Method for processing glass through hole by laser, laser processing equipment and storage medium

Abstract

The invention provides a method for laser processing of a glass through hole, laser processing equipment and a storage medium. The method specifically comprises the following steps: determining a change relation of the diameter of a target hole in the depth direction; the increase amount of the diameter of the etched through hole relative to the diameter of the laser modified area changes in the depth direction; according to the increasing amount of the diameter of the target hole and the diameter of the etched through hole relative to the diameter of the laser modification area, the change relation of the diameter of the laser modification area in the depth direction of the to-be-machined material is determined; according to the diameter of the laser modification area, determining an on-axis light intensity spatial distribution diagram of the Bessel-like beam along the beam transmission direction, and obtaining a shaped Bessel-like beam; and modifying the to-be-processed material by using the shaped Bessel-like light beam, and then etching to obtain the processed material with the target hole. According to the invention, controllable modification on the glass in space along the depth direction is realized, and the diameter of the glass through hole along the depth direction is controllable in cooperation with differentiated etching time distribution along the depth direction of the glass.

Description

Technical Field

[0001] The present invention relates to the field of laser shaping processing, and particularly relates to a method for laser processing glass through-holes, a laser processing device, and a storage medium. Background Art

[0002] A large number of engineering applications require the use of glass micro through-holes (Through Glass Via, abbreviated as TGV). For example, 3D stacked chip interposer boards, Micro LED glass interposer boards, microfluidic laboratories, etc. Therefore, in recent years, the academic and industrial communities have attached great importance to the processing and preparation of glass micro through-holes.

[0003] Traditional processing techniques for glass materials (such as mechanical drilling) have obvious limitations when dealing with the manufacturing requirements of micron-level, high aspect ratio through-holes. This mechanical processing method not only generates significant residual stress on the glass substrate, which is prone to structural damage such as substrate cracking, but also its processing accuracy often fails to meet the technical standards of micro-nano manufacturing.

[0004] In contrast, the ultrafast laser modification combined with chemical etching method, with its excellent energy concentration characteristics, precise directivity and controllability, provides a new solution for the manufacture of glass through-holes, achieving a non-contact, high-precision processing effect, as Figure 1 shown.

[0005] The ultrafast laser modification combined with chemical etching method can be mainly divided into two steps: laser modification and chemical etching. After the laser modification step, a complete through-hole cannot be formed in the glass. Therefore, during the chemical etching step, the etching solution continuously penetrates from the glass surface into the interior. Due to the different contact times of different parts with the etching solution, a through-hole morphology as Figure 1 shown will be formed, and such a morphology will affect the through-hole quality. In the prior art, inhibitors are often used to inhibit the etching at the inlet and outlet ends, but it is still impossible to achieve the diameter consistency of the inlet end, center end and outlet end of the through-hole.

[0006] In addition, the existing processing solutions cannot accurately process special-shaped glass through-holes according to the design requirements. Summary of the Invention

[0007] Aiming at the deficiencies in the prior art, the present invention provides a method for laser processing glass through-holes. According to the different etching degrees of the etching solution in the depth direction, the diameter of the laser modification region in the depth direction is changed, so that the diameter of the laser modification region in the depth direction is inversely matched with the etching degree in the depth direction, thereby achieving precise processing to obtain the target hole.

[0008] The present invention achieves the above technical objectives through the following technical means.

[0009] A method for laser processing glass through-holes includes the following steps:

[0010] Determine the diameter of the target hole The variation relationship along the depth direction of the material to be processed is denoted as , where the vertical depth from the inlet end of the material is a variable;

[0011] Determine the increase in the diameter of the through-hole after etching compared to the diameter of the laser modified region under the condition of constant temperature The variation relationship along the depth direction of the material to be processed is denoted as ;

[0012] According to the diameter of the target hole and the increase in the diameter of the through-hole after etching compared to the diameter of the laser modified region , determine the variation relationship of the diameter of the laser modified region along the depth direction of the material to be processed, denoted as ; ;

[0013] According to the diameter of the laser modified region , determine the spatial distribution of the light intensity of the Bessel-like beam along the beam propagation direction to obtain the shaped Bessel-like beam;

[0014] Use the shaped Bessel-like beam to modify the material to be processed;

[0015] Etch the material to be processed after the modification treatment to obtain the target hole.

[0016] Furthermore, the increase in the diameter of the through-hole after etching compared to the diameter of the laser modified region gradually decreases from both sides of the material to be processed towards the inside.

[0017] Furthermore, determine the variation relationship of the increase in the diameter of the through-hole after etching compared to the diameter of the laser modified region along the depth direction of the material to be processed, specifically as follows:

[0018] Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, denoted as T(d);

[0019]

[0020] where: is the attenuation coefficient, is the thickness of the material to be processed; is the soaking time of the material to be processed in the etching solution;

[0021] Furthermore, the attenuation coefficient is determined by the performance of the etching solution and the chemical properties of the material.

[0022] The increase in the diameter of the through-hole after etching compared to the diameter of the laser modified region The variation relationship along the depth direction of the material to be processed is as follows:

[0023]

[0024] Where: is a proportionality coefficient, representing the influence of the exposure time and the percentage concentration of the etching solution on , with the unit of μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0025] Furthermore, the proportionality coefficient is determined by the performance of the etching solution and the chemical properties of the material.

[0026] Furthermore, the first correction value gradually increases from both sides of the material to be processed towards the inside. The first correction value is determined by the performance of the etching solution, the chemical properties of the material, and other working conditions. The variation relationship of the first correction value along the depth direction of the material to be processed is obtained through experiments.

[0027] Furthermore, the diameter of the laser modified region = the diameter of the target hole - the increase in the diameter of the through-hole after etching compared to the diameter of the laser modified region , and the expression is as follows: .

[0028] A laser processing device includes a processor and a memory. The memory stores computer-readable instructions. When the computer-readable instructions are executed by the processor, the steps in the method for laser processing glass through-holes as described above are run.

[0029] A storage medium stores a computer program. When the computer program is executed by a processor, the steps in the method for laser processing glass through-holes as described above are run.

[0030] The beneficial effects of the present invention are as follows:

[0031] 1. The method for laser processing glass through-holes according to the present invention changes the diameter of the laser-modified region in the depth direction according to the different etching degrees of the etching solution in the depth direction, so that the diameter of the laser-modified region in the depth direction is inversely matched with the etching degree in the depth direction, thereby achieving precise processing to obtain the target hole. Here, the inverse matching can be understood as that since the etching rate of the modified region is higher than that of the unmodified region and the modified region is completely etched, the greater the etching degree at a specific depth, the smaller the diameter of the laser-modified region is set; conversely, the smaller the etching degree at a specific depth, the larger the diameter of the laser-modified region is set. This matching ensures that each depth position can be moderately etched during the etching process, thereby achieving a uniform change in the diameter of the through-hole.

[0032] 2. The method for laser processing glass through-holes according to the present invention effectively suppresses the generation of the flare phenomenon and significantly improves the shape accuracy of the through-hole by optimizing the diameter distribution of the laser-modified region.

[0033] 3. The method for laser processing glass through-holes according to the present invention is suitable for processing target holes of various shapes, not limited to straight holes, but also can be drum-shaped holes, tapered holes or stepped holes. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. The following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, it is obvious that other drawings can also be obtained based on these drawings.

[0035] Figure 1 It is a schematic diagram of processing a glass through-hole with a conventional Bessel beam.

[0036] Figure 2 It is a schematic diagram of processing a uniform glass through-hole by the method for laser processing glass through-holes according to the present invention.

[0037] Figure 3 It is a schematic diagram of processing a drum-shaped glass through-hole by the method for laser processing glass through-holes according to the present invention.

[0038] Figure 4 It is a schematic diagram of processing a tapered glass through-hole by the method for laser processing glass through-holes according to the present invention.

[0039] In the figure:

[0040] 1 - Material to be processed; 2 - Through-hole; 3 - Inlet end; 4 - Central end; 5 - Outlet end. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0041] Embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0042] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "depth", "upper", "lower", "axial", "radial", "vertical", "horizontal", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0043] In the present invention, unless otherwise clearly specified and limited, the terms "mounted", "connected", "connected to", "fixed", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] The method for laser processing glass through holes according to the present invention includes the following steps:

[0045] S1: Determine the diameter of the target hole The variation relationship along the depth direction of the material to be processed is denoted as , where the vertical depth from the inlet end 3 of the material is a variable;

[0046] S2: Determine the increase in the diameter of the through hole after etching compared to the diameter of the laser modified region under the condition of constant temperature The variation relationship along the depth direction of the material to be processed is denoted as ; specifically as follows:

[0047] Determine the time actually exposed to the etching solution along the depth direction of the material to be processed, denoted as T(d);

[0048]

[0049] Wherein: is the attenuation coefficient, and the attenuation coefficient is the exposure rate, that is, the exposure time per unit depth; is the thickness of the material to be processed; is the duration for which the material to be processed is immersed in the etching solution;

[0050] Furthermore, the attenuation coefficient is determined by the properties of the etching solution and the chemical properties of the material.

[0051] The increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area varies along the depth direction of the material to be processed as follows:

[0052]

[0053] Wherein: is the proportionality coefficient, indicating the influence of the exposure time and the percentage concentration of the etching solution on , with the unit of μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0054] Furthermore, the proportionality coefficient is determined by the properties of the etching solution and the chemical properties of the material.

[0055] Furthermore, the first correction value gradually increases from the two sides of the material to be processed towards the inside, and the first correction value is determined by the properties of the etching solution, the chemical properties of the material, and other working conditions. The variation relationship of the first correction value along the depth direction of the material to be processed is obtained through experiments.

[0056] S3: According to the diameter of the target hole and the increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area , determine the variation relationship of the diameter of the laser modification area along the depth direction of the material to be processed, denoted as ; make the diameter of the laser modification area along the depth direction It is inversely matched with the etching degree in the depth direction, so as to achieve precise machining to obtain the target hole. The inverse matching can be understood as that since the etching rate of the modified region is higher than that of the unmodified region, and the modified region is completely etched, the greater the etching degree at a specific depth, the smaller the diameter of the laser modified region is set; conversely, the smaller the etching degree at a specific depth, the larger the diameter of the laser modified region is set. This matching ensures that each depth position can be moderately etched during the etching process, thus realizing a uniform change in the through-hole diameter.

[0057] The diameter of the laser modified region = the diameter of the target hole - the increase in the through-hole diameter after etching compared to the diameter of the laser modified region , and the expression is as follows: .

[0058] S4: According to the diameter of the laser modified region , determine the spatial distribution of the light intensity of the Bessel-like beam along the beam propagation direction to obtain the shaped Bessel-like beam;

[0059] S5: Use the shaped Bessel-like beam to modify the material to be processed;

[0060] S6: Etch the material to be processed after the modification treatment to obtain the target hole.

[0061] Example 1

[0062] As Figure 2 shown, in Example 1, the material to be processed 1 is quartz glass, and the thickness of the material to be processed 1 is 500 μm; in Example 1, the aperture of the target hole is 20 μm, and a through-hole structure with a uniform aperture is required to be realized. The method for laser processing a glass through-hole in Example 1 includes the following steps:

[0063] S1: Determine the variation relationship of the diameter of the target hole along the depth direction of the material to be processed, denoted as , where the vertical depth from the inlet end 3 of the material is a variable; = 20 μm.

[0064] S2: Determine the variation relationship of the increase in the through-hole diameter after etching compared to the diameter of the laser modified region along the depth direction of the material to be processed, denoted as ; specifically as follows:

[0065] Determine the time actually exposed to the etching solution along the depth direction of the material to be processed, denoted as T(d);

[0066]

[0067] Wherein: is the attenuation coefficient, and the attenuation coefficient is the exposure rate, that is, the exposure time per unit depth; is the thickness of the material to be processed; is the duration that the material to be processed is immersed in the etching solution;

[0068] The increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area gradually decreases from both sides of the material to be processed towards the inside, and the variation relationship along the depth direction of the material to be processed is as follows:

[0069]

[0070] Wherein: is the proportionality coefficient, indicating the influence of the exposure time and the percentage concentration of the etching solution on , with the unit of μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0071] In Example 1, the type of the etching solution is hydrofluoric acid solution, is 500 μm, is 20 min, is 1 / 25 min / μm, is 10 μm / min; the concentration of the etching solution is 5%. Then

[0072]

[0073]

[0074] The first correction value linearly increases from both sides of the material to be processed towards the inside,

[0075] In the above formula is determined by the specific working conditions.

[0076] S3: According to the diameter of the target hole and the increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area , determine the variation relationship of the diameter of the laser modification area along the depth direction of the material to be processed, denoted as ;

[0077] The diameter of the laser modification area = the diameter of the target hole - The increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area , and the expression is as follows: .

[0078] S4: In Example 1, the selected laser power is 30 W, the pulse width is 100 ps, and the frequency is 80 kHz. The required focal depth for processing is 500 μm. According to the beam reduction ratio of 50× of the 4f system selected, the focal depth length before beam reduction is calculated. The focal depth before beam reduction is the focal depth after beam reduction multiplied by the square of the beam reduction ratio, and the calculated value is 1250 mm. Considering the technical difficulty of the intensity modulation in the edge region of the focal depth, the focal depth before beam reduction is set to 1500 mm; According to the diameter of the laser modification area , based on the equivalent axicon phase hologram with a focal depth of 1500 mm, the particle swarm optimization algorithm is used to solve the phase hologram of the on-axis light intensity distribution along the beam propagation direction. After the beam passes through the phase modulation, it is reduced by the 4f system, and then the shaped Bessel-like beam is obtained. The distribution of its on-axis light intensity along the beam propagation direction is as Figure 2 shown.

[0079] S5: Using the shaped Bessel-like beam, modify the material to be processed;

[0080] S6: Immerse the material to be processed after the modification treatment completely in a 5% hydrofluoric acid solution to start etching. The etching time is set to 20 minutes, and the etching temperature is 30 °C. After the etching is completed, immediately rinse the glass substrate with a large amount of deionized water to remove the residual hydrofluoric acid solution on the surface, and obtain the target hole.

[0081] Example 2

[0082] As Figure 3 shown, in Example 2, the material to be processed 1 is soda-lime glass, and the thickness of the material to be processed 1 is 500 μm; the pore diameters of the inlet end 3 and the outlet end 4 of the target hole in Example 2 are 18 μm, and the pore diameter of the center end 4 is 20 μm; The method for laser processing glass through-holes in Example 2 includes the following steps:

[0083] S1: Determine the variation relationship of the diameter of the target hole along the depth direction of the material to be processed, denoted as , where the vertical depth from the inlet end 3 of the material is a variable; is a continuous curve.

[0084] S2: Determine the increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area along the depth direction of the material to be processed, denoted as ; specifically as follows:

[0085] Determine the actual exposure time of the material to be processed in the depth direction, denoted as T(d);

[0086]

[0087] Where: is the attenuation coefficient, and the attenuation coefficient is the exposure rate, that is, the exposure time per unit depth; is the thickness of the material to be processed; is the immersion time of the material to be processed in the etching solution;

[0088] The increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area Gradually decreases from both sides of the material to be processed towards the inside, The variation relationship in the depth direction of the material to be processed is as follows:

[0089]

[0090] Where: is the proportionality coefficient, indicating the influence of the exposure time and the percentage concentration of the etching solution on , with the unit of μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0091] In Example 2, the type of the etching solution is hydrofluoric acid solution, is 500 μm, is 20 min, is 1 / 25 min / μm, is 10 μm / min; the concentration of the etching solution is 5%. Then

[0092]

[0093]

[0094] The first correction value Increases linearly from both sides of the material to be processed towards the inside,

[0095] In the above formula is determined by the specific working conditions.

[0096] S3: According to the diameter of the target hole and the increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area , determine the variation relationship of the diameter of the laser modification area in the depth direction of the material to be processed, denoted as ;

[0097] The diameter of the laser modification area = The diameter of the target hole - The increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area , and the expression is as follows: .

[0098] S4: In Example 2, the power of the selected laser is 30 W, the pulse width is 100 ps, and the frequency is 80 kHz. The required focal depth for processing is 500 μm. According to the beam reduction ratio of 50× of the selected 4f system, the size of the focal depth length before beam reduction is calculated. The size of the focal depth before beam reduction is the size of the focal depth after beam reduction multiplied by the square of the beam reduction ratio, and the calculated value is 1250 mm. Considering the technical difficulty in the intensity modulation of the focal depth edge region, the size of the focal depth before beam reduction is set to 1500 mm; According to the diameter of the laser modification area , based on the equivalent axicon phase hologram with a focal depth of 1500 mm, the particle swarm optimization algorithm is used to solve the phase hologram of the on-axis light intensity distribution along the beam propagation direction. After the beam passes through phase modulation and is reduced by the 4f system, a shaped Bessel-like beam is obtained, and the distribution of its on-axis light intensity along the beam propagation direction is as Figure 3 shown.

[0099] S5: Use the shaped Bessel-like beam to modify the material to be processed;

[0100] S6: Immerse the material to be processed after modification treatment completely in a hydrofluoric acid solution with a concentration of 5% and start etching. The etching time is set to 20 minutes, and the etching temperature is 30°C. After etching is completed, immediately rinse the glass substrate with a large amount of deionized water to remove the residual hydrofluoric acid solution on the surface, and obtain the target hole.

[0101] Example 3

[0102] As Figure 4 shown, in Example 3, the material to be processed 1 is borosilicate glass, and the thickness of the material to be processed 1 is 500 μm; in Example 3, the target hole is a tapered hole, the aperture of the inlet end 3 is 15 μm, the aperture of the outlet end 4 is 25 μm, and the aperture increases linearly along the depth direction; The method for laser processing a glass through-hole in Example 3 includes the following steps:

[0103] S1: Determine the variation relationship of the diameter of the target hole along the depth direction of the material to be processed, denoted as , where the vertical depth from the inlet end 3 of the material is a variable;

[0104] S2: Determine the increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified area under the condition of constant temperature, and the variation relationship along the depth direction of the material to be processed, denoted as ; specifically as follows:

[0105] Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, denoted as T(d);

[0106]

[0107] where: is the attenuation coefficient, and the attenuation coefficient is the exposure rate, that is, the exposure time per unit depth; is the thickness of the material to be processed; is the soaking time of the material to be processed in the etching solution;

[0108] The increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified area gradually decreases from both sides of the material to be processed towards the inside, and the variation relationship along the depth direction of the material to be processed is as follows:

[0109]

[0110] where: is the proportionality coefficient, indicating the influence of the exposure time and the percentage concentration of the etching solution on , with the unit of μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0111] In Example 3, the type of the etching solution is hydrofluoric acid solution, = 500 μm, is 20 min, is 1 / 25 min / μm, is 8 μm / min; the concentration of the etching solution is 7%. Then

[0112]

[0113]

[0114] The first correction value increases linearly from both sides of the material to be processed towards the inside,

[0115] In the above formula is selected according to the specific working conditions.

[0116] S3: According to the diameter of the target hole And the increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified area , determine the diameter of the laser-modified area The variation relationship along the depth direction of the material to be processed is denoted as ;

[0117] The diameter of the laser-modified area = the diameter of the target hole - the increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified area , and the expression is as follows: .

[0118] S4: In Example 3, the selected laser power is 30 W, the pulse width is 100 ps, and the frequency is 80 kHz. The required focal depth for processing is 500 μm. According to the beam reduction ratio of 50× of the selected 4f system, the focal depth length before beam reduction is calculated. The size of the focal depth before beam reduction is the size of the focal depth after beam reduction multiplied by the square of the beam reduction ratio, and the calculated value is 1250 mm. Considering the technical difficulty of intensity modulation in the focal depth edge region, the size of the focal depth before beam reduction is set to 1500 mm; According to the diameter of the laser-modified area , based on the equivalent axicon phase hologram with a focal depth of 1500 mm, the particle swarm optimization algorithm is used to solve the phase hologram of the on-axis light intensity distribution along the beam propagation direction. After the beam passes through phase modulation and is reduced by the 4f system, a shaped Bessel-like beam is obtained, and the distribution of its on-axis light intensity along the beam propagation direction is as Figure 4 shown.

[0119] S5: Use the shaped Bessel-like beam to modify the material to be processed;

[0120] S6: Immerse the material to be processed after modification treatment completely in a hydrofluoric acid solution with a concentration of 7% to start etching. The etching time is set to 20 minutes, and the etching temperature is 30°C. After etching is completed, immediately rinse the glass substrate with a large amount of deionized water to remove the residual hydrofluoric acid solution on the surface, and obtain the target hole.

[0121] A laser processing device includes a processor and a memory. The memory stores computer-readable instructions. When the computer-readable instructions are executed by the processor, the steps in the method for laser processing glass through-holes are run.

[0122] A storage medium stores a computer program. When the computer program is executed by a processor, the steps in the method for laser processing glass through-holes are run.

[0123] It should be understood that although this specification is described according to various embodiments, not every embodiment only contains an independent technical solution. This narrative manner of the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0124] The series of detailed descriptions listed above are only specific descriptions of the feasible embodiments of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for laser processing of glass through-holes, comprising the following steps: Determine the diameter of the target hole The variation relationship along the depth direction of the material to be processed is denoted as , where the vertical depth from the inlet end of the material is a variable; Determine the increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified area under the condition of constant temperature The variation relationship along the depth direction of the material to be processed is denoted as ; According to the diameter of the target hole and the increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area , determine the diameter of the laser modification area The variation relationship along the depth direction of the material to be processed is denoted as ; According to the diameter of the laser modification area , determine the spatial distribution of the light intensity of the Bessel-like beam along the beam propagation direction, and obtain the reshaped Bessel-like beam; Using a shaped Bessel-like beam to modify the material to be processed; Etching the processed material to obtain the target hole.

2. The method for laser processing glass through holes according to claim 1, wherein The increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified area Gradually decreases from both sides of the material to be processed towards the inside.

3. The method for laser processing glass through holes according to claim 1, characterized in that Determine the increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified area The variation relationship along the depth direction of the material to be processed is as follows: Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, denoted as T(d); ； Wherein: is the attenuation coefficient, is the thickness of the material to be processed; is the duration for which the material to be processed is immersed in the etching solution; The attenuation coefficient is determined by the performance of the etching solution and the chemical properties of the material; The increase in the diameter of the through-hole after etching compared to the diameter of the laser modification area The variation relationship along the depth direction of the material to be processed is as follows: ； Wherein: is a proportionality coefficient, representing the influence of the exposure time and the percentage concentration of the etching solution on , with the unit of μm / min; is the percentage concentration of the etching solution; is the first correction value.

4. The method for laser processing glass through holes according to claim 3, wherein the first correction value gradually increases inward from both sides of the material to be processed, and the first correction value is determined by the performance of the etching solution, the chemical properties of the material, and other working conditions.

5. The method for laser processing of glass through holes according to claim 1, characterized in that, The diameter of the laser modification area = the diameter of the target hole - the increase in the diameter of the through hole after etching compared to the diameter of the laser modification area , and the expression is as follows: .

6. A laser processing device, characterized in that, Comprising a processor and a memory, the memory stores computer-readable instructions, and when the computer-readable instructions are executed by the processor, the steps in the method for laser processing of glass through-holes according to any one of claims 1-5 are run.

7. A storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, the steps in the method for laser processing of glass through-holes according to any one of claims 1-5 are run.

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