Semiconductor centrifugal cleaning apparatus and cleaning process

Abstract

The present application relates to the technical field of semiconductor cleaning, in particular to a kind of semiconductor centrifugal cleaning equipment and cleaning process, wherein cleaning process is mainly as follows: semiconductor device in carrier is sequentially transferred to cleaning cavity with cleaning liquid, first rinsing cavity with rinsing liquid, second rinsing cavity with rinsing liquid and drying cavity;In first rinsing cavity, first rinsing process and second dehydration process are sequentially executed;In second rinsing cavity, second rinsing process and third dehydration process are sequentially executed;Wherein, the rinsing liquid in the first rinsing circulation cavity and the second rinsing circulation cavity flows through the regeneration device and circulates back and forth.This application can improve the cleaning effect of semiconductor device by setting two rinsing processes, while the utilization rate of the whole waste liquid is improved by regeneration between the two rinsing circulation cavities, avoiding the accumulation of impurities in a single rinsing circulation cavity for a long time, which reduces the cleaning efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor cleaning, in particular to a semiconductor centrifugal cleaning device and a cleaning process. BACKGROUND

[0002] In the semiconductor manufacturing process, the surface cleanliness of the product directly affects the device yield and performance, and the cleaning process is a key link. The prior art has the following defects:

[0003] First, ultrasonic waves, jet flow and other methods are used for cleaning;

[0004] Ultrasonic vibration is used to generate cavitation effect to achieve cleaning, but high-frequency vibration can cause micro-damage to the fragile structure on the surface of the semiconductor (such as nanoscale gate oxide layer, thin film circuit), affecting the electrical performance of the device. Although the jet flow can remove particles, but for high-density wiring area or flexible substrate, the high-speed fluid impact force can cause plastic deformation of the wire material or displacement of the solder joints, especially in a multi-layer wiring structure, the interlayer medium layer is easy to crack due to stress concentration; at the same time, for products with high density, small penetration gap and ultra-high cleanliness, the efficiency of the traditional cleaning method is also very low.

[0005] Second, the existing equipment often uses a single cavity to complete the whole process of cleaning, rinsing and drying, and the liquid in each process is mixed through the common pipeline or the residual cavity wall, which can easily cause pollution, seriously affecting the cleaning efficiency and increasing the product failure rate. At the same time, the single cavity frequently discharges and discharges the fluid, and the cleaning cycle of the single batch of products is long, which also has a certain challenge to the cleaning efficiency.

[0006] Third, multiple chambers are used to clean the product in multiple processes (generally including cleaning, rinsing, air cutting, drying, etc.), and each process is independently executed without mutual cooperation. Especially in multiple rinsing processes, a large amount of rinsing liquid is wasted, and the recycling times cannot be fully improved. SUMMARY

[0007] The purpose of the present application is to provide a semiconductor centrifugal cleaning device and a cleaning process to solve the problem of low cleaning efficiency of high-density, small-penetration-gap and ultra-high-cleanliness semiconductor products in the prior art.

[0008] The technical solution of the present application is a semiconductor centrifugal cleaning process, which is as follows:

[0009] The semiconductor devices placed in the carrier are transferred to the cleaning cavity with cleaning liquid, and the semiconductor devices in the carrier have a plurality of horizontally distributed fluid gaps between them; the cleaning cavity sequentially performs a centrifugal cleaning process and a first dehydration process;

[0010] The semiconductor device is transferred along with the carrier into a first rinsing chamber containing rinsing solution, and a first rinsing process and a second dehydration process are performed sequentially. During the second dehydration process, the rinsing solution flows into the first rinsing circulation chamber.

[0011] The semiconductor device is transferred along with the carrier to the second rinsing chamber containing rinsing solution, and the second rinsing process and the third dehydration process are performed in sequence. During the third dehydration process, the rinsing solution flows into the second rinsing circulation chamber.

[0012] The semiconductor devices are transferred along with the carrier into the drying chamber to complete the drying process;

[0013] The rinsing solution has a boiling point lower than that of the impurities removed from the semiconductor device. The rinsing solution in the first rinsing circulation chamber and the second rinsing circulation chamber flows through the regeneration device and circulates repeatedly.

[0014] Preferably, the semiconductor device uses a single actuator to complete the transfer, and has the same residence time in the cleaning chamber, the first rinsing chamber, the second rinsing chamber and the drying chamber, and each chamber has a different process start time.

[0015] Preferably, during the process stages of the first rinsing chamber and the second rinsing chamber, the third dehydration process has an opening time earlier than the second dehydration process, so that the fluid in the second rinsing circulation chamber, the first rinsing circulation chamber and the regeneration device flows sequentially for one regeneration cycle.

[0016] Preferably, the fluid discharged from the first rinsing chamber into the first rinsing circulation chamber has a first impurity concentration, the fluid discharged from the second rinsing chamber into the second rinsing circulation chamber has a second impurity concentration, and the fluid processed by the regeneration device has a third impurity concentration; the first impurity concentration, the second impurity concentration, and the third impurity concentration gradually decrease;

[0017] During one of the regeneration cycles, a fluid with a second impurity concentration flows into the first rinsing circulation chamber, a fluid with a third impurity concentration flows into the second rinsing circulation chamber, and a fluid with at least a first impurity concentration flows into the regeneration device.

[0018] Preferably, during one regeneration cycle, a fluid with a second impurity concentration is mixed with a fluid with a first impurity concentration in the first rinsing circulation chamber and then flows into the regeneration device.

[0019] Preferably, during one regeneration cycle, only the fluid with the first impurity concentration flows directly from the first rinsing chamber into the regeneration device.

[0020] Preferably, the carrier carrying the semiconductor device is in an empty liquid state during the process of transferring to the cleaning chamber, the first rinsing chamber and the second rinsing chamber;

[0021] After the semiconductor device enters the cleaning chamber, the first rinsing chamber, and the second rinsing chamber, each chamber has a liquid injection stage, a washing stage, and a dehydration stage.

[0022] Preferably, during the liquid injection phase, the semiconductor device is in a static state;

[0023] During the washing phase, the semiconductor device undergoes alternating forward and reverse rotation.

[0024] During the dehydration stage, the semiconductor device rotates in one direction.

[0025] This application also discloses a semiconductor centrifugal cleaning apparatus, comprising:

[0026] The washing cylinder, the first rinsing cylinder, the second rinsing cylinder, and the drying cylinder are arranged in sequence. The front end of the washing cylinder is provided with a feeding station, and the rear end of the drying cylinder is provided with a discharging station.

[0027] The cleaning circulation tank facilitates the reciprocating flow of the cleaning solution between itself and the cleaning tank.

[0028] The first rinsing circulation cylinder completes the reciprocating flow of rinsing liquid with the first rinsing cylinder;

[0029] The second rinsing circulation cylinder completes the reciprocating flow of rinsing liquid between itself and the second rinsing cylinder;

[0030] An execution unit is used to perform the station transfer of semiconductor devices;

[0031] The regeneration device is installed between the first rinsing circulation cylinder and the second rinsing circulation cylinder to complete the reciprocating flow of fluid between the first rinsing circulation cylinder, the regeneration device and the second rinsing circulation cylinder.

[0032] Preferably, a three-way valve is provided inside the first rinsing circulation drum and connected to a pipeline for connecting the first rinsing drum, the first rinsing circulation drum and the regeneration device respectively.

[0033] Compared with the prior art, the advantages of the present invention are:

[0034] (1) This application uses centrifugal cleaning to process semiconductor products with high density, small penetration gaps and ultra-high cleanliness. By setting up two rinsing processes, the cleaning effect of semiconductor devices can be improved. At the same time, the utilization rate of the overall waste liquid can be improved by regeneration between the two rinsing circulation chambers, avoiding the reduction of cleaning efficiency due to the accumulation of impurities in a single rinsing circulation chamber due to long-term use. The rinsing liquid has a boiling point lower than that of the impurities removed from the semiconductor devices. By distillation regeneration, when the rinsing liquid is heated to the boiling point, the volatile components preferentially vaporize to form steam, such as low-boiling-point solvents and water, while the non-volatile components remain in the liquid phase, such as high-boiling-point impurities, metal ions, organic matter, etc. The steam is condensed and converted into liquid, that is, a regenerated liquid with high purity is obtained, and the non-volatile impurities remain in the form of residue, thereby achieving separation.

[0035] (2) No other auxiliary storage device is needed during the regeneration process. By taking advantage of the periodic deviation of the fluid residence in different chambers, the regeneration circulation process of the rinsing liquid is started simultaneously when the third dehydration process is started, so that the rinsing liquid with different impurity concentrations can flow in sequence in the second rinsing circulation chamber, the first rinsing circulation chamber and the regeneration device; and based on the setting of the regeneration device, the service life of the rinsing liquid is improved. Attached Figure Description

[0036] The present invention will be further described below with reference to the accompanying drawings and embodiments:

[0037] Figure 1 This is a schematic diagram of a semiconductor centrifugal cleaning process according to the present invention;

[0038] Figure 2 This is a schematic diagram of the structure of the cleaning cylinder, the first rinsing cylinder, the second rinsing cylinder, the drying cylinder, and the execution unit described in this invention;

[0039] Figure 3 This is a schematic diagram of the material transfer cycle described in this invention;

[0040] Figure 4 The first rinsing station and the second rinsing station of the present invention are in Figure 3 The corresponding cyclic principle diagram;

[0041] Figure 5 This is a flow diagram illustrating the regeneration cycle of the rinsing solution as described in Embodiment 1 of the present invention.

[0042] Figure 6 This is a flow diagram illustrating the principle of the rinsing solution during the regeneration cycle as described in Embodiment 2 of the present invention.

[0043] Among them: 1. Cleaning cylinder;

[0044] 10. Cleaning chamber; 11. Cleaning circulation cylinder; 111. Cleaning circulation chamber;

[0045] 2. First rinsing drum;

[0046] 20. First rinsing chamber; 21. First rinsing circulation cylinder; 211. First rinsing circulation chamber;

[0047] 3. Second rinsing drum;

[0048] 30. Second rinsing chamber; 31. Second rinsing circulation cylinder; 311. Second rinsing circulation chamber;

[0049] 4. Drying drum;

[0050] 40. Drying chamber;

[0051] 5. Vehicles;

[0052] 6. Regeneration device;

[0053] 7. Execution unit;

[0054] 71. Three-axis linear motion module; 72. Pick-up mechanism;

[0055] 8. Drive mechanism. Detailed Implementation

[0056] The present invention will be further described in detail below with reference to specific embodiments:

[0057] To facilitate understanding, the application scenario of this application will be explained first. For semiconductor products with high density, very small penetration gaps, and ultra-high cleanliness, traditional cleaning methods such as ultrasonic cleaning and jet cleaning can cause micro-damage to the products and affect device performance. If centrifugal cleaning is used, the entire process of a single chamber will cause cross-contamination. Therefore, this application provides a semiconductor centrifugal cleaning device and cleaning process.

[0058] like Figure 1 , Figure 2 As shown, a semiconductor centrifugal cleaning device is used for cleaning semiconductor products with high density, very small penetration gaps, and ultra-high cleanliness, generally downstream products of semiconductor processes, such as system-in-package (SiP) products and wafer-level package (WLP) products. The main structure of the semiconductor centrifugal cleaning device is as follows, including:

[0059] a. A cleaning cylinder 1, a first rinsing cylinder 2, a second rinsing cylinder 3, and a drying cylinder 4 are arranged sequentially, each containing a cleaning chamber 10, a first rinsing chamber 20, a second rinsing chamber 30, and a drying chamber 40, respectively. Each chamber has a corresponding cleaning station, a first rinsing station, a second rinsing station, and a drying station. A loading station is located at the front end of the cleaning cylinder 1, and a unloading station is located at the rear end of the drying cylinder 4. All adjacent stations are equidistant from each other. Each semiconductor device flows sequentially through each station from the loading station to the unloading station along with the carrier 5, thus completing cleaning, two rinsing cycles, and drying.

[0060] In one embodiment, the lower ends of the washing cylinder 1, the first rinsing cylinder 2, the second rinsing cylinder 3, and the drying cylinder 4 are all equipped with a drive mechanism 8, such as a servo motor, to drive the rotation of each cylinder. In the washing cylinder 1, the first rinsing cylinder 2, and the second rinsing cylinder 3, the drive mechanism 8 is used to realize forward and reverse rotation during the washing / rinsing process, and unidirectional rotation during the dehydration process. The drying cylinder 4 uses internal circulating hot air drying. The rotation of the drying cylinder 4 driven by the drive mechanism 8 can significantly improve the drying efficiency. When the drying cylinder 4 rotates, the carrier 5 rotates synchronously with the cylinder, causing the originally fixed product position to change periodically. For example, semiconductor products will be intermittently exposed to different air directions during rotation, and hot air can contact the product from multiple angles, reducing the "drying blind spots" caused by obstruction.

[0061] In another embodiment, vacuum drying can also be used inside the drying cylinder 4, and the drying cylinder 4 may not be equipped with a drive mechanism 8. Vacuum drying involves reducing the ambient air pressure to below the saturated vapor pressure of water, causing residual moisture on the surface of the semiconductor device to evaporate or sublimate directly from the liquid state, thus avoiding the high-temperature damage associated with traditional heating drying. Furthermore, it offers faster drying efficiency compared to other drying methods.

[0062] b. The cleaning circulation cylinder 11 has a cleaning circulation chamber 111 inside, which is used to complete the reciprocating flow of cleaning liquid between the cleaning cylinder 1 and the cleaning cylinder 1.

[0063] Since the centrifugal cleaning process and the first dehydration process are mainly performed sequentially in the cleaning cylinder 1, the cleaning liquid is mainly in the cleaning cylinder 1 during the centrifugal cleaning process; during the first dehydration process, the cleaning liquid is discharged from the cleaning cylinder 1 to the cleaning circulation cylinder 11; in the next centrifugal cleaning process, the cleaning liquid continues to be discharged from the cleaning circulation cylinder 11 back to the cleaning cylinder 1, and so on.

[0064] c. The first rinsing circulation cylinder 21 has a first rinsing circulation chamber 211 inside, which is used to complete the reciprocating flow of rinsing liquid between the first rinsing cylinder 2;

[0065] Since the first rinsing drum 2 mainly performs the first rinsing process and the second dehydration process in sequence, the rinsing liquid is in the first rinsing drum 2 and the first rinsing circulation drum 21 respectively during the first rinsing process and the second dehydration process.

[0066] d. The second rinsing circulation cylinder 31 has a second rinsing circulation chamber 311 inside, which is used to complete the reciprocating flow of rinsing liquid between the second rinsing cylinder 3;

[0067] Since the second rinsing drum 3 mainly performs the second rinsing process and the third dehydration process in sequence, the rinsing liquid is in the second rinsing drum 3 and the second rinsing circulation drum 31 respectively during the second rinsing process and the third dehydration process.

[0068] e. Execution unit 7, used to perform the station transfer of semiconductor devices;

[0069] The execution unit 7 can be a combination of a three-axis linear motion module 71 and a pickup mechanism 72. The pickup mechanism 72 is installed at the output end of the three-axis linear motion module 71 and is driven to complete the movement in the XYZ three-axis directions. The pickup mechanism 72 picks up the carrier 5 loaded with semiconductor devices to realize the transfer of semiconductor devices between different workstations.

[0070] f. Regeneration device 6 is installed between the first rinsing circulation cylinder 21 and the second rinsing circulation cylinder 31. Fluid pipelines are installed between the first rinsing circulation cylinder 21 and the regeneration device 6, between the regeneration device 6 and the second rinsing circulation cylinder 31, and between the first rinsing circulation cylinder 21 and the second rinsing circulation cylinder 31. When in the open state, the fluid reciprocates between the first rinsing circulation cylinder 21, the regeneration device 6, and the second rinsing circulation cylinder 31.

[0071] Since the rinsing solution has a boiling point lower than that of the impurities removed from the semiconductor device, the distillation regeneration method involves heating the rinsing solution to its boiling point. The volatile components preferentially vaporize to form steam, such as low-boiling-point solvents and water, while the non-volatile components remain in the liquid phase, such as high-boiling-point impurities, metal ions, and organic matter. The steam is then condensed into a liquid, resulting in a highly pure regenerated solution. The non-volatile impurities remain as residue, thus achieving separation.

[0072] Based on the aforementioned semiconductor centrifugal cleaning equipment, the specific cleaning process is as follows:

[0073] S1. Semiconductor devices placed in a carrier are transferred from the loading station to a cleaning chamber containing cleaning fluid. Several horizontally distributed, narrow fluid gaps exist between the semiconductor devices within the carrier. The cleaning chamber sequentially performs a centrifugal cleaning process and a first dehydration process. During the centrifugal cleaning process, centrifugal force forces the cleaning fluid (such as water or solvent) to quickly penetrate into the narrow gaps or micropores, overcoming the problem of surface tension hindering liquid penetration during static immersion. The inertial force generated by rotation causes the cleaning fluid to flow at high speed within the gaps, flushing away adhering contaminants (such as grease and particles) more directly than ultrasonic waves or spraying. In the first dehydration process, centrifugal dehydration quickly removes highly contaminated cleaning fluid from the product surface and narrow gaps, preventing it from mixing into the rinsing tank and extending the service life of the rinsing fluid.

[0074] S2. The semiconductor device is transferred along with the carrier into the first rinsing chamber containing rinsing solution, and the first rinsing process and the second dehydration process are performed in sequence. In the second dehydration process, the rinsing solution flows into the first rinsing circulation chamber. In the first rinsing process, it is mainly used to remove the cleaning solution adhering to the surface of the semiconductor device, as well as some other contaminants that were not removed in the centrifugal cleaning process. It is a coarse rinsing process.

[0075] S3. The semiconductor device is transferred along with the carrier to the second rinsing chamber containing rinsing solution, and the second rinsing process and the third dehydration process are performed in sequence. In the third dehydration process, the rinsing solution flows into the second rinsing circulation chamber. This stage is a fine rinsing process to improve the cleanliness of the semiconductor device surface.

[0076] S4. The semiconductor device is transferred to the drying chamber along with the carrier to complete the drying process; the drying process can be either internal circulation hot air drying or vacuum drying.

[0077] When a semiconductor device enters the cavity along with a carrier, if there is liquid in the cavity, the semiconductor device may break or be damaged due to the impact of the liquid surface when it is placed in. Therefore, in this application, the carrier carrying the semiconductor device is in an empty liquid state during the process of transferring to the cleaning cavity, the first rinsing cavity and the second rinsing cavity. After the semiconductor device enters the cleaning cavity, the first rinsing cavity and the second rinsing cavity, there are liquid injection stage, washing stage and dehydration stage.

[0078] During the liquid injection stage, the semiconductor device is stationary and the drive mechanism is not activated; during the washing stage, the semiconductor device rotates in alternating forward and reverse directions; during the dehydration stage, the semiconductor device rotates in one direction.

[0079] The above steps S1-S4 are the process of the semiconductor device sequentially completing "cleaning", "two rinsing" and "drying". Since the semiconductor device is transferred using a single actuator, the semiconductor device is set to have the same residence time in the cleaning chamber, the first rinsing chamber, the second rinsing chamber and the drying chamber, and thus each chamber has a different process start time.

[0080] For details, please refer to Figure 3 As shown, taking the full state of the cleaning station, first rinsing station, second rinsing station, and drying station as the starting point, at time node I, the actuator transfers the semiconductor devices from the drying station to the unloading station; at time node II, the actuator transfers the semiconductor devices from the second rinsing station to the drying station. The time difference between time node I and time node II is the transfer time. During the transfer time, the actuator needs to retreat (move left) two stations, pick up the semiconductor devices, and then move forward (move right) one station to place the semiconductor devices. This process continues until the semiconductor devices from the loading station are transferred to the cleaning station, at which point one material transfer cycle ends. At this point, the unloading station is full, and the loading station is empty. Therefore, before the start of the next material transfer cycle, the actuator needs to replenish the loading station and clear the unloading station.

[0081] More specifically, such as Figure 4 As shown, taking the first and second rinsing stations as an example, during the execution phase of the first and second rinsing chambers, i.e., within one material transfer cycle, the third dewatering process starts earlier than the second dewatering process. Specifically, the third dewatering process starts at time node A, and the second dewatering process starts at time node B. Before time node A, the second rinsing tank contains rinsing liquid, and the second rinsing circulation tank is empty. After time node A, the rinsing liquid in the second rinsing tank is transferred to the second rinsing circulation tank. Before time node B, the first rinsing tank contains rinsing liquid, and the first rinsing circulation tank is empty. After time node B, the rinsing liquid in the first rinsing tank is transferred to the first rinsing circulation tank. Therefore, between time node A and time node B, the second rinsing circulation tank contains rinsing liquid, while the first circulation tank is empty.

[0082] In this application, the rinsing solution has a boiling point lower than that of the impurities removed from the semiconductor device. The rinsing solution in the first rinsing circulation chamber and the second rinsing circulation chamber flows through the regeneration device and circulates repeatedly. That is, starting from the third dehydration process time point (time point A), the fluids in the second rinsing circulation chamber, the first rinsing circulation chamber, and the regeneration device flow sequentially for one regeneration cycle.

[0083] The following are two examples of rinsing solution flow during the regeneration cycle: Example 1

[0084] The fluid discharged from the first rinsing chamber into the first rinsing circulation chamber has a first impurity concentration ρ1, the fluid discharged from the second rinsing chamber into the second rinsing circulation chamber has a second impurity concentration ρ2, and the fluid processed by the regeneration device has a third impurity concentration ρ3. It should be noted that the rinsing chamber is mainly used to rinse the cleaning fluid adhering to the semiconductor device, as well as some solid impurities or other contaminants that have not been removed in the cleaning chamber. Since the first rinsing chamber processes semiconductor devices from the cleaning chamber, it has a higher impurity concentration than the second rinsing chamber. The regeneration device is designed to obtain a high-purity regeneration fluid, so its impurity concentration is very low. Thus, the first impurity concentration, the second impurity concentration, and the third impurity concentration gradually decrease, i.e., ρ1 > ρ2 > ρ3.

[0085] like Figure 5 As shown, in one regeneration cycle, the fluid (rinsing liquid) with a second impurity concentration ρ2 flows into the first rinsing cycle chamber, the fluid (regeneration liquid) with a third impurity concentration ρ3 flows into the second rinsing cycle chamber, and the fluid (rinsing liquid) with a first impurity concentration ρ1 flows into the regeneration device.

[0086] Specifically, in combination Figure 4 , Figure 5 As shown:

[0087] Step 1. At time point A, the rinsing liquid in the second rinsing chamber begins to flow into the second rinsing circulation chamber. At this time, since the first rinsing circulation chamber is in an empty state, the rinsing liquid with the second impurity concentration flows directly into the first rinsing circulation chamber after reaching the second rinsing circulation chamber.

[0088] Step 2. After the cleaning solution in the second rinsing chamber is discharged, since all the rinsing solution has entered the first rinsing circulation chamber, the second rinsing circulation chamber remains empty. At this time, the regenerated solution that has been processed in the regeneration device is discharged into the second rinsing circulation chamber. This action must be completed before time node B. That is, between time node A and time node B, the rinsing solution with the second impurity concentration needs to be discharged into the first rinsing circulation chamber, and the regenerated solution in the regeneration device needs to be discharged into the second rinsing circulation chamber.

[0089] Step 3. At time point B, the rinsing solution with the first impurity concentration in the first rinsing chamber needs to be discharged. In this embodiment, to avoid mixing of the rinsing solution with the first impurity concentration and the rinsing solution with the second impurity concentration, a three-way valve is installed in the first rinsing circulation cylinder and connected to a pipeline to connect the first rinsing chamber, the first rinsing circulation cylinder, and the regeneration device respectively. By switching the state of the three-way valve, the first rinsing chamber is connected to the first rinsing circulation cylinder, or the first rinsing chamber is connected to the regeneration device. Then, during the regeneration cycle, the three-way valve switches the state to connect the first rinsing chamber to the regeneration device. At time point B, the rinsing solution with the first impurity concentration in the first rinsing cylinder flows directly into the regeneration device to start the regeneration process.

[0090] This completes one regeneration cycle, and the rinsing solutions with the first, second, and third impurity concentrations will not mix.

[0091] It should be clarified that during the regeneration cycle, the three-way valve switching state is used to connect the first rinsing chamber and the regeneration device; during the material transfer cycle, the three-way valve switching state is used to connect the first rinsing chamber and the first rinsing circulation chamber.

[0092] For example, the regeneration process is completed when the regeneration device discharges the liquid. The boiling point of the rinsing liquid is set to about 85°C. During the regeneration process, when the rinsing liquid is heated to the boiling point temperature, the solvent (the main component with a boiling point of 85°C, such as water or organic solvent) vaporizes to form steam, while high-boiling-point impurities (such as metal salts, high molecular weight organic compounds, with boiling points >100°C) remain in the liquid phase. The steam is condensed and reformed into a liquid pure solvent, thus achieving separation from the impurities.

[0093] It should also be noted that this application defines "material transfer cycle" and "regeneration cycle". In actual application scenarios, it is not necessary to execute a regeneration cycle in every material transfer cycle. Generally, a regeneration cycle is started every 3-5 hours.

[0094] Example 2

[0095] like Figure 6 As shown, in one regeneration cycle, a fluid (rinsing liquid) with a second impurity concentration ρ2 flows into the first rinsing cycle chamber, and a fluid (regeneration liquid) with a third impurity concentration ρ3 flows into the second rinsing cycle chamber. The fluid with the second impurity concentration ρ2 mixes with the fluid with the first impurity concentration ρ1 (rinsing liquid of ρ1+ρ2) in the first rinsing cycle chamber and flows into the regeneration device.

[0096] Specifically:

[0097] Step 1. At time point A, the rinsing liquid in the second rinsing chamber begins to flow into the second rinsing circulation chamber. At this time, the first rinsing circulation chamber is empty. Therefore, the rinsing liquid with the second impurity concentration flows directly into the first rinsing circulation chamber after reaching the second rinsing circulation chamber.

[0098] Step 2. After the cleaning fluid in the second rinsing chamber is discharged, the second rinsing circulation chamber is still empty. At this time, the regenerated fluid that has been processed in the regeneration device is discharged into the second rinsing circulation chamber. This action must be completed before time node B. That is, between time node A and time node B, the rinsing fluid with the second impurity concentration needs to be discharged into the first rinsing circulation chamber, and the regenerated fluid in the regeneration device needs to be discharged into the second rinsing circulation chamber.

[0099] Step 3. At time point B, the rinsing solution with the first impurity concentration in the first rinsing chamber needs to be discharged. In this embodiment, the rinsing solution with the first impurity concentration is directly discharged into the first rinsing circulation chamber and mixed with the rinsing solution with the second impurity concentration. This can be understood as the rinsing solution being mixed with the fourth impurity concentration ρ4, where ρ1 > ρ4 > ρ2. Next, a portion of the rinsing solution with the fourth impurity concentration remains in the first rinsing circulation chamber for circulation in the first rinsing process and the second dehydration process, while the remaining portion of the rinsing solution with the fourth impurity concentration flows into the regeneration device to begin regeneration treatment.

[0100] Comparing Example 1 and Example 2, the main difference lies in the impurity concentration in the first rinsing circulation chamber in step 3. In Example 1, the rinsing solution from the second rinsing stage is transferred to the first rinsing stage. Since the impurity concentration in the second rinsing stage is lower than that in the first rinsing stage, a regeneration cycle can be started every 3-5 hours. In Example 2, the mixed rinsing solution from the first and second rinsing stages is transferred to the first rinsing stage. Although the impurity concentration after mixing is lower than that in the first rinsing stage, it is still higher than that in the second rinsing stage. Therefore, compared to Example 1, the regeneration cycle start interval in Example 2 can be shortened, generally set to start every 2-4 hours.

[0101] In summary, by setting up two rinsing processes in this application, not only can the cleaning effect of semiconductor devices be improved, but the overall utilization rate of waste liquid can also be improved through regeneration between the two rinsing circulation chambers. Furthermore, by utilizing the time difference of fluid circulation at each station, non-cross-flow of rinsing liquids with different impurity concentrations can be achieved, making it highly applicable.

[0102] Furthermore, particularly in Example 1, to prevent the mixing of fluids with different impurity concentrations, the conventional method would add an empty auxiliary storage device and use this device to sequentially execute steps 1-3. However, in this application, no other auxiliary storage device is needed during the regeneration process. By taking advantage of the periodic deviation in the residence of the fluid in different chambers, the regeneration and circulation process of the rinsing liquid is started simultaneously when the third dehydration process is started, so that rinsing liquids with different impurity concentrations can flow sequentially in the second rinsing circulation chamber, the first rinsing circulation chamber, and the regeneration device. Based on the setting of the regeneration device, the service life of the rinsing liquid is improved.

[0103] The above embodiments are merely illustrative of the technical concept and features of the present invention, intended to enable those skilled in the art to understand the content of the present invention and implement it accordingly, and should not be construed as limiting the scope of protection of the present invention. It will be apparent to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects. The scope of the present invention is defined by the appended claims rather than the foregoing description, and thus all changes falling within the meaning and scope of the equivalents of the claims are intended to be included within the present invention.

Claims

1. A semiconductor centrifugal cleaning process, characterized in that, The cleaning process is as follows: the semiconductor device is transferred using a single actuator and has the same residence time in the cleaning chamber, the first rinsing chamber, the second rinsing chamber and the drying chamber, and each chamber has a different process start time; Semiconductor devices placed in a carrier are transferred to a cleaning chamber containing cleaning fluid, and there are several horizontally distributed fluid gaps between the semiconductor devices in the carrier; the cleaning chamber sequentially performs a centrifugal cleaning process and a first dehydration process; The semiconductor device is transferred along with the carrier into a first rinsing chamber containing rinsing solution, and a first rinsing process and a second dehydration process are performed sequentially. During the second dehydration process, the rinsing solution flows into the first rinsing circulation chamber. The semiconductor device is transferred along with the carrier to the second rinsing chamber containing rinsing solution, and the second rinsing process and the third dehydration process are performed in sequence. During the third dehydration process, the rinsing solution flows into the second rinsing circulation chamber. The semiconductor devices are transferred along with the carrier into the drying chamber to complete the drying process; The rinsing solution has a boiling point lower than that of the impurities removed from the semiconductor device. The rinsing solution in the first rinsing circulation chamber and the second rinsing circulation chamber flows through the regeneration device and circulates repeatedly. During the process execution phases of the first and second rinsing chambers, the third dehydration process has an opening time earlier than the second dehydration process. Thus, the fluids in the second rinsing circulation chamber, the first rinsing circulation chamber, and the regeneration device flow sequentially for one regeneration cycle. The fluid discharged from the first rinsing chamber into the first rinsing circulation chamber has a first impurity concentration, the fluid discharged from the second rinsing chamber into the second rinsing circulation chamber has a second impurity concentration, and the fluid processed by the regeneration device has a third impurity concentration; the first impurity concentration, the second impurity concentration, and the third impurity concentration gradually decrease; Within one of the regeneration cycles, the third dehydration process starts at time node A, and the second dehydration process starts at time node B. Between time node A and time node B, the rinsing liquid with the second impurity concentration needs to be discharged into the first rinsing circulation chamber, and the regenerated liquid in the regeneration device needs to be discharged into the second rinsing circulation chamber. At time node B, fluid with at least the first impurity concentration flows into the regeneration device.

2. The semiconductor centrifugal cleaning process according to claim 1, characterized in that: During one regeneration cycle, a fluid with a second impurity concentration is mixed with a fluid with a first impurity concentration in the first rinsing circulation chamber and flows into the regeneration device.

3. The semiconductor centrifugal cleaning process according to claim 1, characterized in that: During a regeneration cycle, fluid with only a first impurity concentration flows directly from the first rinsing chamber into the regeneration device.

4. The semiconductor centrifugal cleaning process according to claim 1, characterized in that: During the transfer of the carrier containing semiconductor devices to the cleaning chamber, the first rinsing chamber, and the second rinsing chamber, the chambers are in an empty liquid state. After the semiconductor device enters the cleaning chamber, the first rinsing chamber, and the second rinsing chamber, each chamber has a liquid injection stage, a washing stage, and a dehydration stage.

5. The semiconductor centrifugal cleaning process according to claim 4, characterized in that: During the liquid injection phase, the semiconductor device is in a static state; During the washing phase, the semiconductor device undergoes alternating forward and reverse rotation. During the dehydration stage, the semiconductor device rotates in one direction.

6. A semiconductor centrifugal cleaning apparatus for performing a semiconductor centrifugal cleaning process according to any one of claims 1-5, characterized in that, include: The washing cylinder, the first rinsing cylinder, the second rinsing cylinder, and the drying cylinder are arranged in sequence. The front end of the washing cylinder is provided with a feeding station, and the rear end of the drying cylinder is provided with a discharging station. The cleaning circulation tank facilitates the reciprocating flow of the cleaning solution between itself and the cleaning tank. The first rinsing circulation cylinder completes the reciprocating flow of rinsing liquid with the first rinsing cylinder; The second rinsing circulation cylinder completes the reciprocating flow of rinsing liquid between itself and the second rinsing cylinder; An execution unit is used to perform the station transfer of semiconductor devices; The regeneration device is installed between the first rinsing circulation cylinder and the second rinsing circulation cylinder to complete the reciprocating flow of fluid between the first rinsing circulation cylinder, the regeneration device and the second rinsing circulation cylinder.

7. A semiconductor centrifugal cleaning device according to claim 6, characterized in that: The first rinsing circulation drum is equipped with a three-way valve and connected to a pipeline for connecting the first rinsing drum, the first rinsing circulation drum and the regeneration device respectively.

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