Automatic mass production device for growth of multi-cavity gallium oxide epitaxial thin film and use method of automatic mass production device

Abstract

The invention discloses a multi-cavity gallium oxide epitaxial thin film growth automatic mass production device and a use method thereof.The growth device comprises a sliding rail, a substrate mounting structure, a substrate to be deposited, a plurality of HVPE semiconductor epitaxial growth devices, a transfer structure and an MOCVD epitaxial growth device, and the substrate mounting structure is slidably mounted on the sliding rail; a plurality of ceramic supports are arranged on the substrate installation structure, a substrate to be deposited can be placed on the ceramic supports, the HVPE semiconductor epitaxial growth device is located above the sliding rail, the substrate installation structure can drive the substrate to be deposited to move to the position under the HVPE semiconductor epitaxial growth device, and growth gas spray holes are formed in the lower end of the HVPE semiconductor epitaxial growth device. Growth gas in the HVPE semiconductor epitaxial growth device can be sprayed out from the growth gas spray holes to perform preliminary deposition on the upper surface of the substrate to be deposited, the transfer structure can take down the substrate to be deposited from the ceramic support and place the substrate to be deposited in the MOCVD epitaxial growth device, and the MOCVD epitaxial growth device can perform secondary deposition on the substrate to be deposited. The manufacturing method can greatly improve the manufacturing efficiency of the gallium oxide epitaxial thin film function part, and does not affect the quality of the gallium oxide epitaxial thin film function part.

Description

Technical Field

[0001] The present invention belongs to the technical field of gallium oxide growth, and in particular relates to a multi-cavity gallium oxide epitaxial thin film growth automated mass production device and a method for using the same. Background Art

[0002] Gallium oxide (Ga2O3) is a wide-bandgap oxide semiconductor material. It is a new member of the third generation of semiconductor materials after SiC and GaN. Ga2O3 has excellent optoelectronic properties and good thermal and chemical stability. Among them, β-Ga2O3 thin films have high transparency in the deep ultraviolet region and are very suitable for making ultraviolet optoelectronic materials. The breakdown field strength of β-Ga2O3 is 8MV / cm, which is much higher than the breakdown electric field of SiC and GaN. β-Ga2O3 has great potential in the application of field-effect transistors, Schottky diodes and other power electronic devices. At the same time, the gas-sensing properties of Ga2O3 materials are also excellent, making it a candidate material for the preparation of high-temperature oxygen-sensitive devices. Therefore, Ga2O3 materials have become a research hotspot today.

[0003] HVPE (Hydride Vapor Phase Epitaxy) is short for hydride vapor phase epitaxy. HVPE-grown crystals grow rapidly, with reports of GaN films growing at rates exceeding 100 μm / h. Furthermore, HVPE systems offer low manufacturing costs, relatively simple equipment and processes, and the ability to maintain high growth rates, making it a highly sought-after technology by researchers in recent years.

[0004] MOCVD stands for Metal Organic Chemical Vapor Deposition. It's a technique for growing thin semiconductor films by decomposing metal-organic compounds in the vapor phase to deposit crystalline materials. MOCVD is widely used in the production of LEDs, lasers, and other optoelectronic devices, and is suitable for growing high-quality thick films.

[0005] While HVPE boasts a fast growth rate, its growth precision is relatively low. While MOCVD can grow high-quality thick films, its speed is significantly slower than HVPE. For thicker gallium oxide epitaxial thin film functional components, the present invention has designed a combined device that combines the advantages of both HVPE and MOCVD while mitigating their shortcomings. This significantly improves the production efficiency of gallium oxide epitaxial thin film functional components without compromising their quality. Summary of the Invention

[0006] In view of the deficiencies in the prior art, the present invention provides a multi-cavity gallium oxide epitaxial thin film growth automated mass production device and a method for using the same.

[0007] In order to achieve the above technical objectives, the technical solution adopted by the present invention is:

[0008] A multi-cavity gallium oxide epitaxial thin film growth automated mass production device includes a slide rail, a substrate mounting structure, a substrate to be deposited, several HVPE semiconductor epitaxial growth devices, a transfer structure and an MOCVD epitaxial growth device. The substrate mounting structure is slidably mounted on the slide rail. Several ceramic supports are provided on the substrate mounting structure. The substrate to be deposited can be placed on the ceramic supports. The HVPE semiconductor epitaxial growth device is located above the slide rail. The substrate mounting structure can drive the substrate to be deposited to move directly below the HVPE semiconductor epitaxial growth device. A growth gas nozzle is provided at the lower end of the HVPE semiconductor epitaxial growth device. The growth gas in the HVPE semiconductor epitaxial growth device can be ejected from the growth gas nozzle to perform preliminary deposition on the upper surface of the substrate to be deposited. The transfer structure can remove the substrate to be deposited from the ceramic support and place the substrate to be deposited in the MOCVD epitaxial growth device. The MOCVD epitaxial growth device can perform secondary deposition on the substrate to be deposited.

[0009] To optimize the technical solution, the present invention is further improved as follows:

[0010] The substrate mounting structure also includes a ceramic frame fixing piece, which is fixed on the ceramic bracket. Sliding holes are formed at both ends of the ceramic frame fixing piece, and the sliding holes are sleeved on the slide rail, so that the ceramic frame fixing piece is limited on the slide rail and can slide along the slide rail.

[0011] The HVPE semiconductor epitaxial growth device includes an HVPE growth device body, a gallium chloride inlet pipe and an oxygen inlet pipe. An HVPE heating device is provided in the HVPE growth device body. Both the gallium chloride inlet pipe and the oxygen inlet pipe are connected to the HVPE growth device body. A growth gas nozzle is provided at the lower end of the HVPE growth device body. The HVPE heating device can heat the gas in the HVPE growth device body, and the heated gas can be ejected from the growth gas nozzle.

[0012] The HVPE semiconductor epitaxial growth device further comprises a mounting bracket, which is fixedly arranged beside the slide rail, and the HVPE growth device body is mounted on the mounting bracket.

[0013] The transfer structure is a manipulator, which includes a manipulator arm and a clamp. The manipulator arm can move under the action of a drive motor, and the clamp can clamp the substrate to be deposited and move the substrate to be deposited from the ceramic support to the MOCVD epitaxial growth device.

[0014] The multi-cavity gallium oxide epitaxial thin film functional component growth device also includes a transfer chamber, and a slide rail is arranged around the transfer chamber. Correspondingly, the HVPE semiconductor epitaxial growth device is located around the transfer chamber. A graphite disk is arranged in the transfer chamber, and multiple deposition substrates can be arranged and placed on the graphite disk.

[0015] The MOCVD epitaxial growth device includes an MOCVD growth chamber, which has a heating structure and a deposition gas nozzle. The robotic arm can move under the action of a drive motor, and the clamp can clamp the graphite disk in the transfer chamber and place the graphite disk in the MOCVD growth chamber. The deposition gas nozzle in the MOCVD growth chamber is facing the deposition substrate on the graphite disk. The heating structure is used to heat and keep the MOCVD growth chamber warm.

[0016] There are multiple substrate mounting structures, each substrate mounting structure corresponds to an HVPE semiconductor epitaxial growth device, and each substrate mounting structure is provided with four ceramic supports; the ceramic supports in the same substrate mounting structure are integrally formed.

[0017] A method for using a multi-cavity gallium oxide epitaxial thin film growth automated mass production device, using the multi-cavity gallium oxide substrate growth device described above, specifically comprising the following steps:

[0018] Step 1: Place the substrate to be deposited on the ceramic support, slide the substrate mounting structure on the slide rail, and place the substrate to be deposited below the growth gas nozzle of the HVPE growth device body;

[0019] Step 2: The HVPE heating device in the HVPE growth device is started, gallium chloride gas is input into the gallium chloride inlet pipe, and oxygen gas is input into the oxygen inlet pipe. The heated gallium chloride and oxygen mixture is ejected from the growth gas nozzle to grow the first gallium oxide layer on the deposition substrate;

[0020] Step 3: The transfer structure removes the substrate to be deposited on which the first gallium oxide layer is grown from the ceramic holder and places it on the graphite disk in the transfer chamber. After a sufficient number of substrates to be deposited are placed on the graphite disk, the surface of the substrate to be deposited is cleaned with organic and inorganic acids and bases;

[0021] Step 4: The transfer structure moves the graphite disk as a whole to the MOCVD growth chamber. The MOCVD growth chamber activates the heating structure to keep the graphite disk as a whole in a high-temperature constant temperature state. The deposition gas nozzle sprays trimethylgallium gas and oxygen toward the substrate to be deposited on the surface of the graphite disk, forming a second gallium oxide layer on the substrate to be deposited.

[0022] Step 5: Adjust the growth temperature in the MOCVD growth chamber, introduce argon gas as a protective atmosphere into the MOCVD growth chamber through a deposition gas nozzle, and then introduce organic metal trimethylindium, organic metal tetradimethylaminotin and oxygen to form an indium tin oxide thin film main layer on the substrate to be deposited, thereby obtaining a gallium oxide epitaxial thin film functional component;

[0023] Step 6: Take out the epitaxial thin film functional component from the MOCVD growth chamber.

[0024] Four ceramic brackets are provided in each substrate mounting structure, and a substrate to be deposited is provided on each ceramic bracket. In step 2, the HVPE semiconductor epitaxial growth device grows the first gallium oxide layer on the substrate to be deposited for 20 minutes. In steps 4 and 5, the MOCVD epitaxial growth device grows the second gallium oxide layer and the main layer of the indium tin oxide thin film on the substrate to be deposited for 2 hours.

[0025] Beneficial effects of the present invention:

[0026] 1. The present invention utilizes the fast growth rate of the HVPE equipment to perform preliminary growth on the gallium oxide epitaxial thin film functional components, and then utilizes the high growth quality of the MOCVD equipment to perform subsequent growth on the gallium oxide epitaxial thin film functional components, thereby effectively improving the production efficiency of the gallium oxide epitaxial thin film functional components without affecting the quality of the gallium oxide epitaxial thin film functional components.

[0027] 2. The present invention corresponds to one MOCVD epitaxial growth device by multiple HVPE devices, rationally plans the growth time of different devices, and uses a robot to transfer the substrate between the HVPE device and the MOCVD epitaxial growth device, realizing an automated process of directly converting the substrate to epitaxial growth with high efficiency.

[0028] 3. The present invention provides a guide rail to facilitate the sliding of the substrate mounting structure on the guide rail. The guide rail provides stable physical support to ensure that the substrate moves along a specific path during the reaction process to achieve precise vapor deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a schematic structural diagram of a multi-cavity gallium oxide epitaxial thin film growth automated mass production device of the present invention;

[0030] Figure 2 It is a schematic diagram of the disassembled HVPE semiconductor epitaxial growth device and substrate mounting structure;

[0031] Figure 3 It is a schematic diagram of the MOCVD epitaxial growth device and transfer chamber;

[0032] Figure 4 yes Figure 3 Top view of .

[0033] The figures are marked as follows: slide rail 1, substrate mounting structure 2, ceramic bracket 21, ceramic bracket fixing plate 22, sliding hole 23, substrate to be deposited 3, HVPE semiconductor epitaxial growth device 4, HVPE growth device main body 41, gallium chloride inlet pipe 42, oxygen inlet pipe 43, mounting bracket 44, transfer structure 5, robotic arm 51, clamp 52, MOCVD epitaxial growth device 6, MOCVD growth chamber 61, transfer chamber 7, graphite disk 71. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solutions and advantages of this application more clearly understood, the present application is described and illustrated below in conjunction with the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely used to explain this application and are not intended to limit this application. Based on the embodiments provided in this application, all other embodiments obtained by those of ordinary skill in the art without making any creative efforts are within the scope of protection of this application.

[0035] Obviously, the drawings described below are merely examples or embodiments of the present application. Those skilled in the art can, without inventive effort, apply the present application to other similar scenarios based on these drawings. Furthermore, it is also understood that, although the effort involved in such a development process may be complex and lengthy, for those skilled in the art related to the content disclosed in this application, changes in design, manufacturing, or production based on the technical content disclosed in this application are merely conventional technical means and should not be construed as an insufficiency of the content disclosed in this application.

[0036] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it refer to independent or alternative embodiments that are mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments unless there is a conflict.

[0037] Unless otherwise defined, the technical or scientific terms used in this application should have the ordinary meaning understood by a person of ordinary skill in the technical field to which this application belongs. The words "a", "an", "a", "the" and the like used in this application do not indicate a limit on quantity and may indicate the singular or plural. The terms "include", "comprise", "have" and any variations thereof used in this application are intended to cover non-exclusive inclusions; for example, a process, method, system, product or device that includes a series of steps or units (units) is not limited to the listed steps or units, but may also include steps or units that are not listed, or may also include other steps or units that are inherent to these processes, methods, products or devices. The words "connect", "connected", "coupled" and the like used in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The words "multiple" / "several" used in this application refer to two or more. "And / or" describes the association relationship between associated objects, indicating that three relationships can exist. For example, "A and / or B" can mean: A exists alone, A and B exist at the same time, or B exists alone. The character " / " generally indicates that the objects before and after are in an "or" relationship. The terms "first", "second", "third", etc. involved in this application are only used to distinguish similar objects and do not represent a specific order for the objects.

[0038] like Figure 1 As shown, the multi-cavity gallium oxide epitaxial thin film functional component growth device of the present invention includes a slide rail 1, a substrate mounting structure 2, a substrate to be deposited 3, an HVPE semiconductor epitaxial growth device 4, a transfer structure 5, an MOCVD epitaxial growth device 6 and a transfer chamber 7.

[0039] The slide rail 1 forms an approximately closed ring, so that each position of the slide rail 1 is close to the MOCVD epitaxial growth device 6 and the transfer chamber 7 located in the middle of the ring.

[0040] The substrate mounting structure 2 includes a ceramic bracket 21 and a ceramic bracket fixing plate 22. There are 4 substrate mounting structures 2, which are evenly distributed on the slide rail 1. The ceramic bracket fixing plate 22 is fixed to the ceramic bracket 21 by welding or bolts. There are 16 ceramic brackets 21. Each substrate mounting structure 2 has 4 ceramic brackets 21. Each ceramic bracket 21 can be placed on a substrate 3 to be deposited. The number of ceramic bracket fixing plates 22 is determined according to actual conditions. The ceramic bracket fixing plate 22 is set on the slide rail 1 through the sliding hole 23. The function of the ceramic bracket fixing plate 22 is to carry the ceramic bracket 21 to slide on the slide rail 1, while also ensuring that the ceramic bracket 21 cannot fall off the slide rail 1.

[0041] The HVPE semiconductor epitaxial growth device 4 is an existing device used for growing substrates with a short growth time. The upper end of the HVPE semiconductor epitaxial growth device 4 is provided with a gallium chloride inlet pipe 42, an oxygen inlet pipe 43, and a pipe opening for a flushing gas inlet pipe. The HVPE growth device body 41 is internally provided with a heating device for heating the passing gas. The gallium chloride inlet pipe 42 and the oxygen inlet pipe 43 are both connected to the HVPE growth device body 41. The lower end of the HVPE growth device body 41 is provided with a growth gas nozzle. Gallium chloride and oxygen are mixed at the growth gas nozzle and sprayed toward the substrate below the HVPE growth device body 41, thereby growing the first gallium oxide layer on the substrate.

[0042] There are four transfer structures 5 , one for each HVPE semiconductor epitaxial growth device 4 . The transfer structure 5 can be a SCARA robot or a Delta robot for transferring the substrate 3 to be deposited. Each robot has a robot arm 51 and a gripper 52 structure.

[0043] The MOCVD epitaxial growth device 6 is used to deposit high-quality growth layers. Compared with the HVPE semiconductor epitaxial growth device 4, the MOCVD epitaxial growth device 6 has a larger space and can deposit on multiple substrates at the same time. The MOCVD epitaxial growth device 6 includes a MOCVD growth chamber 61, which has a heating structure and a deposition gas nozzle.

[0044] The transfer chamber 7 is a chamber for substrate transfer. The HVPE semiconductor epitaxial growth device 4 can only deposit on one substrate 3 to be deposited at a time, while the MOCVD epitaxial growth device 6 can deposit on multiple substrates at a time. Therefore, the substrates deposited by the HVPE semiconductor epitaxial growth device 4 need to be concentrated, cleaned, and then sent to the MOCVD epitaxial growth device 6.

[0045] The present invention also provides a method for using a multi-cavity gallium oxide epitaxial thin film growth automated mass production device, comprising the following steps:

[0046] Step 1: Place the substrate 3 to be deposited on the ceramic support 21, slide the substrate mounting structure 2 on the slide rail 1, and place the substrate 3 to be deposited below the growth gas nozzle of the HVPE growth device body 41;

[0047] Step 2: The HVPE heating device in the HVPE growth device body 41 is started, gallium chloride gas is input into the gallium chloride inlet pipe 42, and oxygen is input into the oxygen inlet pipe 43. The heated gallium chloride and oxygen mixture is ejected from the growth gas nozzle to grow the first gallium oxide layer on the deposition substrate 3. Specifically, gallium hydride decomposes into gallium atoms and hydrogen atoms. The gallium atoms are deposited on the substrate and react with oxygen atoms on the substrate to form gallium oxide with a film thickness of 10-50 microns. The process runs for 20 minutes, which includes the time for heating and cooling and removing the film.

[0048] Step 3: The transfer structure 5 removes the substrate 3 to be deposited, on which the first gallium oxide layer is grown, from the ceramic holder 21 and places it on the graphite disk 71 in the transfer chamber 7. After 16 substrates 3 to be deposited are placed on the graphite disk 71, the surface of the substrate 3 to be deposited is cleaned with organic and inorganic acids and bases.

[0049] In step 4, the transfer structure 5 moves the graphite disk 71 as a whole to the MOCVD growth chamber 61. The heating structure of the MOCVD growth chamber 61 is turned on to keep the graphite disk 71 as a whole in a high-temperature constant temperature state. The deposition gas nozzle sprays trimethylgallium gas and oxygen toward the substrate 3 to be deposited on the surface of the graphite disk 71, thereby forming a second gallium oxide layer on the substrate 3 to be deposited. The main advantage of this process is the high control accuracy and uniformity. It can perform fine growth on the gallium oxide layer grown by HVPE, repair or reduce defects left in the HVPE stage, and improve the morphology and optical quality of the gallium oxide layer.

[0050] Step 5: Adjust the growth temperature in the MOCVD growth chamber 61, introduce argon gas as a protective atmosphere into the MOCVD growth chamber 61 through a deposition gas nozzle, and then introduce organic metal trimethylindium, organic metal tetrakis(dimethylamino)tin, and oxygen to form an indium tin oxide thin film main layer on the substrate 3 to be deposited, thereby obtaining a gallium oxide epitaxial thin film functional component;

[0051] Step 6: Take the epitaxial thin film functional component out of the MOCVD growth chamber 61. The epitaxial thin film functional component has a grain size of 50-100 nm and a relatively rough surface morphology.

[0052] In step 4 and step 5, the MOCVD epitaxial growth device 6 grows the second gallium oxide layer and the main indium tin oxide thin film layer on the substrate 3 to be deposited for 2 hours.

[0053] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions based on the principles of the present invention are within the scope of protection of the present invention. It should be noted that for those skilled in the art, various improvements and modifications that do not depart from the principles of the present invention should be considered within the scope of protection of the present invention.

Claims

1. A multi-cavity gallium oxide epitaxial thin film growth automated mass production device, characterized in that: The invention comprises a slide rail (1), a substrate mounting structure (2), a substrate to be deposited (3), a plurality of HVPE semiconductor epitaxial growth devices (4), a transfer structure (5) and an MOCVD epitaxial growth device (6), wherein the substrate mounting structure (2) is slidably mounted on the slide rail (1), a plurality of ceramic supports (21) are provided on the substrate mounting structure (2), the substrate to be deposited (3) can be placed on the ceramic supports (21), the HVPE semiconductor epitaxial growth device (4) is located above the slide rail (1), and the substrate mounting structure (2) can drive the substrate to be deposited (3) to move. Directly below the HVPE semiconductor epitaxial growth device (4), a growth gas nozzle is provided at the lower end of the HVPE semiconductor epitaxial growth device (4), and the growth gas in the HVPE semiconductor epitaxial growth device (4) can be ejected from the growth gas nozzle to perform preliminary deposition on the upper surface of the substrate to be deposited (3). The transfer structure (5) can remove the substrate to be deposited (3) from the ceramic support (21) and place the substrate to be deposited (3) in the MOCVD epitaxial growth device (6), and the MOCVD epitaxial growth device (6) can perform secondary deposition on the substrate to be deposited (3).

2. The multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 1, characterized in that: The substrate mounting structure (2) further includes a ceramic frame fixing piece (22), the ceramic frame fixing piece (22) is fixed on the ceramic bracket (21), and sliding holes (23) are formed at both ends of the ceramic frame fixing piece (22), and the sliding holes (23) are sleeved on the slide rail (1), so that the ceramic frame fixing piece (22) is limited on the slide rail (1) and can slide along the slide rail (1).

3. The multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 2, characterized in that: The HVPE semiconductor epitaxial growth device (4) comprises an HVPE growth device body (41), a gallium chloride inlet pipe (42) and an oxygen inlet pipe (43); an HVPE heating device is provided in the HVPE growth device body (41); the gallium chloride inlet pipe (42) and the oxygen inlet pipe (43) are both connected to the HVPE growth device body (41); a growth gas nozzle is provided at the lower end of the HVPE growth device body (41); the HVPE heating device can heat the gas in the HVPE growth device body (41), and the heated gas can be ejected from the growth gas nozzle.

4. The multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 3, characterized in that: The HVPE semiconductor epitaxial growth device (4) further comprises a mounting bracket (44), wherein the mounting bracket (44) is fixedly arranged beside the slide rail (1), and the HVPE growth device body (41) is mounted on the mounting bracket (44).

5. The multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 4, characterized in that: The transfer structure (5) is a manipulator, which includes a manipulator arm (51) and a clamping claw (52). The manipulator arm (51) can move under the action of a drive motor, and the clamping claw (52) can clamp the substrate to be deposited (3) and move the substrate to be deposited (3) from the ceramic support (21) to the MOCVD epitaxial growth device (6).

6. The multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 5, characterized in that: The invention also includes a transfer chamber (7), wherein the slide rail (1) is arranged around the transfer chamber (7), and correspondingly, the HVPE semiconductor epitaxial growth device (4) is located around the transfer chamber (7). A graphite disk (71) is arranged in the transfer chamber (7), and a plurality of deposition substrates (3) can be arranged and placed on the graphite disk (71).

7. The multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 6, characterized in that: The MOCVD epitaxial growth device (6) includes a MOCVD growth chamber (61), the MOCVD growth chamber (61) has a heating structure and a deposition gas nozzle, the mechanical arm (51) can move under the action of a driving motor, the clamping claw (52) can clamp the graphite disk (71) in the transfer chamber (7), and place the graphite disk (71) in the MOCVD growth chamber (61), the deposition gas nozzle in the MOCVD growth chamber (61) is facing the deposition substrate (3) on the graphite disk (71), and the heating structure is used to heat and keep the MOCVD growth chamber (61) warm.

8. The multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 1, characterized in that: There are multiple substrate mounting structures (2), each substrate mounting structure (2) corresponds to an HVPE semiconductor epitaxial growth device (4), and each substrate mounting structure (2) is provided with four ceramic brackets (21); the ceramic brackets (21) in the same substrate mounting structure (2) are integrally formed.

9. A method for using a multi-cavity gallium oxide epitaxial thin film growth automated mass production device, characterized by: The multi-cavity gallium oxide substrate growth device according to claim 7 is used, and specifically comprises the following steps: Step 1: placing a substrate to be deposited (3) on a ceramic support (21), sliding a substrate mounting structure (2) on a slide rail (1), and placing the substrate to be deposited (3) below a growth gas nozzle of a main body (41) of an HVPE growth device; Step 2: The HVPE heating device in the HVPE growth device body (41) is started, gallium chloride gas is input through the gallium chloride inlet pipe (42), oxygen is input through the oxygen inlet pipe (43), and the heated gallium chloride and oxygen mixed gas is ejected from the growth gas nozzle to grow the first gallium oxide layer on the deposition substrate (3); Step 3: The transfer structure (5) removes the substrate to be deposited (3) on which the first gallium oxide layer is grown from the ceramic support (21) and places it on the graphite disk (71) located in the transfer chamber (7). After a sufficient number of substrates to be deposited (3) are placed on the graphite disk (71), the surface of the substrate to be deposited (3) is cleaned with organic and inorganic acids and bases; Step 4: The transfer structure (5) moves the graphite disk (71) as a whole to the MOCVD growth chamber (61), and the MOCVD growth chamber (61) turns on the heating structure to keep the graphite disk (71) as a whole in a high-temperature constant-temperature state. The deposition gas nozzle sprays trimethyl gallium gas and oxygen toward the substrate to be deposited (3) on the surface of the graphite disk (71), thereby forming a second gallium oxide layer on the substrate to be deposited (3); Step 5: adjusting the growth temperature in the MOCVD growth chamber (61), introducing argon gas as a protective atmosphere into the MOCVD growth chamber (61) through a deposition gas nozzle, and then introducing organic metal trimethylindium, organic metal tetrakis(dimethylamino)tin and oxygen to form an indium tin oxide thin film main layer on the substrate to be deposited (3), thereby obtaining a gallium oxide epitaxial thin film functional component; Step 6: Take out the epitaxial thin film functional component from the MOCVD growth chamber (61).

10. The method for using the multi-cavity gallium oxide epitaxial thin film growth automated mass production device according to claim 9, characterized in that: Four ceramic supports (21) are provided in each substrate mounting structure (2), and a substrate to be deposited (3) is provided on each ceramic support (21). In step 2, the HVPE semiconductor epitaxial growth device (4) grows a first gallium oxide layer on a substrate to be deposited (3) for 20 minutes. In steps 4 and 5, the MOCVD epitaxial growth device (6) grows a second gallium oxide layer and an indium tin oxide thin film main layer on the substrate to be deposited (3) for 2 hours.

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