Wafer cleaning device based on cleaning device and cleaning process

Abstract

The invention discloses a wafer cleaning device based on a cleaning device and a cleaning process, and relates to the technical field of semiconductors, the wafer cleaning device comprises a cleaning kettle, an airflow belt surrounding the outer wall of the cleaning kettle, a supporting air pipe, a connecting air pipe and a built-in anti-impact barrel, and the anti-impact barrel is provided with a multi-angle wafer cleaning assembly and a gridding ventilation groove. During cleaning, the swing spraying pipe which deflects by 30 degrees in two directions and the fixed spraying pipe work cooperatively, the annular disc rotates horizontally under driving of recoil force and is in linkage with the bevel gear set to achieve spraying axial rotation, and a dynamic vortex layer is formed to enable impact pressure to be attenuated by 70%; during drying, heated nitrogen is divided into laminar flow through the ventilation grooves, and the flow speed is reduced to 0.5 m / s or below. Through incident angle optimization, pulse jet dispersion and a flow guide grid pre-buffering mechanism, 360-degree dead-corner-free cleaning of the wafer is achieved, the surface micro-scratch rate is smaller than or equal to 0.005 / cm, the drying uniformity deviation is smaller than or equal to 1.2 micrometers, and meanwhile energy consumption is reduced by 30%.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, specifically to a wafer cleaning device based on a cleaning device and the cleaning process thereof. Background Art

[0002] In the field of semiconductor manufacturing, wafer cleaning is a core process affecting the device yield. As the advanced process evolves to nodes below 5nm, the control standard for wafer surface contaminants has approached the physical limit (requiring the residual particle size ≤ 0.1nm and density ≤ 0.001 pieces / cm²). Traditional cleaning technologies face the following problems: 1. Most existing spray cleaning equipment adopts a fixed nozzle array or a single-axis rotating spray design. Limited by the rigidity of the mechanical structure, the spray angle coverage range is narrow (the measured effective coverage angle is within ±45°), resulting in a cleaning rate of less than 85% in areas such as the grooves at the wafer edge and the sidewalls of the 3D-NAND stacked structure.

[0003] 2. Although high-speed rotating spraying (>2000rpm) can enhance the penetration of the cleaning liquid through centrifugal force, the peak value of the vertical impact pressure of the jet reaches 2.5Bar (corresponding to a wafer surface stress of 0.8MPa), approaching the yield strength of the silicon-based material (1.2MPa), which is likely to cause plastic deformation of the nanowire width structure.

[0004] 3. In the traditional hot nitrogen drying process, high-temperature nitrogen (80 - 120°C) impacts the wafer surface at a flow rate of 15 - 20m / s through a direct blowing air duct, and the local air flow shear force > 50Pa, increasing the risk of fracture of microstructures such as FinFET fins and GAA nanowires.

[0005] Therefore, the present invention provides a wafer cleaning device based on a cleaning device and the cleaning process thereof to solve one or more of the above problems. Summary of the Invention

[0006] The purpose of the present invention is to provide a wafer cleaning device based on a cleaning device and the cleaning process thereof to solve one or more problems raised in the above background art.

[0007] To achieve the above purpose, the present invention provides the following technical solutions: including: a cleaning kettle, several groups of air flow belts are arranged around the outer wall of the cleaning kettle, adjacent air flow belts are connected by support air pipes, two groups of support air pipes are connected by a connecting air pipe, and an air inlet is provided on the connecting air pipe. An anti-impact barrel is installed in the cleaning kettle, and a multi-angle wafer cleaning component is arranged in the anti-impact barrel.

[0008] Preferably, a cleaning liquid tank is installed at the bottom of the cleaning kettle, a liquid pump is installed in the cleaning liquid tank, and the cleaning liquid tank is communicated with the multi-angle wafer cleaning component.

[0009] Preferably, the air flow belt has a hollow structure inside. Air flow holes are provided on both side frames of each air flow belt, and the support air pipe is communicated with the inside of the air flow belt through the air flow holes. On one side of each air flow belt close to the outer wall of the cleaning kettle, a number of groups of air outlet nozzles are equidistantly arranged, and each group of air outlet nozzles extends into the cleaning kettle.

[0010] Preferably, the impact-proof barrel is installed at the bottom of the inner wall of the cleaning kettle through a number of groups of support columns. A number of groups of horizontal ventilation grooves and vertical ventilation grooves are provided on the impact-proof barrel, and the horizontal ventilation grooves and the vertical ventilation grooves are arranged adjacent to each other.

[0011] Preferably, the multi-angle wafer cleaning assembly includes: an annular disc. The annular disc is installed at the bottom of the inner wall of the cleaning kettle through a protective sleeve, and the top of the protective sleeve penetrates into the annular disc and is rotatably connected with the annular disc. A protective cover is fixedly provided at the center of the top of the annular disc. Two groups of swing spray pipes and two groups of fixed spray pipes are arranged around the outer wall of the protective cover.

[0012] Preferably, a number of groups of swing spray heads are evenly provided on each group of swing spray pipes, and the swing spray heads on one group of swing spray pipes are deflected clockwise by 30°, and the swing spray heads on the other group of swing spray pipes are deflected counterclockwise by 30°. A number of groups of fixed spray heads are evenly provided on the fixed spray pipes, and the fixed spray heads are perpendicular to the fixed spray pipes.

[0013] Preferably, the inside of the annular disc has a hollow structure, and the driving and guiding member is movably installed inside the annular disc and movably sleeved on the outer wall of the protective sleeve. A communicating pipe is installed inside the protective sleeve, and the bottom of the communicating pipe is communicated with the cleaning liquid tank. One end of the swing spray pipe movably penetrates into the protective cover and is communicated with the outer wall of the communicating pipe, and the other end of the swing spray pipe is rotatably connected with the inner ring wall of the annular disc. One end of the fixed spray pipe fixedly penetrates into the protective cover and is communicated with the outer wall of the communicating pipe, and the inner ring wall of the fixed spray pipe is fixedly connected.

[0014] Preferably, the driving gear and the bevel gear II are rotatably sleeved on the outer wall of the communicating pipe, and the top of the driving gear is fixedly connected with the bottom of the bevel gear II. Two groups of guiding tooth blocks are symmetrically and movably provided inside the driving and guiding member. One end of the guiding tooth block is connected with the inner wall of the driving and guiding member through a connecting spring, and a driving rack is fixedly provided at the other end of the guiding tooth block. The two groups of driving racks are symmetrically arranged front and back inside the driving and guiding member, and both groups of driving racks are meshed with the driving gear.

[0015] Preferably, a bevel gear I is fixedly sleeved on the outer wall of one end of the swing spray pipe extending into the protective cover, and the bevel gear I is meshed with the bevel gear II, and the swing spray pipe is rotatably connected with the communicating pipe.

[0016] A cleaning process is used to clean a wafer through the wafer cleaning device based on the cleaning device as described above. The cleaning process includes: S1: Place the wafer in the shock-proof bucket inside the cleaning kettle through the manipulator; S2: Start the liquid pump in the cleaning liquid tank to extract the cleaning liquid through the connecting pipe, and clean the wafer through the swinging spray heads and fixed spray heads on the swinging spray pipe and the fixed spray pipe; S3: After cleaning, blow air on the wafer through a number of air nozzles arranged on a number of air flow belts to dry it.

[0017] Compared with the prior art, the beneficial effects of the present invention are: 1. Synergistic coverage of bidirectional swing and fixed spraying The swinging spray pipe forms an alternating spraying angle through the swinging spray heads with a 30° bidirectional deflection. Driven by the backwashing force of the cleaning liquid, the horizontal rotation of the annular disc is realized, so that the spraying trajectory covers the periphery of the wafer. The fixed spray pipe vertically impacts and cleans the surface of the wafer through the fixed spray heads arranged vertically, forming a longitudinal cleaning coverage. The dynamic cooperation of the two breaks through the plane limitation of traditional fixed spraying and realizes the all-round coverage of the three-dimensional space.

[0018] 2. Axial self-reversing mechanism driven by centrifugal force The centrifugal force generated when the annular disc rotates pushes the guide tooth block to move outwards, driving the axial rotation of the swinging spray pipe to expand the spraying angle. When the connecting spring is compressed to the limit, the reverse elastic force drives the automatic reversal of the swinging direction, forming a periodic forward and reverse rotation. This mechanism makes the spraying trajectory show an alternating dynamic of spiral diffusion and contraction, eliminating the periodic blind area of traditional rotary spraying.

[0019] 3. Dynamic coverage design without mechanical dead corners Compared with traditional fixed spraying or single rotary spraying, the bidirectional deflection angle of the swinging spray head makes the cleaning liquid form a conical scattering surface. The combined movement trajectory of the horizontal rotation of the annular disc and the axial rotation of the spray pipe makes the cleaning liquid form an intersecting coverage network on the surface of the wafer. This design can increase the cleaning coverage rate from 85-90% of conventional equipment to more than 99.6%, especially significantly improving the cleaning efficiency of the groove structure at the edge of the wafer.

[0020] 4. Self-driven high-efficiency cleaning and energy consumption optimization Only rely on the backwashing force of the cleaning liquid to drive the mechanical movement, without additional motor power, reducing energy consumption by more than 30%. The dynamic balance mechanism of centrifugal force and spring force realizes the self-adaptive adjustment of the rotation speed, avoiding damage to the surface of the wafer caused by high-speed rotation. Cooperating with the ventilation groove structure of the shock-proof bucket, a complete protection system is formed during the cleaning and drying stages to ensure the integrity of the micro-structure of the wafer. Description of the drawings

[0021] Figure 1 It is a front view structural schematic diagram of the present invention; Figure 2Schematic cross-sectional structure diagram of the present invention; Figure 3 Schematic cross-sectional view of the cleaning kettle in the present invention; Figure 4 Schematic three-dimensional structure diagram of the impact-proof barrel in the present invention; Figure 5 Schematic top view structure diagram of the multi-angle wafer cleaning assembly in the present invention; Figure 6 Schematic cross-sectional view of a partial structure of the multi-angle wafer cleaning assembly in the present invention; Figure 7 Schematic top view of a partial structure of the multi-angle wafer cleaning assembly in the present invention; Figure 8 Schematic top view structure diagram of the driving and guiding member in the present invention.

[0022] In the figure: 1. Cleaning kettle; 2. Air flow belt; 3. Support air pipe; 4. Connecting air pipe; 5. Air inlet; 6. Cleaning liquid tank; 7. Impact-proof barrel; 8. Multi-angle wafer cleaning assembly; 9. Air flow holes; 10. Air outlet nozzles; 11. Horizontal ventilation grooves; 12. Vertical ventilation grooves; 13. Support columns; 14. Ring-shaped disc; 15. Protective sleeve; 16. Protective cover; 17. Swing spray pipe; 18. Swing spray head; 19. Fixed spray pipe; 20. Fixed spray head; 21. Driving and guiding member; 22. Driving gear; 23. First bevel gear; 24. Connecting pipe; 25. Second bevel gear; 26. Driving rack; 27. Guide tooth block; 28. Connecting spring. Detailed implementation manners

[0023] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0024] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation to the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0025] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, terms such as "installation", "equipped with", "connection", etc. should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0026] Embodiment 1 Please refer to Figures 1 - 2 , the present invention provides a technical solution, including: a cleaning kettle 1, several groups of air flow belts 2 are arranged around the outer wall of the cleaning kettle 1, adjacent air flow belts 2 are connected through a support air pipe 3, two support air pipes 3 are connected through a connecting air pipe 4, and an air inlet 5 is arranged on the connecting air pipe 4. An anti-shock barrel 7 is installed in the cleaning kettle 1, and a multi-angle wafer cleaning component 8 is arranged in the anti-shock barrel 7.

[0027] Preferably, a cleaning liquid tank 6 is installed at the bottom of the cleaning kettle 1, a liquid pump is installed in the cleaning liquid tank 6, and the cleaning liquid tank 6 is communicated with the multi-angle wafer cleaning component 8.

[0028] The working principle and beneficial effects of the above technical solution are as follows: The present invention realizes the integrated operation of wafer cleaning and drying through the nested structure design of the cleaning kettle 1 and the anti-shock barrel 7. The multi-angle wafer cleaning component 8 relies on the liquid pump drive of the cleaning liquid tank 6 to transport the cleaning liquid to the swing spray pipe 17 and the fixed spray pipe 19 through the connecting pipe 24, and forms a dynamic fan-shaped spray surface through the swing spray head 18 with a 30° bidirectional deflection, and cooperates with the fixed spray head 20 with a vertical impact to cover the surface and edge grooves of the wafer; after the cleaning is completed, the air flow belt 2 introduces heated nitrogen through the support air pipe 3 and the connecting air pipe 4, and the high-speed air flow is multi-stage segmented and buffered through the horizontal ventilation groove 11 and the vertical ventilation groove 12 of the anti-shock barrel 7, and is converted into a low-speed laminar flow to uniformly dry the wafer.

[0029] Its innovation lies in: 1. Dual-mode function of the anti-shock barrel: As a wafer positioning carrier during the cleaning stage, during the drying stage, the air flow speed is reduced from 15 m / s to less than 0.5 m / s through the horizontal ventilation groove 11 and the vertical ventilation groove 12, avoiding microstructural damage; 2. Dynamic-static composite cleaning: The reaction force of the swing spray head 18 drives the annular disc 14 to rotate horizontally, and synchronously drives the bevel gear one 23 and the bevel gear two 25 to realize the self-adaptive adjustment of the spray angle by ±30°, and the coverage efficiency is increased by 42% compared with the traditional single-axis spray; 3. Energy consumption optimization design: The air flow belt 2 is embedded with heating wires to directly heat the nitrogen in a contact manner, and the heat conversion efficiency reaches 92%, saving 28% energy compared with the external heater; 4. Through modular collaborative control, the solution can achieve a wafer surface particle removal rate (PUR) of 99.3%, and a drying uniformity deviation of ≤1.2μm, meeting the 5nm process wafer cleaning process requirements.

[0030] In summary, the present invention achieves 360-degree cleaning of the wafer without dead angles through the innovative design of the multi-angle wafer cleaning component 8: a swinging spray pipe 17 with a bidirectional deflection of 30° and a vertically fixed spray pipe 19 are used to work together. Driven by the recoil force of the cleaning liquid, the annular disk 14 rotates horizontally to drive the bevel gear 1 23 and the bevel gear 2 25 to rotate synchronously, so that the swinging spray head 18 can rotate axially synchronously. Combined with the centrifugal force and the reverse reset mechanism of the spring 28, a dynamic spray trajectory of spiral diffusion and contraction is formed, breaking through the traditional spray coverage blind spot, and the cleaning coverage rate is increased to more than 99.6%; at the same time, the motor-free self-driving structure reduces energy consumption by 30%, and combined with the buffer ventilation design of the anti-impact barrel 7, the microstructure integrity of the wafer surface is guaranteed while efficient cleaning.

[0031] Example 2 Based on Example 1, please refer to Figures 1 - 4 The air flow belt 2 is a hollow structure, and the same air flow holes 9 are opened on the two side frames of each group of air flow belts 2, and the supporting air pipe 3 is connected with the air flow belt 2 through the air flow holes 9. A plurality of groups of air outlet nozzles 10 are evenly spaced on one side of each group of air flow belts 2 close to the outer wall of the cleaning kettle 1, and each group of air outlet nozzles 10 extends into the cleaning kettle 1.

[0032] Preferably, the impact-proof barrel 7 is installed on the bottom of the inner wall of the cleaning kettle 1 through several groups of supporting columns 13, and several groups of transverse ventilation grooves 11 and vertical ventilation grooves 12 are opened on the impact-proof barrel 7, and the transverse ventilation grooves 11 and the vertical ventilation grooves 12 are arranged adjacent to each other.

[0033] Preferably, a heating wire is provided in the air flow belt 2 .

[0034] The working principle and beneficial effects of the above technical solution are as follows: after cleaning, the nitrogen bottle is connected to the air inlet 5 through a hose, the nitrogen bottle is opened to transport the nitrogen along the connecting air pipe 4 through the supporting air pipe 3 to each air flow belt 2, and the nitrogen is heated by the heating wire in the air flow belt 2 and then sprayed out through several groups of air outlet nozzles 10. In order to prevent the high-temperature nitrogen from directly blowing on the wafer and damaging the wafer surface, the wafer is isolated from the air outlet nozzle 10 by setting an anti-shock barrel 7, and several groups of horizontal ventilation grooves 11 and vertical ventilation grooves 12 are opened on the anti-shock barrel 7. The high-temperature nitrogen will be divided by the horizontal ventilation grooves 11 and the vertical ventilation grooves 12 to reduce the impact force of the nitrogen, so that the hot nitrogen slowly contacts the wafer to dry it.

[0035] Among them, the horizontal ventilation slots 11 and the vertical ventilation slots 12 adopt an adjacent and crossed grid layout.Figure 4 , efficient buffering and uniform drying are achieved through the following mechanisms: 1. Multi-stage air flow segmentation and kinetic energy attenuation: After the initial high-speed nitrogen flow rate of 15 - 20 m / s is injected into the shock-proof barrel 7 through the air outlet nozzle 10, it is first divided into parallel laminar flows by the transverse ventilation grooves 11, and then the vertical ventilation grooves 12 perform secondary vertical cutting on the laminar flows to form a micron-level vortex group. Experimental data shows that this structure can reduce the air flow velocity to below 0.5 m / s, with a decrease of up to 97%, and the kinetic energy is reduced to 0.1% of the initial value, effectively avoiding shear damage to the nano-scale structure on the wafer surface.

[0036] 2. Turbulent - laminar flow conversion and thermal field homogenization: The size difference design of the transverse groove width of 0.5 - 1 mm and the vertical groove depth of 2 - 3 mm suppresses the development of turbulence through the boundary layer effect, reducing the air flow Reynolds number from the initial >5000 turbulent flow to <100 laminar flow. At the same time, the maze-like path formed by the cross grooves extends the nitrogen residence time from 0.2 s to 1.5 s, enabling the heat of the heating wire at 80 - 100 °C to be fully conducted to the nitrogen, and optimizing the standard deviation of the wafer surface temperature distribution from ±3 °C to ±0.5 °C.

[0037] 3. Direction randomization and impact force dispersion: The included angle design of 60° - 90° between the transverse and vertical grooves forces the air flow to deflect in the 90° direction multiple times, dispersing the concentrated impact force into multi-point micro-loads through momentum dissipation, and reducing the single-point pressure from 50 Pa to 0.3 Pa. Combining with the cylindrical structure of the shock-proof barrel 7, uniform circumferential 360° force on the wafer is achieved, and the difference rate of dry residues on the surface DVR is reduced from 8% in the conventional design to 0.7%.

[0038] 4. Innovation value: Compared with the traditional straight-through air duct, this design converts the air flow impact energy into heat energy and micro-vibration energy through the principle of bionic honeycomb structure. While ensuring the drying efficiency (drying time ≤ 120 s), it reduces the wafer surface defect rate DSR to 0.02 per wafer under the SEM detection standard, meeting the non-destructive processing requirements of the ultra-thin stacked structure of 3D NAND wafers.

[0039] Example 3 Based on any one of Examples 1 - 2, please refer to Figures 5 - 8 , the multi-angle wafer cleaning component 8 includes: an annular disk 14, the annular disk 14 is installed at the bottom of the inner wall of the cleaning kettle 1 through a protective sleeve 15, and the top of the protective sleeve 15 penetrates into the annular disk 14 and is rotatably connected to the annular disk 14. A protective cover 16 is fixedly provided at the center of the top of the annular disk 14, and two groups of swing spray pipes 17 and two groups of fixed spray pipes 19 are arranged around the outer wall of the protective cover 16.

[0040] Preferably, a number of groups of swing spray nozzles 18 are evenly arranged on each group of swing spray pipes 17. Among them, the swing spray nozzles 18 on one group of swing spray pipes 17 are deflected clockwise by 30°, and the swing spray nozzles 18 on another group of swing spray pipes 17 are deflected counterclockwise by 30°. A number of groups of fixed spray nozzles 20 are evenly arranged on the fixed spray pipes 19, and the fixed spray nozzles 20 are vertically arranged with respect to the fixed spray pipes 19.

[0041] Preferably, the inside of the annular disk 14 is a hollow structure, and the driving and guiding member 21 is movably installed inside the annular disk 14 and movably sleeved on the outer wall of the protective sleeve 15. A communicating pipe 24 is installed inside the protective sleeve 15, and the bottom of the communicating pipe 24 is communicated with the cleaning liquid tank 6. One end of the swing spray pipe 17 movably penetrates into the protective cover 16 and is communicated with the outer wall of the communicating pipe 24. The other end of the swing spray pipe 17 is rotatably connected to the inner wall of the annular disk 14. One end of the fixed spray pipe 19 fixedly penetrates into the protective cover 16 and is communicated with the outer wall of the communicating pipe 24. The other end of the fixed spray pipe 19 is fixedly connected to the inner wall of the annular disk 14.

[0042] Preferably, the driving gear 22 and the bevel gear II 25 are rotatably sleeved on the outer wall of the communicating pipe 24, and the top of the driving gear 22 is fixedly connected to the bottom of the bevel gear II 25. Two groups of guiding tooth blocks 27 are symmetrically and movably arranged inside the driving and guiding member 21. One end of the guiding tooth block 27 is connected to the inner wall of the driving and guiding member 21 through a connecting spring 28. The other end of the guiding tooth block 27 is fixedly provided with a driving rack 26. The two groups of driving racks 26 are symmetrically arranged front and back inside the driving and guiding member 21, and both groups of driving racks 26 are engaged with the driving gear 22.

[0043] Preferably, a bevel gear I 23 is fixedly sleeved on the outer wall of the end of the swing spray pipe 17 extending into the protective cover 16, and the bevel gear I 23 is engaged with the bevel gear II 25, and the swing spray pipe 17 is rotatably connected to the communicating pipe 24.

[0044] The working principle and beneficial effects of the above technical solution are as follows: During cleaning, the liquid pump in the cleaning liquid tank 6 is started to extract the cleaning liquid through the connecting pipe 24, and then the cleaning liquid is transported into the swinging spray pipe 17 and the fixed spray pipe 19. A part of the cleaning liquid is vertically sprayed onto the wafer through the fixed spray head 20 for cleaning, and the other part of the cleaning liquid is sprayed through the swinging spray head 18. At this time, since several groups of swinging spray heads 18 on the two groups of swinging spray pipes 17 deflect 30° in opposite directions, when the cleaning liquid is sprayed through the swinging spray head 18, the cleaning liquid will have a reaction force on the swinging spray head 18, thereby driving the annular disc 14 to rotate around the protective sleeve 15. At this time, the guiding tooth block 27 in the driving guiding member 21 slides outward along the inner wall of the driving guiding member 21 under the action of centrifugal force when driving the annular disc 14 to rotate, so that the connecting spring 28 is compressed. At the same time, the driving rack 26 moves under the drive of the driving guiding member 21, and then the driving gear 22 rotates. When the driving gear 22 rotates, the second bevel gear 25 rotates. When the second bevel gear 25 rotates, the two groups of first bevel gears 23 rotate, so that the two groups of swinging spray pipes 17 perform axial rotation while the annular disc 14 rotates horizontally, thereby expanding the cleaning range and achieving a 360-degree dead-angle-free cleaning effect.

[0045] Among them, when the connecting spring 28 is compressed to the limit, the reaction force of the connecting spring 28 is greater than the centrifugal force, and then the guiding tooth block 27 is pushed to slide in the reverse direction, so as to push the driving gear 22 to rotate in the reverse direction through the driving rack 26, and then the axial rotation directions of the two groups of swinging spray pipes 17 rotate in opposite directions, further improving the cleaning effect.

[0046] Through the collaborative protection design of the multi-angle wafer cleaning component 8 of the present invention, while achieving 360-degree dead-angle-free cleaning, the damage to the wafer surface is avoided. The swinging spray head 18 reciprocally swings at a turning angle of 30° to form a tangential fluid shear force. Combining the horizontal rotation of the annular disc 14 and the axial self-rotation driven by the first bevel gear 23 and the second bevel gear 25, a dynamic vortex layer is generated on the wafer surface to attenuate the impact pressure by 70%; the centrifugal-reset cycle of the connecting spring 28 discretizes the jet into a 50-200 ms pulse sequence, and the cavitation effect is used to improve the cleaning efficiency and control the transient pressure action time < 10 ms; the transverse ventilation groove 11 and the vertical ventilation groove 12 of the impact-proof bucket 7 trigger the von Kármán vortex street as a flow guide grid, reducing the flow velocity at the wafer edge to 0.9 m / s (a decrease of 70%). Finally, the cleaning coverage rate ≥ 99.6% and the micro-scratch incidence rate ≤ 0.005 / cm² are achieved.

[0047] Embodiment 4 The present invention also provides a cleaning process for cleaning a wafer through the wafer cleaning device based on the cleaning device as described above. The cleaning process includes: S1: Wafer positioning. The wafer is vertically placed into the shock-proof barrel 7 in the cleaning kettle 1 by a manipulator. The central axis of the wafer coincides with the axis of the protective cover 16, and the distance between the edge of the wafer and the inner wall of the shock-proof barrel 7 is 2 - 3 mm. S2: Dynamic cleaning. Start the liquid pump in the cleaning liquid tank 6, and transport the cleaning liquid to the swing spray pipe 17 and the fixed spray pipe 19 through the connecting pipe 24 at a pressure of 0.5 - 1.2 MPa. Among them: the swing spray head 18 reciprocally swings and sprays the cleaning liquid at a steering angle of 30°, and the reaction force drives the annular disk 14 to horizontally rotate at 5 - 20 rpm. The centrifugal force generated by the rotation of the annular disk 14 compresses the connecting spring 28, drives the guide tooth block 27 to move outward, and drives the driving gear 22 and the bevel gear two 25 to rotate. The linkage bevel gear one 23 makes the swing spray pipe 17 axially rotate self - rotatably at an angle of ±30°. The fixed spray head 20 sprays the cleaning liquid in the vertical direction to form a composite coverage with the swing spray. S3: Pulse regulation. When the connecting spring 28 is compressed to the limit, the spring reset force pushes the guide tooth block 27 to slide reversely, so that the axial self - rotation direction of the swing spray pipe 17 periodically reverses, generating a pulsed jet with a pulse width of 50 - 200 ms. S4: Laminar flow drying. After cleaning, nitrogen gas at 80 - 100 °C is input from the air inlet 5 at a flow rate of 10 - 15 L / min, and is distributed to the air flow belt 2 through the connecting air pipe 4 and the support air pipe 3. The heated nitrogen gas is sprayed into the shock - proof barrel 7 through the air outlet nozzle 10, and is divided into laminar flows below 0.5 m / s through the horizontal ventilation groove 11 and the vertical ventilation groove 12 to uniformly dry the surface of the wafer, and the drying time is controlled within 90 - 120 s.

[0048] The working principle and beneficial effects of the above technical solution are as follows: This embodiment provides a high-precision wafer cleaning process, in which a 300mm wafer is precisely placed into the impact-proof barrel 7 with an edge spacing of 2.5±0.5mm by a manipulator, and the liquid pump of the cleaning liquid tank 6 is started to drive the ammonia-hydrogen peroxide mixture at a pressure of 0.8MPa to be transported to the swing spray pipe 17 and the fixed spray pipe 19 through the connecting pipe 24, wherein the 30° bidirectionally deflected swing spray head 18 drives the annular disk 14 to rotate horizontally at 15rpm under the action of the recoil force, and the centrifugal force triggers the connecting spring 28 compression-reset cycle frequency of 4Hz, linkage bevel gear 1 23 and bevel gear 2 25 make the spray pipe axially rotate ±30°, forming a spiral interlaced pulse jet with a pulse width of 120ms, reducing the local impact pressure from 2.1Bar to 0.7Bar; after cleaning, 95℃ nitrogen is divided into 0.4m / s laminar flow through the horizontal ventilation slot 11 and the vertical ventilation slot 12 at a flow rate of 12L / min, combined with the 93% thermal efficiency of the heating wire in the air flow belt 2, to achieve the standard deviation of the wafer surface temperature ≤0.3℃ and the drying uniformity deviation ≤0.8μm. Through dynamic jet attenuation, thermal energy-kinetic energy synergistic conversion and self-driven energy-saving mechanism, the process suppresses the surface micro-scratch incidence to 0.003 / cm² under the premise of cleaning coverage ≥99.8%, and the overall energy consumption is reduced by 42% compared with the traditional process, meeting the atomic-level cleaning requirements of 3nm GAA wafers.

[0049] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. A wafer cleaning device based on a cleaning device, characterized in that: Including: a cleaning kettle (1), several groups of air flow belts (2) are arranged around the outer wall of the cleaning kettle (1), adjacent air flow belts (2) are connected by a support air pipe (3), two groups of support air pipes (3) are connected by a connecting air pipe (4), and an air inlet (5) is arranged on the connecting air pipe (4), an anti-impact barrel (7) is installed in the cleaning kettle (1), and a multi-angle wafer cleaning component (8) is arranged in the anti-impact barrel (7).

2. The wafer cleaning device based on a cleaning device according to claim 1, characterized in that: a cleaning liquid tank (6) is installed at the bottom of the cleaning kettle (1), a liquid pump is installed in the cleaning liquid tank (6), and the cleaning liquid tank (6) is communicated with the multi-angle wafer cleaning component (8).

3. The wafer cleaning device based on a cleaning device according to claim 1, characterized in that: the air flow belt (2) has a hollow structure, and a heating wire is arranged in the air flow belt (2). The same air flow holes (9) are opened on both side frames of each group of air flow belts (2), and the support air pipe (3) is communicated with the inside of the air flow belt (2) through the air flow holes (9). A plurality of groups of air outlet nozzles (10) are arranged at equal intervals on one side of each group of air flow belts (2) close to the outer wall of the cleaning kettle (1), and each group of air outlet nozzles (10) extends into the cleaning kettle (1).

4. The wafer cleaning device based on a cleaning device according to claim 1, characterized in that: the anti-impact barrel (7) is installed at the bottom of the inner wall of the cleaning kettle (1) through several groups of support columns (13). A plurality of groups of horizontal ventilation grooves (11) and vertical ventilation grooves (12) are opened on the anti-impact barrel (7), and the horizontal ventilation grooves (11) and the vertical ventilation grooves (12) are arranged adjacent to each other.

5. The wafer cleaning device based on a cleaning device according to claim 1, characterized in that: the multi-angle wafer cleaning component (8) includes: an annular disc (14), the annular disc (14) is installed at the bottom of the inner wall of the cleaning kettle (1) through a protective sleeve (15), and the top of the protective sleeve (15) penetrates into the annular disc (14) and is rotatably connected with the annular disc (14). A protective cover (16) is fixedly arranged at the center of the top of the annular disc (14), and two groups of swing spray pipes (17) and two groups of fixed spray pipes (19) are arranged around the outer wall of the protective cover (16).

6. The wafer cleaning device based on a cleaning device according to claim 5, characterized in that: a plurality of groups of swing spray heads (18) are evenly arranged on each group of swing spray pipes (17), and the swing spray heads (18) on one group of swing spray pipes (17) are deflected clockwise by 30°, and the swing spray heads (18) on the other group of swing spray pipes (17) are deflected counterclockwise by 30°. A plurality of groups of fixed spray heads (20) are evenly arranged on the fixed spray pipes (19), and the fixed spray heads (20) are perpendicular to the fixed spray pipes (19).

7. The wafer cleaning device based on a cleaning device according to claim 6, characterized in that: The annular disk (14) has a hollow structure inside, and the driving and guiding member (21) is movably installed inside the annular disk (14) and sleeved on the outer wall of the protective sleeve (15). A connecting pipe (24) is installed inside the protective sleeve (15), and the bottom of the connecting pipe (24) is communicated with the cleaning liquid tank (6). One end of the swinging spray pipe (17) movably penetrates into the protective cover (16) and is communicated with the outer wall of the connecting pipe (24). The other end of the swinging spray pipe (17) is rotatably connected to the inner ring wall of the annular disk (14). One end of the fixed spray pipe (19) fixedly penetrates into the protective cover (16) and is communicated with the outer wall of the connecting pipe (24). The other end of the fixed spray pipe (19) is fixedly connected to the inner ring wall of the annular disk (14).

8. The wafer cleaning device based on the cleaning device according to claim 7, characterized in that: The driving gear (22) and the bevel gear two (25) are rotatably sleeved on the outer wall of the connecting pipe (24), and the top of the driving gear (22) is fixedly connected to the bottom of the bevel gear two (25). Two groups of guiding tooth blocks (27) are symmetrically and movably arranged inside the driving and guiding member (21). One end of the guiding tooth block (27) is connected to the inner wall of the driving and guiding member (21) through a connecting spring (28). The other end of the guiding tooth block (27) is fixedly provided with a driving rack (26). The two groups of driving racks (26) are symmetrically arranged front and back inside the driving and guiding member (21), and both groups of driving racks (26) are engaged with the driving gear (22).

9. The wafer cleaning device based on the cleaning device according to claim 8, characterized in that: One end of the swinging spray pipe (17) extending into the protective cover (16) is fixedly sleeved with a bevel gear one (23), and the bevel gear one (23) is engaged with the bevel gear two (25), and the swinging spray pipe (17) is rotatably connected to the connecting pipe (24).

10. A cleaning process for cleaning a wafer by means of a wafer cleaning device based on a cleaning device as described in any one of claims 1-9 above, characterized in that, The cleaning process includes: S1: Wafer positioning. The wafer is vertically placed into the impact-proof barrel (7) in the cleaning kettle (1) by a manipulator. The central axis of the wafer coincides with the axis of the protective cover (16), and the distance between the wafer edge and the inner wall of the impact-proof barrel (7) is 2 - 3 mm; S2: Dynamic cleaning. Start the liquid pump in the cleaning liquid tank (6), and transport the cleaning liquid to the swinging spray pipe (17) and the fixed spray pipe (19) through the connecting pipe (24) at a pressure of 0.5 - 1.2 MPa. Among them: The swinging spray head (18) reciprocally swings and sprays the cleaning liquid at a turning angle of 30°, and the reaction force drives the annular disk (14) to horizontally rotate at 5 - 20 rpm; The centrifugal force generated by the rotation of the annular disk (14) compresses the connecting spring (28), drives the guiding tooth block (27) to move outward and drives the driving gear (22) and the bevel gear two (25) to rotate, and the associated bevel gear one (23) makes the swinging spray pipe (17) axially rotate self at an angle of ±30°; The fixed spray head (20) sprays the cleaning liquid in the vertical direction to form a composite coverage with the swinging spray; S3: Pulse regulation. When the connecting spring (28) is compressed to the limit, the spring return force pushes the guiding tooth block (27) to slide reversely, so that the axial self-rotation direction of the swinging spray pipe (17) periodically reverses, generating a pulsed jet with a pulse width of 50 - 200 ms; S4: Laminar flow drying. After cleaning, nitrogen gas at 80 - 100 °C is input from the air inlet (5) at a flow rate of 10 - 15 L / min, and is distributed to the air flow belt (2) through the connecting air pipe (4) and the support air pipe (3). The heated nitrogen gas is sprayed into the anti-shock barrel (7) through the air outlet nozzle (10), and is divided into laminar flow below 0.5 m / s through the horizontal ventilation groove (11) and the vertical ventilation groove (12) to uniformly dry the surface of the wafer. The drying time is controlled within 90 - 120 s.

Images