Wet process device and drying method

Abstract

The invention discloses a wet method device and a drying method, and the device comprises a process cavity which is used for accommodating a to-be-dried wafer; the fan filtering unit is arranged above the process cavity and is suitable for providing filtered air into the process cavity; the blowing unit is arranged between the fan filtering unit and the wafer, and the blowing unit is suitable for blowing replacement steam to the surface of the wafer so as to remove moisture on the surface of the wafer; and the drying unit is connected with the process cavity, and the drying unit is suitable for conveying dry gas into the process cavity. In the process of drying the wafer, the risk that watermarks appear on the surface of the wafer in the gas atmosphere in the process cavity can be reduced, so that the dryness of the surface of the wafer is improved, and the product quality of the wafer is further improved.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a wet process device and a drying method. Background Art

[0002] Wet chemical technology (WET Clean) plays a crucial role in the manufacturing of semiconductor integrated circuits. Currently, semiconductor factories in major chip manufacturing industries at home and abroad are equipped with related wet process devices. The wet process device can complete multiple process steps, such as cleaning, etching, and drying, in a closed environment, thus significantly improving production efficiency and product quality. Wet chemical technology effectively removes contaminants on the wafer surface through the use of various chemical solutions and physical methods, ensuring a high cleanliness of the wafer surface and providing a good foundation for subsequent process steps such as lithography and deposition.

[0003] In advanced processes, semiconductor factories generally adopt advanced single-chamber equipment, which can complete multiple process steps, including cleaning, etching, and drying, in the same chamber. Especially during the drying process, high-temperature IPA (isopropyl alcohol vapor) is widely used for drying the wafer surface. IPA vapor has high volatility and low surface tension, and can quickly displace the moisture on the wafer surface, thereby improving the dryness and surface quality of the wafer. The high-temperature IPA drying process generally includes the following steps: First, the wafer is cleaned in a chemical solution to remove surface contaminants; then, the wafer is placed in a chamber filled with IPA vapor, and the IPA vapor mixes with the chemical solution remaining on the wafer surface to form a mixture containing IPA and the chemical solution; by heating or reducing the pressure, the mixture is evaporated from the wafer surface, thereby drying the wafer; finally, the dried wafer is taken out of the chamber for subsequent process steps.

[0004] Currently, the dryness of the wet process device for wafers still needs to be improved. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide a wet process device and a drying method, which improve the dryness of the wafer surface.

[0006] To solve the above problems, embodiments of the present invention provide a wet process device, including: a process chamber for accommodating a wafer to be dried; a fan filter unit disposed above the process chamber and adapted to provide filtered air into the process chamber; a blowing unit disposed between the fan filter unit and the wafer, and the blowing unit is adapted to blow replacement vapor onto the wafer surface to remove the moisture on the wafer surface; a drying unit connected to the process chamber, and the drying unit is adapted to transport dry gas into the process chamber.

[0007] Optionally, the drying unit includes a gas pipeline and a gas flow control valve disposed on the gas pipeline.

[0008] Optionally, the drying gas includes one or both of nitrogen and compressed dry air.

[0009] Optionally, the wet process device further includes: a gas distribution unit disposed in the process chamber, and the gas distribution unit is connected to the drying unit, and the gas distribution unit is adapted to uniformly distribute the drying gas in the process chamber.

[0010] Optionally, the wet process device further includes: a sealing unit disposed at the connection position between the drying unit and the process chamber.

[0011] Optionally, the replacement steam includes isopropyl alcohol steam.

[0012] Optionally, the process chamber includes a carrier stage, and the wafer is placed on the carrier stage.

[0013] Optionally, the wet process device further includes: a cleaning unit disposed between the fan filter unit and the wafer and on the side of the blowing unit, and the cleaning unit is adapted to remove impurities on the surface of the wafer.

[0014] Optionally, the wet process device further includes: an exhaust unit adapted to exhaust volatile gases and replacement steam in the process chamber.

[0015] Optionally, the exhaust unit includes a suction pump.

[0016] Optionally, the fan filter unit includes a fan and a filter.

[0017] Correspondingly, an embodiment of the present invention further provides a drying method, including: providing the wet process device provided by the present invention; closing the fan filter unit; after closing the fan filter unit, turning on the blowing unit, and the blowing unit is adapted to blow replacement steam onto the surface of the wafer to remove moisture on the surface of the wafer; after closing the fan filter unit, turning on the drying unit, and the drying unit is adapted to convey drying gas into the process chamber.

[0018] Optionally, the process chamber includes a carrier stage, and the wafer is placed on the carrier stage; before turning on the blowing unit, it further includes: turning on the carrier stage, and the carrier stage rotates at a constant speed.

[0019] Optionally, in the step of the blowing unit blowing replacement steam onto the surface of the wafer to remove moisture on the surface of the wafer, the replacement steam includes isopropyl alcohol steam.

[0020] Optionally, in the step of the drying unit conveying drying gas into the process chamber, the gas pressure of the drying gas is between 0.4 MPa and 0.5 MPa.

[0021] Optionally, the wet process device further includes: an exhaust unit; the drying method further includes: after closing the fan filter unit, turning on the exhaust unit, and the exhaust unit is adapted to exhaust volatile gases and replacement steam in the process chamber.

[0022] Optionally, the wet process apparatus further includes: a cleaning unit disposed between the fan filter unit and the wafer and on the side of the blowing unit; before closing the fan filter unit, it further includes: turning on the cleaning unit and removing impurities on the wafer surface with cleaning liquid.

[0023] Optionally, the cleaning liquid includes deionized water.

[0024] Optionally, the drying gas includes one or both of nitrogen and compressed dry air.

[0025] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0026] The embodiment of the present invention provides a wet process apparatus. The fan filter unit is disposed above the process chamber and is adapted to supply filtered air into the process chamber. The blowing unit is disposed between the fan filter unit and the wafer, and the blowing unit is adapted to blow replacement steam onto the wafer surface to remove the moisture on the wafer surface. The drying unit is connected to the process chamber, and the drying unit is adapted to transport drying gas into the process chamber. When using this wet process apparatus to dry the wafer to be dried, the blowing unit can blow replacement steam onto the wafer surface to remove the moisture on the wafer surface. The present invention is provided with a drying unit connected to the process chamber, and this drying unit can transport drying gas into the process chamber. Compared with the solution where the gas atmosphere in the process chamber is air during the prior drying process, the present invention transports drying gas into the process chamber through the drying unit, and the probability of moisture existing in the drying gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber. That is to say, during the drying process of the wafer, the risk of watermarks appearing on the surface of the wafer due to the gas atmosphere in the process chamber can be reduced, thereby improving the dryness of the wafer surface and further improving the product quality of the wafer.

[0027] An embodiment of the present invention provides a drying method. A wet process device provided by the present invention is provided. After closing the fan filter unit, the blowing unit is turned on. The blowing unit is adapted to blow replacement steam onto the surface of the wafer to remove the moisture on the surface of the wafer. After closing the fan filter unit, the drying unit is turned on. The drying unit is adapted to convey dry gas into the process chamber. Compared with the existing solution of turning on the fan filter unit during the drying process of the wafer, in the embodiment of the present invention, before drying the wafer, the fan filter unit is first turned off, and then the blowing unit and the drying unit are turned on. The drying unit can convey dry gas into the process chamber. Compared with the existing solution where the gas atmosphere in the process chamber is air during the drying process, the present invention conveys dry gas into the process chamber through the drying unit. The probability of moisture existing in the dry gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber. That is to say, during the drying process of the wafer, the risk of watermarks appearing on the surface of the wafer due to the gas atmosphere in the process chamber can be reduced, thereby improving the drying degree of the wafer surface and further improving the product quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a schematic structural diagram corresponding to an embodiment of the wet process device of the present invention;

[0029] Figure 2 shows a flowchart corresponding to the drying method of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0030] As can be seen from the background art, currently, the drying degree of wafers by wet process devices still needs to be improved. Specifically, during the drying process of wafers, the gas atmosphere inside the process chamber is jointly maintained by the fan filter unit (FFU) and the exhaust unit (EXH) in the wet process device. The fan filter unit is responsible for filtering and blowing in clean air, while the exhaust unit is responsible for discharging the volatilized water vapor. However, due to the large water content in the clean air, there is a risk of water accumulation in the gas atmosphere in the process chamber, thus increasing the risk of watermarks on the surface of the wafer due to water accumulation in the gas atmosphere during the drying process of the wafer surface, and further affecting the drying degree of the wafer surface.

[0031] To solve the technical problems, an embodiment of the present invention provides a wet process device, including: a process chamber for accommodating the wafer to be dried; a fan filter unit disposed above the process chamber and adapted to provide filtered air into the process chamber; a blowing unit disposed between the fan filter unit and the wafer, and the blowing unit is adapted to blow replacement steam onto the surface of the wafer to remove the moisture on the surface of the wafer; a drying unit connected to the process chamber, and the drying unit is adapted to convey dry gas into the process chamber.

[0032] In the wet process device provided by an embodiment of the present invention, a fan filter unit is disposed above the process chamber and is adapted to supply filtered air into the process chamber. A blowing unit is disposed between the fan filter unit and the wafer, and the blowing unit is adapted to blow replacement steam onto the surface of the wafer to remove the moisture on the surface of the wafer. A drying unit is connected to the process chamber, and the drying unit is adapted to transport dry gas into the process chamber. When drying the wafer to be dried by using this wet process device, the blowing unit can blow replacement steam onto the surface of the wafer to remove the moisture on the surface of the wafer. In the present invention, through the drying unit connected to the process chamber, the drying unit can transport dry gas into the process chamber. Compared with the solution in the prior art drying process where the gas atmosphere in the process chamber is air, in the present invention, dry gas is transported into the process chamber by the drying unit, and the probability of moisture existing in the dry gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber. That is to say, during the drying process of the wafer, the risk of watermarks appearing on the surface of the wafer due to the gas atmosphere in the process chamber can be reduced, thereby improving the dryness of the wafer surface and further improving the product quality of the wafer.

[0033] To make the above objects, features, and advantages of the embodiments of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given with reference to the accompanying drawings.

[0034] Figure 1 It is a schematic structural diagram corresponding to an embodiment of the wet process device of the present invention.

[0035] The wet process device includes: a process chamber 160 for accommodating the wafer 151 to be dried; a fan filter unit 100 disposed above the process chamber 160 and adapted to supply filtered air into the process chamber 160; a blowing unit 120 disposed between the fan filter unit 100 and the wafer 151, and the blowing unit 120 is adapted to blow replacement steam onto the surface of the wafer 151 to remove the moisture on the surface of the wafer 151; a drying unit 101 connected to the process chamber 160, and the drying unit 101 is adapted to transport dry gas into the process chamber 160.

[0036] Specifically, the fan filter unit 100 is disposed above the process chamber 160 and is adapted to supply filtered air into the process chamber 160. The blowing unit 120 is disposed between the fan filter unit 100 and the wafer 151, and the blowing unit 120 is adapted to blow replacement steam onto the surface of the wafer 151 to remove moisture on the surface of the wafer 151. The drying unit 101 is connected to the process chamber 160, and the drying unit 101 is adapted to transport dry gas into the process chamber 160. When drying the wafer 151 to be dried by using this wet process device, the blowing unit 120 can blow replacement steam onto the surface of the wafer 151 to remove moisture on the surface of the wafer 151. In the present invention, through the drying unit 101 connected to the process chamber 160, the drying unit 101 can transport dry gas into the process chamber 160. Compared with the solution in the prior drying process where the gas atmosphere in the process chamber 160 is air, in the present invention, dry gas is transported into the process chamber 160 by the drying unit 101, and the probability of moisture existing in the dry gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber 160. That is to say, during the drying process of the wafer 151, the risk of watermarks appearing on the surface of the wafer 151 due to the gas atmosphere in the process chamber 160 can be reduced, thereby improving the dryness of the surface of the wafer 151 and further improving the product quality of the wafer 151.

[0037] It should be noted that the process chamber 160 is used to accommodate the wafer 151 to be dried. As the core component of the entire wet process device, the process chamber 160 provides a closed and stable environment for the drying process of the wafer 151, effectively preventing the influence of moisture and pollutants in the external environment on the drying effect of the wafer 151, thereby improving the dryness of the surface of the wafer 151 and the product quality.

[0038] In this embodiment, the process chamber 160 includes a carrier 150, and the wafer 151 is placed on the carrier 150.

[0039] Specifically, the design of the carrier 150 can ensure that the wafer 151 to be dried maintains a stable position and posture during the drying process, which is beneficial to the uniform action of the dry gas and the replacement steam on the surface of the wafer 151, further improving the drying effect and the uniformity of the surface of the wafer 151.

[0040] As an example, the wet process device further includes: a gas distribution unit (not shown in the figure), which is disposed in the process chamber 160, and the gas distribution unit is connected to the drying unit 101, and the gas distribution unit is adapted to uniformly distribute the dry gas in the process chamber 160.

[0041] Specifically, the gas distribution unit can evenly distribute the dry gas throughout the process chamber 160, avoiding the risk of excessive or insufficient local dry gas concentration in the process chamber 160, thereby ensuring effective drying of all parts of the surface of the wafer 151 and reducing the risk of watermarks appearing on the surface of the wafer 151.

[0042] In this embodiment, the gas distribution unit includes a plurality of spray holes evenly arranged in the process chamber 160.

[0043] It should be noted that the drying unit 101 transports the dry gas to the gas distribution unit through a gas pipeline. After receiving these dry gases, the gas distribution unit evenly disperses the dry gases into the process chamber 160 by means of its plurality of spray holes.

[0044] It should also be noted that the gas distribution unit is arranged inside the process chamber 160 and can be located on the top surface or the side surface of the process chamber 160 to ensure that the dry gas can cover the entire surface of the wafer 151.

[0045] Specifically, during the drying process, the blowing unit 120 blows replacement steam onto the surface of the wafer 151 to be dried to remove the moisture on the surface of the wafer 151. The dry gas provided by the gas distribution unit helps to maintain a low-humidity environment in the process chamber 160 and reduces the re-adsorption of moisture in the replacement steam, thereby improving the drying efficiency and the dryness of the surface of the wafer 151.

[0046] In this embodiment, the fan filter unit 100 is arranged above the process chamber 160 and is adapted to provide filtered air into the process chamber 160.

[0047] It should be noted that the manufacturing of semiconductor structures increasingly relies on wet process equipment. The wet process equipment can complete multiple process steps in a closed environment and not only perform drying treatment on the wafer 151, thereby improving production efficiency and product quality. For this reason, the fan filter unit 100 is provided in the wet process equipment, which can provide filtered clean air for the process chamber 160, reduce the content of particulate matter and moisture in the air, reduce the risk of contaminating the surface of the wafer 151 during other process steps, and create a relatively stable air flow environment inside the entire equipment at the same time.

[0048] Specifically, the other process steps can be cleaning, lithography, degluing or deposition processes, which are not limited herein.

[0049] In this embodiment, the fan filter unit 100 includes a fan and a filter.

[0050] Specifically, the combination of the blower and the filter can efficiently filter impurities in the air, ensuring that the air entering the process chamber 160 meets high cleanliness standards and providing a good basic environment for the processing of the wafer 151.

[0051] It should be noted that the blowing unit 120 can accurately blow the replacement steam onto the surface of the wafer 151 to be dried, so that the moisture on the surface of the wafer 151 is replaced and removed, thereby obtaining a high dryness on the surface of the wafer 151. At the same time, the blowing unit 120 and the dry gas transported by the drying unit 101 work together to further reduce the possibility of water vapor enrichment and attachment on the surface of the wafer 151 in the process chamber 160.

[0052] As an example, the replacement steam includes isopropyl alcohol (IPA) steam.

[0053] Specifically, IPA can be miscible with water in any proportion, so that IPA can form a mixed solution with the moisture on the surface of the wafer 151. The surface tension of this mixed solution is much lower than that of water. The mixed solution with low surface tension helps the moisture on the surface of the wafer 151 to detach from the surface of the wafer 151 more easily. At the same time, IPA has high volatility. After the IPA steam contacts the surface of the wafer 151 and forms a mixed solution, IPA will quickly volatilize and carry away the moisture, thus realizing the drying of the wafer 151.

[0054] It should be noted that through the drying unit 101 connected to the process chamber 160, the drying unit 101 can transport dry gas into the process chamber 160. Compared with the existing solution where the gas atmosphere in the process chamber 160 is air during the drying process, in the present invention, the drying unit 101 transports dry gas into the process chamber 160, and the probability of water in the dry gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber 160. That is to say, during the drying process of the wafer 151, the risk of watermarks on the surface of the wafer 151 in the gas atmosphere in the process chamber 160 can be reduced, thereby improving the dryness of the surface of the wafer 151 and further improving the product quality of the wafer 151.

[0055] In this embodiment, the drying unit 101 includes a gas pipeline and a gas flow control valve provided on the gas pipeline.

[0056] Specifically, the settings of the gas pipeline and the flow control valve can accurately control the flow rate of the dry gas, ensuring the stability and repeatability of the drying process, and can be flexibly adjusted according to different process requirements. At the same time, during the drying of the wafer 151 by the wet process device, by increasing the gas flow rate of the dry gas, the drying time of the surface of the wafer 151 can be further shortened, thereby improving the production capacity of the wafer 151.

[0057] In this embodiment, the drying gas includes one or both of nitrogen (N2) and compressed dry air (CDA).

[0058] It should be noted that both nitrogen and compressed dry air have extremely low moisture content, which can provide a dry and clean gas environment for the process chamber 160, effectively avoiding the risk of moisture in the gas atmosphere of the process chamber 160 interfering with the drying process, reducing the probability of water marks appearing on the surface of the wafer 151. At the same time, the chemical properties of nitrogen and compressed dry air are stable and will not react with the surface of the wafer 151, reducing the probability of damaging the surface of the wafer 151.

[0059] In this embodiment, the wet process device further includes: a sealing unit disposed at the connection position between the drying unit 101 and the process chamber 160.

[0060] Specifically, the sealing unit can effectively prevent the drying gas from leaking into the external environment during transportation, and at the same time avoid the risk of moisture and pollutants in the external air entering the process chamber 160, ensuring the stability and reliability of the drying environment.

[0061] As an example, the wet process device further includes: a cleaning unit 126 disposed between the fan filter unit 100 and the wafer 151 and on the side of the blowing unit 120, and the cleaning unit 126 is adapted to remove impurities on the surface of the wafer 151.

[0062] It should be noted that the cleaning unit 126 can clean the surface of the wafer 151 before drying the wafer 151, remove impurities such as particulate matter and organic matter on the surface of the wafer 151, improve the cleanliness of the wafer 151, and thus improve the product quality of the wafer 151.

[0063] Specifically, the cleaning unit 126 cleans the surface of the wafer 151 with deionized water.

[0064] In this embodiment, the wet process device further includes: an exhaust unit 110 adapted to exhaust volatile gases and displacement steam in the process chamber 160.

[0065] It should be noted that the exhaust unit 110 can timely exhaust the volatile gases and displacement steam generated in the process chamber 160, maintain the pressure balance and the stability of the gas atmosphere in the process chamber 160, and prevent the accumulation of various gases from having an adverse impact on the drying process.

[0066] As an example, the exhaust unit 110 includes a suction pump.

[0067] Specifically, the air extraction pump ensures that volatile gases and displacement steam are quickly and effectively discharged from the process chamber 160 by generating a negative pressure, thereby ensuring the efficient progress of the entire drying process and helping to maintain the concentration and drying effect of the drying gas in the process chamber 160.

[0068] Correspondingly, an embodiment of the present invention further provides a drying method. Among them, Figure 2 The corresponding step flowchart of the drying method of the present invention is shown.

[0069] Specifically, the steps of the drying method in the embodiment of the present invention include:

[0070] Step S1: Provide the wet process device provided by the present invention;

[0071] Step S2: Close the fan filter unit 100;

[0072] After closing the fan filter unit 100, step S3: Turn on the blowing unit 120. The blowing unit 120 is adapted to blow displacement steam onto the surface of the wafer 151 to remove the moisture on the surface of the wafer 151;

[0073] After closing the fan filter unit 100, step S4: Turn on the drying unit 101. The drying unit 101 is adapted to convey drying gas into the process chamber 160.

[0074] Specifically, compared with the existing solution of turning on the fan filter unit 100 during the drying process of the wafer 151, in the embodiment of the present invention, before drying the wafer 151, the fan filter unit 100 is first turned off, and then the blowing unit 120 and the drying unit 101 are turned on. The drying unit 101 can convey drying gas into the process chamber 160. Compared with the existing solution where the gas atmosphere in the process chamber 160 is air during the drying process, the present invention conveys drying gas into the process chamber 160 through the drying unit 101. The probability of moisture existing in the drying gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber 160. That is to say, during the drying process of the wafer 151, the risk of watermarks appearing on the surface of the wafer 151 due to the gas atmosphere in the process chamber 160 can be reduced, thereby improving the dryness of the surface of the wafer 151 and further improving the product quality of the wafer 151.

[0075] To make the above objects, features, and advantages of the embodiments of the present invention more obvious and understandable, the following combines Figure 1 A detailed description is given of the specific embodiments of the present invention.

[0076] Execute step S1: Provide the wet process device provided by the present invention.

[0077] Specifically, the detailed description of the wet process device will not be elaborated here. Please refer to the description of the wet process device in the foregoing embodiments.

[0078] In this embodiment, the process chamber 160 includes a susceptor 150, and the wafer 151 is placed on the susceptor 150.

[0079] Specifically, the design of the susceptor 150 can ensure that the wafer 151 to be dried maintains a stable position and attitude during the drying process, which is conducive to the uniform action of the drying gas and the replacement steam on the surface of the wafer 151, further improving the drying effect and the uniformity of the surface of the wafer 151.

[0080] In this embodiment, the wet process device further includes: an exhaust unit 110.

[0081] It should be noted that the exhaust unit 110 can timely discharge the volatile gases and replacement steam generated in the process chamber 160, maintain the pressure balance and the stability of the gas atmosphere in the process chamber 160, and prevent the accumulation of various gases from having an adverse impact on the drying process.

[0082] As an example, the exhaust unit 110 includes a suction pump.

[0083] Specifically, the suction pump generates a negative pressure to ensure that the volatile gases and replacement steam are quickly and effectively discharged from the process chamber 160, thereby ensuring the efficient progress of the entire drying process and helping to maintain the concentration of the drying gas and the drying effect in the process chamber 160.

[0084] As an example, the wet process device further includes: a cleaning unit 126, which is arranged between the fan filter unit 100 and the wafer 151 and is located on the side of the blowing unit 120. The cleaning unit 126 is adapted to remove impurities on the surface of the wafer 151.

[0085] It should be noted that the cleaning unit 126 can clean the surface of the wafer 151 before drying the wafer 151, remove impurities such as particulate matter and organic matter on the surface of the wafer 151, improve the cleanliness of the wafer 151, and thus improve the product quality of the wafer 151.

[0086] Step S11 is executed: Before closing the fan filter unit 100, it further includes: turning on the cleaning unit 126 and removing impurities on the surface of the wafer 151 with a cleaning liquid.

[0087] Specifically, turning on the cleaning unit 126 can clean the surface of the wafer 151 before drying the wafer 151, remove impurities such as particulate matter and organic matter on the surface of the wafer 151, improve the cleanliness of the wafer 151, and thus improve the product quality of the wafer 151.

[0088] As an example, the cleaning liquid includes deionized water.

[0089] Specifically, deionized water can dissolve and remove soluble impurities on the surface of the wafer 151, such as particles, organic substances, metal ions, etc. During the cleaning process, deionized water serves as a rinsing liquid, which can effectively rinse away the soluble compounds generated by the chemical liquid reaction and the unreacted chemical liquid, thereby ensuring the cleanliness of the surface of the wafer 151 and improving the cleanliness of the surface of the wafer 151.

[0090] Perform step S2: Turn off the fan filter unit 100.

[0091] Specifically, by turning off the fan filter unit 100 and then turning on the blowing unit 120 and the drying unit 101 subsequently, the drying unit 101 can transport dry gas into the process chamber 160. Compared with the existing solution where the gas atmosphere in the process chamber 160 is air during the drying process, in the present invention, dry gas is transported into the process chamber 160 by the drying unit 101, and the probability of water vapor existing in the dry gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber 160.

[0092] Perform step S21: Before turning on the blowing unit 120, it further includes: turning on the carrier 150, and the carrier 150 rotates at a constant speed.

[0093] Specifically, turning on the carrier 150 and the carrier 150 rotates at a constant speed, so that the surface of the wafer 151 carried on the carrier 150 is evenly distributed during the subsequent blowing and replacing steam process, thereby completely removing the water vapor on the surface of the wafer 151.

[0094] Perform step S3: After turning off the fan filter unit 100, turn on the blowing unit 120, and the blowing unit 120 is suitable for blowing replacement steam onto the surface of the wafer 151 to remove the moisture on the surface of the wafer 151.

[0095] It should be noted that the blowing unit 120 can accurately blow the replacement steam onto the surface of the wafer 151 to be dried, so that the moisture on the surface of the wafer 151 is replaced and removed, thereby obtaining a relatively high dryness on the surface of the wafer 151. At the same time, the blowing unit 120 and the dry gas transported by the turned-on drying unit 101 work together to further reduce the possibility of water vapor enrichment and adhesion on the surface of the wafer 151 in the process chamber 160.

[0096] As an example, in the step of the blowing unit 120 blowing replacement steam onto the surface of the wafer 151 to remove the moisture on the surface of the wafer 151, the replacement steam includes isopropyl alcohol (IPA) steam.

[0097] Specifically, IPA can be miscible with water in any proportion, enabling IPA to form a mixed solution with the moisture on the surface of the wafer 151. The surface tension of this mixed solution is much lower than that of water. The mixed solution with a low surface tension helps the moisture on the surface of the wafer 151 to more easily detach from the surface of the wafer 151. At the same time, IPA has high volatility. After the IPA vapor contacts the surface of the wafer 151 and forms a mixed solution, the IPA will quickly volatilize, carrying away the moisture, thereby achieving the drying of the wafer 151.

[0098] Perform step S4: After closing the fan filter unit 100, turn on the drying unit 101. The drying unit 101 is adapted to deliver dry gas into the process chamber 160.

[0099] It should be noted that through the drying unit 101 connected to the process chamber 160, the drying unit 101 can deliver dry gas into the process chamber 160. Compared with the existing solution where the gas atmosphere in the process chamber 160 is air during the drying process, in the present invention, the drying unit 101 delivers dry gas into the process chamber 160. The probability of moisture existing in the dry gas is very low, which can reduce the probability of water vapor enrichment in the gas atmosphere in the process chamber 160. That is to say, during the drying process of the wafer 151, the risk of watermarks appearing on the surface of the wafer 151 in the gas atmosphere in the process chamber 160 can be reduced, thereby improving the dryness of the surface of the wafer 151 and further improving the product quality of the wafer 151.

[0100] In this embodiment, the drying unit 101 includes a gas pipeline and a gas flow control valve provided on the gas pipeline.

[0101] Specifically, the settings of the gas pipeline and the flow control valve can accurately control the flow rate of the dry gas, ensuring the stability and repeatability of the drying process. At the same time, it can be flexibly adjusted according to different process requirements. Also, during the drying process of the wafer 151, by increasing the gas flow rate of the dry gas, the drying time of the surface of the wafer 151 can be further shortened, thereby improving the production capacity of the wafer 151.

[0102] In this embodiment, the dry gas includes one or both of nitrogen (N2) and compressed dry air (CDA).

[0103] It should be noted that both nitrogen and compressed dry air have extremely low moisture content, which can provide a dry and clean gas environment for the process chamber 160, effectively avoiding the risk of moisture in the gas atmosphere of the process chamber 160 interfering with the drying process and reducing the probability of watermarks appearing on the surface of the wafer 151. At the same time, nitrogen and compressed dry air have stable chemical properties and will not react with the surface of the wafer 151, reducing the probability of damage to the surface of the wafer 151.

[0104] It should be noted that in the step of the drying unit 101 delivering dry gas to the process chamber 160, the gas pressure of the dry gas should neither be too high nor too low. If the gas pressure of the dry gas is too high, the process cost will increase; if the gas pressure of the dry gas is too low, the process efficiency of the drying process will be affected. Therefore, in this embodiment, in the step of the drying unit 101 delivering dry gas to the process chamber 160, the gas pressure of the dry gas is between 0.4 MPa and 0.5 MPa.

[0105] Execute step S5: The drying method further includes: after closing the fan filter unit 100, turning on the exhaust unit 110, and the exhaust unit 110 is suitable for exhausting volatile gases and replacement steam in the process chamber 160.

[0106] Specifically, the exhaust unit 110 can timely exhaust the volatile gases and replacement steam generated in the process chamber 160, maintain the pressure balance and the stability of the gas atmosphere in the process chamber 160, and prevent the accumulation of various gases from having an adverse impact on the drying process.

[0107] As an example, the exhaust unit 110 includes a suction pump.

[0108] Specifically, the suction pump generates a negative pressure to ensure that volatile gases and replacement steam are quickly and effectively exhausted from the process chamber 160, thereby ensuring the efficient progress of the entire drying process and helping to maintain the concentration and drying effect of the dry gas in the process chamber 160.

[0109] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. A wet process device, characterized in that, Comprising: A process chamber for accommodating a wafer to be dried; A fan filter unit disposed above the process chamber and adapted to supply filtered air into the process chamber; A blowing unit disposed between the fan filter unit and the wafer, and the blowing unit is adapted to blow replacement steam onto the surface of the wafer to remove moisture on the surface of the wafer; A drying unit connected to the process chamber, and the drying unit is adapted to convey drying gas into the process chamber.

2. The wet process device according to claim 1, wherein The drying unit includes a gas pipeline and a gas flow control valve provided on the gas pipeline.

3. The wet process device according to claim 1, characterized in that, The drying gas includes one or both of nitrogen and compressed dry air.

4. The wet process device according to claim 1, wherein, The wet process device further includes: a gas distribution unit disposed in the process chamber, and the gas distribution unit is connected to the drying unit, and the gas distribution unit is adapted to uniformly distribute the drying gas in the process chamber.

5. The wet process device according to claim 1, characterized in that, The wet process device further includes: a sealing unit disposed at the connection position between the drying unit and the process chamber.

6. The wet process device according to claim 1, wherein The replacement steam includes isopropyl alcohol steam.

7. The wet process device according to claim 1, characterized in that, The process chamber includes a carrier, and the wafer is placed on the carrier.

8. The wet process device according to claim 1, characterized in that, The wet process device further includes: a cleaning unit disposed between the fan filter unit and the wafer and on the side of the blowing unit, and the cleaning unit is adapted to remove impurities on the surface of the wafer.

9. The wet process device according to claim 1, wherein, The wet process device further includes: an exhaust unit adapted to exhaust volatile gases and replacement steam in the process chamber.

10. The wet process device according to claim 9, characterized in that, The exhaust unit includes a suction pump.

11. The wet method device according to claim 1, characterized in that, The fan filter unit includes a fan and a filter.

12. A drying method, characterized in that, Comprising: Providing a wet process device as shown in any one of claims 1 to 11; Closing the fan filter unit; After closing the fan filter unit, turning on the blowing unit, and the blowing unit is adapted to blow replacement steam onto the surface of the wafer to remove moisture on the surface of the wafer; After closing the fan filter unit, turning on the drying unit, and the drying unit is adapted to convey drying gas into the process chamber.

13. The drying method according to claim 12, wherein The process chamber includes a carrier, and the wafer is placed on the carrier; Before turning on the blowing unit, further comprising: turning on the carrier and the carrier rotates at a constant speed.

14. The drying method according to claim 12, characterized in that, In the step of the blowing unit blowing replacement steam onto the surface of the wafer to remove moisture on the surface of the wafer, the replacement steam includes isopropyl alcohol steam.

15. The drying method according to claim 12, characterized in that, In the step of the drying unit conveying drying gas into the process chamber, the gas pressure of the drying gas is between 0.4 MPa and 0.5 MPa.

16. The drying method according to claim 12, characterized in that, The wet process device further includes: an exhaust unit; The drying method further includes: after closing the fan filter unit, turning on the exhaust unit, and the exhaust unit is adapted to exhaust volatile gases and replacement steam in the process chamber.

17. The drying method according to claim 12, characterized in that, The wet process device further includes: a cleaning unit disposed between the fan filter unit and the wafer and on the side of the blowing unit; Before closing the fan filter unit, further comprising: turning on the cleaning unit and removing impurities on the surface of the wafer with a cleaning liquid.

18. The drying method according to claim 17, characterized in that, The cleaning liquid includes deionized water.

19. The drying method according to claim 12, characterized in that, The drying gas includes one or both of nitrogen and compressed dry air.

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