Method for manufacturing electronic device

Abstract

The invention provides a manufacturing method of an electronic device, which comprises the following steps of: providing a first substrate, and arranging an electronic element on the first substrate; inspecting at least a part of the electronic components on the first substrate to identify a first defective electronic component and a first normal electronic component; selectively transferring the first normal electronic component from the first substrate to a first position of the second substrate; and transferring the second normal electronic component to a second position of the second substrate, wherein the second position corresponds to the position of the first defective electronic component on the first substrate.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing an electronic device, and more particularly to a method for manufacturing an electronic device capable of improving manufacturing yield. Background Art

[0002] With the evolution and development of electronic devices, electronic devices have become indispensable items in today's society. For example, a display device in an electronic device may have a display function to provide information transmission and / or image display.

[0003] In the manufacturing process of an electronic device, electronic components can be disposed on a substrate through a transfer process to improve the manufacturing speed and output of the electronic device. However, under the trend of miniaturization of electronic components, the yield of electronic components disposed through the transfer process decreases as the size of the electronic components decreases, resulting in a decrease in the yield of the electronic device. Therefore, it is necessary to improve the manufacturing method of the electronic device to improve the yield of the electronic device. Summary of the Invention

[0004] An object of the present invention is to provide a method for manufacturing an electronic device.

[0005] The present invention provides a method for manufacturing an electronic device, which includes the following steps: providing a first substrate with electronic components disposed thereon; inspecting at least a part of the electronic components on the first substrate to identify first defective electronic components and first normal electronic components; selectively transferring the first normal electronic components from the first substrate to a first position on a second substrate; and transferring second normal electronic components to a second position on the second substrate, where the second position corresponds to the position of the first defective electronic components on the first substrate. Brief Description of the Drawings

[0006] Figure 1 And Figure 2 is a flowchart of a method for manufacturing an electronic device according to an embodiment of the present invention.

[0007] Figure 3 is a cross-sectional schematic view of a first inspection process of a method for manufacturing an electronic device according to an embodiment of the present invention.

[0008] Figure 4 is a cross-sectional schematic view of a first transfer process of a method for manufacturing an electronic device according to an embodiment of the present invention.

[0009] Figure 5 is a cross-sectional schematic view of a photomask, a first substrate, electronic components, and a second substrate of a method for manufacturing an electronic device according to an embodiment of the present invention.

[0010] Figure 6Top view schematic diagrams of a photomask, a first substrate, and electronic components in a manufacturing method of an electronic device according to another embodiment of the present invention.

[0011] Figure 7 With Figure 6 Cross-sectional schematic diagram of a first transfer process using the shown photomask, first substrate, and electronic components.

[0012] Figure 8 Cross-sectional schematic diagram of a first transfer process in a manufacturing method of an electronic device according to an embodiment of the present invention.

[0013] Figure 9 Cross-sectional schematic diagram of a first transfer process in a manufacturing method of an electronic device according to another embodiment of the present invention.

[0014] Figure 10 Cross-sectional schematic diagram of a first transfer process in a manufacturing method of an electronic device according to still another embodiment of the present invention.

[0015] Figure 11 Cross-sectional schematic diagram of testing a laser beam in a manufacturing method of an electronic device according to some embodiments of the present invention.

[0016] Figure 12 Top view schematic diagram of an alignment structure used in a first transfer process in a manufacturing method of an electronic device according to an embodiment of the present invention.

[0017] Figure 13 Cross-sectional schematic diagram of the result of a first transfer process and the configuration of a first repair process in a manufacturing method of an electronic device according to an embodiment of the present invention.

[0018] Figure 14 Cross-sectional schematic diagram of a second inspection process and a second repair process in a manufacturing method of an electronic device according to an embodiment of the present invention.

[0019] Figure 15 For Figure 14 Top view schematic diagram of a second inspection process and a second repair process in a manufacturing method of an electronic device of the shown embodiment.

[0020] Figure 16 Top view schematic diagram of a second repair process in a manufacturing method of an electronic device according to another embodiment of the present invention.

[0021] Figure 17 Cross-sectional schematic diagram of a second substrate and electronic components of an electronic device according to an embodiment of the present invention.

[0022] Figure 18 Cross-sectional schematic diagram of a forming process of a filling layer in a manufacturing method of an electronic device according to an embodiment of the present invention.

[0023] Figure 19A cross-sectional schematic view of the fourth inspection process of the manufacturing method of an electronic device according to an embodiment of the present invention.

[0024] Figure 20 A cross-sectional schematic view of the fourth repair process of the manufacturing method of an electronic device according to an embodiment of the present invention.

[0025] Figure 21 A cross-sectional schematic view of the fourth repair process of the manufacturing method of an electronic device according to another embodiment of the present invention.

[0026] Figure 22 A cross-sectional schematic view of the fourth repair process of the manufacturing method of an electronic device according to still another embodiment of the present invention.

[0027] Explanation of reference numerals: 110, 110', 110"-first substrate; 112, 112', 112"-first alignment structure; 120-first adhesive layer; 120a-first part; 120b-second part; 210-second substrate; 212, 212', 212"-second alignment structure; 222-connection pad; 222G-connection pad group; 224-conductive trace; 230-insulating layer; 240-second adhesive layer; 250-filling layer; 252-filling material; 310-third substrate; A1, A2, D1, D2, S5-distance; AC-absorber; AL-luminescent layer; BLS-black material; D, D', D"-spacing; DMC-dummy component; DP1-first inspection process; DP2-second inspection process; DP4-fourth inspection process; DR-preset area; DS1, DS2-damaged structure; DTT1, DTT2, DTT4-detector; E1, E2-electrode; E3, E4-electrically controlled electrode; EC, EC', EC"-electronic component; ECd1-first defective electronic component; ECd2-second defective electronic component; ECd4-fourth defective electronic component; ECn1-first normal electronic component; ECn2-second normal electronic component; ECn3-third normal electronic component; ECo-other normal electronic components element; EG-energy; ELD-emitter; L-laser beam; LSL-light shielding layer; MK-mask; ML-electrically controlled dielectric layer; MOB-opposing mask substrate; MSB-mask substrate; MT-manufacturing method; NZ-nozzle; OP-opening; OS-light shielding structure; P1-first position; P2-second position; PD-defective position; PE-empty position; PL-redundant position; PP-position; PS-protruding structure; PTR-pre-rotation area; PU-unit; RA-adhesive layer; RLD-receiver; RMP-removal process; RP4-fourth repair process; RSB-repair substrate; S1, S2, S3, S4-size Inch; SM1-first semiconductor layer; SM2-second semiconductor layer; ST1, ST2, ST3, ST4, ST5, ST6, ST7, ST8, ST9, ST10, ST11, ST12, ST13, ST13_1, ST13_2, ST13_3, ST13_4, ST13_5, ST14, ST15, ST16-steps; SUT-shading member; TAF-test adhesive layer; TP1-first transfer process; TP3-third transfer process; TSB-test substrate; TT1-first test; TT2-second test; TU1, TU2-transfer units; X, Y, Z-directions. DETAILED DESCRIPTION

[0028] The present invention can be understood by referring to the following detailed description and in conjunction with the accompanying drawings. It should be noted that, for the convenience of the reader's understanding and the simplicity of the drawings, only a part of the electronic device is shown in the multiple drawings of the present invention, and the specific elements in the drawings are not drawn in actual proportion. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of the present invention.

[0029] Throughout the specification of the present invention and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art should understand that electronic device manufacturers may use different names to refer to the same element. The present invention is not intended to distinguish between elements that have the same function but different names.

[0030] In the specification and claims of the present invention, words such as "comprising", "containing", "having", etc. are open-ended terms, and thus should be interpreted as meaning "including but not limited to...". Therefore, when the terms "comprising", "containing" and / or "having" are used in the description of the present invention, they specify the presence of the corresponding features, regions, steps, operations and / or components, but do not exclude the presence of one or more corresponding features, regions, steps, operations and / or components.

[0031] The directional terms mentioned in the present invention, such as "upper", "lower", "front", "rear", "left", "right", etc., are only with reference to the directions in the drawings. Therefore, the directional terms used are for illustration and not for limiting the present invention. In the drawings, each drawing shows the general characteristics of the method, structure and / or material used in a specific embodiment. However, these drawings should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses and positions of each film layer, region and / or structure may be reduced or enlarged.

[0032] When a corresponding component (such as a film layer or a region) is referred to as "on another component", it may be directly on the other component, or there may be other components between the two. On the other hand, when a component is referred to as "directly on another component", there are no components between the two. In addition, when a component is referred to as "on another component", there is an up-and-down relationship between the two in the vertical direction, and this component may be above or below the other component, and this up-and-down relationship depends on the orientation of the device.

[0033] It should be understood that when a component or film layer is referred to as "connected to" another component or film layer, it can be directly connected to this other component or film layer, or there are intervening components or film layers between the two. When a component is referred to as "directly connected to" another component or film layer, there are no intervening components or film layers between the two. Additionally, when a component is referred to as "coupled to another component (or its variants)", it can be directly connected to this other component or indirectly connected (such as electrically connected) to this other component through one or more components.

[0034] In the present invention, when a component is "electrically connected" to another component, an electrical signal can flow between the two components at least at one moment during normal operation; when a component is "coupled" to another component, an electrical signal can flow between the two components within the specified time. In the present invention, when a component "disconnects" another component, an electrical signal cannot flow between the two components within the specified time.

[0035] It should be understood that in the specification and claims, the term "horizontal direction" refers to the direction parallel to the horizontal plane, the term "horizontal plane" refers to the surface parallel to directions X and Y in the drawings, the term "vertical direction" refers to the direction parallel to direction Z in the drawings, and directions X, Y, and Z are perpendicular to each other. In the specification and claims, the term "top view" refers to the viewing result when viewed along the vertical direction.

[0036] It should be understood that in the specification and claims, the term "overlap" means the overlap of two components in the Z direction, and unless otherwise specified, the term "overlap" includes partial overlap or complete overlap.

[0037] The terms "approximate" or "the same" are generally interpreted as within the range of plus or minus 20% of the given value, or within the range of plus or minus 10%, plus or minus 5%, plus or minus 3%, plus or minus 2%, plus or minus 1%, or plus or minus 0.5% of the given value.

[0038] The ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify elements. They do not imply or represent any previous ordinal numbers of the element (or elements), nor do they represent the order of one element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish an element with a certain name from another element with the same name. The same terms may not be used in the claims and the specification. Accordingly, the first component in the specification may be the second component in the claim.

[0039] It should be noted that, without departing from the spirit of the present invention, features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the spirit of the invention or conflict with each other, they can be arbitrarily mixed and used.

[0040] In the present invention, the electronic device may include a display device, a light-emitting device, an antenna device, a sensing device, a splicing device, or any combination thereof, but not limited thereto. The display device may be a non-self-luminous display or a self-luminous display according to requirements, and may be a color display or a monochrome display according to requirements. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device. The sensing device may be a sensing device for sensing capacitance, light, heat energy, or ultrasonic waves. The splicing device may be a display splicing device or an antenna splicing device, but not limited thereto. The electronic components in the electronic device may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, integrated circuits, etc. The diode may include a light emitting diode (LED) or a photodiode. The light emitting diode may include, for example, an organic light emitting diode (OLED), a mini light emitting diode (mini LED), a micro light emitting diode (micro LED), or a quantum dot light emitting diode (quantum dot LED), but not limited thereto. The transistor may include, for example, a top gate thin film transistor, a bottom gate thin film transistor, or a dual gate thin film transistor, but not limited thereto. The electronic device may also include a fluorescence material, a phosphor material, a quantum dot (QD) material, or other suitable materials according to requirements, but not limited thereto. The electronic device may have peripheral systems such as a driving system, a control system, a light source system, etc. to support the devices and components in the electronic device.

[0041] It should be noted that, hereinafter, an electronic device with a display function is taken as an example for illustration.

[0042] Please refer to Figure 1 , Figure 1 and Figure 2 is a flowchart of a manufacturing method of an electronic device according to an embodiment of the present invention. It should be noted that the manufacturing method MT of the present invention is not limited to the following text and drawings. In some embodiments, any other suitable steps may be added before or after one of the existing steps of the manufacturing method MT, and / or some steps may be carried out simultaneously or separately. In some embodiments, the flow order of the manufacturing method MT may be changed according to requirements.

[0043] In the following manufacturing method MT, the formation process of the film layer and / or structure may include, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), coating process, other suitable processes, or a combination thereof. In the following manufacturing method MT, the patterning process may include, for example, a photolithography process, an etching process, any other suitable process, or a combination thereof, where the etching process may be a wet etching process, a dry etching process, any other suitable etching process, or a combination thereof.

[0044] In the following manufacturing method MT, the inspection process may inspect the target component in any suitable manner to identify whether the target component is a normal component or a defective component. When the target component meets all inspection specifications, it is identified as a normal component, and when the target component does not meet one of the inspection specifications, it is identified as a defective component. In the present invention, a normal component is an electronic unit that can operate normally, and a defective component is an electronic unit that cannot operate normally. For example, if the electronic unit is a light-emitting component, a normal light-emitting component can emit light according to a given gray scale, while a defective light-emitting component cannot emit light according to the given gray scale (e.g., dark spots, constant brightness, and / or flickering may occur on the defective light-emitting component). In the following manufacturing method MT, the repair process may process the defective component in any suitable manner to convert / replace the defective component into a normal component, remove the defective component, and / or disable the defective component.

[0045] Please refer to Figure 3 , and also refer to Figure 1 , Figure 3 is a cross-sectional schematic diagram of the first inspection process of the manufacturing method MT of the electronic device according to an embodiment of the present invention. As Figure 1 and Figure 3As shown, in step ST1 of the manufacturing method MT of the electronic device, the first substrate 110 is provided, and a plurality of electronic components EC are disposed on the first substrate 110. The first substrate 110 can be rigid or flexible, and the first substrate 110 can correspondingly include suitable materials according to its type. For example, the first substrate 110 can include glass, quartz, ceramic, sapphire, polymers (such as polyimide (PI), polyethylene terephthalate (PET)), other suitable materials, or combinations thereof. It should be noted that the normal direction of the first substrate 110 can be parallel to the direction Z.

[0046] The electronic component EC can be any suitable component, and the electronic component EC can be transferred through a transfer process. In some embodiments, the electronic component EC can be a light-emitting component for performing a screen display, or the electronic component EC can be a component for performing sensing (such as light sensing or other suitable sensing) or for assisting sensing. For example, the electronic component EC can be a diode (such as a light-emitting diode or a photodiode), but is not limited thereto. In an embodiment where the electronic component EC is a light-emitting component (such as a light-emitting diode) (as Figure 3 shown), the electronic component EC can include an electrode E1, an electrode E2, a first semiconductor layer SM1, a second semiconductor layer SM2, and a light-emitting layer AL. The electrode E1 can be electrically connected to the first semiconductor layer SM1 (the electrode E1 can also directly contact the first semiconductor layer SM1), the electrode E2 can be electrically connected to the second semiconductor layer SM2 (the electrode E2 can also directly contact the second semiconductor layer SM2), and the light-emitting layer AL can be disposed between the first semiconductor layer SM1 and the second semiconductor layer SM2. For example, the first semiconductor layer SM1 can be a P-type semiconductor layer, the second semiconductor layer SM2 can be an N-type semiconductor layer, and the light-emitting layer AL can be a multiple quantum well (MQW), but is not limited thereto. In Figure 3 it, the electrode E1 and the electrode E2 can be located on the same side of the electronic component EC (that is, the electrode E1 and the electrode E2 are on the same side with respect to the second semiconductor layer SM2), or the electrode E1 and the electrode E2 can be disposed at suitable positions according to requirements. In Figure 3 it, the second semiconductor layer SM2 is between the first substrate 110 and the electrode E1 (electrode E2). In Figure 3 it, the electronic component EC can be disposed on the first substrate 110 through the first adhesive layer 120, but is not limited thereto.

[0047] Such as Figure 1 and Figure 3As shown, in step ST2 of the manufacturing method MT of the electronic device, a first inspection process DP1 is performed to inspect at least a part of the electronic component EC on the first substrate 110 through the detector DTT1, thereby identifying the first defective electronic component ECd1 and the first normal electronic component ECn1, and correspondingly generating a first inspection result (such as a chart), wherein the first inspection process DP1 can inspect the electronic component EC on the first substrate 110 in any suitable manner. For example, Figure 3 shows two first normal electronic components ECn1 and one first defective electronic component ECd1. In some embodiments, the first inspection process DP1 can be inspected by visual inspection, light irradiation inspection, electrical inspection, and / or other suitable methods, and the detector DTT1 can be correspondingly adjusted according to the inspection method used.

[0048] In visual inspection, the appearance of the electronic component EC can be inspected through a suitable instrument to confirm whether there are any damages, chamfer defects, and / or other defects on the electronic component EC. For example, visual inspection can be performed through an Automated Optical Inspection (AOI) device, but is not limited thereto.

[0049] In light irradiation inspection, energy can be provided by irradiating the electronic component EC with light to detect the light emission effect of the electronic component EC (such as determining whether the emitted light color meets the requirements, determining whether it can emit light, etc.).

[0050] In electrical inspection, an electrical signal can be provided to the electronic component EC through a suitable instrument to perform an electrical test on the electronic component EC, thereby confirming whether the electronic component EC can operate according to the electrical signal. In some embodiments, the electrodes E1 and E2 of the electronic component EC can be directly contacted by a probe to provide an electrical signal to the electronic component EC.

[0051] Please refer to Figure 4 and Figure 5 and simultaneously refer to Figure 1 Figure 4 is a cross-sectional schematic view of the first transfer process of the manufacturing method of the electronic device according to an embodiment of the present invention. Figure 5 is a cross-sectional schematic view of a photomask, a first substrate, an electronic component, and a second substrate of the manufacturing method of the electronic device according to an embodiment of the present invention. As Figure 1 and Figure 4 ​As shown, in step ST3 of the manufacturing method MT of the electronic device, the second substrate 210 is provided, and a plurality of conductive traces 224 and a plurality of connection pads 222 are disposed on the second substrate 210. The second substrate 210 can be rigid or flexible, and the second substrate 210 can correspondingly include suitable materials according to its type. For example, the second substrate 210 can include glass, quartz, ceramics, sapphire, polymers (such as, polyimide, polyethylene terephthalate), other suitable materials, or combinations thereof. It should be noted that the normal direction of the second substrate 210 can be parallel to the direction Z, and the size of the first substrate 110 can be greater than, less than, or equal to the size of the second substrate 210.

[0052] In the present invention, at least one conductive layer and at least one insulating layer can be disposed on the second substrate 210, and the conductive traces 224 and the connection pads 222 can be conductive structures in the conductive layer. Examples of the materials of the conductive layer can include metals, transparent conductive materials (such as indium tin oxide (ITO), indium zinc oxide (IZO), etc.), other suitable conductive materials, or combinations thereof. Examples of the materials of the insulating layer can include silicon oxide (SiO x ), silicon nitride (SiN y ), silicon oxynitride (SiO x N y ), organic insulating materials (such as, photosensitive resins), other suitable insulating materials, or combinations thereof. In Figure 4 , the insulating layer 230 disposed on the second substrate 210 can separate at least a part of the conductive traces 224 and the connection pads 222. In some embodiments, the conductive traces 224 can include data lines and scan lines, where the data lines can be used to transmit data signals related to the display screen, and the scan lines can be used to transmit switching signals for controlling the switching elements. For example, the data lines can extend along (or substantially along) the direction Y and be arranged in the direction X, and the scan lines can extend along (or substantially along) the direction X and be arranged in the direction Y, but not limited thereto.

[0053] As Figure 1 and Figure 4 shown, in step ST4 of the manufacturing method MT of the electronic device, a first transfer process TP1 is performed to selectively transfer the first normal electronic component ECn1 from the first substrate 110 to the second substrate 210, and the first transfer process TP1 does not transfer the first defective electronic component ECd1 from the first substrate 110 to the second substrate 210. In the first transfer process TP1 of the present invention, "selectively transferring the first normal electronic component ECn1 from the first substrate 110 to the second substrate 210" means that only the first normal electronic component ECn1 is transferred and the first defective electronic component ECd1 is not transferred, and all or part of the first normal electronic components ECn1 can be transferred according to requirements.

[0054] As Figure 4 shown, in the first transfer process TP1, a alignment process is first performed to align the first substrate 110 and the second substrate 210 with each other in the Z direction, such that the first normal electronic component ECn1 on the first substrate 110 corresponds to and overlaps the first position P1 of the second substrate 210 in the Z direction, and the first defective electronic component ECd1 on the first substrate 110 corresponds to and overlaps the second position P2 of the second substrate 210 in the Z direction. Thereafter, the first normal electronic component ECn1 is separated from the first substrate 110 by a suitable method to selectively transfer the first normal electronic component ECn1 from the first substrate 110 to the first position P1 of the second substrate 210, and leave the first defective electronic component ECd1 on the first substrate 110 to complete the first transfer process TP1, wherein the first normal electronic component ECn1 is adhered to the second substrate 210 through the second adhesive layer 240 on the second substrate 210, so that the first normal electronic component ECn1 is temporarily fixed on the second substrate 210. In some embodiments (as Figure 4 shown), the number of the first normal electronic components ECn1 transferred through the first transfer process TP1 may be greater than 1 (i.e., in the first transfer process TP1, the number of the first normal electronic components ECn1 separated from the first substrate 110 is greater than 1). For example, the first transfer process TP1 may be a mass transfer process, but is not limited thereto.

[0055] In some embodiments, the first transfer process TP1 is to provide sufficient energy EG to the first adhesive layer 120 between the first normal electronic component ECn1 and the first substrate 110, so as to reduce the adhesion effect of the first adhesive layer 120, and further separate the first normal electronic component ECn1 from the first substrate 110. In Figure 4 it, the portion of the first adhesive layer 120 in contact with the first normal electronic component ECn1 may be the first portion 120a, and the portion of the first adhesive layer 120 in contact with the first defective electronic component ECd1 may be the second portion 120b. The first transfer process TP1 may separate the first normal electronic component ECn1 from the first substrate 110 by providing sufficient energy EG to the first portion 120a of the first adhesive layer 120, and the first transfer process TP1 may not provide sufficient energy EG to the second portion 120b of the first adhesive layer 120, so that the first defective electronic component ECd1 continues to be adhered to the first substrate 110 through the first adhesive layer 120.

[0056] For example, the first transfer process TP1 can be a laser transfer process, such that the step of selectively transferring the first normal electronic component ECn1 can be performed by the laser transfer process, and the laser beam serves as the energy EG for separating the first normal electronic component ECn1. In the laser transfer process, the laser beam can be irradiated onto the desired position in the first substrate 110 (i.e., the position corresponding to the first normal electronic component ECn1) and / or the first part 120a of the first adhesive layer 120 to separate the first normal electronic component ECn1 from the first substrate 110. In the laser transfer process, the laser beam may not be irradiated onto the second part 120b of the first adhesive layer 120 (or, the position in the first substrate 110 corresponding to the first defective electronic component ECd1), so that the first defective electronic component ECd1 remains adhered to the first substrate 110 through the first adhesive layer 120. For example, the laser beam can be irradiated along the direction Z, but is not limited thereto. It should be noted that in the laser transfer process, the laser beam can be irradiated onto the first part 120a of the first adhesive layer 120 to cause sintering of the first part 120a, thereby reducing the adhesion force of the first part 120a of the first adhesive layer 120.

[0057] As Figure 4 shown in Figure 5 FIG. 7, a mask MK can also be provided in the first transfer process TP1 to improve the transfer effect of the first transfer process TP1 (such as, the laser transfer process) and / or to separate the desired electronic component EC from the first substrate 110. The mask MK can be disposed on the first substrate 110 in the direction Z and aligned with the first substrate 110 in the direction Z according to the desired position. Therefore, after the alignment process in the first transfer process TP1, the first substrate 110 is located between the mask MK and the second substrate 210. In Figure 5 FIG. 8, the mask MK can include a light-shielding layer LSL, and the light-shielding layer LSL can define at least one opening OP. The light can be blocked by the light-shielding layer LSL, and the light can pass through the opening OP. The light-shielding layer LSL can include any suitable material. For example, the light-shielding layer LSL can include metal, photoresist, ink, resin, pigment, other suitable materials, or a combination of the above, but is not limited thereto. In Figure 5 FIG. 9, each opening OP of the light-shielding layer LSL can correspond to an electronic component EC in the direction Z, and the light-shielding layer LSL can overlap the gap between two adjacent electronic components EC and the electronic component EC that does not need to be transferred in the direction Z.

[0058] It should be noted that in some embodiments, the light shielding layer LSL and the openings OP in the photomask MK are designed according to the configuration positions of the electronic components EC after being transferred to the second substrate 210. Therefore, the design of the light shielding layer LSL and the openings OP can be independent of the first inspection result of the first inspection process DP1. In other words, the design of the light shielding layer LSL and the openings OP can be independent of the distribution of the first defective electronic component ECd1 and the first normal electronic component ECn1 on the first substrate 110, such that each opening OP may correspond to the first normal electronic component ECn1 or the first defective electronic component ECd1. In some embodiments, the transfer area can be determined first on the second substrate 210, and the light shielding layer LSL and the openings OP of the photomask MK can be designed according to the transfer area of the second substrate 210. The smallest area of the photomask MK that contains all the openings OP can be defined as the preset area (i.e., the preset area of the photomask MK is determined according to the transfer area of the second substrate 210, and all the openings OP are located within the preset area).

[0059] For example, both the first substrate 110 and the second substrate 210 can be rectangular. Therefore, the transfer area on the second substrate 210 is rectangular, such that the preset area of the photomask MK is also rectangular, but this is not limiting. For example (as Figure 6 shown in Figure 7 ), when the second substrate 210 is of a shape different from that of the first substrate 110 or the second substrate 210 is finally to be made into a shape different from that of the first substrate 110 (e.g., the first substrate 110 is rectangular and the second substrate 210 is circular), the preset area DR of the photomask MK will correspond to the transfer area of the second substrate 210 (i.e., the preset area DR corresponds to the circular transfer area).

[0060] In addition, in Figure 6 shown in Figure 7 for the photomask MK and the first substrate 110, some of the electronic components EC will not be within the preset area DR due to the design of the preset area DR of the photomask MK, and the first transfer process TP1 will not transfer the electronic components EC located outside the preset area DR, even if this electronic component EC is normal. Accordingly, in Figure 6 shown in Figure 7 for the embodiment, the first normal electronic component ECn1 is located within the preset area DR of the photomask MK (i.e., the first normal electronic component ECn1 is located within Figure 6 the pre-transfer area PTR of the first substrate 110 of Figure 6outside the pre-transfer region PTR of the first substrate 110. Since the light-shielding layer LSL in the preset region DR has an opening OP, and the light-shielding layer LSL outside the preset region DR does not have an opening OP, when the photomask MK is disposed on the first substrate 110, the first normal electronic component ECn1 will correspond to and overlap the opening OP in the preset region DR of the photomask MK in the direction Z (i.e., the photomask MK has a transmission region located in the preset region DR and corresponding to the first normal electronic component ECn1), while other normal electronic components ECo will correspond to the light-shielding layer LSL outside the preset region DR (i.e., the photomask MK has a non-transmission region located outside the preset region DR and corresponding to other normal electronic components ECo), so that the first transfer process TP1 can transfer the first normal electronic component ECn1 from the first substrate 110 to the second substrate 210 without transferring other normal electronic components ECo from the first substrate 110 to the second substrate 210.

[0061] It should be noted that the size of the photomask MK can be related to the size of the first substrate 110. For example, the size of the photomask MK can be the same as the size of the first substrate 110, but not limited thereto.

[0062] In Figure 5 and Figure 7 in order to improve the transfer effect of the first transfer process TP1 (such as, a laser transfer process) and / or to separate the required electronic component EC from the first substrate 110, the size S2 of the opening OP of the light-shielding layer LSL in the horizontal direction (such as, the direction X / direction Y) can be greater than the size S1 of the electronic component EC in the horizontal direction (such as, the direction X / direction Y). For example, in Figure 5 and Figure 7 in, the ratio of the size S2 of the opening OP of the light-shielding layer LSL in the horizontal direction (such as, the direction X) to the size S1 of the electronic component EC in this horizontal direction (such as, the direction X) can be greater than 1.1, but not limited thereto.

[0063] In the first transfer process TP1 (such as, a laser transfer process), in order to enable the first part 120a of the first adhesive layer 120 to obtain a sufficient amount of energy EG and prevent the second part 120b of the first adhesive layer 120 from obtaining a sufficient amount of energy EG, the energy EG received by the second part 120b of the first adhesive layer 120 can be reduced or the second part 120b of the first adhesive layer 120 can be prevented from receiving energy EG by any suitable means. In some embodiments, the first part 120a of the first adhesive layer 120 can obtain a sufficient amount of energy EG and the second part 120b of the first adhesive layer 120 can be prevented from obtaining a sufficient amount of energy EG by the cooperation of the light-shielding layer LSL and other structures.

[0064] For example, as Figure 8As shown, in one embodiment, the photomask MK may include a light-shielding structure OS. The light-shielding structure OS is disposed within the opening OP of the light-shielding layer LSL, and the width of the light-shielding structure OS is greater than or equal to the width of the opening OP, and corresponds to the first defective electronic component ECd1 and the second portion 120b of the first adhesive layer 120 in the Z direction, so as to reduce the energy EG received by the second portion 120b of the first adhesive layer 120 during the first transfer process TP1 or to prevent the second portion 120b of the first adhesive layer 120 from receiving the energy EG during the first transfer process TP1. Accordingly, the photomask MK of this embodiment has a transmissive region corresponding to the first normal electronic component ECn1 (i.e., the light-shielding layer LSL and the light-shielding structure OS are not disposed in the transmissive region) and a non-transmissive region corresponding to the first defective electronic component ECd1 (i.e., the light-shielding layer LSL and / or the light-shielding structure OS are disposed in the non-transmissive region). In the case where the first transfer process TP1 is a laser transfer process, the laser beam L emitted by the emitter ELD passes through the transmissive region and irradiates the first substrate 110 and the first portion 120a of the first adhesive layer 120 to separate the first normal electronic component ECn1 from the first substrate 110. In the case where the first transfer process TP1 is a laser transfer process, the light-shielding structure OS in the non-transmissive region can reduce or prevent the penetration of the laser beam L, so that the second portion 120b of the first adhesive layer 120 cannot obtain sufficient energy EG, and thus the first defective electronic component ECd1 continues to adhere to the first substrate 110 through the first adhesive layer 120. In addition, the light-shielding structure OS may be an opaque material, such as metal, photoresist, ink, resin, pigment, other suitable materials, or a combination of the above.

[0065] For example, as Figure 9 shown, in another embodiment, the photomask MK may be an electrically controlled photomask including a light-shielding layer LSL. Therefore, the light transmittance of the region of the photomask MK corresponding to each opening OP can be controlled by an electrical signal. In Figure 9In [the context], the photomask MK may include an electro-controlled dielectric layer ML, an electro-controlled electrode E3, and an electro-controlled electrode E4 (the electro-controlled electrode E3 and the electro-controlled electrode E4 may be disposed on the same side or different sides of the electro-controlled dielectric layer ML). Among them, the electro-controlled electrode E3 and the electro-controlled electrode E4 may receive corresponding electrical signals as required to generate corresponding electric fields. The state of the electro-controlled dielectric layer ML can be controlled by the electric fields caused by the electro-controlled electrode E3 and the electro-controlled electrode E4. Therefore, in the first transfer process TP1, the light transmittance of the regions of the photomask MK corresponding to the respective openings OP can be controlled by electrical signals, so that the first part 120a of the first adhesive layer 120 obtains sufficient energy EG and the second part 120b of the first adhesive layer 120 cannot obtain sufficient energy EG. Accordingly, the photomask MK of the present embodiment can be controlled by electrical signals to make the transmission region correspond to the first normal electronic component ECn1, and can be controlled by electrical signals to make the non-transmission region correspond to the first defective electronic component ECd1. In the case where the first transfer process TP1 is a laser transfer process, the laser beam L emitted by the emitter ELD passes through the transmission region and irradiates the first substrate 110 and the first part 120a of the first adhesive layer 120 to separate the first normal electronic component ECn1 from the first substrate 110. In the case where the first transfer process TP1 is a laser transfer process, the non-transmission region of the photomask MK can reduce or avoid the penetration of the laser beam L, so that the second part 120b of the first adhesive layer 120 cannot obtain sufficient energy EG, and further the first defective electronic component ECd1 continues to adhere to the first substrate 110 through the first adhesive layer 120. Additionally, the electro-controlled electrode E3 and the electro-controlled electrode E4 may, for example, include a transparent conductive layer, and the electro-controlled dielectric layer ML may, for example, include liquid crystal molecules, and the liquid crystal molecules can be rotated by the electric fields caused by the electro-controlled electrode E3 and the electro-controlled electrode E4, but this is not limited thereto.

[0066] For example, such as Figure 10As shown, in yet another embodiment, a light-shielding member SUT may be provided outside the photomask MK. The light-shielding member SUT may overlap the first defective electronic component ECd1 and the second portion 120b of the first adhesive layer 120 in the Z direction to reduce the energy EG received by the second portion 120b of the first adhesive layer 120 during the first transfer process TP1 or to prevent the second portion 120b of the first adhesive layer 120 from receiving energy EG during the first transfer process TP1. When the first transfer process TP1 is a laser transfer process, the laser beam L emitted by the emitter ELD passes through the opening OP corresponding to the first normal electronic component ECn1 in the light-shielding layer LSL and irradiates the first substrate 110 and the first portion 120a of the first adhesive layer 120, so as to separate the first normal electronic component ECn1 from the first substrate 110. When the first transfer process TP1 is a laser transfer process, the light-shielding member SUT may reduce or prevent the penetration of the laser beam L, so that the second portion 120b of the first adhesive layer 120 cannot obtain sufficient energy EG, and thus the first defective electronic component ECd1 continues to adhere to the first substrate 110 through the first adhesive layer 120. For example, the photomask MK may be disposed between the light-shielding member SUT and the first substrate 110, but not limited thereto. For example, the light-shielding member SUT may be a shutter, and the shutter may be closed when overlapping the first defective electronic component ECd1 and the second portion 120b of the first adhesive layer 120.

[0067] In the present invention, the arrangement relationship between the photomask MK and the first substrate 110 can be designed according to requirements. In Figure 5 an embodiment, the photomask MK and the first substrate 110 may be two separable structures. The photomask MK may further include a photomask substrate MSB, and the light-shielding layer LSL may be disposed on the photomask substrate MSB. During the first transfer process TP1, the mutually separated photomask MK and the first substrate 110 can be aligned with each other, so that the photomask MK can overlap the first substrate 110 in the Z direction, and the opening OP of the light-shielding layer LSL of the photomask MK corresponds to the electronic component EC in the Z direction. Additionally, in Figure 5 an embodiment, the photomask MK may further include a protruding structure PS. The protruding structure PS is disposed on the photomask substrate MSB. The protruding structure PS is located between the photomask substrate MSB and the first substrate 110 during the first transfer process TP1 to reduce the separation difficulty and movement difficulty between the photomask MK and the first substrate 110, thereby reducing the damage to the photomask MK and the first substrate 110 during the first transfer process TP1. For example, the light-shielding layer LSL may be disposed between the protruding structure PS and the photomask substrate MSB, but not limited thereto.

[0068] In Figures 8 to 10In an embodiment, the photomask MK and the first substrate 110 can be integrated into one structure, where the light-shielding layer LSL of the photomask MK can be formed on the first substrate 110. For example, the first substrate 110 can be located between the light-shielding layer LSL and the electronic component EC, but not limited thereto. Additionally, in Figure 9 , the photomask MK further includes an opposing photomask substrate MOB, such that the electro-control dielectric layer ML is disposed between the opposing photomask substrate MOB and the first substrate 110. With this design, the alignment accuracy between the photomask MK and the first substrate 110 can be improved, and the alignment step between the photomask MK and the first substrate 110 can be omitted.

[0069] Additionally, in the manufacturing method MT of the electronic device, before the laser transfer process as the first transfer process TP1, the laser beam L can be selectively tested to perform appropriate correction on the laser transfer process, thereby improving the yield of the manufacturing method MT of the electronic device. Please refer to Figure 11 , Figure 11 is a cross-sectional schematic diagram of the laser beam test in the manufacturing method of the electronic device according to some embodiments of the present invention, where these tests are used to improve the effect of the sintering action of the laser beam L on the adhesive layer (e.g., the first adhesive layer 120). It should be noted that the sintering energy required for the sintering action is the product of the energy density of the laser beam L (the unit of energy density is joule per square centimeter (J / cm 2 )) and the irradiation time of the laser beam L (the unit of irradiation time is nanosecond (ns)). Therefore, when the required sintering energy is the same, the energy density of the laser beam L is inversely proportional to the irradiation time.

[0070] For example, Figure 11 in the first test TT1 of the laser beam L as shown, a receiver RLD for receiving the laser beam L and a test substrate TSB can be provided, where the structure of the test substrate TSB can be the same as or similar to the structure of the first substrate 110, a test adhesive layer TAF is disposed on the test substrate TSB and is the same as or similar to the first adhesive layer 120, and the photomask MK and the test substrate TSB are located between the emitter ELD and the receiver RLD. The laser beam L emitted by the emitter ELD can sequentially pass through the photomask MK, the test substrate TSB, and the test adhesive layer TAF, and finally enter the receiver RLD, and the receiver RLD is used to sense the energy density of the received laser beam L. Therefore, the sensing result of the receiver RLD can be used as a basis for adjusting the energy density and / or irradiation time of the laser beam L to improve the effect of the sintering action, thereby improving the process yield.

[0071] For example, Figure 11In the second test TT2 of the laser beam L, a test substrate TSB can be provided, and a plurality of dummy components DMC are disposed on the test substrate TSB through a test adhesive layer TAF. Then, a preset laser transfer process is performed to transfer the dummy components DMC from the test substrate TSB to a third substrate 310 different from the first substrate 110 and the second substrate 210. In the second test TT2, the desorption rate of the dummy components DMC (i.e., the ratio of the separated number of the dummy components DMC to the total number of the dummy components DMC) can be used as a basis for adjusting the energy density and / or irradiation time of the laser beam L (i.e., the laser transfer process of the first transfer process TP1 can be adjusted according to the results of the preset laser transfer process) to improve the effect of the sintering action and thus improve the process yield. For example, if the desorption rate of the dummy components DMC is greater than 90% or 95%, it can be determined that the laser beam L performs good sintering on the test adhesive layer TAF. In addition, the energy density and / or irradiation time of the laser beam L can be adjusted according to the comparison result between the preset desorption rate and the desorption rate of the dummy components DMC in the second test TT2. For example, when the desorption rate of the dummy components DMC in the second test TT2 is less than the preset desorption rate, the energy density and / or irradiation time of the laser beam L can be increased, but not limited thereto.

[0072] In addition, in Figure 11 the first test TT1 and the second test TT2, the test substrate TSB can also be directly replaced with the first substrate 110 (i.e., Figure 11 the test adhesive layer TAF is directly replaced with the first adhesive layer 120), and the dummy components DMC in the second test TT2 can be disposed in the dummy area of the first substrate 110, where the dummy area can be located, for example, at the periphery of the first substrate 110 to surround the electronic component EC.

[0073] In addition, in the laser transfer process, the laser beam L can separately correspond to one electronic component EC or a plurality of electronic components EC according to its irradiation area. It should be noted that the boundary of the laser beam L should be irradiated on the light shielding layer LSL to prevent the laser beam L from passing through a part of an opening OP and irradiating a part of the first part 120a of the first adhesive layer 120, thereby avoiding causing adverse sintering on the first part 120a of the first adhesive layer 120 and avoiding affecting the yield due to the inability to separate the first normal electronic component ECn1.

[0074] In addition, an optical adjustment element can be selectively disposed on the photomask MK to perform optical path adjustment and modification on the laser beam L. For example, the optical adjustment element can include a lens, so that the optical adjustment element can converge the laser beam L to increase the energy density of the laser beam L, but not limited thereto.

[0075] In addition, in order to improve the effect and yield of the first transfer process TP1, therefore, before the first transfer process TP1, a cleaning process may be selectively performed to clean the first substrate 110. In some embodiments, the cleaning process may include a deionized (DI) water cleaning process, wherein the deionized water cleaning process may clean the first substrate 110 with deionized water to remove foreign matters (such as debris, particles, etc.). For example, the temperature of the deionized water may be greater than or equal to 40°C, so that the deionized water is easy to volatilize without residue, but not limited thereto. In some embodiments, the cleaning process may include a suction cleaning process, wherein the suction cleaning process may suck (such as evacuate) the first substrate 110 to remove foreign matters. For example, the suction cleaning process may be used to clean the space between the electronic components EC, but not limited thereto. In some embodiments, the cleaning process may include a blowing cleaning process, wherein the blowing cleaning process may blow the first substrate 110 to remove foreign matters. For example, the blowing cleaning process may be used to clean the electronic components EC, but not limited thereto.

[0076] Please refer to Figure 12 , Figure 12 FIG. is a top view schematic diagram of the alignment structure used in the first transfer process in the manufacturing method of the electronic device according to an embodiment of the present invention. As Figure 12 shown, during the alignment process of the first transfer process TP1, the first substrate 110 and the second substrate 210 can be aligned with each other through the first alignment structure 112 on the first substrate 110 and the second alignment structure 212 on the second substrate 210, so that the electronic component EC can be disposed at the correct position on the second substrate 210.

[0077] In some embodiments (such as Figure 12 shown), different types of electronic components EC can be transferred onto the second substrate 210. Therefore, the first substrate 110 provided with the electronic component EC (such as a blue light-emitting element), the first substrate 110' provided with the electronic component EC' (such as a red light-emitting element), and the first substrate 110" provided with the electronic component EC" (such as a green light-emitting element) can be provided, and the first substrates 110, 110', 110" respectively have the first alignment structures 112, 112', 112". In the present invention, the sizes of the electronic components EC, EC', EC" can be designed to be the same or different according to requirements, and the pitch D between the electronic components EC on the first substrate 110, the pitch D' between the electronic components EC' on the first substrate 110', and the pitch D" between the electronic components EC" on the first substrate 110" can be designed to be the same or different according to requirements. For example, in Figure 12In the embodiment, the sizes of the electronic components EC, EC', EC" may be the same as each other, and the spacing D between the electronic components EC on the first substrate 110, the spacing D' between the electronic components EC' on the first substrate 110', and the spacing D" between the electronic components EC" on the first substrate 110" may be the same as each other.

[0078] In some embodiments (such as Figure 12 As shown in the figure, the second substrate 210 may have three second alignment structures 212, 212', 212" located at different positions. During the alignment process, the first alignment structure 112 of the first substrate 110 may be aligned with the second alignment structure 212, the first alignment structure 112' of the first substrate 110' may be aligned with the second alignment structure 212', and the first alignment structure 112" of the first substrate 110" may be aligned with the second alignment structure 212", so that the electronic components EC, EC', EC" may be set at different positions, wherein the positional relationship between the three second alignment structures 212, 212', 212" of the second substrate 210 is related to the spacing between the positions where the electronic components EC, EC', EC" are predetermined to be set on the second substrate 210. For example, the distance between two adjacent second alignment structures 212, 212' may be the spacing between the position where the electronic component EC is predetermined to be set on the second substrate 210 and the position where the electronic component EC' is predetermined to be set, but is not limited thereto.

[0079] In some embodiments (not shown), during the alignment process, the first alignment structures 112, 112', and 112" of the first substrate 110 can be aligned with the second alignment structure 212. Thereafter, the first substrate 110' can be moved in one direction by a first distance, and the first substrate 110" can also be moved in this direction by a second distance. The first distance can be the distance between the position where the electronic component EC is predetermined to be set on the second substrate 210 and the position where the electronic component EC' is predetermined to be set, and the second distance can be the distance between the position where the electronic component EC is predetermined to be set on the second substrate 210 and the position where the electronic component EC is predetermined to be set, but is not limited to this.

[0080] In some embodiments, the first transfer process TP1 may perform multiple transfer processes from one first substrate 110 to the second substrate 210. For example, the second substrate 210 may have multiple second alignment structures 212 related to the first substrate 110, and the first substrate 110 may perform an alignment process on the second substrate 210 according to one of the second alignment structures 212 during the first transfer process, and the first substrate 110 may perform an alignment process on the second substrate 210 according to another of the second alignment structures 212 during the second transfer process, so as to transfer the electronic components EC to different positions of the second substrate 210. In this case, the size of the first substrate 110 may be smaller than the size of the second substrate 210, but is not limited thereto.

[0081] In addition, the electronic components related to sensing can be transferred onto the second substrate 210. Therefore, a substrate provided with the electronic components related to sensing can be provided, and the substrate can be aligned with the second alignment structure 212 on the second substrate 210 through the alignment structure on the substrate. The configuration of the electronic components related to sensing on the second substrate 210 can be designed according to requirements. For example, the electronic components for sensing light can have a larger size and be arranged at a larger pitch, and the electronic components for sensing fingerprints can have a smaller size and be arranged in multiple groups (i.e., multiple electronic components are arranged in a group, and multiple groups can be arranged at an appropriate pitch), but it is not limited thereto.

[0082] Please refer to Figure 13 , Figure 13 FIG. is a cross-sectional schematic diagram of the result of the first transfer process and the configuration of the first repair process of the manufacturing method of the electronic device according to an embodiment of the present invention. As Figure 13 shown, after the first transfer process TP1 is completed, the first normal electronic component ECn1 is disposed at the first position P1 on the second substrate 210, and no electronic component EC is disposed at the second position P2 on the second substrate 210 (the first defective electronic component ECd1 is not transferred, resulting in no electronic component EC at the second position P2). For example, in Figure 13 the second substrate 210 shown, the first transfer process TP1 transfers the first normal electronic component ECn1 onto the second substrate 210 through nine transfer processes, and each transfer process is performed with a 3x3 matrix transfer unit TU1. Therefore, if these nine transfer processes are performed in Figure 13 from left to right and then from top to bottom in sequence, the first, fifth, sixth, eighth, and ninth transfer processes all have the situation of not transferring the first defective electronic component ECd1, but it is not limited thereto.

[0083] As Figure 1 and Figure 13 shown, in step ST5 of the manufacturing method MT of the electronic device, a first abnormality analysis is performed to confirm whether a first abnormal event occurs, and the first abnormality analysis can analyze the first inspection result of the first inspection process DP1. For example, the first abnormal event can be that the number of the second positions P2 on the second substrate 210 is greater than a preset value, and / or the first abnormal event can be that the second positions P2 on the second substrate 210 are adjacent. When the first abnormality analysis determines that it is abnormal and a first abnormal event occurs, a first repair process (i.e., step ST6) will be performed; when the first abnormality analysis determines that it is normal and no first abnormal event occurs, the first repair process will be skipped.

[0084] As Figure 1 and Figure 13As shown, in step ST6 of the manufacturing method MT of the electronic device, a first repair process is performed. According to the first anomaly analysis and the first inspection result of the first inspection process DP1, the second normal electronic component ECn2 is transferred from the repair substrate RSB to the second position P2 of the second substrate 210. It should be noted that the repair substrate RSB can be the first substrate 110, so that the second normal electronic component ECn2 can be the normal electronic component EC that has not been transferred on the first substrate 110 (for example, other normal electronic components ECo outside the preset area DR), or the repair substrate RSB can be another substrate different from the first substrate 110, so that the second normal electronic component ECn2 can be the normal electronic component EC on another substrate different from the first substrate 110.

[0085] In the present invention, the first repair process may include a second transfer process. In the second transfer process, first, an alignment process is performed to align and overlap the second normal electronic component ECn2 with the second position P2 of the second substrate 210 in the Z direction. Then, the second normal electronic component ECn2 is transferred from the repair substrate RSB to the second position P2 of the second substrate 210 in a suitable manner to complete the second transfer process, where the second normal electronic component ECn2 is adhered to the second substrate 210 through the second adhesive layer 240 on the second substrate 210. It should be noted that since the first normal electronic component ECn1 has been provided on the second substrate 210, the distance between the repair substrate RSB and the second substrate 210 in the Z direction in the second transfer process will be greater than the distance between the first substrate 110 and the second substrate 210 in the Z direction in the first transfer process TP1. For example, the distance between the repair substrate RSB and the second substrate 210 in the Z direction in the second transfer process can be greater than twice the height of the electronic component EC, but this is not limiting.

[0086] In some embodiments, the second transfer process may be similar to the first transfer process TP1. Therefore, the second transfer process can be another laser transfer process, so that the step of transferring the second normal electronic component ECn2 is performed through another laser transfer process, where at least one second normal electronic component ECn2 can be transferred in one transfer process of the laser transfer process, but this is not limiting. For example, in Figure 13 the second transfer process, each transfer process is performed with a transfer unit TU2 in a 3x3 matrix. And according to the first anomaly analysis and the first inspection result of the first inspection process DP1, the transfer process of the second transfer process can be appropriately designed to reduce the number of transfer processes. For example, in Figure 13The second transfer process transfers the second normal electronic component ECn2 onto the second substrate 210 through two transfer processes, and the position corresponding to the transfer unit TU2 of the second transfer process can be different from the position corresponding to the transfer unit TU1 of the first transfer process TP1.

[0087] In some embodiments, the second transfer process can be a stamp transfer process, such that the step of transferring the second normal electronic component ECn2 is carried out through the stamp transfer process. In one transfer process of the stamp transfer process, one second normal electronic component ECn2 can be transferred, but not limited thereto. In some embodiments, the repair substrate RSB can have a protrusion, and the second normal electronic component ECn2 is disposed on the protrusion, such that the second normal electronic component ECn2 is closer to the second substrate 210 in the second transfer process, thereby improving the yield. It should be noted that the second position P2 of the second substrate 210 can be adjacent to two first normal electronic components ECn1 in a horizontal direction (i.e., the second position P2 is located between these two first normal electronic components ECn1 in this horizontal direction), and the distance between these two first normal electronic components ECn1 in this horizontal direction should be greater than the size of the protrusion in this horizontal direction.

[0088] Please refer to Figure 14 and Figure 15 and simultaneously refer to Figure 1 Figure 14 FIG. is a cross-sectional view of the second inspection process and the second repair process of the manufacturing method of an electronic device according to an embodiment of the present invention. Figure 15 is Figure 14 a top view of the second inspection process and the second repair process of the manufacturing method of the electronic device according to the embodiment shown, wherein Figure 14 the cross-sectional structure shown corresponds to Figure 15 the section line AA' of Figure 1 Figure 14 and Figure 15 shown, in step ST7 of the manufacturing method MT of the electronic device, the second inspection process DP2 is carried out to inspect the second substrate 210 and the electronic components EC located on the second substrate 210 (i.e., the first normal electronic component ECn1 transferred through the first transfer process TP1 and the second normal electronic component ECn2 transferred through the second transfer process), thereby confirming the transfer results of the first transfer process TP1 and the second transfer process, and correspondingly generating a second inspection result (such as a chart). In some embodiments, the second inspection process DP2 can be inspected by appearance inspection, light irradiation inspection, and / or other suitable methods, and the detector DTT2 can be correspondingly adjusted according to the inspection method used.

[0089] ​​In some embodiments, the second inspection process DP2 can be used to confirm whether there are empty positions PE on the second substrate 210 where no electronic components EC are disposed, and identify the empty positions PE, where the empty positions PE can be generated for one or more reasons. For example, the empty position PE can be the second position P2 where the first repair process is not performed, but is not limited thereto. For example, the first normal electronic component ECn1 and / or the second normal electronic component ECn2 are separated from the second substrate 210 for some reasons (such as the reason of not being firmly adhered) after being transferred onto the second substrate 210, and then the first normal electronic component ECn1 and / or the second normal electronic component ECn2 separated from the second substrate 210 are removed subsequently, thereby generating the empty position PE, but is not limited thereto.

[0090] In some embodiments, the second inspection process DP2 can be used to confirm whether the electronic components EC on the second substrate 210 (i.e., the first normal electronic component ECn1 transferred through the first transfer process TP1 and the second normal electronic component ECn2 transferred through the second transfer process) are placed within the correct positions, and identify the electronic components EC not placed in the correct positions and call them the second defective electronic components ECd2. For example, the second defective electronic component ECd2 has an offset (or deflection) in the horizontal direction and / or a skew in the direction Z with respect to its correct position, but is not limited thereto. It should be noted that the position on the second substrate 210 corresponding to the second defective electronic component ECd2 can be called the defective position PD. In addition, similar to the first inspection process DP1, the second inspection process DP2 can also check whether the electronic components EC on the second substrate 210 are damaged, and identify the damaged electronic components EC and call them the second defective electronic components ECd2.

[0091] For example, Figure 15 The second inspection process DP2 of Figure 15 shows two second defective electronic components ECd2 (two defective positions PD) and two empty positions PE, such that the corresponding Figure 14 section line AA’ of

[0092] As Figure 1 , Figure 14 and Figure 15As shown, in step ST8 of the manufacturing method MT of the electronic device, a second abnormality analysis is performed to confirm whether a second abnormal event occurs, where the second abnormality analysis can analyze the second inspection result of the second inspection process DP2. For example, the second abnormal event may be that the total number of empty positions PE and second defective electronic components ECd2 on the second substrate 210 is greater than a preset value (e.g., the ratio of the total number of empty positions PE and second defective electronic components ECd2 to the preset design number of electronic components EC of the electronic device is greater than 1 / 100000), and / or the second abnormal event may be that the empty positions PE on the second substrate 210 are adjacent, the second defective electronic components ECd2 are adjacent, or the empty positions PE and the second defective electronic components ECd2 are adjacent. When the second abnormality analysis determines that it is abnormal and a second abnormal event occurs, a second repair process (i.e., step ST9) will be performed; when the second abnormality analysis determines that it is normal and no second abnormal event occurs, the second repair process will be skipped.

[0093] As Figure 1 , Figure 14 and Figure 15 shown, in step ST9 of the manufacturing method MT of the electronic device, a second repair process is performed. According to the second abnormality analysis and the second inspection result of the second inspection process DP2, the empty positions PE and the second defective electronic components ECd2 on the second substrate 210 are repaired to reduce the number of empty positions PE and the second defective electronic components ECd2.

[0094] As Figure 14 and Figure 15 shown, the second repair process may include a removal process RMP for removing the second defective electronic components ECd2. For example, in Figure 14 , the second defective electronic components ECd2 can be removed from the second substrate 210 by a suction member AC (or an adhesive member), but this is not limited thereto. Since the second defective electronic components ECd2 are removed by the removal process RMP, the defective positions PD corresponding to the second defective electronic components ECd2 in the second substrate 210 become empty.

[0095] As Figure 14 and Figure 15As shown, the second repair process may include a third transfer process TP3 to transfer the third normal electronic component ECn3 from the repair substrate RSB to the empty position PE and / or the empty defective position PD of the second substrate 210. It should be noted that the repair substrate RSB may be the first substrate 110, so that the third normal electronic component ECn3 may be a normal electronic component EC that has not been transferred on the first substrate 110 (for example, other normal electronic components ECo outside the preset area DR), or the repair substrate RSB may be another substrate different from the first substrate 110, so that the third normal electronic component ECn3 may be a normal electronic component EC on another substrate different from the first substrate 110, where the third normal electronic component ECn3 is adhered to the repair substrate RSB through the adhesive layer RA.

[0096] In the third transfer process TP3, a alignment process is first performed to align and overlap the third normal electronic component ECn3 with the empty position PE or the empty defective position PD of the second substrate 210 in the Z direction. Then, the third normal electronic component ECn3 is transferred from the repair substrate RSB to the empty position PE or the empty defective position PD of the second substrate 210 in a suitable manner to complete the third transfer process TP3, where the transferred third normal electronic component ECn3 is adhered to the second substrate 210 through the second adhesive layer 240 on the second substrate 210. It should be noted that since the first normal electronic component ECn1 and the second normal electronic component ECn2 have been provided on the second substrate 210, the distance between the repair substrate RSB and the second substrate 210 in the Z direction in the third transfer process TP3 will be greater than the distance between the first substrate 110 and the second substrate 210 in the Z direction in the first transfer process TP1. For example, the distance between the repair substrate RSB and the second substrate 210 in the Z direction in the third transfer process TP3 may be greater than twice the height of the electronic component EC, but not limited thereto. It should be noted that since the empty position PE may be the second position P2 where the first repair process (second transfer process) has not been performed, part of the empty position PE can also be regarded as the second position P2, so that the third normal electronic component ECn3 can be transferred to the second position P2 and the empty position PE respectively through a single laser transfer process, and the third normal electronic component ECn3 transferred to the second position P2 can be regarded as the aforementioned second normal electronic component ECn2.

[0097] In some embodiments, the third transfer process TP3 may be similar to the second transfer process. Therefore, the third transfer process TP3 may be another laser transfer process or printing transfer process, but not limited thereto. The process and description of the third transfer process TP3 can refer to the second transfer process and will not be repeated here.

[0098] In some embodiments, the manufacturing method MT of the electronic device may omit the first anomaly analysis of step ST5 and the first repair process of step ST6, and through the second repair process, the third normal electronic components ECn3 are respectively transferred to the second position P2, the empty position PE, and the empty defective position PD, and the third normal electronic component ECn3 transferred to the second position P2 can be regarded as the aforementioned second normal electronic component ECn2.

[0099] Please refer to Figure 16 , Figure 16 which is a top view schematic diagram of the second repair process of the manufacturing method of the electronic device according to another embodiment of the present invention. In Figure 16 the second repair process shown in the other embodiment, the second repair process includes a third transfer process TP3 and does not include a removal process. In Figure 16 the second substrate 210 further includes a redundant location PL, and the redundant location PL is adjacent to the position PP (i.e., the aforementioned first position P1 and second position P2) where the electronic component EC is expected to be set. For example (as Figure 16 shown), the electronic device may have a plurality of units PU, and each unit PU includes a position PP (i.e., the aforementioned first position P1, second position P2, empty position PE, or defective position PD) where the electronic component EC is expected to be set and a redundant location PL, but not limited thereto. In the case where the second inspection process DP2 identifies the empty position PE and the second defective electronic component ECd2 located on the defective position PD, the third transfer process TP3 can transfer the third normal electronic component ECn3 to the redundant location PL adjacent to the empty position PE and the redundant location PL adjacent to the defective position PD to achieve the repair effect.

[0100] After the second repair process is completed, it is possible to return to step ST7 and perform the second inspection process DP2 again, and confirm whether a second abnormal event still occurs in the second anomaly analysis of step ST8.

[0101] In the present invention, after the second inspection process DP2 and the second repair process, the setting of the first normal electronic component ECn1, the second normal electronic component ECn2, and the third normal electronic component ECn3 on the second substrate 210 can be referred to Figure 17 .

[0102] In Figure 17 the first normal electronic component ECn1, the second normal electronic component ECn2, and the third normal electronic component ECn3 should be correspondingly connected to the connection pads 222 in the Z direction. For example, in Figure 17Among them, each electronic component EC corresponds to two connection pads 222 (hereinafter, the connection pads 222 corresponding to the same electronic component EC are referred to as a connection pad group 222G), such that the electrode E1 only corresponds to one connection pad 222 in the Z direction, and the electrode E2 only corresponds to the other connection pad 222 in the Z direction. In some embodiments, the size S4 of each connection pad 222 in the horizontal direction (e.g., the X direction) may be greater than or equal to the sizes S3 of the electrodes E1 and E2, so that the distance S5 between two opposite edges of the connection pad group 222G in this horizontal direction is greater than or equal to the size S1 of the electronic component EC in this horizontal direction, in order to improve the bonding yield between the electronic component EC and the connection pads 222 in subsequent processes. Similarly, in a top view, the area surrounded by the edges of the connection pad group 222G may be greater than the area of the electronic component EC in a top view, in order to improve the bonding yield between the electronic component EC and the connection pads 222 in subsequent processes.

[0103] For example, in a top view, two opposite edges of the connection pad group 222G may be located outside the electronic component EC, in order to improve the bonding yield between the electronic component EC and the connection pads 222 in subsequent processes. In Figure 17 Among them, in order to enable two opposite edges of the connection pad group 222G to be located outside the electronic component EC, the sum of the size S1 of the electronic component EC in the horizontal direction (e.g., the X direction), the distance A1 between the electronic component EC and one edge of the connection pad group 222G in this horizontal direction, and the distance A2 between the electronic component EC and the other edge of the connection pad group 222G in this horizontal direction minus the distance S5 between these two opposite edges of the connection pad group 222G in this horizontal direction is greater than or equal to 0 and less than the sum of the distance D1 between the two electrodes E1 and E2 of the electronic component EC in this horizontal direction and the distance D2 between the two connection pads 222 in the connection pad group 222G in this horizontal direction (i.e., 0 ≤ (S1 + A1 + A2 - S5) < (D1 + D2)), but not limited thereto.

[0104] In addition, in order to prevent the electrode E1 or the electrode E2 from getting stuck in the gap between the two connection pads 222 in the connection pad group 222G, the size S3 of the electrode E1 and the electrode E2 in the horizontal direction (e.g., the X direction) is greater than the distance D2 between the two connection pads 222 in the connection pad group 222G, but not limited thereto.

[0105] Such as Figure 1 And Figure 17As shown, in step ST10 of the method MT for manufacturing an electronic device, a bonding process is performed to bond the electronic component EC to the corresponding position of the second substrate 210 (i.e., the first normal electronic component ECn1 is bonded to the first position P1, the second normal electronic component ECn2 is bonded to the second position P2, and the third normal electronic component ECn3 is bonded to the empty position PE or the empty defective position PD). For example, the bonding process can bond the electronic component EC to the corresponding position of the second substrate 210 by heating, pressurizing, irradiating light or any combination thereof. For example, in one example of the bonding process, the second substrate 210 can be heated, and the electronic component EC and the second substrate 210 can be heat-pressed by an appropriate tool to bond the electronic component EC to the connection pad 222, but the present invention is not limited thereto. For example, the tool for heat-pressing can be a plate-like structure or a stick-like structure, but the present invention is not limited thereto.

[0106] like Figure 1 and Figure 2 As shown, after the bonding process of step ST10, in step ST11 of the method MT for manufacturing the electronic device, a third inspection process is performed to inspect the second substrate 210 and the electronic component EC located on the second substrate 210 through a detector, thereby confirming the bonding result of the bonding process and generating a third inspection result (e.g., a chart) accordingly. In some embodiments, the third inspection process can be inspected by appearance inspection, lighting inspection, electrical inspection and / or other suitable methods, and the detector can be adjusted accordingly according to the inspection method used.

[0107] In some embodiments, the third inspection process can be used to confirm whether there are empty positions on the second substrate 210 where no electronic components EC are set, and identify the empty positions, wherein the empty positions may be generated due to one or more reasons. For example, the empty position may be the second position P2 that has not been subjected to the first repair process and the second repair process, but is not limited thereto. For example, the first normal electronic component ECn1, the second normal electronic component ECn2 and / or the third normal electronic component ECn3 are separated from the second substrate 210 and not bonded due to some reasons (e.g., defects caused by the bonding process), thereby generating empty positions, but is not limited thereto.

[0108] In some embodiments, the third inspection process can be used to confirm whether the electronic components EC on the second substrate 210 are correctly bonded to the connection pads 222, and identify the electronic components EC that are not correctly bonded and call them the third defective electronic components. For example, the bonding of the third defective electronic components to the corresponding connection pads 222 has problems and cannot perform normal electrical operations, but this is not limited thereto. It should be noted that the position on the second substrate 210 corresponding to the third defective electronic component can be called the defective position. In addition, similar to the first inspection process DP1 and the second inspection process DP2, the third inspection process can also check whether the electronic components EC on the second substrate 210 are damaged, and identify the damaged electronic components EC and call them the third defective electronic components.

[0109] As Figure 2 shown, in step ST12 of the manufacturing method MT of the electronic device, a third anomaly analysis is performed to confirm whether a third anomaly occurs, where the third anomaly analysis can analyze the third inspection result of the third inspection process. For example, the third anomaly can be that the total number of empty positions and the third defective electronic components on the second substrate 210 is greater than a preset value (e.g., the ratio of the total number of empty positions and the third defective electronic components to the preset design number of the electronic components EC of the electronic device is greater than 1 / 10000). When the third anomaly analysis determines that it is abnormal and a third anomaly occurs, a third repair process (i.e., step ST13) will be performed; when the third anomaly analysis determines that it is normal and no third anomaly occurs, the third repair process will be skipped.

[0110] As Figure 2 shown, in step ST13 of the manufacturing method MT of the electronic device, a third repair process is performed to repair the empty positions and the third defective electronic components on the second substrate 210 according to the third anomaly analysis and the third inspection result of the third inspection process, so as to reduce the number of empty positions and the third defective electronic components.

[0111] When the third repair process needs to repair the empty positions, step ST13_1 can be performed to bond the fourth normal electronic components to the empty positions. Specifically, the fourth normal electronic components are transferred from the repair substrate to the empty positions on the second substrate 210, and then the fourth normal electronic components are bonded to bond the fourth normal electronic components to the connection pads 222 and fill the empty positions. It should be noted that the repair substrate can be the first substrate 110, so that the fourth normal electronic components can be the normal electronic components EC that have not been transferred on the first substrate 110 (e.g., other normal electronic components ECo outside the preset area DR), or the repair substrate can be another substrate different from the first substrate 110, so that the fourth normal electronic components can be the normal electronic components EC on another substrate different from the first substrate 110.

[0112] In some embodiments, when the third repair process needs to repair the third defective electronic component, step ST13_2 can be performed to perform a removal process to remove the third defective electronic component. Specifically, in the removal process of step ST13_2, the bonding of the third defective electronic component can be released first, and then the third defective electronic component can be removed from the second substrate 210 by a suction member (or an adhesive member), so that the defective position corresponding to the third defective electronic component in the second substrate 210 becomes empty. And step ST13_3 can be selectively performed to bond a fourth normal electronic component at the defective position. Specifically, the fourth normal electronic component is transferred to the empty defective position of the second substrate 210, and then the fourth normal electronic component is bonded to bond the fourth normal electronic component on the connection pad 222.

[0113] In some embodiments, when the third repair process needs to repair the third defective electronic component, step ST13_4 can be performed to perform an insulation process to insulate the third defective electronic component from the second substrate 210 (for example, the third defective electronic component is insulated from the driving element on the second substrate 210). For example, the insulation process can be performed by cutting the conductive trace electrically connected to the third defective electronic component, but not limited thereto. And step ST13_5 can be selectively performed to bond a fourth normal electronic component at the redundant position PL adjacent to the third defective electronic component. Specifically, the fourth normal electronic component is transferred to the redundant position PL of the second substrate 210, and then the fourth normal electronic component is bonded to bond the fourth normal electronic component on the connection pad 222.

[0114] It should be noted that the steps of transferring the fourth normal electronic component in step ST13_1, step ST13_3, and step ST13_5 can be performed by the same transfer process or different transfer processes. It should be noted that since the first normal electronic component ECn1, the second normal electronic component ECn2, and the third normal electronic component ECn3 have been provided on the second substrate 210, therefore, in the transfer processes of step ST13_1, step ST13_3, and step ST13_5, the distance between the two substrates will be greater than the distance between the first substrate 110 and the second substrate 210 in the first transfer process TP1. The transfer processes in step ST13_1, step ST13_3, and step ST13_5 can be similar to the third transfer process TP3. Therefore, these transfer processes can be another laser transfer process or a printing transfer process, but not limited thereto. The processes and descriptions of these transfer processes can refer to the third transfer process TP3 and will not be repeated here.

[0115] After the third repair process is completed, step ST11 can be returned to perform the third inspection process again, and it is confirmed in the third anomaly analysis of step ST12 whether the third anomaly still occurs.

[0116] Please refer to Figure 18 and also refer to Figure 2 , Figure 18 which is a cross-sectional schematic view of the forming process of the filling layer in the manufacturing method of an electronic device according to an embodiment of the present invention. As Figure 2 and Figure 18 shown, in step ST14 of the manufacturing method MT of the electronic device, the forming process of the filling layer 250 is performed to form the filling layer 250 on the second substrate 210 to cover the electronic component EC, thereby protecting the electronic component EC. For example, in Figure 18 , the filling material 252 can be coated on the second substrate 210 through the nozzle NZ to form the filling layer 250, wherein a part of the filling material 252 can be disposed on the electronic component EC (the first normal electronic component ECn1, the second normal electronic component ECn2, the third normal electronic component ECn3 and the fourth normal electronic component), and another part of the filling material 252 can be located between the second substrate 210 and the electronic component EC (the first normal electronic component ECn1, the second normal electronic component ECn2, the third normal electronic component ECn3 and the fourth normal electronic component). In some embodiments, the filling material 252 can be an insulating material, so that the filling layer 250 can be an insulating layer.

[0117] Please refer to Figure 19 and also refer to Figure 2 , Figure 19 which is a cross-sectional schematic view of the fourth inspection process in the manufacturing method of an electronic device according to an embodiment of the present invention. As Figure 2 and Figure 19 shown, after the forming process of the filling layer 250 in step ST14, in step ST15 of the manufacturing method MT of the electronic device, the fourth inspection process DP4 is performed to inspect the condition of the second substrate 210 and the electronic component EC located on the second substrate 210 through the detector DTT4 after the filling layer 250 is formed, and the fourth inspection result (such as a chart) is generated accordingly. In some embodiments, the fourth inspection process DP4 can be performed by appearance inspection, light irradiation inspection, electrical inspection and / or other suitable methods, and the detector DTT4 can be adjusted accordingly according to the inspection method used.

[0118] In some embodiments, the fourth inspection process DP4 can be used to confirm whether the electronic component EC on the second substrate 210 can perform normal electrical operations, and identify the electronic component EC that cannot perform normal electrical operations (such as constant lighting or other abnormal conditions) and call it the fourth defective electronic component ECd4. For example, in Figure 19Among them, the fourth defective electronic component ECd4 on the left is in a constant lighting state, and the fourth defective electronic component ECd4 on the right has an abnormal condition. In addition, similar to the first inspection process DP1, the second inspection process DP2, and the third inspection process, the fourth inspection process DP4 can also inspect whether the electronic components EC on the second substrate 210 are damaged, and identify the damaged electronic components EC and call them the fourth defective electronic components ECd4.

[0119] Please refer to Figures 20 to 22 , and at the same time refer to Figure 2 , Figure 20 FIG. is a cross-sectional schematic view of the fourth repair process of the manufacturing method of an electronic device according to an embodiment of the present invention. Figure 21 FIG. is a cross-sectional schematic view of the fourth repair process of the manufacturing method of an electronic device according to another embodiment of the present invention. Figure 22 FIG. is a cross-sectional schematic view of the fourth repair process of the manufacturing method of an electronic device according to still another embodiment of the present invention. As Figure 2 shown, in step ST16 of the manufacturing method MT of the electronic device, a fourth repair process RP4 is performed, and according to the fourth inspection result of the fourth inspection process DP4, the fourth defective electronic component ECd4 on the second substrate 210 is repaired.

[0120] In some embodiments (as Figure 20 shown), the fourth repair process RP4 can coat the fourth defective electronic component ECd4 with a black material BLS to cover the fourth defective electronic component ECd4. For example, the black material BLS may include metals, photoresists, inks, resins, pigments, other suitable materials, or combinations thereof, but is not limited thereto.

[0121] In some embodiments (as Figure 21 shown), the fourth repair process RP4 can electrically insulate the fourth defective electronic component ECd4 from the second substrate 210 (for example, the fourth defective electronic component ECd4 is insulated from the driving element on the second substrate 210). For example, in Figure 21 , a damaged structure DS1 (such as cutting or blasting) can be created on the conductive trace 224 electrically connected to the fourth defective electronic component ECd4 to achieve the effect of electrical insulation. For example, the conductive trace 224 electrically connected to the fourth defective electronic component ECd4 can be blasted by a laser beam to form a damaged structure DS1, but is not limited thereto.

[0122] In some embodiments (as Figure 22 shown), the fourth repair process RP4 can damage the fourth defective electronic component ECd4. For example, the fourth defective electronic component ECd4 can be blasted by a laser beam to form a damaged structure DS2, but is not limited thereto.

[0123] In summary, in the manufacturing method of the electronic device of the present invention, since the first defective electronic component can be identified through the inspection process and the first defective electronic component is not transferred, the yield of the electronic device can be improved and the difficulty of subsequent repair processes can be reduced. In addition, since there are multiple inspection processes and multiple repair processes in the manufacturing method of the electronic device of the present invention, the influence of process errors between different processes can be reduced, so as to improve the yield of the electronic device and reduce the difficulty of subsequent repair processes.

[0124] Although the embodiments of the present invention and their advantages have been disclosed above, it should be understood that any person of ordinary skill in the art can make changes, substitutions, and modifications without departing from the spirit and scope of the present invention. In addition, the protection scope of the present invention is not limited to the processes, machines, manufactures, compositions of matter, devices, methods, and steps in the specific embodiments described in the specification. Any person of ordinary skill in the art can understand the processes, machines, manufactures, compositions of matter, devices, methods, and steps developed currently or in the future from the disclosure of the present invention. As long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to the present invention. Therefore, the protection scope of the present invention includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods, and steps. In addition, each claim constitutes an individual embodiment, and the protection scope of the present invention also includes the combination of each claim and embodiment. The protection scope of the present invention shall be defined by the appended claims.

[0125] The above are only the embodiments of the present invention and are not intended to limit the present invention. For those of ordinary skill in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A manufacturing method of an electronic device, characterized in that, Including the following steps: Providing a first substrate, on which a plurality of electronic components are disposed; Inspecting at least a part of the plurality of electronic components on the first substrate to identify a first defective electronic component and a first normal electronic component; Selectively transferring the first normal electronic component from the first substrate to a first position on a second substrate; And Transferring a second normal electronic component to a second position on the second substrate, the second position corresponding to the position of the first defective electronic component on the first substrate.

2. The manufacturing method according to claim 1, characterized in that, The step of selectively transferring the first normal electronic component is performed by a laser transfer process.

3. The manufacturing method according to claim 2, characterized in that, The laser transfer process includes: Irradiating a laser beam onto the first substrate to separate the first normal electronic component from the first substrate.

4. The manufacturing method according to claim 2, characterized in that, The laser transfer process includes: Providing a mask having a transmissive area corresponding to the first normal electronic component and a non-transmissive area corresponding to the first defective electronic component; and Passing a laser beam through the transmissive area and irradiating it onto the first substrate to separate the first normal electronic component from the first substrate.

5. The manufacturing method according to claim 4, characterized in that, The number of the first normal electronic components separated from the first substrate is greater than 1.

6. The manufacturing method according to claim 2, characterized in that, Before the step of selectively transferring the first normal electronic component, the manufacturing method includes the following steps: Providing a test substrate, on which a plurality of dummy components are disposed; Transferring the dummy components from the test substrate to a third substrate by a preset laser transfer process; and Adjusting the laser transfer process according to the result of the preset laser transfer process.

7. The manufacturing method according to claim 1, characterized in that, The step of selectively transferring the first normal electronic component includes: Providing a mask; Determining a transfer area on the second substrate; Determining a preset area on the mask according to the transfer area, the mask having a transmissive area located within the preset area and corresponding to the first normal electronic component and a non-transmissive area located outside the preset area and corresponding to a third normal electronic component; Aligning the mask with the first substrate; and Passing a laser beam through the transmissive area and irradiating it onto the first substrate to separate the first normal electronic component from the first substrate.

8. The manufacturing method according to claim 1, characterized in that, The step of transferring the second normal electronic component is performed by another laser transfer process.

9. The manufacturing method according to claim 1, characterized in that, The step of transferring the second normal electronic component is performed by a printing transfer process.

10. The manufacturing method according to claim 1, characterized in that, The manufacturing method further includes the following steps: Inspecting the second substrate to identify an empty position; and Transferring a fourth normal electronic component to the empty position.

11. The manufacturing method according to claim 10, wherein, The step of transferring the second normal electronic component to the second position and the step of transferring the fourth normal electronic component to the empty position are performed by a single laser transfer process.

12. The manufacturing method according to claim 1, characterized in that, The manufacturing method further includes the following steps: Inspecting the second substrate to identify a second defective electronic component; Removing the second defective electronic component; and Transferring a fourth normal electronic component to a defective position corresponding to the second defective electronic component.

13. The manufacturing method according to claim 1, characterized in that, The manufacturing method further includes the following steps: Inspect the second substrate to identify a second defective electronic component; and Transfer a fourth normal electronic component to a redundant position, the redundant position being adjacent to a defective position corresponding to the second defective electronic component.

14. The manufacturing method according to claim 1, characterized in that, The manufacturing method further includes the following steps: Bond the first normal electronic component to the first position of the second substrate and bond the second normal electronic component to the second position of the second substrate.

15. The manufacturing method according to claim 14, characterized in that, After the step of bonding the first normal electronic component and the second normal electronic component, the manufacturing method further includes the following steps: Inspect the second substrate to identify an empty position; and Transfer a fifth normal electronic component to the empty position.

16. The manufacturing method according to claim 14, wherein After the step of bonding the first normal electronic component and the second normal electronic component, the manufacturing method further includes the following steps: Inspect the second substrate to identify a third defective electronic component; Remove the third defective electronic component; and Transfer a fifth normal electronic component to a defective position corresponding to the third defective electronic component.

17. The manufacturing method according to claim 14, characterized in that, The manufacturing method further includes the following steps: Apply a filling material on the second substrate such that the filling material is disposed between the second substrate and the first normal electronic component and between the second substrate and the second normal electronic component.

18. The manufacturing method according to claim 17, characterized in that, After the step of applying the filling material on the second substrate, the manufacturing method further includes the following steps: Inspect the second substrate to identify a fourth defective electronic component; and Apply a black material on the fourth defective electronic component.

19. The manufacturing method according to claim 17, characterized in that, After the step of applying the filling material on the second substrate, the manufacturing method further includes the following steps: Inspect the second substrate to identify a fourth defective electronic component; and Electrically insulate the fourth defective electronic component and the second substrate from each other.

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