Substrate processing method and substrate processing apparatus

Abstract

The invention provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: a substrate loading step of loading a substrate having a pattern formed on a front side and having a thin film formed on a back side into a processing space; and a stress relaxation step for relaxation of stress applied to the substrate, in which the stress relaxation step includes: a processing liquid supply step of supplying a processing liquid to the thin film; and a heating step of heating the back side of the substrate by emitting a laser light to the back side of the substrate, in which the heating step includes: a laser modulation step of forming a laser emission pattern based on a stress applied to each of the unit regions on the substrate by modulating the laser light using a digital micromirror device (DMD) unit; and a laser emission step of emitting the laser emission pattern modulated by the DMD unit to the back side of the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2024-0035942, filed on March 14, 2024, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a substrate processing method and a substrate processing apparatus, and more particularly, to a method and an apparatus for processing a substrate by emitting laser light. Background Art

[0004] In order to manufacture semiconductor devices, various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition are performed on a substrate (such as a wafer), and one or more layers are formed on the substrate through steps such as film formation using insulating or conductive materials, photolithography, etching, stripping, and cleaning.

[0005] When a series of processes of depositing and removing a film on a substrate are repeated, internal warpage is generated due to stress applied to the substrate due to factors such as the type and structure of the film or the heat applied to the substrate during the process. The generation of warpage in the substrate can cause overlay errors in processes such as photolithography, etching, and deposition performed on the substrate, leading to problems such as reduced substrate processing efficiency and lowered yield of semiconductor devices.

[0006] Therefore, various attempts have been made to reduce substrate warpage or alleviate stress applied to the substrate. However, related art techniques employ methods that obtain vector-type warpage maps of substrate errors in the x / y directions and correct for up / down (second-order) warpage using error sums. Consequently, these techniques have limitations in correcting asymmetric and non-uniform high-order stresses applied to the substrate.

[0007] Furthermore, even if warpage is corrected on a substrate scale, there is a problem that chip-level warpage is formed on the substrate, that is, chip-scale stress cannot be corrected or is difficult to correct. Summary of the Invention

[0008] An object of the present disclosure is to provide a substrate processing method and a substrate processing apparatus capable of efficiently processing a substrate.

[0009] Furthermore, an object of the present disclosure is to provide a substrate processing method and a substrate processing apparatus capable of effectively relaxing stress asymmetrically applied to a substrate.

[0010] Furthermore, an object of the present disclosure is to provide a substrate processing method and a substrate processing apparatus capable of effectively relaxing stress having a complex distribution by asymmetrically heating the substrate.

[0011] Furthermore, an object of the present disclosure is to provide a substrate processing method and a substrate processing apparatus that can effectively alleviate die-level or chip-level stress on a substrate.

[0012] An exemplary embodiment of the present disclosure is a substrate processing method, which includes: a substrate loading step in which a substrate having a pattern formed on a front side and a thin film formed on a back side is loaded into a processing space; and a stress relaxation step in which stress applied to the substrate is relaxed, wherein the stress relaxation step includes: a treatment liquid supplying step in which a treatment liquid is supplied to the thin film; and a heating step in which the back side of the substrate is heated by emitting laser light toward the back side of the substrate, wherein the heating step may include: a laser modulation step in which a laser emission pattern is formed based on the stress applied to each of the unit areas on the substrate by modulating the laser using a digital micro-mirror device (DMD) unit; and a laser emission step in which the laser emission pattern modulated by the DMD unit is emitted to the back side of the substrate.

[0013] According to an embodiment of the present disclosure, a DMD unit includes a micromirror provided to be rotatable; and a board substrate on which the micromirror is mounted.

[0014] According to an embodiment of the present disclosure, after the stress relaxation step, an additional process step is performed on the front side of the substrate, and after the additional process step, a thin film removal step of removing the thin film on the back side may be performed.

[0015] According to an embodiment of the present disclosure, the thin film may be a nitride film.

[0016] According to an embodiment of the present disclosure, the treatment liquid may be an aqueous phosphoric acid solution.

[0017] According to embodiments of the present disclosure, a thin film may be deposited on the back side of a substrate through a deposition process.

[0018] According to an embodiment of the present disclosure, the stress applied to each of the unit areas can be obtained by a stress map that maps stress data from shape data of the substrate surface, and the DMD unit forms an emission pattern based on the stress map in the laser modulation step.

[0019] According to an embodiment of the present disclosure, in the laser modulation step, thickness data of the thin film can be obtained based on the stress map, which is used to apply a reverse stress to the stress existing in a unit area of ​​the substrate, and an emission pattern is formed based on the thickness data of the thin film.

[0020] According to an embodiment of the present disclosure, in the substrate loading step, the substrate can be loaded into the processing space in a state where the back side faces upward.

[0021] An exemplary embodiment of the present disclosure is a substrate processing apparatus, comprising: a supporting unit on which a substrate is placed, the substrate having a pattern surface with a pattern formed thereon and a non-pattern surface with a thin film formed thereon; a processing liquid supply unit that supplies processing liquid to the thin film; and a laser emitting unit that emits laser light toward the thin film of the substrate, the substrate being supported on the supporting unit and supplied with processing liquid, wherein the laser emitting unit comprises: a laser source that generates laser light; and a digital micromirror device (DMD) unit that modulates the laser light generated by the laser source, wherein the DMD unit may comprise: a micromirror that is configured to be rotatable; and a plate substrate on which the micromirror is mounted.

[0022] According to an embodiment of the present disclosure, the apparatus may further include a control unit, wherein the control unit controls the DMD unit to form a laser emission pattern based on stress applied to each of the unit regions on the substrate.

[0023] According to an embodiment of the present disclosure, stress applied to each of the unit regions may be obtained by a stress map that maps stress data from shape data of a substrate surface, and the DMD unit forms an emission pattern based on the stress map.

[0024] According to an embodiment of the present disclosure, the laser emitting unit also includes an imaging unit, which adjusts the laser modulated by the DMD unit and emits the laser to the substrate to correspond to the area to which the laser is emitted, and the imaging unit may include multiple lenses that adjust the area and path of the modulated laser.

[0025] An exemplary embodiment of the present disclosure is a substrate processing method including: a substrate loading step in which a substrate having a pattern formed on a front side and a nitride film formed on a back side is loaded into a processing space; and a stress relaxation step in which stress applied to the substrate is relaxed, wherein the stress relaxation step may include: a treatment liquid supplying step in which a phosphoric acid aqueous solution is supplied to the nitride film; and a heating step in which the nitride film is heated by emitting a laser to the nitride film.

[0026] According to an embodiment of the present disclosure, the heating step includes: a laser modulation step in which a laser emission pattern is formed based on stress applied to each of unit regions on a substrate by modulating laser light using a digital micromirror device (DMD) unit; and a laser emission step in which the laser emission pattern modulated by the DMD unit is emitted to the nitride film, and the thickness of the nitride film can be variously adjusted in the unit regions by adjusting the amount of heating of the laser light in a stress alleviation step.

[0027] According to an embodiment of the present disclosure, thickness data of the nitride film is obtained to apply a reaction force to stress existing in each of the unit regions of the substrate, and a laser emission pattern can be formed based on the thickness data of the nitride film in the stress relaxation step.

[0028] According to an embodiment of the present disclosure, an additional process is performed on the front side of the substrate after the stress relaxation step, and the substrate processing method may further include a thin film removal step of removing the nitride film after the additional process.

[0029] According to an embodiment of the present disclosure, a nitride film may be deposited on the back side of a substrate through a deposition process.

[0030] According to an embodiment of the present disclosure, the apparatus may further include a stress map that maps stress data from the shape data of the substrate surface before the stress relaxation step.

[0031] According to an embodiment of the present disclosure, the DMD unit includes: a micromirror, which is configured to be rotatable; and a plate-type substrate, on which the micromirrors are mounted, and in a laser modulation step, adjusts the direction in which each micromirror reflects the laser light, and can modulate the laser light by selectively switching between an on state for reflecting the laser light toward the substrate and an off state for dumping the laser light.

[0032] The objects of the present disclosure are not limited thereto, and other objects not mentioned will be clearly understood from the following description by those of ordinary skill in the art.

[0033] According to the exemplary embodiments of the present disclosure, a substrate can be efficiently processed.

[0034] Further, according to the embodiments of the present disclosure, stress asymmetrically applied to the substrate can be effectively relaxed.

[0035] Further, according to the embodiments of the present disclosure, stress having a complex distribution can be effectively relaxed by asymmetrically heating the substrate.

[0036] Furthermore, according to the embodiments of the present disclosure, die-level or chip-level stress on a substrate can be effectively alleviated.

[0037] Effects of the presently disclosed concept are not limited to the above-mentioned effects, and those skilled in the art can clearly understand unmentioned effects from the present description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the present disclosure.

[0039] Figure 2 It is schematically shown Figure 1 Figure 2 is a diagram of an embodiment of a liquid processing chamber.

[0040] Figure 3 It is schematically shown Figure 2 Diagram of the configuration of the laser emission module.

[0041] Figure 4 is a diagram showing the distribution of a laser beam output from a laser source, and Figure 5 is a diagram showing the distribution of the laser beam passing through the beam shaper.

[0042] Figure 6 is a diagram schematically showing the appearance of an optical modulator.

[0043] Figure 7 is a diagram showing a laser beam output from an optical modulator.

[0044] Figure 8 is a diagram showing that a laser beam output from an optical modulator is removed at an optical dumper.

[0045] Figure 9 is a diagram showing the principle of removing a laser beam at an optical dump.

[0046] Figure 10is a diagram showing an emission pattern of a laser beam output from an optical modulator.

[0047] Figure 11 is a flow chart of a substrate processing apparatus according to an embodiment of the present disclosure.

[0048] Figure 12 It shows that in the execution Figure 11 FIG. 4 shows the appearance of the liquid processing chamber during the substrate loading step.

[0049] Figure 13 It shows that in the execution Figure 11 FIG. 4 is a diagram showing the appearance of a liquid processing chamber during a chemical solution supply step.

[0050] Figure 14 Shows that in the implementation Figure 11 Figure 2 shows the appearance of the liquid processing chamber during the heating step.

[0051] Figure 15 is a diagram showing stress applied to a substrate having no thin film formed on the back side.

[0052] Figure 16 It shows that in the execution Figure 11 Graph of the stress applied to a substrate supported on a support unit before the heating step shown in FIG.

[0053] Figure 17 It shows that in the execution Figure 11 Graph of the stress applied to a substrate supported on a support unit after the heating step shown in .

[0054] Figure 18 is a diagram showing the appearance of a liquid processing chamber when a flushing liquid supplying step according to an embodiment is performed.

[0055] Figure 19 is a diagram illustrating a substrate after additional processes and thin film removal steps are performed.

[0056] The various features and advantages of the non-limiting exemplary embodiments of the present disclosure may become apparent by reviewing the detailed description in conjunction with the accompanying drawings. The accompanying drawings are for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless expressly noted, the drawings are not to be considered drawn to scale. Various dimensions in the drawings may be exaggerated for clarity. DETAILED DESCRIPTION

[0057] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments are provided so that this disclosure is thorough and the scope is fully conveyed to those skilled in the art. Many specific details (such as, embodiments of specific parts, equipment and methods) are set forth to provide a thorough understanding of the embodiments of the present disclosure. It will be apparent to those skilled in the art that it is not necessary to adopt specific details, and example embodiments can be embodied in many different forms, and specific details should not be construed as limiting the scope of this disclosure. In some example embodiments, known processes, known device structures and known technologies are not described in detail.

[0058] The terms used herein are for the purpose of describing specific example embodiments only and are not intended to be restrictive. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" may be intended to include plural forms. The terms "comprises, comprising", "including" and "having" are inclusive and therefore refer specifically to the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or combinations thereof. Unless explicitly identified as an order of execution, the method steps, processes and operations described herein should not be interpreted as having to be performed in the specific order discussed or illustrated. It should also be understood that additional or alternative steps may be adopted.

[0059] When an element or layer is referred to as being "on," "engaged to," "connected to," or "coupled to," the element or layer may be directly on, directly engaged to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on," "directly engaged to," "directly connected to," or "directly coupled to the other element or layer," there may be no intervening elements or layers. Other words used to describe the relationship between elements should be interpreted similarly (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0060] Although the terms "first", "second", "third" etc. can be used to describe different elements, components, regions, layers and / or sections in this article, unless otherwise stated, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish one element, component, region, layer and / or section from another region, layer and / or section. When used in this article, unless the context clearly indicates, terms such as "first", "second" and other numerical items do not imply a sequence or order. Therefore, without departing from the teachings of the example embodiments, the first element, first component, first area, first layer or first section discussed below can be referred to as the second element, second component, second area, second layer or second section.

[0061] For ease of description, spatially relative terms (such as "inside," "outside," "below," "beneath," "below," "above," and "above," etc.) may be used herein to describe the relationship of one element or feature to another (or other) element or feature shown in the drawings. Spatially relative terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. For example, if the device in the figure is turned over, an element described as being "below" or "beneath" other elements or features would subsequently be oriented as being "above" the other elements or features. Thus, the example term "below" can encompass both above and below orientations. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0062] When the terms "same" or "identical" are used in the description of the exemplary embodiments, it should be understood that some imprecision may exist. Thus, when an element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0063] When the terms "about" or "substantially" are used with a numerical value, it should be understood that the associated numerical value includes a manufacturing or operating tolerance (e.g., ±10%) around the numerical value. In addition, when the words "generally" and "substantially" are used in connection with geometric shapes, it should be understood that the accuracy of the geometric shape is not required, but latitude of shape is within the scope of the present disclosure.

[0064] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments belong. It should also be understood that terms (including those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0065] In the following, reference will be made to Figures 1 to 19 Embodiments of the present disclosure are described in detail.

[0066] Figure 1 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the present disclosure.

[0067] Reference again Figure 1 The substrate processing apparatus includes an index module 10, a processing module 20, and a control unit 30. When viewed from above, the index module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are arranged is referred to as a first direction X, a direction perpendicular to the first direction X when viewed from above is referred to as a second direction Y, and a direction perpendicular to both the first direction X and the second direction Y is referred to as a third direction Z.

[0068] The index module 10 transfers substrates W from a container CR containing substrates W to the processing module 20 and loads the substrates W processed in the processing module 20 into the container CR. The longitudinal direction of the index module 10 is arranged in the second direction Y. The index module 10 has a load port 12 and an index frame 14. The load port 12 is positioned on the opposite side of the processing module 20, and the index frame 14 is located between the load port and the processing module. The container CR containing the substrates W is placed in the load port 12. A plurality of load ports 12 may be provided, and the plurality of load ports 12 may be arranged in the second direction.

[0069] The container CR may be a sealed container such as a front open unified pod (FOUP) and may be placed in the load port 12 by a worker or a transport device (not shown) such as an overhead conveyor, an overhead conveyor, or an automated guided vehicle.

[0070] The index robot 120 is provided in the index frame 14. A guide rail 124 having a longitudinal direction extending in the second direction Y is provided in the index frame 14, and the index robot 120 may be provided to be movable on the guide rail 124. The index robot 120 includes a hand 122 on which the substrate W is placed, and the hand 122 may be provided to be movable forward and backward, rotate about the third direction Z, and move in the third direction Z. A plurality of hands 122 are provided spaced apart from each other in the vertical direction, and the hands 122 may be movable forward and backward independently of each other.

[0071] The control unit 30 can control the components of the substrate processing device. The control unit 30 may include: a process controller, which is a microprocessor (computer) that performs control of the operation of the substrate processing device; a user interface, which is a keyboard through which the operator performs command input operations, etc. to manage the substrate processing device; a display that visualizes and displays the operation status of the substrate processing device, etc.; and a memory that stores a control program for performing processing performed in the substrate processing device under the control of the process controller, and a program for performing processing on each component according to various data and processing conditions (i.e., a processing plan). In addition, the user interface and the memory can be connected to the process controller. The processing plan can be stored in a storage medium of the storage unit, and the storage medium can be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as a flash memory).

[0072] The control unit 30 may control the substrate processing apparatus to perform the substrate processing method described below. For example, the control unit 30 may control components disposed in the liquid processing chamber 400 to perform the substrate processing method described below.

[0073] The processing module 20 includes a buffer unit 200, a transfer chamber 300, and a liquid processing chamber 400. The buffer unit 200 provides a space for substrates W loaded into or unloaded from the processing module 20 to temporarily reside. The liquid processing chamber 400 supplies liquid onto the substrates W to perform a liquid processing process for performing liquid processing on the substrates W. The transfer chamber 300 transfers the substrates W between the buffer unit 200 and the liquid processing chamber 400.

[0074] The longitudinal direction of the transfer chamber 300 may be arranged in the first direction X. The buffer unit 200 may be arranged between the index module 10 and the transfer chamber 300. The liquid processing chamber 400 may be arranged at a side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 may be arranged in the second direction Y. The buffer unit 200 may be positioned at an end of the transfer chamber 300.

[0075] According to an example, the liquid processing chambers 400 may be provided at both sides of the transfer chamber 300. The liquid processing chambers 400 may be provided at the sides of the transfer chamber 300 in an array of A×B (A and B are both natural numbers of 1 or greater) in the first direction X and the third direction Z, respectively.

[0076] The transfer chamber 300 includes a transfer robot 320. A guide rail 324, whose longitudinal direction is arranged in a first direction X, is provided in the transfer chamber 300, and the transfer robot 320 can be arranged to be movable on the guide rail 324. The transfer robot 320 includes a hand 322 on which a substrate W is placed, and the hand 322 can be arranged to be able to move forward and backward, rotate about a third direction Z, and move in the third direction Z. A plurality of hands 322 are arranged spaced apart from each other in the vertical direction, and the hands 322 can move forward and backward independently of each other.

[0077] The buffer unit 200 has a plurality of buffer zones 220, on which substrates W are placed. The buffer zones 220 can be spaced apart from each other in the third direction Z. The buffer unit 200 is open at the front and rear. The front faces the index module 10, and the rear faces the transfer robot 300. The index robot 120 can enter the buffer unit 200 through the front, and the transfer robot 320 can enter the buffer unit 200 through the rear.

[0078] Hereinafter, the substrate W processed in the liquid processing chamber 400 will be described in detail.

[0079] The processing target processed in liquid processing chamber 400 may be a wafer, glass, a photomask, or the like. One or more layers may be formed on substrate W through a predetermined process. A predetermined pattern may be formed on the front side or back side of substrate W. An active region may be included on the front side or back side of substrate W. The following description uses as an example a case where the substrate W processed in liquid processing chamber 400 is a wafer having one or more patterns formed on the front side.

[0080] Hereinafter, a substrate processing apparatus provided at the liquid processing chamber 400 will be described in detail. The liquid processing chamber 400 performs a predetermined process on the substrate W. More specifically, the process performed in the liquid processing chamber 400 may include a process of etching a thin film on the substrate and a process of cleaning, rinsing, and drying the substrate.

[0081] The substrate W loaded into the liquid processing chamber 400 may need to have a tin film formed on the front side or back side etched. That is, in the liquid processing chamber 400, one or more thin films formed on the substrate W may be etched. Furthermore, the substrate W processed in the liquid processing chamber 400 may be a post-processed substrate W. In an embodiment, the substrate W processed in the liquid processing chamber 400 may be a substrate on which a partial TSV process or a full TSV process has already been completed on the front side.

[0082] Figure 2 It is schematically shown Figure 1 Referring again to FIG. Figure 2 , the liquid processing chamber 400 includes a support unit 420, a bowl 430, a chemical solution supply unit 440, and a laser emitting assembly 500. Although not shown, the liquid processing chamber 400 may further include a housing surrounding the support unit 420, the bowl 430, the chemical solution supply unit 440, and the laser emitting assembly 500, and having an inlet / outlet port (not shown) through which the substrate W may be loaded and unloaded.

[0083] The support unit 420 may support the substrate M in a processing space 431 defined by a bowl 430 described below. The support unit 420 may support the substrate W. The support unit 420 may rotate the substrate W.

[0084] The support unit 420 may include a chuck 422, a support shaft 424, an actuating member 425, and a support pin 426 and a chuck pin 428. The support pin 426 and the chuck pin 428 may be mounted on the chuck 422. The chuck 422 may have a plate shape with a predetermined thickness. The support shaft 424 may be coupled to the lower portion of the chuck 422. The support shaft 424 may be a hollow shaft. Furthermore, the support shaft 424 may be rotated by the actuating member 425. The actuating member 425 may be a hollow motor. When the actuating member 425 rotates the support shaft 424, the chuck 422 coupled to the support shaft 424 may rotate. The substrate W placed on the support pin 426 mounted on the chuck 422 may be rotated by the rotation of the chuck 422.

[0085] The support pins 426 can support the substrate W. When viewed from above, the support pins 426 can have a substantially circular shape. In addition, when viewed from above, the support pins 426 can have a downwardly concave shape at the portion corresponding to the corner area of ​​the substrate W. That is, the support rod 426 can include a first surface supporting the lower portion of the corner area of ​​the substrate W and a second surface facing the side of the corner area of ​​the substrate W, so as to limit the lateral movement of the substrate W when the substrate W rotates. At least one or more support pins 426 can be provided. A plurality of support pins 426 can be provided. The number of support pins 426 can be set to correspond to the number of corner areas of the substrate W having a rectangular shape. The support pins 426 can space the bottom surface of the substrate W and the top surface of the chuck 422 apart by supporting the substrate W.

[0086] A plurality of support pins 426 are provided. The support pins 426 are arranged at predetermined intervals at the edge of the upper surface of the chuck 422 and protrude upward from the chuck 422. The support pins 426 are arranged in a manner such that they have a complete annular shape. The support pins 426 support the edge of the back side of the substrate W so that the substrate W is spaced a predetermined distance from the upper surface of the chuck 426.

[0087] A plurality of chuck pins 428 are provided. The chuck pins 428 are provided farther from the center of the chuck 422 than the support pins 426. The chuck pins 428 are provided so as to protrude upward from the chuck 422. When the support unit 420 rotates, the chuck pins 428 support the side of the substrate W to prevent the substrate W from being laterally separated from this position. The chuck pins 428 are provided so as to be movable in the radial direction of the chuck 422 from a standby position and a support position. The standby position is a position farther from the center of the chuck 422 than the support position. When the substrate W is loaded onto or unloaded from the chuck 422, the chuck pins 428 are positioned at the standby position, and when a process is performed on the substrate W, the chuck pins 428 are positioned at the support position. The chuck pins 428 contact the side of the substrate W at the support position.

[0088] The bowl 430 may have a cylindrical shape with an open top. The bowl 430 may define a processing space 431. The substrate W may be liquid-processed and heated in the processing space 431. The bowl 430 may prevent the processing liquid supplied to the substrate W from being splashed and transferred to the chemical solution supply unit 440 and the laser emitting assembly 500.

[0089] The bowl-shaped member 430 may include a bottom portion 433, a vertical portion 434, and an inclined portion 435. When viewed from above, an opening into which the support shaft 424 can be inserted may be formed through the bottom portion 433. The vertical portion 434 may extend from the bottom portion 433 in the third direction Z. The inclined portion 435 may extend upward at a certain angle from the vertical portion 434. For example, the inclined portion 435 may extend at a certain angle toward the substrate W supported on the support unit 420. A drain hole 432 may be formed through the bottom portion 433, which may drain the processing liquid supplied from the chemical solution supply unit 440 to the outside.

[0090] Furthermore, the bowl 430 is coupled to a lifting member (not shown) so that its position can be changed in the third direction Z. The lifting member may be an actuating device that moves the bowl 430 up and down. When performing liquid processing and / or heating processing on the substrate W, the lifting member may move the bowl 430 upward, and when loading or unloading the substrate W into or from the liquid processing chamber 400, the lifting member may move the bowl 430 downward.

[0091] The chemical solution supply unit 440 can supply a chemical solution for performing liquid processing on the substrate W. The chemical solution supply unit 440 can supply the chemical solution to the substrate W supported on the support unit 420. The chemical solution can be an etching solution or a rinsing liquid. The etching solution can be a chemical. The etching solution can be at least any one selected from the following group: hydrofluoric acid (HF) solution, sulfuric acid (H2SO4) solution, nitric acid (HNO3) solution, phosphoric acid (H3PO4) solution, SC-1 solution (a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and water (H2O)). When the film f described above is silicon nitride (SiN4), the etching solution can be, for example, a phosphoric acid aqueous solution (H3PO4+H2O), but is not limited thereto. The etching solution can etch the thin film formed on the substrate W. The etching solution can be called an etchant. The rinsing liquid can clean the substrate W. A well-known chemical solution can be provided as the rinsing liquid.

[0092] The chemical solution supply unit 440 may include a nozzle 441 , a fixing body 442 , a rotating shaft 443 , and a rotating member 444 .

[0093] The nozzle 411 may supply the processing liquid to the substrate W supported by the support unit 420. A first end of the nozzle 441 may be connected to the fixing body 442, and a second end thereof may extend from the fixing body 442 toward the substrate W. The nozzle 411 may extend from the fixing body 442 in the first direction X. Further, the second end of the nozzle 411 may extend at a certain angle toward the substrate W supported on the support unit 420.

[0094] If necessary, a plurality of nozzles 441 may be provided. Any one of the nozzles 441 may be a nozzle that discharges the above-mentioned etching solution, and another one of the nozzles 441 may be a nozzle that discharges the above-mentioned rinsing liquid.

[0095] The fixed body 442 can fix and support the nozzle 441. The fixed body 442 can be connected to a rotating shaft 443, which can be rotated about a third direction Z via a rotating member 444. When the rotating member 444 rotates the rotating shaft 443, the fixed body 442 can rotate about the third direction Z. Therefore, the outlet of the nozzle 441 can move between a liquid supply position, in which the processing liquid is supplied to the substrate W, and a standby position, in which the processing liquid is not supplied to the substrate W.

[0096] The laser emitting assembly 500 can emit laser light toward the substrate W. The laser emitting assembly 500 can adjust the line width of a pattern formed on the substrate W, which has a pattern formed on the top surface by the chemical solution (e.g., etching solution) supplied by the chemical solution supply unit 440, by emitting laser light toward the substrate W. The temperature of the area of ​​the substrate W to which the laser light emitted by the laser emitting assembly 500 is emitted can be increased. Therefore, the area emitted with the laser light can be etched relatively more, and the area not emitted with the laser light can be etched relatively less. In this way, the line width of the pattern formed on the substrate W can be adjusted.

[0097] The laser emitting assembly 500 includes a laser source 410 , a laser transmission member 520 and a laser emitting unit 600 .

[0098] The laser source 510 can generate light. The laser source 510 can generate light with straightness. The light generated by the laser source 510 can be emitted to the substrate W and can heat the substrate W. The light can be a laser beam, a fiber laser (fiber laser) or a laser diode, etc. In the following, the light exemplarily described is laser L. The power of the laser L can be adjusted according to the process requirements. The laser source 510 can have a power of 20W / unit area (unit area) (cm 2 ) in the range of 20W / unit area (cm 2 ), the optical modulator 642 described below can be properly driven without being damaged.

[0099] The laser transmission member 520 transmits the laser light L generated by the laser source 510 to the laser emitting unit 600. According to an example, the laser transmission member 520 may be an optical fiber.

[0100] Figure 3 It is schematically shown Figure 2 Diagram of the configuration of the laser emission module.

[0101] The laser emission module 600 includes a reflective mirror 610 , a beam shaper 620 , a prism optical device 630 , an optical modulation unit 640 , and an imaging unit 650 .

[0102] The reflective mirror 610 reflects the laser light L that passes through the laser transmission member 520 and enters the laser emitting module 600 and transmits the reflected light to the beam shaper 620. The reflective mirror 610 may include a plurality of reflective mirrors to appropriately reflect the path of the laser light L. For example, the reflective mirror 610 may include a first reflective mirror 612 and a second reflective mirror 614.

[0103] The beam shaper 620 may change the type of light output from the laser source 510 .

[0104] Figure 4 is a diagram showing the distribution of a laser beam output from a laser source, and Figure 5 is a diagram showing the distribution of the laser beam passing through the beam shaper.

[0105] Reference again Figures 3 to 5 , the laser light L outputted from the laser source 510 (such as Figure 6 ) may have a Gaussian type, wherein the intensity distribution has a Gaussian distribution. In more detail, the intensity of the laser light L output from the laser source 510 may be high at the center of the laser light L, and its intensity (intensity) may gradually decrease as it moves away from the center of the laser light L (see Figure 5 ). Therefore, when the laser light L output from the laser light source 510 is emitted to the substrate W, the area near the center of the laser light L may be heated more, and the area near the edge of the laser light L may be heated less. Therefore, in the laser emission module 600 according to the embodiment of the present disclosure, the beam shaper 620 may be provided on the travel path of the laser light L output from the laser light source 510. The beam shaper 620 may change the Gaussian laser light L output from the laser light source 510 into a flat-top type laser light L. The laser light L output from the laser light source 510 may be converted into a flat-top type having a flat-top distribution by the beam shaper 620, in which the intensity (brightness) distribution is relatively uniform.

[0106] Reference again Figure 3 , the laser light L having passed through the beam shaper 620 may be transmitted to the prism optical device 630 .

[0107] The prism optical device 630 may reflect the laser light L that has passed through the beam shaper 620 back to the optical modulation unit 640. The laser light L transmitted to the optical modulation unit 640 may be modulated at the optical modulation unit 620 and then output. The laser light L modulated and output from the optical modulation unit 640 may be transmitted to the imaging unit 650 through the prism optical device 630.

[0108] The optical modulation unit 640 may modulate the transmitted laser light L. The optical modulation unit 640 may include an optical modulator 642 , an optical dump 644 , and a cooling device 646 .

[0109] The optical modulator 642 may modulate the shape and distribution of the laser light L generated by the laser light source 510. In this case, the modulation of the shape and distribution of the laser light L may form a shape and distribution of the laser light L corresponding to an emission pattern of the laser light L to be emitted to the substrate W.

[0110] The optical modulator 642 may be a digital micro-mirror device (DMD).

[0111] That is, the optical modulation unit 640 may be a digital micromirror device (DMD) unit including a DMD.

[0112] Figure 6 is a diagram schematically showing the appearance of an optical modulator. The optical modulator 642 may include a plate substrate SB and a plurality of micromirrors MI. Electrodes corresponding to the plurality of micromirrors MI may be mounted on the plate substrate SB. The control unit 30 may transmit a digital signal "0" or "1" to the electrodes mounted on the plate substrate SB. The micromirrors MI may be configured to be rotatable. The micromirrors MI may be configured to be rotatable about a direction parallel to a plane passing through a first direction X, a second direction Y, or the first direction X and the second direction Y. The micromirror MI corresponding to the electrode receiving the digital signal "0" may be turned off, and the micromirror MI corresponding to the electrode receiving the digital signal "1" may be turned on. The micromirror MI in the on state may emit laser light L toward the substrate W, and may not emit laser light L reflected by the micromirror MI in the off state toward the substrate W.

[0113] Figure 7 is a diagram showing the output of a laser beam from an optical modulator. Figure 7 In FIG. 1 , for convenience of description, the travel path of light reflected by any one of the micromirrors MI is shown. Figure 3 、 Figure 6 as well as Figure 7 , the micromirror MI in the on state may transmit light to the substrate W through the imaging unit 650 described below.

[0114] Figure 8 is a diagram showing that the laser beam output from the optical modulator is removed at the optical dump. Figure 8 , for ease of description, the travel path of the laser light L reflected by any one of the micromirrors MI is shown. Figure 3 、 Figure 6 as well as Figure 8 , the micromirror MI in the off state can transmit the laser light L to the substrate W without reflecting the laser light L. Specifically, as described above, the micromirror MI is configured to be rotatable. The micromirror MI in the off state can change the travel path of the laser light L received from the laser source 510 by rotating, thereby preventing the light from being transmitted to the substrate W. The light L emitted from the micromirror MI in the off state can be extinguished by being emitted to the inner surface of the optical dump 644 without passing through the second hole 644b of the optical dump 644 (described below). In other words, the micromirror in the off state can dump the laser light L.

[0115] Figure 9 is a diagram showing the principle of removing the laser beam at the optical dump. Figure 3 as well as Figure 9 The optical dump 644 may have a box shape with an internal space. The optical dump 644 may be made of a material capable of removing laser light by absorbing the laser light, such as a synthetic resin. The prism optical device 630 may be disposed in the internal space of the optical dump 644. The optical modulator 642 may be disposed in the internal space of the optical dump 644, or may be mounted outside the optical dump 644.

[0116] A first hole 644a and a second hole 644b may be formed at the optical dump 644. The first hole 644a may be formed on a side of the optical dump 644. The first hole 644a may be a hole through which the laser light L generated by the laser source 510 and converted by the beam shaper 620 passes. The second hole 644b may be a hole through which the laser light L modulated by the optical modulator 642 passes. The second hole 644b may be formed on a lower portion of the optical dump 644.

[0117] A groove G may be formed on the inner surface 644c of the optical dump 644. The groove G formed on the inner surface 644c of the optical dump 644 may be configured to absorb light reflected by the micromirror MI in an off state. Specifically, when the laser light L is transmitted to the groove G, the laser light L may be removed by being reflected multiple times at the groove G. In the case where the laser light L is reflected multiple times at the groove G and energy is lost to the optical dump 644, the laser light may be removed. Figure 4 and Figure 10, it is exemplarily shown that the groove G is formed only on the lower portion of the optical dump 644 , but the present disclosure is not limited thereto, and the groove G may be formed on the entire inner surface 644 c of the optical dump 644 .

[0118] Reference again Figure 3 Since the optical dump 644 removes the laser light L, the temperature of the optical dump 644 may be increased. Therefore, the optical modulation unit 640 according to an embodiment of the present disclosure may include a cooling device 646 for cooling the optical dump 644. The cooling device 646 may be a fan that generates an airflow for cooling the optical dump 644.

[0119] The imaging unit 650 can emit the laser light L modulated and output from the optical modulation unit 640 and having passed through the prism optical device 530 to the substrate W by adjusting the laser light L to correspond to the area to which the laser light L is emitted. The imaging unit 650 includes a plurality of lenses capable of adjusting the size of the laser light L and capable of adjusting the profile of the laser light emitted to the substrate W by increasing or decreasing the diameter of the laser light L.

[0120] The imaging unit 650 may include a component that removes a noise pattern from the refraction pattern output from the optical modulation unit 640. For example, the imaging unit 650 may include a spatial filter.

[0121] The imaging unit 650 includes an emission lens 652. The laser light L modulated and output from the optical modulation unit 640 and having passed through the prism optical device 530 is adjusted by the imaging unit 650 and emitted to the substrate W through the emission lens 652.

[0122] As described above, the laser light L modulated by the optical modulation unit 640 and adjusted by the imaging unit 650 is emitted to the substrate W. The laser light emitting unit 600 may heat the unit area UA of the substrate W by emitting the laser light L thereto.

[0123] The laser emitting assembly 500 may further include a moving unit (not shown) that may move between a standby position and a position for emitting the laser light L to the substrate W supported on the supporting unit 420 .

[0124] Figure 10 is a diagram showing an emission pattern of a laser beam output from an optical modulator. Figure 3 、 Figure 6 as well as Figure 10As described above, the micromirrors MI can be switched between an on state and an off state. By adjusting the reflection direction of the laser light L, each of the micromirrors MI can selectively switch between an on state in which the laser light L is reflected toward the substrate W and an off state in which the laser light L is dumped. Each of the micromirrors MI can adjust the time during which the laser light L is emitted toward the substrate W by adjusting the time during which the micromirrors MI remain in the on state and the off state.

[0125] The state change of each micromirror MI between the on state and the off state can be performed in a very short time. Through the on-off state change of each micromirror MI, the optical modulation unit 640 can form very diverse emission patterns HP.

[0126] For example, in Figure 10 , the amount of heat (amount of heat) transmitted to the substrate W per unit time (e.g., 1 second) by the laser light L reflected by each micro mirror MI is shown. The emission pattern HP may be composed of a plurality of patterns P corresponding to the micro mirrors MI, respectively. In order to increase the amount of heat transmitted from each micro mirror MI to the substrate W per unit time, the micro mirror MI may be kept on for a long time and off for a short time. In order to reduce the amount of heat transmitted from each micro mirror MI to the substrate W per unit time, the micro mirror MI may be kept on for a short time and off for a long time.

[0127] Furthermore, the optical modulation unit 640 can change the shape or distribution of the laser light L individually or simultaneously by adjusting the on / off state of the micromirrors MI.

[0128] The laser emitting unit 600 including the optical modulation unit 640 can determine the emission pattern of the laser light L by adjusting the on / off state of each micromirror MI, and can determine the size of the emission area through the imaging unit 650, and then emit the laser light. The above-mentioned unit area UA can refer to the area where the laser light L corresponding to one micromirror MI is emitted to the substrate W through the imaging unit 650.

[0129] Further, the laser emitting module 600 including the optical modulation unit 640 may convert the laser light L converted into the flat top shape by the beam shaper 620 into a rectangular uniform laser light L by adjusting the on / off state of each micromirror MI and using the imaging unit 650 .

[0130] Furthermore, the optical modulation unit 640 can change the shape or distribution of the laser light L individually or simultaneously by adjusting the on / off state of the micromirrors MI.

[0131] In the following, reference will be made to Figures 11 to 19The substrate processing method according to the embodiment of the present disclosure is described. The substrate processing method to be described below is performed by the above-mentioned substrate processing apparatus, so the following also refers to Figures 1 to 10 Reference numerals in the accompanying drawings.

[0132] The substrate processing method described below can be performed by liquid processing chamber 400. Furthermore, control unit 30 can control components of liquid processing chamber 400 so that liquid processing chamber 400 can perform the substrate processing method described below. For example, controller 30 can generate a control signal for controlling at least one of support unit 420, lifting member 436, liquid supply unit 440, and laser emitting assembly 500 so that liquid processing chamber 400 can perform the substrate processing method described below.

[0133] Figure 11 Schematically shows a flow chart of a substrate processing apparatus according to an embodiment of the present disclosure. Figure 11 The substrate processing apparatus according to the embodiment of the present disclosure may include a substrate loading step S100 and a stress relaxation step S200. The stress relaxation step S200 may include a chemical solution supplying step S220, a heating step S240, and a rinse liquid supplying step S260, and the heating step S240 may include a laser modulation step S242 and a laser emission step S244.

[0134] In the substrate loading step S100, a substrate W is loaded into the processing space 431. For example, in the substrate loading step S100, the transfer robot 320 may place the substrate W on the support unit 420. When the transfer robot 320 places the substrate W on the support unit 420, the lifting unit 436 may move the bowl 430 downward.

[0135] Figure 12 It shows that in the execution Figure 11 FIG. 1 shows the appearance of the liquid processing chamber during the substrate loading step. Figure 12 The substrate W loaded in the substrate loading step S100 may be a substrate W having one or more patterns P1 or one or more layers formed on the front side and a thin film f formed on the back side. In more detail, the substrate W may be a substrate W having a thin film f formed on the back side, the substrate having a predetermined stress applied by processing on the front side. Figures 12 to 14 as well as Figure 18 The pattern P1 formed on the front side of the substrate W is not shown in FIG.

[0136] The thin film f formed on the back side of the substrate W may be a thin film etched by the etching solution supplied from the chemical solution supply unit 440. For example, the thin film f may be a nitride film. For example, the thin film f may include silicon nitride (SiN). The thin film may be a thin film of silicon nitride (Si3N4). The thin film f may be deposited by a deposition process and then loaded in this state. For example, the thin film f may be deposited on the back side of the substrate W using physical vapor deposition (PVD), or may be deposited on the back side of the substrate W by atomic layer deposition (ALD) or chemical vapor deposition (CVD).

[0137] Before loading the substrate W into the processing space 431 , the profile of the surface of the substrate W loaded in the substrate loading step S100 can be measured and obtained.

[0138] The profile of the surface of the substrate W may include stress data for each unit area UA of the substrate. The size of the unit area UA may be the size of the area of ​​the substrate W emitted by the imaging unit 650 after the laser light L is reflected by one micromirror MI when the substrate W is heated by the optical modulation unit 640.

[0139] For example, the profile may include a stress map consisting of stress values ​​based on the surface of the substrate W, a strain map consisting of strain values ​​based on the surface of the substrate W, or data obtained by mapping information for deformation (i.e., bending or curving of the shape of the substrate W) from shape data of the surface of the substrate W.

[0140] In the substrate loading step S100, the substrate W is loaded into the processing space 431 with the back side having the film f formed thereon facing upward. In other words, the substrate W is loaded into the processing space 431 with the front side having the pattern formed thereon facing downward, and the front side of the substrate W may be supported by the support unit 420.

[0141] After the substrate loading step ( S100 ) is completed, the stress relaxation step ( S200 ) is performed. In the stress relaxation step ( S200 ), a portion of the thin film f formed on the back side of the substrate W is etched. More specifically, in the stress relaxation step ( S200 ), the thin film f formed on the back side of the substrate W is etched to different thicknesses within the unit areas UA of the substrate W based on the forward stress applied to each unit area UA. After the etching process, the remaining thin film f within the unit areas UA exerts different reaction forces on the corresponding unit areas UA according to their thickness, thereby relaxing the stress applied to the substrate W.

[0142] As described above, the stress relaxation step S200 may include the chemical solution supplying step S220 and the heating step S240. The chemical solution supplying step S220 and the heating step S240 may be performed sequentially.

[0143] Figure 13 It shows that in the execution Figure 11 FIG. 1 is a diagram showing the appearance of the liquid processing chamber during the chemical solution supply step. Figure 13 As shown, the chemical solution supplying step S220 supplies a chemical solution C onto the substrate W. The chemical solution C supplied in the chemical solution supplying step S220 may be an etching solution for etching the thin film f. The chemical solution C may be referred to as an etchant. According to an embodiment, in the chemical solution supplying step S220, the chemical solution C may be supplied to the substrate W whose rotation has stopped. When the chemical solution C is supplied to the substrate W whose rotation has stopped, the chemical solution C may be supplied in an amount sufficient to form a liquid film or a puddle.

[0144] For example, the amount of the chemical solution C supplied to the substrate W may be supplied so that it covers the entire top surface of the substrate W and does not flow out from the substrate W, or if it flows out, the amount may not be large. If necessary, a liquid film or a puddle may be formed on the substrate W by supplying the chemical solution C to the rotating substrate W or by supplying the chemical solution C to the entire top surface of the substrate W while changing the position of the nozzle 452.

[0145] Figure 14 It shows that in the execution Figure 11 FIG. 4 shows the appearance of the liquid processing chamber during the heating step shown in FIG. Figure 14 As shown, in the heating step S240, the substrate W is heated by emitting laser light L toward the substrate W. More specifically, the laser emitting assembly 500 emits laser light L toward a specific region of the substrate W on which the liquid film is formed. The laser light L emitted toward the substrate W may also be emitted toward the thin film f formed on the back side of the substrate W.

[0146] The laser emitting unit 600 may emit laser light to a specific region and then emit laser light to another region on the substrate W that needs to be heated through a moving unit (not shown).

[0147] As described above, the heating step S240 may include a laser modulation step S242 and a laser emission step S244 .

[0148] The laser modulation step S242 and the laser emission step S244 may be performed sequentially.

[0149] In the laser modulation step S242, the optical modulation unit 640 can change the shape or distribution of the laser light L individually or simultaneously by adjusting the on / off state of the micromirrors MI, and can form an emission pattern of the laser light L. The emission pattern of the laser light L modulated by the optical modulation unit 640 can be obtained based on the stress data of the unit area of ​​the substrate W (i.e., the stress map of the substrate W) obtained before the substrate loading step S100.

[0150] The control unit 30 obtains a reaction force map that can mitigate the stress based on the stress map of the substrate W. The control unit 30 obtains a data map of the thickness of the thin film f in each of the unit areas UA, so that stress corresponding to corresponding points can be applied to each unit area UA of the thin film f formed on the back side of the substrate W according to the reaction force map. The control unit 30 can obtain a temperature gradient for heating each unit area UA based on the data map of the thickness of the thin film f in each unit area UA, convert the temperature gradient into an optical profile, and form an emission pattern of the laser light L based on the obtained optical profile.

[0151] The laser emitting step S144 heats the thin film f by emitting light toward the backside of the substrate W, which has a liquid film formed from the chemical solution C. The chemical solution C etches the entire pattern on the substrate W, and the area onto which the laser light L was emitted is further etched by the heating. The extent of etching depends on the amount of heat transmitted by the laser light L per unit time. The optical modulation unit 640 of the present disclosure can form emission patterns having various shapes, thereby enabling various control methods for etching the substrate W. As described above, by adjusting the amount of heat in each unit area UA based on data regarding the thickness of the thin film f in each unit area UA by forming an emission pattern, etching can be adjusted so that the thin film f is etched differently in each unit area UA. In other words, by asymmetrically etching the thin film f in the unit areas UA, the thickness of the thin film f can be adjusted to be different in each unit area UA. During the laser emitting step S144, the support unit 420 can support the substrate W without rotating the substrate W.

[0152] Figure 15 is a diagram showing stress applied to a substrate on which no thin film is formed on the back side.

[0153] Figure 16 It shows that in the execution Figure 11 A diagram showing the stress applied to a substrate supported on a support unit before a heating step is shown.

[0154] Figure 17 It shows that in the execution Figure 11 A diagram showing the stress applied to a substrate supported on a support unit after a heating step is shown.

[0155] exist Figures 15 to 17 , a substrate W is shown with its front side having a pattern facing upwards.

[0156] Reference again Figure 15 As described above, stress is applied to the substrate W having one or more layers (ie, one or more patterns P1 formed on the front side due to a series of processes of depositing and removing films). Figure 15 Such stress, indicated by the arrows in , may cause warping in the substrate W.

[0157] According to an embodiment of the present disclosure, a thin film f( Figure 16 ), and then, by modulating the laser L to emit the emission pattern to the thin film f, the thin film f is etched to different thicknesses in the unit areas UA of the substrate W based on the normal stress applied to each of the unit areas UA. After the etching process, the thin film f remaining in the unit area UA applies different reaction forces to the corresponding unit areas UA according to the thickness, thereby, as shown in FIG. Figure 17 As shown, the stress applied to the substrate W can be relaxed by canceling the stress. Furthermore, by adjusting the thickness of the thin film f formed in the thin film forming step and adjusting the thickness of the thin film f in each of the unit areas UA in the stress relaxing step S200, the direction and degree of the stress applied to the substrate W due to the thin film f can be adjusted.

[0158] Furthermore, since the etching gradient of the thin film f is adjusted by adjusting the distribution and shape of the laser L differently in the unit area UA using the optical modulation unit 640, it is possible to effectively alleviate not only the substrate-scale stress, but also the more local scale stress on the substrate W (i.e., die-level or chip-level stress), and it is possible to effectively alleviate the stress of complex distribution expressed in a high order by asymmetric heating of the substrate.

[0159] After the heating step S240, the flushing liquid supplying step S260 is performed.

[0160] Figure 18 is a diagram illustrating the appearance of a liquid processing chamber during the execution of a rinsing liquid supplying step according to an embodiment. In the rinsing liquid supplying step ( S260 ), rinsing liquid R is supplied to a substrate W. More specifically, in the rinsing liquid supplying step ( S260 ), rinsing liquid R can be supplied to a rotating substrate W. The rinsing liquid R supplied to the substrate W can remove etching impurities generated during the stress relaxation step ( S200 ). In other words, the rinsing liquid R can remove particles from the substrate W that were etched in the thin film f during the stress relaxation step ( S200 ).

[0161] When the rinsing liquid supply step ( S260 ) is completed, the substrate can be unloaded from the processing space 431 . Before unloading the substrate, a drying step can be optionally performed in the liquid processing chamber 400 . In the drying step, the substrate W can be dried. The drying step can be performed in a drying chamber (not shown) after the substrate is unloaded from the processing space 431 .

[0162] An additional process may be performed on the front side of the substrate W that has undergone the process including the stress relaxation step S200. For example, a process including one or more of a photolithography process and a deposition process may be additionally performed on the front side of the substrate W. The additional process performed in this case can be applied to the substrate W in a manner that reduces or minimizes overlay error due to the relaxation of the stress applied to the substrate W by the stress relaxation step S200.

[0163] After the additional process is completed, the thin film f on the back side of the substrate W may be removed. Figure 19 is a diagram illustrating a substrate after additional processes and thin film removal steps are performed.

[0164] Reference again Figure 19 , due to additional processes (e.g. Figure 17 (a deposition process further performed on the front side of the substrate W as shown), so that an additional film P2 is stacked and the thin film f on the back side of the substrate W can be removed.

[0165] In the above embodiments and drawings, a substrate W having a pattern formed on the front side and a thin film f on the back side is supported by the support unit 420 with the front side facing downward. In a series of processes in which the back side is etched while the front side of the substrate W is supported on the support unit 420, additional processing may be performed on the front side of the substrate W having the pattern on the front side in order to protect the front side of the substrate W. For example, one or more protective layers may be deposited on the front side of the substrate W before performing the substrate loading step S100.

[0166] In the above embodiment, it can be seen from the figure that in the heating step S240 (such as Figure 14 ), the laser emitting unit 600 emits laser light to a specific area in the figure, and it is described that the laser light can be emitted to another area to be heated on the substrate W through a moving unit (not shown). However, differently from this, the laser emitting unit 600 may emit laser light to the entire area of ​​the substrate W at once in the heating step S240.

[0167] In the above embodiment, it is described that one laser emitting unit 600 emits laser light L to a specific area of ​​the substrate W. However, differently from this, a plurality of laser emitting units 600 may be provided, and the laser emitting units 600 may respectively emit laser light L to different areas of the substrate W. Alternatively, one laser emitting unit 600 may emit laser light L to the entire area of ​​the substrate W.

[0168] In the above embodiment, the substrate W processed in the liquid processing chamber 400 is exemplified as a substrate W having one or more patterns P1 or one or more layers formed on the front side, but the present disclosure is not limited thereto. The substrate processing method according to the present disclosure can also be applied to substrates W of various types and shapes that have stress and require stress relief, such as masks or glass substrates.

[0169] In the above embodiment, the size of the unit area UA is described as being the size of the area where the laser light L is reflected by a single micromirror MI and emitted onto the substrate W by the imaging unit 650 when the substrate W is heated by the optical modulation unit 640. However, the present disclosure is not limited thereto. The size of the unit area UA can be varied in various ways depending on the size of the substrate W to be processed, the thickness of the thin film to be etched, the required heat, and the like. Furthermore, the emission pattern and the size of the emission area can be varied by adjusting the micromirror MI.

[0170] It should be understood that exemplary embodiments are disclosed herein and that other modifications may be made. Individual elements or features of a particular exemplary embodiment are generally not limited to that particular exemplary embodiment, but are interchangeable and, even if not specifically shown or described, may be used in a selected exemplary embodiment where applicable. Such modifications should not be considered to be contrary to the spirit and scope of the present disclosure, and all such modifications apparent to those skilled in the art are intended to be included within the scope of the appended claims.

Claims

1. A substrate processing method, comprising: a substrate loading step of loading a substrate into the processing space, the substrate having a pattern formed on the front side and a thin film formed on the back side; as well as a stress relaxation step of relaxing the stress applied to the substrate, Wherein, the stress relaxation step includes: a treatment liquid supplying step of supplying treatment liquid to the thin film; and a heating step of heating the back side of the substrate by emitting laser light toward the back side of the substrate, Wherein, the heating step comprises: a laser modulation step of forming a laser emission pattern based on stress applied to each of the unit areas on the substrate by modulating laser light using a digital micromirror device unit; and a laser emitting step of emitting the laser emission pattern modulated by the digital micromirror device unit to the back side of the substrate.

2. The substrate processing method according to claim 1, wherein: The digital micromirror device unit comprises: a micromirror configured to be rotatable; and A plate substrate on which the micromirrors are mounted.

3. The substrate processing method according to claim 1, wherein: After the stress relaxation step, additional processing steps are performed on the front side of the substrate, and A film removal step of removing the film on the back side is performed after the additional process step.

4. The substrate processing method according to claim 1, wherein: The thin film is a nitride film.

5. The substrate processing method according to claim 1, wherein: The treatment liquid is an aqueous phosphoric acid solution.

6. The substrate processing method according to claim 1, wherein: The thin film is deposited on the back side of the substrate by a deposition process.

7. The substrate processing method according to claim 1, wherein: The stress applied to each of the unit regions is obtained by a stress map that maps stress data from shape data of the surface of the substrate, and The digital micromirror device unit forms the emission pattern based on the stress map in the laser modulation step.

8. The substrate processing method according to claim 7, wherein: In the laser modulation step, obtaining thickness data of the thin film based on the stress map, wherein the thickness data is used to apply a reaction force to the stress existing in the unit area of ​​the substrate, and The emission pattern is formed based on the thickness data of the thin film.

9. The substrate processing method according to claim 1, wherein: In the substrate loading step, the substrate is loaded into the processing space in a state where the back side faces upward.

10. A substrate processing device, comprising: a supporting unit on which a substrate is placed, the substrate having a pattern surface having a pattern formed thereon and a non-pattern surface having a thin film formed thereon; a treatment liquid supply unit that supplies treatment liquid to the film; as well as a laser emitting unit that emits laser light toward the thin film of the substrate, the substrate being supported on the supporting unit and supplied with the processing liquid, Wherein, the laser emitting unit includes: a laser source that generates laser light; and a digital micromirror device unit that modulates the laser light generated by the laser light source, Wherein, the digital micromirror device unit includes: a micromirror configured to be rotatable; and A plate substrate on which the micromirrors are mounted.

11. The substrate processing apparatus according to claim 10, further comprising a control unit, in, The control unit controls the digital micromirror device unit to form a laser emission pattern based on stress applied to each of the unit regions on the substrate.

12. The substrate processing apparatus according to claim 11, wherein: The stress applied to each of the unit regions is obtained by a stress map that maps stress data from shape data of the surface of the substrate, and The digital micromirror device unit forms the emission pattern based on the stress map.

13. The substrate processing apparatus according to claim 10, wherein: The laser emitting unit further includes an imaging unit that adjusts the laser modulated by the digital micromirror device unit and emits the laser to the substrate to correspond to an area to which the laser is emitted, and The imaging unit includes a plurality of lenses that adjust an area and a path of the modulated laser light.

14. A substrate processing method, comprising: a substrate loading step of loading a substrate into the processing space, the substrate having a pattern formed on the front side and having a nitride film formed on the back side; a stress relaxation step of relaxing the stress applied to the substrate, Wherein, the stress relaxation step includes: a treatment liquid supplying step of supplying a phosphoric acid aqueous solution to the nitride film; and a heating step of heating the nitride film by emitting laser light to the nitride film.

15. The substrate processing method according to claim 14, wherein: The heating step comprises: a laser modulation step of forming a laser emission pattern based on stress applied to each of the unit areas on the substrate by modulating laser light using a digital micromirror device unit; and a laser emitting step of emitting the laser emission pattern modulated by the digital micromirror device unit to the nitride film, and The thickness of the nitride film is adjusted differently in the unit region by adjusting the heating amount of the laser in the stress relaxation step.

16. The substrate processing method according to claim 15, wherein: obtaining thickness data of the nitride film to apply a reaction force to the stress existing in each of the unit regions of the substrate, and The laser emission pattern is formed based on the thickness data of the nitride film in the stress relaxation step.

17. The substrate processing method according to claim 14, wherein: After the stress relaxation step, additional processes are performed on the front side of the substrate, and The substrate processing method further includes a thin film removing step of removing the nitride film after the additional process.

18. The substrate processing method according to claim 14, wherein: The nitride film is deposited on the back side of the substrate by a deposition process.

19. The substrate processing method according to claim 14, wherein: The substrate processing method further includes obtaining a stress map before the stress relaxation step, wherein the stress map maps stress data from shape data of the surface of the substrate.

20. The substrate processing method according to claim 15, wherein: The digital micromirror device unit comprises: a micromirror configured to be rotatable; and a plate substrate on which the micromirrors are mounted, and In the laser modulation step, a direction in which each of the micromirrors reflects laser light is adjusted, and the laser light is modulated by selectively switching an on state for reflecting the laser light toward the substrate and an off state for dumping the laser light.

Images