Gas distribution device and thin film deposition equipment
By installing a gas splitting device at the bottom of the reaction chamber of the semiconductor equipment, the problem of purging literacy areas at the bottom of the cavity is solved, effective cleaning of each position of the cavity is achieved, and product quality and the stability of the reaction environment are improved.
Patent Information
- Application Number
- CN202511002117.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-18
- Publication Date
- 2025-08-29
AI Technical Summary
There is a purging literacy area at the bottom of the cavity of the semiconductor process equipment, which leads to the accumulation and aging of the film, affecting product quality and reaction environment stability.
The air splitter is installed at the bottom of the reaction chamber of the thin film deposition equipment. Through the intake passage and multiple air outlets, the purge gas is evenly distributed, avoiding the purge literacy area, and ensuring effective cleaning of various locations of the chamber.
Improves product quality and stability of reaction environment, prevents film thickening and dust generation, ensures cleaning effect, and improves production efficiency.
Smart Images
Figure CN120555993A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor production, and in particular to a gas separation device and thin film deposition equipment. Background Art
[0002] During thin film deposition in semiconductor process equipment, the deposition and treatment of thin films at the bottom of the chamber remain a significant challenge for stable process operation. For example, in the ACHM process of CVD equipment, a certain thickness of thin film deposits form at the bottom of the chamber during the reaction. However, existing cleaning processes have limited etching range and intensity, making it impossible to completely remove this bottom film, resulting in a continuous accumulation of thin film.
[0003] Similarly, the bottom purge design of PECVD equipment has significant limitations: the purge gas is ejected directly upward from the bellows. This is restricted by the chamber structure and gas flow direction, creating a purge blind spot at the bottom of the chamber. This prevents the effective removal of deposited thin films, leading to the gradual thickening and degradation of the films over long-term operation.
[0004] As the number of process cycles increases, this residual bottom film can peel off due to stress changes or airflow disturbances, forming fine dust. This dust floats inside the chamber and easily mixes into the newly deposited film, causing a decrease in the density and uniformity of the film formed on the wafer, affecting semiconductor product quality. Furthermore, dust adheres to the surface of chamber components and can alter the stability of the reaction environment, adversely affecting the repeatability and consistency of subsequent processes. Summary of the Invention
[0005] Embodiments of the present invention provide a gas separation device and a thin film deposition apparatus to solve the problems of reduced product quality and unstable reaction environment caused by a purge blind area at the bottom of a chamber.
[0006] The present invention provides a gas separation device installed at the bottom of a reaction chamber of a thin film deposition device, comprising:
[0007] a main body, the main body being provided with an air inlet channel and a first air outlet communicating with the air inlet channel, the air inlet channel extending from the lower surface of the main body to the upper surface, the first air outlet being provided on a side wall of the main body and opening toward the bottom of the reaction chamber;
[0008] The purge gas flows upward from the bottom end of the air inlet channel, part of it is purged toward the reaction chamber through the top end of the air inlet channel, and part of it is purged toward the bottom of the reaction chamber through the first air outlet.
[0009] In the gas separation device provided by the present invention, a plurality of the first gas outlet holes are provided, and the plurality of the first gas outlet holes are arranged on the side wall of the main body at intervals along the circumference of the main body.
[0010] In the gas separation device provided by the present invention, the main body is further provided with support ribs, which extend horizontally outward from the side walls of the main body and are stuck in the connection between the bottom wall of the reaction chamber and the pipeline.
[0011] In the air separation device provided by the present invention, a plurality of the support ribs are provided, and the plurality of the support ribs are spaced apart along the circumference of the main body, and each of the support ribs is located between two adjacent first air outlet holes.
[0012] In the air separation device provided by the present invention, the bottom end of the supporting rib and the bottom end of the first air outlet are located on the same horizontal plane.
[0013] In the gas separation device provided by the present invention, a plurality of second air outlet holes are provided at intervals on the top of the main body, and the plurality of second air outlet holes are arranged in a ring outside the port of the air inlet channel, and the second air outlet holes are connected to the air inlet channel.
[0014] In the gas separation device provided by the present invention, the plurality of second gas outlet holes are arranged in a row along the circumferential direction of the port of the gas inlet channel.
[0015] In the gas separation device provided by the present invention, the plurality of second gas outlet holes are arranged in rows and columns at intervals along the circumference of the port of the air inlet channel.
[0016] In the gas separation device provided by the present invention, the main body is a circular ring structure composed of at least two arc-shaped blocks.
[0017] The present invention also provides a thin film deposition device, which includes any of the gas separation devices described above.
[0018] The present application installs the gas separation device at the bottom of the reaction chamber, and the main body of the gas separation device is provided with an air inlet channel and a first air outlet. The purge gas flows into the air inlet channel from the bottom end of the air inlet channel and flows along the air inlet channel. The purge gas is guided to the middle and upper parts of the reaction chamber through the top end of the air inlet channel for purge. At the same time, the purge gas is guided to the bottom of the reaction chamber for purge through the first air outlet, avoiding the occurrence of a purge blind spot at the bottom of the reaction chamber, thereby ensuring that the purge gas can purge various positions of the reaction chamber, thereby improving the quality of the produced products and the stability of the reaction environment. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0020] Figure 1a-Figure 1d 1. The structural diagram of the gas separation device at various viewing angles in an embodiment of the present invention;
[0021] Figure 2a-2d 1 is a structural diagram of the gas separation device from different perspectives in another embodiment of the present invention.
[0022] The reference numerals in the figures are:
[0023] 10. Main body; 11. Air inlet channel; 12. First air outlet; 13. Support ribs; 14. Second air outlet; 15. Embedded portion. DETAILED DESCRIPTION
[0024] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. Now, in conjunction with the accompanying drawings, the preferred embodiments of the present invention will be described in detail.
[0025] Reference Figures 1a to 2d , which illustrates an embodiment of a gas separation device and a thin film deposition apparatus of the present invention. The gas separation device is installed at the bottom of a reaction chamber of the thin film deposition apparatus and comprises a main body 10, wherein the main body 10 is provided with an air inlet channel 11 and a first air outlet 12 connected to the air inlet channel 11. The air inlet channel 11 extends from the lower surface of the main body 10 to the upper surface. The first air outlet 12 is provided on the side wall of the main body 10 and opens toward the bottom of the reaction chamber. The purge gas flows upward from the bottom end of the air inlet channel 11, with part of the gas being purged toward the reaction chamber through the top end of the air inlet channel 11 and part of the gas being purged toward the bottom of the reaction chamber through the first air outlet 12.
[0026] Specifically, in semiconductor production equipment, thin film deposition equipment is one of the core equipment, which is used to coat wafers in a reaction chamber. During the reaction process, impurities such as thin films and reaction by-products will adhere to the walls of the reaction chamber, thereby affecting the reaction environment and, in turn, the coating quality. At this stage, impurities in the reaction chamber are cleaned through a cleaning process. The core goal of the cleaning process is to remove residual deposits (such as thin film debris, reaction by-products, particulate impurities, etc.) inside the equipment through physical or chemical methods to ensure process stability and film quality. In the cleaning process, a bellows is connected at the bottom of the reaction chamber and a purge gas is introduced into the bellows. The purge gas refers to an inert or reactive gas that is introduced at high speed into the target area (such as the cavity, pipeline, or component surface of the thin film deposition equipment) through specific equipment (such as a gas pipeline or nozzle). Its core function is to use the physical scouring force or chemical properties of the airflow to remove residual impurities, particles, volatile substances, or reaction by-products, so that the purge gas enters the interior of the reaction chamber and cleans the impurities on the wall of the reaction chamber. However, this purge method easily forms a purge blind area at the bottom of the reaction chamber, especially on the bottom wall of the reaction chamber, which is basically not purged. Therefore, an area not covered by the purge gas is formed at the bottom of the reaction chamber, resulting in the problem of film growth at the bottom of the reaction chamber, affecting the reaction environment and the coating quality.
[0027] In this embodiment, a gas separator is provided, which is installed at the bottom of the reaction chamber of the thin film deposition equipment. The gas separator in this embodiment is installed at the connection between the bellows and the reaction chamber, so as to divert the purge gas flowing toward the interior of the reaction chamber, so that the purge gas can be evenly blown to all corners of the interior of the reaction chamber, avoiding the phenomenon of purge blind spots at the bottom.
[0028] The gas separation device includes a main body 10, which is provided with an air inlet channel 11 and a first air outlet 12. The air inlet channel 11 runs through the lower surface of the main body 10 to the upper surface of the main body 10, thereby connecting the upper and lower ends of the main body 10, so that the purge gas can flow from the bottom end of the main body 10 along the air inlet channel 11 to the top end of the main body 10, and then flow toward the inside of the reaction chamber.
[0029] The first air outlet 12 is communicated with the air inlet channel 11. The first air outlet 12 is provided on the side wall of the main body 10, and the opening of the first air outlet 12 faces the bottom of the reaction chamber. Therefore, the purge gas can flow from the air inlet channel 11 to the first air outlet 12, and flow from the opening of the first air outlet 12 toward the bottom of the reaction chamber, thereby avoiding the phenomenon of a purge blind spot at the bottom of the reaction chamber.
[0030] When the cleaning process is started, the purge gas enters the inside of the air inlet channel 11 from the bottom end of the air inlet channel 11 and flows upward along the air inlet channel 11. Part of the purge gas flows through the top end of the air inlet channel 11 toward the middle and upper parts of the reaction chamber, thereby purging and cleaning the middle and upper parts of the reaction chamber to clean the impurities in the middle and upper parts of the reaction chamber; at the same time, another part of the purge gas flows along the air inlet channel 11 toward the first air outlet 12, and flows through the opening of the first air outlet 12 toward the bottom of the reaction chamber, thereby purging and cleaning the bottom of the reaction chamber to clean the impurities at the bottom of the reaction chamber.
[0031] Therefore, the present application installs the gas separation device at the bottom of the reaction chamber, and the main body 10 of the gas separation device is provided with an air inlet channel 11 and a first air outlet 12. The purge gas flows into the air inlet channel 11 from the bottom end of the air inlet channel 11 and flows along the air inlet channel 11. The purge gas is guided to the middle and upper parts of the reaction chamber through the top end of the air inlet channel 11 for purge, and at the same time, the purge gas is guided to the bottom of the reaction chamber for purge through the first air outlet 12, avoiding the occurrence of a purge blind spot at the bottom of the reaction chamber, thereby ensuring that the purge gas can purge various positions of the reaction chamber, thereby improving the quality of the produced products and the stability of the reaction environment.
[0032] In one embodiment, referring to Figure 1a 、 Figure 2c As shown, there are a plurality of first air outlet holes 12, and the plurality of first air outlet holes 12 are arranged on the side wall of the main body 10 at intervals along the circumference of the main body 10. Specifically, the first air outlet holes 12 are used to guide the purge gas to the bottom of the reaction chamber. To ensure that the first air outlet holes 12 blow the purge gas uniformly to the four sides of the bottom of the reaction chamber, in this embodiment, a plurality of first air outlet holes 12 are provided, and the plurality of first air outlet holes 12 are arranged on the side wall of the main body 10 at intervals along the circumference of the main body 10. The plurality of first air outlet holes 12 are all facing the bottom of the reaction chamber, so that the purge gas enters the interior of the main body 10 through the air inlet channel 11, and then is purged toward the bottom of the reaction chamber through the plurality of first air outlet holes 12, further avoiding the phenomenon of a purge blind spot at the bottom of the reaction chamber, thereby improving the quality of the produced product and the stability of the reaction environment, while improving the structural stability of the main body 10.
[0033] In a specific embodiment, referring to Figure 1a 、 Figure 1c 、 Figure 1d 、 Figure 2a 、 Figure 2c to Figure 2dAs shown, the main body 10 is further provided with a support rib 13, which extends horizontally outward from the side wall of the main body 10, and the support rib 13 is stuck in the connection between the bottom wall of the reaction chamber and the pipeline.
[0034] Specifically, the main body 10 is installed at the bottom of the reaction chamber. The specific method can be locking, clamping, overlapping, etc., which is not limited here. The main body 10 in this embodiment is installed in the reaction chamber in a manner of being clamped at the bottom of the reaction chamber. Specifically, the main body 10 is further provided with a support rib 13, and the support rib 13 is horizontally extended outward from the side wall of the main body 10, that is, the support rib 13 protrudes from the side wall of the main body 10. When the main body 10 is installed in the reaction chamber, the bottom end of the support rib 13 will abut against the bottom wall of the reaction chamber, so that the support rib 13 is clamped between the bottom wall of the reaction chamber and the pipeline. The connecting point, wherein the pipe refers to a pipe for introducing a purge gas, which is generally a bellows; therefore, when installing the gas separator into the interior of the reaction chamber, the main body 10 is placed at the connecting point between the bottom wall of the reaction chamber and the pipe, and the main body 10 is supported at the connecting point between the bottom wall of the reaction chamber and the pipe by the supporting ribs 13, so that the main body 10 is installed in the reaction chamber, so that the purge gas guided into the reaction chamber by the pipe is diverted by the gas separator before entering the reaction chamber, thereby making the purge gas evenly blown to all corners of the reaction chamber, thereby improving the cleaning effect of the cleaning process.
[0035] In one embodiment, referring to Figure 1a 、 Figure 1c 、 Figure 1d 、 Figure 2a 、 Figure 2c to Figure 2d As shown, there are multiple support ribs 13 , and the multiple support ribs 13 are spaced apart along the circumference of the main body 10 , and each support rib 13 is located between two adjacent first air outlet holes 12 .
[0036] Specifically, in order to further ensure that the support rib 13 can allow the main body 10 to be stuck in the reaction chamber and provide a more stable supporting effect on the main body 10, a plurality of support ribs 13 are provided, and the plurality of support ribs 13 are arranged at intervals along the circumference of the main body 10, so that the main body 10 can be evenly supported in the reaction chamber by the plurality of support ribs 13, thereby improving the stability of the main body 10 installed in the reaction chamber; at the same time, each of the support ribs 13 is located between two adjacent first air outlets 12, so that the support ribs 13 are provided at both ends of the first air outlet 12, thereby improving the structural stability of the main body 10.
[0037] More specifically, refer to Figure 1a 、 Figure 1c 、 Figure 1d 、 Figure 2a 、 Figure 2c to Figure 2d As shown, the support rib 13 and the first air outlet 12 are both located at the upper part of the main body 10, that is, the main body 10 includes an embedded portion 15, and the embedded portion 15 is located below the support rib 13 and the first air outlet 12, and the embedded portion 15 is used to be embedded in the pipe. The embedded portion 15 is located below the support rib 13 and the first air outlet 12, that is, the embedded portion 15 is located in the middle and lower part of the main body 10, or the embedded portion 15 is located in the lower part of the main body 10, and the diameter of the embedded portion 15 is consistent with the diameter of the pipe, so that the embedded portion 15 can be embedded in the pipe. The pipe refers to a pipe for introducing purge gas, generally a bellows, so that the gas separator can be fixedly installed in the reaction chamber, improving the installation stability of the gas separator and the reaction chamber, thereby improving the structural stability of the equipment, and preventing the gas separator from shaking or detaching from the connection between the reaction chamber and the pipe to affect the process.
[0038] In one embodiment, referring to Figure 1a 、 Figure 1d 、 Figure 2a 、 Figure 2c As shown, the bottom end of the support rib 13 is located on the same horizontal plane as the bottom end of the first air outlet 12. Specifically, the support rib 13 and the first air outlet 12 are arranged adjacent to each other, that is, the first air outlet 12 is provided between two adjacent support ribs 13, and the bottom end of the support rib 13 abuts against the bottom wall of the reaction chamber, so that the main body 10 is stuck inside the reaction chamber. To ensure that the purge gas can purge toward the bottom wall of the reaction chamber, in this embodiment, the bottom end of the support rib 13 and the bottom end of the first air outlet 12 are arranged on the same horizontal plane, so that the lowest point of the support rib 13 and the lowest point of the first air outlet 12 are located at the same position, thereby enabling the main body 10 to be installed in the reaction chamber, and the bottom end of the support rib 13 abuts against the bottom wall of the reaction chamber. At this time, the bottom wall of the first air outlet 12 and the bottom wall of the reaction chamber are on the same horizontal plane.
[0039] When the purge gas flows from the first air outlet 12 to the reaction chamber, the purge gas can be horizontally purged toward the bottom space of the reaction chamber, and the purge gas is horizontally purged from the center of the bottom of the reaction chamber toward the four sides of the bottom of the reaction chamber, ensuring that the purge gas purges the bottom wall of the reaction chamber and avoids the occurrence of a purge blind spot at the bottom of the reaction chamber, especially at the position where the bottom wall of the reaction chamber is close to the support rib 13. Therefore, the diversion effect of the gas separator is further improved to ensure that the purge gas can purge various positions of the reaction chamber, thereby improving the quality of the produced products and the stability of the reaction environment.
[0040] In a specific embodiment, referring to Figures 1a to 2d As shown, a plurality of second air outlet holes 14 are provided at intervals on the top of the main body 10 . The plurality of second air outlet holes 14 are arranged around the outside of the port of the air inlet channel 11 , and the second air outlet holes 14 are communicated with the air inlet channel 11 .
[0041] Specifically, the main body 10 is further provided with a plurality of second air outlet holes 14, which are used to introduce the purge gas obliquely upward toward the reaction chamber. The plurality of second air outlet holes 14 are spaced apart at the top of the main body 10, and the second air outlet holes 14 are connected to the air inlet channel 11, so that the purge gas flows into the interior of the main body 10 from the bottom end of the air inlet channel 11, and can flow to the outside through the second air outlet holes 14; the plurality of second air outlet holes 14 are arranged on the outside of the port of the air inlet channel 11, that is, the second air outlet holes 14 are provided around the air inlet channel 11, so that the purge gas can flow obliquely upward toward the reaction chamber through the plurality of second air outlet holes 14, further ensuring that the purge gas purges every corner of the reaction chamber.
[0042] When the cleaning process is started, the purge gas flows into the air inlet channel 11 through the pipeline, and part of the purge gas is blown horizontally toward the bottom of the reaction chamber through the first air outlet 12, part of the purge gas is blown obliquely upward toward the middle and upper parts of the reaction chamber through the second air outlet 14, and part of the purge gas is blown upward toward the middle and upper parts of the reaction chamber through the top port of the air inlet channel 11, thereby achieving purge of various positions of the reaction chamber and avoiding purge blind spots.
[0043] Therefore, in this embodiment, by providing the second air outlet 14 at the top of the main body 10, the purge gas is directed obliquely upward toward the middle and upper portions of the reaction chamber, expanding the purge gas's sweeping range and further avoiding blind spots within the reaction chamber. This improves the cleaning effect, ensuring a stable reaction environment and product quality. Furthermore, the oblique upward flow of the purge gas through the second air outlet 14 into the reaction chamber further disperses the airflow, preventing turbulence and improving operational stability during the cleaning process.
[0044] More specifically, the outer edge of the top of the main body 10 and the outer edge of the support rib 13 are located on the same vertical plane, that is, the upper surface of the main body 10 protrudes from the side of the main body 10, and the top diameter of the main body 10 is larger than the bottom diameter of the main body 10, thereby increasing the top area of the main body 10, so as to better arrange the second air outlet 14 on the top of the main body 10. The number of the second air outlet holes 14 is increased, thereby improving the diversion range of the second air outlet holes 14, so as to better divert the purge gas and increase the purge area of the purge gas obliquely upward toward the middle and upper parts of the reaction chamber.
[0045] In one embodiment, referring to Figures 2a to 2d As shown, the plurality of second air outlet holes 14 are arranged in a row along the circumference of the port of the air inlet channel 11. Specifically, there are various arrangements of the plurality of second air outlet holes 14. In this embodiment, the plurality of second air outlet holes 14 are arranged in a row on the upper surface of the main body 10, and a row of second air outlet holes 14 is arranged along the circumference of the port of the air inlet channel 11, that is, the plurality of second air outlet holes 14 are arranged in a circle along the circumference of the air inlet channel 11 on the upper surface of the main body 10 at intervals, so that the distance from the second air outlet holes 14 to the port of the air inlet channel 11 is consistent, so as to improve the stability of the purge gas when it is purged obliquely upward from the second air outlet holes 14 toward the reaction chamber. The flow rate of the purge gas in the plurality of second air outlet holes 14 is consistent, thereby preventing turbulence. At the same time, the structural strength of the main body 10 is improved, and the service life is increased.
[0046] In a specific embodiment, referring to Figures 1a to 1d As shown, the plurality of second gas outlet holes 14 are arranged in rows and columns at intervals along the circumference of the port of the gas inlet channel 11. Specifically, the plurality of second gas outlet holes 14 are arranged in rows and columns at intervals along the circumference of the port of the gas inlet channel 11, that is, the plurality of second gas outlet holes 14 are arranged in multiple rows and columns on the upper surface of the main body 10, thereby increasing the number of the second gas outlet holes 14 and thus expanding the gas guide range of the second gas outlet holes 14, so that the purge gas can flow more evenly toward the reaction chamber and avoid turbulence. At the same time, the purge effect can be improved, and each position in the reaction chamber can be purged more carefully.
[0047] In one embodiment, the main body 10 is a ring structure composed of at least two arc-shaped blocks (not shown). Specifically, since the transmission channel for introducing the purge gas is generally a bellows, the connection between the reaction chamber and the bellows is configured as a ring. To better install the gas separator at the connection between the reaction chamber and the bellows, the main body 10 is configured as a ring structure. The main body 10 is composed of at least two arc-shaped blocks. During installation, the multiple arc-shaped blocks can be docked to form a complete ring structure, thereby facilitating installation and fixation and improving assembly efficiency.
[0048] In another embodiment, the main body 10 is an integrally formed structure. Specifically, the main body 10 is provided as an integrally formed structure, thereby improving the structural stability of the main body 10 and increasing the service life of the main body 10. In addition, the integrally formed main body 10 reduces the production cost of the main body 10.
[0049] This embodiment also provides a thin film deposition device (not shown in the figure), which includes a gas separation device. The gas separation device can adopt any gas separation device provided by the present invention. Since the previous description has already made a detailed introduction to the specific structure and working principle of the gas separation device, for the sake of conciseness of the description, it will not be repeated here.
[0050] The thin film deposition equipment in this embodiment adopts the gas separation device provided by the present invention. The gas separation device can improve the uniformity of the airflow distribution of the purge gas, avoid the occurrence of a purge blind area in the reaction chamber, and enable the thin film deposited at the bottom of the reaction chamber to be effectively purged and removed, thereby improving the cleaning effect of the cleaning process and avoiding the phenomenon of gradual thickening and aging of the thin film in the reaction chamber after long-term operation of the thin film deposition equipment.
[0051] At the same time, it avoids the phenomenon that when the number of processes of the thin film deposition equipment increases, the residual bottom film will be peeled off due to stress changes or air flow disturbances to form fine dust, thereby improving the quality of products produced by the thin film deposition equipment and improving the stability of the reaction environment of the thin film deposition equipment.
[0052] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.
Claims
1. A gas separation device installed at the bottom of a reaction chamber of a thin film deposition device, characterized in that: include: a main body, the main body being provided with an air inlet channel and a first air outlet communicating with the air inlet channel, the air inlet channel extending from the lower surface of the main body to the upper surface, the first air outlet being provided on a side wall of the main body and opening toward the bottom of the reaction chamber; The purge gas flows upward from the bottom end of the air inlet channel, part of it is purged toward the reaction chamber through the top end of the air inlet channel, and part of it is purged toward the bottom of the reaction chamber through the first air outlet.
2. The gas separation device according to claim 1, characterized in that There are a plurality of first air outlet holes, and the plurality of first air outlet holes are arranged on the side wall of the main body at intervals along the circumference of the main body.
3. The gas separation device according to claim 2, characterized in that The main body is further provided with a supporting rib, which extends horizontally outward from the side wall of the main body and is stuck at the connection between the bottom wall of the reaction chamber and the pipeline.
4. The gas separation device according to claim 3, characterized in that There are a plurality of support ribs, and the plurality of support ribs are spaced apart along the circumference of the main body, and each of the support ribs is located between two adjacent first air outlet holes.
5. The gas separation device according to claim 3, characterized in that The bottom end of the supporting rib and the bottom end of the first air outlet are located on the same horizontal plane.
6. The gas separation device according to claim 1, characterized in that The top of the main body is provided with a plurality of second air outlet holes arranged at intervals, the plurality of second air outlet holes are arranged in a ring outside the port of the air inlet channel, and the second air outlet holes are communicated with the air inlet channel.
7. The gas separation device according to claim 6, characterized in that The plurality of second air outlet holes are arranged in a row along the circumferential direction of the port of the air inlet passage.
8. The gas separation device according to claim 6, characterized in that The plurality of second air outlet holes are arranged in rows and columns at intervals along the circumference of the port of the air inlet passage.
9. The gas separation device according to claim 1, characterized in that The main body is a circular ring structure composed of at least two arc-shaped blocks.
10. A thin film deposition device, characterized in that: The invention comprises the gas separation device according to any one of claims 1 to 9.