Chemically amplified positive photoresist, array process and OLED

Abstract

The invention relates to the technical field of OLED (Organic Light Emitting Diode) photoetching, in particular to a chemical amplification type positive photoresist, an array process and an OLED. Resin in the chemical amplification type positive photoresist is composed of PHS resin and phenolic resin, and each 100 parts of the chemical amplification type positive photoresist comprises 10-35 parts of the PHS resin and 3-20 parts of the phenolic resin. The photoresist not only has the characteristic of high resolution, but also improves the sensitivity of the photoresist under the condition of ensuring the residual film rate.

Description

Technical Field

[0001] The present invention relates to the field of OLED lithography technology, and more specifically, to chemically amplified positive photoresists, array processes, and OLEDs. Background Art

[0002] In modern high-tech industries, OLED photoresists play a crucial role. As a key element in the lithography process, a photoresist is a special photosensitive hybrid material containing four main components: a photosensitizer, a film-forming resin, a solvent, and additives. It is essentially a pattern transfer medium that utilizes photochemical reactions. Through a series of complex processes such as exposure, development, and etching, it can accurately transfer the fine patterns on the mask plate to the substrate to be processed, forming an etch-resistant thin film material, and its solubility changes accordingly during the exposure process.

[0003] Although photoresists only account for 3 - 5% of the material cost in semiconductor manufacturing processes, their influence in the entire semiconductor manufacturing field cannot be underestimated. The quality and performance of photoresists are the core points that determine the performance, product yield, and reliability of integrated circuits. They are representative key core materials in the development level of the semiconductor industry and have irreplaceable indicator functions. In recent years, the panel industry has been in the wave of rapid development, and thus more stringent requirements have been put forward for OLED photoresists. (1) From the perspective of resolution, the resolution of OLED photoresists has been continuously improved from the early 5 μm, through 3 μm, to the current common 1.5 - 2 μm, and this development trend continues. Few existing photoresists can achieve a resolution of 1.2 μm and below. (2) The requirements for the sensitivity (exposure energy) of photoresists have also increased significantly. Since sensitivity is jointly determined by the illuminance of the photoresist and the exposure time (sensitivity = photoresist illuminance × exposure time), it has become crucial to shorten the exposure time to reduce the exposure energy while ensuring stable illuminance. However, based on the existing photoresists to improve sensitivity, it is often difficult to maintain the residual film rate within a good range, that is, it is impossible to balance both the residual film rate and sensitivity at the same time. Based on the above situation, a new photoresist is needed.

[0004] In view of this, the present invention is specifically proposed. Summary of the Invention

[0005] The purpose of the present invention is to provide chemically amplified positive photoresists, array processes, and OLEDs. An embodiment of the present invention provides a new photoresist, which not only has the characteristic of high resolution, but also improves the sensitivity of the photoresist while ensuring the residual film rate.

[0006] The present invention is implemented as follows:

[0007] In a first aspect, the present invention provides a chemically amplified positive photoresist. The resin in the chemically amplified positive photoresist is composed of a PHS resin and a phenolic resin. Based on every 100 parts of the chemically amplified positive photoresist, it includes 10 - 35 parts of the PHS resin and 3 - 20 parts of the phenolic resin.

[0008] In an alternative embodiment, the weight-average molecular weight Mw of the PHS resin ranges between 3000 and 25000;

[0009] Preferably, the PDI of the PHS resin is between 1.2 and 2.5;

[0010] Preferably, the monomers forming the PHS resin include at least one of styrene monomers, carboxylic acid ester monomers, acrylate monomers, maleic anhydride monomers, and pyridylvinyl monomers.

[0011] In an alternative embodiment, the phenolic resin is selected from the polymers represented by the following structural formulas:

[0012] Wherein, R and R" are each independently selected from any one of C1 - C5 alkyl, hydrogen, and hydroxyl, and x and y are each independently integers from 50 to 1000.

[0013] In an alternative embodiment, it further includes a photosensitizer;

[0014] Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 0.5 - 20 parts of the photosensitizer;

[0015] Preferably, the photosensitizer includes a diazonaphthoquinone photosensitizer and / or a diazonaphthoquinone photosensitizer.

[0016] In an alternative embodiment, it further includes a tackifier, preferably a silazane compound, more preferably hexamethyldisilazane;

[0017] Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 300 - 1000 ppm of the tackifier.

[0018] In an alternative embodiment, it further includes a sensitizer, preferably a diazonaphthoquinone ester compound; preferably any one of 2,3,4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 2,3,4,4"-tetrahydroxybenzophenone diazonaphthoquinone sulfonate, and 2-hydroxyphenyl-2-trihydroxyphenylpropane diazonaphthoquinone ester;

[0019] Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 200 - 1000 ppm of the sensitizer.

[0020] In an alternative embodiment, it further includes a leveling agent, preferably a siloxane compound, more preferably a modified silicone polydimethylsiloxane and / or a silicone mixture;

[0021] Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 200 - 2000 ppm of the leveling agent.

[0022] In an alternative embodiment, it further includes a solvent;

[0023] Preferably, the solvent includes at least one of an alcohol solvent, an ester solvent, an ether solvent, and a ketone solvent;

[0024] Preferably, based on every 100 parts of the chemically amplified positive photoresist, the balance is the solvent.

[0025] In a second aspect, the present invention provides an array process, including: etching using the chemically amplified positive photoresist described in the foregoing embodiments.

[0026] In a third aspect, the present invention provides an OLED, which is prepared by the array process described in the foregoing embodiments.

[0027] The present invention has the following beneficial effects: The resin in the photoresist provided by the embodiments of the present invention adopts a PHS resin and a phenolic resin, which can enable the photoresist to not only have the characteristic of high resolution, but also improve the sensitivity of the photoresist while ensuring the residual film rate, that is, it can balance the residual film rate and the sensitivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and thus should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0029] Figure 1 It is a topographical diagram of the chemically amplified positive photoresist provided by Embodiment 1 of the present invention at a resolution of 1.0 μm;

[0030] Figure 2 It is a topographical diagram of the chemically amplified positive photoresist provided by Embodiment 2 of the present invention at resolutions of 1.2 μm and 1.0 μm;

[0031] Figure 3 It is a topographical diagram of the chemically amplified positive photoresist provided by Embodiment 3 of the present invention at a resolution of 1.0 μm;

[0032] Figure 4Morphology diagrams of the photoresist provided in Comparative Example 1 of the present invention at resolutions of 2.0 μm and 1.5 μm;

[0033] Figure 5 Morphology diagrams of the photoresist provided in Comparative Example 2 of the present invention at resolutions of 2.0 μm and 1.5 μm. Detailed implementation manners

[0034] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. For those not specified in the embodiments, the conventional conditions or the conditions recommended by the manufacturer are followed. For the reagents or instruments not specified by the manufacturer, they are all conventional products that can be obtained through commercial purchase.

[0035] Existing positive photoresists often use phenolic resin as the resin system. With the continuous improvement of the application resolution of the photoresist formed by this system in OLED panel factories, in the case of improving the sensitivity of the traditional phenolic resin system, it is often difficult to keep the residual film rate within a good range.

[0036] However, the embodiments of the present invention provide a new chemically amplified positive photoresist, which combines PHS resin and phenolic resin to form a new resin system, and then can achieve high resolution and improve the sensitivity of the photoresist while ensuring the residual film rate.

[0037] Specifically, based on every 100 parts of the chemically amplified positive photoresist, it includes 10 - 35 parts of PHS resin and 3 - 20 parts of phenolic resin.

[0038] For example, the dosage of PHS resin is any value between 10 - 35 parts such as 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, and 35 parts.

[0039] The weight average molecular weight Mw of the PHS resin ranges between 3000 - 25000; the PDI of the HS resin is between 1.2 - 2.5; the monomers forming the PHS resin include at least one of styrene monomers, carboxylic acid ester monomers, acrylate monomers, maleic anhydride monomers, and pyridine vinyl monomers. For example, the structural formula of the polymer that may exist in the PHS resin is as follows:

[0040]

[0041] The PHS resin can be a self-made resin or a PHS resin of the prior art purchased directly.

[0042] The dosage of phenolic resin is any value between 3 - 20 parts such as 3 parts, 5 parts, 10 parts, 15 parts, and 20 parts.

[0043] The phenolic resin is selected from polymers represented by the following structural formulas:

[0044] Wherein, R and R" are each independently selected from any one of C1-C5 alkyl groups, hydrogen, and hydroxyl groups. For example, R and R" are each independently selected from any one of alkyl groups such as methyl, ethyl, propyl, etc., hydrogen, and hydroxyl groups. x and y are each independently integers from 50 to 1000.

[0045] Similarly, the phenolic resin can be a self-made resin or a phenolic resin of the prior art purchased directly.

[0046] Specifically, in the PHS resin molecule chain of the embodiment of the present invention, there is a high degree of regularity, and benzene rings and vinyl groups are arranged alternately. This structure not only helps to improve the resolution but also lays a foundation for the combination with the phenolic resin. The changes in the R and R' groups and the x and y values of the phenolic resin make its chemical properties and spatial structure more flexible and diverse. When the PHS resin is mixed with the phenolic resin, various interactions can form between the two molecules. On the one hand, the hydroxyl groups in the PHS resin can be attracted to some groups (such as methyl, ethyl, etc.) on the phenolic resin through van der Waals forces, enhancing the intermolecular binding force and enabling the photoresist to form a more compact and uniform network structure during the film-forming process, thereby improving the film thickness uniformity. On the other hand, during the photochemical reaction process, the hydroxyl groups on the PHS resin serve as active sites and undergo chemical reactions under the action of a photoacid generator, causing a change in its own solubility. At this time, the presence of the modified phenolic resin can play a certain buffering and regulating role. It can stabilize the overall chemical structure of the photoresist without affecting the photochemical reaction of the PHS resin, preventing excessive dissolution or uneven dissolution during the exposure and development processes, and thus ensuring a good residual film rate.

[0047] Furthermore, the chemically amplified positive photoresist further includes a photosensitizer, including a diazonaphthoquinone photosensitizer and / or a diazonaphthoquinone photosensitizer. For example, it includes but is not limited to 2,1,4-type diazonaphthoquinone photosensitizers and / or 2,1,5-type diazonaphthoquinone photosensitizers, and their optional structures are as follows: Formula 1, Formula 2, wherein R in Formula 1 or Formula 2 represents hydrogen or the following Formula 3, Formula 3, and the sulfonic acid group (SO3R) in Formula 3 is connected thereto.

[0048] Based on every 100 parts of the chemically amplified positive photoresist, it includes 0.5-20 parts of the photosensitizer; for example, any value between 0.5-20 parts such as 0.5 parts, 1 part, 5 parts, 10 parts, 15 parts, and 20 parts.

[0049] Furthermore, the chemically amplified positive photoresist further comprises a tackifier, preferably a silazane compound, such as, including but not limited to, hexamethyldisilazane. Calculated based on every 100 parts of the chemically amplified positive photoresist, it comprises 300 - 1000 ppm; for example, any value between 300 - 1000 such as 300 ppm, 500 ppm, 800 ppm, and 1000 ppm.

[0050] Furthermore, the chemically amplified positive photoresist further comprises a sensitizer, preferably a diazonaphthoquinone ester compound. For example, including but not limited to any one of 2,3,4 - trihydroxybenzophenone diazonaphthoquinone sulfonate, 2,3,4,4" - tetrahydroxybenzophenone diazonaphthoquinone sulfonate, and 2 - hydroxyphenyl - 2 - trihydroxyphenylpropane diazonaphthoquinone ester.

[0051] Furthermore, calculated based on every 100 parts of the chemically amplified positive photoresist, it comprises 200 - 1000 ppm. For example, any value between 200 - 1000 such as 200 ppm, 500 ppm, 700 ppm, and 1000 ppm.

[0052] Furthermore, the chemically amplified positive photoresist further comprises a leveling agent, preferably a silicone compound, such as, including but not limited to, modified polysiloxane dimethylsiloxane and / or silicone mixture.

[0053] Calculated based on every 100 parts of the chemically amplified positive photoresist, it comprises 200 - 2000 ppm of the leveling agent, for example, any value between 200 - 2000 such as 200 ppm, 500 ppm, 1000 ppm, 1500 ppm, and 2000 ppm.

[0054] Further, the chemically amplified positive photoresist further includes a solvent, and the solvent includes at least one of an alcohol solvent, an ester solvent, an ether solvent, and a ketone solvent. For example, it includes but is not limited to propylene glycol monomethyl ether acetate, cyclohexanone, γ-butyrolactone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, methanol, ethanol, isopropanol, n-propanol, n-butanol, isobutanol, sec-butanol, tert-butanol, pentanol, hexanol, heptanol, octanol, nonanol, decanol, benzyl alcohol, ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, sec-butyl acetate, tert-butyl acetate, methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, dimethyl carbonate, diethyl carbonate, ethylene carbonate, propylene carbonate, N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone, or one or more of them. Based on every 100 parts of the chemically amplified positive photoresist, the balance is the solvent.

[0055] In a second aspect, the present invention provides an array process, including: etching by using the chemically amplified positive photoresist described in the foregoing embodiments.

[0056] In a third aspect, the present invention provides an OLED, which is prepared by the array process described in the foregoing embodiments.

[0057] The features and properties of the present invention are further described in detail below in conjunction with embodiments.

[0058] Example 1

[0059] The embodiment of the present invention provides a chemically amplified positive photoresist, and its components are as follows:

[0060] 15 parts of a PHS resin with a weight average molecular weight Mw of 12,000 and a PDI of 1.6, 5 parts of a phenolic resin modifier with R being methyl, x = 150, and y = 200, 2 parts of 2,3,4,4'-tetrahydroxybenzophenone 1,2-diazidonaphthoquinone-5-sulfonate, 300 ppm of 2,3,4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 400 ppm of hexamethyldisilazane, 300 ppm of a modified silicone polydimethylsiloxane, and the balance being propylene glycol monomethyl ether acetate.

[0061] Among them, the PHS resin is purchased from MIWON Co., Ltd. The phenolic resin modifier is purchased from Shandong Shengquan Group, the 2,1,4-type diazonaphthoquinone photosensitizer is purchased from MIWON Co., Ltd., and the modified silicone polydimethylsiloxane is purchased from BYK-Chemie.

[0062] This embodiment provides a method for preparing the above chemically amplified positive photoresist, including:

[0063] Mix the above raw materials and stir evenly at room temperature, and then filter through a 0.2 μm filter to obtain a photoresist solution.

[0064] This embodiment provides a photolithography step for the above chemically amplified positive photoresist:

[0065] Fix the cleaned silicon wafer substrate on a spin coater, spin coat the above photoresist solution at a speed of 3000 rpm for 30 s to form a photoresist film with a thickness of about 1.2 μm on the silicon wafer surface. Place the spin-coated silicon wafer on a hot plate at 100 °C for soft baking for 60 s to volatilize part of the solvent in the photoresist and enhance the adhesion between the photoresist and the substrate. Use an MPA600 exposure machine (mixed light source) for exposure. After exposure, place the silicon wafer in an environment at 110 °C for post-baking for 60 s to promote the chemical reaction inside the photoresist. Develop with a 0.26 N aqueous solution of tetramethylammonium hydroxide for 60 s, then rinse with deionized water for 30 s, and finally dry in a nitrogen atmosphere to obtain a photolithography pattern.

[0066] Example 2

[0067] An embodiment of the present invention provides a chemically amplified positive photoresist, and its components are as follows:

[0068] 20 parts of PHS resin with a weight average molecular weight Mw of 18000 and PDI of 2.0, 8 parts of a phenolic resin modifier with R being ethyl, x = 250, and y = 350, 3 parts of 1,1'-bis(4-alkoxyphenyl)-2,2',2”-tritert-butyl-1,1'-biphenyl-4,4'-diol 1,2-diazidonaphthoquinone-5-sulfonate, 400 ppm of 2,3,4,4'-tetrahydroxybenzophenone diazonaphthoquinone sulfonate, 500 ppm of hexamethyldisilazane, 400 ppm of modified silicone polydimethylsiloxane, and the balance is propylene glycol monomethyl ether acetate.

[0069] This embodiment provides a method for preparing the above chemically amplified positive photoresist, including:

[0070] Fix the cleaned silicon wafer substrate on a spin coater, spin coat the above photoresist solution at a speed of 3000 rpm for 30 s to form a photoresist film with a thickness of about 1.2 μm on the surface of the silicon wafer. Place the spin-coated silicon wafer on a hot plate at 100 °C for soft baking for 60 s to volatilize part of the solvent in the photoresist and enhance the adhesion between the photoresist and the substrate. Use an MPA600 exposure machine (mixed light source) for exposure. After exposure, place the silicon wafer in an environment at 110 °C for post-baking for 60 s to promote the chemical reaction inside the photoresist. Develop with a 0.26 N aqueous solution of tetramethylammonium hydroxide for 60 s, then rinse with deionized water for 30 s, and finally dry under a nitrogen atmosphere to obtain a photolithography pattern.

[0071] Example 3

[0072] An embodiment of the present invention provides a chemically amplified positive photoresist, and its components are as follows:

[0073] 25 parts of a PHS resin with a weight average molecular weight Mw of 22000 and a PDI of 2.3, 12 parts of a novolak resin modifier with R being hydrogen, x = 350, and y = 450, 5 parts of a photosensitizer containing both 2,1,4-type and 2,1,5-type diazonaphthoquinone photosensitizers 2,3,4,4'-tetrahydroxybenzophenone 1,2-diazidonaphthoquinone-5-sulfonate and 1,1'-bis(4-alkoxyphenyl)-2,2',2”-tritert-butyl-1,1'-biphenyl-4,4'-diol 1,2-diazidonaphthoquinone-5-sulfonate (the ratio of the two is 1:1), 500 ppm of 2-hydroxyphenyl-2-tris(hydroxyphenyl)propane diazonaphthoquinone ester, 600 ppm of hexamethyldisilazane, 500 ppm of modified silicone polydimethylsiloxane, and the remaining amount is a solvent, and the solvent is ethylene glycol monoethyl ether and dimethyl carbonate, and the volume ratio of the two is 3:1.

[0074] This embodiment provides a preparation method of the above chemically amplified positive photoresist, including:

[0075] Mix the above raw materials and stir evenly at room temperature, and then filter through a 0.2 μm filter to obtain a photoresist solution.

[0076] This embodiment provides the lithography steps of the above chemically amplified positive photoresist: Fix the cleaned silicon wafer substrate on a spin coater, spin coat the above photoresist solution at a speed of 3000 rpm for 30 s to form a photoresist film with a thickness of about 1.2 μm on the surface of the silicon wafer. Place the wafer after coating on a hot plate at 100 °C for soft baking for 60 s to volatilize part of the solvent in the photoresist and enhance the adhesion between the photoresist and the substrate. Use an MPA600 exposure machine (mixed light source) for exposure. After exposure, place the wafer in an environment at 110 °C for post-baking for 60 s to promote the chemical reaction inside the photoresist. Develop with a 0.26 N aqueous solution of tetramethylammonium hydroxide for 60 s, then rinse with deionized water for 30 s, and finally dry in a nitrogen atmosphere to obtain a lithography pattern.

[0077] Comparative Example 1

[0078] This comparative example provides a photoresist, and its components are as follows:

[0079] 20 parts of phenolic resin (this phenolic resin is the phenolic resin of Example 1), 2 parts of 2,3,4,4'-tetrahydroxybenzophenone 1,2-diazidonaphthoquinone-5-sulfonate, 300 ppm of 2,3,4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 400 ppm of hexamethyldisilazane, 300 ppm of modified silicone polydimethylsiloxane, and the remaining amount is propylene glycol methyl ether acetate.

[0080] Use this photoresist for lithography, and the specific method is the same as that of Example 1.

[0081] Comparative Example 2

[0082] This comparative example provides a photoresist, and its components are as follows:

[0083] 20 parts of PHS resin (this PHS resin is the PHS resin of Example 1), 2 parts of 2,3,4,4'-tetrahydroxybenzophenone 1,2-diazidonaphthoquinone-5-sulfonate, 300 ppm of 2,3,4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 400 ppm of hexamethyldisilazane, 300 ppm of modified silicone polydimethylsiloxane, and the remaining amount is propylene glycol methyl ether acetate.

[0084] Use this photoresist for lithography, and the specific method is the same as that of Example 1.

[0085] Performance Test 1

[0086] Use a scanning electron microscope (SEM) to observe the photoresist patterns of Examples 1-3 and Comparative Examples 1-2 after development.

[0087] The results are shown in Figures 1 to 5According to the above detection result graph, it can be seen that the photoresist provided by the embodiment of the present invention has a good morphology and good resolution at 1.0 μm - 1.2 μm. If the formula provided by the embodiment of the present invention is changed, the resolution is insufficient at 1.5 μm.

[0088] Performance Test 2

[0089] Perform performance tests on the photoresists of Examples 1 - 3 and Comparative Examples 1 - 2. The results are shown in the following table.

[0090]

[0091] According to the above table, it can be known from the above results that the resolution and sensitivity of Examples 1 - 3 are generally better. At the same time, the heat resistance of Comparative Examples 1 - 2 is poor, and phenomena such as discoloration or cracking occur after heating.

[0092] When the PHS resin is mixed with the modified phenolic resin, various interactions can form between their molecules. On the one hand, the hydroxyl groups in the PHS resin can be attracted to some groups (such as methyl, ethyl, etc.) on the modified phenolic resin through van der Waals forces, enhancing the intermolecular binding force, making the photoresist form a more compact and uniform network structure during the film-forming process, thereby improving the film thickness uniformity. On the other hand, during the photochemical reaction process, the hydroxyl groups on the PHS resin act as active sites and undergo chemical reactions under the action of the photoacid generator, causing changes in its own solubility. At this time, the presence of the modified phenolic resin can play a certain buffering and regulating role. It can stabilize the overall chemical structure of the photoresist without affecting the photochemical reaction of the PHS resin, preventing excessive dissolution or uneven dissolution during the exposure and development processes, and thus ensuring a good residual film rate.

[0093] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A chemically amplified positive photoresist, characterized in that, The resin in the chemically amplified positive photoresist consists of PHS resin and phenolic resin. Based on every 100 parts of the chemically amplified positive photoresist, it includes 10 - 35 parts of PHS resin and 3 - 20 parts of phenolic resin.

2. The chemically amplified positive photoresist according to claim 1, wherein The weight-average molecular weight Mw of the PHS resin ranges between 3000 and 25000; Preferably, the PDI of the PHS resin is between 1.2 and 2.5; Preferably, the monomers forming the PHS resin include at least one of styrene monomers, carboxylic acid ester monomers, acrylate monomers, maleic anhydride monomers, and pyridyl vinyl monomers.

3. The chemically amplified positive photoresist according to claim 1, characterized in that, The phenolic resin is selected from the polymers represented by the following structural formulas: Wherein, R and R' are each independently selected from any one of C1-C5 alkyl, hydrogen, and hydroxyl, and x and y are each independently integers from 50 to 1000.

4. The chemically amplified positive photoresist according to claim 1, characterized in that, It also includes a photosensitizer, Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 0.5 - 20 parts of the photosensitizer; Preferably, the photosensitizer includes a diazonaphthoquinone photosensitizer and / or a diazonaphthoquinone photosensitizer.

5. The chemically amplified positive photoresist according to claim 1, wherein It also includes a tackifier, preferably a silazane compound, more preferably hexamethyldisilazane; Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 300 - 1000 ppm of the tackifier.

6. The chemically amplified positive photoresist according to claim 1, wherein It also includes a sensitizer, preferably a diazonaphthoquinone ester compound; preferably any one of 2,3,4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 2,3,4,4'-tetrahydroxybenzophenone diazonaphthoquinone sulfonate, and 2-hydroxyphenyl-2-trihydroxyphenylpropane diazonaphthoquinone ester; Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 200 - 1000 ppm of the sensitizer.

7. The chemically amplified positive photoresist according to claim 1, wherein It also includes a leveling agent, preferably a siloxane compound, more preferably modified silicone polydimethylsiloxane and / or silicone mixture; Preferably, based on every 100 parts of the chemically amplified positive photoresist, it includes 200 - 2000 ppm of the leveling agent.

8. The chemically amplified positive photoresist according to claim 1, wherein It also includes a solvent; Preferably, the solvent includes at least one of alcohol solvents, ester solvents, ether solvents, and ketone solvents; Preferably, based on every 100 parts of the chemically amplified positive photoresist, the balance is the solvent.

9. An array process, characterized in that, Including: Etching is carried out using the chemically amplified positive photoresist according to claim 1.

10. An OLED, characterized in that, It is prepared by the array process according to claim 9.

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