An ultrahigh vacuum evaporation machine

Abstract

The application provides an ultrahigh vacuum evaporation machine, which comprises a first magnetic push rod conveying device, a second magnetic push rod conveying device and a preparation chamber, a cleaning chamber, an evaporation chamber and an oxidation chamber which are sequentially connected and arranged, a first magnetic push rod conveying device is arranged at an input end of the preparation chamber, a second magnetic push rod conveying device is arranged at an output end of the oxidation chamber, the magnetic push rod and the material grabbing device are cooperated to realize full-automatic transmission of wafers, and the wafer orientation and positioning are completed in combination with a turnover mechanism, so that the production efficiency and process consistency are greatly improved; gate valve devices are arranged between the preparation chamber, the cleaning chamber, the evaporation chamber and the oxidation chamber, independent and accurate regulation and control of vacuum degrees of the chambers are realized, cross contamination of process gases is effectively avoided, and the purity of a film layer is ensured.

Description

Technical Field

[0001] This invention relates to the field of vacuum evaporation deposition technology, and more specifically, to an ultra-high vacuum evaporation deposition machine. Background Technology

[0002] Vacuum deposition machines are commonly used equipment in semiconductor material fabrication. Currently, the main method is electron beam evaporation, which works by directly heating and evaporating the material under vacuum conditions using an electron beam. The material vaporizes and moves towards the substrate, where it condenses to form a thin film. Electron beam evaporation deposition can produce high-purity thin films. Multiple crucibles can be placed in the same evaporation deposition apparatus to achieve simultaneous or separate evaporation and deposition of various materials. Any material can be evaporated using electron beam evaporation. Electron beam evaporation can evaporate high-melting-point materials, has high evaporation thermal efficiency, high beam current density, and fast evaporation speed. The resulting films are of high purity and quality, and their thickness can be accurately controlled. It can be widely used in the preparation of high-purity thin films and various optical material thin films such as conductive glass.

[0003] The closest existing technology, CN112725737A, discloses a novel vapor deposition machine, which includes a vapor deposition machine body, a heating lamp structure, a deposition pot, a control mechanism, a water-cooled insulation mechanism, a crucible, an ion source, and a drive mechanism. The deposition pot is installed inside the vapor deposition machine body, a vacuum pump group performs vacuuming, the control mechanism starts the drive mechanism, the heating lamp structure removes moisture from inside the vapor deposition machine body, the ion source bombards the substrate surface with ions to roughen the surface, cleans and assists in coating, the crucible is started to coat the substrate, and the water-cooled insulation mechanism reduces the heat radiation from the heat source inside the vacuum main cavity to the cryogenic pump.

[0004] While the existing vapor deposition machine can complete the basic coating process, it has the following drawbacks:

[0005] (1) Process chain break - Pretreatment, coating and posttreatment (such as oxidation) need to be transferred between multiple equipment, repeated vacuum breaking leads to a surge in energy consumption, increased risk of film contamination, and cannot meet the high vacuum process environment;

[0006] (2) Limited efficiency - a single chamber cannot operate in parallel, and materials wait sequentially between heating, cleaning and vapor deposition processes, making it difficult to increase production capacity;

[0007] Therefore, there is an urgent need to develop an ultra-high vacuum evaporation machine that meets the requirements of high vacuum and has high processing efficiency. Summary of the Invention

[0008] In view of this, in order to solve the above problems, the present invention proposes an ultra-high vacuum evaporation machine that meets the requirements of high vacuum and has high processing efficiency.

[0009] An ultra-high vacuum evaporation deposition machine is characterized by comprising a first magnetic pusher conveying device 1, a second magnetic pusher conveying device 2, and a preparation chamber 3, a cleaning chamber 4, an evaporation chamber 5, and an oxidation chamber 6 connected in sequence. The first magnetic pusher conveying device 1 is located at the input end of the preparation chamber 3, and the second magnetic pusher conveying device 2 is located at the output end of the oxidation chamber 6. The first magnetic pusher conveying device 1 sequentially conveys the wafer to the preparation chamber 3 and the cleaning chamber 4 for processing. The preparation chamber 3 is used for processing the wafer. The heating pretreatment and cleaning chamber 4 are used to bombard the wafer with ions to remove impurities and increase the surface roughness of the surface to be coated. The second magnetic push rod conveying device 2 receives the wafer in the cleaning chamber 4 and sequentially conveys it to the evaporation chamber 5 and the oxidation chamber 6 for processing. The evaporation chamber 5 is used for evaporation processing of the wafer, and the oxidation chamber 6 is used for oxidation processing of the wafer. Gate valve devices 7 are provided between the preparation chamber 3, cleaning chamber 4, evaporation chamber 5 and oxidation chamber 6, which can independently control the vacuum degree of each chamber. Firstly, the use of a first magnetic pusher conveyor device 1 and a second magnetic pusher conveyor device 2 for inter-chamber transfer avoids the lubrication, sealing, and venting problems associated with traditional mechanical transmission in ultra-high vacuum environments, ensuring the reliability of transfer and the cleanliness of the vacuum environment. Secondly, different process steps (such as high-temperature pretreatment, ion bombardment, evaporation, and oxidation) can be carried out under their respective optimal vacuum conditions without interference, improving the stability and effectiveness of each process. This effectively prevents cross-contamination of gases between different chambers (such as bombardment products from cleaning chamber 4 or evaporation source materials from evaporation chamber 5 entering preparation or oxidation chamber 6), ensuring the purity and quality of the final film layer (especially the oxide layer). It also facilitates the maintenance, cleaning, or troubleshooting of individual chambers without disrupting the vacuum of the entire system, reducing maintenance costs and time.

[0010] In some embodiments, the first magnetic push rod conveying device 1 includes a first magnetic drive device 11, a first flange 12, a first conveying rod 13, a first bearing arm 14, and a first bearing platform 15. The first magnetic drive device 11 is provided at the input end of the preparation chamber 3. The first magnetic drive device 11 is fixedly connected to the input end of the preparation chamber 3 through the first flange 12. The first conveying rod 13 is provided at the driving end of the first magnetic drive device 11. The first bearing arm 14 is adjustablely provided at the end of the first conveying rod 13 away from the first magnetic drive device 11. The middle part of the first bearing arm 14 is fan-shaped 141. The two ends of the fan-shaped 141 and the tail end of the first bearing arm 14 are provided with positioning guide parts 142. Adjacent positioning guide parts 142 form receiving positioning parts 143. The receiving positioning parts 143 are provided with the first bearing platform 15, which is used to receive and convey wafers. Firstly, the first support arm 14 has a fan-shaped section 141 in the middle, with positioning guides 142 and receiving positioning sections 143 at both ends of the fan-shaped section 141 and the tail end of the first support arm 14. A first support platform 15 is located within these sections, providing multi-point, precise mechanical positioning and guidance for the first support platform 15. This ensures accurate and unbiased positioning of the wafer carrier during transport and handover, improving process repeatability and precision. Secondly, the receiving positioning section 143 formed by the positioning guides 142 effectively constrains the first support platform 15, preventing it from shaking, rotating, or slipping during transport (especially when the push rod starts / stops), ensuring the safety of wafer transport. Thirdly, the adjustable first support arm 14 is located at the end of the first conveyor rod 13 away from the first magnetic drive device 11, allowing the position of the support arm to be finely adjusted according to actual needs (such as different sized wafer carriers), enhancing the adaptability and flexibility of the equipment.

[0011] Furthermore, the inner side of the first support platform 15 is provided with a continuously descending first step 151 and a second step 152; the first step 151 is an inclined guide surface, serving a guiding and positioning function, while the second step 152 is a horizontal support surface, serving a receiving function. The first step 151 serves a guiding and positioning function to facilitate the rapid and accurate placement of the wafer; the second step 152 serves a receiving function to bear the main weight of the wafer. The cooperation of the two steps significantly enhances the positioning accuracy and stability of the wafer on the support platform, effectively preventing horizontal movement or rotation of the wafer during transport or processing.

[0012] Furthermore, the second step 152 is provided with multiple reinforcing pillars 153 spaced apart on its upper side. Both sides of the reinforcing pillars 153 are rounded. The inner side of the first step 151 is provided with multiple limiting parts 154, and each limiting part 154 is located on the centerline of an adjacent reinforcing pillar 153. Firstly, the multiple reinforcing pillars 153 spaced apart on the upper side of the second step 152 ensures the structural strength of the support platform while minimizing material usage and reducing the mass of the support platform. This is beneficial for improving the movement speed and responsiveness of the magnetic push rod and reducing heat capacity, which is advantageous for heat pretreatment. Secondly, the design of multiple limiting parts 154 on the inner side of the first step 151, with each limiting part 154 located on the centerline of an adjacent reinforcing pillar 153, ensures that the limiting points are located at the centerline position where structural strength is high. This effectively constrains the wafer edge and avoids the risk of the wafer edge getting stuck directly on the side of the reinforcing pillar 153, leading to difficulties in handling or scratches. The fact that both sides of the reinforcing post 153 are rounded further reduces the possibility of stress concentration or scratches when the wafer comes into contact with the reinforcing post 153, making it easier to handle wafer handling operations.

[0013] In some embodiments, the preparation chamber 3 includes: a heating chamber 31, the input end of which is provided with the first magnetic push rod conveying device 1; a heating device 32, which is vertically mounted on the top of the heating chamber 31; a first material gripping device 33, which is mounted below the heating device 32; and a lifting drive assembly, which is connected to the heating device 32 for driving the heating device 32 to move vertically to adjust its spacing with the wafer.

[0014] Furthermore, the first material gripping device 33 is configured to receive the first support platform 15 carrying the wafer by a downward movement when the first magnetic push rod conveying device 1 conveys the first support platform 15 carrying the wafer to the heating cavity 31, and rise to the ground below the heating device 32 for heating treatment; after heating is completed, it descends to return the first support platform 15 to the first magnetic push rod conveying device 1.

[0015] In some embodiments, the cleaning chamber 4 includes a cleaning processing chamber 41, an ion bombardment device 42, a first flipping drive device 43, and a second gripping device 44. The output end of the heating chamber 31 is connected to the input end of the processing chamber. The ion bombardment device 42 is provided above the processing chamber for ion bombardment of the wafer. The first flipping drive device 43 is provided on the side of the processing chamber. The second gripping device 44 is provided at the driving end of the first flipping drive device 43. The first flipping drive device 43 is used to drive the second gripping device 44 to perform horizontal flipping. When the first magnetic push rod conveying device 1 inputs the wafer into the processing chamber, the second gripping device 44 moves downward. The process continues until the second gripping device 44 is lower than the horizontal height of the first magnetic push rod conveying device 1. At this point, the first magnetic push rod conveying device 1 conveys the wafer to the lifting gripping end of the second gripping device 44. The first flipping drive device 43 drives the second gripping device 44 to flip so that the wafer surface corresponds to the bottom of the ion bombardment device 42. The ion bombardment device 42 bombards and cleans the wafer. After completion, the second gripping device 44 resets and the lifting gripping end rotates to the surface of the second magnetic push rod conveying device 2 and is lower than the horizontal height of the second magnetic push rod conveying device 2. The second magnetic push rod conveying device 2 moves to receive and convey the wafer to the evaporation chamber 5. Firstly, the second gripping device 44 moves downwards until it is below the horizontal height of the first magnetic push rod, allowing the first magnetic push rod to directly and horizontally push the wafer carrier onto the gripping end of the second gripping device 44. This achieves a smooth, frictionless transfer, reducing particle generation and contamination risks. Secondly, the first flipping drive device 43 drives the second gripping device 44 to flip, aligning the wafer surface with the underside of the ion bombardment device 42. This ensures that the surface of the wafer to be cleaned is precisely perpendicular to the ion beam, maximizing the cleaning effect and uniformity of ion bombardment, which is difficult to achieve with traditional horizontal placement bombardment. Thirdly... The flipping drive enables automated adjustment of the wafer angle, and it can automatically reset (flip back to the horizontal state) after cleaning; Fourthly, the lifting gripping end rotates to the second magnetic push rod conveying device 2 and is lower than its horizontal height, and the second magnetic push rod moves to the second gripping device 44 to receive the wafer, realizing a smooth and horizontal handover with the second magnetic push rod, ensuring continuous and reliable transfer of the wafer from cleaning to the evaporation chamber 5; Fifthly, this design completes the receiving, positioning (flipping), processing and downstream transfer of the wafer within the cleaning chamber 4, avoiding the need for an additional inter-chamber transfer at the cleaning station.

[0016] In some embodiments, the vapor deposition chamber 5 includes a vapor deposition chamber 51, an evaporation assembly 52, an evaporation detection assembly 53, a second flipping drive device 54, and a third material gripping device 55. The output end of the cleaning and processing chamber 41 is connected to the input end of the vapor deposition chamber 51. The bottom of the vapor deposition chamber 51 is provided with the evaporation assembly 52, and the inner wall of the vapor deposition chamber 51 is provided with the evaporation detection assembly 53. The evaporation detection assembly 53 is used to monitor the evaporation data of the evaporation assembly 52. ​​The second flipping drive device 54 is provided on one side of the vapor deposition chamber 51, and the drive end of the second flipping drive device 54 is provided with the third material gripping device 55. When the second magnetic push rod conveying device 2 receives the wafer in the cleaning chamber 4, it conveys the wafer to the vapor deposition chamber 51. The third material gripping device 55 grips the material, and after gripping, the vapor deposition chamber 51 below performs vacuum coating on the material. At the same time, the evaporation detection assembly 53 monitors the evaporation data in real time to improve the film thickness accuracy.

[0017] In some embodiments, both the preparation chamber 3 and the oxidation chamber 6 are spherical cavities to optimize the thermal field, airflow uniformity, and improve vacuum strength. Specifically: First, for the same volume, a sphere has the smallest surface area, which helps reduce vacuum pumping volume and minimizes the impact of chamber venting, facilitating faster achievement and maintenance of ultra-high vacuum. Second, the spherical structure exhibits the most uniform stress distribution and highest load-bearing efficiency when subjected to uniform external pressure (such as atmospheric pressure), achieving maximum strength and rigidity with minimal weight, thus improving the reliability and safety of the equipment. Third, the spherical cavity has no dead corners, allowing for smoother airflow (especially important for gas introduction into the oxidation chamber 6), promoting uniform distribution of reactant gases and uniform heat transfer (for the heating chamber), improving the uniformity and effectiveness of the heating or oxidation process. Fourth, the smooth spherical inner wall reduces particle adhesion points, facilitating cleaning and maintenance.

[0018] In some implementations, the system also includes a main vacuum pump unit connected to each chamber via a main pipeline; branch vacuum pipelines that independently connect each chamber to the main pipeline, with each branch pipeline equipped with a regulating valve and a vacuum gauge; and differential pipelines that span the gate valve devices between adjacent chambers and are equipped with differential pressure control valves to achieve independent and precise control of the vacuum level of multiple chambers and prevent cross-contamination of process gases.

[0019] The beneficial effects of this invention: This invention proposes an ultra-high vacuum evaporation deposition machine, including a first magnetic pusher conveying device 1, a second magnetic pusher conveying device 2, and a preparation chamber 3, a cleaning chamber 4, an evaporation chamber 5, and an oxidation chamber 6 connected in sequence. The first magnetic pusher conveying device 1 is located at the input end of the preparation chamber 3, and the second magnetic pusher conveying device 2 is located at the output end of the oxidation chamber 6. The magnetic pushers and the material gripping device work together to achieve fully automatic wafer transfer, and the wafer orientation and positioning are completed by the flipping mechanism, which greatly improves production efficiency and process consistency. The vacuum level of each chamber is independently and precisely controlled by gate valve devices 7, which are installed between the preparation chamber 3, cleaning chamber 4, evaporation chamber 5, and oxidation chamber 6. This effectively avoids cross-contamination of process gases and ensures the purity of the film layer. The preparation chamber 3 is used for heating and pre-treatment of the wafer, the cleaning chamber 4 is used for ion bombardment of the wafer to remove impurities and increase the surface roughness of the surface to be coated, thereby improving the adhesion of the coating, the evaporation chamber 5 is used for evaporation processing of the wafer, and the oxidation chamber 6 is used for oxidation processing of the wafer, thereby improving the quality control of the film layer. Attached Figure Description

[0020] Figure 1 This is an overall structural diagram of the ultra-high vacuum evaporation deposition machine of the present invention.

[0021] Figure 2 This is a schematic diagram of the structure of the first magnetic push rod conveying device of the ultra-high vacuum evaporation machine of the present invention.

[0022] Figure 3 This is a partially enlarged structural diagram of the first support platform of the ultra-high vacuum evaporation machine of the present invention.

[0023] Figure 4 This is a schematic diagram of the preparation chamber of the ultra-high vacuum evaporation machine of the present invention.

[0024] Figure 5 This is a cross-sectional view of the preparation chamber of the ultra-high vacuum evaporation machine of the present invention.

[0025] Figure 6 This is a schematic diagram of the cleaning chamber of the ultra-high vacuum evaporation deposition machine of the present invention.

[0026] Figure 7 This is a cross-sectional view of the cleaning chamber of the ultra-high vacuum evaporation machine of the present invention.

[0027] Figure 8 This is a schematic diagram of the vapor deposition chamber of the ultra-high vacuum vapor deposition machine of the present invention.

[0028] Explanation of main component symbols

[0029] First magnetic push rod conveying device 1, first magnetic drive device 11, first flange 12, first conveying rod 13, V-shaped positioning protrusion 131, first bearing arm 14, fan-shaped 141, positioning guide part 142, receiving positioning part 143, first bearing platform 15, first step 151, second step 152, reinforcing column 153, limiting part 154, second magnetic push rod conveying device 2, preparation chamber 3, heating chamber 31, heating device 32, first material gripping device 33, cleaning chamber 4, cleaning and processing chamber 41, ion bombardment device 42, first flipping drive device 43, second material gripping device 44, vapor deposition chamber 5, vapor deposition chamber 51, evaporation assembly 52, evaporation detection assembly 53, second flipping drive device 54, third material gripping device 55, oxidation chamber 6, gate valve device 7.

[0030] The following detailed description, in conjunction with the accompanying drawings, will further illustrate the present invention. Detailed Implementation Example 1:

[0031] like Figure 1 This is an overall structural diagram of the ultra-high vacuum evaporation deposition machine of the present invention; as shown. Figure 2 This is a schematic diagram of the structure of the first magnetic pusher conveying device of the ultra-high vacuum evaporation deposition machine of the present invention; as shown. Figure 3 This is a partially enlarged structural diagram of the first support stage of the ultra-high vacuum evaporation deposition machine of the present invention; as shown. Figure 4 This is a schematic diagram of the preparation chamber of the ultra-high vacuum evaporation deposition machine of the present invention; as shown. Figure 5 This is a cross-sectional view of the preparation chamber of the ultra-high vacuum evaporation deposition machine of the present invention; as shown. Figure 6 This is a schematic diagram of the cleaning chamber of the ultra-high vacuum evaporation deposition machine of the present invention; as shown. Figure 7 This is a cross-sectional view of the cleaning chamber of the ultra-high vacuum evaporation deposition machine of the present invention; as shown. Figure 8 This is a schematic diagram of the vapor deposition chamber of the ultra-high vacuum vapor deposition machine of the present invention.

[0032] An ultra-high vacuum evaporation deposition machine is characterized by comprising a first magnetic pusher conveying device 1, a second magnetic pusher conveying device 2, and a preparation chamber 3, a cleaning chamber 4, an evaporation chamber 5, and an oxidation chamber 6 connected in sequence. The first magnetic pusher conveying device 1 is located at the input end of the preparation chamber 3, and the second magnetic pusher conveying device 2 is located at the output end of the oxidation chamber 6. The first magnetic pusher conveying device 1 sequentially conveys the wafer to the preparation chamber 3 and the cleaning chamber 4 for processing. The preparation chamber 3 is used for processing the wafer. The heating pretreatment and cleaning chamber 4 are used to bombard the wafer with ions to remove impurities and increase the surface roughness of the surface to be coated. The second magnetic push rod conveying device 2 receives the wafer in the cleaning chamber 4 and sequentially conveys it to the evaporation chamber 5 and the oxidation chamber 6 for processing. The evaporation chamber 5 is used for evaporation processing of the wafer, and the oxidation chamber 6 is used for oxidation processing of the wafer. Gate valve devices 7 are provided between the preparation chamber 3, cleaning chamber 4, evaporation chamber 5 and oxidation chamber 6, which can independently control the vacuum degree of each chamber. Firstly, the use of a first magnetic pusher conveyor device 1 and a second magnetic pusher conveyor device 2 for inter-chamber transfer avoids the lubrication, sealing, and venting problems associated with traditional mechanical transmission in ultra-high vacuum environments, ensuring the reliability of transfer and the cleanliness of the vacuum environment. Secondly, different process steps (such as high-temperature pretreatment, ion bombardment, evaporation, and oxidation) can be carried out under their respective optimal vacuum conditions without interference, improving the stability and effectiveness of each process. This effectively prevents cross-contamination of gases between different chambers (such as bombardment products from cleaning chamber 4 or evaporation source materials from evaporation chamber 5 entering preparation or oxidation chamber 6), ensuring the purity and quality of the final film layer (especially the oxide layer). It also facilitates the maintenance, cleaning, or troubleshooting of individual chambers without disrupting the vacuum of the entire system, reducing maintenance costs and time.

[0033] The first magnetic push rod conveying device 1 includes a first magnetic drive device 11, a first flange 12, a first conveying rod 13, a first bearing arm 14, and a first bearing platform 15. The first magnetic drive device 11 is provided at the input end of the preparation chamber 3. The first magnetic drive device 11 is fixedly connected to the input end of the preparation chamber 3 through the first flange 12. The first conveying rod 13 is provided at the driving end of the first magnetic drive device 11. The first bearing arm 14 is adjustablely provided at the end of the first conveying rod 13 away from the first magnetic drive device 11. The middle part of the first bearing arm 14 is fan-shaped 141. The two ends of the fan-shaped 141 and the tail end of the first bearing arm 14 are provided with positioning guide parts 142. Adjacent positioning guide parts 142 form receiving positioning parts 143. The receiving positioning parts 143 are provided with the first bearing platform 15, which is used to receive and convey wafers. Firstly, the first support arm 14 has a fan-shaped section 141 in the middle, with positioning guides 142 and receiving positioning sections 143 at both ends of the fan-shaped section 141 and the tail end of the first support arm 14. A first support platform 15 is located within these sections, providing multi-point, precise mechanical positioning and guidance for the first support platform 15. This ensures accurate and unbiased positioning of the wafer carrier during transport and handover, improving process repeatability and precision. Secondly, the receiving positioning section 143 formed by the positioning guides 142 effectively constrains the first support platform 15, preventing it from shaking, rotating, or slipping during transport (especially when the push rod starts / stops), ensuring the safety of wafer transport. Thirdly, the adjustable first support arm 14 is located at the end of the first conveyor rod 13 away from the first magnetic drive device 11, allowing the position of the support arm to be finely adjusted according to actual needs (such as different sized wafer carriers), enhancing the adaptability and flexibility of the equipment.

[0034] The inner side of the first support platform 15 is provided with a continuously descending first step 151 and a second step 152. The first step 151 is an inclined guide surface, which serves to guide and position the wafer, while the second step 152 is a horizontal support surface, which serves to support the wafer. The first step 151 guides and positions the wafer, facilitating its rapid and accurate placement; the second step 152 supports the wafer's main weight. The cooperation of the two steps significantly enhances the positioning accuracy and stability of the wafer on the support platform, effectively preventing horizontal movement or rotation of the wafer during transport or processing.

[0035] The second step 152 has multiple reinforcing pillars 153 spaced apart on its upper side, with rounded sides on both sides. The first step 151 has multiple limiting parts 154 on its inner side, each of which is located on the centerline of an adjacent reinforcing pillar 153. Firstly, the multiple reinforcing pillars 153 spaced apart on the upper side of the second step 152 ensure the structural strength of the support platform while minimizing material usage and reducing the platform's mass. This improves the movement speed and responsiveness of the magnetic push rod and reduces heat capacity, which is beneficial for preheating. Secondly, the design of multiple limiting parts 154 on the inner side of the first step 151, with each limiting part 154 located on the centerline of an adjacent reinforcing pillar 153, places the limiting points at a high structural strength centerline position. This effectively constrains the wafer edge and avoids the risk of the wafer edge getting stuck on the side of the reinforcing pillar 153, leading to difficulties in handling or scratches. The rounded sides of the reinforcing pillars 153 further reduce the possibility of stress concentration or scratches when the wafer contacts the reinforcing pillars 153, facilitating wafer handling.

[0036] The preparation chamber 3 includes: a heating chamber 31, the input end of which is provided with the first magnetic push rod conveying device 1; a heating device 32, which is vertically mounted on the top of the heating chamber 31; a first material gripping device 33, which is mounted below the heating device 32; and a lifting drive assembly, which is connected to the heating device 32 for driving the heating device 32 to move vertically to adjust its spacing with the wafer.

[0037] The first material gripping device 33 is configured to receive the first support platform 15 carrying the wafer by descending motion when the first magnetic push rod conveying device 1 conveys the first support platform 15 carrying the wafer to the heating cavity 31, and rise to the ground below the heating device 32 for heating treatment; after heating is completed, it descends to return the first support platform 15 to the first magnetic push rod conveying device 1.

[0038] The cleaning chamber 4 includes a cleaning processing chamber 41, an ion bombardment device 42, a first flipping drive device 43, and a second gripping device 44. The output end of the heating chamber 31 is connected to the input end of the processing chamber. The ion bombardment device 42 is located above the processing chamber and is used to bombard the wafer with ions. The first flipping drive device 43 is located on the side of the processing chamber, and the second gripping device 44 is located at the drive end of the first flipping drive device 43. The first flipping drive device 43 is used to drive the second gripping device 44 to flip horizontally. When the first magnetic push rod conveying device 1 inputs the wafer into the processing chamber, the second gripping device 44 moves downward until... The second gripping device 44 is lower than the horizontal height of the first magnetic push rod conveying device 1. At this time, the first magnetic push rod conveying device 1 conveys the wafer to the lifting gripping end of the second gripping device 44. The first flipping drive device 43 drives the second gripping device 44 to flip so that the wafer surface corresponds to the bottom of the ion bombardment device 42. The ion bombardment device 42 bombards and cleans the wafer. After completion, the second gripping device 44 resets and the lifting gripping end rotates to the surface of the second magnetic push rod conveying device 2 and is lower than the horizontal height of the second magnetic push rod conveying device 2. The second magnetic push rod conveying device 2 moves to receive and convey the wafer to the evaporation chamber 5. Firstly, the second gripping device 44 moves downwards until it is below the horizontal height of the first magnetic push rod, allowing the first magnetic push rod to directly and horizontally push the wafer carrier onto the gripping end of the second gripping device 44. This achieves a smooth, frictionless transfer, reducing particle generation and contamination risks. Secondly, the first flipping drive device 43 drives the second gripping device 44 to flip, aligning the wafer surface with the underside of the ion bombardment device 42. This ensures that the surface of the wafer to be cleaned is precisely perpendicular to the ion beam, maximizing the cleaning effect and uniformity of ion bombardment, which is difficult to achieve with traditional horizontal placement bombardment. Thirdly... The flipping drive enables automated adjustment of the wafer angle, and it can automatically reset (flip back to the horizontal state) after cleaning; Fourthly, the lifting gripping end rotates to the second magnetic push rod conveying device 2 and is lower than its horizontal height, and the second magnetic push rod moves to the second gripping device 44 to receive the wafer, realizing a smooth and horizontal handover with the second magnetic push rod, ensuring continuous and reliable transfer of the wafer from cleaning to the evaporation chamber 5; Fifthly, this design completes the receiving, positioning (flipping), processing and downstream transfer of the wafer within the cleaning chamber 4, avoiding the need for an additional inter-chamber transfer at the cleaning station.

[0039] The vapor deposition chamber 5 includes a vapor deposition chamber 51, an evaporation assembly 52, an evaporation detection assembly 53, a second flipping drive device 54, and a third material gripping device 55. The output end of the cleaning and processing chamber 41 is connected to the input end of the vapor deposition chamber 51. The bottom of the vapor deposition chamber 51 is provided with the evaporation assembly 52, and the inner wall of the vapor deposition chamber 51 is provided with the evaporation detection assembly 53. The evaporation detection assembly 53 is used to monitor the evaporation data of the evaporation assembly 52. ​​The second flipping drive device 54 is provided on one side of the vapor deposition chamber 51, and the drive end of the second flipping drive device 54 is provided with the third material gripping device 55. When the second magnetic push rod conveying device 2 receives the wafer in the cleaning chamber 4, it conveys the wafer to the vapor deposition chamber 51. The third material gripping device 55 grips the material, and after gripping, the vapor deposition chamber 51 below performs vacuum coating on the material. At the same time, the evaporation detection assembly 53 monitors the evaporation data in real time to improve the film thickness accuracy.

[0040] Both the preparation chamber 3 and the oxidation chamber 6 are spherical cavities to optimize the thermal field, airflow uniformity, and improve vacuum strength. Specifically: First, for the same volume, a sphere has the smallest surface area, which helps reduce vacuum pumping volume and minimizes the impact of chamber outgassing, facilitating faster achievement and maintenance of ultra-high vacuum. Second, the spherical structure provides the most uniform stress distribution and highest load-bearing efficiency when subjected to uniform external pressure (such as atmospheric pressure), achieving maximum strength and rigidity with minimal weight, thus improving equipment reliability and safety. Third, the spherical cavity has no dead corners, allowing for smoother airflow (especially important for gas introduction into the oxidation chamber 6), promoting uniform distribution of reactant gases and heat transfer (for the heating chamber), improving the uniformity and effectiveness of the heating or oxidation process. Fourth, the smooth spherical inner wall reduces particle adhesion points, facilitating cleaning and maintenance.

[0041] It also includes a main vacuum pump unit, which connects to each chamber through a main pipeline; branch vacuum pipelines, which independently connect each chamber to the main pipeline, with each branch pipeline equipped with a regulating valve and a vacuum gauge; and differential pipelines, which span the gate valve devices between adjacent chambers and are equipped with differential pressure control valves to achieve independent and precise control of the vacuum level of multiple chambers and prevent cross-contamination of process gases.

[0042] The beneficial effects of this invention: This invention proposes an ultra-high vacuum evaporation deposition machine, including a first magnetic pusher conveying device 1, a second magnetic pusher conveying device 2, and a preparation chamber 3, a cleaning chamber 4, an evaporation chamber 5, and an oxidation chamber 6 connected in sequence. The first magnetic pusher conveying device 1 is located at the input end of the preparation chamber 3, and the second magnetic pusher conveying device 2 is located at the output end of the oxidation chamber 6. The magnetic pushers and the material gripping device work together to achieve fully automatic wafer transfer, and the wafer orientation and positioning are completed by the flipping mechanism, which greatly improves production efficiency and process consistency. The vacuum level of each chamber is independently and precisely controlled by gate valve devices 7, which are installed between the preparation chamber 3, cleaning chamber 4, evaporation chamber 5, and oxidation chamber 6. This effectively avoids cross-contamination of process gases and ensures the purity of the film layer. The preparation chamber 3 is used for heating and pre-treatment of the wafer, the cleaning chamber 4 is used for ion bombardment of the wafer to remove impurities and increase the surface roughness of the surface to be coated, thereby improving the adhesion of the coating, the evaporation chamber 5 is used for evaporation processing of the wafer, and the oxidation chamber 6 is used for oxidation processing of the wafer, thereby improving the quality control of the film layer.

[0043] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. An ultra-high vacuum evaporation deposition machine, characterized in that: The system includes a first magnetic pusher conveyor (1), a second magnetic pusher conveyor (2), and a preparation chamber (3), a cleaning chamber (4), a vapor deposition chamber (5), and an oxidation chamber (6) connected in sequence. The first magnetic pusher conveyor (1) is located at the input end of the preparation chamber (3), and the second magnetic pusher conveyor (2) is located at the output end of the oxidation chamber (6). The first magnetic pusher conveyor (1) sequentially conveys the wafer to the preparation chamber (3) and the cleaning chamber (4) for processing. The preparation chamber (3) is used for... The wafer is preheated and heated. The cleaning chamber (4) is used to bombard the wafer with ions to remove impurities and increase the surface roughness of the surface to be coated. The second magnetic pusher conveying device (2) receives the wafer in the cleaning chamber (4) and sequentially conveys it to the evaporation chamber (5) and the oxidation chamber (6) for processing. The evaporation chamber (5) is used to perform evaporation processing on the wafer, and the oxidation chamber (6) is used to perform oxidation processing on the wafer. Gates are provided between the preparation chamber (3), the cleaning chamber (4), the evaporation chamber (5), and the oxidation chamber (6). The valve device (7) can independently control the vacuum level of each chamber. The first magnetic push rod conveying device (1) includes a first magnetic drive device (11), a first flange (12), a first conveying rod (13), a first bearing arm (14), and a first bearing platform (15). The first magnetic drive device (11) is provided at the input end of the preparation chamber (3). The first magnetic drive device (11) is fixedly connected to the input end of the preparation chamber (3) through the first flange (12). The first magnetic drive device (11) is provided at the drive end of the first magnetic drive device (11). A conveying rod (13) is provided with an adjustable first support arm (14) at the end of the first conveying rod (13) away from the first magnetic drive device (11). The middle part of the first support arm (14) is fan-shaped (141). The two ends of the fan-shaped (141) and the tail end of the first support arm (14) are provided with positioning guides (142). Adjacent positioning guides (142) form a receiving positioning part (143). The receiving positioning part (143) is provided with a first support platform (15). The first support platform (15) is used to receive and transport wafers.

2. The ultra-high vacuum evaporation machine as described in claim 1, characterized in that: The inner side of the first bearing platform (15) is provided with a continuously descending first step (151) and a second step (152); the first step (151) is an inclined guide surface, which plays a guiding and positioning role, and the second step (152) is a horizontal bearing surface, which plays a supporting role.

3. The ultra-high vacuum evaporation machine as described in claim 2, characterized in that: The second step (152) is provided with multiple reinforcing columns (153) spaced apart. Both sides of the reinforcing column (153) are arcs. The inner side of the first step (151) is provided with multiple limiting parts (154), and each limiting part (154) is on the center line of the adjacent reinforcing column (153).

4. The ultra-high vacuum evaporation machine as described in claim 1, characterized in that: The preparation chamber (3) includes: a heating chamber (31) with the first magnetic push rod conveying device (1) at its input end; a heating device (32) which is vertically mounted on the top of the heating chamber (31); a first material gripping device (33) which is mounted below the heating device (32); and a lifting drive assembly which is connected to the heating device (32) for driving the heating device (32) to move vertically to adjust its spacing with the wafer.

5. The ultra-high vacuum evaporation machine as described in claim 4, characterized in that: The first material gripping device (33) is configured to receive the first support platform (15) carrying the wafer by a downward movement when the first magnetic push rod conveying device (1) conveys the first support platform (15) carrying the wafer to the heating cavity (31), and rise to the bottom of the heating device (32) for heating treatment; After heating is completed, the first support platform (15) is lowered and returned to the first magnetic push rod conveying device (1).

6. The ultra-high vacuum evaporation machine as described in claim 4, characterized in that: The cleaning chamber (4) includes a cleaning processing chamber (41), an ion bombardment device (42), a first flipping drive device (43), and a second gripping device (44). The output end of the heating chamber (31) is connected to the input end of the processing chamber. An ion bombardment device (42) is provided above the processing chamber. The ion bombardment device (42) is used to bombard the wafer with ions. A first flipping drive device (43) is provided on the side of the processing chamber. A second gripping device (44) is provided at the driving end of the first flipping drive device (43). The first flipping drive device (43) is used to drive the second gripping device (44) to flip horizontally. When the first magnetic push rod conveying device (1) inputs the wafer into the processing chamber (41), the second gripping device (44) moves downward. The process continues until the second gripping device (44) is lower than the horizontal height of the first magnetic push rod conveying device (1). At this time, the first magnetic push rod conveying device (1) conveys the wafer to the lifting gripping end of the second gripping device (44). The first flipping drive device (43) drives the second gripping device (44) to flip so that the wafer surface corresponds to the bottom of the ion bombardment device (42). The ion bombardment device (42) bombards and cleans the wafer. After completion, the second gripping device (44) resets and the lifting gripping end rotates to the surface of the second magnetic push rod conveying device (2) and is lower than the horizontal height of the second magnetic push rod conveying device (2). The second magnetic push rod conveying device (2) moves to the second magnetic push rod conveying device (2) to receive and convey the wafer to the evaporation chamber (5).

7. The ultra-high vacuum evaporation machine as described in claim 6, characterized in that: The vapor deposition chamber (5) includes a vapor deposition chamber (51), an evaporation assembly (52), an evaporation detection assembly (53), a second flipping drive device (54), and a third material gripping device (55). The output end of the cleaning and processing chamber (41) is connected to the input end of the vapor deposition chamber (51). The bottom of the vapor deposition chamber (51) is provided with an evaporation assembly (52), and the inner wall of the vapor deposition chamber (51) is provided with an evaporation detection assembly (53). The evaporation detection assembly (53) is used to monitor the evaporation data of the evaporation assembly (52). A second flipping drive device (54) is provided on one side of the cavity (51). A third material gripping device (55) is provided at the drive end of the second flipping drive device (54). When the second magnetic push rod conveying device (2) receives the wafer in the cleaning chamber (4), it conveys the wafer to the evaporation cavity (51). The third material gripping device (55) grips the material. After gripping, the evaporation cavity (51) below performs vacuum coating on the material. At the same time, the evaporation detection component (53) monitors the evaporation data in real time to improve the film thickness accuracy.

8. The ultra-high vacuum evaporation machine as described in claim 1, characterized in that: The preparation chamber (3) and oxidation chamber (6) are both spherical cavities to optimize the thermal field, airflow uniformity and improve vacuum intensity.

9. The ultra-high vacuum evaporation machine as described in claim 1, characterized in that: It also includes a main vacuum pump unit, which connects to each chamber through a main pipeline; branch vacuum pipelines, which independently connect each chamber to the main pipeline, with each branch pipeline equipped with a regulating valve and a vacuum gauge; and differential pipelines, which span the gate valve devices between adjacent chambers and are equipped with differential pressure control valves to achieve independent and precise control of the vacuum level of multiple chambers and prevent cross-contamination of process gases.

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