Wafer automatic scrubbing method and device, electronic equipment and computer storage medium

Abstract

The invention discloses an automatic wafer scrubbing method and device, electronic equipment and a computer storage medium. The automatic wafer scrubbing method comprises the steps that equipment parameters of the wafer scrubbing device and first control parameters used for scrubbing a wafer are obtained; according to the equipment parameters of the wafer scrubbing device and the first control parameter, determining the scrubbing times of each area of the wafer in the corresponding repetition period when the wafer scrubbing device is controlled to scrub the wafer according to the first control parameter; if the number of times of scrubbing each area of the wafer in the corresponding repetition period meets a parameter updating condition, updating the first control parameter to obtain a second control parameter, and controlling the wafer scrubbing device to scrub the wafer according to the second control parameter. The number of times of scrubbing each region of the wafer in the corresponding repetition period does not meet the parameter updating condition. According to the invention, the effect that the wafer is brushed can be ensured.

Description

[0001] This application claims priority to an application filed on October 31, 2024, with application number "2024115382731" and invention title "Wafer Cleaning Method, Device, Electronic Equipment and Computer Storage Medium". The disclosure of the above application is hereby incorporated by reference in its entirety. Technical Field

[0002] This application relates to the field of semiconductor processing technologies, and in particular, to an automatic wafer brushing method, device, electronic equipment and computer storage medium. Background Art

[0003] In the vertical or horizontal brushing module of the post-cleaning unit of a Chemical Mechanical Polishing (CMP) device, a brushing material is usually coated on the surface of a roller brush to brush the surface of a wafer. The surface of the brushing material has periodically arranged brushing surfaces. During brushing, the wafer is brushed by contacting and rubbing the wafer with the brushing surfaces.

[0004] However, due to the periodically arranged characteristics of the brushing surfaces, when certain specific proportional relationships are formed between the rotational speed of the roller brush and the rotational speed of the wafer, there will be some positions on the wafer that cannot be brushed by the brushing surfaces all the time, or the distribution of the number of times the different positions on the wafer are brushed by the brushing surfaces is significantly uneven, resulting in the failure to fully brush off the contaminants on the wafer surface. Summary of the Invention

[0005] In view of this, this application provides an automatic wafer brushing method, device, electronic equipment and computer storage medium to at least partially solve the above technical problems.

[0006] The first aspect of this application provides an automatic wafer brushing method, including: obtaining the equipment parameters of a wafer brushing device and first control parameters for brushing the wafer; determining, according to the equipment parameters and the first control parameters, the number of times each area of the wafer is brushed within the corresponding repetition period when the wafer brushing device brushes the wafer according to the first control parameters, where the repetition period is used to indicate the period during which the wafer brushing device brushes the corresponding area on the wafer when brushing the wafer; if the number of times each area of the wafer is brushed within the corresponding repetition period meets the parameter update condition, updating the first control parameters to obtain second control parameters, so that when the wafer brushing device brushes the wafer according to the second control parameters, the number of times each area of the wafer is brushed within the corresponding repetition period does not meet the parameter update condition.

[0007] Optionally, the device parameters include: the length of the brushing surface of the wafer brushing device and the length of the roller brush repeating unit, wherein the brushing surfaces on the wafer brushing device are arranged periodically, and the length of the roller brush repeating unit is the sum of the length of the brushing surface and the shortest distance between adjacent brushing surfaces in the rotation direction of the wafer brushing device; the first control parameter includes: the wafer rotation speed of the wafer and the roller brush rotation speed of the wafer brushing device when brushing the wafer.

[0008] Optionally, when determining the number of times each position on the wafer is brushed within the repetition period when the wafer brushing device brushes the wafer according to the device parameters and the first control parameter, the process may further include: respectively determining, according to the device parameters, the wafer repeating units corresponding to the roller brush repeating unit on the circumferences of the wafer for each circumference of the wafer;

[0009] According to the first control parameter, determine the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit, and use the number of times the brushing surface passes through each position as the number of brushing times at that position, to obtain the number of times each position on the wafer is brushed within the repetition period.

[0010] Optionally, when determining the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit according to the first control parameter, and using the number of times the brushing surface passes through each position as the number of brushing times at that position, to obtain the number of times each position on the wafer is brushed within the repetition period, the process may further include: when the number of times the brushing surface of the roller brush repeating unit passes through each position of the wafer repeating unit is not an integer, re-determine the position of the wafer repeating unit relative to the roller brush repeating unit according to the decimal part of the number of passes; obtain the number of times the brushing surface passes through each position when the position of the roller brush repeating unit is aligned with the starting position of the roller brush repeating unit for the second time as the number of brushing times at that position, to obtain the number of times each position on the wafer is brushed within the repetition period.

[0011] Optionally, the parameter update condition includes: there are positions on the wafer where the number of brushing times within the repetition period is 0.

[0012] Optionally, when updating the first control parameter to obtain the second control parameter, the process may further include: adjusting the wafer rotation speed according to the rotation speed of the wafer when the number of brushing times within the repetition period is not 0 to obtain a third rotation speed; and / or, adjusting the roller brush rotation speed according to the rotation speed of the wafer brushing device when the number of brushing times within the repetition period is not 0 to obtain a fourth rotation speed.

[0013] Optionally, the process of updating the first control parameter to obtain a second control parameter may further include: adjusting the rotation speed of the wafer and the rotation speed of the roller brush according to the proportional relationship between the rotation speed of the wafer and the rotation speed of the wafer scrubbing device when the number of scrubbing times within the repetition period is not zero, so that at least the number of scrubbing times within the repetition period is not zero.

[0014] Optionally, the parameter update condition includes: the difference in the number of scrubbing times between the position on the wafer with the most scrubbing times within the repetition period and the position on the wafer with the least scrubbing times within the repetition period is greater than a preset quantity threshold.

[0015] Optionally, the process of updating the first control parameter to obtain a second control parameter may further include: determining a plurality of simulated control parameters according to the equipment parameters, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer, where each simulated control parameter includes at least one of the rotation speed of the wafer scrubbing device and the rotation speed of the wafer, which is different from the other simulated control parameters in the plurality of simulated control parameters; calculating the number of scrubbing times of each area of the wafer within the corresponding repetition period under the control of the plurality of simulated control parameters to obtain a plurality of simulated scrubbing results; respectively calculating the variance of the number of scrubbing times of each area of the wafer corresponding to the plurality of simulated scrubbing results within the corresponding repetition period; and updating the first control parameter according to the simulated control parameter corresponding to the simulated scrubbing result with the smallest variance of the number of scrubbing times and where the number of scrubbing times of each area of the wafer within the corresponding repetition period is not zero, to obtain a second control parameter.

[0016] Optionally, the process of determining a plurality of simulated control parameters according to the equipment parameters, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer may further include: creating rotational noise according to the rotation speed range of the wafer scrubbing device and the rotation speed range of the wafer; and determining a plurality of simulated control parameters according to the rotational noise, the equipment parameters, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer.

[0017] Optionally, the automatic wafer scrubbing process may further include: when the scrubbed surface of the wafer is perpendicular to the horizontal plane, if the second control parameter indicates that the speed of controlling the rotation of the wafer scrubbing device is less than the speed of controlling the rotation of the outer edge of the wafer, or the speed of controlling the rotation of the wafer is greater than a first speed threshold, a speed reduction prompt is issued; when the scrubbed surface of the wafer is parallel to the horizontal plane, if the second control parameter indicates that the speed of controlling the rotation of the wafer scrubbing device is less than the speed of controlling the rotation of the outer edge of the wafer, or the speed of controlling the rotation of the wafer is greater than a second speed threshold, a speed reduction prompt is issued.

[0018] The second aspect of the present application provides a wafer automatic brushing device, including: an acquisition module for acquiring device parameters of the wafer brushing device and first control parameters for brushing the wafer; a determination module for determining, according to the device parameters and the first control parameters, the number of times each position of the wafer is brushed within a repetition period when the wafer brushing device brushes the wafer, where the repetition period is used to indicate the minimum repetition period for the wafer brushing device to brush the wafer when brushing the wafer; an adjustment module for updating the first control parameters to obtain second control parameters if the number of times each area of the wafer is brushed within the corresponding repetition period meets the parameter update condition, so that when the wafer brushing device brushes the wafer according to the second control parameters, the number of times each area of the wafer is brushed within the corresponding repetition period does not meet the parameter update condition.

[0019] The third aspect of the present application provides an electronic device, including: a processor, a communication interface, a memory, and a communication bus. The processor, the memory, and the communication interface complete mutual communication through the communication bus; the memory is used to store at least one executable instruction, and the executable instruction causes the processor to perform the operations corresponding to the method described in the first aspect of the embodiment.

[0020] The fourth aspect of the present application provides a computer storage medium, on which a computer program is stored, and when the program is executed by a processor, it implements the method described in the first aspect of the embodiment.

[0021] The fifth aspect of the present application provides a computer program product, including computer instructions, and the computer instructions direct a computing device to perform the operations corresponding to the method described in the first aspect of the embodiment.

[0022] In the present application, by analyzing the situation of the wafer being brushed within the repetition period, it is judged whether the first control parameters for brushing the wafer can brush the wafer sufficiently, and a relatively accurate result can be obtained, thereby ensuring that the wafer can be brushed sufficiently. Description of the Drawings

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application, and those of ordinary skill in the art can also obtain other drawings based on these drawings.

[0024] Figure 1 is a step flow chart of the wafer automatic brushing method according to an embodiment of the present application;

[0025] Figure 2 is a schematic diagram of a wafer brushing scenario applicable to the embodiments of the present application;

[0026] Figure 3 It is a schematic diagram of a roller brush repeating unit according to an embodiment of the present application;

[0027] Figure 4 It is a schematic diagram of a wafer being scrubbed according to an embodiment of the present application;

[0028] Figure 5 It is a schematic diagram of a wafer scrubbing device applicable to an embodiment of the present application;

[0029] Figure 6 It is a schematic diagram of a scrubbing repeating cycle included in a repeating cycle according to an embodiment of the present application;

[0030] Figure 7 It is a schematic diagram of the variance of the number of scrubbing times of each area of a wafer within the scrubbing repeating cycle included in the corresponding repeating cycle according to an embodiment of the present application;

[0031] Figure 8 It is a schematic diagram of the simulated scrubbing result according to an embodiment of the present application;

[0032] Figure 9 It is a flowchart of the steps of a method for generating a wafer scrubbing scheme according to an embodiment of the present application;

[0033] Figure 10 It is a flowchart of the steps of a method for generating a wafer scrubbing scheme according to another embodiment of the present application;

[0034] Figure 11 It is a scrubbing effect diagram corresponding to the position of the scrubbing cycle shown in the present application;

[0035] Figure 12 It is a flowchart of the steps of a method for generating a wafer scrubbing scheme according to still another embodiment of the present application;

[0036] Figure 13 It is a schematic diagram of a wafer automatic scrubbing device according to an embodiment of the present application;

[0037] Figure 14 It is a schematic diagram of an electronic device according to an embodiment of the present application. Detailed implementation manners

[0038] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art shall fall within the scope protected by the embodiments of the present application.

[0039] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit the application. The singular forms "a", "the", and "said" used in this application and the appended claims are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0040] It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "when" or "while" or "in response to determining".

[0041] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments in this application without creative efforts belong to the scope of protection of this application. Without conflict, the following various embodiments and their technical features can be combined with each other.

[0042] Figure 1 Schematic diagram of a wafer automatic brushing method according to an embodiment of the present application. As Figure 1 shown, the wafer automatic brushing method includes the following steps:

[0043] Step 101, obtain the equipment parameters of the wafer brushing device and the first control parameters for brushing the wafer.

[0044] Step 102, determine the number of times each area of the wafer is brushed within the corresponding repetition period when controlling the wafer brushing device to brush the wafer according to the first control parameter according to the equipment parameters and the first control parameter.

[0045] Step 103, if the number of times each area of the wafer is brushed within the corresponding repetition period meets the parameter update condition, update the first control parameter to obtain the second control parameter.

[0046] During the semiconductor processing, mainly through automated production, during the process of brushing the wafer, generally, relevant equipment is controlled by controlling parameters to perform the brushing. In order to fully brush the wafer, first, obtain the equipment parameters of the wafer brushing device that is about to brush the wafer and the first control parameter for brushing the wafer under the current state. The equipment parameters of the wafer brushing device include the physical parameters related to the wafer brushing device itself. When no parameter control is performed, the first control parameter will be used for brushing during the brushing process. At this time, it is necessary to verify whether the relevant equipment can fully brush the wafer under the control of the first control parameter. Therefore, according to the equipment parameters and the first control parameter of the wafer brushing device, determine the number of times each area of the wafer is brushed within the corresponding repetition period when the wafer brushing device is controlled by the first control parameter to brush the wafer. The repetition period is used to indicate the brushing repetition period when the wafer brushing device brushes the corresponding area on the wafer, the rotation repetition period of the wafer when the wafer is brushed, and the rotation repetition period of the roller brush when the wafer is brushed. If the number of times each area of the wafer is brushed within the corresponding repetition period meets the parameter update condition, then update the first control parameter to obtain the second control parameter, so that when the wafer brushing device is controlled by the second control parameter to brush the wafer, the number of times each area of the wafer is brushed within the corresponding repetition period does not meet the parameter update condition. The parameter update condition is used to characterize that the brushing effect brought by the number of times each area of the wafer is brushed within the corresponding repetition period does not meet the expectation.

[0047] In the embodiment of the present application, by analyzing the situation of the wafer being brushed within the repetition period, it is judged whether the first control parameter for brushing the wafer can fully brush the wafer, and a relatively accurate result can be obtained, thereby ensuring that the wafer can be fully brushed.

[0048] Specifically, the parameter update condition may include: there is a position in the wafer where the number of brushing times is 0 within the repetition period.

[0049] For example, as Figure 2 and Figure 3 shown, Figure 2Multiple repeated circumferences 21 are marked by colors below. Taking a certain circumference 21 on the wafer 2 as an example, the circumference 13 in the rotary brush 1 of the wafer scrubbing device is used to scrub this circumference 21. During the scrubbing process, the wafer 2 rotates at a fixed speed included in the first control parameter, and the rotary brush 1 of the wafer scrubbing device also rotates at another fixed speed included in the first control parameter. The multiple brush surfaces 12 provided on the surface of the rotary brush 1 of the wafer scrubbing device will repeatedly scrub the positions on the wafer 2 in multiple repeated cycles. Therefore, according to the situation within one repeated cycle, the situation of scrubbing the wafer 2 with the first control parameter can be deduced. If there are positions with the number of scrubbing times being 0 within the repeated cycle, the first control parameter is updated to obtain the second control parameter.

[0050] It should be noted that Figure 2 The figure shows the rotation periods of the rotary brushes 1 of 3 wafer scrubbing devices.

[0051] In the embodiment of the present application, by analyzing the situation of the wafer being scrubbed within the repeated cycle, it is judged whether the first control parameter for scrubbing the wafer can sufficiently scrub the wafer, and a relatively accurate result can be obtained. Moreover, when there are positions with the number of scrubbing times being 0 in the wafer within the repeated cycle, by updating the first control parameter to obtain the second control parameter, when the wafer scrubbing device is controlled to scrub the wafer according to the second control parameter, there are no positions with the number of scrubbing times being 0 in the wafer per unit time, which can ensure the scrubbing effect of the wafer.

[0052] It should be noted that if the difference in the number of scrubbing times between the scrubbed positions on the wafer within the repeated cycle is too large, it will also lead to an unsatisfactory scrubbing effect of the wafer. Therefore, the parameter update condition can also include: the difference in the number of scrubbing times between the position with the most scrubbing times in the wafer within the repeated cycle and the position with the least scrubbing times in the wafer within the repeated cycle is greater than a preset quantity threshold, that is, if the difference in the number of scrubbing times between the position with the most scrubbing times in the wafer within the repeated cycle and the position with the least scrubbing times in the wafer within the repeated cycle is greater than the preset quantity threshold, then the first control parameter is updated to obtain the third control parameter. When the wafer is scrubbed according to the third control parameter, the difference in the number of scrubbing times of the positions in the wafer within the repeated cycle is less than or equal to the quantity threshold, further ensuring the scrubbing effect of the wafer.

[0053] Specifically, the parameters of the wafer scrubbing device include: the length of the scrubbing surface 12 of the rotary brush 1 of the wafer scrubbing device and the length of the rotary brush repeating unit 11. Among them, the scrubbing surfaces 12 on the rotary brush 1 of the wafer scrubbing device are arranged periodically, and the length of the rotary brush repeating unit 11 is the sum of the length of the scrubbing surface 12 and the shortest distance between adjacent scrubbing surfaces 12 in the rotation direction of the rotary brush 1 of the wafer scrubbing device. The first control parameter includes: the wafer rotation speed of the wafer 2 during wafer scrubbing and the rotary brush rotation speed of the wafer scrubbing device.

[0054] The rotary brush 1 of the wafer scrubbing device can be as Figure 3 shown, with a plurality of scrubbing surfaces 12 provided on its surface. The plurality of scrubbing surfaces 12 are arranged periodically, and the spacing between the scrubbing surfaces 12 on the same circumference is the same.

[0055] Specifically, the process of determining the number of times each position on the wafer is scrubbed within the repetition period when the wafer scrubbing device scrubs the wafer according to the device parameters and the first control parameter may further include:

[0056] According to the device parameters, for each circumference on the wafer, the wafer repeating unit corresponding to the rotary brush repeating unit on the circumference of the wafer is determined respectively. According to the first control parameter, the number of passes of the scrubbing surface of the rotary brush repeating unit through each position of the wafer repeating unit is determined, and the number of times each position is passed by the scrubbing surface is used as the number of scrubbing times at that position, so as to obtain the number of times each position on the wafer is scrubbed within the repetition period.

[0057] As Figure 2 shown, when the rotary brush 1 of the wafer scrubbing device contacts the wafer 2, the position on the wafer 2 corresponding to the rotary brush repeating unit 11 is the wafer repeating unit 22. According to the wafer rotation speed and the rotary brush rotation speed included in the first control parameter, the periodic number of passes of the scrubbing surface 12 through the wafer repeating unit 22 within the first rotation period of the rotary brush 1 of the wafer scrubbing device can be determined. Furthermore, according to the periodic number of passes, the wafer rotation speed and the rotary brush rotation speed, the number of scrubbing repetitions of the wafer repeating unit 22 scrubbed by the rotary brush repeating unit 11 within the second rotation period of the wafer 2 can be determined. Thus, the number of times each position on the wafer 2 is scrubbed within the repetition period can be inferred. The schematic diagram of the wafer 2 being scrubbed can be as Figure 4 、 Figure 5 shown. When each rotary brush repeating unit 11 rotates one week (Loop), it will scrub the corresponding position on the wafer repeating unit 22.

[0058] It should be noted that the calculated number of cycle passes may not be an integer. When the number of cycle passes is not an integer, after the rotary brush 1 of the wafer scrubbing device rotates one week, it is necessary to re-determine the position of the wafer repeating unit 22 relative to the rotary brush repeating unit 11 according to the decimal part of the number of cycle passes. When the starting position of the wafer repeating unit 22 is aligned with the starting position of the rotary brush repeating unit 11 for the second time, it is regarded as a scrubbing repeating cycle included in a repeating cycle.

[0059] Specifically, the process of updating the first control parameter to obtain the second control parameter may further include: adjusting the wafer rotation speed according to the wafer rotation speed when the scrubbing times in the repeating cycle are all non-zero to obtain a third rotation speed, and / or adjusting the rotary brush rotation speed according to the rotation speed of the wafer scrubbing device when the scrubbing times in the repeating cycle are all non-zero to obtain a fourth rotation speed.

[0060] After analyzing the process of the wafer scrubbing device scrubbing the wafer according to the first control parameter, if there is a position on the wafer where the scrubbing times are 0 in the repeating cycle, the specific values of the wafer rotation speed and the rotation speed of the wafer scrubbing device when the scrubbing times in the repeating cycle are all non-zero can be obtained through analysis. Then, the first control parameter can be updated through the specific values, so that the wafer can be scrubbed more precisely through the updated second control parameter.

[0061] In addition, the process of updating the first control parameter to obtain the second control parameter may further include: adjusting the wafer rotation speed and the rotary brush rotation speed according to the proportional relationship between the wafer rotation speed and the rotation speed of the wafer scrubbing device when the scrubbing times in the periodic scrubbing times are all non-zero, so that at least the scrubbing times in the periodic scrubbing times are all non-zero.

[0062] After analyzing the process of the wafer scrubbing device scrubbing the wafer according to the first control parameter, if there is a position on the wafer where the scrubbing times are 0 in the repeating cycle, the proportional relationship between the wafer rotation speed and the rotation speed of the wafer scrubbing device when the scrubbing times in the repeating cycle are all non-zero can be obtained through analysis. For example, when the ratio of the wafer rotation speed to the rotation speed of the wafer scrubbing device is 1:4.3, the scrubbing times in the repeating cycle are all non-zero. Then, the wafer rotation speed can be adjusted to 1 rpm and the rotary brush rotation speed can be adjusted to 2 rpm. Updating the first control parameter according to the proportional relationship between the wafer rotation speed and the rotation speed of the wafer scrubbing device has higher flexibility.

[0063] Figure 6 It is a schematic diagram of the arrangement of the scrubbing surfaces of the rotary brush in an embodiment of the present application. Figure 6Three brushing cycle positions are shown, namely positions 3, 4, and 5. Position 3 is the center position of the brushing surface, position 4 is the tangent position of the brushing surface in the rotation direction, and position 5 is the position of the shortest distance between adjacent brushing surfaces in the rotation direction of the wafer brushing device. The distances of the roller brush repeating units corresponding to position 3 and position 4 are the same, but the length of the brushing surface at position 4 is less than that at position 3, and the length of the roller brush repeating unit corresponding to position 5 is the shortest. It can be seen that during the brushing of the wafer 2, in the case where the circumference of the wafer 2 passes through the brushing surface 12 on the roller brush 1 of the wafer brushing device, the case where the brushing surface 12 is passed through the least is the circumference in the interval from position 3 to position 4, and the case where the brushing surface 12 is passed through the most is the circumference in the interval from position 4 to position 5. Among them, the brushing surface 12 is tangent to the adjacent two brushing surfaces passed through at position 4. After passing through position 4, the number of times the circumference passes through the brushing surface 12 increases. The length of the roller brush repeating unit corresponding to position 5 is the shortest in the case where the brushing surface 12 is passed through the most. Therefore, by analyzing positions 3, 4, and 5, the wafer brushing situation is obtained as the threshold for all circumferences in the entire wafer 2.

[0064] In a possible implementation manner, the process of updating the first control parameter to obtain the second control parameter may further include:

[0065] According to the device parameters, the rotation speed range of the wafer brushing device, and the rotation speed range of the wafer, determine a plurality of simulated control parameters, calculate the number of times each area of the wafer is brushed within the corresponding repetition period under the control of the plurality of simulated control parameters, obtain a plurality of simulated brushing results, respectively calculate the variance of the number of brushing times of each area of the wafer corresponding to the plurality of simulated brushing results within the corresponding repetition period, and update the first control parameter according to the simulated control parameter corresponding to the simulated brushing result with the smallest variance of the number of brushing times and the number of brushing times of each area of the wafer within the corresponding repetition period not being zero, to obtain the second control parameter.

[0066] To determine the second control parameter for controlling the wafer scrubbing device and the wafer rotation speed, it is first necessary to clarify the device parameters of the wafer scrubbing device, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer. The device parameters of the wafer scrubbing device include the number of protrusions passed by the surface of the wafer scrubbing device rotating one week along the scrubbing direction. Then, multiple rotation speeds of the wafer scrubbing device and multiple rotation speeds of the wafer are selected within the rotation speed range of the wafer scrubbing device and the rotation speed range of the wafer, so as to obtain multiple simulated control parameters. After obtaining multiple simulated control parameters, the wafer is respectively scrubbed according to each simulated control parameter. Then, during the simulated scrubbing process, the number of times each area of the wafer is scrubbed within the corresponding repetition period is obtained to obtain multiple simulated scrubbing results. Specifically, the number of times each area of the wafer is scrubbed within the corresponding repetition period can be normalized. The maximum number of times each area of the wafer is scrubbed within the corresponding repetition period is taken as 1, and the other times except the maximum number of times each area of the wafer is scrubbed within the corresponding repetition period are divided by the maximum number of times to obtain the normalized result as the simulated scrubbing result. Then, the variance of the number of scrubbing times of each area of the wafer corresponding to multiple simulated scrubbing results within the corresponding repetition period is calculated respectively. The variance of the number of scrubbing times of each area of the wafer within the scrubbing repetition period included in the corresponding repetition period can be as Figure 7 shown. Then, according to the simulated control parameter corresponding to the simulated scrubbing result with the smallest variance of the number of scrubbing times and the number of scrubbing times of each area of the wafer within the corresponding repetition period not being 0, the first control parameter is updated to obtain the second control parameter. The simulated scrubbing result can be as Figure 8 shown. Through Figure 8 it can be seen the relationship between the uniformity of wafer scrubbing and the rotation speed of the wafer scrubbing device and the rotation speed of the wafer. The higher the gray value, the better the uniformity of scrubbing. When determining the rotation speed of the wafer scrubbing device and the rotation speed of the wafer, the uniformity of scrubbing can also be referred to.

[0067] Specifically, when calculating multiple simulated scrubbing results according to multiple simulated control parameters, the different scrubbing repetition periods in Figure 6 can also be referred to. Finally, taking the average value of the variance values of the three scrubbing repetition periods can make the result more accurate.

[0068] It should be noted that at least one of the rotation speed of the wafer scrubbing device and the rotation speed of the wafer included in each simulated control parameter is different from the other simulated control parameters among the multiple simulated control parameters to avoid repetition among the multiple simulated control parameters.

[0069] In the embodiments of the present application, by simulating the results of wafer scrubbing with multiple calculated simulation control parameters, it is possible to intuitively understand the scrubbing situation of the wafer under different combinations of the rotation speed of the wafer scrubbing device and the rotation speed of the wafer, and then it is convenient to select more appropriate rotation speeds of the wafer scrubbing device and the wafer to scrub the wafer.

[0070] In a possible implementation manner, the process of determining multiple simulation control parameters according to the device parameters of the wafer scrubbing device, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer may further include:

[0071] Create rotational noise according to the rotation speed range of the wafer scrubbing device and the rotation speed range of the wafer, and then determine multiple simulation control parameters according to the rotational noise, the device parameters of the wafer scrubbing device, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer.

[0072] Since during the actual scrubbing process, the rotation speeds of the wafer scrubbing device and the wafer may fluctuate, rotational noise can be added during the simulation process. For example, rotational noise is determined according to the rotation speed range of the wafer scrubbing device and the rotation speed range of the wafer, that is, the upper and lower boundary rotation speeds of the wafer scrubbing device, and the upper and lower boundary rotation speeds of the wafer, and the rotational noise is combined with the device parameters of the wafer scrubbing device, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer to determine multiple simulation control parameters.

[0073] In the embodiments of the present application, by adding rotational noise during the process of determining multiple simulation control parameters, the accuracy of the simulation can be improved, and further the accuracy of determining the rotation speeds of the wafer scrubbing device and the wafer can be improved.

[0074] In a possible implementation manner, the automatic wafer scrubbing process may further include:

[0075] When the scrubbed surface of the wafer is perpendicular to the horizontal plane, if the second control parameter indicates that the speed of controlling the rotation of the wafer scrubbing device is less than the speed of controlling the rotation of the outer edge of the wafer, or the speed of controlling the rotation of the wafer is greater than the first speed threshold, a speed reduction prompt is issued. When the scrubbed surface of the wafer is parallel to the horizontal plane, if the second control parameter indicates that the speed of controlling the rotation of the wafer scrubbing device is less than the speed of controlling the rotation of the outer edge of the wafer, or the speed of controlling the rotation of the wafer is greater than the second speed threshold, a speed reduction prompt is issued.

[0076] The wafer scrubbing scenarios can be divided into two types. One is that the wafer is placed perpendicular to the horizontal plane, and the other is that the wafer is placed parallel to the horizontal plane. During the wafer scrubbing process, if the rotation speed is too high, it is easy to cause speed drop. Therefore, it is necessary to limit the rotation speed of the wafer. In addition, if the rotation speed of the wafer scrubbing device is less than the rotation speed of the outer edge of the wafer, there is also a risk of speed drop. Therefore, when the above situation occurs, a speed drop prompt needs to be issued to indicate that there is a risk in the second control parameter.

[0077] It should be noted that the first speed threshold is less than the second speed threshold.

[0078] In the embodiments of the present application, by providing different speed drop prompt conditions in different scrubbing scenarios, the safety of wafer scrubbing can be improved.

[0079] See Figure 9 , another embodiment of the present application provides a method for generating a wafer scrubbing scheme, including the following steps:

[0080] Step 201, receive the input first control parameter, where the first control parameter is used to control the rotating brush of the wafer scrubbing device to scrub the wafer;

[0081] In this embodiment, the wafer scrubbing device can be a horizontal scrubbing device or a vertical scrubbing device. The wafer scrubbing device includes a box body, a support component, a rotating brush, and a spraying component. The box body has a receiving cavity, and the wafer can be placed in the receiving cavity for cleaning. At the same time, the box body can also provide a stable installation foundation for the internal structure. The wafer scrubbing device further includes a support component. The support component is arranged in the box body to support and drive the wafer to rotate.

[0082] When the wafer scrubbing device is a horizontal scrubbing device, the support components are circumferentially distributed around the wafer, and when the wafer is placed in the box body for cleaning, the support components can abut against the outer edge of the wafer. Thus, when the support components rotate, the wafer can be driven to rotate synchronously. When the wafer scrubbing device is a vertical scrubbing device, the support component can be located below the wafer, and when the wafer is placed in the box body for cleaning, the support component can abut against the outer edge of the wafer. Thus, when the support component rotates, the wafer can be driven to rotate synchronously.

[0083] The wafer scrubbing device further includes a rotating brush, which is horizontally arranged in the box body and can rotate around an axis to scrub the surface of the wafer. The rotation axis of the rotating brush is substantially parallel to the surface of the wafer. Therefore, the rotating brush can scrub the wafer by rotating to scrub off the contaminants on the surface of the wafer.

[0084] In the semiconductor processing process, since it is mainly automated production, during the process of scrubbing a wafer, relevant equipment is generally controlled by control parameters to perform scrubbing. In order to accurately analyze the wafer scrubbing process, first, obtain the equipment parameters of the wafer scrubbing device used to scrub the wafer and the first control parameters for scrubbing the wafer.

[0085] The structure of the wafer scrubbing device can refer to the above content and will not be elaborated here.

[0086] The first control parameter is a control parameter used to control the wafer scrubbing device to perform the scrubbing action, such as the rotational speed of the roller brush, the rotational speed of the wafer, the cleaning liquid spraying speed, the scrubbing time, the contact frequency between the roller brush and the wafer, etc.

[0087] Step 202: According to the equipment parameters of the wafer scrubbing device and the first control parameter, perform fitting calculation on the process of scrubbing the wafer by the roller brush of the wafer scrubbing device, obtain the scrubbing effect of each position of the wafer under the control of the first control parameter, and display it.

[0088] The equipment parameters of the wafer scrubbing device can include the cavity size, the diameter of the roller brush, the size of the scrubbing surface on the roller brush, the length of the spray bar, the nozzle parameters on the spray bar, etc. In this step, mainly various parameters of the roller brush directly related to the scrubbing process are used.

[0089] The parameters for performing fitting calculation on the scrubbing process mainly involve three aspects, namely the parameters of the wafer, the parameters of the roller brush, and the first control parameter. Among them, the size of the wafer is fixed, such as 8 inches, 12 inches, etc., making the parameters of the wafer relatively fixed, and the equipment parameters of the wafer scrubbing device are also relatively fixed. Then, mainly based on the input first control parameter, combined with the two relatively fixed wafer parameters and roller brush parameters, the scrubbing process can be fitted to obtain the number of scrubbing times at each position on the wafer when the wafer scrubbing device is controlled according to the first control parameter, and the number of scrubbing times can be used as the scrubbing effect, or the scrubbing effect can be obtained by converting the number of scrubbing times.

[0090] Specifically, generally speaking, the more scrubbing effect, the better the scrubbing effect; however, for the wafer, the nano-scale structure on it is easily damaged, so it is necessary to prevent over-scrubbing. Therefore, when determining the scrubbing effect, it is necessary to judge whether the number of scrubbing times will cause over-scrubbing. For this purpose, in one implementation, when the number of scrubbing times at a certain position exceeds the threshold, it can be judged that there is an over-scrubbing situation. In another implementation, the number of scrubbing times at each position can be input into a preset neural network model, and the neural network model combines the surface structure characteristics of the wafer to predict the scrubbing effect according to the number of scrubbing times at each position.

[0091] Step 203: Receive the brushing scheme generation operation input in response to the displayed brushing effect, and determine and generate a wafer brushing scheme.

[0092] In this embodiment, a wafer brushing scheme can be generated according to the first control parameter corresponding to the brushing scheme generation operation, or the first control parameter can be adjusted and then a wafer brushing scheme can be generated, both of which are within the protection scope of this application.

[0093] By displaying the brushing effects of the respective regions of the wafer determined according to the first control parameter, the staff can clearly understand the brushing effect of brushing the wafer with the first control parameter. The staff can selectively adjust the first control parameter according to the difference between the understood effect and the actual desired effect.

[0094] In the embodiment of this application, by analyzing the situation of the wafer being brushed and displaying the brushing effect that can reflect the brushing situation, the staff can judge whether the first control parameter used to brush the wafer can fully brush the wafer, whether it can achieve the expected effect, whether there are problems such as missed brushing, and then can determine whether to generate a wafer brushing scheme according to the first control parameter, greatly simplifying the setting process of the control parameter and ensuring and improving the wafer cleaning effect.

[0095] Furthermore, in order to achieve better effect prediction, the brushing effect can be calculated in combination with the specific structure of the wafer cleaning device.

[0096] Specifically, the roller brush has a greater influence on the brushing effect. The surface of the roller brush has regularly arranged protrusions, and the brushing surface on the protrusions contacts the wafer and brushes the wafer. A plurality of brushing surfaces 12 are provided on the surface of the roller brush, and the plurality of brushing surfaces 12 are arranged periodically. The spacing between the brushing surfaces 12 on the same circumference is the same. The brushing surfaces 12 can be arranged periodically in a matrix form or in a rotating form, or can be symmetrically distributed periodically from the center to both sides, etc., all of which are within the protection scope of this application.

[0097] For example, as Figure 2 shown, taking a certain circumference 21 on the wafer 2 as an example, the circumference 13 in the roller brush 1 brushes the circumference 21. During the brushing process, the wafer 2 rotates at the wafer rotation speed included in the first control parameter, and the roller brush 1 also rotates at the roller brush rotation speed included in the first control parameter. The plurality of brushing surfaces 12 provided on the surface of the roller brush 1 will repeatedly brush the circumference 21 on the wafer 2, and based on this, the brushing effect can be calculated.

[0098] Specifically, when a wafer is scrubbed using a roller brush with multiple scrubbing surfaces, the equipment parameters of the wafer scrubbing device include the size of the scrubbing surfaces of the wafer scrubbing device and the length of the roller brush repeating unit. The scrubbing surfaces on the wafer scrubbing device are arranged periodically, and the length of the roller brush repeating unit is the sum of the length of the scrubbing surface and the shortest distance between adjacent scrubbing surfaces in the rotation direction of the wafer scrubbing device. On this basis, referring to Figure 10 , step 202 of calculating the scrubbing effect can specifically include steps 2021-2022.

[0099] Step 2021: Receive at least two specified scrubbing cycle positions, and determine the roller brush repeating units corresponding to each scrubbing cycle position. The scrubbing cycle positions at least include the following two types: the center position of the scrubbing surface, the position of the longest distance between adjacent scrubbing surfaces in the rotation direction of the wafer scrubbing device, and the tangent position of the scrubbing surface in the rotation direction.

[0100] Figure 6 is a schematic diagram of the arrangement of the scrubbing surfaces of the roller brush according to an embodiment of the present application. Figure 6 Three scrubbing cycle positions are shown, namely positions 3, 4, and 5. Position 3 is the center position of the scrubbing surface, position 4 is the tangent position of the scrubbing surface in the rotation direction, and position 5 is the position of the shortest distance between adjacent scrubbing surfaces in the rotation direction of the wafer scrubbing device. The distance between the roller brush repeating units corresponding to position 3 and position 4 is the same, but the length of the scrubbing surface at position 4 is less than that at position 3, and the length of the roller brush repeating unit corresponding to position 5 is the shortest. It can be seen that during the scrubbing of the wafer 2, in the case where the circumference of the wafer 2 passes through the scrubbing surface 12 of the roller brush 1 on the wafer scrubbing device, the least number of times the circumference passes through the scrubbing surface 12 is in the range from position 3 to position 4, and the most number of times is in the range from position 4 to position 5. Among them, position 4 is tangent to the scrubbing surface 12 between two adjacent scrubbing surfaces passed through. After passing through position 4, the number of times the circumference passes through the scrubbing surface 12 increases. Position 5 has the shortest length of the roller brush repeating unit in the case of passing through the scrubbing surface 12 the most times. Therefore, by analyzing positions 3, 4, and 5, the wafer scrubbing situation is obtained as the threshold for all circumferences in the entire wafer 2.

[0101] It should be noted that the above three scrubbing cycle positions can be determined according to the periodic distribution of the scrubbing surfaces of the matrix roller brush. For other periodic distribution schemes of the scrubbing surfaces, such as rotational periodic arrangement, or symmetric periodic distribution from the center to both sides, etc., similar methods can also be used to determine the scrubbing cycle positions, as long as they can characterize the repetition of the scrubbing surfaces, and they are all within the protection scope of the present application.

[0102] In addition, in the above step 2021, the brushing effect can be analyzed and calculated for multiple brushing cycle positions, or any two of them can be calculated, which are all within the protection scope of this application.

[0103] Step 2022: According to the equipment parameters of the wafer brushing device and the first control parameter, perform fitting calculation on the areas corresponding to each brushing cycle position on the wafer, and obtain and display the brushing effect.

[0104] In this embodiment, the areas corresponding to each brushing cycle position on the wafer can specifically be a certain circumference. For each circumference, the wafer repeat unit corresponding to the roller brush repeat unit on the circumference of the wafer can be determined respectively. The wafer repeat unit is the wafer area brushed by the roller brush repeat unit at the set roller brush rotation speed and wafer rotation speed. Determine the number of cycle passes of the brushing surface through the wafer repeat unit within the first rotation cycle of the wafer brushing device according to the first control parameter. According to the number of cycle passes, the wafer rotation speed, and the roller brush rotation speed, determine the number of brushing repeats of the wafer repeat unit brushed by the roller brush repeat unit within the second rotation cycle of the wafer. According to the number of brushing repeats corresponding to each wafer repeat unit, determine the brushing effect of each area of the wafer within the repeat cycle.

[0105] As Figure 2 shown, when the roller brush 1 of the wafer brushing device contacts the wafer 2, the position corresponding to the roller brush repeat unit 11 on the wafer 2 is the wafer repeat unit 22. According to the wafer rotation speed and the roller brush rotation speed included in the first control parameter, the number of cycle passes of the brushing surface 12 through the wafer repeat unit 22 within the first rotation cycle of the roller brush 1 of the wafer brushing device can be determined. Furthermore, according to the number of cycle passes, the wafer rotation speed, and the roller brush rotation speed, determine the number of brushing repeats of the wafer repeat unit 22 brushed by the roller brush repeat unit 11 within the second rotation cycle of the wafer 2. Thus, the brushing effect of each area of the wafer 2 within the repeat cycle can be inferred.

[0106] It should be noted that the calculated number of cycle passes may not be an integer. When the number of cycle passes is not an integer, after each rotation of the roller brush 1 of the wafer brushing device, the position of the wafer repeat unit 22 relative to the roller brush repeat unit 11 needs to be re-determined according to the decimal part of the number of cycle passes. When the starting position of the wafer repeat unit 22 is aligned with the starting position of the roller brush repeat unit 11 for the second time, it is regarded as a repeat cycle. The subsequent brushing process is the same as the brushing process within the repeat cycle. For the convenience of statistical calculation and reduction of the calculation amount, for a wafer repeat unit 22, the number of brushings within a repeat cycle can be calculated.

[0107] Exemplarily, for the convenience of calculation, one decimal place can be retained each time. Then refer to Figure 4, a wafer repeating unit 22 can be divided into 10 parts. Of course, 10 parts are only for illustration and do not limit this application.

[0108] In this application, the position of the wafer repeating unit 22 relative to the roller brush repeating unit 11 can be re-determined according to the decimal part in each roller brush rotation cycle loop. Figure 4 The abscissa in represents a wafer repeating unit, and the ordinate represents multiple roller brush rotation cycles loop. The filled blocks in each loop represent the brushing surface area in the roller brush repeating unit 11, and their positions in the figure represent the positions of the roller brush repeating unit on the wafer repeating unit. As Figure 4 shown, when the roller brush rotates one week, the starting position of the brushing surface moves backward by 0.6 relative to the position of the wafer repeating unit 22, that is, the decimal place of the number of passes in each cycle decreases by 0.6. Until after 5 roller brush rotation cycles loop, the decimal place is 0 again, then 5 loops can be regarded as a repeating cycle. Subsequently, the roller brush rotates continuously, repeating the brushing situation of this repeating cycle until the end. The brushing times of each position in the wafer repeating unit 22 can be counted according to the Figure 4 divided number of parts. The statistical results can be shown as brushing once, brushing twice, etc. as shown above the figure. Since the brushing process is continuously repeated based on the repeating cycle, the statistical results of one repeating cycle can be used as the statistical results of the brushing times of this wafer repeating unit 22 in the entire brushing process.

[0109] For the convenience of subsequent display, further calculation and processing can be performed on the brushing times. For example, the variances of the brushing times of the roller brush repeating units corresponding to different brushing cycle positions are calculated respectively, and then the average value of multiple variances is calculated to obtain the overall brushing uniformity corresponding to the wafer rotation speed and the roller brush rotation speed, and it can be used as the brushing effect for subsequent display. The specific display scheme will be described later.

[0110] The solution provided in this embodiment, by setting the brushing cycle positions for the periodically arranged brushing surfaces and calculating the brushing effects of the areas on the wafer corresponding to the respective brushing cycle positions within the corresponding repeating cycles, can make the calculated brushing effects of each area on the wafer cover as much as possible the situations of different positions on the wafer being brushed, improving the closeness of the calculated results to the actual brushing results and the reference degree of the displayed brushing effects for the staff.

[0111] After calculating the brushing effect, the brushing effect can be displayed to obtain a wafer brushing scheme recognized by the staff.

[0112] Optionally, in this embodiment, when demonstrating the brushing effect, the brushing effects of each area of the wafer determined according to the first control parameter are demonstrated, including at least one of the following: demonstrating the brushing effects corresponding to the positions of each brushing cycle on the wafer respectively; demonstrating the statistical results of the brushing effects corresponding to the positions of each brushing cycle on the wafer; demonstrating the predicted wafer brushing effect diagram based on the brushing effects corresponding to the positions of each brushing cycle on the wafer.

[0113] See Figure 11 , which shows a brushing effect diagram corresponding to the position of the brushing cycle. Figure 11 shows the number of brushings corresponding to three positions of the brushing cycle within the repetition cycle respectively, and takes it as the brushing effect. Specifically, the number of brushings can be determined according to the actual brushing time, and the actual brushing time can be determined according to the rotation cycle of the wafer and the rotation cycle of the roller brush included in the repetition cycle, as well as the number of rotation cycles of the wafer and the number of rotation cycles of the roller brush. It can be seen that although there is no missed brushing interval at positions 3 and 5 under this working condition, the distribution of the brushing effect is very uneven, and there is a missed brushing interval at position 4. This working condition will also cause insufficient brushing of the wafer, resulting in a reduction in the effect of the brushing process.

[0114] In addition, the statistical results of the brushing effects of the areas corresponding to the positions of each brushing cycle on the wafer can also be directly demonstrated, such as the missed brushing rate, the variance of the number of brushings, etc. In addition, the statistical result diagram of the brushing effects of the areas corresponding to the positions of each brushing cycle on the wafer within the corresponding repetition cycle can also be demonstrated. The statistical result diagram can be a circle with the same shape as the wafer, and the color blocks in the diagram represent the distribution of the brushing effect at this position.

[0115] Optionally, in another embodiment of the present application, if the roller brush rotation speed and the wafer rotation speed included in the first control parameter are range values; then when demonstrating, using the roller brush rotation speed and the wafer rotation speed as the coordinate axes, and using the comprehensive score of the brushing effects of each area of the wafer as the coordinate value for demonstration. The comprehensive score can specifically be the overall brushing uniformity data corresponding to each wafer rotation speed and roller brush rotation speed calculated above. See Figure 8 , the abscissa can be the roller brush rotation speed, the ordinate can be the wafer rotation speed, and the gray scale of the color blocks in the diagram is used to represent the comprehensive score value of the brushing effect. The user can determine whether the brushing effect can meet the expectation based on the demonstrated color blocks.

[0116] After observing the demonstrated brushing effect, if the brushing effect can meet the expectation, the staff can directly input the brushing plan generation operation to generate a brushing plan according to the first control parameter; if it does not meet the expectation, the adjustment operation for the first control parameter can be input. If adjustment is required, then see Figure 12 , step 203 can specifically include:

[0117] Step 2031: Receive an adjustment operation input in response to the displayed brushing effect, and adjust the first control parameter according to the adjustment operation to generate a second control parameter.

[0118] In this embodiment, the first control parameter includes the roller brush rotation speed and the wafer rotation speed. The receiving of the adjustment operation in response to the displayed brushing effect and the adjustment of the first control parameter according to the adjustment operation to generate a second control parameter includes: receiving the adjustment operation, determining the target value of the roller brush rotation speed and / or the wafer rotation speed input by the adjustment operation; and generating a second control parameter according to the target value of the roller brush rotation speed and / or the wafer rotation speed.

[0119] The staff can input adjustment parameters through an intuitive input box. This input box can be a part of the device control panel or an external control software connected to the device. The input box provides a user-friendly interface, enabling the staff to directly input numbers or select parameters to adjust the working state of the device.

[0120] Secondly, in addition to directly inputting parameters, the staff can also use data such as the displayed brushing effect for adjustment. For the above different display methods, the staff can perform adjustment operations in different ways.

[0121] Exemplarily, the adjustment operations for the roller brush rotation speed and the wafer rotation speed can specifically include target value input operations, size adjustment operations, or range adjustment operations. The roller brush rotation speed and the wafer rotation speed can be specific values or numerical ranges.

[0122] For example, receive the adjustment operation and determine the target value of the roller brush rotation speed and / or the wafer rotation speed input by the adjustment operation; the target value can be a specific numerical value, such as directly inputting a roller brush rotation speed of 500 rpm and a wafer rotation speed of 100 rpm; or it can be a numerical range, such as setting the roller brush rotation speed to 400 - 600 rpm and the wafer rotation speed to 80 - 120 rpm to meet different cleaning requirements.

[0123] Generate a second control parameter according to the target value of the roller brush rotation speed and / or the wafer rotation speed. Specifically, when a specific numerical value is input, the controller will directly use this numerical value as the new control parameter; while when a numerical range is input, the controller will determine that the control parameter includes multiple groups and can perform fitting calculations for each group of control parameters to obtain the brushing effect.

[0124] In addition to the target value input operation, the adjustment operation can also include a size adjustment operation, such as by adjusting a slider to increase or decrease the roller brush rotation speed or the wafer rotation speed by a certain value, for example, each time the roller brush rotation speed is increased by 20 rpm and the wafer rotation speed is decreased by 10 rpm.

[0125] Step 2032: Determine and display the scrubbing effect of each position of the wafer under the control of the second control parameter.

[0126] The specific manner of determining and displaying the scrubbing effect of the second control parameter is similar to that of determining and displaying the scrubbing effect corresponding to the first control parameter in the above embodiment, and will not be elaborated here.

[0127] Step 2033: Receive the scrubbing scheme generation operation input in response to the displayed scrubbing effect, and generate a wafer scrubbing scheme according to the first control parameter or the second control parameter.

[0128] Specifically, the staff can compare the scrubbing effects corresponding to the first control parameter and the second control parameter respectively, and select one that meets the expectation to generate a wafer scrubbing scheme; if it still does not meet the expectation, the current first control parameter and second control parameter can be used as the new first control parameter, and return to step 2031 for adjustment again until the scrubbing effect meets the expectation.

[0129] In a possible implementation manner, during the process of determining the second control parameter, the second control parameter can also be pre-verified according to the scrubbing conditions, which specifically may include: determining a plurality of simulated control parameters according to the equipment parameters of the wafer scrubbing device, the rotation speed range included in the second control device, and the rotation speed range of the wafer, calculating the scrubbing effect of each area of the wafer within the corresponding repetition period under the control of the plurality of simulated control parameters to obtain a plurality of simulated scrubbing results, respectively calculating the scrubbing effect variance of each area of the wafer corresponding to the plurality of simulated scrubbing results within the corresponding repetition period, and determining the second control parameter according to the simulated control parameter corresponding to the simulated scrubbing result with the smallest scrubbing effect variance and the scrubbing effect of each area of the wafer within the corresponding repetition period not being 0.

[0130] To determine the second control parameter for controlling the wafer scrubbing device and the wafer rotation speed, it is first necessary to clarify the device parameters of the wafer scrubbing device, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer. The device parameters of the wafer scrubbing device include the number of protrusions passed by the surface of the wafer scrubbing device rotating one week along the scrubbing direction. Then, multiple rotation speeds of the wafer scrubbing device and multiple rotation speeds of the wafer are selected within the rotation speed range of the wafer scrubbing device and the rotation speed range of the wafer, and thus multiple simulated control parameters are obtained. After obtaining multiple simulated control parameters, the wafer is respectively scrubbed according to each simulated control parameter, and during the simulated scrubbing process, the scrubbing effects of each area of the wafer within the corresponding repetition period are obtained to obtain multiple simulated scrubbing results. Specifically, the scrubbing effects of each area of the wafer within the corresponding repetition period can be normalized. The maximum number of times of the scrubbing effects of each area of the wafer within the corresponding repetition period is taken as 1, and the other times of the scrubbing effects of each area of the wafer within the corresponding repetition period except the maximum number of times are divided by the maximum number of times to obtain the normalization result as the simulated scrubbing result. Then, the variances of the scrubbing effects of each area of the wafer corresponding to multiple simulated scrubbing results within the corresponding repetition period are respectively calculated. The variances of the scrubbing effects of each area of the wafer within the corresponding repetition period can be as Figure 7 shown. Then, according to the simulated control parameter corresponding to the simulated scrubbing result with the smallest scrubbing effect variance and the scrubbing effects of each area of the wafer within the corresponding repetition period not being 0, the first control parameter is updated to obtain the second control parameter. The simulated scrubbing result can be as Figure 8 shown. Through Figure 8 it can be seen the relationship between the uniformity of wafer scrubbing and the rotation speed of the wafer scrubbing device and the rotation speed of the wafer. The higher the gray value, the better the uniformity of scrubbing. When determining the rotation speed of the wafer scrubbing device and the rotation speed of the wafer, the uniformity of scrubbing can also be referred to.

[0131] Specifically, when calculating multiple simulated scrubbing results according to multiple simulated control parameters, the different scrubbing repetition periods in Figure 6 can also be referred to. Finally, taking the average value of the variance values of the three scrubbing repetition periods can make the result more accurate.

[0132] It should be noted that at least one of the rotation speed of the wafer scrubbing device and the rotation speed of the wafer included in each simulated control parameter is different from the other simulated control parameters among the multiple simulated control parameters to avoid repetition among the multiple simulated control parameters.

[0133] In the embodiments of the present application, by calculating multiple simulated control parameters and calculating the results of wafer scrubbing, it is possible to intuitively understand the scrubbing situation of the wafer under different combinations of the rotation speed of the wafer scrubbing device and the rotation speed of the wafer, and thus it is convenient to select a more appropriate rotation speed of the wafer scrubbing device and the rotation speed of the wafer to scrub the wafer.

[0134] Figure 13 is a schematic diagram of a wafer automatic scrubbing device according to an embodiment of the present application, as Figure 13 shown, the wafer automatic scrubbing device 500 includes:

[0135] An acquisition module 501, configured to acquire device parameters of the wafer scrubbing device and a first control parameter for scrubbing the wafer;

[0136] A determination module 502, configured to determine the number of times each position of the wafer is scrubbed within a repetition period when the wafer scrubbing device scrubs the wafer according to the device parameters of the wafer scrubbing device and the first control parameter, where the repetition period is used to indicate the minimum repetition period when the wafer scrubbing device scrubs the wafer;

[0137] An adjustment module 503, configured to update the first control parameter to obtain a second control parameter if the number of times each area of the wafer is scrubbed within the corresponding repetition period meets the parameter update condition, so that when the wafer scrubbing device scrubs the wafer according to the second control parameter, the number of times each area of the wafer is scrubbed within the corresponding repetition period does not meet the parameter update condition.

[0138] During the semiconductor processing, mainly through automated production, in the process of scrubbing the wafer, generally, relevant equipment is controlled by control parameters to perform scrubbing. In order to fully scrub the wafer, first, the equipment parameters of the wafer scrubbing device that is about to scrub the wafer and the first control parameter for scrubbing the wafer are obtained in the current state. The equipment parameters of the wafer scrubbing device include the physical parameters related to the wafer scrubbing device itself. When no parameter control is performed, the scrubbing process will use the first control parameter for scrubbing. At this time, it is necessary to verify whether the relevant equipment can fully scrub the wafer under the control of the first control parameter. Therefore, according to the equipment parameters of the wafer scrubbing device and the first control parameter, the number of times each area of the wafer is scrubbed within the corresponding repetition period when the wafer scrubbing device is controlled by the first control parameter to scrub the wafer is determined. The repetition period is used to indicate the period during which the wafer scrubbing device scrubs the corresponding area on the wafer when scrubbing the wafer. Therefore, according to the situation within one repetition period, the situation of scrubbing the wafer with the first control parameter can be deduced. If the number of times each area of the wafer is scrubbed within the corresponding repetition period meets the parameter update condition, the first control parameter is updated to obtain the second control parameter, so that when the wafer scrubbing device is controlled by the second control parameter to scrub the wafer, the number of times each area of the wafer is scrubbed within the corresponding repetition period does not meet the parameter update condition.

[0139] In the embodiment of the present application, by analyzing the situation of the wafer being scrubbed within the repetition period, it is judged whether the first control parameter for scrubbing the wafer can fully scrub the wafer, and a relatively accurate result can be obtained, thereby ensuring that the wafer can be fully scrubbed.

[0140] In this embodiment, an electronic device 600 is provided, as Figure 14 shown. The electronic device 600 may include: a processor 601, a communications interface 602, a memory 603, and a communication bus 604. Among them:

[0141] The processor 601, the communications interface 602, and the memory 603 communicate with each other through the communication bus 604.

[0142] The communications interface 602 is used to communicate with other electronic devices or servers.

[0143] The processor 601 is used to execute the program 605, and specifically can execute the relevant steps in the foregoing embodiment of the method for automatically scrubbing the wafer.

[0144] Specifically, the program 605 may include program code, and the program code includes computer operation instructions.

[0145] The processor 601 may be a CPU, or a specific integrated circuit ASIC (Application Specific Integrated Circuit), or be configured as one or more integrated circuits. One or more processors included in the intelligent device may be of the same type of processor, such as one or more CPUs; or may be of different types of processors, such as one or more CPUs and one or more ASICs.

[0146] A memory 603 is used to store a program 605. The memory 603 may include a high-speed RAM memory, and may also include a non-volatile memory, such as at least one disk memory.

[0147] The program 605 can specifically be used to cause the processor 401 to execute the wafer automatic brushing method in the foregoing embodiments.

[0148] The electronic device 600 according to the embodiment of the present application can analyze the situation of the wafer being brushed within the repetition period, and determine whether the first control parameter for brushing the wafer can sufficiently brush the wafer, and can have a relatively accurate result, thereby ensuring that the wafer can be sufficiently brushed.

[0149] In this embodiment, a computer-readable storage medium is provided, which stores instructions for causing a machine to execute the wafer automatic brushing method as described herein. Specifically, a system or device equipped with a storage medium can be provided, and software program code for implementing the functions of any one of the above embodiments is stored on the storage medium, and causes a computer (or CPU or MPU) of the system or device to read and execute the program code stored on the storage medium.

[0150] In this case, the program code read from the storage medium itself can implement the functions in the above method embodiments, so the program code and the storage medium storing the program code constitute a part of the present application.

[0151] Embodiments of the storage medium for providing program code include floppy disks, hard disks, magneto-optical disks, optical disks (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), magnetic tapes, non-volatile memory cards, and ROMs. Optionally, the program code can be downloaded from a server computer via a communication network.

[0152] In this embodiment, a computer program product is provided, including computer instructions, and the computer instructions direct a computing device to perform the operations corresponding to the above method embodiments.

[0153] It should be noted that according to the needs of implementation, each component / step described in the embodiments of the present application can be split into more components / steps, or two or more components / steps or partial operations of components / steps can be combined into new components / steps to achieve the purpose of the embodiments of the present application.

[0154] The methods according to the embodiments of the present application described above can be implemented in hardware, firmware, or be implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or be implemented as computer code originally stored in a remote recording medium or a non-transitory machine-readable medium and downloaded through a network and to be stored in a local recording medium, so that the methods described herein can be stored as such software processes on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA). It can be understood that a computer, a processor, a microprocessor controller, or programmable hardware includes a storage component (such as a RAM, a ROM, a flash memory, etc.) that can store or receive software or computer code, and when the software or computer code is accessed and executed by the computer, the processor, or the hardware, the methods described herein are implemented. In addition, when a general-purpose computer accesses the code for implementing the methods shown herein, the execution of the code converts the general-purpose computer into a dedicated computer for executing the methods shown herein.

[0155] Although the present application has been shown and described with respect to one or more implementations, equivalent variations and modifications will occur to those skilled in the art based on a reading and understanding of this specification and the drawings. The present application includes all such modifications and changes and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the above-described components, the terms used to describe such components are intended to correspond to any component (unless otherwise indicated) that performs the specified function of the component (e.g., it is functionally equivalent), even if it is not structurally equivalent to the disclosed structure that performs the functions in the exemplary implementations of the present specification shown herein.

[0156] That is, the above description is only an embodiment of the present application, and does not limit the patent scope of the present application. All equivalent structural or equivalent process transformations made by using the content of the specification and drawings of the present application, such as the mutual combination of technical features between various embodiments, or direct or indirect application in other related technical fields, are similarly included in the patent protection scope of the present application.

[0157] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, "a plurality" means two or more unless otherwise specifically defined.

[0158] The above description of this application is provided to enable any person skilled in the art to make and use it. In the above description, various details are set forth for purposes of explanation. It should be understood that those of ordinary skill in the art can recognize that this application can be implemented without these specific details. In other embodiments, well-known processes will not be elaborated in detail so as not to obscure the description of this application with unnecessary details. Therefore, this application is not intended to be limited to the illustrated embodiments, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

[0159] It should be noted that, on the premise of no conflict, the various embodiments described in this application and / or the technical features in the various embodiments can be arbitrarily combined with each other, and the technical solutions obtained after the combination should also fall within the protection scope of this application.

[0160] It should be understood that the specific examples in the embodiments of this application are only for helping those skilled in the art better understand the embodiments of this application, rather than limiting the scope of the embodiments of this application. Those skilled in the art can make various improvements and modifications based on the above embodiments, and these improvements or modifications all fall within the protection scope of this application.

[0161] As described above, the above are only the specific implementation manners of this application, but the protection scope of this application is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in this application, and all should be covered by the protection scope of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims

1. An automatic wafer brushing method, characterized in that, Including: Obtaining the device parameters of the wafer scrubbing device and the first control parameters for scrubbing the wafer; According to the device parameters and the first control parameters, determining the number of times each position on the wafer is scrubbed within a repetition period when controlling the wafer scrubbing device to scrub the wafer according to the first control parameters; If the number of times each area of the wafer is scrubbed meets the parameter update condition, updating the first control parameter to obtain a second control parameter, so as to control the wafer scrubbing device to scrub the wafer according to the second control parameter.

2. The method according to claim 1, wherein The device parameters include: the length of the scrubbing surface of the roller brush of the wafer scrubbing device and the length of the roller brush repetition unit, wherein the scrubbing surfaces on the wafer scrubbing device are arranged periodically, and the length of the roller brush repetition unit is the sum of the length of the scrubbing surface and the shortest distance between adjacent scrubbing surfaces in the rotation direction of the wafer scrubbing device; The first control parameters include: the wafer rotation speed of the wafer when scrubbing the wafer and the roller brush rotation speed of the wafer scrubbing device.

3. The method according to claim 2, characterized in that, The determining the number of times each position on the wafer is scrubbed within a repetition period when the wafer scrubbing device scrubs the wafer according to the device parameters and the first control parameters includes: According to the device parameters, for each circumference on the wafer, respectively determining the wafer repetition unit corresponding to the roller brush repetition unit on the circumference of the wafer; According to the first control parameters, determining the number of times the scrubbing surface of the roller brush repetition unit passes through each position of the wafer repetition unit, and using the number of times each position is passed by the scrubbing surface as the number of times of scrubbing at that position, to obtain the number of times each position on the wafer is scrubbed within a repetition period.

4. The method according to claim 3, wherein The determining the number of times the scrubbing surface of the roller brush repetition unit passes through each position of the wafer repetition unit according to the first control parameters, and using the number of times each position is passed by the scrubbing surface as the number of times of scrubbing at that position, to obtain the number of times each position on the wafer is scrubbed within a repetition period includes: When the number of times the scrubbing surface of the roller brush repetition unit passes through each position of the wafer repetition unit is not an integer, re-determining the position of the wafer repetition unit relative to the roller brush repetition unit according to the decimal part of the number of times; Obtaining the number of times each position is passed by the scrubbing surface when the position of the roller brush repetition unit is aligned with the starting position of the roller brush repetition unit for the second time as the number of times of scrubbing at that position, to obtain the number of times each position on the wafer is scrubbed within a repetition period.

5. The method according to claim 2, wherein The parameter update condition includes: there is a position on the wafer where the number of times of scrubbing within the repetition period is 0.

6. The method according to any one of claims 1-5, characterized in that, The parameter update condition includes: the difference in the number of times of scrubbing between the position on the wafer with the most number of times of scrubbing within the repetition period and the position on the wafer with the least number of times of scrubbing within the repetition period is greater than a preset quantity threshold.

7. The method according to claim 1, characterized in that, The updating the first control parameter to obtain a second control parameter includes: Determine a plurality of simulated control parameters according to the device parameters, the rotation speed range of the wafer scrubbing device, and the rotation speed range of the wafer, wherein at least one of the rotation speed of the wafer scrubbing device and the rotation speed of the wafer included in each simulated control parameter is different from the other simulated control parameters in the plurality of simulated control parameters; Calculate the number of times each area of the wafer is scrubbed within the corresponding repetition period under the control of the plurality of simulated control parameters, and obtain a plurality of simulated scrubbing results; Calculate the variance of the number of scrubbing times of each area of the wafer corresponding to the plurality of simulated scrubbing results within the corresponding repetition period respectively; Update the first control parameter according to the simulated control parameter corresponding to the simulated scrubbing result with the smallest variance of the number of scrubbing times and the number of scrubbing times of each area of the wafer within the corresponding repetition period not being zero, and obtain a second control parameter.

8. The method according to claim 1, characterized in that The method further includes: When the scrubbed surface of the wafer is perpendicular to the horizontal plane, if the second control parameter indicates that the speed of controlling the rotation of the wafer scrubbing device is less than the speed of controlling the rotation of the outer edge of the wafer, or the speed of controlling the rotation of the wafer is greater than the first speed threshold, a speed reduction prompt is issued; When the scrubbed surface of the wafer is parallel to the horizontal plane, if the second control parameter indicates that the speed of controlling the rotation of the wafer scrubbing device is less than the speed of controlling the rotation of the outer edge of the wafer, or the speed of controlling the rotation of the wafer is greater than the second speed threshold, a speed reduction prompt is issued.

9. A method for generating a wafer scrubbing solution, characterized in that, Includes: Receive the input first control parameter, which is used to control the roller brush of the wafer scrubbing device to scrub the wafer; According to the device parameters of the wafer scrubbing device and the first control parameter, perform fitting calculation on the process of scrubbing the wafer by the roller brush of the wafer scrubbing device, obtain the scrubbing effect of each position of the wafer under the control of the first control parameter, and display it; Receive the scrubbing scheme generation operation input in response to the displayed scrubbing effect, and determine and generate a wafer scrubbing scheme.

10. An automatic wafer brushing device, characterized in that, Includes: An acquisition module, configured to acquire the device parameters of the wafer scrubbing device and the first control parameter for scrubbing the wafer; A determination module, configured to determine the number of times each position of the wafer is scrubbed within the repetition period when the wafer scrubbing device scrubs the wafer according to the device parameters and the first control parameter, wherein the repetition period is used to indicate the minimum repetition period when the wafer scrubbing device scrubs the wafer; An adjustment module, configured to update the first control parameter to obtain a second control parameter if the number of times each area of the wafer is scrubbed within the corresponding repetition period meets the parameter update condition, so that when the wafer scrubbing device scrubs the wafer according to the second control parameter, the number of times each area of the wafer is scrubbed within the corresponding repetition period does not meet the parameter update condition.

11. An electronic device, characterized in that, Includes: A processor, a communication interface, a memory, and a communication bus. The processor, the memory, and the communication interface complete mutual communication through the communication bus; A memory is used to store at least one executable instruction, and the executable instruction causes a processor to perform operations corresponding to the method described in any one of claims 1-9.

12. A computer storage medium, characterized in that, A computer program is stored thereon, and when the program is executed by a processor, it implements the method described in any one of claims 1-9.

13. A computer program product, characterized in that, It includes computer instructions, and the computer instructions direct a computing device to perform operations corresponding to the method described in any one of claims 1-9.

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