Wafer dry method photoresist removing equipment and photoresist removing method

Abstract

The invention relates to a wafer dry method photoresist removing device and method, and the device comprises a photoresist removing machine which is used for executing a wafer photoresist removing process; the preheating device is connected with the degumming machine table, and the preheating device is used for preheating the degumming machine table; the purging device is connected with the glue removing machine table, and the purging device is used for introducing first gas into the glue removing machine table to purge and remove water vapor in the glue removing machine table; and the controller is in control connection with the preheating device and the purging device. According to the invention, the controller controls the preheating device to preheat the photoresist removing machine table, and controls the purging device to introduce the first gas into the photoresist removing machine table to purge and remove the water vapor in the photoresist removing machine table, so that the residual water vapor in the photoresist removing machine table is prevented from being attached to the surface of the wafer in the photoresist removing process of the wafer, the surface characteristics of the wafer are not influenced, and the quality of the wafer is improved. And the problem that the photoresist layer formed on the surface of the wafer subsequently is damaged is solved.

Description

Technical Field

[0001] The present disclosure relates to the field of integrated circuit technology, and in particular, to a wafer dry stripping device and a stripping method. Background Art

[0002] In the process of semiconductor manufacturing, when forming a circuit pattern on a wafer, it is necessary to perform multiple steps of forming photoresist and removing photoresist on the wafer.

[0003] However, after performing the degumming process on the wafer, condensation water may adhere to the surface of the wafer, affecting the surface characteristics of the wafer. When coating the photoresist material on the wafer and drying to form the photoresist, the photoresist in the condensation water area may crack due to heating, resulting in photoresist damage (PR damage defect), affecting the photoresist development quality, further affecting the accuracy and efficiency of subsequent process steps, and also increasing economic losses. Summary of the Invention

[0004] Based on this, it is necessary to provide a wafer dry stripping device and a stripping method for solving the problem that condensation water adheres to the surface of the wafer after performing the degumming process on the wafer in the prior art.

[0005] To achieve the above object, on the one hand, the present disclosure provides a wafer dry stripping device, including:

[0006] A stripping machine platform for performing the wafer stripping process;

[0007] A preheating device connected to the stripping machine platform, the preheating device being used for preheating the stripping machine platform;

[0008] A purging device connected to the stripping machine platform, the purging device being used for introducing a first gas into the stripping machine platform to purge and remove the water vapor in the stripping machine platform;

[0009] A controller, the controller being respectively connected to the stripping machine platform, the preheating device, and the purging device for control.

[0010] In one embodiment, it further includes:

[0011] A suction device respectively connected to the stripping machine platform and the controller, the suction device being used for performing vacuum pumping on the stripping machine platform to suck and remove the water vapor in the stripping machine platform.

[0012] In one embodiment, it further includes:

[0013] A sensor is disposed inside the degumming machine, and the sensor is signal-connected to the controller. The sensor is used to monitor the water vapor content inside the degumming machine and transmit it to the controller;

[0014] The controller adjusts the parameters of the preheating device for preheating treatment and the purging parameters of the purging device to the degumming machine according to the water vapor content inside the degumming machine.

[0015] In one embodiment, it further includes:

[0016] A wafer handling device is connected to the degumming machine. The wafer handling device is used to load a virtual degummed wafer into the degumming machine and unload the processed virtual degummed wafer from the degumming machine.

[0017] In one embodiment, the controller is control-connected to the wafer handling device, and the controller adjusts the number of virtual degummed wafers loaded into the degumming machine by the wafer handling device according to the water vapor content inside the degumming machine.

[0018] In one embodiment, the dry wafer degumming equipment includes:

[0019] A first degumming machine for performing a high-dose ion implantation degumming process;

[0020] A first preheating device is connected to the first degumming machine. The first preheating device is used to preheat the first degumming machine;

[0021] A first purging device is connected to the first degumming machine. The first purging device is used to introduce gas into the first degumming machine to purge and remove the water vapor inside the first degumming machine;

[0022] A second degumming machine for performing an oxidation degumming process;

[0023] A second preheating device is connected to the second degumming machine. The second preheating device is used to preheat the second degumming machine;

[0024] A second purging device is connected to the second degumming machine. The second purging device is used to introduce gas into the second degumming machine to purge and remove the water vapor inside the second degumming machine;

[0025] The controller is respectively control-connected to the first degumming machine, the first preheating device, the first purging device, the second degumming machine, the second preheating device, and the second purging device.

[0026] In a second aspect, the present disclosure provides a method for dry stripping of wafers. Before performing the stripping process on the wafer to be stripped, it includes:

[0027] Loading a virtual stripping wafer in the stripping machine tool and preheating the stripping machine tool at a first temperature;

[0028] Introducing a first gas into the stripping machine tool to purge and remove the water vapor in the stripping machine tool.

[0029] In one embodiment, the surface of the virtual stripping wafer is elemental silicon, and the surface of the virtual stripping wafer is not patterned;

[0030] The first temperature is 150°C - 200°C.

[0031] In one embodiment, the first gas includes a mixture of oxygen and nitrogen, and the ratio of oxygen to nitrogen is 5 - 15:1.

[0032] In one embodiment, while preheating the stripping machine tool, a vacuum pumping process is performed on the stripping machine tool to suck and remove the water vapor in the stripping machine tool.

[0033] The dry stripping equipment and method for wafers of the present disclosure have the following beneficial effects:

[0034] The dry stripping equipment for wafers of the present disclosure includes a stripping machine tool, a preheating device, a purging device, and a controller. The controller controls the preheating device to perform preheating treatment on the stripping machine tool, and controls the purging device to introduce a first gas into the stripping machine tool to purge and remove the water vapor in the stripping machine tool, avoiding the residual water vapor in the stripping machine tool from adhering to the surface of the wafer during the wafer stripping process, affecting the surface characteristics of the wafer, and improving the problem of damage to the photoresist layer formed on the wafer surface subsequently;

[0035] The dry stripping method for wafers of the present disclosure uses a virtual stripping wafer to perform preheating and purging treatment on the stripping machine tool before wafer stripping to remove the water vapor in the stripping machine tool, avoiding the residual water vapor in the stripping machine tool from adhering to the surface of the wafer during the wafer stripping process, affecting the surface characteristics of the wafer, and improving the problem of damage to the photoresist layer formed on the wafer surface subsequently. Description of the Drawings

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or in the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0037] Figure 1 Schematic diagram of a wafer dry stripping equipment provided in an embodiment;

[0038] Figure 2 Another schematic diagram of a wafer dry stripping equipment provided in an embodiment;

[0039] Figure 3 Schematic diagram of a wafer dry stripping method provided in an embodiment;

[0040] Figure 4 Yield test chart of photoresist formed after wafer dry stripping in an embodiment;

[0041] Figure 5 Block diagram of a wafer dry stripping system provided in an embodiment.

[0042] Explanation of reference numerals:

[0043] 10, stripping machine station; 20, preheating device; 30, purging device; 40, controller; 50, suction device; 60, sensor; 70, wafer handling device; 110, first stripping machine station; 120, first preheating device; 130, first purging device; 150, first suction device; 160, first sensor; 170, first wafer handling device; 210, second stripping machine station; 220, second preheating device; 230, second purging device; 250, second suction device; 260, second sensor; 270, second wafer handling device. Detailed implementation manners

[0044] To facilitate the understanding of the present disclosure, the present disclosure will be described more comprehensively with reference to the relevant drawings. Preferred embodiments of the present disclosure are given in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present disclosure more thorough and comprehensive.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present disclosure belongs. The terms used in the specification of the present disclosure herein are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0046] As described in the background art, after performing a degumming process on a wafer, condensed water may adhere to the surface of the wafer. The inventors of the present disclosure analyzed that condensed water may adhere to the surface of the wafer after performing a degumming process on the wafer and believed that:

[0047] Ashing to remove photoresist on the wafer surface is carried out in a dry stripping machine tool. The dry stripping machine tool can oxidize (O2 treatment) the wafer surface at a relatively low temperature and time, which helps to improve the adhesion of the photoresist. Commonly used dry ashing methods for stripping include high-dose ion implantation stripping and oxidation stripping. Water vapor is generated during the oxidation stripping process, and volatile substances are generated during the high-dose ion implantation stripping process. The volatile substances will dissociate in the stripping machine tool to generate a large amount of water vapor, forming a large amount of water vapor in the stripping machine tool environment.

[0048] The reaction formula for oxidation stripping is: O2 + nCXHY (Photoresist) → CO2 + H2O.

[0049] In order to reduce the photoresist residue after stripping after high-dose ion implantation in advanced process technologies, a mixed gas mainly composed of hydrogen is usually used as the process gas.

[0050] The reaction formula for high-dose ion implantation stripping is: H2 + nC X H Y (Photoresist) → nC X H Y (Volatile substances).

[0051] However, high-dose ion implantation stripping and oxidation stripping are usually carried out in the same dry stripping machine tool, and a large amount of water vapor is formed in the stripping machine tool environment. The water vapor will form condensation after being heated in the cavity environment and adhere to the gas distributor (Grid) on the top of the cavity. If the process of oxidizing the wafer surface is mixed and run after the high-energy ion implantation stripping process, the previously formed condensation water will fall and adhere to the wafer surface, affecting the surface characteristics of the wafer, and thus affecting the subsequent process of coating photoresist on the wafer surface (PR Coating). After coating photoresist on the wafer surface and baking and drying the photoresist (PRbaking), the photoresist in the water vapor area will explode and crack with heating, resulting in photoresist damage (PR damage), affecting the photoresist development quality.

[0052] According to an exemplary embodiment, the present disclosure provides a wafer dry stripping device, such as Figure 1As shown, the dry wafer degumming equipment includes a degumming machine table 10, a preheating device 20, a purging device 30, and a controller 40. The degumming machine table 10 is used to perform the wafer degumming process; the preheating device 20 is connected to the degumming machine table 10. The preheating device 20 can be arranged outside the degumming machine table 10 or inside the degumming machine table 10. The preheating device 20 is used to preheat the degumming machine table 10 to remove the water vapor inside the degumming machine table 10; the purging device 30 is connected to the degumming machine table 10. The purging device 30 is used to introduce a first gas into the degumming machine table 10 to purge and remove the water vapor inside the degumming machine table 10; the controller 40 is respectively connected to the degumming machine table 10, the preheating device 20, and the purging device 30. The controller 40 is used to control the parameters of the preheating device 20 for preheating the degumming machine table 10 and the parameters of the purging device 30 for purging the degumming machine table 10 to remove the water vapor inside the degumming machine table 10, ensuring that the internal environment of the degumming machine table 10 is dry without water vapor, and avoiding the water vapor inside the degumming machine table 10 from adhering to the surface of the wafer to be degummed when the degumming machine table 10 performs the degumming process on the wafer.

[0053] The dry wafer degumming equipment of this embodiment includes a degumming machine table 10, a preheating device 20, a purging device 30, and a controller 40. The controller 40 controls the preheating device 20 to perform preheating treatment on the degumming machine table 10, and controls the purging device 30 to introduce a first gas into the degumming machine table 10 to purge and remove the water vapor inside the degumming machine table 10, avoiding the residual water vapor inside the degumming machine table 10 from adhering to the surface of the wafer during the wafer degumming process, affecting the surface characteristics of the wafer, and improving the problem of damage to the photoresist layer formed on the wafer surface subsequently.

[0054] In some embodiments, as Figure 1 shown, the dry wafer degumming equipment further includes a suction device 50. The suction device 50 is respectively connected to the degumming machine table 10 and the controller 40. The suction device 50 is used to perform vacuum pumping on the degumming machine table 10 to suck and remove the water vapor inside the degumming machine table 10. The controller 40 controls the suction device 50 to perform vacuum pumping on the degumming machine table 10 to suck and remove the water vapor inside the degumming machine table 10, ensuring the effective removal of the water vapor and the dryness of the internal environment of the degumming machine table 10, thereby improving the stability of the degumming process and the quality of the wafer.

[0055] For the dry stripping equipment of wafers in this embodiment, before the stripping machine 10 is used to perform the wafer stripping process, the controller 40 starts the preheating device 20 and controls the preheating device 20 to perform preheating treatment on the stripping machine 10, so that the condensed water in the stripping machine 10 is heated to form gaseous water vapor; the controller 40 starts the purging device 30 to introduce a first gas into the stripping machine 10 for purging to purge and remove the water vapor in the stripping machine 10, and the controller 40 starts the suction device 50 to perform vacuum pumping on the stripping machine 10 to suction and remove the water vapor in the stripping machine 10, so as to completely remove the water vapor in the stripping machine 10, avoid the water vapor in the stripping machine 10 from condensing into condensed water again and affecting the surface characteristics of the stripped wafer, and avoid affecting the quality of the photoresist formed on the wafer.

[0056] In some embodiments, during the process of the preheating device 20 performing preheating treatment on the stripping machine 10, the controller 40 controls the purging device 30 and the suction device 50 to start alternately. After the purging device 30 introduces a first gas into the stripping machine 10 for purging, the suction device 50 performs vacuum pumping on the stripping machine 10 to remove the gas in the stripping machine 10 and suction away the water vapor in the stripping machine 10. Continue to alternately introduce the first gas into the stripping machine 10 and perform the step of vacuum pumping on the stripping machine 10 until the water vapor content in the stripping machine 10 is reduced to meet the set standard, and the controller 40 controls the preheating device 20, the purging device 30 and the suction device 50 to stop.

[0057] Among them, the set standard of the water vapor content can be uploaded to the controller 40 by a third party, or the controller 40 can set it according to historical data.

[0058] In some embodiments, as Figure 1 shown, the dry stripping equipment of wafers further includes a sensor 60. The sensor 60 is arranged inside the stripping machine 10. The sensor 60 is in signal connection with the controller 40. The sensor 60 is used to monitor the water vapor content in the stripping machine 10 and transmit it to the controller 40.

[0059] The controller 40 adjusts the parameters of the preheating device 20 for performing preheating treatment and the purging parameters of the purging device 30 to the stripping machine 10 according to the water vapor content in the stripping machine 10.

[0060] The sensor 60 monitors the water vapor content in the stripping machine 10 in real time and transmits the data of the water vapor content in the stripping machine 10 to the controller 40. After receiving the water vapor content data transmitted by the sensor 60, the controller 40 adjusts the parameters for the preheating device 20 to perform preheating treatment based on the water vapor content data, such as including preheating temperature, preheating duration, etc.; the controller 40 also adjusts the purging parameters of the purging device 30 to the stripping machine 10 to remove the residual gas and moisture in the stripping machine 10. By way of example, the purging parameters may include the flow rate, purging pressure, and purging duration of the purging gas, etc.

[0061] In this embodiment, the controller 40 also adjusts the suction parameters of the suction device 50 according to the water vapor content. The suction parameters may include suction rate, suction pressure, and suction duration, etc.

[0062] The controller 40 also controls the duration and number of times of alternately performing the purging process and the suction process to reduce the water vapor content in the stripping machine 10 to meet the set standard.

[0063] In some embodiments, as Figure 1 shown, the dry wafer stripping equipment further includes a wafer handling device 70, which is connected to the stripping machine 10. The wafer handling device 70 is used to load the virtual stripped wafer into the stripping machine 10 and unload the processed virtual stripped wafer out of the stripping machine 10.

[0064] As Figure 1 shown, the controller 40 is connected to the wafer handling device 70 for control. The controller 40 adjusts the number of virtual stripped wafers loaded into the stripping machine 10 by the wafer handling device 70 according to the water vapor content in the stripping machine 10.

[0065] The controller 40 is connected to the wafer handling device 70 for control. Before performing the preheating treatment on the stripping machine 10, the controller 40 determines the number of virtual stripped wafers to be loaded into the stripping machine 10 according to the water vapor content in the cavity of the stripping machine 10. The controller 40 controls the wafer handling device 70 to start and controls the wafer handling device 70 to transport the virtual stripped wafers into the stripping machine 10. So that during the process of the preheating device 20 performing the preheating treatment on the stripping machine 10, the virtual stripped wafers react with the water vapor in the stripping machine 10 to remove the stripping machine 10.

[0066] In this way, the dry wafer stripping equipment of this embodiment improves the processing efficiency of the equipment and the degree of intelligence of the equipment by controlling the wafer handling device 70 to load the virtual stripped wafers into the stripping machine 10.

[0067] In some embodiments, as Figure 1 shown, the wafer handling device 70 is further used to load the wafers to be stripped into the stripping machine 10 and unload the stripped wafers out of the stripping machine 10.

[0068] The water vapor content in the ashing machine 10 is reduced to meet the set standard, and the controller 40 controls the preheating device 20, the purging device 30, and the suction device 50 to stop. The controller 40 controls the wafer handling device 70 to unload the virtual ashed wafer from the ashing machine 10, and then controls the wafer handling device 70 to transfer the wafer to be ashed into the ashing machine 10, and the ashing machine 10 performs ashing treatment on the wafer to be ashed.

[0069] In some embodiments, the dry wafer ashing equipment of the present embodiment, such as Figure 2 As shown, the dry wafer ashing equipment includes a first ashing machine 110, a first preheating device 120, a first purging device 130, a second ashing machine 210, a second preheating device 220, a second purging device 230, and a controller 40; the first ashing machine 110 is used to perform high-dose ion implantation ashing process; the first preheating device 120 is connected to the first ashing machine 110, and the first preheating device 120 is used to preheat the first ashing machine 110; the first purging device 130 is connected to the first ashing machine 110, and the first purging device 130 is used to introduce gas into the first ashing machine 110 to purge and remove the water vapor in the first ashing machine 110; the second ashing machine 210 is used to perform oxidation ashing process; the second preheating device 220 is connected to the second ashing machine 210, and the second preheating device 220 is used to preheat the second ashing machine 210; the second purging device 230 is connected to the second ashing machine 210, and the second purging device 230 is used to introduce gas into the second ashing machine 210 to purge and remove the water vapor in the second ashing machine 210; the controller 40 is respectively connected to the first ashing machine 110, the first preheating device 120, the first purging device 130, the second ashing machine 210, the second preheating device 220, and the second purging device 230 for control connection.

[0070] Such as Figure 2 As shown, the dry wafer ashing equipment further includes a first suction device 150, and the first suction device 150 is respectively connected to the first ashing machine 110 and the controller 40. The first suction device 150 is used to perform vacuum pumping on the first ashing machine 110 to suck and remove the water vapor in the first ashing machine 110.

[0071] The dry wafer ashing equipment further includes a second suction device 250, and the second suction device 250 is respectively connected to the second ashing machine 210 and the controller 40. The second suction device 250 is used to perform vacuum pumping on the second ashing machine 210 to suck and remove the water vapor in the second ashing machine 210.

[0072] Such as Figure 2As shown, the dry wafer de-glueing device further includes a first sensor 160 disposed inside the first de-glueing machine stage 110. The first sensor 160 is in signal connection with the controller 40, and is used for monitoring the water vapor content inside the first de-glueing machine stage 110 and transmitting it to the controller 40.

[0073] The dry wafer de-glueing device further includes a second sensor 260 disposed inside the second de-glueing machine stage 210. The second sensor 260 is in signal connection with the controller 40, and is used for monitoring the water vapor content inside the second de-glueing machine stage 210 and transmitting it to the controller 40.

[0074] As Figure 2 shown, the dry wafer de-glueing device further includes a first wafer handling device 170 connected to the first de-glueing machine stage 110. The first wafer handling device 170 is used for loading the virtual de-glueing wafer into the first de-glueing machine stage 110 and unloading the processed virtual de-glueing wafer out of the first de-glueing machine stage 110.

[0075] The dry wafer de-glueing device further includes a second wafer handling device 270 connected to the second de-glueing machine stage 210. The second wafer handling device 270 is used for loading the virtual de-glueing wafer into the second de-glueing machine stage 210 and unloading the processed virtual de-glueing wafer out of the second de-glueing machine stage 210.

[0076] In the dry wafer de-glueing device of this embodiment, the high-dose ion implantation de-glueing process and the oxidation de-glueing process are respectively executed by the independent first de-glueing machine stage 110 and the second de-glueing machine stage 210, which can avoid the problem of water vapor interference generated when the high-dose ion implantation de-glueing process and the oxidation de-glueing process are carried out in the same machine stage. The controller 40 controls the first preheating device 120 and the first purging device 130 to remove the water vapor inside the first de-glueing machine stage 110, and controls the second preheating device 220 and the second purging device 230 to remove the water vapor inside the second de-glueing machine stage 210, ensuring that the water vapor content inside the first de-glueing machine stage 110 and the second de-glueing machine stage 210 meets the set standard, so that both the ion implantation de-glueing process and the oxidation de-glueing process can be carried out for de-glueing treatment in a dry and clean machine stage, avoiding the influence of condensed water droplets falling on the wafer surface and improving the problem of damage to the photoresist layer formed on the wafer surface subsequently.

[0077] According to an exemplary embodiment, the present disclosure provides a dry wafer de-glueing method. The dry wafer de-glueing method of this embodiment is executed by using the dry wafer de-glueing device of the above embodiment. As Figure 3 shown, before performing the de-glueing process on the wafer to be de-glued, the dry wafer de-glueing method of this embodiment includes the following steps:

[0078] Step S101: loading a virtual debonding wafer into the debonding machine 10, and preheating the debonding machine 10 at a first temperature;

[0079] Among them, the virtual debonding wafer is a wafer that is not used for actual production (or called a test wafer, a fake wafer). For example, the virtual debonding wafer can be a silicon wafer, a wafer with a silicon oxide surface layer, and a wafer with a photoresist layer on the surface layer. The controller 40 controls the preheating device 20 to preheat the debonding machine 10 at a first temperature. The first temperature is determined according to the equipment requirements and process parameters. The condensed water in the debonding machine 10 is heated to form water vapor, and the water vapor reacts with the virtual debonding wafer to remove the water vapor in the debonding machine 10.

[0080] Step S102 : introducing a first gas into the debonding machine 10 to purge and remove moisture in the debonding machine 10 .

[0081] The controller 40 controls the purge device 30 to introduce a first gas (the first gas may include an inert gas such as nitrogen or argon) into the debonding machine 10, and the first gas is used to purge and remove water vapor and other possible residual contaminants in the debonding machine 10. This ensures that the wafer will not be affected by water vapor or other contaminants during the debonding process, and prevents these impurities from adhering to the wafer surface and affecting the surface characteristics of the wafer and subsequent process steps.

[0082] The wafer dry stripping method of the present embodiment uses a virtual stripping wafer to preheat and purge the stripping machine 10 before wafer stripping to remove water vapor in the stripping machine 10, thereby preventing residual water vapor in the stripping machine 10 from adhering to the surface of the wafer during the wafer stripping process and affecting the surface properties of the wafer, thereby improving the problem of damage to the photoresist layer subsequently formed on the wafer surface.

[0083] In some embodiments, the surface of the virtual debonded wafer is a single silicon substance, and the surface of the virtual debonded wafer is not patterned; the first temperature is 150°C-200°C. For example, the first temperature can be 150°C, 155°C, 160°C, 165°C, 170°C, 175°C, 180°C, 185°C, 190°C, 195°C or 200°C.

[0084] During the preheating process of the debonding machine 10, the condensed water in the debonding machine 10 is heated to form water vapor, and the vapor and the silicon of the virtual debonding wafer can react: H2O+ Si → SiO2+ H2.

[0085] Thus, during the preheating process of the degumming machine 10, part of the water vapor in the degumming machine 10 can be removed through the silicon reaction of the virtual degumming wafer, reducing the water vapor content in the degumming machine 10, making the internal environment of the degumming machine 10 dry, and improving the influence of the water vapor inside the degumming machine 10 on the surface quality of the subsequent wafer to be degummed.

[0086] In some embodiments, the first gas includes a mixture of oxygen and nitrogen, and the ratio of oxygen to nitrogen is 5 - 15:1. For example, the ratio of oxygen to nitrogen in the first gas can be 5:1, 6:1, 7:1, 8:1, 9:1, 10:1, 11:1, 12:1, 13:1, 14:1, or 15:1.

[0087] In this embodiment, the ratio of oxygen to nitrogen in the first gas is 9:1.

[0088] Refer to Figure 4 As shown, after preheating the degumming machine 10 at the first temperature in the first gas atmosphere, the water vapor content in the degumming machine 10 is reduced to the set standard. After reducing the water vapor content in the degumming machine 10 to the set standard, the processed virtual degumming wafer is unloaded from the degumming machine 10. The wafer to be degummed is loaded into the degumming machine 10, and the degumming process is performed on the wafer to be degummed at the first temperature, forming a photoresist on the surface of the degummed wafer, and the yield test of the photoresist is obtained Figure 4 As Figure 4 shown, in this embodiment, the damage rate of the photoresist formed again drops to 0.8%.

[0089] In this embodiment, while preheating the degumming machine 10, the first gas including oxygen is introduced into the cavity. There is a large amount of water vapor and oxygen in the degumming machine 10 at the same time. In this cavity environment, the water vapor will decompose into hydroxyl radicals (·OH), and the diffusion rate of hydroxyl radicals in silicon is faster. Hydroxyl radicals are more likely to combine with bare silicon (bareSi) to form silicon dioxide (SiO2). The reaction rate of water vapor with the silicon of the virtual degumming wafer to remove water vapor is faster and the effect is better, and more water vapor in the degumming machine 10 can be removed during the preheating process.

[0090] In one of the embodiments, while preheating the degumming machine 10, a vacuum pumping process is performed on the degumming machine 10 to suck and remove the water vapor in the degumming machine 10.

[0091] During the preheating process or after the preheating process, the controller 40 activates the suction device 50 to perform a vacuum pumping process on the degumming machine 10, sucking and removing the water vapor in the degumming machine 10, so as to completely remove the water vapor in the degumming machine 10, avoid the water vapor in the degumming machine 10 from condensing into condensed water again and affecting the surface characteristics of the wafer after degumming, and avoid affecting the quality of the photoresist formed on the wafer.

[0092] In some embodiments, during the process of the preheating device 20 preheating the degumming machine 10, the controller 40 controls the purge device 30 and the suction device 50 to be alternately activated. After the purge device 30 purges the degumming machine 10 by introducing a first gas, the suction device 50 performs a vacuum pumping process on the degumming machine 10 to remove the gas in the degumming machine 10 and suck away the water vapor in the degumming machine 10. Continue to alternately introduce the first gas into the degumming machine 10 and perform the vacuum pumping process on the degumming machine 10 until the water vapor content in the degumming machine 10 is reduced to meet the set standard, and then the controller 40 controls the preheating device 20, the purge device 30 and the suction device 50 to stop.

[0093] The dry wafer degumming method of the present disclosure effectively removes the water vapor and contaminants in the degumming machine 10 by loading a virtual degumming wafer for preheating and purging before wafer degumming, improves the surface characteristics of the wafer, reduces the risk of damage to the photoresist layer, and improves the quality and production efficiency of the wafer. This pretreatment process is of great significance for ensuring the smooth progress of subsequent wafer processes.

[0094] In a third aspect, the present disclosure provides a dry wafer degumming system, which may be a terminal. The dry wafer degumming system includes a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, it implements the steps of the intelligent temperature control method of the dry wafer degumming system in the above embodiments.

[0095] The internal structure diagram of the dry wafer degumming system can be as Figure 5As shown. The dry wafer degluing system includes a processor, a memory, an input / output interface (Input / Output, abbreviated as I / O), and a communication interface. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface is connected to the system bus through the input / output interface. Among them, the processor of the dry wafer degluing system is used to provide computing and control capabilities. The memory of the dry wafer degluing system includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the dry wafer degluing system is used to store temperature control data. The input / output interface of the dry wafer degluing system is used to exchange information between the processor and external devices. The communication interface of the dry wafer degluing system is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, it implements an intelligent temperature control method for a dry wafer degluing system.

[0096] Those skilled in the art can understand that Figure 5 the structure shown in is only a block diagram of some structures related to the solution of the present disclosure, and does not constitute a limitation on the dry wafer degluing system to which the solution of the present disclosure is applied. The specific dry wafer degluing system may include more or fewer components than those shown in the figure, or combine some components, or have a different component arrangement.

[0097] It should be noted that the information (including but not limited to the information of the dry wafer degluing system) and data (including but not limited to the data for analysis, the stored data, the displayed data, etc.) involved in the present disclosure are all information and data authorized by the user or fully authorized by all parties, and the collection, use, and processing of the relevant data need to comply with the relevant regulations.

[0098] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided by the present disclosure can include at least one of non-volatile and volatile memories. Non-volatile memories can include read-only memory (ROM), magnetic tapes, floppy disks, flash memories, optical memories, high-density embedded non-volatile memories, resistive random access memories (ReRAMs), magnetoresistive random access memories (MRAMs), ferroelectric random access memories (FRAMs), phase change memories (PCMs), graphene memories, etc. Volatile memories can include random access memory (RAM) or external cache memories, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided by the present disclosure can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The controllers involved in the embodiments provided by the present disclosure can be general-purpose processors, central processors, graphics processors, digital signal processors, programmable logics, data processing logics based on quantum computing, etc., without limitation.

[0099] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0100] The above embodiments only represent several implementation manners of the present disclosure. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present disclosure, several modifications and improvements can still be made, and these all belong to the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure should be subject to the appended claims.

Claims

1. A wafer dry stripping device, characterized in that, include: A debonding machine, used to perform wafer debonding process; A preheating device connected to the degumming machine, the preheating device is used to preheat the degumming machine; A purge device connected to the degumming machine, the purge device is used to introduce a first gas into the degumming machine to purge and remove water vapor in the degumming machine; A controller is respectively connected to the degumming machine, the preheating device, and the purging device.

2. The wafer dry stripping equipment according to claim 1, characterized in that, Also includes: The suction device is connected to the degumming machine and the controller respectively, and is used to perform vacuum exhaust treatment on the degumming machine to remove water vapor in the degumming machine by suction.

3. The wafer dry stripping equipment according to claim 1, characterized in that, Also includes: A sensor is arranged inside the degumming machine, the sensor is connected to the controller signal, and the sensor is used to monitor the water vapor content in the degumming machine and transmit it to the controller; The controller adjusts the parameters of the preheating device for performing preheating treatment and the purging parameters of the purging device to the degumming machine according to the water vapor content in the degumming machine.

4. The wafer dry stripping equipment according to claim 3, characterized in that, Also includes: A wafer transport device is connected to the debonding machine, and is used to load the virtual debonding wafer into the debonding machine, and unload the processed virtual debonding wafer from the debonding machine.

5. The wafer dry stripping equipment according to claim 4, wherein, The controller is connected to the wafer handling device for controlling, and the controller adjusts the number of the virtual debonding wafers loaded into the debonding machine by the wafer handling device according to the water vapor content in the debonding machine.

6. The wafer dry stripping equipment according to claim 1, wherein The wafer dry degumming equipment comprises: The first debonding machine is used to perform a high-dose ion implantation debonding process; A first preheating device, connected to the first degumming machine, and the first preheating device is used to preheat the first degumming machine; a first purge device connected to the first degumming machine, the first purge device being used to introduce gas into the first degumming machine to purge and remove water vapor in the first degumming machine; The second debonding machine is used to perform an oxidation debonding process; A second preheating device, connected to the second degumming machine, the second preheating device is used to preheat the second degumming machine; A second purge device is connected to the second degumming machine, and the second purge device is used to introduce gas into the second degumming machine to purge and remove water vapor in the second degumming machine; The controller is respectively controlled and connected with the first degumming machine, the first preheating device, the first purging device, the second degumming machine, the second preheating device and the second purging device.

7. A method for dry stripping of a wafer, characterized in that, Before performing the stripping process on the wafer to be stripped, the following steps are required: Loading a virtual debonding wafer in a debonding machine, and preheating the debonding machine at a first temperature; A first gas is introduced into the degumming machine to purge and remove water vapor in the degumming machine.

8. The dry wafer de-gumming method according to claim 7, characterized in that, The surface of the virtual debonded wafer is silicon, and the surface of the virtual debonded wafer is not subjected to patterning treatment; The first temperature is 150°C-200°C.

9. The dry wafer de-glueing method according to claim 7, characterized in that, The first gas includes a mixture of oxygen and nitrogen, and the ratio of oxygen to nitrogen is 5-15:

1.

10. The dry wafer de-glueing method according to claim 7, characterized in that, While preheating the degumming machine, perform a vacuum pumping process on the degumming machine to suck out the water vapor inside the degumming machine.

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