Substrate processing apparatus and substrate processing method

Abstract

The invention provides a substrate processing apparatus and a substrate processing method. The apparatus includes: a substrate holding unit that holds a substrate having a first surface and a second surface in a horizontal posture; a rotation driving unit that rotates the substrate holding unit and the substrate held by the substrate holding unit about a vertical axis; a first fluid supply unit that supplies a fluid to the first surface of the substrate held by the substrate holding unit; a second fluid supply unit that supplies a fluid to the second surface of the substrate held by the substrate holding unit; and a control unit that controls the rotation driving unit, the first fluid supply unit, and the second fluid supply unit to perform: a pretreatment step in which the substrate is rotated at a first rotation speed, the heated fluid is supplied to the second surface of the substrate, and the pre-wetting liquid is supplied to the first surface of the substrate; and a chemical solution treatment step in which, after the pretreatment step, the substrate is rotated at a second rotation speed, and the chemical solution is supplied to the first surface of the substrate while the heated fluid is intermittently supplied to the second surface of the substrate, thereby performing chemical solution treatment on the first surface.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0002] In the manufacture of semiconductor devices, wet etching of substrates, chemical solution cleaning, and other chemical solution treatments are performed by supplying a chemical solution to the surface of the substrate while rotating the substrate using a rotating holding disk. A temperature-regulating liquid is supplied to the back surface of the substrate to equalize the temperature distribution of the substrate and improve the in-plane uniformity of the chemical solution treatment (see, for example, Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2015-057816 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The present disclosure provides a technique capable of improving the in-plane uniformity of the temperature of a substrate while reducing the amount of chemical solution used.

[0008] Solutions to the Problems

[0009] According to one embodiment of the present disclosure, there is provided a substrate processing apparatus including: a substrate holding unit that holds a substrate having a first surface and a second surface in a horizontal posture; a rotation driving unit that rotates the substrate holding unit and the substrate held by the substrate holding unit about a vertical axis; a first fluid supply unit that supplies a fluid to the first surface of the substrate held by the substrate holding unit; a second fluid supply unit that supplies a fluid to the second surface of the substrate held by the substrate holding unit; and a control unit. The control unit controls the rotation driving unit, the first fluid supply unit, and the second fluid supply unit to perform the following processes: a pretreatment process of supplying a heated fluid to the second surface of the substrate and supplying a pre-wetting liquid to the first surface of the substrate while rotating the substrate at a first rotation speed; and a chemical solution treatment process of performing a chemical solution treatment on the first surface by supplying a heated fluid to the second surface of the substrate intermittently and supplying a chemical solution to the first surface of the substrate while rotating the substrate at a second rotation speed after the pretreatment process.

[0010] Effects of the Invention

[0011] According to the above-described embodiment, it is possible to improve the in-plane uniformity of the temperature of the substrate while reducing the amount of chemical solution used. Brief Description of the Drawings

[0012] Figure 1 is a schematic cross-sectional view of a substrate processing system according to an embodiment of a substrate processing apparatus.

[0013] Figure 2 shows Figure 1 an example of the structure of a processing unit included in the substrate processing system.

[0014] Figure 3 shows Figure 2 an example of the structure of a DIW supply mechanism for temperature control of the processing unit.

[0015] Figure 4 is a schematic side view showing the states of respective sub-processes of a chemical liquid processing step.

[0016] Figure 5 is a diagram for explaining changes in temperature distribution during execution of a backside non-heated scan ejection sub-process (S2).

[0017] Figure 6 is for explaining Figure 2 an example of a processing sequence of a process executed in the processing unit.

[0018] Figure 7 shows Figure 6 a graph of temperature changes of a wafer during execution of the process shown. DETAILED DESCRIPTION

[0019] An embodiment of a substrate processing apparatus will be described with reference to the accompanying drawings.

[0020] Figure 1 is a diagram showing a schematic structure of the substrate processing system according to the present embodiment. Hereinafter, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is set to the vertically upward direction to clarify the positional relationship.

[0021] As Figure 1 shown, the substrate processing system 1 includes a load / unload station 2 and a processing station 3. The load / unload station 2 and the processing station 3 are disposed adjacent to each other.

[0022] The load / unload station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C are placed on the carrier placement unit 11, and the carriers C accommodate a plurality of substrates, in the present embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state.

[0023] The transfer unit 12 is disposed adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a transfer section 14 therein. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and the substrate transfer device 13 uses the wafer holding mechanism to transfer the wafer W between the carrier C and the transfer section 14.

[0024] The processing station 3 is disposed adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the transfer unit 15.

[0025] A substrate transfer device 17 is provided inside the transfer unit 15. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and the substrate transfer device 17 uses the wafer holding mechanism to transfer the wafer W between the transfer section 14 and the processing unit 16.

[0026] The processing unit 16 performs a prescribed substrate process on the wafer W transferred by the substrate transfer device 17.

[0027] Further, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer and includes an arithmetic processing unit 18 and a storage unit 19. Programs for controlling various processes executed in the substrate processing system 1 are stored in the storage unit 19. The arithmetic processing unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0028] In addition, the programs may also be recorded on a computer-readable storage medium and installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), and a memory card.

[0029] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and places the taken-out wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

[0030] After the wafer W carried into the processing unit 16 is processed by the processing unit 16, it is taken out from the processing unit 16 by the substrate transfer device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned by the substrate transfer device 13 to the carrier C on the carrier placement unit 11.

[0031] Next, with reference to Figure 2 the structure of the processing unit 16 will be described.

[0032] The processing unit 16 includes a chamber 20, a substrate holding and rotating mechanism 30, a first processing fluid supply unit (first fluid supply unit) 40, a second processing fluid supply unit (second fluid supply unit) 50, and a liquid receiving cup 60.

[0033] The chamber 20 houses the substrate holding and rotating mechanism 30 and the liquid receiving cup 60. An FFU (Fan Filter Unit) 21 is provided at the top of the chamber 20. The FFU 21 is used to form a downward flow inside the chamber 20.

[0034] The substrate holding and rotating mechanism 30 includes a substrate holding part 31, a support column part 32, and a rotation driving part 33. The substrate holding part 31 is configured as a mechanical holding disk having a disk-shaped base 31a and a plurality of holding claws 31b provided at intervals along the outer peripheral edge of the base 31a in the circumferential direction. The substrate holding part 31 holds the wafer W horizontally by the holding claws 31b. When the holding claws 31b hold the substrate, a gap is formed between the upper surface of the base 31a and the lower surface of the wafer W.

[0035] The support column part 32 is a hollow member extending in the vertical direction. The upper end of the support column part 32 is connected to the base 31a. The support column part 32 is rotated by the rotation driving part 33 so that the substrate holding part 31 and the wafer W held by the substrate holding part 31 rotate about the vertical axis.

[0036] The liquid receiving cup 60 is arranged to surround the substrate holding part 31. The liquid receiving cup 60 captures the processing liquid scattered from the wafer W held by the substrate holding part 31 and rotating. A drain port 61 is formed at the bottom of the liquid receiving cup 60. The processing liquid captured by the liquid receiving cup 60 is discharged to the outside of the processing unit 16 through the drain port 61. An exhaust port 62 is formed at the bottom of the liquid receiving cup 60. The internal space of the liquid receiving cup 60 is suctioned through the exhaust port 62. The gas supplied from the FFU 21 is discharged to the outside of the processing unit 16 after being inhaled into the inside of the liquid receiving cup 60 through the exhaust port 62.

[0037] The first processing fluid supply unit 40 supplies various processing fluids (liquids, gases, gas-liquid mixed fluids, etc.) to the upper surface of the wafer W held by the substrate holding part 31 (usually the surface of the wafer W on which devices are formed). The first processing fluid supply unit 40 has a plurality of surface nozzles 41 that eject the processing fluid toward the upper surface (first surface) of the wafer W. Regarding the number of the surface nozzles 41, the number required for the processing performed in the processing unit 16 is set. In Figure 2 five surface nozzles 41 are depicted, but the number is not limited to this.

[0038] The first processing fluid supply unit 40 has one or more (two in the example shown) nozzle arms (nozzle moving mechanisms) 42. Each nozzle arm 42 carries at least one of the plurality of surface nozzles 41. Each nozzle arm 42 can move the carried surface nozzle 41 between a position (processing position) substantially directly above the rotation center of the wafer W and a retreat position further outward than the upper end opening of the liquid receiving cup 60. The nozzle arm 42 may be a type that rotates around a rotation axis or a type that moves in translation.

[0039] The surface nozzles 41 are respectively supplied with treatment fluid by corresponding treatment fluid supply mechanisms 43 (which constitute a part of the first treatment fluid supply unit 40). The treatment fluid supply mechanism 43 can be composed of a treatment fluid supply source such as a tank, a storage bottle (Japanese: ボンベ), a factory supply energy (Japanese: 工場用力), a supply pipeline for supplying the treatment fluid from the treatment fluid supply source to the surface nozzle 41, an on-off valve arranged in the supply pipeline, and a flow control valve and other flow regulating devices. A discharge pipeline can be connected to the supply pipeline to discharge the treatment fluid (especially the treatment liquid) retained in the supply pipeline of the surface nozzle 41 and its vicinity. Such a treatment fluid supply mechanism 43 is widely known in the technical field of semiconductor manufacturing equipment, and the illustration and detailed description of the structure are omitted. A liquid receiving member (not shown) is provided in the processing unit 16 so that pseudo-dispensing can be performed when each surface nozzle 41 is in a retracted position.

[0040] The second processing fluid supply unit 50 supplies various processing fluids (processing liquid, processing gas, etc.) to the lower surface of the wafer W held on the substrate holding unit 31 (usually the back surface of the wafer W without devices formed thereon). The second processing fluid supply unit 50 has one or more (two in the example shown) back surface nozzles 51A and 51B that spray the processing fluid toward the lower surface (second surface) of the wafer W. Figure 2 , a processing liquid supply pipe 52 extends in the vertical direction inside the hollow support portion 32. The upper end openings of the two flow paths extending in the vertical direction in the processing liquid supply pipe 52 respectively function as back nozzles 51A and 51B. The processing liquid supply pipe 52 is provided in the support portion 32 so as to maintain a non-rotating state even when the substrate holding portion 31 and the support portion 32 rotate.

[0041] The back nozzle 51A (heating fluid nozzle) is supplied with heated DIW (pure water) for temperature control of the wafer W by the temperature control DIW supply mechanism 53A (which constitutes a part of the second processing fluid supply unit 50). The back nozzle 51A and the temperature control DIW supply mechanism 53A constitute a supply mechanism for the heating fluid (temperature control fluid). The back nozzle 51B can be supplied with DIW or nitrogen gas at room temperature by the processing fluid supply mechanism 53B.

[0042] In this specification, DIW at normal temperature (e.g., 24°C) is referred to as "CDIW" to distinguish it from heated DIW, i.e., "HDIW".

[0043] Next, with reference to Figure 3 the structure of the temperature-adjusting DIW supply mechanism 53A for the back nozzle 51A will be described. One temperature-adjusting DIW supply mechanism 53A is provided for each of the plurality of processing units 16 (16-1, 16-2, 16-3,...). The structures of the respective temperature-adjusting DIW supply mechanisms 53A are substantially the same as each other.

[0044] The substrate processing system 1 has an HDIW main pipe 23 connected to the supply source of HDIW and a CDIW main pipe 24 connected to the supply source of CDIW. The main pipes 23 and 24 supply HDIW and CDIW to all of the plurality of processing units 16 included in one substrate processing system 1. A temperature sensor 25 is provided in the HDIW main pipe 23, and a temperature sensor 26 is provided in the CDIW main pipe 24.

[0045] The supply sources of HDIW and CDIW are, for example, the factory supply energy of a semiconductor device manufacturing factory where the substrate processing system 1 is installed. Alternatively, the supply source of HDIW is a tank storing HDIW provided as a component of the substrate processing system 1.

[0046] The temperature-adjusting DIW supply mechanism 53A has a main pipe 531 (heating fluid line) branched from the HDIW main pipe 23. In the main pipe 531, a flow meter 532, a constant pressure valve 533, an on-off valve 534, a first confluence point 535, a second confluence point 536, a first branch point 537, an on-off valve 538, and a second branch point 539 are provided in order from the upstream side. The downstream end of the main pipe 531 is connected to the back nozzle 51A via a flow path in the processing liquid supply pipe 52.

[0047] The flow meter 532 and the constant pressure valve 533 constitute a flow rate adjustment unit that adjusts the flow rate of HDIW flowing in the main pipe 531. The constant pressure valve 533 has a pilot port (not shown in detail). The constant pressure valve 533 operates so as to achieve a secondary side pressure corresponding to the operating pressure (air pressure) supplied to the pilot port from an electric-pneumatic regulator (not shown). The operating pressure supplied to the pilot port of the constant pressure valve 533 is feedback-controlled by the control device ( Figure 1 the control device 4 of or its subordinate controller) so that the detected flow rate of the flow meter 532 becomes a desired value (set value).

[0048] The DIW supply mechanism 53A for temperature adjustment also has a dilution liquid pipeline 540 branched from the CDIW main pipe 24. The dilution liquid pipeline 540 branches into a first branched dilution liquid pipeline 542 for large flow rate and a second branched dilution liquid pipeline 543 for small flow rate at the branch point 541. A throttle valve 544 and an on-off valve 545 are provided in the first branched dilution liquid pipeline 542. A throttle valve 546 and an on-off valve 547 are provided in the second branched dilution liquid pipeline 543. In the illustrated example, the throttle valves 544 and 546 are configured as throttle orifices with check valves (fixed throttle valves). The first branched dilution liquid pipeline 542 is connected to the main pipeline 531 at the first confluence point 535, and the second branched dilution liquid pipeline 543 is connected to the main pipeline 531 at the second confluence point 536. In the case where it is not necessary to significantly change the mixing ratio of CDIW and HDIW, the dilution liquid pipeline 540 can also be connected to the main pipeline 531 without branching. In this case, it becomes a structure in which the second branched dilution liquid pipeline 543, the throttle valve 546, and the on-off valve 547 are removed from the Figure 3 structure.

[0049] A flow meter 548 and a constant pressure valve 549 are provided at a position on the upstream side of the dilution liquid pipeline 540 from the branch point 541. The flow meter 548 and the constant pressure valve 549 have the same structure and function as the flow meter 532 and the constant pressure valve 533.

[0050] At the first branch point 537, a first drain line 550 branches from the main pipeline 531. In the first drain line 550, an on-off valve 551, a temperature sensor 552, and a throttle valve 553 (a throttle orifice with a check valve (fixed throttle valve) in the illustrated example) are provided in sequence from the upstream side.

[0051] At the second branch point 539, a second drain line 554 branches from the main pipeline 531. In the second drain line 554, an on-off valve 555 and a throttle valve 556 (a throttle orifice with a check valve (fixed throttle valve) in the illustrated example) are provided in sequence from the upstream side.

[0052] A temperature sensor 557 is provided at a position on the downstream side of the main pipeline 531 from the second branch point 539.

[0053] When the supply sources of HDIW and CDIW are the energy supplied by the factory, the temperature of the HDIW flowing in the HDIW main pipe 23 is, for example, 70 °C, and the temperature of the CDIW flowing in the CDIW main pipe 24 is, for example, 24 °C. This temperature changes slightly due to reasons such as changes in the external air temperature and the temperature in the clean room. Therefore, it is monitored by the temperature sensors 25 and 26.

[0054] As described later, with the temperature regulation of wafer W as the main purpose, HDIW for temperature regulation is supplied to the back side of wafer W from back side nozzle 51A. DIW supply mechanism 53A for temperature regulation can supply only HDIW, or a mixture of HDIW and CDIW, from back side nozzle 51A to the back side of wafer W. The temperature of DIW supplied to wafer W from back side nozzle 51A can be adjusted by changing the mixing ratio of HDIW and CDIW (the ratio of the flow rate of HDIW flowing into main line 531 to the flow rate of CDIW flowing into main line 531 via diluent line 540 (542, 543)). In addition, in an example of the processing described later, HDIW at 65°C is supplied to wafer W from back side nozzle 51A.

[0055] The first drain line 550 is used for an operation (also referred to as “unusable discard” or “dummy allocation”) of discarding DIW without supplying it to the wafer W until the temperature is stabilized.

[0056] The second liquid discharge line 554 is used to discard the DIW remaining in the back nozzle 51A, the flow path in the processing liquid supply pipe 52 connected to the back nozzle 51A, and the pipes near the back nozzle 51A. This can prevent the DIW that is not temperature-controlled from being ejected when the temperature-adjusting DIW is just ejected from the back nozzle 51A.

[0057] Next, an example of liquid treatment performed on the wafer W in the processing unit 16 is described. The wafer W is held in a horizontal posture by the substrate holding and rotating mechanism 30 in such a manner that the surface to be processed is the upper surface, and is rotated around the vertical axis. The rotation of the wafer W continues until a series of processes are completed. In addition, the liquid treatment shown below can be performed by, for example, the operation of the substrate processing system 1 by the operation processing unit 18 of the control device 4 executing a control program based on the processing recipe stored in the storage unit 19 of the control device 4.

[0058] In addition, in the following, several surface nozzles 41 of the plurality of surface nozzles 41 belonging to the first processing fluid supply unit 40 are appropriately used to supply the processing fluid to the surface (first surface) of the wafer W. Specifically, for example, one surface nozzle 41 is assigned to each of functional water as a pre-wetting liquid, a chemical liquid (organic chemical liquid), and DIW as a rinsing liquid. The surface nozzle 41 that can be used to spray the chemical liquid is carried on one of the plurality of nozzle arms 42, and the surface nozzle 41 that can be used to spray the pre-wetting liquid and the rinsing liquid (there is also a case where both are DIW) is carried on another nozzle arm 42 of the plurality of nozzle arms 42, but it is not limited to this. The back nozzle 51A of the second processing fluid supply unit 50 is used to supply HDIW as a fluid for temperature control to the back side (second surface) of the wafer W.

[0059] As the liquid medicine used in the processes described below, organic liquid medicines are exemplified, such as TMAH (tetramethylammonium hydroxide), a mixed solution of TMAH and hydrogen peroxide water, ammonia, SC1 (a mixed solution of ammonia water and hydrogen peroxide water), choline, a mixed solution of choline and hydrogen peroxide water, and the like.

[0060] [Pseudo-distribution process]

[0061] First, the surface nozzle 41 for ejecting the liquid medicine (hereinafter also referred to as "liquid medicine nozzle 41C") is positioned directly above a pseudo-distribution port (not shown) for organic liquid medicine provided outside the liquid receiving cup 60, and pseudo-distribution of the liquid medicine is performed. Thereby, the relatively low-temperature liquid medicine whose temperature has dropped during the residence in the ejection port of the liquid medicine nozzle 41C and the pipe (not shown) connected thereto is replaced with a new, relatively high-temperature liquid medicine. Thereby, it is possible to eject a relatively high-temperature (about 55 °C here) liquid medicine from the start of ejection onto the wafer W. The pseudo-distribution is performed, for example, at an ejection flow rate of 700 ml / min for 4 seconds. The conditions for pseudo-distribution are not limited to this. Regarding the temperature of the liquid medicine ejected from the liquid medicine nozzle 41C onto the wafer W, an appropriate temperature is selected according to the type of the liquid medicine, the required etching amount, etc., and for example, it can be selected from the range of about 30 °C to about 80 °C.

[0062] [Pretreatment process]

[0063] Next, the surface nozzle 41 for ejecting the pre-wetting liquid (hereinafter also referred to as "pre-wetting nozzle 41P") is positioned directly above the center of the rotating wafer W, and the pre-wetting liquid is ejected in such a way as to land on the center of the wafer W. The pre-wetting liquid can be set as DIW (pure water), or functional water obtained by dissolving ammonia in DIW (for example, functional water with an ammonia concentration of 10 ppm or less) or functional water obtained by dissolving ozone in DIW (for example, functional water with an ozone concentration of 20 ppm or less).

[0064] Simultaneously with or approximately simultaneously (for example, about 1 second before and after) the start of ejection of the pre-wetting liquid, HDIW (heated DIW) as the temperature-adjusting liquid is ejected from the back nozzle 51A. The temperature of the HDIW is, for example, about 65 °C (not limited to this). The temperature of the HDIW ejected from the back nozzle 51A is the same throughout all processes. However, the temperature of the HDIW can also be changed for each process. The temperature of the pre-wetting liquid is, for example, normal temperature, but heated pre-wetting liquid can also be used.

[0065] In addition, in the following description, it is assumed that the position of the surface nozzle 41 (the position related to the radial direction of the wafer radius with respect to the rotation center of the wafer W) corresponds to the position of the liquid landing point on the surface of the wafer W where the liquid ejected from the surface nozzle 41 lands (the position related to the radial direction of the wafer radius with respect to the rotation center of the wafer W). Spraying the liquid from the surface nozzle 41 toward the center of the wafer W means spraying the liquid from the surface nozzle 41 in such a way that it lands on the center of the wafer W. In addition, the liquid ejected from the surface nozzle 41 landing on the "center portion" of the wafer W is not limited to the case where the liquid ejected from the surface nozzle 41 lands exactly on the rotation center of the wafer W, but also includes the case where the liquid spreading due to the landing momentum extends to the exact rotation center of the wafer W. The same applies to the liquid ejected from the back nozzle 51.

[0066] The rotation speed of the wafer W in the pretreatment process is set to a relatively high speed of about 1000 rpm, for example. This is to enable the pre-wetting liquid and HDIW to quickly spread over the entire front and back surfaces of the wafer W.

[0067] In a preferred embodiment, in the pretreatment process, immediately after the pre-wetting liquid starts to be ejected, the ejection flow rate of the pre-wetting liquid is set to a relatively large flow rate of about 700 ml / min, for example, so that the entire surface of the wafer W is quickly covered with the pre-wetting liquid. Then, after the entire surface of the wafer W is covered with the pre-wetting liquid, the ejection flow rate of the pre-wetting liquid is decreased to a small flow rate of about 150 ml / min.

[0068] In a preferred embodiment, in all processes including the pretreatment process, the ejection flow rate of the HDIW ejected from the back nozzle 51A is set to a large flow rate of 1500 ml / min, for example. Thereby, from the start of ejection, the entire back surface of the wafer W is evenly covered with HDIW, and the entire area of the wafer W is quickly and evenly heated. In the case of a low flow rate, it is difficult to warm the outer peripheral portion of the wafer W.

[0069] When the pre-wetting liquid is DIW, the pretreatment process is carried out for about 16 seconds (not limited to this). When using the aforementioned functional water as the pre-wetting liquid, the pre-wetting treatment time can be shortened to about 8 seconds (not limited to this), for example. This is because when using the aforementioned functional water, due to the influence of the zeta-potential, etc., it is not easy for fine particles to reattach to the wafer W.

[0070] In addition, in the pretreatment process, when the pre-wetting liquid is DIW or ozone water, the liquid collected by the liquid receiving cup 60 is discharged to the acid-based factory waste liquid line, and when the pre-wetting liquid is dilute ammonia water, the liquid collected by the liquid receiving cup 60 is discharged to the alkali-based factory waste liquid line.

[0071] As is clear from the above description, the pre-treatment process serves as a heating process for raising the temperature of the wafer W to a temperature suitable for chemical solution treatment, and as a pre-wetting process for making the surface of the wafer W easily wettable by the chemical solution.

[0072] [Chemical Solution Treatment Process]

[0073] After the pre-treatment process is completed, a chemical solution treatment process for treating the surface of the wafer W with an organic chemical solution is then carried out. The chemical solution treatment process consists of a plurality of sub-processes. In the chemical solution treatment process, after the initial sub-process (INI) is carried out, the backside heating scan ejection sub-process (S1), the backside non-heating scan ejection sub-process (S2), the backside heating central ejection sub-process (S3), and the backside non-heating central ejection sub-process (S4) are executed in an appropriate combination. In the chemical solution treatment process, the backside non-heating scan ejection sub-process (S2) is carried out at least once.

[0074] <Initial Sub-Process (INI)>

[0075] After the pre-treatment process is completed, the rotation speed of the wafer W is decreased to a medium speed of, for example, about 600 rpm. The rotation speed of the wafer W during the execution of the chemical solution treatment process is maintained at this rotation speed (here, 600 rpm). At approximately the same time, the ejection of HDIW to the backside of the wafer W carried out in the pre-treatment process is temporarily stopped. In addition, a chemical solution at a temperature higher than room temperature (for example, 55°C) is ejected from the chemical solution nozzle 41C to the central portion of the wafer W. The ejection flow rate of the chemical solution is set to a medium ejection flow rate of, for example, about 500 ml / min. The state in which the ejection of HDIW to the backside of the wafer W is stopped and the chemical solution for the surface of the wafer W is ejected is maintained for a predetermined time, for example, 3 seconds. Here, the reason for temporarily stopping the ejection of HDIW to the backside of the wafer W is to prevent the temperature of the central portion of the wafer W from becoming too high compared to the temperature of the outer peripheral portion. In addition, it is preferable that the rotation speed of the wafer W in the chemical solution treatment process is smaller than the rotation speed of the wafer W in the pre-treatment process, but it may also be the same.

[0076] Next, while continuing to eject the chemical solution to the central portion of the wafer W from the chemical solution nozzle 41C at the same ejection flow rate, the ejection of the stopped HDIW to the backside of the wafer W is started again. This state is maintained for a predetermined time, for example, 2 seconds, and the initial sub-process ends. In addition, the initial sub-process can also be said to be the same as the process combined with the backside non-heating central ejection sub-process (S4) and the backside heating central ejection sub-process (S3) described later.

[0077] <Backside Heating Scan Ejection Sub-Process (S1)>

[0078] HDIW is ejected from the back nozzle 51A and liquid medicine is ejected from the liquid medicine nozzle 41C toward the center of the wafer W at a relatively small ejection flow rate of, for example, about 150 ml / min. From this state, the liquid medicine nozzle 41C is moved to move the landing point of the liquid medicine from the center of the wafer W to the peripheral portion PR of the wafer W, for example, in 1 second (not limited to this). In this specification, the peripheral portion PR (the word "peripheral portion" marked with the reference symbol "PR") is used as a word to refer to a specific position near the periphery (edge) of the wafer W. In this example, when the wafer W is a 12-inch wafer, the peripheral portion PR refers to a radial position 130 mm away from the rotation center of the wafer W.

[0079] Next, the chemical liquid nozzle 41C is stopped at a position just above the outer periphery PR of the wafer W for, for example, 1 second (not limited thereto), and the chemical liquid is sprayed toward the outer periphery from the chemical liquid nozzle 41C in the stopped state. Next, the chemical liquid nozzle 41C is moved to move the landing point of the chemical liquid from the outer periphery of the wafer W to the center of the wafer W for, for example, 1 second (not limited thereto). That is, in this back surface heating scanning spraying sub-step, HDIW is sprayed from the back surface nozzle 51A, and the chemical liquid is sprayed toward the surface of the wafer W from the chemical liquid nozzle 41 while scanning.

[0080] exist Figure 4 (A) schematically shows the execution of the back surface heating scanning ejection sub-step (S1).

[0081] <Back side non-heating scanning ejection sub-process (S2)>

[0082] The back surface non-heating scanning discharge sub-step is different from the back surface heating scanning discharge sub-step in that HDIW is not discharged from the back surface nozzle 51A, and the other processes are exactly the same.

[0083] exist Figure 4 (B) schematically shows the situation in which the back side non-heating scanning ejection sub-process (S2) is performed.

[0084] In the back surface heating scanning ejection sub-process and the back surface non-heating scanning ejection sub-process, the supply conditions of the liquid are determined in such a way that when the landing point of the liquid ejected from the liquid nozzle 41C is at a position away from the center of the wafer W, especially at the peripheral portion PR, the liquid cut (Japanese: liquid cut) (meaning that a region where a liquid film without the liquid is generated) does not occur in the central portion of the surface of the wafer W. In the present embodiment, the time for the landing point of the liquid to leave the central portion of the wafer W is about 3 seconds. This time also varies depending on the rotation speed of the wafer W, the volatility and fluidity of the liquid, etc.

[0085] In the backside heating scanning ejection sub-process in which HDIW is supplied to the central portion of the backside of the wafer W from the backside nozzle 51A at a large flow rate (1500 ml / min), as time passes, the temperature of the central portion of the wafer W rises, and the temperature of the central portion becomes higher than the temperature rise of the peripheral portion, and the temperature difference also becomes larger (details will be described later).

[0086] On the other hand, in the backside non-heating scanning ejection sub-process in which HDIW is not supplied to the central portion of the backside of the wafer W from the backside nozzle 51A, the temperature of the wafer W is determined by the balance between the heat dissipation of the wafer and the heat input caused by the liquid medicine supplied from the liquid medicine nozzle 41. In the present embodiment, the liquid medicine is supplied from the liquid medicine nozzle 41C at a relatively small flow rate (for example, about 150 ml / min). Since the influence of heat dissipation is large, the temperature of the wafer W decreases as a whole.

[0087] At this time, when the liquid medicine is supplied from the liquid medicine nozzle 41C to the peripheral portion PR of the wafer W, the temperature drop of the peripheral portion of the wafer W is suppressed by the liquid medicine. On the other hand, the temperature of the central portion of the wafer W without heat input drops significantly compared to the temperature of the peripheral portion PR. Therefore, the temperature difference between the central portion and the peripheral portion PR of the wafer W becomes smaller, or the temperature of the peripheral portion PR of the wafer W becomes higher than the temperature of the central portion of the wafer W. By utilizing the temperature drop tendency of the central portion of the wafer W in the backside non-heating scanning ejection sub-process, the in-plane heat history of the wafer W can be equalized. As a result, the etching amount (reaction amount, processing amount) etched by the liquid medicine can be equalized.

[0088] In Figure 5 the relationship between the position of the liquid medicine nozzle 41C and the temperature distribution of the wafer W in the backside non-heating scanning ejection sub-process is schematically shown. In Figure 5 the position of the liquid medicine nozzle 41C is shown at the upper part, and the corresponding temperature distribution of the wafer W is shown at the lower part of Figure 5 . From this, it can be seen that by lengthening the time for supplying the liquid medicine from the liquid medicine nozzle 41C to the peripheral portion PR of the wafer W, the temperature of the peripheral portion PR of the wafer W can be temporarily higher than the temperature of the central portion (refer to Figure 5 C, D). However, as described above, it is necessary to prevent the liquid medicine from running out at the central portion of the wafer W. From this viewpoint, it is preferable that the period during which the liquid medicine nozzle 41C stops moving at the peripheral portion PR of the wafer W is less than 3 seconds.

[0089] In addition, in the backside heating scanning ejection sub-process, regarding the temperature distribution of the wafer W, since the influence of the HDIW ejected from the backside nozzle 51A at a large flow rate is large, it is impossible or extremely difficult to be as Figure 5In this way, the temperature of the outer peripheral portion PR of the wafer W is made higher than the temperature of the central portion. However, in the backside heating scanning ejection sub-process, supplying the liquid chemical to a position away from the central portion of the wafer W (e.g., the outer peripheral portion PR) is effective in making the temperature of the outer peripheral portion PR of the wafer W approach the temperature of the central portion.

[0090] In the backside heating scanning ejection sub-process, HDIW is supplied to the central portion of the backside of the wafer W. Therefore, the waste liquid in the backside heating scanning ejection sub-process is a mixed liquid of HDIW and the liquid chemical. When the liquid chemical is an organic-based liquid chemical, the waste liquid must be discarded at a disposal site for organic-based waste liquid. When HDIW is supplied at 1500 ml / min and the liquid chemical is supplied at 150 ml / min, the waste liquid is generated at 1650 ml / min. Since HDIW is not supplied to the central portion of the backside of the wafer W in the backside non-heating scanning ejection sub-process, the waste liquid is generated at 150 ml / min in the backside non-heating scanning ejection sub-process. If the amount of the waste liquid increases, the waste liquid disposal cost also increases. Therefore, it is preferable that the amount of the waste liquid is small. By including the backside non-heating scanning ejection sub-process in the liquid chemical treatment process, not only the thermal history in the plane of the wafer W is equalized, but also the reduction of the waste liquid disposal cost can be achieved.

[0091] <Backside heating central ejection sub-process (S3) and backside non-heating central ejection sub-process (S4)>

[0092] The backside heating central ejection sub-process and the backside non-heating central ejection sub-process are different from the backside heating scanning ejection sub-process and the backside non-heating scanning ejection sub-process only in that the scanning operation of the liquid chemical nozzle 41C is not performed, and the other processes are exactly the same.

[0093] In Figure 4 (C), the situation of executing the backside heating central ejection sub-process (S3) is schematically shown, and in Figure 4 (D), the situation of executing the backside non-heating central ejection sub-process (S4) is schematically shown.

[0094] After appropriately combining and executing the backside heating scanning ejection sub-process, the backside non-heating scanning ejection sub-process, the backside heating central ejection sub-process, and the backside non-heating central ejection sub-process, for example, the backside non-heating central ejection sub-process can be finally executed to end the liquid chemical treatment process, but it is not limited thereto.

[0095] [Rinsing process and drying process]

[0096] After the liquid medicine treatment process is completed, a rinsing process and a drying process are implemented. The rinsing process and the drying process can be implemented by known methods. The rinsing process can be performed by supplying DIW as the rinsing liquid from the surface nozzle 41 for ejecting the rinsing liquid to the surface of the wafer W while rotating the wafer W. When DIW cannot be used in the rinsing process, IPA can also be used as the rinsing liquid. The rinsing process can also be performed while supplying DIW from the back nozzle 51A or 51B to the back surface of the wafer W. The drying process can be performed by rotating the wafer W at a high speed in a state where the supply of the rinsing liquid to the surface and the back surface of the wafer W is stopped. The drying process can also be performed while blowing nitrogen from the surface nozzle 41 for ejecting nitrogen to the surface of the wafer W. It is also possible to replace the rinsing liquid present on the surface of the wafer W with IPA immediately before the drying process.

[0097] Next, with reference to the Figure 6 chart (timing chart) showing an example of the processing process, an example of the processing process of the wafer W will be described.

[0098] The horizontal axis of the chart sets the processing start time point (the start time point of the pseudo-assignment process) as the time point t = 0 (seconds), and represents the elapsed time (in seconds) since then.

[0099] The vertical axis of the chart represents the following in order from top to bottom.

[0100] "PW" represents the ejection flow rate (unit: ml / min) of DIW or functional water as the pre-wetting liquid ejected to the central portion of the wafer W. The ejection flow rate is any one of 0, 150, and 700 (ml / min).

[0101] "CHM" represents the ejection flow rate (unit: ml / min) of the liquid medicine ejected from the liquid medicine nozzle 41C. The ejection flow rate is any one of 0, 150, 500, and 700 (ml / min).

[0102] "BACK HDIW" represents the ejection flow rate (unit: ml / min) of the temperature-adjusting HDIW ejected from the back nozzle 51A. The ejection flow rate is any one of 0 and 1500 (ml / min).

[0103] "NOZ POS" represents the position of the liquid medicine nozzle 41C. "H" is the original position outside the liquid receiving cup, "0" is the position directly above the rotation center of the wafer W, and "130" is the position moved 130 mm radially outward from the rotation center of the wafer W (corresponding to the aforementioned outer peripheral portion PR). The slanted line connecting "0" and "130" represents the nozzle movement.

[0104] "RPM" represents the rotational speed (revolutions per minute) of the wafer W. The rotational speed of the wafer W is any one of 0, 600, and 1000 rpm.

[0105] In addition, when changing the rotational speed and when changing the ejection flow rate, there are some rise or fall times. Therefore, the line actually representing the rotational speed etc. slopes, but such a slope is not shown in order to simplify the presentation of the graph.

[0106] First, a pseudo-distribution process is performed during the period from time point t = 0 to time point t = 4. The pseudo-distribution process is represented by "DD" at the top of the Figure 6 graph.

[0107] Next, a pre-treatment process is performed during the period from time point t = 4 to time point t = 20. The pre-treatment process is represented by "PT" at the top of the Figure 6 graph. As described before, the ejection flow rate of the pre-wetting liquid is set to 700 ml / min immediately after ejection, and when the entire surface area of the wafer W is covered with the pre-wetting liquid (about 1 to 2 seconds after the start of ejection), the ejection flow rate of the pre-wetting liquid is decreased to 150 ml / min. In addition, as another example, in the case where diluted ammonia water as functional water is used as the pre-wetting liquid, the pre-treatment process ends at the time point t = 12, and the start and end timings of the subsequent processes are each advanced by 8 seconds.

[0108] Next, a chemical liquid treatment process is performed. The chemical liquid treatment process is represented by "CT" at the top of the Figure 6 graph. The sub-processes included in the chemical liquid treatment process are also shown at the top of the Figure 6 graph. The initial sub-process is represented by "INI", the backside heating scan ejection sub-process is represented by "S1", the backside non-heating scan ejection sub-process is represented by "S2", the backside heating central ejection sub-process is represented by "S3", and the backside non-heating central ejection sub-process is represented by "S4". In the present embodiment, the combination of sub-processes is mainly determined from the viewpoint of the uniformity of the thermal history within the wafer W surface. In the present embodiment, as long as the backside non-heating scan ejection sub-process S2 is included, the combination of other sub-processes is arbitrary, and any of the sub-processes S1, S3, and S4 may not be included. The temperature of the chemical liquid ejected from the chemical liquid nozzle 41C is 55°C in this example.

[0109] Regarding the processes (rinsing process, drying process, etc.) after the chemical liquid treatment process, they are not shown in the Figure 6 graph.

[0110] Figure 7 The figure shows the temperature distribution of the wafer W when the processing process shown in the Figure 6 graph is executed. InFigure 7 In the graph, the solid line is the temperature of the central part of the wafer W, and the dashed line is the temperature of the peripheral part PR of the wafer W. In Figure 7 the upper part of the graph shows the period during which the pretreatment process PT, the chemical liquid process CT, and the sub-processes INI, S1, S2, S3, S4 of the chemical liquid process CT are performed. According to Figure 7 the graph, when the back non-heated scanning ejection sub-process S2 is performed, the value of "the temperature of the central part of the wafer W - the temperature of the peripheral part PR of the wafer W" becomes smaller, and in some cases, this value is negative (that is, the temperature of the peripheral part PR of the wafer W becomes higher than the temperature of the central part).

[0111] The processing results in the processing process shown in the graph of Figure 6 (hereinafter also referred to as "Example") are described in comparison with the processing performed by the existing process (hereinafter also referred to as "Comparative Example"). The existing process refers to a process in which no temperature-adjusting HDIW is ejected to the back surface in the pretreatment process and the chemical liquid treatment process, and 40 seconds of chemical liquid is ejected to the central part of the wafer W at 1400 ml / min in the chemical liquid treatment process.

[0112] Regarding the chemical liquid consumption in the chemical liquid process, the amount in the comparative example is 933 ml. In contrast, in the example, it is significantly reduced to 138 ml (a reduction of 85.3%). Regarding the total waste liquid amount in the chemical liquid process (equivalent to the total ejection amount of the temperature-adjusting HDIW ejected to the back surface + the total ejection amount of the chemical liquid), the amount in the comparative example is 933 ml. In contrast, in the example, it is significantly reduced to 590 ml (a reduction of 36.8%). Regarding the in-plane uniformity of the processing results, the average etching amount in the comparative example is the difference between the maximum value and the minimum value of the etching amount is and the uniformity is 16.85%. In contrast, the average etching amount in the comparative example is the difference between the maximum value and the minimum value of the etching amount is and the uniformity is 17.47%, showing some improvement.

[0113] As a modified embodiment, a temperature measuring device for measuring the temperature distribution of the wafer W (at least the temperature of the central part and the peripheral part PR of the wafer W) may also be provided in the processing unit 16. Examples of the temperature measuring device include a thermal imager, an infrared thermometer, etc. The temperature measuring device is Figure 2 indicated by the reference symbol 70 and schematically shown in

[0114] The temperature distribution of the wafer W can be adjusted by changing the processing conditions of each process in the chemical liquid treatment process, particularly the back non-heated scanning ejection sub-process (S2), based on the temperature measurement results of the temperature measuring device 70.

[0115] (1) Change the time when the liquid medicine nozzle 41C stops moving at the outer peripheral part PR of the wafer W.

[0116] (2) Change the moving speed of the liquid medicine nozzle 41C when moving the liquid landing point of the liquid medicine on the surface of the wafer W from the central part of the wafer W to the outer peripheral part PR. For example, set it to a uniform speed or make it faster as the liquid landing point of the liquid medicine approaches the outer peripheral part PR.

[0117] (3) Change the moving speed of the liquid medicine nozzle 41C when moving the liquid landing point of the liquid medicine on the surface of the wafer W from the outer peripheral part PR of the wafer W to the central part. For example, set it to a uniform speed or make it slower as the liquid landing point of the liquid medicine approaches the central part.

[0118] (4) Make the ejection flow rate of the liquid medicine ejected from the liquid medicine nozzle 41C when the liquid landing point of the liquid medicine on the surface of the wafer W is at the outer peripheral part PR larger than the ejection flow rate when the liquid landing point of the liquid medicine is at the central part.

[0119] In addition, of course, it is also possible to determine in advance the processing conditions related to the above (1) to (4) based on the temperature measured by the temperature measuring device 70 in the preliminary processing test or the etching amount distribution measured by the measuring device, and reflect it in the processing process in advance.

[0120] Next, the effects of the above-described embodiments will be described.

[0121] At the time of filing of the present application, as the liquid medicine treatment performed in a single-sheet liquid treatment apparatus ( Figure 2 an apparatus for processing substrates one by one as shown), there is a liquid medicine treatment for removing polymer residues or films in the BEOL process using an expensive organic liquid medicine. In such an organic liquid medicine, if changes occur in the concentration, composition, etc., there may be a non-negligible adverse effect on the processing result. Therefore, once the liquid medicine used for the treatment of the wafer W is discarded without being recovered and reused. Thus, there is a requirement to minimize the amount of liquid medicine used for treating one wafer W.

[0122] However, when the amount of the liquid medicine is small (that is, when the ejection flow rate of the liquid medicine is small), the in-plane uniformity of the temperature of the wafer W deteriorates. In particular, when the heated liquid medicine is ejected only to the central portion of the wafer W during the liquid medicine treatment, the smaller the ejection flow rate of the liquid medicine, the more significant the temperature drop at the outer peripheral portion of the wafer W, and the more significant the temperature difference between the central portion and the outer peripheral portion of the wafer W. As an example, when the liquid medicine at 55 °C is ejected to the central portion of the wafer W at a flow rate of 1400 ml / min, the temperature difference between the central portion and the peripheral portion of the wafer W is 5.8 °C, but when the flow rate is decreased to 200 ml / min, the temperature difference expands to 10.6 °C. If the temperature difference becomes large like this, it is possible that the liquid medicine treatment results also differ between the outer peripheral portion and the central portion to an extent that cannot be ignored. Therefore, it is not preferable to only make the ejection flow rate of the liquid medicine small without taking any countermeasures.

[0123] The above requirements for liquid medicine reduction and problems of temperature distribution exist not only in the liquid medicine treatment performed in the BEOL process, but also in the liquid medicine treatment performed in the FEOL process.

[0124] It was confirmed by experiments that: by supplying a temperature-adjusting liquid (e.g., HDIW) to the back surface of the substrate at a large flow rate, even if the amount of the liquid medicine supplied to the surface is small, it is possible to suppress the deterioration of the in-plane uniformity of the temperature of the substrate. This is because as the flow rate of the temperature-adjusting liquid increases, the influence of the temperature-adjusting liquid on the in-plane temperature distribution of the substrate becomes much larger compared to the influence of the liquid medicine.

[0125] However, in the case where a temperature-adjusting liquid (HDIW) is supplied to the back surface of the substrate while an organic liquid medicine is supplied to the front surface of the substrate, the temperature-adjusting liquid (HDIW) and the organic liquid medicine scattered from the substrate are mixed in the liquid receiving cup, and are discharged from the single-sheet liquid treatment apparatus to the factory waste liquid path in this mixed state. Therefore, if a large amount of the temperature-adjusting liquid is supplied, there is a problem that the amount of waste liquid generated when processing one substrate increases significantly, resulting in an increase in the waste liquid treatment cost. In addition, the mixed liquid of HDIW and the organic liquid medicine is disposed of as organic waste liquid.

[0126] There is also known a single-sheet liquid treatment apparatus as follows: the entire back surface of the substrate is adsorbed by a vacuum holding disk, and the in-plane temperature distribution of the substrate can be made uniform by heating the substrate with a heater embedded in the vacuum holding disk. However, if a vacuum holding disk is used, there is a possibility that contaminants adhere to the back surface of the substrate, and in addition, the contaminants adhering to the back surface of the substrate during the conveyance of the substrate or in the previous process cannot be removed simultaneously with the liquid medicine treatment on the front surface of the substrate. Therefore, there are many cases where this countermeasure cannot be applied. In addition, such a device is not a general device and is also expensive.

[0127] There is also known a single-sheet liquid processing apparatus capable of ejecting a liquid to different radial position on the back surface of a substrate. However, such an apparatus is not a general-purpose one and is also expensive.

[0128] The above-described embodiment provides a solution to the various problems described above. According to the above-described embodiment, by intermittently supplying a temperature-adjusting liquid (implemented corresponding to both the back-surface heating scanning ejection sub-step S1 and the back-surface non-heating scanning ejection sub-step S2), it is possible to reduce the amount of waste liquid discharged from the liquid processing apparatus during the chemical liquid processing. In addition, when the temperature-adjusting liquid is not supplied, by performing scanning ejection of the chemical liquid from the chemical liquid nozzle, it is possible to improve the in-plane uniformity of the temperature of the substrate (and thus the chemical liquid processing result).

[0129] All points of the embodiments disclosed herein should be considered illustrative and not restrictive. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the appended claims and their gist.

[0130] The substrate to be processed is not limited to a semiconductor wafer, and may also be various substrates used in the field of semiconductor device manufacturing, such as a glass substrate or a ceramic substrate.

[0131] Description of Reference Numerals

[0132] 31: Substrate holding unit; 33: Rotation driving unit; 41, 42, 43: First fluid supply unit; 51A, 52, 53A: Second fluid supply unit; 4: Control unit.

Claims

1. A substrate processing apparatus, comprising: a substrate holding unit that holds a substrate having a first surface and a second surface in a horizontal posture; a rotational drive unit that rotates the substrate holding unit and the substrate held by the substrate holding unit about a vertical axis; a first fluid supply unit that supplies a fluid to the first surface of the substrate held by the substrate holding unit; a second fluid supply unit that supplies a fluid to the second surface of the substrate held by the substrate holding unit; and a control unit, wherein the control unit controls the rotational drive unit, the first fluid supply unit, and the second fluid supply unit to perform the following processes: a pre-treatment process of supplying a heated fluid to the second surface of the substrate and supplying a pre-wetting liquid to the first surface of the substrate while rotating the substrate at a first rotational speed; and a chemical liquid treatment process of performing a chemical liquid treatment on the first surface by supplying a chemical liquid to the first surface of the substrate while intermittently supplying a heated fluid to the second surface of the substrate and rotating the substrate at a second rotational speed after the pre-treatment process.

2. The substrate processing apparatus according to claim 1, wherein the first rotational speed is equal to or higher than the second rotational speed.

3. The substrate processing apparatus according to claim 1, wherein the control unit causes the second fluid supply unit to perform at least two times each of the ejection of the heated fluid to the second surface of the substrate and the stop of the ejection of the heated fluid to the second surface of the substrate during the chemical liquid treatment process.

4. The substrate processing apparatus according to claim 1, wherein the first fluid supply unit includes: a nozzle that ejects the chemical liquid; and a nozzle moving mechanism that moves the nozzle, and during a first period in which the heated fluid is not supplied from the second fluid supply unit to the second surface of the substrate during the chemical liquid treatment process, the control unit causes the nozzle to eject the chemical liquid to the first surface of the substrate while moving the liquid landing point of the chemical liquid on the first surface of the substrate from the central portion of the substrate toward the outer peripheral portion by the nozzle moving mechanism.

5. The substrate processing apparatus according to claim 4, wherein during the first period, after the liquid landing point of the chemical liquid on the first surface of the substrate reaches the outer peripheral portion, the control unit stops the movement of the nozzle by the nozzle moving mechanism for a predetermined entire time, and ejects the chemical liquid from the nozzle to the outer peripheral portion of the first surface of the substrate in the stopped state.

6. The substrate processing apparatus according to claim 5, wherein the predetermined time is less than 3 seconds.

7. The substrate processing apparatus according to claim 4, wherein during the first period, the control unit sets the moving speed of the nozzle when moving the liquid landing point of the chemical liquid from the central portion of the substrate toward the outer peripheral portion to be uniform, or makes the moving speed of the nozzle increase as the liquid landing point approaches the outer peripheral portion.

8. The substrate processing apparatus according to claim 4, wherein during the first period, the control unit controls the first fluid supply unit such that the ejection flow rate of the liquid medicine ejected from the nozzle when the liquid landing point of the liquid medicine is at the outer peripheral portion is greater than the ejection flow rate of the liquid medicine ejected from the nozzle when the liquid landing point of the liquid medicine is at the central portion.

9. The substrate processing apparatus according to claim 4, wherein during the first period, after the liquid landing point of the liquid medicine on the first surface of the substrate reaches the outer peripheral portion, the control unit ejects the liquid medicine from the nozzle while moving the liquid landing point of the liquid medicine from the outer peripheral portion of the substrate to the central portion by the nozzle moving mechanism.

10. The substrate processing apparatus according to claim 9, wherein during the first period, the control unit sets the moving speed of the nozzle when moving the liquid landing point of the liquid medicine from the outer peripheral portion of the substrate to the central portion to be a constant speed, or slows down the moving speed of the nozzle as the liquid landing point approaches the central portion.

11. The substrate processing apparatus according to claim 1, wherein it further includes a temperature measuring device that can measure the surface temperature of at least the central portion and the outer peripheral portion of the first surface of the substrate held by the substrate holding unit. The first fluid supply unit includes: a nozzle that ejects the liquid medicine; and a nozzle moving mechanism that moves the nozzle. Based on the temperature measurement result of the temperature measuring device, the control unit moves the nozzle through the nozzle moving mechanism, thereby changing the liquid landing point of the liquid medicine on the first surface of the substrate.

12. The substrate processing apparatus according to claim 1, wherein the temperature of the liquid medicine supplied to the first surface of the substrate is between 30°C and 80°C.

13. The substrate processing apparatus according to claim 1, wherein the pre-wetting liquid is DIW, i.e., pure water, or functional water obtained by dissolving ammonia or ozone in DIW.

14. The substrate processing apparatus according to claim 13, wherein the pre-wetting liquid is functional water with an ammonia concentration of 10 ppm or less or functional water with an ozone concentration of 20 ppm or less.

15. The substrate processing apparatus according to claim 1, wherein the liquid medicine is a mixed solution of tetramethylammonium hydroxide (TMAH) and hydrogen peroxide water, ammonia, a mixed solution of ammonia water and hydrogen peroxide water (SC1), choline, a mixed solution of choline and hydrogen peroxide water, or TMAH.

16. A substrate processing method, comprising: a pre-treatment step of supplying a pre-wetting liquid to the first surface of the substrate and supplying a heated fluid to the second surface of the substrate while rotating the substrate at a first rotation speed; and a liquid medicine treatment step of, after the pre-treatment step, rotating the substrate at a second rotation speed and intermittently supplying a heated fluid to the second surface of the substrate while supplying a liquid medicine from a liquid medicine nozzle to the first surface of the substrate to perform liquid medicine treatment on the first surface.

17. The substrate processing method according to claim 16, wherein, during the chemical solution processing step, the ejection of the heated fluid onto the second surface of the substrate and the stop of the ejection of the heated fluid onto the second surface of the substrate are each performed at least twice.

18. The substrate processing method according to claim 16, wherein, in a first period during which the heated fluid is not supplied to the second surface of the substrate during the chemical solution processing step, while moving the chemical solution nozzle to move the liquid landing point of the chemical solution on the first surface of the substrate from the central portion of the substrate to the peripheral portion, or while moving the liquid landing point of the chemical solution from the peripheral portion of the substrate to the central portion, the chemical solution is ejected from the chemical solution nozzle onto the first surface of the substrate.

19. The substrate processing method according to claim 18, wherein, in the first period, when the liquid landing point of the chemical solution on the first surface of the substrate is at the peripheral portion, the movement of the chemical solution nozzle is stopped for a predetermined time, and the chemical solution is supplied to the peripheral portion throughout the predetermined time.

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