A crystal growth furnace model construction method and electronic equipment

Abstract

The present invention provides a method for constructing a model of a crystal growth furnace and an electronic device, relating to the field of crystal growth technology. The method comprises: constructing a first three-dimensional graphic corresponding to a heater based on a heater; constructing a second three-dimensional graphic corresponding to an electrode provided in conjunction with the heater and a first distance between a first central axis of the heater and a second central axis of the electrode; constructing a two-dimensional heater model corresponding to the heater based on the first three-dimensional graphic, and constructing a two-dimensional electrode model corresponding to the electrode based on the second three-dimensional graphic; obtaining a first power density of the heater and a second power density of the electrode; loading the first power density into the two-dimensional heater model and the second power density into the two-dimensional electrode model; and performing a numerical simulation of the crystal growth furnace based on the two-dimensional heater model and the two-dimensional electrode model. Embodiments of the present invention improve the accuracy of simulation results obtained by numerically simulating a crystal growth furnace.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and in particular to a model building method and electronic equipment of a crystal growth furnace. Background Art

[0002] During the crystal growth process using a resistance heating furnace, accurate control of temperature and heat distribution can be achieved by adjusting the heating power of the heating system of the resistance heating furnace, and the crystal growth conditions can be optimized by optimizing the heating power of the heating system in the resistance heating furnace.

[0003] In related technologies, numerical simulations of crystal growth conditions in resistance-heating furnaces are typically performed using either three-dimensional or two-dimensional numerical simulations. However, in three-dimensional simulations, the spatial structure of the resistance-heating furnace must be fully described, and a large number of grids must be divided to discretize the calculation area. This results in a complex modeling process, high computational effort, and low computational efficiency. In two-dimensional simulations, the heaters of the resistance-heating furnace are often simply simplified into a planar structure, resulting in low simulation accuracy. Summary of the Invention

[0004] The embodiments of the present invention provide a model construction method and electronic equipment for a crystal growth furnace, which can solve the problem that related technologies cannot balance computational efficiency and simulation result accuracy during numerical simulation of a crystal growth furnace.

[0005] In a first aspect, an embodiment of the present invention provides a method for constructing a model of a crystal growth furnace, the method comprising:

[0006] According to the heater in the crystal growth furnace, a first three-dimensional figure corresponding to the heater is constructed; the first three-dimensional figure has two-dimensional axial symmetry and the volume of the first three-dimensional figure is equal to the volume of the heater;

[0007] constructing a second three-dimensional graphic corresponding to the electrode according to an electrode provided in cooperation with the heater in the crystal growth furnace and a first distance between a first central axis of the heater and a second central axis of the electrode; the second three-dimensional graphic having two-dimensional axial symmetry and a volume of the second three-dimensional graphic being equal to a volume of the electrode;

[0008] constructing a two-dimensional heater model corresponding to the heater according to the first three-dimensional graphic, and constructing a two-dimensional electrode model corresponding to the electrode according to the second three-dimensional graphic;

[0009] obtaining a first power density of the heater and a second power density of the electrode;

[0010] loading the first power density to the two-dimensional heater model, and loading the second power density to the two-dimensional electrode model;

[0011] The crystal growth furnace is numerically simulated based on the two-dimensional heater model and the two-dimensional electrode model.

[0012] In a second aspect, an embodiment of the present invention provides an electronic device comprising: a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the model building method of the crystal growth furnace as described in any one of the above items when executing the computer program.

[0013] The model construction method of the crystal growth furnace provided by the embodiment of the present invention can improve the proximity between the two-dimensional heater model constructed according to the first three-dimensional graphic and the heater by constructing a first three-dimensional graphic corresponding to the heater, so that the first three-dimensional graphic has two-dimensional axial symmetry and the volume of the first three-dimensional graphic is equal to the volume of the heater, thereby facilitating improving the proximity between the simulation results obtained by numerical simulation of the crystal growth furnace based on the two-dimensional heater model and the actual crystal growth conditions in the crystal growth furnace; further, the embodiment of the present invention also constructs a second three-dimensional graphic corresponding to the electrode based on the electrode arranged in conjunction with the heater in the crystal growth furnace, and the first distance between the first center axis of the heater and the second center axis of the electrode, so that the second three-dimensional graphic has two-dimensional axial symmetry and the volume of the second three-dimensional graphic is equal to the volume of the electrode The volume of the electrode can improve the degree of proximity between the two-dimensional electrode model constructed according to the second three-dimensional graphic and the electrode. In the process of numerical simulation of the crystal growth furnace, not only the influence of the heater in the crystal growth furnace on the crystal growth conditions is considered, but also the influence of the electrode arranged in conjunction with the heater in the crystal growth furnace on the crystal growth conditions is considered, which is conducive to further improving the degree of proximity between the simulation results obtained by numerical simulation of the crystal growth furnace and the actual crystal growth conditions in the crystal growth furnace. While reducing the amount of calculation for numerical simulation of the crystal growth furnace based on the two-dimensional heater model and the two-dimensional electrode model and improving the calculation efficiency, it can also improve the accuracy of the simulation results obtained by numerical simulation of the crystal growth furnace, thereby improving the reliability of the optimization control process of the crystal growth process in the crystal growth furnace according to the simulation results. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a flow chart of the steps of a method for building a model of a crystal growth furnace provided by the present invention;

[0015] Figure 2 This is a schematic diagram of the structure of a heater provided by the present invention. Figure 1 ;

[0016] Figure 3This is a schematic diagram of the structure of a heater provided by the present invention. Figure 2 ;

[0017] Figure 4 This is a schematic diagram of the structure of a heater provided by the present invention. Figure 3 ;

[0018] Figure 5 This is a schematic diagram of the structure of a heater provided by the present invention. Figure 4 ;

[0019] Figure 6 This is a schematic diagram of a three-dimensional solid ring structure provided by the present invention. Figure 1 ;

[0020] Figure 7 This is a schematic diagram of a three-dimensional solid ring structure provided by the present invention. Figure 2 ;

[0021] Figure 8 This is a schematic diagram of the structure of a first three-dimensional graphic provided by the present invention. Figure 1 ;

[0022] Figure 9 This is a schematic diagram of the structure of a first three-dimensional graphic provided by the present invention. Figure 2 ;

[0023] Figure 10 This is a schematic diagram of the structure of a heater provided by the present invention. Figure 5 ;

[0024] Figure 11 This is a schematic diagram of the structure of a heater provided by the present invention. Figure 6 ;

[0025] Figure 12 This is a schematic diagram of a three-dimensional solid ring structure provided by the present invention. Figure 3 ;

[0026] Figure 13 This is a schematic diagram of a three-dimensional solid ring structure provided by the present invention. Figure 4 ;

[0027] Figure 14 is a schematic structural diagram of a second three-dimensional graphic provided by the present invention;

[0028] Figure 15 This is a schematic diagram of a structure of a combined three-dimensional graphic provided by the present invention. Figure 1 ;

[0029] Figure 16 This is a schematic diagram of a structure of a combined three-dimensional graphic provided by the present invention. Figure 2 ;

[0030] Figure 17This is a schematic diagram of the cross-sectional structure of a combined three-dimensional graphic provided by the present invention. Figure 1 ;

[0031] Figure 18 This is a schematic diagram of the structure of a two-dimensional heater model and a two-dimensional electrode model provided by the present invention. Figure 1 ;

[0032] Figure 19 This is a schematic diagram of the cross-sectional structure of a combined three-dimensional graphic provided by the present invention. Figure 2 ;

[0033] Figure 20 This is a schematic diagram of the structure of a two-dimensional heater model and a two-dimensional electrode model provided by the present invention. Figure 2 ;

[0034] Figure 21 This is a logic block diagram of a model building device for a crystal growth furnace provided by the present invention.

[0035] Reference numerals:

[0036] 10 - heater; 101 - coaxial ring; 11 - first three-dimensional figure; 111 - three-dimensional solid ring; 112 - target gap; 1111 - solid ring; 20 - electrode; 21 - second three-dimensional figure; 31 - two-dimensional heater model; 32 - two-dimensional electrode model. DETAILED DESCRIPTION

[0037] To make the above-mentioned objects, features, and advantages of the present invention more clearly understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0038] Method Example

[0039] Reference Figure 1 , shows a flow chart of the steps of a method for constructing a model of a crystal growth furnace provided by the present invention, and the method may specifically include the following steps:

[0040] Step S101 : constructing a first three-dimensional graphic corresponding to a heater in a crystal growth furnace.

[0041] Step S102: construct a second three-dimensional graphic corresponding to the electrode according to the electrode provided in cooperation with the heater in the crystal growth furnace and a first distance between a first central axis of the heater and a second central axis of the electrode.

[0042] Step S103: constructing a two-dimensional heater model corresponding to the heater according to the first three-dimensional graphic, and constructing a two-dimensional electrode model corresponding to the electrode according to the second three-dimensional graphic.

[0043] Step S104: Acquire a first power density of the heater and a second power density of the electrode.

[0044] Step S105 : loading the first power density into the two-dimensional heater model, and loading the second power density into the two-dimensional electrode model.

[0045] Step S106 : performing numerical simulation on the crystal growth furnace based on the two-dimensional heater model and the two-dimensional electrode model.

[0046] The model construction method of the crystal growth furnace provided in the embodiment of the present invention can be applied to any electronic device capable of performing numerical simulation, including but not limited to mobile terminals such as laptop computers, personal digital assistants (PDAs), handheld devices, computing devices, and fixed terminals such as digital TVs and desktop computers.

[0047] In the application scenario of the embodiment of the present invention, the model construction of the crystal growth furnace is mainly aimed at the model construction of the heating system of the crystal growth furnace; the heating system of the crystal growth furnace includes a heater and electrodes arranged in conjunction with the heater.

[0048] The crystal growth furnace is specifically a resistance heating furnace. For example, the crystal growth furnace can be used to grow single crystal silicon by the Czochralski method and to grow silicon carbide by the liquid phase method.

[0049] The heater includes a heater arranged at the bottom of the crucible in the crystal growth furnace and a heater surrounding the side wall of the crucible. Figure 2 , showing a schematic structural diagram of a heater provided by the present invention Figure 1 ,like Figure 2 As shown, Figure 2 The figure shows a heater 10 disposed at the bottom of a crucible in a crystal growth furnace, and the heater 10 disposed at the bottom of the crucible is a ring-shaped structure formed by serpentine routing of the heating circuit; Figure 3 , showing a schematic structural diagram of a heater provided by the present invention Figure 2 , Figure 3 The heater 10 is shown as being arranged on the side wall of the crucible. The heater 10 is a cylindrical structure formed by serpentine-shaped heating circuits that surround the outer wall of the crucible.

[0050] The number of electrodes provided in conjunction with the heater is 2, which are respectively used to connect the positive electrode and the negative electrode of the heating power supply in the crystal growth furnace. Specifically, the electrodes provided in conjunction with the heater can be cylindrical electrodes. Figure 4 , showing a schematic structural diagram of a heater provided by the present invention Figure 3 , the electrodes 20 provided in conjunction with the heater 10 are two electrode columns provided on the heater 10 having a circular structure; Figure 5 , showing a schematic structural diagram of a heater provided by the present invention Figure 4 The electrodes 20 provided in conjunction with the heater 10 are two electrode columns provided on the heater 10 having a cylindrical structure.

[0051] It should be noted that the heater described in steps S101 to S106 may be a heater disposed at the bottom of the crucible in the crystal growth furnace, or a heater surrounding the side wall of the crucible, which is not specifically limited in the embodiment of the present invention.

[0052] In step S101, the electronic device can construct a three-dimensional graphic with two-dimensional axial symmetry and equal to the volume of the heater based on the volume of the heater in the crystal growth furnace, and determine the three-dimensional graphic as a first three-dimensional graphic; wherein, the appearance shape of the first three-dimensional graphic can be the same as or different from the heater. The embodiment of the present invention does not specifically limit the appearance shape of the first three-dimensional graphic. The first three-dimensional graphic only needs to have two-dimensional axial symmetry and a volume equal to the volume of the heater.

[0053] Among them, the first three-dimensional figure has two-dimensional axial symmetry means that the first three-dimensional figure has two-dimensional axial symmetry with the fourth central axis of the first three-dimensional figure as the center; the fourth central axis is the central axis of the first three-dimensional figure, and the fourth central axis is parallel to the first central axis.

[0054] In step S102, the electronic device can obtain the volume of the electrode arranged in conjunction with the heater in the crystal growth furnace, and the first distance between the first central axis of the heater and the second central axis of the electrode; then, based on the volume of the electrode and the first distance, with the fourth central axis of the first three-dimensional figure as the center, construct a three-dimensional ring with a distance from the fourth central axis equal to the first distance and a volume equal to the volume of the electrode, and determine the three-dimensional ring as the second three-dimensional figure corresponding to the electrode.

[0055] In an embodiment of the present invention, the distance between the second three-dimensional figure and the fourth central axis is equal to the first distance. Specifically, in some embodiments, the distance between the second three-dimensional figure and the fourth central axis being equal to the first distance means that the shortest distance between the inner wall of the second three-dimensional figure and the fourth central axis is equal to the first distance; in other embodiments, the distance between the second three-dimensional figure and the fourth central axis being equal to the first distance means that the shortest distance between the outer wall of the second three-dimensional figure and the fourth central axis is equal to the first distance; in still other embodiments, the distance between the second three-dimensional figure and the fourth central axis being equal to the first distance means that the shortest distance between the centerline of the side wall of the second three-dimensional figure and the fourth central axis is equal to the first distance.

[0056] The thickness of the sidewall of the second three-dimensional figure is uniform, that is, the thickness of any two points of the sidewall of the second three-dimensional figure is equal. The thickness of the sidewall of the second three-dimensional figure refers to the dimension of the sidewall of the second three-dimensional figure in a direction perpendicular to the fourth central axis.

[0057] It should be noted that the volume of the electrode provided in conjunction with the heater in the crystal growth furnace obtained by the electronic device refers to the total volume of the two electrodes provided in conjunction with the heater.

[0058] Reference Figure 4 The first central axis and the second central axis refer to central axes parallel to the height direction of the electrode 20; the first distance is the shortest distance between the first central axis and the second central axis.

[0059] It can be understood that the second three-dimensional figure constructed by step S102 is a three-dimensional ring with two-dimensional axial symmetry and a volume equal to the volume of the second three-dimensional figure, and the central axis of the second three-dimensional figure coincides with the fourth central axis, wherein the second three-dimensional figure has two-dimensional axial symmetry means that the second three-dimensional figure has two-dimensional axial symmetry with the fourth central axis as the center.

[0060] In an embodiment of the present invention, a second three-dimensional graphic having two-dimensional axial symmetry and equal to the volume of the electrode is constructed through step S102 according to the volume of the electrode provided in conjunction with the heater in the crystal growth furnace and the first distance between the first central axis and the second central axis. This is not only conducive to the construction of a two-dimensional electrode model corresponding to the electrode through step S103, but also retains the volume characteristics of the electrode in the crystal growth furnace and the positional relationship characteristics between the electrode and the heater, which is conducive to improving the reliability of the two-dimensional electrode model constructed through S103.

[0061] In step S103, the electronic device can combine the first three-dimensional graphic constructed by step S101 and the second three-dimensional graphic constructed by step S102 to obtain a combined three-dimensional graphic, in which the fourth central axis of the first three-dimensional graphic coincides with the central axis of the second three-dimensional graphic; then, the electronic device cuts the combined three-dimensional graphic along any plane where the fourth central axis is located to obtain a cross-sectional view, and uses the two-dimensional cross-sectional view of the first three-dimensional graphic in the cross-sectional view as a two-dimensional heater model, and uses the two-dimensional cross-sectional view of the second three-dimensional graphic in the cross-sectional view as a two-dimensional electrode model.

[0062] When the two-dimensional heater model and the two-dimensional electrode model are obtained through step S103, the electronic device can first execute step S104 to obtain the first power density of the heater and the second power density of the electrode, and then execute step S105 to load the first power density into the two-dimensional heater model, and load the second power density into the two-dimensional electrode model, and finally execute step S106 to perform numerical simulation of the crystal growth furnace based on the two-dimensional heater model and the two-dimensional electrode model.

[0063] Specifically, step S104 may include the following steps:

[0064] Step S1041: The electronic device calculates the heat generation of the heater and the heat generation of the electrode respectively using Maxwell's equations according to the direct current supplied to the crystal growth furnace.

[0065] Specifically, Maxwell's equations are shown in Formulas 1 to 3:

[0066] (1)

[0067] (2)

[0068] (3)

[0069] in, represents the gradient; Represents the electric displacement vector, unit: C / m 2 ; Indicates the electric field strength, unit: V / m, or N / C; Indicates magnetic induction intensity, unit: T or Wb / m 2 ; Indicates the magnetic field strength, unit: A / m; Indicates current density, unit: A / m 2 ; Indicates charge density, unit: C / m 3 ; Indicates dielectric constant, unit: F / m; Indicates magnetic permeability, unit: H / m; Indicates heat production, unit: J; Indicates volume, unit: m 3 In an embodiment of the present invention, It can represent the volume of the heater or the volume of the electrode, It can represent the heat generation of the heater or the heat generation of the electrode.

[0070] In the embodiment of the present invention, the boundary conditions of the Maxwell equations are: Ballon boundary, that is, infinite boundary conditions, and direct current in opposite directions is introduced into the inlet and outlet of the electrode.

[0071] Step S1042: The electronic device determines a first power density of the heater and a second power density of the electrode according to the heat generated by the heater and the heat generated by the electrode.

[0072] Specifically, when the heat generation of the heater and the heat generation of the electrode are calculated through step S1041, the electronic device first converts the heat generation into heating power (unit: W) to obtain the first heating power of the heater and the second heating power of the electrode; then, the electronic device determines the ratio of the first heating power of the heater to the volume of the corresponding first three-dimensional figure as the first power density of the heater, and determines the ratio of the second heating power of the electrode to the volume of the second three-dimensional figure as the second power density of the electrode.

[0073] In step S105 , the electronic device may load the first power density of the heater as a source term into the two-dimensional heater model, and load the second power density of the electrode as a source term into the two-dimensional electrode model.

[0074] Specifically, the electronic device writes the first power density of the heater obtained through step S1042 as a source item into the user-defined function (UDF) file corresponding to the two-dimensional heater model, and loads the first power density of the heater as a source item into the two-dimensional heater model by loading the UDF file; accordingly, the electronic device writes the second power density of the electrode obtained through step S1042 as a source item into the UDF file corresponding to the two-dimensional electrode model, and loads the second power density of the electrode as a source item into the two-dimensional electrode model by loading the UDF file.

[0075] In step S106, the electronic device performs numerical simulation on the crystal growth furnace based on a two-dimensional heater model loaded with a first power density and a two-dimensional electrode model loaded with a second power density to obtain simulation results; the simulation results include the temperature field, velocity field and pressure field of the crystal growth furnace.

[0076] Specifically, the electronic device obtains simulation results by calculating and solving a numerical simulation model based on a two-dimensional heater model and a two-dimensional electrode model.

[0077] The numerical simulation model includes the numerical simulation model control equation and the boundary conditions corresponding to the numerical simulation model control equation.

[0078] Among them, the control equations of the numerical simulation model include the control equations of the melt region, the control equations of the protective atmosphere region and the control equations of the solid region.

[0079] Specifically, the melt region governing equations include:

[0080] Continuity equation:

[0081] (4)

[0082] Momentum equation:

[0083] (5)

[0084] Energy equation:

[0085] (6)

[0086] in, Indicates the flow velocity of the melt, unit: m / s; Indicates the reference density of the melt, unit: kg / m 3 ; Indicates the real-time density of the melt, unit: kg / m 3 ; Indicates time, unit: s; Indicates the pressure of the melt, unit: Pa; Indicates the dynamic viscosity of the melt, unit is Pa·s; Indicates the thermal expansion coefficient of the melt, unit: K -1 ; Indicates the acceleration due to gravity, unit: m / s 2 ; Indicates the reference temperature, unit: K; Indicates the thermal conductivity of the melt, unit: W / (m·K); Indicates the specific heat capacity of the melt, unit: J / (kg·K); Indicates the real-time temperature of the melt, unit: K.

[0087] In an embodiment of the present invention, the melt may include a silicon melt.

[0088] Protective atmosphere zone control equations include:

[0089] Continuity equation:

[0090] (7)

[0091] Momentum equation:

[0092] (8)

[0093] Energy equation:

[0094] (9)

[0095] Ideal gas state equation:

[0096] (10)

[0097] in, Indicates the flow velocity of the shielding gas, unit: m / s; Indicates the reference density of the shielding gas, unit: kg / m 3 ; Indicates the real-time density of the protective gas, unit: kg / m 3 ; Indicates the pressure of the protective gas, unit: Pa; Indicates the dynamic viscosity of the shielding gas, in Pa·s; Indicates the thermal conductivity of the shielding gas, unit: W / (m·K); Indicates the specific heat capacity of the shielding gas, unit: J / (kg·K); Indicates the real-time temperature of the protective gas, unit: K; represents the ideal gas constant.

[0098] The governing equations for the solid region include:

[0099] Heat conduction governing equation:

[0100] (11)

[0101] in, Indicates the density of solid materials, unit: kg / m 3 ; Indicates the thermal conductivity of solid materials, unit: W / (m·K); Indicates the specific heat capacity of solid materials, unit: J / (kg·K); Indicates the real-time temperature of the solid material, unit: K; Indicates heat source, unit: W / m 3 .

[0102] It should be noted that, in the embodiment of the present invention, the heat source refers to the power density of the heater or the power density of the electrode.

[0103] The boundary conditions corresponding to the control equations of the numerical simulation model include: boundary conditions at the interface between solid and gas, boundary conditions at the interface between melt and gas, boundary conditions at the interface between crystal and melt, and boundary conditions at the interface between solid and melt.

[0104] The boundary conditions at the interface between solid and gas include:

[0105] No-slip boundary condition:

[0106] (12)

[0107] (13)

[0108] Coupled boundary conditions:

[0109] (14)

[0110] (15)

[0111] in, Indicates the flow velocity of solid material in the tangential direction, unit: m / s; Indicates the flow velocity of the shielding gas in the tangential direction, unit: m / s; Indicates the flow velocity of solid material in the normal direction, unit: m / s; Indicates the flow velocity of the shielding gas in the normal direction, unit: m / s; Indicates the tangent direction; Indicates the normal direction; Represents the temperature gradient of a solid material; Indicates the temperature gradient of the shielding gas; Indicates the heat radiated by the shielding gas, unit: J.

[0112] Boundary conditions at the melt-gas interface include:

[0113] Velocity boundary conditions:

[0114] (16)

[0115] (17)

[0116] (18)

[0117] Temperature boundary conditions:

[0118] (19)

[0119] (20)

[0120] in, Indicates the flow velocity of the melt in the normal direction, unit: m / s; Indicates the flow velocity of the melt in the tangential direction, unit: m / s; Represents the temperature gradient of the melt; Indicates the heat radiated by the melt, unit: J; Indicates the surface tension coefficient of the protective gas, which is -2.5×10 -4 .

[0121] Boundary conditions at the crystal-melt interface include:

[0122] The velocity boundary condition is still a no-slip boundary condition:

[0123] (twenty one)

[0124] (twenty two)

[0125] Temperature boundary conditions:

[0126] (twenty three)

[0127] (twenty four)

[0128] in, Indicates the flow velocity of the crystal in the tangential direction, unit: m / s; Indicates the flow velocity of the crystal in the normal direction, unit: m / s; Indicates the real-time temperature of the crystal, unit: K; Indicates the thermal conductivity of the crystal, unit: W / (m·K); represents the temperature gradient of the crystal; Indicates the amount of heat radiated by the crystal, unit: J.

[0129] In the embodiment of the present invention, the crystal grown by the crystal growth furnace may include but is not limited to single crystal silicon, silicon carbide, etc.

[0130] Boundary conditions at the interface between the solid and the melt, including:

[0131] The velocity boundary condition is still a no-slip boundary condition:

[0132] (25)

[0133] (26)

[0134] Temperature boundary conditions:

[0135] (27)

[0136] (28)

[0137] In an embodiment of the present invention, during the numerical simulation of a crystal growth furnace based on a two-dimensional heater model and a two-dimensional electrode model, the electronic device can control the ratio of the heating power of the heater to the heating power of the electrode to remain unchanged, and perform PID (Proportional-Integral-Derivative) adjustment on the temperature parameters in the temperature field until the temperature parameters in the temperature field reach the target temperature, and use the first heating power of the heater and the second heating power of the electrode at this time as the first target heating power of the heater and the second target heating power of the electrode obtained through numerical simulation; subsequently, in the process of performing crystal growth using the crystal growth furnace, the heating power of the heater in the crystal growth furnace can be controlled to be the first target heating power and the heating power of the electrode to be the second target heating power so that the temperature parameters of the temperature field in the crystal growth furnace reach the target temperature, thereby achieving optimization and control of the crystal growth conditions in the crystal growth furnace.

[0138] Reference Figure 2 and Figure 3 , there are gaps between the heating lines in the heater 10. In the related art, during the two-dimensional numerical simulation of the crystal growth furnace, the heater 10 is directly simplified into a plane structure, and the gaps formed between the serpentine heating lines in the heater 10 are ignored, resulting in the volume of the simplified plane structure being larger than the actual volume of the heater 10 in the crystal growth furnace. As a result, the simulation results obtained by the related art in performing two-dimensional numerical simulation of the crystal growth furnace based on the simplified plane structure seriously deviate from the actual situation of the crystal growth furnace, which in turn leads to the problem of low accuracy of the simulation results in the related art.

[0139] In an embodiment of the present invention, the first three-dimensional figure obtained through step S101 has two-dimensional axial symmetry, which can realize the two-dimensional numerical simulation of the crystal growth furnace. At the same time, controlling the volume of the first three-dimensional figure to be equal to the volume of the heater is also beneficial to improving the degree of proximity between the two-dimensional heater model constructed based on the first three-dimensional figure and the heater in the crystal growth furnace, and thus helping to improve the accuracy of the simulation results obtained by numerically simulating the crystal growth furnace through step S106.

[0140] The simulation results obtained by numerical simulation may include but are not limited to the temperature field, velocity field and pressure field in the crystal growth furnace. The heating system in the crystal growth furnace will directly affect the simulation results of the temperature field during the numerical simulation process, and the temperature field will in turn affect the velocity field and pressure field. The embodiment of the present invention controls the volume of the first three-dimensional figure to be equal to the volume of the heater, and introduces a two-dimensional electrode model corresponding to the electrode provided in conjunction with the heater to perform numerical simulation on the crystal growth furnace, fully considering the gaps in the heater and the heat dissipation problem of the electrode provided in conjunction with the heater on the temperature field simulation results, which is conducive to improving the accuracy of the temperature field simulation results obtained by the embodiment of the present invention through S106, and further conducive to improving the accuracy of the velocity field simulation results and the pressure field simulation results. When the accuracy of the simulation results is improved, the accuracy of the first target heating power of the heater and the second target heating power of the electrode determined according to the temperature field in the simulation results can be improved, which is conducive to improving the reliability and effectiveness of optimizing the control of the crystal growth conditions according to the first target heating power of the heater and the second target heating power of the electrode.

[0141] Referring to Table 1, a comparative data table showing the target heating power of the heating system in the crystal growth furnace determined by an embodiment of the present invention and the heating power of the heating system in the crystal growth furnace determined by two-dimensional numerical simulation of related technologies is shown; wherein, the target heating power of the heating system in the crystal growth furnace includes a first target heating power and a second target heating power of the electrode.

[0142] Table 1

[0143]

[0144] It can be seen from the data in Table 1 that the embodiment of the present invention can improve the degree of proximity between the target heating power of the heating system determined by numerical simulation and the actual heating power of the heating system in the crystal growth furnace, indicating that the embodiment of the present invention can improve the accuracy of the simulation results obtained by numerical simulation of the crystal growth furnace.

[0145] In an optional embodiment, step S101 of constructing a first three-dimensional graphic corresponding to a heater in a crystal growth furnace includes:

[0146] Step S1011: construct a three-dimensional solid ring corresponding to the heater according to the edge profile of the heater in the crystal growth furnace.

[0147] Step S1012: Determine a target gap in the three-dimensional solid ring according to the three-dimensional solid ring and the heater.

[0148] Step S1013: construct a first three-dimensional graphic corresponding to the heater according to the target gap and the three-dimensional solid ring.

[0149] Specifically, in step S1011, the electronic device can extract the edge contour of the heater in the crystal growth furnace, and construct a three-dimensional figure based on the outer contour line of the edge contour to obtain a three-dimensional solid ring corresponding to the heater; it can be understood that the outer contour line of the three-dimensional solid ring is the same as the outer contour line of the heater, the size of the three-dimensional solid ring in the direction parallel to the third central axis is equal to the size of the heater in the direction parallel to the first central axis, and the size of the three-dimensional solid ring in the direction perpendicular to the third central axis is equal to the size of the heater in the direction perpendicular to the first central axis; the third central axis is the central axis of the three-dimensional solid ring, and the third central axis coincides with the fourth central axis of the first three-dimensional figure.

[0150] The three-dimensional solid ring constructed in step S1011 has two-dimensional axial symmetry, and the three-dimensional solid ring has two-dimensional axial symmetry means that the three-dimensional solid ring has two-dimensional axial symmetry with the third central axis as the center.

[0151] In an embodiment of the present invention, the volume of the three-dimensional solid ring is greater than the volume of the heater, and the volume of the three-dimensional solid ring is equal to the sum of the volume of the heater and the volume of the gaps between the heating circuits in the heater.

[0152] Specifically, in the case where the heater is a heater provided at the bottom of the crucible in the crystal growth furnace, reference is made to Figure 6 , showing a schematic diagram of a three-dimensional solid ring structure provided by the present invention Figure 1 , combined with Figure 2 and Figure 6 The heater 10 arranged at the bottom of the crucible in the crystal growth furnace is a circular ring structure. The electronic device constructs a three-dimensional solid ring 111 corresponding to the heater 10 according to the edge contour of the heater 10 in the crystal growth furnace through step S1011, which is a disc-shaped ring; in this scenario, the size of the three-dimensional solid ring 111 in the direction parallel to the third central axis refers to the thickness size of the disc-shaped ring, and the size of the three-dimensional solid ring 111 in the direction perpendicular to the third central axis refers to the width size of the disc-shaped ring.

[0153] In the case where the heater is a heater surrounding the side wall of the crucible, refer to Figure 7 , showing a schematic diagram of a three-dimensional solid ring structure provided by the present invention Figure 2 , combined with Figure 3 and Figure 7The heater 10 surrounding the side wall of the crucible is a cylindrical structure. The electronic device constructs a three-dimensional solid ring 111 corresponding to the heater 10 according to the edge contour of the heater 10 in the crystal growth furnace through step S1011, which is a cylinder; in this scenario, the dimension of the three-dimensional solid ring 111 in the direction parallel to the third central axis refers to the height dimension of the cylinder, and the dimension of the three-dimensional solid ring 111 in the direction perpendicular to the third central axis refers to the thickness dimension of the side wall of the cylinder.

[0154] In an embodiment of the present invention, since the three-dimensional solid ring constructed by step S1011 includes the volume of the gap between the heating circuits in the heater, in order to ensure that the volume of the first three-dimensional figure obtained is equal to the volume of the heater, the electronic device can execute step S1012 to determine the target gap from the three-dimensional solid ring based on the three-dimensional solid ring and the heater when the three-dimensional solid ring is obtained by step S1011, wherein the volume of the target gap is equal to the difference between the volume of the three-dimensional solid ring and the volume of the heater, that is, the volume of the target gap is equal to the volume of the gap between the heating circuits in the heater.

[0155] Specifically, in step S1012, the electronic device can determine the difference between the volume of the heater and the volume of the three-dimensional solid ring as the volume of the target gap; then, based on the volume of the target gap, determine from the three-dimensional solid ring an area with two-dimensional axial symmetry and a volume equal to the volume of the target gap as the target area of the target gap in the three-dimensional solid ring, and the target gap can be determined from the three-dimensional solid ring based on the target area; in an embodiment of the present invention, determining from the three-dimensional solid ring that the target gap has two-dimensional axial symmetry, and the target gap having two-dimensional axial symmetry means that the target gap has two-dimensional axial symmetry with the third central axis as the center.

[0156] When the target gap is determined, the electronic device may execute step S1013 to set the target gap in the three-dimensional solid ring according to the target area of the target gap in the three-dimensional solid ring to obtain a first three-dimensional graphic corresponding to the heater.

[0157] Specifically, in the case where the heater is a heater provided at the bottom of the crucible in the crystal growth furnace, reference is made to Figure 8 , showing a schematic structural diagram of a first three-dimensional graphic provided by the present invention Figure 1, the heater 10 arranged at the bottom of the crucible in the crystal growth furnace is a circular ring structure, and the target gap 112 determined by the electronic device through step S1012 is a three-dimensional ring structure with two-dimensional axisymmetry arranged in the three-dimensional solid ring 111 in the direction perpendicular to the fourth central axis; in this scenario, the size of the target gap 112 in the direction parallel to the fourth central axis is equal to the size of the three-dimensional solid ring 111 in the direction parallel to the fourth central axis, and the size of the target gap 112 in the direction perpendicular to the fourth central axis is smaller than the size of the three-dimensional solid ring 111 in the direction perpendicular to the fourth central axis. It should be noted that, Figure 8 This is merely an example of where the target gap 112 is positioned in the three-dimensional solid ring 111 . In practical application scenarios, the target gap 112 can be positioned at any position in the three-dimensional solid ring 111 in a direction perpendicular to the fourth central axis.

[0158] In the case where the heater is a heater surrounding the side wall of the crucible, refer to Figure 9 , showing a schematic structural diagram of a first three-dimensional graphic provided by the present invention Figure 2 , the heater 10 surrounding the side wall of the crucible is a cylindrical structure, and the target gap 112 determined by the electronic device through step S1012 is a three-dimensional ring structure with two-dimensional axisymmetry arranged in a direction parallel to the fourth central axis in the three-dimensional solid ring 111; in this scenario, the size of the target gap 112 in the direction parallel to the fourth central axis is smaller than the size of the three-dimensional solid ring 111 in the direction parallel to the fourth central axis, and the size of the target gap 112 in the direction perpendicular to the fourth central axis is equal to the size of the three-dimensional solid ring 111 in the direction perpendicular to the fourth central axis. It should be noted that, Figure 9 This is merely an example of where the target gap 112 is positioned in the three-dimensional solid ring 111 . In practical applications, the target gap 112 can be positioned anywhere in the three-dimensional solid ring 111 in a direction parallel to the fourth central axis.

[0159] The model construction method of the crystal growth furnace provided by the embodiment of the present invention can ensure that the volume of the first three-dimensional figure is equal to the volume of the heater while ensuring that the first three-dimensional figure has two-dimensional axial symmetry. This is beneficial to ensuring that the first three-dimensional figure has two-dimensional axial symmetry, which is conducive to realizing the construction of the two-dimensional heater model, while improving the closeness between the two-dimensional heater model constructed according to the first three-dimensional figure and the heater, and further helps to improve the closeness between the simulation results obtained by numerical simulation of the crystal growth furnace based on the two-dimensional heater model and the actual crystal growth conditions in the crystal growth furnace.

[0160] In an optional embodiment, the step S1012 of determining a target gap in the three-dimensional solid ring according to the three-dimensional solid ring and the heater includes:

[0161] A11. Divide the heater into at least two coaxial rings, and determine a first volume of each of the coaxial rings.

[0162] A12. Divide the three-dimensional solid ring into solid rings corresponding to the coaxial rings one by one according to the positions of the coaxial rings in the heater.

[0163] A13. Obtain a first inner circle radius and a first outer circle radius of the solid ring.

[0164] A14. Determine a second volume of the solid circular ring based on the first inner circle radius and the first outer circle radius.

[0165] A15. Calculate a width of the target gap corresponding to the solid circular ring according to a first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size.

[0166] A16. Determine a target gap from the solid circle according to the width dimension.

[0167] In an embodiment of the present invention, in the process of determining the target gap from the three-dimensional solid ring based on the three-dimensional solid ring and the heater, the electronic device can divide the heater into at least two coaxial rings through step A11, and divide the three-dimensional solid ring into solid rings corresponding to the coaxial rings one by one through step A12, and then determine the second volume of each solid ring through operations corresponding to steps A13 and A14, and finally determine the target gap from the solid ring through operations corresponding to steps A15 and A16.

[0168] Here, coaxial rings refer to rings whose central axes coincide with each other.

[0169] Specifically, in the case where the heater is a heater provided at the bottom of the crucible in the crystal growth furnace, reference is made to Figure 10 , showing a schematic structural diagram of a heater provided by the present invention Figure 5 In step A11, the electronic device may divide the heater 10 into n coaxial rings 101 with different radii along a direction perpendicular to the first central axis, where n is an integer greater than or equal to 2. In this scenario, the first volume of the i-th coaxial ring in the heater can be expressed as:

[0170] (29)

[0171] in, Represents the first volume of the i-th coaxial ring in the heater, unit: m 3 ; Indicates the first dimension of the coaxial ring in the direction parallel to the first central axis, unit: m; represents the projected area of the i-th coaxial ring in the heater along the direction parallel to the first central axis. In the embodiment of the present invention, the second dimensions of the coaxial rings in the heater in the direction perpendicular to the first central axis may be the same or different.

[0172] In the case where the heater is a heater surrounding the side wall of the crucible, refer to Figure 11 , showing a schematic structural diagram of a heater provided by the present invention Figure 6 In step A11, the electronic device may divide the heater 10 into n coaxial rings 101 having the same radius along a direction parallel to the first central axis, where n is an integer greater than or equal to 2. In this scenario, the first volume of the i-th coaxial ring in the heater can be expressed as:

[0173] (30)

[0174] in, represents the shortest distance between the top of the i-th coaxial ring and the top of the heater in the direction parallel to the first central axis, in meters; represents the shortest distance between the top of the (i+1)th coaxial ring and the top of the heater in a direction parallel to the first central axis, in meters. In embodiments of the present invention, the first dimensions of the coaxial rings in the heater in a direction parallel to the first central axis may be the same or different.

[0175] It should be noted that i is the position number of the coaxial ring in the heater. In the case where the heater is a heater set at the bottom of the crucible in the crystal growth furnace, the electronic device can set the position number of the coaxial ring closest to the first central axis in the heater to "1", and number the coaxial rings in the heater starting from "1" and adding "1" in order of distance from the first central axis to obtain the position number of each coaxial ring; it can be understood that the position number of the coaxial ring farthest from the first central axis in the heater is "n". In the case where the heater is a heater surrounding the side wall of the crucible, the electronic device can number the coaxial rings in the heater starting from "1" and adding "1" in order from the top to the bottom of the heater to obtain the position number of each coaxial ring, wherein the position number of the coaxial ring located at the top of the heater is "1", and the position number of the coaxial ring located at the bottom of the heater is "n", the top of the heater is away from the electrode provided in conjunction with the heater, and the bottom of the heater is close to the electrode provided in conjunction with the heater.

[0176] In step A12, the electronic device can divide the three-dimensional solid ring corresponding to the heater into solid rings that correspond one-to-one to the coaxial rings in the same manner as dividing the heater into at least two coaxial rings in step A11; wherein, the one-to-one correspondence between the solid rings and the coaxial rings means that: the position of the solid ring in the three-dimensional solid ring is the same as the position of the coaxial ring in the heater, and the one-to-one corresponding solid rings and coaxial rings are the same size; the number of solid rings obtained by the electronic device through step A12 is the same as the number of coaxial rings obtained through step A11, both of which are n.

[0177] Specifically, since the size of the three-dimensional solid ring in the direction parallel to the third central axis is equal to the size of the heater in the direction parallel to the first central axis, and the size of the three-dimensional solid ring in the direction perpendicular to the third central axis is equal to the size of the heater in the direction perpendicular to the first central axis, the size of the solid ring in the direction parallel to the third central axis is equal to the first size of the coaxial ring corresponding to the solid ring in the direction parallel to the first central axis, and the size of the solid ring in the direction perpendicular to the third central axis is equal to the second size of the coaxial ring corresponding to the solid ring in the direction perpendicular to the first central axis.

[0178] In step A13, refer to Figure 12 and Figure 13 , Figure 12 Shows a schematic diagram of a three-dimensional solid ring structure provided by the present invention Figure 3 , Figure 13 Shows a schematic diagram of a three-dimensional solid ring structure provided by the present invention Figure 4Specifically, the first inner circle radius r of the jth solid ring 1111 in the three-dimensional solid ring 111 j Refers to the radius of the circle formed by the inner wall of the j-th solid ring 1111, the first outer circle radius r of the j-th solid ring 1111 in the three-dimensional solid ring 111 j+1 It refers to the radius of the circle formed by the outer wall of the j-th solid ring 1111.

[0179] After obtaining the first inner circle radius and the first outer circle radius of the solid circle in step A13, the electronic device may further execute step A14 to determine the second volume of the solid circle based on the first inner circle radius and the first outer circle radius.

[0180] Specifically, when the heater is a heater provided at the bottom of a crucible in a crystal growth furnace, the second volume of the j-th solid ring in the three-dimensional solid ring may be:

[0181] (31)

[0182] in, Represents the second volume of the jth solid ring in a three-dimensional solid ring, unit: m 3 ; Indicates the first inner circle radius of the j-th solid ring, unit: m; Represents the first outer circle radius of the j-th solid ring, unit: m.

[0183] In the case where the heater is a heater surrounding the side wall of the crucible, the second volume of the j-th solid ring in the three-dimensional solid ring can be:

[0184] (32)

[0185] in, It represents the shortest distance between the top of the j-th solid circular ring and the top of the three-dimensional solid ring in the direction parallel to the third central axis, in meters; It represents the shortest distance between the top of the j+1th solid circular ring and the top of the three-dimensional solid ring in the direction parallel to the third central axis, unit: m; the position of the top of the three-dimensional solid ring is the same as the top of the heater.

[0186] The second volume of the solid ring determined by the electronic device in step A14 is greater than the first volume of the coaxial ring corresponding to the solid ring determined in step A11, that is, > .

[0187] j is the position number of the solid ring in the three-dimensional solid ring. In the embodiment of the present invention, the position number of the solid ring is the same as the position number of the coaxial ring that has a one-to-one correspondence with the solid ring.

[0188] After the electronic device determines the second volume of each solid circular ring through step A14, it can first calculate the first difference between the second volume and the first volume, and obtain the first dimension of the coaxial circular ring in the direction parallel to the first central axis, and then execute step A15 to calculate the width dimension of the target gap corresponding to each solid circular ring based on the first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius and the first dimension.

[0189] Among them, when the heater is a heater arranged at the bottom of the crucible in the crystal growth furnace, the width dimension of the target gap refers to the dimension of the target gap in the direction perpendicular to the third central axis; when the heater is a heater surrounding the side wall of the crucible, the width dimension of the target gap refers to the dimension of the target gap in the direction parallel to the third central axis.

[0190] Specifically, in step A15, when the heater is a heater arranged at the bottom of the crucible in the crystal growth furnace, the size of the target gap in the direction parallel to the third central axis is equal to the size of the solid ring in the direction parallel to the third central axis, and the electronic device can calculate the size of the target gap in the direction perpendicular to the third central axis based on the first difference and the size of the solid ring in the direction parallel to the third central axis as the width size of the target gap corresponding to the solid ring.

[0191] When the heater is a heater that surrounds the side wall of the crucible, the size of the target gap in the direction perpendicular to the third center axis is equal to the size of the solid ring in the direction perpendicular to the third center axis. The electronic device can calculate the size of the target gap in the direction parallel to the third center axis based on the first difference and the size of the solid ring in the direction perpendicular to the third center axis as the width size of the target gap corresponding to the solid ring.

[0192] In step A16, when the heater is a heater arranged at the bottom of the crucible in the crystal growth furnace, the electronic device can select an area corresponding to the width dimension of the target gap in the solid ring in a direction perpendicular to the third center axis as the target area where the target gap is located in the solid ring.

[0193] When the heater is a heater surrounding the side wall of the crucible, the electronic device can select an area corresponding to the width of the target gap in the solid ring in a direction parallel to the third center axis as the target area where the target gap is located in the solid ring.

[0194] It can be understood that when the number of solid rings is n, the number of target gaps determined by the electronic device through step A16 is equal to the number of solid rings, which is also n; wherein the sum of the volumes of the target gaps determined from the n solid rings is equal to the volume of the gaps between the heating circuits in the heater.

[0195] In an embodiment of the present invention, when the electronic device determines the target gap from each solid ring through step A16, during the execution of step S1013, the electronic device can set the target gap in the solid ring based on the solid ring and the target gap determined from the solid ring, and obtain the first three-dimensional graphic corresponding to the heater when the target gap corresponding to the solid ring is set in each solid ring in the three-dimensional solid ring.

[0196] The embodiment of the present invention divides the three-dimensional solid ring into at least two solid circular rings and determines the target gap from each solid circular ring, which is conducive to improving the accuracy of the target gap determined by the electronic device, and further improving the accuracy of the first three-dimensional graphic corresponding to the heater constructed based on the target gap and the three-dimensional solid ring.

[0197] In an optional embodiment, obtaining the first inner radius of the solid ring in step A13 includes:

[0198] Step A131: Obtain the second inner circle radius and the second outer circle radius of the three-dimensional solid ring.

[0199] Step A132: Calculate a second difference between the second outer circle radius and the second inner circle radius.

[0200] Step A133: Obtain the position number of the solid circular ring in the three-dimensional solid ring, and calculate a third difference between the position number and the preset parameter.

[0201] Step A134: Calculate a first ratio between the third difference and the total number of solid circular rings in the three-dimensional solid ring.

[0202] Step A135: Calculate a first product between the second difference and the first ratio.

[0203] Step A136: Calculate a first sum of the first product and the second inner circle radius, and determine the first sum as the first inner circle radius of the solid ring.

[0204] The method for obtaining the first inner radius of a solid ring provided by the embodiment of the present invention can be applied to a scenario where the heater is a heater disposed at the bottom of a crucible in a crystal growth furnace.

[0205] Specifically, in the case where a heater is provided at the bottom of a crucible in a crystal growth furnace, as Figure 6 As shown, the three-dimensional solid ring 111 corresponding to the heater 10 is a disc-shaped ring. In step A131, the electronic device can use the radius R1 of the circle formed by the inner wall of the three-dimensional solid ring 111 as the second inner circle radius, and use the radius R2 of the circle formed by the outer wall of the three-dimensional solid ring 111 as the second outer circle radius.

[0206] In step A133, the manner in which the electronic device obtains the position number of the solid circle in the three-dimensional solid ring can be referred to the detailed description in the corresponding embodiments of steps A11 to A16, which will not be repeated here.

[0207] When the electronic device obtains the position number of the solid circle, it can use the difference between the position number and the preset parameter as the third difference; wherein the preset parameter is "1".

[0208] In this embodiment of the present invention, the electronic device can obtain the first inner circle radius of the solid ring using the following formula:

[0209] (33)

[0210] in, Indicates the position number of the solid circle; Indicates preset parameters; Indicates the second inner circle radius; Indicates the second outer circle radius; Indicates the total number of solid rings in a three-dimensional solid annulus.

[0211] In an optional embodiment, the electronic device may obtain the first outer circle radius of the solid ring by using the following formula:

[0212] (34)

[0213] In an optional embodiment, when the heater is a heater surrounding the side wall of the crucible, the electronic device obtains the first inner circle radius and the first outer circle radius of the solid ring, specifically:

[0214] First, the second inner circle radius and the second outer circle radius of the three-dimensional solid ring are obtained; then, the second inner circle radius of the three-dimensional solid ring is determined as the first inner circle radius of the solid ring, and the second outer circle radius of the three-dimensional solid ring is determined as the first outer circle radius of the solid ring.

[0215] Specifically, in the case where the heater is a heater surrounding the side wall of the crucible, such as Figure 7As shown, the three-dimensional solid ring 111 corresponding to the heater 10 is a cylinder. The electronic device can use the radius R1 of the circle formed by the inner wall of the three-dimensional solid ring 111 as the second inner circle radius, and the radius R2 of the circle formed by the outer wall of the three-dimensional solid ring 111 as the second outer circle radius. It can be understood that in the case where the heater 10 is a heater surrounding the side wall of the crucible, ,and .

[0216] In an optional embodiment, when the heater is a heater provided at the bottom of a crucible in a crystal growth furnace, the step A15 of calculating the width of the target gap corresponding to the solid circular ring according to the first difference between the second volume and the first volume, the first inner radius, the first outer radius, and the first size includes:

[0217] Step A151: Calculate the width of the target gap corresponding to the solid ring based on the first difference between the second volume and the first volume, the first inner radius, the first outer radius, and the first size. The width of the target gap corresponding to the j-th solid ring is:

[0218] (35)

[0219] in, Indicates the width of the target gap corresponding to the j-th solid circle, unit: m; Indicates the first difference, unit: m 3 ,and .

[0220] Specifically, the volume ratio of the one-to-one corresponding coaxial rings and solid rings can be expressed as:

[0221] (36)

[0222] in, represents the volume ratio of the one-to-one corresponding coaxial rings and the solid ring.

[0223] Specifically, when the heater is a heater provided at the bottom of the crucible in the crystal growth furnace, the fourth volume of the target gap corresponding to the j-th solid ring is:

[0224] (37)

[0225] Then we get: (38)

[0226] in, Represents the fourth volume of the target gap corresponding to the j-th solid ring, unit: m 3 .

[0227] In an optional embodiment, when the heater is a heater surrounding the side wall of the crucible, step A15 calculates the width of the target gap corresponding to the solid ring based on the first difference between the second volume and the first volume, the first inner radius, the first outer radius, and the first size, including:

[0228] Step A152: Calculate the width of the target gap corresponding to the solid ring based on the first difference between the second volume and the first volume, the first inner radius, the first outer radius, and the first size. The width of the target gap corresponding to the j-th solid ring is:

[0229] (39)

[0230] Wherein, in the case where the heater is a heater surrounding the side wall of the crucible, ,and , therefore, the width of the target gap corresponding to the j-th solid ring can also be expressed as:

[0231] (40)

[0232] Specifically, when the heater is a heater surrounding the side wall of the crucible, the fourth volume of the target gap corresponding to the j-th solid ring is:

[0233] (41)

[0234] Then we get: (42)

[0235] The model construction method of the crystal growth furnace provided in the embodiment of the present invention provides an implementation method for calculating the width size of the target gap corresponding to the application scenario where the heater is a heater arranged at the bottom of the crucible in the crystal growth furnace, and an application scenario where the heater is a heater surrounding the side wall of the crucible. This not only helps to improve the accuracy of the target gap determined by the electronic device, but also expands the application scope of the present invention and improves the feasibility of the technical solution of the present invention.

[0236] In an optional embodiment, step S102 constructing a second three-dimensional graphic corresponding to the electrode according to the electrode provided in cooperation with the heater in the crystal growth furnace and a first distance between a first central axis of the heater and a second central axis of the electrode includes:

[0237] Step S1021: Obtain a third dimension of an electrode provided in cooperation with the heater in a direction parallel to the first central axis.

[0238] Step S1022: Acquire a third volume of the electrode configured to cooperate with the heater according to the third size.

[0239] Step S1023: Calculate a fourth size of the second three-dimensional figure in a direction perpendicular to the fourth central axis according to the third volume, the third size, and a first distance between the first central axis of the heater and the second central axis of the electrode.

[0240] Step S1024: Based on the fourth size, with the fourth central axis as the center, construct a three-dimensional ring whose distance from the fourth central axis is equal to the first distance, and determine the three-dimensional ring as the second three-dimensional graphic corresponding to the electrode.

[0241] Specifically, in step S1021, the electronic device may Figure 4 or Figure 5 The height dimension of the electrode 20 shown is determined as a third dimension of the electrode 20 in a direction parallel to the first central axis.

[0242] The third volume obtained by the electronic device in step S1022 refers to the total volume of the two electrodes provided in conjunction with the heater. In step S1022, the electronic device may first obtain the projected area of the electrodes along a direction parallel to the first central axis, and then calculate the third volume of the electrodes provided in conjunction with the heater based on the third dimension and the projected area of the electrodes along a direction parallel to the first central axis using the following formula:

[0243] (43)

[0244] in, Indicates the third volume, unit: m 3 ; Indicates the third dimension, unit: m; Represents the projected area of the electrode along the direction parallel to the first central axis, unit: m 2 .

[0245] In this embodiment of the present invention, it is assumed that:

[0246] (44)

[0247] in, Indicates the volume of the second three-dimensional figure, unit: m 3 , and in the embodiment of the present invention, the volume of the second three-dimensional figure Equal to the third volume; Indicates the fourth dimension, unit: m; Indicates the first distance, unit: m.

[0248] According to Formula 44, the fourth dimension of the second three-dimensional figure in the direction perpendicular to the fourth central axis can be expressed as:

[0249] (45)

[0250] In step S1023, the electronic device can calculate the fourth size of the second three-dimensional figure in the direction perpendicular to the fourth central axis according to formula 45 based on the third volume, the third size, and the first distance between the first central axis of the heater and the second central axis of the electrode.

[0251] In step S1024, the electronic device may construct a three-dimensional ring with a distance from the fourth central axis equal to the first distance based on the fourth size and with the fourth central axis as the center, and determine the three-dimensional ring as the second three-dimensional graphic corresponding to the electrode.

[0252] Reference Figure 14 , shows a structural schematic diagram of a second three-dimensional graphic provided by the present invention. The second three-dimensional graphic 21 corresponding to the electrode constructed by the electronic device through the operations corresponding to steps S1021 to S1024 has two-dimensional axial symmetry, and the volume of the second three-dimensional graphic 21 is equal to the total volume of the two electrodes set in conjunction with the heater 10; wherein, the thickness of the side wall of the second three-dimensional graphic 21 is equal to the fourth dimension, and the dimension of the second three-dimensional graphic 21 in the direction parallel to the fourth central axis is equal to the third dimension.

[0253] In an optional embodiment, the obtaining of the first power density of the heater and the second power density of the electrode in step S104 includes:

[0254] Step S1043: Acquire a first heating power of the heater and a second heating power of the electrode.

[0255] Step S1044: Calculate a first power density of the heater according to the first heating power and the volume of the first three-dimensional graphic.

[0256] Step S1045: Calculate a second power density of the electrode according to the second heating power and the volume of the second three-dimensional graphic.

[0257] In an embodiment of the present invention, the first power density of the heater is the volume average power density of the heater, and the second power density of the electrode is the volume average power density of the electrode.

[0258] In step S1043, the electronic device can calculate the heat generation of the heater and the heat generation of the electrode respectively through Maxwell's equations in the same way as step S1041, and then convert the heat generation into heating power to obtain the first heating power of the heater and the second heating power of the electrode.

[0259] Specifically, the first heating power of the heater can be expressed as:

[0260] (46)

[0261] in, Indicates the first heating power, unit: W; Indicates the volume of the heater, unit: m 3 ; Indicates the volume power density of the heater, unit: W / m 3 .

[0262] The second heating power of the electrode can be expressed as:

[0263] (47)

[0264] in, Indicates the second heating power, unit: W; Indicates the volume power density of the electrode, unit: W / m 3 .

[0265] In other embodiments, the first heating power of the heater can be expressed as:

[0266] (48)

[0267] in, Indicates the first heating power of the i-th coaxial ring in the heater, unit: W; Represents the volume power density of the i-th coaxial ring in the heater, unit: W / m 3 .

[0268] In some embodiments, the electronic device calculates the first power density of the heater according to the first heating power and the volume of the first three-dimensional figure in step S1044 as:

[0269] (49)

[0270] in, Indicates the first power density of the heater.

[0271] In other embodiments, when the heater is a heater disposed at the bottom of a crucible in a crystal growth furnace, the electronic device calculates the first power density of the heater in step S1044 based on the first heating power and the volume of the first three-dimensional figure as follows:

[0272] (50)

[0273] in, represents the first power density of the i-th coaxial ring in the heater.

[0274] In the case where the heater is a heater surrounding the side wall of the crucible, the electronic device calculates the first power density of the heater according to the first heating power and the volume of the first three-dimensional figure in step S1044 as follows:

[0275] (51)

[0276] In step S1045, the electronic device calculates the second power density of the electrode according to the second heating power and the volume of the second three-dimensional graph as follows:

[0277] (52)

[0278] in, represents the second power density of the electrode.

[0279] In an optional embodiment, step S103 of constructing a two-dimensional heater model corresponding to the heater according to the first three-dimensional graphic, and constructing a two-dimensional electrode model corresponding to the electrode according to the second three-dimensional graphic, includes:

[0280] Step S1031: Combine the first three-dimensional figure and the second three-dimensional figure to obtain a combined three-dimensional figure; in the combined three-dimensional figure, the fourth central axis of the first three-dimensional figure coincides with the central axis of the second three-dimensional figure.

[0281] Step S1032: cut the combined three-dimensional figure along any plane where the fourth central axis is located to obtain a cross-sectional view.

[0282] Step S1033: Determine the two-dimensional cross-sectional view of the first three-dimensional figure in the cross-sectional view as a two-dimensional heater model, and determine the two-dimensional cross-sectional view of the second three-dimensional figure in the cross-sectional view as a two-dimensional electrode model.

[0283] In an embodiment of the present invention, after constructing a first three-dimensional graphic corresponding to the heater and constructing a second three-dimensional graphic corresponding to the electrode, the electronic device may perform step S1031 to combine the first three-dimensional graphic and the second three-dimensional graphic to obtain a combined three-dimensional graphic; Figure 15, showing a schematic diagram of the structure of a combined three-dimensional graphic provided by the present invention Figure 1 , Figure 15 The combined three-dimensional graph shown is a combined three-dimensional graph obtained in the scenario where the heater 10 is a heater arranged at the bottom of the crucible in the crystal growth furnace; Figure 16 , showing a schematic diagram of the structure of a combined three-dimensional graphic provided by the present invention Figure 2 , Figure 16 The combined three-dimensional graph shown is a combined three-dimensional graph obtained in a scenario where the heater 10 is a heater surrounding the side wall of the crucible.

[0284] When the combined three-dimensional graphic is obtained through step S1031, the electronic device can execute step S1032 to cut the combined three-dimensional graphic along any plane where the fourth central axis is located to obtain a cross-sectional view.

[0285] Reference Figure 17 , showing a schematic cross-sectional structure of a combined three-dimensional graphic provided by the present invention Figure 1 , specifically, Figure 17 For the general Figure 15 The combined three-dimensional figure shown is cut along any plane where the fourth central axis is located to obtain a cross-sectional view. In step S1033, the electronic device can Figure 17 The two-dimensional cross-sectional view of the first three-dimensional figure 11 in the cross-sectional view shown is used as a two-dimensional heater model corresponding to the heater 10 arranged at the bottom of the crucible in the crystal growth furnace, and Figure 17 The two-dimensional cross-sectional view of the second three-dimensional figure 21 in the cross-sectional view shown is used as a two-dimensional electrode model corresponding to the electrode 20 provided in conjunction with the heater 10 provided at the bottom of the crucible in the crystal growth furnace. The two-dimensional heater model 31 and the two-dimensional electrode model 32 are finally obtained as shown in FIG. Figure 18 shown.

[0286] Reference Figure 19 , showing a schematic cross-sectional structure of a combined three-dimensional graphic provided by the present invention Figure 2 , specifically, Figure 19 For the general Figure 16 The combined three-dimensional figure shown is cut along any plane where the fourth central axis is located to obtain a cross-sectional view; in step S1033, the electronic device can Figure 18 The two-dimensional cross-sectional view of the first three-dimensional figure 11 in the cross-sectional view shown is used as a two-dimensional heater model corresponding to the heater 10 surrounding the side wall of the crucible, and Figure 18 The two-dimensional cross-sectional view of the second three-dimensional figure 21 in the cross-sectional view shown is used as a two-dimensional electrode model corresponding to the electrode 20 provided in conjunction with the heater 10 surrounding the side wall of the crucible. The two-dimensional heater model 31 and the two-dimensional electrode model 32 are finally obtained as shown in FIG. Figure 20 shown.

[0287] In summary, the model construction method of the crystal growth furnace provided by the embodiment of the present invention, in the process of numerical simulation of the crystal growth furnace, not only takes into account the influence of the heater in the crystal growth furnace on the crystal growth conditions, but also takes into account the influence of the electrodes arranged in conjunction with the heater in the crystal growth furnace on the crystal growth conditions. This is conducive to further improving the degree of closeness between the simulation results obtained by numerical simulation of the crystal growth furnace and the actual crystal growth conditions in the crystal growth furnace. While reducing the amount of calculation for numerical simulation of the crystal growth furnace based on the two-dimensional heater model and the two-dimensional electrode model and improving the calculation efficiency, it can also improve the accuracy of the simulation results obtained by numerical simulation of the crystal growth furnace, and thus improve the reliability of the optimization control process of the crystal growth process in the crystal growth furnace according to the simulation results.

[0288] Device embodiment

[0289] Reference Figure 21 , shows a logic block diagram of a model building device for a crystal growth furnace provided by the present invention, the device may include:

[0290] A first graphic construction module 2101 is configured to construct a first three-dimensional graphic corresponding to a heater in a crystal growth furnace, wherein the first three-dimensional graphic has two-dimensional axial symmetry and a volume of the first three-dimensional graphic is equal to a volume of the heater;

[0291] A second graphic construction module 2102 is configured to construct a second three-dimensional graphic corresponding to the electrode according to an electrode provided in the crystal growth furnace in cooperation with the heater and a first distance between a first central axis of the heater and a second central axis of the electrode; the second three-dimensional graphic having two-dimensional axial symmetry and a volume equal to a volume of the electrode;

[0292] a model building module 2103, configured to build a two-dimensional heater model corresponding to the heater based on the first three-dimensional graphic, and to build a two-dimensional electrode model corresponding to the electrode based on the second three-dimensional graphic;

[0293] An acquisition module 2104 is configured to acquire a first power density of the heater and a second power density of the electrode;

[0294] A power loading module 2105 is configured to load the first power density to the two-dimensional heater model and load the second power density to the two-dimensional electrode model;

[0295] The numerical simulation module 2106 is used to perform numerical simulation on the crystal growth furnace based on the two-dimensional heater model and the two-dimensional electrode model.

[0296] Optionally, the first graphics construction module includes:

[0297] A first construction submodule is configured to construct a three-dimensional solid ring corresponding to a heater in a crystal growth furnace according to an edge profile of the heater; the dimension of the three-dimensional solid ring in a direction parallel to the third central axis is equal to the dimension of the heater in a direction parallel to the first central axis, and the dimension of the three-dimensional solid ring in a direction perpendicular to the third central axis is equal to the dimension of the heater in a direction perpendicular to the first central axis; the volume of the three-dimensional solid ring is greater than the volume of the heater, and the three-dimensional solid ring has two-dimensional axial symmetry; the third central axis is the central axis of the three-dimensional solid ring;

[0298] a first determining submodule, configured to determine a target gap from the three-dimensional solid ring according to the three-dimensional solid ring and the heater; the target gap has two-dimensional axial symmetry, and a volume of the target gap is equal to a difference between a volume of the three-dimensional solid ring and a volume of the heater;

[0299] The second construction submodule is configured to construct a first three-dimensional graphic corresponding to the heater according to the target gap and the three-dimensional solid ring.

[0300] Optionally, the first determining submodule includes:

[0301] a first dividing unit, configured to divide the heater into at least two coaxial rings and determine a first volume of each of the coaxial rings;

[0302] a second dividing unit, configured to divide the three-dimensional solid ring into solid rings corresponding one-to-one to the coaxial rings according to positions of the coaxial rings in the heater; wherein a size of the solid rings in a direction parallel to the third central axis is equal to a first size of the coaxial rings corresponding one-to-one to the solid rings in a direction parallel to the first central axis, and a size of the solid rings in a direction perpendicular to the third central axis is equal to a second size of the coaxial rings corresponding one-to-one to the solid rings in a direction perpendicular to the first central axis;

[0303] an acquiring unit, configured to acquire a first inner radius and a first outer radius of the solid ring;

[0304] a first determining unit, configured to determine a second volume of the solid annulus based on the first inner circle radius and the first outer circle radius;

[0305] a calculation unit, configured to calculate a width of a target gap corresponding to the solid circular ring according to a first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size;

[0306] The second determining unit is configured to determine a target gap from the solid circular ring according to the width.

[0307] Optionally, the acquiring unit includes:

[0308] A first acquiring subunit is configured to acquire a second inner radius and a second outer radius of the three-dimensional solid ring;

[0309] a first calculating subunit, configured to calculate a second difference between the second outer circle radius and the second inner circle radius;

[0310] a second acquiring subunit, configured to acquire a position number of a solid circular ring in the three-dimensional solid ring, and calculate a third difference between the position number and a preset parameter;

[0311] a second calculating subunit, configured to calculate a first ratio between the third difference and the total number of solid circular rings in the three-dimensional solid annular shape;

[0312] a third calculation subunit, configured to calculate a first product between the second difference and the first ratio;

[0313] The fourth calculation subunit is configured to calculate a first sum of the first product and the second inner circle radius, and determine the first sum as the first inner circle radius of the solid ring.

[0314] Optionally, the computing unit includes:

[0315] a fifth calculating subunit, configured to calculate a width of a target gap corresponding to the solid circular ring based on a first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size, wherein the width of the target gap corresponding to the solid circular ring is:

[0316] ,

[0317] in, represents the width of the target gap corresponding to the j-th solid circle; represents the first difference; represents the first inner radius of the j-th solid ring; represents the first size; j is an integer greater than 0 and less than or equal to the total number of solid circular rings in the three-dimensional solid ring.

[0318] Optionally, the computing unit further includes:

[0319] a sixth calculation subunit, configured to calculate a width of a target gap corresponding to the solid circular ring based on a first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size, wherein the width of the target gap corresponding to the solid circular ring is:

[0320] ;

[0321] in, represents the width of the target gap corresponding to the j-th solid circle; represents the first difference; represents the first inner radius of the j-th solid ring; represents the first outer circle radius of the jth solid ring; j is an integer greater than 0 and less than or equal to the total number of solid rings in the three-dimensional solid ring.

[0322] Optionally, the second graphics construction module includes:

[0323] a first acquisition submodule, configured to acquire a third dimension of an electrode provided in cooperation with the heater in a direction parallel to the first central axis;

[0324] a second acquisition submodule, configured to acquire a third volume of the electrode provided in cooperation with the heater according to the third size;

[0325] a first calculation submodule, configured to calculate a fourth dimension of the second three-dimensional figure in a direction perpendicular to a fourth central axis based on the third volume, the third dimension, and a first distance between the first central axis of the heater and the second central axis of the electrode; the fourth central axis being the central axis of the first three-dimensional figure;

[0326] The third construction submodule is used to construct a three-dimensional ring with a distance from the fourth central axis equal to the first distance based on the fourth size and with the fourth central axis as the center, and determine the three-dimensional ring as the second three-dimensional figure corresponding to the electrode.

[0327] Optionally, the acquisition module includes:

[0328] a third acquisition submodule, configured to acquire a first heating power of the heater and a second heating power of the electrode;

[0329] a second calculation submodule, configured to calculate a first power density of the heater according to the first heating power and the volume of the first three-dimensional figure;

[0330] The third calculation submodule is configured to calculate a second power density of the electrode according to the second heating power and the volume of the second three-dimensional graph.

[0331] Optionally, the model building module includes:

[0332] a graphics combination submodule, configured to combine the first three-dimensional graphics and the second three-dimensional graphics to obtain a combined three-dimensional graphics; in the combined three-dimensional graphics, the fourth central axis of the first three-dimensional graphics coincides with the central axis of the second three-dimensional graphics;

[0333] a graphic cutting submodule, configured to cut the combined three-dimensional graphic along any plane where the fourth central axis is located to obtain a cross-sectional view;

[0334] The second determining submodule is configured to determine the two-dimensional cross-sectional view of the first three-dimensional figure in the cross-sectional view as a two-dimensional heater model, and determine the two-dimensional cross-sectional view of the second three-dimensional figure in the cross-sectional view as a two-dimensional electrode model.

[0335] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0336] An embodiment of the present invention further provides an electronic device comprising: a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the crystal growth furnace model building method as described above when executing the computer program.

[0337] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0338] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they are aware of the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0339] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "includes," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or terminal device. In the absence of further limitations, an element defined by the phrase "comprises a..." does not exclude the presence of additional identical elements in the process, method, article, or terminal device that includes the element.

[0340] The above is a detailed introduction to the model construction method and electronic equipment of a crystal growth furnace provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for general technical personnel in this field, based on the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for constructing a model of a crystal growth furnace, characterized in that: The method comprises: According to the heater in the crystal growth furnace, a first three-dimensional graphic corresponding to the heater is constructed; the first three-dimensional graphic has two-dimensional axial symmetry and the volume of the first three-dimensional graphic is equal to the volume of the heater; according to the edge profile of the heater in the crystal growth furnace, a three-dimensional solid ring corresponding to the heater is constructed; the size of the three-dimensional solid ring in a direction parallel to the third central axis is equal to the size of the heater in a direction parallel to the first central axis, and the size of the three-dimensional solid ring in a direction perpendicular to the third central axis is equal to the size of the heater in a direction perpendicular to the first central axis; the volume of the three-dimensional solid ring is greater than the volume of the heater, and the three-dimensional solid ring has two-dimensional axial symmetry; the third central axis is the central axis of the three-dimensional solid ring; according to the three-dimensional solid ring and the heater, a target gap is determined from the three-dimensional solid ring; the target gap has two-dimensional axial symmetry, and the volume of the target gap is equal to the difference between the volume of the three-dimensional solid ring and the volume of the heater; according to the target gap and the three-dimensional solid ring, a first three-dimensional graphic corresponding to the heater is constructed; According to the electrode provided in cooperation with the heater in the crystal growth furnace, and the first distance between the first central axis of the heater and the second central axis of the electrode, a second three-dimensional graphic corresponding to the electrode is constructed; the second three-dimensional graphic has two-dimensional axial symmetry and the volume of the second three-dimensional graphic is equal to the volume of the electrode; a third dimension of the electrode provided in cooperation with the heater in a direction parallel to the first central axis is obtained; according to the third dimension, a third volume of the electrode provided in cooperation with the heater is obtained; according to the third volume, the third dimension, and the first distance between the first central axis of the heater and the second central axis of the electrode, a fourth dimension of the second three-dimensional graphic in a direction perpendicular to the fourth central axis is calculated; the fourth central axis is the central axis of the first three-dimensional graphic; according to the fourth dimension, a three-dimensional ring is constructed with the fourth central axis as the center, the distance between the fourth central axis and the fourth central axis being equal to the first distance, and the three-dimensional ring is determined as the second three-dimensional graphic corresponding to the electrode; Constructing a two-dimensional heater model corresponding to the heater based on the first three-dimensional graphic, and constructing a two-dimensional electrode model corresponding to the electrode based on the second three-dimensional graphic; combining the first three-dimensional graphic and the second three-dimensional graphic to obtain a combined three-dimensional graphic; in the combined three-dimensional graphic, the fourth central axis of the first three-dimensional graphic coincides with the central axis of the second three-dimensional graphic; cutting the combined three-dimensional graphic along any plane where the fourth central axis lies to obtain a cross-sectional view; determining the two-dimensional cross-sectional view of the first three-dimensional graphic in the cross-sectional view as a two-dimensional heater model, and determining the two-dimensional cross-sectional view of the second three-dimensional graphic in the cross-sectional view as a two-dimensional electrode model; obtaining a first power density of the heater and a second power density of the electrode; loading the first power density to the two-dimensional heater model, and loading the second power density to the two-dimensional electrode model; The crystal growth furnace is numerically simulated based on the two-dimensional heater model and the two-dimensional electrode model.

2. The method according to claim 1, characterized in that The step of determining a target gap from the three-dimensional solid ring according to the three-dimensional solid ring and the heater includes: dividing the heater into at least two coaxial rings, and determining a first volume of each of the coaxial rings; According to the position of the coaxial ring in the heater, the three-dimensional solid ring is divided into solid rings corresponding to the coaxial rings one by one; the size of the solid ring in a direction parallel to the third central axis is equal to the first size of the coaxial ring corresponding to the solid ring in a direction parallel to the first central axis, and the size of the solid ring in a direction perpendicular to the third central axis is equal to the second size of the coaxial ring corresponding to the solid ring in a direction perpendicular to the first central axis; Obtaining a first inner circle radius and a first outer circle radius of the solid ring; determining a second volume of the solid annulus based on the first inner radius and the first outer radius; Calculating a width of a target gap corresponding to the solid circular ring according to a first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size; Based on the width dimension, a target gap is determined from the solid circle.

3. The method according to claim 2, characterized in that The obtaining of the first inner radius of the solid ring includes: Obtain a second inner circle radius and a second outer circle radius of the three-dimensional solid ring; Calculating a second difference between the second outer circle radius and the second inner circle radius; Obtaining a position number of a solid circular ring in the three-dimensional solid annular shape, and calculating a third difference between the position number and a preset parameter; Calculating a first ratio between the third difference and the total number of solid circular rings in the three-dimensional solid annular shape; calculating a first product between the second difference and the first ratio; A first sum value between the first product and the second inner circle radius is calculated, and the first sum value is determined as a first inner circle radius of the solid circular ring.

4. The method according to claim 2, characterized in that Calculating the width of the target gap corresponding to the solid circular ring according to the first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size includes: The width of the target gap corresponding to the solid circular ring is calculated based on the first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size. The width of the target gap corresponding to the solid circular ring is: ； in, represents the width of the target gap corresponding to the j-th solid circle; represents the first difference; represents the first inner radius of the j-th solid ring; represents the first size; j is an integer greater than 0 and less than or equal to the total number of solid circular rings in the three-dimensional solid ring.

5. The method according to claim 2, characterized in that Calculating the width of the target gap corresponding to the solid circular ring according to the first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size includes: The width of the target gap corresponding to the solid circular ring is calculated based on the first difference between the second volume and the first volume, the first inner circle radius, the first outer circle radius, and the first size. The width of the target gap corresponding to the solid circular ring is: ； in, represents the width of the target gap corresponding to the j-th solid circle; represents the first difference; represents the first inner radius of the j-th solid ring; represents the first outer circle radius of the jth solid ring; j is an integer greater than 0 and less than or equal to the total number of solid rings in the three-dimensional solid ring.

6. The method according to claim 1, characterized in that The obtaining of the first power density of the heater and the second power density of the electrode comprises: obtaining a first heating power of the heater and a second heating power of the electrode; calculating a first power density of the heater according to the first heating power and the volume of the first three-dimensional figure; A second power density of the electrode is calculated according to the second heating power and the volume of the second three-dimensional figure.

7. An electronic device, characterized in that: include: A memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the model construction method of the crystal growth furnace according to any one of claims 1 to 6 when executing the computer program.

Images