Wafer coating device and control method thereof

Abstract

The invention relates to a wafer coating device and a control method thereof. Comprising a coating chamber; the clamping assembly is used for clamping the wafer, driving the wafer to be immersed into the coating liquid in a manner of inclining at a preset angle, and driving the wafer to enter a horizontal state after the wafer is immersed into the coating liquid; a liquid supply assembly; comprising a first liquid supply part and a second liquid supply part which are located below the clamping assembly, and the first liquid supply part comprises a first liquid supply opening which supplies liquid in the first direction extending inwards in the circumferential side of the coating cavity; the second liquid supply part comprises a second liquid supply port for supplying liquid in a second direction extending upwards along the bottom end of the coating chamber; the control component is used for controlling the clamping assembly and the liquid supply assembly; in the process of immersing the wafer into the coating liquid, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be a first preset flow rate and a second preset flow rate respectively; and after the wafer enters the horizontal state, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be first preset flow rates. According to the technical scheme, the coating quality can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and particularly to a wafer coating device and a control method thereof. Background Art

[0002] A wafer refers to a silicon wafer used for fabricating silicon semiconductor integrated circuits. Its raw material is silicon, and due to its circular shape, it is called a wafer or silicon wafer. During the production process, an electroplating process needs to be performed on the wafer, that is, a layer of conductive metal is electroplated on the wafer, and subsequent processing will be carried out on the conductive metal layer to form conductive circuits. As the basic material of a chip, the requirements for the electroplated coating on the wafer are extremely high, so the process requirements are also high. When electroplating a wafer, the uniformity of the coating must be ensured to guarantee the quality of the wafer.

[0003] Currently, wafer electroplating equipment is mainly divided into two types according to the positions of the anode and cathode. One is a vertical electroplating device, and the other is a horizontal electroplating device. For the horizontal electroplating device, during electroplating, the wafer is placed horizontally with the surface to be electroplated facing downwards. This facilitates the loading and unloading of the wafer, and since each part of the surface to be electroplated of the wafer is at the same depth in the plating solution and the pressure at each part is the same, compared with the vertical electroplating device, it can have better electroplating uniformity. However, the component of the wafer fixture that holds the wafer protrudes from the bottom plane of the wafer, forming a corner. During the process of the wafer gradually immersing into the electroplating solution, some gas accumulates at the corner and cannot be discharged, forming bubbles on the bottom plane of the wafer, which affects the electroplating quality. Summary of the Invention

[0004] In view of this, to solve at least one problem in the background art, this application provides a wafer coating device and a control method thereof.

[0005] To achieve the above object, the technical solution of this application is realized as follows: In a first aspect, an embodiment of this application provides a wafer coating device, including: A coating chamber for containing a coating solution; A clamping assembly configured to clamp a wafer and drive the wafer to immerse in the coating solution in a manner of tilting at a preset angle, and drive the wafer into a horizontal state after the wafer is immersed in the coating solution; A liquid supply assembly for adding coating solution into the coating chamber; including a first liquid supply member and a second liquid supply member located below the clamping assembly. The first liquid supply member includes a first liquid supply port for supplying liquid in a first direction extending inwards along the circumference of the coating chamber; the second liquid supply member includes a second liquid supply port for supplying liquid in a second direction extending upwards from the bottom end of the coating chamber; A control component for controlling the clamping assembly; The control component is further configured to control the liquid supply assembly; during the process of immersing the wafer into the coating liquid, control the liquid flow rates of the first liquid supply port and the second liquid supply port to be a first preset flow rate and a second preset flow rate respectively; after the wafer enters the horizontal state, control the liquid flow rates of the first liquid supply port and the second liquid supply port to be both the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0006] Combined with the first aspect of the present application, in an alternative embodiment, the clamping assembly is further controlled such that the movement of the wafer immersed in the coating liquid is a uniform descending movement or a uniformly accelerated descending movement; the speed of the descending movement of the wafer before entering the horizontal state is 45 mm / s - 150 mm / s.

[0007] Combined with the first aspect of the present application, in an alternative embodiment, the clamping assembly includes a supporting portion that supports the wafer from the bottom of the wafer, and the side wall of the supporting portion is provided with a guiding inclined surface that forms an obtuse angle with the lower surface of the wafer to facilitate the discharge of gas along the guiding inclined surface; the angle of the obtuse angle is 95° - 150°.

[0008] Combined with the first aspect of the present application, in an alternative embodiment, the thickness of the supporting portion is 0.8 mm - 1.2 mm.

[0009] Combined with the first aspect of the present application, in an alternative embodiment, the ratio of the second preset flow rate to the first preset flow rate is 2 - 4.

[0010] Combined with the first aspect of the present application, in an alternative embodiment, the liquid outlet direction of the second liquid supply port is inclined toward one side in the vertical direction, and the inclination direction is the same as the inclination direction when the wafer is placed in the coating chamber.

[0011] Combined with the first aspect of the present application, in an alternative embodiment, the first liquid supply member further includes a liquid outlet guiding member, and there is no overlap between the orthographic projection of the wafer and the liquid outlet guiding member.

[0012] In a second aspect, an embodiment of the present application provides a control method for a wafer coating device as described above, and the method includes: Controlling the clamping assembly to drive the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and entering the horizontal state after the wafer is immersed in the coating liquid; During the process of immersing the wafer into the coating liquid, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be a first preset flow rate and a second preset flow rate respectively; after the wafer enters the horizontal state, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be both the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0013] In combination with the second aspect of the present application, in an alternative embodiment, controlling the clamping assembly to drive the wafer to be immersed in the coating liquid at a preset angle and enter a horizontal state after the wafer is submerged in the coating liquid includes: Controlling the clamping assembly such that the movement of the wafer into the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the speed of the downward movement of the wafer before entering the horizontal state is 45 mm / s - 150 mm / s.

[0014] In combination with the first aspect of the present application, in an alternative embodiment, the ratio of the second preset flow rate to the first preset flow rate is 2 - 4.

[0015] The wafer coating device and its control method provided by the embodiments of the present application, by providing a first liquid supply port for supplying liquid in the first direction and a second liquid supply port for supplying liquid in the second direction, and during the process of the wafer changing from not being immersed in the coating liquid to gradually being immersed in the coating liquid, the first liquid supply port can supply liquid at a first preset flow rate, and the second liquid supply port can supply liquid at a second preset flow rate greater than the first preset flow rate to generate an upward flow field, and supply liquid towards the corner between the wafer and the clamping assembly. And because the wafer is inclined, the liquid level of the coating liquid surges towards the corner direction of the higher end, so as to push the air at the corner to move and squeeze it out, thereby preventing bubbles from forming at the corner when the wafer is completely immersed in the coating, and improving the coating quality.

[0016] Additional aspects and advantages of the present application will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings: Figure 1 is a schematic cross-sectional view of a wafer coating device provided by an embodiment of the present application; Figure 2 is a schematic diagram of a liquid supply assembly in the wafer coating device provided by an embodiment of the present application; Figure 3 is Figure 2 a top view projection schematic diagram; Figure 4 is a schematic diagram of a clamping assembly and a wafer in the wafer coating device provided by an embodiment of the present application Figure 1 ; Figure 5 is Figure 4 a partial enlarged schematic diagram at A in Figure 6Schematic diagram of the clamping assembly and the wafer in the wafer coating device provided by the embodiment of the present application Figure 2 ; Figure 7 For Figure 6 Partial enlarged schematic diagram at position B in Figure 8 Flow schematic diagram of the control method of the wafer coating device provided by the embodiment of the present application Figure 9 Structural schematic diagram of the control device of the wafer coating device provided by the embodiment of the present application Figure 10 Structural schematic diagram of the computing device provided by the embodiment of the present application

[0018] Explanation of reference numerals: 10. Coating chamber; 21. First liquid supply member; 211. First flow channel support member; 212. First liquid supply port; 213. Liquid outlet guiding member; 22. Second liquid supply member; 221. Second flow channel support member; 222. Second liquid supply port; 40. Clamping assembly; 41. Guide inclined surface; 50. Wafer; 80. Control device of the wafer coating device; 81. First control module; 82. Second control module; 90. Computing device; 91. Storage component; 92. Communication bus; 93. Processing component; 94. Input device; 95. Output device; 96. External communication interface Detailed implementation manners

[0019] In order to make the technical solutions and beneficial effects of the present application more obvious and understandable, the following will be described in detail by way of specific embodiments. Among them, the drawings are not necessarily drawn to scale, and local features can be enlarged or reduced to more clearly show the details of local features; unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which the present application belongs

[0020] In the description of the present application, the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "height", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, which is only for the convenience of the simplified description of the present application, rather than indicating that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, that is, it cannot be understood as a limitation to the present application

[0021] In this application, the terms "first" and "second" are only used for the purpose of clear description, and cannot be construed as indicating the relative importance of the indicated features or the number of indicated technical features. Therefore, the features defined with "first" and "second" can clearly include at least one such feature. In the description of this application, the meaning of "a plurality" is at least two, such as two, three, etc.; the meaning of "several" is at least one, such as one, two, three, etc., except where there are specific and clear limitations otherwise.

[0022] In this application, unless otherwise clearly defined, terms such as "installed", "connected", "joined", "fixed", "set", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and can also be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0023] In this application, unless otherwise clearly defined, a first feature being "on", "above", "over", "upon", "under", "beneath", "below", or "underneath" a second feature can be that the first feature and the second feature are in direct contact, or the first feature and the second feature are indirectly in contact through an intermediate medium. Moreover, a first feature being "above", "over", or "upon" a second feature can be that the first feature is directly above or obliquely above the second feature, or merely indicates that the horizontal height of the first feature is higher than the horizontal height of the second feature. A first feature being "under", "beneath", or "underneath" a second feature can be that the first feature is directly below or obliquely below the second feature, or merely indicates that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0024] To thoroughly understand this application, detailed steps and detailed structures will be presented in the following description to explain the technical solutions of this application. The preferred embodiments of this application are described in detail below. However, in addition to these detailed descriptions, this application can also have other implementation manners. Embodiment 1

[0025] The embodiment of this application provides a wafer coating device, referring to Figures 1 - 4 , including: A coating chamber 10 for containing a coating liquid; A clamping assembly 40 configured to clamp a wafer 50 and drive the wafer 50 to be immersed in the coating liquid in a manner of tilting at a preset angle, and drive the wafer 50 into a horizontal state after the wafer 50 is submerged in the coating liquid; The liquid supply assembly is used to add coating liquid into the coating chamber 10; it includes a first liquid supply member 21 and a second liquid supply member 22 located below the clamping assembly 40. The first liquid supply member 21 includes a first liquid supply port 212 for supplying liquid in a first direction extending inwards along the circumferential side of the coating chamber 10; the second liquid supply member 22 includes a second liquid supply port 222 for supplying liquid in a second direction extending upwards from the bottom end of the coating chamber 10. The control component is used to control the clamping assembly 40; The control component is also used to control the liquid supply assembly; during the process of the wafer 50 being immersed in the coating liquid, the liquid flow rates of the first liquid supply port 212 and the second liquid supply port 222 are controlled to be a first preset flow rate and a second preset flow rate respectively; after the wafer 50 enters the horizontal state, the liquid flow rates of the first liquid supply port 212 and the second liquid supply port 222 are both the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0026] Specifically, the coating device can be an electroplating device, and it can be understood that it can also be other coating devices.

[0027] It can be understood that during the coating process, the metal ions in the coating liquid will be continuously consumed and the concentration will also decrease as the deposition on the surface of the wafer 50 proceeds. Therefore, it is necessary to supplement the coating liquid into the coating chamber 10 through the liquid supply assembly to continuously provide metal ions for the metal deposition on the surface of the wafer 50.

[0028] It can be understood that by supplying liquid to the coating chamber 10 through the first liquid supply port 212 in the first direction at the first preset flow rate, since the first direction is the circumferential direction of the liquid supply assembly, the upward momentum and velocity of the coating liquid flowing out of several first liquid supply ports 212 are superimposed on each other to form an overall upward flow field; further, by controlling the liquid supply flow rate of the second liquid supply port 222 to be the second preset flow rate during the process of the wafer 50 being immersed in the coating liquid, and the second preset flow rate is greater than the first preset flow rate, the faster flow rate flowing out of the second liquid supply port 222 causes the coating liquid to surge upwards and superimpose on the overall upward flow field generated by the first liquid supply port 212. During the process of the wafer 50 being gradually immersed in the coating liquid in an inclined manner, the surging coating liquid will tend to move towards the corner between the wafer 50 and the clamping assembly 40 along the lower surface of the inclined wafer 50. Thus, when the wafer 50 is about to be completely immersed in the coating liquid in an inclined manner, the surging coating liquid enters the corner between the wafer 50 and the clamping assembly 40, and the higher end of the inclined wafer 50 has not yet been immersed in the coating liquid, thereby realizing that the coating liquid surging into the corner extrudes the air at the corner, preventing bubbles from being generated at the corner between the wafer 50 and the clamping assembly 40 after the wafer 50 is completely immersed in the coating liquid.

[0029] That is, the first direction is the direction extending inward from the peripheral side of the coating chamber 10. If the coating chamber 10 is circular, the first direction can be the radial direction. The second direction is the direction extending upward from the bottom end of the coating chamber 10. If the coating chamber 10 is circular, the second direction can be the axial direction.

[0030] Specifically, the second liquid supply port 222 can be arranged below the middle part of the wafer 50 to better cooperate with the first liquid supply port 212 at the edge part of the wafer 50 to form a flow field that squeezes the bubbles upward.

[0031] Furthermore, due to the existence of the edge effect during the coating process, the thickness of the coating layer at the edge part of the wafer 50 is greater than that at the middle part, resulting in uneven plating of the wafer 50. By supplying the liquid at the second preset flow rate through the second liquid supply port 222 in the middle, the coating liquid below the middle part of the wafer 50 is updated faster, and the supply of metal ions is also more sufficient, which helps to form a higher metal ion concentration in the middle part of the wafer 50, thereby promoting the coating reaction in the middle part of the wafer 50. The distribution of the current density in the middle part of the wafer 50 is relatively enhanced, and the gap between the current density in the middle part of the wafer 50 and that at the edge part is reduced, thereby avoiding the edge effect and improving the uniformity of the coating layer of the wafer 50.

[0032] It should be noted that in this embodiment, the wetting angle of the coating liquid is less than 80°. At this time, the coating liquid can spread well on the lower surface of the wafer 50, and the adhesion of the coating liquid to the lower surface of the wafer 50 is relatively strong, which further helps the coating liquid to squeeze out the gas at the corner.

[0033] In this embodiment, the wafer 50 is immersed in the coating liquid in a tilted manner at a preset angle, so that the contact area between the wafer 50 and the coating liquid gradually increases, providing more sufficient time for the air at the corner between the clamping assembly 40 and the wafer 50 to be discharged. In this embodiment, the preset angle can be 3° - 5°.

[0034] After the wafer 50 enters the horizontal state, the liquid supply flow rate of the second liquid supply port 222 resumes to the lower first preset flow rate, which can make the flow of the coating liquid in the coating chamber 10 more stable and is beneficial to improving the coating quality.

[0035] In some other embodiments of the present application, the ratio of the second preset flow rate to the first preset flow rate is 2 - 4. That is, the second preset flow rate can be 2 to 4 times the first preset flow rate. A larger flow rate difference will form a significant shear force in the coating liquid in the coating chamber 10, and the shear force can break the adhesion between the air and the wafer 50 or the clamping assembly 40, which is beneficial to the discharge of air.

[0036] Specifically, the first preset flow rate can be 0.5 m / s - 0.8 m / s; the second preset flow rate can be 1 m / s - 3.2 m / s.

[0037] In some other embodiments of the present application, the clamping assembly 40 is further controlled such that the movement of the wafer 50 immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the flow rate of the downward movement of the wafer 50 before entering the horizontal state is 45 mm / s - 120 mm / s. Preferably, the flow rate of the downward movement of the wafer 50 before entering the horizontal state is 100 mm / s. It can also be understood that the instantaneous flow rate of the wafer 50 before entering the horizontal state is 45 mm / s - 120 mm / s.

[0038] Understandably, by maintaining a sufficient flow rate of the descending wafer 50, when the wafer 50 is immersed in the coating liquid, a certain impact effect will be generated in the coating liquid in the coating chamber 10, so that the coating liquid can quickly fill the corner between the wafer 50 and the clamping assembly 40. When the rapidly descending wafer 50 is immersed in the coating liquid in the coating chamber 10, the pressure of the coating liquid increases rapidly. The rapidly increasing pressure and the coating liquid that quickly fills the corner are conducive to squeezing out the air at the corner.

[0039] In some other embodiments of the present application, the first liquid supply member 21 includes a first flow channel support member 211 surrounding the coating chamber 10 for one week, and the first liquid supply port 212 is opened on the inner side wall of the first flow channel support member 211; the second liquid supply member 22 includes a second flow channel support member 221 horizontally spanning the inner cavity of the coating chamber 10, and the second liquid supply port 222 is opened on the top wall of the second flow channel support member 221.

[0040] Through the flow channel support member, the flow rate of the liquid supply port can be made more stable. Among them, the first flow channel support member 211 surrounds the coating chamber 10 for one week, and the second flow channel support member 221 spans the inner cavity of the coating chamber 10, and neither interferes with the coating process in the coating space of the coating chamber 10. The flow channel support member is a general term for the first flow channel support member 211 and the second flow channel support member 221.

[0041] In some other embodiments of the present application, refer to Figures 5 - 7, the clamping assembly 40 includes a supporting portion that supports the wafer 50 from the bottom of the wafer 50. The side wall of the supporting portion is provided with a guiding inclined surface 41 that forms an obtuse angle with the lower surface of the wafer 50, and the angle of the obtuse angle is 95° - 150°. Through multiple tests, it is found that the guiding inclined surface 41 at this angle can further facilitate the air to be discharged along the guiding inclined surface 41. If the angle formed by the side wall of the supporting portion and the lower surface of the wafer 50 is too small, it will cause the air to easily accumulate at the corner and be difficult to discharge. If the angle formed by the side wall of the supporting portion and the lower surface of the wafer 50 is too large, the moving direction of the air is likely to change, deflect or stagnate between the wafer 50 and the supporting portion, and cannot be smoothly discharged along the guiding inclined surface 41, resulting in the coating liquid being unable to evenly cover the surface of the wafer 50. Moreover, if the angle of the guiding inclined surface 41 is too large, it will also cause the wafer 50 to be unstable.

[0042] The guiding inclined surface 41 is provided with a smooth inclined surface, which is beneficial to the movement and discharge of gas along the inclined surface. Compared with the arc surface, the processing cost of the inclined surface is lower.

[0043] In some other embodiments of the present application, the thickness of the supporting portion is 0.8 mm - 1.2 mm.

[0044] When the angle of the guiding inclined surface 41 is fixed, by reducing the thickness of the supporting portion to reduce the length of the guiding inclined surface 41, the residence time of the air on the guiding inclined surface 41 can be reduced, thereby facilitating the discharge of the air.

[0045] In some other embodiments of the present application, the liquid outlet direction of the second liquid supply port 222 is inclined in the vertical direction to one side, and the inclination direction is the same as the inclination direction when the wafer 50 is placed in the coating chamber 10, so that the liquid provided by the second liquid supply port 222 surges towards the corner directionally, so as to better drive the air at the corner to flow towards the higher end of the inclined wafer 50 for discharge.

[0046] In some other embodiments of the present application, the first liquid supply member 21 further includes a liquid outlet guiding member 213, and there is no overlap between the orthographic projection of the wafer 50 and the liquid outlet guiding member 213.

[0047] Since the second liquid supply port 222 is already facing the center of the wafer 50, the non-overlapping setting can make the liquid discharged from the first liquid supply ports 212 around the wafer 50 disperse as much as possible, drive the bubble flow more comprehensively, and is beneficial to the discharge of the bubbles.

[0048] Specifically, the liquid outlet guiding member 213 is a guiding strip extending along the radial direction of the wafer 50. The upper surface of the guiding strip is provided with a guiding groove with an arc-shaped cross-section, which is beneficial to reducing the flow resistance of the coating liquid.

[0049] In some other embodiments of the present application, the wafer coating device further includes: A first fluid valve for controlling the flow rate of the first liquid supply member 21; A second fluid valve for controlling the flow rate of the second liquid supply member 22.

[0050] That is, the flow rates of the two liquid supply members are independently controlled and there is no interference between them. Embodiment 2

[0051] The embodiment of the present application provides a control method for the wafer coating device as described in Embodiment 1. Refer to Figure 8 , the method includes: Step 601: Control the clamping assembly to drive the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and enter a horizontal state after the wafer is submerged in the coating liquid; Step 602: During the process of the wafer being immersed in the coating liquid, control the liquid supply flow rates of the first liquid supply port and the second liquid supply port to be the first preset flow rate and the second preset flow rate respectively; after the wafer enters the horizontal state, control the liquid supply flow rates of the first liquid supply port and the second liquid supply port to be both the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0052] In Step 601, being immersed in the coating liquid in a manner of tilting at a preset angle makes the contact area between the wafer 50 and the coating liquid gradually increase, providing sufficient time for the air between the clamping assembly 40 and the wafer 50 to be discharged. Moreover, when the wafer 50 is immersed in the coating liquid in a manner of tilting at a preset angle, the air between the wafer 50 and the clamping assembly 40 can flow from the lower part to the higher part along the lower surface of the tilted wafer 50, facilitating the discharge of air.

[0053] Specifically, the preset angle can be 3° - 5°.

[0054] In Step 602, when the wafer 50 is in the tilted state, set the liquid supply flow rate of the second liquid supply port 222 to the higher second preset flow rate to cause the coating liquid in the coating chamber 10 to surge. And because the wafer 50 is tilted, the surging coating liquid has a tendency to move towards the corner. When the wafer 50 is about to be completely immersed in the coating liquid, the air is driven by the coating liquid to be discharged from the higher end of the wafer 50 that has not been immersed in the coating liquid, preventing bubbles from forming at the corner between the wafer 50 and the clamping assembly 40 after the wafer 50 is completely immersed in the coating liquid.

[0055] In some other embodiments of the present application, the control of the clamping assembly 40 to drive the wafer 50 to be immersed in the coating liquid in a manner of tilting at a preset angle and enter a horizontal state after the wafer 50 is submerged in the coating liquid includes: Control the clamping assembly 40 so that the movement of the wafer 50 into the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the flow rate of the downward movement of the wafer 50 before entering the horizontal state is 45 mm / s - 150 mm / s.

[0056] Understandably, only by maintaining a sufficient downward speed can the liquid supply flow rate of the second liquid supply member 22 be coordinated to quickly expel the gas at the corners. Therefore, it is necessary to limit the speed of the downward movement. Specifically, the speed of the downward movement of the wafer 50 before entering the horizontal state can be 45 mm / s - 55 mm / s. In this way, there is sufficient movement stability and a good effect of expelling air.

[0057] In some other embodiments of the present application, the ratio of the second preset flow rate to the first preset flow rate is 2 - 4.

[0058] That is, the second preset flow rate can be 2 to 4 times the first preset flow rate. In this way, it is beneficial to discharge air.

[0059] Specifically, the first preset flow rate can be 0.5 m / s - 0.8 m / s; the second preset flow rate can be 1 m / s - 3.2 m / s. Embodiment III

[0060] The control device 80 of a wafer coating device provided by an embodiment of the present application is referred to Figure 9 , and the control device 80 of the wafer coating device includes: A first control module 81, configured to control the clamping assembly 40 to drive the wafer 50 to be immersed in the coating liquid in a manner of tilting at a preset angle, and enter the horizontal state after the wafer 50 is submerged in the coating liquid; A second control module 82, configured to control the liquid supply flow rates of the first liquid supply port 212 and the second liquid supply port 222 to be the first preset flow rate and the second preset flow rate respectively during the process of the wafer 50 being immersed in the coating liquid; after the wafer 50 enters the horizontal state, control the liquid supply flow rates of the first liquid supply port 212 and the second liquid supply port 222 to be both the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0061] In the first control module 81, being immersed in the coating liquid in a manner of tilting at a preset angle causes the bubbles to flow from the low place to the high place and concentrate towards the high place, which is beneficial to discharging the bubbles and reducing the bubbles in the coating.

[0062] Specifically, the preset angle can be 3° - 5°.

[0063] In the second control module 82, when the wafer 50 is in an inclined state, the bubbles concentrate towards the higher positions, which is conducive to the discharge of the bubbles. Therefore, by setting the liquid supply flow rate of the second liquid supply port 222 to a relatively high second preset flow rate, more bubbles can be discharged. After the wafer 50 enters the horizontal state, the liquid supply flow rate of the second liquid supply port 222 resumes to the relatively low first preset flow rate, which can make the flow of the coating liquid in the coating chamber 10 more stable and is conducive to improving the coating quality.

[0064] In some other embodiments of the present application, the first control module 81 is further configured to: control the clamping assembly 40 such that the movement of the wafer 50 immersed in the coating liquid is a uniform descending movement or a uniformly accelerated descending movement; the speed of the descending movement of the wafer 50 before entering the horizontal state is 45 mm / s - 150 mm / s.

[0065] It can be understood that only by maintaining a sufficient descending speed can the liquid supply flow rate of the second liquid supply member 22 be coordinated to quickly extrude the gas at the corners. Therefore, it is necessary to limit the speed of the descending movement. Specifically, the speed of the descending movement of the wafer 50 before entering the horizontal state can be 45 mm / s - 55 mm / s. In this way, there is sufficient movement stability and a better effect of extruding air.

[0066] In some other embodiments of the present application, in the second control module 82, the ratio of the second preset flow rate to the first preset flow rate is 2 - 4.

[0067] That is, the second preset flow rate can be 2 to 4 times the first preset flow rate. In this way, it is beneficial to discharge the air.

[0068] Specifically, the first preset flow rate can be 0.5 m / s - 0.8 m / s; the second preset flow rate can be 1 m / s - 3.2 m / s.

[0069] Each module included in this embodiment can be implemented by a processor in a computer; of course, it can also be implemented by a logic circuit in the computer. The processor can be a general-purpose processor, a digital signal processor (DSP), a field programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor can be a central processing unit (CPU), a microprocessor (MPU), or any other conventional processor.

[0070] The description of the above device embodiments is similar to the description of the above method embodiments and has similar beneficial effects to the method embodiments. For the technical details not disclosed in the device embodiments of the present application, please refer to the description of the method embodiments in the present application for understanding. Embodiment 4

[0071] An embodiment of the present application provides a computing device 90. Refer to Figure 10 , the computing device 90 includes: a storage component 91, a communication bus 92, and a processing component 93, where: The storage component 91 is used to store the control method program of the wafer coating device; The communication bus 92 is used to realize the connection and communication between the storage component 91 and the processing component 93; The processing component 93 is used to execute the control method program of the wafer coating device to implement the steps of the method as described in Embodiment 2.

[0072] For the type or structure of the storage component 91, reference can be made to the storage medium below, which will not be elaborated here.

[0073] The processing component 93 can be a general-purpose processor, a digital signal processor (DSP), a field programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor can be a central processing unit (CPU), a microprocessor (MPU), or any other conventional processor.

[0074] In some embodiments, the computing device 90 may further include: an input device 94, an output device 95, and an external communication interface 96. These components are interconnected through a bus system and / or other forms of connection mechanisms (not shown in the figure). In this embodiment, the input device can be a network connector, an analog-to-digital converter, etc., and the output device can be a display, a speaker, etc.

[0075] In some embodiments, the input device 94 may further include, for example, a keyboard, a mouse, a microphone, etc. The output device 95 can output various information to the outside. For example, in addition to the above-mentioned display and speaker, it can also be a printer, a projector, and a communication network and its connected remote output devices, etc. The external communication interface 96 can be wired, such as a standard serial port (RS232), a general-purpose interface bus (GPIB) interface, an ethernet interface, a universal serial bus (USB) interface, or wireless, such as wireless network communication technology (WiFi), bluetooth, etc.

[0076] The description of the above embodiment of the computing device 90 is similar to the description of the above method embodiment and has similar beneficial effects to the method embodiment. For the technical details not disclosed in the embodiment of the computing device 90 of the present application, please refer to the description of the method embodiment in the present application for understanding. Embodiment Five

[0077] An embodiment of the present application provides a computer-readable storage medium, on which an executable program is stored. When the executable program is executed by a processor, the steps of the method described in the second embodiment are implemented.

[0078] Exemplarily, the computer-readable storage medium may adopt any combination of one or more readable media. The readable media may be a readable signal medium or a readable storage medium. A computer-readable storage medium is a tangible device that can retain and store instructions used by an instruction execution device. The readable storage medium may include, for example, but is not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the above. More specific examples (a non-exhaustive list) of the readable storage medium include: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), a flash memory, a portable compact disc read-only memory (CD-ROM), a digital versatile disc (DVD), a memory stick, a floppy disk, a mechanically encoded device, such as a punched card or raised structures in a groove having instructions stored thereon, and any suitable combination of the above. Among them: The RAM includes: Static Random Access Memory (SRAM), Synchronous Static Random Access Memory (SSRAM), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SDRAM), Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM), Enhanced Synchronous Dynamic Random Access Memory (ESDRAM), SyncLink Dynamic Random Access Memory (SLDRAM), and Direct Rambus Random Access Memory (DRRAM).

[0079] The ROM includes: Programmable Read-Only Memory (PROM), Erasable Programmable Read-Only Memory (EPROM), and Electrically Erasable Programmable Read-Only Memory (EEPROM).

[0080] The computer-readable storage medium used herein is not construed as being an instantaneous signal itself, such as a radio wave or other freely propagating electromagnetic wave, an electromagnetic wave propagated through a waveguide or other transmission medium (e.g., an optical pulse through an optical fiber cable), or an electrical signal transmitted through a wire.

[0081] The description of the computer-readable storage medium embodiments above is similar to the description of the method embodiments above and has similar beneficial effects to those of the method embodiments. For technical details not disclosed in the computer-readable storage medium embodiments of this example, please refer to the description of the method embodiments in this application for understanding.

[0082] It should be noted that the various embodiments provided in the embodiments of the present application belong to the same concept; among the technical solutions recorded in each embodiment, the technical features can be arbitrarily combined without conflict to form a new embodiment.

[0083] In the above description, the terms "first / second / ..." involved are only used to distinguish similar objects and do not represent a specific order for the objects. It can be understood that "first / second / third" can be interchanged with a specific order or sequence when permitted.

[0084] It should be noted that in this text, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising one..." does not exclude the existence of additional identical elements in the process, method, article or device comprising that element.

[0085] In the description of the embodiments of the present application, unless otherwise specified and defined, the term "connection" should be understood in a broad sense. For example, it can be an electrical connection, or the connection inside two components. It can be directly connected, or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meaning of the above terms can be understood according to specific circumstances.

[0086] The purpose of the terms used herein is only to describe specific embodiments and is not a limitation of the present application. When used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise. The terms "comprising" and / or "including", when used in this specification, identify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups. When used herein, the term "and / or" includes any and all combinations of the related listed items.

[0087] It should be understood that the "one embodiment" or "some embodiments" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiments are included in at least one embodiment of the present application. Therefore, the "in one embodiment" or "in some embodiments" that appear throughout the specification do not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present application, the embodiment numbers are only for description and do not represent the superiority or inferiority of the embodiments.

[0088] It should be understood that the magnitudes of the sequence numbers of the above processes do not imply the order of execution, and the order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.

[0089] It should be understood that the above embodiments are all exemplary and are not used to cover all possible implementation manners included in the technical solution of the present application. Without departing from the scope of the disclosure of the present application, various deformations and changes can also be made on the basis of the above embodiments. Similarly, the various technical features of the above embodiments can also be arbitrarily combined to form other embodiments of the present application that may not be clearly described. Therefore, the above embodiments only represent several implementation manners of the present application and do not limit the protection scope of the patent of the present application.

Claims

1. A wafer coating device, characterized in that, Comprising: A coating chamber for containing a coating liquid; A clamping assembly configured to clamp a wafer and drive the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and drive the wafer into a horizontal state after the wafer is immersed in the coating liquid; A liquid supply assembly for adding the coating liquid into the coating chamber; including a first liquid supply member and a second liquid supply member located below the clamping assembly, the first liquid supply member includes a first liquid supply port for supplying liquid in a first direction extending inward along the circumferential side of the coating chamber; the second liquid supply member includes a second liquid supply port for supplying liquid in a second direction extending upward from the bottom end of the coating chamber; A control component for controlling the clamping assembly and the liquid supply assembly; during the process of the wafer being immersed in the coating liquid, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be a first preset flow rate and a second preset flow rate respectively; after the wafer enters the horizontal state, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be both the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

2. The wafer coating device according to claim 1, wherein The clamping assembly is further controlled to: make the movement of the wafer being immersed in the coating liquid be a uniform descending movement or a uniformly accelerated descending movement; the descending speed of the wafer before entering the horizontal state is 45 mm / s - 150 mm / s.

3. The wafer coating apparatus according to claim 1, characterized in that, The clamping assembly includes a supporting portion for supporting the wafer from the bottom of the wafer, and the side wall of the supporting portion is provided with a guiding inclined surface forming an obtuse angle with the lower surface of the wafer to facilitate the discharge of gas along the guiding inclined surface; the angle of the obtuse angle is 95° - 150°.

4. The wafer coating apparatus according to claim 3, wherein The thickness of the supporting portion is 0.8 mm - 1.2 mm.

5. The wafer coating device according to claim 1, characterized in that, The ratio of the second preset flow rate to the first preset flow rate is 2 - 4.

6. The wafer coating device according to claim 1, characterized in that, The liquid outlet direction of the second liquid supply port is inclined to one side in the vertical direction, and the inclined direction is the same as the inclined direction when the wafer is placed in the coating chamber.

7. The wafer coating device according to claim 1, characterized in that, The first liquid supply member further includes a liquid outlet guiding member, and there is no overlap between the orthographic projection of the wafer and the liquid outlet guiding member.

8. A control method for a wafer coating device according to any one of claims 1-7, characterized in that, The method includes: Controlling the clamping assembly to drive the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and entering the horizontal state after the wafer is immersed in the coating liquid; During the process of the wafer being immersed in the coating liquid, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be a first preset flow rate and a second preset flow rate respectively; after the wafer enters the horizontal state, controlling the liquid flow rates of the first liquid supply port and the second liquid supply port to be both the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

9. The control method of the wafer coating device according to claim 8, characterized in that, The controlling the clamping assembly to drive the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and entering the horizontal state after the wafer is immersed in the coating liquid, includes: Controlling the clamping assembly to make the movement of the wafer being immersed in the coating liquid be a uniform descending movement or a uniformly accelerated descending movement; the descending speed of the wafer before entering the horizontal state is 45 mm / s - 150 mm / s.

10. The control method of the wafer coating device according to claim 8, characterized in that, The ratio of the second preset flow rate to the first preset flow rate is 2 - 4.

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