Chamfering equipment and method

Abstract

The invention relates to the field of wafer processing, in particular to chamfering equipment and a chamfering method, and the chamfering equipment comprises a chamfering mechanism, the chamfering mechanism comprises a first grinding wheel, a second grinding wheel, a third grinding wheel and a fourth grinding wheel, the first grinding wheel is provided with a transversely arranged first rotating shaft, and the first grinding wheel can rotate around the first rotating shaft; the first grinding wheel is used for grinding the edge of the wafer; the carrier mechanism is located on one side of the chamfering mechanism, and the carrier mechanism comprises a base; the rotary table is used for bearing the wafer and driving the wafer to rotate, so that the shaft side of the wafer is in contact with the first grinding wheel to realize chamfering; and the blocking mechanism comprises a nozzle, the nozzle is located between the rotary table and the first grinding wheel, the nozzle is connected to the base, and the nozzle is used for facing the lower surface of the wafer to form an air screen for isolating the rotary table from the first grinding wheel. The technical problem that the production efficiency and the production quality of the chamfering equipment are low is solved, and the technical effect of improving the production efficiency and the production quality of the chamfering equipment is achieved.

Description

Technical Field

[0001] The present application relates to the field of wafer processing, and in particular to a chamfering device and method. Background Art

[0002] Wafer chamfering equipment is a key component in semiconductor manufacturing, used to precisely chamfer the edges of wafers. The chamfering process aims to remove burrs and damage from the wafer edge, thereby improving the wafer's mechanical strength and the yield rate for subsequent processing.

[0003] In the prior art, during the chamfering process, a traditional wafer chamfering device places the wafer on a turntable, which drives the wafer to rotate, causing the entire circumference of the wafer to be in contact with the grinding wheel for grinding, thereby completing the chamfering of the entire circumference of the wafer. However, during the contact grinding process between the wafer and the grinding wheel, a large amount of fine debris is generated. Due to the high-speed rotation and grinding force, these debris are often randomly splashed onto the turntable surface or the tiny gap between the turntable and the wafer. The adhesion of the debris not only increases the difficulty of cleaning the turntable, but more importantly, the debris embedded in the gap between the wafer and the turntable can easily scratch the lower surface of the wafer during subsequent processing, causing wafer damage. This reduces the stability and service life of the equipment, thereby increasing maintenance costs and downtime, and greatly reducing the production efficiency and production quality of the chamfering equipment.

[0004] Therefore, the technical problem of the prior art is that the production efficiency of the chamfering equipment is low. Summary of the Invention

[0005] The present application provides a chamfering device and method, which solves the technical problems of low production efficiency and production quality of the chamfering device, and achieves the technical effect of improving the production efficiency and production quality of the chamfering device.

[0006] On the one hand, the present application provides a chamfering device, which adopts the following technical solution:

[0007] A chamfering device includes: a chamfering mechanism, the chamfering mechanism including: a first grinding wheel, the first grinding wheel having a transversely arranged first rotating shaft, the first grinding wheel being rotatable about the first rotating shaft; the first grinding wheel being used to grind the edge of a wafer; a carrier mechanism, the carrier mechanism being located on one side of the chamfering mechanism, the carrier mechanism including: a base; a turntable rotatably connected to the base, the turntable having a vertically arranged axial direction and being rotatable about the vertically arranged axial direction, the turntable having an adsorption function, the turntable being used to carry a wafer and drive the wafer to rotate so that the axial side of the wafer contacts the first grinding wheel to achieve chamfering; wherein the wafer contacts the first grinding wheel to form a first contact area, the chamfering mechanism being movable relative to the carrier mechanism to adjust the formation position of the first contact area on the wafer edge; and a barrier mechanism, the barrier mechanism including: a nozzle, the nozzle being located between the turntable and the first grinding wheel, the nozzle being connected to the base, the nozzle being used to face the lower surface of the wafer to form an air screen that isolates the turntable from the first grinding wheel.

[0008] In this arrangement, a barrier mechanism is provided between the first grinding wheel and the turntable. The barrier mechanism is used to blow air toward the lower surface of the wafer so that an air screen is formed between the turntable and the first grinding wheel to isolate debris. Due to the formation of the air screen, debris formed by grinding the wafer with the first grinding wheel is prevented from splashing onto the lower surface of the wafer and between the wafer and the turntable, thereby protecting the wafer from contamination and damage.

[0009] Preferably, the jetting direction of the nozzle is inclined toward one side of the first grinding wheel, so that the air screen is inclined upward.

[0010] With this arrangement, the nozzle's spray direction is tilted toward one side of the first grinding wheel, forming an upward-slanting air screen. This not only enhances the isolation effect of the air screen, but also better guides the discharge of debris, reduces the retention of debris on the lower surface of the wafer, and further protects the wafer from damage.

[0011] Preferably, the chamfering mechanism further comprises:

[0012] a second grinding wheel, the second grinding wheel having a transversely arranged second rotation axis, the second grinding wheel being capable of rotating about the second rotation axis; the second grinding wheel being located below the first grinding wheel, a working space being formed between the second grinding wheel and the first grinding wheel, the wafer being located within the working space and being in contact with the first and second grinding wheels for grinding to form a chamfer; the wafer being in contact with the second grinding wheel forming a second contact area, the chamfering mechanism being movable relative to the carrier mechanism to adjust the formation position of the second contact area at the edge of the wafer;

[0013] Wherein, the first grinding wheel and the second grinding wheel are not in the same vertical space.

[0014] In this arrangement, a second grinding wheel is added to the basis of the first grinding wheel to form two upper and lower grinding positions, which improves the chamfering efficiency and quality. At the same time, the second grinding wheel and the first grinding wheel are not in the same vertical space, and can grind the edge of the wafer at full angles, avoiding mutual interference and ensuring the stable operation of the equipment. Among them, it can be understood that the first grinding wheel and the second grinding wheel are centrally symmetrical compared to the position of the wafer, so that the force exerted by the first grinding wheel on the wafer and the force exerted by the second grinding wheel on the wafer offset each other, which is beneficial to uniform force grinding of the wafer and improves the quality of wafer chamfering.

[0015] Preferably, a plurality of the nozzles are provided, and the plurality of nozzles are arranged in a straight line. The projection length of the plurality of nozzles on the wafer is L1, and the arrangement length of the plurality of nozzles is L2, where L1<L2.

[0016] In this arrangement, multiple nozzles are arranged in a straight line, and the arrangement length L2 is greater than the projection length L1 of the nozzle on the wafer, so that the nozzles can cover a wider area of ​​the lower surface of the wafer, thereby more effectively isolating the debris generated during the grinding process of the lower surface of the wafer.

[0017] Preferably, both ends of the arrangement of the nozzles are located outside the projection of the nozzles on the wafer.

[0018] In this arrangement, the nozzle projected outside the wafer is used to blow air upward. Since the arrangement length of the nozzle exceeds the outside of the wafer, the nozzle passes over the edge of the wafer upward. Due to the Bernoulli effect, an airflow is formed outward above the wafer, which can drive the debris above the wafer to move and discharge it; further, under the rotation of the wafer, the wafer drives the debris to move, further improving the debris removal effect, that is, the debris can move upward with the nozzle and will not stay on the wafer to prevent damage to the wafer.

[0019] Preferably, the projection of the nozzle on the edge of the wafer is defined to have a first position and a second position, and the rotation direction of the wafer is from the first position to the second position;

[0020] A collecting mechanism is provided above the second position, and is used to collect debris located on the upper surface of the wafer.

[0021] With this arrangement, the airflow formed by the Bernoulli principle drives the debris on the upper surface of the wafer. At the same time, the rotation of the wafer itself further drives the debris on the upper surface of the wafer to move, move upward with the airflow formed by the nozzle, and are collected by the collection mechanism, thereby achieving efficient processing of debris.

[0022] Preferably, the nozzle projected outside the wafer forms an air flow channel upward, and the nozzle supplies air into the air flow channel to carry the debris; the collection mechanism includes:

[0023] The electrostatic component is arranged in the air flow channel and has static electricity to absorb debris in the air flow.

[0024] With this arrangement, flying debris is captured through the electrostatic effect, thereby improving the accuracy of debris capture, and the electrostatic structure is simple and low in cost.

[0025] Preferably, the distance between the nozzle and the lower surface of the wafer is between 0.5 cm and 1.0 cm.

[0026] With this arrangement, the distance between the nozzle and the wafer is controlled within an effective range, which is conducive to the nozzle acting accurately and directionally on the lower surface of the wafer, preventing airflow turbulence, and improving the lower surface isolation effect and debris removal effect.

[0027] Preferably, the chamfering mechanism also includes a drive assembly, which is provided in two groups. The two groups of drive assemblies are respectively connected to and act on the first grinding wheel and the second grinding wheel, so that the first grinding wheel and the second grinding wheel can move in a first direction, a second direction and a third direction, wherein the first direction, the second direction and the third direction are perpendicular to each other.

[0028] This arrangement enables the first and second grinding wheels to move in three perpendicular directions, enabling precise adjustment of the chamfer position of the wafer edge. This design improves chamfering accuracy and flexibility, meeting the chamfering requirements of wafers of varying sizes and shapes.

[0029] Preferably, the nozzle is movably connected to the base, and the barrier mechanism further comprises:

[0030] An elastic member is connected between the nozzle and the base. The elastic member can drive the nozzle to float up or sink through elastic potential energy. A force-bearing area is formed between the elastic member and the base. A pressure sensor is provided on the force-bearing area. The pressure sensor is used to obtain the force condition of the elastic member.

[0031] This setting allows the nozzle to float up and down according to actual conditions to adapt to wafers at different heights or positions; at the same time, the setting of the pressure sensor can monitor the force conditions of the elastic part in real time, providing strong support for the precise adjustment of the grinding wheel position.

[0032] Preferably, the base has a bracket for supporting the nozzle; the elastic member is an elastic rod, the first end of the elastic rod is connected to the nozzle, the second end of the elastic rod is connected to the bracket, the force area is formed between the second end of the elastic rod and the bracket, and the pressure sensor is arranged between the elastic rod and the bracket.

[0033] Such a setting, by specifically describing the connection method of the elastic member as an elastic rod, a bracket and a pressure sensor, realizes precise control and monitoring of the floating state of the nozzle, improves the stability and reliability of the equipment, and ensures the stable improvement of the chamfering quality.

[0034] Preferably, the base has a nozzle-guiding sleeve; the elastic member is a spring, which is arranged in the sleeve, the first end of the spring is connected to the nozzle, the second end of the spring is connected to the base, the force-bearing area is formed between the second end of the spring and the base, and the pressure sensor is arranged between the spring and the base.

[0035] With this arrangement, nozzle floating and force monitoring are achieved through a combination of a spring and a sleeve. This design can also achieve real-time monitoring of the nozzle's up and down floating and force conditions, providing strong support for precise adjustment of the grinding wheel position. At the same time, the combination of a spring and a sleeve also has the advantages of a simple structure and easy maintenance.

[0036] It can be understood that when the force on the pressure sensor increases, it indicates that the nozzle is pressed down, and the reason for the nozzle being pressed down is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is lower than the wafer, and the first grinding wheel presses down the wafer, resulting in a smaller distance between the wafer and the nozzle. In this way, the first grinding wheel located on the upper part of the wafer and the wafer are over-ground; the second grinding wheel located below the wafer and the wafer are under-ground; when the force on the pressure sensor decreases, it indicates that the nozzle is floating, and the reason for the nozzle being floating is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is higher than the wafer, and the second grinding wheel pushes the wafer, resulting in a larger distance between the wafer and the nozzle. In this way, the first grinding wheel located on the upper part of the wafer and the wafer are under-ground; the second grinding wheel located below the wafer and the wafer are over-ground; the force on the pressure sensor is obtained, and the wafer is analyzed to be higher or lower, and the position of the first grinding wheel and the second grinding wheel can be adjusted accordingly to match the position of the wafer with the first grinding wheel and the second grinding wheel to prevent insufficient or excessive grinding.

[0037] On the other hand, the present application provides a chamfering method, which adopts the following technical solution:

[0038] A chamfering method, applied to the chamfering equipment, includes: causing the nozzle to spray air toward the lower surface of the wafer, forming an air screen between the turntable and the first grinding wheel and / or the second grinding wheel to prevent grinding debris from flying into between the lower surface of the wafer and the turntable.

[0039] With such an arrangement, the chamfering method forms an air screen by ejecting air toward the lower surface of the wafer through the nozzle, thereby effectively isolating the lower surface of the wafer and the turntable from being contaminated by grinding debris.

[0040] Preferably, the nozzle is movably connected to the base, and the barrier mechanism further comprises: an elastic member connected between the nozzle and the base, the elastic member being capable of driving the nozzle to float up or sink through elastic potential energy, a force-bearing area being formed between the elastic member and the base, a pressure sensor being provided on the force-bearing area, and the pressure sensor being used to obtain a force condition of the elastic member;

[0041] The first grinding wheel and the second grinding wheel are driven to float or sink based on the force applied to the elastic member so that the upper and lower forces on the edge of the wafer are balanced.

[0042] This setup allows for real-time monitoring and precise adjustment of the nozzle's floating state and force, ensuring balanced force on the wafer edge during chamfering, further improving chamfering accuracy and stability. It also facilitates timely detection and resolution of equipment failures, enhancing equipment reliability and service life.

[0043] It can be understood that when the force on the pressure sensor increases, it indicates that the nozzle is pressed down, and the reason for the nozzle being pressed down is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is lower than the wafer, and the first grinding wheel presses down the wafer, resulting in a smaller distance between the wafer and the nozzle. In this way, the first grinding wheel located on the upper part of the wafer and the wafer are over-ground; the second grinding wheel located below the wafer and the wafer are under-ground; when the force on the pressure sensor decreases, it indicates that the nozzle is floating, and the reason for the nozzle being floating is that the position of the grinding mechanism (the first grinding wheel and the second grinding wheel) is higher than the wafer, and the second grinding wheel pushes the wafer, resulting in a larger distance between the wafer and the nozzle. In this way, the first grinding wheel located on the upper part of the wafer and the wafer are under-ground; the second grinding wheel located below the wafer and the wafer are over-ground; the force on the pressure sensor is obtained, and the wafer is analyzed to be higher or lower, and the position of the first grinding wheel and the second grinding wheel can be adjusted accordingly to match the position of the wafer with the first grinding wheel and the second grinding wheel to prevent insufficient or excessive grinding.

[0044] In summary, this application includes at least one of the following beneficial technical effects:

[0045] The chamfering equipment proposed in this application is equipped with a barrier mechanism between the first grinding wheel and the turntable. The barrier mechanism is used to blow air toward the lower surface of the wafer so that an air screen is formed between the turntable and the first grinding wheel to isolate debris. Due to the formation of the air screen, debris formed by grinding the wafer with the first grinding wheel is prevented from splashing onto the lower surface of the wafer and between the wafer and the turntable, thereby protecting the wafer from contamination and damage. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 This is a schematic diagram of the first type of the spacing mechanism in the chamfering equipment described in this application;

[0047] Figure 2This is a first schematic diagram of the chamfering process described in this application;

[0048] Figure 3 This is a second schematic diagram of the chamfering process described in this application;

[0049] Figure 4 is a schematic diagram of the grinding wheel of the chamfering equipment described in this application;

[0050] Figure 5 This is a second schematic diagram of the spacing mechanism in the chamfering device described in this application;

[0051] Figure 6 is a schematic diagram of the nozzle of the chamfering device described in this application;

[0052] Figure 7 is a schematic diagram of the operation of the nozzle of the chamfering device described in this application;

[0053] Figure 8 This is a three-dimensional diagram of the nozzle operation of the chamfering device described in this application;

[0054] Figure 9 This is a first schematic diagram of the nozzle feedback of the chamfering device described in this application;

[0055] Figure 10 This is a second schematic diagram of the nozzle feedback of the chamfering device described in this application.

[0056] Explanation of the accompanying drawings: 100, chamfering mechanism; 110, first grinding wheel; 120, second grinding wheel; 200, carrier mechanism; 210, base; 220, turntable; 230, bracket; 240, sleeve; 250, force area; 300, barrier mechanism; 310, nozzle; 311, air screen; 320, elastic member; 321, elastic rod; 322, spring; 330, pressure sensor; 340, first position; 350, second position; 400, wafer; 410, first contact area; 420, second contact area; 500, debris; 600, collecting mechanism. DETAILED DESCRIPTION

[0057] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application include direct and indirect connections (couplings) unless otherwise specified. In the description of this application, it should be understood that the orientations or positional relationships indicated by the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0058] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0059] The embodiments of the present application provide a chamfering device and a chamfering method, which solve the technical problems of low production efficiency and production quality of the chamfering device, and achieve the technical effect of improving the production efficiency and production quality of the chamfering device.

[0060] In order to better understand the above technical solution, the following will be described in detail with reference to the accompanying drawings and specific implementation methods. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0061] Wafer 400 chamfering equipment plays a crucial role in semiconductor manufacturing. It operates by securing wafer 400 on a rotating turntable 220 and finely chamfering the edges of wafer 400 using a grinding wheel. This process not only enhances the appearance of wafer 400 but, more importantly, plays a crucial role in improving wafer 400 edge quality, reducing chip breakage due to mechanical stress, optimizing contact area during packaging, and ensuring wafer 400 stability and reliability.

[0062] Traditional wafer 400 chamfering equipment uses a turntable 220 to rotate and drive the wafer 400, so that the entire circumference of the wafer 400 is in contact with the grinding wheel for grinding, thereby achieving chamfering. However, this process faces a series of challenges in actual operation, especially the management of debris 500. During the contact grinding process between the wafer 400 and the grinding wheel, a large amount of fine debris 500 is generated. These debris 500 will randomly splash and adhere to the surface of the turntable 220, and even penetrate into the tiny gap between the turntable 220 and the wafer 400. The random sputtering and adhesion of the debris 500 not only increases the difficulty of subsequent cleaning of the turntable 220, but more importantly, the debris 500 embedded in the gap between the wafer 400 and the turntable 220 can easily scratch the lower surface of the wafer 400 during subsequent processing, causing damage to the wafer 400, thereby affecting the yield and quality of the chip.

[0063] In addition, the adhesion of debris 500 may also have a negative impact on the equipment stability of the chamfering equipment; long-term accumulation of debris 500 may cause wear and contamination of equipment components, reducing the overall performance and life of the equipment; this not only increases the maintenance cost of the equipment, but may also cause frequent downtime, thereby greatly reducing the production efficiency of the chamfering equipment.

[0064] The wafer 400 chamfering equipment in the existing technology has obvious deficiencies in the management of debris 500. It is urgent to develop a new chamfering equipment that can effectively solve the sputtering and adhesion problems of debris 500 to improve the processing quality and production efficiency of the wafer 400 chamfering.

[0065] Furthermore, during the chamfering process of wafer 400, there is a problem that cannot be ignored: the equipment lacks the ability to obtain the status and position information of wafer 400 in real time; the relative position accuracy between wafer 400 and the grinding wheel is extremely high, and any slight deviation may lead to serious consequences; but the reality is that this high-precision requirement is often difficult to guarantee due to various factors such as mechanical equipment installation errors, visual judgment errors, and mechanical jitter; however, these problems can often only be discovered after the entire chamfering process is completed, through inspection of the processed wafer 400 or other subsequent detection methods.

[0066] When the relative position between the wafer 400 and the grinding wheel is misaligned, a series of problems will follow; for example, when the position of the grinding wheel is slightly higher or lower than the preset correct position compared to the wafer 400, the chamfering operation will continue to be performed due to the limitation of system accuracy; it can be understood that the reason for the error in the relative position between the wafer 400 and the grinding wheel is: insufficient driving accuracy of the grinding wheel, etc., resulting in an incorrect grinding wheel position (the wafer 400 is adsorbed and fixed by the turntable 220, and the position of the wafer 400 generally remains unchanged). When the upper grinding wheel (the first grinding wheel 110) and the lower grinding wheel (the second grinding wheel 120) are lower than the position of the wafer 400, the force between the grinding wheel (the first grinding wheel 110) above the wafer 400 and the wafer 400 is relatively large. Since the wafer 400 has a certain toughness, the grinding wheel (the first grinding wheel 110) above the wafer 400 The upper grinding wheel (first grinding wheel 110) presses the edge of the wafer 400 to a certain extent, at which time the upper edge of the wafer 400 is over-ground and the lower edge of the wafer 400 is under-ground; on the contrary, when the upper grinding wheel (first grinding wheel 110) and the lower grinding wheel (second grinding wheel 120) are positioned higher than the wafer 400, the force between the grinding wheel (second grinding wheel 120) below the wafer 400 and the wafer 400 is larger. Since the wafer 400 has a certain toughness, the lower grinding wheel (second grinding wheel 120) pushes the edge of the wafer 400 to a certain extent, at which time the lower edge of the wafer 400 is over-ground and the upper edge of the wafer 400 is under-ground; this uneven grinding will not only affect the appearance quality of the wafer 400, but more importantly, it will cause the performance of the wafer 400 to decline, seriously affecting the quality and yield of the product.

[0067] The present application proposes a chamfering device that can improve production efficiency and production quality; it is intended to efficiently and accurately chamfer the edge of a wafer 400 while preventing grinding debris 500 from contaminating the wafer 400 and the device; and by matching the position between the wafer 400 and the two grinding wheels, it prevents insufficient or excessive grinding.

[0068] like Figure 1 As shown, the chamfering equipment of the present application includes a chamfering mechanism 100, a carrier mechanism 200 and a barrier mechanism 300. The chamfering mechanism 100 is used to contact the wafer 400 to complete the chamfering grinding of the wafer 400; the carrier mechanism 200 is used to carry the wafer 400; the barrier mechanism 300 is arranged between the chamfering mechanism 100 and the carrier mechanism 200, and is used to isolate the chamfering mechanism 100 and the carrier mechanism 200 (specifically, the gap between the turntable 220 and the wafer 400) to prevent debris 500 from splashing.

[0069] The chamfering mechanism 100 is used to contact the wafer 400 to complete the chamfer grinding of the wafer 400. Figure 1-3As shown, the chamfering mechanism 100 serves as the core structure for grinding the wafer 400. The chamfering mechanism 100 includes a first grinding wheel 110, a second grinding wheel 120, and a drive assembly. The first grinding wheel 110 has a first rotating shaft arranged transversely and can rotate around the first rotating shaft to grind the edge of the wafer 400. The second grinding wheel 120 also has a second rotating shaft arranged transversely and can rotate around the second rotating shaft and is located below the first grinding wheel 110. A working space is formed between the first grinding wheel 110 and the second grinding wheel 120. The wafer 400 is located in the working space and is in contact with the two grinding wheels for grinding to achieve chamfering. Figure 4 As shown, the first grinding wheel 110 and the second grinding wheel 120 are not in the same vertical space, avoiding mutual interference and ensuring stable operation of the equipment. The first grinding wheel 110 is responsible for grinding the edge of the upper surface of the wafer 400. On the wafer 400, the wafer 400 and the first grinding wheel 110 contact to form a first contact area 410, and the wafer 400 located on the first contact area 410 is subjected to the grinding action. The second grinding wheel 120 is responsible for grinding the edge of the lower surface of the wafer 400. On the wafer 400, the wafer 400 and the second grinding wheel 120 contact to form a second contact area 420, and the wafer 400 located on the second contact area 420 is subjected to the grinding action.

[0070] In other embodiments, the chamfering device may be provided with only one grinding wheel, namely the first grinding wheel 110 . By moving the first grinding wheel 110 , the edge of the wafer 400 may also be ground and chamfered, which will not be described again here.

[0071] In order to achieve precise adjustment of the chamfer position of the edge of the wafer 400, the chamfering mechanism 100 further includes a driving assembly (not shown); the driving assembly is provided with two groups, which are respectively connected to and act on the first grinding wheel 110 and the second grinding wheel 120. Figure 2 、 3 As shown, the two grinding wheels can move in a first direction, a second direction, and a third direction, wherein the first direction, the second direction, and the third direction are mutually perpendicular, thereby improving chamfering accuracy and flexibility. Generally, the first direction and the second direction are the X and Y directions on the horizontal plane, respectively, and the third direction is the Z direction on the vertical plane. In this way, the positions of the first contact area 410 and the second contact area 420 on the wafer 400 can be adjusted by the drive assembly. In other words, the edge grinding position of the wafer 400 can be adjusted to complete grinding at various angles of the upper and lower edges of the wafer 400.

[0072] It is worth noting that the rotation drive of the first grinding wheel 110 and the second grinding wheel 120 can be achieved by means of a motor, and the motor is connected and installed on the drive assembly to rotate the first grinding wheel 110 (the second grinding wheel 120). Under the drive of the drive assembly, the motor moves with the first grinding wheel 110 (the second grinding wheel 120). Furthermore, the first grinding wheel 110 and the second grinding wheel 120 are centrally symmetrical with respect to the position of the wafer 400. It should be noted that the first grinding wheel 110 and the second grinding wheel 120 need to be symmetrically controlled to move so that the force of the first grinding wheel 110 on the wafer 400 and the force of the second grinding wheel 120 on the wafer 400 offset each other, which is beneficial to uniform force on the wafer 400 during grinding and improving the chamfer quality of the wafer 400.

[0073] The carrier mechanism 200 is used to carry the wafer 400. The carrier mechanism 200 is located on one side of the chamfering mechanism 100 and is used to carry and drive the wafer 400 to rotate. Figure 1 As shown, the carrier mechanism 200 includes a base 210 and a turntable 220; the turntable 220 is rotatably connected to the base 210, has a vertically arranged axial direction, and can rotate around the axial direction; the turntable 220 has an adsorption function to adsorb the wafer 400 to prevent the wafer 400 from falling off or shifting during the grinding process. It is understandable that the drive method of the turntable 220 can adopt a motor, gear assembly, etc. to complete the rotation of the turntable 220 around the axis; the top of the turntable 220 has an adsorption hole, and a pipeline is opened inside the turntable 220 and connected to an external negative pressure source. The negative pressure generated inside the turntable 220 can adsorb the wafer 400 placed on the top of the turntable 220. In one embodiment, the top of the turntable 220 is a flat surface to keep the wafer 400 to be processed horizontal.

[0074] The barrier mechanism 300 is disposed between the chamfering mechanism 100 and the carrier mechanism 200 to isolate the chamfering mechanism 100 and the carrier mechanism 200 (specifically, the gap between the turntable 220 and the wafer 400) to prevent debris 500 from splashing. Figure 1 As shown, the barrier mechanism 300 can form an air screen 311 between the turntable 220 and the first grinding wheel 110 (and the second grinding wheel 120) to isolate the grinding debris 500; the barrier mechanism 300 includes a nozzle 310, which is located between the turntable 220 and the first grinding wheel 110 and is connected to the base 210; the nozzle 310 is used to spray air toward the lower surface of the wafer 400 to form the air screen 311; Figure 5 As shown, in order to enhance the isolation effect of the gas screen 311, the spraying direction of the nozzle 310 is tilted toward one side of the first grinding wheel 110, forming an upwardly inclined gas screen 311; in this way, not only can the debris 500 be better guided to be discharged and the retention of the debris 500 on the lower surface of the wafer 400 be reduced, but the wafer 400 can also be further protected from damage.

[0075] Specifically, if Figure 6 As shown, a plurality of nozzles 310 are provided and arranged in a straight line. The projection length of the plurality of nozzles 310 on the wafer 400 is L1, and the arrangement length of the plurality of nozzles 310 is L2, and L1 is smaller than L2. By arranging the plurality of nozzles 310 in a straight line, and the arrangement length L2 being greater than the projection length L1 of the nozzles 310 on the wafer 400, the nozzles 310 can cover a wider area of ​​the lower surface of the wafer 400, thereby more effectively isolating the debris 500 generated during the grinding process of the lower surface of the wafer 400. Further, as Figure 7 、 8 As shown, the ends of the nozzles 310 are located outside the projection of the nozzles 310 onto the wafer 400. Thus, the nozzles 310 projected outside the wafer 400 are used to blow air upward. Because the arrangement length of the nozzles 310 extends beyond the outside of the wafer 400, when the nozzles 310 blow air upward past the edge of the wafer 400, due to the Bernoulli effect, the high flow velocity at the edge of the wafer 400 creates a negative pressure, while the low flow velocity at the upper surface of the wafer 400 creates a positive pressure. As a result, air above the wafer 400 forms an airflow toward the outer edge of the wafer 400, allowing debris 500 above the wafer 400 to move into the airflow formed by the nozzles 310 and be carried away. Simultaneously, as the wafer 400 rotates, the wafer 400 drives the debris 500 with it, further improving the removal efficiency of the debris 500.

[0076] Among them, Figure 6 、 7 As shown in Figure 8, the projection of the nozzle 310 on the edge of the wafer 400 is defined as having a first position 340 and a second position 350, that is, the position where the projection of the straight line where the nozzles 310 are arranged on the wafer 400 and the edge of the wafer 400 intersect is the first position 340 and the second position 350, and the rotation direction of the wafer 400 is from the first position 340 to the second position 350; a collecting mechanism 600 is provided above the second position 350 for collecting debris 500 located on the upper surface of the wafer 400; the collecting mechanism 600 includes an electrostatic component, which is provided in the airflow channel and has static electricity to adsorb debris 500 in the airflow; the flying debris 500 is captured by the electrostatic effect, thereby improving the accuracy of capturing the debris 500.

[0077] It can be understood that near the second position 350, the nozzle 310 is arranged beyond the edge of the wafer 400, so that the debris 500 on the upper surface of the wafer 400 can be carried out by the airflow formed by the Bernoulli effect; near the first position 340, the nozzle 310 is arranged beyond the edge of the wafer 400, thereby improving the isolation effect of the debris 500 on the upper surface of the wafer 400 and preventing splashing.

[0078] In one embodiment, the distance between the nozzle 310 and the lower surface of the wafer 400 is controlled between 0.5 cm and 1.0 cm. This distance range is conducive to the nozzle 310 acting accurately and directionally on the lower surface of the wafer 400, preventing airflow turbulence, improving the lower surface isolation effect and debris 500 removal effect; and the height position change of the wafer 400 is relatively accurate and rapid, which is conducive to more precise adjustment of the grinding mechanism.

[0079] Furthermore, the present application designs the structure of the nozzle 310 so that the relative position of the wafer 400 and the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) can be adjusted through the nozzle 310, which is beneficial to the real-time position matching between the wafer 400 and the first grinding wheel 110 and the second grinding wheel 120, and prevents the upper and lower edges of the wafer 400 from being under-grinded or over-grinded. Specifically, the position adjustment between the wafer 400 and the grinding mechanism is achieved by monitoring the floating and force of the nozzle 310. Specifically, as Figure 9 、 10 As shown, the barrier mechanism 300 also includes an elastic member 320. The nozzle 310 is movably connected to the base 210 and is connected to the base 210 via the elastic member 320. The elastic member 320 can drive the nozzle 310 to float or sink through elastic potential energy. A force-bearing area 250 is formed between the elastic member 320 and the base 210. A pressure sensor 330 is provided on the force-bearing area 250 to detect the force applied to the elastic member 320.

[0080] In one embodiment, Figure 9 As shown, a bracket 230 is provided on the base 210, and the elastic member 320 is an elastic rod 321. The first end of the elastic rod 321 is connected to the nozzle 310, and the second end of the elastic rod 321 is connected to a nail provided on the base 210. A force-bearing area 250 is formed between the second end of the elastic rod 321 and the bracket 230. A pressure sensor 330 is provided on the force-bearing area 250 to detect changes in the force on the elastic rod 321. It should be noted that only one elastic rod 321 and bracket 230 are provided, and multiple nozzles 310 can be connected to the elastic member 321 via a connecting structure; multiple elastic rods 321 and brackets 230 can also be provided, with one corresponding to each nozzle 310.

[0081] In another embodiment, Figure 10As shown, a sleeve 240 is provided on the base 210, and the elastic member 320 is a spring 322. The spring 322 is located within the sleeve 240. The first end of the spring 322 is connected to the nozzle 310, and the second end of the spring 322 is connected to the base 210. A force-bearing area 250 is formed between the second end of the spring 322 and the base 210. A pressure sensor 330 is provided on the force-bearing area 250 to detect changes in the force applied to the spring 322. It should be noted that only one spring 322 and sleeve 240 are provided, and multiple nozzles 310 are connected to the spring 322 via a connecting structure. Alternatively, multiple springs 322 and sleeves can be provided, each corresponding to a nozzle 310.

[0082] Specifically, when the force on the pressure sensor 330 increases, due to the stable output of the gas source, it indicates that the nozzle 310 is pressed down by the descending wafer 400. The reason is that the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) is positioned downward relative to the wafer 400, resulting in a smaller distance between the wafer 400 and the nozzle 310. At this time, the first grinding wheel 110 located above the wafer 400 and the wafer 400 are over-ground, while the second grinding wheel 120 located below the wafer 400 and the wafer 400 are under-ground. Then, the following steps are executed: the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) are driven to rise, and the pressure sensor 330 parameters are obtained in real time until the parameters reach the normal range, wherein the normal range refers to the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 basically offset each other, and the normal range is approximately a numerical range that floats around the sum of the gravity of the elastic member 320 and the nozzle 310 and the reaction force of the airflow. On the contrary, when the force on the pressure sensor 330 decreases, due to the stable output of the gas source, it indicates that the nozzle 310 is lifted by the wafer 400 and floats up. The reason is that the grinding mechanism is positioned above the wafer 400, resulting in a larger distance between the wafer 400 and the nozzle 310. At this time, the first grinding wheel 110 located on the upper part of the wafer 400 and the wafer 400 is insufficiently ground, while the second grinding wheel 120 located on the lower part of the wafer 400 and the wafer 400 is excessively ground. Then, the following is executed: the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) is driven downward, and the pressure sensor 330 parameters are obtained in real time until the parameters reach the normal range, wherein the normal range refers to the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 basically offset each other, and the normal range is approximately the numerical range floating around the sum of the gravity of the elastic member 320 and the nozzle 310 and the reaction force of the airflow.

[0083] In this way, by obtaining the force condition of the pressure sensor 330, it is possible to analyze whether the wafer 400 is biased upward or downward, and adjust the positions of the first grinding wheel 110 and the second grinding wheel 120 accordingly to match the position of the wafer 400 with the two grinding wheels to prevent insufficient or excessive grinding.

[0084] The present application also provides a chamfering method, which is applied to the above-mentioned chamfering equipment; the method includes causing the nozzle 310 to spray air toward the lower surface of the wafer 400, forming an air screen 311 between the turntable 220 and the first grinding wheel 110 and / or the second grinding wheel 120, so as to prevent grinding debris 500 from flying into the space between the lower surface of the wafer 400 and the turntable 220. During the chamfering process, the nozzle 310 continuously sprays air toward the lower surface of the wafer 400, forming a stable air screen 311; at the same time, the wafer 400 rotates under the drive of the turntable 220, and contacts the first grinding wheel 110 and the second grinding wheel 120 for chamfering; due to the presence of the air screen 311, the grinding debris 500 is effectively isolated from the lower surface of the wafer 400 and the turntable 220, preventing the debris 500 from contaminating the wafer 400 and the equipment.

[0085] Furthermore, the nozzle 310 is movably connected to the base 210, and the barrier mechanism also includes: an elastic member 320, the elastic member 320 is connected between the nozzle 310 and the base 210, and the elastic member 320 can drive the nozzle 310 to float up or sink through elastic potential energy. A force area 250 is formed between the elastic member 320 and the base 210, and a pressure sensor 330 is provided on the force area 250. The pressure sensor 330 is used to obtain the force condition of the elastic member 320; based on the force condition of the elastic member 320, the first grinding wheel 110 and the second grinding wheel 120 are driven to float up or sink so that the force on the edge of the wafer 400 is balanced.

[0086] Specifically, when the force on the pressure sensor 330 increases, due to the stable output of the gas source, it indicates that the nozzle 310 is pressed down by the descending wafer 400. The reason is that the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) is positioned downward relative to the wafer 400, resulting in a smaller distance between the wafer 400 and the nozzle 310. At this time, the first grinding wheel 110 located above the wafer 400 and the wafer 400 are over-ground, while the second grinding wheel 120 located below the wafer 400 and the wafer 400 are under-ground. Then, the following steps are executed: the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) are driven to rise, and the pressure sensor 330 parameters are obtained in real time until the parameters reach the normal range, wherein the normal range refers to the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 basically offset each other, and the normal range is approximately a numerical range that floats around the sum of the gravity of the elastic member 320 and the nozzle 310 and the reaction force of the airflow.

[0087] On the contrary, when the force on the pressure sensor 330 decreases, due to the stable output of the gas source, it indicates that the nozzle 310 is lifted by the wafer 400 and floats up. The reason is that the grinding mechanism is positioned above the wafer 400, resulting in a larger distance between the wafer 400 and the nozzle 310. At this time, the first grinding wheel 110 located on the upper part of the wafer 400 and the wafer 400 is insufficiently ground, while the second grinding wheel 120 located on the lower part of the wafer 400 and the wafer 400 is excessively ground. Then, the following is executed: the grinding mechanism (the first grinding wheel 110 and the second grinding wheel 120) is driven downward, and the pressure sensor 330 parameters are obtained in real time until the parameters reach the normal range, wherein the normal range refers to the downward force of the first grinding wheel 110 on the wafer 400 and the upward force of the second grinding wheel 120 on the wafer 400 basically offset each other, and the normal range is approximately the numerical range floating around the sum of the gravity of the elastic member 320 and the nozzle 310 and the reaction force of the airflow.

[0088] In this way, by obtaining the force condition of the pressure sensor 330, it is possible to analyze whether the wafer 400 is biased upward or downward, and adjust the positions of the first grinding wheel 110 and the second grinding wheel 120 accordingly to match the position of the wafer 400 with the two grinding wheels to prevent insufficient or excessive grinding.

[0089] Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0090] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A chamfering device, characterized in that: include: A chamfering mechanism (100), the chamfering mechanism (100) comprising: a first grinding wheel (110), the first grinding wheel (110) having a transversely arranged first rotating shaft, the first grinding wheel (110) being capable of rotating around the first rotating shaft; the first grinding wheel (110) being used for grinding an edge of a wafer (400); A carrier mechanism (200), the carrier mechanism (200) being located on one side of the chamfering mechanism (100), the carrier mechanism (200) comprising: base (210); A turntable (220), the turntable (220) being rotatably connected to the base (210), the turntable (220) having a vertically arranged axial direction and being rotatable about the vertically arranged axial direction, the turntable (220) having an adsorption function, the turntable (220) being used to carry the wafer (400) and drive the wafer (400) to rotate, so that the axial side of the wafer (400) contacts the first grinding wheel (110) to achieve chamfering; The wafer (400) contacts the first grinding wheel (110) to form a first contact area (410), and the chamfering mechanism (100) is movable relative to the carrier mechanism (200) to adjust the formation position of the first contact area (410) at the edge of the wafer (400); and The barrier mechanism (300) comprises: a nozzle (310), the nozzle (310) being located between the turntable (220) and the first grinding wheel (110), the nozzle (310) being connected to the base (210), and the nozzle (310) being used to face the lower surface of the wafer (400) to form an air screen (311) isolating the turntable (220) and the first grinding wheel (110); The nozzle (310) is movably connected to the base (210), and the barrier mechanism (300) further includes: An elastic member (320) is connected between the nozzle (310) and the base (210). The elastic member (320) can drive the nozzle (310) to float up or sink down through elastic potential energy. A force-bearing area (250) is formed between the elastic member (320) and the base (210). A pressure sensor (330) is provided on the force-bearing area (250). The pressure sensor (330) is used to obtain the force condition of the elastic member (320).

2. A chamfering device according to claim 1, characterized in that: The spraying direction of the nozzle (310) is inclined toward one side of the first grinding wheel (110), so that the air screen (311) is inclined upward.

3. A chamfering device according to claim 1 or 2, characterized in that: The chamfering mechanism (100) further comprises: a second grinding wheel (120), wherein the second grinding wheel (120) has a second rotating shaft arranged transversely, and the second grinding wheel (120) can rotate around the second rotating shaft; the second grinding wheel (120) is located below the first grinding wheel (110), and a working space is formed between the second grinding wheel (120) and the first grinding wheel (110); the wafer (400) is located in the working space and is in contact with the first grinding wheel (110) and the second grinding wheel (120) for grinding to chamfer; the wafer (400) is in contact with the second grinding wheel (120) to form a second contact area (420), and the chamfering mechanism (100) can move relative to the carrier mechanism (200) to adjust the formation position of the second contact area (420) on the edge of the wafer (400); Wherein, the first grinding wheel (110) and the second grinding wheel (120) are not in the same vertical space.

4. A chamfering device according to claim 3, characterized in that: A plurality of the nozzles (310) are provided, and the plurality of nozzles (310) are arranged in a straight line. The projection length of the plurality of nozzles (310) on the wafer (400) is L1, and the arrangement length of the plurality of nozzles (310) is L2, where L1<L2.

5. The chamfering device according to claim 4, characterized in that: Both ends of the arrangement of the nozzles (310) are respectively located outside the projection of the nozzles (310) on the wafer (400).

6. The chamfering device according to claim 5, characterized in that: The projection of the nozzle (310) on the edge of the wafer (400) is defined as having a first position (340) and a second position (350), and the rotation direction of the wafer (400) is from the first position (340) to the second position (350); A collection mechanism (600) is provided above the second position (350), and the collection mechanism (600) is used to collect debris (500) located on the upper surface of the wafer (400).

7. The chamfering device according to claim 6, characterized in that: The nozzle (310) is projected outside the wafer (400) and forms an air flow channel upward, and the nozzle (310) supplies air into the air flow channel to move the debris (500); The collecting mechanism (600) comprises: An electrostatic component is provided in the airflow channel and has static electricity to absorb debris (500) in the airflow.

8. The chamfering device according to claim 2, characterized in that: The distance between the nozzle (310) and the lower surface of the wafer (400) is between 0.5 cm and 1.0 cm.

9. The chamfering device according to claim 1, characterized in that: The base (210) is provided with a bracket (230) for supporting the nozzle (310); the elastic member (320) is an elastic rod (321); a first end of the elastic rod (321) is connected to the nozzle (310); a second end of the elastic rod (321) is connected to the bracket (230); the force-bearing area (250) is formed between the second end of the elastic rod (321) and the bracket (230); and the pressure sensor (330) is arranged between the elastic rod (321) and the bracket (230); or, The base (210) is provided with a sleeve (240) for guiding the nozzle (310); the elastic member (320) is a spring (322), the spring (322) is arranged in the sleeve (240), the first end of the spring (322) is connected to the nozzle (310), the second end of the spring (322) is connected to the base (210), the force-bearing area (250) is formed between the second end of the spring (322) and the base (210), and the pressure sensor (330) is arranged between the spring (322) and the base (210).

10. A chamfering method, characterized in that: The chamfering device according to any one of claims 1 to 9 comprises: causing the nozzle (310) to spray air toward the lower surface of the wafer (400), forming an air screen (311) between the turntable (220) and the first grinding wheel (110) and / or the second grinding wheel (120) to prevent grinding debris (500) from flying into between the lower surface of the wafer (400) and the turntable (220).

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