Apparatus and method for vapor deposition of low roughness silicon carbide coatings on semiconductor wafer boats

Abstract

The application discloses a semiconductor crystal boat low-roughness silicon carbide coating gas deposition device and method, and particularly relates to the technical field of material surface plating treatment, and comprises a reaction chamber and a graphite support, a bearing table is internally arranged in the reaction chamber, a plurality of gas inlet pipes which are communicated with the inside of the reaction chamber are fixedly connected to the outside of the reaction chamber, two jet heads which are communicated with the inside of the gas inlet pipe are symmetrically arranged at one end of the gas inlet pipe, a plating assembly is arranged at the outside of one of the jet heads, the plating assembly comprises a guide pipe which is sleeved at the outside of the jet head, and a resisting table is arranged at one end of the guide pipe; the graphite support, the jet head and the plating assembly are arranged, an up-and-down inclined staggered state is kept between the plating assembly and the graphite support, the airflow direction is consistent with the rotating direction of the graphite support, the airflow slightly lags behind the movement direction of the graphite support, the blowing efficiency is enhanced by using the chasing effect, and the deposition plating quality of the material silicon carbide coating is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of material surface plating treatment, in particular to a gas deposition device and method for a low-roughness silicon carbide coating of a semiconductor boat. BACKGROUND

[0002] Silicon carbide has excellent physical and chemical properties, such as high melting point, high hardness, corrosion resistance, oxidation resistance, etc., and thus has broad application prospects in the fields of aerospace, weapon equipment, etc. However, silicon carbide cannot be used as a structural material, so a gas deposition furnace coating method is usually used to take advantage of its wear resistance and ablation resistance. The gas deposition furnace is a core part of some vacuum coating equipment and CVD equipment for processing workpieces. According to the structure of the furnace, the deposition furnace is divided into horizontal deposition furnaces and vertical deposition furnaces. Currently, gas mixing and reaction are mainly carried out in the reaction chamber of the deposition furnace equipment, and the gas is sprayed from different directions in the reaction chamber, and a silicon carbide coated graphite carrier is used as a base to support the semiconductor. At the same time, the graphite carrier needs to be heated and rotated quickly to ensure that the gas can be plated stably on the silicon carbide. Therefore, the graphite carrier needs to be adsorbed and fixed on the rotating shaft of the equipment during the reaction. Currently, the gas is blown from different directions near the graphite carrier in the reaction chamber by the nozzles, so that the gas blown from different directions in the reaction chamber forms a complex flow field near the carrier. Generally speaking, the gas flow in the middle of the carrier is relatively stable and concentrated, and the gas can flow uniformly through the surface of the carrier according to the designed path and speed, providing a stable reaction environment for the silicon carbide of the material surface. Due to the space structure and boundary conditions at the edge of the carrier, the gas flow rate at the edge of the carrier usually changes, and some vortexes or flow rate mutation regions are formed at the edge of the carrier. These regions make the motion trajectory of the reaction particles carried by the gas complex, and some reaction-inadequate particles are more likely to accumulate near the edge, affecting the efficiency and quality of the silicon carbide deposition of the material. SUMMARY

[0003] The purpose of the present application is to provide a gas deposition device and method for a low-roughness silicon carbide coating of a semiconductor boat to solve the above-mentioned deficiencies in the art.

[0004] In order to achieve the above object, the present application provides the following technical scheme: the semiconductor crystal boat low roughness silicon carbide coating vapor deposition device and method, including reaction chamber and graphite support, the inside of the reaction chamber is installed with bearing table, the outside of the reaction chamber is fixedly connected with several gas inlet pipes communicated with its inside, one end of the gas inlet pipe is symmetrically installed with two jet heads communicated with its inside, one of the jet heads is externally installed with plating assembly, the plating assembly includes guide pipe sleeved outside the jet head, one end of the guide pipe is installed with abutment, the outside of the abutment is respectively installed with several drainage pipes and several centering cylinder pipes communicated with the inside of the guide pipe, and the drainage pipes and the centering cylinder pipes are used for accurately blowing the airflow near the top and bottom edges of the rotating graphite support, the bearing table is provided with point-shaped shunt limiting assembly in contact with the graphite support, and the drainage pipes and the centering cylinder pipes are provided with turbulent flow assembly for guiding the airflow flow.

[0005] Preferably, the drainage cavity is formed in the middle of one end of the abutment, a moving convex column for moving the centering cylinder pipe is slidably connected in the inside of the drainage cavity, the centering cylinder pipe is communicated with the inside of the drainage cavity and the guide pipe through the moving convex column, and the side shell communicated with the inside of the drainage cavity is fixedly connected to one end of the abutment close to the drainage pipe, and one end of the side shell is provided as an arc structure.

[0006] Preferably, the inside of the drainage pipe is fixedly connected with a shunt baffle, the shunt baffle is provided as a corrugated structure, the outside of the drainage pipe is provided with a shunt opening communicated with its inside, and the shunt opening and the shunt baffle are used for guiding the airflow in the drainage pipe to the outside of the centering cylinder pipe.

[0007] Preferably, the turbulent flow assembly includes a guide ring frame installed at one end of the abutment, and the guide ring frame is used for guiding the airflow guided out of the shunt opening, a sliding groove is formed in the inside of the drainage cavity, two vertical rods are fixedly connected in the inside of the sliding groove, a vertical block is fixedly connected to the outside of the moving convex column, and the vertical block is located in the inside of the sliding groove and slidably sleeved to the outside of the two vertical rods, an extension rod is fixedly connected to one end of the guide ring frame close to the abutment, and one end of the extension rod penetrates the inside of the sliding groove and is fixedly connected to one side of the vertical block, a return spring is connected between the vertical block and the sliding groove, and the return spring is sleeved to the outside of the extension rod, and the outside of the guide pipe is provided with in-situ assembly for dispersing the airflow generated between the adjacent two jet heads near the centering cylinder pipe.

[0008] Preferably, the in-situ assembly comprises a plurality of distance collars fixedly sleeved outside the guide pipe and a stabilizing arm arranged between adjacent air jets, the stabilizing arm is arranged in an L-shaped structure, one end of the stabilizing arm close to the guide pipe is fixedly connected with a positioning seat, two ends of the positioning seat are respectively hingedly connected with a first arc bracket and a second arc bracket, the first arc bracket and the second arc bracket are embedded outside the adjacent two distance collars, a pulling groove is formed in the outside of the first arc bracket, a threaded hole is formed in the inside of the pulling groove and the top of the second arc bracket, and an adjusting bolt is screwed in the threaded hole.

[0009] Preferably, the point-shaped flow limiting assembly comprises a limiting plate fixedly connected in the bearing table and a centering clamp inserted outside the graphite bearing table, the centering clamp is staggered to slide along one side of the stabilizing arm, the limiting plate is slidingly connected with a sliding block, the sliding block and the centering clamp are jointly connected with a stand column, and the centering clamp and the stand column are in contact with the outer part of the graphite bearing table.

[0010] Preferably, the bottom of the sliding block is fixedly connected with a centering shaft column, the inside of the bearing table is fixedly connected with a servo motor, the output end of the servo motor is fixedly connected with a curved table, the curved table is arranged in a triangular structure, one side of the limiting plate is fixedly connected with a connecting shaft column, and the connecting shaft column and the centering shaft column are jointly sleeved with a curved arm.

[0011] In the above technical solution, the present application provides technical effects and advantages:

[0012] 1. By arranging the graphite bearing table, the air jet and the plating assembly, the up-and-down inclined staggered state is maintained between the plating assembly and the graphite bearing table, so that the airflow direction is consistent with the rotation direction of the graphite bearing table, and the airflow slightly lags behind the movement direction of the graphite bearing table, the chase effect is used to enhance the blowing efficiency, and the centrifugal force can effectively reduce the retention of deposits at the outer edge of the graphite bearing table, and the deposition plating quality of the material silicon carbide coating is improved.

[0013] 2. By arranging the centering cylinder, the drainage pipe, the abutment and the graphite bearing table, the lengths of the centering cylinder and the drainage pipe are different from the graphite bearing table, so that after the gas is sprayed from the drainage pipe and the centering cylinder, the speed and pressure will decay with the increase of the distance, the centering cylinder can provide high-energy airflow for removing dense deposits, and the drainage pipe can cover a wider area through low flow rate to avoid excessive impact on the graphite bearing table, thereby realizing layered blowing of different areas outside the graphite bearing table.

[0014] 3、The present application forms the impact of the airflow from the flow guide pipe and the airflow of the centering cylinder in different directions through the setting of the flow guide pipe, the flow distribution port, the flow distribution baffle, the flow guide pipe and the graphite carrier, so that the two airflows will produce turbulence when they meet, the turbulence has irregular flow characteristics, can increase the contact opportunity between the airflow and the sediment, further improve the carrying capacity of the sediment, ensure that the material is fully exposed to the reaction gas, and improve the silicon carbide plating efficiency;

[0015] 4、The present application forms the impact of the airflow from the flow guide pipe and the airflow of the centering cylinder in different directions through the setting of the flow guide pipe, the flow distribution port, the flow distribution baffle, the flow guide pipe and the graphite carrier, so that the two airflows will produce turbulence when they meet, the turbulence has irregular flow characteristics, can increase the contact opportunity between the airflow and the sediment, further improve the carrying capacity of the sediment, ensure that the material is fully exposed to the reaction gas, and improve the silicon carbide plating efficiency;

[0016] 5、The present application forms the impact of the airflow from the flow guide pipe and the airflow of the centering cylinder in different directions through the setting of the flow guide pipe, the flow distribution port, the flow distribution baffle, the flow guide pipe and the graphite carrier, so that the two airflows will produce turbulence when they meet, the turbulence has irregular flow characteristics, can increase the contact opportunity between the airflow and the sediment, further improve the carrying capacity of the sediment, ensure that the material is fully exposed to the reaction gas, and improve the silicon carbide plating efficiency;

[0017] 6、The present application forms the impact of the airflow from the flow guide pipe and the airflow of the centering cylinder in different directions through the setting of the flow guide pipe, the flow distribution port, the flow distribution baffle, the flow guide pipe and the graphite carrier, so that the two airflows will produce turbulence when they meet, the turbulence has irregular flow characteristics, can increase the contact opportunity between the airflow and the sediment, further improve the carrying capacity of the sediment, ensure that the material is fully exposed to the reaction gas, and improve the silicon carbide plating efficiency; BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments or the prior art in the present application, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments described in the present application, and other drawings can also be obtained by those skilled in the art based on these drawings.

[0019] Figure 1 It is a structural schematic view of the reaction chamber of the present application;

[0020] Figure 2 It is a structural schematic view of the jet head of the present application;

[0021] Figure 3 It is a structural schematic view of the centering clamp of the present application;

[0022] Figure 4 Structure diagram of the drainage tube of the present application;

[0023] Figure 5 Structure diagram of the curved arm of the present application;

[0024] Figure 6 Structure diagram of the curved table of the present application;

[0025] Figure 7 Structure diagram of the centering cylinder tube of the present application;

[0026] Figure 8 Structure diagram of the extension rod of the present application Figure 7 Structure diagram of the extension rod of the present application

[0027] Figure 9 Structure diagram of the extension rod of the present application

[0028] Figure 10 Structure diagram of the extension rod of the present application

[0029] Figure 11 Structure diagram of the extension rod of the present application

[0030] Figure 12 Structure diagram of the extension rod of the present application

[0031] Explanation of reference signs:

[0032] 1, reaction chamber; 11, gas inlet pipe; 12, jet head; 13, graphite carrier table; 14, carrier table;

[0033] 2, plating assembly; 21, guide tube; 22, abutment; 23, drainage cavity; 24, drainage tube; 25, moving protrusion; 26, side shell; 27, centering cylinder tube; 28, shunt; 29, shunt baffle;

[0034] 3, point-shaped shunt limiting assembly; 31, stand column; 32, centering clamp; 33, limiting plate; 34, sliding block; 35, curved arm; 36, curved table; 37, servo motor; 38, connection shaft column; 39, centering shaft column;

[0035] 4, turbulent flow assembly; 41, guide ring frame; 42, sliding groove; 43, vertical rod; 44, vertical block; 45, return spring; 46, extension rod;

[0036] 5, in-situ assembly; 51, first arc frame; 52, stabilizing arm; 53, positioning seat; 54, second arc frame; 55, lifting groove; 56, threaded hole; 57, adjusting bolt; 58, distance collar. DETAILED DESCRIPTION

[0037] In order to make the technical personnel in the art better understand the technical solutions of the present application, the present application will be further described in detail below with reference to the drawings.

[0038] The present application provides a semiconductor boat low roughness silicon carbide coating vapor deposition device and method as shown in Figure 2 、 Figure 4 、 Figure 7 and Figure 8 The semiconductor boat low roughness silicon carbide coating vapor deposition device and method, comprising a reaction chamber 1 and a graphite carrier 13, the inside of the reaction chamber 1 is provided with a bearing table 14, and the bearing table 14 is used to drive the graphite carrier 13 to rotate in the reaction chamber 1, the outside of the reaction chamber 1 is fixedly connected with a plurality of gas inlet pipes 11 which are communicated with the inside of the reaction chamber 1, and the plurality of gas inlet pipes 11 are used to perform vapor deposition operation on the graphite carrier 13 from three different directions in the reaction chamber 1, one end of the gas inlet pipe 11 is symmetrically provided with two jet heads 12 which are communicated with the inside of the gas inlet pipe 11, one of the two jet heads 12 is externally provided with a plating assembly 2, the plating assembly 2 comprises a guide pipe 21 which is sleeved outside the jet head 12, one end of the guide pipe 21 is provided with an abutment 22, the outside of the abutment 22 is respectively provided with a plurality of drainage pipes 24 and a plurality of centering cylinder pipes 27 which are communicated with the inside of the guide pipe 21, and the drainage pipes 24 and the centering cylinder pipes 27 are used to accurately blow the airflow near the top and bottom edges of the rotating graphite carrier 13; the specific structure and principle of the reaction chamber 1 and the bearing table 14 are prior art, so they are not described in detail in the present application.

[0039] Referring to Figure 4 、 Figure 5 、 Figure 7 、 Figure 8 and Figure 10 , the drainage cavity 23 is formed in the middle of one end of the abutment 22, the inside of the drainage cavity 23 is slidably connected with a moving convex column 25 which is used to drive the centering cylinder pipe 27 to move, and the centering cylinder pipe 27 is communicated with the inside of the drainage cavity 23 and the guide pipe 21 through the moving convex column 25, one end of the abutment 22 close to the drainage pipe 24 is fixedly connected with a side shell 26 which is communicated with the inside of the drainage cavity 23, and one end of the side shell 26 is provided with an arc structure; the inside of the drainage pipe 24 is fixedly connected with a shunt baffle 29 which is provided with a corrugated structure, the outside of the drainage pipe 24 is provided with a shunt port 28 which is communicated with the inside of the drainage pipe 24, and the shunt port 28 and the shunt baffle 29 are used to guide the airflow in the drainage pipe 24 to the outside of the centering cylinder pipe 27.

[0040] Referring to Figure 1 、 Figure 2 and Figure 7As shown, the number of air inlet pipes 11 is four, and the four air inlet pipes 11 are used to generate airflow in different directions inside the reaction chamber 1, and the outside of each air inlet pipe 11 has two air jets 12, and only the outside of one of the air jets 12 of one of the air inlet pipes 11 is externally mounted with a plating assembly 2, the mounting position of the plating assembly 2 is close to the adjacent two air inlet pipes 11, and the plating assembly 2 is far away from the remaining air inlet pipes 11, at the same time, the plating assembly 2 and the graphite carrier 13 maintain an up-and-down staggered state, so that the airflow direction is consistent with the rotation direction of the graphite carrier 13, and the airflow slightly lags behind the movement direction of the graphite carrier 13, and the chase effect is used to enhance the blowing efficiency, and the centrifugal force can effectively reduce the retention of the external deposits of the graphite carrier 13; the number of the plurality of drainage pipes 24 is six, and the six drainage pipes 24 are arranged in an array at one end of the support 22, and every three drainage pipes 24 form a group, and the three drainage pipes 24 form a triangular structure, the number of the plurality of centering cylinder pipes 27 is four, and the lengths of the centering cylinder pipes 27 and the drainage pipes 24 are different;

[0041] Reference Figure 4 , Figure 7 , Figure 8 and Figure 10As shown, when the graphite carrier 13 rotates inside the reaction chamber 1 and performs vapor deposition on the raw material, the gas inside the four gas inlet pipes 11 is transported to the inside of the plurality of jet heads 12, and the inside of one of the gas inlet pipes 11 is transported with inert gas, and then the gas is transported to the inside of the reaction chamber 1 by the plurality of jet heads 12, at this time, a continuous gas flow is generated near the plurality of jet heads 12, so that the gas flow is sprayed in different directions inside the reaction chamber 1, and the gas flow in different directions interacts near the graphite carrier 13, for vapor deposition on the raw material, and the graphite carrier 13 stays in the reaction chamber 1 for a long time, so that the volatile product generated by the incomplete decomposition of the reaction gas will be retained at the edge of the graphite carrier 13, so that the gas inside one of the jet heads 12 is transported to the inside of the guide pipe 21, and then the gas inside the guide pipe 21 is transported to one end of the abutment 22, and then the gas is compressed in the drainage pipe 24, and the gas inside the guide pipe 21 is quickly sprayed outside the graphite carrier 13, and similarly, the gas inside the guide pipe 21 is transported to the inside of the drainage cavity 23 near the abutment 22, and then the moving convex column 25 and the drainage pipe 24 spray the gas inside the drainage cavity 23 to the outside of the graphite carrier 13, in this process, the arrangement of the drainage pipe 24 and the centering cylinder pipe 27 in an annular array makes the gas flow direction synchronous with the rotation of the graphite carrier 13, which can cover all areas outside the graphite carrier 13, and the "catch-up effect" can enhance the purging efficiency; in addition, the different lengths of the centering cylinder pipe 27 and the drainage pipe 24, after the gas is sprayed from the drainage pipe 24 and the centering cylinder pipe 27, the speed and pressure will decay with the increase of distance, the centering cylinder pipe 27 can provide high-energy gas flow for removing dense deposits, and the drainage pipe 24 can cover a wider area by low flow rate to avoid excessive impact on the graphite carrier 13, thereby achieving layered purging of different areas outside the graphite carrier 13;

[0042] Referring to Figure 7 and Figure 8 As shown, the three drainage pipes 24 form a triangular structure near the graphite carrier 13, and there is a difference in height between the three drainage pipes 24 and the graphite carrier 13, so that the gas flow between the drainage pipe 24 and the centering cylinder pipe 27 forms multiple angles with the graphite carrier 13, and when the drainage pipe 24 and the centering cylinder pipe 27 are used at the same time, the gas flow blown by them can act on the deposits from different heights and directions, increasing the contact area and acting angle of the gas flow and the deposits, which can more comprehensively destroy the adhesion between the deposits and the graphite carrier 13, so that the deposits are more easily removed, and the consistency of the thickness of the material silicon carbide coating is ensured;

[0043] Referring to Figure 7 and Figure 8As shown, the gas flow inside the guide tube 21 is guided by the flow guide pipe 24, and then the gas flow inside the flow guide pipe 24 collides with the flow dividing baffle 29, at this time the collided gas flow is discharged from the inside of the flow guide pipe 24 through the flow dividing port 28, and the gas flow discharged from the flow dividing port 28 moves near the flow guide pipe 24, and the flow dividing port 28 forms different direction impact between the gas flow guided by the flow guide pipe 24 and the gas flow of the centering cylinder tube 27 itself, so that the two gas flows intersect to generate turbulence, the turbulence has irregular flow characteristics, which can increase the contact opportunity between the gas flow and the deposit, further improve the carrying capacity of the deposit, so that the gas flow synergizes, reduces the shielding effect of the graphite carrier 13, ensures that the material is fully exposed to the reaction gas, and improves the silicon carbide plating efficiency.

[0044] Reference Figure 7 , Figure 8 and Figure 9 As shown, the flow guide pipe 24 and the centering cylinder tube 27 are provided with a turbulent flow assembly 4 for guiding the flow of the gas flow; the turbulent flow assembly 4 includes a guide ring frame 41 mounted at one end of the abutment 22, and the guide ring frame 41 is used to guide the gas flow introduced into the flow dividing port 28, the inside of the flow guide cavity 23 is provided with a sliding groove 42, the inside of the sliding groove 42 is fixedly connected with two symmetrical vertical rods 43, the outside of the moving protruding column 25 is fixedly connected with a vertical block 44, and the vertical block 44 is located inside the sliding groove 42 and is slidingly connected to the outside of the two vertical rods 43, the end of the guide ring frame 41 close to the abutment 22 is fixedly connected with an extension rod 46, and one end of the extension rod 46 penetrates the inside of the sliding groove 42 and is fixedly connected to one side of the vertical block 44, the vertical block 44 and the sliding groove 42 are connected with a reset spring 45, and the reset spring 45 is sleeved outside the extension rod 46, and the outside of the guide tube 21 is provided with an in-situ assembly 5 for dispersing the gas flow generated between adjacent two air jet heads 12 near the centering cylinder tube 27;

[0045] In addition, the guide ring frame 41 is provided in an annular corrugated structure, and the number of the sliding groove 42, the vertical rod 43, the vertical block 44, the reset spring 45 and the extension rod 46 is two groups, and they are symmetrically arranged inside the flow guide cavity 23, and at the same time, the guide ring frame 41 is located between the flow guide pipe 24 and the centering cylinder tube 27;

[0046] Reference Figure 7 , Figure 8 and Figure 9As shown, the air flow generated inside the guide tube 21 is guided to the inside of the guide cavity 23 through the guide cavity 23, and then the air flow is in contact with the periphery of one end of the movable convex column 25, which is used to push the movable convex column 25 to move in the stressed direction along the inside of the guide cavity 23. At this time, the outside of the movable convex column 25 is in contact with the protruding part of the inside of the guide cavity 23, so that the movable convex column 25 cannot continue to move in the guide cavity 23. At the same time, the movable convex column 25 moves in the guide cavity 23, which drives the vertical block 44 to move along the inside of the sliding groove 42. Then the vertical rod 43 is used to guide and stabilize the movement of the vertical block 44 in the sliding groove 42. At this time, the vertical block 44 moves to push the extension rod 46 to move synchronously, and the return spring 45 is squeezed between the vertical block 44 and the sliding groove 42. The extension rod 46 moves to push the guide ring frame 41 to move along the outside of the centering cylinder tube 27 and the bottom of the guide tube 24, so that the outside of the guide ring frame 41 is located at the front end of the shunt port 28, which is used to guide the air flow flowing out of the shunt port 28. When the air flow passes through the guide ring frame 41, it will flow along the corrugated shape. The corrugated structure will generate a certain resistance to the air flow, which is used to adjust the speed of the air flow, so that the air flow is more stably conveyed to the vicinity of the centering cylinder tube 27, thereby improving the utilization efficiency of the air flow.

[0047] Referring to Figure 11 and Figure 12 As shown, the in-situ assembly 5 includes a plurality of distance collar rings 58 fixedly sleeved outside the guide tube 21 and a stabilizing arm 52 arranged between adjacent air injection heads 12. The stabilizing arm 52 is arranged in an L-shaped structure. One end of the stabilizing arm 52 close to the guide tube 21 is fixedly connected with a positioning seat 53. The two ends of the positioning seat 53 are respectively hingedly connected with a first arc frame 51 and a second arc frame 54. The first arc frame 51 and the second arc frame 54 are embedded outside the two adjacent distance collar rings 58. The outside of the first arc frame 51 is provided with a lifting slot 55. The inside of the lifting slot 55 and the top of the second arc frame 54 are jointly provided with a threaded hole 56. The inside of the threaded hole 56 is screwed with an adjusting bolt 57.

[0048] Referring to Figure 7 , Figure 11 and Figure 12As shown, the air flow generated by the two air jets 12 at one end of the two adjacent air inlet pipes 11, and the other air jet 12 blows horizontally towards the vicinity of the graphite carrier 13, so that when the blown air flow approaches the vicinity of the plating assembly 2, the mounting position of the stabilizing arm 52 is first kept at a suitable distance from the abutment 22, the graphite carrier 13 and the point-shaped flow limiting assembly 3 according to the needs, by sleeving the first arc-shaped bracket 51 and the second arc-shaped bracket 54 outside the two adjacent distance sleeves 58, and then the first arc-shaped bracket 51 and the second arc-shaped bracket 54 are used to wrap the outside of the two adjacent distance sleeves 58, at this time the adjusting bolt 57 is screwed with the threaded hole 56 opened in the lifting groove 55, and the adjusting bolt 57 penetrates the threaded hole 56 opened in the lifting groove 55, and the bottom end of the adjusting bolt 57 is slowly screwed into the inside of the threaded hole 56 opened outside the second arc-shaped bracket 54, and the adjusting bolt 57 is used to keep the first arc-shaped bracket 51 and the second arc-shaped bracket 54 screwed and fixed, so that the first arc-shaped bracket 51 and the second arc-shaped bracket 54 are selected to be installed outside the two adjacent distance sleeves 58, so that the mounting position of the stabilizing arm 52 is kept at a suitable distance from the abutment 22, the graphite carrier 13 and the point-shaped flow limiting assembly 3, and the stabilizing arm 52 is used to resist the part of the air flow blown horizontally by the other air jet 12, so that the air flow blown by the air jet 12 is blocked by the stabilizing arm 52 when it approaches the centering cylinder tube 27 and the flow guide pipe 24, reducing the air flow impact near the flow guide pipe 24 and the centering cylinder tube 27, and forming a relatively uniform sweeping area on the surface of the graphite carrier 13, further improving the plating efficiency of the material silicon carbide.

[0049] Referring to Figure 2 , Figure 3 , Figure 5 and Figure 6 As shown, the bearing table 14 is provided with a point-shaped flow limiting assembly 3 in three-point contact with the graphite carrier 13, the point-shaped flow limiting assembly 3 includes a limiting plate 33 fixedly connected inside the bearing table 14 and a centering clamp 32 inserted outside the graphite carrier 13, the outside of the centering clamp 32 is staggered through one side of the stabilizing arm 52, the outside of the limiting plate 33 is slidingly connected with a sliding block 34, the sliding block 34 and the centering clamp 32 are jointly connected with a stand column 31, and the centering clamp 32 and the stand column 31 are in contact with the outside of the graphite carrier 13; the bottom of the sliding block 34 is fixedly connected with a centering shaft column 39, the inside of the bearing table 14 is fixedly connected with a servo motor 37, the output end of the servo motor 37 is fixedly connected with a curved table 36, the curved table 36 is triangular in structure, one side of the limiting plate 33 is fixedly connected with a connecting shaft column 38, and the connecting shaft column 38 and the centering shaft column 39 are jointly sleeved with a curved arm 35;

[0050] Referring to Figure 2 , Figure 3 , Figure 5 and Figure 6As shown, when the graphite carrier 13 is placed in the reaction chamber 1 and needs to be kept stable on the top of the carrier 14, the graphite carrier 13 is placed between the three centering clamps 32, and then the servo motor 37 drives the curved table 36 to rotate synchronously, at this time the curved table 36 drives the three connecting shaft columns 38 to move synchronously, and the movement of the three connecting shaft columns 38 pulls the three curved arms 35 to move, and the movement of the three curved arms 35 pulls the three centering shaft columns 39 and drives the three sliders 34 to move along the outside of the three limiting plates 33, so that the three vertical columns 31 drive the three centering clamps 32 to move close to the outside of the graphite carrier 13 under the movement of the three sliders 34, and then the three centering clamps 32 wrap and limit the graphite carrier 13, at the same time, after the three centering clamps 32 wrap the graphite carrier 13, a point structure is realized on the outside of the graphite carrier 13, which is used to expose most of the position of the graphite carrier 13 to the outside, so that three points determine a plane, which can accurately position the position and angle of the graphite carrier 13, increase the contact area of the outside of the graphite carrier 13 with the airflow, and make the airflow evenly cover the surface of the graphite carrier 13 to avoid dead angles.

[0051] Working principle:

[0052] In use;

[0053] Reference Figure 2 、 Figure 3 、 Figure 5 and Figure 6 As shown, when the graphite carrier 13 is placed on the top of the carrier 14, first, the graphite carrier 13 is placed in the inside of the reaction chamber 1 by the mechanical hand, and the graphite carrier 13 is located in the inside of the point-shaped flow limiting assembly 3, then the point-shaped flow limiting assembly 3 is used to limit the graphite carrier 13 on the top of the carrier 14, at this time after the point-shaped flow limiting assembly 3 limits the graphite carrier 13, most of the position of the graphite carrier 13 is exposed to the outside, so that three points determine a plane, which can accurately position the position and angle of the graphite carrier 13, and increase the contact area of the outside of the graphite carrier 13 with the airflow, so that the airflow can evenly cover the surface of the graphite carrier 13.

[0054] refer to Figure 1 and Figure 2 As shown, the point-shaped flow limiting component 3 and the graphite stage 13 are rotated in the reaction chamber 1 by the support platform 14. Then, the four air inlet pipes 11 transport the gas inside to the interior of several jet heads 12. One of the air inlet pipes 11 is for transporting inert gas. The gas is then transported into the interior of the reaction chamber 1 by the several jet heads 12. At this time, a continuous airflow is generated near the several jet heads 12, so that the airflow is ejected in different directions inside the reaction chamber 1. The airflows in different directions interact near the graphite stage 13 for vapor deposition of the raw materials.

[0055] refer to Figure 4 , Figure 7 , Figure 8 , Figure 9 and Figure 10 As shown, when the graphite stage 13 remains in the reaction chamber 1 for an extended period, volatile products generated from the incomplete decomposition of the reaction gas remain at the edge of the graphite stage 13. Gas is generated inside one of the jet nozzles 12 and transported into the guide tube 21. As the gas inside the guide tube 21 is transported to one end of the platform 22, it is compressed inside the drainage tube 24, rapidly propelling the gas inside the guide tube 21 towards the outside of the graphite stage 13. Similarly, the gas inside the guide tube 21 is transported along the vicinity of the platform 22 towards the inside of the drainage cavity 23. Then, the moving protrusion 25 and drainage tube 24 propel the gas inside the drainage cavity 23 towards the outside of the graphite stage 13. During this process, the annular array of the drainage tube 24 and the centering tube 27 synchronizes the airflow direction with the rotation of the graphite stage 13, covering all areas outside the graphite stage 13. The "catching-up effect" enhances the purging efficiency, making it easier to remove deposits and ensuring the consistency of the silicon carbide coating thickness.

[0056] refer to Figure 7 , Figure 8 , Figure 9 and Figure 10 As shown, the internal airflow is diverted outward through the diversion port 28 via the diversion pipe 24, and when the guide pipe 21 transports the internal airflow into the diversion cavity 23, the airflow immediately comes into contact with the outer periphery of one end of the movable protrusion 25, which pushes the movable protrusion 25 to move along the inside of the diversion cavity 23 in the direction of force. At this time, the turbulent flow assembly 4 is located at the front end of the diversion port 28, which guides the airflow flowing out of the diversion port 28. When the airflow passes through the guide ring frame 41, it will flow along the shape of the corrugation. The corrugated structure will generate a certain resistance to the airflow, which is used to adjust the speed of the airflow, so that the airflow is transported more stably to the vicinity of the centering cylinder 27.

[0057] refer to Figure 2 ,Figure 11 and Figure 12 As shown in the figure, the air flow is generated by two air jets 12 at one end of two adjacent air inlet pipes 11, and the other air jet 12 blows horizontally towards the vicinity of the graphite carrier 13, so that the air flow is close to the flow guide pipe 24 and the centering cylinder pipe 27, and the in-situ assembly 5 is used to resist the part of the air flow blown by the other air jet 12 horizontally, so that the air flow blown by the air jet 12 is blocked by the in-situ assembly 5 when it is close to the centering cylinder pipe 27 and the flow guide pipe 24, the air flow impact on the vicinity of the flow guide pipe 24 and the centering cylinder pipe 27 is reduced, a relatively consistent blowing area can be formed on the surface of the graphite carrier 13, and the silicon carbide plating efficiency is further improved.

[0058] The above only describes some exemplary embodiments of the present application by way of illustration, and it is needless to say that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present application, therefore, the above figures and description are illustrative in nature and should not be understood as limiting the scope of the claims of the present application.

Claims

1. A vapor deposition apparatus for low-roughness silicon carbide coatings on semiconductor boats, comprising a reaction chamber and a graphite stage, wherein the stage is installed inside the reaction chamber, and a plurality of air inlet pipes communicating with the interior of the reaction chamber are fixedly connected to the exterior of the reaction chamber, and two jet nozzles communicating with the interior of each air inlet pipe are symmetrically installed at one end of the air inlet pipe, characterized in that: One of the jet heads is equipped with a coating assembly on its exterior. The coating assembly includes a guide tube sleeved around the outside of the jet head. A platform is installed at one end of the guide tube. Several flow-guiding tubes and several centering tubes communicating with the inside of the guide tube are respectively installed on the outside of the platform. The flow-guiding tubes and centering tubes are used to precisely blow the airflow near the top and bottom edges of the rotating graphite stage. A point-shaped flow-limiting assembly that contacts the graphite stage at three points is provided inside the stage. A turbulent flow assembly for guiding the airflow is provided between the flow-guiding tubes and the centering tubes. The drainage cavity is opened in the middle of one end of the platform. The drainage cavity is slidably connected to a movable protrusion for driving the centering tube to move. The centering tube communicates with the inside of the drainage cavity and the guide tube through the movable protrusion. The end of the platform near the drainage tube is fixedly connected to a side shell that communicates with the inside of the drainage cavity. One end of the side shell is set as an arc-shaped structure. The inside of the drainage tube is fixedly connected to a flow divider baffle, which is configured as a corrugated structure. The outside of the drainage tube is provided with a flow divider port that communicates with the inside. The flow divider port and the flow divider baffle are used to guide the airflow in the drainage tube to the outside of the centering tube. The turbulent flow assembly includes a guide ring frame installed at one end of the platform, which guides the airflow drawn from the diversion port. A groove is formed inside the diversion cavity, and two symmetrical uprights are fixedly connected inside the groove. A block is fixedly connected to the outside of the movable protrusion, and the block is located inside the groove and slidably sleeved on the outside of the two uprights. An extension rod is fixedly connected to the end of the guide ring frame near the platform, and one end of the extension rod passes through the inside of the groove and is fixedly connected to one side of the block. A return spring is connected between the block and the groove, and the return spring is sleeved on the outside of the extension rod. An in-situ assembly is provided outside the guide tube to disperse the airflow generated between two adjacent jet heads near the centering tube. The airflow generated inside the guide tube is dispersed through the diversion cavity. The airflow is guided inwards, and then the airflow comes into contact with the outer periphery of one end of the movable protrusion, which pushes the movable protrusion to move in the direction of force along the inside of the drainage cavity. At this time, the outer part of the movable protrusion comes into contact with the protruding part inside the drainage cavity, so that the movable protrusion cannot continue to move in the drainage cavity. At the same time, as the movable protrusion moves in the drainage cavity, it drives the upright block to move along the inside of the slide groove. Then the upright rod is used to guide the upright block to move stably in the slide groove. At this time, the movement of the upright block pushes the extension rod to move synchronously, and the return spring is squeezed between the upright block and the slide groove. The movement of the extension rod pushes the guide ring frame to move along the outside of the centering tube and the bottom of the drainage tube. Thus, the outside of the guide ring frame is located at the front end of the diversion port, which is used to guide the airflow flowing out of the diversion port.

2. The vapor deposition apparatus for low-roughness silicon carbide coating on a semiconductor boat according to claim 1, characterized in that: The in-situ assembly includes several distance collars fixedly sleeved on the outside of the guide tube and a stabilizing arm disposed between adjacent jet heads. The stabilizing arm is configured as an L-shaped structure. A positioning seat is fixedly connected to one end of the stabilizing arm near the guide tube. A first arc frame and a second arc frame are respectively hinged to both ends of the positioning seat. The first arc frame and the second arc frame are embedded in the outside of two adjacent distance collars. A lifting groove is opened on the outside of the first arc frame. A threaded hole is opened in the inside of the lifting groove and the top of the second arc frame. An adjusting bolt is screwed into the inside of the threaded hole.

3. The vapor deposition apparatus for low-roughness silicon carbide coating on a semiconductor boat according to claim 2, characterized in that: The point-shaped flow limiting component includes a limiting plate fixedly connected inside the support platform and a centering clamp inserted outside the graphite stage. The outside of the centering clamp slides alternately along one side of the stabilizing arm. A slider is slidably connected to the outside of the limiting plate. A column is connected between the slider and the centering clamp. The centering clamp and the column are in contact with the outer part of the graphite stage.

4. The vapor deposition apparatus for low-roughness silicon carbide coating on a semiconductor boat according to claim 3, characterized in that: The bottom of the slider is fixedly connected to a centering shaft, the inside of the bearing platform is fixedly connected to a servo motor, and the output end of the servo motor is fixedly connected to a curved platform, which is designed as a triangular structure. One side of the limiting plate is fixedly connected to a connecting shaft, and a curved arm is sleeved together between the connecting shaft and the centering shaft.

Images