Packaging structure and packaging method of multi-wavelength VCSEL chip and laser emitting device
Through the packaging structure of a multi-wavelength VCSEL chip, the optical encapsulation layer with high light transmittance is connected to the lead frame to optimize the beam propagation path, solving the problem of high beam loss in the existing technology, and achieving high-efficiency optical output and miniaturized packaging, which is suitable for multi-spectral imaging and hybrid optical signal systems.
Patent Information
- Application Number
- CN202510490857.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-17
- Publication Date
- 2025-07-04
AI Technical Summary
In the existing multi-wavelength VCSEL chip packaging scheme, the lens array or uniform light sheet is prone to cause laser beam scattering, increasing losses, reducing optical output efficiency, and difficult to meet the needs of multi-spectral imaging or hybrid optical signal systems.
The packaging structure of multiple VCSEL chips, substrates, lead frames and high-transmittance optical encapsulation and filling layers is adopted. The surface of the VCSEL chip is covered by the optical encapsulation and filling layer, and the beam propagation path is optimized, and connected to the external control circuit through the lead frame. The substrate size and height of the encapsulation and filling layer are controlled in a miniaturized design.
Effectively reduce laser beam loss, improve optical output efficiency, and realize miniaturized packaging, suitable for high-integration application scenarios.
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Figure CN120262155A_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present application relate to the field of optoelectronic semiconductor technology, and in particular, to a packaging structure, a packaging method, and a laser emitting device for a multi-wavelength VCSEL chip. Background Art
[0002] A vertical-cavity surface-emitting laser (VCSEL) is a semiconductor laser with a unique vertical emission structure. With its excellent beam quality, low power consumption, and easy integration characteristics, it has been widely used in the fields of optical communication, intelligent identification, lidar, and medical equipment.
[0003] Currently, existing VCSEL packaging solutions often package a laser emitting element formed by a single-wavelength VCSEL chip. However, in scenarios where multi-wavelength collaborative work is required, such as multi-spectral imaging or hybrid optical signal systems, a single-wavelength laser emitting element is difficult to meet the requirements. Therefore, existing VCSEL packaging solutions usually integrate multiple VCSEL chips with different wavelengths through packaging to obtain a laser emitting element with multiple wavelengths.
[0004] When existing multiple VCSEL chips with different wavelengths are packaged, a lens array or a light homogenizing sheet is often used to transmit the laser beam; however, the lens array or the light homogenizing sheet is prone to scattering the laser beam, which easily leads to an increase in laser beam loss and a decrease in optical output efficiency. Summary of the Invention
[0005] Embodiments of the present application provide a packaging structure, a packaging method, and a laser emitting device for a multi-wavelength VCSEL chip, which can effectively reduce laser beam loss and improve optical output efficiency.
[0006] Embodiments of the present application provide a packaging structure for a multi-wavelength VCSEL chip, including: multiple VCSEL chips with different wavelengths, a substrate, a lead frame, and an optical encapsulation glue layer;
[0007] The multiple VCSEL chips are fixed on the first side of the substrate;
[0008] The lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, and the pads of the multiple VCSEL chips are electrically connected to the pads of the lead frame; the pins of the lead frame are arranged on the second side of the substrate relative to the first side, and the pins of the lead frame are connected to an external control circuit;
[0009] The optical encapsulating glue layer covers the surfaces of multiple VCSEL chips on the first side of the substrate, and the light transmittance of the optical encapsulating glue layer is greater than a preset light transmittance threshold.
[0010] Furthermore, the size of the substrate is smaller than a preset size threshold; the height of the optical encapsulating glue layer is smaller than a preset height threshold.
[0011] Furthermore, the substrate is a gold-plated BT board with a gold-plated surface.
[0012] Furthermore, it further includes: multiple Zener diodes;
[0013] Multiple Zener diodes are fixed on the first side of the substrate;
[0014] Each VCSEL chip is correspondingly connected to one Zener diode.
[0015] Furthermore, multiple VCSEL chips and multiple Zener diodes are fixed on the first side of the substrate through high thermal conductivity silver glue.
[0016] Furthermore, the pads of multiple VCSEL chips are connected to the pads of different lead frames through wire bonding with gold wires.
[0017] The embodiment of the present application also provides a packaging method for a multi-wavelength VCSEL chip, including:
[0018] Fixing multiple VCSEL chips with different wavelengths on the first side of the substrate;
[0019] Electrically connecting the pads of multiple VCSEL chips to the pads of the lead frame; wherein, the lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, the pins of the lead frame are arranged on the second side of the substrate relative to the first side, and the pins of the lead frame are connected to an external control circuit;
[0020] Covering the surfaces of multiple VCSEL chips on the first side of the substrate with an optical encapsulating glue layer to obtain a packaging structure of a multi-wavelength VCSEL chip, and the light transmittance of the optical encapsulating glue layer is greater than a preset light transmittance threshold.
[0021] Furthermore, the covering the surfaces of multiple VCSEL chips on the first side of the substrate with an optical encapsulating glue layer includes:
[0022] Filling and curing optical encapsulating glue on the surfaces of multiple VCSEL chips on the first side of the substrate to form the optical encapsulating glue layer.
[0023] Furthermore, the method further includes:
[0024] After the optical potting glue is cured, the packaging structure is divided based on the preset specifications of the laser emitting elements to obtain a plurality of laser emitting elements.
[0025] An embodiment of the present application further provides a laser emitting device, including the packaging structure of the multi-wavelength VCSEL chip according to any one of claims 1 to 6 above.
[0026] It can be seen from the above technical solutions that the embodiments of the present application have the following advantages:
[0027] In the embodiment of the present application, the packaging structure of the multi-wavelength VCSEL chip includes: a plurality of VCSEL chips with different wavelengths, a substrate, a lead frame, and an optical potting glue layer; the plurality of VCSEL chips are fixed on the first side of the substrate; the lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, and the pads of the plurality of VCSEL chips are electrically connected to the pads of the lead frame; the pins of the lead frame are arranged on the second side of the substrate relative to the first side, and the pins of the lead frame are connected to an external control circuit; the optical potting glue layer covers the surfaces of the plurality of VCSEL chips on the first side of the substrate, and the light transmittance of the optical potting glue layer is greater than a preset light transmittance threshold.
[0028] It can be seen that in the embodiment of the present application, after a plurality of VCSEL chips with different wavelengths are fixed on the substrate and electrically connected to the lead frame, the surfaces of the plurality of VCSEL chips on the first side of the substrate are covered by the optical potting glue layer, the laser beams of the VCSEL chips are transmitted through the optical potting glue layer, and the light transmittance of the optical potting glue layer is greater than the preset light transmittance threshold. By optimizing the light beam propagation path through the optical potting glue layer, the loss of the laser beam can be effectively reduced, and the optical output efficiency can be improved. Description of the Drawings
[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments recorded in the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings.
[0030] Figure 1 A side view of a packaging structure disclosed in an embodiment of the present application;
[0031] Figure 2 A side view of another packaging structure disclosed in an embodiment of the present application;
[0032] Figure 3 A top view of a packaging structure disclosed in an embodiment of the present application;
[0033] Figure 4A packaging flow chart disclosed in an embodiment of the present application;
[0034] Figure 5 A schematic diagram of a packaging device disclosed in an embodiment of the present application. Detailed implementation manners
[0035] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
[0036] In the description of the embodiments of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the embodiments of the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the embodiments of the present application.
[0037] In the description of the embodiments of the present application, it should be noted that unless otherwise clearly defined and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific situations.
[0038] The Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor laser with a unique vertical emission structure. Compared with traditional edge-emitting lasers, VCSELs have a smaller beam divergence angle and can directly generate a circularly symmetric light spot, thus reducing the complexity of the optical system. In addition, the low threshold current and high modulation rate of VCSELs give them significant advantages in high-speed optical communication. In the consumer electronics field, VCSELs have been widely used in functions such as facial recognition in smartphones, depth perception in augmented reality (AR) devices, and gesture recognition in smart homes. In the industrial field, the high reliability and long lifespan characteristics of VCSELs make them the core components of lidar (LiDAR) systems, providing high-precision environmental perception capabilities for autonomous vehicles. At the same time, the application of VCSELs in medical devices is also gradually expanding, such as in biosensing technologies for non-invasive blood glucose monitoring and blood oxygen saturation detection.
[0039] When packaging multiple existing VCSEL chips with different wavelengths, a lens array or a light homogenizer is often used to transmit the laser beam; however, the lens array or the light homogenizer is prone to refracting the laser beam, which easily leads to an increase in laser beam loss and a decrease in optical output efficiency. Therefore, the embodiments of the present application provide a packaging structure for a multi-wavelength VCSEL chip, which can effectively reduce laser beam loss and improve optical output efficiency; as Figure 1 shown, specifically as follows:
[0040] In the embodiments of the present application, the packaging structure of the multi-wavelength VCSEL chip includes: multiple VCSEL chips 100 with different wavelengths, a substrate 200, a lead frame 300, and an optical encapsulation glue layer 400. Among them, multiple VCSEL chips 100 are fixed on the first side of the substrate 200; that is, die bonding of multiple VCSEL chips 100 with different wavelengths is performed on the surface of the substrate 200. During the die bonding process, it is necessary to precisely place multiple VCSEL chips 100 at predetermined positions on the substrate 200 through precision equipment (such as a grating) to ensure the pitch and position accuracy between each VCSEL chip 100. The wavelength selection of the VCSEL chip 100 can be designed according to specific application requirements, such as wavelength combinations of 650 nm, 793 nm, 808 nm, 850 nm, 905 nm, 940 nm, 980 nm, and 1064 nm, etc., to meet the requirements of multi-wavelength application scenarios; through the integration of multi-wavelength VCSEL chips, a compact packaging of a multi-wavelength laser light source can be achieved, which is suitable for high-integration applications.
[0041] The lead frame 300 is embedded in the substrate 200. The pads of the lead frame 300 are arranged on the first side of the substrate 200, and the pads of multiple VCSEL chips 100 are electrically connected to the pads of the lead frame 300. The pins of the lead frame 300 are arranged on the second side of the substrate 200 opposite to the first side, and the pins of the lead frame 300 are connected to an external control circuit. The lead frame 300 is an electrical interconnection structure. By electrically connecting the pads of multiple VCSEL chips 100 to the pads of the lead frame 300, a complete electrical path is formed between multiple VCSEL chips 100 and the external control circuit. The external control circuit can be a CPU, an MCU, or a circuit composed of transistors, and specific details are not limited here. The external control circuit is used to drive the VCSEL chip 100 through the lead frame 300 and control the VCSEL chip 100 to turn on or off.
[0042] The optical encapsulation glue layer 400 covers the surfaces of multiple VCSEL chips 100 on the first side of the substrate 200, so that the functional areas of multiple VCSEL chips 100 are completely covered by the optical encapsulation glue layer. It can be understood that a pre-prepared optical encapsulation glue layer can be used to cover the surface of the VCSEL chip 100, or the optical encapsulation glue can be directly filled and cured on the surfaces of multiple VCSEL chips to form the optical encapsulation glue layer, and specific details are not limited here. It can be understood that the bottoms of multiple VCSEL chips 100 are fixed on the first side of the substrate 200, and the emission ends of multiple VCSEL chips are away from the first side of the substrate 200. At this time, the laser beams emitted by multiple VCSEL chips 100 are transmitted through the optical encapsulation glue layer 400. The light transmittance of the optical encapsulation glue layer 400 is greater than a preset light transmittance threshold, and the preset light transmittance threshold can be 95% or 96%, and specific details are not limited here. The optical encapsulation glue layer 400 has a high light transmittance, and multiple VCSEL chips 100 have low-loss optical windows, which can minimize the loss of laser beams. In addition, the optical encapsulation glue layer 400 can optimize the refractive index of the laser beam, further improving the collimation and focusing effect of the laser beam, thereby improving the overall optical performance of the laser.
[0043] It can be seen that in the embodiment of the present application, the packaging structure of the multi-wavelength VCSEL chip includes: multiple VCSEL chips with different wavelengths, a substrate, a lead frame, and an optical encapsulation glue layer. Multiple VCSEL chips are fixed on the first side of the substrate. The lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, and the pads of multiple VCSEL chips are electrically connected to the pads of the lead frame. The pins of the lead frame are arranged on the second side of the substrate opposite to the first side, and the pins of the lead frame are connected to an external control circuit. The optical encapsulation glue layer covers the surfaces of multiple VCSEL chips on the first side of the substrate, and the light transmittance of the optical encapsulation glue layer is greater than a preset light transmittance threshold.
[0044] Multiple VCSEL chips with different wavelengths are fixed on a substrate and electrically connected to a lead frame. After that, the surfaces of the multiple VCSEL chips on the first side of the substrate are covered by an optical encapsulation glue layer. The laser beams of the VCSEL chips are transmitted through the optical encapsulation glue layer, and the light transmittance of the optical encapsulation glue layer is greater than a preset light transmittance threshold. By optimizing the light beam propagation path through the optical encapsulation glue layer, the loss of laser beams can be effectively reduced, and the optical output efficiency can be improved.
[0045] In an implementable manner, the optical encapsulation glue layer completely covers the functional area of the VCSEL chip, which can ensure that the VCSEL chip is completely isolated from the external environment, thereby achieving excellent sealing performance and making the VCSEL chip have high airtightness. This sealing design can not only effectively prevent the intrusion of moisture and dust, but also improve the long-term reliability of the VCSEL chip.
[0046] Furthermore, the existing packaging size of VCSEL chips is relatively large, which is difficult to meet the requirements of wearable devices such as smart rings and bracelets. In the embodiments of the present application, the size of the substrate 200 is smaller than a preset size threshold, and the preset size threshold can be 1.6 mm in length × 0.6 mm in width × 0.18 mm in height, or 1.5 mm in length × 0.5 mm in width × 0.19 mm in height. Specifically, it is not limited here. The height of the optical encapsulation glue layer 400 is less than a preset height threshold. For example, the filling height of the optical encapsulation glue can be controlled during filling; the preset height threshold can be 0.2 mm or 0.19 mm. Specifically, it is not limited here. By restricting the size of the substrate and the height of the optical encapsulation glue layer, the height of the final packaged structure can be controlled below 0.4 mm. At this time, the overall packaging size of the packaged structure is less than 2 mm. Through the ultra-thin packaging design and precisely controlling the size of the substrate and the height of the optical encapsulation glue layer, the packaging structure of the multi-wavelength VCSEL chip can be miniaturized, so that the packaged structure can be integrated into micro-devices with extremely high space requirements, such as smart wearable devices, micro-sensors, etc., to meet the high-integration application requirements of micro-devices.
[0047] Furthermore, in the embodiments of the present application, the substrate is a gold-plated BT (Bismaleimide Triazine, resin material) board with a gold-plated surface. It can be understood that the substrate with a gold-plated surface can make the substrate have good thermal conductivity, that is, a high-thermal-conductivity packaging substrate; and the gold-plated surface can improve the electrical conductivity and signal transmission efficiency, and enhance the corrosion resistance; while the BT board has a good coefficient of thermal expansion (CTE), and the BT board has excellent electrical performance, mechanical strength and thermal stability, which can reduce thermal stress, improve the packaging stability, and meet the requirements of high-frequency signal transmission of the packaging structure.
[0048] Furthermore, the following will be combined with Figure 2 andFigure 3 Describe the packaging structure of the multi - wavelength VCSEL chip as follows:
[0049] In the embodiments of the present application, the packaging structure further includes: a plurality of Zener diodes 500; the plurality of Zener diodes 500 are fixed on the first side of the substrate 200; each VCSEL chip 100 is correspondingly connected to one Zener diode 500. It can be understood that by integrating the Zener diode through circuit design, the Zener diode, also called a voltage - regulating diode, is a special semiconductor diode that mainly plays a voltage - regulating role in the circuit, can provide over - voltage protection for the VCSEL chip, prevent voltage fluctuations from damaging the VCSEL chip, and improve the long - term stability of the packaging structure.
[0050] Furthermore, the plurality of VCSEL chips 100 and the plurality of Zener diodes 500 are fixed on the first side of the substrate 200 by high - thermal - conductivity silver glue. That is, at a predetermined position on the first side of the substrate 200, the VCSEL chips 100 and the Zener diodes 500 are pasted by high - thermal - conductivity silver glue, and then the high - thermal - conductivity silver glue is completely cured through a baking and curing process to form a stable mechanical connection. It can be understood that the high - thermal - conductivity silver glue can not only provide excellent bonding strength but also effectively improve the heat dissipation performance, ensuring the stability of the VCSEL chip during high - power operation.
[0051] Furthermore, in the embodiments of the present application, the pads of the plurality of VCSEL chips 100 are connected to the pads of different lead frames 300 through wire bonding to form an electrical path. That is, by using thermal energy, ultrasonic energy or a combination of both, an inter - atomic bond is formed between the gold wire and the metal surfaces to be connected (i.e., the pads on the VCSEL chip 100 and the pads on the lead frame 300), thus achieving reliable electrical connection and mechanical fixation. The wire bonding connection can have good electrical conductivity and high mechanical strength. Connecting the pads of the plurality of VCSEL chips 100 to the pads of different lead frames 300 can drive the plurality of VCSEL chips 100 separately, and each VCSEL chip of each wavelength can work independently without interference. This design not only improves the flexibility of the system but also can dynamically adjust the output power of each wavelength laser according to actual needs, thereby optimizing the overall performance.
[0052] The embodiments of the present application also provide a packaging method for a multi - wavelength VCSEL chip, as Figure 4 shown, which specifically includes the following steps:
[0053] 401. Fix a plurality of VCSEL chips with different wavelengths on the first side of the substrate.
[0054] In the embodiments of the present application, multiple VCSEL chips with different wavelengths can be fixed on the first side of the substrate. For example, multiple VCSEL chips can be fixed on the first side of the substrate through highly thermally conductive silver glue for die bonding of the multiple VCSEL chips.
[0055] 402. Electrically connect the pads of the multiple VCSEL chips to the pads of the lead frame.
[0056] After die bonding is completed, the pads of the multiple VCSEL chips can be electrically connected to the pads of the lead frame. Among them, the lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, the pins of the lead frame are arranged on the second side of the substrate relative to the first side, and the pins of the lead frame are connected to an external control circuit. By electrically connecting the pads of the multiple VCSEL chips to the pads of the lead frame and connecting the pins of the lead frame to the external control circuit, the external control circuit can drive the multiple VCSEL chips.
[0057] 403. Cover the surfaces of the multiple VCSEL chips on the first side of the substrate with an optical encapsulation glue layer to obtain a packaging structure of the multi-wavelength VCSEL chips.
[0058] After die bonding and electrical connection are completed, the surfaces of the multiple VCSEL chips on the first side of the substrate can be covered with an optical encapsulation glue layer to obtain a packaging structure of the multi-wavelength VCSEL chips. Among them, the light transmittance of the optical encapsulation glue layer is greater than a preset light transmittance threshold.
[0059] Among them, an optical encapsulation glue can be filled and cured on the surfaces of the multiple VCSEL chips on the first side of the substrate to form an optical encapsulation glue layer. That is, an optical encapsulation glue can be directly filled, film-pressed, and cured on the surfaces of the multiple VCSEL chips through a mold to ensure that the functional areas of the VCSEL chips are completely covered by the optical encapsulation glue. When filling, it is necessary to control the height of the encapsulation glue to make the height of the finished packaging structure smaller and miniaturize the packaging structure.
[0060] It can be seen that in the embodiments of the present application, the surfaces of the multiple VCSEL chips on the first side of the substrate are covered by the optical encapsulation glue layer, the laser beams of the VCSEL chips are transmitted through the optical encapsulation glue layer, and the light transmittance of the optical encapsulation glue layer is greater than the preset light transmittance threshold. By optimizing the light beam propagation path through the optical encapsulation glue layer, the loss of the laser beams can be effectively reduced and the optical output efficiency can be improved.
[0061] Further, during the encapsulation process, a large number of VCSEL chips with different wavelengths can be encapsulated together. After the encapsulation is completed, the encapsulated structure needs to be segmented. Specifically, when the optical encapsulation glue is cured, the encapsulated structure is segmented based on the preset specifications of the laser emission element to obtain a plurality of laser emission elements. Among them, the preset specifications of the laser emission element are at least two VCSEL chips with different wavelengths, and specific details are not limited here. When the optical encapsulation glue is cured, the optical encapsulation glue layer and the substrate of the encapsulated structure can be segmented based on the preset specifications by using a cutting device to ensure that the size and shape of each laser emission element meet the design requirements. The single laser emission element after segmentation has a smooth surface and consistent performance and can be directly used for subsequent assembly and application.
[0062] The embodiment of the present application also provides a packaging device for multi-wavelength VCSEL chips, as Figure 5 shown, including:
[0063] A determination unit 501, configured to fix a plurality of VCSEL chips with different wavelengths on the first side of the substrate;
[0064] A connection unit 502, configured to electrically connect the pads of the plurality of VCSEL chips to the pads of the lead frame; wherein, the lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, the pins of the lead frame are arranged on the second side of the substrate relative to the first side, and the pins of the lead frame are connected to an external control circuit;
[0065] A covering unit 503, configured to cover the surfaces of the plurality of VCSEL chips on the first side of the substrate with an optical encapsulation glue layer to obtain a packaging structure of multi-wavelength VCSEL chips, and the light transmittance of the optical encapsulation glue layer is greater than a preset light transmittance threshold.
[0066] The embodiment of the present application also provides a laser emission device, including the packaging structure of the multi-wavelength VCSEL chip described above. Among them, the laser emission device can be a laser communicator or a laser sensor, etc., and specific details are not limited here.
[0067] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention, and they should all be covered by the scope of the claims and the description of the present invention.
Claims
1. A packaging structure of a multi-wavelength VCSEL chip, characterized in that Comprising: Multiple VCSEL chips of different wavelengths, a substrate, a lead frame, and an optical encapsulation glue layer; Multiple of the VCSEL chips are fixed to the first side of the substrate; The lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, and the pads of multiple VCSEL chips are electrically connected to the pads of the lead frame; the pins of the lead frame are arranged on the second side of the substrate opposite to the first side, and the pins of the lead frame are connected to an external control circuit; The optical encapsulation glue layer covers the surfaces of multiple VCSEL chips on the first side of the substrate, and the light transmittance of the optical encapsulation glue layer is greater than a preset light transmittance threshold.
2. The encapsulation structure according to claim 1, wherein The size of the substrate is smaller than a preset size threshold; the height of the optical encapsulation glue layer is smaller than a preset height threshold.
3. The encapsulation structure according to claim 1, wherein The substrate is a gold-plated BT board with a gold-plated surface.
4. The encapsulation structure according to claim 1, wherein Further comprising: Multiple Zener diodes; Multiple of the Zener diodes are fixed to the first side of the substrate; Each VCSEL chip is correspondingly connected to one of the Zener diodes.
5. The encapsulation structure according to claim 4, characterized in that, Multiple of the VCSEL chips and multiple of the Zener diodes are fixed to the first side of the substrate by high thermal conductivity silver glue.
6. The encapsulation structure according to claim 1, wherein The pads of multiple VCSEL chips are connected to the pads of different lead frames by wire bonding with gold wires.
7. A packaging method for a multi-wavelength VCSEL chip, characterized in that, Comprising: Fixing multiple VCSEL chips of different wavelengths to the first side of a substrate; Electrically connecting the pads of multiple of the VCSEL chips to the pads of a lead frame; wherein, the lead frame is embedded in the substrate, the pads of the lead frame are arranged on the first side of the substrate, the pins of the lead frame are arranged on the second side of the substrate opposite to the first side, and the pins of the lead frame are connected to an external control circuit; Covering an optical encapsulation glue layer on the surfaces of multiple VCSEL chips on the first side of the substrate to obtain a packaging structure of a multi-wavelength VCSEL chip, and the light transmittance of the optical encapsulation glue layer is greater than a preset light transmittance threshold.
8. The encapsulation method according to claim 7, wherein, The covering the optical encapsulation glue layer on the surfaces of multiple VCSEL chips on the first side of the substrate comprises: Filling and curing an optical encapsulation glue on the surfaces of multiple VCSEL chips on the first side of the substrate to form the optical encapsulation glue layer.
9. The encapsulation method according to claim 8, wherein The method further comprises: When the optical encapsulation glue is cured, dividing the packaging structure based on a preset specification of a laser emitting element to obtain multiple laser emitting elements.
10. A laser emission device, characterized in that, Comprising the packaging structure of the multi-wavelength VCSEL chip according to any one of claims 1 to 6 above.