Cadmium zinc telluride crystal growth device and growth method

Abstract

The invention provides a cadmium zinc telluride crystal growth device and a growth method. The tellurium-zinc-cadmium crystal growing device comprises a quartz crucible, a sealing flange, a heater, a lifting appliance, a heat insulation plate and a lifting mechanism, the bottom of the quartz crucible is an inverted cone part, and the quartz crucible is used for containing tellurium-zinc-cadmium polycrystals; the sealing flange is used for being fixed to the top of the quartz crucible in a sealed mode and conducting cleaning and vacuumizing. The heater is spaced from the quartz crucible along the radial direction, and the heater is fixed; the lifting appliance is mounted at the top of the sealing flange and is used for suspending the sealing flange and the quartz crucible so as to enable the quartz crucible to be suspended and immobile; the heat insulation plate is a cylinder with a closed bottom and an open upper end, and the wall thickness of the cylinder is smaller than the radial interval; the lifting mechanism is used for driving the heat insulation plate to gradually move upwards so as to be inserted into the radial interval and gradually move upwards, so that the temperature of melt in the quartz crucible is lower than the melting point from bottom to top, and tellurium-zinc-cadmium crystals are gradually crystallized. The cadmium zinc telluride crystal growth device is adopted in the cadmium zinc telluride crystal growth method.

Description

Technical Field

[0001] The present disclosure relates to the field of crystal growth, and more particularly to a cadmium zinc telluride crystal growth device and a growth method. Background Art

[0002] Traditional CdZnTe crystal growth methods primarily include the VGF method (vertical gradient freezing), the VB method (vertical Bridgman method), and the THM method (traveling heater method). While the VB method offers significant advantages in controlling crystal growth parameters and temperature distribution, it faces significant challenges in growing large CdZnTe crystals due to the problem of mechanical vibration perturbing nucleation. The THM method also utilizes a temperature gradient to synthesize CdZnTe single crystals, but this method can only produce smaller CdZnTe single crystals and exhibits a very slow growth rate, typically only 5 mm / day. The VGF method utilizes a temperature gradient to synthesize CdZnTe single crystals. Because the raw materials are fixed in position within the furnace, the influence of the melt on the temperature field is avoided, ensuring field stability. This method can produce larger single crystals than the previous two methods, and the grown crystals have a lower dislocation density. However, this method requires high control of the temperature distribution, and the production of CdZnTe single crystals using this method typically employs a two-temperature zone design with a high-temperature zone and a low-temperature zone, resulting in imprecise temperature distribution control.

[0003] Therefore, it is necessary to find a new crystal growth method. Summary of the Invention

[0004] In view of the problems existing in the background technology, an object of the present disclosure is to provide a CdZnTe crystal growth device and a growth method, which can ensure that no additional mechanical vibration is generated during the CdZnTe crystal growth process and reduce crystal defects.

[0005] Another object of the present disclosure is to provide a CdZnTe crystal growth device and a growth method, which can make gradual crystallization more precise.

[0006] Another object of the present disclosure is to provide a CdZnTe crystal growth device and a growth method, which make the adjustment of the temperature field conditions and growth rate of crystal growth simpler and more convenient.

[0007] Another object of the present disclosure is to provide a CdZnTe crystal growth device and a growth method, which can more easily obtain large-sized single crystals.

[0008] Thus, a cadmium zinc telluride crystal growth device includes a quartz crucible, a sealing flange, a heater, a hanger, a heat shield, and a lifting mechanism. The bottom of the quartz crucible is an inverted cone. The quartz crucible is used to load cadmium zinc telluride polycrystals and is in a vertical state. The sealing flange is used to be detachably sealed and fixed to the top of the quartz crucible and to clean and evacuate the quartz crucible. The heater is arranged around the quartz crucible and is radially spaced from the quartz crucible. The heater is used to heat the quartz crucible to melt the cadmium zinc telluride polycrystal into a melt, and the heater is fixed. The hanger is installed on the top of the sealing flange and is used to suspend The sealing flange and the quartz crucible are fixed together so that the quartz crucible is suspended motionlessly. The heat shield is in the shape of a cylinder with a closed bottom and an open top. The wall thickness of the cylinder is less than the radial spacing between the heater and the quartz crucible, and the depth of the cylinder is set to be sufficient to meet the requirement that all the cadmium zinc telluride polycrystals in the quartz crucible are transformed into cadmium zinc telluride crystals. The lifting mechanism is connected to the heat shield, and the lifting mechanism is used to drive the heat shield to gradually move upward so as to be inserted into the radial spacing between the quartz crucible and the heater and gradually move upward so that the temperature of the melt in the quartz crucible is lowered from the bottom to the top below the melting point, thereby gradually crystallizing into cadmium zinc telluride crystals.

[0009] A CdZnTe crystal growth method adopts the aforementioned CdZnTe crystal growth device to grow CdZnTe crystals.

[0010] The beneficial effects of the present disclosure are as follows.

[0011] In the CdZnTe crystal growth apparatus and growth method according to the present disclosure, since the heater is fixed and the sealing flange and the quartz crucible are fixed together and the quartz crucible is suspended by a hanger, it is ensured that no additional mechanical vibration is generated during the CdZnTe crystal growth process in the quartz crucible, thereby reducing crystal defects.

[0012] In the CdZnTe crystal growth apparatus and growth method according to the present disclosure, the heat shield plate is driven by a lifting mechanism to gradually move upward to be inserted into the radial gap between the quartz crucible and the heater and gradually move upward, so that the temperature of the melt in the quartz crucible is lowered from the bottom to the top below the melting point and gradually crystallizes into CdZnTe crystals. This is simpler and more convenient than the temperature control of the VB method, THM method, and VGF method in the background art. Moreover, since the heat shield plate is inserted into the radial gap between the quartz crucible and the heater, the portion of the heater below the top of the heat shield plate is radially separated by the heat shield plate. This makes the portion of the heater above the top of the heat shield plate and the portion of the heater below the top of the heat shield plate physically separated from each other, which can make the temperature of the melt in the quartz crucible lowered from the melting point and gradually crystallize more accurately from the bottom to the top.

[0013] In the CdZnTe crystal growth apparatus and growth method according to the present disclosure, since the heater is fixed, the crystal growth temperature gradient and growth rate adjustment only need to control the rising speed of the heat insulation plate, which makes the adjustment of the temperature field conditions and growth rate of crystal growth simpler and more convenient.

[0014] In addition, as verified by the test process, the CdZnTe crystal growth apparatus according to the present disclosure can obtain most single crystals when growing CdZnTe crystals, that is, the crystals have dominant single crystals, and larger single crystal particles can be easily cut out, that is, large-sized single crystals can be more easily obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of the structure of the cadmium zinc telluride crystal growth device according to the present disclosure.

[0016] Figure 2 This is a schematic diagram of the movement of the CdZnTe crystal growth device during the CdZnTe crystal growth process.

[0017] Figure 3 This is a photograph of a crystal produced in Example 1 of the CdZnTe crystal growth method using the CdZnTe crystal growth apparatus according to the present disclosure.

[0018] Figure 4 This is a photograph of the crystal prepared in Comparative Example 1 using the VB method.

[0019] Figure 5 This is a photograph of the crystal prepared in Comparative Example 2 using the THM method.

[0020] Figure 6 This is a photograph of the crystal prepared in Comparative Example 3 using the VGF method.

[0021] The description of the accompanying drawings is as follows:

[0022] 100 CdZnTe crystal growth device 5 heat shield

[0023] 1. Quartz crucible DL lower end diameter

[0024] 11Inverted cone DU upper end diameter

[0025] 12 cylinder part 6 lifting mechanism

[0026] 2 Sealing flange S radial spacing

[0027] 21 exhaust holes 200 CdZnTe polycrystalline

[0028] 22 air inlet holes 300 melt

[0029] 3 heaters 400 CdZnTe crystals

[0030] 4 spreaders DETAILED DESCRIPTION

[0031] The accompanying drawings show embodiments of the present disclosure, and it will be understood that the disclosed embodiments are merely examples of the present disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one of ordinary skill in the art to implement the present disclosure in various ways.

[0032] [CdZnTe crystal growth device]

[0033] Reference Figure 1 and Figure 2 The CdZnTe crystal growing apparatus 100 according to the present disclosure includes a quartz crucible 1 , a sealing flange 2 , a heater 3 , a sling 4 , a heat shield 5 , and a lifting mechanism 6 .

[0034] The bottom of the quartz crucible 1 is an inverted cone 11. The quartz crucible 1 is used to hold CdZnTe polycrystals 200 and is held in an upright position. A sealing flange 2 is removably sealed and secured to the top of the quartz crucible 1, allowing for cleaning and evacuation of the crucible. A heater 3 is positioned around the crucible 1 and radially spaced apart from the crucible. Heater 3 heats the crucible 1 to melt the CdZnTe polycrystals 200 into a melt 300. Heater 3 is stationary.

[0035] A hanger 4 is mounted on top of the sealing flange 2 and is used to suspend the fixed sealing flange 2 and quartz crucible 1, ensuring that the quartz crucible 1 remains suspended. The thermal insulation board 5 is cylindrical with a closed bottom and an open top. The wall thickness of the cylinder is less than the radial spacing S between the heater 3 and the quartz crucible 1, and the depth of the cylinder is sufficient to ensure that all of the CdZnTe polycrystals 200 in the quartz crucible 1 are transformed into CdZnTe crystals 400. A lifting mechanism 6 is connected to the thermal insulation board 5 and is used to drive the thermal insulation board 5 upward to gradually move into the radial spacing S between the quartz crucible 1 and the heater 3. The lifting mechanism 6 gradually moves upward, causing the temperature of the melt 300 in the quartz crucible 1 to gradually decrease from the bottom to the top, below the melting point, thereby gradually crystallizing into CdZnTe crystals 400.

[0036] In the CdZnTe crystal growth apparatus 100 according to the present disclosure, since the heater 3 is fixed and the sealing flange 2 and the quartz crucible 1 are fixed together, the quartz crucible 1 is suspended by the hanger 4, ensuring that no additional mechanical vibration is generated during the growth of the CdZnTe crystal 400 in the quartz crucible 1, thereby reducing crystal defects.

[0037] In the CdZnTe crystal growth apparatus 100 according to the present disclosure, the heat shield 5 is driven by the lifting mechanism 6 to gradually move upward to be inserted into the radial gap S between the quartz crucible 1 and the heater 3 and gradually move upward, so that the temperature of the melt 300 in the quartz crucible 1 is lowered from the melting point from bottom to top, and gradually crystallizes into CdZnTe crystals 400. This is simpler and more convenient than the temperature control of the VB method, THM method, and VGF method in the background art. Moreover, since the heat shield 5 is inserted into the radial gap S between the quartz crucible 1 and the heater 3, the portion of the heater 3 below the top of the heat shield 5 is radially separated by the heat shield 5. In this way, the portion of the heater 3 above the top of the heat shield 5 and the portion of the heater 3 below the top of the heat shield 5 are physically separated from each other, which can make the temperature of the melt 300 in the quartz crucible 1 lower from the melting point from bottom to top, and gradually crystallize more accurately.

[0038] In the CdZnTe crystal growth apparatus 100 according to the present disclosure, since the heater 3 is fixed, the crystal growth temperature gradient and growth rate adjustment only need to control the rising speed of the heat insulation plate 5, which makes the adjustment of the temperature field conditions and growth rate of crystal growth simpler and more convenient.

[0039] In addition, as verified by the test process, the CdZnTe crystal growth apparatus 100 according to the present disclosure can obtain most single crystals when growing CdZnTe crystals, that is, the crystals have dominant single crystals, and larger single crystal particles can be easily cut out, that is, large-sized single crystals can be more easily obtained.

[0040] For example, the sealing flange 2 is provided with an exhaust hole 21 and an air inlet 22 . The exhaust hole 21 is used to evacuate the quartz crucible 1 , and the air inlet 22 is used to introduce a purge gas (such as nitrogen) into the quartz crucible 1 .

[0041] For example, the sling 4 is a stainless steel rod. The stainless steel rod and the sealing flange 2 are detachably fixed together, for example, the stainless steel rod and the sealing flange 2 are detachably fixed together through a threaded fitting structure.

[0042] like Figure 1 As shown, in one example, the inverted conical portion 11 of the quartz crucible 1 is provided with a cylindrical portion 12 above. The inner cavity of the heat shield 5 is an inverted frustum with a larger upper portion and a smaller lower portion. The lower end diameter DL of the inverted frustum is not less than the outer diameter of the cylindrical portion 12 of the quartz crucible 1. Furthermore, the upper end diameter DU of the inverted frustum is twice the lower end diameter DL of the inverted frustum. The outer circumference of the heat shield 5 is cylindrical, and the outer diameter of the outer circumference of the heat shield 5 is twice the lower end diameter DL of the inverted frustum.

[0043] For example, the heat insulation board 5 is made of mullite ceramics.

[0044] The lifting mechanism 6 is a cylinder or a nut and screw transmission mechanism.

[0045] In one example, the diameter DL of the lower end of the inverted frustum is 75 mm; the diameter of the upper end of the inverted frustum is 150 mm; the height of the inverted frustum is 200 mm; the outer diameter of the outer peripheral surface of the heat insulation plate 5 is 150 mm; the inner diameter of the cylindrical portion 12 of the quartz crucible 1 is 4 inches; the height of the inverted conical portion 11 of the quartz crucible 1 is 50 mm; and the radial spacing S is 50 mm.

[0046] [CdZnTe crystal growth method]

[0047] The CdZnTe crystal growth method according to the present disclosure uses the aforementioned CdZnTe crystal growth apparatus 100 to grow a CdZnTe crystal 400 .

[0048] The features, effects and operation of the CdZnTe crystal growth apparatus 100 used in the CdZnTe crystal growth method according to the present disclosure are described above and will not be repeated here.

[0049] In one example, referring to Figure 2 The CdZnTe crystal growth method operates as follows: at the beginning of crystal growth, the top of the heat shield 5 is flush with the bottom of the inverted cone 11 of the quartz crucible 1; the heater 3 raises the temperature to melt the CdZnTe polycrystal 200 to form a melt 300, which is then kept warm; then the lifting mechanism 6 begins to move the heat shield 5 upward at a specified speed until the melt 300 is completely formed into CdZnTe crystals 400; then the temperature is lowered at a predetermined rate to room temperature, and the CdZnTe crystals 400 are removed.

[0050] Specifically, the diameter DL of the lower end of the inverted cone is 75 mm; the diameter of the upper end of the inverted cone is 150 mm; the height of the inverted cone is 200 mm; the outer diameter of the outer peripheral surface of the heat insulation plate 5 is 150 mm; the inner diameter of the cylindrical portion 12 of the quartz crucible 1 is 4 inches; the height of the inverted cone portion 11 of the quartz crucible 1 is 50 mm; the interval S is 50 mm; the heater 3 raises the temperature to 1100°C and keeps warm for 24 hours, and the lifting mechanism 6 starts to move the heat insulation plate 5 upward at a speed of 1 mm / h, and the moving height is 150 mm; then the temperature is lowered at a speed of 30°C / h until it reaches room temperature, and then the cadmium zinc telluride crystal 400 is taken out.

[0051] [test]

[0052] Example 1

[0053] Example 1 uses the following CdZnTe crystal growth apparatus 100 .

[0054] The CdZnTe crystal growing apparatus 100 includes a quartz crucible 1 , a sealing flange 2 , a heater 3 , a sling 4 , a heat shield 5 and a lifting mechanism 6 .

[0055] The quartz crucible 1 has an inverted conical portion 11 at the bottom, and a cylindrical portion 12 above the inverted conical portion 11. The cylindrical portion 12 has an inner diameter of 4 inches and a height of 200 mm. The height of the inverted conical portion 11 is 50 mm. The quartz crucible 1 is in a vertical position. A sealing flange 2 is removably sealed to the top of the quartz crucible 1 and cooperates with an air inlet 22 and an air outlet 21 to provide nitrogen purging and vacuuming of the quartz crucible 1. A heater 3 is disposed around the quartz crucible 1 and radially spaced apart from the quartz crucible 1. The radial spacing S between the heater 3 and the quartz crucible 1 is 50 mm. The heater 3 is stationary. A hanger 4 is a stainless steel rod mounted on the top of the sealing flange 2. The stainless steel rod and the sealing flange 2 are removably secured together via a threaded engagement. The hanger 4 is used to suspend the sealing flange 2 and the quartz crucible 1, thereby ensuring that the quartz crucible 1 remains stationary. The insulation board 5 is made of mullite ceramic and is cylindrical, with a closed bottom and an open top. Its inner cavity is an inverted cone of varying sizes. Its outer surface is cylindrical, with a lower diameter (DL) of 75 mm and an upper diameter (DL) of 150 mm. The height of the cone is 200 mm, and the outer diameter of the outer surface is 150 mm. A lifting mechanism 6 is connected to the insulation board 5 and is a nut-screw transmission mechanism.

[0056] The cadmium zinc telluride crystal growth method of Example 1 adopts the following steps:

[0057] 6 kg of cadmium zinc telluride polycrystals 200 are placed into a quartz crucible 1. A sealing flange 2 is detachably sealed and fixed to the top of the quartz crucible 1. Nitrogen is purged and vacuumed into the quartz crucible 1 through the gas inlet 22 and the gas exhaust hole 21. A hanger 4 suspends the sealing flange 2 and the quartz crucible 1 so that the quartz crucible 1 is suspended and does not move.

[0058] At the beginning of crystal growth, the top of the insulation board 5 is flush with the bottom of the inverted cone 11 of the quartz crucible 1; the heater 3 raises the temperature to 1100°C and keeps it there for 24 hours, and the lifting mechanism 6 begins to move the insulation board 5 upward at a speed of 1 mm / h, with a moving height of 150 mm; then the temperature is lowered at a speed of 30°C / h until it reaches room temperature, and then the cadmium zinc telluride crystal 400 is taken out.

[0059] Comparative Example 1

[0060] The cadmium zinc telluride crystal growth method of Comparative Example 1 adopts the following steps:

[0061] 6 kg of CdZnTe polycrystals 200 are placed into a quartz crucible 1. A sealing flange 2 is detachably sealed and fixed to the top of the quartz crucible 1. The quartz crucible 1 is purged with nitrogen and evacuated through the gas inlet 22 and the gas exhaust hole 21. The fixed sealing flange 2 and the quartz crucible 1 are then placed in a VB furnace.

[0062] The heater of the VB furnace was raised to 1100°C and kept at this temperature for 24 hours. Then, the quartz crucible 1 was moved downward at a speed of 1 mm / h to a height of 150 mm. The temperature was then lowered at a speed of 30°C / h to room temperature, and the crystal was taken out.

[0063] Comparative Example 2

[0064] 6 kg of CdZnTe polycrystals 200 are placed into a quartz crucible 1. A sealing flange 2 is detachably sealed and fixed to the top of the quartz crucible 1. The quartz crucible 1 is purged with nitrogen and evacuated through the gas inlet 22 and the gas exhaust 21. The fixed sealing flange 2 and the quartz crucible 1 are then placed in a THM furnace.

[0065] The THM furnace heater was raised to 1100°C and held for 24 hours. The heater was then moved upward at a rate of 1 mm / h to a height of 150 mm. The temperature was then lowered at a rate of 30°C / h to room temperature. The crystal was then removed.

[0066] Comparative Example 3

[0067] 6 kg of CdZnTe polycrystals 200 are placed into a quartz crucible 1. A sealing flange 2 is detachably sealed and fixed to the top of the quartz crucible 1. The quartz crucible 1 is purged with nitrogen and evacuated through the gas inlet 22 and the gas exhaust 21. The fixed sealing flange 2 and the quartz crucible 1 are then placed in a VGF furnace.

[0068] The temperature of the VGF furnace heater was raised to 1100°C and kept at that temperature for 24 hours. Then the program was set to gradually lower the temperature of the VGF furnace heater. Crystal growth was completed after 150 hours. The temperature was then lowered at a rate of 30°C / h until it reached room temperature.

[0069] Figure 3 : is a photo of a crystal prepared in Example 1 of the CdZnTe crystal growth method using the CdZnTe crystal growth apparatus according to the present disclosure. Figure 3 It can be seen that most of the crystals are single crystals, with only a small amount of polycrystals at the edges of the crystals.

[0070] Figure 4 : is a photo of the crystal prepared in Comparative Example 1 using the VB method. Figure 4 After inspection, the crystal has no dominant single crystal, and is composed of more polycrystalline components, making it difficult to cut out larger single crystal particles.

[0071] Figure 5 This is a photo of the crystal prepared in Comparative Example 2 using the THM method. Figure 5 It can be seen that the crystal has no dominant single crystal, but is composed of more polycrystalline components, making it difficult to cut out larger single crystal particles.

[0072] Figure 6 This is a photo of the crystal prepared in Comparative Example 3 using the VGF method. Figure 6 It can be seen that the crystal has no dominant single crystal, but is composed of more polycrystalline components, making it difficult to cut out larger single crystal particles.

[0073] The above detailed description is used to describe a number of exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein may be combined to form multiple additional combinations that are not shown for the sake of brevity.

Claims

1. A cadmium zinc telluride crystal growth device, characterized in that: It comprises a quartz crucible (1), a sealing flange (2), a heater (3), a sling (4), a heat insulation plate (5) and a lifting mechanism (6). The bottom of the quartz crucible (1) is an inverted cone (11), and the quartz crucible (1) is used to load cadmium zinc telluride polycrystals (200) and is in a vertical state; The sealing flange (2) is used to be detachably sealed and fixed to the top of the quartz crucible (1) and to clean and evacuate the quartz crucible (1); The heater (3) is arranged around the quartz crucible (1) and is spaced apart from the quartz crucible (1) in a radial direction. The heater (3) is used to heat the quartz crucible (1) to melt the cadmium zinc telluride polycrystal (200) into a melt (300). The heater (3) is fixed. The hanger (4) is installed on the top of the sealing flange (2), and the hanger (4) is used to suspend the sealing flange (2) and the quartz crucible (1) fixed together so that the quartz crucible (1) is suspended and motionless; The heat shield (5) is cylindrical with a closed bottom and an open top, the wall thickness of the cylindrical shape is less than the radial spacing (S) between the heater (3) and the quartz crucible (1), and the depth of the cylindrical shape is set to be sufficient to meet the requirement that all the cadmium zinc telluride polycrystals (200) in the quartz crucible (1) are transformed into cadmium zinc telluride crystals (400); The lifting mechanism (6) is connected to the heat insulation plate (5), and is used to drive the heat insulation plate (5) to gradually move upward so as to be inserted into the radial gap (S) between the quartz crucible (1) and the heater (3) and gradually move upward so that the temperature of the melt (300) in the quartz crucible (1) is lowered from the bottom to the top below the melting point and gradually crystallizes into cadmium zinc telluride crystals (400).

2. The CdZnTe crystal growth device according to claim 1, characterized in that: The sling (4) is a stainless steel rod.

3. The CdZnTe crystal growth device according to claim 1, characterized in that: The upper portion of the inverted cone portion (11) of the quartz crucible (1) is a cylindrical portion (12); The inner cavity of the heat insulation plate (5) is an inverted truncated cone with a larger upper portion and a smaller lower portion, and the diameter (DL) of the lower end of the inverted truncated cone is not less than the outer diameter of the cylindrical portion (12) of the quartz crucible (1).

4. The CdZnTe crystal growth device according to claim 3, characterized in that: The upper diameter of the inverted cone (DU) is twice the lower diameter of the inverted cone (DL); The outer peripheral surface of the heat insulation plate (5) is cylindrical, and the outer diameter of the outer peripheral surface of the heat insulation plate (5) is twice the lower end diameter (DL) of the inverted truncated cone.

5. The CdZnTe crystal growth device according to claim 1, wherein: The material of the heat insulation board (5) is mullite ceramics.

6. The CdZnTe crystal growth device according to claim 1, characterized in that: The lifting mechanism (6) is a cylinder or a nut screw transmission mechanism.

7. The CdZnTe crystal growth device according to claim 4, characterized in that: The lower end diameter (DL) of the frustum is 75 mm; The diameter of the upper end of the inverted cone is 150mm; The height of the frustum is 200mm; The outer diameter of the outer peripheral surface of the heat insulation plate (5) is 150 mm; The inner diameter of the cylindrical portion (12) of the quartz crucible (1) is 4 inches; The height of the inverted cone portion (11) of the quartz crucible (1) is 50 mm; The radial spacing S is 50 mm.

8. A method for growing cadmium zinc telluride crystals, characterized in that: A cadmium zinc telluride crystal (400) is grown using the cadmium zinc telluride crystal growth device (100) according to any one of claims 1 to 6.

9. The method for growing cadmium zinc telluride crystals according to claim 8, wherein: The operation of the cadmium zinc telluride crystal growth method is as follows: At the beginning of crystal growth, the top of the heat shield (5) is flush with the bottom of the inverted cone (11) of the quartz crucible (1); The heater (3) raises the temperature to melt the cadmium zinc telluride polycrystal (200) to form a melt (300), which is then kept warm. The lifting mechanism (6) then starts to move the heat shield (5) upward at a prescribed speed until the melt (300) is completely converted into cadmium zinc telluride crystals (400). The temperature is then lowered at a predetermined speed until it reaches room temperature, and the cadmium zinc telluride crystals (400) are then taken out.

10. The method for growing cadmium zinc telluride crystals according to claim 9, wherein: The lower end diameter (DL) of the frustum is 75 mm; The diameter of the upper end of the inverted cone is 150mm; The height of the frustum is 200mm; The outer diameter of the outer peripheral surface of the heat insulation plate (5) is 150 mm; The inner diameter of the cylindrical portion (12) of the quartz crucible (1) is 4 inches; The height of the inverted cone portion (11) of the quartz crucible (1) is 50 mm; The radial spacing S is 50 mm; The heater (3) raises the temperature to 1100°C and keeps the temperature for 24 hours. The lifting mechanism (6) starts to move the heat shield (5) upward at a speed of 1 mm / h to a height of 150 mm. The temperature is then lowered at a speed of 30°C / h to room temperature. The cadmium zinc telluride crystal (400) is then taken out.

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