Through hole seed layer preparation method and seed layer substrate

Abstract

The invention is suitable for the technical field of microelectronic packaging, and provides a through hole seed layer preparation method and a seed layer substrate, and the through hole seed layer preparation method comprises the steps: forming a through hole in a substrate; depositing a metal layer on the inner wall of the through hole, wherein the metal layer comprises a first sub-layer deposited by adopting a first deposition process; the metal layer is thermally treated to form a seed layer. The seed layer substrate comprises a substrate and a seed layer; the substrate is provided with a through hole, the inner wall of the through hole is provided with a seed layer, and the seed layer is prepared by adopting the through hole seed layer preparation method. The metal layer is formed on the inner wall of the through hole by using the deposition process, and the first sub-layer of the metal layer is deposited by using the first deposition process, so that after the metal layer is formed on the inner wall of the through hole by using the deposition method, the metal layer is subjected to heat treatment operation, and the adhesion strength between the metal layer and the inner wall of the through hole can be enhanced; and the seed layer is formed, so that the effective conductive function is ensured by the seed layer, and the product yield is improved.

Description

Technical Field

[0001] The present application relates to the field of microelectronic packaging technology, and more specifically, to a method for preparing a through-hole seed layer and a seed layer substrate. Background Art

[0002] Glass substrates have gradually attracted attention in the field of semiconductor packaging, and have become an ideal choice for high-precision packaging applications such as chips, sensors, and micro-electromechanical systems (MEMS). At the same time, through-glass via (TGV) technology has become an important technical path to achieve high-density interconnection and three-dimensional integration due to its low dielectric constant, high insulation and relatively low manufacturing cost. The TGV process forms a through hole in a glass substrate and forms a conductive material on the inner wall of the through hole to achieve electrical connection of a multi-layer structure, and is widely used in the field of advanced packaging. However, the current seed layer used for conductivity on the inner wall of the through-glass via has poor adhesion to the inner wall, and there is a possibility of failure of the conductive function of the through-glass via, thereby reducing the reliability and consistency of the TGV structure, making it difficult for the product yield to meet expectations, and limiting its wide application in high-performance microelectronic packaging, radio frequency devices and MEMS manufacturing.

[0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to ordinary technicians in this field. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a method for preparing a through-hole seed layer and a seed layer substrate, aiming to solve the technical problem in the related art of poor adhesion of the seed layer to the inner wall of the glass through-hole.

[0005] To achieve the above-mentioned purpose, the technical solution adopted in this application is to provide a device comprising:

[0006] A first aspect of the present application provides a method for preparing a through-hole seed layer, comprising:

[0007] forming a through hole in the substrate;

[0008] Depositing a metal layer on an inner wall of the through hole, wherein the metal layer includes a first sublayer deposited by a first deposition process;

[0009] The metal layer is heat-treated to form a seed layer.

[0010] In one possible design, the first deposition process is a physical vapor deposition process;

[0011] The first sub-layer is made of titanium or copper.

[0012] In a possible design, the metal layer further includes a second sublayer, and the second sublayer is deposited on the first sublayer using a second deposition process.

[0013] In one possible design, the first deposition process is a physical vapor deposition process, the material of the first sub-layer is titanium, the second deposition process is a liquid phase deposition process, and the material of the second sub-layer is copper;

[0014] Alternatively, the first deposition process is a physical vapor deposition process, the material of the first sub-layer is copper, the second deposition process is a liquid phase deposition process, and the material of the second sub-layer is copper;

[0015] Alternatively, the first deposition process is a physical vapor deposition process, and the material of the first sub-layer is titanium; the second deposition process is a physical vapor deposition process, and the material of the second sub-layer is copper.

[0016] In a possible design, the metal layer further includes a third sublayer, and the third sublayer is deposited on the second sublayer using a third deposition process.

[0017] In a possible design, the third deposition process is a liquid phase deposition process, and the material of the third sub-layer is copper.

[0018] In a possible design, the physical vapor deposition process is a magnetron sputtering process.

[0019] In one possible design, the liquid phase deposition process is a chemical deposition process; or, the liquid phase deposition process is an electroplating deposition process.

[0020] In a possible design, the heat treatment is a sintering process; and the substrate is made of glass.

[0021] The second aspect of the present application provides a seed layer substrate, which includes a substrate and a seed layer; the substrate has a through hole, the inner wall of the through hole is provided with the seed layer, and the seed layer is prepared using the through hole seed layer preparation method in any of the above embodiments.

[0022] The beneficial effects of the through-hole seed layer preparation method and seed layer substrate provided in this application are mainly:

[0023] The present application utilizes a deposition process to form a metal layer on the inner wall of the through hole, wherein the first sublayer of the metal layer is deposited using a first deposition process. In this way, the metal layer is first formed on the inner wall of the through hole by a deposition method, and then the metal layer is heat treated. This can enhance the adhesion strength between the metal layer and the inner wall of the through hole and form a seed layer. Such a seed layer ensures effective conductive function, which in turn helps to improve product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0025] Figure 1 1 is a schematic flow chart of a method for preparing a through-hole seed layer provided in an embodiment of the present application;

[0026] Figure 2 1 is a schematic flow chart of another method for preparing a through-hole seed layer provided in an embodiment of the present application;

[0027] Figure 3 1 is a flow chart of another method for preparing a through-hole seed layer provided in an embodiment of the present application;

[0028] Figure 4 This is a schematic structural diagram of a substrate in an embodiment of the present application;

[0029] Figure 5 is a schematic structural diagram of a through hole on a substrate in an embodiment of the present application;

[0030] Figure 6 This is a schematic structural diagram of a seed layer substrate in an embodiment of the present application;

[0031] Figure 7 Schematic diagram of the structure in which a metal layer is formed on the inner wall of a through hole in an embodiment of the present application;

[0032] Figure 8 2 is a schematic structural diagram of another embodiment of the present application in which a metal layer is formed on the inner wall of a through hole;

[0033] Figure 9 It is a schematic structural diagram of another embodiment of the present application in which a metal layer is formed on the inner wall of a through hole.

[0034] Description of main reference numerals:

[0035] 400, substrate; 401, through hole; 402, seed layer; 403, metal layer; 404, first sublayer; 405, second sublayer; 406, third sublayer. DETAILED DESCRIPTION

[0036] In order to make the technical problems, technical solutions and beneficial effects to be solved by this application more clearly understood, this application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0037] It should be noted that when an element is referred to as being “fixed on” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.

[0038] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0039] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0040] In order to illustrate the technical solution described in this application, the following is a detailed description with reference to specific drawings and embodiments.

[0041] Glass substrates have gradually attracted attention in the field of semiconductor packaging, and have become an ideal choice for high-precision packaging applications such as chips, sensors, and microelectromechanical systems (MEMS). At the same time, through-glass via (TGV) technology has become an important technical path for achieving high-density interconnection and three-dimensional integration due to its low dielectric constant, high insulation, and relatively low manufacturing cost. The TGV process forms a through hole in a glass substrate and arranges a conductive material on the inner wall of the through hole to achieve electrical connection of a multi-layer structure, and is widely used in the field of advanced packaging. In the TGV process, the seed layer on the inner wall of the through hole can provide a uniform and reliable conductive substrate to ensure the electrical connectivity and mechanical stability of the through hole.

[0042] In one embodiment, the seed layer on the inner wall of the through hole is deposited on the inner wall of the glass through hole in sequence using a magnetron sputtering deposition process to form a titanium layer and a copper layer, and the titanium layer and the copper layer together form a seed layer; however, the seed layer formed by the magnetron sputtering deposition process has poor adhesion to the inner wall. In another embodiment, the seed layer on the inner wall of the through hole is deposited on the inner wall of the glass through hole using a chemical deposition process to form a copper layer, and the copper layer is the seed layer; compared with the seed layer formed by the magnetron sputtering deposition process, the seed layer formed by the chemical deposition process has poor adhesion to the inner wall. Therefore, regardless of whether it is a seed layer formed by a magnetron sputtering deposition process or a seed layer formed by a chemical deposition process, due to the poor adhesion of the seed layers formed by the two, the possibility of failure of the conductive function of the through hole is likely to occur, thereby reducing the reliability and consistency of the TGV structure, making it difficult for the product yield to meet expectations, and limiting its wide application in high-performance microelectronic packaging, radio frequency devices and MEMS manufacturing.

[0043] To this end, an embodiment of the present application provides a through-hole seed layer preparation method and a seed layer substrate to solve the problem of poor adhesion of the seed layer 402; the through-hole seed layer preparation method and the seed layer substrate in the embodiment of the present application are described in detail below.

[0044] In one or more embodiments, the present application provides a method for preparing a through-hole seed layer, which is used to form a seed layer 402 on the inner wall of a through-hole 401 .

[0045] Combine Figure 1 、 Figure 4 、 Figure 5 、 Figure 6 and Figure 7 As shown, the preparation method comprises:

[0046] Step S100 : forming a through hole 401 on a substrate 400 .

[0047] Step S200 : depositing a metal layer 403 on the inner wall of the through hole 401 , wherein the metal layer 403 includes a first sublayer 404 deposited by a first deposition process.

[0048] Step S300 : performing heat treatment on the metal layer 403 to form a seed layer 402 .

[0049] The method for preparing a through-hole seed layer in an embodiment of the present application utilizes a deposition process to form a metal layer 403 on the inner wall of the through-hole 401, wherein the first sublayer 404 of the metal layer 403 is deposited using a first deposition process. In this way, the metal layer 403 is first formed on the inner wall of the through-hole 401 by a deposition method, and then the metal layer 403 is heat-treated. This can enhance the adhesion strength between the metal layer 403 and the inner wall of the through-hole 401 and form a seed layer 402. Such a seed layer 402 ensures effective conductive function, which is beneficial to improving product yield.

[0050] In some embodiments, in step S100, the material of the substrate 400 may be glass. Since the size of glass changes little during high-temperature manufacturing and operation, thermal stress and deformation are effectively reduced, which is beneficial to improving the reliability of the packaging structure.

[0051] In some embodiments, the method for forming the through-holes 401 on the substrate 400 can be sandblasting, photosensitive glass etching, focused discharge etching, plasma etching, laser ablation, electrochemical etching, or laser-induced etching. Exemplarily, the method for forming the through-holes 401 on the substrate 400 is laser induced etching, which facilitates rapid hole formation and saves time in processing the through-holes 401. Furthermore, the laser induced etching method can produce high-density, high-aspect-ratio through-holes 401 with minimal damage to the through-holes 401. The aspect ratio is the ratio of the depth of the through-hole 401 to its diameter, and a ratio of 5:1 or greater can be considered a high aspect ratio. It should be noted that in some other possible embodiments, the through-holes 401 can also be produced using a CO2 laser, a femtosecond laser, or an ultraviolet laser.

[0052] In some embodiments, the number of through holes 401 formed on the substrate 400 can be multiple, and the multiple through holes 401 can be arranged in an array, such as a row and column arrangement or other forms of array arrangement. The number of through holes 401 can be designed according to needs and is not specifically limited in this application.

[0053] In some embodiments, the thickness of the glass substrate 400 may be 50 μm to 500 μm. For example, the thickness of the glass substrate 400 may be 50 μm, 100 μm, 200 μm, 250 μm, 300 μm, 400 μm, or 500 μm. The specific thickness may be determined based on actual conditions and is not specifically limited in this application. The diameter of the through hole 401 may be 10 μm to 60 μm. For example, the diameter of the through hole 401 may be 10 μm, 20 μm, 30 μm, 35 μm, 40 μm, 50 μm, or 60 μm. The specific thickness may be determined based on actual conditions and is not specifically limited in this application.

[0054] In some embodiments, in step S200, the metal layer 403 formed on the inner wall of the through hole 401 does not fill the through hole 401. That is, after the metal layer 403 is formed on the inner wall of the through hole 401, the through hole 401 still penetrates the two opposite surfaces of the substrate 400. The metal layer 403 is in the form of a layer structure, which can be a multi-layer structure or a single-layer structure.

[0055] In some embodiments, in step S200, the first deposition process is a physical vapor deposition process; the material of the first sub-layer 404 is titanium or copper. Using the physical vapor deposition process, when the material of the first sub-layer 404 is titanium, the titanium first sub-layer 404 thus formed can have good adhesion to the inner wall of the through-hole 401. Using the physical vapor deposition process, when the material of the first sub-layer 404 is copper, good conductivity of the through-hole 401 can be achieved. Exemplarily, the physical vapor deposition process is a magnetron sputtering process, and thus the first deposition process is a magnetron sputtering process, which can ensure the adhesion between the first sub-layer 404 and the inner wall of the through-hole 401.

[0056] It should be noted that the first sub-layer 404 is in direct contact with the inner wall of the through hole 401 ; in some other possible implementations, the physical vapor deposition process may also be an evaporation deposition process or an ion beam sputtering process.

[0057] Combine Figure 2 、 Figure 4 、 Figure 5 and Figure 8 As shown, in some other embodiments, in step S200, the metal layer 403 further includes a second sub-layer 405, and the second sub-layer 405 is deposited on the first sub-layer 404 using a second deposition process; after the first sub-layer 404 is formed using the first deposition process, the second sub-layer 405 is deposited on the first sub-layer 404 using the second deposition process, so that the metal layer 403 formed in this way has a multi-layer structure; and the method of depositing the metal layer 403 on the inner wall of the through hole 401 includes:

[0058] Step S201 , using a first deposition process to deposit a first sub-layer 404 on the inner wall of the through hole 401 ;

[0059] Step S202 : Using a second deposition process to deposit a second sub-layer 405 on the first sub-layer 404 , so that in the radial direction of the through hole 401 , the first sub-layer 404 is located between the second sub-layer 405 and the inner wall of the through hole 401 .

[0060] See also Figure 8As shown, in one embodiment, when the metal layer 403 is a multi-layer structure, that is, when the metal layer 403 includes a first sub-layer 404 and a second sub-layer 405, the first deposition process is a physical vapor deposition process, and the material of the first sub-layer 404 is titanium. The second deposition process is a liquid phase deposition process, and the material of the second sub-layer 405 is copper. In this way, the first sub-layer 404 of titanium formed by the physical vapor deposition process has good adhesion to the inner wall of the through-hole 401. In addition, since copper and titanium are both metals, the second sub-layer 405 of copper can have good adhesion to the first sub-layer 404 of titanium. In this way, the second sub-layer 405 of copper can improve the conductivity of the metallized through-hole 401. Exemplarily, the physical vapor deposition process is a magnetron sputtering process; the liquid phase deposition process is a chemical deposition process or an electroplating deposition process, so the first deposition process is a magnetron sputtering process; and the second deposition process is a chemical deposition process or an electroplating deposition process.

[0061] See also Figure 8 As shown, in another embodiment, when the metal layer 403 is a multi-layer structure, that is, when the metal layer 403 includes a first sub-layer 404 and a second sub-layer 405, the first deposition process is a physical vapor deposition process, and the material of the first sub-layer 404 is copper. The second deposition process is a liquid phase deposition process, and the material of the second sub-layer 405 is copper. In this way, the first sub-layer 404 made of copper and the second sub-layer 405 made of copper are formed by the physical deposition process and the liquid phase deposition process respectively, which can improve the adhesion between the copper and the inner wall of the through-hole 401. This method of depositing the metal layer 403 on the inner wall of the through-hole 401 is applicable to glass through-holes 401 with high aspect ratios and has high reliability. Exemplarily, the physical vapor deposition process is a magnetron sputtering process; the liquid phase deposition process is a chemical deposition process or an electroplating deposition process, so that the first deposition process is a magnetron sputtering process; and the second deposition process is a chemical deposition process or an electroplating deposition process.

[0062] In another embodiment, the first deposition process is a physical vapor deposition process, and the material of the first sublayer 404 is titanium. The second deposition process is a physical vapor deposition process, and the material of the second sublayer 405 is copper. Forming the first sublayer 404 of titanium and the second sublayer 405 of copper through physical deposition processes can improve the adhesion between the copper and the inner wall of the through-hole 401. This method of depositing the metal layer 403 on the inner wall of the through-hole 401 is suitable for glass through-holes 401 with an aspect ratio of 10:1 or less. Exemplarily, the physical vapor deposition process is a magnetron sputtering process; thus, the first deposition process is a magnetron sputtering process; and the second deposition process is a magnetron sputtering process.

[0063] Combine Figure 3 、 Figure 4 、 Figure 5 and Figure 9As shown, in other embodiments, in step S200, the metal layer 403 further includes a third sublayer 406, and the metal layer 403 further includes the third sublayer 406. The third sublayer 406 is deposited on the second sublayer 405 using a third deposition process; after the second sublayer 405 is formed using a second deposition process, the third sublayer 406 is deposited on the second sublayer 405 using a second deposition process. The metal layer 403 formed in this way has a multi-layer structure. The method of depositing the metal layer 403 on the inner wall of the through hole 401 can be applied to glass through holes 401 with a high aspect ratio and has high reliability. The method of depositing the metal layer 403 on the inner wall of the through hole 401 includes:

[0064] Step S201 , using a first deposition process to deposit a first sub-layer 404 on the inner wall of the through hole 401 ;

[0065] Step S202 , using a second deposition process to deposit a second sub-layer 405 on the first sub-layer 404 , so that in the radial direction of the through-hole 401 , the first sub-layer 404 is located between the second sub-layer 405 and the inner wall of the through-hole 401 ;

[0066] In step S203, a third deposition process is used to deposit a third sublayer 406 on the second sublayer 405. In this way, in the radial direction of the through-hole 401, the second sublayer 405 is located between the third sublayer 406 and the first sublayer 404. Thus, the metal layer 403 has a multi-layer structure, which can improve the adhesion of copper to the inner wall of the through-hole 401 and improve the conductivity of the metallized through-hole 401. Exemplarily, the third deposition process is a liquid phase deposition process, and the material of the third sublayer 406 is copper. The liquid phase deposition process is a chemical deposition process or an electroplating deposition process, and thus the third deposition process is a chemical deposition process or an electroplating deposition process.

[0067] It is understood that in step S200, the number of first sub-layers 404 can be one or more, the number of second sub-layers 405 can be one or more, and the number of third sub-layers 406 can be one or more; and "more" can mean 2 or 3. For example, the number of first sub-layers 404 is one, the number of second sub-layers 405 is one, and the number of third sub-layers 406 is one.

[0068] After step S200, that is, after depositing the metal layer 403 on the inner wall of the through hole 401, step S300 is then performed. When performing step S300, the metal layer 403 needs to be heat-treated as a whole. This heat treatment improves the adhesion between the metal layer 403 and the inner wall of the through hole 401, so that the heat-treated metal layer 403 forms the seed layer 402. Exemplarily, the heat treatment is a sintering process; the sintering process can form a mosaic structure between the metal layer 403 and the glass substrate 400, greatly improving the adhesion. After sintering, the metal seed layer 402 is denser, more conductive, and has greatly enhanced electrical properties. The mechanical properties of the metal seed layer 402 are also greatly enhanced.

[0069] During the sintering process, the substrate 400 is placed in a nitrogen environment, wherein the oxygen content in the nitrogen environment is 200ppm-5000ppm. Exemplarily, the oxygen content in the nitrogen environment is 200ppm, 500ppm, 1000ppm, 2000ppm, 3000ppm, 4000ppm, or 5000ppm. During the sintering process, the temperature required for sintering is 100°C-500°C. Thus, during the sintering process, maintaining the temperature at the predetermined temperature is conducive to improving the adhesion between the metal layer 403 and the inner wall of the through hole 401. Exemplarily, the temperature required for sintering is 100°C, 200°C, 300°C, 400°C, or 500°C. During the sintering process, the sintering time at the predetermined temperature is 10 minutes-60 minutes. Exemplarily, the sintering time is 10 minutes, 20 minutes, 30 minutes, 35 minutes, 40 minutes, 50 minutes, or 60 minutes. During the sintering process, the temperature and time required for sintering can be specifically selected based on the material of the sub-layer and the glass substrate 400. The sintering temperature of copper is lower than that of titanium. The sintering temperature of soda-lime glass is lower than that of borosilicate glass. Of course, in some other possible embodiments, during the sintering process, the oxygen content in the nitrogen environment can also be other values within the range of 200ppm-5000ppm, the sintering temperature can also be other values within the range of 100°C-500°C, and the sintering time can also be other values within the range of 10 minutes-60 minutes.

[0070] In the embodiment of the present application, the magnetron sputtering process is to fill argon gas in a vacuum environment, and then apply an electromagnetic field between the metal target and the substrate 400 to ionize it to produce a glow discharge. The argon ions are accelerated to move toward the metal target and bombard the target. Finally, the target particles escaping from the surface of the metal target are deposited on the substrate 400 and grow into a thin film. The magnetron sputtering process can achieve uniform film thickness and easy control. In the embodiment of the present application, when the magnetron sputtering process is adopted, the vacuum degree of the vacuum environment is 0.4Pa-0.5Pa, for example, the vacuum degree is 0.4Pa, 0.45Pa or 0.5Pa. The gas flow rate of argon is 100sccm-150sccm, where sccm is the full name of standard cubic centimeter per minute, which stands for standard milliliters per minute in Chinese. The power used in the magnetron sputtering process is 4kW-8kW, which refers to the electric power applied to the target material (such as copper or titanium) and is measured in kilowatts (kW). For example, the power can be 4kW, 5kW, 6kW, 7kW or 8kW. The process of forming a sublayer using the magnetron sputtering process, such as the process of forming the first sublayer 404 or the process of forming the second sublayer 405, can be called a coating process. The duration of the coating process can be called a coating time, which also refers to the duration of the target material (such as titanium or copper) being bombarded by the plasma at the set power, and the atoms being sputtered and deposited onto the substrate 400 (such as the inner wall of the TGV through-hole 401), measured in seconds. The coating time is 10 seconds to 1500 seconds. The coating time is proportional to the coating thickness. The longer the coating time, the thicker the coating thickness. The coating refers to the sublayers of the metal layer 403, such as the first sublayer 404 and the second sublayer 405. For example, the coating time is 10 seconds, 50 seconds, 100 seconds, 200 seconds, 300 seconds, 500 seconds, 800 seconds, or 1000 seconds. Specifically, when a magnetron sputtering process is used, the thickness of the sub-layer, the coating time, and the power of the magnetron sputtering can be selected accordingly according to different application scenarios.

[0071] In an embodiment of the present application, when the metal layer 403 is a single-layer structure, that is, the metal layer 403 can only include the first sub-layer 404, the material of the first sub-layer 404 can be copper, and the first deposition process is a magnetron sputtering process. In this way, the method of depositing the metal layer 403 on the inner wall of the through hole 401 can be adapted to a glass through hole 401 with a depth-to-diameter ratio of less than 10:1.

[0072] When the metal layer 403 is a multi-layer structure, that is, the metal layer 403 can only include a first sublayer 404 and a second sublayer 405, the material of the first sublayer 404 can be titanium, and the material of the second sublayer 405 can be copper. The first deposition process is a magnetron sputtering process, and the second deposition process is a magnetron sputtering process. In this way, the method of depositing the metal layer 403 on the inner wall of the through hole 401 can be adapted to glass through holes 401 with an aspect ratio of less than 10:1.

[0073] When the metal layer 403 is a multi-layer structure, that is, the metal layer 403 can only include the first sublayer 404 and the second sublayer 405, the material of the first sublayer 404 can be copper, the material of the second sublayer 405 is copper, the first deposition process is a magnetron sputtering process, and the second deposition process is a chemical deposition process or an electroplating deposition process. In this way, the method of depositing the metal layer 403 on the inner wall of the through hole 401 can be applied to glass through holes 401 with a high aspect ratio, and its reliability is high.

[0074] When the metal layer 403 is a multi-layer structure, that is, the metal layer 403 can only include the first sublayer 404, the second sublayer 405 and the third sublayer 406, the material of the first sublayer 404 can be titanium, the material of the second sublayer 405 is copper, and the material of the third sublayer 406 is copper. The first deposition process is a magnetron sputtering process, the second deposition process is a magnetron sputtering process, and the third deposition process is a chemical deposition process or an electroplating deposition process. In this way, the method of depositing the metal layer 403 on the inner wall of the through hole 401 can be applied to glass through holes 401 with a high aspect ratio and has high reliability.

[0075] It should be noted that, in some other possible embodiments, when the metal layer 403 includes the first sub-layer 404, the second sub-layer 405, and the third sub-layer 406, the material of the first sub-layer 404 may be titanium, the material of the second sub-layer 405 may be copper, the material of the third sub-layer 406 may be copper, the first sub-layer 404 is formed by a magnetron sputtering process, the second sub-layer 405 is formed by a chemical deposition process or an electroplating deposition process, and the third sub-layer 406 is formed by a chemical deposition process or an electroplating deposition process. In still other possible embodiments, when the metal layer 403 includes the first sub-layer 404, the second sub-layer 405, and the third sub-layer 406, the material of the first sub-layer 404 may be copper, the material of the second sub-layer 405 may be copper, the material of the third sub-layer 406 may be copper, the first sub-layer 404 is formed by a magnetron sputtering process, the second sub-layer 405 is formed by a chemical deposition process or an electroplating deposition process, and the third sub-layer 406 is formed by a chemical deposition process or an electroplating deposition process. It should be noted that in some other possible implementations, after preparing the seed layer 402 in the embodiment of the present application, the through hole 401 can be filled; the material of the substrate 400 is not limited to glass, but can also be silicon; since the diameter of the through hole 401 is small, the through hole 401 cannot be directly filled with a filling process. When filling is required, a seed layer 402 needs to be formed first.

[0076] An embodiment of the present application also provides a seed layer substrate, which includes a substrate 400 and a seed layer 402; the substrate 400 has a through hole 401, and the inner wall of the through hole 401 is provided with a seed layer 402, and the seed layer 402 is prepared using the through hole seed layer preparation method in any embodiment of the present application, wherein the material of the substrate 400 is glass.

[0077] To sum up, the embodiment of the present application adopts a magnetron sputtering process and / or chemical copper deposition to form a metal layer 403, and then performs a sintering process on the metal layer 403, which can effectively improve the adhesion between the seed layer 402 on the inner wall of the through hole 401 of the glass substrate 400 and the substrate 400, improve the crystallization density of the metal seed layer 402, and improve its conductivity and mechanical properties.

[0078] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A method for preparing a through-hole seed layer, characterized in that: include: forming a through hole in the substrate; Depositing a metal layer on an inner wall of the through hole, wherein the metal layer includes a first sublayer deposited by a first deposition process; The metal layer is heat-treated to form a seed layer.

2. The method for preparing a through-hole seed layer according to claim 1, wherein: The first deposition process is a physical vapor deposition process; The first sub-layer is made of titanium or copper.

3. The method for preparing a through-hole seed layer according to claim 1, wherein: The metal layer further includes a second sublayer, and the second sublayer is deposited on the first sublayer using a second deposition process.

4. The method for preparing a through-hole seed layer according to claim 3, wherein: The first deposition process is a physical vapor deposition process, the material of the first sub-layer is titanium, the second deposition process is a liquid phase deposition process, and the material of the second sub-layer is copper; Alternatively, the first deposition process is a physical vapor deposition process, the material of the first sub-layer is copper, the second deposition process is a liquid phase deposition process, and the material of the second sub-layer is copper; Alternatively, the first deposition process is a physical vapor deposition process, and the material of the first sub-layer is titanium; the second deposition process is a physical vapor deposition process, and the material of the second sub-layer is copper.

5. The method for preparing a through-hole seed layer according to claim 4, wherein: The metal layer further includes a third sublayer, and the third sublayer is deposited on the second sublayer using a third deposition process.

6. The method for preparing a through-hole seed layer according to claim 5, wherein: The third deposition process is a liquid phase deposition process, and the material of the third sub-layer is copper.

7. The method for preparing a through-hole seed layer according to claim 2, 4, 5 or 6, wherein: The physical vapor deposition process is a magnetron sputtering process.

8. The method for preparing a through-hole seed layer according to claim 4, 5 or 6, wherein: The liquid phase deposition process is a chemical deposition process; or, the liquid phase deposition process is an electroplating deposition process.

9. The method for preparing a through-hole seed layer according to any one of claims 1 to 8, wherein: The heat treatment is a sintering process; the material of the substrate is glass.

10. A seed layer substrate, characterized in that: It comprises a substrate and a seed layer; the substrate has a through hole, the inner wall of the through hole is provided with the seed layer, and the seed layer is prepared by the through hole seed layer preparation method as described in any one of 1-9.

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