Protective film forming method, protective film forming apparatus, and substrate processing system

Abstract

The invention provides a protective film forming method, a protective film forming apparatus and a substrate processing system, which can appropriately form a protective film on the periphery of a substrate with a plurality of patterned layers on the surface. The protective film forming method includes: a step (A) of forming a protective film on a peripheral edge portion of a substrate by supplying a coating liquid for forming a protective film to a surface of the substrate from a surface-side coating portion located on a surface side of the substrate while rotating the substrate; a step (B) in which, after the step (A), a cleaning liquid is supplied to the back surface of the substrate from a cleaning liquid supply unit positioned on the back surface side of the substrate while rotating the substrate, thereby cleaning the back surface and the peripheral end surface of the substrate; and a step (C) in which, after the step (B), the substrate is rotated, a coating liquid is supplied to the back surface of the substrate from a back surface-side coating unit located on the back surface side of the substrate, and a protective film is formed on the back surface and the peripheral end surface of the peripheral edge portion of the substrate.

Description

Technical Field

[0001] The present disclosure relates to a method for forming a protective film, an apparatus for forming a protective film, and a substrate processing system. Background Art

[0002] In Patent Document 1, a coating and development method is disclosed, which includes the following steps: applying a metal-containing resist on the surface of a substrate to form a resist film, and exposing the resist film; and supplying a developer to the surface of the substrate to develop the resist film. Before the development step, the coating and development method further includes the following step: forming a protective film for preventing contact with the developer on the peripheral portion of the substrate where no resist film is formed, and at least on the peripheral surface and the back surface peripheral portion.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-49987 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The technology related to the present disclosure appropriately forms a protective film on the peripheral portion of a substrate having a multilayer patterned layer on its surface.

[0008] Solutions to the Problems

[0009] One aspect of the present disclosure is a method for forming a protective film on the peripheral portion of a substrate having a multilayer patterned layer on its surface. The method includes: Step (A), while rotating the substrate, supplying a coating liquid for forming the protective film from a surface-side coating portion located on the surface side of the substrate to the surface of the substrate to form the protective film on the peripheral portion of the substrate; Step (B), after Step (A), while rotating the substrate, supplying a cleaning liquid from a cleaning liquid supply portion located on the back side of the substrate to the back side of the substrate to clean the back side and the peripheral surface of the substrate; and Step (C), after Step (B), while rotating the substrate, supplying the coating liquid from a back-side coating portion located on the back side of the substrate to the back side of the substrate to form the protective film on the back side and the peripheral surface of the peripheral portion of the substrate.

[0010] Effects of the Invention

[0011] According to the present disclosure, a protective film can be appropriately formed on the peripheral portion of a substrate having a plurality of patterned layers on its surface. Brief Description of the Drawings

[0012] Figure 1It is a diagram showing a substrate with a patterned layer having multiple layers.

[0013] Figure 2 It is a diagram schematically showing an outline of the structure of a wafer processing system which is a substrate processing system including a protective film forming apparatus according to the first embodiment.

[0014] Figure 3 It is an explanatory diagram schematically showing an outline of the structure of the protective film forming apparatus according to the first embodiment when viewed from the side.

[0015] Figure 4 It is an explanatory diagram schematically showing an outline of the structure of the protective film forming apparatus according to the first embodiment when viewed from above.

[0016] Figure 5 It is an explanatory diagram showing the ejection angle of the surface side coating nozzle with respect to the substrate when viewed from above.

[0017] Figure 6 It is an explanatory diagram showing the ejection angle of the surface side coating nozzle with respect to the substrate when viewed from the side.

[0018] Figure 7 It is a flowchart showing the main processes of the processing sequence executed by the wafer processing system.

[0019] Figure 8 It is a perspective view showing the state around the substrate in the above-mentioned processing sequence.

[0020] Figure 9 It is a partial enlarged cross-sectional view showing the state near the peripheral portion of the substrate in the above-mentioned processing sequence.

[0021] Figure 10 It is a diagram for explaining a protective film forming method according to a comparative mode.

[0022] Figure 11 It is a diagram showing another example of the arrangement number and position of the back side coating and cleaning nozzles.

[0023] Figure 12 It is a diagram showing another example of the back side coating nozzle.

[0024] Figure 13 It is a diagram showing another example of the back side coating nozzle.

[0025] Figure 14 It is a diagram showing another example of the back side coating nozzle.

[0026] Figure 15 It is an explanatory diagram schematically showing an outline of the structure of the protective film forming apparatus according to the second embodiment when viewed from the side.

[0027] Figure 16 This is an explanatory diagram schematically showing an overview of the structure of a protective film forming apparatus according to a second embodiment when viewed from above. Detailed implementation mode

[0028] In the lithography process in the manufacturing process of semiconductor devices with a multilayer structure such as 3D NAND flash memories, a coating process of supplying a coating liquid onto a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") to form a resist film, an exposure process of exposing the resist film with a specified pattern, a development process of developing the substrate after the exposure process to form a pattern of the resist, etc. are carried out. In addition, an etching process of the substrate is carried out using the pattern of the resist as a mask, etc., to form a patterned layer on the substrate. In addition, until a semiconductor device with a multilayer structure is formed, the sequence of forming a patterned layer on the substrate as described above is repeated multiple times to generate a substrate Su having multiple layers of patterned layers PL on the surface. Figure 1 A part of this substrate Su is shown.

[0029] In addition, since the peripheral portion Su1 of the substrate Su having multiple layers of patterned layers PL on the surface is exposed, it may be damaged in subsequent processes performed on the substrate Su. For example, when the substrate Su having multiple layers of patterned layers PL on the surface has a silicon base material, in a cleaning process of removing a layer PL1 made of amorphous silicon, which is a material of the same type as the silicon in the substrate Su, using a cleaning liquid through batch processing, the peripheral portion Su1 of the substrate Su may be damaged. Specifically, the layer PL1 is a layer that fills the holes H of the patterned layer PL.

[0030] Since the peripheral portion Su1 of the substrate Su may be damaged as described above, it is considered to form a protective film on this peripheral portion Su1. Specifically, it is considered to supply a coating liquid for forming a protective film onto the substrate Su while rotating the substrate Su to form a protective film for the above-mentioned cleaning process on the peripheral portion Su1 of the substrate Su. However, some forming methods cannot appropriately form a protective film. Specifically, for example, as follows.

[0031] That is, the surface of the peripheral portion Su1 of the substrate Su is damaged not only in the process after forming the multilayer patterned layer PL, but also in the etching for forming the patterned layer PL. Therefore, there are step portions when forming the protective film. When the rotation speed of the substrate Su during the formation of the protective film is reduced so that the shoulders of the step portions on the surface of the peripheral portion Su1 are not exposed, abnormalities sometimes occur in the protective film formed on the back surface of the peripheral portion Su1 of the substrate Su. In addition, the front surface of the peripheral portion Su1 of the substrate Su is sometimes continuously damaged due to the cleaning process performed by batch processing and the etching for forming the patterned layer PL. As the damage accumulates, there are sometimes defects in part, which cause problems such as the generation of particles. Therefore, a protective film is required. In addition, when the back surface and the peripheral end surface of the peripheral portion Su1 of the substrate Su are damaged due to the cleaning process performed by batch processing, the damaged part sometimes lacks when contacting a substrate processing device such as a device for removing the protective film or a substrate transfer mechanism, which becomes a cause of cross-contamination. Therefore, a protective film is also required for the back surface and the peripheral end surface of the peripheral portion Su1 of the substrate Su.

[0032] Therefore, the technology according to the present disclosure appropriately forms a protective film on the peripheral portion of a substrate having a multilayer patterned layer on its surface.

[0033] Next, the structures of the protective film forming device and the substrate processing system according to the present embodiment will be described with reference to the drawings. In addition, in this specification, for elements having substantially the same functional structure, repeated descriptions are omitted by assigning the same reference numerals.

[0034] (First Embodiment)

[0035] <Wafer Processing System>

[0036] Figure 2 FIG. schematically shows an outline of the structure of a wafer processing system which is a substrate processing system including the protective film forming device according to the first embodiment.

[0037] Figure 2 The wafer processing system 1 of FIG. includes a coating system 2, a cleaning system 3, and a removal system 4.

[0038] The coating system 2 has a loading station 2a and a processing station 2b.

[0039] The loading station 2a loads and unloads wafers as substrates in units of carriers. A carrier is a container capable of collectively accommodating a plurality of wafers.

[0040] The processing station 2b has a protective film forming device 11, a heat treatment device 12, and a transfer mechanism 13. The protective film forming device 11 and the heat treatment device 12 respectively perform processing on wafers one by one.

[0041] The protective film forming device 11 forms a protective film on the peripheral portion of a wafer having a multi-layered patterned layer on its surface, such as the substrate Su Figure 1 . The above-mentioned patterned layer is formed on the surface of the wafer through a coating process of supplying a coating liquid onto the wafer to form a resist film, an exposure process of exposing the resist film with a specified pattern, a development process of developing the exposed wafer to form a resist pattern, and an etching process of the wafer using the resist pattern as a mask. By repeating these series of processes multiple times, a multi-layered patterned layer is formed on the surface of the wafer. In addition, the base material of the wafer is, for example, silicon. Further, the peripheral portion of the wafer on which the protective film is formed by the protective film forming device 11 is an area outside the device effective area in the wafer, specifically, an area outside the area where the patterned layer is formed in the wafer.

[0042] The heat treatment device 12 performs heat treatment such as heating treatment on the wafer on which the protective film is formed. Through the heating treatment of the heat treatment device 12, the solvent contained in the coating liquid for forming the protective film remaining in the protective film can be vaporized to cure the protective film.

[0043] The transfer mechanism 13 transfers wafers one by one between devices in the processing station 2b and the like.

[0044] The cleaning system 3 has a loading station 3a and a processing station 3b.

[0045] The loading station 3a loads and unloads wafers in units of carriers in the same manner as the loading station 2a.

[0046] The processing station 3b has a cleaning device 21 and a transfer mechanism 22. The cleaning device 21 processes wafers through batch processing. That is, the cleaning device 21 processes wafers in batches in which multiple wafers are grouped together.

[0047] Specifically, the cleaning device 21 removes a layer made of a material of the same type as the base material of the wafer from the wafer on which the protective film is formed through batch processing using a cleaning liquid. For example, when the base material of the wafer is silicon, the cleaning device 21 removes an amorphous silicon layer (refer to Figure 1 reference numeral PL1) through batch processing using a cleaning liquid. The amorphous silicon layer fills the holes in the patterned layer of the wafer having a multi-layered patterned layer on its surface. The cleaning liquid for removing the amorphous silicon layer is, for example, a choline aqueous solution at 80°C (choline concentration 4%).

[0048] The transfer mechanism 22 transfers wafers such as transferring wafers to the cleaning device 21 in batches within the processing station 3b.

[0049] In addition, the cleaning system 3 and the cleaning device 21 can be applied, for example, to the substrate liquid processing system and the etching processing device disclosed in Japanese Patent Application Laid-Open No. 2021-40162.

[0050] The removal system 4 has a loading station 4a and a processing station 4b.

[0051] The loading station 4a loads and unloads wafers in units of carriers in the same manner as the loading station 2a.

[0052] The processing station 4b has a removal device 31 and a transfer mechanism 32.

[0053] The removal device 31 removes the protective film from the wafer on which the protective film is formed. Specifically, the removal device 31 removes the protective film from the wafer one by one.

[0054] The transfer mechanism 32 transfers wafers such as wafers to the removal device 31 one by one within the processing station 3b.

[0055] In addition, the removal device 31 can be applied, for example, to the liquid processing device disclosed in Japanese Patent Application Laid-Open No. 2014-86639.

[0056] In addition, although not shown, the wafer processing system 1 includes an OHT (Overhead Hoist Transport) that transfers the wafers W between the systems constituting the system 1 in units of carriers.

[0057] Further, the wafer processing system 1 includes at least one control device 5. The control device 5 processes computer-executable commands that cause the wafer processing system 1 to perform various processes described in the present disclosure. The control device 5 can be configured to control each element of the wafer processing system 1 to perform various processes described herein. In one embodiment, part or all of the control device 5 may be included in the wafer processing system 1. The control device 5 may include a processing unit, a storage unit, and a communication interface. The control device 5 is implemented by a computer, for example. The processing unit can be configured to read, from the storage unit, a program that provides logic or routines capable of implementing various control actions, and perform various control actions by executing the read program. This program may be pre-stored in the storage unit or may be obtained via a medium when needed. The obtained program is stored in the storage unit and read and executed by the processing unit from the storage unit. The medium can be various computer-readable storage media or a communication line connected to the communication interface. The storage medium can be transient or non-transient. The processing unit can be a CPU (Central Processing Unit) or can be one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface can also communicate with the wafer processing system 1 via a communication line such as a LAN (Local Area Network).

[0058] <Protective film forming device 11>

[0059] Figure 3 is a schematic explanatory view showing an outline of the structure of the protective film forming device 11 when viewed from the side, Figure 4 and is a schematic explanatory view showing the outline when viewed from above. Figure 5 and Figure 6 are explanatory views showing the ejection angles of the surface-side coating nozzles described later with respect to the wafer when viewed from above and from the side, respectively.

[0060] As described above, the protective film forming device 11 forms a protective film on the peripheral portion of a wafer having a multilayer patterned layer on the surface. Specifically, the protective film is a film resistant to a cleaning liquid used in the process of removing a specific layer on the surface of the wafer W by the cleaning device 21. More specifically, it is a SoG film resistant to a choline aqueous solution (choline concentration 4%) at 80°C. Regarding the protective film forming device 11, as Figure 3 and Figure 4As shown, the protective film forming apparatus 11 includes a rotary holding chuck 111 within the processing container 100. This rotary holding chuck 111 is a rotary holding unit that holds and rotates the wafer W. Specifically, the rotary holding chuck 111 horizontally holds the wafer W by vacuum-sucking the central portion of the back surface of the wafer W, and rotates the wafer W about the vertical axis.

[0061] The rotary holding chuck 111 is connected to the chuck driving mechanism 113 via a shaft portion 112. The chuck driving mechanism 113 has a rotary driving source such as a motor (not shown) that generates a driving force for rotating the rotary holding chuck 111 about the vertical axis. By rotating the rotary holding chuck 111 by the chuck driving mechanism 113, the wafer W rotates about the vertical axis.

[0062] Also, a driving source such as a cylinder that generates a driving force for raising and lowering the rotary holding chuck 111 may be provided in the chuck driving mechanism 113. By raising and lowering the rotary holding chuck 111 by the chuck driving mechanism 113, the wafer W is raised and lowered.

[0063] The chuck driving mechanism 113 is controlled by the control device 5, for example.

[0064] A circular plate 114 is provided below the rotary holding chuck 111 so as to surround the shaft portion 112 with a gap therebetween. Three or more through holes (not shown) are formed in the circumferential direction on the circular plate 114, and respective lift pins (not shown) are freely inserted through the respective through holes. These lift pins are freely raised and lowered by a lifting mechanism (not shown). By the raising and lowering of this lifting mechanism, the lift pins can lift the wafer W that has been released from the adsorption holding by the rotary holding chuck 111 from the rotary holding chuck 111, or lower the wafer W received from the transfer mechanism 13 and place it on the rotary holding chuck 111.

[0065] A cup 120 is provided within the processing container 100 so as to be able to surround the periphery of the wafer W held by the rotary holding chuck 111. The cup 120 receives the processing liquid (e.g., coating liquid for forming the protective film) that is thrown off or dropped from the wafer W held by the rotary holding chuck 111, and guides it for discharge to the outside.

[0066] Specifically, the cup 120 has a mountain-shaped guiding portion 121 that is annularly provided with a mountain-shaped cross-sectional shape around the above-mentioned circular plate 114, and an annular vertical wall 122 is provided so as to extend downward from the outer peripheral end of the mountain-shaped guiding portion 121. The mountain-shaped guiding portion 121 guides the processing liquid that has fallen from the wafer W to the outer lower side of the wafer W.

[0067] In addition, the cup 120 has a vertical cylindrical portion 123 outside the mountain-shaped guiding portion 121 so as to surround the mountain-shaped guiding portion 121, and an upper guiding portion 124 that extends obliquely upward toward the inner side from a portion above the vertical wall 122 in the cylindrical portion 123. A plurality of opening portions 125 are provided along the circumferential direction of the upper guiding portion 124. In addition, the upper end portion of the cylindrical portion 123 extends to a position above the rotation holding disk 111, and an inclined body 123a that extends upward toward the inner side is provided at the inner edge of the end portion of the cylindrical portion 123.

[0068] A ring-shaped liquid receiving portion 126 having a concave cross-section is formed below the cylindrical portion 123 on the lower side of the mountain-shaped guiding portion 121 and the cylindrical portion 123. A drainage path 127 is connected to the outer peripheral side of the liquid receiving portion 126. In addition, two exhaust pipes 128 are provided at a position on the inner peripheral side of the liquid receiving portion 126 closer to the inner side than the drainage path 127.

[0069] In addition, as Figure 4 shown, a guide rail 130 extending in the Y direction ( Figure 4 left and right direction) is formed on the negative X direction side ( Figure 4 lower direction) of the cup 120. The guide rail 130 is located, for example, at a position from the outside of the negative Y direction side ( Figure 2 left direction) of the cup 120 to the outside of the positive Y direction side ( Figure 4 right direction). An arm 131 is provided on the guide rail 130 so as to be movable along the guide rail 130.

[0070] A surface-side coating nozzle 132 as a surface-side coating portion is supported on the arm 131. The surface-side coating portion supplies a coating liquid for forming a protective film, that is, a protective liquid (specifically, for example, a material for a SoG film, that is, a SoG material), from the surface side of the wafer W held by the rotation holding disk 111 to the surface of the wafer W. A plurality of surface-side coating nozzles 132 may be provided for one arm 131. In this case, for example, the surface-side coating nozzles 132 are provided according to each type of the protective liquid and each concentration of the protective liquid.

[0071] The surface-side coating nozzle 132 is connected to a supply mechanism 133 for the protective liquid. The supply mechanism 133 has, for example, a supply pipe 135 with one end connected to a supply source 134 of the protective liquid. A supply device group 136 for controlling the supply of the protective liquid from the supply source 134 is provided in the supply pipe 135. The supply device group 136 has, for example, a supply valve for switching the supply and the supply stop of the protective liquid, and a flow rate adjustment valve for adjusting the flow rate of the protective liquid.

[0072] The supply device group 136 is controlled by a control device 5, for example.

[0073] The arm 131 is movable along the Y direction on the guide rail 130 by the nozzle driving unit 137. Thus, the surface side coating nozzle 132 can move from the standby unit 138 provided outside the positive Y direction side of the cup 120 to above the peripheral portion of the wafer W held by the rotary holding disk 111 in the cup 120. In addition, the arm 131 is movable up and down by the nozzle driving unit 137, and thus the height of the surface side coating nozzle 132 can be adjusted. The nozzle driving unit 137 has, for example, a motor, a cylinder, etc. as a driving source for generating the driving force for moving the arm 131 along the guide rail 130 and for lifting and lowering the arm 131.

[0074] In addition, as Figure 5 shown, the ejection angle θ1 of the surface side coating nozzle 132 with respect to the wafer W in a top view is set to an acute angle, specifically, an acute angle of 10° or more, and more specifically, for example, set to 25° to 45°. Specifically, the above-mentioned ejection angle θ1 is the angle formed by the rotation direction D1 of the wafer W at the landing point W1 of the protective liquid from the surface side coating nozzle 132 on the wafer W and the ejection direction D2 of the protective liquid ejected from the surface side coating nozzle 132 in a top view.

[0075] By setting the ejection angle θ1 of the surface side coating nozzle 132 with respect to the wafer W in a top view as described above, it is difficult for the protective liquid ejected from the surface side coating nozzle 132 to move inward after reaching the surface of the wafer W, and thus the position of the inner peripheral end of the protective film on the surface side of the wafer W can be fixed in the circumferential direction of the wafer W.

[0076] In addition, by setting the ejection angle θ1 of the surface side coating nozzle 132 with respect to the wafer W in a top view as described above, the following effects are obtained. That is, in the case where a plurality of nozzles are provided on the arm 131, it is possible to suppress the contamination of the nozzles provided on the arm 131 different from the surface side coating nozzle 132 due to the protective liquid ejected from the surface side coating nozzle 132 and rebounding on the surface of the wafer W.

[0077] In addition, the surface side coating nozzle 132 is arranged so as to eject the protective liquid obliquely downward from the inside to the outside of the wafer W, so that the protective liquid landing on the wafer W from the surface side coating nozzle 132 goes to the outside of the wafer W. For example, the ejection angle (i.e., the depression angle of the surface side coating nozzle 132) θ2 of the surface side coating nozzle 132 with respect to the wafer W in a side view is set to 15° to 35°. Thereby, the impact force of the protective liquid from the surface side coating nozzle 132 on the wafer W can be weakened.

[0078] Then, return again Figure 3This will be described as follows. A cleaning nozzle 141 as a cleaning liquid supply unit is disposed on the inner circumferential side of the mountain-shaped guide portion 121. The cleaning liquid supply unit supplies a cleaning liquid from the back side of the wafer W held by the rotary holding disk 111 to the back side of the wafer W. The cleaning liquid is a solvent capable of dissolving the protective liquid. As this cleaning liquid, for example, a mixed solution of propylene glycol monomethyl ether (PGME) and propylene glycol methyl ether acetate (PGMEA) (mixing ratio: 7:3), and cyclohexane are exemplified.

[0079] The cleaning nozzle 141 is fixed, unlike the surface-side coating nozzle 132. The cleaning nozzle 141 is connected to a supply mechanism 142 for the cleaning liquid. The supply mechanism 142 has, for example, a supply pipe 144 with one end connected to a supply source 143 of the cleaning liquid. A supply device group 145 for controlling the supply of the cleaning liquid from the supply source 143 is provided in the supply pipe 144. The supply device group 145 has, for example, a supply valve for switching the supply and stop of the cleaning liquid, and a flow rate adjustment valve for adjusting the flow rate of the cleaning liquid.

[0080] The supply device group 145 is controlled by a control device 5, for example.

[0081] Further, a back-side coating nozzle 151 as a back-side coating unit is disposed outside the cleaning nozzle 141 on the inner circumferential side of the mountain-shaped guide portion 121. The back-side coating unit supplies a protective liquid from the back side of the wafer W held by the rotary holding disk 111 to the back side of the wafer W. The protective liquid supplied by the back-side coating nozzle 151 is the same as the protective liquid supplied by the surface-side coating nozzle 132.

[0082] The back-side coating nozzle 151 is fixed in the same manner as the cleaning nozzle 141. The back-side coating nozzle 151 is connected to a supply mechanism 152 for the protective liquid. The supply mechanism 152 has, for example, a supply pipe 154 with one end connected to a supply source 153 of the protective liquid. A supply device group 155 for controlling the supply of the protective liquid from the supply source 153 is provided in the supply pipe 154. The supply device group 155 has, for example, a supply valve for switching the supply and stop of the protective liquid, and a flow rate adjustment valve for adjusting the flow rate of the protective liquid.

[0083] The supply device group 155 is controlled by a control device 5, for example.

[0084] In addition, the ejection angle of at least any one of the cleaning nozzle 141 and the back-side coating nozzle 151 with respect to the wafer W in a plan view can be the same as the ejection angle of the surface-side coating nozzle 132.

[0085] Further, the ejection angle of at least any one of the cleaning nozzle 141 and the back-side coating nozzle 151 with respect to the wafer W in a side view can be the same as the ejection angle of the surface-side coating nozzle 132.

[0086] <Example of processing sequence>

[0087] Next, use Figures 7 - 9 to illustrate an example of the processing sequence executed by the wafer processing system 1. Figure 7 is a flowchart showing the main processes of the processing sequence executed by the wafer processing system 1. Figure 8 is a perspective view showing the state around the wafer W in the above processing sequence. Figure 9 is a partial enlarged cross-sectional view showing the state near the peripheral portion of the wafer W in the above processing sequence.

[0088] (Step S1: Protective film formation)

[0089] As Figure 7 shown, first, a protective film is formed on the peripheral portion of the wafer W having a plurality of patterned layers by the coating system 2.

[0090] This step S1 includes, for example, the following steps S1a to S1h.

[0091] (Step S1a: Loading of wafer W)

[0092] In step S1a, the wafer W is loaded into the coating system 2, specifically, into the protective film forming device 11.

[0093] More specifically, a carrier containing a plurality of wafers W is loaded into the loading station 2a of the coating system 2. Thereafter, the wafer W in the carrier is loaded into the processing container 100 of the protective film forming device 11 in the processing station 2b by means of a transfer mechanism 13 or the like, and is placed on the rotary holding disk 111. The placed wafer W is adsorbed and held by the rotary holding disk 111.

[0094] (Step S1b: Cup cleaning)

[0095] In step S1b, the wafer W is rotated, and a cleaning liquid is supplied from the cleaning nozzle 141 located on the back side of the wafer W to the back of the wafer W to clean the cup 120.

[0096] Specifically, the wafer W held by the rotary holding disk 111 is rotated at a predetermined rotational speed, and a cleaning liquid is supplied from the cleaning nozzle 141 toward the back of the wafer W. Thereby, the cup 120 can be cleaned with the cleaning liquid scattered from the back of the wafer W. In addition, thereby, the back of the wafer W can also be cleaned.

[0097] In addition, the cup cleaning in this step S1b can also be omitted.

[0098] (Step S1c: Supply of protective liquid from the front side)

[0099] In step S1c, the wafer W is rotated, and a protective liquid is supplied from a surface-side coating nozzle 132 located on the surface side of the wafer W to the surface of the wafer W, so as to form a protective film on the peripheral portion of the wafer W.

[0100] Specifically, for example, as shown in Figure 8 (a) thereof, after moving the surface-side coating nozzle 132 to the ejection start position Pb outside the periphery of the wafer W, the protective liquid HL is ejected from the surface-side coating nozzle 132, and the wafer W held by the rotary holding disk 111 is rotated at a predetermined rotational speed ω1. Then, while maintaining the ejection of the protective liquid HL and the rotation of the wafer W, the surface-side coating nozzle 132 is moved from the ejection start position Pb to the turning-back position Pe on the peripheral portion of the wafer W, and then returned to the ejection start position Pb.

[0101] Through this step S1c, as shown in Figure 9 (a) thereof, a protective film F is formed on the peripheral portion of the wafer W including the inclined surface portion Wb. The inclined surface portion Wb is composed of an inclined portion Wb1 on the surface side, an inclined portion Wb2 on the back side, and a side end surface (i.e., a peripheral end surface) Wb3. Through this step S1, specifically, the protective film F is formed in such a manner as to cover the surface-side horizontal plane Wf, the back-side horizontal plane Wr, the inclined portion Wb1 on the surface side, the inclined portion Wb2 on the back side, and the side end surface Wb3 of the peripheral portion of the wafer W entirely.

[0102] The rotational speed ω1 of the wafer W in this step S1c is lower than the rotational speeds of the wafer W in step S1e (cleaning the back side and the peripheral end surface) and step S1f (supplying the protective liquid from the back side), for example, 50 rpm to 500 rpm, preferably 150 rpm to 200 rpm. By setting the rotational speed ω1 low in this way, even if a stepped portion is generated on the surface side of the peripheral portion of the wafer W when forming the patterned layer, the edge portion of the stepped portion can be covered with the protective film F.

[0103] In addition, in this step S1c, the surface-side coating nozzle 132 is only moved to a position outside the protective film formation position set for the surface side of the wafer W. Thereby, it is possible to suppress the protective liquid from the surface-side coating nozzle 132 from reaching the area inside the protective film formation position in the surface of the wafer W. In particular, in this step S1c, as described above, the rotational speed of the wafer W is low, so the centrifugal force of the protective liquid acting on the wafer W is weak, and the protective liquid from the surface-side coating nozzle 132 easily moves inward. Therefore, it is effective to limit the inward movement position of the surface-side coating nozzle 132 as described above.

[0104] In addition, on the surface of the wafer W, the protective film formation position is set at a position outside the area where the patterned layer is formed.

[0105] Set the ejection time of the protective liquid HL ejected from the surface-side coating nozzle 132 and the moving speed of the surface-side coating nozzle 132 in this step S1c to be fixed, for example, regardless of the formation width of the protective film. Thus, the setting of the processing conditions for forming the protective film can be made simple. In addition, when set to be fixed as described above, for example, by extending the ejection time at the ejection start position Pb, the supply time of the protective liquid to the peripheral portion of the wafer W can be shortened to narrow the formation width of the protective film. Additionally, by shortening the ejection time at the ejection start position Pb, the supply time of the protective liquid to the peripheral portion of the wafer W can be extended to widen the formation width of the protective film.

[0106] (Step S1d: Drying of the protective film)

[0107] In step S1d, the wafer W is rotated without supplying the protective liquid to the wafer W to dry the protective film F formed in step S1c.

[0108] Specifically, the wafer W held by the rotary holding chuck 111 is continuously rotated for a prescribed time without supplying the protective liquid or the cleaning liquid to the wafer W.

[0109] In this step S1d, the rotation speed of the wafer W can be increased as time passes.

[0110] Specifically, the rotation speed of the wafer W can be increased stepwise. More specifically, for example, the rotation speed of the wafer W can be increased from 150 rpm to 1500 rpm at a rate of increasing 100 rpm every few seconds.

[0111] Alternatively, the rotation speed of the wafer W can be increased at a relatively low fixed acceleration (e.g., 100 rpm / s).

[0112] By adjusting the rotation speed in this way, the protective film F can be dried while maintaining the thickness of the protective film F, especially the thickness of the protective film F covering the surface side of the peripheral portion of the wafer W. That is, it is possible to suppress the step portion formed on the surface side of the peripheral portion of the wafer W from being exposed from the protective film F in this step S1.

[0113] In addition, in this step S1d, after the wafer W is rotated at a low rotation speed (e.g., 150 rpm to 200 rpm) for a long time, it can also be rotated at a high rotation speed (e.g., 1500 rpm) for a short time. Thus, the protective film F can also be dried while maintaining its thickness.

[0114] (Step S1e: Cleaning of the back surface and the peripheral end surface)

[0115] In step S1e, the wafer W formed with the protective film F is rotated, and a cleaning liquid is supplied from the cleaning nozzle 141 located on the back side of the wafer W to the back side of the wafer W to clean the back side and the peripheral end face of the wafer W.

[0116] Specifically, the wafer W held by the rotary holding plate 111 is rotated at a predetermined rotational speed ω2, and as Figure 8 shown in (b) of, the cleaning liquid CL is supplied from the cleaning nozzle 141 toward the back side of the wafer W. Thus, as Figure 9 shown in (b) of, the entire portion of the protective film F covering the back side horizontal plane Wr, the back side inclined portion Wb2, and the side end face Wb3 of the peripheral portion of the wafer W is removed. In addition, when droplets of the protective liquid supplied to the surface of the wafer W in the above step S1c or lumps of the protective liquid adhere to the back side of the wafer W, these droplets and lumps of the protective liquid are also removed by the cleaning liquid supplied in this step S1e. Furthermore, the reason why the portion of the protective film F covering the inclined portion Wb1 on the surface side of the wafer W is not removed in this step 1e is that it is difficult to cover the entire inclined portion Wb1 on the surface side of the wafer W with the protective film F in the subsequent step S1f. However, when it is possible to cover the lower portion of the inclined portion Wb1 on the surface side of the wafer W with the protective film F in the subsequent step S1f, the lower portion of the portion of the protective film F covering the inclined portion Wb1 on the surface side of the wafer W may also be removed in this step S1e.

[0117] The rotational speed ω2 of the wafer W in this step S1e is higher than the rotational speed of the wafer W in step S1c (supplying the protective liquid from the surface side) and step S1f (supplying the protective liquid from the back side), for example, 2000 rpm or more, specifically 2000 rpm. By setting the rotational speed ω2 high in this way, it is possible to prevent the portion of the surface side horizontal plane Wf of the peripheral portion of the wafer W where the protective film F is formed thickly from being removed by the cleaning liquid.

[0118] Alternatively, after this step S1e and before step S1f (supplying the protective liquid from the back side), a process of rotating the wafer W to remove the cleaning liquid to dry the wafer W may be performed in a state where no cleaning liquid is supplied to the wafer W.

[0119] (Step S1f: Supplying the protective liquid from the back side)

[0120] In step S1f, the wafer W is rotated, and a protective liquid is supplied from the back side coating nozzle 151 located on the back side of the wafer W to the back side of the wafer W to form the protective film F on the back side and the peripheral end face of the peripheral portion of the wafer W.

[0121] Specifically, the wafer W held by the rotary holding plate 111 is rotated at a predetermined rotational speed ω3, and asFigure 8 As shown in (c) thereof, the protective liquid HL is supplied from the backside coating nozzle 151 toward the backside of the wafer W. Thus, as Figure 9 shown in (c) thereof, the protective film F is formed at least on the portion of the peripheral edge of the wafer W that is exposed from the protective film F through step S1e. Specifically, through this step S1f, the protective film F is formed so as to cover the entire backside horizontal plane Wr, the backside inclined portion Wb2, and the side end surface Wb3 of the peripheral edge of the wafer W.

[0122] The position on the backside of the wafer W where the protective liquid is supplied by the backside coating nozzle 151 in this step S1f is a position outside the position on the backside of the wafer W where the cleaning liquid is supplied by the cleaning nozzle 141 in step S1e. That is, on the backside of the wafer W, the position where the cleaning liquid is supplied is closer to the inside than the position where the protective liquid is supplied. Thus, the area on the backside of the wafer W where the protective film is to be formed can be reliably cleaned with the cleaning liquid.

[0123] In addition, the rotation speed ω3 of the wafer W in this step S1f is higher than the rotation speed ω1 of the wafer W in step S1c (supply of the protective liquid from the front side) and lower than the rotation speed ω2 of the wafer W in step S1e (cleaning of the backside and the peripheral end surface), for example, 750 rpm to 1750 rpm, preferably 1250 rpm to 1500 rpm. According to the results of experiments conducted by the inventors of the present invention, by setting the rotation speed ω3 to 1750 rpm or less, the protective film F can be formed up to the above-mentioned position in the peripheral edge of the wafer W, and by setting the rotation speed ω3 to 750 rpm or more, the inner peripheral end position of the protective film F on the backside of the wafer W can be fixed in the circumferential direction of the wafer.

[0124] It is also possible to perform a process of rotating the wafer W without supplying the protective liquid to dry the protective film F formed in step S1f after this step S1f and before step S1g (heat treatment).

[0125] (Step S1g: Heat treatment)

[0126] After step S1f, a heat treatment is performed on the wafer W.

[0127] Specifically, the wafer W is transported from the protective film forming device 11 to the heat treatment device 12 within the processing station 2b by the transport mechanism 13. Thereafter, the wafer W is subjected to a heat treatment by the heat treatment device 12 to cure the protective film on the wafer W.

[0128] (Step S1h: Removal of the wafer W)

[0129] In step S1h, the wafer W is removed from the coating system 2.

[0130] Specifically, by means of a transfer mechanism 13 or the like, the wafer W is returned from the heat treatment apparatus 12 in the processing station 2b to the original carrier in the loading station 2a.

[0131] Step S1 including steps S1a to S1h is performed on all the wafers W in the carrier.

[0132] (Step S2: Removal by batch processing using a cleaning liquid)

[0133] After step S1, the cleaning system 3 removes, by batch processing using a cleaning liquid, the layer made of a material of the same type as the substrate of the wafer W from the wafer W on which the protective film is formed.

[0134] Specifically, the carrier accommodating the wafer W on which the protective film is formed is carried into the loading station 3a of the cleaning system 3. Then, by means of a transfer mechanism 22 or the like, the wafers W in the carrier are carried into the cleaning apparatus 21 in the processing station 3b in batches. Then, in the cleaning apparatus 21, the amorphous silicon layer of the wafer W is removed in batches using a cleaning liquid (refer to Figure 1 reference numeral PL1). After that, by means of a transfer mechanism 22 or the like, the wafer W is returned to the original carrier in the loading station 3a.

[0135] Step S2 is performed on all the wafers W in the carrier.

[0136] (Step S3: Removal of the protective film)

[0137] After step S2, the protective film F is removed from the wafer W on which the protective film F is formed by using a removal system 4.

[0138] Specifically, the carrier accommodating the wafer W after step S2 is carried into the loading station 4a of the removal system 4. Then, by means of a transfer mechanism 32 or the like, the wafers W in the carrier are carried into the removal apparatus 31 in the processing station 4b. Then, in the removal apparatus 31, the protective film F is removed from the peripheral portion of the wafer W. After that, by means of a transfer mechanism 32 or the like, the wafer W is returned to the original carrier in the loading station 4a.

[0139] Step S3 is performed on all the wafers W in the carrier.

[0140] Thus, the processing sequence of this example is completed.

[0141] <Main effects of this embodiment>

[0142] As described above, the method for forming a protective film according to the present embodiment includes step S1c (first protective film forming step), in which while rotating the wafer W, a protective liquid is supplied from the surface side coating nozzle 132 located on the surface side of the wafer W to the surface of the wafer W to form a protective film on the peripheral portion of the wafer W. In addition, the method for forming a protective film according to the present embodiment includes step S1e (cleaning step) after step S1c (first protective film forming step). In step S1e (cleaning step), while rotating the wafer W, a coating liquid is supplied from the cleaning nozzle 141 located on the back side of the wafer W to the back side of the wafer W to clean the back side and the peripheral end surface of the wafer W. And the method for forming a protective film according to the present embodiment includes step S1f (second protective film forming step) after step S1e (cleaning step). In step S1f (second protective film forming step), while rotating the wafer W, a protective liquid is supplied from the back side coating nozzle 151 located on the back side of the wafer W to the surface of the wafer W to form a protective film on the back side and the peripheral end surface of the peripheral portion of the wafer W.

[0143] As a method for forming a protective film different from the method for forming a protective film according to the present embodiment (hereinafter referred to as the method for forming a protective film according to the comparative method), there is a method including the following steps X1 and X2.

[0144] Step X1 is a step of forming a protective film from the back side to the side end surface of the peripheral portion of the wafer W by supplying a protective liquid from the back side coating nozzle 151 located on the back side of the wafer W while rotating the wafer W. Through this step, for example, as shown in (a) of Figure 10 , a protective film F is formed so as to cover the entire back side horizontal plane Wr, the back side inclined portion Wb2, and the side end surface Wb3 of the peripheral portion of the wafer W.

[0145] Step X2 is a step of forming a protective film on the surface side of the peripheral portion of the wafer W by supplying a protective liquid from the surface side coating nozzle 132 located on the surface side of the wafer W while rotating the wafer W after step X1. Through this step, for example, as shown in (b) of Figure 10 , a protective film F is formed so as to cover the entire surface side horizontal plane Wf and the surface side inclined portion Wb1 of the peripheral portion of the wafer W that are not covered in step X1.

[0146] When a stepped portion is formed on the surface of the peripheral portion of the wafer W, it is necessary to set the rotation speed of the wafer W low both in step S1c (first protective film forming step) of the method for forming a protective film according to the present embodiment and in step X2 of the method for forming a protective film according to the comparative method.

[0147] Also, when the rotation speed of the wafer W is set low in step X2 of the method for forming a protective film as a comparative method, coating defects of the protective film sometimes occur on the back surface of the wafer W. For example, sometimes protrusions caused by lumps of the protective liquid are generated on the protective film on the back surface of the peripheral portion of the wafer W, or droplets of the protective liquid adhere to the protective film near the notch (not shown) on the back surface of the peripheral portion of the wafer W.

[0148] In contrast, in the method for forming a protective film according to the present embodiment, when the rotation speed of the wafer W is set low in step S1c (first protective film forming process), even if droplets or lumps of the protective liquid adhere to the back surface of the peripheral portion of the wafer W, they can be removed in step S1e (cleaning process). Then, in step S1f (second protective film forming process) after step S1e (cleaning process), a protective film is re-formed on the back surface of the peripheral portion of the wafer W and the like. Therefore, coating defects of the protective film do not occur on the back surface of the wafer W as in the method for forming a protective film as a comparative method. That is, according to the present embodiment, a protective film can be appropriately formed on the peripheral portion of the wafer W.

[0149] In addition, as another method for forming a protective film on the peripheral portion of the wafer W, there is a method based on the CVD method. However, when forming a protective film on the peripheral portion of the wafer W by the CVD method, it is difficult to fill the recesses in the stepped portions on the surface constituting the peripheral portion, and it is difficult to form the protective film itself on the back surface of the peripheral portion.

[0150] Further, in the method for forming a protective film according to the present embodiment, when a protective film is formed on the peripheral portion of the wafer W, a multilayer patterned layer has already been formed. Therefore, there is no case where the protective film affects the formation of the patterned layer as in the case where a multilayer patterned layer is formed after the formation of the protective film. This is the same even when the protective film is thick.

[0151] In addition, in the case of forming a protective film by supplying a protective liquid from the surface side of the wafer W, such as in step S1c (the first protective film forming process) of the protective film forming method according to the present embodiment, and step X2 of the protective film forming method according to a comparative method, the portion of the protective film covering the inclined portion Wb2 on the back side of the wafer W tends to become thicker than other portions due to gravity or the like. In particular, in the protective film forming method according to the comparative method, after forming a protective film so as to cover the inclined portion Wb2 on the back side of the wafer W in step X1, the protective liquid supplied from the surface side of the wafer W in step X2 is supplied to the inclined portion Wb2, so that the portion of the protective film covering the inclined portion Wb2 on the back side of the wafer W becomes thick. When the protective film is too thick, during the heat treatment after forming the protective film, the thick portion of the protective film will separate from the wafer W (i.e., film floating occurs), or cracks will occur in the thick portion of the protective film. In the protective film forming method according to the comparative method, the portion of the protective film covering the inclined portion Wb2 on the back side of the wafer W remains thick. In contrast, in step S1c (the first protective film forming process) of the protective film forming method according to the present embodiment, even if the portion of the protective film covering the inclined portion Wb2 on the back side of the wafer W becomes thick, this portion will be temporarily removed in step S1e (the cleaning process). Then, in a subsequent step S1f (the second protective film forming process), a protective film covering the inclined portion Wb2 on the back side of the wafer W is formed by supplying a protective liquid to the back side of the wafer W. Therefore, it is possible to suppress the portion of the protective film covering the inclined portion Wb2 on the back side of the wafer W from becoming thick.

[0152] According to the experiments of the inventors of the present invention, in the protective film forming method according to the comparative method, the portion of the protective film covering the inclined portion Wb2 on the back side of the wafer W is about 2.5 to 5 times thicker than other portions. In contrast, according to the protective film forming method according to the present embodiment, it is possible to make the thickness of the portion of the protective film covering the inclined portion Wb2 on the back side of the wafer W substantially the same as or thinner than other portions.

[0153] In addition, in the present embodiment, the cup cleaning process as step S1b may also be omitted. In this case, the cup 120 can also be cleaned with the cleaning liquid in the cleaning process of the back side and the peripheral end surface in step S1e. That is, the cleaning process of the back side and the peripheral end surface in step S1e can also serve as the cleaning process of the cup 120. Thereby, it is possible to improve the productivity of the protective film forming sequence including the cleaning of the cup 120, and in addition, it is also possible to reduce the consumption of the cleaning liquid.

[0154] <Another example of the ejection time of the protective liquid ejected from the surface side coating nozzle 132>

[0155] In the above example, the ejection time of the protective liquid ejected from the surface-side coating nozzle 132 in step S1c is independent of the formation width of the protective film, that is, the ejection time is set to be fixed regardless of the coating width of the protective liquid coated from the surface-side coating nozzle 132 onto the wafer W.

[0156] Instead, the ejection time of the above-mentioned protective liquid can also be changed and set according to the coating width of the protective liquid coated from the surface-side coating nozzle 132 onto the wafer W. For example, the control device 5 performs this change based on the correlation data between the coating width and the ejection time obtained and stored in the storage unit in advance, and the set coating width.

[0157] Thereby, the time for supplying the protective liquid from the surface-side coating nozzle 132 to the outer side of the peripheral edge of the wafer W can be shortened, and thus the attachment of the above-mentioned protective liquid to the mountain-shaped guide portion 121 can be suppressed.

[0158] <Another example of the arrangement number and position of the back-side coating nozzle 151 and the cleaning nozzle 141>

[0159] Figure 11 FIG. is a view showing another example of the arrangement number and position of the back-side coating nozzle 151 and the cleaning nozzle 141.

[0160] As Figure 11 shown, a plurality of back-side coating nozzles 151 (two in the example of the figure) can also be provided. In the Figure 11 example, the two back-side coating nozzles 151 are provided at positions facing each other with the rotation holding disk 111 interposed therebetween in a plan view.

[0161] In addition, the back-side coating nozzle 151 can also be provided at a position upstream of the supply position of the protective liquid from the surface-side coating nozzle 132 in the rotation direction of the wafer W. Thereby, contamination of the above-mentioned back-side coating nozzle 151 by the protective liquid from the surface-side coating nozzle 132 can be suppressed.

[0162] Furthermore, the back-side coating nozzle 151 located at a position downstream of the supply position of the protective liquid from the surface-side coating nozzle 132 in the rotation direction of the wafer W can also be provided at a position deviated by more than 90° from the supply position of the protective liquid from the surface-side coating nozzle 132 in the rotation direction of the wafer W. Thereby, contamination of the above-mentioned back-side coating nozzle 151 by the protective liquid from the surface-side coating nozzle 132 can also be suppressed.

[0163] Similarly to the backside coating nozzle 151, a plurality of cleaning nozzles 141 may also be provided. Further, the cleaning nozzles 141 may be provided at a position upstream of the supply position of the protective liquid from the surface-side coating nozzle 132 in the rotation direction of the wafer W. The cleaning nozzle 141 located at a position downstream of the supply position of the protective liquid from the surface-side coating nozzle 132 in the rotation direction of the wafer W may also be provided at a position deviated by 90° or more from the supply position of the protective liquid from the surface-side coating nozzle 132 in the rotation direction of the wafer W.

[0164] <Another example of the backside coating nozzle 151>

[0165] Figures 12 - 14 These are diagrams showing another example of the backside coating nozzle 151.

[0166] Figure 12 The backside coating nozzle 151 has a nozzle head 500, and a protective liquid ejection port 500a and a solvent ejection port 500b are provided in the nozzle head 500.

[0167] The protective liquid ejection port 500a is an example of a coating liquid ejection port that ejects a coating liquid for forming a protective film, that is, a protective liquid.

[0168] The solvent ejection port 500b is provided separately from the protective liquid ejection port 500a and is used to eject a solvent. As the solvent, for example, the same treatment liquid as the cleaning liquid ejected from the cleaning nozzle 141 is used.

[0169] For example, the nozzle head 500 has a vertical surface 501, and the protective liquid ejection port 500a is formed in the vertical surface 501. Further, the nozzle head 500 has a ejection surface 502 that extends perpendicularly from the vertical surface 501 in the ejection direction of the protective liquid ejected from the protective liquid ejection port 500a, and the solvent ejection port 500b is formed in the upper part of the ejection surface 502. The solvent ejection port 500b ejects the solvent toward the vertical surface 501. Specifically, the solvent ejection port 500b ejects the solvent toward the portion of the vertical surface 501 where the protective liquid ejection port 500a is formed, that is, the ejection angle of the solvent ejected from the solvent ejection port 500b causes the solvent to directly hit the protective liquid ejection port 500a. Therefore, the protective liquid ejection port 500a and its periphery can be cleaned more reliably. In addition, the solvent ejection port 500b is larger than the protective liquid ejection port 500a. Therefore, a large amount of solvent can be ejected from the solvent ejection port 500b, and thus the protective liquid ejection port 500a and its periphery can be made clean in a short time.

[0170] The solvent ejection port 500b is formed in a portion of the ejection surface 502 that is closer to the rotation holding disk 111, i.e., the inner side, than the protective liquid ejection port 500a. The ejection surface 502 may also be inclined downward as it goes from the inner side to the outer side. Thereby, the solvent or the like that is ejected from the solvent ejection port 500b, collides with the vertical surface 501, and reaches the ejection surface 502 can flow downward along the ejection surface 502 toward the outer side, and then be discharged from the nozzle head 500.

[0171] The protective liquid ejection port 500a is connected to the above-described protective liquid supply mechanism 133 via a flow path (not shown) for the protective liquid provided in the nozzle head 500.

[0172] In addition, the solvent ejection port 500b is connected to a solvent supply mechanism (not shown) via a flow path (not shown) for the solvent provided in the nozzle head 500. The solvent supply mechanism has, for example, a supply pipe with one end connected to the solvent supply source. A supply device group for controlling the supply of the solvent from the solvent supply source is provided on the supply pipe. The supply device group has, for example, a supply valve for switching the supply and stop of the solvent and a flow rate adjustment valve for adjusting the flow rate of the solvent. The supply device group of the solvent supply mechanism is controlled by, for example, the control device 5.

[0173] When using Figure 12 the backside coating nozzle 151, a step of cleaning the protective liquid ejection port 500a with the solvent from the solvent ejection port 500b is performed. Specifically, a step of cleaning the protective liquid ejection port 500a with the solvent ejected from the solvent ejection port 500b toward the vertical surface 501 is performed. In this cleaning step of the protective liquid ejection port 500a, the protective liquid can be informally ejected from the protective liquid ejection port 500a while cleaning with the solvent ejected from the solvent ejection port 500b. Thereby, the solidified protective liquid can be removed when the protective liquid ejection port 500a is blocked due to the solidification of the protective liquid, and in addition, the entry of the solvent into the protective liquid ejection port 500a can be suppressed.

[0174] After the wafer W that has undergone steps S1a to S1g of step S1 is removed from the rotary holding plate 111, a cleaning process for the protective liquid ejection port 500a is performed. This is because when the solvent is ejected from the solvent ejection port 500b while the wafer W with a protective film formed on the back surface thereof is in a state on the rotary holding plate 111, sometimes the solvent may come into contact with the protective film on the back surface of the wafer W and form irregularities on the protective film. In addition, when the protective liquid is also ejected while the solvent is being ejected, sometimes the protective liquid may newly come into contact with the protective film on the back surface of the wafer W and form irregularities or cause film thickness non-uniformity. In other words, by performing the above-described cleaning process for the protective liquid ejection port 500a in a state where the wafer W has been removed from the rotary holding plate 111, that is, in a state where the wafer W is not on the rotary holding plate 111, it is possible to suppress the formation of irregularities caused by the solvent or the protective liquid on the protective film on the back surface of the wafer W, or the occurrence of film thickness non-uniformity on the protective film on the back surface of the wafer W.

[0175] Specifically, the cleaning process for the protective liquid ejection port 500a is performed from the time when the wafer W that has undergone steps S1a to S1g of step S1 is removed from the rotary holding plate 111 until before step S1e (cleaning the back surface and the peripheral end surface) of step S1 for the next wafer W. Therefore, it is also possible to perform the cleaning process for the protective liquid ejection port 500a in parallel with step S1c (supplying the protective liquid from the front surface side) of step S1 for the next wafer W after the wafer W that has undergone steps S1a to S1g of step S1 is removed from the rotary holding plate 111.

[0176] In addition, for example, after every n wafers W (n is an integer of 1 or more) are processed, the above-described cleaning process for the protective liquid ejection port 500a is performed in a state where the wafer W has been removed from the rotary holding plate 111, that is, in a state where the wafer W is not on the rotary holding plate 111.

[0177] Moreover, it is also possible to perform the above-described cleaning process for the protective liquid ejection port 500a in a state where the wafer W is not on the rotary holding plate 111 before and after steps S1a to S1g of step S1 are performed for a plurality of wafers W belonging to the same batch.

[0178] Figure 13 The backside coating nozzle 151 has a nozzle head 600. A protective liquid ejection port 500a and a solvent ejection port 500b are provided at a portion 610 on the outer side, which is the side opposite to the side closer to the rotary holding plate 111, of the nozzle head 600. In addition, a connection port 600a for connecting a supply pipe for the protective liquid and a connection port 600b for connecting a supply pipe for the solvent are provided at a portion 620 on the inner side, which is the side closer to the rotary holding plate 111, of the nozzle head 600.

[0179] The nozzle head 600 has a notch 611 at a portion on the downstream side of the ejection direction of the protective liquid ejected from the protective liquid ejection port 500a in the outer portion 610. The protective liquid from the protective liquid ejection port 500a can reach this portion, but the solvent ejected from the solvent ejection port 500b (specifically, the solvent ejected from the solvent ejection port 500b and rebounded by the vertical surface 501) is difficult to reach. Therefore, it is possible that the protective liquid remains in this portion. By providing the notch 611, this situation can be suppressed.

[0180] In addition, in the nozzle head 600, the surface 612 extending from below the protective liquid ejection port 500a in the protective liquid ejection direction is an inclined surface leading downward in the protective liquid ejection direction. Therefore, even if the protective liquid waits to fall on the surface 612 when the ejection of the protective liquid from the protective liquid ejection port 500a stops, the protective liquid can be guided along the surface 612, which is an inclined surface, outside the nozzle head 600. In addition, the solvent ejected from the solvent ejection port 500b and rebounded by the vertical surface 501 can flow along the surface 612. Thus, it is possible to suppress the remaining of the protective liquid on the surface 612.

[0181] Moreover, the protective liquid that has reached the lower surface of the nozzle head 600 through the surface 612 etc. can also be removed by the solvent that has reached the lower surface of the nozzle head 600 through the surface 612 in the same way.

[0182] In the nozzle head 600, a part of the solvent ejected from the solvent ejection port 500b and reaching the vertical surface 501 flows along the surface 612 after being rebounded by the vertical surface 501 as described above, but another part flows downward along the outer end surface 613 of the nozzle head 600 after reaching the vertical surface 501. Using the solvent flowing downward along the outer end surface 613 of the nozzle head 600, the protective liquid attached to the lower surface of the nozzle head 600 can also be removed.

[0183] In addition, in the example of the drawings, the surface 612 extends from the lower end of the vertical surface 501 provided with the protective liquid ejection port 500a to the lower end of the nozzle head 600 along the protective liquid ejection direction, and is formed as the inclined surface as described above until the outer end of the nozzle head 600.

[0184] Figure 14 The backside coating nozzle 151 has a nozzle head 700. The protective liquid ejection port 500a and the solvent ejection port 500b are provided at a portion on the outer side of the nozzle head 700, which is the side opposite to the side close to the rotation holding disk 111.

[0185] The nozzle head 700 is Figure 13 the same as the nozzle head 600 of

[0186] In addition, the nozzle head 700 has a wall portion 711 that extends from a portion of the vertical surface 501 provided with the protective liquid ejection port 500a, which is downstream of the protective liquid ejection port 500a in the ejection direction of the solvent ejected from the solvent ejection port 500b, in a manner facing the solvent ejection port 500b. Therefore, the wall portion 711 can intercept the solvent ejected from the solvent ejection port 500b and rebounded by the vertical surface 501, and thus the intercepted solvent can flow in the protective liquid ejection direction at a portion 712 that extends downward from the lower side of the protective liquid ejection port 500a in the protective liquid ejection direction. Thus, even when the protective liquid lands on the portion 712 when the ejection of the protective liquid from the protective liquid ejection port 500a is stopped, the protective liquid can be removed by the solvent.

[0187] Moreover, the protective liquid that has reached the lower surface of the nozzle head 700 through the portion 712 and the side surface 713 on the downstream side in the protective liquid ejection direction can also be removed by the solvent that has reached the lower surface of the nozzle head 700 through the portion 712 and the side surface 713 in the same manner.

[0188] In the nozzle head 700, a part of the solvent ejected from the solvent ejection port 500b and reaching the vertical surface 501 flows along the portion 712 after being blocked by the wall portion 711, but another part crosses the wall portion 711 and flows downward along the outer side surface 711a of the wall portion 711. The protective liquid attached to the lower surface of the nozzle head 700 can also be removed by the solvent flowing downward along the outer side surface 711a of the wall portion 711.

[0189] In addition, in the example of the figure, the wall portion 711 is formed to extend in the vertical direction from the outer end of the vertical surface 501 provided with the protective liquid ejection port 500a and to extend upward in the vertical direction from the outer end of the ejection surface 502.

[0190] In addition, the above-mentioned portion 712 may also be formed by an inclined surface such as the surface 612 of the nozzle head 600 as Figure 13 shown.

[0191] (Second Embodiment)

[0192] <Protective Film Forming Apparatus>

[0193] Figure 15 is a schematic explanatory view showing an outline of the structure of the protective film forming apparatus according to the second embodiment when viewed from the side, Figure 16 is a schematic explanatory view showing the outline when viewed from above.

[0194] Figure 15 and Figure 16The protective film forming apparatus 11 supports, on the arm 131, not only the surface-side coating nozzle 132 but also the surface-side cleaning nozzle 161 which serves as a surface-side cleaning liquid supply unit. The surface-side cleaning liquid supply unit supplies a cleaning liquid from the surface side of the wafer W held by the rotary holding disk 111. Specifically, the cleaning liquid is supplied from the surface side of the wafer W to a position outside the periphery of the wafer W.

[0195] The surface-side cleaning nozzle 161 and the surface-side coating nozzle 132 are arranged so as to be aligned along the extending direction (Y direction) of the guide rail 130, which is the moving direction of the surface-side coating nozzle 132.

[0196] The cleaning liquid supplied by the surface-side cleaning nozzle 161 and the cleaning nozzle 141 is the same. The surface-side cleaning nozzle 161 is connected to the cleaning liquid supply mechanism 162. The supply mechanism 162 has, for example, a supply pipe 164 with one end connected to the cleaning liquid supply source 163. A supply device group 165 for controlling the supply of the cleaning liquid from the supply source 163 is provided in the supply pipe 164. The supply device group 165 has, for example, a supply valve for switching the supply and stop of the cleaning liquid and a flow rate adjustment valve for adjusting the flow rate of the cleaning liquid.

[0197] The supply device group 165 is controlled by the control device 5, for example.

[0198] In addition, the ejection angle of the surface-side cleaning nozzle 161 in a plan view is set to be the same as the ejection angle of the surface-side coating nozzle 132 in the plan view. Similarly, the ejection angle (i.e., the depression angle) of the surface-side cleaning nozzle 161 in a side view is set to be the same as the ejection angle of the surface-side coating nozzle 132 in the side view.

[0199] When using Figure 15 and Figure 16 the protective film forming apparatus 11, a step of cleaning the cup 120 to which the protective liquid is attached with the cleaning liquid from the surface-side cleaning nozzle 161 is performed. Specifically, in step S1c (the first protective film forming step), a step of cleaning the mountain-shaped guiding portion 121 to which the protective liquid supplied from the surface-side coating nozzle 132 to the outside of the periphery of the wafer W is attached with the cleaning liquid from the surface-side cleaning nozzle 161 is performed.

[0200] The cleaning step of the cup 120 (the mountain-shaped guiding portion 121) is performed, for example, during the cleaning step of the back surface and the peripheral end surface in step S1e. In addition, the cleaning step of the mountain-shaped guiding portion 121 may be performed during the protective film drying step in step S1d.

[0201] In the cleaning process of the mountain-shaped guiding portion 121, specifically, for example, after the surface-side cleaning nozzle 161 moves to the above-described ejection start position Pb outside the periphery of the wafer W, while maintaining the position of the surface-side cleaning nozzle 161 fixed at the ejection start position Pb, the cleaning liquid is continuously ejected from the surface-side cleaning nozzle 161 for the entire specified time. As long as the cleaning liquid from the surface-side cleaning nozzle 161 in the state of moving to the ejection start position Pb does not hit the wafer W held by the rotary holding disk 111, a part of the nozzle 161 may also overlap the above-described wafer W in a plan view.

[0202] By cleaning the mountain-shaped guiding portion 121 as described above, it is possible to suppress the adverse effect of the protective liquid attached to the mountain-shaped guiding portion 121 on the processing of the wafer in the protective film forming apparatus 11.

[0203] In addition, by setting the ejection angles of the surface-side cleaning nozzle 161 in a plan view and a side view to be the same as the ejection angles of the surface-side coating nozzle 132 in a plan view and a side view, it is possible to more reliably remove the protective liquid ejected from the surface-side coating nozzle 132 and attached to the mountain-shaped guiding portion 121 by the cleaning liquid from the surface-side cleaning nozzle 161.

[0204] <Modification Example>

[0205] In the above example, the protective film forming apparatus 11 is provided in the coating system 2 different from the coating and developing apparatus connected to the exposure apparatus, but the protective film forming apparatus 11 may also be provided in the coating and developing apparatus. That is, the protective film may be formed on the peripheral portion of the wafer W as described above by the protective film forming apparatus 11 provided in the coating and developing apparatus.

[0206] It should be considered that the embodiments disclosed herein are illustrative in all aspects and not restrictive. The above embodiments may be omitted, replaced, or changed in various ways without departing from the appended claims and their gist. For example, the constituent elements of the above embodiments can be arbitrarily combined. According to such an arbitrary combination, of course, the functions and effects of the constituent elements involved in the combination can be obtained, and other functions and other effects obvious to those skilled in the art from the description of this specification can also be obtained.

[0207] In addition, the effects described in this specification are merely illustrative or exemplary effects and are not limited thereto. That is, the technology related to the present disclosure can achieve other effects obvious to those skilled in the art from the description of this specification at the same time as or instead of the above effects.

[0208] In addition, the following structures also fall within the protection scope of the present disclosure.

[0209] (1) A method for forming a protective film, which is used to form a protective film on the peripheral portion of a substrate, and the substrate has a multi-layer patterned layer on its surface. The method for forming the protective film includes:

[0210] Step (A): While rotating the substrate, a coating liquid for forming the protective film is supplied from a surface-side coating part located on the surface side of the substrate to the surface of the substrate, so as to form the protective film on the peripheral portion of the substrate;

[0211] Step (B): After step (A), while rotating the substrate, a cleaning liquid is supplied from a cleaning liquid supply part located on the back side of the substrate to the back of the substrate, so as to clean the back and the peripheral end face of the substrate; and

[0212] Step (C): After step (B), while rotating the substrate, the coating liquid is supplied from a back-side coating part located on the back side of the substrate to the back of the substrate, so as to form the protective film on the back and the peripheral end face of the peripheral portion of the substrate.

[0213] (2) The method for forming a protective film according to (1) above, wherein

[0214] The position on the back of the substrate where the cleaning liquid is supplied by the cleaning liquid supply part in step (B) is closer to the inside than the position on the back of the substrate where the coating liquid is supplied by the back-side coating part in step (C).

[0215] (3) The method for forming a protective film according to (1) or (2) above, wherein

[0216] The rotational speed of the substrate in step (A), the rotational speed in step (C), and the rotational speed in step (B) increase in this order from low to high.

[0217] (4) The method for forming a protective film according to any one of (1) to (3) above, wherein

[0218] In step (A), when supplying the coating liquid, the surface-side coating part is moved from the outside of the peripheral edge of the substrate onto the peripheral portion of the substrate, and then moved from the peripheral portion of the substrate to the outside of the peripheral edge of the substrate.

[0219] (5) The method for forming a protective film according to any one of (1) to (4) above, wherein

[0220] After the step (A) and before the step (B), a step (D) is further included, in which the substrate is rotated in a state where the coating liquid is not supplied to the substrate to dry the protective film.

[0221] The rotation speed of the substrate in the step (D) is increased step by step.

[0222] (6) The method for forming a protective film according to any one of (1) to (5) above, wherein

[0223] In the step (D), the cleaning liquid is supplied from the surface-side cleaning liquid supply portion located on the surface side of the substrate to a position outside the periphery of the substrate to clean the cup for receiving the processing liquid dropped from the substrate.

[0224] (7) The method for forming a protective film according to any one of (1) to (6) above, wherein

[0225] In the step (B), the cleaning liquid is supplied from the surface-side cleaning liquid supply portion located on the surface side of the substrate to a position outside the periphery of the substrate to clean the cup for receiving the processing liquid dropped from the substrate.

[0226] (8) The method for forming a protective film according to (6) or (7) above, wherein

[0227] The ejection direction of the cleaning liquid ejected from the surface-side cleaning liquid supply portion in a plan view is the same as the ejection direction of the coating liquid ejected from the surface-side coating portion in a plan view, and the ejection direction of the cleaning liquid ejected from the surface-side cleaning liquid supply portion in a side view is the same as the ejection direction of the coating liquid ejected from the surface-side coating portion in a side view.

[0228] (9) The method for forming a protective film according to any one of (1) to (8) above, wherein

[0229] The angle formed by the rotation direction of the substrate at the landing point of the coating liquid on the substrate from the surface-side coating portion and the ejection direction of the coating liquid ejected from the surface-side coating portion in a plan view is an acute angle.

[0230] (10) The method for forming a protective film according to any one of (1) to (9) above, wherein

[0231] Before the step (A), a step (E) is further included, in which while the substrate is rotated, the cleaning liquid is supplied from the cleaning liquid supply portion located on the back side of the substrate to the back side of the substrate to clean the cup surrounding the periphery of the substrate.

[0232] (11) The method for forming a protective film according to any one of (1) to (10) above, wherein,

[0233] It further includes step (F), in which the coating liquid ejection port for ejecting the coating liquid of the back side coating part is cleaned with the solvent from the solvent ejection port, and the solvent ejection port and the coating liquid ejection port are separately provided on the back side coating part.

[0234] (12) The method for forming a protective film according to (11) above, wherein,

[0235] Step (F) is carried out after the substrate that has undergone steps (A) to (C) leaves the rotary holding part that holds the substrate in a rotatable manner.

[0236] (13) The method for forming a protective film according to (11) or (12) above, wherein,

[0237] In step (F), while ejecting the coating liquid from the coating liquid ejection port of the back side coating part, the coating liquid ejection port is cleaned with the solvent.

[0238] (14) The method for forming a protective film according to any one of (11) to (13) above, wherein,

[0239] In step (F), the solvent is ejected from the solvent ejection port toward the wall surface of the back side coating part where the coating liquid ejection port is provided.

[0240] (15) The method for forming a protective film according to any one of (11) to (14) above, wherein,

[0241] Step (F) is carried out before and after performing steps (A) to (C) on a plurality of substrates belonging to the same batch.

[0242] (16) The method for forming a protective film according to any one of (11) to (15) above, wherein,

[0243] Based on the correlation data obtained in advance between the coating width of coating the coating liquid from the front side coating part onto the substrate and the ejection time of ejecting the coating liquid from the front side coating part, and the set coating width, the ejection time in step (A) is changed.

[0244] (17) The method for forming a protective film according to any one of (1) to (16) above, wherein,

[0245] The protective film is a protective film for a cleaning liquid that removes, by batch processing, a layer made of a material of the same type as the substrate material from the substrate.

[0246] (18) A protective film forming apparatus that forms a protective film on a peripheral portion of a substrate, the substrate having a plurality of patterned layers on a surface, the protective film forming apparatus including:

[0247] A rotation holding unit that holds the substrate and rotates the substrate;

[0248] A front side coating unit that supplies a coating liquid for forming the protective film to the surface of the substrate from the surface side of the substrate;

[0249] A cleaning liquid supply unit that supplies a cleaning liquid to the back surface of the substrate from the back surface side of the substrate;

[0250] A back side coating unit that supplies the coating liquid to the back surface of the substrate from the back surface side of the substrate;

[0251] And a control unit,

[0252] wherein the control unit is configured to perform the following processes:

[0253] Process (A) of forming the protective film on the peripheral portion of the substrate by rotating the substrate and causing the front side coating unit to supply the coating liquid to the surface of the substrate;

[0254] Process (B) of cleaning the back surface and the peripheral end surface of the substrate by rotating the substrate and causing the cleaning liquid supply unit to supply the cleaning liquid to the back surface of the substrate after Process (A); and

[0255] Process (C) of forming the protective film on the back surface and the peripheral end surface of the peripheral portion of the substrate by rotating the substrate and causing the back side coating unit to supply the coating liquid to the back surface of the substrate after Process (B).

[0256] (19) The protective film forming apparatus according to (18) above, wherein

[0257] a position on the back surface of the substrate where the cleaning liquid is supplied by the cleaning liquid supply unit in Process (B) is closer to the inside than a position on the back surface of the substrate where the coating liquid is supplied by the back side coating unit in Process (C).

[0258] (20) The protective film forming apparatus according to (18) or (19) above, wherein

[0259] The control unit is configured to further perform a process (D) after the process (A) and before the process (B). In the process (D), the substrate is rotated in a state where the coating liquid is not supplied to the substrate, so as to dry the protective film.

[0260] The rotation speed of the substrate in the process (D) is increased step by step.

[0261] (21) The protective film forming apparatus according to any one of (18) to (20) above, wherein

[0262] The angle formed by the rotation direction of the substrate at the landing point of the coating liquid on the substrate from the surface side coating unit and the ejection direction of the coating liquid ejected from the surface side coating unit in a plan view is an acute angle.

[0263] (22) The protective film forming apparatus according to any one of (18) to (21) above, wherein

[0264] The protective film forming apparatus further includes a cup, which is arranged so as to be able to surround the substrate held by the rotary holding unit.

[0265] The control unit is configured to further perform a process (E) before the process (A). In the process (E), while the substrate is rotated, the cleaning liquid supply unit located on the back side of the substrate supplies cleaning liquid to the back side of the substrate to clean the cup.

[0266] (23) The protective film forming apparatus according to any one of (18) to (22) above, wherein

[0267] The back side coating unit has:

[0268] A coating liquid ejection port for ejecting the coating liquid; and

[0269] A solvent ejection port, which is separately arranged from the coating liquid ejection port and is used for ejecting solvent.

[0270] Wherein, the control unit is configured to further perform a process (F). In the process (F), the coating liquid ejection port is cleaned with the solvent from the solvent ejection port.

[0271] (24) The protective film forming apparatus according to (23) above, wherein

[0272] A notch is provided in a portion on the coating liquid ejection port side and downstream of the ejection direction of the coating liquid ejected from the coating liquid ejection port in the back side coating unit.

[0273] (25) The protective film forming apparatus according to (23) or (24) above, wherein

[0274] The surface extending from below the coating liquid ejection port in the back side coating unit in the ejection direction of the coating liquid is an inclined surface that goes downward in the ejection direction.

[0275] (26) The protective film forming apparatus according to any one of (23) to (25) above, wherein

[0276] The back side coating unit has a wall portion that extends in a manner facing the solvent ejection port from a portion of the surface provided with the coating liquid ejection port that is on the downstream side in the ejection direction of the solvent ejected from the solvent ejection port.

[0277] (27) A substrate processing system, comprising:

[0278] A coating system having the protective film forming apparatus according to any one of (18) to (25) above;

[0279] A cleaning system having a cleaning device that uses a cleaning liquid to remove, by batch processing, a layer made of a material having the same type as the substrate material in the substrate on which the protective film is formed; and

[0280] A removal system having a removal device that removes the protective film from the substrate.

[0281] Explanation of reference numerals

[0282] 5: Control device; 11: Protective film forming apparatus; 111: Rotating holding disk; 132: Front side coating nozzle; 141: Cleaning nozzle; 151: Back side coating nozzle; CL: Cleaning liquid; F: Protective film; HL: Protecting liquid; PL: Patterned layer; W: Wafer; Wb3: Side end face (peripheral end face).

Claims

1. A method for forming a protective film, which is used to form a protective film on the peripheral portion of a substrate, wherein the substrate has a multilayer patterned layer on its surface, and the method for forming the protective film includes: Step (A): While rotating the substrate, a coating liquid for forming the protective film is supplied from a surface-side coating part located on the surface side of the substrate to the surface of the substrate, so as to form the protective film on the peripheral portion of the substrate; Step (B): After step (A), while rotating the substrate, a cleaning liquid is supplied from a cleaning liquid supply part located on the back side of the substrate to the back of the substrate, so as to clean the back and the peripheral end surface of the substrate; and Step (C): After step (B), while rotating the substrate, the coating liquid is supplied from a back-side coating part located on the back side of the substrate to the back of the substrate, so as to form the protective film on the back and the peripheral end surface of the peripheral portion of the substrate.

2. The method for forming a protective film according to claim 1, wherein The position on the back of the substrate where the cleaning liquid is supplied by the cleaning liquid supply part in step (B) is closer to the inside than the position on the back of the substrate where the coating liquid is supplied by the back-side coating part in step (C).

3. The method for forming a protective film according to claim 1 or 2, wherein The rotation speed of the substrate in step (A), the rotation speed in step (C), and the rotation speed in step (B) increase in this order from low to high.

4. The method for forming a protective film according to claim 1 or 2, wherein In step (A), when supplying the coating liquid, the surface-side coating part is moved from the outside of the peripheral edge of the substrate to the peripheral portion of the substrate, and then moved from the peripheral portion of the substrate to the outside of the peripheral edge of the substrate.

5. The method for forming a protective film according to claim 1 or 2, wherein Before step (B) and after step (A), there is also a step (D), in which the substrate is rotated in a state where the coating liquid is not supplied to the substrate, so as to dry the protective film, The rotation speed of the substrate in step (D) is increased step by step.

6. The method for forming a protective film according to claim 5, wherein In step (B) or step (D), the cleaning liquid is supplied from a surface-side cleaning liquid supply part located on the surface side of the substrate to a position outside the peripheral edge of the substrate, so as to clean the cup for receiving the processing liquid falling from the substrate.

7. The method for forming a protective film according to claim 6, wherein The ejection direction of the cleaning liquid ejected from the surface-side cleaning liquid supply part in a top view is the same as the ejection direction of the coating liquid ejected from the surface-side coating part in a top view, and the ejection direction of the cleaning liquid ejected from the surface-side cleaning liquid supply part in a side view is the same as the ejection direction of the coating liquid ejected from the surface-side coating part in a side view.

8. The method for forming a protective film according to claim 1 or 2, wherein The angle formed by the rotation direction of the substrate at the landing point of the coating liquid from the surface-side coating section on the substrate and the ejection direction of the coating liquid ejected from the surface-side coating section in a plan view is an acute angle.

9. The method for forming a protective film according to claim 1 or 2, wherein, It further includes step (F), in which the coating liquid ejection port for ejecting the coating liquid of the back-side coating section is cleaned with a solvent from the solvent ejection port, and the solvent ejection port is separately provided from the coating liquid ejection port on the back-side coating section.

10. The method for forming a protective film according to claim 9, wherein, In step (F), while ejecting the coating liquid from the coating liquid ejection port of the back-side coating section, the coating liquid ejection port is cleaned with the solvent.

11. The method for forming a protective film according to claim 9, wherein, In step (F), the solvent is ejected from the solvent ejection port toward the wall surface of the back-side coating section where the coating liquid ejection port is provided.

12. The method for forming a protective film according to claim 1 or 2, wherein It includes the following steps: Based on the correlation data between the coating width of coating the coating liquid from the surface-side coating section onto the substrate and the ejection time of ejecting the coating liquid from the surface-side coating section obtained in advance, and the set coating width, the ejection time in step (A) is changed.

13. A protective film forming apparatus for forming a protective film on the peripheral portion of a substrate, the substrate having a plurality of patterned layers on its surface, the protective film forming apparatus comprising: A rotation holding section that holds the substrate and rotates the substrate; A surface-side coating section that supplies a coating liquid for forming the protective film from the surface side of the substrate to the surface of the substrate; A cleaning liquid supply section that supplies a cleaning liquid from the back side of the substrate to the back of the substrate; A back-side coating section that supplies the coating liquid from the back side of the substrate to the back of the substrate; And a control section, Among them, The control section is configured to execute the following steps: Step (A), while rotating the substrate, the surface-side coating section supplies the coating liquid to the surface of the substrate to form the protective film on the peripheral portion of the substrate; Step (B), after step (A), while rotating the substrate, the cleaning liquid supply section supplies the cleaning liquid to the back of the substrate to clean the back and the peripheral end surface of the substrate; and Step (C), after step (B), while rotating the substrate, the back-side coating section supplies the coating liquid to the back of the substrate to form the protective film on the back and the peripheral end surface of the peripheral portion of the substrate.

14. The protective film forming apparatus according to claim 13, wherein, The position on the back of the substrate where the cleaning liquid is supplied by the cleaning liquid supply section in step (B) is closer to the inside than the position on the back of the substrate where the coating liquid is supplied by the back-side coating section in step (C).

15. The protective film forming apparatus according to claim 13 or 14, wherein, The control unit is configured to further perform a process (D) after the process (A) and before the process (B). In the process (D), the substrate is rotated in a state where the coating liquid is not supplied to the substrate to dry the protective film. The rotation speed of the substrate in the process (D) is increased step by step.

16. The protective film forming apparatus according to claim 13 or 14, wherein The backside coating unit has: A coating liquid ejection port for ejecting the coating liquid; and A solvent ejection port that is separately provided from the coating liquid ejection port and is used for ejecting a solvent. The control unit is configured to further perform a process (F). In the process (F), the coating liquid ejection port is cleaned with the solvent from the solvent ejection port.

17. The protective film forming apparatus according to claim 16, wherein A notch is provided in a portion of the backside coating unit on the side closer to the coating liquid ejection port and on the downstream side of the ejection direction in which the coating liquid is ejected from the coating liquid ejection port.

18. The protective film forming apparatus according to claim 16, wherein The surface that extends from below the coating liquid ejection port in the backside coating unit in the ejection direction of the coating liquid is an inclined surface that goes downward in the ejection direction.

19. The protective film forming apparatus according to claim 16, wherein The backside coating unit has a wall portion that extends in a direction facing the solvent ejection port from a portion of the surface provided with the coating liquid ejection port that is on the downstream side of the ejection direction in which the solvent is ejected from the solvent ejection port and is closer to the solvent ejection port than the coating liquid ejection port.

20. A substrate processing system, comprising: A coating system having the protective film forming apparatus according to claim 13 or 14; A cleaning system having a cleaning device that removes, by batch processing, a layer formed on the substrate having the protective film and made of a material of the same type as the substrate material with a cleaning liquid; and A removal system having a removal device that removes the protective film from the substrate.

Images