Apparatus, system and method for integrating passive elements into electronic bridge components

Abstract

A bridging device includes a bridging feature that includes a semiconductor material. The bridging device also includes one or more routing layers that bridge the component, the one or more routing layers sized to electrically couple the first die and the one or more second dies. In addition, the bridge device includes one or more passive elements integrated into the bridge component and configured to store charge. Various other apparatuses, systems, and methods are also disclosed.

Description

Background Art

[0001] In computing systems, circuits can be designed on separate components (such as dies or chips) and combined to create more complex systems. Some integrated circuits are designed to perform specific functions of a computing system, and each integrated circuit is added to a computing device as a modular piece. For example, a graphics processor chip and a memory card can be added separately to a substrate or printed circuit board to work together as part of a display device. In some systems, an electronic bridge can be coupled to a die or chiplet to connect two separate integrated circuits. For example, a silicon bridge can include its own integrated circuit that transmits current and signals between the dies. Each of these components can also be powered by a power supply through a base substrate or other connectivity components. BRIEF DESCRIPTION OF THE DRAWINGS

[0002] The accompanying drawings illustrate several example implementations and are a part of the specification. Together with the following description, these drawings illustrate and explain the various principles of the present disclosure.

[0003] Figure 1 A detailed view of an example bridging device with example integrated passive components is illustrated.

[0004] Figure 2 A side view of an example bridging device with example integrated passive components and example integrated active components is illustrated.

[0005] Figure 3 A side view of an example system with a bridge device blocking power to an example electronic die is illustrated.

[0006] Figure 4 A side view of an example system using an example bridging device with example integrated passive components is illustrated.

[0007] Figure 5 A side view of an alternative example system using an example bridging device with example integrated passive components is illustrated.

[0008] Figure 6 A top view of another example system using the example bridging device with additional example integrated passive components is illustrated.

[0009] Figure 7 is a block diagram illustrating an example flow of charge in an example system using an example bridging device.

[0010] Figure 8 is a flow chart of an example manufacturing method for integrating passive components into an electronic bridge component.

[0011] Throughout the drawings, the same reference numerals and descriptions indicate similar, but not necessarily identical, elements. Although the example implementations described herein are susceptible to various modifications and alternative forms, specific implementations have been illustrated by way of example in the drawings and will be described in detail herein. However, the example implementations described herein are not intended to be limited to the particular forms disclosed. On the contrary, this disclosure covers all modifications, equivalents, and alternatives falling within the scope of the appended claims. DETAILED DESCRIPTION

[0012] The present disclosure as a whole relates to apparatus, systems, and methods for integrating passive components into electronic bridge components. As described below, by connecting multiple electronic components to an electronic bridge, a computing system can combine more components into a single device or system. For example, a silicon bridge provides dense connectivity between multiple dies and chiplets. In this example, the dies and chiplets are placed on a substrate that can power the components, such as through vertical copper pillars. In order to maintain signal integrity across the dies or chips, the power supply requires a certain degree of stability and reliability to deliver consistent power to the circuit.

[0013] However, the area of the die or chiplet covered by the bridge may hinder power to the circuit. In other words, the silicon bridge may block power delivery to the die in the area where the bridge meets the die, thereby creating an obstruction. The obstruction results in less reliable local power distribution to the die and reduced circuit performance. In some examples, power can be redirected around the intersection of the bridge, resulting in a longer distance between the power supply and the die. However, the longer distance of supplying power laterally across the die rather than through vertical columns may result in increased resistance and less efficient and reliable power delivery. For example, due to the higher rate of change of current, the longer distance may produce a higher voltage drop and a larger effect. In addition, the obstruction may also affect system performance by limiting clock speed, because higher speeds result in more unreliable power due to the possibility of sudden current draw.

[0014] In other examples, larger chiplets might add more capacitors to provide additional power and / or more connections to the power source. However, these additional components impact the system's form factor and potential performance, resulting in higher design overhead to ensure power delivery. In other words, the additional components require more space and cost to implement. Therefore, a more efficient bridge design is needed to ensure power is delivered to the blocked area.

[0015] In some embodiments, the disclosed bridging device includes integrated passive components capable of storing charge, such as deep trench capacitors (DTCs). In these embodiments, the stored charge can then be used to power the die or chip connected to the bridging device. By maintaining and storing power in the passive components, the bridging device can improve the stability of the power supply to the die. In a non-limiting example, the disclosed bridging device can include semiconductor materials, such as silicon. By integrating the passive components directly into the silicon material of the silicon bridging portion, the bridging device can avoid increasing the area required to power the connected die. In some non-limiting examples, different passive components (such as inductors or other types of capacitors) can be integrated into the bridging portion. In other examples, the bridging device can be an active bridging portion with similar integrated components to provide power to the active components of the bridging device.

[0016] Additionally, a computing system may include a substrate that delivers power to multiple components, including dies, chips, bridges, or other combinations of electronic components. By integrating passive elements, such as capacitors, into the silicon bridge itself, the bridge can store and provide additional charge during current draw events for the corresponding die. By storing additional power in the bridge, the area of the die or chiplet covered by the bridge can draw current from a closer location during a surge, rather than relying on a power source that is more distant. In other words, the passive elements improve the power network in and near the area of the chip or die blocked by the bridge, which can also increase local decoupling capacitance. In these examples, the passive elements provide more stable power to the computing system as a whole. Thus, the disclosed apparatus, systems, and manufacturing methods integrate passive elements into the bridge device for better power delivery.

[0017] As described in greater detail below, the present disclosure describes various apparatuses, systems, and methods for integrating passive components into electronic bridge components. In one embodiment, a bridge device includes a bridge component comprising a semiconductor material. The bridge device also includes one or more wiring layers of the bridge component, the one or more wiring layers being dimensioned to electrically couple a first die and one or more second dies. Additionally, the bridge device includes one or more passive components integrated into the bridge component and configured to store charge.

[0018] In one example, the wiring layer is provided on a side of the bridge device facing the first die and the second die.

[0019] In one example, the bridge device may further include one or more optional passive components. In this example, the optional passive components may include an integrated inductor, an integrated resistor, a transformer, a diode, and / or a fuse.

[0020] In one example, the passive element configured to store charge includes an integrated capacitor. In this example, the integrated capacitor provides the stored charge to the first die, the second die, and / or different elements integrated into the bridge component via an integrated circuit that draws current.

[0021] In one example, a passive element can be positioned on the bridge device to provide stored charge to an area of the first die overlapping the bridge device and / or an area of the second die overlapping the bridge device. In this example, the passive element can be configured to increase the decoupling capacitance of the bridge device in an area around the passive element and in an area of the first die overlapping the bridge device and / or an area of the second die overlapping the bridge device. In this example, a second passive element can be integrated into the bridge component and configured to store charge, wherein the second passive element is positioned on the bridge device between the area of the first die overlapping the bridge device and the area of the second die overlapping the bridge device.

[0022] In one example, the bridge device may include a passive bridge portion and / or an active bridge portion. In this example, the passive elements of the active bridge portion may be configured to provide stored charge to one or more active elements of the active bridge portion.

[0023] In one example, the bridge device may further include one or more through silicon vias (TSVs) embedded in the bridge component such that the TSVs conduct charge through one or more layers of the bridge device.

[0024] In one embodiment, a system includes a first die comprising a first integrated circuit in a semiconductor material. The system also includes one or more second dies comprising one or more second integrated circuits in a semiconductor material and disposed within a distance of the first die. Additionally, the system includes one or more substrates coupled to the first die and the second die such that the substrates transfer charge to the first die and the second die. Additionally, the system includes one or more bridge devices sized to span the distance and electrically couple the first die and the second die, wherein one or more passive components are integrated into the bridge devices to store charge.

[0025] In one example, the substrate is coupled to the first die and the second die at a metal layer of the first die and a metal layer of the second die.

[0026] In one example, the passive component is positioned on the bridge device based on a first integrated circuit of a first die. Additionally or alternatively, the passive component is positioned on the bridge device based on a second integrated circuit of a second die.

[0027] In one example, a bridge device is electrically coupled to a first die and a second die such that the bridge device overlaps an area of the first die and an area of the second die. In this example, during a drain event of the first die, the area of the first die that overlaps the bridge device draws current from charge laterally across a substrate of the first die and / or stored by passive components of the bridge device. In this example, during a drain event of the second die, the area of the second die that overlaps the bridge device draws current from charge laterally across a substrate of the second die and / or stored by passive components of the bridge device.

[0028] In one embodiment, a manufacturing method includes coupling a first die to one or more substrates such that the substrates transfer charge to the first die. The manufacturing method also includes coupling a second die to the substrates such that the substrates transfer charge to the second die. The manufacturing method then includes integrating one or more passive components into a bridge device, wherein the passive components are configured to store charge. Finally, the manufacturing method includes electrically coupling the bridge device to the first die and the second die such that the passive components are electrically coupled to the first die and / or the second die.

[0029] In one example, electrically coupling the bridge device to the first die and the second die includes electrically coupling a wiring layer of the bridge device to a metal layer of the first die, a metal layer of the second die, a different layer of the first die, and / or a different layer of the second die.

[0030] According to the general principles described herein, the features of any specific implementation described herein can be used in combination with each other. These and other specific implementations, features and advantages will be more fully understood after reading the following detailed description in conjunction with the accompanying drawings and claims.

[0031] The following will refer to Figures 1 to 2 A detailed description of an example apparatus for integrating passive components into an electronic bridge component is provided. Figure 3 A detailed description of a system having a bridge device that blocks power to an electronic die is provided. Figures 4 to 6 A detailed description of a system using a bridge with integrated passive components is provided. Figure 7 Provides a detailed description of the flow of charge. Figure 8 A detailed description of an exemplary method of fabricating a bridging device with integrated passive components is provided.

[0032] Figure 1A detailed view of an example bridging device 100 is illustrated with example integrated passive components 106(1)-(N). In a non-limiting example, the term "bridge" refers to an electronic component capable of electrically coupling two other electronic components. Examples of bridges include, but are not limited to, elevated fan-out bridges (EFBs), embedded multi-die interconnect bridges (EMIBs), silicon bridges, and / or any other type or form of connectivity bridge component. Figure 1 In some examples, bridge device 100 includes a bridge member 102 comprising a semiconductor material, such as silicon. In some examples, bridge member 102 comprises a rigid material that retains a particular form. In some examples, the semiconductor material includes one or more portions that act as an insulator and one or more portions that act as a conductor.

[0033] exist Figure 1 In an example, the bridging device 100 includes a wiring layer 104 of a bridging component 102, the wiring layer being sized to electrically couple a first die and one or more second dies. For example, the bridging device 100 can be a silicon bridging portion that provides electronic connectivity between the first die and the second die through the wiring layer 104. In this example, the wiring layer 104 can include an integrated circuit designed into the silicon material of the bridging device 100. In non-limiting examples, the terms "die" and "chip" refer to modular blocks that contain integrated circuits. In these examples, the term "integrated circuit" refers to an electronic circuit that is directly integrated and / or etched into an electronic component. Examples of dies or chips include, but are not limited to, a system on a chip (SoC), a graphics processing unit (GPU), a central processing unit (CPU), a high bandwidth memory (HBM) stack, an interface circuit, a serializer / deserializer (SerDes) block, a semiconductor chip, and / or any other suitable modular component with an integrated circuit.

[0034] Additionally, the bridging device 100 includes passive components 106(1)-(N) integrated into the bridging component 102. In some examples, one or more of the passive components 106(1)-(N) are configured to store charge. In a non-limiting example, the term "passive component" refers to an electronic component that can receive power and does not actively switch external power or current. Examples of passive components include, but are not limited to, deep trench capacitors (DTCs), inductors, resistors, metal-insulator-metal capacitors (MIM capacitors), air gap capacitors, through silicon vias (TSVs), and / or any other suitable passive component. Figure 1 In the example of , passive components 106 ( 1 )-(N) may include integrated capacitors that store charge and / or alternative types of passive components that perform other functions (e.g., regulating current), such as integrated inductors and / or integrated resistors. In addition, Figure 1The bridge device 100 represents a passive bridge. In a non-limiting example, the term "passive bridge" refers to a bridge that has only passive components and / or does not actively switch external power or current.

[0035] Figure 2 A side view of a different bridging device 100 with integrated passive components 106(1)-(10) and integrated active components 202(1)-(4) is illustrated. Figure 1 compared to, Figure 2 Bridge device 100 represents an active bridge. In non-limiting examples, the term "active bridge" refers to a bridge having active elements that require power to operate. In non-limiting examples, the term "active element" refers to an electronic component that can control power and requires external power to operate. Examples of active elements include, but are not limited to, computing devices, transistors, and / or any other type of active component.

[0036] In some examples, the passive components 106(1)-(6) of the active bridge portion are configured to provide stored charge to the active components 202(1)-(4) (such as transistors). In other examples, the bridge device 100 includes one or more through silicon vias (TSVs) embedded in the bridge component 102, such that the TSVs conduct charge through one or more layers of the bridge device 100. Figure 2 In the example of , the passive components 106 (7)-(10) may represent embedded TSVs that enable power delivery directly through the bridge device 100. In this example, vias such as TSVs may contain a conductive material (such as copper) to more easily transmit power.

[0037] Additionally, other examples of the bridge device 100 may integrate different types of passive components, combinations of different passive components, and / or different combinations of passive and active components. For a passive bridge, the passive components provide stored charge to the die coupled to the bridge as needed. For an active bridge, the passive components provide stored charge to the die and / or active components of the bridge.

[0038] Figure 3A side view of an example system 300 is illustrated having a bridge device 100 that blocks the flow of charge 308 to a first die 302 and a second die 304. System 300 generally represents any type or form of computing system or computing device having electronic components for performing computing functions. Examples of system 300 include, but are not limited to, chiplets, printed circuit boards (PCBs), processors, and / or other electronic components, or combinations thereof. Additional examples of system 300 include, but are not limited to, laptop computers, tablet devices, desktop computers, servers, cellular phones, personal digital assistants (PDAs), multimedia players, embedded systems, wearable devices (e.g., smart watches, smart glasses, etc.), smart vehicles, so-called Internet of Things devices (e.g., smart appliances, etc.), game consoles, servers, variations or combinations of one or more of the foregoing, portions of one or more of the foregoing, or any other suitable computing device.

[0039] Many other devices or subsystems can be connected to Figures 3 to 7 In contrast, Figures 3 to 7 All components and devices illustrated in the present invention need not be present to practice the specific implementations described and / or illustrated herein. The devices and subsystems mentioned above may also be used with Figures 3 to 7 System 300 may also utilize any number of software, firmware, and / or hardware configurations.

[0040] exist Figure 3 In the example of , system 300 includes a first die 302 including a first integrated circuit in a semiconductor material and a second die 304 including a second integrated circuit in a semiconductor material and disposed within a distance of first die 302. For example, first die 302 and second die 304 may both be silicon dies having integrated circuits etched into the silicon material. Figure 3 In the example of FIG, the system 300 further includes a substrate 306 coupled to the first die 302 and the second die 304 such that the substrate 306 transfers charge 308 to the first die 302 and the second die 304. In this example, the system 300 further includes a bridge device 100 sized to span the distance between the first die 302 and the second die 304 and electrically couple the first die and the second die. However, in this example, the bridge device 100 blocks the charge 308 from the area of the first die 302 that overlaps with the bridge device 100 and the area of the second die 304 that overlaps with the bridge device 100, as illustrated by the dashed arrows. In this example, the bridge device 100 does not include Figure 1 Passive components 106(1)-(N).

[0041] Figure 4 Illustrated using Figure 1A side view of a system 300 of integrated passive components 106(1)-(N) of a bridging device 100. Figure 4 In the example of , passive components 106(1)-(N) are integrated into the bridge device 100 to store charge 308. In this example, Figure 1 The wiring layer 104 is disposed on a side of the bridge device 100 that faces the first die 302 and the second die 304, thereby providing connectivity between the first die 302 and the second die 304. In addition, passive elements 106(1)-(N) are positioned on the bridge device 100 to store charge 308 and provide the stored charge 308 to an area of the first die 302 that overlaps with the bridge device 100 and / or an area of the second die 304 that overlaps with the bridge device 100. In other words, the passive elements 106(1)-(N) are positioned at a location on the bridge device 100 that obstructs power supply, as indicated by the dashed arrows.

[0042] exist Figure 4 In the example of FIG. 1 , substrate 306 is coupled to first die 302 and second die 304 at metal layer 402(1) of first die 302 and metal layer 402(2) of second die 304. In this example, wiring layer 104 of bridge device 100 is also coupled to metal layers 402(1)-(2). In some examples, bridge device 100 is electrically coupled to first die 302 and second die 304 such that bridge device 100 overlaps an area of first die 302 and an area of second die 304. In these examples, the area of first die 302 that overlaps bridge device 100 draws current from substrate 306 laterally across first die 302 and / or from charge 308 stored by passive elements 106(1)-(N) of bridge device 100. Similarly, the area of the second die 304 that overlaps the bridge device 100 draws current from the substrate 306 laterally across the second die 304 and / or from charge 308 stored by the passive elements 106 ( 1 )-(N) of the bridge device 100 .

[0043] In the above examples, drawing current laterally across the first die 302 and / or the second die 304 increases the delay and / or voltage drop of power to the overlapping area. In contrast, drawing current from power stored in the passive elements 106(1)-(N) provides a closer power source with less delay and / or less voltage drop. In other words, integrated passive elements (such as capacitors) provide additional charge at a local source to reduce the effect of distance. Additionally, Figure 2The bridge device 100 may include TSVs such that overlapping regions of the first die 302 and / or the second die 304 draw power directly through the bridge device 100 via the TSVs, thereby reducing the distance compared to drawing current laterally across the first die 302 and / or the second die 304 and supplementing power from local sources of the passive components 106(1)-(N).

[0044] In some examples, the passive elements 106(1)-(N) are configured to increase the decoupling capacitance of the bridge device 100 in an area around each of the passive elements 106(1)-(N) and in an area of the first die 302 that overlaps the bridge device 100 and / or an area of the second die 304 that overlaps the bridge device 100. In a non-limiting example, the term "decoupling capacitance" refers to the ability of a decoupling capacitor to store charge. In these examples, the term "decoupling capacitor" refers to a capacitor used to decouple or separate portions of a circuit. For example, a DTC can provide additional local decoupling capacitance so that the overlapping area of the first die 302 and the second die 304 draws charge from the DTC without affecting the global power supply, thereby improving overall power supply stability during sudden power draws.

[0045] Figure 5 A side view of an alternative system 300 using a bridging device 100 with integrated passive components 106(1)-(N) is illustrated. Figure 5 In the example of , the first die 302(1)-(2) may represent a first chiplet, and the second die 304(1)-(2) may represent a second chiplet. Figure 5 As shown in the example of FIG, the bridge device 100 can be coupled to the first die 302(2) and the second die 304(2) from the top rather than from the bottom (as when integrated with the substrate 306). In this example, the wiring layer 104 of the bridge device 100 is coupled to different layers of the first die 302(2) and the second die 304(2), rather than from the bottom. Figure 4 of metal layers 402(1)-(2).

[0046] although Figure 5 The bridge device 100 does not directly block the charge 308, but the passive components 106(1)-(N) continue to provide additional decoupling capacitance to improve the quality of power delivery from the power network to the first die 302(2) and the second die 304(2). For example, for sensitive, high-speed chip-to-chip circuits, the placement of the bridge device 100 can improve overall power stability. Alternatively, the bridge device 100 can be placed in other configurations based on the different needs and configurations of the various dies and chiplets of the system 300.

[0047] Figure 6 A top view of a system 300 using a bridging device 100 with additional integrated second passive components 602(1)-(N) is illustrated. In some examples, Figure 1 The passive components 106 ( 1 )-(N) are positioned on the bridge device 100 based on the first integrated circuit of the first die 302 and / or the second integrated circuit of the second die 304 . Figure 6 In an example, the bridge device 100 includes a second passive element 602(1)-(N) integrated into the bridge portion 102 and configured to store charge 308. In this example, the second passive element 602(1)-(N) is positioned on the bridge device 100 between an area of the first die 302 that overlaps with the bridge device 100 and an area of the second die 304 that overlaps with the bridge device 100. In other words, the bridge device 100 may include additional passive elements to add local decoupling capacitance to the first die 302 and / or the second die 304 beyond the overlapping area. In this example, the additional decoupling capacitance resulting from the second passive element 602(1)-(N) may also improve the power stability of the active bridge portion. In other examples, the system 300 may include a second passive element 602(1)-(N) that is integrated into the bridge portion 102 and configured to store charge 308. Figures 4 to 6 Alternative configurations may have more or fewer components than those illustrated.

[0048] Figure 7 is a block diagram illustrating an exemplary flow of charge 308 in a system 300 using a bridge device 100. Figure 7 As shown, substrate 306 provides charge 308 to first die 302, second die 304, and bridge device 100. Additionally, passive component 106 of bridge device 100 retains stored charge 702 from charge 308. In this example, active component 202 can draw power from stored charge 702 of passive component 106.

[0049] In some examples, passive element 106 represents an alternative passive element, such as an integrated inductor, an integrated resistor, a transformer, a diode, a fuse, and / or any type of passive element that does not store charge. In these examples, the alternative passive element, such as an integrated inductor or an integrated resistor, can regulate the current of charge 308 and / or stored charge 702. In other examples, passive element 106 represents an integrated capacitor or other type of passive element that can store charge. In these examples, the integrated capacitor provides the stored charge 702 to the first die 302, the second die 304, and / or different components integrated into the bridge device 100 (such as active element 202) via the integrated circuit of the bridge device 100 that draws current. In some examples, active element 202 can also regulate or control charge 308 and / or stored charge 702.

[0050] exist Figure 7 In the example of FIG. 7 , during a drain event 704 of the first die 302, the area of the first die 302 that overlaps with the bridge device 100 draws current from the stored charge 702 stored by the passive components 106 of the bridge device 100. In a non-limiting example, the term "drain event" refers to a computing event during which a certain amount of power or current is drawn from a power source, such as during a power surge. By drawing power from the stored charge 702 during the drain event 704, the overlapping area of the first die 302 can increase power stability and speed by supplementing any power drawn from the substrate 306, which in turn reduces the impact of the drain event 704 on the global power supply of the system 300. In other examples, the second die 304 can similarly draw from the stored charge 702 during the drain event.

[0051] Figure 8 Example methods are shown for making, assembling, using, adjusting, or otherwise configuring or forming the systems and apparatus presented herein. Figure 8 The steps shown in can be performed by any individual and / or by any suitable type or form of manual and / or automatic means. Specifically, Figure 8 A flow chart illustrating an exemplary method 800 for manufacturing a bridging device is shown.

[0052] like Figure 8 As shown, at step 810, one or more of the systems described herein may couple a first die to one or more substrates such that the substrates deliver charge to the first die. Figure 4 As illustrated, the first die 302 is coupled to the substrate 306 such that the substrate 306 delivers charge 308 to the first die 302 .

[0053] The systems described herein can perform step 810 in various ways. Figure 4 As shown in , the first die 302 can be coupled to the top surface of the substrate 306, and the substrate 306 can contain conductive material (such as vertical copper pillars) to carry charge 308 from the power supply to the first die 302. Figure 5 In the example shown, first die 302(2) is coupled to substrate 306, which transfers charge 308 to first die 302(2). In this example, first die 302(1) is coupled to first die 302(2), such that charge 308 is then transferred from first die 302(2) to first die 302(1). In other examples, different configurations of dies or chips may be combined as part of first die 302 and powered by substrate 306.

[0054] Return to Figure 8At step 820, one or more of the systems described herein may couple the second die to the substrate so that the substrate delivers the charge to the second die. Figure 4 As illustrated, the second die 304 is coupled to the substrate 306 such that the substrate 306 transfers charge 308 to the second die 304 .

[0055] The system described herein may be implemented in various ways Figure 8 Step 820. Figure 4 In the example of , the second die 304 can be coupled to the top surface of the substrate 306, and the substrate 306 can transfer the charge 308 from the power supply to the second die 304. Figure 5 In the example shown, second die 304(2) is coupled to substrate 306, which transfers charge 308 to second die 304(2). In this example, second die 304(1) is coupled to second die 304(2), such that charge 308 is then transferred from second die 304(2) to second die 304(1). In other examples, similar to first die 302, different configurations of dies or chips can be combined as part of second die 304 and powered by substrate 306.

[0056] Return to Figure 8 At step 830, one or more of the systems described herein may integrate one or more passive components into the bridge device, wherein the passive components are configured to store charge. For example, Figure 1 As illustrated, the passive components 106(1)-(N) are integrated into the bridge device 100, wherein the passive components 106(1)-(N) are configured to store Figure 4 of charge 308.

[0057] The system described herein may be implemented in various ways Figure 8 Step 830. In some examples, passive components such as DTCs can be etched into the silicon material of the bridge device 100. In these examples, deep trenches are etched into the silicon substrate of the bridge device 100, and a dielectric layer is integrated into the deep trenches. Figure 2 In the example shown, passive elements 106(1)-(10) are positioned at both ends of the bridge device 100 based on the intended pairing with the die at the ends. Additionally, the density of the spacing between the passive elements can be adjusted based on the needs of the system 300 and / or the bridge device 100, such as by integrating fewer passive elements for a simpler die design or integrating more and denser passive elements for an active bridge portion.

[0058] Return to Figure 8At step 840, one or more of the systems described herein may electrically couple the bridge device to the first die and the second die such that the passive component is electrically coupled to the first die and / or the second die. Figure 4 As illustrated, the bridge device 100 is electrically coupled to the first die 302 and the second die 304 such that Figure 1 The passive components 106 ( 1 )-(N) are electrically coupled to the first die 302 and the second die 304 .

[0059] The system described herein may be implemented in various ways Figure 8 Step 840. Figure 4 In the example of FIG, the passive components 106(1)-(N) of the bridge device 100 are positioned at locations where the first die 302 and the second die 304 are coupled to the bridge device 100. Therefore, in this example, the passive components 106(1)-(N) are in direct contact with the metal layers 402(1)-(2) of the first die 302 and the second die 304, thereby being electrically coupled to the first die 302 and the second die 304. Figure 4 In the example of , electrically coupling the bridge device 100 to the first die 302 and the second die 304 includes electrically coupling the wiring layer 104 of the bridge device 100 to the metal layer 402 ( 1 ) of the first die 302 and / or the metal layer 402 ( 2 ) of the second die 304 . Figure 5 In the example of FIG, electrically coupling the bridge device 100 to the first die 302 and the second die 304 includes electrically coupling the wiring layer 104 of the bridge device 100 to different layers (such as opposing surfaces) of the first die 302 and / or different layers of the second die 304. Based on the design of the electrical paths and / or circuits of the first die 302 and the second die 304, the placement of the passive elements 106(1)-(N) in the bridge device 100 can be changed to suit the coupling of the bridge device 100 to the first die 302 and the second die 304. Alternatively, the design of the first die 302 and / or the second die 304 can be changed based on the placement of the passive elements 106(1)-(N) in the bridge device 100.

[0060] As described above, the disclosed apparatus, systems, and methods integrate passive components into a bridging device to provide more stable power. Accordingly, specific implementations and systems described herein integrate at least one passive component into a bridging component, such as a silicon substrate. The disclosed bridging device also includes at least one wiring layer that electrically couples a first die and one or more second dies. The computing system disclosed herein includes a substrate that provides power to the first die, the second die, and the bridging device. The passive components of the bridging device then store charge from the system's substrate, and the first die and / or the second die can subsequently draw current from the stored charge of the passive components, particularly during a draw event. Additionally, the bridging device can include one or more active components that also draw current from the stored charge of the passive components. Furthermore, based on the design and circuitry of the first die, the design and circuitry of the second die, the active components of the bridging device, and / or other components of the system, additional passive or active components can be integrated into the bridging device. Thus, the disclosed system and bridge device can deliver faster and more stable power to areas of the die that are otherwise obstructed by the electronic bridge device.

[0061] Although the foregoing disclosure uses specific block diagrams, flow charts, and examples to illustrate various specific implementations, each block diagram component, flow chart step, operation, and / or component described and / or illustrated herein may be implemented individually and / or collectively using various hardware, software, or firmware (or any combination thereof) configurations. Furthermore, any disclosure of components contained within other components should be considered exemplary in nature, as many other architectures may be implemented to achieve the same functionality.

[0062] In some examples, Figures 4 to 6 All or part of the example system 300 in FIG. 3 may represent portions of a cloud computing environment or a web-based environment. A cloud computing environment may provide various services and applications via the Internet. These cloud-based services (e.g., software as a service, platform as a service, infrastructure as a service, etc.) may be accessed through a web browser or other remote interface. The various functions described herein may be provided through a remote desktop environment or any other cloud-based computing environment.

[0063] In some examples, Figures 4 to 6All or part of the example system 300 in the example system 300 can represent various parts of a mobile computing environment. The mobile computing environment can be implemented by various mobile computing devices, including mobile phones, tablet computers, e-book readers, personal digital assistants, wearable computing devices (e.g., computing devices with head-mounted displays, smart watches, etc.), variations or combinations of one or more of the above, or any other suitable mobile computing devices. In some examples, the mobile computing environment can have one or more different features, including, for example, reliance on battery power, presenting only one foreground application at any given time, remote management features, touch screen features, location and motion data (e.g., provided by a global positioning system, gyroscope, accelerometer, etc.), a restricted platform that limits modifications to system-level configurations and / or limits the ability of third-party software to inspect the behavior of other applications, controls that limit the installation of applications (e.g., only from approved application stores), etc. The various functions described herein can be provided to the mobile computing environment and / or can interact with the mobile computing environment.

[0064] The process parameters and step sequences described and / or illustrated herein are provided as examples only and can be changed as needed. For example, although the steps illustrated and / or described herein can be shown or discussed in a particular order, these steps do not necessarily need to be performed in the order illustrated or discussed. The various example methods described and / or illustrated herein can also omit one or more of the steps described or illustrated herein, or include additional steps in addition to those disclosed.

[0065] The foregoing description has been provided to enable others skilled in the art to best utilize various aspects of the example embodiments disclosed herein. This example description is not intended to be exhaustive or limited to any precise form disclosed. Many modifications and variations are possible without departing from the spirit and scope of the present disclosure. The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. In determining the scope of the present disclosure, reference should be made to the appended claims and their equivalents.

[0066] Unless otherwise indicated, the terms "connected to" and "coupled to" (and their derivatives) as used in the specification and claims will be construed to allow both direct and indirect (i.e., via other elements or components) connections. Furthermore, the terms "a" or "an" as used in the specification and claims will be construed to mean "at least one." Finally, for ease of use, the terms "including" and "having" (and their derivatives) as used in the specification and claims are interchangeable with the word "comprising" and have the same meaning.

Claims

1. A bridging device, comprising: a bridging member comprising a semiconductor material; at least one wiring layer of the bridge component, the at least one wiring layer being sized to electrically couple the first die and the at least one second die; and At least one passive component is integrated into the bridge member and is configured to store charge. 2 . The bridge device according to claim 1 , wherein the wiring layer is provided on a side of the bridge device facing the first die and the second die.

3. The bridging device of claim 1, further comprising at least one optional passive component.

4. The bridging device of claim 3 , wherein the alternative passive component comprises at least one of: integrated inductors; integrated resistors; transformer; diode; or Fuse. 5 . The bridging device of claim 1 , wherein the passive element configured to store the charge comprises an integrated capacitor.

6. The bridge device of claim 5 , wherein the integrated capacitor provides the stored charge via an integrated circuit that draws current to at least one of: the first tube core; the second die; or Different elements are integrated into the bridge member.

7. The bridging device of claim 1 , wherein the passive element is positioned on the bridging device to provide the stored charge to at least one of: an area of the first die that overlaps with the bridge device; or An area of the second die that overlaps with the bridge device.

8. The bridging device of claim 7 , wherein the passive element is configured to increase a decoupling capacitance of the bridging device in an area around the passive element and in at least one of: the area of the first die that overlaps with the bridging device; or The area of the second die that overlaps with the bridge device.

9. The bridge device of claim 7 , further comprising a second passive element integrated into the bridge component and configured to store the charge, wherein the second passive element is positioned on the bridge device between the area of the first die overlapping the bridge device and the area of the second die overlapping the bridge device.

10. The bridging device according to claim 1, wherein the bridging device comprises at least one of the following: Passive bridging section; or Active bridging section. 11 . The bridge device of claim 10 , wherein the passive element of the active bridge portion is configured to provide the stored charge to at least one active element of the active bridge portion. 12 . The bridge device of claim 1 , further comprising at least one through silicon via (TSV) embedded in the bridge component, such that the TSV conducts the charge through at least one layer of the bridge device.

13. A system comprising: a first die comprising a first integrated circuit in a semiconductor material; at least one second die comprising a second integrated circuit in the semiconductor material and disposed within a distance of the first die; at least one substrate coupled to the first die and the second die such that the substrate delivers charge to the first die and the second die; and At least one bridge device is sized to span the distance and electrically couple the first die and the second die, wherein at least one passive component is integrated into the bridge device to store the charge.

14. The system of claim 13, wherein the substrate is coupled to the first die and the second die at a metal layer of the first die and a metal layer of the second die.

15. The system of claim 13, wherein the passive element is positioned on the bridging device based on at least one of: the first integrated circuit of the first die; or The second integrated circuit of the second die. 16 . The system of claim 13 , wherein the bridge device is electrically coupled to the first die and the second die such that the bridge device overlaps an area of the first die and an area of the second die.

17. The system of claim 16, wherein the area of the first die overlapping the bridge device during a draw event of the first die draws current from at least one of: laterally across the substrate of the first die; or The charge stored by the passive components of the bridging device.

18. The system of claim 16, wherein the area of the second die overlapping the bridge device during a draw event of the second die draws current from at least one of: laterally across the substrate of the second die; or The charge stored by the passive components of the bridging device.

19. A manufacturing method, comprising: coupling a first die to at least one substrate such that the substrate delivers charge to the first die; coupling a second die to the substrate such that the substrate transfers the charge to the second die; integrating at least one passive component into the bridging device, wherein the passive component is configured to store the charge; and The bridging device is electrically coupled to the first die and the second die such that the passive component is electrically coupled to at least one of: the first die; or The second tube core.

20. The manufacturing method of claim 19, wherein electrically coupling the bridge device to the first die and the second die comprises electrically coupling a wiring layer of the bridge device to at least one of: a metal layer of the first die; a metal layer of the second die; a different layer of the first die; or different layers of the second die.

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