Method for manufacturing semiconductor wafer protective film

Abstract

The manufacturing method of the semiconductor wafer protection film comprises the following steps: forming a bottom layer film, wherein the bottom layer film comprises a polyurethane material; forming a middle layer film on the bottom layer film, wherein the middle layer film comprises a polystyrene microbead material; and forming a surface layer film on the middle layer film, wherein the surface layer film comprises a nanometer aluminum oxide material. The method is simple and easy to implement, the protective film can be efficiently prepared, and when the protective film is applied to the semiconductor wafer, shock absorption and collision prevention can be effectively achieved, so that the semiconductor wafer is protected against damage in the machining process or the transportation process, and the machining precision or quality and the performance integrity of the semiconductor wafer are guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of material processing, and in particular to a method for manufacturing a semiconductor wafer protective film. Background Art

[0002] In the manufacturing process of semiconductors such as magnetic heads, batch processing is often carried out in the form of wafers in order to improve efficiency. There are multiple long strips arranged on the wafer, and multiple magnetic head units are arranged on each long strip. After multiple processing and testing steps, the wafer is finally separated into multiple independent magnetic head units.

[0003] During the processing and subsequent transportation of wafers, the wafers are easily scratched, collided, and damaged due to the influence of tools such as fixtures, which affects their processing accuracy and quality, and even their performance.

[0004] Therefore, how to protect semiconductor wafers is a difficult problem in the industry, and it is necessary to provide a method for manufacturing a semiconductor wafer protective film to obtain a protective film to overcome the above defects. Summary of the invention

[0005] The object of the present invention is to provide an improved method for manufacturing a semiconductor wafer protective film. The method is simple and easy, and can efficiently produce a protective film. When applied to a semiconductor wafer, it can effectively reduce shock and prevent collision, thereby protecting the semiconductor wafer from damage during processing or transportation, ensuring its processing accuracy or quality and ensuring its performance integrity.

[0006] To achieve the above object, the method for manufacturing a semiconductor wafer protection film of the present invention comprises the following steps:

[0007] forming a base film, the base film comprising a polyurethane material;

[0008] forming an intermediate layer film on the base film, the intermediate layer film comprising a polystyrene microbead material; and

[0009] A surface film is formed on the intermediate film, wherein the surface film comprises nano-aluminum oxide material.

[0010] Compared with the prior art, in the method of the present invention, a bottom layer film of polyurethane material is first prepared, which has good softness and toughness; then, an intermediate layer film of polystyrene microbead material is formed on the bottom layer film, which has a shock-absorbing effect; then, a surface film of nano-alumina material is formed on the intermediate layer film, which has excellent corrosion resistance and wear resistance. Thus, the prepared protective film can be applied to the processing or transportation process of semiconductor wafers, thereby effectively alleviating the vibration and collision of semiconductor wafers during transportation and processing, reducing the risk of scratches and damage to semiconductor wafers, and improving manufacturing efficiency and quality. Moreover, the manufacturing method is simple, easy to operate, low-cost, and suitable for wide industrial applications.

[0011] As an embodiment, the step of forming the bottom layer film includes: mixing a polyurethane material with a solvent to obtain a bottom layer film solution, and spraying and curing the bottom layer film solution to obtain the bottom layer film. Preferably, the solvent is at least one of toluene, butyl acetate, and methyl ethyl ketone.

[0012] As an embodiment, the step of forming the intermediate layer film includes: mixing a polystyrene microsphere material with a solvent to obtain an intermediate layer film solution, spraying the intermediate layer film solution on the bottom layer film, and drying to obtain the intermediate layer film. Preferably, the solvent is a mixed solvent of toluene and xylene.

[0013] As an embodiment, the step of forming the surface layer film includes: mixing a nano-aluminum oxide material with a solvent to obtain a surface layer film solution, spraying the surface layer film solution on the intermediate layer film, and drying to obtain the surface layer film. Preferably, the solvent is at least one of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate. More preferably, the solvent further includes a dispersant and an anti-settling agent. Detailed implementation manners

[0014] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the detailed implementation manners of the present application in conjunction with some embodiments. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0015] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0016] In the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below", and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0017] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0018] The method for manufacturing a semiconductor wafer protective film of the present invention is further described below in conjunction with an embodiment, but the present invention is not limited thereby. The method of the present invention is intended to provide a method for manufacturing a semiconductor wafer protective film, which is simple and easy to implement, can efficiently produce a protective film, and when applied to a semiconductor wafer, can effectively reduce shock and prevent collision, thereby protecting the semiconductor wafer from damage during processing or transportation, ensuring its processing accuracy or quality, and ensuring its performance integrity.

[0019] In one embodiment of the method for manufacturing a semiconductor wafer protective film of the present invention, the method comprises the following steps:

[0020] forming a base film, the base film comprising a polyurethane material;

[0021] forming an intermediate layer film on the base film, the intermediate layer film comprising a polystyrene microbead material; and

[0022] A surface film is formed on the intermediate film, wherein the surface film comprises nano-aluminum oxide material.

[0023] In the method of the present invention, a bottom layer film of polyurethane material is first prepared, which has good softness and toughness; then, an intermediate layer film of polystyrene microbead material is formed on the bottom layer film, which has a shock-absorbing effect; then, a surface film of nano-alumina material is formed on the intermediate layer film, which has excellent corrosion resistance and wear resistance. Thus, the prepared protective film can be applied to the processing or transportation process of semiconductor wafers, thereby effectively alleviating the vibration and collision of semiconductor wafers during transportation and processing, reducing the risk of scratches and damage to semiconductor wafers, and improving manufacturing efficiency and quality. Moreover, the manufacturing method is simple, easy to operate, low-cost, and suitable for wide industrial applications.

[0024] Specifically, in a particular embodiment, first, a base film is formed. 50% of the polyurethane material is dispersed in a solvent for mixing, and the solvent can be selected from at least one of toluene, butyl acetate and butanone. The base film is formed by spray coating, such as spraying on a carrier or a main film layer, and then cured, such as by using an ultraviolet light device, to obtain the base film. It should be noted that after the base film is formed, the carrier can be removed, and if there is a main film layer, it and the main film layer are used as a constituent layer of the protective film.

[0025] Next, the polystyrene microbead material is dispersed in a solvent, and a commonly used solvent for polystyrene is a mixed solvent of toluene and xylene, for example, mixed in a ratio of 1:1 or 2:1, and then the mixed solvent is sprayed onto the surface of the bottom film, and after drying, an intermediate layer film is formed. Common drying methods may be air drying or oven drying.

[0026] Next, the nano-alumina material is mixed with a solvent to prepare a surface film solution, and the surface film solution is sprayed on the intermediate film, and the surface film is obtained after drying. Specifically, 50-70% of the nano-alumina material (usually with a diameter in the range of 0.5-5.0um) is dispersed in a solvent. Preferably, the solvent is at least one of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate and propylene glycol ethyl ether acetate. More preferably, the solvent also includes a dispersant and an anti-settling agent. The prepared surface film solution is sprayed on the intermediate film, and the surface film is obtained after drying.

[0027] In summary, in the method of the present invention, a bottom layer film of polyurethane material is first prepared, which has good softness and toughness; then, an intermediate layer film of polystyrene microbead material is formed on the bottom layer film, which has a shock-absorbing effect; then, a surface film of nano-alumina material is formed on the intermediate layer film, which has excellent corrosion resistance and wear resistance. Thus, the prepared protective film can be applied to the processing or transportation process of semiconductor wafers, thereby effectively alleviating the vibration and collision of semiconductor wafers during transportation and processing, reducing the risk of scratches and damage to semiconductor wafers, and improving manufacturing efficiency and quality. Moreover, the manufacturing method is simple, easy to operate, low-cost, and suitable for wide industrial applications.

[0028] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A manufacturing method of a semiconductor wafer protective film, characterized in that, Comprising the following steps: Forming a bottom layer film, the bottom layer film comprising a polyurethane material; Forming an intermediate layer film on the bottom layer film, the intermediate layer film comprising polystyrene microsphere material; And Forming a surface layer film on the intermediate layer film, the surface layer film comprising nano-aluminum oxide material.

2. The manufacturing method of the semiconductor wafer protective film according to claim 1, characterized in that, The step of forming the bottom layer film includes: mixing a polyurethane material with a solvent to obtain a bottom layer film solution, and spraying and curing the bottom layer film solution to obtain the bottom layer film.

3. The manufacturing method of the semiconductor wafer protective film according to claim 2, wherein, The solvent is at least one of toluene, butyl acetate, and methyl ethyl ketone.

4. The manufacturing method of the semiconductor wafer protective film according to claim 1, characterized in that, The step of forming the intermediate layer film includes: mixing polystyrene microsphere material with a solvent to obtain an intermediate layer film solution, spraying the intermediate layer film solution on the bottom layer film, and drying to obtain the intermediate layer film.

5. The manufacturing method of the semiconductor wafer protective film according to claim 4, characterized in that, The solvent is a mixed solvent of toluene and xylene.

6. The manufacturing method of the semiconductor wafer protective film according to claim 1, wherein, The step of forming the surface layer film includes: mixing nano-aluminum oxide material with a solvent to obtain a surface layer film solution, spraying the surface layer film solution on the intermediate layer film, and drying to obtain the surface layer film.

7. The manufacturing method of the semiconductor wafer protective film according to claim 6, characterized in that, The solvent is at least one of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate.

8. The manufacturing method of the semiconductor wafer protective film according to claim 7, characterized in that, The solvent further includes a dispersant and an anti-settling agent.