Optical device and method of manufacturing optical device

Abstract

In an embodiment, a light emitting device includes a substrate including a plurality of light emitting portions, and a film disposed on the substrate. The substrate includes a groove surface at an end of a surface of the substrate.

Description

[0001] Related Applications

[0002] This application claims the benefit of Japanese Priority Patent Application JP 2022-195290, filed on Dec. 7, 2022, the entire content of which is incorporated herein by reference. Technical Field

[0003] The technology according to the present disclosure (hereinafter referred to as "the present technology") relates to an optical device and a method of manufacturing an optical device. Background Art

[0004] In related art, an optical device including an element is known, the element including a substrate and an element forming portion provided on the substrate (see, for example, PTL1). The known optical device is obtained by dividing and separating a plurality of element forming portions provided together on a wafer.

[0005] [Citation List]

[0006] [Patent Literature]

[0007] PTL1: JP 2021-22665A Summary of the Invention

[0008] [Technical Problem]

[0009] However, in past optical devices, the substrate included apex portions at an end portion on one surface side and at an end portion on the other surface side opposite to the one surface side, and thus, problems such as peeling of a thin film deposited on the substrate and chipping of the substrate may occur in the manufacturing process.

[0010] Therefore, it is desirable to provide an optical device that can suppress problems such as peeling of a thin film deposited on the substrate and chipping of the substrate during the manufacturing process.

[0011] [Solution to the Technical Problem]

[0012] To solve the above problems, a light-emitting device includes a substrate and a film provided on the substrate, the substrate including a plurality of light-emitting portions. The substrate includes a groove surface at an end portion on the surface of the substrate.

[0013] In an exemplary embodiment, the film is a thin film.

[0014] In an exemplary embodiment, the film is an antireflection film.

[0015] In an exemplary embodiment, the film is provided on the groove surface.

[0016] In an exemplary embodiment, the film is an electrode.

[0017] In an exemplary embodiment, the film includes wirings.

[0018] In an exemplary embodiment, the film is a Au thin film.

[0019] In an exemplary instance, the film includes an anode electrode and an insulating film.

[0020] In an exemplary embodiment, each light-emitting portion is a vertical cavity surface emitting laser (VCSEL).

[0021] In an exemplary embodiment, the light-emitting device is a back-emission type.

[0022] In an exemplary embodiment, a plurality of light-emitting portions are two-dimensionally arranged in a staggered manner.

[0023] In an exemplary embodiment, the substrate includes a plurality of optical elements, and each optical element corresponds to a corresponding light-emitting portion.

[0024] In an exemplary embodiment, the optical element is a convex lens.

[0025] Preferably, the groove surface is the first surface of a groove in the substrate, and the groove has a symmetrically shaped first surface and a second surface.

[0026] In an exemplary embodiment, the groove is a V-shaped groove, and the V-shaped groove provides the groove surface as a chamfer portion at an end portion located on the substrate surface when separated.

[0027] In an exemplary embodiment, after the separation of the substrate, the second surface of the groove is removed from the light-emitting device.

[0028] In an exemplary embodiment, the groove surface is a curved surface.

[0029] In an exemplary embodiment, the groove surface has an inclination angle of 60° or less with respect to the thickness direction of the substrate.

[0030] In an exemplary embodiment, a method of manufacturing a light-emitting device includes:

[0031] Forming a plurality of light-emitting portions on a first surface of a substrate;

[0032] Forming a plurality of grooves on a second surface of the substrate;

[0033] Forming a film on the second surface;

[0034] Adhering a tape to the second surface;

[0035] Releasing a plurality of light-emitting devices from the tape.

[0036] In an exemplary embodiment, the light-emitting device is an optical chip.

[0037] In an exemplary embodiment, each optical chip includes a plurality of backside-emitting vertical cavity surface emitting lasers.

[0038] In an exemplary embodiment, it further includes forming optical elements on the second surface.

[0039] In an exemplary embodiment, the groove is formed by etching.

[0040] In an exemplary embodiment, the tape includes at least one of a cutting tape and a protective tape. Description of the Drawings

[0041] Figure 1 Figure 1 is a cross-sectional view of an optical device according to Example 1 based on the first embodiment of the present technology.

[0042] Figure 2 Figure 2 is a plan view of an optical device according to Example 1 based on the first embodiment of the present technology.

[0043] Figure 3 Figure 3 is a partially enlarged cross-sectional view of an optical device according to Example 1 based on the first embodiment of the present technology.

[0044] Figure 4 Figure 4 is Figure 1 a partially enlarged view of.

[0045] Figure 5 Figure 5 is a flowchart of an example of a method for manufacturing an optical device in Figure 1 .

[0046] Figure 6 Figure 6 A of Figure 6 and Figure 1 B of

[0047] Figure 7 Figure 7 respectively show a cross-sectional view and a plan view of the manufacturing process of the optical device in Figure 7 . Figure 1 in

[0048] Figure 8 Figure 8 A of Figure 8 and Figure 1 B of

[0049] Figure 9 ​​​​​​​​​​​​​​​​​​Figure 9 A of Figure 9 and B of Figure 1 are respectively a sectional view and a plan view showing the manufacturing process of the optical device in Figure 9 C of Figure 1 is a sectional view showing the manufacturing process of the optical device in

[0050] Figure 10 Figure 10 A of Figure 1 is a sectional view showing the manufacturing process of the optical device in Figure 10 B of Figure 10 is a partial enlarged view of A of

[0051] Figure 11 Figure 11 is a plan view showing Figure 1 the manufacturing process of the optical device in

[0052] Figure 12 Figure 12 A of Figure 12 and B of Figure 1 are respectively a sectional view and a plan view showing the manufacturing process of the optical device in

[0053] Figure 13 Figure 13 A of Figure 13 and B of Figure 1 are respectively sectional views showing the manufacturing process of the optical device in

[0054] Figure 14 Figure 14 A of Figure 14 and B of Figure 1 are respectively sectional views showing the manufacturing process of the optical device in

[0055] Figure 15 Figure 15 A of Figure 1 is a sectional view showing the manufacturing process of the optical device in Figure 15 B of Figure 15 is a partial enlarged view of A of

[0056] Figure 16 Figure 16 A of Figure 16 and B of Figure 1 are respectively sectional views showing the manufacturing process of the optical device in

[0057] Figure 17 Figure 17 is a sectional view of the optical device according to Example 2 of the first embodiment of the present technology.

[0058] ​​​​​​​​​​​​​​​​​Figure 18 Figure 18 is a cross-sectional view of an optical device according to Example 3 of the first embodiment of the present technology.

[0059] Figure 19 Figure 19 (a) of which is a cross-sectional view of an optical device according to Example 4 of the first embodiment of the present technology. Figure 19 (b) of which is a cross-sectional view of an optical device according to Example 5 of the first embodiment of the present technology.

[0060] Figure 20 Figure 20 (a) of which is a cross-sectional view of an optical device according to Example 6 of the first embodiment of the present technology. Figure 20 (b) of which is a cross-sectional view of an optical device according to Example 7 of the first embodiment of the present technology.

[0061] Figure 21 Figure 21 is a partially enlarged cross-sectional view of an optical device according to Example 8 of the first embodiment of the present technology.

[0062] Figure 22 Figure 22 is a partially enlarged cross-sectional view of an optical device according to Example 9 of the first embodiment of the present technology.

[0063] Figure 23 Figure 23 is a partially enlarged cross-sectional view of an optical device according to Example 10 of the first embodiment of the present technology.

[0064] Figure 24 Figure 24 (a) of which is a cross-sectional view of an optical device according to Example 11 of the first embodiment of the present technology. Figure 24 (b) of which is Figure 24 a partially enlarged view of (a).

[0065] Figure 25 Figure 25 (a) of which is a cross-sectional view of an optical device according to Example 1 of the second embodiment of the present technology. Figure 25 (b) of which is a cross-sectional view of an optical device according to Example 2 of the second embodiment of the present technology.

[0066] Figure 26 Figure 26 (a) of which is a cross-sectional view of an optical device according to Example 3 of the second embodiment of the present technology. Figure 26 (b) of which is a cross-sectional view of an optical device according to Example 4 of the second embodiment of the present technology.

[0067] Figure 27 Figure 27 ​​​​​​​​​​​​​​​​​​​It is a cross-sectional view depicting a modification (1) of the chamfered portion.

[0068] Figure 28 Figure 28 It is a cross-sectional view showing a modification (2) of the chamfered portion.

[0069] Figure 29 Figure 29 A of [the figure] is a cross-sectional view of an optical device according to Modification 1 of the first embodiment of the present technology. Figure 29 B of [the figure] is a cross-sectional view of an optical device according to Modification 2 of the first embodiment of the present technology.

[0070] Figure 30 Figure 30 A of [the figure] is a cross-sectional view of an optical device according to Modification 3 of the first embodiment of the present technology. Figure 30 B of [the figure] is a cross-sectional view of an optical device according to Modification 4 of the first embodiment of the present technology.

[0071] Figure 31 Figure 31 A of [the figure] is a cross-sectional view of an optical device according to Modification 5 of the first embodiment of the present technology. Figure 31 B of [the figure] is a cross-sectional view of an optical device according to Modification 6 of the first embodiment of the present technology.

[0072] Figure 32 Figure 32 A of [the figure] is a cross-sectional view of an optical device according to Modification 7 of the first embodiment of the present technology. Figure 32 B of [the figure] is a cross-sectional view of an optical device according to Modification 8 of the first embodiment of the present technology. Figure 32 C of [the figure] is a cross-sectional view of an optical device according to Modification 9 of the first embodiment of the present technology.

[0073] Figure 33 Figure 33 A of [the figure] is a cross-sectional view of an optical device according to Modification 10 of the first embodiment of the present technology. Figure 33 B of [the figure] is a cross-sectional view of an optical device according to Modification 11 of the first embodiment of the present technology.

[0074] Figure 34 Figure 34 It is a cross-sectional view of an optical device according to Modification 12 of the first embodiment of the present technology.

[0075] Figure 35 Figure 35 A to Figure 35 C of [the figure] are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 1.

[0076] ​​​​​​​​​​​​​​​​​Figure 36 Figure 36 from A to Figure 36 and C of Figure 36 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 1, respectively.

[0077] Figure 37 Figure 37 from A to Figure 37 and C of Figure 37 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 1, respectively.

[0078] Figure 38 Figure 38 A of Figure 38 and Figure 38 B of Figure 38 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 1, respectively.

[0079] Figure 39 Figure 39 A of Figure 39 is a cross-sectional view showing the manufacturing process of the optical device according to Comparative Example 1. Figure 39 B of Figure 39 is Figure 39 a partial enlarged view of A of Figure 39 .

[0080] Figure 40 Figure 40 A of Figure 40 and Figure 40 B of Figure 40 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 1, respectively.

[0081] Figure 41 Figure 41 from A to Figure 41 and C of Figure 41 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 2, respectively.

[0082] Figure 42 Figure 42 A of Figure 42 and Figure 42 B of Figure 42 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 2, respectively.

[0083] Figure 43 Figure 43 A of Figure 43 and Figure 43 B of Figure 43 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 2, respectively.

[0084] Figure 44 Figure 44 A of Figure 44 is a cross-sectional view showing the manufacturing process of the optical device according to Comparative Example 2. Figure 44 B of Figure 44 is Figure 44 a partial enlarged view of A of Figure 44 .

[0085] Figure 45 Figure 45 A of Figure 45 and Figure 45 B of Figure 45 are cross-sectional views showing the manufacturing process of the optical device according to Comparative Example 2, respectively.​​​​​​​​​​​​​​​​​​​

[0086] Figure 46 Figure 46 A of Figure 46 and B of

[0087] Figure 47 Figure 47 is a plan view depicting a configuration example of a surface-emitting laser to which the present technology can be applied.

[0088] Figure 48 Figure 48 A of Figure 47 is a cross-sectional view taken along line X-X of Figure 48 B of Figure 47 is a cross-sectional view taken along line Y-Y of

[0089] Figure 49 Figure 49 is a view depicting an example in which an optical device according to an embodiment of the present technology is applied to a distance measurement device.

[0090] Figure 50 Figure 50 is a block diagram depicting an example of the overall configuration of a vehicle control system.

[0091] Figure 51 Figure 51 is an explanatory view showing an example of the installation position of a distance measurement device. Detailed Embodiments

[0092] With reference to the accompanying drawings, suitable embodiments of the present technology will be described in detail. Note that in this specification and the drawings, components having substantially the same functions and configurations are assigned the same reference numerals, and redundant descriptions are omitted. The embodiments described below show typical embodiments of the present technology and do not narrowly interpret the scope of the present technology. Even when an optical device and a method of manufacturing an optical device according to the present technology are described as producing a plurality of beneficial effects, the optical device and the method of manufacturing an optical device according to the present technology only need to produce at least one beneficial effect. The beneficial effects described herein are illustrative and not restrictive, and other beneficial effects may be produced.

[0093] In addition, the description will be in the following order.

[0094] 0. Introduction

[0095] 1. Optical Device According to Example 1 Based on the First Embodiment of the Present Technology

[0096] 2. Optical Device According to Example 2 Based on the First Embodiment of the Present Technology ​​​​​​​​​​​​

[0097] 3. Optical device according to Example 3 of the first embodiment of the present technology

[0098] 4. Optical device according to Example 4 of the first embodiment of the present technology

[0099] 5. Optical device according to Example 5 of the first embodiment of the present technology

[0100] 6. Optical device according to Example 6 of the first embodiment of the present technology

[0101] 7. Optical device according to Example 7 of the first embodiment of the present technology

[0102] 8. Optical device according to Example 8 of the first embodiment of the present technology

[0103] 9. Optical device according to Example 9 of the first embodiment of the present technology

[0104] 10. Optical device according to Example 10 of the first embodiment of the present technology

[0105] 11. Optical device according to Example 11 of the first embodiment of the present technology

[0106] 12. Optical device according to Example 1 of the second embodiment of the present technology

[0107] 13. Optical device according to Example 2 of the second embodiment of the present technology

[0108] 14. Optical device according to Example 3 of the second embodiment of the present technology

[0109] 15. Optical device according to Example 4 of the second embodiment of the present technology

[0110] 16. Variation of the present technology

[0111] 17. Example applied to an electronic device

[0112] 18. Example of applying the optical device to a distance measurement device

[0113] 19. Example of installation of the distance measurement device in a moving body

[0114] <0. Introduction>

[0115] In related art, an optical device including a light-emitting element and a light-receiving element and including an element forming portion on a substrate is known (see, for example, PTL1). Conventional optical devices have been obtained by performing dicing to individualize a plurality of element forming portions that are provided together on a wafer into individual element forming portions. Before the dicing step, thin films such as a protective film, an antireflection film, etc. are usually formed on the wafer. In conventional optical devices, the substrate into which the wafer is diced includes a top corner portion on the thin film side. For example, in the dicing step and the substrate thinning step, a fixing tape is adhered to the surface on the thin film side of the substrate. The tape cuts into the thin film at the top corner portion of the substrate, and thus when the tape is released, problems such as peeling of the thin film together with the tape or breakage of the substrate may occur.

[0116] Therefore, as a result of earnest research, the inventors have developed an optical device according to the present technology as an optical device capable of suppressing problems such as peeling of a thin film (e.g., a protective film, an antireflection film, etc.) deposited on a substrate and peeling of the substrate.

[0117] The optical device according to the present technology is an optical device including a light-emitting function and / or a light-receiving function and intended for sensing, imaging, and communication, and belonging to various technical fields.

[0118] The first and second embodiments of the optical device according to the present technology will be described in detail by using several examples. In the following description, for convenience, the upper side of a cross-sectional view such as Figure 1 is assumed to be the upper side, and the lower side is assumed to be the lower side.

[0119] <1. Optical device according to Example 1 based on the first embodiment of the present technology>

[0120] The optical device according to Example 1 based on the first embodiment of the present technology will be described below with reference to the drawings.

[0121] <<Configuration of the optical device according to the first embodiment>>

[0122] (Overall configuration)

[0123] Figure 1 is a cross-sectional view (taken along the line 1-1 in Figure 2 ) of the optical device 10-1 according to Example 1 based on the first embodiment of the present technology. Figure 2 is a plan view of the optical device 10-1 according to Example 1 based on the first embodiment of the present technology. Figure 3 is a partially enlarged cross-sectional view of the optical device according to Example 1 based on the first embodiment of the present technology (obtained by partially enlarging the cross-section in Figure 2 ). Figure 4 is Figure 1 a partially enlarged view of ( Figure 1(an enlarged view of the area surrounded by alternating long and short dashed lines in

[0124] As Figure 1 depicted as an example, the optical device 10-1 includes an element including a first element forming section ES1 and a plurality of second element forming sections ES2. The first element forming section includes a substrate 100, and the plurality of second element forming sections are provided on one surface (lower surface) of the substrate 100. As an example, the element is a surface-emitting laser array including a plurality of light-emitting sections. As an example, each light-emitting section is a vertical cavity surface-emitting laser (VCSEL) including a first element forming section ES1 and a second element forming section ES2. Here, the plurality of light-emitting sections share the first element forming section ES1, and the light-emitting sections include different second element forming sections ES2. As an example, the first element forming section ES1 includes a substrate 100. The VCSEL as each light-emitting section has an oscillation wavelength λ set to, for example, from 780 nm to 950 nm. As an example, the VCSEL as each light-emitting section is a back-side emission VCSEL that emits light toward the other surface (upper surface) side of the substrate 100.

[0125] As an example, as Figure 2 depicted, the plurality of second element forming sections ES2 are two-dimensionally arranged (for example, in a staggered arrangement). Note that the plurality of second element forming sections ES2 may be, for example, a matrix arrangement, a one-dimensional arrangement, etc.

[0126] As an example, the second element forming section ES2 includes a light-emitting layer 203. The second element forming section ES2 further includes a first reflector 201 and a second reflector 206 that are located above and below the light-emitting layer 203 to sandwich the light-emitting layer 203 in the vertical direction, a first cladding layer 202 provided between the light-emitting layer 203 and the first reflector 201, a second cladding layer 204 provided between the light-emitting layer 203 and the second reflector 206, and an oxidation confinement layer 205 provided in the second reflector 206. The second element forming section ES2 further includes an anode electrode 207 provided on the surface (lower surface) of the second reflector 206 opposite to the light-emitting layer 203 side and a cathode electrode 208 (n-side electrode) provided on one surface (lower surface) of the substrate 100.

[0127] That is, in the second element forming section ES2, the following layers are sequentially stacked on one surface of the substrate 100: a first reflector 201, a first cladding layer 202, a light-emitting layer 203, a second cladding layer 204, a second reflector 206 including an oxidation confinement layer 205, and an anode electrode 207 (p-side electrode).

[0128] As an example, the second element forming section ES2 includes a mesa M, which includes a light-emitting layer 203, a first reflector 201 and a second reflector 206, a first cladding layer 202 and a second cladding layer 204, an oxidation confinement layer 205, and the second reflector 206. An anode electrode 207 is provided at the top (lower end) of the mesa M, and a cathode electrode 208 is provided on one surface (lower surface) of the substrate 100 in a region around the mesa M.

[0129] In each light-emitting section, the first reflector 201, the second reflector 206, and the light-emitting layer 203 form a resonator. As an example, the resonator has a resonator length that is an integer multiple of half the wavelength (λ / 2) of the standing wave generated in the resonator.

[0130] As an example, the optical device 10-1 further includes another substrate 300 bonded to each second element forming section ES2 via bumps 400 ( Figure 3 The first bump 400A and the second bump 400B depicted in are collectively referred to as bumps 400). That is, the surface-emitting laser array as an element of the optical device 10-1 is connected to the other substrate 300 in a flip-chip (junction-down) manner. A laser driver is provided on the other substrate 300.

[0131] As an example, the periphery of the joint between the second element forming section ES2 and the other substrate 300 is filled with an underfill 500 (curable liquid resin for sealing) including an insulating material (e.g., resin) (see Figure 1 ). This is effective in strengthening the joint and suppressing the corrosion of the element and the laser driver.

[0132] (Substrate)

[0133] As an example, the substrate 100 is a semiconductor substrate. Specifically, as an example, the substrate 100 is an n-type semiconductor substrate and includes, for example, n-GaAs.

[0134] (First reflector)

[0135] As an example, the first reflector 201 is a semiconductor multilayer film reflector (semiconductor DBR). Specifically, as an example, the first reflector 201 is an n-type semiconductor DBR and includes, for example, n-AlGaAs layers (high refractive index layer and low refractive index layer) of two different Al compositions alternately laminated to an optical thickness of λ / 4.

[0136] (First cladding layer)

[0137] The first cladding layer 202 is an n-type semiconductor layer and includes, for example, n-AlGaGs. The cladding layer is also referred to as a "spacer layer".

[0138] (Light-emitting layer)

[0139] As an example, the light-emitting layer 203 includes a quantum well structure including a barrier layer and a quantum well layer, and the quantum well layer includes a GaAs-based compound semiconductor (for example, InGaAs / AlGaAs). The quantum well structure may be a single quantum well structure (QW structure) or a multi-quantum well structure (MQW structure). As an example, the light-emitting layer 203 includes a light-emitting region (current injection region) corresponding to the non-oxidized region 205a (current passage region) of the oxidation confinement layer 205 described below. Note that the light-emitting layer 203 may include a plurality of QW structures or a plurality of MQW structures stacked via a tunnel junction. As an example, the light-emitting layer 203 is disposed at the antinode position of the standing wave generated in the resonator. The light-emitting layer 203 is also referred to as an "active layer".

[0140] (Second cladding layer)

[0141] The second cladding layer 204 is a p-type semiconductor layer and includes, for example, p-AlGaAs. The cladding layer is also referred to as a "spacer layer".

[0142] (Second reflector)

[0143] As an example, the second reflector 206 is a semiconductor multilayer film reflector (semiconductor DBR). Specifically, as an example, the second reflector 206 is a p-type semiconductor DBR and includes, for example, p-AlGaAs layers (high refractive index layer and low refractive index layer) of two different Al components alternately stacked to an optical thickness of λ / 4. The reflectivity set for the second reflector 206 is slightly higher than that of the first reflector 201.

[0144] (Oxidation confinement layer)

[0145] As an example, the oxidation confinement layer 205 is disposed inside the second reflector 206 at the node position of the standing wave. The oxidation confinement layer 205 includes a non-oxidized region 205a and an oxidized region 205b surrounding the non-oxidized region 205a. The non-oxidized region 205a includes a semiconductor (for example, p-GaAs) and serves as a current passage region. The oxidized region 205b includes an insulator (for example, Al x O y ), and serves as a current and light confinement region.

[0146] (Anode electrode)

[0147] The anode electrode 207 includes at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, and In. In the case where the anode 207 has a stacked structure, the anode electrode 207 includes materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd. Note that a contact layer (e.g., a p-GaAs layer highly doped with p-type impurities) can be provided between the anode electrode 207 and the second reflector 206.

[0148] (Cathode electrode)

[0149] The cathode electrode 208 includes at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, and In. In the case where the cathode electrode 208 has a stacked structure, the cathode electrode 208 includes materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd. Note that a contact layer (e.g., an n-GaAs layer highly doped with n-type impurities) can be provided between the substrate 100 and the cathode electrode 208.

[0150] (Another substrate)

[0151] As an example, the another substrate 300 is a semiconductor substrate. Specifically, as an example, the another substrate 300 is a silicon substrate. The another substrate 300 is provided with a laser driver as described above. As an example, the laser driver includes a power source and a p-type MOSFET (metal oxide semiconductor field effect transistor) as a switching element. Here, the laser driver includes a plurality of switching elements corresponding to each of the plurality of second element forming portions ES2. Each of the plurality of switching elements includes: a drain connected to a terminal (a terminal of the laser driver) of the anode electrode 207 bonded to the corresponding second element forming portion ES2 via the first bump 400A; and a source connected to the positive electrode of the power source. A terminal of the laser driver connected to the negative electrode of the power source and the cathode electrode 208 are connected via the second bump 400B. A gate voltage can be applied to the gate of each switching element. In addition to the power source and the plurality of switching elements, the laser driver further includes circuit elements such as capacitors, resistors, etc. Note that an n-type MOSFET can be used as each switching element, and the drain can be connected to the negative electrode of the power source and the source can be connected to a terminal (a terminal of the laser driver) of the cathode electrode 208 bonded to the corresponding second element forming portion ES2 via the second bump 400B. The laser driver can independently control the plurality of switching elements and independently drive the plurality of light emitting portions.

[0152] (Convex bump)

[0153] Each of the first convex bump 400A and the second convex bump 400B included in the convex bump 400 is a conductive convex bump including at least one metal selected from, for example, Au, Ag, Cu, Sn, and Pb.

[0154] (Details of the substrate)

[0155] As an example, when viewed in the plan view as depicted in Figure 2 , the substrate 100 as the first element forming portion ES1 is rectangular and includes four sides (ends in four directions) on each of one surface (lower surface) and the other surface (upper surface) opposite to each other. As an example, the substrate 100 includes a chamfered portion 100b at at least one end (e.g., all ends) on the other surface side (upper surface side) opposite to one surface side (lower surface side). The substrate 100 is covered with a thin film 101 from the other surface (upper surface) side. Specifically, the other surface (upper surface) of the substrate 100 and the chamfered portion 100b (or groove surface) are covered with the thin film 101. As Figure 1 shown, each groove surface or chamfered portion 100b may be the surface of a groove between two regions of the substrate, as further explained below. The terms chamfered portion and groove region may be used interchangeably in the present disclosure. Here, the thin film 101 is an antireflection film (AR film).

[0156] As an example, as depicted in Figure 4 , the chamfered portion 100b is an inclined surface formed by cutting off the corner on the other surface side (upper surface side) of the substrate having a rectangular longitudinal section, and the inclined surface is inclined at an angle Φ with respect to the thickness direction (vertical direction) of the substrate 100.

[0157] As Figure 1 depicted, the substrate 100 as the first element forming portion ES1 includes an optical element 100a provided on the other surface (upper surface) of the substrate 100. At least the optical element 100a and the chamfered portion 100b are covered with the thin film 101. As an example, the optical element 100a has a convex lens structure formed on the other surface of the substrate 100. The convex lens structure of the optical element 100a is provided at a plurality of positions corresponding to a plurality of second element forming portions ES2 on the other surface (upper surface) of the substrate 100 (see Figure 2 ). That is, a plurality of optical elements 100a are two-dimensionally arranged (e.g., in a staggered manner) on the other surface (upper surface) of the substrate 100. Each optical element 100a includes a light focusing function.

[0158] The inclination angle Φ of the chamfered portion 100b with respect to the thickness direction of the substrate 100 (see Figure 4)Preferably, it is 60° or less, more preferably 50° or less, still more preferably 40° or less, and further more preferably 30° or less.

[0159] For the chamfered portion 100b, the ratio of the length Dv in the thickness direction of the substrate 100 to the length Dh in the in-plane direction of the substrate 100 is preferably 2 or more, more preferably 3 or more, still more preferably 4 or more, and further more preferably 5 or more.

[0160] The length Dv of the chamfered portion 100b in the thickness direction of the substrate 100 is preferably one-third or less of the thickness T of the substrate 100, more preferably one-fourth or less, still more preferably one-fifth or less, and further more preferably one-sixth or less. In addition, Dv is preferably one-twentieth or more of the thickness T of the substrate 100, more preferably one-fifteenth or more, and still more preferably one-tenth or more. Specifically, for example, when the thickness T of the substrate 100 is 100 μm, Dv is preferably 5 μm or more and 33 μm or less.

[0161] <<Operation of the optical device according to Example 1>>

[0162] Reference will be made to Figure 3 the operation of the optical device 10-1. In the optical device 10-1, when at least one switching element of the laser driver is turned on, in the corresponding light-emitting portion, current flows into the second element forming portion ES2 from the anode electrode 207 side. The current flowing through a part of the anode electrode 207 and the second reflector 206 is limited by the oxidation limiting layer 205, and is injected into the light-emitting layer 203 via another part of the second reflector 206 and the second cladding 204. At this time, the light-emitting layer 203 emits light, and the light reciprocates between the first reflector 201 and the second reflector 206, while being amplified by the light-emitting layer 203 and limited by the oxidation limiting layer 205. When the oscillation condition is satisfied, a laser (focused beam) is emitted from the optical element 100a provided on the other surface (upper surface) of the substrate 100. The current flowing through the light-emitting layer 203 flows out to the laser driver from the cathode electrode 208 via the first cladding 202, the first reflector 201, and the substrate 100.

[0163] <<Manufacturing method of the optical device according to Example 1>>

[0164] Now, reference will be made to Figure 5 the flowchart in etc. to describe the method of manufacturing the optical device 10-1. Here, an integrated series of multiple optical devices 10-1 is generated at once and then divided into individual optical devices 10-1.

[0165] In the first step S1, the second element forming portion ES2 is formed (see Figure 6 A (along Figure 6Cross-sectional view taken along line 6A-6A in B) and Figure 6 B (plan view)). Specifically, a plurality of second element forming portions ES2 for each optical device 10-1 are formed on a wafer 100W which is the material of the substrate 100. Specifically, first, in a deposition chamber, metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) is used to deposit a first reflector 201, a first cladding 202, a light emitting layer 203, a second cladding 204, and a second reflector 206 including an oxide layer containing a material as the oxidation confinement layer 205 in this order on one surface (upper surface) of the wafer 100W. Then, photolithography and etching are used to form a mesa on the substrate 100 which forms part of the second element forming portion ES2. Then, the mesa is exposed to a high-temperature steam atmosphere to oxidize the oxide layer from the side surface to form the oxidation confinement layer 205. Finally, for example, lift-off is used to form an anode electrode 207 on the top of the mesa and a cathode electrode 208 on the area around the mesa of the substrate 100.

[0166] In the next step S2, an optical element 100a is formed (see Figure 7 A (along Figure 7 Cross-sectional view taken along line 7A-7A in B) and Figure 7 B (plan view)). Specifically, the wafer 100W is flipped, and then a convex lens structure is formed as the optical element 100a on the other surface (upper surface) of the wafer 100W using photolithography and etching.

[0167] In the next step S3, a tapered groove VT (a groove having a tapered (e.g., V-shaped) cross-section) is formed (see Figure 8 A (along Figure 8 Cross-sectional view taken along line 8A-8A in B) and Figure 8 B (plan view)). Specifically, an ablation laser treatment is performed on the other surface (upper surface) of the wafer 100W provided with the optical element 100a at a dicing position (predetermined cutting position) to form a tapered groove VT including a chamfered portion 100b as an inner wall surface (inclined surface). Note that the tapered groove VT can be formed by photolithography and etching simultaneously with the formation of the optical element 100a or without performing the formation of the optical element 100a. Note that the "tapered groove" used herein means a groove that gradually narrows towards the bottom.

[0168] In the next step S4, a thin film 101 is formed (see Figure 9 A (along Figure 9 Cross-sectional view taken along line 9A-9A in B) and Figure 9B (plan view). Specifically, for example, a thin film 101 is deposited on the entire upper surface (the upper surface) of the wafer 100W provided with the tapered groove VT by means of vacuum deposition, sputtering, etc.

[0169] In the next step S5, an adhesive dicing tape DT is adhered (see Figure 9 C (cross-sectional view). Specifically, the wafer 100W is flipped, and the dicing tape DT (the adhesive tape used to fix the wafer 100W during dicing) is adhered to the surface (the lower surface) of the wafer 100W on the thin film 101 side.

[0170] In the next step S6, stealth dicing is performed. Specifically, first, in the wafer 100W, a crack C is formed from one surface (the upper surface) side (opposite to the tapered groove VT) at the dicing position where the tapered groove VT is provided. Specifically, a laser beam LB (a focused beam) is irradiated from one surface (the upper surface) side to the wafer 100W at the dicing position to form a modified layer ML corresponding to the starting point of division in the wafer 100W (see Figure 10 A (cross-sectional view taken along Figure 11 the line 10A-10A in Figure 10 B (a partial enlarged view obtained by locally enlarging the part of A in Figure 10 surrounded by alternating long and short dashed lines) and Figure 11 (plan view)). At this time, the crack C extends toward the tapered groove VT where stress concentrates and reaches the bottom of the tapered groove VT without significant bending. Then, the wafer 100W is extended and separated into a plurality of optical chips OC of the component (see Figure 12 A (cross-sectional view taken along Figure 12 the line 12A-12A in B of Figure 12 and B (plan view)). When the optical chips OC are separated from each other, the end of the thin film 101 is formed into a chamfered portion 100b without cutting the tape DT adhered to the end. Note that in step S6, blade dicing can be performed on the wafer 100W to divide and individualize the wafer 100W into optical chips OC. Also in this case, by moving the blade toward the tapered groove VT, the cut can reach the bottom of the tapered groove VT without significant bending.

[0171] In the next step S7, the optical chips OC are picked up (see Figure 13 A). Specifically, for example, an actuator is used to suck and hold each optical chip OC and tear the optical chip OC from the dicing tape DT. In this case, the end of the thin film 101 formed at the chamfered portion 100b is not adhered with the dicing tape DT, and this prevents the portion of the thin film 101 including its end from peeling off from the substrate 100 and the substrate 100 from being damaged.

[0172] In the next step S8, flip chip bonding is performed (see Figure 13 B). Specifically, first, the optical chip OC adsorbed and held by the manipulator is aligned with another wafer 300W so that the anode electrode 207 and the cathode electrode 208 of the second element forming portion ES2 face the corresponding terminals (pre-attached with bumps) of the laser driver. In a predetermined temperature environment, the anode electrode 207 and the corresponding terminal of the laser driver are pressure-bonded via the first bump 400A, and the cathode electrode 208 and the corresponding terminal of the laser driver are pressure-bonded via the second bump 400B.

[0173] In step S9, underfill 500 is filled (see Figure 14 A). Specifically, the periphery of the joint portion between each second element forming portion ES2 of the optical chip OC and another wafer 300W is filled with underfill.

[0174] In step S10, a protective tape PT is adhered (see Figure 14 B). Specifically, the protective tape PT (a sticky tape for protecting the optical chip OC) is adhered to the surface of the optical chip OC on the side of the film 101.

[0175] In step S11, the wafer 300W is thinned (see Figure 15 A). Specifically, a back grinder or a CMP (chemical mechanical polishing machine) device is used to grind the back surface (lower surface) of the wafer 300W to thin the wafer 300W. Here, as Figure 15 depicted in B of Figure 15 (a partial enlarged view of A), the biting amount L of the protective tape PT with respect to the film 101 formed at the chamfered portion 100b in the thickness direction of the wafer 300W is, for example, less than 5 μm, and thus when the length of the chamfered portion 100b in the thickness direction of the wafer 300W is 5 μm or more, the protective tape PT is prevented from adhering to the end portion of the film 101.

[0176] In step S12, the protective tape PT is released. Specifically, the protective tape PT adhered to the surface of the optical chip OC on the side of the film 101 is released in a rolled-up manner. At this time, the end portion of the film 101 formed at the chamfered portion 100b does not adhere to the dicing tape DT, and this prevents the portion of the film 101 including its end portion from peeling off from the substrate 100 and the breakage of the substrate 100.

[0177] In step S13, dicing is performed (see Figure 16 B). Specifically, dicing is performed to divide and separate the wafer 300W into a plurality of other substrates 300.

[0178] <<Manufacturing Method of Optical Device According to Comparative Example 1>>

[0179] will be described briefly with reference to Figure 35 A to Figure 40 B of the manufacturing method of the optical device according to Comparative Example 1.

[0180] (Step 1) Form an element forming portion 2 (e.g., VCSEL (excluding the substrate)) on one surface of the wafer 1W (see Figure 35 A).

[0181] (Step 2) Flip the wafer 1W and form an optical element 1a (e.g., a convex lens structure) on the other surface of the wafer 1W (see Figure 35 B).

[0182] (Step 3) Form a thin film 3 (e.g., an antireflection film) on the other surface of the wafer 1W (see Figure 35 C).

[0183] (Step 4) Attach a dicing tape 4 to the surface of the wafer 1W on the thin film 3 side (see Figure 36 A).

[0184] (Step 5) Perform a laser treatment of stealth dicing on the wafer 1W to form a crack C (see Figure 36 B). Here, the crack C is formed parallel to the thickness direction of the wafer 1W. That is, each substrate 1 into which the wafer 1W is divided includes a right-angled corner portion.

[0185] (Step 6) Perform a division process of stealth dicing on the wafer 1W to divide and separate the wafer 1W into a plurality of optical chips 11 (chips including the substrate 1, a plurality of element forming portions 2, and the thin film 3) (see Figure 36 C). At this time, the dicing tape 4 is attached to the end of the thin film 3 of each optical chip 11.

[0186] (Step 7) Pick up each optical chip 11 (see Figure 37 A). At this time, the portion of the thin film 3 including its end is still attached to the dicing tape 4, and the thin film 3 may peel off from the substrate 1.

[0187] (Step 8) The element forming portion 2 of each optical chip 11 is connected (flip-chip connection) to another wafer 5W via bumps 6 (conductive bumps) (see Figure 37 B and Figure 37 C).

[0188] (Step 9) Fill the periphery of the joint portion between each element forming portion 2 and another wafer 5W with underfill 7 (see Figure 38 A).

[0189] (Step 10) Attach the protective tape 8 to the surface of the optical chip 11 on the side of the film 3 (see Figure 38 B). At this time, the protective tape 8 adheres to the end of the film 3.

[0190] (Step 11) Thin another wafer 5W (see Figure 39 A). Here, as Figure 39 B in Figure 39 A partial enlarged view of A in Figure 39 A partial enlarged view of the part of A surrounded by alternating long and short dashed lines)), the protective tape 8 bites into the end of the film 3 at the corner of the substrate 1 (see Figure 39 inside the dashed circle in B).

[0191] (Step 12) Release the protective tape PT. At this time, the part of the film 3 including its end will peel off together with the protective tape 8 (see Figure 40 A).

[0192] (Step 13) Perform a blade cut on another wafer 5W to divide and separate the wafer 5W into a plurality of substrates 5 (see Figure 40 B).

[0193] When an optical device according to Comparative Example 1 is obtained through the series of steps described above and it is determined during a subsequent inspection step that the film 3 has peeled off, the optical device is determined to be defective.

[0194] <<Manufacturing method of the optical device according to Comparative Example 2>>

[0195] The manufacturing method of the optical device according to Comparative Example 2 will be briefly described with reference to Figure 41 A to Figure 46 B. The manufacturing method of the optical device according to Comparative Example 2 is the same as that of the optical device according to Comparative Example 1 in steps 1 to 4, and thus steps 5 and subsequent steps will be described.

[0196] (Step 5)

[0197] Perform a laser treatment of stealth cutting on the wafer 1W to form a crack C (see Figure 41 A). Here, the crack C initially extends substantially parallel to the thickness direction of the wafer 100W and bends and extends halfway. That is, each substrate 1 into which the wafer 1W is divided includes a brim-shaped part having a top corner.

[0198] (Step 6) Perform a division process of stealth cutting on the wafer 1W to divide and separate the wafer 1W into a plurality of optical chips 11 (chips including the substrate 1, a plurality of component forming parts 2, and the film 3) (see Figure 41 B). At this time, the cutting tape 4 adheres to the end of the film 3.

[0199] (Step 7) Pick up each optical chip 11 (see Figure 41 C). At this time, the portion of the thin film 3 including its end portion remains attached to the dicing tape 4, and the thin film 3 generally peels off from the substrate 1.

[0200] (Step 8) The element formation part 2 of each optical chip 11 is connected (flip-chip connected) via the bumps 6 (conductive bumps) to the terminals provided on another wafer 5W (refer to Figure 42 A and Figure 42 B).

[0201] (Step 9) Fill the periphery of the joint portion between each element formation part 2 and the other wafer 5W with underfill 7 (see Figure 43 A).

[0202] (Step 10) Attach the protective tape 8 to the surface of the optical chip 11 on the thin film 3 side (see Figure 43 B). At this time, the protective tape 8 is attached to the end portion of the thin film 3.

[0203] (Step 11) Grind the back surface of the other wafer 5W to thin the other wafer 5W (see Figure 44 A). Here, as Figure 44 B ( Figure 44 partial enlarged view of A ( Figure 44 partial enlarged view of the portion surrounded by alternating long and short dotted lines of A)) depicts, the protective tape 8 bites into the end portion of the thin film 3 at the apex portion of the brim portion of the substrate 1 (see Figure 44 inside the dotted circle in B).

[0204] (Step 12) Release the protective tape PT. At this time, the portion of the thin film 3 including its end portion generally peels off together with the protective tape 8 (see Figure 45 A), and in addition to the peeling of the portion of the thin film 3 including its end portion, the portion of the substrate 1 including its corner portion may crack and break (see Figure 46 A).

[0205] (Step 13) Perform blade dicing to divide and separate the other wafer 5W into a plurality of substrates 5 (see Figure 45 B and Figure 46 B).

[0206] When the optical device according to Comparative Example 2 is obtained through a series of steps as described above and the peeling of the thin film 3 or the breakage of the substrate 5 is confirmed during the subsequent inspection step, the optical device is determined to be defective.

[0207] <<Effects of the optical device and the method of manufacturing the optical device according to Example 1>>

[0208] The effects of the optical device 10-1 according to Example 1 will be described.

[0209] The optical device 10-1 according to Example 1 includes an element including a first element forming portion ES1 and a second element forming portion ES2. The first element forming portion includes a substrate 100, and the second element forming portion is provided on one surface of the substrate 100. The substrate 100 includes a chamfered portion 100b at an end on the other surface (upper surface) side opposite to the one surface (lower surface side) side.

[0210] According to the optical device 10-1, an optical device capable of suppressing defects (such as peeling of the thin film 101 deposited on the substrate 100 and breakage of the substrate 100) during the manufacturing process can be provided. As a result, according to the optical device 10-1, an optical device capable of improving productivity (yield) can be provided.

[0211] On the other hand, for example, for the optical devices according to Comparative Examples 1 and 2, there is room for improvement in suppressing defects such as peeling of the thin film 3 deposited on the substrate 1 and breakage of the substrate 1 during the manufacturing process. As a result, for the optical devices according to Comparative Examples 1 and 2, there is room for improvement in increasing productivity (yield).

[0212] The substrate 100 includes a chamfered portion 100b at an end on the other surface side, and the first element forming portion ES1 is covered by the thin film 101 from the other surface side. Therefore, since the end of the thin film 101 is formed as the chamfered portion 100b, defects such as peeling of the thin film 101 formed on the substrate 100 and breakage of the substrate 100 during the manufacturing process can be reliably suppressed.

[0213] The substrate 100 includes a chamfered portion 100b at an end on the other surface side, and the other surface and the chamfered portion 100b are covered by the thin film 101. Therefore, since the end of the thin film 101 is formed as the chamfered portion 100b, defects such as peeling of the thin film 101 and breakage of the substrate 100 during the manufacturing process can be reliably suppressed.

[0214] The substrate 100 includes a chamfered portion 100b at an end on the other surface side. The first element forming portion ES1 includes an optical element 100a provided on the other surface of the substrate 100, and at least the optical element 100a and the chamfered portion 100b are covered by the thin film 101. Therefore, defects in the manufacturing process, such as peeling of the thin film 101 covering the optical element 100a and breakage of the optical element 100a, can be suppressed.

[0215] The chamfered portion 100b has an inclination angle of 60° or less with respect to the thickness direction of the substrate 100. Therefore, during the manufacturing process, the taper angle of the tapered groove VT can be set to 120° or less, which helps the linear formation of the crack C. Note that an excessive taper angle (e.g., greater than 120°) may cause the crack C to bend.

[0216] For the chamfered portion 100b, the ratio of the length in the thickness direction of the substrate 100 to the length in the in-plane direction of the substrate 100 is 2 or more. Therefore, during the manufacturing process, the extended crack C can reliably reach the tapered groove VT.

[0217] The length of the chamfered portion 100b in the thickness direction of the substrate 100 is preferably one-third or less of the thickness of the substrate 100. Therefore, damage to the substrate 100 can be suppressed.

[0218] The thin film 101 is preferably an antireflection film. This can prevent light from being reflected from the other surface of the substrate 100 and allows for an improvement in light utilization efficiency.

[0219] Each second element forming portion ES2 includes a light-emitting layer 203. Therefore, the element can be used as a light-emitting array.

[0220] Each second element forming portion ES2 includes a first reflector 201 and a second reflector 206, and the light-emitting layer 203 is sandwiched between the first reflector and the second reflector. Therefore, the element can be used as a surface-emitting laser array.

[0221] The second element forming portion ES2 includes a mesa including the light-emitting layer 203. Therefore, the size of the light-emitting region (current injection region) of the light-emitting layer 203 can be somewhat restricted.

[0222] The substrate 100 is a conductive semiconductor substrate (e.g., an n-GaAs substrate). This helps the generation of the element (e.g., a single epitaxial growth step is sufficient) and allows for the formation of a current path in the substrate 100.

[0223] The optical device 10-1 further includes another substrate 300 joined to the element (e.g., a surface-emitting laser array). Therefore, an optical module in which the optical device 10-1 including the element and a driver (drive circuit) are integrated together can be provided.

[0224] The manufacturing method of the optical device 10-1 according to Example 1 includes: a step of forming a tapered groove VT on the other surface of the wafer 100W at a dicing position, where the wafer 100W is shared by a plurality of first element forming parts ES1 and includes a plurality of second element forming parts ES2 provided on one surface and corresponding to the plurality of first element forming parts ES1; a step of forming a crack C at the dicing position of the wafer 100W from one surface side; and a step of dicing the wafer 100W provided with the plurality of second element forming parts ES2 at the dicing position to obtain a plurality of optical chips OC including the first element forming part ES1 and the second element forming part ES2.

[0225] According to the method of manufacturing the optical device 10-1, an optical device capable of suppressing defects such as peeling of the thin film 101 deposited on the substrate 100 and breakage of the substrate 100 can be manufactured. As a result, according to the method of manufacturing the optical device 10-1, productivity (yield) can be improved.

[0226] In the step of forming the crack C, the crack C is formed by irradiating the dicing position from one surface side of the wafer 100W with a laser. This allows the crack C extended by the laser irradiation to reach the tapered groove VT, and enables the individualization of the optical chip OC including the chamfered part 100b. The individualization of the optical chip OC by the above-described stealth dicing effectively eliminates the drawbacks caused by the wet process or the contact process when performing blade dicing.

[0227] In the step of forming the tapered groove VT, etching can be performed on the wafer 100W from the other surface side to form the tapered groove VT and the optical element 100a. This allows the manufacturing process to be simplified.

[0228] The method of manufacturing the optical device 10-1 includes: a step of forming a thin film 101 on the other surface provided with the tapered groove VT before forming the crack C; a step of adhering a dicing tape DT to the surface of the plurality of optical chips OC on the thin film 101 side after the step of forming the thin film 101 and before the step of forming the crack C; and a step of releasing the plurality of optical chips OC from the dicing tape DT after the obtaining step. This prevents the thin film 101 from peeling off from each optical chip OC, breakage of the substrate 100, etc.

[0229] The method of manufacturing the optical device 10-1 includes: a step of bonding the second element forming part ES2 of the plurality of optical chips OC to another wafer 300W via bumps 400 after the obtaining step; a step of adhering a protection tape PT to the surface of the plurality of optical chips OC opposite to the other wafer 300W; a step of grinding and thinning the other wafer 300W; and a step of releasing the protection tape PT from the plurality of optical chips OC. This prevents the thin film 101 from peeling off from each optical chip OC, breakage of the substrate 100, etc.

[0230] The method of manufacturing the optical device 10-1 includes, after the releasing step, a step of cutting another wafer 300W to obtain a plurality of optical devices 10-1 each including a corresponding one of a plurality of optical chips OC. This enables the optical device 10-1 to be individualized.

[0231] The method of manufacturing the optical device 10-1 includes, after the bonding, a step of filling the periphery of the bonding portion between the second element forming portion ES2 of the plurality of optical chips OC and another wafer 300W with an underfill 500. Accordingly, this produces the effect of strengthening the bonding portion and the effect of suppressing the corrosion of the optical chip OC and the laser driver.

[0232] <2. Optical device according to Example 2 based on the first embodiment of the present technology>

[0233] The optical device according to Example 2 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 17 is a cross-sectional view of an optical device 10-2 according to Example 2 based on the first embodiment of the present technology.

[0234] As Figure 17 depicted, the optical device 10-2 is configured similarly to the optical device 10-1 according to Example 1, except that, as Figure 17 depicted, the substrate 100 is not provided with the thin film 101.

[0235] The optical device 10-2 can be manufactured by a manufacturing method similar to that of the optical device 10-1 according to Example 1, except that the step of forming the thin film 101 (step S4 in Figure 5 ) is not performed.

[0236] The optical device 10-2 is not provided with the thin film 101 and thus does not produce an antireflection effect. However, the optical device 10-2 allows for a simplified manufacturing process and enables suppression of breakage of the substrate 100 (including the optical element 100a) during the manufacturing process.

[0237] <3. Optical device according to Example 3 based on the first embodiment of the present technology>

[0238] The optical device according to Example 3 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 18 is a cross-sectional view of an optical device 10-3 according to Example 3 based on the first embodiment of the present technology.

[0239] As Figure 18 depicted, the optical device 10-3 is configured similarly to the optical device 10-1 according to Example 1, except that the substrate 100 is not provided with the optical element 100a.

[0240] The optical device 10-3 can be manufactured by a manufacturing method similar to that of the optical device 10-1 according to Example 1, except that the step of forming the optical element 100a ( Figure 5 step S2 in

[0241] is not performed). The optical device 10-3 is not provided with the optical element 100a and thus does not produce the effect of focusing the light emitted from the VCSEL. However, the optical device 10-3 allows for simplification of the manufacturing process and enables suppression of peeling of the thin film 101, breakage of the substrate 100, etc. during the manufacturing process.

[0242] <4. Optical device according to Example 4 based on the first embodiment of the present technology>

[0243] The optical device according to Example 4 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 19 A in

[0244] As Figure 19 depicted in A of

[0245] the optical device 10-4 is configured similarly to the optical device 10-1 according to Example 1, except that the element includes a single VCSEL (light emitting part).

[0246] The optical device 10-4 can be manufactured by a manufacturing method similar to that of the optical device 10-1 according to Example 1, except that a single VCSEL is formed and the single VCSEL is connected to another wafer 300W.

[0247] <5. Optical device according to Example 5 based on the first embodiment of the present technology>

[0248] The optical device according to Example 5 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 19 B in

[0249] As Figure 19 depicted in B of

[0250] The optical device 10-5 can be manufactured by a manufacturing method similar to that of the optical device 10-4 according to Example 4, except that the step of forming the thin film 101 is not performed.

[0251] The optical device 10-5 is not provided with the thin film 101 and thus does not produce an antireflection effect. However, the optical device 10-5 allows for a simplified manufacturing process and enables suppression of breakage of the substrate 100 (including the optical element 100a) during the manufacturing process.

[0252] <6. Optical device according to Example 6 based on the first embodiment of the present technology>

[0253] The optical device according to Example 6 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 20 A in

[0254] As Figure 20 depicted in A of

[0255] The optical device 10-6 can be manufactured by a manufacturing method similar to that of the optical device 10-4 according to Example 4, except that the step of forming the optical element 100a is not performed.

[0256] Compared with the optical device 10-4 according to Example 4, the optical device 10-6 is not provided with the optical element 100a and thus does not produce the effect of focusing the light emitted from the VCSEL. However, the optical device 10-6 allows for a simplified manufacturing process and enables suppression of peeling of the thin film 101, breakage of the substrate 100, etc. during the manufacturing process.

[0257] <7. Optical device according to Example 7 based on the first embodiment of the present technology>

[0258] The optical device according to Example 7 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 20 B in

[0259] As Figure 20 depicted in B of

[0260] The optical device 10-7 can be manufactured by a manufacturing method similar to that of the optical device 10-6 according to Example 6, except that the step of forming the thin film 101 is not performed.

[0261] Compared with the optical device 10-6 according to Example 6, the optical device 10-7 is not provided with the thin film 101 and thus does not produce an antireflection effect. However, the optical device 10-7 allows for a simplified manufacturing process and enables suppression of breakage of the substrate 100 (including the optical element 100a) during the manufacturing process.

[0262] <8. Optical device according to Example 8 based on the first embodiment of the present technology>

[0263] The optical device according to Example 8 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 21 is a partial enlarged view of the optical device 10-8 according to Example 8 based on the first embodiment of the present technology (corresponding to Figure 3 ).

[0264] As Figure 21 depicted, the optical device 10-8 according to Example 8 is configured similarly to the optical device 10-1 according to Example 1, except that each VCSEL has an intracavity structure.

[0265] In the second element forming section ES2 of the optical device 10-8, the mesa includes a part (lower part) of the first cladding layer 202, the light emitting layer 203, the second cladding layer 204, and the second reflector 206 including the oxidation confinement layer 205. The cathode electrode 208 is provided in the region around the mesa in the other part (upper part) of the first cladding layer 202.

[0266] The optical device 10-8 may include an undoped semiconductor substrate (e.g., an i-GaAs substrate) as the substrate 100. The optical device 10-8 may include an undoped compound semiconductor (e.g., i-AlGaAs) as the material of the first reflector 201.

[0267] The optical device 10-8 can be manufactured by a manufacturing method similar to that of the optical device 10-1 according to Example 1, except that when forming the second element forming section ES2, the bottom surface of the mesa is located in the first cladding layer 202.

[0268] According to the optical device 10-8, an optical device can be provided that produces an effect similar to that of the optical device 10-1 according to Example 1 and can reduce the series resistance of each VCSEL.

[0269] Note that in the second element forming section ES2 of the optical device 10-8, the mesa may include a part (lower part) of the first reflector 201, the first cladding layer 202, the light-emitting layer 203, the second cladding layer 204, and the second reflector 206 including the oxidation confinement layer 205. In this case, the cathode electrode 208 may be provided in a region around the mesa in the other part (upper part) of the first reflector 201.

[0270] <9. According to the optical device of Example 9 based on the first embodiment of the present technology>

[0271] The optical device according to Example 9 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 22 is a partially enlarged view of the optical device 10-9 according to Example 9 based on the first embodiment of the present technology (corresponding to Figure 3 ).

[0272] As Figure 22 depicted in, the optical device 10-9 according to Example 9 is configured similarly to the optical device 10-1 according to Example 1, except that each light-emitting section is an LED (light-emitting diode). That is, the optical device 10-9 includes an LED array as an element.

[0273] In the second element forming section ES2 of the optical device 10-9, the mesa includes the light-emitting layer 203 and the first cladding layer 202 and the second cladding layer 204 that sandwich the light-emitting layer 203 in the vertical direction.

[0274] The optical device 10-9 can be manufactured by a manufacturing method similar to that of the optical device 10-1 according to Example 1, except that when forming the second element forming section ES2, the first reflector 201 and the second reflector 206 are not deposited.

[0275] According to the optical device 10-9, an optical device including an LED array and producing an effect similar to that of the optical device 10-1 according to Example 1 can be provided.

[0276] <10. According to the optical device of Example 10 based on the first embodiment of the present technology>

[0277] The optical device according to Example 10 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 23 is a partially enlarged view of the optical device 10-10 according to Example 10 based on the first embodiment of the present technology (corresponding to Figure 3 ).

[0278] As Figure 23As depicted, the optical device 10-10 according to Example 10 is configured similarly to the optical device 10-9 according to Example 9, except that each LED has a structure similar to the cavity structure.

[0279] In the second element formation part ES2 of the optical device 10-10, the mesa includes a part (lower part) of the first cladding layer 202, the light-emitting layer 203, and the second cladding layer 204. The cathode electrode 208 is provided in a region around the mesa in the other part (upper part) of the first cladding layer 202.

[0280] In the optical device 10-10, an undoped semiconductor substrate (e.g., i-GaAs substrate) can be used as the substrate 100. In the optical device 10-8, an undoped compound semiconductor (e.g., i-AlGaAs) can also be used as the material of the first reflector 201.

[0281] The optical device 10-10 can be manufactured by a manufacturing method similar to that of the optical device 10-9 according to Example 9, except that when forming the second element formation part ES2, the bottom surface of the mesa is located in the first cladding layer 202.

[0282] According to the optical device 10-10, an optical device can be provided that produces an effect similar to that of the optical device 10-9 according to Example 9 and can reduce the series resistance of each light-emitting part (each LED).

[0283] <11. Optical device according to Example 11 based on the first embodiment of the present technology>

[0284] The optical device according to Example 11 based on the first embodiment of the present technology will be described below with reference to the drawings. Figure 24 A of is a cross-sectional view of the optical device 10-11 according to Example 11 based on the first embodiment of the present technology. Figure 24 B of is Figure 24 A partial enlarged view of A of ( Figure 24 A partial enlarged view of the part of A of surrounded by alternating long and short dashed lines).

[0285] As Figure 24 As depicted in A of, in the optical device 10-11 according to Example 11, the element junction including the first element formation part ES1 and the second element formation part ES2 is connected upward to another substrate 300.

[0286] In the optical device 10-11, the substrate 100 (e.g., n-GaAs substrate) includes a chamfered part 100b at an end on the side of one surface (upper surface) where a plurality of second element formation parts ES2 are provided.

[0287] In the optical device 10-11, the mesas of the plurality of second element constituent parts ES2 are provided with the insulating film 209 as a thin film and the anode electrode 207 as a thin film in common (see Figure 24 A and Figure 24 B). The end portions of the anode electrode 207 and the insulating film 209 are disposed on the chamfered portion 100b. The anode electrode 207 includes an opening serving as an emission port on the central portion of each mesa.

[0288] The anode electrode 207 is connected to a terminal 302 provided on another substrate 300 through a bonding wire BW at a position close to the chamfered portion 100b of one surface of the substrate 100. In an exemplary embodiment, the bonding wire and / or the electrode is provided as a thin film 101 on the upper surface of the substrate 100, for example, Figure 48 In the embodiment shown in FIG. 1 , the groove surface or chamfered portion 100 b is covered by a bonding wire and / or an electrode. In an example, the bonding wire and / or the electrode is preferably an Au film. In addition, the film 101 may include multiple layers, such as an anode electrode 207 and an insulating film 209.

[0289] In the optical device 10-11, the cathode electrode 208 is firmly provided on the other surface (lower surface) side of the substrate 100. The cathode electrode 208 is bonded to a terminal 301 provided on another substrate 300 (a terminal of the laser driver on the negative side).

[0290] In the manufacturing process of the optical device 10 - 11 , a dicing tape and a protective tape are adhered to the surface of the optical chip on the side of the plurality of second element constituent portions ES2 .

[0291] According to the optical device 10 - 11 , an optical device capable of suppressing defects such as peeling of the anode electrode 207 and the insulating film 209 and breakage of the substrate 100 can be provided.

[0292] <12. Optical device according to Example 1 based on the second embodiment of the present technology>

[0293] An optical device according to Example 1 according to a second embodiment of the present technology will be described below with reference to the drawings. Figure 25 A is a cross-sectional view of an optical device 20 - 1 according to Example 1 based on the second embodiment of the present technology.

[0294] like Figure 25As depicted by A, the element of the optical device 20-1 is a solid-state image sensor (image sensor). A plurality of photoelectric conversion elements 102 (e.g., photodiodes) are provided in a substrate 100 (semiconductor substrate, such as a Si substrate). The plurality of photoelectric conversion elements 102 are two-dimensionally arranged in the in-plane direction (e.g., matrix arrangement, staggered arrangement, etc.) on the substrate 100. A chamfered portion 100b is provided at an end portion on one surface side (upper surface side) of the substrate 100. One surface (upper surface) of the substrate 100 and the chamfered portion 100b are covered with a thin film 101 (e.g., antireflection film). A color filter 103 and a microlens 104 corresponding to the photoelectric conversion element 102 are provided on the thin film 101 in this order. That is, the solid-state image sensor of the optical device 20-1 includes a pixel array that includes a plurality of pixels arranged two-dimensionally, and each pixel includes a photoelectric conversion element 102, a color filter 103, and a microlens 104. In the optical device 20-2, the first element forming portion ES1 includes the substrate 100, the color filter 103, and the microlens 104. Note that at least one of the color filter 103 and the microlens 104 can be omitted from each pixel. Here, the solid-state image sensor is shown as an area sensor, but it can be a linear sensor. An inter-pixel light-shielding film may be provided between adjacent pixels.

[0295] A first wiring layer 211, a second wiring layer 212, and a substrate 213 (e.g., semiconductor substrate, such as a Si substrate including a built-in logic circuit and a built-in memory circuit) constituting the second element forming portion ES2 are laminated on the other surface (lower surface) of the substrate 100 from the other surface side.

[0296] The first wiring layer 211 is electrically connected to the substrate 100 via a through hole, for example. The second wiring layer 212 is electrically connected to the substrate 213 via a through hole, for example. The first wiring layer 211 and the second wiring layer 212 are electrically connected by metal bonding, for example.

[0297] In the optical device 20-1, during the manufacturing process, a dicing tape and a protective tape are adhered to the surface of the optical chip on the side of the first element forming portion ES1.

[0298] According to the optical device 20-1, an optical device including a solid-state image sensor and capable of suppressing defects such as peeling of the thin film 101 deposited on the substrate 100 and breakage of the substrate 100 can be provided.

[0299] <13. According to the optical device of Example 2 based on the second embodiment of the present technology>

[0300] The optical device according to Example 2 based on the second embodiment of the present technology will be described below with reference to the drawings. Figure 25 B is a cross-sectional view of the optical device 20-2 according to Example 2 based on the second embodiment of the present technology.

[0301] The optical device 20-2 is configured similarly to the optical device 20-1 according to Example 1, except that the optical device 20-2 includes a solid-state image sensor including a single pixel.

[0302] The optical device 20-2 can be manufactured by a manufacturing method similar to the manufacturing method of the optical device 20-1 according to Example 1.

[0303] According to the optical device 20-2, an optical device including a solid-state image sensor including a single pixel and producing an effect similar to that of the optical device 20-1 according to Example 1 can be provided.

[0304] <14. Optical device according to Example 3 based on the second embodiment of the present technology>

[0305] The optical device according to Example 3 based on the second embodiment of the present technology will be described below with reference to the drawings. Figure 26 A of FIG. is a cross-sectional view of an optical device 20-3 according to Example 3 based on the second embodiment of the present technology.

[0306] The optical device 20-3 is configured similarly to the optical device 20-1 according to Example 1, except that the substrate 100 is not provided with the thin film 101.

[0307] The optical device 20-3 can be manufactured by a manufacturing method similar to the manufacturing method of the optical device 20-1 according to Example 1, except that the substrate 100 is not provided with the thin film 101.

[0308] The optical device 20-3 is not provided with the thin film 101 and thus does not produce an antireflection effect. However, the optical device 20-3 allows for a simplified manufacturing process and can suppress breakage of the substrate 100 during the manufacturing process.

[0309] <15. Optical device according to Example 4 based on the second embodiment of the present technology>

[0310] The optical device according to Example 4 based on the second embodiment of the present technology will be described below with reference to the drawings. Figure 26 B of FIG. is a cross-sectional view of an optical device 20-4 according to Example 4 based on the second embodiment of the present technology.

[0311] The optical device 20-4 is configured similarly to the optical device 20-3 according to Example 3, except that the optical device 20-4 includes a solid-state image sensor including a single pixel.

[0312] The optical device 20-4 can be manufactured by a manufacturing method similar to the manufacturing method of the optical device 20-2 according to Example 2, except that the substrate 100 is not provided with the thin film 101.

[0313] According to the optical device 20-4, an optical device can be provided that includes a solid-state image sensor including a single pixel and produces an effect similar to that of the optical device 20-3 according to Example 3.

[0314] <16. Variations of the present technology>

[0315] Modifications can be made to the present technology without being limited by the examples of the above-described embodiments.

[0316] (Variation example (1) of the chamfered portion 100b)

[0317] For example, in each instance of each of the above-described embodiments, the chamfered portion 100b can be a downwardly protruding curved surface as depicted in Figure 27 . In this case, during the manufacturing process, the curved surface in Figure 27 is obtained by forming a tapered groove in the substrate 100 such that the tapered groove includes an inner wall surface corresponding to the downwardly protruding curved surface (a curved surface corresponding to a combination of the curved surface in [[ID=28 and a curved surface that is symmetric to the curved surface in ​ ).

[0318] (Variation example (2) of the chamfered portion 100b)

[0319] For example, in each instance of each of the above-described embodiments, the chamfered portion 100b can be an upwardly protruding curved surface as depicted in ​ . In this case, during the manufacturing process, the curved surface in ​ is obtained by forming a tapered groove in the substrate 100 such that the tapered groove includes an inner wall surface corresponding to the upwardly protruding curved surface (a curved surface corresponding to a combination of the curved surface in ​ and a curved surface that is symmetric to the curved surface in ​ ).

[0320] (Optical device according to Variation Example 1 based on the First Embodiment)

[0321] ​ The optical device 10-M1 according to Variation Example 1 based on the First Embodiment depicted in A of ​ is configured similarly to the optical device 10-3 according to Example 3 based on the First Embodiment (see

[0322] (Optical device according to Variation Example 2 based on the First Embodiment)

[0323] ​The optical device 10-M2 according to Modification 2 based on the first embodiment depicted in B is configured similarly to the optical device 10-M1 according to Modification 1, except that the underfill 500 is not provided.

[0324] (Optical device according to Modification 3 based on the first embodiment)

[0325] ​ The optical device 10-M3 according to Modification 3 based on the first embodiment depicted in A is configured similarly to the optical device 10-1 according to Example 1 based on the first embodiment (see ​ ), except that the other substrate 300, the bumps 400, and the underfill 500 are omitted.

[0326] (Optical device according to Modification 4 based on the first embodiment)

[0327] ​ The optical device 10-M4 according to Modification 4 based on the first embodiment depicted in B is configured similarly to the optical device 10-2 according to Example 2 based on the first embodiment (see ​ ), except that the other substrate 300, the bumps 400, and the underfill 500 are omitted.

[0328] (Optical device according to Modification 5 based on the first embodiment)

[0329] ​ The optical device 10-M5 according to Modification 5 based on the first embodiment depicted in A is configured similarly to the optical device 10-3 according to Example 3 based on the first embodiment (see ​ ), except that the other substrate 300, the bumps 400, and the underfill 500 are omitted.

[0330] (Optical device according to Modification 6 based on the first embodiment)

[0331] ​ The optical device 10-M6 according to Modification 6 based on the first embodiment depicted in B is configured similarly to the optical device 10-M1 according to Modification 1 (see ​ A), except that the other substrate 300, the bumps 400, and the underfill 500 are omitted.

[0332] (Optical device according to Modification 7 based on the first embodiment)

[0333] ​ The optical device 10-M7 according to Modification 7 based on the first embodiment depicted in A is configured similarly to the optical device 10-M6 according to Modification 6 (see​ B) is similarly configured, except that the substrate 100 includes a chamfered portion 100b at an end portion on the side of one surface (upper surface) where the second element forming portion ES2 is provided.

[0334] (Optical device according to Modification Example 8 based on the first embodiment)

[0335] ​ The optical device 10-M8 according to Modification Example 8 based on the first embodiment depicted in B) and the optical device 10-M7 according to Modification Example 7 (see ​ A) are similarly configured, except that one surface (upper surface) of the substrate 100, the chamfered portion 100b, and the second element forming portion ES2 are covered with a thin film 210 including an insulating film and an anode electrode provided on the insulating film. The anode electrode of the thin film 210 may be provided with an opening serving as an emission port.

[0336] (Optical device according to Modification Example 9 based on the first embodiment)

[0337] ​ The optical device 10-M9 according to Modification Example 9 based on the first embodiment depicted in C) and the optical device 10-M8 according to Modification Example 8 (see ​ B) are similarly configured, except that the substrate 100 also includes a chamfered portion 100b at an end portion on the side of the other surface (lower surface).

[0338] (Optical device according to Modification Example 10 based on the first embodiment)

[0339] ​ The optical device 10-M10 according to Modification Example 10 based on the first embodiment depicted in A) and the optical device 10-M5 according to Modification Example 5 (see ​ A) are similarly configured, except that the substrate 100 also includes a chamfered portion 100b at an end portion on the side of one surface (lower surface) where the second element forming portion ES2 is provided.

[0340] (Optical device according to Modification Example 11 based on the first embodiment)

[0341] ​ The optical device 10-M11 according to Modification Example 11 based on the first example depicted in B) and the optical device 10-M6 according to Modification Example 6 (see ​ B) are similarly configured, except that the substrate 100 also includes a chamfered portion 100b at an end portion on the side of one surface (lower surface) where the second element forming portion ES2 is provided.

[0342] (Optical device according to Modification 12 based on the first embodiment)

[0343] ​ The distance measuring device is constituted by the optical device 10-M12 according to Modification 11 based on the first embodiment as depicted in . The optical device 10-M12 is configured substantially similarly to the optical device 10-1 according to Example 1 based on the first embodiment, except that the optical device 10-M12 includes a light receiving element 301 provided on another substrate 300.

[0344] In the optical device 10-M12, as an example, the other substrate is a Ge substrate provided with a laser driver and an IC including a light receiving circuit. The light receiving circuit includes, for example, an A / D converter, a TOF (Time of Flight) calculation unit, etc.

[0345] As an example, the light receiving element 301 is provided such that the light receiving surface is exposed in a hole portion around an implementation region on the surface of the other substrate 300 where an element (surface emitting laser array) is implemented. As an example, the light receiving element 301 is an APD (Avalanche Photo Diode).

[0346] The optical device 10-M12 can be manufactured by a manufacturing method similar to that of the optical device 10-1 according to Example 1 based on the first embodiment, except that the other substrate 300 is provided with an IC and the light receiving element 301.

[0347] According to the optical device 10-M12, a high-performance TOF module that produces an effect similar to that of the optical device 10-1 according to Example 1 based on the first embodiment can be provided, which includes a surface emitting laser array and a light receiving element 301.

[0348] (Modification of the surface emitting laser of the optical device according to the present technology)

[0349] ​ is a plan view depicting a surface emitting laser 2000 corresponding to a modification of the surface emitting laser of the optical device according to the present technology. ​ A of ​ ​ is a cross-sectional view taken along line X-X in ​ . ​ B of ​ ​ is a cross-sectional view taken along line Y-Y in ​ .

[0350] The component layers of the surface emitting laser 2000 are stacked on a substrate 2001. The substrate 2001 may include a semiconductor, such as GaAs, InGaAs, InP, InAsP, etc.

[0351] The surface emitting laser 2000 includes a protection region 2002 (​ A of ​ the transparent gray area in B). As ​ depicted in, the protection area 2002 is circular in the plan view, but may have other shapes such as an ellipse, a polygon, etc. The protection area 2002 is not limited to a specific shape. The protection area 2002 includes a material that causes electrical separation and is, for example, an area where ions are implanted.

[0352] In addition, as ​ A of ​ B depicts, the surface-emitting laser 2000 includes a first electrode 2003 and a second electrode 2004. As ​ depicted in, the shape of the first electrode 2003 is like a ring with a discontinuous part (interrupted part), i.e., an open ring, as seen in the plan view. However, the first electrode 2003 is not limited to a specific shape. As ​ A of ​ B depicts, the second electrode 2004 is in contact with the substrate 2001. The first electrode 2003 and the second electrode 2004 include a conductive material such as Ti, Pt, Au, AuGeNi, PdGeAu, etc. Each of the first electrode 2003 and the second electrode 2004 may have a single-layer structure or a stacked structure.

[0353] In addition, the surface-emitting laser 2000 includes a trench 2005 provided around the protection area 2002. As an example, ​ depicts a structure in which trenches 2005 that are rectangular in the plan view are provided at six points. However, the number of trenches 2005 and the shape of the trenches 2005 in the plan view are not limited to specific numbers and shapes. The trench 2005 is an opening for forming an oxidation confinement layer 2006 (including an oxidation region 2006a and a non-oxidation region 2006b). In the process of manufacturing the surface-emitting laser 2000, the oxidation region 2006a of the oxidation confinement layer 2006 is formed by feeding high-temperature steam through the trench 2005. For example, the oxidation region 2006a is Al2O3 formed due to the oxidation of an AlAs or AlGaAs layer. Any dielectric can be embedded in the trench 2005 after the step of forming the oxidation confinement layer 2006. In addition, surface coating can be performed using a dielectric film.

[0354] In addition, the surface-emitting laser 2000 includes a dielectric opening 2008 (contact hole) provided in a dielectric layer 2007 on the first electrode 2003. The dielectric layer 2007 may have a stacked structure or a single-layer structure as ​ A of ​ B depicts. As an example, the dielectric layer 2007 includes silicon oxide, silicon nitride, etc. As ​As depicted, the dielectric opening 2008 has the same shape as that of the first electrode 2003. However, the shape of the dielectric opening 2008 is not limited to the shape of the first electrode 2003 and may be partially formed on the first electrode 2003. The dielectric opening 2008 is filled with a conductive material (not shown), and the conductive material is in contact with the first electrode 2003.

[0355] In addition, as ​ depicted in A of ​ and B of

[0356] depicted in, the surface-emitting laser 2000 includes an optical opening 2009 inside the first electrode 2003. The surface-emitting laser 2000 emits a light beam through the optical opening 2009. In addition, in the surface-emitting laser 2000, the oxidized region 2006a of the oxidation confinement layer 2006 serves as a current and light confinement region for restricting current and light. The non-oxidized region 2006b of the oxidation confinement layer 2006 is located below the optical opening 2009 and serves as a current and light passage region through which current and light pass.

[0357] In addition, the surface-emitting laser 2000 includes a first multilayer reflector 2011 and a second multilayer reflector 2012. As an example, the multilayer reflector is a semiconductor multilayer reflector and is also referred to as a distributed Bragg reflector.

[0358] In the description of this configuration example, as an example, the surface-emitting laser 2000 is a front-emitting surface-emitting laser. However, the surface-emitting laser 2000 may be configured as a back-emitting surface-emitting laser.

[0359] As ​ depicted in A of ​ and depicted in B of, the basic diameter of the surface-emitting laser 2000 in the configuration example is the diameter d of the virtual circle defined by the trench 2005.

[0360] As an example, the surface-emitting laser 2000 in the configuration example is manufactured by the processes of steps 1 to 8 described below.

[0361] (Step 1) The first multilayer reflector 2011, the active layer 2013, the selective oxidation layer that becomes the oxidation confinement layer 2006, and the second multilayer reflector 2012 are epitaxially grown on the front surface of the substrate 2001.

[0362] (Step 2) For example, lift-off is used to form the first electrode 2003 on the second multilayer reflector 2012.

[0363] (Step 3) For example, lithography is used to form the trench 2005.

[0364] (Step 4) Expose the side surface of the selective oxidation layer, and selectively oxidize the selective oxidation layer from the side surface to form the oxidation confinement layer 2006.

[0365] (Step 5) Use ion implantation or the like to form the protection region 2002.

[0366] (Step 6) For example, use chemical vapor deposition, sputtering or the like to deposit the dielectric layer 2007.

[0367] (Step 7) For example, use lithography to form the dielectric opening 2008 in the dielectric layer 2007 to expose the contact of the first electrode 2003.

[0368] (Step 8) Grind and thin the back surface of the substrate 2001, and then form the second electrode 2004 on the back surface of the substrate 2001.

[0369] The number, arrangement, thickness, arrangement order, symmetry, etc. of the layers constituting the surface-emitting laser 2000 are illustrative and can be appropriately changed. That is, compared with ​ , ​ A of ​ and B of

[0370] The surface-emitting laser 2000 may include more or fewer layers, different layers, layers with different structures, or layers with different arrangements.

[0371] (Other variations)

[0372] For example, when the light-emitting part is a VCSEL, the current confinement performed is not limited to the effect of the oxidation confinement layer. For example, current confinement can be performed by a circular ion implantation region, or can be performed by QWI, an embedded tunnel junction, etc., where, for example, Ga vacancy diffusion is used to provide a bandgap energy difference between the inside and outside of the aperture to confine carriers.

[0373] For example, when the light-emitting part is a VCSEL, instead of or in addition to being provided in the second reflector 206, the oxidation confinement layer can be provided in the first reflector 201, the first cladding layer 202, and the second cladding layer 204.

[0374] For example, the optical confinement performed when the light-emitting part is a VCSEL is not limited to the effect of the oxidation confinement layer. For example, a stepped portion may be provided in the resonator to provide a difference in refractive index between the inside and the outside of the aperture, such that the refractive index is lower outside the aperture than inside the aperture.

[0375] For example, when the light-emitting part is an LED, a reflector may be provided on one side of the light-emitting layer.

[0376] For example, the substrate 100 may be a Si substrate, a Ge substrate, a GaN substrate, an InP substrate, a SiC substrate, or the like. In addition to epitaxial growth of the semiconductor layer, an element may be formed by bonding a hetero substrate. The light-emitting layer of the light-emitting part (e.g., VCSEL, LED, etc.) may include a material having any emission wavelength included in the wavelength band from 200 nm to 2000 nm.

[0377] When the light-emitting part is a VCSEL, each of the first reflector 201 and the second reflector 206 is not limited to a semiconductor, but may include, for example, one or two selected from semiconductors, dielectrics, and metals.

[0378] The first reflector 201 may be provided opposite to the light-emitting layer 203 side of the substrate 100. That is, the first element forming portion ES1 may include the first reflector 201 in addition to the substrate 100.

[0379] When the element is a light-emitting element (VCSEL, LED, etc.), the conductivity types (n-type and p-type) on one side and the other side of the light-emitting layer may be interchanged.

[0380] The optical element provided on the substrate 100 may be separated from the substrate 100. The optical element is not limited to a convex lens structure, but may be, for example, a concave lens structure, a free-form lens structure, or a mirror structure (e.g., a plane mirror, a convex mirror, a concave mirror, a free-form mirror, etc.). The lens structure or the mirror structure may include a metasurface.

[0381] Any part of the configurations of the optical devices in the above examples and modifications may be combined with each other to the extent that there is no contradiction between the configurations.

[0382] In the above examples and modifications, the material, conductivity type, thickness, width, numerical value, shape, size, etc. of each layer constituting the optical device may be appropriately changed to the extent that the optical device functions as an optical device.

[0383] <17. Examples of Application to Electronic Devices>

[0384] The technology according to the present disclosure (this technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure can be applied to devices (such as distance measurement devices, shape recognition devices, etc.) installed in any type of moving body (such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility tools, airplanes, drones, ships, robots, etc.), optical communication devices, and low-power devices (such as smart phones, smart watches, tablet computers, mice, etc.).

[0385] The optical device according to the present technology can be applied as, for example, a device that optically forms or displays an image (such as a laser printer, a laser copier, a projector, a head-mounted display, a head-up display, etc.) or a complete display system, or a light receiving device (solid image sensor) of a camera. The optical device according to the present technology can also be applied to a light source device for illumination.

[0386] <18. Example of applying the optical device to a distance measurement device>

[0387] An application example of the optical device according to the above-described embodiments and modification examples will be described below.

[0388] ​ An example showing the overall configuration of a distance measurement device 1000 (distance measurement device) including an optical device 10-1 is presented. The distance measurement device 1000 is configured to measure the distance to an object S using the TOF (time of flight) method. The distance measurement device 1000 includes an optical device 10-1 as a light source. The distance measurement device 1000 includes, for example, an optical device 10-1, a light receiving device 125, lenses 115 and 130, a signal processing unit 140, a control unit 150, a display unit 160, and a storage unit 170.

[0389] The light receiving device 125 detects the light reflected from the object S. The lens 115 is configured to parallelize the light emitted from the optical device 10-1 into a parallel light beam and is a collimating lens. The lens 130 is configured to be a lens that focuses the light reflected from the object S and guides the light to the light receiving device 125 and is a focusing lens. The light receiving device 125 can include any one of the optical devices 20-1 to 20-4 (optical devices including solid image sensors) according to Examples 1 to 4 based on the second embodiment described above.

[0390] The signal processing unit 140 is a circuit that generates a signal corresponding to the difference between the signal received from the optical receiving device 125 and the reference signal received from the control unit 150. The control unit 150 includes, for example, a time-to-digital converter (TDC). The reference signal can be the signal received from the control unit 150 or can be the output signal from a detection unit that directly detects the output from the optical device 10-1. For example, the control unit 150 is a processor that controls the optical device 10-1, the optical receiving device 125, the signal processing unit 140, the display unit 160, and the storage unit 170. The control unit 150 is a circuit that measures the distance to the object S based on the signal generated by the signal processing unit 140. The control unit 150 generates an image signal for displaying information related to the distance to the object S and outputs the image signal to the display unit 160. The display unit 160 displays information related to the distance to the object S based on the image signal received from the control unit 150. The control unit 150 stores information related to the distance to the object S in the storage unit 170.

[0391] In this application example, instead of the optical device 10-1, any one of the optical devices 10-2 to 10-11, 10-M1 to 10-M12 can also be applied as the light source of the distance measurement device 1000.

[0392] <19. Example of Applying the Distance Measurement Device to a Moving Body>

[0393] ​ It is a block diagram showing a configuration example of the overall configuration of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0394] The vehicle control system 12000 includes a plurality of electronic control units connected together via a communication network 12001. In ​ the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. ​ A microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network I / F (interface) 12053 are also shown as the functional configurations of the integrated control unit 12050.

[0395] The drive system control unit 12010 controls the operation of devices associated with the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 serves as a control device for a driving force generation device (such as an internal combustion engine, a drive motor, etc.) that generates the driving force of the vehicle, a driving force transmission mechanism that transmits the driving force to the wheels, a steering mechanism that adjusts the steering angle of the wheels, a braking device that generates the braking force of the vehicle, etc.

[0396] The vehicle body system control unit 12020 controls the operations of various devices installed in the vehicle body according to various programs. For example, the vehicle body system control unit 12020 serves as a control device for a keyless entry system, a smart key system, an electric window device, or various lights such as headlights, taillights, turn signals, or fog lights. In this case, the vehicle body system control unit 12020 can receive the input of radio waves and signals for various switches sent from a portable device that replaces the key. The vehicle body system control unit 12020 receives the input of radio waves or signals to control the vehicle door lock device, the electric window device, the lights, etc.

[0397] The out-vehicle information detection unit 12030 detects the out-vehicle information of the vehicle on which the vehicle control system 12000 is mounted. For example, the out-vehicle information detection unit 12030 is connected to the distance measurement device 12031. The distance measurement device 12031 includes the above-described distance measurement device 1000. The out-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object (object S) outside the vehicle to obtain the distance data obtained through this measurement. Based on the obtained distance data, the out-vehicle information detection unit 12030 can perform object detection processing for a person, a vehicle, an obstacle, a sign, etc.

[0398] The in-vehicle information detection unit 12040 detects the in-vehicle information. The in-vehicle information detection unit 12040 is connected, for example, to the driver state detection unit 12041 that detects the state of the driver. The driver state detection unit 12041 includes a camera that captures an image of the driver, and based on the detection information received from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue or concentration, or determine whether the driver is dozing off.

[0399] Based on the in-vehicle and out-vehicle information obtained by the out-vehicle information detection unit 12030 or the in-vehicle information detection unit 12040, the microcomputer 12051 can calculate the control target values of the driving force generation device, the steering mechanism, or the braking device, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including anti-collision or shock absorption for the vehicle, adaptive control based on the inter-vehicle distance, constant speed driving, collision alarm for the vehicle, lane departure alarm for the vehicle, etc.

[0400] In addition, based on information related to the vehicle surroundings obtained by the out-vehicle information detection unit 12030 or the in-vehicle information detection unit 12040, the drive force generation device, the steering mechanism, the control device, etc. are controlled, and thus the microcomputer 12051 can execute coordinated control for autonomous driving, in which the vehicle travels autonomously without relying on the driver's operation or the like.

[0401] In addition, the microcomputer 12051 can output a control instruction to the vehicle body system control unit 12020 based on the out-vehicle information obtained by the out-vehicle information detection unit 12030. For example, the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the oncoming vehicle detected by the out-vehicle information detection unit 12030, and can execute cooperative control for preventing glare, for example, switching from high beam to low beam.

[0402] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of notifying visual or auditory information to the vehicle occupants or the outside. In ​ the example, the output devices are shown as the audio speaker 12061, the display unit 12062, and the instrument panel 12063. For example, the display unit 12062 may include at least one of an in-vehicle display and a head-up display.

[0403] ​ is a diagram depicting an example of the installation position of the distance measurement device 12031.

[0404] In ​ the vehicle 12100 includes distance measurement devices 12101, 12102, 12103, 12104, and 12105 as the distance measurement device 12031.

[0405] The distance measurement devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper and rear door, upper part of the windshield inside the vehicle 12100, etc. For the distance measurement device 12101 provided at the front nose and the distance measurement device 12105 provided at the upper part of the windshield inside, data related to the front of the vehicle 12100 is mainly obtained. The distance measurement devices 12102 and 12103 provided at the side mirrors mainly obtain data related to the sides of the vehicle 12100. The distance measurement device 12104 provided at the rear bumper or rear door mainly obtains data related to the rear of the vehicle 12100. The data related to the front obtained by the distance measurement devices 12101 and 12105 is mainly used to detect passengers, obstacles, traffic lights, traffic signs, etc.

[0406] Note that ​An example of the detection ranges of the distance measurement devices 12101 to 12104 is shown. Detection range 12111 depicts the detection range of the distance measurement device 12101 provided at the front nose, detection ranges 12112 and 12113 depict the detection ranges of the distance measurement devices 12102 and 12103 provided at the respective side mirrors, and detection range 12114 depicts the detection range of the distance measurement device 12104 provided at the rear bumper or the rear door.

[0407] For example, based on the distance data obtained from the distance measurement devices 12101 to 12104, the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the temporal change of the distance (relative to the speed of the vehicle 12100) are determined, and the microcomputer 12051 can thereby extract a three-dimensional object that is closest to the vehicle 12100 on the driving path of the vehicle 12100 and traveling in a direction substantially the same as that of the vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. In addition, the microcomputer 12051 can preset the inter-vehicle distance to be set on the near side of the preceding vehicle and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. As described above, cooperative control for autonomous driving can be performed, in which the vehicle travels autonomously without relying on the driver's operation or the like.

[0408] For example, based on the distance data obtained from the distance measurement devices 12101 to 12105, the microcomputer 12051 can classify three-dimensional object data regarding three-dimensional objects into three-dimensional objects such as two-wheeled vehicles, standard-sized vehicles, large vehicles, passengers, utility poles, etc. for extraction, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, among the obstacles around the vehicle 12100, the microcomputer 12051 distinguishes between obstacles visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 can determine the collision risk indicating the degree of risk of collision with each obstacle, and when the collision risk is equal to or higher than a set value indicating the possibility of collision, an alarm is output to the driver via the audio speaker 12061 or the display unit 12062, forced deceleration or avoidance steering is performed via the drive system control unit 12010, or driving assistance for collision prevention is provided.

[0409] Examples of a moving body control system to which the technology according to the present disclosure can be applied have been described. The technology according to the present invention can be applied to the distance measurement device 12031 in the above configuration.

[0410] In addition, the present technology may also have the following configuration. (1)

[0412] A light-emitting device, comprising:

[0413] A substrate including a plurality of light-emitting portions; and

[0414] A film disposed on the substrate,

[0415] wherein the substrate includes a groove surface at an end portion on the surface of the substrate. (2)

[0417] The light-emitting device according to (1), wherein the film is a thin film. (3)

[0419] The light-emitting device according to (1) or (2), wherein the film is an antireflection film. (4)

[0421] The light-emitting device according to any one of (1) to (3), wherein the film is disposed on the groove surface. (5)

[0423] The light-emitting device according to any one of (1) to (4), wherein the film is an electrode. (6)

[0425] The light-emitting device according to any one of (1) to (5), wherein the film includes wirings. (7)

[0427] The light-emitting device according to any one of (1) to (6), wherein the film is a Au thin film. (8)

[0429] The light-emitting device according to any one of (1) to (4), wherein the film includes an anode electrode and an insulating film. (9)

[0431] The light-emitting device according to any one of (1) to (8), wherein each light-emitting portion is a vertical cavity surface emitting laser (VCSEL). (10)

[0433] The light-emitting device according to any one of (1) to (9), wherein the light-emitting device is a back-emission type. (11)

[0435] The light-emitting device according to any one of (1) to (10), wherein the plurality of light-emitting portions are two-dimensionally arranged in a staggered manner. (12)

[0437] The light-emitting device according to any one of (1) to (11), wherein the substrate includes a plurality of optical elements, each optical element corresponding to a respective light-emitting portion. (13)

[0439] The light-emitting device according to (12), wherein the optical element is a convex lens. (14)

[0441] The light-emitting device according to any one of (1) to (14), wherein the groove surface is the first surface of the groove in the substrate, and the groove has a symmetrically formed first surface and a second surface. (15)

[0443] The light-emitting device according to (14), wherein the groove is a V-shaped groove, and the V-shaped groove provides the groove surface as a chamfered portion at the end of the surface of the substrate when separated. (16)

[0445] The light-emitting device according to (15), wherein after the separation of the substrate, the second surface of the groove is removed from the light-emitting device. (17)

[0447] The light-emitting device according to (14), wherein the groove surface is a curved surface. (18)

[0449] The light-emitting device according to any one of (1) to (16), wherein the groove surface has an inclination angle of 60° or less with respect to the thickness direction of the substrate. (19)

[0451] A method of manufacturing a light-emitting device, comprising:

[0452] Forming a plurality of light-emitting portions on a first surface of a substrate;

[0453] Forming a plurality of grooves on a second surface of the substrate;

[0454] Forming a film on the second surface;

[0455] Adhering a tape to the second surface;

[0456] Releasing a plurality of light-emitting devices from the tape. (20)

[0458] The method according to any one of (19), wherein the light-emitting device is an optical chip. (21)

[0460] The method according to any one of (20), wherein each optical chip includes a plurality of backside-emitting vertical-cavity surface-emitting lasers. (22)

[0462] The method according to any one of (19) to (21), further comprising forming an optical element on the second surface. (23)

[0464] The method according to any one of (19) to (22), wherein the groove is formed by etching. (24)

[0466] The method according to any one of (19) to (23), wherein the tape includes at least one of a cutting tape and a protective tape. (25)

[0468] An optical device, comprising:

[0469] An element, the element including

[0470] A first element forming part, including a substrate, and

[0471] A second element forming part, disposed on one surface of the substrate, wherein

[0472] The substrate includes a chamfered portion at an end on the other surface side opposite to the one surface side and / or at an end on the one surface side. (26)

[0474] The optical device according to (25), wherein

[0475] When the substrate includes a chamfered portion at an end on the other surface side, the first element forming part is covered from the other surface side by a thin film, and

[0476] When the substrate includes a chamfered portion at an end on the one surface side, the second element forming part is covered from the one surface side by a thin film. (27)

[0478] The optical device according to (25) or (26), wherein

[0479] When the substrate includes a chamfered portion at an end on the other surface side, the other surface and the chamfered portion are covered by a thin film, and

[0480] When the substrate includes a chamfered portion at an end on the one surface side, the one surface and the chamfered portion are covered by a thin film. (28)

[0482] The optical device according to any one of (25) to (27), wherein

[0483] The substrate includes a chamfered portion at an end on the other surface side,

[0484] The first element forming part includes an optical element disposed on the other surface, and

[0485] At least the optical element and the chamfered portion are covered by a thin film. (29)

[0487] The optical device according to any one of (25) to (28), wherein

[0488] The chamfered portion has an inclination angle of 60° or less with respect to the thickness direction of the substrate. (30)

[0490] The optical device according to any one of (25) to (29), wherein

[0491] For the chamfered portion, the ratio of the length in the thickness direction of the substrate to the length in the in-plane direction of the substrate is 2 or more. (31)

[0493] The optical device according to any one of (25) to (30), wherein

[0494] The length of the chamfered portion in the thickness direction of the substrate is one-third or less of the thickness of the substrate. (32)

[0496] The optical device according to any one of (26) to (31), wherein

[0497] The thin film includes an antireflection film. (33)

[0499] The optical device according to any one of (25) to (32), wherein

[0500] The second element forming portion includes a light-emitting layer. (34)

[0502] The optical device according to (33), wherein

[0503] The second element forming portion includes a first reflector and a second reflector, the light-emitting layer is sandwiched between the first reflector and the second reflector, or the first element forming portion includes a first reflector and the second element forming portion includes a second reflector. (35)

[0505] The optical device according to (33) or (34), wherein

[0506] The second element forming portion includes a mesa including a light-emitting layer. (36)

[0508] The optical device according to any one of (25) to (35), wherein

[0509] The substrate includes a semiconductor substrate. (37)

[0511] The optical device according to any one of (25) to (36), wherein

[0512] The optical device further includes another substrate bonded to the element. (38)

[0514] A method of manufacturing an optical device, the method comprising:

[0515] forming a tapered groove in another surface of the wafer at a scribing position of the wafer, the wafer being shared by a plurality of first element forming portions and having a plurality of second element forming portions corresponding to the plurality of first element forming portions provided on one surface of the wafer;

[0516] forming a crack at the scribing position of the wafer from one surface side; and

[0517] dicing the wafer at the scribing position to obtain a plurality of optical chips including the first element forming portions and the second element forming portions. (39)

[0519] The method of manufacturing an optical device according to (38), wherein,

[0520] in the step of forming the crack, the crack is formed by irradiating the scribing position from one surface side with a laser. (40)

[0522] The method of manufacturing an optical device according to (38) or (39), wherein,

[0523] in the step of forming the tapered groove, the wafer is etched from the other surface side to form the tapered groove on the other surface and the optical element. (41)

[0525] The method of manufacturing an optical device according to any one of (38) to (40), comprising:

[0526] forming a thin film on the other surface provided with the tapered groove before the step of forming the crack;

[0527] adhering a dicing tape to the surface of the plurality of optical chips on the thin film side after the step of forming the thin film and before the step of forming the crack; and

[0528] releasing the plurality of optical chips from the dicing tape after the obtaining step. (42)

[0530] The method of manufacturing an optical device according to any one of (38) to (41), comprising:

[0531] after the obtaining step, bonding the second element forming portions of the plurality of optical chips to another wafer via bumps;

[0532] The step of adhering a protective tape to the surfaces of a plurality of optical chips opposite to the other wafer side;

[0533] The step of grinding and thinning the other wafer; and

[0534] The step of releasing the protective tape from the plurality of optical chips. (43)

[0536] The method for manufacturing an optical device according to (42), comprising:

[0537] After the step of releasing the protective tape, the step of cutting the other wafer to obtain a plurality of optical devices each including a corresponding one of the plurality of optical chips. (44)

[0539] The method for manufacturing an optical device according to (42), comprising:

[0540] After the bonding step, the step of filling the periphery of the bonding portion between the second element forming portions of the plurality of optical chips and the other wafer with underfill. (45)

[0542] A method for manufacturing an optical device, the method comprising:

[0543] The step of forming a tapered groove on one surface of a wafer at a dicing position, the wafer being shared by a plurality of first element forming portions and having a plurality of second element forming portions corresponding to the plurality of first element forming portions provided on one surface of the wafer;

[0544] The step of forming a crack at the dicing position of the wafer from the other surface side; and

[0545] The step of dicing the wafer at the dicing position to obtain optical chips each including a first element forming portion and a second element forming portion. (46)

[0547] The method for manufacturing an optical device according to (45), wherein

[0548] In the step of forming the crack, the crack is formed by irradiating the dicing position with a laser from the other surface side. (47)

[0550] The method for manufacturing an optical device according to (45) or (46), the method comprising:

[0551] Before the step of forming the crack, the step of forming a thin film on the one surface provided with the tapered groove;

[0552] After the step of forming the thin film and before the step of forming the crack, the step of adhering a dicing tape to the surfaces of the plurality of optical chips on the thin film side;

[0553] The step of releasing a plurality of optical chips from a dicing tape after the obtaining step. (48)

[0555] A method of manufacturing an optical device according to any one of (45) to (47), the method comprising:

[0556] After the obtaining step, the step of bonding a plurality of optical chips to another wafer;

[0557] The step of adhering a protective tape to a surface of the plurality of optical chips opposite to the other wafer side, grinding and thinning the other wafer; and

[0558] The step of releasing the protective tape from the plurality of optical chips. (49)

[0560] A method of manufacturing an optical device according to (48), the method comprising:

[0561] The step of dicing the other wafer to obtain a plurality of optical devices each including a corresponding one of the plurality of optical chips. (50)

[0563] A method of manufacturing an optical device according to (48) or (49), the method comprising:

[0564] After the bonding step, the step of filling the periphery of the bonding portion between the second element constituting portion of the plurality of optical chips and the other wafer with underfill.

[0565] (B1)

[0566] An optical device, comprising:

[0567] An element, the element comprising

[0568] A first element constituting portion, including a substrate, and

[0569] A second element constituting portion, disposed on one surface of the substrate, wherein,

[0570] The substrate includes a chamfered portion at an end portion on the other surface side opposite to the one surface side and / or at an end portion on the one surface side.

[0571] (B2)

[0572] The optical device according to (B1), wherein,

[0573] When the substrate includes a chamfered portion at an end portion on the other surface side, the first element constituting portion is covered from the other surface side by a thin film, and

[0574] When the substrate includes a chamfered portion at the end on one surface side, the second element forming portion is covered with a thin film from the one surface side.

[0575] (B3)

[0576] The optical device according to (B1) or (B2), wherein,

[0577] When the substrate includes a chamfered portion at the end on the other surface side, the other surface and the chamfered portion are covered with a thin film, and,

[0578] When the substrate includes a chamfered portion at the end on one surface side, the one surface and the chamfered portion are covered with a thin film.

[0579] (B4)

[0580] The optical device according to any one of (B1) to (B3), wherein,

[0581] The substrate includes a chamfered portion at the end on the other surface side,

[0582] The first element forming portion includes an optical element provided on the other surface, and

[0583] At least the optical element and the chamfered portion are covered with a thin film.

[0584] (B5)

[0585] The optical device according to any one of (B1) to (B4), wherein,

[0586] The chamfered portion has an inclination angle of 60° or less with respect to the thickness direction of the substrate.

[0587] (B6)

[0588] The optical device according to any one of (B1) to (B5), wherein,

[0589] For the chamfered portion, the ratio of the length in the thickness direction of the substrate to the length in the in-plane direction of the substrate is 2 or more.

[0590] (B7)

[0591] The optical device according to any one of (B1) to (B6), wherein,

[0592] The length of the chamfered portion in the thickness direction of the substrate is one-third or less of the thickness of the substrate.

[0593] (B8)

[0594] The optical device according to any one of (B2) to (B7), wherein,

[0595] The thin film includes an antireflection film.

[0596] (B9)

[0597] An optical device according to any one of (B1) to (B8), wherein

[0598] The second element forming part includes a light emitting layer.

[0599] (B10)

[0600] An optical device according to (B9), wherein

[0601] The second element forming part includes a first reflector and a second reflector, the light emitting layer is sandwiched between the first reflector and the second reflector, or the first element forming part includes a first reflector and the second element forming part includes a second reflector.

[0602] (B11)

[0603] An optical device according to (B9) or (B10), wherein

[0604] The second element forming part includes a mesa including a light emitting layer.

[0605] (B12)

[0606] An optical device according to any one of (B1) to (B11), wherein

[0607] The substrate includes a semiconductor substrate.

[0608] (B13)

[0609] An optical device according to any one of (B1) to (B12), wherein

[0610] The optical device further includes another substrate bonded to the element.

[0611] (B14)

[0612] A method of manufacturing an optical device, the method comprising:

[0613] Forming a tapered groove in the other surface of the wafer at the scribing position of the wafer, the wafer being shared by a plurality of first element forming parts and having a plurality of second element forming parts corresponding to the plurality of first element forming parts provided on one surface of the wafer;

[0614] Forming a crack at the scribing position of the wafer from one surface side; and

[0615] Dividing the wafer at the scribing position to obtain a plurality of optical chips including the first element forming part and the second element forming part.

[0616] (B15)

[0617] A method of manufacturing an optical device according to (B14), wherein,

[0618] In the step of forming a crack, the crack is formed by irradiating the scribing position from one surface side with a laser.

[0619] (B16)

[0620] A method of manufacturing an optical device according to (B14) or (B15), wherein,

[0621] In the step of forming a tapered groove, the wafer is etched from the other surface side to form a tapered groove on the other surface and an optical element.

[0622] (B17)

[0623] A method of manufacturing an optical device according to any one of (B14) to (B16), comprising:

[0624] A step of forming a thin film on the other surface provided with a tapered groove before the step of forming a crack;

[0625] A step of adhering a cutting tape to the surface of a plurality of optical chips on the thin film side after the step of forming the thin film and before the step of forming a crack; and

[0626] A step of releasing a plurality of optical chips from the cutting tape after the obtaining step.

[0627] (B18)

[0628] A method of manufacturing an optical device according to any one of (B14) to (B17), comprising:

[0629] A step of bonding the second element forming portion of a plurality of optical chips to another wafer via bumps after the obtaining step;

[0630] A step of adhering a protective tape to the surface of a plurality of optical chips opposite to the other wafer side;

[0631] A step of grinding and thinning the other wafer; and

[0632] A step of releasing the protective tape from a plurality of optical chips.

[0633] (B19)

[0634] A method of manufacturing an optical device according to (B18), comprising:

[0635] A step of cutting the other wafer after the step of releasing the protective tape to obtain a plurality of optical devices each including a corresponding one of a plurality of optical chips.

[0636] (B20)

[0637] A method of manufacturing an optical device according to (B18), comprising:

[0638] After the bonding step, a step of filling the periphery of the bonding portion between the second element forming portions of the plurality of optical chips and another wafer with underfill.

[0639] (B21)

[0640] A method of manufacturing an optical device, the method comprising:

[0641] A step of forming a tapered groove on one surface of a wafer at a dicing position, the wafer being shared by a plurality of first element forming portions and having a plurality of second element forming portions corresponding to the plurality of first element forming portions provided on one surface of the wafer;

[0642] A step of forming a crack at the dicing position of the wafer from the other surface side; and

[0643] A step of dicing the wafer at the dicing position to obtain optical chips each including a first element forming portion and a second element forming portion.

[0644] (B22)

[0645] A method of manufacturing an optical device according to (B21), wherein

[0646] In the step of forming the crack, the crack is formed by irradiating the dicing position with a laser from the other surface side.

[0647] (B23)

[0648] A method of manufacturing an optical device according to (B21) or (B22), the method comprising:

[0649] A step of forming a thin film on the one surface provided with the tapered groove before the step of forming the crack;

[0650] A step of adhering a dicing tape to the surface of the plurality of optical chips on the thin film side after the step of forming the thin film and before the step of forming the crack; and

[0651] A step of releasing the plurality of optical chips from the dicing tape after the obtaining step.

[0652] (B24)

[0653] A method of manufacturing an optical device according to any one of (B21) to (B23), the method comprising:

[0654] A step of bonding the plurality of optical chips to another wafer after the obtaining step;

[0655] The step of adhering a protective tape to the surface of a plurality of optical chips opposite to the other wafer side, grinding and thinning the other wafer; and

[0656] The step of releasing the protective tape from the plurality of optical chips.

[0657] (B25)

[0658] A method for manufacturing an optical device according to (B24), the method comprising:

[0659] The step of cutting the other wafer to obtain a plurality of optical devices each including a corresponding one of the plurality of optical chips.

[0660] (B26)

[0661] A method for manufacturing an optical device according to (B24) or (B25), the method comprising:

[0662] After the bonding step, the step of filling the periphery of the bonding portion between the second element formation portion of the plurality of optical chips and the other wafer with underfill.

[0663] [List of reference numerals]

[0664] 10-1 to 10-11, 20-1 to 20-4, 10-M1 to 10-M12: Optical device

[0665] 100: Substrate

[0666] 100a: Optical element

[0667] 100b: Chamfered portion

[0668] 100W: Wafer

[0669] 101: Thin film

[0670] 201: First reflector

[0671] 203: Light-emitting layer

[0672] 206: Second reflector

[0673] 300: Another substrate

[0674] 300W: Another wafer

[0675] 400: Bump

[0676] 500: Underfill

[0677] ES1: First element formation portion

[0678] ES2: Second element formation portion

[0679] T: Thickness of the substrate

[0680] Φ: Tilt angle

[0681] Dv: Length of the chamfered portion in the thickness direction of the substrate

[0682] Dh: Length of the chamfered portion in the in-plane direction of the substrate

[0683] VT: Tapered groove

[0684] C: Crack

[0685] DT: Cutting tape

[0686] OC: Optical chip

[0687] PT: Protection tape.

Claims

1. A light-emitting device, comprising: a substrate including a plurality of light-emitting portions; and a film provided on the substrate, wherein the substrate includes a groove surface at an end portion on the surface of the substrate.

2. The light-emitting device according to claim 1, wherein, The film is a thin film.

3. The light-emitting device according to claim 1, wherein, The film is an antireflection film.

4. The light-emitting device according to claim 1, wherein, The film is provided on the groove surface.

5. The light-emitting device according to claim 1, wherein, The film is an electrode.

6. The light-emitting device according to claim 1, wherein, The film includes wirings.

7. The light-emitting device according to claim 1, wherein, The film is an Au thin film.

8. The light-emitting device according to claim 1, wherein The film includes an anode electrode and an insulating film.

9. The light-emitting device according to claim 1, wherein, Each light-emitting portion is a vertical-cavity surface-emitting laser (VCSEL).

10. The light-emitting device according to claim 1, wherein, The light-emitting device is a back-emission type.

11. The light-emitting device according to claim 1, wherein, The plurality of light-emitting portions are two-dimensionally arranged in a staggered manner.

12. The light-emitting device according to claim 1, wherein, The substrate includes a plurality of optical elements, each optical element corresponding to a respective light-emitting portion.

13. The light-emitting device according to claim 12, wherein, The optical element is a convex lens.

14. The light-emitting device according to claim 1, wherein, The groove surface is a first surface of a groove in the substrate, the groove having the symmetrically shaped first surface and a second surface.

15. The light-emitting device according to claim 14, wherein, The groove is a V-shaped groove, the V-shaped groove providing the groove surface as a chamfered portion at an end portion on the surface of the substrate when separated.

16. The light-emitting device according to claim 15, wherein, After separation of the substrate, the second surface of the groove is removed from the light-emitting device.

17. The light-emitting device according to claim 14, wherein, The groove surface is a curved surface.

18. The light-emitting device according to claim 1, wherein, The groove surface has an inclination angle of 60° or less with respect to the thickness direction of the substrate.

19. A method of manufacturing a light-emitting device, comprising: forming a plurality of light-emitting portions on a first surface of a substrate; forming a plurality of grooves on a second surface of the substrate; forming a film on the second surface; adhering a tape to the second surface; releasing a plurality of light-emitting devices from the tape.

20. The method according to claim 19, wherein, The light-emitting device is an optical chip.

21. The method according to claim 20, wherein, Each of the optical chips includes a plurality of back-emission vertical-cavity surface-emitting lasers.

22. The method according to claim 19, further comprising forming an optical element on the second surface.

23. The method according to claim 19, wherein The groove is formed by etching.

24. The method according to claim 19, wherein, The tape includes at least one of a cutting tape and a protective tape.

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