Semiconductor production equipment and control method and control device thereof

Abstract

The invention discloses semiconductor production equipment and a control method and a control device thereof, and the control method comprises the steps: obtaining the actually measured film thickness d of a substrate; calculating a difference value between the actually measured film layer thickness d and the designed film layer thickness d0 to obtain an actually measured film layer thickness difference d; acquiring an actually measured temperature T in the reaction chamber; calculating a difference value between the actually measured temperature T and a design temperature T0 to obtain an actually measured temperature difference T; calculating a first film layer thickness difference d1 generated by temperature influence according to the actually measured temperature difference T; calculating a difference value between the actually measured film layer thickness difference d and the first film layer thickness difference d1 to obtain a second film layer thickness difference d2; and calculating the flow regulation value Q1 of the process gas in the next production period according to the second film layer thickness difference d2. According to the control method, the film layer thickness of the substrate obtained in the next production cycle can be closer to the designed film layer thickness, so that the quality and yield of products are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a semiconductor production equipment and a control method and a control device thereof. Background Art

[0002] Semiconductor production equipment, such as coating equipment, is used to coat substrates such as silicon wafers. To ensure production quality, the film thickness on the substrate surface must closely match the designed thickness. However, in actual production, due to factors such as uneven temperature and reaction gas distribution within the coating chamber, the film thickness on the substrate often fails to reach the designed thickness, which can affect product quality.

[0003] Therefore, how to provide a solution to overcome or alleviate the above-mentioned defects is still a technical problem that needs to be solved urgently by those skilled in the art. Summary of the Invention

[0004] The object of the present invention is to provide a semiconductor production equipment and its control method and control device, wherein the control method can make the film thickness of the substrate obtained in the next production cycle closer to the designed film thickness, thereby improving the quality and yield of the product.

[0005] In order to solve the above technical problems, the present invention provides a control method for semiconductor production equipment, including: obtaining the measured film thickness d of the substrate; calculating the difference between the measured film thickness d and the designed film thickness d0 to obtain the measured film thickness difference △d; obtaining the measured temperature T in the reaction chamber; calculating the difference between the measured temperature T and the designed temperature T0 to obtain the measured temperature difference △T; calculating the first film thickness difference △d1 caused by the temperature according to the measured temperature difference △T; calculating the difference between the measured film thickness difference △d and the first film thickness difference △d1 to obtain the second film thickness difference △d2; and calculating the flow adjustment value △Q1 of the process gas in the next production cycle according to the second film thickness difference △d2.

[0006] Using the above scheme, embodiments of the present invention can calculate the measured film thickness difference Δd of the substrate and the first film thickness difference Δd1, which is affected by the measured temperature difference ΔT. Then, by subtracting the measured film thickness difference Δd from the first film thickness difference Δd1, a second film thickness difference Δd2, which is primarily affected by the process gas flow rate, can be obtained. The process gas flow adjustment value ΔQ1 for the next production cycle is then calculated based on the second film thickness difference Δd2. This provides a more accurate flow adjustment value ΔQ1, which can then be used to adjust the process gas flow rate for the next production cycle based on the flow adjustment value ΔQ1. This adjusts the substrate film thickness for the next production cycle, ensuring that the substrate film thickness obtained in the next production cycle is closer to the designed film thickness, effectively improving product quality and yield.

[0007] Optionally, the first film layer thickness difference Δd1 is equal to the product of the measured temperature difference ΔT and a first coefficient Y.

[0008] Optionally, the flow adjustment value ΔQ1 is equal to the inverse of a quotient of the second membrane layer thickness difference Δd2 and a second coefficient X.

[0009] Optionally, the second film layer thickness difference Δd2 is a single parameter of a workstation interval in the reaction chamber; or, the second film layer thickness difference Δd2 is an average parameter of each workstation interval in the reaction chamber.

[0010] Optionally, the control method further includes: calculating a temperature adjustment value ΔT1 in a next production cycle according to the flow adjustment value ΔQ1.

[0011] Optionally, the temperature adjustment value ΔT1 and the flow adjustment value ΔQ1 have the following relationship: ΔT1=-(ΔQ1·X+Δd) / Y; wherein Y is the first coefficient and X is the second coefficient.

[0012] The present invention also provides a control device for semiconductor production equipment, comprising: a first acquisition module for acquiring the measured film thickness d of the substrate; a first calculation module, the first calculation module being communicatively connected to the first acquisition module, the first calculation module being used to receive the measured film thickness d, and the first calculation module being further used to calculate the difference between the measured film thickness d and the designed film thickness d0, so as to obtain the measured film thickness difference Δd; a second acquisition module for acquiring the measured temperature T in the reaction chamber; a second calculation module, the second calculation module being communicatively connected to the second acquisition module, the second calculation module being used to receive the measured temperature T, and the second calculation module being further used to calculate the difference between the measured temperature T and the designed temperature T0, so as to obtain the measured temperature difference ΔT; a third calculation module, the third calculation module being communicatively connected to the second calculation module. The first and third calculation modules are communicatively connected to each other, the third calculation module is used to receive the measured temperature difference △T, and to calculate the first film layer thickness difference △d1 affected by temperature according to the measured temperature difference △T; the fourth calculation module is communicatively connected to the first and third calculation modules, the fourth calculation module is used to receive the measured film layer thickness difference △d and the first film layer thickness difference △d1, and to calculate the difference between the measured film layer thickness difference △d and the first film layer thickness difference △d1 to obtain the second film layer thickness difference △d2; the fifth calculation module is communicatively connected to the fourth calculation module, the fifth calculation module is used to receive the second film layer thickness difference △d2, and to calculate the flow adjustment value △Q1 of the process gas in the next production cycle according to the second film layer thickness difference △d2.

[0013] The present invention also provides a semiconductor production equipment, including an equipment body, an air intake module and a control module. A reaction chamber is formed inside the equipment body. The air intake module is connected to the reaction chamber and is used to introduce reaction gas into the reaction chamber. The control module and the air intake module are communicatively connected. The control module includes a processor and a memory storing a computer program. When the processor executes the computer program, the control method of the semiconductor production equipment is implemented. The air intake module adjusts the air intake flow rate of the process gas according to the flow adjustment value △Q1 in the next production cycle.

[0014] Optionally, the air inlet module includes a main gas pipeline and an auxiliary gas pipeline, the reaction chamber includes a plurality of workstation intervals arranged along the axial direction, the auxiliary gas pipeline is connected to at least part of the workstation intervals, and is used to replenish gas into the corresponding workstation intervals. In the next production cycle, the auxiliary gas pipeline introduces process gas into the corresponding workstation interval according to the flow adjustment value △Q1.

[0015] Optionally, the secondary gas pipeline includes a plurality of gas flow tubes, each of which is disposed in the reaction chamber and located in the lower area of the reaction chamber, and an extension direction of each gas flow tube is consistent with the axial direction of the equipment body.

[0016] Optionally, among each of the workstation intervals, at least one of the workstation intervals is correspondingly provided with one of the airflow pipes for air intake, and the airflow pipe is arranged in the middle area of the corresponding reaction chamber in the horizontal direction; and / or, among each of the workstation intervals, at least one of the workstation intervals is correspondingly provided with at least two of the airflow pipes for air intake, and the airflow pipes are arranged at intervals in the horizontal direction of the corresponding reaction chamber.

[0017] Optionally, each of the air flow pipes is provided with an air inlet nozzle, the air inlet nozzle includes a conical tube and an air outlet cover, the conical tube has a small diameter end and a large diameter end, the air outlet cover is located at the large diameter end, and the air outlet cover is provided with a plurality of air outlet holes.

[0018] Optionally, in the air inlet nozzle, at least the surface of the air outlet cover is provided with a friction reducing coating.

[0019] Optionally, the secondary gas pipeline further includes a flow limiting plate, the flow limiting plate is provided with a flow limiting hole, and the flow limiting plate is arranged at the gas outlet of the gas flow pipe.

[0020] Optionally, the control module is further used to control the introduction of purge gas into the air intake module. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic flow chart of a control method for semiconductor production equipment provided by an embodiment of the present invention;

[0022] Figure 2 A simplified structural diagram of a control device for semiconductor production equipment provided by an embodiment of the present invention;

[0023] Figure 3 A simplified structural diagram of a semiconductor production device provided by an embodiment of the present invention;

[0024] Figure 4 for Figure 3 A schematic diagram of the arrangement of the gas flow tubes in the auxiliary gas pipeline from a top-down perspective;

[0025] Figure 5 The relative position diagram of the flow limiting plate and the auxiliary gas pipeline;

[0026] Figure 6 It is a structural diagram of the air intake nozzle and the tube body.

[0027] Reference numerals:

[0028] 100 - first acquisition module; 200 - first calculation module; 300 - second acquisition module; 400 - second calculation module; 500 - third calculation module; 600 - fourth calculation module; 700 - fifth calculation module; 800 - sixth calculation module;

[0029] 1000-equipment body; 1100-reaction chamber;

[0030] 2000-vehicle;

[0031] 3000 - air inlet module; 3100 - main gas line; 3200 - auxiliary gas line; 3210 - air flow tube; 3211 - tube body; 3212 - air inlet nozzle; 3212A - conical cylinder; 3212B - air outlet cover; 3212B1 - air outlet hole; 3220 - flow limiting plate; 3221 - flow limiting hole;

[0032] 4000-Control module. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0034] In the description of the embodiments of the present invention, the terms "first," "second," "third," "fourth," "fifth," and "sixth" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly specifying the number of the technical features indicated. Therefore, a feature specified as "first," "second," "third," "fourth," "fifth," and "sixth" may explicitly or implicitly include one or more of such features.

[0035] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connect" and "connect" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.

[0036] The directional terms mentioned in the embodiments of the present invention, such as "inside" and "outside", are merely references to the directions in the accompanying drawings. Therefore, the directional terms used are intended to better and more clearly illustrate and understand the embodiments of the present invention, and do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. Furthermore, unless otherwise specified in this application, the term "multiple" used in this application means two or more.

[0037] In the description of the embodiments of the present invention, the terms "comprises," "comprising," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0038] In the description of the embodiments of the present invention, "and / or" is simply a description of the association relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent three situations: A exists alone, A and B exist simultaneously, and B exists alone. Furthermore, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0039] Please refer to Figure 1 , Figure 1 The present invention provides a flow chart of a method for controlling semiconductor production equipment.

[0040] An embodiment of the present invention provides a semiconductor production device, for example, a coating device. The coating device can specifically use processes such as plasma enhanced chemical vapor deposition (PECVD) and plasma enhanced atomic layer deposition (PEALD) to deposit and coat the surface of a substrate such as a silicon wafer.

[0041] The semiconductor production equipment described above may include an equipment body, a carrier, and an air intake module. The equipment body may be a tubular furnace, etc., within which a reaction chamber may be formed. The carrier may be a quartz boat or a graphite boat, etc., which is used to carry substrates such as silicon wafers and can enter and exit the reaction chamber as a whole, thereby facilitating centralized transportation and processing of substrates. The air intake module can introduce process gases into the reaction chamber to create a specific reaction atmosphere within the reaction chamber, thereby meeting the requirements of substrate processing.

[0042] As described in the background technology section, in the actual production process, there is often a certain difference between the film thickness on the substrate surface and the designed thickness, which will affect the quality and yield of the product.

[0043] Based on this, an embodiment of the present invention provides a control method for semiconductor production equipment. This control method can obtain the measured film thickness of the substrate after the current production cycle is completed, and compare the measured film thickness with the designed film thickness. Then, after a series of calculations, the flow adjustment value of the process gas for the next production cycle can be obtained to adjust the flow of the process gas, thereby improving the difference between the measured film thickness and the designed film thickness of the substrate in the next production cycle, so that the measured film thickness of the substrate can be close to the designed film thickness. In this way, the quality and yield of the product can be greatly improved.

[0044] Specifically, if Figure 1 As shown, the above control method at least includes the following steps S100 to S700.

[0045] Step S100, obtaining the measured film thickness d of the substrate.

[0046] Step S100 can be specifically performed after the current production cycle ends. The above-mentioned measured film thickness d can be detected by one or more thickness detection components. The specific type and detection principle of the thickness detection component are not limited here. In actual application, those skilled in the art can select according to specific needs, as long as it can meet the requirements of use. For example, the thickness detection component can detect the above-mentioned measured film thickness d based on spectral reflectometry, ellipsometry, laser measurement, X-ray fluorescence spectroscopy, etc.

[0047] In step S200, the difference between the measured film thickness d and the designed film thickness d0 is calculated to obtain the measured film thickness difference Δd. It can be seen that the designed film thickness d0 is a given value.

[0048] Step S300: obtaining the measured temperature T in the reaction chamber.

[0049] Step S300 can be performed during the current production cycle, or after the current production cycle ends, as long as the actual temperature T in the reaction chamber can be obtained. The actual temperature T can be detected by a temperature detection component in the form of a thermocouple or the like.

[0050] Step S400: Calculate the difference between the measured temperature T and the design temperature T0 to obtain the measured temperature difference ΔT. It can be seen that the design temperature T0 is a given value.

[0051] Step S500 , calculating the first film thickness difference Δd1 affected by temperature according to the measured temperature difference ΔT.

[0052] During the actual production process, factors that significantly influence the film thickness on the substrate surface include the process gas flow rate and the reaction chamber temperature. Step S500 calculates the first film thickness difference Δd1, resulting from the difference between the measured temperature T and the design temperature T0, based on the measured temperature difference ΔT. This first film thickness difference Δd1 is a theoretical value and is used for calculation in step S600.

[0053] In this embodiment of the present invention, step S200 is executed after step S100, step S400 is executed after step S300, and step S500 is executed after step S400. However, the order in which any one of steps S100 and S200 and any one of steps S300 to S500 are executed in the specific execution process is not limited. Taking steps S100 and S300 as an example, the two can be executed simultaneously or one after the other.

[0054] In step S600, the difference between the measured film thickness difference Δd and the first film thickness difference Δd1 is calculated to obtain a second film thickness difference Δd2. It can be seen that the second film thickness difference Δd2 is the film thickness difference after eliminating the influence of the measured temperature difference ΔT. In other words, the second film thickness difference Δd2 is the film thickness difference primarily affected by the process gas flow rate.

[0055] Step S700 , calculating a flow adjustment value ΔQ1 of the process gas in the next production cycle according to the second film thickness difference Δd2 .

[0056] Using the above scheme, the embodiment of the present invention can calculate the measured film thickness difference Δd through steps S100 and S200, and can calculate the first film thickness difference Δd1 caused by the measured temperature difference ΔT through steps S300 to S500. Then, in step S600, the measured film thickness difference Δd and the first film thickness difference Δd1 are subtracted to obtain the second film thickness difference Δd2 mainly affected by the process gas flow rate. Then, in step S700, the process gas flow rate adjustment value ΔQ1 for the next production cycle is calculated based on the second film thickness difference Δd2. In this way, the obtained flow rate adjustment value ΔQ1 is more accurate. Then, based on the flow rate adjustment value ΔQ1, the process gas flow rate in the next production cycle can be adjusted to achieve the purpose of adjusting the film thickness of the substrate in the next production cycle. This ensures that the film thickness of the substrate obtained in the next production cycle is closer to the designed film thickness, effectively improving product quality and yield.

[0057] In some implementations, the first film thickness difference Δd1 may be equal to the product of the measured temperature difference ΔT and the first coefficient Y.

[0058] The first coefficient Y is a fitting coefficient between the first film thickness difference Δd1 and the measured temperature difference ΔT, and can be obtained by fitting a certain amount of historical data. The specific value of the first coefficient Y is not limited herein. In practical applications, those skilled in the art can calculate and obtain it by combining certain simulation models, etc.

[0059] In some implementations, the flow adjustment value ΔQ1 is equal to the inverse of the quotient of the second membrane thickness difference Δd2 and the second coefficient X.

[0060] The second coefficient X is a fitting coefficient between the flow adjustment value ΔQ1 and the second membrane thickness difference Δd2, and can be obtained by fitting a certain amount of historical data. The specific value of the second coefficient X is not limited herein. In practical applications, those skilled in the art can calculate and obtain it by combining certain simulation models.

[0061] In some implementations, the control method provided by the embodiment of the present invention may further include the following step S800.

[0062] Step S800 , calculating the temperature adjustment value ΔT1 in the next production cycle according to the flow adjustment value ΔQ1 .

[0063] That is, in addition to the flow regulation control scheme, the embodiment of the present invention can also add a temperature regulation control scheme, which can more comprehensively adjust the process parameters in the next production cycle, so as to better adjust the film thickness of the substrate in the next production cycle, so that the film thickness of the substrate obtained in the next production cycle can be closer to the designed film thickness, which can effectively improve the quality and yield of the product.

[0064] In practical applications, embodiments of the present invention may employ both the aforementioned flow control scheme and the temperature control scheme to enhance comprehensiveness of regulation. Alternatively, embodiments of the present invention may employ only the flow control scheme, thereby minimizing temperature variations between production cycles and thereby reducing the impact on film composition.

[0065] In some implementations, the temperature adjustment value ΔT1 and the flow adjustment value ΔQ1 have the following relationship: ΔT1=-(ΔQ1·X+Δd) / Y; where Y is the first coefficient and X is the second coefficient.

[0066] With respect to each of the aforementioned implementations, the reaction chamber of the device body may have a plurality of workstations arranged along the axial direction, and each workstation may contain a substrate carried by a carrier.

[0067] In some implementations, the second film thickness difference Δd2 obtained in step S600 can be a single parameter of a workstation interval in the reaction chamber. In this case, the obtained flow adjustment value ΔQ1 and temperature adjustment value ΔT1 can both be specific to the workstation interval. In this way, in an embodiment of the present invention, each workstation interval can have a separate flow adjustment value ΔQ1 and temperature adjustment value ΔT1. Accordingly, it is possible to achieve separate regulation of each workstation interval, which is more precise and targeted, so that the film thickness of the substrate in each workstation interval can be close to or even reach the designed film thickness, which is also beneficial to reducing the difference in film thickness on the substrate surface in each workstation interval, and can improve the uniformity of film thickness in each workstation interval.

[0068] For example, assume there are two workstations, workstation e and workstation f. The measured film thickness at workstation e is d = 77 nm, while the measured film thickness at workstation f is d = 76 nm. The designed film thickness is d0 = 80 nm. The measured temperature at workstation e is T = 505°C, while the measured temperature at workstation f is T = 507°C. The designed temperature is T0 = 500°C. The first parameter Y = 0.5 nm / °C, and the second parameter X = 0.01 nm / sccm. The relevant parameters measured at workstations e and f can be found in Table 1 below.

[0069] Table 1 Related parameters of interval e and interval f

[0070]

[0071] As shown in Table 1, in the next production cycle, the process gas flow rate of station e can be increased by 550 sccm, and the temperature of station e can be reduced by 5°C. The process gas flow rate of station f can be increased by 750 sccm, and the temperature of station f can be reduced by 5°C.

[0072] In some implementations, the second film thickness difference Δd2 obtained in step S600 may be an average parameter for each workstation within the reaction chamber. In this case, the flow adjustment value ΔQ1 obtained may be for the entire reaction chamber, rather than for each workstation. This simplifies the implementation of the control method provided by embodiments of the present invention.

[0073] Still taking the aforementioned workstations e and f as an example for description, the relevant parameters measured at workstations e and f can be found in Table 2 below.

[0074] Table 2 Related parameters of interval e and interval f

[0075]

[0076] As shown in Table 2, in the next production cycle, the process gas flow rate in the reaction chamber can be increased by 650 sccm, and the temperature of station e can be reduced by 7° C., and the temperature of station f can be reduced by 5° C.

[0077] Please refer to Figure 2 , Figure 2 This is a simplified structural diagram of a control device for semiconductor production equipment provided by an embodiment of the present invention.

[0078] The embodiment of the present invention further provides a control device for semiconductor production equipment, which can be integrated into a control module. The control module can include, for example, a programmable logic controller (PLC). Figure 2 As shown, the control device may include at least a first acquisition module 100 , a first calculation module 200 , a second acquisition module 300 , a second calculation module 400 , a third calculation module 500 , a fourth calculation module 600 and a fifth calculation module 700 .

[0079] The first acquisition module 100 is used to obtain the measured film thickness d of the substrate.

[0080] The first calculation module 200 is in communication with the first acquisition module 100 . The first calculation module 200 is used to receive the measured film thickness d. The first calculation module 200 is also used to calculate the difference between the measured film thickness d and the designed film thickness d0 to obtain the measured film thickness difference Δd.

[0081] The second acquisition module 300 is used to obtain the measured temperature T in the reaction chamber.

[0082] The second calculation module 400 is in communication with the second acquisition module 300 . The second calculation module 400 is configured to receive the measured temperature T and calculate the difference between the measured temperature T and the design temperature T0 to obtain the measured temperature difference ΔT.

[0083] The third calculation module 500 is in communication with the second calculation module 400 and is configured to receive the measured temperature difference ΔT and calculate a first film thickness difference Δd1 affected by temperature based on the measured temperature difference ΔT. The first film thickness difference Δd1 may be equal to the product of the measured temperature difference ΔT and the first coefficient Y.

[0084] The fourth calculation module 600 is communicatively connected to the first calculation module 200 and the third calculation module 500. The fourth calculation module 600 is used to receive the measured film layer thickness difference △d and the first film layer thickness difference △d1, and to calculate the difference between the measured film layer thickness difference △d and the first film layer thickness difference △d1 to obtain the second film layer thickness difference △d2.

[0085] The fifth calculation module 700 is communicatively connected to the fourth calculation module 600. The fifth calculation module 700 is configured to receive the second film thickness difference Δd2 and calculate a flow adjustment value ΔQ1 for the process gas in the next production cycle based on the second film thickness difference Δd2. The flow adjustment value ΔQ1 is equal to the inverse of the quotient of the second film thickness difference Δd2 and the second coefficient X.

[0086] In the above-described scheme, the control device provided by the embodiment of the present invention can obtain a flow adjustment value ΔQ1, and this flow adjustment value ΔQ1 can largely eliminate the influence of the measured temperature difference ΔT during the acquisition process, making the flow adjustment value ΔQ1 more accurate. Then, based on this flow adjustment value ΔQ1, the flow rate of the process gas in the next production cycle can be adjusted to achieve the purpose of adjusting the film thickness of the substrate in the next production cycle. The film thickness of the substrate obtained in the next production cycle can be closer to the designed film thickness, which can effectively improve product quality and yield.

[0087] In some implementations, the control device provided by the embodiment of the present invention may further include a sixth calculation module 800 .

[0088] The sixth calculation module 800 can be in communication with the fifth calculation module 700 and configured to receive the flow adjustment value ΔQ1 and calculate the temperature adjustment value ΔT1 for the next production cycle based on the flow adjustment value ΔQ1. Specifically, the temperature adjustment value ΔT1 and the flow adjustment value ΔQ1 can have the following relationship: ΔT1 = -(ΔQ1·X + Δd) / Y, where Y is the first coefficient and X is the second coefficient.

[0089] Through the setting of the sixth calculation module 800, the control device provided in the embodiment of the present invention can provide both flow regulation and temperature regulation. The regulation is more comprehensive and is more conducive to ensuring that the film thickness of the substrate obtained in the next production cycle can be close to the designed film thickness, which can effectively improve the quality and yield of the product.

[0090] Please refer to Figure 3-Figure 6 , Figure 3 A simplified structural diagram of a semiconductor production device provided by an embodiment of the present invention; Figure 4 for Figure 3 A schematic diagram of the arrangement of the gas flow tubes in the auxiliary gas pipeline from a top-down perspective; Figure 5 The relative position diagram of the flow limiting plate and the auxiliary gas pipeline; Figure 6 It is a structural diagram of the air intake nozzle and the tube body.

[0091] like Figure 3As shown, an embodiment of the present invention provides a semiconductor production device, which can be, for example, a coating device that uses processes such as PECVD and PEALD to deposit and coat the surface of substrates such as silicon wafers. The semiconductor production device includes a device body 1000, a carrier 2000, an air intake module 3000, and a control module 4000.

[0092] The interior of the device body 1000 forms a reaction chamber 1100. It can be seen that the device body 1000 has a length, a width, and a height. The length is the direction in which the reaction chamber 1100 extends, i.e., the axial direction of the device body 1000 (reaction chamber 1100), and can also be referred to as the longitudinal direction. The width is the transverse direction. The height is the vertical direction, and can also be referred to as the vertical direction. Any two of the length, width, and height directions can be perpendicular.

[0093] The carrier 2000 can be a quartz boat or a graphite boat, etc., which can carry substrates such as silicon wafers and can be moved in and out of the reaction chamber 1100 as a whole. In some implementations, the reaction chamber 1100 can accommodate only one carrier 2000. In other implementations, the reaction chamber 1100 can accommodate at least two carriers 2000 to improve the production efficiency of deposition coating; for example, see Figure 3 The number of carriers 2000 can be two, and the two carriers 2000 can be arranged at intervals along the axial direction of the device body 1000.

[0094] The air inlet module 3000 is connected to the reaction chamber 1100 and is used to introduce reaction gas into the reaction chamber 1100 .

[0095] Control module 4000 is communicatively connected to air intake module 3000. Control module 4000 includes a processor and a memory storing a computer program. The processor and memory are communicatively connected. When executing the computer program in the memory, the processor implements the aforementioned control method for semiconductor production equipment to obtain an air intake flow adjustment value ΔQ1. Air intake module 3000 can then adjust the intake flow rate of the process gas during the next production cycle based on the flow adjustment value ΔQ1.

[0096] As mentioned above, the above-mentioned flow adjustment value △Q1 is highly accurate. After adjusting the intake flow rate of the process gas according to the flow adjustment value △Q1, the purpose of adjusting the film thickness of the substrate in the next production cycle can be achieved, so that the film thickness of the substrate obtained in the next production cycle can be closer to the designed film thickness, which can effectively improve the quality and yield of the product.

[0097] In some implementations, the air intake module 3000 may include a main gas line 3100 .

[0098] The main gas pipeline 3100 can be connected to the furnace mouth of the equipment body 1000 ( Figure 3 The left end of the main gas line 3100 is connected to the main gas line 3100 for introducing process gas into the reaction chamber 1100 through the furnace port of the equipment body 1000. During initial operation of the equipment, only the main gas line 3100 can be opened to ventilate the reaction chamber 1100.

[0099] The reaction chamber 1100 may include a plurality of workstations arranged along the axial direction. The number of workstations may be set as needed and is not limited here. For example, see Figure 4 , Figure 4 Six workstations are shown: workstation a, workstation b, workstation c, workstation d, workstation e, and workstation f. In actual production, if gas is only introduced through the main gas line 3100, the plasma density within the reaction chamber 1100 will decrease. Specifically, the plasma density in the workstations relatively close to the furnace opening (for example, workstation a) will be relatively high, while the plasma density in the workstations relatively far from the furnace opening (for example, workstation f) will be relatively low. This can easily result in the film thickness of the substrate in some workstations being relatively low, making it difficult to achieve the set film thickness d0.

[0100] In this regard, the air intake module 3000 in the embodiment of the present invention may further include an auxiliary gas pipeline 3200, which can be connected to at least part of the workstation intervals, for example, at least can be connected to the workstation intervals relatively far away from the furnace mouth, so as to supply gas to these workstation intervals, thereby specifically supplying gas to the workstation intervals with relatively low plasma density to increase the film thickness of the substrate in these workstation intervals.

[0101] With this arrangement, in the next production cycle, the gas inlet flow of the main gas pipeline 3100 may not change, while the auxiliary gas pipeline 3200 may adjust the process gas flow in the corresponding workstation interval according to the flow adjustment value ΔQ1.

[0102] It should be understood that in some other implementations of the present invention, the air intake module 3000 may also only include the main gas pipeline 3100, and then the main gas pipeline 3100 performs flow regulation as a whole according to the flow regulation value △Q1, which is also feasible.

[0103] In some implementations, the secondary gas pipeline 3200 may include multiple gas flow tubes 3210. Each gas flow tube 3210 may be disposed within the reaction chamber 1100 and located in the lower region of the reaction chamber 1100. The extension direction of each gas flow tube 3210 is aligned with the axial direction of the apparatus body 1000. In this way, the gas inlet direction of the secondary gas pipeline 3200 may be substantially aligned with the gas inlet direction of the primary gas pipeline 3100, thereby reducing vortexes within the reaction chamber 1100 caused by the addition of the secondary gas pipeline 3200 and promoting more uniform distribution of the plasma.

[0104] At least one of the workstations may be provided with a corresponding airflow tube 3210 for air intake. In this case, the airflow tube 3210 may be located in the middle of the corresponding reaction chamber 1100 in the horizontal direction. This improves the uniformity of air intake within the workstation through the airflow tube 3210. Alternatively, at least one of the workstations may be provided with at least two airflow tubes 3210 for air intake. In this case, the airflow tubes 3210 may be spaced apart in the horizontal direction of the corresponding reaction chamber 1100. This also improves the uniformity of air intake within the workstation through the airflow tubes 3210.

[0105] In a specific scenario, Figure 4 As shown, the lengths of the airflow tubes 3210 can vary. The shortest airflow tube 3210 can be positioned in the middle of the horizontal section, while the remaining airflow tubes can be positioned, from shortest to longest, on either side of the shortest airflow tube 3210, to form a symmetrical arrangement. Thus, station b can be equipped with one airflow tube 3210, while stations c, d, e, and f can each be symmetrically equipped with two airflow tubes 3210, effectively improving air intake uniformity.

[0106] In some implementations, such as Figure 5 As shown, the secondary gas line 3200 may further include a flow restriction piece 3220 .

[0107] The flow limiting plate 3220 can be provided with a flow limiting hole 3221. The flow limiting plate 3220 can be provided at the outlet of the air flow tube 3210 to adjust the outlet flow of the air flow tube 3210. The aperture of the flow limiting hole 3221 can be adjusted as needed and is not limited here. For example, it can be selected between 1 mm and 5 mm.

[0108] In some implementations, such as Figure 6 As shown, each air flow tube 3210 may include a tube body 3211 and an air intake nozzle 3212 .

[0109] The air intake nozzle 3212 may include a conical barrel 3212A and an air outlet cover 3212B. The conical barrel 3212A may have a small diameter end and a large diameter end, wherein the small diameter end is used to connect to the tube body 3211, and the large diameter end is used to connect to the air outlet cover 3212B. The air outlet cover 3212B may be provided with a plurality of air outlet holes 3212B1. With this arrangement, the air intake nozzle 3212 is gradually expanded in the direction away from the tube body 3211, which can effectively reduce the flow rate of the intake air. In addition, the air is discharged through the multiple air outlet holes 3212B1 on the air outlet cover 3212B, which can cut the intake air into multiple micro-streams, effectively reducing the occurrence of vortices and helping to improve the uniformity of the intake air.

[0110] In some implementations, in the air intake nozzle 3212, at least the surface of the air outlet cover 3212B can be provided with a friction-reducing coating. The friction-reducing coating can be, for example, a diamond-like coating, whose friction coefficient is only 0.08, which can greatly reduce the possibility of clogging of the air outlet hole 3212B1 of the air intake nozzle 3212.

[0111] In some implementations, the control module 4000 is further configured to control the flow of a purge gas, such as nitrogen or an inert gas, into the air inlet module 3000 to clean the air outlet 3212B1. This can also reduce the possibility of clogging the air outlet 3212B1 of the air inlet nozzle 3212.

[0112] The purge gas injection period is not limited here. In practical applications, those skilled in the art can select it according to specific needs, as long as it can meet the requirements of use.

[0113] The above are only preferred embodiments of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A control method for semiconductor production equipment, characterized in that: include: Obtain the measured film thickness d of the substrate; Calculating the difference between the measured film thickness d and the designed film thickness d0 to obtain the measured film thickness difference Δd; Obtaining the measured temperature T in the reaction chamber; Calculating the difference between the measured temperature T and the design temperature T0 to obtain the measured temperature difference ΔT; Calculating the first film thickness difference Δd1 affected by temperature according to the measured temperature difference ΔT; Calculating the difference between the measured film thickness difference Δd and the first film thickness difference Δd1 to obtain a second film thickness difference Δd2; The flow adjustment value ΔQ1 of the process gas in the next production cycle is calculated according to the second film layer thickness difference Δd2.

2. The control method for semiconductor production equipment according to claim 1, characterized in that: The first film layer thickness difference Δd1 is equal to the product of the measured temperature difference ΔT and the first coefficient Y.

3. The control method for semiconductor production equipment according to claim 1, characterized in that: The flow adjustment value ΔQ1 is equal to the inverse of the quotient of the second film thickness difference Δd2 and the second coefficient X.

4. The control method for semiconductor production equipment according to claim 1, characterized in that: The second film thickness difference Δd2 is a single parameter of a station interval in the reaction chamber; or, The second film layer thickness difference Δd2 is an average parameter of each workstation interval in the reaction chamber.

5. The control method for semiconductor production equipment according to any one of claims 1 to 4, characterized in that: The control method further includes: The temperature adjustment value ΔT1 in the next production cycle is calculated based on the flow adjustment value ΔQ1.

6. The control method for semiconductor production equipment according to claim 5, characterized in that: The relationship between the temperature adjustment value ΔT1 and the flow adjustment value ΔQ1 is as follows: △T1=-(△Q1·X+△d) / Y; Wherein, Y is the first coefficient and X is the second coefficient.

7. A control device for semiconductor production equipment, characterized in that: include: A first acquisition module is used to obtain the measured film thickness d of the substrate; a first calculation module, the first calculation module being communicatively connected to the first acquisition module, the first calculation module being configured to receive the measured film thickness d, and further configured to calculate a difference between the measured film thickness d and the designed film thickness d0 to obtain a measured film thickness difference Δd; A second acquisition module is used to obtain the measured temperature T in the reaction chamber; a second calculation module, the second calculation module being communicatively connected to the second acquisition module, the second calculation module being configured to receive the measured temperature T, and further configured to calculate a difference between the measured temperature T and the design temperature T0 to obtain a measured temperature difference ΔT; a third calculation module, the third calculation module being in communication with the second calculation module, the third calculation module being configured to receive the measured temperature difference ΔT and to calculate a first film layer thickness difference Δd1 affected by temperature based on the measured temperature difference ΔT; a fourth calculation module, the fourth calculation module being communicatively connected to the first calculation module and the third calculation module, the fourth calculation module being configured to receive the measured film layer thickness difference Δd and the first film layer thickness difference Δd1, and to calculate a difference between the measured film layer thickness difference Δd and the first film layer thickness difference Δd1 to obtain a second film layer thickness difference Δd2; A fifth calculation module is communicatively connected to the fourth calculation module, and is used to receive the second film layer thickness difference Δd2 and calculate the flow adjustment value ΔQ1 of the process gas in the next production cycle according to the second film layer thickness difference Δd2.

8. A semiconductor production equipment, characterized in that The device comprises an equipment body, an air intake module and a control module. A reaction chamber is formed inside the equipment body. The air intake module is connected to the reaction chamber and is used to introduce reaction gas into the reaction chamber. The control module is communicatively connected to the air intake module. The control module comprises a processor and a memory storing a computer program. When the processor executes the computer program, the control method for semiconductor production equipment as described in any one of claims 1 to 6 is implemented. The air intake module adjusts the air intake flow rate of the process gas according to the flow adjustment value △Q1 in the next production cycle.

9. The semiconductor production equipment according to claim 8, characterized in that: The air inlet module includes a main gas pipeline and an auxiliary gas pipeline. The reaction chamber includes a plurality of workstation intervals arranged along the axial direction. The auxiliary gas pipeline is connected to at least part of the workstation intervals and is used to supply gas to the corresponding workstation intervals. In the next production cycle, the auxiliary gas pipeline introduces process gas into the corresponding workstation interval according to the flow adjustment value △Q1.

10. The semiconductor production equipment according to claim 9, characterized in that: The secondary gas pipeline includes a plurality of gas flow tubes, each of which is disposed in the reaction chamber and located in the lower area of the reaction chamber. The extending direction of each gas flow tube is consistent with the axial direction of the equipment body.

11. The semiconductor production equipment according to claim 10, characterized in that: Among each of the workstation intervals, at least one of the workstation intervals is correspondingly provided with one airflow pipe for air intake, and the airflow pipe is arranged in the middle area of the corresponding reaction chamber in the horizontal direction; and / or, among each of the workstation intervals, at least one of the workstation intervals is correspondingly provided with at least two airflow pipes for air intake, and the airflow pipes are arranged at intervals in the horizontal direction of the corresponding reaction chamber.

12. The semiconductor production equipment according to claim 10, characterized in that: Each of the air flow pipes is provided with an air inlet nozzle, which includes a conical tube and an air outlet cover. The conical tube has a small diameter end and a large diameter end. The air outlet cover is located at the large diameter end and is provided with a plurality of air outlet holes.

13. The semiconductor production equipment according to claim 12, characterized in that: In the air inlet nozzle, at least the surface of the air outlet cover is provided with a friction reducing coating.

14. The semiconductor production equipment according to claim 10, characterized in that: The auxiliary gas pipeline further includes a flow limiting plate, the flow limiting plate is provided with a flow limiting hole, and the flow limiting plate is arranged at the gas outlet of the gas flow pipe.

15. The semiconductor production equipment according to any one of claims 8 to 14, characterized in that: The control module is also used to control the introduction of purge gas into the air intake module.

Images