Plasma processing apparatus and plasma processing method

Abstract

A plasma processing apparatus includes a chamber, a substrate support portion, at least one antenna, and a gas supply portion. The chamber includes a dielectric window. The dielectric window is disposed between the substrate support portion and the antenna. The RF generation unit is configured to generate a first high-frequency electric power and a second high-frequency electric power. The first high-frequency electrical power has a first frequency. The second high frequency electrical power has a second frequency. A dielectric loss of the dielectric window for the second frequency is greater than a dielectric loss of the dielectric window for the first frequency.

Description

Technical Field

[0001] Exemplary embodiments of the present invention relate to a plasma processing apparatus and a plasma processing method. Background Art

[0002] A plasma processing apparatus is used to perform plasma processing on a substrate. The plasma processing apparatus includes a chamber, a substrate support, an antenna, a gas supply, and a high-frequency power supply. The chamber includes a dielectric window. The substrate support is disposed within the chamber. The antenna is disposed outside the chamber. The dielectric window is disposed between the substrate support and the antenna. The gas supply is configured to supply gas into the chamber. The high-frequency power supply is electrically connected to the antenna. The high-frequency power supply supplies high-frequency electric power to the antenna. Patent Document 1 below discloses such a plasma processing apparatus.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2011-119658 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology for suppressing the consumption of a dielectric window.

[0008] Technical solutions to technical problems

[0009] In an exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, at least one antenna, a gas supply, and an RF generator. The chamber includes a dielectric window. The substrate support is disposed within the chamber. The at least one antenna is disposed outside the chamber. The dielectric window is disposed between the substrate support and the at least one antenna. The gas supply is configured to supply gas into the chamber. The RF generator is electrically connected to the at least one antenna. The RF generator is configured to generate a first high-frequency electric power and a second high-frequency electric power. The first high-frequency electric power has a first frequency. The second high-frequency electric power has a second frequency. The dielectric loss of the dielectric window at the second frequency is greater than the dielectric loss of the dielectric window at the first frequency.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment, consumption of the dielectric window can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus.

[0013] Figure 2FIG. 1 is a diagram showing the configuration of a power supply system and a control system in a plasma processing apparatus according to an exemplary embodiment.

[0014] Figure 3 FIG. 1 is a timing diagram of first high-frequency electric power and second high-frequency electric power in a plasma processing apparatus according to an exemplary embodiment.

[0015] Figure 4 FIG. 1 is a diagram showing the configuration of a power supply system and a control system in a plasma processing apparatus according to another exemplary embodiment.

[0016] Figure 5 (a) is a plan view of an antenna according to an exemplary embodiment. Figure 5 (b) is a plan view of an antenna according to another exemplary embodiment. Figure 5 (c) is a plan view of an antenna according to yet another exemplary embodiment.

[0017] Figure 6 (a) is a diagram showing an example of a power spectrum of high-frequency electric power having a plurality of frequency components. Figure 6 (b) shows the Figure 6 (a) is a diagram showing an example of multiple measured values of coupling efficiency of multiple frequency components to plasma. Figure 6 (c) is a diagram showing an example of a power spectrum of high-frequency electric power having a plurality of frequency components. Figure 6 (d) is a diagram showing Figure 6 (c) is a diagram showing an example of multiple measured values of coupling efficiency of multiple frequency components to plasma.

[0018] Figure 7 (a) is a diagram showing an example of a power spectrum of the second high-frequency electric power having a plurality of frequency components. Figure 7 (b) shows the Figure 7 (a) is a diagram showing an example of multiple measured values of coupling efficiency of multiple frequency components to plasma. Figure 7 (c) is a diagram showing an example of a power spectrum of the second high-frequency electric power having a plurality of frequency components.

[0019] Figure 8 is a flow chart of a plasma processing method in accordance with an exemplary embodiment. DETAILED DESCRIPTION

[0020] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In each of the drawings, the same or corresponding parts are denoted by the same reference numerals.

[0021] An example configuration of a plasma processing system will be described below. Figure 1This is a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus.

[0022] The plasma processing system includes an inductively coupled plasma processing apparatus 1 and a control unit 2. The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 101. In addition, the plasma processing apparatus 1 includes a substrate support unit 11, a gas inlet unit, and an antenna 14. The substrate support unit 11 is arranged in the plasma processing chamber 10. The antenna 14 is arranged outside the chamber 10. The antenna 14 can be composed of a coil wound around an axis extending in the vertical direction. The antenna 14 can be arranged, for example, on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The dielectric window 101 is arranged between the substrate support unit 11 and the antenna 14. The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, the sidewall 102 of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 includes at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded.

[0023] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate supporting surface for supporting the substrate W, and the annular region 111b is also referred to as a ring supporting surface for supporting the ring assembly 112.

[0024] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck, the annular insulating component, or may be arranged on both the electrostatic chuck 1111 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32 (described later) can be disposed within the ceramic component 1111a. In this case, the at least one RF / DC electrode can function as a bias electrode. Furthermore, the conductive component of the base 1110 and the at least one RF / DC electrode can also function as multiple bias electrodes. Furthermore, the electrostatic electrode 1111b can also function as a bias electrode. Thus, the substrate support portion 11 includes at least one bias electrode.

[0025] The ring assembly 112 includes one or more ring components. In one embodiment, the one or more ring components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0026] In addition, the substrate support portion 11 may include a temperature regulating module, which is configured to regulate at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature regulating module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as brine or gas can flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic component 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion, which is configured to supply heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0027] The gas inlet portion is configured to be capable of introducing at least one processing gas from the gas supply portion 20 into the plasma processing space 10s. In one embodiment, the gas inlet portion includes a central gas injection portion (CGI: Center Gas Injector) 13. The central gas injection portion 13 is arranged above the substrate support portion 11 and can be installed in a central opening portion formed in the dielectric window 101. The central gas injection portion 13 includes at least one gas supply port 13a, at least one gas flow path 13b and at least one gas inlet port 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the gas inlet port 13c through the gas flow path 13b. In addition, the gas inlet portion may include one or more side gas injection portions (SGI: Side Gas Injector) installed in one or more opening portions formed in the side wall 102 in addition to or instead of the central gas injection portion 13.

[0028] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from each corresponding gas source 21 to the gas inlet via each corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsing the flow of the at least one process gas.

[0029] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. This allows plasma to be formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a portion of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one bias electrode, a bias potential can be generated on the substrate W, allowing ions in the generated plasma to be introduced into the substrate W.

[0030] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a (RF generator) is coupled to the antenna 14 via at least one impedance matching circuit and is capable of generating a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a can be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0031] The second RF generating unit 31b is configured to be coupled to at least one bias electrode via at least one impedance matching circuit and is capable of generating a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the generated source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generated source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In addition, in various embodiments, at least one of the generated source RF signal and the bias RF signal may be pulsed.

[0032] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is configured to be connected to at least one bias electrode and is capable of generating a bias DC signal. The generated bias DC signal is applied to the at least one bias electrode.

[0033] In various embodiments, the bias DC signal can be pulsed. In this case, a sequence of voltage pulses is applied to at least one bias electrode. The voltage pulses can have a rectangular, trapezoidal, triangular, or a combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the bias DC generator 32a and at least one bias electrode. Thus, the bias DC generator 32a and the waveform generator constitute a voltage pulse generator. The voltage pulses can have either positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within a cycle. Furthermore, the bias DC generator 32a can be provided in addition to the RF power supply 31 or in place of the second RF generator 31b.

[0034] The exhaust system 40 can be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be regulated by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0035] The control unit 2 processes computer-executable instructions that enable the plasma processing apparatus 1 to perform the various steps described in the present invention. The control unit 2 can be configured to control the various elements of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 can be included in the plasma processing apparatus 1. The control unit 2 can include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 can be implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and execute the read program, thereby performing various control actions. The program can be stored in the storage unit 2a2 in advance, or it can be obtained via a medium when necessary. The obtained program is stored in the storage unit 2a2 and read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or it can be a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0036] Below, refer to Figure 2 . Figure 2 FIG. 1 is a structural diagram showing a power supply system and a control system in a plasma processing apparatus according to an exemplary embodiment. Figure 2 As shown, the plasma processing apparatus 1 may include a control unit 2. In the plasma processing apparatus 1, a first RF generator 31a may be controlled by the control unit 2. In one embodiment, the first RF generator 31a may be composed of a single high-frequency power supply 300. The high-frequency power supply 300 may include a signal generator and an amplifier. The signal generator outputs a signal having a frequency specified by the control unit 2 to the amplifier. The amplifier generates high-frequency electric power by amplifying the signal input from the signal generator and outputs the high-frequency electric power. The amplification factor of the amplifier may be specified by the control unit 2.

[0037] The first RF generator 31a is configured to generate a first high-frequency electric power RF1 and a second high-frequency electric power RF2. The first high-frequency electric power RF1 has a first frequency. The second high-frequency electric power has a second frequency. The first and second frequencies are different. For example, the second frequency can be at least 1% higher than the first frequency.

[0038] The first RF generator 31a can be electrically connected to the antenna 14 via a directional coupler 310, a sensor 33, and a matcher 34. The directional coupler 310 measures the power level of the traveling wave of the high-frequency electric power (each of the first high-frequency electric power RF1 and the second high-frequency electric power RF2) output from the first RF generator 31a and the power level of the reflected wave of the high-frequency electric power. The directional coupler 310 can determine, for example, the reflection coefficient of the high-frequency electric power (each of the first high-frequency electric power RF1 and the second high-frequency electric power RF2) output from the high-frequency power supply 300. The reflection coefficient is determined based on the power level of the traveling wave and the power level of the reflected wave. The directional coupler 310 notifies the control unit 2 of the reflection coefficient. The directional coupler 310 can be integrated with the high-frequency power supply 300.

[0039] The sensor 33 is, for example, a voltage and current sensor. The sensor 33 measures the voltage and current of the high-frequency electric power (each of the first high-frequency electric power RF1 and the second high-frequency electric power RF2) supplied to the antenna 14. The sensor 33 can determine the reflection coefficient of the high-frequency electric power (each of the first high-frequency electric power RF1 and the second high-frequency electric power RF2) based on the measured voltage and current. The sensor 33 can notify the control unit 2 of the reflection coefficient.

[0040] The matching device 34 includes an impedance matching circuit with variable impedance. The matching device 34 is connected between the first RF generator 31a and the antenna 14. The matching device 34 is configured to match the load impedance of the first RF generator 31a with the output impedance of the first RF generator 31a. The variable impedance of the matching device 34 can be controlled by the control unit 2.

[0041] In one embodiment, the plasma processing apparatus 1 may further include a first filter 35, an impedance converter 36, and a second filter 37. The first filter 35 is configured to selectively pass the first high-frequency electric power RF1. The second filter 37 is configured to pass the second high-frequency electric power RF2. The first filter 35 and the second filter 37 are respectively connected in parallel between the matcher 34 and the antenna 14. The matcher 34, the first filter 35, and the antenna 14 constitute a first electrical path. The first high-frequency electric power RF1 is supplied to the antenna 14 via the first electrical path. The matcher 34, the second filter 37, and the antenna 14 constitute a second electrical path. The second high-frequency electric power RF2 is supplied to the antenna 14 via the second electrical path.

[0042] The impedance converter 36 is connected between one of the first filter 35 and the second filter 37 and the antenna 14. Figure 2 In the example shown, the impedance transformer 36 is connected between the first filter 35 and the antenna 14 .

[0043] The matching device 34 may be configured to match the load impedance of the frequency of the high-frequency electric power selectively passing through the other of the first filter 35 and the second filter 37 with the output impedance of the first RF generating unit 31a. Figure 2 In the illustrated example, the matching unit 34 is configured to match the load impedance for the second frequency with the output impedance of the first RF generation unit 31 a .

[0044] The impedance converter 36 is configured to match the load impedance of the high-frequency electric power selectively passing through one of the first filter 35 and the second filter 37 with the output impedance of the first RF generator 31a. Figure 2 In the example shown, the impedance converter 36 is configured to match the load impedance at the frequency of the first high-frequency electric power RF1 selectively passing through the first filter 35 with the output impedance of the first RF generator 31a. The impedance converter 36 may be configured by a transformer.

[0045] Dielectric window 101 is made of a material such that the dielectric loss of dielectric window 101 at a second frequency is greater than the dielectric loss of dielectric window 101 at the first frequency. That is, the second frequency is a frequency at which the dielectric loss in dielectric window 101 is greater than the first frequency. The first and second frequencies can each be set based on the material of dielectric window 101. For example, dielectric window 101 can be made of a material that has the highest dielectric loss at the second frequency. The frequency at which the dielectric loss of the material is the highest can be adjusted by both the type and concentration of the dopant contained in the material.

[0046] The first RF generator 31a is configured to generate a first high-frequency electric power RF1. In one embodiment, the first RF generator 31a can be configured to generate the first high-frequency electric power RF1 to ignite plasma in the chamber 10. The first high-frequency electric power RF1 can be supplied to the antenna 14 via a first electrical path. The first RF generator 31a is configured to generate a second high-frequency electric power RF2. In one embodiment, the first RF generator 31a can be configured to generate a second high-frequency electric power RF2 to maintain the ignited plasma in the chamber 10. The second high-frequency electric power RF2 can be supplied to the antenna 14 via a second electrical path.

[0047] When the dielectric loss in dielectric window 101 is small, the loss of electric energy coupled to the plasma can be suppressed. Therefore, by supplying first high-frequency electric power RF1 to antenna 14 to ignite plasma, plasma can be efficiently ignited in chamber 10 .

[0048] When the dielectric loss in dielectric window 101 is large, the potential difference between the potential of the lower surface of dielectric window 101 and the potential of the plasma decreases. Therefore, when the dielectric loss in dielectric window 101 is large, the energy of ions from the plasma striking dielectric window 101 can be suppressed to a low level. Therefore, after plasma ignition, the consumption of dielectric window 101 can be suppressed by using the second high-frequency electric power RF2 to maintain the plasma.

[0049] Furthermore, in plasma processing apparatus 1, matching unit 34 matches the load impedance for one of the first and second frequencies, while impedance converter 36 matches the load impedance for the other frequency.

[0050] Below, refer to Figure 3 . Figure 3 This is a timing diagram of the first and second high-frequency electric powers in a plasma processing apparatus according to an exemplary embodiment. The first RF generator 31a can be configured to simultaneously generate the first and second high-frequency electric powers RF1 and RF2 after only the first high-frequency electric power RF1 is generated and before only the second high-frequency electric power RF2 is generated. In one embodiment, the first RF generator 31a is configured to simultaneously supply the first and second high-frequency electric powers RF1 and RF2 to the antenna 14 after only the first high-frequency electric power RF1 is supplied to the antenna 14 and before only the second high-frequency electric power RF2 is supplied to the antenna 14. After the period T1 during which only the first high-frequency electric power RF1 is supplied to the antenna 14 and before the period T2 during which only the second high-frequency electric power RF2 is supplied to the antenna 14, there can be a period T3 during which the first and second high-frequency electric powers RF1 and RF2 are simultaneously supplied to the antenna 14.

[0051] In another embodiment, the first RF generator 31a may supply both the first high-frequency electric power RF1 and the second high-frequency electric power RF2 to the antenna 14 during period T1. However, the power level of the second high-frequency electric power RF2 during period T1 is lower than the power level of the second high-frequency electric power RF2 during period T2. Furthermore, the first RF generator 31a may supply both the first high-frequency electric power RF1 and the second high-frequency electric power RF2 to the antenna 14 during period T2. However, the power level of the first high-frequency electric power RF1 during period T2 is lower than the power level of the first high-frequency electric power RF1 during period T1. Furthermore, during period T3 between periods T1 and T2, the first RF generator 31a may supply the antenna 14 with the first high-frequency electric power RF1 at a higher power level than during period T2. The power level of the first high-frequency electric power RF1 during period T3 may be the same as the power level of the first high-frequency electric power RF1 during period T1. Furthermore, the first RF generator 31a may supply the second high-frequency electric power RF2 having a higher power level than that in the period T1 to the antenna 14 during the period T3. The power level of the second high-frequency electric power RF2 in the period T3 may be the same as the power level of the second high-frequency electric power RF2 in the period T2.

[0052] Below, refer to Figure 4 . Figure 4 FIG. 1 is a diagram showing the configuration of a power supply system and a control system in a plasma processing apparatus according to another exemplary embodiment. Figure 4 The plasma processing apparatus 1A shown will be described from the perspective of the differences between the configurations of the power supply system and the control system of the plasma processing apparatus 1A and those of the plasma processing apparatus 1 .

[0053] The first RF generator 31a of the plasma processing apparatus 1A includes a plurality of high-frequency power supplies 301 and 302. The high-frequency power supply 301 (first high-frequency power supply) is configured to generate a first high-frequency electric power RF1. The high-frequency power supply 302 (second high-frequency power supply) is configured to generate a second high-frequency electric power RF2. The plasma processing apparatus 1A may not include the first filter 35, the impedance converter 36, and the second filter 37. The plasma processing apparatus 1A further includes a directional coupler 311, a sensor 331, a matching device 341, a directional coupler 312, a sensor 332, and a matching device 342.

[0054] The high frequency power supply 301 is electrically connected to the antenna 14 via the directional coupler 311, the sensor 331, and the matching device 341. The matching device 341 is configured to match the output impedance of the high frequency power supply 301 with the load impedance for the first frequency.

[0055] Directional coupler 311 measures the power level of the traveling wave of first high-frequency electric power RF1 and the power level of the reflected wave of first high-frequency electric power RF1. Directional coupler 311 can determine the reflection coefficient of first high-frequency electric power RF1. The reflection coefficient is determined by the power level of the traveling wave and the power level of the reflected wave. This reflection coefficient is communicated from directional coupler 311 to control unit 2. Directional coupler 311 can be integrated with high-frequency power supply 301.

[0056] Sensor 331 is, for example, a voltage and current sensor. Sensor 331 measures the voltage and current of first high-frequency power RF1 supplied to antenna 14. Sensor 331 can determine the reflection coefficient of first high-frequency power RF1 from the measured voltage and current. Sensor 331 can notify control unit 2 of the reflection coefficient.

[0057] The high frequency power supply 302 is electrically connected to the antenna 14 via the directional coupler 312, the sensor 332, and the matching device 342. The matching device 342 is configured to match the output impedance of the high frequency power supply 302 with the load impedance for the second frequency.

[0058] Directional coupler 312 measures the power level of the traveling wave of the second high-frequency electric power RF2 and the power level of the reflected wave of the second high-frequency electric power RF2. Directional coupler 312 can determine the reflection coefficient of the second high-frequency electric power RF2. The reflection coefficient is determined by the power level of the traveling wave and the power level of the reflected wave. This reflection coefficient is communicated from directional coupler 312 to control unit 2. Directional coupler 312 can be integrated with high-frequency power supply 302.

[0059] Sensor 332 is, for example, a voltage and current sensor. Sensor 332 measures the voltage and current of second high-frequency power RF2 supplied to antenna 14. Sensor 332 can determine the reflection coefficient of second high-frequency power RF2 from the measured voltage and current. Sensor 332 can notify control unit 2 of the reflection coefficient.

[0060] Below, refer to Figure 5 As shown in the figures, in the plasma processing apparatuses according to various exemplary embodiments, the antenna may be composed of a plurality of antennas.

[0061] Figure 5 (a) is a plan view of an antenna in an exemplary embodiment. Figure 5 (b) is a plan view of an antenna in another exemplary embodiment. Figure 5 (c) is a plan view of an antenna in another exemplary embodiment. Various exemplary embodiments of the plasma processing apparatus may include Figure 5 The antenna 14A shown in (a) Figure 5 Antenna 14B shown in (b) or Figure 5 Antenna 14C shown in (c) is used instead of antenna 14.

[0062] Antenna 14A, antenna 14B, and antenna 14C each include a first antenna 141 and a second antenna 142. First antenna 141 and second antenna 142 can each be formed from a coil wound around an axis extending in a vertical direction. First antenna 141 and second antenna 142 each have a circular shape when viewed from above. The central axis of second antenna 142 can be located on the central axis of chamber 10. First antenna 141 is smaller than second antenna 142.

[0063] In antenna 14A, first antenna 141 and second antenna 142 are arranged so as not to overlap each other in a plan view. In antenna 14A, the outer periphery of first antenna 141 and the outer periphery of second antenna 142 may be arranged so as to circumscribe each other in a plan view.

[0064] In the antenna 14B, the first antenna 141 and the second antenna 142 are arranged so as to overlap each other in a plan view. Figure 5 As shown in (b), the first antenna 141 and the second antenna 142 may share a central axis with each other.

[0065] In the antenna 14C, the first antenna 141 and the second antenna 142 are arranged so as to overlap each other when viewed from above. Figure 5 As shown in (c), the central axis of the first antenna 141 may be disposed at a position deviated from the central axis of the second antenna 142. The outer periphery of the first antenna 141 and the inner periphery of the second antenna 142 may be configured to be inscribed in a plan view.

[0066] In each of antenna 14A, antenna 14B, and antenna 14C, only the first high-frequency electric power RF1 of the first high-frequency electric power RF1 and the second high-frequency electric power RF2 may be supplied to first antenna 141. Only the second high-frequency electric power RF2 of the first high-frequency electric power RF1 and the second high-frequency electric power RF2 may be supplied to second antenna 142. In addition, the first high-frequency electric power RF1 and the second high-frequency electric power RF2 may be supplied to at least one of first antenna 141 and second antenna 142 simultaneously.

[0067] In one embodiment, the control unit 2 may be configured to determine a first frequency and use the first high frequency electric power RF1 having the determined first frequency to ignite the plasma. Figure 6 (a)~ Figure 6 (d) of FIG. 1 illustrates the process of the control unit 2 determining the first frequency.

[0068] Figure 6(a) is a diagram showing an example of a power spectrum of high frequency electric power having multiple frequency components. The first RF generating unit 31a can be configured to generate Figure 6 (a) shows high-frequency electric power with multiple frequency components. Figure 6 The high-frequency electric power shown in (a) has multiple frequency components Sa1 to San. n is an integer greater than or equal to 2. The power level of each of the multiple frequency components Sa1 to San is a predetermined power level P. The control unit 2 controls the first RF generator 31a to supply the high-frequency electric power having multiple frequency components to the antenna 14. In addition, in the plasma processing apparatus 1A, the high-frequency electric power having multiple frequency components can be generated by the high-frequency power supply 301.

[0069] Figure 6 (b) shows the Figure 6 (a) is a diagram showing an example of multiple measurement values of the coupling efficiency of multiple frequency components to the plasma. The control unit 2 uses the multiple measurement values to determine the first frequency. The multiple measurement values represent the coupling efficiency of each of the multiple frequency components Sa1 to San to the plasma. The multiple measurement values can be, for example, the reflection coefficients of each of the multiple frequency components Sa1 to San obtained by the directional coupler 310 or the sensor 33, or the directional coupler 311 or the sensor 331. Alternatively, the multiple measurement values can be the load power level of each of the multiple frequency components Sa1 to San obtained by the sensor 33 or the sensor 331. The load power level is the difference between the power level of the traveling wave of each of the multiple frequency components Sa1 to San and the power level of the reflected wave.

[0070] The control unit 2 uses the plurality of measured values to determine the frequency of the component having the maximum coupling efficiency among the plurality of frequency components Sa1 to San as the first frequency. Figure 6 In the example shown in (b), the frequency component having the highest coupling efficiency among the plurality of frequency components Sa1 to San is the frequency component Sa2.

[0071] In one embodiment, the control unit 2 can cause the first RF generator 31a to generate high-frequency electric power including multiple frequency components Sb1 to Sbm, and update the first frequency, wherein the multiple frequency components Sb1 to Sbm have a frequency pitch narrower than the frequency pitch of the multiple frequency components Sa1 to Sa1. The control unit 2 can be configured to use the first high-frequency electric power RF1 having the updated first frequency for plasma ignition. In the plasma processing apparatus 1A, the high-frequency electric power including multiple frequency components can be generated by the high-frequency power supply 301.

[0072] Figure 6 (c) is a diagram showing an example of a power spectrum of high-frequency electric power having a plurality of frequency components. Figure 6 The high-frequency electric power shown in (c) has multiple frequency components Sb1 to Sbm. m is an integer greater than or equal to 2. The power level of each of the multiple frequency components Sb1 to Sbm is a predetermined power level P. The frequency band containing the multiple frequency components Sb1 to Sbm is narrower than the frequency band containing the multiple frequency components Sa1 to San. The frequency band containing the multiple frequency components Sb1 to Sbm includes the frequency component with the maximum coupling efficiency among the multiple frequency components Sa1 to San (for example, frequency component Sa2). The frequency component Sa2 can be the center frequency of the frequency band containing the multiple frequency components Sb1 to Sbm.

[0073] Figure 6 (d) is a diagram showing Figure 6 (c) is a diagram showing an example of multiple measurement values of the coupling efficiency of multiple frequency components to the plasma. The control unit 2 uses the multiple measurement values to update the first frequency. The multiple measurement values represent the coupling efficiency of each of the multiple frequency components Sb1 to Sbn to the plasma. The multiple measurement values can be, for example, the reflection coefficients of each of the multiple frequency components Sb1 to Sbn obtained by the directional coupler 310 or the sensor 33, or the directional coupler 311 or the sensor 331. Alternatively, the multiple measurement values can be the load power levels of each of the multiple frequency components Sb1 to Sbn obtained by the sensor 33 or the sensor 331. The load power level is the difference between the power level of the traveling wave and the power level of the reflected wave of each of the multiple frequency components Sb1 to Sbn.

[0074] The control unit 2 uses the plurality of measurement values to determine the frequency of the component having the maximum coupling efficiency among the plurality of frequency components Sb1 to Sbn, and uses the determined frequency to update the first frequency. Figure 6 In the example shown in (d), the frequency component having the highest coupling efficiency among the plurality of frequency components Sb1 to Sbm is the frequency component Sb4.

[0075] In one embodiment, the control unit 2 can use the second high frequency electric power RF2 containing multiple frequency components to maintain the plasma after the plasma is ignited, and can also perform load power control of the multiple frequency components of the second high frequency electric power RF2. Figure 7 (a)~ Figure 7 (c) of the flowchart illustrates a process in which the control unit 2 performs load power control on a plurality of frequency components of the second high-frequency electric power RF2.

[0076] Figure 7 (a) is a diagram showing an example of a power spectrum of the second high frequency electric power having multiple frequency components. The first RF generating unit 31a can be configured to generate the following after the plasma is ignited: Figure 7 (a) shows the second high-frequency electric power having multiple frequency components. Figure 7 The second high-frequency electric power shown in (a) has multiple frequency components S1 to Sn. n is an integer greater than or equal to 2. The power level of each of the multiple frequency components S1 to Sn is a predetermined power level P. The control unit 2 controls the first RF generator 31a to supply the second high-frequency electric power having multiple frequency components to the antenna 14. Furthermore, in the plasma processing apparatus 1A, the second high-frequency electric power having multiple frequency components can be generated by the high-frequency power supply 302.

[0077] Figure 7 (b) is shown to represent the Figure 7 Graph showing an example of multiple measurement values of the coupling efficiency to the plasma corresponding to the multiple frequency components of (a). The control unit 2 uses the multiple measurement values to perform load power control of the multiple frequency components of the second high-frequency electric power RF2. The multiple measurement values represent the coupling efficiency of each of the multiple frequency components S1 to Sn to the plasma. The multiple measurement values can be, for example, the reflection coefficients of each of the multiple frequency components S1 to Sn obtained by the directional coupler 310 or the sensor 33, or the directional coupler 312 or the sensor 332. Alternatively, the multiple measurement values can be the load power levels of each of the multiple frequency components S1 to Sn obtained by the sensor 33 or the sensor 332. The load power level is the difference between the power level of the traveling wave and the power level of the reflected wave of each of the multiple frequency components S1 to Sn.

[0078] Figure 7 (c) is a diagram showing an example of a power spectrum of a second high frequency electric power having a plurality of frequency components. The control unit 2 uses a plurality of measurement values, such as Figure 7 As shown in (c) of FIG. 1 , the power level of each of the multiple frequency components of the second high-frequency electric power RF2 is adjusted so that the load power levels of the multiple frequency components of the second high-frequency electric power RF2 approach the respective specified levels. In one example, the control unit 2 can adjust the power level of each of the multiple frequency components of the second high-frequency electric power RF2 so that the load power levels of the multiple frequency components of the second high-frequency electric power RF2 are approximately the same.

[0079] Below, refer to Figure 8 , an example of a plasma treatment method is described. Figure 8 is a flow chart of a plasma processing method according to an exemplary embodiment. Figure 8 The plasma processing method (hereinafter referred to as "method MT") shown can be performed using the plasma processing apparatus 1 or 1 A. Hereinafter, the method MT performed using the plasma processing apparatus 1 will be described as one embodiment.

[0080] Method MT includes steps STa and STb. In step STa, first high-frequency electric power RF1 is supplied from the first RF generator 31a to the antenna 14. In one embodiment, in step STa, the first high-frequency electric power RF1 may be supplied from the first RF generator 31a to the antenna 14 to ignite plasma in the chamber 10 of the plasma processing apparatus 1. In step STb, second high-frequency electric power RF2 is supplied from the first RF generator 31a to the antenna 14. In one embodiment, in step STb, the second high-frequency electric power RF2 may be supplied from the first RF generator 31a to the antenna 14 to maintain the ignited plasma in the chamber 10.

[0081] In one embodiment, when method MT is performed using plasma processing apparatus 1 , first high-frequency electric power RF1 may be supplied from high-frequency power supply 300 in step STa. Second high-frequency electric power RF2 may be supplied from high-frequency power supply 300 in step STb.

[0082] In one embodiment, when method MT is performed using plasma processing apparatus 1 , high-frequency electric power selectively passing through first filter 35 may be supplied in step STa. High-frequency electric power selectively passing through second filter 37 may be supplied in step STb.

[0083] In one embodiment, when method MT is performed using plasma processing apparatus 1A, first high-frequency electric power RF1 may be supplied from high-frequency power supply 301 in step STa, and second high-frequency electric power RF2 may be supplied from high-frequency power supply 302 in step STb.

[0084] In one embodiment, when method MT is performed using a plasma processing apparatus including any of antennas 14A, 14B, and 14C, first high-frequency power RF1 may be supplied to first antenna 141 in step STa, and second high-frequency power RF2 may be supplied to second antenna 142 in step STb.

[0085] In one embodiment, method MT may comprise a step STc. Figure 8 In the example shown in FIG, step STc is performed after step STa and before step STb. In this case, in step STa, only the first high-frequency electric power RF1 is supplied from the first RF generator 31a to the antenna 14. In step STc, both the first high-frequency electric power RF1 and the second high-frequency electric power RF2 are supplied from the first RF generator 31a to the antenna 14. In step STb, only the second high-frequency electric power RF2 is supplied from the first RF generator 31a to the antenna 14.

[0086] In one embodiment, method MT may comprise steps STd and STe. Figure 8 In the example, step STd and step STe are performed before step STa. In step STd, high frequency electric power having a plurality of frequency components Sa1 to San is supplied to the antenna 14 (see Figure 6 (a)).

[0087] In step STe, the frequency of the component having the maximum coupling efficiency among the plurality of frequency components Sa1 to San supplied to the antenna 14 is determined as the first frequency. The first frequency is based on a plurality of measured values representing the plasma coupling efficiency of each of the plurality of frequency components Sa1 to San (see Figure 6 The multiple measurement values may be, for example, the reflection coefficients of the multiple frequency components Sa1 to San obtained by the directional coupler 310 or the sensor 33, or the directional coupler 311 or the sensor 331. Alternatively, the multiple measurement values may be the load power levels of the multiple frequency components Sa1 to San obtained by the sensor 33 or the sensor 331. The load power level is the difference between the power level of the traveling wave and the power level of the reflected wave of the multiple frequency components Sa1 to San. In step STa, the first high-frequency electric power RF1 having the first frequency determined in step STe may be supplied.

[0088] In one embodiment, step STd and step STe may be performed again. In this case, in the repeated step STd, high-frequency electric power including a plurality of frequency components Sb1 to Sbm may be supplied to the antenna 14 (see Figure 6 (c)), the frequency components Sb1 to Sbm have a frequency interval narrower than the frequency interval of the frequency components Sa1 to San. In step STe performed again, the frequency of the component with the maximum coupling efficiency among the frequency components Sb1 to Sbm supplied to the antenna 14 can be updated to the first frequency. The first frequency is based on a plurality of measured values representing the plasma coupling efficiency of each of the frequency components Sb1 to Sbm (see Figure 6 In step STa, the first high-frequency electric power RF1 having the first frequency updated in step STe performed again may be supplied.

[0089] Although various exemplary embodiments have been described above, the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0090] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E16].

[0091] [E1]

[0092] A plasma processing apparatus comprising:

[0093] a chamber including a dielectric window;

[0094] a substrate support portion disposed within the chamber;

[0095] at least one antenna disposed outside the chamber, the dielectric window being disposed between the substrate support and the at least one antenna;

[0096] a gas supply unit configured to supply gas into the chamber; and

[0097] an RF generating unit electrically connected to the at least one antenna,

[0098] The RF generator is configured to generate first high-frequency electric power having a first frequency and second high-frequency electric power having a second frequency.

[0099] The dielectric loss of the dielectric window for the second frequency is greater than the dielectric loss of the dielectric window for the first frequency.

[0100] [E2]

[0101] The plasma processing apparatus according to [E1], wherein

[0102] The RF generation unit is composed of:

[0103] generating the first high frequency electric power to ignite plasma in the chamber,

[0104] The second high-frequency electric power is generated to maintain the ignited plasma in the chamber.

[0105] [E3]

[0106] The plasma processing apparatus according to [E1] or [E2], wherein:

[0107] The RF generation unit is composed of a single high-frequency power supply.

[0108] [E4]

[0109] The plasma processing apparatus according to any one of [E1] to [E3], further comprising:

[0110] a matching device connected between the RF generating unit and the at least one antenna;

[0111] a first filter connected between the matching device and the at least one antenna, configured to selectively pass the first high-frequency electric power;

[0112] a second filter connected between the matching device and the at least one antenna, configured to selectively pass the second high-frequency electric power; and

[0113] an impedance converter connected between one of the first filter and the second filter and the at least one antenna,

[0114] The matching device is configured to match the load impedance of the frequency of the high-frequency electric power selectively passing through the other of the first filter and the second filter with the output impedance of the RF generation unit.

[0115] The impedance converter is configured to match a load impedance with respect to a frequency of high-frequency electric power selectively passing through the one filter with an output impedance of the RF generation unit.

[0116] [E5]

[0117] The plasma processing apparatus according to [E1] or [E2], wherein:

[0118] The RF generation unit includes:

[0119] a first high-frequency power supply configured to generate the first high-frequency electric power; and

[0120] A second high-frequency power supply is configured to generate the second high-frequency electric power.

[0121] [E6]

[0122] The plasma processing apparatus according to any one of [E1] to [E5], wherein

[0123] The at least one antenna comprises:

[0124] a first antenna receiving the first high-frequency electric power; and

[0125] A second antenna receives the second high-frequency electric power.

[0126] [E7]

[0127] The plasma processing apparatus according to any one of [E1] to [E6], wherein

[0128] The RF generator is configured to simultaneously supply the first and second high-frequency electric powers to the at least one antenna after supplying only the first high-frequency electric power to the at least one antenna and before supplying only the second high-frequency electric power to the at least one antenna.

[0129] [E8]

[0130] The plasma processing apparatus according to any one of [E1] to [E7], wherein

[0131] Also includes a control unit,

[0132] The control unit is composed of:

[0133] controlling the RF generation unit to supply high-frequency electric power having a plurality of frequency components to the at least one antenna,

[0134] The frequency of a component having the maximum coupling efficiency among the plurality of frequency components is determined as the first frequency based on a plurality of measurement values indicating coupling efficiency of each of the plurality of frequency components to plasma acquired by a sensor.

[0135] [E9]

[0136] A plasma treatment method comprising:

[0137] (a) In a plasma processing apparatus, a step of supplying first high-frequency electric power having a first frequency from an RF generating unit to at least one antenna, the plasma processing apparatus comprising:

[0138] said chamber comprising a dielectric window;

[0139] a substrate support portion disposed within the chamber;

[0140] The at least one antenna is disposed outside the chamber, the dielectric window being disposed between the substrate support and the at least one antenna; and

[0141] The RF generating section electrically connected to the at least one antenna; and

[0142] (b) supplying second high-frequency electric power having a second frequency from the RF generation unit to the at least one antenna,

[0143] The dielectric loss of the dielectric window for the second frequency is greater than the dielectric loss of the dielectric window for the first frequency.

[0144] [E10]

[0145] The plasma treatment method according to [E9], wherein

[0146] In (a), the first high-frequency electric power is supplied from the RF generator to the at least one antenna to ignite plasma in the chamber.

[0147] In the above (b), the second high-frequency electric power is supplied from the RF generation unit to the at least one antenna to maintain the ignited plasma in the chamber.

[0148] [E11]

[0149] The plasma treatment method according to [E9] or [E10], wherein

[0150] The RF generation unit is composed of a single high-frequency power supply.

[0151] In (a), the first high-frequency electric power is supplied from the single high-frequency power supply.

[0152] In (b), the second high-frequency electric power is supplied from the single high-frequency power supply.

[0153] [E12]

[0154] The plasma treatment method according to any one of [E9] to [E11], wherein

[0155] The plasma processing device further comprises:

[0156] a matching device connected between the RF generating unit and the at least one antenna;

[0157] a first filter connected between the matching device and the at least one antenna, configured to selectively pass the first high-frequency electric power;

[0158] a second filter connected between the matching device and the at least one antenna, configured to selectively pass the second high-frequency electric power; and

[0159] an impedance converter connected between one of the first filter and the second filter and the at least one antenna,

[0160] The matching device is configured to match the load impedance of the frequency of the high-frequency electric power selectively passing through the other of the first filter and the second filter with the output impedance of the RF generation unit.

[0161] The impedance converter is configured to match the load impedance of the high-frequency electric power selectively passing through the one filter with the output impedance of the RF generation unit.

[0162] In the above (a), the high-frequency electric power is supplied after selectively passing through the first filter.

[0163] In the above (b), the high-frequency electric power selectively passed through the second filter is supplied.

[0164] [E13]

[0165] The plasma treatment method according to [E9] or [E10], wherein

[0166] The RF generation unit includes:

[0167] a first high-frequency power supply configured to generate the first high-frequency electric power; and

[0168] a second high-frequency power supply configured to generate the second high-frequency electric power,

[0169] In the above (a), the first high-frequency electric power is supplied from the first high-frequency power supply,

[0170] In the above (b), the second high-frequency electric power is supplied from the second high-frequency power supply.

[0171] [E14]

[0172] The plasma treatment method according to any one of [E9] to [E13], wherein

[0173] The at least one antenna comprises:

[0174] a first antenna receiving the first high-frequency electric power; and

[0175] a second antenna receiving the second high-frequency electric power,

[0176] In the above (a), the first high-frequency electric power is supplied to the first antenna,

[0177] In the above (b), the second high-frequency electric power is supplied to the second antenna.

[0178] [E15]

[0179] The plasma treatment method according to any one of [E9] to [E14], comprising:

[0180] (c) A step of simultaneously supplying the first high-frequency electric power and the second high-frequency electric power to the at least one antenna after the RF generating unit supplies only the first high-frequency electric power to the at least one antenna in (a) and before the RF generating unit supplies only the second high-frequency electric power to the at least one antenna in (b).

[0181] [E16]

[0182] The plasma treatment method according to any one of [E9] to [E15], further comprising:

[0183] (d) a step of supplying high-frequency electric power having a plurality of frequency components to the at least one antenna; and

[0184] (e) determining, as the first frequency, a frequency of a component having the maximum coupling efficiency among the plurality of frequency components based on a plurality of measurement values indicating the coupling efficiency of each of the plurality of frequency components to the plasma acquired by a sensor,

[0185] In (a), the first high-frequency electric power having the first frequency determined in (e) is supplied to the at least one antenna.

[0186] It will be understood from the foregoing description that the various embodiments of the present invention are described in this specification for illustrative purposes and that various modifications may be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the scope of the invention.

[0187] Attachment Marking Instructions

[0188] 1, 1A...Plasma processing apparatus, 2...Control unit, 10...Chamber, 11...Substrate support unit, 14, 14A, 14B, 14C...Antenna, 20...Gas supply unit, 31a...First RF generation unit, 33, 331, 332...Sensor, 34, 341, 342...Matching device, 35...First filter, 36...Impedance converter, 37...Second filter, 101...Dielectric window, 300, 301, 302...High-frequency power supply, 310, 311, 312...Directional coupler, RF1...First high-frequency electric power, RF2...Second high-frequency electric power.

Claims

1. A plasma processing device, characterized in that include: a chamber including a dielectric window; a substrate support portion disposed within the chamber; at least one antenna disposed outside the chamber, the dielectric window being disposed between the substrate support and the at least one antenna; a gas supply portion configured to supply gas into the chamber; and an RF generating unit electrically connected to the at least one antenna, The RF generator is configured to generate first high-frequency electric power having a first frequency and second high-frequency electric power having a second frequency. A dielectric loss of the dielectric window for the second frequency is greater than a dielectric loss of the dielectric window for the first frequency.

2. The plasma processing apparatus according to claim 1, wherein: The RF generation unit is composed of: generating the first high frequency electric power to ignite plasma in the chamber, The second high-frequency electric power is generated to maintain the ignited plasma in the chamber.

3. The plasma processing apparatus according to claim 1 or 2, wherein: The RF generation unit is composed of a single high-frequency power supply.

4. The plasma processing apparatus according to claim 1 or 2, wherein: Also includes: a matching device connected between the RF generating unit and the at least one antenna; a first filter connected between the matching device and the at least one antenna, configured to selectively pass the first high-frequency electric power; a second filter connected between the matching device and the at least one antenna, configured to selectively pass the second high-frequency electric power; and an impedance converter connected between one of the first filter and the second filter and the at least one antenna, The matching device is configured to match the load impedance of the frequency of the high-frequency electric power selectively passing through the other of the first filter and the second filter with the output impedance of the RF generation unit. The impedance converter is configured to match a load impedance with respect to a frequency of high-frequency electric power selectively passing through the one filter with an output impedance of the RF generation unit.

5. The plasma processing apparatus according to claim 1, wherein: The RF generating unit includes: a first high-frequency power supply configured to generate the first high-frequency electric power; and A second high-frequency power supply is configured to generate the second high-frequency electric power.

6. The plasma processing apparatus according to claim 1 or 2, wherein: The at least one antenna comprises: a first antenna receiving the first high-frequency electric power; and A second antenna receives the second high-frequency electric power.

7. The plasma processing apparatus according to claim 1 or 2, wherein: The RF generator is configured to simultaneously supply the first and second high-frequency electric powers to the at least one antenna after supplying only the first high-frequency electric power to the at least one antenna and before supplying only the second high-frequency electric power to the at least one antenna.

8. The plasma processing apparatus according to claim 1 or 2, wherein: Also includes a control unit, The control unit is composed of: controlling the RF generation unit to supply high-frequency electric power having a plurality of frequency components to the at least one antenna, The frequency of a component having the maximum coupling efficiency among the plurality of frequency components is determined as the first frequency based on a plurality of measurement values indicating coupling efficiency of each of the plurality of frequency components to plasma acquired by a sensor.

9. A plasma treatment method, characterized in that: include: (a) In a plasma processing apparatus, a step of supplying first high-frequency electric power having a first frequency from an RF generation unit to at least one antenna, the plasma processing apparatus comprising: said chamber comprising a dielectric window; a substrate support portion disposed within the chamber; The at least one antenna is disposed outside the chamber, the dielectric window being disposed between the substrate support and the at least one antenna; and The RF generating section electrically connected to the at least one antenna; and (b) supplying second high-frequency electric power having a second frequency from the RF generation unit to the at least one antenna, A dielectric loss of the dielectric window for the second frequency is greater than a dielectric loss of the dielectric window for the first frequency.

10. The plasma processing method according to claim 9, wherein: In (a), the first high-frequency electric power is supplied from the RF generator to the at least one antenna to ignite plasma in the chamber. In the above (b), the second high-frequency electric power is supplied from the RF generation unit to the at least one antenna to maintain the ignited plasma in the chamber.

11. The plasma treatment method according to claim 9 or 10, characterized in that: The RF generation unit is composed of a single high-frequency power supply. In (a), the first high-frequency electric power is supplied from the single high-frequency power supply. In (b), the second high-frequency electric power is supplied from the single high-frequency power supply.

12. The plasma treatment method according to claim 9 or 10, characterized in that: The plasma processing device further comprises: a matching device connected between the RF generating unit and the at least one antenna; a first filter connected between the matching device and the at least one antenna, configured to selectively pass the first high-frequency electric power; a second filter connected between the matching device and the at least one antenna, configured to selectively pass the second high-frequency electric power; and an impedance converter connected between one of the first filter and the second filter and the at least one antenna, The matching device is configured to match the load impedance of the frequency of the high-frequency electric power selectively passing through the other of the first filter and the second filter with the output impedance of the RF generation unit. The impedance converter is configured to match the load impedance of the high-frequency electric power selectively passing through the one filter with the output impedance of the RF generation unit. In the above (a), the high-frequency electric power is supplied after selectively passing through the first filter. In the above (b), the high-frequency electric power selectively passed through the second filter is supplied.

13. The plasma treatment method according to claim 9 or 10, characterized in that: The RF generating unit includes: a first high-frequency power supply configured to generate the first high-frequency electric power; and a second high-frequency power supply configured to generate the second high-frequency electric power, In the above (a), the first high-frequency electric power is supplied from the first high-frequency power supply, In the above (b), the second high-frequency electric power is supplied from the second high-frequency power supply.

14. The plasma processing method according to claim 9 or 10, characterized in that: The at least one antenna comprises: a first antenna receiving the first high-frequency electric power; and a second antenna receiving the second high-frequency electric power, In the above (a), the first high-frequency electric power is supplied to the first antenna, In the above (b), the second high-frequency electric power is supplied to the second antenna.

15. The plasma treatment method according to claim 9 or 10, characterized in that: include: (c) A step of simultaneously supplying the first high-frequency electric power and the second high-frequency electric power to the at least one antenna after the RF generating unit supplies only the first high-frequency electric power to the at least one antenna in (a) and before the RF generating unit supplies only the second high-frequency electric power to the at least one antenna in (b).

16. The plasma treatment method according to claim 9 or 10, characterized in that: Also includes: (d) a step of supplying high-frequency electric power having a plurality of frequency components to the at least one antenna; and (e) determining, as the first frequency, a frequency of a component having the maximum coupling efficiency among the plurality of frequency components based on a plurality of measurement values indicating the coupling efficiency of each of the plurality of frequency components to the plasma obtained by a sensor, In (a), the first high-frequency electric power having the first frequency determined in (e) is supplied to the at least one antenna.

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