Silicon material processing method and silicon wafer

Abstract

The invention discloses a silicon material processing method and a silicon wafer, and belongs to the technical field of silicon wafer manufacturing, and the silicon material processing method comprises the steps: controlling the silicon wafer to move at a feeding speed relative to a cutting line in a feeding direction until the silicon wafer is separated from the cutting line; the moving process of the silicon wafer comprises a deceleration stage; wherein the feeding speed in the speed reduction stage is reduced from the first feeding speed to the second feeding speed. The feeding speed is reduced at the tail end of the moving process of the silicon wafers, so that the possibility that the silicon wafers are damaged when the cutting line passes through the narrow gap between the adjacent silicon wafers is reduced, and the yield of the moving process of the silicon wafers is improved. And meanwhile, the first feeding speed is higher than the second feeding speed, namely, the feeding speed can quickly pass through the gap at the wider gap between the adjacent silicon wafers, so that the silicon material treatment efficiency is improved, and the material lifting time is shortened.

Description

Technical Field

[0001] This application belongs to the technical field of silicon wafer manufacturing, and specifically relates to a silicon material processing method and a silicon wafer. Background Art

[0002] The silicon rod connected to the resin plate forms multiple silicon wafers arranged at intervals after being cut by a cutting wire. In order to take out the silicon wafers, it is necessary to make the cutting wire and the silicon wafers move relatively in the opposite direction to the cutting direction, so that the silicon wafers can be separated from the cutting wire, that is, lifting the material.

[0003] However, since the cutting wire still contacts the silicon wafers during the process of lifting the material, this causes the cutting wire to damage the silicon wafers during the process of lifting the material, affecting the yield of the silicon wafers. Summary of the Invention

[0004] Object of the Invention: This application provides a silicon material processing method for solving the technical problem of the cutting wire damaging the silicon wafers during the process of lifting the material; another object of this application is to provide a silicon wafer.

[0005] Technical Solution: This application provides a silicon material processing method, which includes controlling the silicon wafer to move relative to the cutting wire along the feeding direction at a feeding speed until the silicon wafer is separated from the cutting wire;

[0006] The process of the silicon wafer moving includes a deceleration stage;

[0007] Wherein, the feeding speed in the deceleration stage is reduced from a first feeding speed to a second feeding speed.

[0008] In some embodiments, the process of the silicon wafer moving further includes an acceleration stage, and the acceleration stage is before the deceleration stage;

[0009] Wherein, the feeding speed in the acceleration stage is increased from a third feeding speed to a fourth feeding speed.

[0010] In some embodiments, the process of the silicon wafer moving further includes a starting stage, and the starting stage is before the deceleration stage; in the starting stage, the silicon wafer is controlled to move relative to the cutting wire along the feeding direction at a fifth feeding speed, and the fifth feeding speed is less than the first feeding speed; when the starting stage ends, the cutting wire is separated from the resin plate.

[0011] In some embodiments, the silicon wafer has a maximum dimension D along the feeding direction; in the deceleration stage, the feeding distance of the silicon wafer moving relative to the cutting wire along the feeding direction is l2, satisfying: 0.5D ≤ l2 ≤ 0.58D.

[0012] In some embodiments, the deceleration stage includes a wire retracting sub-stage; in the wire retracting sub-stage, the silicon wafer is controlled to move relative to the cutting wire along the feeding direction at the second feeding speed.

[0013] In some embodiments, the silicon wafer has a maximum dimension D in the feed direction; during the knife retraction stage, the feed distance of the silicon wafer relative to the cutting line in the feed direction is l 23 , satisfying: 0.05D ≤ l 23 ≤ 0.15D.

[0014] In some embodiments, the second feed speed V2 satisfies: 3 mm / min ≤ V2 ≤ 10 mm / min.

[0015] In some embodiments, the fifth feed speed V5 satisfies: 1 mm / min ≤ V5 ≤ 10 mm / min.

[0016] In some embodiments, the fourth feed speed V4 satisfies: 40 mm / min ≤ V4 ≤ 60 mm / min.

[0017] In some embodiments, the deceleration stage includes a first deceleration sub-stage and a second deceleration sub-stage after the first deceleration sub-stage; within the first deceleration sub-stage, the silicon wafer is controlled to move relative to the cutting line at a first feed speed in the feed direction; within the second deceleration sub-stage, the silicon wafer is controlled to move relative to the cutting line at a sixth feed speed in the feed direction, and the sixth feed speed is less than the first feed speed and greater than the second feed speed.

[0018] In some embodiments, the acceleration stage includes a first acceleration sub-stage and a second acceleration sub-stage after the first acceleration sub-stage; within the first acceleration sub-stage, the silicon wafer is controlled to move relative to the cutting line at a third feed speed in the feed direction; within the second acceleration sub-stage, the silicon wafer is controlled to move relative to the cutting line at a fourth feed speed in the feed direction; wherein, the silicon wafer has a maximum dimension D in the feed direction; within the second acceleration sub-stage, the feed distance of the silicon wafer relative to the cutting line in the feed direction is l 13 , satisfying: 0.37D ≤ l 13 ≤ 0.44D.

[0019] In some embodiments, the cutting line has a linear speed; during material lifting, the linear speed of the cutting line is reduced from a first linear speed to a second linear speed;

[0020] wherein, material lifting further includes a starting stage, and the starting stage is after the deceleration stage; at the end of the starting stage, the cutting line is separated from the resin plate; during the starting stage, the linear speed of the cutting line is reduced from the first linear speed to the second linear speed.

[0021] In some embodiments, during the starting stage, the feed distance l of the silicon wafer relative to the cutting line in the feed direction 11, the resin plate has a first groove and a second groove, the first groove and the second groove communicate with each other, the silicon wafer is arranged in the second groove, the first groove has a maximum dimension H1 along the feeding direction, and the second groove has a maximum dimension H2 along the feeding direction, satisfying: l 11 ≤H1 - H2.

[0022] In some embodiments, the part of the cutting wire in contact with the silicon wafer during material lifting is at least part of the part of the cutting wire in contact with the silicon rod during cutting the silicon rod.

[0023] In some embodiments, a nozzle is used to inject a first cutting fluid into the gap of the resin plate, and the landing point of the first cutting fluid is located on the side of the silicon wafer close to the resin plate along the feeding direction. The nozzle has a pressure P and a first flow rate Q, satisfying: 0.03 bar ≤ P ≤ 20 bar, 2.5 L / min ≤ Q ≤ 15.5 L / min.

[0024] In some embodiments, a nozzle is used to shoot a second cutting fluid onto the cutting wire so that the cutting wire can bring the second cutting fluid into the gap between adjacent silicon wafers. The nozzle has a second flow rate q, satisfying: 20 L / min < q < 200 L / min.

[0025] Correspondingly, the present application also provides a silicon wafer obtained by using the silicon material processing method according to any one of the above embodiments.

[0026] Beneficial effects: In the silicon material processing method provided by the embodiments of the present application, the silicon wafer is controlled to move relative to the cutting wire along the feeding direction at a feeding speed until the silicon wafer is separated from the cutting wire; the moving process of the silicon wafer includes a deceleration stage; when the deceleration stage ends, the cutting wire is separated from the silicon wafer; wherein, the feeding speed in the deceleration stage is reduced from a first feeding speed to a second feeding speed. The present application decelerates the feeding speed at the end of the moving process of the silicon wafer 2 to reduce the possibility of damaging the silicon wafer when the cutting wire passes through the narrow gap between adjacent silicon wafers, thereby improving the yield of the moving process of the silicon wafer 2. At the same time, since the first feeding speed is greater than the second feeding speed, that is, the feeding speed can quickly pass through the gap at the wide gap between adjacent silicon wafers, thereby improving the efficiency of material lifting and shortening the time of material lifting. Description of the Drawings

[0027] The following combines the drawings and describes the specific embodiments of the present application in detail, and the technical solutions and other beneficial effects of the present application will be obvious.

[0028] Figure 1 It is a schematic diagram of the relationship between the feeding speed and the distance that the silicon wafer moves relative to the cutting wire along the feeding direction in the silicon material processing method provided by the embodiments of the present application;

[0029] Figure 2Schematic diagram of the relationship between the linear velocity and the distance that the silicon wafer moves relative to the cutting wire in the feeding direction in the silicon material processing method provided by the embodiment of the present application;

[0030] Figure 3 Schematic diagram of the feeding distances in each stage and each sub-stage in the silicon material processing method provided by the embodiment of the present application;

[0031] Figure 4 Schematic structural diagram of the device using the silicon material processing method provided by the embodiment of the present application;

[0032] Figure 5 Flow chart of the silicon material processing method provided by some embodiments of the present application;

[0033] Figure 6 Flow chart of the silicon material processing method provided by some embodiments of the present application;

[0034] Figure 7 Flow chart of the silicon material processing method provided by some embodiments of the present application.

[0035] Explanation of reference numerals:

[0036] 1 - resin plate; 2 - silicon wafer; 3 - material seat; 4 - nozzle; 5 - first cutting fluid; 6 - nozzle; 7 - second cutting fluid; 8 - cutting wire; 11 - first part; 12 - second part; 13 - third part, 14 - first groove, 15 - second groove, 16 - third groove; 21 - fourth part; 22 - fifth part; 23 - sixth part; X - feeding direction. Detailed implementation manners

[0037] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0038] In the description of the present application, it should be noted that unless otherwise clearly specified and defined, the terms "connected" and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a connection that allows mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, and can be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise clearly specifically defined. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0039] The following disclosure provides many different embodiments or examples for implementing different structures of the present application. To simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are only examples and are not intended to limit the present application.

[0040] The silicon rod connected to the resin plate 1 is formed into a plurality of spaced silicon wafers 2 after being cut by the cutting wire 8. To take out the silicon wafers 2, it is necessary to make the cutting wire 8 and the silicon wafers 2 move relatively in the opposite direction to the cutting direction so that the silicon wafers 2 can be separated from the cutting wire 8, that is, to pick up the material.

[0041] However, since the cutting wire 8 still contacts the silicon wafers 2 during the material picking process, the cutting wire 8 will also cause damage to the silicon wafers 2 during the material picking process, affecting the yield of the silicon wafers 2.

[0042] It can be understood that during the cutting process of the silicon rod, the cutting wire 8 forms a first groove 14 and a third groove 16 on the silicon rod and the resin plate 1 respectively. The third groove 16 penetrates the silicon rod along the feeding direction X, dividing the silicon rod into a plurality of silicon wafers 2 and forming a gap between adjacent silicon wafers 2. After cutting, the cutting wire 8 is embedded in the first groove 14. One side of the silicon wafer 2 close to the resin plate 1 along the feeding direction X can be positioned because it is fixedly connected to the resin plate 1 and is not likely to move along the axial direction of the silicon rod. However, the side of the silicon wafer 2 away from the resin plate 1 along the feeding direction X is suspended and not positioned, and may move along the axial direction of the silicon rod. As a result, the size of the gap between adjacent silicon wafers 2 on the side away from the resin plate 1 decreases and is smaller than the outer diameter of the cutting wire 8, and even adjacent silicon wafers 2 adsorb to each other on the side away from the resin plate 1. When picking up the material, the cutting wire 8 that needs to pass through the first groove 14 and the third groove 16 in sequence will cause wear to the silicon wafers 2 when passing through the gap with a gradually decreasing size along the feeding direction X to expand the size of the gap, resulting in a reduction in the yield of the silicon wafers 2.

[0043] Among them, please refer to Figure 3 , the axis of the silicon rod is perpendicular to the picture.

[0044] To solve the technical problem that the cutting line 8 may damage the silicon wafer 2 during the above-mentioned material feeding, the first embodiment of the present application provides a silicon material processing method. Please refer to Figure 1 and Figure 7 , control the silicon wafer 2 to move relative to the cutting line 8 along the feeding direction X at a feeding speed until the silicon wafer 2 is separated from the cutting line 8; the process of moving the silicon wafer 2 includes a deceleration stage; among them, the feeding speed in the deceleration stage is reduced from the first feeding speed to the second feeding speed.

[0045] Among them, Figure 1 the vertical axis in is the feeding speed of the silicon wafer 2 relative to the cutting line 8 along the feeding direction X, and the horizontal axis is the feeding distance of the silicon wafer 2 relative to the cutting line 8 along the feeding direction X.

[0046] Among them, Figure 1 V1 on the vertical axis in corresponds to the first feeding speed, that is, the value of the first feeding speed is V1;

[0047] Figure 1 V2 on the vertical axis in corresponds to the second feeding speed, that is, the value of the first feeding speed is V2;

[0048] Figure 1 V3 on the vertical axis in corresponds to the third feeding speed, that is, the value of the first feeding speed is V3;

[0049] Figure 1 V4 on the vertical axis in corresponds to the fourth feeding speed, that is, the value of the first feeding speed is V4;

[0050] Figure 1 V5 on the vertical axis in corresponds to the fifth feeding speed, that is, the value of the first feeding speed is V5;

[0051] Figure 1 V6 on the vertical axis in corresponds to the sixth feeding speed, that is, the value of the first feeding speed is V6.

[0052] The feeding distance in the deceleration stage corresponds to the length from L3 to L6, that is, the feeding distance in the deceleration stage is the difference between L6 and L3.

[0053] Specifically, the separation of the cutting line 8 from the silicon wafer 2 means that the cutting line 8 moves out of the gap between adjacent silicon wafers 2. In other words, the deceleration stage is the last stage when the cutting line 8 is in contact with the silicon wafer 2 during the movement of the silicon wafer 2.

[0054] Specifically, the first feed speed is greater than the second feed speed. That is, during the deceleration stage, the silicon wafer 2 moves in a decelerated manner relative to the cutting wire 8 along the feed direction X, and the feed speed needs to be reduced from the first feed speed to the second feed speed. At the end of the deceleration stage, the feed speed of the silicon wafer 2 relative to the cutting wire 8 along the feed direction X is the second feed speed.

[0055] It can be understood that the second feed speed is the minimum value of the feed speed during the deceleration stage. For ease of explanation, please refer to Figure 3 , in some embodiments, after the silicon wafer 2 and the resin plate 1 are connected, they include a first part 11, a second part 12, a third part 13, a fourth part 21, a fifth part 22, and a sixth part 23 that are sequentially connected along the feed direction X, and the first part 11 is close to the stock base 3 along the feed direction X.

[0056] Among them, when the movement process of the silicon wafer 2 is in the deceleration stage, along the axial direction of the silicon rod, that is Figure 3 the direction perpendicular to the drawing in, the orthographic projection of the cutting wire 8 in the plane perpendicular to the axial direction of the silicon rod is located within the orthographic projections of the fourth part 21, the fifth part 22, and the sixth part 23 in the plane perpendicular to the axial direction of the silicon rod. It can be seen that the deceleration stage is the last stage of the movement process of the silicon wafer 2. When the deceleration stage ends, the cutting wire 8 separates from the silicon wafer 2.

[0057] In some embodiments, at the moment when the deceleration stage ends, the cutting wire 8 separates from the silicon wafer 2; in some embodiments, before the deceleration stage ends, the cutting wire 8 has already separated from the silicon wafer 2.

[0058] In the above embodiments, by reducing the feed speed of the silicon wafer 2 relative to the cutting wire 8 along the feed direction X in the last stage when the cutting wire 8 is in contact with the silicon wafer 2, so that when the cutting wire 8 passes through a gap whose size gradually decreases along the feed direction X, the silicon wafer 2 on both sides of the gap with a gradually decreasing size is pushed away along the axial direction of the silicon rod, so that the size of the gap increases to allow the cutting wire 8 to pass through the gap, reducing the possibility of the cutting wire 8 scratching the silicon wafer 2 and improving the yield of the silicon wafer 2.

[0059] In some embodiments, please refer to Figure 1 , Figure 5 and Figure 6 , the movement process of the silicon wafer 2 further includes an acceleration stage, and the acceleration stage is before the previous deceleration stage; wherein, the feed speed in the acceleration stage is increased from the third feed speed to the fourth feed speed.

[0060] In some embodiments, the deceleration stage starts immediately after the acceleration stage ends; in other embodiments, there is an interval between the acceleration stage and the deceleration stage.

[0061] The feed distance in the acceleration stage corresponds to the lengths of L1 to L3, that is, the feed distance in the acceleration stage is the difference between L3 and L1.

[0062] Specifically, the sequential progression of the acceleration stage and the deceleration stage means that during the movement of the wafer 2, the acceleration stage is experienced first and then the deceleration stage.

[0063] Specifically, the third feed speed is less than the fourth feed speed. That is, within the acceleration stage, the wafer 2 moves with an acceleration along the feed direction X relative to the cutting line 8, and the feed speed needs to be increased from the third feed speed to the fourth feed speed. At the end of the acceleration stage, the feed speed of the wafer 2 along the feed direction X relative to the cutting line 8 is the fourth feed speed.

[0064] In some embodiments, the fourth feed speed is equal to the first feed speed.

[0065] It can be understood that during the entire movement of the wafer 2, the greater the average value of the feed speed, the less time is spent in the movement process of the wafer 2.

[0066] It can be understood that the second feed speed is the minimum value of the feed speed in the deceleration stage.

[0067] For ease of explanation, please refer to Figure 3 , in some embodiments, after the wafer 2 and the resin plate 1 are connected, along the feed direction X, they include a first part 11, a second part 12, a third part 13, a fourth part 21, a fifth part 22, and a sixth part 23 that are sequentially connected, and the first part 11 is close to the material seat 3 along the feed direction X.

[0068] Among them, when the movement process of the wafer 2 is in the acceleration stage, along the axial direction of the silicon rod, that is, Figure 3 the direction perpendicular to the drawing in, the orthographic projection of the cutting line 8 in the plane perpendicular to the axial direction of the silicon rod is located within the orthographic projections of the second part 12 and the third part 13 in the plane perpendicular to the axial direction of the silicon rod.

[0069] In the above embodiments, when the cutting line 8 passes through the larger dimension of the gap, the feed speed is increased from the third feed speed to the fourth feed speed, so as to increase the average value of the feed speed during the movement of the wafer 2 on the premise that the cutting line 8 is not likely to scratch the wafer 2, thereby enabling the movement process of the wafer 2 to end as soon as possible, and improving the feeding efficiency on the premise of ensuring the yield of the wafer 2.

[0070] In some embodiments, please refer to Figure 1 , Figure 5 and Figure 6, the process of moving the silicon wafer 2 further includes a starting stage, which is before the deceleration stage; in the starting stage, the silicon wafer 2 is controlled to move relative to the cutting wire 8 along the feeding direction X at a fifth feeding speed, and the fifth feeding speed is less than the first feeding speed; at the end of the starting stage, the cutting wire 8 is separated from the resin plate 1.

[0071] Since the fifth feeding speed is less than the first feeding speed, and the starting stage is before the deceleration stage, that is, after the starting stage ends, the feeding speed needs to be accelerated from the fifth feeding speed to the first feeding speed. In some embodiments, there is an acceleration stage between the starting stage and the deceleration stage.

[0072] The feeding distance in the starting stage corresponds to the length from the origin to L1, that is, the feeding distance in the starting stage is L1.

[0073] As can be seen from the foregoing, the cutting wire 8 also needs to be separated from the resin plate 1 during the movement of the silicon wafer 2.

[0074] For ease of description, please refer to Figure 3 , in some embodiments, after the silicon wafer 2 and the resin plate 1 are connected, along the feeding direction X, they include a first part 11, a second part 12, a third part 13, a fourth part 21, a fifth part 22, and a sixth part 23 that are sequentially connected, and the first part 11 is close to the stock seat 3 along the feeding direction X.

[0075] Among them, when the process of moving the silicon wafer 2 is in the starting stage, along the axis direction of the silicon rod, that is, Figure 3 the direction perpendicular to the drawing in

[0076] the positive projection of the cutting wire 8 in the plane perpendicular to the axis direction of the silicon rod is located within the positive projection of the first part 11 in the plane perpendicular to the axis direction of the silicon rod.

[0077] In some embodiments, please refer to Figure 3 , through Figure 3It can be known that when in the deceleration stage, the cutting line 8 contacts the part of the silicon wafer 2 that is away from the resin plate 1 along the feeding direction X, and the silicon wafer 2 has the maximum dimension D along the feeding direction X; in the deceleration stage, the feeding distance of the silicon wafer 2 moving relative to the cutting line 8 along the feeding direction X is l2, satisfying: 0.5D ≤ l2 ≤ 0.58D.

[0078] Specifically, the value of l2 can be any value among 0.5D, 0.51D, 0.52D, 0.53D, 0.54D, 0.55D, 0.56D, 0.57D, 0.58D or any value within the range between any two of these values.

[0079] When the value of l2 is larger, the distance that the silicon wafer 2 moves relative to the cutting line 8 along the feeding direction X in the deceleration stage is longer, and the possibility of the cutting line 8 scratching the silicon wafer 2 is lower; when the value of l2 is smaller, the proportion of the deceleration stage in the entire movement process of the silicon wafer 2 is smaller, and during the entire movement process of the silicon wafer 2, the average value of the feeding speed is larger, and the feeding efficiency is higher; when the value of l2 is within the range defined in the embodiments of the present application, the possibility of the cutting line 8 scratching the silicon wafer 2 is lower, and the feeding efficiency is also higher.

[0080] In the above embodiments, by limiting the value of l2, on the premise of ensuring the feeding efficiency, the possibility of the cutting line 8 scratching the silicon wafer 2 is reduced, and the yield of the silicon wafer 2 is improved.

[0081] In some embodiments, please refer to Figure 1 , the deceleration stage includes a knife retracting sub-stage; in the knife retracting sub-stage, the silicon wafer 2 is controlled to move relative to the cutting line 8 along the feeding direction X at a second feeding speed.

[0082] In some embodiments, at the moment when the knife retracting sub-stage ends, the cutting line 8 separates from the silicon wafer 2; in some embodiments, before the knife retracting sub-stage ends, the cutting line 8 has already separated from the silicon wafer 2. The feeding distance in the knife retracting sub-stage corresponds to the length from L5 to L6, that is, the feeding distance in the knife retracting sub-stage is the difference between L6 and L5.

[0083] In some embodiments, in the knife retracting sub-stage, the silicon wafer 2 is controlled to move relative to the cutting line 8 along the feeding direction X at a second feeding speed.

[0084] In some embodiments, in the receiving sub-stage, the silicon wafer 2 is controlled to move relative to the cutting line 8 at a second feeding speed along the feeding direction X at a uniform speed.

[0085] It can be understood that since the second feeding speed is the minimum feeding speed in the deceleration stage, that is, in the knife retracting sub-stage, the silicon wafer 2 moves relative to the cutting line 8 at the minimum feeding speed in the deceleration stage.

[0086] For the convenience of description, please refer to Figure 3, in some embodiments, after the silicon wafer 2 and the resin plate 1 are connected, along the feeding direction X, they include a first part 11, a second part 12, a third part 13, a fourth part 21, a fifth part 22, and a sixth part 23 that are sequentially connected, and the first part 11 is close to the stock base 3 along the feeding direction X.

[0087] When the process of the movement of the silicon wafer 2 is in the stage of retracting the knife, along the axial direction of the silicon rod, the orthographic projection of the cutting wire 8 in the plane perpendicular to the axial direction of the silicon rod is located within the orthographic projection of the sixth part 23 in the plane perpendicular to the axial direction of the silicon rod.

[0088] In the above embodiments, by reducing the feeding speed of the silicon wafer 2 relative to the cutting wire 8 at the stage of retracting the knife, that is, near the end of the entire movement process of the silicon wafer 2, the stability of the knife retracting process is improved, and the possibility of the silicon wafer 2 being scratched due to the sudden separation of the silicon wafer 2 and the cutting wire 8 is reduced.

[0089] In some embodiments, please refer to Figure 3 , the silicon wafer 2 has a maximum dimension D along the feeding direction X; at the stage of retracting the knife, the feeding distance of the silicon wafer 2 moving relative to the cutting wire 8 along the feeding direction X is l 23 , satisfying: 0.05D ≤ l 23 ≤ 0.15D.

[0090] In some embodiments, the silicon wafer 2 is a circular silicon wafer 2, and the maximum dimension D along the feeding direction X is the radius of the silicon wafer 2; in other embodiments, the silicon wafer 2 is a square silicon wafer 2, and the maximum dimension D along the feeding direction X is the side length of the silicon wafer 2.

[0091] Specifically, the value of l 23 can be any one value of 0.05D, 0.06D, 0.07D, 0.08D, 0.09D, 0.1D, 0.11D, 0.12D, 0.13D, 0.14D, 0.15D or any value within the range between any two values.

[0092] When the value of l 23 is larger, the distance that the silicon wafer 2 moves relative to the cutting wire 8 along the feeding speed at the stage of retracting the knife is larger, and the feeding speed can be reduced earlier, so that the stage of retracting the knife is more stable and the yield of the silicon wafer 2 is higher; when the value of l 23 is smaller, the distance that the silicon wafer 2 moves relative to the cutting wire 8 along the feeding speed at the stage of retracting the knife is smaller, and the feeding speed can be reduced later, and the average value of the feeding speed during the entire movement process of the silicon wafer 2 is increased, and the efficiency of lifting the material is higher; when the value of l 23 is within the range defined by the embodiments of the present application, the yield of the silicon wafer 2 is relatively high, and the efficiency of lifting the material is also relatively high.

[0093] In the above embodiments, by limiting l 23The value is to ensure the yield rate of the silicon wafer 2 during the movement of the silicon wafer 2, so that there is enough distance between the cutting line 8 and the silicon wafer 2 for relative movement at a lower feed rate. At the same time, it can also make the proportion of the knife retraction stage in the whole process of the movement of the silicon wafer 2 as small as possible, so as to obtain a higher material lifting efficiency.

[0094] In some embodiments, please refer to Figure 1 , the second feed rate V2 satisfies: 3 mm / min ≤ V2 ≤ 10 mm / min.

[0095] Specifically, the value of V2 can be any value among 3 mm / min, 3.5 mm / min, 4 mm / min, 4.5 mm / min, 5 mm / min, 5.5 mm / min, 6 mm / min, 6.5 mm / min, 7 mm / min, 7.5 mm / min, 8 mm / min, 8.5 mm / min, 9 mm / min, 9.5 mm / min, 10 mm / min or any value within the range between any two of them.

[0096] When the value of V2 is larger, the average value of the feed rate in the whole deceleration stage is larger, the average value of the feed rate in the whole process of the movement of the silicon wafer 2 is larger, and the material lifting efficiency is higher; when the value of V2 is smaller, the relative movement of the silicon wafer 2 relative to the cutting line 8 is more stable at the end of the movement process of the silicon wafer 2, the silicon wafer 2 is not easily scratched, and the yield rate is higher; when the value of V2 is within the range defined in the embodiments of the present application, both the material lifting efficiency can be improved and the movement process of the silicon wafer 2 can have a good yield rate.

[0097] In the above embodiments, by limiting the value of V2, the yield rate of the process of moving the silicon wafer 2 is improved while the material lifting efficiency is improved.

[0098] In some embodiments, please refer to Figure 1 , the fifth feed rate V5 satisfies: 1 mm / min ≤ V5 ≤ 10 mm / min.

[0099] Specifically, the value of V5 can be any value among 1 mm / min, 1.5 mm / min, 2 mm / min, 2.5 mm / min, 3 mm / min, 3.5 mm / min, 4 mm / min, 4.5 mm / min, 5 mm / min, 5.5 mm / min, 6 mm / min, 6.5 mm / min, 7 mm / min, 7.5 mm / min, 8 mm / min, 8.5 mm / min, 9 mm / min, 9.5 mm / min, 10 mm / min or any value within the range between any two of them.

[0100] When the value of V5 is larger, the feed speed during the entire starting stage is larger, and the average value of the feed speed during the process of the entire wafer 2 moving is larger, and the feeding efficiency is higher; when the value of V5 is smaller, the feed speed of the relative movement of the wafer 2 with respect to the cutting wire 8 is lower. Since the cutting wire 8 contacts the resin plate 1 at this time, the slower feed speed allows the cutting wire 8 to have more time to polish the resin plate 1 to increase the size of the first groove 14 along the axial direction of the silicon rod, reducing the possibility of the cutting wire 8 getting hung up when passing through the first groove 14. The larger-sized first groove 14 can also allow more of the first cutting fluid 5 to enter, further reducing the possibility of getting hung up, thereby improving the yield of feeding; when the value of V5 is within the range defined in the embodiments of the present application, it can not only improve the feeding efficiency but also enable the process of the wafer 2 moving to have a better yield.

[0101] In the above embodiments, by defining the value of V5, while improving the feeding efficiency, the yield of the process of the wafer 2 moving is improved.

[0102] In some embodiments, please refer to Figure 1 , the fourth feed speed V4 satisfies: 40 mm / min ≤ V4 ≤ 60 mm / min.

[0103] Specifically, the value of V4 can be any value among 40 mm / min, 41 mm / min, 42 mm / min, 43 mm / min, 44 mm / min, 45 mm / min, 46 mm / min, 47 mm / min, 48 mm / min, 49 mm / min, 50 mm / min, 51 mm / min, 52 mm / min, 53 mm / min, 54 mm / min, 55 mm / min, 56 mm / min, 57 mm / min, 58 mm / min, 59 mm / min, 60 mm / min or any value within the range between any two of these values.

[0104] When the value of V4 is larger, the average value of the feed speed during the entire acceleration stage is larger, and the average value of the feed speed during the process of the entire wafer 2 moving is larger, and the feeding efficiency is higher; when the value of V4 is smaller, the feed speed of the relative movement of the wafer 2 with respect to the cutting wire 8 is lower, and the stability of the wafer 2 during relative movement is higher, and the yield of feeding is higher; when the value of V4 is within the range defined in the embodiments of the present application, it can not only improve the feeding efficiency but also enable the process of the wafer 2 moving to have a better yield.

[0105] In the above embodiments, by defining the value of V4, while improving the feeding efficiency, the yield of the process of the wafer 2 moving is improved.

[0106] In some embodiments, please refer to Figure 1 and Figure 6, the deceleration stage includes a first deceleration sub-stage and a second deceleration sub-stage after the first deceleration sub-stage; within the first deceleration sub-stage, the control wafer 2 moves relative to the cutting wire 8 along the feed direction X at a first feed speed; within the second deceleration sub-stage, the control wafer 2 moves relative to the cutting wire 8 along the feed direction X at a sixth feed speed, the sixth feed speed being less than the first feed speed and greater than the second feed speed.

[0107] In some embodiments, the second deceleration sub-stage starts immediately after the end of the first deceleration sub-stage; in other embodiments, there is an interval between the first deceleration sub-stage and the second deceleration sub-stage. The feed distance of the first deceleration sub-stage corresponds to the length from L3 to L4, that is, the feed distance of the first deceleration sub-stage is the difference between L4 and L3.

[0108] The feed distance of the second deceleration sub-stage corresponds to the length from L4 to L5, that is, the feed distance of the second deceleration sub-stage is the difference between L5 and L4.

[0109] For ease of illustration, please refer to Figure 3 , in some embodiments, after the wafer 2 and the resin plate 1 are connected, along the feed direction X, they include a first part 11, a second part 12, a third part 13, a fourth part 21, a fifth part 22, and a sixth part 23 that are sequentially connected, and the first part 11 is close to the material seat 3 along the feed direction X.

[0110] When the process of the wafer 2 moving is in the first deceleration sub-stage, along the axis direction of the silicon rod, the orthographic projection of the cutting wire 8 in the plane perpendicular to the axis direction of the silicon rod is located within the orthographic projection of the fourth part 21 in the plane perpendicular to the axis direction of the silicon rod;

[0111] When the process of the wafer 2 moving is in the second deceleration sub-stage, along the axis direction of the silicon rod, the orthographic projection of the cutting wire 8 in the plane perpendicular to the axis direction of the silicon rod is located within the orthographic projection of the fifth part 22 in the plane perpendicular to the axis direction of the silicon rod.

[0112] In some embodiments, within the first deceleration sub-stage, the control wafer 2 moves relative to the cutting wire 8 along the feed direction X at a first feed speed at a constant speed.

[0113] In some embodiments, within the second deceleration sub-stage, the control wafer 2 moves relative to the cutting wire 8 along the feed direction X at a sixth feed speed at a constant speed.

[0114] In the above embodiments, by further dividing the deceleration stage into a first deceleration sub-stage and a second deceleration sub-stage, the change of the feed speed in the deceleration stage is made smoother, so that the feed speed is reduced to the sixth feed speed within the second deceleration sub-stage, to avoid the possibility of unstable phenomena caused by the rapid reduction of the feed speed from the first feed speed to the second feed speed, thereby improving the yield.

[0115] In some embodiments, referring to Figure 1 and Figure 6 , the acceleration stage includes a first acceleration sub-stage and a second acceleration sub-stage after the first acceleration sub-stage; within the first acceleration sub-stage, the wafer 2 is controlled to move relative to the cutting wire 8 along the feed direction X at a third feed speed; within the second acceleration sub-stage, the wafer 2 is controlled to move relative to the cutting wire 8 along the feed direction X at a fourth feed speed; wherein, the wafer 2 has a maximum dimension D along the feed direction X; within the second acceleration sub-stage, the feed distance of the wafer 2 moving relative to the cutting wire 8 along the feed direction X is l 13 , satisfying: 0.37D ≤ l 13 ≤ 0.44D.

[0116] In some embodiments, the second acceleration sub-stage starts immediately after the end of the first acceleration sub-stage; in other embodiments, there is an interval between the first acceleration sub-stage and the second acceleration sub-stage.

[0117] For the sake of convenience of description, referring to Figure 3 , in some embodiments, after the wafer 2 and the resin plate 1 are connected, along the feed direction X, they include a first part 11, a second part 12, a third part 13, a fourth part 21, a fifth part 22 and a sixth part 23 that are connected in sequence, and the first part 11 is close to the stock seat 3 along the feed direction X.

[0118] The feed distance of the first acceleration sub-stage corresponds to the length from L1 to L2, that is, the feed distance of the first acceleration sub-stage is the difference between L2 and L1.

[0119] The feed distance of the second acceleration sub-stage corresponds to the length from L2 to L3, that is, the feed distance of the second acceleration sub-stage is the difference between L3 and L2.

[0120] When the process of the wafer 2 moving is in the first acceleration sub-stage, along the axis direction of the silicon rod, the positive projection of the cutting wire 8 in the plane perpendicular to the axis direction of the silicon rod is located within the positive projection of the second part 12 in the plane perpendicular to the axis direction of the silicon rod;

[0121] When the process of the wafer 2 moving is in the second acceleration sub-stage, along the axis direction of the silicon rod, the positive projection of the cutting wire 8 in the plane perpendicular to the axis direction of the silicon rod is located within the positive projection of the third part 13 in the plane perpendicular to the axis direction of the silicon rod.

[0122] In some embodiments, within the first acceleration sub-stage, the wafer 2 is controlled to move relative to the cutting wire 8 along the feed direction X at a third feed speed uniformly.

[0123] In some embodiments, within the second acceleration sub-stage, the wafer 2 is controlled to move relative to the cutting wire 8 along the feed direction X at a fourth feed speed uniformly.

[0124] Specifically, the value of l 13 can be any one of 0.37D, 0.38D, 0.39D, 0.4D, 0.41D, 0.42D, 0.43D, 0.44D or any value within the range between any two of these values.

[0125] When the value of l 13 is larger, the proportion of the second acceleration sub-phase in the entire movement process of the wafer 2 is larger. Since the feed rate in the second acceleration sub-phase is the relatively high fourth feed rate, the time for the entire movement process of the wafer 2 can be shortened, and the efficiency of lifting the material can be improved; when the value of l 13 is smaller, the time for maintaining the relatively high fourth feed rate is shorter, and the movement process of the wafer 2 is relatively stable; when the value of l 13 is within the range defined in the embodiments of the present application, both the efficiency of lifting the material can be improved and the stability of the movement process of the wafer 2 can be ensured.

[0126] In the above embodiments, the first acceleration sub-phase is used to enable the feed rate to increase relatively smoothly from the fifth feed rate to the fourth feed rate, making the movement process of the wafer 2 more stable and reducing the possibility of wire hanging. The second acceleration sub-phase enables the wafer 2 and the cutting wire 8 to move relative to each other along the feed direction X at a relatively high fourth feed rate, thereby increasing the average feed rate of the entire movement process of the wafer 2, and further reducing the time consumed in the movement process of the wafer 2 and improving the efficiency of lifting the material.

[0127] In some embodiments, referring to Figure 2 , the cutting wire 8 has a linear velocity; during the movement of the wafer 2, the linear velocity of the cutting wire 8 decreases from the first linear velocity to the second linear velocity; wherein, the material lifting further includes a starting phase, and the starting phase and the deceleration phase are carried out in sequence; at the end of the starting phase, the cutting wire 8 is separated from the resin plate 1; in the starting phase, the linear velocity of the cutting wire 8 decreases from the first linear velocity to the second linear velocity.

[0128] Wherein, the movement process of the wafer 2 refers to the wafer 2 moving relative to the cutting wire 8 along the feed direction, and the distance between the cutting wire 8 and the resin plate 1 along the feed direction X increases.

[0129] Wherein, Figure 2 the vertical axis in is the linear velocity of the cutting wire 8 along the extending direction, and the horizontal axis is the feed distance of the wafer 2 along the feed direction X relative to the cutting wire 8.

[0130] Wherein, Figure 2 v1 on the vertical axis in corresponds to the first linear velocity, that is, the value of the first feed velocity is v1;

[0131] Figure 2 v2 on the vertical axis in corresponds to the second linear velocity, that is, the value of the first linear velocity is v2.

[0132] For ease of explanation, please refer to Figure 3 , in some embodiments, after the silicon wafer 2 and the resin plate 1 are connected, they include a first part 11, a second part 12, a third part 13, a fourth part 21, a fifth part 22, and a sixth part 23 that are sequentially connected along the feeding direction X, and the first part 11 is close to the material seat 3 along the feeding direction X.

[0133] Among them, when the process of moving the silicon wafer 2 is in the starting stage, along the axis direction of the silicon rod, that is Figure 3 the direction perpendicular to the attached drawing in , the positive projection of the cutting line 8 in the plane perpendicular to the axis direction of the silicon rod is located within the positive projection of the first part 11 in the plane perpendicular to the axis direction of the silicon rod.

[0134] Specifically, the linear velocity of the cutting line 8 is the speed at which the cutting line 8 moves along its extending direction.

[0135] Specifically, the first linear velocity is greater than the second linear velocity.

[0136] Specifically, during the process of moving the silicon wafer 2, it first enters the starting stage and then enters the deceleration stage.

[0137] In some embodiments, within the acceleration stage and the deceleration stage, the linear velocity of the cutting line 8 is the second linear velocity.

[0138] As can be seen from the foregoing, during the starting stage, the cutting line 8 contacts the resin plate 1.

[0139] In the above embodiments, within the starting stage, the cutting line 8 can work at a relatively high first linear velocity to obtain a relatively large cutting force, and can polish the first groove 14 of the resin plate 1, so that the first groove 14 can have a sufficient gap for the cutting line 8 to pass through, thereby reducing the possibility of wire hanging.

[0140] In some embodiments, please refer to Figure 3 , in the starting stage, the feeding distance l of the silicon wafer 2 moving relative to the cutting line 8 along the feeding direction X 11 , the resin plate 1 has a first groove 14 and a second groove 15, the first groove 14 and the second groove 15 are communicated, the silicon wafer 2 is arranged in the second groove 15, the first groove 14 has a maximum dimension H1 along the feeding direction X, the second groove 15 has a maximum dimension H2 along the feeding direction X, and it satisfies: l 11 ≤H1 - H2.

[0141] Specifically, as can be seen from the foregoing, the first groove 14 is formed by the cutting line 8 cutting the resin plate 1 when cutting the silicon rod.

[0142] In the above embodiments, by limiting l 11The relationship between and H1-H2 is such that at the end of the starting stage, the cutting line 8 has not yet or has just come into contact with the silicon wafer 2, reducing the possibility that the cutting line 8 comes into contact with the silicon wafer 2 when it has a relatively large cutting force, which may cause scratches on the silicon wafer 2, thereby improving the yield of the silicon wafer 2.

[0143] In some embodiments, the portion of the cutting line 8 that comes into contact with the silicon wafer 2 during material lifting is at least part of the portion of the cutting line 8 that comes into contact with the silicon rod during cutting of the silicon rod.

[0144] Specifically, the old wire of the cutting line 8 is used during the movement of the silicon wafer 2, that is, only the old wire portion of the cutting line 8 comes into contact with the resin plate 1 and the silicon wafer 2 during the movement of the silicon wafer 2. The old wire is the portion of the cutting line 8 used during cutting of the silicon wafer 2 and the resin plate 1.

[0145] It can be understood that since the old wire portion has been used during cutting of the silicon rod and the resin plate 1, the cutting force of the old wire portion is reduced compared to the unused new wire portion.

[0146] In the above embodiments, by defining that the old wire portion of the cutting line 8 is used for material lifting, the possibility of the cutting line 8 scratching the silicon wafer 2 is reduced, thereby improving the yield of material lifting.

[0147] In some embodiments, a first cutting fluid 5 is injected into the gap of the resin plate 1 using the nozzle 4. The landing point of the first cutting fluid 5 is on the side of the silicon wafer 2 closer to the resin plate 1 along the feed direction X. The nozzle 4 has a pressure P and a first flow rate Q, satisfying: 0.03 bar ≤ P ≤ 20 bar, 2.5 L / min ≤ Q ≤ 15.5 L / min.

[0148] In some embodiments, the cutting device has a pressure gauge and a first flow meter connected to the nozzle 4, and the values of the pressure P and the first flow rate Q can be obtained by reading the values of the pressure gauge and the first flow meter.

[0149] Specifically, the value of P can be any one of 0.03 bar, 0.08 bar, 0.13 bar, 0.18 bar, 0.23 bar, 0.28 bar, 0.33 bar, 0.38 bar, 0.43 bar, 0.48 bar, 0.53 bar, 0.58 bar, 0.63 bar, 0.68 bar, 0.73 bar, 0.78 bar, 0.83 bar, 0.88 bar, 0.93 bar, 0.98 bar, 1 bar, 1 bar, 2 bar, 3 bar, 4 bar, 5 bar, 6 bar, 7 bar, 8 bar, 9 bar, 10 bar, 11 bar, 12 bar, 13 bar, 14 bar, 15 bar, 16 bar, 17 bar, 18 bar, 19 bar, 20 bar or any value within the range between any two of these values.

[0150] When the value of P is larger, the first cutting fluid 5 is more likely to enter the first tank 14 and the third tank 16, reducing the friction of the cutting wire 8 in the feeding direction X, and also being able to maintain the gap between the silicon wafers 2, thereby reducing the possibility of the silicon wafers 2 being scratched and having a higher yield during material lifting; when the value of P is smaller, the energy consumption during the supply of the first cutting fluid 5 is smaller; when the value of P is within the range defined in the embodiments of the present application, it can not only ensure the yield during material lifting, but also reduce the loss during the direct supply of the first cutting fluid 5 or the energy consumption during the circulating supply.

[0151] Specifically, the value of Q can be any one of 2.5 L / min, 3 L / min, 3.5 L / min, 4 L / min, 4.5 L / min, 5 L / min, 5.5 L / min, 6 L / min, 6.5 L / min, 7 L / min, 7.5 L / min, 8 L / min, 8.5 L / min, 9 L / min, 9.5 L / min, 10 L / min, 10.5 L / min, 11 L / min, 11.5 L / min, 12 L / min, 12.5 L / min, 13 L / min, 13.5 L / min, 14 L / min, 14.5 L / min, 15 L / min, 15.5 L / min or any value within the range between any two of them.

[0152] When the value of Q is larger, more of the first cutting fluid 5 enters the gap between the silicon wafers 2, and the gap between the silicon wafers 2 is more easily maintained, thereby reducing the possibility of the silicon wafers 2 being scratched and having a higher yield during material lifting; when the value of Q is smaller, the loss during the direct supply of the first cutting fluid 5 is smaller and the energy consumption during the circulating supply is smaller; when Q is within the range defined in the embodiments of the present application, it can not only ensure the yield during material lifting, but also reduce the loss during the direct supply of the first cutting fluid 5 or the energy consumption during the circulating supply.

[0153] In the above embodiments, by limiting the pressure P of the nozzle 4 and the first flow rate Q, sufficient first cutting fluid 5 can more easily enter the gap between the silicon wafers 2, reducing the friction between the cutting wire 8 and the silicon wafers 2 in the feeding direction X, and also being able to maintain the gap between the silicon wafers 2, thereby reducing the possibility of the silicon wafers 2 being scratched. At the same time, it can also reduce the loss during the direct supply of the first cutting fluid 5 or the energy consumption during the circulating supply of the first cutting fluid 5.

[0154] In some embodiments, a nozzle 6 is used to inject the second cutting fluid 7 towards the cutting wire 8 so that the cutting wire 8 can bring the second cutting fluid 7 into the gap between adjacent silicon wafers 2. The nozzle 6 has a second flow rate q, satisfying: 20 L / min < q < 200 L / min.

[0155] In some embodiments, the cutting device has a second flowmeter connected to the nozzle 6, and the value of the second flow rate q can be obtained by reading the value of the second flowmeter.

[0156] Specifically, the value of q can be any one of 20 L / min, 30 L / min, 40 L / min, 50 L / min, 60 L / min, 70 L / min, 80 L / min, 90 L / min, 100 L / min, 110 L / min, 120 L / min, 130 L / min, 140 L / min, 150 L / min, 160 L / min, 170 L / min, 180 L / min, 190 L / min, 200 L / min or any value within the range between any two of these values.

[0157] When the value of q is larger, the cutting wire 8 can bring enough second cutting fluid 7 between adjacent silicon wafers 2, reducing the friction force along the extending direction of the cutting wire 8 and reducing the possibility of wire breakage and wire coiling; when the value of q is smaller, the loss during direct supply of the second cutting fluid 7 or the energy consumption during cyclic supply can be reduced; when the value of q is within the range defined in the embodiments of the present application, both the possibility of wire breakage and wire coiling of the cutting wire 8 can be reduced, and the loss during direct supply of the second cutting fluid 7 or the energy consumption during cyclic supply of the second cutting fluid 7 can also be reduced.

[0158] In the above embodiments, by limiting the value of the second flow rate q, the loss during direct supply of the second cutting fluid 7 or the energy consumption during cyclic supply of the second cutting fluid 7 is reduced while reducing the possibility of wire breakage and wire coiling of the cutting wire 8.

[0159] In some embodiments, the silicon material processing method further includes a cutting stage. In the cutting stage, the silicon rod moves relative to the cutting wire 8 in a direction opposite to the feeding direction X so that the cutting wire 8 cuts the silicon rod into silicon wafers 2. In some embodiments, the cutting stage is before the starting stage.

[0160] Among them, the cutting stage is used to cut the silicon rod into silicon wafers 2, and the starting stage, acceleration stage and deceleration stage are used to separate the cutting wire 8 from the silicon wafers 2.

[0161] Specifically, the feeding speed of the silicon wafer 2 relative to the cutting wire 8 in the feeding direction X can be measured by the following method:

[0162] 1. Measure and record the maximum distance h1 between the groove wall of the first groove 14 and the cutting wire 8 in the feeding direction X;

[0163] 2. Control the silicon wafer 2 to move relative to the cutting wire 8 in the feeding direction X and record the time;

[0164] 3. Control the silicon wafer 2 to remain relatively stationary with the cutting wire 8 and read the time T;

[0165] 4. Measure and record the maximum distance h2 between the groove wall of the first groove 14 and the cutting line 8 along the feeding direction.

[0166] 5. Feeding speed V = (h2 - h1) / T.

[0167] The feeding speed of the silicon wafer 2 relative to the cutting line 8 along the feeding direction X can also be obtained by reading the parameters of the cutting device.

[0168] It can be understood that due to the performance limitations of the cutting equipment, the change in the feeding speed between each stage is not completed instantaneously. Therefore, in some embodiments, there are also inclined line segments in the schematic diagram of the feeding speed - feeding distance relationship.

[0169] Specifically, the linear speed of the cutting line 8 can be measured by the following method:

[0170] 1. Make a first marking point on the cutting line 8 and record the position of the first marking point relative to the cutting device as the first position.

[0171] 2. Start the material lifting program and time it.

[0172] 3. Stop the material lifting program and stop timing, and record the time t.

[0173] 4. Record a second marking point at the first position.

[0174] 5. Remove and straighten the cutting line 8, and measure the length h3 between the first marking point and the second marking point along the extension direction of the cutting line.

[0175] 6. Linear speed v = h3 / t.

[0176] The linear speed of the cutting line 8 can also be obtained by reading the parameters of the cutting device.

[0177] It can be understood that due to the performance limitations of the cutting equipment, the change in the linear speed between each stage is not completed instantaneously. Therefore, in some embodiments, there are also inclined line segments in the schematic diagram of the linear speed - feeding distance relationship.

[0178] In some embodiments, the third feeding speed V3 satisfies: 10 mm / min ≤ V3 ≤ 20 mm / min.

[0179] Specifically, the value of V3 can be any one of 10 mm / min, 11 mm / min, 12 mm / min, 13 mm / min, 14 mm / min, 15 mm / min, 16 mm / min, 17 mm / min, 18 mm / min, 19 mm / min, 20 mm / min or any value within the range between any two of them.

[0180] The larger the value of V3, the less time consumed in the first acceleration sub-stage, and the higher the efficiency of the silicon material processing process; the smaller the value of V3, the more stable the first acceleration sub-stage, and the higher the yield of the silicon material processing process; when the value of V3 is within the range defined by the embodiments of the present application, the efficiency of the silicon material processing process is relatively high, and the yield is also relatively high.

[0181] In some embodiments, the first feed rate V1 satisfies: 20 mm / min ≤ V1 ≤ 40 mm / min.

[0182] Specifically, the value of V1 can be any value among 20 mm / min, 21 mm / min, 22 mm / min, 23 mm / min, 24 mm / min, 25 mm / min, 26 mm / min, 27 mm / min, 28 mm / min, 29 mm / min, 30 mm / min, 31 mm / min, 32 mm / min, 33 mm / min, 34 mm / min, 35 mm / min, 36 mm / min, 37 mm / min, 38 mm / min, 39 mm / min, 40 mm / min or any value within the range between any two of these values.

[0183] The larger the value of V1, the less time consumed in the first deceleration sub-stage, and the higher the efficiency of the silicon material processing process; the smaller the value of V1, the more stable the first deceleration sub-stage, the better the effect of the cutting wire 8 on polishing the resin plate 1, and the less likely the wire hanging phenomenon occurs, and the higher the yield of the silicon material processing process; when the value of V1 is within the range defined by the embodiments of the present application, the efficiency of the silicon material processing process is relatively high, and the yield is also relatively high.

[0184] In some embodiments, the sixth feed rate V6 satisfies: 10 mm / min ≤ V6 ≤ 20 mm / min.

[0185] Specifically, the value of V6 can be any value among 10 mm / min, 11 mm / min, 12 mm / min, 13 mm / min, 14 mm / min, 15 mm / min, 16 mm / min, 17 mm / min, 18 mm / min, 19 mm / min, 20 mm / min or any value within the range between any two of these values.

[0186] The larger the value of V6, the less time consumed in the second deceleration sub-stage, and the higher the efficiency of the silicon material processing process; the smaller the value of V6, the more stable the second deceleration sub-stage, and the higher the yield of the silicon material processing process; when the value of V6 is within the range defined by the embodiments of the present application, the efficiency of the silicon material processing process is relatively high, and the yield is also relatively high.

[0187] In some embodiments, in the first acceleration sub-stage, the feeding distance by which the silicon wafer 2 moves relative to the cutting line 8 along the feeding direction X is l 12 , satisfying: 0.05D ≤ l 12 ≤ 0.1D.

[0188] Specifically, the value of l 12 can be any value among 0.05D, 0.06D, 0.07D, 0.08D, 0.09D, 0.1D or any value within the range between any two of these values.

[0189] When the value of l 12 is larger, the acceleration at which the feeding speed increases from the fifth feeding speed to the fourth feeding speed is smaller, the acceleration process is more stable, and the yield of the silicon material movement process is higher; when the value of l 12 is smaller, the time consumed in the first acceleration sub-stage is less, and the efficiency of the silicon material processing process is higher; when the value of l 12 is within the range defined in the embodiments of the present application, the efficiency of the silicon material processing process is relatively high, and the yield is also relatively high.

[0190] In some embodiments, in the first deceleration sub-stage, the feeding distance by which the silicon wafer 2 moves relative to the cutting line 8 along the feeding direction X is l 21 , satisfying: 0.2D ≤ l 21 ≤ 0.25D.

[0191] Specifically, the value of l 21 can be any value among 0.2D, 0.21D, 0.22D, 0.23D, 0.24D, 0.25D or any value within the range between any two of these values.

[0192] When the value of l 21 is larger, the time consumed in the deceleration stage is less, and the efficiency of the silicon material processing process is higher; when the value of l 21 is smaller, the average feeding speed in the deceleration stage is slower, the deceleration stage is more stable, and the yield of the silicon material processing process is higher; when the value of l 21 is within the range defined in the embodiments of the present application, the efficiency of the silicon material processing process is relatively high, and the yield is also relatively high.

[0193] In some embodiments, in the second deceleration sub-stage, the feeding distance by which the silicon wafer 2 moves relative to the cutting line 8 along the feeding direction X is l 22 , satisfying: 0.15D ≤ l 22 ≤ 0.2D.

[0194] Specifically, the value of l 22 can be any value among 0.15D, 0.16D, 0.17D, 0.18D, 0.19D, 0.2D or any value within the range between any two of these values. When l22 The larger the value, the smaller the acceleration of the first feed speed decreasing to the second feed speed, the more stable the deceleration process, and the higher the yield rate during the movement of the silicon material; when l 22 The smaller the value, the less time consumed in the second deceleration sub-stage, and the higher the efficiency of the silicon material processing process; when l 22 When the value is within the range defined in the embodiments of the present application, the efficiency of the silicon material processing process is relatively high, and the yield rate is also relatively high.

[0195] The following describes the technical solutions provided in the embodiments of the present application with reference to specific embodiments.

[0196] Embodiment 1

[0197] Please refer to Figure 7 , start the cutting device, control the silicon wafer 2 to move relative to the cutting line 8 along the feed direction X at the first feed speed, and reduce the first feed speed to the second feed speed until the cutting line 8 is separated from the silicon wafer 2, and then turn off the cutting device.

[0198] Embodiment 2

[0199] Please refer to Figure 5 , start the cutting device, control the silicon wafer 2 to move relative to the cutting line 8 along the feed direction X at the fifth feed speed; control the silicon wafer 2 to move relative to the cutting line 8 along the feed direction X at the third feed speed and accelerate to the fourth feed speed; control the silicon wafer 2 to move relative to the cutting line 8 along the feed direction X at the first feed speed, and reduce the first feed speed to the second feed speed until the cutting line 8 is separated from the silicon wafer 2, and then turn off the cutting device.

[0200] Embodiment 3

[0201] Please refer to Figure 6 , start the cutting device, control the silicon wafer 2 to move relative to the cutting line 8 along the feed direction X at the fifth feed speed; control the silicon wafer 2 to continue to move relative to the cutting line 8 along the feed direction X at the third feed speed; control the silicon wafer to continue to move relative to the cutting line along the feed direction X at the fourth feed speed; control the silicon wafer 2 to continue to move relative to the cutting line 8 along the feed direction X at the first feed speed; control the silicon wafer 2 to continue to move relative to the cutting line 8 along the feed direction X at the second feed speed until the cutting line 8 is separated from the silicon wafer 2, and then turn off the cutting device.

[0202] Correspondingly, the present application further provides a silicon wafer 2 obtained by using the silicon material processing method according to any one of the above embodiments.

[0203] The above has introduced in detail a silicon material processing method and silicon wafers provided by the embodiments of the present application. Specific examples are used in the present application to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A silicon material processing method, characterized in that, The silicon material processing method includes: Controlling the silicon wafer (2) to move relative to the cutting wire (8) along the feeding direction (X) at a feeding speed until the silicon wafer (2) is separated from the cutting wire (8); The process of the silicon wafer (2) moving includes a deceleration stage; Wherein, the feeding speed in the deceleration stage is reduced from a first feeding speed to a second feeding speed.

2. The silicon material processing method according to claim 1, characterized in that The process of the silicon wafer (2) moving further includes an acceleration stage, and the acceleration stage is before the deceleration stage; Wherein, the feeding speed in the acceleration stage is increased from a third feeding speed to a fourth feeding speed.

3. The silicon material processing method according to claim 1, wherein The process of the silicon wafer (2) moving further includes a starting stage, and the starting stage is before the deceleration stage; in the starting stage, controlling the silicon wafer (2) to move relative to the cutting wire (8) along the feeding direction (X) at a fifth feeding speed, and the fifth feeding speed is less than the first feeding speed; when the starting stage ends, the cutting wire (8) is separated from the resin plate (1).

4. The silicon material processing method according to claim 1, wherein The silicon wafer (2) has a maximum dimension D along the feeding direction (X); in the deceleration stage, the feeding distance of the silicon wafer (2) moving relative to the cutting wire (8) along the feeding direction (X) is l2, satisfying: 0.5D ≤ l2 ≤ 0.58D.

5. The silicon material processing method according to claim 1, characterized in that, The deceleration stage includes a knife - retracting sub - stage; in the knife - retracting sub - stage, controlling the silicon wafer (2) to move relative to the cutting wire (8) along the feeding direction (X) at the second feeding speed.

6. The silicon material processing method according to claim 5, wherein, The silicon wafer (2) has a maximum dimension D along the feed direction (X); in the knife retraction stage, the feed distance by which the silicon wafer (2) moves relative to the cutting line (8) along the feed direction (X) is l 23 , satisfying: 0.05D ≤ l 23 ≤ 0.15D.

7. The silicon material processing method according to claim 1, characterized in that The second feeding speed V2 satisfies: 3 mm / min ≤ V2 ≤ 10 mm / min.

8. The silicon material processing method according to claim 3, wherein The fifth feeding speed V5 satisfies: 1 mm / min ≤ V5 ≤ 10 mm / min.

9. The silicon material processing method according to claim 2, characterized in that, The fourth feeding speed V4 satisfies: 40 mm / min ≤ V4 ≤ 60 mm / min.

10. The silicon material processing method according to claim 1, characterized in that, The deceleration stage includes a first deceleration sub - stage and a second deceleration sub - stage after the first deceleration sub - stage; within the first deceleration sub - stage, controlling the silicon wafer (2) to move relative to the cutting wire (8) along the feeding direction (X) at the first feeding speed; within the second deceleration sub - stage, controlling the silicon wafer (2) to move relative to the cutting wire (8) along the feeding direction (X) at a sixth feeding speed, the sixth feeding speed is less than the first feeding speed and greater than the second feeding speed.

11. The silicon material processing method according to claim 2, characterized in that, The acceleration stage includes a first acceleration sub-stage and a second acceleration sub-stage following the first acceleration sub-stage; within the first acceleration sub-stage, the wafer (2) is controlled to move relative to the cutting wire (8) along the feed direction (X) at the third feed speed; within the second acceleration sub-stage, the wafer (2) is controlled to move relative to the cutting wire (8) along the feed direction (X) at the fourth feed speed; wherein, the wafer (2) has a maximum dimension D along the feed direction (X); within the second acceleration sub-stage, the feed distance of the wafer (2) moving relative to the cutting wire (8) along the feed direction (X) is l 13 , satisfying: 0.37D ≤ l 13 ≤ 0.44D.

12. The silicon material processing method according to claim 1, characterized in that, The cutting wire (8) has a linear speed; during the movement of the silicon wafer (2), the linear speed of the cutting wire (8) is reduced from a first linear speed to a second linear speed; Wherein, the process of the silicon wafer (2) moving further includes a starting stage, and the starting stage is after the deceleration stage; when the starting stage ends, the cutting wire (8) is separated from the resin plate (1); in the starting stage, the linear speed of the cutting wire (8) is reduced from the first linear speed to the second linear speed.

13. The silicon material processing method according to claim 3 or 12, characterized in that, In the starting stage, the feeding distance l of the silicon wafer (2) moving relative to the cutting wire (8) along the feeding direction (X) 11 , the resin plate (1) has a first groove (14) and a second groove (15), the first groove (14) and the second groove (15) communicate with each other, the silicon wafer (2) is arranged in the second groove (15), the first groove (14) has a maximum dimension H1 along the feeding direction (X), the second groove (15) has a maximum dimension H2 along the feeding direction (X), and it satisfies: l 11 ≤H1 - H2.

14. The silicon material processing method according to claim 1, characterized in that, The part of the cutting wire (8) in contact with the silicon wafer (2) during material lifting is at least part of the part of the cutting wire (8) in contact with the silicon rod during silicon rod cutting.

15. The silicon material processing method according to claim 1, characterized in that, Inject the first cutting fluid (5) into the gap of the resin plate (1) using a spray head (4), and the landing point of the first cutting fluid (5) is located on the side of the silicon wafer (2) close to the resin plate (1) along the feeding direction (X). The spray head (4) has a pressure P and a first flow rate Q, satisfying: 0.03 bar ≤ P ≤ 20 bar, 2.5 L / min ≤ Q ≤ 15.5 L / min.

16. The silicon material processing method according to claim 1, wherein Use a nozzle (6) to shoot the second cutting fluid (7) towards the cutting wire (8) so that the cutting wire (8) can bring the second cutting fluid (7) into the gap between adjacent silicon wafers (2). The nozzle (6) has a second flow rate q, satisfying: 20 L / min < q < 200 L / min.

17. A silicon wafer, characterized in that, Obtained by using the silicon material processing method according to any one of claims 1 to 16.

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