line segment in the coordinate is the fitting line segment of the temperature of the wafer 200 of the wafer carrier device 100 provided with the gap 14 changing with the detection position. △T1 is the difference between the maximum value and the minimum value of the wafer temperature of the wafer carrier device without the gap 14, and △T2 is the difference between the maximum value and the minimum value of the temperature of the wafer 200 of the wafer carrier device 100 provided with the gap 14. Among them, △T2 is less than △T1. It can be understood that from Figure 3 it can be seen that by setting the gap 14, the difference between the maximum value and the minimum value of the temperature on the wafer 200 can be effectively reduced, thereby reducing the temperature difference on the wafer 200, so that the temperature of the wafer 200 is more uniform during the reaction process of the epitaxial device 300, and further conducive to improving the uniformity of the thin film deposited on the wafer 200.

[0041] As Figure 2As shown, as an implementation manner, the tray 13 extends at least partially away from the base plate 12 to form an annular extension 132, and the annular extension 132 can be used to provide support when handling the tray 13. Among them, the ratio range of the height H2 of the annular extension 132 in the up-and-down direction of the wafer carrier 100 to the preset distance D1 is 0.25 to 0.5. Specifically, the ratio range of the height H2 of the annular extension 132 in the up-and-down direction of the wafer carrier 100 to the preset distance D1 is 0.3 to 0.45. More specifically, the ratio range of the height H2 of the annular extension 132 in the up-and-down direction of the wafer carrier 100 to the preset distance D1 is 0.36 to 0.4. With such a setting, it is possible to avoid the annular extension 132 being too thin due to the ratio of the height H2 to the preset distance D1 being too small, so as to avoid the structural strength of the annular extension 132 being too low and reducing the stability when handling the tray 13, so as to avoid the tray 13 falling during handling and causing damage to the wafer carrier 100, which is beneficial to improving the service life of the wafer carrier 100.

[0042] Secondly, it is also possible to avoid the annular extension 132 having too low strength and causing cracking and damage during the heating process, which is beneficial to improving the service life of the tray 13.

[0043] In addition, it is also possible to avoid the ratio of the height H2 to the preset distance D1 being too large, resulting in the height of the annular extension 132 relative to the base 11 being too low, so as to avoid the annular extension 132 interfering with the gap 14 and causing the gap 14 to be too small, thereby avoiding the gap 14 being too small due to the height being too small, and further avoiding too little floating gas between the base 11 and the tray 13, so as to avoid the floating gas between the base 11 and the tray 13 not meeting the temperature reduction requirements of the tray 13, which is beneficial to reducing the temperature difference between the tray 13 and the base plate 12, and then beneficial to improving the uniformity of the thin film deposited on the wafer 200.

[0044] As Figure 4 shown, as an implementation manner, the tray 13 includes a bearing surface 133, and the bearing surface 133 is used to bear the wafer 200 during handling. And, the upper surface of the base plate 12 is used to bear the wafer 200 during reaction. In this implementation manner, the bearing surface 133 is used to bear the edge of the wafer 200, and the upper surface of the base plate 12 is used to bear the part of the wafer 200 other than the edge.

[0045] Specifically, along the vertical direction of the wafer carrier device 100, the height of the bearing surface 133 is lower than the height of the upper surface of the base plate 12. With such a setting, when the wafer 200 is placed on the upper surface of the base plate 12, a gap can be formed between the base plate 12 and the bearing surface 133. Through this gap, a deformation space can be reserved for the deformation of the wafer 200, so as to avoid the deformation of the wafer 200 caused by the lack of reserved deformation space, thereby avoiding the interference between the wafer 200 and the bearing surface 133 and the tilting of the wafer 200, and thus avoiding the waste of the thin film caused by the uneven deposition of the thin film on the tilted wafer 200.

[0046] It should be noted that during the reaction of the epitaxial device 300, the edge of the wafer 200 will expand and deform after being heated. Therefore, by reserving a deformation space, the wafer 200 can be prevented from tilting after deformation, thereby avoiding the waste of the thin film and being beneficial to improving the utilization rate of the thin film.

[0047] As an optional implementation manner, the height difference △H between the bearing surface 133 and the upper surface of the base plate 12 ranges from 0.1 mm to 0.3 mm. Specifically, the height difference △H between the bearing surface 133 and the upper surface of the base plate 12 ranges from 0.12 mm to 0.27 mm. More specifically, the height difference △H between the bearing surface 133 and the upper surface of the base plate 12 ranges from 0.14 mm to 0.2 mm. With such a setting, it can be avoided that the reserved deformation space is too large due to the too large height difference △H, thereby avoiding excessive deformation of the wafer 200 caused by the lack of constraint on the deformation of the wafer 200 in the too large deformation space, so as to avoid the waste of the thin film caused by the uneven deposition of the thin film on the overly deformed wafer 200, and further being beneficial to improving the utilization rate of the thin film. In addition, it can also be avoided that the reserved deformation space is too small due to the too small height difference △H, thereby avoiding the tilting of the wafer 200 after deformation caused by the deformation degree of the wafer 200 being greater than the volume of the deformation space, which is beneficial to improving the utilization rate of the thin film.

[0048] In addition, by setting the height difference △H between the bearing surface 133 and the upper surface of the base plate 12, it can be avoided that the wafer 200 on the base plate 12 is in direct contact with the bearing surface 133, resulting in excessive heat transferred from the bearing surface 133 to the wafer 200, thereby avoiding the warping and damage of the wafer 200 caused by the too high edge temperature of the wafer 200 and improving the service life of the wafer 200.

[0049] As an implementation manner, the abutting portion 134 is provided with at least one first heat insulation groove 1341. Specifically, the opening of the first heat insulation groove 1341 is located on the lower surface of the abutting portion 134. With such a setting, the contact area between the tray 13 and the base plate 12 can be reduced through the first heat insulation groove 1341, and the floating gas can fill the first heat insulation groove 1341, so that the heat conduction performance between the base plate 12 and the base 11 can be reduced. When the tray 13 is subjected to heat conduction from the base 11, it can avoid excessive heat from the base plate 12, resulting in too high a temperature of the tray 13. Furthermore, it is beneficial to reduce the temperature of the tray 13 to improve the temperature uniformity of the wafer 200 during the reaction process.

[0050] As Figure 2 shown, as an implementation manner, the tray 13 is provided with a second heat insulation groove 136, and the opening of the second heat insulation groove 136 is located on the upper surface of the tray 13. The number of the second heat insulation grooves 136 is at least one. With such a setting, the contact area between the tray 13 and the floating gas can be increased through the second heat insulation groove 136 to improve the heat exchange efficiency between the tray 13 and the floating gas, so as to be beneficial to reducing the temperature of the tray 13, further improving the temperature uniformity of the wafer 200 during the reaction process, and then improving the uniformity of the thin film deposited on the wafer 200.

[0051] As an implementation manner, the inner diameter of the annular groove 121 is smaller than the diameter of the wafer 200, so that the edge of the wafer 200 can extend beyond the annular groove 121, which is beneficial to the bearing surface 133 to support the part of the wafer 200 beyond the annular groove 121, and further beneficial to the handling of the wafer 200 by the tray 13.

[0052] Specifically, the distance between the abutting portion 134 and the inner diameter side wall of the annular groove 121 is defined as a preset gap D2, and the difference between the inner diameter of the annular groove 121 and the diameter of the wafer 200 is a preset difference. Among them, along the radial direction of the annular groove 121, the width range of the preset gap D2 is from 1 mm to 2 mm. Specifically, the width range of the preset gap D2 is from 1.3 mm to 1.8 mm. More specifically, the width range of the preset gap D2 is from 1.4 mm to 1.6 mm. With such a setting, it is possible to avoid the excessive preset gap D2 resulting in too large a distance between the abutting portion 134 and the annular groove 121, thereby avoiding the upper end surface of the abutting portion 134 (i.e., the bearing surface 133) being unable to support the edge of the wafer 200, which may cause the wafer 200 to be unable to be picked up and transported, and thus is beneficial to improving the picking convenience of the wafer 200 by the wafer carrier device 100. In addition, it is also possible to avoid the preset gap D2 being too small, resulting in too small a distance between the abutting portion 134 and the annular groove 121, thereby avoiding the excessive heat conduction from the base plate 12 to the tray 13 through the annular groove 121 and the abutting portion 134. When the tray 13 receives the heat conduction from the base 11, it can avoid being affected by too much heat from the base plate 12, resulting in too high a temperature of the tray 13, which is beneficial to improving the temperature uniformity of the wafer 200 during the reaction process, so as to improve the uniformity of the thin film deposited on the wafer 200.

[0053] In this embodiment, the preset gap D2 does not exceed one-fourth of the preset difference. With such a setting, it is possible to avoid the area of the bearing surface 133 that can support the wafer 200 being too small, resulting in the tray 13 being unable to support and lift the wafer 200, which is beneficial to the transportation of the wafer 200 by the tray 13.

[0054] As Figure 2 shown, as an embodiment, at least a part of the tray 13 extends upward to form an annular protrusion 135. An accommodation space 1351 is formed around the annular protrusion 135 for accommodating the wafer 200, so that the tray 13 can transport the wafer 200.

[0055] It should be noted that the annular protrusion 135 and the annular extension 132 are integrally formed structures.

[0056] In this embodiment, the inner circle radius of the annular protrusion 135 is greater than the radius of the wafer 200 to avoid interference between the annular protrusion 135 and the wafer 200, which is conducive to placing the wafer 200 in the accommodation space 1351. Among them, the difference range between the inner circle radius of the annular protrusion 135 and the radius of the wafer 200 is 1 mm to 2 mm. Specifically, the difference range between the inner circle radius of the annular protrusion 135 and the radius of the wafer 200 is 1.2 mm to 1.8 mm. More specifically, the difference range between the inner circle radius of the annular protrusion 135 and the radius of the wafer 200 is 1.4 mm to 1.6 mm. With such a setting, it can be avoided that the difference is too small, resulting in too small a distance between the annular protrusion 135 and the wafer 200, thereby avoiding too high a heat conduction performance from the tray 13 to the wafer 200 through the annular protrusion 135, so as to avoid too high an edge temperature of the wafer 200, which is conducive to reducing the temperature difference between the edge and the center of the wafer 200 and improving the uniformity of the film deposited on the wafer 200.

[0057] In addition, it can be avoided that the difference between the inner circle radius of the annular protrusion 135 and the radius of the wafer 200 is too large, resulting in too large a distance between the annular protrusion 135 and the wafer 200, thereby avoiding too large a space in the accommodation space 1351, which may cause the wafer 200 to be easily offset in the accommodation space 1351, and then avoiding the wafer 200 from being offset, resulting in the bearing surface 133 being unable to support the wafer 200, and further avoiding the tray 13 from being unable to lift the wafer 200, which is conducive to the tray 13 carrying the wafer 200.

[0058] As an embodiment, the height H1 of the surrounding portion 131 in the up and down direction of the wafer carrier 100 is greater than the height H2 of the annular extension portion 132 in the up and down direction of the wafer carrier 100. With such a setting, the structural strength of the surrounding portion 131 can be made greater than that of the annular extension portion 132, so that the anti-deformation ability of the annular extension portion 132 is less than that of the surrounding portion 131. Therefore, when the epitaxial device 300 is working, after the tray 13 is heated, the annular extension portion 132 is more likely to deform than the surrounding portion 131 to offset the overall deformation amount of the tray 13, thereby avoiding the surrounding portion 131 from being deformed by heat and unable to be sleeved on the base plate 12, which is conducive to improving the service life of the tray 13.

[0059] In the present embodiment, the height H1 of the surrounding portion 131 in the vertical direction of the wafer carrier device 100 is greater than the height H3 of the abutting portion 134 in the vertical direction of the wafer carrier device 100. With such a setting, the anti-deformation ability of the abutting portion 134 is less than that of the surrounding portion 131. Therefore, after the tray 13 is heated, the abutting portion 134 is more likely to deform compared to the surrounding portion 131 to offset the overall deformation amount of the tray 13, thereby preventing the surrounding portion 131 from being deformed by heat and unable to be sleeved on the base plate 12, which is beneficial to improving the service life of the tray 13.

[0060] As Figure 5 shown, as an embodiment, the present application further provides an epitaxial device 300, which includes an upper cover 31, a cavity side wall 32, a bottom plate 33, an automation component 34, and a wafer carrier device 100. Among them, the upper cover 31, the cavity side wall 32, and the bottom plate 33 surround to form a reaction chamber 35, and raw material gas can be introduced into the reaction chamber 35 to fabricate a thin film. The wafer carrier device 100 is located in the reaction chamber 35, and the wafer carrier device 100 is used to receive the deposited thin film. The automation component 34 can pick up the tray 13 so that the automation component 34 can transport the wafer 200. Exemplarily, the automation component 34 can be a robotic arm, and the robotic arm clamps and moves the tray 13 so that the wafer 200 placed on the bearing surface 133 can be transported, which is beneficial to the collection of the thin film.

[0061] As an embodiment, the epitaxial device 300 includes a heating component 36, which is located in the reaction chamber 35. The heating component 36 is used to heat and maintain the temperature of the reaction environment in the epitaxial device 300, and the heating component 36 can control the temperature in the reaction environment so that the temperature of the reaction environment can adapt to the reaction temperature of the raw material gas. And, in the present embodiment, in the vertical direction of the wafer carrier device 100, the heating component 36 is located below the base 11 so that the heating component 36 can heat the base 11 and conduct heat to the base plate 12 and the tray 13 through the base 11.

[0062] As an embodiment, cooling channels (not shown in the figure) are provided inside the upper cover 31, the cavity side wall 32, and the bottom plate 33, and cooling water is passed through the cooling channels. The cooling water can exchange heat with the reaction chamber 35 to prevent the temperature in the reaction chamber 35 from being too high and causing the raw material gas to not react, which is beneficial to improving the utilization rate of the raw material gas.

[0063] As an implementation manner, the base 11 is provided with an air passage rotating shaft 111, and the air passage rotating shaft 111 is rotatably connected to the bottom plate 33. Specifically, an air inlet passage 1111 is provided inside the air passage rotating shaft 111. The air inlet passage 1111 includes an air inlet 1112 and an air outlet 1113. The air inlet 1112 communicates with the outside of the reaction chamber 35, so that the floating gas enters the air inlet passage 1111 through the air inlet 1112 and drives the air passage rotating shaft 111 to rotate, thereby driving the base 11 to rotate. The air outlet 1113 is provided on the upper surface of the base 11, so that the floating gas is discharged from the air outlet 1113 and fills the air flow gap 15. At the same time, the floating gas enables the base plate 12 and the tray 13 to be aerostatically levitated on the upper surface of the base 11.

[0064] It should be understood that for those of ordinary skill in the art, improvements or changes can be made according to the above description, and all such improvements and changes should fall within the protection scope of the appended claims of this application.

Claims

1. A wafer carrier device (100), characterized in that, Comprising: A base (11); A base plate (12), which is supported by the base (11) and can rotate relative to the base (11); A tray (13), which is supported by the base plate (12) and is disposed at least partially around the base plate (12); The base plate (12) is formed with an annular groove (121), the annular groove (121) communicates with the upper surface of the base plate (12), and the annular groove (121) communicates with the side surface of the base plate (12). The tray (13) is at least partially located in the annular groove (121) and is supported by the annular groove (121). The distance between the groove bottom surface of the annular groove (121) and the lower surface of the base plate (12) in the up and down direction of the wafer carrying device (100) is a preset distance; At least a part of the tray (13) extends downward to form a surrounding portion (131). The upper end of the surrounding portion (131) is flush with the groove bottom surface of the annular groove (121). The surrounding portion (131) is disposed around the base plate (12). The ratio range of the height H1 of the surrounding portion (131) in the up and down direction of the wafer carrying device (100) to the preset distance D1 is from 0.25 to 0.

5.

2. The wafer carrying device (100) according to claim 1, wherein At least a part of the tray (13) extends away from the base plate (12) to form an annular extension portion (132). The ratio range of the height H2 of the annular extension portion (132) in the up and down direction of the wafer carrying device (100) to the preset distance D1 is from 0.2 to 0.

5.

3. The wafer carrying device (100) according to claim 1, wherein The tray (13) has a carrying surface (133) for carrying a wafer, and the height of the carrying surface (133) is lower than the height of the upper surface of the base plate (12).

4. The wafer carrying device (100) according to claim 3, wherein The height difference △H between the carrying surface (133) and the upper surface of the base plate (12) ranges from 0.1 mm to 0.3 mm.

5. The wafer carrying device (100) according to any one of claims 1 to 4, wherein The tray (13) includes an abutting portion (134) located in the annular groove (121). The lower surface of the abutting portion (134) contacts the groove bottom surface of the annular groove (121). At least one first heat insulation groove (1341) is formed in the abutting portion (134), and the opening of the first heat insulation groove (1341) is located on the lower surface of the abutting portion (134).

6. The wafer carrying device (100) according to claim 5, wherein The tray (13) is formed with a second heat insulation groove, and the opening of the second heat insulation groove is located on the upper surface of the tray (13).

7. The wafer carrying device (100) according to claim 5, wherein The distance between the abutting portion (134) and the inner diameter side wall of the annular groove (121) is a preset gap D2. The inner diameter of the annular groove (121) is smaller than the diameter of the wafer. The difference between the inner diameter of the annular groove (121) and the diameter of the wafer is defined as a preset difference. The preset gap D2 does not exceed one-fourth of the preset difference.

8. The wafer carrier device (100) according to any one of claims 1 to 4, characterized in that At least part of the tray (13) extends upward to form an annular protrusion (135). An accommodation space for accommodating the wafer is formed by surrounding the annular protrusion (135). The inner circle radius of the annular protrusion (135) is greater than the radius of the wafer, and the difference range between the inner circle radius of the annular protrusion (135) and the radius of the wafer is 1 mm to 2 mm.

9. The wafer carrier device (100) according to claim 2, characterized in that The height H1 of the surrounding portion (131) in the up and down direction of the wafer carrier device (100) is greater than the height H2 of the annular extension portion (132) in the up and down direction of the wafer carrier device (100); The tray (13) includes an abutting portion (134) located in the annular groove (121). The height H1 of the surrounding portion (131) in the up and down direction of the wafer carrier device (100) is greater than the height H3 of the abutting portion (134) in the up and down direction of the wafer carrier device (100).

10. An epitaxial device (300), characterized in that, Comprising: A reaction chamber and the wafer carrier device (100) according to any one of claims 1 to 9 disposed inside the reaction chamber.

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