Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus is provided with a first substrate holding unit (2), at least one nozzle (3), a mixing unit (30), a liquid supply tube (42), and a control unit (90). The nozzle (3) ejects the processing liquid onto the main surface of the substrate W held by the first substrate holding unit (2). The mixing unit (30) supplies a holding liquid obtained by mixing a polymer and an organic solvent to the at least one nozzle (3), and discharges the holding liquid from the at least one nozzle (3) toward the main surface of the substrate (W) to form a liquid film of the holding liquid on the main surface of the substrate (W). The control unit (90) determines a first target mixing ratio of the polymer to the organic solvent in the holding liquid on the basis of a parameter, which is the size or number of particles on the main surface of the substrate (W), and controls the mixing unit (30) on the basis of the first target mixing ratio.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] Previously, substrate processing devices for removing particles from the main surface of a substrate have been proposed (e.g., Patent Documents 1 to 4). In Patent Documents 1 to 4, the substrate processing device applies a polymer liquid to the entire main surface of the substrate, thereby forming a liquid film of the polymer liquid on the main surface of the substrate. Subsequently, the substrate processing device dries the polymer liquid to form a polymer film on the main surface of the substrate. As a result, the particles on the main surface of the substrate are closely attached to the polymer film and are retained by the polymer film. Subsequently, the substrate processing device supplies a stripping liquid for stripping the polymer film to the main surface of the substrate. Thus, the polymer film is stripped while retaining the particles, thereby removing the particles from the main surface of the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2020-161525

[0006] Patent Document 2: Japanese Patent Application Laid-Open No. 2018-110220

[0007] Patent Document 3: Japanese Patent Application Laid-Open No. 2022-23730

[0008] Patent Document 4: Japanese Patent Application Laid-Open No. 2022-18883 Summary of the Invention

[0009] Problems to be solved by the invention

[0010] The thickness of the polymer film (hereinafter referred to as the retention film) is crucial for removing particles from the substrate's main surface. For example, if the retention film is thin, there is a concern that the particle removal rate may decrease depending on the particle distribution. For example, if the retention film is thin, the film's strength may be insufficient, resulting in a reduced removal rate for larger particles.

[0011] On the other hand, if the thickness of the retaining film is increased regardless of the distribution of the particles, the amount of polymer liquid used will increase unnecessarily.

[0012] Therefore, an object of the present invention is to provide a technique for more appropriately removing particles.

[0013] Technical means to solve the problem

[0014] The first method is a substrate processing device, which comprises: a first substrate holding portion for holding a substrate; at least one nozzle for spraying a processing liquid onto the main surface of the above-mentioned substrate held by the above-mentioned first substrate holding portion; a mixing portion for supplying a holding liquid obtained by mixing a polymer and an organic solvent to the above-mentioned at least one nozzle, and spraying the above-mentioned holding liquid toward the above-mentioned main surface of the above-mentioned substrate from the above-mentioned at least one nozzle, thereby forming a liquid film of the above-mentioned holding liquid on the above-mentioned main surface of the above-mentioned substrate; a liquid supply pipe connected to the above-mentioned at least one nozzle, for supplying a stripping liquid for stripping off the holding film formed by solidifying or hardening the above-mentioned liquid film of the above-mentioned holding liquid to the above-mentioned at least one nozzle, and spraying the above-mentioned stripping liquid toward the above-mentioned main surface of the above-mentioned substrate from the above-mentioned at least one nozzle; and a control portion for determining a first target mixing ratio of the above-mentioned polymer to the above-mentioned organic solvent in the above-mentioned holding liquid based on a parameter, i.e., a size or number of particles on the above-mentioned main surface of the above-mentioned substrate, and controlling the above-mentioned mixing portion based on the above-mentioned first target mixing ratio.

[0015] A second aspect is the substrate processing apparatus according to the first aspect, further comprising a sensor configured to measure the parameter of the particles on the main surface of the substrate.

[0016] The third embodiment is a substrate processing device as in the second embodiment, which comprises a chamber that accommodates the first substrate holding portion, the at least one nozzle, and the sensor, and the sensor measures the parameters of the particles on the main surface of the substrate held by the first substrate holding portion.

[0017] The fourth method is a substrate processing device like the second method, which comprises: a chamber for accommodating the above-mentioned first substrate holding part and the above-mentioned at least one nozzle; and a second substrate holding part, which is arranged outside the above-mentioned chamber and holds the above-mentioned substrate; and the above-mentioned sensor is arranged outside the above-mentioned chamber to measure the above-mentioned parameters of the above-mentioned particles on the above-mentioned main surface of the above-mentioned substrate held by the above-mentioned second substrate holding part.

[0018] The fifth method is a substrate processing device as in any one of the first to fourth methods, wherein the control unit determines the first target mixing ratio when the parameter is the first value to be larger than the first target mixing ratio when the parameter is the second value smaller than the first value.

[0019] A sixth aspect is the substrate processing apparatus according to the fifth aspect, wherein the parameter is a size of the particles, and the control unit determines the first target mixing ratio based on a maximum size of the particles on the main surface of the substrate.

[0020] The seventh method is a substrate processing device like the sixth method, which has a storage unit that stores first correspondence data representing the correspondence between the above-mentioned parameters of the above-mentioned particles and the above-mentioned first target mixing ratio, and the above-mentioned control unit determines the above-mentioned first target mixing ratio based on the above-mentioned parameters and the above-mentioned first correspondence data.

[0021] The eighth method is a substrate processing device like the seventh method, wherein the control unit updates the first correspondence data based on a learned model, and the learned model takes the parameters, the first target mixing ratio, and the processing results based on the number of particles on the main surface of the substrate after the stripping liquid is supplied as input data.

[0022] A ninth aspect is the substrate processing apparatus according to the sixth aspect, wherein the control unit determines the first target mixing ratio based on a learned model, and the learned model uses the parameters of the particles on the main surface of the substrate as input data.

[0023] The 10th method is a substrate processing device as described in any one of the 5th to 9th methods, wherein the retaining liquid contains a first polymer and a second polymer as the polymer that is more easily dissolved in the stripping liquid than the first polymer, and the control unit determines the second target mixing ratio of the second polymer to the first polymer when the parameter is the first value to be greater than the second target mixing ratio when the parameter is the second value.

[0024] An eleventh aspect is the substrate processing apparatus according to any one of the first to tenth aspects, wherein the control unit determines the first target mixing ratio in common for a plurality of substrates in the same lot that are sequentially carried in.

[0025] A twelfth aspect is the substrate processing apparatus according to any one of the first to eleventh aspects, wherein the main surface of the substrate is subjected to a planarization process.

[0026] The 13th method is a substrate processing method, comprising: a holding step of holding a substrate having a main surface that has been flattened; a mixing ratio determining step of determining a first target mixing ratio of the polymer to the organic solvent in a holding liquid that is a mixture of a polymer and an organic solvent based on a parameter, i.e., a size or number of particles on the main surface of the substrate; a liquid film forming step of supplying the holding liquid mixed with the first target mixing ratio to the main surface of the substrate to form a liquid film of the holding liquid on the main surface of the substrate; a holding film forming step of solidifying or hardening the liquid film of the holding liquid on the main surface of the substrate to form a holding film on the main surface of the substrate; and a stripping step of supplying a stripping liquid to the main surface of the substrate for stripping the holding film.

[0027] Effects of the Invention

[0028] According to the first and thirteenth aspects, the first target mixing ratio is determined based on the particles, so that a retention film having a film thickness corresponding to the particles can be formed. Therefore, the particles can be removed more appropriately.

[0029] According to the second aspect, the sensor measures the parameters of the particles. Therefore, the control unit can determine the first target mixing ratio based on the actual parameters of the particles.

[0030] According to the third aspect, the structure for cleaning the substrate (the first substrate holding unit and the nozzle) and the sensor are installed in the same chamber. Therefore, the sensor can measure the parameters of particles on the main surface of the substrate immediately before the cleaning process.

[0031] According to the fourth aspect, the sensor is provided outside the chamber that houses the components for cleaning the substrate (the first substrate holding portion and the nozzle), thereby preventing the sensor from being exposed to the processing liquid environment.

[0032] According to the fifth aspect, when the size or number of particles is large, the first target mixing ratio of the polymer is increased. Therefore, the thickness of the retaining film can be increased more easily. Consequently, the retaining film can more appropriately retain the particles, and the retaining film and the particles can be peeled off from the main surface of the substrate using a stripping solution.

[0033] Conversely, when the particle size or number is small, the first target mixing ratio of the polymer can be lowered. Consequently, the thickness of the retaining film can be more easily reduced. This allows the retaining film and particles to be peeled off from the main surface of the substrate using a stripping solution, and the amount of polymer used can be reduced.

[0034] According to the sixth aspect, the control unit determines the first target mixing ratio corresponding to the maximum size. Therefore, the film is maintained at a film thickness corresponding to the maximum size. Therefore, the substrate processing apparatus can more reliably remove particles.

[0035] According to the seventh aspect, the control unit can determine the first target mixing ratio through simple processing.

[0036] According to the eighth aspect, the first correspondence data is updated based on the learned model based on the processing result for the substrate. Therefore, the control unit can determine a more appropriate first target mixing ratio for subsequent substrates.

[0037] According to the ninth aspect, the control unit can determine a more appropriate first target mixture ratio.

[0038] According to the tenth embodiment, the retaining liquid contains the first polymer and the second polymer. Therefore, the retaining film is in a state where the first portion containing the first polymer and the second portion containing the second polymer are unevenly distributed. The second portion is easily dissolved in the stripping liquid. As a result, when the second portion dissolves, the first portion separates with the second portion as a boundary and is stripped from the main surface of the substrate.

[0039] In the tenth embodiment, when the size or number of particles is large, the first and second target polymer mixing ratios are increased. Consequently, the substrate processing apparatus can form a thick retaining film on the main surface of the substrate, with a high second portion ratio. Consequently, even when the retaining film is thick, a long second portion in the thickness direction is easily formed, and the first portion is appropriately separated with the second portion serving as a boundary while maintaining a certain size. Thus, the first portion is peeled off while retaining the particles.

[0040] Conversely, when the size or number of particles is small, the first target mixing ratio and the second target mixing ratio of the polymer are low. Therefore, a retaining film with a small thickness and a low ratio of the second portion can be formed on the main surface of the substrate. If the ratio of the second portion is too high when the thickness of the retaining film is small, there is a concern that the first portion will be finely separated by the stripping liquid and the first portion will not be able to retain the particles. In the tenth method, the ratio of the second portion is low, so the first portion is appropriately separated with the second portion as the boundary while maintaining a certain size. As a result, the first portion is stripped while retaining the particles.

[0041] According to the eleventh aspect, the processing load of the control unit can be reduced.

[0042] According to the twelfth aspect, the substrate processing apparatus can remove particles generated on the main surface of the substrate by the planarization process. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 It is a plan view schematically showing an example of the configuration of a substrate processing apparatus.

[0044] Figure 2 This is a block diagram schematically showing an example of the configuration of a control unit.

[0045] Figure 3 It is a longitudinal sectional view schematically showing an example of the configuration of the processing unit.

[0046] Figure 4 This is a flowchart showing an example of the operation of the processing unit.

[0047] Figure 5 This is a graph showing an example of a first correspondence relationship between the particle size and the first target mixing ratio.

[0048] Figure 6 This is a diagram schematically showing an example of the state of the processing unit in each step.

[0049] Figure 7 It is a cross-sectional view schematically showing an example of a partial configuration of a substrate.

[0050] Figure 8 This is a cross-sectional view schematically showing an example of the state on the main surface of the substrate during the peeling step.

[0051] Figure 9 This is a diagram showing an example of a partial configuration of a substrate of a comparative example.

[0052] Figure 10 This is a graph showing an example of the second correspondence relationship between the particle size and the second target mixing ratio.

[0053] Figure 11 This is a diagram schematically showing another first example of the mixing section.

[0054] Figure 12 This is a diagram schematically showing another second example of the mixing section.

[0055] Figure 13 This is a flowchart showing an example of a substrate processing method.

[0056] Figure 14 This is a functional block diagram schematically showing an example of the electrical configuration of a substrate processing apparatus.

[0057] Figure 15 This is a diagram schematically showing an example of learning materials.

[0058] Figure 16 This is a functional block diagram schematically showing another example of the electrical configuration of the substrate processing apparatus.

[0059] Figure 17 This is a diagram showing an example of the configuration of a processing unit.

[0060] Figure 18 This is a diagram schematically showing an example of the configuration of a substrate processing system. DETAILED DESCRIPTION

[0061] The following describes the embodiments in detail with reference to the accompanying drawings. In the accompanying drawings, the dimensions and numbers of various components may be exaggerated or simplified as necessary for easier understanding. Components with identical configurations and functions are denoted by the same reference numerals, and repeated descriptions are omitted in the following description.

[0062] In the following description, the same components are denoted by the same reference numerals and their names and functions are also assumed to be the same, so their detailed description may be omitted to avoid duplication.

[0063] In the following description, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments and are not limited to the order that can be generated by these ordinal numbers.

[0064] When using expressions that express relative or absolute positional relationships (for example, "toward a direction," "along a direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified in advance, the expression not only strictly expresses the positional relationship, but also expresses a state after relative displacement in terms of angle or distance within a tolerance or a range that can achieve the same degree of function. When using expressions that express an equal state (for example, "same," "equal," "homogeneous," etc.), unless otherwise specified in advance, the expression not only expresses a state of strict quantitative equality, but also expresses a state of difference with a tolerance or a range that can achieve the same degree of function. When using expressions that express shape (for example, "quadrilateral" or "cylindrical shape," etc.), unless otherwise specified in advance, the expression not only expresses the shape strictly geometrically, but also expresses a shape having, for example, concave-convex or chamfered corners within a range that can achieve the same degree of effect. When using the expression "includes," "provides," "has," "includes," or "has" a constituent element, the expression is not an exclusive expression that excludes the presence of other constituent elements. When the expression "at least any one of A, B, and C" is used, it means including only A, only B, only C, any two of A, B, and C, and all of A, B, and C.

[0065] <Overall Structure of Substrate Processing Equipment>

[0066] Figure 1 1 is a plan view schematically showing an example of the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one by one.

[0067] Substrate W is, for example, a semiconductor wafer, a liquid crystal display substrate, an organic EL (electroluminescence) substrate, an FPD (flat panel display) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, or a solar cell substrate. Substrate W has a relatively thin, flat plate shape. Hereinafter, substrate W is assumed to be a semiconductor wafer. Substrate W has, for example, a circular plate shape. The diameter of substrate W is, for example, approximately 300 mm, and the film thickness of substrate W is, for example, approximately 0.5 mm to approximately 3 mm.

[0068] In the process before the substrate processing device 100, the substrate W is subjected to a planarization treatment. The planarization treatment is a treatment for planarizing the main surface of the substrate W. The planarization treatment can be performed by chemical polishing (CP), can also be performed by mechanical polishing (MP), and can also be performed by chemical mechanical polishing (CMP). The planarization treatment can make the main surface of the substrate W flat, but on the other hand, a plurality of particles will remain on the main surface of the substrate W. The particles, for example, include at least one of slurry residues and pattern film residues (for example, metal residues such as copper). The size of such particles is relatively large, and the maximum size (maximum value) among the plurality of particles is, for example, greater than about 0.8 μm. Alternatively, the maximum value is, for example, greater than about 1 μm. As described below, the substrate processing device 100 can also remove larger particles from the main surface of the substrate W.

[0069] exist Figure 1 In the example shown in FIG, the substrate processing apparatus 100 includes a loader block 110, a processing block 120, and a control unit 90. The processing block 120 is a portion that primarily processes substrates W, and the loader block 110 is a portion that primarily transports substrates W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0070] The loading block 110 includes a loading port 111 and a first conveying unit 112. The carrier C brought in from the outside is loaded onto the loading port 111. That is, the loading port 111 includes a loading platform for loading the carrier C. The carrier C accommodates a plurality of substrates W. For example, the plurality of substrates W are arranged at intervals in the vertical direction and accommodated in the carrier C. Figure 1 In the example of , a plurality of loading ports 111 are arranged, and one carrier C is placed on each loading port 111 .

[0071] The first transport unit 112 is a transport robot that removes unprocessed substrates W from the carriers C placed in the load ports 111. The first transport unit 112 is also referred to as a loading robot. The first transport unit 112 transports unprocessed substrates W removed from the carriers C to the processing block 120. The processing block 120 processes the unprocessed substrates W. Furthermore, the first transport unit 112 receives processed substrates W from the processing block 120 and transfers them to the carriers C in the load ports 111.

[0072] exist Figure 1 In the example of FIG, the processing block 120 includes a plurality of processing units 1 and a second conveying unit 122. The second conveying unit 122 is a conveying robot that can convey substrates W between the first conveying unit 112 and the plurality of processing units 1. Figure 1 In the example, the processing block 120 also includes a loading section 123. The loading section 123 is arranged between the first conveying section 112 and the second conveying section 122. The loading section 123 is, for example, a shelf section that can load a plurality of substrates W in a state arranged in a vertical direction. The first conveying section 112 loads an unprocessed substrate W onto the loading section 123. The second conveying section 122 takes out the unprocessed substrate W from the loading section 123 and transports the unprocessed substrate W to the processing unit 1. The processing unit 1 processes the substrate W. The structure of the processing unit 1 will be described below. The second conveying section 122 takes out the processed substrate W from the processing unit 1 and transports the processed substrate W to the loading section 123. The first conveying section 112 takes out the processed substrate W from the loading section 123 and transports the processed substrate W to the carrier C of the loading port 111.

[0073] The second transport unit 122 may also transport the substrate W between a plurality of processing units 1 as needed. For example, the second transport unit 122 may transport the substrate W processed in one processing unit 1 to another processing unit 1 and then transport the substrate W processed in the other processing unit 1 to the loading unit 123 .

[0074] exist Figure 1 In the example of , a plurality of processing units 1 are arranged so as to surround the second conveying unit 122 in a plan view. The second conveying unit 122 is also called a center robot. Figure 1 In the example shown in FIG, four processing units 1 surround the second conveying section 122. At each position where the processing units 1 are installed when viewed from above, a plurality of processing units 1 may be stacked vertically. In other words, a plurality (four in the figure) of towers including a plurality of processing units 1 stacked vertically may be installed to surround the second conveying section 122 when viewed from above.

[0075] The control unit 90 generally controls the substrate processing apparatus 100 . Specifically, the control unit 90 controls the first conveyor 112 , the second conveyor 122 , and the processing unit 1 . Figure 2 1 is a block diagram schematically showing an example of the configuration of the control unit 90. The control unit 90 is an electronic circuit and includes, for example, a data processing unit 91 and a storage unit 92. Figure 2 In the specific example, the data processing unit 91 and the storage unit 92 are connected to each other via a bus 93. The data processing unit 91 can be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit 92 can have a non-temporary storage unit (such as a ROM (Read Only Memory)) 921 and a temporary storage unit (such as a RAM (Random Access Memory)) 922. A program that specifies the processing performed by the control unit 90 can be stored in the non-temporary storage unit 921. By executing the program by the data processing unit 91, the control unit 90 can perform the processing specified in the program. Of course, part or all of the processing performed by the control unit 90 can also be performed by hardware such as a dedicated logic circuit.

[0076] like Figure 2 As shown, the control unit 90 may also be electrically connected to the storage unit 94. The storage unit 94 is a non-transitory storage unit, such as a memory or a hard disk.

[0077] <Overview of Processing Unit>

[0078] Figure 3 1 is a longitudinal sectional view schematically showing an example of the structure of the processing unit 1. Note that not all processing units 1 belonging to the substrate processing apparatus 100 need to have Figure 3 As long as at least one processing unit 1 of the substrate processing apparatus 100 has Figure 3 The configuration shown in the example may be sufficient.

[0079] The processing unit 1 can perform a cleaning process to partially or completely remove particles from the main surface of the substrate W. The cleaning process includes a film formation process, in which a retaining film is formed on the main surface of the substrate W to secure the particles to the retaining film; and a stripping process, in which the retaining film and the particles are stripped from the main surface of the substrate W. These processes will be described in detail below.

[0080] The processing unit 1 includes a substrate holding portion 2 (corresponding to a first substrate holding portion), at least one nozzle 3 , and a sensor 6 .

[0081] exist Figure 3In the example shown in FIG. 1 , the processing unit 1 is also provided with a chamber 10. The chamber 10 has a box-like shape, and its interior space corresponds to a processing space for processing substrates W. The chamber 10 is provided with an openable and closable loading and unloading port (not shown). The second transport unit 122 loads unprocessed substrates W into the chamber 10 through the loading and unloading port and unloads processed substrates W from the chamber 10 through the loading and unloading port.

[0082] The substrate holder 2 is disposed within the chamber 10 and holds a substrate W in a horizontal position while rotating the substrate W about a rotation axis Q1. The horizontal position here refers to a position in which the thickness direction of the substrate W is aligned vertically. The rotation axis Q1 is an axis passing through the center of the substrate W and extending vertically. This type of substrate holder 2 is also referred to as a spin chuck.

[0083] exist Figure 3 In the example, the substrate holding portion 2 includes a rotating base 21, a chuck pin 22 and a rotation drive portion 23. The rotating base 21 has a plate-like shape (for example, a circular plate shape) and is arranged with its thickness direction along the vertical direction. A plurality of chuck pins 22 are provided on the upper surface of the rotating base 21. The plurality of chuck pins 22 are arranged at equal intervals along the circumference of the rotation axis Q1. The plurality of chuck pins 22 are arranged to be able to shift between a holding position and a release position described below. The holding position refers to the position where the chuck pin 22 abuts against the periphery of the substrate W. The plurality of chuck pins 22 hold the substrate W by stopping the plurality of chuck pins 22 at their respective holding positions. Figure 2 , the chuck pins 22 are shown stopped at the holding position. The release position refers to the position where each chuck pin 22 is clear of the substrate W. By stopping the plurality of chuck pins 22 at their respective release positions, the chuck pins 22 release their hold on the substrate W. The substrate holding portion 2 also includes a pin driving unit (not shown) for displacing the chuck pins 22. The pin driving unit includes a drive source such as a motor or an air cylinder and is controlled by the control unit 90.

[0084] The rotation drive unit 23 includes a shaft 231 and a motor 232. The upper end of the shaft 231 is connected to the lower surface of the spin base 21, and the shaft 231 extends from the lower surface of the spin base 21 along the rotation axis Q1. The motor 232 is controlled by the control unit 90 to rotate the shaft 231 about the rotation axis Q1. As a result, the spin base 21, the chuck pins 22, and the substrate W rotate integrally about the rotation axis Q1.

[0085] Furthermore, the substrate holding portion 2 does not necessarily have the chuck pins 22. For example, the substrate holding portion 2 may hold the substrate W using a chuck system such as a vacuum chuck, an electrostatic chuck, or a Bernoulli chuck.

[0086] The sensor 6 detects a plurality of particles on the main surface of the substrate W and measures parameters (such as size) of the particles. Figure 3In the example of FIG, the sensor 6 is disposed in the chamber 10 and includes a light source 61 and a light receiving portion 62. Figure 3 In the example of FIG, the light source 61 has a strip shape extending in the radial direction with respect to the rotation axis Q1. The light source 61 emits the measurement light toward the main surface of the substrate W. Figure 3 In the example shown, the nozzle 3 is positioned between the sensor 6 and the substrate W. However, during measurement using the sensor 6, the nozzle 3 moves to a position different from the area directly above the substrate W. Therefore, the measurement light is irradiated onto the main surface (here, the top surface) of the substrate W held by the substrate holder 2. Specifically, the measurement light is irradiated onto the main surface of the substrate W in a radially extending band-shaped area. This band can include the area from the center of the substrate W to the periphery of the substrate W.

[0087] exist Figure 3 In the example of FIG, the light receiving portion 62 has a strip shape extending along the radial direction of the substrate W. That is, Figure 3 In the example, the sensor 6 is a so-called line sensor. The light receiving portion 62 receives the light reflected from the main surface of the substrate W, and outputs a signal corresponding to the intensity of the reflected light to, for example, the control portion 90. The intensity of the reflected light after being reflected from the main surface of the substrate W varies depending on the particles on the main surface of the substrate W. For example, light is scattered by particles, and therefore, the intensity distribution of the reflected light presents a distribution corresponding to the distribution (size and number) of particles on the main surface of the substrate W. Therefore, the control portion 90 detects the particles at each position based on the signal from the light receiving portion 62 (the intensity distribution of the reflected light). In this case, it can also be considered that part of the function of the control portion 90 belongs to the sensor 6. As a specific example, the sensor 6 (control portion 90) calculates the size of each particle at each position on the main surface of the substrate W.

[0088] While the light source 61 of the sensor 6 emits measurement light, the substrate holder 2 rotates the substrate W. As a result, the light source 61 of the sensor 6 emits measurement light across the entire main surface of the substrate W. Thus, the sensor 6 can scan the entire main surface of the substrate W. The particle parameters (e.g., size) measured by the sensor 6 are used to determine the mixing ratio in the holding liquid, as will be described in detail below.

[0089] like Figure 3As shown, a sensor moving drive unit 63 for moving the sensor 6 between a measurement position and a standby position may also be provided in the processing unit 1. The measurement position is a position where the sensor 6 measures the parameters of the particles on the main surface of the substrate W, for example, a position where the sensor 6 and the main surface of the substrate W held by the substrate holding unit 2 are opposite in the vertical direction. The measurement position is, for example, a position where the longitudinal direction of the sensor 6 is along the radial direction. The standby position is a position where the sensor 6 does not measure the parameters of the particles on the main surface of the substrate W, for example, a position radially outward relative to the substrate W. An example of the specific structure of the sensor moving drive unit 63 may be the same as the nozzle moving drive unit 37 described below.

[0090] Furthermore, the sensor 6 does not necessarily need to be a long, linear sensor. For example, the radial lengths of the light source 61 and light receiving portion 62 of the sensor 6 may be sufficiently smaller than the radius of the substrate W. In other words, the sensor 6 may be a point sensor. In this case, the sensor movement drive unit 63 simply moves the sensor 6 horizontally back and forth between the center and periphery of the substrate W during measurement. This allows the sensor 6 to scan the entire main surface of the substrate W.

[0091] At least one nozzle 3 is provided in the chamber 10 to spray a processing liquid toward the main surface (here, the upper surface) of the substrate W held by the substrate holding portion 2. The processing liquid mentioned here is a general term for holding liquid, stripping liquid, and rinsing liquid. Specific examples of these liquids will be described below. Figure 3 In the example of FIG, a first nozzle 31, a second nozzle 41, and a third nozzle 51 are shown as the at least one nozzle 3.

[0092] The first nozzle 31 is provided in the chamber 10 and discharges the holding liquid toward the main surface of the substrate W held by the substrate holding portion 2. Figure 3 In the example of FIG, the first nozzle 31 is arranged vertically above the substrate W held by the substrate holding portion 2. The holding liquid is a mixed liquid obtained by mixing a polymer with an organic solvent. As described in detail below, the first target mixing ratio of the polymer to the organic solvent is determined based on the particles on the main surface of the substrate W. The first nozzle 31 is, for example, a straight nozzle that ejects the holding liquid in a continuous flow state. When the first nozzle 31 ejects the holding liquid toward the main surface of the substrate W and the substrate holding portion 2 rotates the substrate W, a liquid film of the holding liquid is formed on the main surface of the substrate W. The holding liquid film is solidified or hardened, and a holding film is formed on the main surface of the substrate W.

[0093] Here, "solidification" refers to, for example, the solidification of a solute by forces acting between molecules or atoms as the solvent evaporates. "Hardening" refers to the solidification of a substance by chemical changes such as polymerization or cross-linking. Therefore, "solidification" or "hardening" refers to the "solidification" of a substance due to various factors.

[0094] The retention liquid film covers and adheres closely to the particles on the main surface of the substrate W. Therefore, the retention film, after solidification, also closely covers the particles. Consequently, the particles are closely fixed to the retention film. In other words, the retention film holds the particles. The structure for supplying the retention liquid to the first nozzle 31 will be described in detail below.

[0095] The second nozzle 41 is provided in the chamber 10 and can eject the stripping liquid toward the main surface of the substrate W held by the substrate holding portion 2. Figure 3 In the example, the second nozzle 41 is arranged vertically above the substrate W held by the substrate holding portion 2. The stripping liquid is a liquid used to strip the retaining film on the main surface of the substrate W. The second nozzle 41 can be a straight nozzle that sprays the stripping liquid in a continuous flow state, or it can be an atomizing nozzle or a spray nozzle that sprays the stripping liquid in a droplet state. By supplying the stripping liquid to the main surface of the substrate W, the retaining film on the main surface of the substrate W is stripped. As a result, the particles are stripped together with the retaining film, and the particles are removed from the main surface of the substrate W. Furthermore, the structure for supplying the stripping liquid to the second nozzle 41 will be described in detail below.

[0096] exist Figure 3 In the example of , a third nozzle 51 is also provided in the processing unit 1. The third nozzle 51 is provided in the chamber 10 and can spray the rinse liquid toward the main surface of the substrate W held by the substrate holding portion 2. Figure 3 In the example, the third nozzle 51 is arranged vertically above the substrate W held by the substrate holding portion 2. The third nozzle 51 is, for example, a straight nozzle that ejects the rinsing liquid in a continuous flow state. For example, after supplying the stripping liquid to the main surface of the substrate W, the third nozzle 51 ejects the rinsing liquid toward the main surface of the substrate W. As a result, the rinsing liquid can wash away the stripping liquid on the main surface of the substrate W. In other words, the stripping liquid on the main surface of the substrate W is replaced by the rinsing liquid. Furthermore, the structure for supplying the rinsing liquid to the third nozzle 51 will be described in detail below.

[0097] exist Figure 3 In the example shown, the downstream end of the liquid supply tube 32 is connected to the first nozzle 31. The upstream end of the liquid supply tube 32 is connected to the downstream end of the first liquid supply tube 33a, the downstream end of the second liquid supply tube 33b, and the downstream end of the third liquid supply tube 33c. The upstream end of the first liquid supply tube 33a is connected to the first liquid supply source, the upstream end of the second liquid supply tube 33b is connected to the second liquid supply source, and the upstream end of the third liquid supply tube 33c is connected to the third liquid supply source.

[0098] The first liquid supply source supplies the first liquid to the downstream end of the first liquid supply tube 33a. The first liquid is a liquid containing the first polymer, for example, a liquid containing both the first polymer and an organic solvent. The first polymer is, for example, dissolved in the organic solvent. The mixing ratio (concentration) of the first polymer in the first liquid is relatively high, for example, at a saturated concentration.

[0099] The first polymer, for example, comprises at least one of a copolymer of novolac, polyhydroxystyrene, polystyrene, polyacrylic acid derivatives, polymaleic acid derivatives, polycarbonate, polyvinyl alcohol derivatives, polymethacrylic acid derivatives, and combinations thereof. Preferably, the first polymer comprises at least one of a copolymer of novolac, polyhydroxystyrene, polyacrylic acid derivatives, polycarbonate, polymethacrylic acid derivatives, and combinations thereof. Further preferably, the first polymer comprises at least one of a copolymer of novolac, polyhydroxystyrene, polycarbonate, and combinations thereof. Novolac may also be a phenolic novolac. The copolymerization is preferably random copolymerization or block copolymerization.

[0100] The first polymer may also include one or more of the above preferred examples in combination. For example, the first polymer may include both novolac and polyhydroxystyrene. Preferably, the first polymer does not contain fluorine and / or silicon, and more preferably, does not contain both.

[0101] Examples of the organic solvent include alcohols such as isopropyl alcohol (IPA), ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate, propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether (PGEE), propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monoethyl ether acetate, lactic acid esters such as methyl lactate and ethyl lactate (EL), aromatic hydrocarbons such as toluene and xylene, ketones such as methyl ethyl ketone, 2-heptanone and cyclohexanone, amides such as N,N-dimethylacetamide and N-methylpyrrolidone, lactones such as γ-butyrolactone, etc. These organic solvents may be used alone or in combination of two or more.

[0102] The second liquid supply source supplies the second liquid to the downstream end of the second liquid supply tube 33b. The second liquid is a liquid containing the second polymer, for example, a liquid containing both the second polymer and an organic solvent. The second polymer is, for example, dissolved in the organic solvent.

[0103] The second polymer is more soluble in the stripping solution than the first polymer. For example, the solubility of the second polymer in the stripping solution is higher than the solubility of the first polymer in the stripping solution. The second polymer is, for example, 2,2-bis(4-hydroxyphenyl)propane.

[0104] Examples of the organic solvent are as described above, and may be the same type of organic solvent as that in the first liquid. The mixing ratio (concentration) of the second polymer in the second liquid is relatively high, for example, at a saturated concentration.

[0105] The third liquid supply source supplies the third liquid to the downstream end of the third liquid supply pipe 33c. The third liquid is, for example, an organic solvent. Examples of organic solvents are described above. The third liquid may also be the same type of organic solvent as the first and second liquids.

[0106] exist Figure 3 In the example shown in FIG. 1 , a supply valve 34a and a flow rate regulating valve 35a are installed in the first liquid supply pipe 33a, a supply valve 34b and a flow rate regulating valve 35b are installed in the second liquid supply pipe 33b, and a supply valve 34c and a flow rate regulating valve 35c are installed in the third liquid supply pipe 33c. These valves are controlled by the control unit 90.

[0107] Supply valve 34a switches the first liquid supply pipe 33a open and closed, supply valve 34b switches the second liquid supply pipe 33b open and closed, and supply valve 34c switches the third liquid supply pipe 33c open and closed. Flow control valve 35a adjusts the flow rate of the first liquid flowing through the first liquid supply pipe 33a, flow control valve 35b adjusts the flow rate of the second liquid flowing through the second liquid supply pipe 33b, and flow control valve 35c adjusts the flow rate of the third liquid flowing through the third liquid supply pipe 33c. Each of flow control valves 35a, 35b, and 35c may also be a mass flow controller.

[0108] With supply valves 34a, 34b, and 34c open, the first liquid, second liquid, and third liquid are supplied to the upstream end of the liquid supply pipe 32 through the first liquid supply pipe 33a, the second liquid supply pipe 33b, and the third liquid supply pipe 33c, respectively. Thus, a retention liquid, which is a mixture of the first liquid, the second liquid, and the third liquid, flows through the liquid supply pipe 32. Specifically, the retention liquid herein is a liquid comprising the first polymer, the second polymer, and the organic solvent. The retention liquid is supplied to the first nozzle 31 through the liquid supply pipe 32 and is ejected from the first nozzle 31.

[0109] In this structure, the liquid supply pipe 32, the first liquid supply pipe 33a, the second liquid supply pipe 33b and the third liquid supply pipe 33c function as a mixing unit 30 for supplying a holding liquid obtained by mixing a polymer and an organic solvent to the first nozzle 31. The mixing unit 30 can mix the polymer and the organic solvent at a variable mixing ratio. Figure 3In the example of , the mixing unit 30 includes a flow control valve 35a, a flow control valve 35b, and a flow control valve 35c. The flow control valves 35a, 35b, and 35c adjust the flow rates of the first liquid, the second liquid, and the third liquid, respectively, to adjust the mixing ratio.

[0110] The control unit 90 determines a first target mixing ratio of the polymer to the organic solvent in the retaining liquid based on the parameters (e.g., size) of the particles on the main surface of the substrate W. The first target mixing ratio is a target value of the first mixing ratio of the polymer (the sum of the first polymer and the second polymer) to the organic solvent. Furthermore, the control unit 90 controls the mixing unit 30 based on the first target mixing ratio. As a specific example, the control unit 90 controls the flow control valve 35a, the flow control valve 35b, and the flow control valve 35c of the mixing unit 30 in the following manner, that is, the larger the particle size, the higher the first target mixing ratio is determined to be, so that the difference between the first mixing ratio in the retaining liquid and the first target mixing ratio becomes less than the reference value.

[0111] exist Figure 3 In the example of , the processing unit 1 includes a nozzle moving drive unit 37 that moves the first nozzle 31. The nozzle moving drive unit 37 moves the first nozzle 31 between a first processing position and a first standby position described below. The first processing position refers to a position where the first nozzle 31 sprays a holding liquid toward the center of the main surface of the substrate W held by the substrate holding unit 2, for example, a position vertically opposite to the center of the substrate W. Figure 3 In the example shown, the first nozzle 31 is located at the first processing position. The first standby position is a position where the first nozzle 31 does not eject the holding liquid toward the main surface of the substrate W, for example, a position radially outward of the substrate W.

[0112] exist Figure 3 In the example, the nozzle movement drive unit 37 includes an arm 371, a support column 372 and a drive source 373. The support column 372 is arranged radially outward relative to the shield 71 described below, and extends in the vertical direction. The arm 371 extends in the horizontal direction, with its top end connected to the first nozzle 31 and its base end connected to the support column 372. The drive source 373 is controlled by the control unit 90 to rotate the support column 372 around its central axis Q2. The drive source 373 includes, for example, a motor. When the support column 372 rotates around the central axis Q2, the first nozzle 31 moves circumferentially about the central axis Q2. The support column 372 is arranged in such a way that the first processing position and the first standby position are located on the movement trajectory of the first nozzle 31. Furthermore, the nozzle movement drive unit 37 is not necessarily limited to Figure 3 For example, it may also include a linear motion mechanism such as a linear motor.

[0113] exist Figure 3In the example, the downstream end of the liquid supply tube 42 is connected to the second nozzle 41. The upstream end of the liquid supply tube 42 is connected to a stripping liquid supply source. The stripping liquid supply source supplies the stripping liquid to the downstream end of the liquid supply tube 42. The stripping liquid is a liquid used to strip the retaining film on the main surface of the substrate W. The stripping liquid can be, for example, pure water (in other words, deionized water), an alkaline aqueous solution (alkaline liquid), or any neutral or acidic aqueous solution (non-alkaline aqueous solution). As specific examples of alkaline aqueous solutions, ammonia water, SC1 solution (ammonia-hydrogen peroxide mixture), TMAH (Tetramethylammonium hydroxide) aqueous solution, choline aqueous solution, and any combination thereof can be used.

[0114] exist Figure 3 In the example shown, a supply valve 44 and a flow control valve 45 are installed in the liquid supply pipe 42. The supply valve 44 switches the liquid supply pipe 42 open and closed, and the flow control valve 45 adjusts the flow rate of the stripping liquid flowing through the liquid supply pipe 42. The flow control valve 45 can also be a mass flow controller. These valves are controlled by the control unit 90.

[0115] exist Figure 3 In the example, a nozzle moving drive unit 47 for moving the second nozzle 41 is provided in the processing unit 1. The nozzle moving drive unit 47 is controlled by the control unit 90 to move the second nozzle 41 between the second processing position and the second standby position described below. The second processing position refers to a position where the second nozzle 41 sprays the stripping liquid toward the center of the main surface of the substrate W held by the substrate holding unit 2, for example, a position opposite to the center of the substrate W in the vertical direction. The second standby position refers to a position where the second nozzle 41 does not spray the stripping liquid toward the main surface of the substrate W, for example, a position radially outward of the substrate W. In Figure 3 In the example of FIG, the second nozzle 41 located at the second standby position is schematically shown. An example of a specific configuration of the nozzle movement drive unit 47 is the same as that of the nozzle movement drive unit 37.

[0116] exist Figure 3 In the example, the downstream end of the liquid supply pipe 52 is connected to the third nozzle 51. The upstream end of the liquid supply pipe 52 is connected to a rinsing liquid supply source. The rinsing liquid supply source supplies the rinsing liquid to the downstream end of the liquid supply pipe 52. The rinsing liquid includes, for example, at least one of pure water (in other words, deionized water) and an organic solvent.

[0117] exist Figure 3In the example shown, a supply valve 54 and a flow control valve 55 are installed in the liquid supply pipe 52. The supply valve 54 switches the liquid supply pipe 52 open and closed, and the flow control valve 55 adjusts the flow rate of the flushing liquid flowing through the liquid supply pipe 52. The flow control valve 55 can also be a mass flow controller. These valves are controlled by the control unit 90.

[0118] exist Figure 3 In the example, a nozzle moving drive unit 57 for moving the third nozzle 51 is provided in the processing unit 1. The nozzle moving drive unit 57 is controlled by the control unit 90 to move the third nozzle 51 between the third processing position and the third standby position described below. The third processing position refers to a position where the third nozzle 51 sprays a rinse liquid toward the center of the main surface of the substrate W held by the substrate holding unit 2, for example, a position vertically opposite to the center of the substrate W. The third standby position refers to a position where the third nozzle 51 does not spray a rinse liquid toward the main surface of the substrate W, for example, a position radially outward of the substrate W. In Figure 3 In the example of FIG. 5 , the third nozzle 51 located at the third standby position is schematically shown. An example of a specific configuration of the nozzle movement drive unit 57 is the same as that of the nozzle movement drive unit 37 .

[0119] exist Figure 3 In the example, a shield 71 is provided in the processing unit 1 to catch various processing liquids flying from the periphery of the substrate W. The shield 71 is raised and lowered between a shield processing position and a shield standby position, which will be described below, by a shield lifting drive unit 73. The shield processing position is a position in which the upper end of the shield 71 is located vertically above the upper surface of the substrate W held by the substrate holding unit 2. When the shield 71 stops at the shield processing position, the processing liquid flying from the periphery of the substrate W is caught by the inner peripheral surface of the shield 71. The shield standby position is a position lower than the shield processing position, for example, a position in which the upper end of the shield 71 is located below the upper surface of the rotating base 21. The shield lifting drive unit 73 may include, for example, a motor as a driving source and a ball screw mechanism as a driving mechanism. Alternatively, the shield lifting drive unit 73 may also include a cylinder. The shield lifting drive unit 73 is controlled by the control unit 90.

[0120] exist Figure 3 In the embodiment of the present invention, drainage grooves 72 are provided corresponding to the shields 71. Each drainage groove 72 receives the processing liquid flowing down the inner peripheral surface of the corresponding shield 71. The upstream end of a drainage pipe 74 is connected to the bottom surface of each drainage groove 72. The processing liquid is recovered from the drainage groove 72 through the drainage pipe 74.

[0121] A heating unit 8 for heating the substrate W held by the substrate holding unit 2 may be provided in the processing unit 1. Figure 3 In the example of FIG, the heating unit 8 includes a lower surface nozzle 81. The lower surface nozzle 81 sprays a high-temperature heat medium toward the lower surface of the substrate W. Figure 3 In the example, a through hole is formed in the central part of the rotating base 21, the shaft 231 is a hollow shaft, and the lower surface nozzle 81 penetrates the through hole of the rotating base 21 and the hollow part of the shaft 231 in the vertical direction. The upper end (i.e., the nozzle) of the lower surface nozzle 81 is opposite to the lower surface of the substrate W in the vertical direction. The lower surface nozzle 81 is connected to the downstream end of the piping 82, and the upstream end of the piping 82 is connected to the heat medium supply source. The heat medium supply source supplies high-temperature heat medium to the upstream end of the piping 82. The heat medium is a high-temperature gas (such as an inert gas) or a liquid (such as water). A supply valve 83 is installed in the piping 82. The supply valve 83 is controlled by the control unit 90 to switch the opening and closing of the piping 82.

[0122] Furthermore, the heating unit 8 does not necessarily need to supply the heat medium to the lower surface of the substrate W. For example, the heating unit 8 may also supply high-temperature gas to the upper surface of the substrate W. Furthermore, the heating unit 8 does not necessarily need to supply the heat medium to the substrate W. The heating unit 8 may also be, for example, a resistive heater with a heating wire or an optical heater with a light source such as infrared light. This heater is, for example, disposed between the substrate W and the spin base 21.

[0123] <Example of Operation of Substrate Processing Apparatus>

[0124] Next, an example of the operation of the processing unit 1 will be described. Specifically, an example of a cleaning process for removing part or all of particles on the main surface of the substrate W will be described. Figure 4 1 is a flowchart showing an example of the operation of the processing unit 1. The control unit 90 causes the substrate processing apparatus 100 to execute the processing from step S1 to step S9 according to a preset processing sequence (protocol).

[0125] First, the second transport unit 122 transports the substrate W to the processing unit 1, and the substrate holder 2 holds the substrate W received from the second transport unit 122 (step S1: holding process). As a specific example, the substrate holder 2 shifts the plurality of chuck pins 22 from their respective release positions to the holding position. Thus, the plurality of chuck pins 22 hold the substrate W. The substrate holder 2 continues to hold the substrate W until processing of the substrate W is completed. The main surface (here, the top surface) of the substrate W is flat, and a plurality of particles are attached to the main surface of the substrate W.

[0126] Next, the sensor 6 detects the particles on the main surface of the substrate W and measures the parameters of the particles (step S2: measurement process). Specifically, first, the sensor movement drive unit 63 moves the sensor 6 to the measurement position. Then, the substrate holding unit 2 rotates the substrate W around the rotation axis Q1, and the light source 61 of the sensor 6 emits measurement light toward the main surface of the substrate W. The light receiving unit 62 of the sensor 6 receives the measurement light reflected by the main surface of the substrate W, and the reflected light on the entire main surface of the substrate W can be obtained. Based on the intensity distribution of the reflected light, the sensor 6 calculates the particle size at each position on the main surface of the substrate W. Next, the sensor movement drive unit 63 moves the sensor 6 to the standby position.

[0127] Then, the control unit 90 determines the first target mixing ratio based on the particle size measured by the sensor 6 (step S3: mixing ratio determination process). The first target mixing ratio is a target value for the first mixing ratio of the polymer to the organic solvent. The first mixing ratio mentioned here represents the ratio (for example, mass concentration) of the polymer (the first polymer and the second polymer) to the organic solvent. Such a ratio can be adjusted by the flow regulating valve 35a, the flow regulating valve 35b and the flow regulating valve 35c. For example, the first mixing ratio can be increased by reducing the flow rate of the organic solvent by the flow regulating valve 35c. In addition, the first mixing ratio can also be increased by increasing the flow rate of the first liquid and the second liquid by the flow regulating valve 35a and the flow regulating valve 35b respectively. Furthermore, the second mixing ratio of the second polymer to the first polymer (hereinafter referred to as the second mixing ratio) can also be fixed. In other words, the flow ratio of the first liquid to the second liquid can also be fixed.

[0128] The control unit 90 determines the first target mixing ratio to be greater when the particle size is a first value than when the particle size is a second value smaller than the first value. In short, the control unit 90 determines the first target mixing ratio based on a positive correlation with the particle size. The control unit 90 may also determine the first target mixing ratio based on the size of the largest particle among the particles on the main surface of the substrate W. That is, the control unit 90 determines the first target mixing ratio to be greater when the maximum particle size is a first value than when the maximum particle size is a second value.

[0129] Figure 5 : is a graph showing an example of the first correspondence relationship between the particle size and the first target mixing ratio. Figure 5 As shown by the solid line, the control unit 90 may also determine the first target mixing ratio in such a manner that the first target mixing ratio increases stepwise with respect to the increase in the particle size (maximum value). Alternatively, Figure 5As shown by the dotted line, the control unit 90 may determine the first target mixing ratio so that the first target mixing ratio continuously increases with increasing particle size. In short, the control unit 90 may determine the first target mixing ratio so that the first target mixing ratio monotonically increases with increasing particle size.

[0130] The first correspondence between the particle size and the first target mixing ratio may also be preset. For example, the first correspondence data D1 indicating the first correspondence may be stored in the storage unit 94 (see also FIG. Figure 2 、 3 The first correspondence data D1 may be a table or a function. The first correspondence is set in advance, for example, through simulation or experiment.

[0131] The control unit 90 determines a first target mixing ratio based on the particle size measured by the sensor 6 and the first correspondence data D1 stored in the storage unit 94 .

[0132] As described above, the second mixing ratio of the second polymer to the first polymer may be fixed. In this case, the mixing ratio of the first polymer to the organic solvent and the mixing ratio of the second polymer to the organic solvent are determined to be higher as the particle size increases.

[0133] Next, the processing unit 1 supplies the holding liquid to the main surface of the substrate W (step S4 : liquid film step). Figure 6 This diagram schematically illustrates an example of the process of the processing unit 1 during steps S4 and S5. Specifically, the shield lift drive 73 first moves the shield 71 to the shield processing position, and the nozzle movement drive 37 moves the first nozzle 31 to the first processing position. Subsequently, the substrate holder 2 rotates the substrate W, and the control unit 90 opens the supply valves 34a, 34b, and 34c, adjusting the mixing ratio in the mixing unit 30 based on the first target mixing ratio determined in step S3.

[0134] Thus, the first nozzle 31 ejects the holding liquid having the first mixing ratio corresponding to the particle size toward the main surface of the rotating substrate W (see also FIG. Figure 6 (a) The retention liquid landed on the main surface of the substrate W spreads on the main surface of the substrate W as the substrate W rotates and scatters outward from the periphery of the substrate W. As a result, a retention liquid film is formed on the main surface of the substrate W.

[0135] When a predetermined amount of the holding liquid is supplied, the control unit 90 closes the supply valves 34a, 34b, and 34c. Then, the nozzle movement drive unit 37 moves the first nozzle 31 to the first standby position.

[0136] The thickness of the retention liquid film can be adjusted by the rotational speed of the substrate W in step S4. The rotational speed of the substrate W is set, for example, within a range of 300 rpm to 1500 rpm. This allows a retention liquid film of a predetermined thickness to be formed on the main surface of the substrate W. The film thickness can be increased as the particle size increases. In other words, the rotational speed of the substrate W can be set to decrease as the particle size increases.

[0137] Then, the processing unit 1 solidifies or hardens the liquid film of the retaining liquid (step S5: retaining film forming process). For example, the processing unit 1 may place the substrate W for a predetermined processing time. During the processing time, at least a portion of the organic solvent in the liquid film on the substrate W evaporates, thereby forming a retaining film. In order to promote the evaporation of the organic solvent, the processing unit 1 may heat the substrate W. For example, the heating unit 8 may heat the lower surface of the substrate W (see also Figure 6 (b)). Specifically, the control unit 90 opens the supply valve 83. This causes a high-temperature heat medium to be ejected from the lower surface nozzle 81 toward the lower surface of the substrate W. The heat medium flows radially outward along the lower surface of the substrate W and disperses outward from the periphery of the substrate W. The heat medium exchanges heat with the substrate W, heating the substrate W, thereby heating the liquid film of the retention liquid on the main surface of the substrate W.

[0138] Figure 7 1 is a cross-sectional view schematically showing an example of a structure of a portion of the substrate W. A retaining film 200 is formed on the main surface of the substrate W. Figure 7 As shown, the retaining film 200 tightly covers the particles 300 on the main surface of the substrate W. That is, the retaining film 200 can retain the particles 300. The retaining film 200 is divided into a first portion 201 formed of a first polymer and a second portion 202 formed of a second polymer. The second portion 202 is unevenly distributed in the retaining film 200. Figure 7 In the example of , the first portion 201 closely covers the particle 300, so the first portion 201 holds the particle 300. Figure 7 It is understood that the second mixing ratio of the second polymer to the first polymer is less than 1. The second mixing ratio may also be less than 0.5.

[0139] In step S5, the organic solvent evaporates from the liquid film of the retaining liquid to form retaining film 200. Therefore, the thickness of retaining film 200 is smaller than the thickness of the liquid film of the retaining liquid. The thickness of retaining film 200 can be simply considered to be the thickness after the organic solvent is removed from the liquid film of the retaining liquid. Therefore, the lower the ratio of the organic solvent in the liquid film of the retaining liquid, the thicker the retaining film 200. In other words, the lower the first mixing ratio of the polymer to the organic solvent (= polymer amount / organic solvent amount), the thicker the retaining film 200.

[0140] In this embodiment, the larger the size of the particles 300 is, the higher the first mixing ratio in the retention liquid is. Therefore, the larger the size of the particles 300 is, the thicker the retention film 200 is formed.

[0141] Here, the higher the first mixing ratio of the polymer, the higher the viscosity of the retaining liquid. Therefore, in step S4, the processing unit 1 can more easily form the retaining liquid film to be thicker. Therefore, the processing unit 1 can easily form the retaining film 200 to be thicker.

[0142] Conversely, the smaller the size of the particles 300, the lower the first mixing ratio in the retention liquid. In other words, the ratio of the organic solvent in the retention liquid is higher. The thickness of the retention film 200 can be considered to be the thickness of the film when the organic solvent is removed from the liquid film of the retention liquid. Therefore, the higher the ratio of the organic solvent, the more organic solvent evaporates. Therefore, the thickness of the retention film 200 decreases in step S5. In other words, the processing unit 1 easily forms a thinner retention film 200.

[0143] Here, the lower the first mixing ratio of the polymer, the lower the viscosity of the retaining liquid. Therefore, in step S4, the processing unit 1 can more easily form the retaining liquid film to be thinner. Therefore, the processing unit 1 can easily form the retaining film 200 to be thinner.

[0144] It should be noted that steps S4 and S5 can be considered as film forming processes for forming a holding film on the main surface of the substrate W so that the particles are closely adhered and fixed to the holding film.

[0145] Then, the processing unit 1 supplies the stripping liquid to the main surface of the substrate W (step S6: stripping process). Specifically, first, the nozzle movement drive unit 47 moves the second nozzle 41 to the second processing position. Then, the substrate holding unit 2 rotates the substrate W, and the control unit 90 opens the supply valve 44. As a result, the second nozzle 41 sprays the stripping liquid toward the main surface of the rotating substrate W (see also Figure 6 (c) The stripping liquid that has landed on the main surface of the substrate W spreads on the main surface of the substrate W as the substrate W rotates, and scatters outward from the periphery of the substrate W. As a result, the stripping liquid acts on the retaining film 200 on the main surface of the substrate W.

[0146] Figure 8 This is a cross-sectional view schematically showing an example of the situation on the main surface of the substrate W in step S6. The second polymer forming the second portion 202 is more easily dissolved in the stripping liquid than the first polymer forming the first portion 201. Therefore, the second portion 202 is removed faster than the first portion 201. Therefore, the first portion 201 is easily separated at the second portion, and the first portion 201 is peeled off from the main surface of the substrate W in a state of a block with a certain size. Figure 8In the example, the first portion 201 holds the particle 300 , and therefore the particle 300 leaves the main surface of the substrate W in a state of being fixed to the first portion 201 .

[0147] For comparison, a case where the film thickness of the retention film 200 is thin relative to the size of the particle 300 will be described. Figure 9 1 is a diagram showing an example of a partial structure of a substrate W of a comparative example. Figure 9 In the example of , the retaining film 200 is thinner than the size of the particle 300. Therefore, the retaining film 200 is insufficient in strength and may separate from the particle 300, resulting in only the retaining film 200 being peeled off. In other words, there is a concern that the particle 300 cannot be properly removed.

[0148] In contrast, in this embodiment, the larger the particle 300, the higher the first mixing ratio of the polymer in the retaining liquid. This makes it easier to thicken the retaining film 200. Consequently, even with larger particles 300, the strength of the retaining film 200 is less likely to be insufficient, allowing the retaining film 200 to be peeled off along with the particles 300. In other words, the first correspondence data D1 is pre-set so that the thickness of the retaining film 200 is at least a value sufficient to remove larger particles 300.

[0149] Furthermore, when the particles 300 are small, the first mixing ratio of the polymer in the retaining liquid decreases. Therefore, the retaining film 200 can be made thinner by evaporation of the organic solvent. Consequently, when the particles 300 are small, the retaining film 200 can be prevented from being unnecessarily thickened. Furthermore, the amount of polymer used can be reduced.

[0150] Note that step S6 can be considered as a peeling process for peeling the holding film from the main surface of the substrate W together with the particles.

[0151] When the retaining film 200 is fully removed, the processing unit 1 stops supplying the stripping liquid. Specifically, when a predetermined stripping time has elapsed since the stripping liquid was supplied, the control unit 90 closes the supply valve 44. This time is measured, for example, by a timer circuit (not shown) within the control unit 90. Subsequently, the nozzle movement drive unit 47 moves the second nozzle 41 to the second standby position.

[0152] Then, the processing unit 1 supplies the rinsing liquid to the main surface of the substrate W (step S7: rinsing process). Specifically, first, the nozzle movement drive unit 57 moves the third nozzle 51 to the third processing position. Then, the substrate holding unit 2 rotates the substrate W, and the control unit 90 opens the supply valve 54. As a result, the third nozzle 51 sprays the rinsing liquid toward the center of the main surface of the rotating substrate W. The rinsing liquid lands on the center of the main surface of the substrate W, diffuses on the main surface of the substrate W, and flies outward from the periphery of the substrate W. The rinsing liquid that lands on the center of the main surface of the substrate W washes away the stripping liquid on the main surface of the substrate W radially outward, so that the stripping liquid on the main surface of the substrate W can be replaced with the rinsing liquid.

[0153] When the stripping liquid on the main surface of the substrate W is fully replaced with the rinse liquid, the processing unit 1 stops supplying the rinse liquid. Specifically, when a predetermined rinse processing time has elapsed since the start of the rinse liquid supply, the control unit 90 closes the supply valve 54. Subsequently, the nozzle movement drive unit 57 moves the third nozzle 51 to the third standby position.

[0154] Next, the processing unit 1 performs a drying process (step S8: drying step). Specifically, the substrate holding unit 2 increases the rotation speed of the substrate W (so-called spin drying).

[0155] When the substrate W is sufficiently dry, the processing unit 1 ends the drying process. Specifically, when a predetermined drying time has elapsed since the start of the drying process, the substrate holder 2 stops rotating the substrate W. This substantially completes the drying process, and the entire series of processing on the substrate W is essentially complete.

[0156] Next, the substrate holder 2 releases its hold on the substrate W (step S9: release process). Specifically, the substrate holder 2 shifts the plurality of chuck pins 22 from their respective holding positions to release positions. This releases the plurality of chuck pins 22 from holding the substrate W. The second transport unit 122 then unloads the processed substrate W from the processing unit 1.

[0157] Effects

[0158] As described above, according to this substrate processing method, the larger the size of the particles 300, the higher the first target mixing ratio in the retention liquid. Therefore, in step S6 (retention film formation process), as a relatively small amount of organic solvent evaporates from the retention liquid film, the retention liquid film solidifies to form a retention film. Therefore, the processing unit 1 can more easily form a thicker retention film 200. A thicker retention film 200 allows for more appropriate removal of particles 300, even if they are large.

[0159] Conversely, the smaller the size of the particles 300, the lower the first target mixing ratio in the retention liquid. Therefore, in step S6, as a relatively large amount of organic solvent evaporates from the retention liquid film, the retention liquid film solidifies to form a retention film. Consequently, the processing unit 1 can more easily form a thinner retention film 200. Even with a thin retention film 200, smaller particles 300 can be more appropriately removed. Furthermore, the amount of polymer used can be reduced.

[0160] In addition, here, the higher the first mixing ratio is, the higher the viscosity of the liquid is maintained. Therefore, if the size of the particles 300 is large, the viscosity of the liquid is maintained relatively high. Therefore, in step S4 (liquid film forming process), the processing unit 1 can more easily form the liquid film of the liquid to be thicker. Then, the processing unit 1 can more easily form a maintenance film with a larger film thickness in step S6. On the contrary, if the size of the particles 300 is small, the viscosity of the liquid is maintained relatively low. Therefore, in step S4, the processing unit 1 can more easily form the liquid film of the liquid to be thinner. Then, the processing unit 1 can more easily form a maintenance film with a smaller film thickness in step S6.

[0161] Furthermore, in the above example, the control unit 90 determines the first target mixing ratio based on the maximum size of the particles 300. Consequently, the retaining film 200 is formed with a thickness corresponding to the maximum size. A retaining film 200 having a thickness corresponding to the maximum size can appropriately retain not only the largest particles but also smaller particles. Consequently, the processing unit 1 can more reliably remove the particles 300.

[0162] Furthermore, in the above example, the storage unit 94 stores first correspondence data D1 indicating a first correspondence between the size of the particles 300 and the first target mixing ratio. The control unit 90 determines the first target mixing ratio based on the first correspondence data D1. Therefore, the control unit 90 can determine the first target mixing ratio using simpler processing. In other words, the processing load on the control unit 90 can be reduced, thereby lowering the power consumption of the control unit 90.

[0163] In the above example, the sensor 6 is provided. Therefore, it is possible to measure the parameters (size) of the particles 300 on the main surface of the substrate W. The control unit 90 can determine the first target mixing ratio based on the actual size of the particles 300, thereby more appropriately determining the first target mixing ratio.

[0164] Furthermore, in the above example, the sensor 6 is located within the same chamber 10 as the components that supply the holding liquid, stripping liquid, and rinsing liquid to the substrate W. Therefore, the sensor 6 can detect particles 300 on the main surface of the substrate W immediately before the cleaning process begins. That is, the period from the time the sensor 6 measures the particle size to the actual start of the cleaning process (the start of supplying the holding liquid) is very short. Therefore, the likelihood of new particles adhering to the main surface of the substrate W during this period is very low. Consequently, the control unit 90 can determine a more appropriate first target mixing ratio based on the more accurate measured value.

[0165] <Mixing ratio of the second polymer to the first polymer>

[0166] according to Figure 7 and Figure 8 It is understood that in order for the first portion 201 to separate at the second portion 202, it is ideal to have a second portion 202 that is long in the thickness direction of the retaining film 200. However, if the thickness of the retaining film 200 is particularly large, and the ratio of the second polymer in the retaining liquid is low, it is difficult to form a second portion 202 that is sufficiently long relative to the thickness of the retaining film 200. On the other hand, if the ratio of the second polymer in the retaining liquid is too high when the thickness of the retaining film 200 is small, then a large number of second portions 202 are unevenly distributed relative to the first portion 201. Consequently, the size of the first portion 201 that is separated at the second portion 202 is too small, resulting in insufficient exfoliation of the particles 300.

[0167] Therefore, the control unit 90 may also determine the second target mixing ratio of the second polymer to the first polymer based on the parameters (such as size) of the particles 300 on the main surface of the substrate W. The second target mixing ratio is a target value for the second mixing ratio of the second polymer to the first polymer in the retaining liquid. The control unit 90 determines the second target mixing ratio when the particle size is the first value to be larger than the second target mixing ratio when the particle size is the second value smaller than the first value. In short, the control unit 90 determines the second target mixing ratio based on a relationship that is positively correlated with the particle size. The control unit 90 may also determine the second target mixing ratio based on the size of the largest particle among the particles on the main surface of the substrate W. That is, the control unit 90 determines the second target mixing ratio when the maximum value of the particle size is the first value to be larger than the second target mixing ratio when the maximum value of the particle size is the second value.

[0168] Figure 10 3 is a graph showing an example of the second correspondence relationship between the size of the particles 300 and the second target mixing ratio. Figure 10 As shown by the solid line, the control unit 90 may determine the second target mixing ratio in a manner that the second target mixing ratio increases stepwise with respect to the maximum value of the size of the particles 300. Alternatively, Figure 10As shown by the dotted line, the control unit 90 may determine the second target mixing ratio so that the second target mixing ratio continuously increases as the maximum value of the particle size increases. In other words, the control unit 90 may determine the second target mixing ratio so that the second target mixing ratio monotonically increases with the particle size.

[0169] The second correspondence between the particle size and the second target mixing ratio can also be preset. For example, the second correspondence data D2 indicating the second correspondence can also be stored in the storage unit 94 (see also Figure 2 、 3 The second correspondence data D2 may be a table or a function. The second correspondence is preset, for example, through simulation or experiment.

[0170] The control unit 90 determines the second target mixing ratio based on the particle size measured by the sensor 6 and the second correspondence data D2 stored in the storage unit 94 .

[0171] An example of a substrate processing method and Figure 4 The same. However, in step S3 (mixing ratio determination step), the control unit 90 determines both the first target mixing ratio and the second target mixing ratio based on the parameters (e.g., size) of the particles 300. Furthermore, in step S4 (liquid film formation step), the control unit 90 controls the mixing unit 30 based on the first target mixing ratio and the second target mixing ratio. Specifically, the control unit 90 controls the flow control valves 35a, 35b, and 35c of the mixing unit 30 so that the difference between the first mixing ratio and the first target mixing ratio and the difference between the second mixing ratio and the second target mixing ratio are equal to or less than their respective reference values.

[0172] Even with this substrate processing method, the larger the size of the particles 300 on the main surface of the substrate W, the higher the first target mixing ratio. Therefore, when the size of the particles 300 is large, the processing unit 1 can more easily form a thicker retaining film 200. In addition, according to this substrate processing method, the larger the size of the particles 300, the higher the second target mixing ratio. Therefore, even if the film thickness of the retaining film 200 is large, the processing unit 1 can form more second parts 202, and the second parts 202 are sufficiently long in the thickness direction relative to the film thickness of the retaining film 200. Therefore, in step S6 (stripping process), the first part 201 can be stripped to a certain size, so that the particles 300 can be removed more appropriately.

[0173] Conversely, when the particle 300 on the main surface of the substrate W is smaller, the first target mixing ratio is lower, allowing the processing unit 1 to more easily form a thinner retaining film 200. Furthermore, according to this substrate processing method, the smaller the particle 300, the lower the second target mixing ratio. Therefore, when the retaining film 200 is thin, the processing unit 1 can suppress the excessive formation of the second portion 202, which is sufficiently long in the thickness direction relative to the thickness of the retaining film 200. Therefore, in step S6 (the peeling step), the first portion 201 can be peeled off to a certain size, allowing for more appropriate removal of the particle 300.

[0174] In other words, the second correspondence between the size of the particles 300 and the second target mixing ratio is set in advance so that the particles 300 are appropriately removed.

[0175] <Mixing section>

[0176] Figure 11 : is a diagram schematically showing another first example of the mixing unit 30. Figure 11 In the example of FIG. 3 , the mixing unit 30 includes a tank 38. The holding liquid is stored in the tank 38. Figure 11 As shown, the downstream portions of the first liquid supply pipe 33a, the second liquid supply pipe 33b, and the third liquid supply pipe 33c are connected to a tank 38. The first liquid, the second liquid, and the third liquid are supplied to the tank 38 through the first liquid supply pipe 33a, the second liquid supply pipe 33b, and the third liquid supply pipe 33c, respectively. The first liquid, the second liquid, and the third liquid are mixed inside the tank 38 and stored in the tank 38 as a holding liquid.

[0177] like Figure 11 As shown, the upstream end of the liquid supply pipe 32 is connected to, for example, the bottom of the tank 38. Figure 11 In the example shown, a supply valve 361 and a flow control valve 362 are installed in the liquid supply pipe 32. The supply valve 361 is controlled by the control unit 90 to switch the liquid supply pipe 32 open and closed. The flow control valve 362 is also controlled by the control unit 90 to adjust the flow rate of the holding liquid flowing through the liquid supply pipe 32. The flow control valve 362 can also be a mass flow controller.

[0178] The controller 90 controls the supply valves 34a, 34b, and 34c, and the flow rate control valves 35a, 35b, and 35c of the mixing unit 30 based on the first target mixing ratio. As a result, the tank 38 stores the holding liquid mixed at the first mixing ratio based on the first target mixing ratio.

[0179] like Figure 11As shown, a circulation unit 39 may also be provided in the tank 38. The circulation unit 39 includes a circulation pipe 391 and a pump 392. The upstream end of the circulation pipe 391 is connected to, for example, the bottom of the tank 38, and the downstream end of the circulation pipe 391 is connected to, for example, the top of the tank 38. The pump 392 is installed in the circulation pipe 391 and transports the retention liquid from the upstream end to the downstream end of the circulation pipe 391. As a result, the retention liquid in the tank 38 flows back into the tank 38 through the circulation pipe 391. Through this circulation, the retention liquid in the tank 38 is constantly flowing, so that the concentration distribution of the retention liquid in the tank 38 can be made more uniform.

[0180] Figure 12 This figure schematically illustrates another second example of the mixing section 30. The mixing section 30 includes a plurality of tanks 38. Retention liquids having different first mixing ratios are stored in the plurality of tanks 38. When the first target mixing ratio is set in a stepwise manner with respect to the parameters of the particles 300 in the first correspondence data D1, the first mixing ratio of the retention liquid stored in each tank 38 may be the same as each of the first target mixing ratios specified in the first correspondence data D1. In other words, retention liquids having first mixing ratios that are the same as or comparable to the plurality of first target mixing ratios specified in the first correspondence data may be stored in each of the plurality of tanks 38.

[0181] exist Figure 12 In the example, there are multiple Figure 11 The structure 301 shown. The holding liquid stored in each tank 38 can be supplied to the first nozzle 31 of the processing unit 1 through the corresponding liquid supply pipe 32. By opening the supply valve 361 installed in each liquid supply pipe 32, the holding liquid is supplied from each tank 38 to the first nozzle 31.

[0182] An example of a substrate processing method and Figure 4 However, in step S4 (liquid film forming step), the control unit 90 opens the supply valve 361 corresponding to the first target mixing ratio determined in step S3 (mixing ratio determining step). As a result, the holding liquid having the first mixing ratio corresponding to the first target mixing ratio is supplied from the tank 38 to the first nozzle 31 through the liquid supply pipe 32 and is ejected from the first nozzle 31 onto the main surface of the substrate W.

[0183] Alternatively, a plurality of retention liquids determined by a combination of a plurality of first target mixing ratios specified in the first correspondence data and a plurality of second target mixing ratios specified in the second correspondence data may be stored in a plurality of tanks 38. In this case, in step S4, the control unit 90 opens the supply valve 361 corresponding to the first target mixing ratio and the second target mixing ratio determined in step S3. Consequently, the retention liquid having the first mixing ratio corresponding to the first target mixing ratio and the second mixing ratio corresponding to the second target mixing ratio is supplied from the tank 38 to the first nozzle 31 through the liquid supply pipe 32 and is ejected from the first nozzle 31 onto the main surface of the substrate W.

[0184] <Timing of determining the target mixing ratio>

[0185] The control unit 90 may determine the first target mixture ratio (and the second target mixture ratio, and the same applies hereinafter) for each substrate W, but may also determine the first target mixture ratio in common for a plurality of substrates W.

[0186] For example, the substrate W is planarized in a process upstream of the substrate processing apparatus 100. If the same planarization apparatus is used to planarize a plurality of substrates W under the same processing conditions, the distribution of the particles 300 is uniform across the plurality of substrates W. For example, the same processing conditions can be used to planarize a plurality of substrates W within the same batch.

[0187] In this case, the sensor 6 may detect particles 300 only on the first substrate W loaded among the plurality of substrates W and measure parameters (e.g., size) of the particles 300. The control unit 90 determines a first target mixing ratio based on the measurement results of the sensor 6, and the processing unit 1 supplies a holding liquid having a first mixing ratio that is the same as or comparable to the first target mixing ratio to the first substrate W for cleaning. Subsequently, the processing unit 1 applies the first target mixing ratio used for the first substrate W to the second and subsequent substrates W, supplying a holding liquid having the first mixing ratio to the substrates W for cleaning.

[0188] Figure 13 This is a flowchart showing an example of the above-mentioned substrate processing method. Figure 13 Examples and Figure 4 Compare, and then execute step S20. Figure 13 In the example, step S20 is executed between step S1 and step S2.

[0189] In step S20, the control unit 90 determines whether the substrate W to be processed is the first substrate W of a specified batch. If multiple substrates W from the same batch are housed in the same carrier C, the control unit 90 determines whether the substrate W to be processed is the substrate W first removed from the carrier C. Alternatively, if substrate data specifying various information about the substrate W is transmitted to the control unit 90 from an upstream device, the control unit 90 may make this determination based on the substrate data. The substrate data may specify the batch number of the corresponding substrate W and the substrate number within the batch. The batch number is used to identify multiple batches, and the substrate number is used to identify multiple substrates W within the same batch.

[0190] If the substrate W to be processed is the first substrate W, the processing unit 1 performs steps S2 through S9. On the other hand, if the substrate W to be processed is the second or subsequent substrate W, the processing unit 1 does not perform step S2 (measurement step). The control unit 90 determines the first target mixing ratio determined for the first substrate W as the first target mixing ratio for the second or subsequent substrates W (step S3: mixing ratio determination step). Subsequently, the processing unit 1 performs steps S4 through S9.

[0191] As described above, the control unit 90 uses a common first target mixing ratio for a plurality of substrates W. Specifically, the sensor 6 detects particles 300 on one of the plurality of substrates W and measures the parameters of the particles 300. Based on the measurement results, the control unit 90 determines the first target mixing ratio for the plurality of substrates W. Specifically, the control unit 90 determines a common first target mixing ratio for the plurality of substrates W that have undergone planarization processing under the same processing conditions. Therefore, compared to determining the first target mixing ratio for each substrate W, the processing load on the control unit 90 can be reduced. Furthermore, step S2 for the second and subsequent substrates W can be omitted, thereby improving the throughput of the cleaning process for the plurality of substrates W.

[0192] Similarly, regarding the second target mixing ratio, the processing unit 1 can also determine a common second target mixing ratio for a plurality of substrates W.

[0193] When the control unit 90 determines a common first target mixing ratio for a plurality of substrates W, it is preferable to use the mixing unit 30. Figure 11 or Figure 12 According to the configuration shown, the holding liquid for a plurality of substrates W can be generated at once and stored in the tank 38. In other words, the capacity of the tank 38 is preferably set to be greater than the total amount of the holding liquid used for processing a plurality of substrates W.

[0194] <Parameters that serve as the basis for determining the target mixing ratio>

[0195] In the above example, the control unit 90 determines the first target mixing ratio based on the size of the particles 300 . However, the control unit 90 may also determine the first target mixing ratio based on the number of particles 300 .

[0196] The sensor 6 measures the number of particles 300 on the main surface of the substrate W. The control unit 90 may also be configured to determine a higher first target mixing ratio as the number of particles 300 measured by the sensor 6 increases. For example, the first correspondence between the number of particles 300 and the first target mixing ratio is: Figure 5 However, in this case, the horizontal axis represents the number of particles 300.

[0197] Thus, when the number of particles 300 on the main surface of the substrate W is large, the processing unit 1 can more easily form the thicker retention film 200 . Therefore, the processing unit 1 can remove the particles 300 more reliably.

[0198] In addition, the control unit 90 may also be configured to determine the second target mixing ratio to be higher as the number of particles 300 detected by the sensor 6 increases. For example, the second correspondence between the number of particles 300 and the second target mixing ratio is Figure 10 However, in this case, the horizontal axis represents the number of particles 300.

[0199] Updating Correspondence Data Based on Machine Learning

[0200] At least one of the first correspondence data D1 and the second correspondence data D2 may be updated by machine learning based on the processing results of the substrate W. As a specific example, the processing unit 1 updates both the first correspondence data D1 and the second correspondence data D2.

[0201] Figure 14 1 is a functional block diagram schematically showing an example of the electrical configuration of the substrate processing apparatus 100. Figure 14 In the example, the first correspondence data D1, the second correspondence data D2, and the learned model LM1 are stored in the storage unit 94. The control unit 90 updates the first correspondence data D1 and the second correspondence data D2 based on the learned model LM1 that uses processing information and processing results on the substrate W as input data.

[0202] The learned model LM1 is constructed by machine learning (training) using a plurality of previously acquired learning data. The machine learning algorithm used to construct the learned model LM1 is not particularly limited as long as it is supervised learning. For example, a decision tree, a nearest neighbor method, a simple Bayesian classifier, a support vector machine, or a neural network can be applied. Therefore, the learned model LM1 includes a decision tree, a nearest neighbor method, a simple Bayesian classifier, a support vector machine, or a neural network. The error back propagation method can also be used for machine learning.

[0203] A neural network, for example, includes an input layer, an intermediate layer (i.e., a hidden layer), and an output layer. The neural network can be a deep neural network, a recurrent neural network, or a convolutional neural network. Neural networks include deep learning.

[0204] The learning data includes, for example, a plurality of experimental results. Specifically, the learning data includes processing conditions and processing results when a plurality of substrates W are cleaned by changing the first mixing ratio and the second mixing ratio. Figure 15 This is a diagram schematically showing an example of learning data. Figure 15 In the example, the processing conditions include the size (maximum value) of the particles 300 on the main surface of the substrate W and the first and second mixing ratios of the holding liquid. In addition to these conditions, the processing conditions may also include various conditions such as the rotation speed of the substrate W.

[0205] The processing result includes information on whether the substrate W after the cleaning process is good or not. Figure 15 In the example, the processing result includes the removal rate of particles 300 on the substrate W after the cleaning process. The removal rate is an indicator that indicates the extent to which particles 300 have been removed by the cleaning process. The removal rate is calculated by detecting the particles 300 on the main surface of the substrate W after the cleaning process using the sensor 6. The removal rate is obtained by, for example, subtracting the number of particles 300 after the cleaning process from 1 and dividing it by the number of particles 300 before the cleaning process. Furthermore, the processing result (here, the removal rate) can be considered to be a value based on the number of particles 300 on the main surface of the substrate W after the cleaning process.

[0206] exist Figure 15 In the example, the removal rate is calculated for each size range of particles 300, and the quality of each size range is also displayed. Here, when the removal rate is above a predetermined allowable value, the treatment result is "good", and when the removal rate is below the predetermined allowable value, the treatment result is "poor".

[0207] Furthermore, the processing result may include only a single good / bad information for the substrate W. That is, if the removal rate in all size ranges is above the allowable value, the processing result of the substrate W may be "good", and if the removal rate in any size range does not reach the allowable value, the processing result of the substrate W may be "bad".

[0208] The processing unit 1 uses the sensor 6 to detect particles 300 on the substrate W after the cleaning process (i.e., after step S8). The control unit 90 calculates the removal rate based on the detection results before and after the cleaning process to determine whether the cleaning process is good or not. Then, the control unit 90 uses the size (maximum value) of the particle 300 before the cleaning process, the first target mixing ratio, the second target mixing ratio, and the information of the processing result as input data, and uses the learned model LM1 to calculate more appropriate values ​​of the first target mixing ratio and the second target mixing ratio for the size of the particle 300. The control unit 90 uses the calculated values ​​to update the first correspondence data D1 and the second correspondence data D2. Furthermore, the more appropriate values ​​of the first target mixing ratio and the second target mixing ratio mentioned here can be values ​​that increase the removal rate compared to the values ​​before the update.

[0209] As described above, the control unit 90 updates the first correspondence data D1 and the second correspondence data D2 by machine learning based on the processing results of the substrate W. Therefore, the control unit 90 can determine more appropriate first and second target mixing ratios for subsequent substrates W.

[0210] Furthermore, the update process based on machine learning can also be performed after the processing of a plurality of substrates W is completed. In other words, the update process does not need to be performed every time a substrate W is processed.

[0211] <Determination of target mixing ratio based on machine learning>

[0212] In the above example, the control unit 90 determines the first target mixture ratio based on the measurement results of the sensor 6 and the first correspondence data D1. However, this is not necessarily limited to this. The control unit 90 may also determine the first target mixture ratio (or, further, the second target mixture ratio) based on a learned model LM2 that uses the measurement results of the sensor 6 as input data.

[0213] Figure 16 1 is a functional block diagram schematically showing another example of the electrical configuration of the substrate processing apparatus 100. Figure 16 In the example of , the learned model LM2 is stored in the storage unit 94. The control unit 90 uses the measurement result of the sensor 6 as input data and determines the first target mixture ratio based on the learned model LM2. Such a learned model LM2 can also be based on, for example Figure 15 The learning shown is constructed using data.

[0214] An example of a substrate processing method and Figure 4 or Figure 13However, in step S3 (mixing ratio determination process), the control unit 90 uses the measurement result of the sensor 6 (for example, the maximum value of the size of the particle 300) as input data and determines the first target mixing ratio (or, further, the second target mixing ratio) based on the learned model LM2 stored in the storage unit 94.

[0215] As a result, the control unit 90 determines the first target mixture ratio through machine learning, and thus can determine a more appropriate first target mixture ratio. The same applies to the second target mixture ratio.

[0216] <Sensor Installation Location>

[0217] <Another Chamber>

[0218] In the above example, the various components for supplying the holding liquid, stripping liquid, and rinsing liquid to the substrate W are located within the same chamber 10 as the sensor 6. Specifically, the substrate holder 2, nozzle 3, and sensor 6 are located within the same chamber 10. However, this is not necessarily limited to the embodiment. The sensor 6 may also be located outside the chamber 10 housing the substrate holder 2 and nozzle 3. For example, the sensor 6 may be located in a processing unit 1 separate from the processing unit 1 containing the substrate holder 2 and nozzle 3.

[0219] Figure 17 1 is a diagram showing an example of the structure of the processing unit 1. Figure 17 In the example, processing unit 1A and processing unit 1B are shown as processing unit 1. Processing unit 1A includes a chamber 10 (hereinafter referred to as chamber 10A), a substrate holder 2 (equivalent to a second substrate holder, hereinafter referred to as substrate holder 2A), and a sensor 6.

[0220] The substrate holding unit 2A is provided in the chamber 10A and holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1.

[0221] The sensor 6 is provided in the chamber 10A. The sensor 6 detects particles on the main surface (here, the upper surface) of the substrate W held by the substrate holding portion 2A and measures the parameters of the particles. The sensor 6 outputs an electrical signal indicating the measurement result to the control portion 90. Figure 17 As shown, the processing unit 1A may also include a sensor movement driving unit 63 for moving the sensor 6 .

[0222] Furthermore, the chamber 10A may not include a nozzle. In other words, the processing unit 1A may be a dedicated unit for particle measurement.

[0223] The processing unit 1B includes a chamber 10 (hereinafter referred to as the chamber 10B), a substrate holding portion 2 (equivalent to the first substrate holding portion, hereinafter also referred to as the substrate holding portion 2B), and nozzles 3 (a first nozzle 31, a second nozzle 41, and a third nozzle 51). Figure 17 In the example, the processing unit 1B has Figure 3 The processing unit 1 is configured by removing the sensor 6 and the sensor moving drive unit 63.

[0224] The second transport unit 122 first transports an unprocessed substrate W to the processing unit 1A. The substrate holder 2A holds the transported substrate W. The sensor 6 then detects particles on the main surface of the substrate W held by the substrate holder 2A and measures parameters of the particles. The sensor 6 then outputs an electrical signal indicating its measurement result to the control unit 90.

[0225] Next, the second transport unit 122 removes the measured substrate W from the processing unit 1A and transports it to the processing unit 1B. The substrate holder 2B holds the loaded substrate W. The processing unit 1B then sequentially executes steps S3 through S9 to clean the substrate W. Furthermore, in step S3 (mixing ratio determination step), the control unit 90 determines a first target mixing ratio (or, alternatively, a second target mixing ratio) based on the particle parameters measured by the sensor 6 of the processing unit 1A.

[0226] According to this example, sensor 6 is located within chamber 10A, while components related to the cleaning process are located within chamber 10B. This reduces the likelihood that sensor 6 will be exposed to the process liquid environment (including volatile components or mist from the process liquid). Consequently, a sensor 6 with lower tolerance to process liquids can be used, resulting in a more affordable sensor 6.

[0227] <External devices>

[0228] The sensor 6 may also be disposed outside the substrate processing apparatus 100 . Figure 18 1 is a diagram schematically showing an example of the structure of the substrate processing system 1000. Figure 18 In the example, the substrate processing system 1000 includes a substrate processing apparatus 100 , a carrier transfer apparatus 400 , and a measuring apparatus 500 .

[0229] The substrate processing apparatus 100 and Figure 1 However, the sensor 6 may not be provided in each processing unit 1 .

[0230] The measuring device 500 is a device for measuring the particles 300 on the main surface of the substrate W. Figure 18In this example, the measurement apparatus 500 includes a load port 501, a transport unit 502, a measurement unit 503, and a control unit 504. The load port 501 is similar to the load port 111, and a carrier C containing a plurality of substrates W is placed on the load port 501. The transport unit 502 is a transport robot that transfers substrates W between the carrier C placed on the load port 501 and the measurement unit 503.

[0231] The measurement unit 503 includes a substrate holder 2C and a sensor 6. The substrate holder 2C holds the substrate W, which has been loaded by the transport unit 502, in a horizontal position. The substrate holder 2C can also rotate the substrate W about a rotation axis Q1. An example of the structure of the substrate holder 2C is the same as that of the substrate holder 2. The sensor 6 detects particles on the main surface of the substrate W held by the substrate holder 2C and measures parameters of the particles.

[0232] The control unit 504 controls the measurement device 500. Specifically, the control unit 504 controls the conveyor unit 502, the substrate holder 2C, and the sensor 6. The control unit 504 associates the particle parameters detected by the sensor 6 with the substrates W in the carrier C to generate measurement result data, and transmits this measurement result data to the control unit 90 via a communication unit (not shown).

[0233] The carrier transport apparatus 400 transports the carrier C to the measuring apparatus 500 , takes out the carrier C containing the plurality of substrates W measured by the measuring apparatus 500 from the measuring apparatus 500 , and transports the carrier C to the substrate processing apparatus 100 .

[0234] The control unit 90 determines a first target mixing ratio (or further a second target mixing ratio) for each substrate W in the carrier C based on the measurement result data received from the outside (the measuring device 500 ).

[0235] According to this embodiment, the sensor 6 is also disposed outside the cleaning chamber 10. Therefore, the possibility of the sensor 6 being exposed to the process liquid environment can be reduced. Consequently, a sensor 6 with lower tolerance to the process liquid can be used, thereby enabling the use of a more affordable sensor 6.

[0236] While the substrate processing apparatus 100 and the substrate processing method have been described in detail above, the above description is in all respects illustrative and the present invention is not limited thereto. Furthermore, the various variations described above may be combined and applied as long as they do not conflict with each other. Furthermore, it should be understood that numerous variations not illustrated are conceivable without departing from the scope of the present invention.

[0237] The first polymer may also contain a thermosetting resin. In this case, the first polymer is hardened by heating by the heating unit 8 in step S5. Alternatively, the first polymer may also contain a photocurable resin. In this case, the processing unit 1 includes a light source (not shown) for hardening the photocurable resin. In step S5, the processing unit 1 irradiates the liquid film of the retaining liquid with the light source. This causes the first polymer to harden.

[0238] In the above example, the nozzles 3 include a first nozzle 31 for the holding liquid, a second nozzle 41 for the stripping liquid, and a third nozzle 51 for the rinsing liquid. However, this is not necessarily limited to the above example. At least two of the three nozzles 3 may be shared by one nozzle 3.

[0239] [Description of Reference Numerals]

[0240] 10: Chamber

[0241] 100: Substrate processing equipment

[0242] 2, 2B: First substrate holding portion (substrate holding portion)

[0243] 2A: Second substrate holding portion (substrate holding portion)

[0244] 3: Nozzle

[0245] 30: Mixing section

[0246] 42: Liquid supply pipe

[0247] 6: Sensor

[0248] 90: Control Department

[0249] 94: Storage

[0250] D1: The first corresponding relationship data

[0251] LM1, LM2: learned models

[0252] S1: Maintaining process (step)

[0253] S3: Mixing ratio determination process (step)

[0254] S4: Liquid film forming process (step)

[0255] S5: Film-Maintaining Process (Step)

[0256] S6: Peeling process (step)

[0257] W: substrate

Claims

1. A substrate processing device, wherein: have: a first substrate holding portion for holding a substrate; at least one nozzle for spraying a processing liquid onto the main surface of the substrate held by the first substrate holding portion; a mixing unit for supplying a retention liquid obtained by mixing a polymer and an organic solvent to the at least one nozzle, and ejecting the retention liquid from the at least one nozzle toward the main surface of the substrate to form a liquid film of the retention liquid on the main surface of the substrate; a liquid supply pipe connected to the at least one nozzle, supplying a stripping liquid for stripping the retaining film formed by solidifying or hardening the liquid film of the retaining liquid to the at least one nozzle, and ejecting the stripping liquid from the at least one nozzle toward the main surface of the substrate; and The control unit determines a first target mixing ratio of the polymer in the retaining liquid to the organic solvent based on a parameter, and controls the mixing unit based on the first target mixing ratio, wherein the parameter is a size or a number of particles on the main surface of the substrate.

2. The substrate processing apparatus according to claim 1, wherein: It also has sensors, The sensor measures the parameter of the particles on the main surface of the substrate.

3. The substrate processing apparatus according to claim 2, wherein: With chamber, The chamber accommodates the first substrate holding portion, the at least one nozzle, and the sensor. The sensor measures the parameter of the particles on the main surface of the substrate held by the first substrate holding portion.

4. The substrate processing apparatus according to claim 2, wherein: have: a chamber accommodating the first substrate holding portion and the at least one nozzle; and a second substrate holding portion, disposed outside the chamber and holding the substrate; The sensor is provided outside the chamber and measures the parameter of the particles on the main surface of the substrate held by the second substrate holding portion.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The control unit determines the first target mixing ratio when the parameter is a first value to be larger than the first target mixing ratio when the parameter is a second value smaller than the first value.

6. The substrate processing apparatus according to claim 5, wherein: The above parameters are the size of the above particles, The control unit determines the first target mixing ratio based on a maximum size of the particles on the main surface of the substrate.

7. The substrate processing apparatus according to claim 6, wherein: A storage unit is provided. The storage unit stores first correspondence data indicating a correspondence between the parameters of the particles and the first target mixing ratio. The control unit determines the first target mixing ratio based on the parameters and the first correspondence data.

8. The substrate processing apparatus according to claim 7, wherein: The control unit updates the first correspondence data based on a learned model that takes as input the parameter, the first target mixing ratio, and a processing result based on the number of particles on the main surface of the substrate after the stripping liquid is supplied.

9. The substrate processing apparatus according to claim 6, wherein: The control unit determines the first target mixing ratio based on a learned model, wherein the learned model uses the parameters of the particles on the main surface of the substrate as input data.

10. The substrate processing apparatus according to claim 5, wherein: The holding liquid contains a first polymer and a second polymer that is more easily soluble in the stripping liquid than the first polymer. The control unit determines a second target mixing ratio of the second polymer to the first polymer when the parameter is the first value to be larger than the second target mixing ratio when the parameter is the second value.

11. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The control unit determines the first target mixing ratio in common for the plurality of substrates in the same lot that are sequentially carried in.

12. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The main surface of the substrate is planarized.

13. A substrate processing method, wherein: have: a holding step of holding the substrate having the planarized main surface; a mixing ratio determining step of determining a first target mixing ratio of the polymer to the organic solvent in a holding liquid, which is a mixed liquid of the polymer and the organic solvent, based on a parameter, wherein the parameter is a size or a number of particles on the main surface of the substrate; a liquid film forming step of supplying the retention liquid mixed at the first target mixing ratio to the main surface of the substrate to form a liquid film of the retention liquid on the main surface of the substrate; a retention film forming step of solidifying or curing the liquid film of the retention liquid on the main surface of the substrate to form a retention film on the main surface of the substrate; and In the peeling step, a peeling liquid for peeling the holding film is supplied to the main surface of the substrate.

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