Silicon wafer texturing equipment and texturing process
By designing switchable liquid flow control silicon wafer shroud making equipment, the compatibility problems of silicon wafer processing in different thicknesses and contamination degrees are solved, production efficiency and yield rate are improved, chemical consumption is reduced, and rapid process switching and basket cleaning are achieved.
Patent Information
- Application Number
- CN202410163606.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-05
- Publication Date
- 2025-08-19
AI Technical Summary
Existing fleece making equipment cannot be effectively compatible with silicon wafers of different thicknesses and stain levels, resulting in difficulty in maximizing production efficiency and yield.
A silicon wafer shroud making equipment is designed. Through the combination of adjustment devices and valves, liquid flow control between different tank bodies is realized. It can be switched between coarse throwing process, pre-cleaning process and water washing process to adapt to silicon wafer processing of different thicknesses and dirt levels.
It improves the output, efficiency and yield of the silicon wafer production line, reduces chemical consumption, prevents the silicon wafer from being too thin or warped, and achieves compatibility between rapid process switching and flower basket cleaning.
Smart Images
Figure CN120511206A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of monocrystalline silicon solar cells, and in particular to silicon wafer texturing equipment and a texturing process. Background Art
[0002] Texturing is the first step in the production of passivated emitter and rear contact (PERC) solar cells, which plays the role of cleaning the original silicon wafers and making pyramid-shaped texturing.
[0003] Early texturing processes mostly involved a rough polishing process. While this process offered advantages such as high cleaning performance, it also came with significant disadvantages, including high chemical consumption and wafer weight reduction. To reduce costs, silicon wafer thickness continued to decrease. Excessive weight reduction during rough polishing resulted in wafers that were too thin and exhibited excessive warpage, significantly increasing the complexity of the entire production process. To address this weight reduction issue and further reduce chemical consumption, the texturing process transitioned to a process without rough polishing.
[0004] A simple non-rough polishing process can handle most raw silicon wafers with less contamination. However, in the actual mass production process, due to the need to take into account factors such as the cost and supply of raw silicon wafers, some raw silicon wafers with more contamination will inevitably be produced.
[0005] To address heavily contaminated raw silicon wafers, a double pre-cleaning process was developed. This process minimizes weight loss while improving texturing cleaning capabilities. However, its cleaning capacity is lower than that of the rough polishing process, and it is not compatible with cleaning polyvinylidene fluoride (PVDF) flower baskets.
[0006] Current texturing equipment consists of multiple tanks, each filled with different chemicals, through which silicon wafers are texturized. Each piece of texturing equipment can only handle one type of texturing process and one type of silicon wafer. With wafers of varying thicknesses and contamination levels, maximizing the production line's output, efficiency, and yield is difficult. Summary of the Invention
[0007] Based on this, it is necessary to provide a silicon wafer texturing equipment and texturing process.
[0008] The disclosed embodiment provides a silicon wafer texturing device, which includes a first tank body, a second tank body, a third tank body, a regulating device, an alkaline liquid supply pipe, a hydrogen peroxide supply pipe, a first valve and a second valve. The alkaline liquid supply pipe is connected to the first tank body and the second tank body, and the alkaline liquid supply pipe is connected to the third tank body through the regulating device. The hydrogen peroxide supply pipe is connected to the first tank body through the regulating device, the hydrogen peroxide supply pipe is connected to the second tank body through the second valve, and the hydrogen peroxide supply pipe is connected to the third tank body through the first valve. The regulating device is used to control the connection and disconnection between the alkaline liquid supply pipe and the third tank body, and the regulating device is used to control the connection and disconnection between the hydrogen peroxide supply pipe and the first tank body. The first valve is used to control the connection and disconnection between the hydrogen peroxide supply pipe and the third tank body. The second valve is used to control the connection and disconnection between the hydrogen peroxide supply pipe and the second tank body.
[0009] The silicon wafer texturing equipment provided by the embodiment of the present disclosure is characterized in that the regulating device controls the on-off connection between the hydrogen peroxide supply pipe and the first tank body, so that the first tank body can switch between the rough polishing process and the pre-cleaning process. The second valve controls the on-off connection between the hydrogen peroxide supply pipe and the second tank body, so that the second tank body can switch between the rough polishing process and the pre-cleaning process. The regulating device controls the on-off connection between the alkaline liquid supply pipe and the third tank body, and the first valve controls the on-off connection between the hydrogen peroxide supply pipe and the third tank body, so that the third tank body can switch between the water washing process, the rough polishing process and the pre-cleaning process. The silicon wafer texturing equipment can use different texturing processes to process silicon wafers of different thicknesses and different degrees of contamination, and achieves improvement in at least one aspect of the output, efficiency and yield of the silicon wafer production line, which is conducive to maximizing the output, efficiency and yield of the silicon wafer production line.
[0010] In some embodiments, the regulating device includes a regulating valve, a third valve, and a fourth valve. The hydrogen peroxide supply pipe is connected to the first tank via the regulating valve and the third valve in sequence; the third valve is used to control the flow between the regulating valve and the first tank. The alkaline solution supply pipe is connected to the third tank via the regulating valve and the fourth valve in sequence; the fourth valve is used to control the flow between the regulating valve and the third tank. The regulating valve is used to control flow.
[0011] With this arrangement, the regulating valves can precisely control the flow of hydrogen peroxide entering the first tank and the flow of alkaline liquid entering the third tank. Closing the third valve can reduce the flow of alkaline liquid into the hydrogen peroxide supply pipe, and closing the fourth valve can reduce the flow of hydrogen peroxide into the alkaline liquid supply pipe.
[0012] In some embodiments, the regulating device further includes a fifth valve and a sixth valve. The hydrogen peroxide supply pipe is connected to the regulating valve via the fifth valve, and the fifth valve is used to control the flow of liquid between the hydrogen peroxide supply pipe and the regulating valve. The alkaline liquid supply pipe is connected to the regulating valve via a sixth valve, and the sixth valve is used to control the flow of liquid between the alkaline liquid supply pipe and the regulating valve.
[0013] With this arrangement, when the third valve and the fifth valve are closed simultaneously, the alkaline liquid flows through the regulating device in the alkaline liquid supply pipe; when the fourth valve and the sixth valve are closed simultaneously, the hydrogen peroxide flows through the regulating device in the hydrogen peroxide supply pipe, thereby ensuring the accuracy of liquid flow addition.
[0014] In some embodiments, the silicon wafer texturing apparatus further comprises a hydrogen peroxide tank, and the third valve is connected to the first tank via the hydrogen peroxide tank. The first valve, the second valve, the third valve, the fourth valve, the fifth valve, and the sixth valve are all manually controlled valves, and the regulating valve is an electrically controlled valve.
[0015] The provision of the hydrogen peroxide tank facilitates the provision of hydrogen peroxide to the first tank body, thereby increasing the silicon wafer processing process of the first tank body and improving the output and efficiency of silicon wafer production.
[0016] Manually controlled valves are quick and easy to operate, making it easy to add different liquids to the first, second, and third tanks, facilitating rapid switching of wafer processing processes. Electronically controlled regulating valves enhance the accuracy and precision of liquid addition.
[0017] The embodiment of the present disclosure provides a texturing process, which utilizes the above-mentioned silicon wafer texturing equipment to perform texturing pretreatment on the silicon wafers placed in the flower basket.
[0018] By adopting the silicon wafer texturing equipment provided by the embodiment of the present disclosure, silicon wafers of different thicknesses and different contamination levels can be processed, forming a plurality of different texturing processes.
[0019] In some embodiments, the texturing pretreatment step includes:
[0020] The first batch of silicon wafers are placed in the first tank body for a first rough polishing process, wherein the control and adjustment device disconnects the hydrogen peroxide supply pipe from the first tank body;
[0021] placing a second batch of silicon wafers into the second tank body for a second rough polishing process, wherein the second valve is controlled to disconnect the hydrogen peroxide supply pipe from the second tank body;
[0022] placing the first batch of silicon wafers that have undergone the first rough polishing process into a third tank for a pre-cleaning process, wherein the control regulating device connects the alkaline liquid supply pipe to the third tank, and controls the first valve to connect the hydrogen peroxide liquid supply pipe to the third tank; and
[0023] The second batch of silicon wafers that have undergone the second rough polishing process are placed in the third tank body for a pre-cleaning process, wherein the control adjustment device connects the alkaline liquid supply pipe with the third tank body, and controls the first valve to connect the hydrogen peroxide supply pipe with the third tank body.
[0024] This configuration improves the cleaning capacity of the silicon wafer texturing equipment and enables pre-treatment of thicker and more contaminated silicon wafers. The first and second troughs can simultaneously perform the rough polishing process, improving the output and efficiency of silicon wafer texturing.
[0025] In some embodiments, the texturing pretreatment step includes:
[0026] The silicon wafer is placed in the third tank body for a pre-cleaning process, wherein the control regulating device is connected to the alkaline liquid supply pipe and the third tank body, and the first valve is controlled to connect the hydrogen peroxide supply pipe and the third tank body.
[0027] With this setting, the cleaning ability of the silicon wafer texturing equipment is weaker, and it can pre-treat silicon wafers with smaller thickness and less contamination, reducing the consumption of chemicals, reducing the weight loss of silicon wafers, and preventing the silicon wafers from being too thin or having too high a warp, which increases the difficulty of the process production process.
[0028] In some embodiments, the texturing process further comprises:
[0029] The flower basket is placed in the first tank body for cleaning, wherein the control regulating device disconnects the hydrogen peroxide supply pipe from the first tank body; or
[0030] The flower basket is placed in the second tank body for cleaning, wherein the second valve is controlled to disconnect the hydrogen peroxide supply pipe from the second tank body.
[0031] With this arrangement, the silicon wafers can be pre-treated for texturing while the flower baskets can be cleaned at the same time, which reduces the consumption of chemicals and improves the production efficiency of silicon wafer texturing.
[0032] In some embodiments, the texturing pretreatment step includes:
[0033] Placing the first batch of silicon wafers into the first tank body for a first pre-cleaning process, wherein the control and adjustment device connects the hydrogen peroxide supply pipe to the first tank body;
[0034] placing a second batch of silicon wafers into the second tank body for a second pre-cleaning process, wherein the second valve is controlled to connect the hydrogen peroxide supply pipe with the second tank body;
[0035] The first batch of silicon wafers that have undergone the first pre-cleaning process are placed in the third tank body for a water washing process, wherein the control regulating device disconnects the alkaline liquid supply pipe from the third tank body, and the first valve is controlled to disconnect the hydrogen peroxide solution supply pipe from the third tank body;
[0036] The second batch of silicon wafers that have undergone the second pre-cleaning process are placed in the third tank body for water washing process, wherein the control regulating device disconnects the alkaline liquid supply pipe from the third tank body, and controls the first valve to disconnect the hydrogen peroxide supply pipe from the third tank body.
[0037] This setting can handle silicon wafers with a lot of contamination, and improve the texturing and cleaning capabilities while ensuring low weight loss.
[0038] In some embodiments, the texturing process further comprises:
[0039] Performing texturing on the silicon wafer that has undergone the texturing pretreatment;
[0040] Washing the textured silicon wafer with water;
[0041] Alkaline washing is performed on the washed silicon wafer;
[0042] The alkali-washed silicon wafer is subjected to a secondary water washing;
[0043] The silicon wafer after the second water washing is acid-washed;
[0044] The acid-washed silicon wafer was washed with water three times;
[0045] The silicon wafer that has been washed three times is slowly pulled;
[0046] The silicon wafer after the slow pulling is dried.
[0047] Such a setting can cope with silicon wafers of different thicknesses and different degrees of contamination, can quickly realize the switching of various texturing processes, and is compatible with the cleaning of flower baskets, thereby achieving an improvement in at least one aspect of the output, efficiency and yield of the silicon wafer production line, which is conducive to maximizing the output, efficiency and yield of the silicon wafer production line. BRIEF DESCRIPTION OF THE DRAWINGS
[0048] Figure 1 Schematic diagram of a silicon wafer texturing device in an embodiment of the present disclosure;
[0049] Figure 2 A schematic diagram of a first embodiment of a texturing pretreatment process performed by a silicon wafer texturing device in an embodiment of the present disclosure;
[0050] Figure 3 A schematic diagram of a second embodiment of a texturing pretreatment process performed by a silicon wafer texturing device in an embodiment of the present disclosure;
[0051] Figure 4 is a flowchart of the texturing process in the embodiment of the present disclosure;
[0052] Figure 5 This is a flow chart of a first embodiment of a texturing pretreatment process in an embodiment of the present disclosure;
[0053] Figure 6 This is a flow chart of a second embodiment of the texturing pretreatment process in the embodiment of the present disclosure;
[0054] Figure 7 This is a flow chart of the third embodiment of the texturing pretreatment process in the embodiments of the present disclosure.
[0055] Reference numerals:
[0056] 100. Silicon wafer texturing equipment; 1. First tank body; 2. Second tank body; 3. Third tank body; 4. Adjusting device; 41. Adjusting valve; 42. Third valve; 43. Fourth valve; 44. Fifth valve; 45. Sixth valve; 5. Alkaline liquid supply pipe; 51. First alkaline liquid supply pipe; 52. Second alkaline liquid supply pipe; 53. Third alkaline liquid supply pipe; 6. Hydrogen peroxide supply pipe; 61. First hydrogen peroxide supply pipe; 62. Second hydrogen peroxide supply pipe; 621. First branch pipe; 622. Second branch pipe; 7. First valve; 8. Second valve; 9. Hydrogen peroxide tank; 91. First hydrogen peroxide tank; 92. Second hydrogen peroxide tank; 11. First sodium hydroxide tank; 21. Second sodium hydroxide tank; 31. Third sodium hydroxide tank. DETAILED DESCRIPTION
[0057] To make the above-mentioned purposes, features and advantages of the embodiments of the present disclosure more apparent and understandable, the specific embodiments of the embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the embodiments of the present disclosure. However, the embodiments of the present disclosure can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the connotations of the embodiments of the present disclosure. Therefore, the embodiments of the present disclosure are not limited by the specific embodiments disclosed below.
[0058] In the description of the embodiments of the present disclosure, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "perpendicular", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the embodiments of the present disclosure.
[0059] In the embodiments of the present disclosure, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, a first feature being "above," "above," or "above" a second feature may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. A first feature being "below," "below," or "below" a second feature may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.
[0060] Furthermore, the terms "first," "second," "third," and so on are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature designated "first" or "second" may explicitly or implicitly include at least one of such features. For example, a first valve may also be referred to as a second valve, and a second valve may also be referred to as a first valve. In the description of the present invention, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.
[0061] In the embodiments of the present disclosure, unless otherwise clearly specified and limited, the terms "connected", "connection" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a flexible connection, or a rigid connection along at least one direction; it can be a mechanical connection, or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or directly connected with the presence of an intermediate medium, or it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. The terms "install", "set", "fix" and the like can be broadly understood as connection. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to the specific circumstances.
[0062] refer to Figure 1 , Figure 1 The present invention relates to the field of single crystal silicon solar cell technology.
[0063] The present disclosure provides a silicon wafer texturing apparatus 100, comprising a first tank body 1, a second tank body 2, a third tank body 3, a regulating device 4, an alkaline liquid supply pipe 5, a hydrogen peroxide supply pipe 6, a first valve 7, and a second valve 8. For example, the alkaline liquid supply pipe 5 supplies alkaline liquid to the first tank body 1, the second tank body 2, and the third tank body 3. The hydrogen peroxide supply pipe 6 supplies hydrogen peroxide to the first tank body 1, the second tank body 2, and the third tank body 3.
[0064] The alkaline liquid supply pipe 5 is connected to the first tank body 1, the alkaline liquid supply pipe 5 is connected to the second tank body 2, and the alkaline liquid supply pipe 5 is connected to the third tank body 3 via a regulating device 4. The regulating device 4 is used to control the connection between the alkaline liquid supply pipe 5 and the third tank body 3. For example, when the regulating device 4 is turned on, the alkaline liquid supply pipe 5 supplies alkaline liquid to the third tank body 3. When the regulating device 4 is turned off, the alkaline liquid supply pipe 5 stops supplying alkaline liquid to the third tank body 3.
[0065] The hydrogen peroxide supply pipe 6 is connected to the first tank body 1 via a regulating device 4. The hydrogen peroxide supply pipe 6 is connected to the second tank body 2 via a second valve 8. The hydrogen peroxide supply pipe 6 is connected to the third tank body 3 via a first valve 7. The regulating device 4 is used to control the flow of hydrogen peroxide between the hydrogen peroxide supply pipe 6 and the first tank body 1. For example, when the regulating device 4 is open, the hydrogen peroxide supply pipe 6 flows into the first tank body 1. When the regulating device 4 is closed, the hydrogen peroxide supply pipe 6 stops flowing into the first tank body 1.
[0066] The first valve 7 is used to control the flow of hydrogen peroxide between the hydrogen peroxide supply pipe 6 and the third tank 3. For example, when the first valve 7 is open, the hydrogen peroxide supply pipe 6 flows into the third tank 3. When the regulating device 4 is closed, the hydrogen peroxide supply pipe 6 stops flowing into the third tank 3.
[0067] Second valve 8 is used to control the flow of hydrogen peroxide between hydrogen peroxide supply pipe 6 and second tank 2. For example, when first valve 7 is open, hydrogen peroxide supply pipe 6 flows into second tank 2. When regulating device 4 is closed, hydrogen peroxide supply pipe 6 stops flowing into second tank 2.
[0068] In the silicon wafer texturing equipment 100 provided in the embodiment of the present disclosure, the regulating device 4 controls the on-off connection between the hydrogen peroxide liquid supply pipe 6 and the first tank body 1, so that the first tank body 1 can switch between the rough polishing process and the pre-cleaning process. The second valve 8 controls the on-off connection between the hydrogen peroxide liquid supply pipe 6 and the second tank body 2, so that the second tank body 2 can switch between the rough polishing process and the pre-cleaning process. The regulating device 4 controls the on-off connection between the alkaline liquid supply pipe 5 and the third tank body 3, and the first valve 7 controls the on-off connection between the hydrogen peroxide liquid supply pipe 6 and the third tank body 3, so that the third tank body 3 can switch between the water washing process, the rough polishing process and the pre-cleaning process.
[0069] The silicon wafer texturing equipment 100 provided in the embodiment of the present disclosure can use different texturing processes to process silicon wafers of different thicknesses and different degrees of contamination, thereby achieving improvement in at least one aspect of the output, efficiency and yield of the silicon wafer production line, which is conducive to maximizing the output, efficiency and yield of the silicon wafer production line.
[0070] Exemplarily, the liquid provided by the alkaline liquid supply pipe 5 is a sodium hydroxide solution.
[0071] Illustratively, the alkaline liquid supply pipe 5 includes a first alkaline liquid supply pipe 51, a second alkaline liquid supply pipe 52, and a third alkaline liquid supply pipe 53. The first alkaline liquid supply pipe is connected to the first tank body 1, the second alkaline liquid supply pipe is connected to the second tank body 2, and the third alkaline liquid supply pipe is connected to the third tank body 3. The regulating device 4 is disposed on the third alkaline liquid supply pipe 53.
[0072] Illustratively, the hydrogen peroxide supply pipe 6 includes a first hydrogen peroxide supply pipe 61 and a second hydrogen peroxide supply pipe 62. The first hydrogen peroxide supply pipe 61 is connected to the first tank body 1, and the regulating device 4 is disposed on the first hydrogen peroxide supply pipe 61. The second hydrogen peroxide supply pipe 62 includes a first branch pipe 621 and a second branch pipe 622. The first branch pipe 621 is connected to the third tank body 3, and the first valve 7 is disposed on the first branch pipe 621. The second branch pipe 622 is connected to the second tank body 2, and the second valve 8 is disposed on the second branch pipe 622.
[0073] Exemplarily, the shape and size of the first trough body 1, the shape and size of the second trough body 2, and the shape and size of the third trough body 3 are the same. In other embodiments, the shape and size of the first trough body 1, the shape and size of the second trough body 2, and the shape and size of the third trough body 3 may be different.
[0074] Reference again Figure 1 In some embodiments, the regulating device 4 includes a regulating valve 41, a third valve 42, and a fourth valve 43. The hydrogen peroxide supply pipe 6 is connected to the first tank 1 through the regulating valve 41 and the third valve 42 in sequence; the third valve 42 is used to control the flow between the regulating valve 41 and the first tank 1. The alkaline liquid supply pipe 5 is connected to the third tank 3 through the regulating valve 41 and the fourth valve 43 in sequence; the fourth valve 43 is used to control the flow between the regulating valve 41 and the third tank 3. The regulating valve 41 is used to control the flow rate.
[0075] With this arrangement, the regulating valve 41 can precisely control the flow of hydrogen peroxide entering the first tank 1 and the flow of alkaline liquid entering the third tank 3. Closing the third valve 42 can reduce the flow of alkaline liquid into the hydrogen peroxide supply pipe 6, and closing the fourth valve 43 can reduce the flow of hydrogen peroxide into the alkaline liquid supply pipe 5.
[0076] Exemplarily, the regulating valve 41 is used to control the flow rate of the added alkaline liquid and hydrogen peroxide.
[0077] Exemplarily, the regulating valve 41 simultaneously controls the flow rates of the first hydrogen peroxide supply pipe 61 and the third alkaline liquid supply pipe 53. Along the liquid flow direction, a third valve 42 is provided in the portion of the first hydrogen peroxide supply pipe 61 between the regulating valve 41 and the first tank 1, and a fourth valve 43 is provided in the portion of the third dual alkaline liquid supply pipe 5 between the regulating valve 41 and the third tank 3.
[0078] Exemplarily, when the regulating valve 41 is in the connected state, the third valve 42 is in the disconnected state, and the fourth valve 43 is in the connected state.
[0079] Exemplarily, when the regulating valve 41 is in the connected state, the fourth valve 43 is in the disconnected state, and the third valve 42 is in the connected state.
[0080] For example, the regulating valve 41 , the third valve 42 , and the fourth valve 43 may all be in an open state.
[0081] Reference again Figure 1 In some embodiments, the regulating device 4 further includes a fifth valve 44 and a sixth valve 45. The hydrogen peroxide supply pipe 6 is connected to the regulating valve 41 via the fifth valve 44, which is used to control the flow of air between the hydrogen peroxide supply pipe 6 and the regulating valve 41. The alkaline liquid supply pipe 5 is connected to the regulating valve 41 via the sixth valve 45, which is used to control the flow of air between the alkaline liquid supply pipe 5 and the regulating valve 41.
[0082] With this arrangement, when the third valve 42 and the fifth valve 44 are closed simultaneously, the alkaline liquid flows through the regulating device 4 in the alkaline liquid supply pipe 5; and when the fourth valve 43 and the sixth valve 45 are closed simultaneously, the hydrogen peroxide flows through the regulating device 4 in the hydrogen peroxide supply pipe 6, thereby ensuring the accuracy of liquid flow addition.
[0083] For example, along the liquid flow direction, the first hydrogen peroxide supply pipe 61 is sequentially provided with a fifth valve 44, a regulating valve 41, and a third valve 42. The third alkaline liquid supply pipe 53 is sequentially provided with a sixth valve 45, a regulating valve 41, and a fourth valve 43.
[0084] Illustratively, when the regulating valve 41 is in the connected state, the fourth valve 43 and the sixth valve 45 are in the disconnected state, and the third valve 42 and the fifth valve 44 are in the connected state.
[0085] Illustratively, when the regulating valve 41 is in the connected state, the third valve 42 and the fifth valve 44 are in the disconnected state, and the fourth valve 43 and the sixth valve 45 are in the connected state.
[0086] Illustratively, the regulating valve 41 , the third valve 42 , the fourth valve 43 , the fifth valve 44 and the sixth valve 45 may all be in an open state.
[0087] Reference again Figure 1In some embodiments, the silicon wafer texturing apparatus 100 further includes a hydrogen peroxide tank 9, through which the third valve 42 is connected to the first tank 1. The first valve 7, the second valve 8, the third valve 42, the fourth valve 43, the fifth valve 44, and the sixth valve 45 are all manually controlled valves, and the regulating valve 41 is an electrically controlled valve.
[0088] The provision of the hydrogen peroxide tank 9 facilitates the provision of hydrogen peroxide to the first tank body 1 , thereby increasing the silicon wafer processing process of the first tank body 1 and improving the output and efficiency of silicon wafer production.
[0089] Manually controlled valves are quick and easy to operate, making it easy to add different liquids to the first tank 1, the second tank 2, and the third tank 3, facilitating rapid switching of silicon wafer processing processes. The electrically controlled regulating valve 41 improves the accuracy and precision of liquid addition.
[0090] Exemplarily, the silicon wafer texturing equipment 100 further includes a first sodium hydroxide tank 11 , a second sodium hydroxide tank 21 and a third sodium hydroxide tank 31 , and the hydrogen peroxide tank 9 includes a first hydrogen peroxide tank 91 and a second hydrogen peroxide tank 92 .
[0091] For example, the first alkaline liquid supply pipe 51 supplies sodium hydroxide to the first cell 1 via the first sodium hydroxide tank 11. The second alkaline liquid supply pipe 52 supplies sodium hydroxide to the second cell 2 via the second sodium hydroxide tank 21. The sixth valve 45, the regulating valve 41, and the fourth valve 43 control the connection between the third alkaline liquid supply pipe 53 and the third sodium hydroxide tank 31 to supply sodium hydroxide to the third cell 3. The fifth valve 44, the regulating valve 41, and the third valve 42 control the connection between the first hydrogen peroxide supply pipe 61 and the first hydrogen peroxide tank 91 to supply hydrogen peroxide to the first cell 1. The second hydrogen peroxide supply pipe 62 supplies hydrogen peroxide to the second hydrogen peroxide tank 92. The first valve 7 controls the connection between the first branch pipe 621 and the third cell 3 to supply hydrogen peroxide to the third cell 3. The second valve 8 controls the connection between the second branch pipe 622 and the second cell 2 to supply hydrogen peroxide to the second cell 2.
[0092] refer to Figure 2 For example, the fifth valve 44, the third valve 42, and the second valve 8 are disconnected, while the sixth valve 45, the regulating valve 41, the fourth valve 43, and the first valve 7 are connected. Sodium hydroxide enters the first tank 1 through the first alkaline liquid supply pipe 51 and the first sodium hydroxide tank 11. Sodium hydroxide enters the second tank 2 through the second alkaline liquid supply pipe 52 and the second sodium hydroxide tank 21. Sodium hydroxide enters the third tank 3 through the third alkaline liquid supply pipe 53, the sixth valve 45, the regulating valve 41, the fourth valve 43, and the third sodium hydroxide tank 31. Meanwhile, hydrogen peroxide enters the third tank 3 through the second hydrogen peroxide supply pipe 62, the second hydrogen peroxide tank 92, the first branch pipe 621, and the first valve 7.
[0093] refer to Figure 3 For example, the fifth valve 44, regulating valve 41, third valve 42, and second valve 8 are in a connected state, while the sixth valve 45, fourth valve 43, and first valve 7 are in a disconnected state. Sodium hydroxide enters the first tank 1 through the first alkaline liquid supply pipe 51 and the first sodium hydroxide tank 11, while hydrogen peroxide enters the first tank 1 through the first hydrogen peroxide supply pipe 61, the fifth valve 44, regulating valve 41, third valve 42, and the first hydrogen peroxide tank 91. Sodium hydroxide enters the second tank 2 through the second alkaline liquid supply pipe 52 and the second sodium hydroxide tank 21, while hydrogen peroxide enters the second tank 2 through the second hydrogen peroxide supply pipe 62, the second hydrogen peroxide tank 92, the second branch pipe 622, and the second valve 8.
[0094] refer to Figures 4 to 7 The embodiment of the present disclosure provides a texturing process 1000, comprising step S101: using the above-mentioned silicon wafer texturing equipment 100 to perform texturing pretreatment on the silicon wafer placed in the flower basket.
[0095] Due to the use of the silicon wafer texturing equipment 100 provided by the embodiment of the present disclosure, silicon wafers of different thicknesses and different contamination levels can be processed, forming a plurality of different texturing processes.
[0096] refer to Figure 4 In some embodiments, the texturing process 1000 further includes steps S102 to S108:
[0097] Step S102: texturing the silicon wafer that has undergone texturing pretreatment.
[0098] Step S103: washing the textured silicon wafer with water.
[0099] Step S104: alkaline-washing the washed silicon wafer.
[0100] Step S105: washing the alkali-washed silicon wafer with water for the second time.
[0101] Step S106: acid-washing the silicon wafer after the second water washing.
[0102] Step S107: washing the acid-washed silicon wafer with water three times.
[0103] Step S108: slowly pulling the silicon wafer that has been washed three times.
[0104] Step S109: drying the slowly pulled silicon wafer.
[0105] Such a setting can cope with silicon wafers of different thicknesses and different degrees of contamination, can quickly realize the switching of various texturing processes 1000, and is compatible with the cleaning of flower baskets, thereby achieving an improvement in at least one aspect of the output, efficiency and yield of the silicon wafer production line, which is conducive to maximizing the output, efficiency and yield of the silicon wafer production line.
[0106] It is understandable that the steps of the texturing process 1000 are performed sequentially from step 101 to step S108, and the order of the steps cannot be disrupted.
[0107] refer to Figure 5 In some embodiments, the texturing pretreatment process adopts a double-tank rough polishing process plus a single-tank pre-cleaning process, and the steps of the texturing pretreatment include:
[0108] The first batch of silicon wafers are placed in the first tank body 1 for a first rough polishing process, wherein the control and adjustment device 4 disconnects the hydrogen peroxide liquid supply pipe 6 from the first tank body 1;
[0109] The second batch of silicon wafers is placed in the second tank body 2 for a second rough polishing process, wherein the second valve 8 is controlled to disconnect the hydrogen peroxide supply pipe 6 from the second tank body 2;
[0110] The first batch of silicon wafers that have undergone the first rough polishing process are placed in the third tank body 3 for a pre-cleaning process, wherein the control regulating device 4 is connected to the alkaline liquid supply pipe 5 and the third tank body 3, and the first valve 7 is controlled to connect the hydrogen peroxide liquid supply pipe 6 and the third tank body 3; and
[0111] The second batch of silicon wafers that have undergone the second rough polishing process are placed in the third tank body 3 for a pre-cleaning process, wherein the control and adjustment device 4 connects the alkaline liquid supply pipe 5 with the third tank body 3, and controls the first valve 7 to connect the hydrogen peroxide supply pipe 6 with the third tank body 3.
[0112] With this configuration, the silicon wafer texturing apparatus 100 has a strong cleaning capability and can pre-treat thicker and more contaminated silicon wafers. The first tank body 1 and the second tank body 2 can simultaneously perform a rough polishing process, thereby increasing the output and efficiency of silicon wafer texturing.
[0113] For example, the first rough polishing process and the second rough polishing process can be performed on different batches of silicon wafers at the same time. For example, the first rough polishing process and the second rough polishing process can be performed at different times.
[0114] For example, the first batch of silicon wafers that have undergone the first rough polishing process and the second batch of silicon wafers that have undergone the second rough polishing process can be placed in the third tank 3 for pre-cleaning at the same time. For example, the first batch of silicon wafers that have undergone the first rough polishing process and the second batch of silicon wafers that have undergone the second rough polishing process can also be placed in the third tank 3 in batches.
[0115] refer to Figure 5For example, the process and specific operations of the texturing process using the texturing pretreatment process step are as follows:
[0116] Step S101: Rough polishing (first tank body 1 and second tank body 2): process time 100-200s, temperature 60-80°C; initial batch texturing liquid parameters: NaOH solution 6-8L, pure water 300-380L; each basket adding liquid parameters: NaOH solution 550-650ml, pure water 5000-7000mL.
[0117] Step S101: Pre-cleaning (second tank body 2): process time 100~200s, temperature 60~80℃; initial batch of texturing liquid parameters: NaOH solution 500~900ml, hydrogen peroxide 4000~6000ml, cleaning agent 1000~3000ml, pure water 300~380L; each basket adding liquid parameters: NaOH solution 30~60ml, hydrogen peroxide 300~500ml, cleaning agent 10~30ml, pure water 1000~3000mL.
[0118] Step S101: Water washing: process time 50 to 200 seconds.
[0119] Step S102: Texturing: process time 270-570s, temperature 70-90°C; initial batch texturing liquid parameters: NaOH solution 2.4-4.4L, additive 1000-3000ml, pure water 300-380L; each basket of replenishing liquid parameters: NaOH solution 290-590ml, additive 110-310ml, pure water 8-12L.
[0120] Step S103: water washing: process time 50 to 200 seconds.
[0121] Step S104: process time 50-200s, temperature 50-65℃; initial batch texturing liquid parameters: NaOH solution 500-900ml, hydrogen peroxide 4000-6000ml, detergent 1000-3000ml, pure water 300-380L; each basket adding liquid parameters: NaOH solution 10-50ml, hydrogen peroxide 100-300ml, detergent 10-30ml, pure water 1000-3000mL.
[0122] Step S105: Secondary water washing: process time 50 to 200 seconds.
[0123] Step S106: pickling: process time 50~200s, initial batch texturing liquid parameters: hydrofluoric acid 10~20L, hydrochloric acid 4000~6000ml, pickling agent 1000~3000ml, pure water 300~380L; each basket adding liquid parameters: hydrofluoric acid 50~200ml, hydrochloric acid 30~100ml, pickling agent 20~100ml, pure water 500~3000mL.
[0124] Step S107: three water washes: process time 50 to 200 seconds.
[0125] Step S108: slow pulling: process time 10-200s, temperature 50-90°C.
[0126] Step S109: Drying: process time 300-600s, temperature 50-100°C.
[0127] The mass fraction of sodium hydroxide is 40-48%, the mass fraction of hydrofluoric acid is 45-50%, and the mass fraction of hydrochloric acid is 36-38%. The pickling agent enhances the pickling ability to remove metal ions and reduces acid consumption. The additive enhances the pyramid-like textured surface of the silicon wafer. The cleaning agent enhances the alkaline cleaning ability and reduces alkaline consumption.
[0128] refer to Figure 6 In some embodiments, the texturing pretreatment process adopts a single tank pre-cleaning process step. The steps of the texturing pretreatment are as follows:
[0129] The silicon wafer is placed in the third tank body 3 for pre-cleaning, wherein the control regulating device 4 connects the alkaline liquid supply pipe 5 with the third tank body 3 , and controls the first valve 7 to connect the hydrogen peroxide supply pipe 6 with the third tank body 3 .
[0130] With this configuration, the cleaning ability of the silicon wafer texturing equipment 100 is relatively weak, and it can pre-treat silicon wafers with smaller thickness and less contamination, reducing the consumption of chemicals, reducing the weight loss of silicon wafers, and preventing the silicon wafers from being too thin or having too high a warp, which increases the difficulty of the process production process.
[0131] refer to Figure 6 For example, the process and specific operations of the texturing process 1000 using the texturing pretreatment process step are as follows:
[0132] Step S101: Pre-cleaning (third tank 3): process time 100~200s, temperature 60~80℃; initial batch of texturing liquid parameters: NaOH solution 500~900ml, hydrogen peroxide 4000~6000ml, cleaning agent 1000~3000ml, pure water 300~380L; each basket adding liquid parameters: NaOH solution 30~60ml, hydrogen peroxide 300~500ml, cleaning agent 10~30ml, pure water 1000~3000mL.
[0133] Step S101: Water washing: process time 50 to 200 seconds.
[0134] Step S102: Texturing: process time 300-600s, temperature 70-90°C; initial batch texturing liquid parameters: NaOH solution 3-5L, additive 1000-3000ml, pure water 300-380L; each basket of replenishing liquid parameters: NaOH solution 300-600ml, additive 100-300ml, pure water 8-12L.
[0135] Step S103: water washing: process time 50 to 200 seconds.
[0136] Step S104: Alkali washing: process time 50-200s, temperature 50-65℃; initial batch of texturing liquid parameters: NaOH solution 500-900ml, hydrogen peroxide 4000-6000ml, detergent 1000-3000ml, pure water 300-380L; each basket of replenishing liquid parameters: NaOH solution 10-50ml, hydrogen peroxide 100-300ml, detergent 10-30ml, pure water 1000-3000mL.
[0137] Step S105: Secondary water washing: process time 50 to 200 seconds.
[0138] Step S106: pickling: process time 50~200s, initial batch texturing liquid parameters: hydrofluoric acid 10~20L, hydrochloric acid 4000~6000ml, pickling agent 1000~3000ml, pure water 300~380L; each basket adding liquid parameters: hydrofluoric acid 50~200ml, hydrochloric acid 30~100ml, pickling agent 20~100ml, pure water 500~3000mL.
[0139] Step S107: three water washes: process time 50 to 200 seconds.
[0140] Step S108: slow pulling: process time 10-200s, temperature 50-90°C.
[0141] Step S109: Drying: process time 300-600s, temperature 50-100°C.
[0142] In some embodiments, the texturing process 1000 further includes step S110:
[0143] Step S110: placing the flower basket into the first tank body 1 for cleaning, wherein the control regulating device 4 disconnects the hydrogen peroxide supply pipe 6 from the first tank body 1; or
[0144] Step S110 : placing the flower basket into the second tank body 2 for cleaning, wherein the second valve 8 is controlled to disconnect the hydrogen peroxide supply pipe 6 from the second tank body 2 .
[0145] With this arrangement, the silicon wafers can be pre-treated for texturing while the flower baskets can be cleaned at the same time, which reduces the consumption of chemicals and improves the production efficiency of silicon wafer texturing.
[0146] refer to Figure 7 In some embodiments, the texturing pretreatment process adopts a double-tank pre-cleaning process step and a single-tank water washing process step, and the steps of the texturing pretreatment process include:
[0147] The first batch of silicon wafers are placed in the first tank body 1 for a first pre-cleaning process, wherein the control and adjustment device 4 is connected to the hydrogen peroxide liquid supply pipe 6 and the first tank body 1;
[0148] The second batch of silicon wafers is placed in the second tank body 2 for a second pre-cleaning process, wherein the second valve 8 is controlled to connect the hydrogen peroxide liquid supply pipe 6 with the second tank body 2;
[0149] The first batch of silicon wafers that have undergone the first pre-cleaning process are placed in the third tank 3 for a water washing process. The control regulating device 4 disconnects the alkaline liquid supply pipe 5 from the third tank 3, and the first valve 7 disconnects the hydrogen peroxide supply pipe 6 from the third tank 3.
[0150] The second batch of silicon wafers that have undergone the second pre-cleaning process are placed in the third tank body 3 for a water washing process, wherein the control and adjustment device 4 disconnects the alkaline liquid supply pipe 5 from the third tank body 3, and controls the first valve 7 to disconnect the hydrogen peroxide supply pipe 6 from the third tank body 3.
[0151] This setting can handle silicon wafers with a lot of contamination, and improve the texturing and cleaning capabilities while ensuring low weight loss.
[0152] Exemplarily, the first pre-cleaning process and the second pre-cleaning process can be performed on different batches of silicon wafers at the same time. Exemplarily, the first pre-cleaning process and the second pre-cleaning process can be performed at different times.
[0153] For example, the first batch of silicon wafers that have undergone the first pre-cleaning process and the second batch of silicon wafers that have undergone the second pre-cleaning process can be placed in the third tank 3 for the water washing process at the same time. For example, the first batch of silicon wafers that have undergone the first pre-cleaning process and the second batch of silicon wafers that have undergone the second pre-cleaning process can also be placed in the third tank 3 in batches.
[0154] refer to Figure 6 For example, the process and specific operations of the texturing process 1000 using the texturing pretreatment process step are as follows:
[0155] Step S101: Pre-cleaning (first tank body 1 and second tank body 2): process time 200~400s, temperature 60~80℃; initial batch of texturing liquid parameters: NaOH solution 500~900ml, hydrogen peroxide 4500~6500ml, cleaning agent 1000~3000ml, pure water 300~380L; each basket adding liquid parameters: NaOH solution 35~65ml, hydrogen peroxide 100~300ml, cleaning agent 5~25ml, pure water 1000~3000mL.
[0156] Step S101: water washing (third tank 3): process time 10 to 200 seconds.
[0157] Step S102: water washing: process time 50 to 200 seconds.
[0158] Step S102: Texturing: process time 300-600s, temperature 70-90°C; initial batch texturing liquid parameters: NaOH solution 3-5L, additive 1000-3000ml, pure water 300-380L; each basket of replenishing liquid parameters: NaOH solution 300-600ml, additive 100-300ml, pure water 8-12L.
[0159] Step S103: water washing: process time 50 to 200 seconds.
[0160] Step S104: Alkali washing: process time 50-200s, temperature 50-65℃; initial batch of texturing liquid parameters: NaOH solution 500-900ml, hydrogen peroxide 4000-6000ml, detergent 1000-3000ml, pure water 300-380L; each basket of replenishing liquid parameters: NaOH solution 10-50ml, hydrogen peroxide 100-300ml, detergent 10-30ml, pure water 1000-3000mL.
[0161] Step S105: Secondary water washing: process time 50 to 200 seconds.
[0162] Step S106: pickling: process time 50~200s, initial batch texturing liquid parameters: hydrofluoric acid 10~20L, hydrochloric acid 4000~6000ml, pickling agent 1000~3000ml, pure water 300~380L; each basket adding liquid parameters: hydrofluoric acid 50~200ml, hydrochloric acid 30~100ml, pickling agent 20~100ml, pure water 500~3000mL.
[0163] Step S107: water washing: process time 50 to 200 seconds.
[0164] Step S108: slow pulling: process time 10-200s, temperature 50-90°C.
[0165] Step S109: Drying: process time 300-600s, temperature 50-100°C.
[0166] For example, an M10 silicon wafer of 182 mm*182 mm was selected and texturized using the silicon wafer texturizing apparatus 100 using the above three different texturizing pretreatment process steps. Table 1 shows the experimental grouping of original silicon wafers of different thicknesses and different contamination levels.
[0167] Table 1
[0168]
[0169] Example 1:
[0170] The original silicon wafers of groups A / B / C are respectively put into the silicon wafer texturing equipment 100. The texturing pretreatment adopts a double-tank rough polishing process and a single-tank pre-cleaning process. The process rework rate, texturing debris rate and finished product rate are tracked.
[0171] Example 2:
[0172] The D / E group of original silicon wafers are respectively put into the silicon wafer texturing equipment 100. The texturing adopts a double-tank rough polishing process and a single-tank pre-cleaning process. The process rework rate, texturing debris rate and finished product rate are tracked.
[0173] Example 3:
[0174] The original silicon wafers of groups A / B / C are respectively put into the silicon wafer texturing equipment 100. The texturing adopts a single tank pre-cleaning process, and the process rework rate, texturing debris rate and finished product rate are tracked.
[0175] Example 4:
[0176] The original silicon wafers of groups B and C were put into production lines respectively. The texturing process adopted a double-tank pre-cleaning process and a single-tank water washing process. The process rework rate, texturing fragmentation rate and finished product rate were tracked.
[0177] The process rework rate, texturing debris rate and finished product rate of the four embodiments were tracked, and the results are shown in Table 2:
[0178] Table 2
[0179]
[0180] The double-tank rough polishing process and the single-tank pre-cleaning process of the first embodiment enable silicon wafers with different degrees of contamination to be cleaned.
[0181] Compared with Example 1, the thickness of the silicon wafers in the experimental group selected for Example 2 is all 160 μm. Under the conditions of the double-tank pre-cleaning process and the single-tank water washing process, the fragmentation rate, rework rate and finished product rate of silicon wafers with different contamination degrees are better.
[0182] Compared with Example 1, Example 3 has better performance in terms of fragmentation rate, rework rate and finished product rate for silicon wafers with better contamination conditions under the single-tank pre-cleaning process conditions.
[0183] The BC experimental group of Example 4 is the same as that of Example 3, but under the conditions of a double-tank pre-cleaning process and a single-tank water washing process, compared with Experiment 3, the fragmentation rate is slightly improved, and the rework rate and finished product rate are significantly improved.
[0184] Comparing the four embodiments, when the silicon wafer thickness is above 160um, the double-tank rough polishing process and the single-tank pre-cleaning process can be preferentially selected; when the silicon wafer thickness is around 150um, the single-tank pre-cleaning process or the double-tank pre-cleaning process and the single-tank water washing process can be selected, but the double-tank pre-cleaning process and the single-tank water washing process cannot clean the flower basket.
[0185] The present invention can realize rapid switching between three modes: double-tank rough polishing process and single-tank pre-cleaning process, single-tank pre-cleaning process, double-tank pre-cleaning process and single-tank water washing process for original silicon wafers of different thicknesses and different degrees of contamination, and is also compatible with cleaning baskets.
[0186] The various technical features of the embodiments disclosed above can be combined arbitrarily. To make the description concise, not all possible combinations of the various technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0187] In the embodiments disclosed above, unless otherwise expressly specified and limited, the order of execution of the steps is not limited. For example, the steps may be executed in parallel or in a different order. The sub-steps of each step may also be executed in an interleaved manner. The above-mentioned various forms of processes may be used, and steps may be reordered, added, or deleted. As long as the desired results of the technical solutions provided in the embodiments of the present disclosure can be achieved, this document does not impose any restrictions thereon.
[0188] The embodiments disclosed above merely represent several implementation methods of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be based on the appended claims.
Claims
1. Silicon wafer texturing equipment, characterized in that: include: A first tank body, a second tank body, a third tank body, a regulating device, an alkaline liquid supply pipe, a hydrogen peroxide solution supply pipe, a first valve, and a second valve; The alkaline liquid supply pipe is connected to the first tank body and the second tank body, and the alkaline liquid supply pipe is connected to the third tank body through the regulating device; The hydrogen peroxide supply pipe is connected to the first tank body through the regulating device, the hydrogen peroxide supply pipe is connected to the second tank body through the second valve, and the hydrogen peroxide supply pipe is connected to the third tank body through the first valve; The regulating device is used to control the connection and disconnection between the alkaline liquid supply pipe and the third tank body, and the regulating device is used to control the connection and disconnection between the hydrogen peroxide supply pipe and the first tank body; The first valve is used to control the connection between the hydrogen peroxide supply pipe and the third tank; The second valve is used to control the connection between the hydrogen peroxide supply pipe and the second tank body.
2. The silicon wafer texturing equipment according to claim 1, characterized in that: The regulating device includes a regulating valve, a third valve and a fourth valve; The hydrogen peroxide supply pipe is connected to the first tank body through the regulating valve and the third valve in sequence; the third valve is used to control the connection and disconnection between the regulating valve and the first tank body; The alkaline liquid supply pipe is connected to the third tank body through the regulating valve and the fourth valve in sequence; the fourth valve is used to control the connection and disconnection between the regulating valve and the third tank body; The regulating valve is used to control the flow rate.
3. The silicon wafer texturing equipment according to claim 2, characterized in that: The regulating device further includes a fifth valve and a sixth valve; The hydrogen peroxide supply pipe is connected to the regulating valve through the fifth valve, and the fifth valve is used to control the connection between the hydrogen peroxide supply pipe and the regulating valve; The alkaline liquid supply pipe is connected to the regulating valve through the sixth valve, and the sixth valve is used to control the connection and disconnection between the alkaline liquid supply pipe and the regulating valve.
4. The silicon wafer texturing equipment according to claim 3, characterized in that: It also includes a hydrogen peroxide tank, and the third valve is connected to the first tank through the hydrogen peroxide tank; The first valve, the second valve, the third valve, the fourth valve, the fifth valve and the sixth valve are all manually controlled valves, and the regulating valve is an electrically controlled valve. 5.Texturing process, characterized in that: The silicon wafers placed in the flower basket are pre-treated by texturing using the silicon wafer texturing equipment according to any one of claims 1 to 4.
6. The texturing process according to claim 5, characterized in that: The steps of the texturing pretreatment include: placing a first batch of silicon wafers into the first tank body for a first rough polishing process, wherein the regulating device is controlled to disconnect the hydrogen peroxide supply pipe from the first tank body; placing a second batch of silicon wafers into the second tank body for a second rough polishing process, wherein the second valve is controlled to disconnect the hydrogen peroxide supply pipe from the second tank body; placing the first batch of silicon wafers that have undergone the first rough polishing process into the third tank body for a pre-cleaning process, wherein the regulating device is controlled to connect the alkaline liquid supply pipe with the third tank body, and the first valve is controlled to connect the hydrogen peroxide solution supply pipe with the third tank body; and The second batch of silicon wafers that have undergone the second rough polishing process are placed in the third tank body for a pre-cleaning process, wherein the regulating device is controlled to connect the alkaline liquid supply pipe with the third tank body, and the first valve is controlled to connect the hydrogen peroxide supply pipe with the third tank body.
7. The texturing process according to claim 5, characterized in that: The steps of the texturing pretreatment include: The silicon wafer is placed in the third tank body for a pre-cleaning process, wherein the regulating device is controlled to connect the alkaline liquid supply pipe with the third tank body, and the first valve is controlled to connect the hydrogen peroxide solution supply pipe with the third tank body.
8. The texturing process according to any one of claims 6 to 7, characterized in that: The texturing process further comprises: placing the flower basket into the first tank body for cleaning, wherein the regulating device is controlled to disconnect the hydrogen peroxide supply pipe from the first tank body; or The flower basket is placed in the second tank body for cleaning, wherein the second valve is controlled to disconnect the hydrogen peroxide supply pipe from the second tank body.
9. The texturing process according to claim 5, characterized in that: The steps of the texturing pretreatment include: Placing a first batch of silicon wafers into the first tank body for a first pre-cleaning process, wherein the regulating device is controlled to connect the hydrogen peroxide supply pipe with the first tank body; placing a second batch of silicon wafers into the second tank body for a second pre-cleaning process, wherein the second valve is controlled to connect the hydrogen peroxide supply pipe with the second tank body; placing the first batch of silicon wafers that have undergone the first pre-cleaning process into the third tank body for a water washing process, wherein the regulating device is controlled to disconnect the alkaline liquid supply pipe from the third tank body, and the first valve is controlled to disconnect the hydrogen peroxide solution supply pipe from the third tank body; The second batch of silicon wafers that have undergone the second pre-cleaning process are placed in the third tank body for a water washing process, wherein the regulating device is controlled to disconnect the alkaline liquid supply pipe from the third tank body, and the first valve is controlled to disconnect the hydrogen peroxide supply pipe from the third tank body.
10. The texturing process according to claim 5, characterized in that: Also includes: Performing texturing on the silicon wafer that has undergone the texturing pretreatment; washing the silicon wafer after the texturing process; performing alkali washing on the silicon wafer after the water washing; washing the silicon wafer after the alkali washing for the second time; acid-washing the silicon wafer after the secondary water washing; Washing the acid-washed silicon wafer three times with water; Slowly pulling the silicon wafer after the three water washings; The silicon wafer after the slow pulling is dried.