Method for forming oxide semiconductor film

Abstract

The forming method of the oxide semiconductor film comprises the following steps: preparing inorganic sol, wherein the inorganic sol comprises ammonia water, acetylacetone, aluminum salt and ethylene glycol; coating the inorganic sol on a substrate, and drying to form an oxide semiconductor film; and annealing the oxide semiconductor film. The method is simple, efficient and low in cost, and the stable oxide semiconductor film can be formed on the substrate, so that the performance of the substrate and the film body is improved.

Description

Technical Field

[0001] The present invention relates to the field of film processing, and in particular to a method for forming an oxide semiconductor film. Background Art

[0002] Oxide semiconductor films are widely used in optoelectronic devices, nanoelectronic devices, energy storage devices, and other fields. Previous research has used methods such as magnetron sputtering and chemical vapor deposition to prepare oxide semiconductor films, but these methods have drawbacks such as harsh preparation conditions, high costs, and low production efficiency.

[0003] Therefore, it is necessary to provide an improved method for forming an oxide semiconductor film to overcome the above defects. Summary of the Invention

[0004] The object of the present invention is to provide an improved method for forming an oxide semiconductor film, which is simple, efficient, low-cost, and can form a stable oxide semiconductor film on a substrate, thereby improving the performance of the substrate and the film.

[0005] To achieve the above-mentioned object, the method for forming an oxide semiconductor film of the present invention comprises the following steps:

[0006] preparing an inorganic sol, wherein the inorganic sol comprises ammonia water, acetylacetone, aluminum salt, and ethylene glycol;

[0007] coating the inorganic sol on a substrate and forming an oxide semiconductor film after drying; and

[0008] The oxide semiconductor film is subjected to annealing treatment.

[0009] Compared to existing technologies, the method of the present invention first prepares an inorganic sol with a specific composition, then coats the inorganic sol on a substrate, dries it, and forms an oxide semiconductor film. Finally, the oxide semiconductor film undergoes a thermal decomposition treatment to improve its quality and stability. The resulting oxide semiconductor film has superior performance, adapting to a wider range of applications. Furthermore, the method is simple, efficient, and low-cost, making it suitable for industrial application.

[0010] As an embodiment, the preparation of the inorganic sol includes: adding the ammonia water and the acetylacetone into a reactor, stirring and mixing, then adding the aluminum salt and stirring evenly; after standing to form a gel, adding the ethylene glycol to convert the gel into the inorganic sol.

[0011] As an embodiment, the drying of the inorganic sol includes: heating and drying at a predetermined temperature.

[0012] As an embodiment, the predetermined temperature is 130-170° C. More preferably, the predetermined temperature is 150° C.

[0013] As an embodiment, the temperature of the annealing treatment is 300-700° C. More preferably, the temperature of the annealing treatment is 500° C.

[0014] As an embodiment, the annealing treatment time is 20-40 minutes.

[0015] As an embodiment, the substrate is a glass substrate.

[0016] As an embodiment, the inorganic sol is aluminum oxyacetylacetonate oxime. DETAILED DESCRIPTION

[0017] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to some embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the connotations of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0018] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0019] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0020] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0021] The following examples further illustrate the method for forming an oxide semiconductor film of the present invention, but the present invention is not limited thereto. The method of the present invention is intended to provide a method for forming an oxide semiconductor film that is simple, efficient, and low-cost, capable of forming a stable oxide semiconductor film on a substrate, thereby improving the performance of the substrate and the film.

[0022] In one embodiment of the method for forming an oxide semiconductor film of the present invention, the method includes the following steps:

[0023] preparing an inorganic sol, wherein the inorganic sol comprises ammonia water, acetylacetone, aluminum salt, and ethylene glycol;

[0024] coating the inorganic sol on a substrate and forming an oxide semiconductor film after drying; and

[0025] The oxide semiconductor film is subjected to annealing treatment.

[0026] In the method of the present invention, an inorganic sol with a specific composition is first prepared. This inorganic sol is then coated on a substrate and dried to form an oxide semiconductor film. Finally, the oxide semiconductor film is subjected to a post-treatment process to improve its quality and stability. The resulting oxide semiconductor film has excellent performance and is suitable for a wider range of applications. Furthermore, this method is simple, efficient, and low-cost, making it suitable for industrial application.

[0027] In a specific embodiment, first prepare inorganic sol, in reactor, add a certain amount of ammoniacal liquor and acetylacetone, after uniformly mixing, add appropriate aluminum salt and stir. Mixing solutions is placed under room temperature and left standstill, it is formed into gel. Subsequently, while stirring, slowly add appropriate amount of ethylene glycol, continue to stir, gel is changed into colloidal sol gradually. Finally, the inorganic sol for preparing is packed in the sealed container for standby use. In certain embodiments, inorganic sol is aluminum oxygen acetylacetonato oxime.

[0028] Next, the prepared inorganic sol solution is coated on a substrate, which in this embodiment is a glass substrate, although other substrates may be used in other embodiments. It is then dried at a predetermined temperature to form an oxide semiconductor film of a predetermined thickness. In some embodiments, the predetermined drying temperature is 130-170°C. In this embodiment, the drying temperature is approximately 150°C. In some embodiments, the oxide semiconductor film has a thickness of 1 μm-10 μm. In other embodiments, the oxide semiconductor film may have a thickness on the nanometer scale.

[0029] Finally, the oxide semiconductor film is annealed to improve its quality and stability. For example, the annealing temperature is 300-700°C. More preferably, in this embodiment, the annealing temperature is 500°C. The annealing time can be determined based on actual conditions. In this embodiment, the annealing time is 20-40 minutes. The oxide semiconductor film after annealing has better performance.

[0030] In summary, the method of the present invention first prepares an inorganic sol with a specific composition, then coats the inorganic sol on a substrate, dries it, and forms an oxide semiconductor film. Finally, the oxide semiconductor film is subjected to a thermal decomposition treatment to improve its quality and stability. The resulting oxide semiconductor film exhibits superior performance, adaptable to a wider range of applications. Furthermore, this method is simple, efficient, and low-cost, making it suitable for industrial application.

[0031] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for forming an oxide semiconductor film, characterized in that: The following steps are involved: preparing an inorganic sol, wherein the inorganic sol comprises ammonia water, acetylacetone, aluminum salt, and ethylene glycol; coating the inorganic sol on a substrate and forming an oxide semiconductor film after drying; and The oxide semiconductor film is subjected to annealing treatment.

2. The method for forming an oxide semiconductor film according to claim 1, wherein The preparation of the inorganic sol comprises: adding the ammonia water and the acetylacetone into a reactor, stirring and mixing, then adding the aluminum salt and stirring evenly; after standing to form a gel, adding the ethylene glycol to convert the gel into the inorganic sol.

3. The method for forming an oxide semiconductor film according to claim 1, wherein: The drying of the inorganic sol includes: heating and drying at a predetermined temperature.

4. The method for forming an oxide semiconductor film according to claim 2, wherein: The predetermined temperature is 130-170°C.

5. The method for forming an oxide semiconductor film according to claim 4, wherein: The predetermined temperature is 150°C.

6. The method for forming an oxide semiconductor film according to claim 1, wherein: The temperature of the annealing treatment is 300-700°C.

7. The method for forming an oxide semiconductor film according to claim 6, wherein: The temperature of the annealing treatment is 500°C.

8. The method for forming an oxide semiconductor film according to claim 1, wherein The annealing treatment time is 20-40 minutes.

9. The method for forming an oxide semiconductor film according to claim 1, wherein: The substrate is a glass substrate.

10. The method for forming an oxide semiconductor film according to claim 1, wherein The inorganic sol is aluminum oxyacetylacetonate oxime.