Anisotropic conductive member and bonded body

Abstract

Provided is an anisotropic conductive member in which buckling of conductive paths is suppressed, and a bonded body. The anisotropic conductive member has: an insulating substrate having electrical insulation; and a plurality of conductive paths that penetrate in a thickness direction of the insulating substrate and are disposed in an electrically insulated state from each other, and that have a protruding portion protruding from at least one face of the insulating substrate. In a cross section in the thickness direction of the insulating substrate, the face of the insulating substrate from which the protruding portion of the conductive path protrudes has a plurality of top portions and a plurality of contact portions that respectively contact the insulating substrate. An arithmetic mean distance in the thickness direction of the plurality of contact portions and the plurality of top portions is 2 nm to 200 nm.

Description

TECHNICAL FIELD

[0001] The present application relates to an anisotropic conductive member and a bonded body each having a plurality of conductive paths provided so as to penetrate an insulating base material in a thickness direction thereof and having a protruding portion protruding from at least one surface of the insulating base material, and particularly to an anisotropic conductive member and a bonded body each having a surface of the insulating base material from which the protruding portion protrudes, the surface having a plurality of top portions and a plurality of contact portions at which the protruding portion contacts the insulating base material. BACKGROUND

[0002] There is an anisotropic conductive member having a conductive path in which a conductive material such as metal is filled in a plurality of through holes provided on an insulating base material.

[0003] The anisotropic conductive member is widely used as an electrical connection member for electronic parts such as semiconductor elements and the like and as a test connector for functional testing, by being inserted between the electronic parts and a circuit board and being pressed to obtain electrical connection between the electronic parts and the circuit board.

[0004] In particular, electronic parts such as semiconductor elements are significantly downsized. In a direct connection to a wiring substrate such as a conventional wire bonding, flip chip bonding, thermocompression bonding, and the like, the stability of electrical connection of the electronic parts is sometimes not sufficiently ensured, and thus the anisotropic conductive member is attracting attention as an electronic connection member.

[0005] As the anisotropic conductive member, for example, Patent Literature 1 describes an anisotropic conductive bonding member having an insulating base material composed of an inorganic material, a plurality of conductive paths composed of a conductive member, and a resin layer provided on the entire surface of the insulating base material. The conductive paths are provided so as to penetrate the insulating base material in a thickness direction thereof in an insulating state from each other. The conductive paths are parallel to each other and have a protruding portion protruding from the surface of the insulating base material, and the end portion of the protruding portion is embedded in the resin layer.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: Japanese Patent Application Publication No. 2018-037509 SUMMARY

[0009] PROBLEMS TO BE SOLVED BY THE INVENTION

[0010] In a case where the anisotropic conductive member of Patent Document 1 described above is used as an electronic connection member, the conductive paths of the anisotropic conductive member are joined with electrodes and the like of a semiconductor element as a connection target. At the time of joining, the protruding portions of the conductive paths that protrude from the surface of the insulating substrate sometimes are bent.

[0011] If the protruding portions of the conductive paths are bent at the time of joining, the joining of the conductive paths with the electrodes and the like of the semiconductor element can be insufficient, and sufficient joining strength can not be obtained. Therefore, it is desirable to avoid the bending of the conductive paths.

[0012] An object of the present application is to provide an anisotropic conductive member and a joined body in which the bending of a conductive path is suppressed.

[0013] Means for solving the technical problem

[0014] To achieve the object described above, [Invention 1] is an anisotropic conductive member having: an insulating substrate having electrical insulation; and a plurality of conductive paths that penetrate in the thickness direction of the insulating substrate and are provided in an electrically insulated state from each other, and that have a protruding portion that protrudes from at least one surface of the insulating substrate, in a cross section in the thickness direction of the insulating substrate, the surface of the insulating substrate from which the protruding portion of the conductive path protrudes has a plurality of top portions, and a plurality of contact portions at which the plurality of protruding portions respectively contact the insulating substrate, and the arithmetic mean distance of the plurality of contact portions from the plurality of top portions in the thickness direction is 2 nm to 200 nm.

[0015] [Invention 2] is the anisotropic conductive member described in [Invention 1], in which,

[0016] The conductive path is composed of Cu, Au, or Al.

[0017] [Invention 3] is the anisotropic conductive member described in [Invention 1] or [2], in which,

[0018] When the diameter of the protruding portion is set as d, and the length of the protruding portion in the thickness direction of the insulating substrate is set as h, d / h is 0.1 to 20.

[0019] [Invention 4] is the anisotropic conductive member described in any one of [Inventions 1] to [3], in which,

[0020] The length of the protruding portion in the thickness direction of the insulating substrate is 6 to 6000 nm.

[0021] The application [5] is a bonded body in which an anisotropic conductive member is bonded to a bonded member, and a resin is filled between the anisotropic conductive member and the bonded member, the anisotropic conductive member has: an insulating substrate having electrical insulation; and a plurality of conductive paths that penetrate in a thickness direction of the insulating substrate and are provided in an electrically insulated state from each other, and that have a protruding portion protruding from at least one face of the insulating substrate, in a cross section in the thickness direction of the insulating substrate, the face of the insulating substrate from which the protruding portion of the conductive path protrudes has a plurality of top portions, and a plurality of contact portions that respectively contact the insulating substrate, and an arithmetic mean distance of the plurality of contact portions and the plurality of top portions in the thickness direction is 2 nm to 200 nm.

[0022] The application [6] is the bonded body described in the application [5], in which,

[0023] The bonded member has a metal layer and a resin layer, and the metal layer is exposed from the resin layer.

[0024] The application [7] is the bonded body described in the application [5], in which,

[0025] The bonded member has a plurality of metal layers, and a height of at least one metal layer of the plurality of metal layers is different.

[0026] The application [8] is the bonded body described in the application [6], in which,

[0027] The bonded member has a bonding face on which a plurality of metal layers are provided, and an area of the bonding face is wider than an area of a face from which the protruding portion of the anisotropic conductive member protrudes.

[0028] Invention effects

[0029] According to the present application, it is possible to provide an anisotropic conductive member and a bonded body in which buckling of a conductive path is suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a schematic cross-sectional view that shows an example of an anisotropic conductive member of an embodiment of the present application.

[0031] Figure 2 is a schematic plan view that shows an example of an anisotropic conductive member of an embodiment of the present application.

[0032] Figure 3 is a schematic cross-sectional view that shows a part of an example of an anisotropic conductive member of an embodiment of the present application in an enlarged manner.

[0033] Figure 4 is a schematic cross-sectional view that shows a first example of a bonded body of an embodiment of the present application.

[0034] Figure 5is a schematic cross-sectional view showing a part of a first example of a bonded body that amplifies an embodiment of the present application.

[0035] Figure 6 is a schematic cross-sectional view showing a manufacturing method of a first example of a bonded body that amplifies an embodiment of the present application.

[0036] Figure 7 is a schematic cross-sectional view showing a part of a second example of a bonded body that amplifies an embodiment of the present application.

[0037] Figure 8 is a schematic cross-sectional view showing one step of an example of a manufacturing method of an anisotropic conductive member that amplifies an embodiment of the present application.

[0038] Figure 9 is a schematic cross-sectional view showing one step of an example of a manufacturing method of an anisotropic conductive member that amplifies an embodiment of the present application.

[0039] Figure 10 is a schematic cross-sectional view showing one step of an example of a manufacturing method of an anisotropic conductive member that amplifies an embodiment of the present application.

[0040] Figure 11 is a schematic cross-sectional view showing one step of an example of a manufacturing method of an anisotropic conductive member that amplifies an embodiment of the present application.

[0041] Figure 12 is a schematic cross-sectional view showing one step of an example of a manufacturing method of an anisotropic conductive member that amplifies an embodiment of the present application.

[0042] Figure 13 is a schematic cross-sectional view showing one step of an example of a manufacturing method of an anisotropic conductive member that amplifies an embodiment of the present application.

[0043] Figure 14 is a schematic cross-sectional view showing one step of an example of a manufacturing method of an anisotropic conductive member that amplifies an embodiment of the present application. DETAILED DESCRIPTION

[0044] Hereinafter, the anisotropic conductive member and the bonded body of the present application will be described in detail according to preferred embodiments shown in the drawings.

[0045] In addition, the drawings described below are illustrative drawings for explaining the present application, and are simplified or exaggerated for explaining the present application. Therefore, the present application is not limited to the drawings shown below.

[0046] In addition, "〜" indicating a numerical range below includes the numerical values written on both sides. For example, ε is a numerical value εa〜a numerical value εb means that the range of ε includes the numerical value εaand the numerical value εβ εα≤ ε ≤ εβ β .

[0047] With respect to parallel and orthogonal, unless otherwise specifically noted, the range of error generally allowed in the art is included.

[0048] With respect to temperature, time, and pressure, unless otherwise specifically noted, the range of error generally allowed in the art is included.

[0049] Also, "same" includes the range of error generally allowed in the art. Also, "entire face" and the like include the range of error generally allowed in the art.

[0050] Hereinafter, an anisotropic conductive member and a bonded body will be described in detail.

[0051] [Example of Anisotropic Conductive Member]

[0052] Figure 1 is a schematic cross-sectional view showing an example of an anisotropic conductive member of an embodiment of the present application. Figure 2 is a schematic plan view showing an example of an anisotropic conductive member of an embodiment of the present application. Figure 3 is a schematic cross-sectional view showing a part of an example of an anisotropic conductive member of an embodiment of the present application.

[0053] In Figure 1 and Figure 3 , a cross section in the thickness direction Dt of the insulating substrate 20 is shown. Also, Figure 2 is a plan view when viewed from the surface 20a side of the insulating substrate 20 of Figure 1 , and shows a state in which the resin layer 24 is not present.

[0054] Figure 1 The anisotropic conductive member 10 shown in FIG. 1 has an insulating substrate 20 having electrical insulation, and a plurality of conductive paths 22 that penetrate the insulating substrate 20 in the thickness direction Dt and are provided in an electrically insulated state from each other, and that have a protruding portion protruding from at least one face. Also, a resin layer 24 that covers at least one face of the insulating substrate 20 is provided. The anisotropic conductive member 10 has electrical conductivity in the thickness direction Dt of the insulating substrate 20.

[0055] In addition, in the anisotropic conductive member 10, the resin layer 24 is not necessarily required, and a structure in which the resin layer 24 is not present can also be used.

[0056] Multiple conductive paths 22 are disposed on the insulating substrate 20 in a state of electrical insulation from each other. For example, the insulating substrate 20 has multiple fine holes 21 extending along the thickness direction Dt. Conductive paths 22 are disposed in the multiple fine holes 21. The conductive paths 22 protrude from the surface 20a of the insulating substrate 20. Furthermore, the conductive paths 22 protrude from the back surface 20b of the insulating substrate 20.

[0057] The conductive path 22 only needs to protrude from one surface along the thickness direction Dt of the insulating substrate 20. For example, a resin layer 24 is provided on the surface of the insulating substrate 20 where the conductive path 22 protrudes. The resin layer 24 covers the protrusion 22a of the conductive path 22, and the protrusion 22a is embedded in the resin layer 24. Furthermore, the resin layer 24 covers the protrusion 22b of the conductive path 22, and the protrusion 22b is embedded in the resin layer 24.

[0058] The insulating substrate 20 is, for example, composed of an anodic oxide film. The anodic oxide film is formed, for example, by anodizing the valve metal.

[0059] The surface 20a and the back surface 20b of the insulating substrate 20 are opposite to each other in the thickness direction Dt of the insulating substrate 20.

[0060] The anisotropic conductive component 10 has anisotropic conductivity and is conductive in the thickness direction Dt as described above, but its conductivity in the direction x, which is parallel to the surface 20a of the insulating substrate 20, is very low. Direction x is orthogonal to the thickness direction Dt.

[0061] like Figure 2 As shown, the anisotropic conductive component 10 is, for example, circular in shape. Furthermore, the shape and size of the anisotropic conductive component 10 are appropriately determined according to its application, etc., and its shape may be, for example, rectangular.

[0062] For example, the anisotropic conductive component 10 is joined in a state where the resin layer 24 is absent or, even if the resin layer 24 is present, the surface 24a is empty.

[0063] like Figure 3 As shown, the surface 20a of the insulating substrate 20 is uneven and has a textured structure. Multiple recesses 20d are provided on the surface 20a of the insulating substrate 20. A recess 20d is provided in each conductive path 22. The recesses 20d are configured to surround the conductive path 22 with the conductive path 22 as its center.

[0064] exist Figure 3 In the cross-section along the thickness direction Dt of the insulating substrate 20 shown, the protrusion 22a protrudes from the surface of the insulating substrate 20, i.e. Figure 3 The surface 20a has multiple top Pcs and multiple contact portions Vcs.

[0065] The top portion Pc is a portion of the surface of the insulating base material 20 on the side of the protrusion 22a in the cross section in the thickness direction Dt of the insulating base material 20. The top portion Pc is, for example, a boundary portion of adjacent recesses 20d.

[0066] The contact portion Vc is a portion in which the plurality of protrusions 22a respectively contact the insulating base material 20 in the cross section in the thickness direction Dt of the insulating base material 20. The contact portion Vc is present at the end portion of the insulating base material 20 on the side of the protrusion 22a. More specifically, the contact portion Vc is present at the bottom of the recess 20d on the back surface 20b side of the insulating base material 20.

[0067] In the anisotropic conductive member 10, the arithmetic mean distance between the plurality of contact portions Vc and the plurality of top portions Pc in the thickness direction Dt is 2 nm to 200 nm, preferably 2 nm to 150 nm, more preferably 20 nm to 100 nm, and further preferably 20 nm to 60 nm.

[0068] In the anisotropic conductive member 10, by setting the arithmetic mean distance δ between the plurality of contact portions Vc and the plurality of top portions Pc in the thickness direction Dt in the structure of the surface 20a of the insulating base material 20 to which the protrusion 22a protrudes to 2 nm to 200 nm, in the case where a force is applied to the protrusion 22a in a direction parallel to the thickness direction Dt, the protrusion 22a is allowed to bend more in the direction x than in the case where the surface 20a of the insulating base material 20 is flat with an arithmetic mean distance of less than 2 nm. That is, the side surface 22c of the protrusion 22a is allowed to be displaced more in the direction x in the recess 20d than in the case where the surface 20a of the insulating base material 20 is flat. Thus, buckling of the protrusion 22a can be suppressed, and therefore a sufficient joining strength to a connection object can be obtained, and sufficient conductivity to the connection object can be ensured. Furthermore, contact with an adjacent protrusion is not made, and occurrence of a short circuit can be suppressed.

[0069] Furthermore, in the case where a force is applied to the protrusion 22a in a direction parallel to the thickness direction Dt, the protrusion 22a is allowed to deform in such a manner that the diameter thereof increases in the direction x than in the case where the surface 20a of the insulating base material 20 is flat. At this time, the protrusion 22a is allowed to increase in diameter in the direction x in the recess 20d. Thus, buckling of the protrusion 22a can be suppressed. At this time, a sufficient joining strength to a connection object can be obtained, and sufficient conductivity to the connection object can be ensured, and furthermore, contact with an adjacent protrusion is not made, and occurrence of a short circuit can be suppressed.

[0070] When the arithmetic mean distance δ is less than 2 nm, when a force is applied to the protrusion 22a in a direction parallel to the thickness direction Dt, the amount of displacement of the protrusion 22a in the x-direction is small, and the protrusion 22a is bent. Therefore, sufficient bonding strength to the connected object cannot be obtained. If the protrusion 22a is bent, it may sometimes come into contact with adjacent protrusions, and sufficient conductivity with the connected object cannot be ensured.

[0071] When the aforementioned arithmetic mean distance δ exceeds 200 nm, the end on the insulating substrate 20 side is located more centrally in the thickness direction Dt of the insulating substrate 20, the recess 20d becomes deeper, and the protrusion 22a becomes substantially longer. Therefore, the protrusion is prone to buckling. When a force is applied to the protrusion 22a in a direction parallel to the thickness direction Dt, the protrusion buckles and comes into contact with an adjacent protrusion, thereby failing to ensure sufficient conductivity with the connected object.

[0072] The arithmetic mean distance δ can be calculated, for example, as follows.

[0073] First, the anisotropic conductive component 10 is machined using a focused ion beam (FIB) to expose the cross section of the insulating substrate 20 in the thickness direction Dt.

[0074] A 150k magnification image of the cross section of the insulating substrate 20 along the thickness direction Dt was obtained using a field emission scanning electron microscope (FE-SEM).

[0075] In the photographic image, a reference point Pb is set at an arbitrary position on the back side 20b of the insulating substrate 20, which is opposite to the surface 20a. A reference line Ls is set parallel to the direction x passing through the reference point Pb.

[0076] In the photographic image, 10 top Pcs are selected from the points corresponding to the top Pcs in descending order relative to the baseline Ls. Similarly, 10 contact Vcs are selected from the points corresponding to the contact Vcs in ascending order relative to the baseline Ls.

[0077] In the photographic image, the distance from the reference line Ls is calculated for each of the 10 selected top Pc points. The average of the 10 distances between the 10 selected top Pc points and the reference line Ls is calculated using the least squares method. The average value calculated using the least squares method is shown as a point in the photographic image. A line Lc parallel to the direction x passing through the point representing the average value of the top Pc points is calculated. The plane containing this parallel line Lc is the average surface of the surface 20a of the insulating substrate 20. Furthermore, the average surface of the surface 20a of the insulating substrate 20 serves as a reference for the length of the protrusion 22a.

[0078] In the photographic image, for each of the 10 selected contact points Vc, the distance from the baseline Ls is calculated. The average of the 10 distances from the 10 contact points Vc to the baseline Ls is calculated using the least squares method. This average value is then plotted as points in the photographic image. A line Lb parallel to the direction x passing through the point representing the average value of the contact points Vc is determined. The plane containing this parallel line Lb is the average surface of the contact points Vc.

[0079] The arithmetic mean distance δ mentioned above is the absolute value of the difference between the average value of the top Pc calculated using the least squares method and the average value of the contact portion Vc calculated using the least squares method. That is, the arithmetic mean distance δ is the distance between parallel lines Lc and Lb on the thickness direction Dt. Therefore, by calculating the distance between parallel lines Lc and Lb on the thickness direction Dt, the arithmetic mean distance δ can be obtained.

[0080] Additionally, although not shown in detail, the back surface 20b of the insulating substrate 20 is also... Figure 3 The insulating substrate 20 shown has the same structure as the surface 20a. The arithmetic mean distance δ of the back surface 20b of the insulating substrate 20 is also calculated in the same manner as that of the surface 20a.

[0081] [Example 1 of a joint]

[0082] Figure 4 This is a schematic cross-sectional view showing a first example of a joint body according to an embodiment of the present invention. Figure 5 This is a schematic cross-sectional view showing a portion of a first example of a joint according to an embodiment of the present invention.

[0083] In addition, Figure 4 and Figure 5 In the middle, to and Figure 1-3 Structures with the same structure as the anisotropic conductive component 10 shown are labeled with the same symbols, and their detailed descriptions are omitted.

[0084] Figure 4 The junction 12 shown is formed by bonding an anisotropic conductive component 10 with semiconductor elements 30 and 31, which are the components to be bonded. The components to be bonded are the objects to be connected.

[0085] The bonding body 12 is filled with resin between the anisotropic conductive component 10 and the component to be bonded.

[0086] For example, a semiconductor element 30 has three electrodes 34 and an insulating layer 36 on the surface 32a of an element substrate 32 to prevent conduction between the three electrodes 34. The three electrodes 34 are at the same height from the surface 32a of the element substrate 32.

[0087] Furthermore, the semiconductor element 31 has, for example, three electrodes 38 and an insulating layer 39 preventing conduction between the three electrodes 38 on the surface 37a of the element substrate 37. The three electrodes 38 are at the same height from the surface 37a of the element substrate 37.

[0088] Electrodes 34 and 38 are coupled to the conductive path 22 of the anisotropic conductive component 10. For example, as... Figure 5 As shown, the electrode 34 is joined with its surface 34a in contact with the protrusion 22a of the conductive path 22. At this time, the protrusion 22a of the conductive path 22 is pressed by the surface 34a of the electrode 34, causing deformation of the protrusion 22a, thus suppressing buckling of the protrusion 22a as described above. Therefore, sufficient bonding strength to the semiconductor element 30 and the semiconductor element 31 can be obtained in the joint 12. Furthermore, by suppressing buckling of the protrusion 22a, sufficient conductivity with the connected object can be ensured, and contact with adjacent protrusions is prevented, thus suppressing the occurrence of short circuits.

[0089] Electrodes 34 and 38 are used for exchanging signals with the outside world, or for transmitting or receiving voltage or current, and are made of copper or solder, for example. Electrodes made of solder are also called solder bumps.

[0090] Regarding the insulating layer 39, its structure is not particularly limited as long as it can prevent conduction between electrodes, and it can be composed of known insulating layers used in semiconductor devices. The insulating layer 39 is composed of, for example, silicon oxide film (SiO2), silicon nitride film (Si3N4), PSG (Phospho Silicate Glass) film, BPSG (Boron Phospho Silicate Glass) film, and SOG (Spin On Glass) film.

[0091] The resin layer 33 is formed, for example, from the resin layer 24 of the anisotropic conductive component 10. In this case, the anisotropic conductive component 10 having the resin layer 24 is used for bonding.

[0092] Furthermore, the resin layer 33 can also be formed from the resin layer (not shown) disposed on the surface 34a of the electrode 34 of the semiconductor element 30 and the resin layer (not shown) disposed on the surface 38a of the electrode 38 of the semiconductor element 31.

[0093] Furthermore, after the conductive path 22 of the anisotropic conductive component 10 is joined with the electrodes 34 and 38, a resin agent can be supplied between the conductive path 22 and the electrode 34 and between the conductive path 22 and the electrode 38 to form a resin layer 33.

[0094] (Manufacturing method of the first example of a joint)

[0095] Figure 4 The connector 12 shown is, for example, as Figure 6 Join as shown.

[0096] Figure 6 This is a schematic cross-sectional view illustrating a manufacturing method of a first example of a joint according to an embodiment of the present invention.

[0097] In addition, Figure 6 In the middle, to and Figure 4 and Figure 5 Structures identical to those shown in the assembly 12 are labeled with the same symbols, and their detailed descriptions are omitted.

[0098] like Figure 6 As shown, semiconductor elements 30 and 31 are arranged with anisotropic conductive component 10 sandwiched between them. At this time, alignment is performed, for example, using alignment marks (not shown) respectively provided on semiconductor elements 30, 31 and anisotropic conductive component 10.

[0099] Furthermore, regarding alignment using alignment marks, there are no particular limitations, such as as long as an image or reflected image of the alignment marks can be obtained and the position information of the alignment marks can be determined, and known alignment methods can be appropriately utilized.

[0100] like Figure 6 As shown, a resin layer 24 is provided on the anisotropic conductive component 10, and the resin layer 24 is formed Figure 4 The resin layer 33 of the shown joint 12.

[0101] Next, semiconductor element 30 is bonded to anisotropic conductive component 10, and semiconductor element 31 is bonded to anisotropic conductive component 10. This enables the manufacture of... Figure 4 The assembly 12 shown.

[0102] Furthermore, the process of joining semiconductor element 30 with anisotropic conductive component 10 and semiconductor element 31 with anisotropic conductive component 10 described above is a joining process. In the joining process, for example, the joining can be performed under predetermined conditions in a temporary joining state, but the temporary joining can also be omitted. In addition, the joining in the joining process is also called formal joining.

[0103] Temporary bonding refers to fixing the semiconductor elements 30, 31 and the anisotropic conductive component 10 in a state of alignment.

[0104] The temperature conditions during the temporary bonding step are not particularly limited, but are preferably 0°C to 300°C, more preferably 10°C to 200°C, and especially preferably room temperature (23°C) to 100°C.

[0105] Similarly, the pressure conditions in the temporary bonding step are not particularly limited, but are preferably 10 MPa or less, more preferably 5 MPa or less, and especially preferably 1 MPa or less.

[0106] There are no particular limitations on the temperature conditions during formal bonding, but a temperature higher than that of temporary bonding is preferred. Specifically, 120°C to 350°C is more preferred, and 200°C to 300°C is especially preferred.

[0107] Furthermore, there are no particular limitations on the pressure conditions during formal connection, but it is preferably 30 MPa or less, and more preferably 0.1 MPa to 20 MPa.

[0108] Furthermore, there is no particular limitation on the time of formal engagement, which is preferably 1 second to 60 minutes, and more preferably 5 seconds to 10 minutes.

[0109] Under the aforementioned conditions, the protrusion 22a of the conductive path 22 engages with the surface 34a of the electrode 34, and the protrusion 22b of the conductive path 22 engages with the surface 38a of the electrode 38. At this time, as described above, both the protrusions 22a and 22b of the conductive path 22 can resist buckling; for example, they can also resist collapsing and contacting adjacent protrusions 22a and 22b. This ensures sufficient bonding strength and conductivity with the connected object, and also suppresses the occurrence of short circuits.

[0110] [Example 2 of a joint]

[0111] Figure 7 This is a schematic cross-sectional view showing a portion of a second example of a joint body according to an embodiment of the present invention, enlarged.

[0112] In addition, Figure 7 In the middle, to and Figure 4 and Figure 5 Structures identical to those shown in the assembly 12 are labeled with the same symbols, and their detailed descriptions are omitted.

[0113] and Figure 4 and Figure 5 Compared to the shown assembly 12, Figure 7 The difference in the junction 13 shown is that the semiconductor element 30 has electrodes 35 of different heights, and the other structures are the same as those shown. Figure 4 and Figure 5 The assembly 12 shown has the same structure. The height of electrode 35 is greater than that of electrode 34.

[0114] In the junction 13, electrode 34 and the high-profile electrode 35 are bonded to the anisotropic conductive component 10. In the junction 13, electrode 35 is closer to the anisotropic conductive component 10, causing greater deformation of the protrusion 22a of the conductive path 22. As described above, this also suppresses buckling of the protrusion 22a. Thus, even with a structure where the semiconductor element 30 has a relatively high electrode 35, sufficient bonding strength between the semiconductor element 30 and the semiconductor element 31 can be obtained. Furthermore, by suppressing buckling of the protrusion 22a, sufficient conductivity is ensured, and the occurrence of short circuits is also suppressed.

[0115] Furthermore, in the joint body 12 and the joint body 13, the joined components have a joint surface provided with multiple metal layers, and the area of ​​the joint surface is preferably wider than the area of ​​the protruding surface of the anisotropic conductive component.

[0116] Here, in the aforementioned semiconductor elements 30 and 31, multiple electrodes are disposed on the surface of the element substrate, and the surface of the element substrate is equivalent to a bonding surface. The area of ​​the surface of the element substrate is preferably wider than the area of ​​the surface 20a and back surface 20b of the insulating substrate 20 protruding from the protrusions 22a and 22b of the anisotropic conductive member 10.

[0117] The structure of the anisotropic conductive component will be explained in more detail below.

[0118] (Insulating substrate)

[0119] The insulating substrate 20 is electrically insulating and maintains the plurality of conductive pathways 22, which are made of conductive material, in a state of electrical insulation from each other. The insulating substrate 20 has a plurality of micropores 21 forming the conductive pathways 22. The composition of the insulating substrate will be described later.

[0120] The length of the insulating substrate 20 in the thickness direction Dt, i.e., the thickness ht of the insulating substrate 20, is preferably in the range of 1 to 1000 μm, more preferably in the range of 5 to 500 μm, even more preferably in the range of 10 to 300 μm, and particularly preferably 10 μm or more and 30 μm or less. If the thickness of the insulating substrate 20 is within this range, the processability of the insulating substrate 20 becomes good.

[0121] Regarding the thickness of the insulating substrate, the aforementioned line Lc is calculated for both the surface 20a side and the back side 20b side of the insulating substrate 20. The distance between the line Lc on the surface 20a side and the line Lc on the back side 20b side in the thickness direction Dt is defined as the thickness of the insulating substrate.

[0122] The insulating substrate 20, for example, is made of inorganic material and has a resistivity (10 Ω·cm) similar to that of insulating substrates constituting conventionally known anisotropic conductive films.14 For values ​​around Ω·cm, there are no special limitations.

[0123] In addition, the provision "composed of inorganic materials" is used to distinguish it from the polymeric materials that constitute the resin layer described later. It is a provision that the inorganic materials are the main components (50% by mass or more), rather than a provision that limits the insulating substrate to be composed of only inorganic materials.

[0124] Examples of insulating substrates include metal oxide substrates, metal nitride substrates, glass substrates, silicon carbide, silicon nitride and other ceramic substrates, diamond-like carbon and other carbon substrates, polyimide substrates and composites thereof. In addition, an insulating substrate may also be a substrate in which an inorganic material containing 50% or more ceramic or carbon material forms a film on an organic material having through-pores.

[0125] Micropores with a desired average opening diameter are formed in the insulating substrate as through holes. For ease of forming conductive pathways, the insulating substrate is preferably a metal oxide substrate, and more preferably an anodic oxide film of a valve metal.

[0126] Here, valve metals, specifically, include aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, and antimony. Among these, aluminum anodized film (substrate) is preferred from the viewpoint of good dimensional stability and relatively low cost. Therefore, it is preferable to use an aluminum substrate to form the anodized film as an insulating substrate and to manufacture an anisotropic conductive component.

[0127] The thickness of the anodic oxide film is the same as the thickness of the insulating substrate 20.

[0128] <Aluminum substrate>

[0129] There are no particular limitations on the aluminum substrate used to form the anodic oxide film as an insulating substrate. Specific examples include pure aluminum plates; alloy plates with aluminum as the main component and containing trace amounts of dissimilar elements; substrates on which high-purity aluminum is deposited by vapor deposition on low-purity aluminum (e.g., recycled materials); substrates on which high-purity aluminum is coated on the surface of silicon wafers, quartz, glass, etc. by methods such as vapor deposition and sputtering; resin substrates obtained by laminating aluminum; and so on.

[0130] In the aluminum substrate, the aluminum purity of the surface on which the anodic oxide film is formed by the anodizing process is preferably 99.5% by mass or more, more preferably 99.9% by mass or more, and even more preferably 99.99% by mass or more. If the aluminum purity is within the above range, the orderliness of the arrangement of the through holes becomes sufficient. Micropores are pores that become fine pores.

[0131] There are no particular limitations on aluminum substrates, as long as an anodized film can be formed. For example, JIS (Japanese Industrial Standards) 1050 material can be used.

[0132] Furthermore, the surface of the aluminum substrate on which the anodizing process is performed is preferably subjected to heat treatment, degreasing treatment and mirror finishing treatment in advance.

[0133] Here, the same treatments as those described in paragraphs

[0044] to

[0054] of Japanese Patent Application Publication No. 2008-270158 can be performed for heat treatment, degreasing treatment and mirror finishing treatment.

[0134] The mirror finishing process prior to anodizing is, for example, electropolishing, which can be performed using an electropolishing solution containing phosphoric acid.

[0135] <Average diameter of pores>

[0136] The average diameter of the pore 21 is preferably 1 μm or less, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm. The average diameter d of the pore 21 is 1 μm or less. If it is within the above range, a conductive path 22 with the above average diameter can be obtained.

[0137] The average diameter of the pores 21 can be determined, for example, as follows. First, a photographic image is obtained by taking a picture of the surface of the insulating substrate 20 from directly above at a magnification of 100 to 10,000 using a scanning electron microscope (SEM). In the photographic image, at least 20 pores connected in a ring around the perimeter are extracted, their diameters are measured and set as the opening diameters, and the average value of these opening diameters is calculated as the average diameter of the pores.

[0138] Furthermore, regarding magnification, a magnification within the aforementioned range can be appropriately selected to obtain an image capable of capturing more than 20 micropores. The opening diameter is determined by the maximum distance between the ends of the micropore portions. That is, the shape of the micropore opening is not limited to being approximately circular; therefore, when the opening shape is non-circular, the maximum distance between the ends of the micropore portions is set as the opening diameter. Thus, even in the case of a micropore with a shape that integrates two or more micropores, it is considered as a single micropore, and the maximum distance between the ends of the micropore portions is set as the opening diameter.

[0139] <Conductive Pathway>

[0140] As described above, multiple conductive paths 22 are respectively disposed on the insulating substrate 20 (e.g., anodized film) in a state of electrical insulation from each other.

[0141] The multiple conductive paths 22 are each a columnar conductor with conductivity, and are made of a conductive material. The conductive material is not particularly limited, and metals can be cited as examples. Specific examples of metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), zinc (Zn), and cobalt (Co). From the viewpoint of conductivity and formation based on electroplating, copper (Cu), gold (Au), aluminum (Al), nickel (Ni), and cobalt (Co) are preferred as conductive materials, copper (Cu), gold (Au), and aluminum (Al) are more preferred, and copper (Cu) is even more preferred.

[0142] Compared to oxide conductors, metals have superior ductility and are easily deformable, even under compression during bonding. Therefore, conductive paths are preferably made of metals.

[0143] The average diameter d of the conductive path 22 is preferably less than 1 μm, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm.

[0144] The density of conductive paths 22 is preferably 20,000 / mm². 2 The above is preferred to be 2 million per mm. 2 The above is further optimized to 10 million / mm. 2 The above, especially preferred, is 50 million / mm. 2 The optimal value is 100 million pieces / mm. 2 above.

[0145] Furthermore, the center-to-center distance p between adjacent conductive paths 22 is preferably 20 nm to 500 nm, more preferably 40 nm to 200 nm, and even more preferably 50 nm to 140 nm.

[0146] Regarding conductive path 22, the spacing w between it and the adjacent protrusion (reference) Figure 1 The wavelength range is 20nm to 200nm, preferably 40nm to 100nm. If the spacing between the conductive passage 22 and the adjacent protrusion is within the above range, the spacing of the conductive passage 22 can also be maintained on the surface 20a or back surface 20b of the insulating substrate 20 of the conductive passage 22. As a result, short circuits in the conductive passage 22 can be suppressed during bonding, improving the reliability of the bonding process.

[0147] The average diameter of the conductive path can be determined, for example, as follows: First, a photographic image is obtained by taking a picture of the surface of the insulating substrate from directly above at a magnification of 100 to 10,000 using a scanning electron microscope. In the photographic image, at least 20 conductive paths connected in a ring are extracted, their diameters are measured and designated as the opening diameters, and the average value of these opening diameters is calculated as the average diameter of the conductive path.

[0148] Furthermore, regarding the magnification, a magnification within the aforementioned range can be appropriately selected to obtain an image capable of extracting more than 20 conductive paths. Also, when the opening shape is non-circular, the maximum distance between the ends of the conductive path portions is set as the opening diameter. Therefore, even in the case of a conductive path with a shape such as two or more conductive paths integrated, it is considered as one conductive path, and the maximum distance between the ends of the conductive path portions is set as the opening diameter. The average diameter d of the conductive path 22 is the same as the average diameter of the protrusion.

[0149] When the conductive path 22 is not circular on the surface 20a side of the insulating substrate 20, the average diameter of the surface 20a side of the insulating substrate 20 is set to the average diameter of the equivalent diameter of a circle. Furthermore, when the conductive path 22 is not circular on the back surface 20b side of the insulating substrate 20, the average diameter of the back surface 20b side of the insulating substrate 20 is set to the average diameter of the equivalent diameter of a circle.

[0150] Furthermore, the average diameter d on the surface 20a side of the insulating substrate 20 in the conductive path 22 can be determined based on a surface image of the surface 20a of the insulating substrate 20 obtained using a scanning electron microscope. The average diameter d on the back side 20b of the insulating substrate 20 in the conductive path 22 can be determined based on a back side image of the back side 20b of the insulating substrate 20 obtained using a scanning electron microscope.

[0151] As described above, when it is difficult to measure the average diameter due to protrusions when using both surface and back images, the protrusions are removed by dissolution or the like. This results in the formation of fine holes. It is possible to measure the opening diameter of multiple fine holes in the surface image in this state, and use the average opening diameter of the fine holes on the surface to replace the average diameter on the surface side. Similarly, it is possible to measure the opening diameter of multiple fine holes in the back image in this state, and use the average opening diameter of the fine holes on the back side to replace the average diameter on the back side.

[0152] The average opening diameter of the aforementioned pores can be measured, for example, as follows: First, in the aforementioned surface image, 20 locations corresponding to pores are selected, and for each of the 20 selected locations, the diameter of the opening of the pore is measured. The average value of the measured diameters of the openings of the pores is calculated, and this average value is set as the average opening diameter of the pores on the surface side.

[0153] Furthermore, in the aforementioned back image, 20 locations corresponding to pores were selected, and the diameter of the opening of the pores was measured for each of these 20 selected locations. The average value of the measured diameters of the openings of the pores was calculated, and this average value was set as the average opening diameter of the pores on the back side.

[0154] The center-to-center distance *p* between adjacent conductive paths 22 is further determined in the photographic image of the insulating substrate 20 obtained in the manner described above, identifying the center positions of the determined conductive paths (not shown). The distances between the center positions of adjacent conductive paths were calculated at 10 locations. The average value of this distance is taken as the center-to-center distance *p* between adjacent conductive paths 22. The center position is the center position of the region corresponding to the conductive path 22 in the photographic image described above. Alternatively, known image analysis methods can be used in the calculation of the center position of the region in the photographic image.

[0155] <<Prominent Part>>

[0156] The protrusion is part of a conductive path and is cylindrical. From the viewpoint of increasing the contact area with the joined parts, the protrusion is preferably cylindrical.

[0157] The length h of the protrusion 22a in the thickness direction Dt of the insulating substrate 20 and the length h of the protrusion 22b in the thickness direction Dt of the insulating substrate 20 are preferably 2 nm to 6000 nm, more preferably 5 nm to 3000 nm. If the length h is 10 nm to 1000 nm, it can be well bonded to the component being bonded.

[0158] Regarding the length h of protrusion 22a and the length h of protrusion 22b, the average surface of the surface 20a of the insulating substrate 20 is used as the reference for the length of protrusion 22a.

[0159] If the length h of the protrusions 22a and 22b in the thickness direction Dt of the insulating substrate 20 is 2nm to 6000nm, the height distribution of the bumps on the bonding side has good following performance, and there is no need to require the height accuracy of the bump surface on the bonding side.

[0160] Regarding the lengths h of protrusions 22a and 22b, a 100,000x magnified photographic image of the cross-section along the thickness direction Dt of the insulating substrate 20 was obtained using a field emission scanning electron microscope (FE-SEM). In the photographic image, the line Lc on the surface side and the line Lc on the back side of the insulating substrate were determined as described above.

[0161] Next, in the photographic image, 10 protrusions 22a are selected. Points corresponding to the tops of the 10 selected protrusions 22a are determined. For each of the 10 protrusions 22a, the distance between the point corresponding to the top of the determined protrusion 22a and the line Lc on the surface side of the insulating substrate along the thickness direction Dt of the insulating substrate 20 is calculated. The average value of the above distances to the point corresponding to the top of the 10 protrusions 22a is calculated. This average value is set as the length h of the protrusion 22a.

[0162] Furthermore, in the photographic image, 10 protrusions 22b are selected. Points corresponding to the tops of the 10 selected protrusions 22b are determined. For each of the 10 protrusions 22b, the distance between the point corresponding to the top of the determined protrusion 22b and the line Lc on the back side of the insulating substrate in the thickness direction Dt of the insulating substrate 20 is calculated. The average value of the above distances to the point corresponding to the top of the 10 protrusions 22b is calculated. This average value is set as the length h of the protrusion 22b.

[0163] When the diameter of the protrusion is defined as d and the length of the protrusion in the thickness direction of the insulating substrate is defined as h, the aspect ratio d / h is preferably 0.1 to 20. If the aspect ratio d / h is 0.1 to 20, it can be manufactured stably and the bonding strength is excellent.

[0164] [Resin layer]

[0165] As described above, the resin layer covers at least one of the front and back surfaces of the insulating substrate, protecting the insulating substrate and the conductive path. For example, if the conductive path has a protrusion, the resin layer embeds the protrusion. That is, the resin layer covers the end of the conductive path protruding from the insulating substrate and protects the protrusion.

[0166] To perform the above functions, the resin layer preferably exhibits fluidity in a temperature range of 50°C to 200°C and cures at a temperature above 200°C. The resin layer is, for example, a thermoplastic layer composed of a thermoplastic resin, which will be described in detail later.

[0167] The average thickness hm of the resin layer 24 is preferably 10 μm or less, more preferably 5 μm or less, and even more preferably 1 μm or less. If the average thickness hm of the resin layer 24 is 10 μm or less as described above, it can fully exert the effect of protecting the protrusion of the conductive path 22 and filling the area around the electrode when it is bonded to a connecting object such as a semiconductor device.

[0168] The average thickness hm of the resin layer 24 is the average distance from the surface 20a of the insulating substrate 20 or the average distance from the back surface 20b of the insulating substrate 20. Regarding the average thickness hm of the resin layer 24, the resin layer is cut along the thickness direction Dt of the anisotropic conductive component 10, and a photographic image of the cut cross-section is obtained using a scanning electron microscope. In the photographic image, the line Lc on the surface 20a side and the line Lc on the back surface side of the insulating substrate 20 are determined in the manner described above.

[0169] Next, in the photographic image, 10 locations corresponding to the surface 24a of the resin layer 24 are selected. The distance Lc between the selected location and the surface 20a side of the insulating substrate 20 is calculated for each of the 10 locations. The average value of the distances at the 10 locations is then calculated. This average value is set as the average thickness hm of the resin layer 24 on the surface 20a side of the insulating substrate 20.

[0170] Furthermore, for the resin layer on the back side 20b of the insulating substrate 20, 10 locations corresponding to the surface 24a of the resin layer 24 are selected in the photographic image. The distance between each of the 10 selected locations and the line Lc on the back side 20b of the insulating substrate 20 is calculated. The average value of these 10 distances is then calculated. This average value is set as the average thickness hm of the resin layer 24 on the back side 20b of the insulating substrate 20.

[0171] The resin layer can also use the composition shown below. The composition of the resin layer will be explained below. For example, the resin layer may contain a polymer material or an antioxidant material.

[0172] Specifically, examples of resin materials constituting the resin layer include thermoplastic resins such as ethylene copolymers, polyamide resins, polyester resins, polyurethane resins, polyolefin resins, acrylic resins, acrylonitrile resins, and cellulose resins. Polyacrylonitrile can also be used as a resin material constituting the resin layer. Examples of resin materials constituting the resin layer include epoxy resins, phenolic resins, polyimide resins, melamine resins, and isocyanate resins. Among these, polyimide resins and / or epoxy resins are preferred for reasons of improved insulation reliability and excellent chemical resistance.

[0173] In addition to the above, materials containing a main composition can also be used as the resin layer, for example, which includes an acrylic polymer, an acrylic monomer, and a maleimide compound as described in International Publication No. 2022 / 163260.

[0174] ((The joined parts of anisotropic conductive parts))

[0175] When anisotropic conductive components are used as electronic connection components, the components to be joined, such as semiconductor elements, electrodes, or components having component regions, are examples of components with electrodes. Examples of components with electrodes include semiconductor elements that individually perform a specific function, but also components in which multiple components are aggregated to perform a specific function. Furthermore, components that only transmit electrical signals from wiring components, etc., are also included in components with electrodes.

[0176] The component area is the region where various components that function as electronic components form circuits, etc. Examples of component areas include memory circuits such as flash memory, logic circuits such as microprocessors and FPGAs (field-programmable gate arrays), communication modules such as wireless tags, and wiring. In addition, MEMS (Micro Electro Mechanical Systems) can also be formed in the component area. Examples of MEMS include sensors, actuators, and antennas. Sensors include various sensors such as accelerometers, sound sensors, and light sensors. Regarding light sensors, there are no particular limitations as long as they can detect light; for example, CCD (Charge Coupled Device) image sensors or CMOS (Complementary Metal Oxide Semiconductor) image sensors can be used.

[0177] As described above, components forming circuits are formed in the component region, and electrodes (not shown) are provided to electrically connect the semiconductor chip to the outside. The component region has an electrode region where electrodes are formed. Furthermore, the electrodes in the component region are, for example, Cu pillars. The electrode region essentially refers to the region containing all the formed electrodes. However, if the electrodes are provided separately, the region where each electrode is provided is also called an electrode region.

[0178] The way to connect objects can be a monolithic method like a semiconductor chip, a semiconductor wafer method, or a wiring layer method.

[0179] Furthermore, the anisotropic conductive component is connected to the object to be connected, but the object to be connected is not particularly limited to the aforementioned semiconductor elements, such as semiconductor elements in wafer form, semiconductor elements in chip form, printed circuit boards, and heat sinks.

[0180] ((Semiconductor components))

[0181] In addition to the above, other semiconductor components include logic LSI (Large Scale Integration) (e.g., ASIC (Application Specific Integrated Circuit), FPGA (Field Programmable Gate Array), ASSP (Application Specific Standard Product), etc.), microprocessors (e.g., CPU (Central Processing Unit), GPU (Graphics Processing Unit), etc.), memory (e.g., DRAM (Dynamic Random Access Memory), HMC (Hybrid Memory Cube), MRAM (Magnetic RAM), PCM (Phase Change Memory), ReRAM (Resistive RAM), FeRAM (Ferroelectric RAM), flash memory (NAND flash), etc.), LED (Light Detection and Controlling Electron Devices). Emitting Diode (LED): (e.g., micro flashlights in mobile terminals, automotive applications, projector light sources, LCD backlights, general lighting, etc.), power devices, analog ICs (Integrated Circuits): (e.g., DC-DC converters, insulated-gate bipolar transistors (IGBTs), etc.), MEMS (Micro-Electro-Mechanical Systems): (e.g., accelerometers, pressure sensors, oscillators, gyroscopes, etc.), wireless (e.g.,GPS (Global Positioning System), FM (Frequency Modulation), NFC (Nearfield Communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), discrete components, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, CMOS (Complementary Metal Oxide Semiconductor), passive devices, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, RFIPD (Radio Frequency Integrated Passive Devices), BB (Broadband), etc.

[0182] A semiconductor element can be manufactured as a single unit, and each semiconductor element alone performs a specific function such as a circuit or sensor. The semiconductor element may have an interposer function. Furthermore, multiple devices such as logic chips and memory chips with logic circuits can be stacked on top of a device with an interposer function. In this case, bonding can be achieved even if the electrode dimensions of each device are different.

[0183] (An example of a method for manufacturing an anisotropic conductive component)

[0184] Next, the manufacturing method of the anisotropic conductive component will be explained. Figure 8-14 This is a schematic cross-sectional view illustrating an example of a method for manufacturing an anisotropic conductive component according to an embodiment of the present invention, arranged in the order of process steps. Additionally, in Figure 8-14 In the middle, to and Figure 1-3 Structures with the same structure as the anisotropic conductive component 10 shown are labeled with the same symbols, and their detailed descriptions are omitted.

[0185] In one example of a method for manufacturing anisotropic conductive components, in... Figure 1The anisotropic conductive component 10 shown is illustrated using an example where the insulating substrate 20 is made of an anodized aluminum film. An aluminum substrate is used to form the anodized aluminum film. Therefore, in one example of the manufacturing method of the anisotropic conductive component, firstly, as... Figure 8 As shown, prepare an aluminum substrate 40.

[0186] The aluminum substrate 40 is based on the finally obtained anisotropic conductive component 10 (reference). Figure 1 Insulating substrate 20 (reference) Figure 1 The size and thickness are appropriately determined by factors such as the thickness of the substrate and the processing equipment. The aluminum substrate 40 is, for example, a circular plate. However, it is not limited to an aluminum substrate; a metal substrate capable of forming an electrically insulating film can also be used. Valve metals capable of forming an anodic oxide film through anodizing can also be used.

[0187] Next, the surface 40a on one side of the aluminum substrate 40 (refer to) Figure 8 The aluminum substrate 40 undergoes anodizing treatment. As a result, one side surface 40a (refer to...) of the aluminum substrate 40 is anodized. Figure 8 ) is anodized, thus as Figure 9 An anodized film 44 is formed as shown, having a plurality of fine holes 21 extending along the thickness direction Dt of the aluminum substrate 40.

[0188] The anodic oxide film 44 is the aforementioned insulating substrate 20 (reference). Figure 1 ).like Figure 9 As shown, a barrier layer 43 is present at the bottom of each fine hole 21. The above-described anodizing process is referred to as the anodizing treatment process.

[0189] In the anodic oxide film 44 having multiple pores 21, a barrier layer 43 is present at the bottom of each pore 21 as described above, but the barrier layer 43 is removed. Thus, an anodic oxide film 44 having multiple pores 21 without the barrier layer 43 is obtained (see reference). Figure 10 Furthermore, the process of removing the barrier layer 43 described above is referred to as the barrier layer removal process.

[0190] In the barrier layer removal process, an alkaline aqueous solution containing ions of a metal M1 with a higher hydrogen overvoltage than aluminum is used to remove the barrier layer 43 of the anodic oxide film 44 while simultaneously removing the bottom 42c of the fine pores 21 (refer to...). Figure 10 ) surface 42d (reference) Figure 10 A metal layer 45a (reference) composed of metal (metal M1) is formed on the surface. Figure 10Therefore, the aluminum substrate 40 exposed in the fine hole 21 is covered by a metal layer 45a. This facilitates the electroplating process when filling the fine hole 21 with metal, suppresses incomplete filling of the fine hole with metal, and inhibits the unfilled metal in the fine hole 21, thereby suppressing the conductive path 22 (see reference). Figure 1 The formation of ) is not good.

[0191] In addition, the alkaline aqueous solution containing the ions of the aforementioned metal M1 may also contain aluminum ion-containing compounds (sodium aluminate, aluminum hydroxide, aluminum oxide, etc.). The content of the aluminum ion-containing compound, converted into the amount of aluminum ions, is preferably 0.1 to 20 g / L, more preferably 0.3 to 12 g / L, and even more preferably 0.5 to 6 g / L.

[0192] Next, electroplating is performed on the surface 44a of the anodic oxide film 44 having a plurality of fine holes 21 extending along the thickness direction Dt. At this time, a metal layer 45a can be used as the electrode for electroplating. Metal 45b is used during electroplating to form at the bottom 42c of the fine holes 21 (see reference). Figure 10 ) surface 42d (reference) Figure 10 Electroplating begins with the metal layer 45a on the surface. Thus, as... Figure 11 As shown, metal 45b is filled inside the pores 21 of the anodic oxide film 44 as a conductive material constituting the conductive path 22. A conductive path 22 with conductivity is formed by filling the pores 21 with metal 45b. Furthermore, metal layers 45a and metal 45b are collectively referred to as the filled metal 45.

[0193] The process of filling the multiple pores 21 of the anodic oxide film 44 with metal 45b to form multiple conductive paths 22 is called the metal filling process. As mentioned above, the conductive paths 22 are made of a conductive material and are not limited to filling with metal. Electroplating can be used in the metal filling process, which will be described in detail later. In addition, the surface 44a of the anodic oxide film 44 corresponds to one surface of the insulating substrate 20. The process of filling the multiple pores 21 of the anodic oxide film 44 with metal and conductive material including other substances besides metal to form multiple conductive paths 22 is simply referred to as the filling process.

[0194] After the metal filling process, the following steps are performed: Figure 11 The surface 44a of the anodic oxide film 44 shown is polished to smooth it. For example, CMP (Chemical Mechanical Polishing) can be used in the polishing process.

[0195] Next, after the polishing process, such as Figure 12As shown, a portion of the surface 44a of the anodic oxide film 44 on the side not where the aluminum substrate 40 is located is removed along the thickness direction Dt, so that the metal 45 filled in the metal filling process protrudes more than the surface 44a of the anodic oxide film 44. That is, the conductive path 22 protrudes more than the surface 44a of the anodic oxide film 44. Thus, the protrusion 22a is obtained. The process of making the conductive path 22 protrude more than the surface 44a of the anodic oxide film 44 is called the surface protrusion process.

[0196] Furthermore, in the surface protrusion process, for example, a solution that dissolves the anodic oxide film 44 without dissolving the metal constituting the conductive path 22 is used to dissolve the surface 44a of the anodic oxide film 44. At this time, a spray etching method can be used, in which the dissolved solution is formed into droplets and sprayed onto the surface 44a of the anodic oxide film 44. Thus, a solution can be obtained... Figure 3 The surface 20a of the insulating substrate 20 shown.

[0197] After the surface protrusion process, such as Figure 13 As shown, the aluminum substrate 40 is removed. The process of removing the aluminum substrate 40 is called the substrate removal process. In the case of a structure with only one side protrusion, it is possible to... Figure 13 The component shown is configured as an anisotropic conductive component 10. At this time, it is formed on... Figure 13 The resin layer 24 covering the entire surface of the anodized film 44 protruding from the protrusion 22a in the state shown (reference) Figure 1 ), and set it as an anisotropic conductive component 10.

[0198] Next, as Figure 13 As shown, after the substrate removal process, a polishing process is performed on the surface of the anodized film 44 on the side where the aluminum substrate 40 is disposed, i.e., the back surface 44b of the anodized film 44, to smooth it. For example, CMP processing can be used in the polishing process.

[0199] Next, after the polishing process on the back side 44b of the anodic oxide film 44, as... Figure 14 As shown, a portion of the back side 44b of the anodic oxide film 44 is removed along the thickness direction Dt, making the metal 45 filled in the metal filling process, i.e., the conductive path 22, more prominent than the back side 44b of the anodic oxide film 44. This results in a protrusion 22b. The process that makes the conductive path 22 more prominent than the back side 44b of the anodic oxide film 44 is called the back side protrusion process. However, the back side protrusion process is not always necessary. Without the back side protrusion process, the aforementioned protrusion 22b is not formed.

[0200] Furthermore, in the back-side protrusion process, similar to the surface protrusion process, for example, a solution that dissolves the anodic oxide film 44 without dissolving the metal constituting the conductive path 22 is used to dissolve the back-side 44b of the anodic oxide film 44. At this time, a spray etching method can be used to form the dissolved solution into droplets and spray them onto the back-side 44b of the anodic oxide film 44. Thus, a solution similar to... Figure 3 The insulating substrate 20 shown has the same back side 20b as the surface 20a.

[0201] The aforementioned surface protrusion process and back protrusion process can be implemented in a manner that includes both processes, or in a manner that includes only one of the surface protrusion process and back protrusion process. The surface protrusion process and back protrusion process correspond to "protrusion processes," and both the surface protrusion process and the back protrusion process are protrusion processes. The protrusion process is also referred to as a finishing process.

[0202] When the protrusion process is performed, the thickness of the anodized film 44 after the protrusion process is the same as the thickness of the insulating substrate.

[0203] Next, as Figure 14 As shown, a resin layer 24 (reference) forms the entire surface 44a of the anodized film 44 covering the protrusion 22a. Figure 1 Furthermore, a resin layer 24 is formed covering the entire back surface 44b of the anodized film 44 protruding from the protrusion 22b (see reference). Figure 1 Thus, manufacturing Figure 1 The anisotropic conductive component 10 is shown.

[0204] [Anodizing process]

[0205] Anodizing can be performed using conventionally known methods, but from the viewpoint of improving the orderliness of the micropore arrangement and ensuring the anisotropic conductivity of the structure, self-ordering methods or constant voltage treatment are preferred. Thus, for example, the micropores and conductive pathways are configured in a hexagonal shape.

[0206] Here, the self-ordering method and constant-pressure treatment of the anodizing process can be implemented in accordance with paragraphs

[0056] to

[0108] of Japanese Patent Application Publication No. 2008-270158 and [ Figure 8 The treatments described in the document are the same.

[0207] [Maintaining process]

[0208] In the manufacture of anisotropic conductive components, a holding process may be included. The holding process is a process in which, after the aforementioned anodizing process, a voltage selected from a range of 1V or higher and less than 30% of the voltage in the aforementioned anodizing process is held for a total of 5 minutes or more. In other words, the holding process is a process in which, after the aforementioned anodizing process, an electrolytic treatment is performed for a total of 5 minutes or more at a voltage selected from a range of 1V or higher and less than 30% of the voltage in the aforementioned anodizing process.

[0209] Here, "voltage during anodizing" refers to the voltage applied between the aluminum substrate and the counter electrode. For example, if the electrolysis time for anodizing is 30 minutes, it refers to the average voltage maintained over those 30 minutes.

[0210] From the viewpoint of controlling the thickness of the barrier layer to an appropriate thickness relative to the sidewall thickness of the anodic oxide film, i.e. the depth of the pores, the voltage in the holding process is preferably 5% or more and 25% or less of the voltage in the anodic oxide process, more preferably 5% or more and 20% or less.

[0211] Furthermore, from the perspective of further improving in-plane uniformity, the total holding time in the holding process is preferably 5 minutes or more and 20 minutes or less, more preferably 5 minutes or more and 15 minutes or less, and even more preferably 5 minutes or more and 10 minutes or less.

[0212] Furthermore, the holding time in the holding process only needs to be a total of 5 minutes or more, but it is preferred to be a continuous 5 minutes or more.

[0213] Furthermore, the voltage in the holding process can be set to decrease continuously or in stages from the voltage in the anodizing process to the voltage in the holding process. However, for the sake of further improving in-plane uniformity, it is preferable to set the voltage to 95% or more and 105% of the aforementioned holding voltage within 1 second after the anodizing process ends.

[0214] For example, by lowering the electrolysis potential at the end of the above-mentioned anodizing process, the above-mentioned holding process can also be carried out continuously with the above-mentioned anodizing process.

[0215] In the above-mentioned holding process, the same electrolyte and processing conditions as those in the conventionally known anodizing process can be used, except for the electrolysis potential.

[0216] In particular, when the holding process and the anodizing process are carried out consecutively, it is preferable to use the same electrolyte for treatment.

[0217] In an anodic oxide film having multiple pores (micropores), as described above, a barrier layer (not shown) is present at the bottom of the pores. A barrier layer removal process is provided to remove this barrier layer.

[0218] [Barrier layer removal process]

[0219] The barrier layer removal process is as follows: for example, using an alkaline aqueous solution containing ions of a metal M1 with a higher hydrogen overvoltage than aluminum to remove the barrier layer of the anodic oxide film.

[0220] The barrier layer is removed by the above-mentioned barrier layer removal process, and a conductive layer made of metal M1 is formed at the bottom of the fine hole.

[0221] Here, hydrogen overvoltage refers to the voltage required to produce hydrogen, for example, the hydrogen overvoltage of aluminum (Al) is -1.66V (Journal of the Chemical Society of Japan, 1982, (8), pp. 1305-1313). Furthermore, examples of metals M1 with higher hydrogen overvoltages than aluminum and their hydrogen overvoltage values ​​are shown below.

[0222] <Metal M1 and Hydrogen (1N H2SO4) Overvoltage>

[0223] Platinum (Pt): 0.00V

[0224] Gold (Au): 0.02V

[0225] Silver (Ag): 0.08V

[0226] Nickel (Ni): 0.21V

[0227] Copper (Cu): 0.23V

[0228] Tin (Sn): 0.53V

[0229] Zinc (Zn): 0.70V

[0230] In the aforementioned barrier layer removal process, the barrier layer is removed by using an alkaline aqueous solution containing ions of a metal M1 with a higher hydrogen overvoltage than aluminum. This not only removes the barrier layer 43 but also forms a metal layer 45a of metal M1, which is less prone to generating hydrogen than aluminum, on the aluminum substrate 40 exposed at the bottom of the fine hole 21. As a result, the in-plane uniformity of the metal filling becomes excellent. This is believed to be because the generation of hydrogen caused by the electroplating solution can be suppressed, thus facilitating metal filling via electrolytic plating.

[0231] Furthermore, it was found that in the barrier layer removal process, a holding step is provided, in which the plater holds the plate at a voltage selected from a range less than 30% of the voltage in the anodizing process (holding voltage) for a total of 5 minutes or more, and an alkaline aqueous solution containing ions of metal M1 is used in combination, thereby significantly improving the uniformity of metal filling during the electroplating process. Therefore, having a holding step is preferable.

[0232] While the exact mechanism is not yet clear, it is believed that this is because, in the barrier layer removal process, by using an alkaline aqueous solution containing ions of metal M1 to form a layer of metal M1 under the barrier layer, damage to the interface between the aluminum substrate and the anodic oxide film can be suppressed, thereby improving the uniformity of the barrier layer dissolution.

[0233] In addition, during the barrier layer removal process, a metal layer 45a made of metal (metal M1) is formed at the bottom of the fine hole 21, but it is not limited to this; only the barrier layer 43 is removed to expose the aluminum substrate 40 at the bottom of the fine hole 21. With the aluminum substrate 40 exposed, it can be used as an electrode for electrolytic plating.

[0234] Regarding the fine pores 21, they can also be formed by enlarging the micropore diameter and removing the blocking layer. In this case, a pore size enlargement treatment can be used to enlarge the micropore diameter. The pore size enlargement treatment involves immersing the anodic oxide film in an acidic or alkaline aqueous solution to dissolve the anodic oxide film and enlarge the pore size of the micropores. In the pore size enlargement treatment, aqueous solutions of inorganic acids such as sulfuric acid, phosphoric acid, nitric acid, and hydrochloric acid, or mixtures thereof, or aqueous solutions of sodium hydroxide, potassium hydroxide, and lithium hydroxide can be used.

[0235] In addition, the pore size enlargement process can also remove the barrier layer at the bottom of the micropores by using an aqueous sodium hydroxide solution to enlarge the micropores and remove the barrier layer.

[0236] [Filling process]

[0237] The filling process involves filling the pores of an anolyte film, i.e., an insulating substrate, with a plurality of fine pores extending along its thickness direction with a conductive material to form multiple conductive pathways. These conductive pathways may be, for example, columnar conductors. When metal is used in the filling process, it is called a metal filling process.

[0238] <Metal used in the filling process>

[0239] In the filling process, in order to form a conductive path, the metal filled as a conductive material inside the pores 21 of the anodic oxide film 44 is preferably a metal with a resistivity of 10. 3Materials with an Ω·cm or less. Specific examples of the aforementioned metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), zinc (Zn), and cobalt (Co).

[0240] Furthermore, from the viewpoint of conductivity and formation based on electroplating, copper (Cu), gold (Au), aluminum (Al), nickel (Ni), and cobalt (Co) are preferred as conductive materials, copper (Cu) and gold (Au) are more preferred, and copper (Cu) is even more preferred.

[0241] Electroplating

[0242] As an electroplating method in which metal is filled inside the pores 21 relative to the anodic oxide film 44 having multiple pores 21 extending along the thickness direction Dt, for example, an electrolytic electroplating method or an electroless electroplating method can be used.

[0243] In conventional electroplating methods used in coloring and similar applications, it is difficult to selectively deposit (grow) metal in the pores with a high aspect ratio. This is believed to be because the deposited metal is consumed within the pores, and even after electrolysis for a certain period of time, plating will not grow.

[0244] Therefore, when filling metals using electroplating, a stop time needs to be set during pulse electrolysis or constant potential electrolysis. The stop time needs to be at least 10 seconds, preferably 30 to 60 seconds.

[0245] Furthermore, applying ultrasound is preferred in order to promote the stirring of the electrolyte.

[0246] Furthermore, the electrolysis voltage is typically 20V or less, preferably 10V or less, but it is preferable to pre-determine the deposition potential of the target metal in the electrolyte used, and perform constant potential electrolysis within +1V of that potential. Additionally, when performing constant potential electrolysis, it is preferable to use cyclic voltammetry, and constant potential devices from Solartron, BAS Co., Ltd., HOKUTO DENKO CORPORATION, IVIUM, etc., can be used.

[0247] (Electroplating solution)

[0248] The electroplating solution can use previously known electroplating solutions.

[0249] Specifically, when copper is deposited, an aqueous solution of copper sulfate is typically used, but the concentration of copper sulfate is preferably 1–300 g / L, more preferably 100–200 g / L. Furthermore, adding hydrochloric acid to the electrolyte can promote deposition. In this case, the concentration of hydrochloric acid is preferably 10–20 g / L.

[0250] Furthermore, when gold is deposited, it is preferable to use a sulfuric acid solution of gold tetrachloride and perform electroplating by alternating current electrolysis.

[0251] The electroplating solution preferably contains a surfactant.

[0252] As a surfactant, known surfactants can be used. Sodium lauryl sulfate, a surfactant traditionally added to electroplating solutions, can also be used directly. The hydrophilic portion can be any of ionic (cationic / anionic / amphoteric) or nonionic substances, but from the viewpoint of avoiding the generation of bubbles on the surface of the object to be electroplated, a cationic surfactant is preferred. The concentration of the surfactant in the electroplating solution is preferably 1% by mass or less.

[0253] In addition, in electroless electroplating, it takes a long time to completely fill the pores composed of fine holes with high aspect ratios with metal. Therefore, it is preferable to use electroplating to fill the pores with metal.

[0254] [Substrate Removal Process]

[0255] The substrate removal process is as follows: the aluminum substrate is removed after the filling process. There are no particular limitations on the method for removing the aluminum substrate; for example, a method of removal by dissolution is preferred.

[0256] <Dissolution of Aluminum Substrate>

[0257] Regarding the dissolution of the aforementioned aluminum substrate, it is preferable to use a treatment solution that is difficult to dissolve the anodic oxide film but easy to dissolve aluminum.

[0258] The dissolution rate of this treatment solution for aluminum is preferably 1 μm / min or more, more preferably 3 μm / min or more, and even more preferably 5 μm / min or more. Similarly, the dissolution rate for the anodic oxide film is preferably 0.1 nm / min or less, more preferably 0.05 nm / min or less, and even more preferably 0.01 nm / min or less.

[0259] Specifically, the preferred treatment solution contains at least one metal compound with a lower ionization tendency than aluminum and has a pH of 4 or less or 8 or more, more preferably has a pH of 3 or less or 9 or more, and even more preferably has a pH of 2 or less or 10 or more.

[0260] The preferred treatment liquid for dissolving aluminum is a compound obtained by mixing compounds of, for example, manganese, zinc, chromium, iron, cadmium, cobalt, nickel, tin, lead, antimony, bismuth, copper, mercury, silver, palladium, platinum, gold (e.g., chloroplatinic acid), their fluorides, their chlorides, etc., based on an acidic or alkaline aqueous solution.

[0261] Preferably, it is based on an acidic aqueous solution, and more preferably, it is based on a mixed chloride.

[0262] In particular, from the viewpoint of the scope of treatment, a treatment solution containing mercuric chloride mixed in hydrochloric acid aqueous solution (hydrochloric acid / mercuric chloride) or a treatment solution containing copper chloride mixed in hydrochloric acid aqueous solution (hydrochloric acid / copper chloride) is preferred.

[0263] Furthermore, there are no particular limitations on the composition of the aluminum dissolving solution; for example, a bromine / methanol mixture, a bromine / ethanol mixture, and aqua regia can be used.

[0264] Furthermore, the acid or alkali concentration of the aluminum dissolving solution is preferably 0.01 to 10 mol / L, more preferably 0.05 to 5 mol / L.

[0265] Furthermore, the processing temperature using the aluminum-dissolving solution is preferably -10°C to 80°C, and more preferably 0°C to 60°C.

[0266] Furthermore, the dissolution of the aluminum substrate is achieved by contacting the aluminum substrate after the electroplating process with the aforementioned treatment solution. The contact method is not particularly limited; examples include immersion and spraying. Immersion is preferred. The contact time is preferably 10 seconds to 5 hours, more preferably 1 minute to 3 hours.

[0267] Alternatively, when forming anisotropic conductive components, a support substrate may be provided on the anodic oxide film 44, for example. The support substrate preferably has the same shape as the anodic oxide film 44. By installing the support substrate, the processability of the anodic oxide film 44 is improved when forming anisotropic conductive components.

[0268] [Key Processes]

[0269] The protrusion process is as follows: after the polishing process, the conductive path protrudes from at least one of the two sides of the insulating substrate.

[0270] In a specific example, a portion of the aforementioned anodic oxide film 44 is removed. When removing a portion of the anodic oxide film 44, an acidic or alkaline aqueous solution can be used, for example, to dissolve the anodic oxide film 44, i.e., aluminum oxide (Al₂O₃), without dissolving the metal constituting the conductive path 22. This is achieved by forming the acidic or alkaline aqueous solution into droplets and contacting them with the anodic oxide film 44, which has fine pores 21 filled with metal. As a method for forming the acidic or alkaline aqueous solution into droplets and contacting them with the anodic oxide film 44, a spray etching method can be used, as described above, where the dissolved solution is formed into droplets and sprayed onto the insulating substrate, i.e., the anodic oxide film 44.

[0271] When using acidic aqueous solutions, aqueous solutions of inorganic acids such as sulfuric acid, phosphoric acid, nitric acid, and hydrochloric acid, or mixtures thereof, are preferred. From the viewpoint of superior safety, aqueous solutions free of chromic acid are preferred. The concentration of the acidic aqueous solution is preferably 1 to 10% by mass. The temperature of the acidic aqueous solution is preferably 25 to 60°C.

[0272] Furthermore, when using an alkaline aqueous solution, it is preferable to use an aqueous solution of at least one alkali selected from the group consisting of sodium hydroxide, potassium hydroxide, and lithium hydroxide. The concentration of the alkaline aqueous solution is preferably 0.1% to 5% by mass. The temperature of the alkaline aqueous solution is preferably 20 to 35°C.

[0273] Specifically, for example, a 50 g / L phosphoric acid aqueous solution at 40°C, a 0.5 g / L sodium hydroxide aqueous solution at 30°C, or a 0.5 g / L potassium hydroxide aqueous solution at 30°C can be preferably used.

[0274] The immersion time in acidic or alkaline aqueous solutions is preferably 8 to 120 minutes, more preferably 10 to 90 minutes, and even more preferably 15 to 60 minutes. Here, when repeated short immersion treatments are performed, the immersion time refers to the total of all immersion times. Furthermore, a washing treatment can be performed between each immersion treatment.

[0275] Furthermore, regarding the degree to which the metal 45, i.e., the conductive path 22, protrudes more than the surface 44a or the back surface 44b of the anodic oxide film 44, it is preferable that the conductive path 22 protrudes 10 nm to 1000 nm more than the surface 44a or the back surface 44b of the anodic oxide film 44, as described above. That is, in order to achieve good adhesion with the joined component, the length h of the protrusion 22a in the thickness direction Dt is preferably 10 nm to 1000 nm, more preferably 50 nm to 500 nm.

[0276] Under the condition of strictly controlling the length h of the protrusion of the conductive path 22 in the thickness direction Dt, it is preferable to fill the inside of the fine hole 21 with a conductive material such as metal, process the ends of the anodic oxide film 44 and the conductive material such as metal into the same plane, and then selectively remove the insulating substrate such as the anodic oxide film.

[0277] Furthermore, after the aforementioned metal filling or after the protrusion process, a heat treatment can be performed to reduce the strain within the conductive path 22 generated during the metal filling.

[0278] Regarding heat treatment, from the viewpoint of suppressing metal oxidation, it is preferable to carry out the process in a reducing environment. Specifically, it is preferable to carry out the process in an environment with an oxygen concentration of 20 Pa or less, and more preferably in a vacuum. Here, a vacuum refers to a space where at least one of the gas density and pressure is lower than that of the atmosphere.

[0279] Furthermore, regarding the heat treatment, in order to correct the problem, it is preferable to perform the heat treatment while applying stress to the anodic oxide film 44.

[0280] [The process of forming the resin layer]

[0281] In the process of forming the resin layer 18, methods such as inkjet printing, transfer printing, spray printing, or screen printing can be used. In inkjet printing, the resin layer 18 is formed directly onto the insulating substrate 20, thus simplifying the resin layer 18 formation process, and is therefore preferred. Furthermore, the resin layer 18 can be formed using, for example, conventionally known surface protectant tape application apparatus and laminators. In the resin layer formation process, the resin layer is formed on the entire surface of the insulating substrate. The resin material constituting the resin layer 18 is as described above.

[0282] In addition to the methods described above, other methods for forming the resin layer 18 may include: applying a resin composition containing antioxidants, polymers, solvents (e.g., methyl ethyl ketones, etc.) to the entire surface of an insulating substrate and drying it, followed by calcination as needed.

[0283] There are no particular limitations on the coating method of the resin composition. For example, conventionally known coating methods such as gravure coating, reverse coating, mold coating, doctor blade coating, roller coating, air knife coating, screen coating, rod coating, and curtain coating can be used.

[0284] Furthermore, there are no particular limitations on the drying method after coating. For example, it can be heated at a temperature of 0℃ to 100℃ under atmospheric conditions for a few seconds to tens of minutes, or heated at a temperature of 0℃ to 80℃ under reduced pressure for a dozen minutes to several hours.

[0285] Furthermore, the calcination method after drying varies depending on the polymer material used, and therefore is not particularly limited. When using polyimide resin, for example, a treatment of heating at a temperature of 160°C to 240°C for 2 to 60 minutes can be given. When using epoxy resin, for example, a treatment of heating at a temperature of 30°C to 80°C for 2 to 60 minutes can be given.

[0286] The present invention is basically constructed as described above. The anisotropic conductive components and connectors of the present invention have been described in detail above, but the present invention is not limited to the above embodiments, and various modifications or alterations can be made without departing from the spirit of the present invention.

[0287] Example

[0288] The following examples illustrate the features of the present invention in more detail. Regarding the materials, reagents, quantities, proportions, and operations shown in the following examples, appropriate modifications can be made without departing from the spirit of the invention. Therefore, the scope of the present invention is not limited to the following examples.

[0289] In this embodiment, the joints of Examples 1 to 12 and the joints of Comparative Examples 1 and 2 were fabricated. The dimensions of the joints of Examples 1 to 12 and the joints of Comparative Examples 1 and 2 are shown in Table 1 below.

[0290] Regarding the joints of Examples 1 to 12, as well as the joints of Comparative Examples 1 and 2, the joint strength and the condition of the protrusions after joining were evaluated. The evaluation results of the joint strength and the condition of the protrusions after joining are shown in Table 2 below.

[0291] Next, the joint strength and the condition of the protrusion after jointing will be explained.

[0292] (Evaluation of Bond Strength)

[0293] Regarding the bonding strength, the shear strength of the TEG chip and the anisotropic conductive component and the interlayer of each embodiment and comparative example was measured and evaluated using a Stellar4000 bonding tester (manufactured by Nordson Advanced Technology K.K.).

[0294] Regarding the bonding strength, the bonding strength per unit area (MPa) of the TEG chip was determined based on the obtained destructive load. The bonding strength was evaluated according to the evaluation criteria shown below. The evaluation results are shown in the bonding strength column of Table 2 below.

[0295] Evaluation Criteria

[0296] A: 10MPa ≤ Bond strength value

[0297] B: 3MPa ≤ Bond strength value < 10MPa

[0298] C: Bond strength value <3MPa

[0299] <Evaluation of the fabrication of the joint>

[0300] A TEG (Test Element Group) chip with Cu pads and an interposer were prepared. The insulating layer was SiN. The step difference between the insulating layer and the Cu pad surface was 1 μm. For the TEG chip, a chip with an 8 mm square size and an electrode area (copper pillar) to chip area ratio of 25% was prepared. For the interposer, a 10 mm square size was prepared due to the presence of lead-out wiring. Anisotropic conductive components were also prepared using 10 mm square components.

[0301] In addition, during bonding, the TEG chip, anisotropic conductive components and an interlayer were stacked in sequence, and temporary bonding was performed using a room temperature bonding device (WP-100 (model), manufactured by PMT CORPORATION) under the conditions of a temporary bonding step with a heating temperature of 80°C, a time of 1 minute and a pressure of 10 MPa.

[0302] Next, for the temporarily bonded samples, a room temperature bonding device (WP-100 (model), manufactured by PMTCORPORATION) was used to pressurize the samples at a pressure of 10 MPa, followed by formal bonding at a heating temperature of 140°C for 10 seconds.

[0303] Next, for the formally bonded sample, the resin layer was cured under the conditions of a resin curing step at a heating temperature of 250°C for 180 seconds and a pressure of 10 MPa, thereby producing an evaluation bond.

[0304] The stacked structure consisting of a TEG chip, an anisotropic conductive component, and an interlayer is designated as a Type 1 stacked structure.

[0305] Furthermore, the TEG chip, anisotropic conductive component, TEG chip, anisotropic conductive component and interlayer were stacked in sequence, and temporary bonding was performed using a room temperature bonding device (WP-100 (model), manufactured by PMT CORPORATION) as described above, under the conditions of a temporary bonding step with a heating temperature of 80°C, a time of 1 minute and a pressure of 10 MPa.

[0306] Next, for the temporarily bonded samples, a room-temperature bonding apparatus (WP-100, manufactured by PMTCORPORATION) was used. After pressurization at 10 MPa, formal bonding was performed at a heating temperature of 140°C for 10 seconds. Then, for the formally bonded samples, the resin layer was cured under a resin curing step at a heating temperature of 250°C for 180 seconds and a pressure of 10 MPa, thereby producing an evaluation bond.

[0307] The stacked structure consisting of a TEG chip, an anisotropic conductive component, another TEG chip, another anisotropic conductive component, and an intermediate layer is designated as a type 2 stacked structure.

[0308] (The state of the protrusion after joining)

[0309] The condition of the protrusion after joining is described.

[0310] For the TEG chip and the junction of the anisotropic conductive component and the interlayer in each embodiment and comparative example, the anodic oxide film was machined along the thickness direction using a focused ion beam (FIB).

[0311] Next, a field emission scanning electron microscope (S-4800 model manufactured by Hitachi High-Technologies Corporation) was used to obtain photographic images at a magnification of 100,000x.

[0312] In the acquired photographic images, 100 locations corresponding to the protrusions were identified. For each of these 100 identified protrusions, it was determined whether or not they were in contact with adjacent protrusions. Based on the presence or absence of contact with adjacent protrusions, the condition of the joined protrusions was evaluated according to the evaluation criteria shown below. The evaluation results are shown in the "State of Joined Protrusions" column of Table 1 below. Furthermore, the state of the joined protrusions serves as an indicator for evaluating the degree of protrusion buckling.

[0313] Evaluation Criteria

[0314] A: Of the 100 protrusions, the number of protrusions in contact with adjacent protrusions is 0.

[0315] B: Among 100 protrusions, the number of protrusions in contact with adjacent protrusions is more than one and less than ten.

[0316] C: Among 100 protrusions, the number of protrusions in contact with adjacent protrusions is 11 or more.

[0317] In addition, regarding whether there is contact with adjacent protrusions, contact is determined as long as there is partial contact with adjacent protrusions.

[0318] Hereinafter, Examples 1 to 12, as well as Comparative Examples 1 and 2, will be described.

[0319] (Example 1)

[0320] The assembly of Example 1 will be described. In Example 1, an anodized film of aluminum was used on an insulating substrate.

[0321] [Structure]

[0322] <Fabrication of Aluminum Substrates>

[0323] Molten metal was prepared using an aluminum alloy containing 0.06 wt% Si, 0.30 wt% Fe, 0.005 wt% Cu, 0.001 wt% Mn, 0.001 wt% Mg, 0.001 wt% Zn, 0.001 wt% Ti, with the remainder being Al and unavoidable impurities. After molten metal processing and filtration, ingots with a thickness of 500 mm and a width of 1200 mm were produced by DC (Direct Chill) casting.

[0324] Next, the surface is cut to an average thickness of 10 mm using a face cutting machine, and then held at 550°C for about 5 hours and cooled to 400°C before being rolled into a 2.7 mm thick roll using a hot rolling mill.

[0325] Furthermore, after heat treatment at 500°C using a continuous annealing machine, the aluminum substrate of JIS1050 material is obtained by cold rolling to a thickness of 1.0 mm.

[0326] After the aluminum substrate was formed into a wafer with a diameter of 200 mm (8 inches), the following processes were performed.

[0327] <Electropolishing Treatment>

[0328] The aluminum substrate was electropolished using an electropolishing solution with the following composition under conditions of 25V voltage, 65℃ liquid temperature, and 3.0m / min liquid flow rate.

[0329] The cathode was set as a carbon electrode, and the power supply used was a GP0110-30R (manufactured by TAKASAG0LTD.). Furthermore, the electrolyte flow rate was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

[0330] (Composition of electrolytic polishing solution)

[0331] • 85% phosphoric acid (a reagent manufactured by FUJIFILM Wako Pure Chemical Corporation) 660 mL

[0332] 160mL of pure water

[0333] 150 mL of sulfuric acid

[0334] 30 mL of ethylene glycol

[0335] <Anodizing Process>

[0336] Next, following the steps described in Japanese Patent Application Publication No. 2007-204802, anodizing based on a self-ordering method was performed on the aluminum substrate after electropolishing.

[0337] An aluminum substrate that had undergone electropolishing was subjected to a pre-anodization treatment for 5 hours using an electrolyte of 0.50 mol / L oxalic acid at a voltage of 40 V, a liquid temperature of 16 °C, and a liquid flow rate of 3.0 m / min.

[0338] Then, a demolding process was carried out by immersing the pre-anodized aluminum substrate in a mixed aqueous solution of 0.2 mol / L chromic anhydride and 0.6 mol / L phosphoric acid (liquid temperature: 50°C) for 12 hours.

[0339] Then, a re-anodic oxidation treatment was carried out for 10 hours using an electrolyte of 0.50 mol / L oxalic acid at a voltage of 40 V, a liquid temperature of 16 °C, and a liquid flow rate of 3.0 m / min, thereby obtaining an anodic oxide film with a thickness of 80 μm.

[0340] Furthermore, both the pre-anodizing and re-anodizing processes used stainless steel electrodes as cathodes, and the power supply was a GP0110-30R (manufactured by TAKASAGO LTD.). The cooling device was a NeoCool BD36 (manufactured by Yamato Scientific Co., Ltd.), and the stirring and heating device used a pair of PS-100 stirrers (manufactured by TOKYO RIKAKIKAIC0, LTD.). The electrolyte flow rate was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

[0341] <Barrier Layer Removal Process>

[0342] Next, under the same treatment solution and conditions as the above-mentioned anodizing treatment, an electrolytic treatment (electrolytic removal treatment) was performed while the voltage was continuously reduced from 40V to 0V at a rate of 0.2V / second.

[0343] Then, an etching process (etching removal process) is performed, in which the aluminum is immersed in 5% phosphoric acid at 30°C for 30 minutes to remove the barrier layer at the bottom of the micropores of the anodic oxide film, so that the aluminum is exposed through the micropores.

[0344] Here, the average opening diameter of the micropores present in the anolyte film after the barrier layer removal process is 60 nm. Furthermore, regarding the average opening diameter, a surface image at 50,000x magnification was obtained using field emission scanning electron microscopy (FE-SEM). Fifty locations corresponding to micropores were selected from the surface image, and the diameter of the corresponding opening portion was measured for each of these 50 selected locations. The average value of the measured diameters corresponding to the micropore openings was calculated. This average value was set as the average opening diameter.

[0345] Furthermore, the average thickness of the anodic oxide film after the barrier layer removal process was 80 μm. Regarding the average thickness, the anodic oxide film was machined along its thickness direction using focused ion beam (FIB), and a cross-sectional image at 50,000x magnification was obtained using field emission scanning electron microscopy (FE-SEM). In the cross-sectional image, the lengths of portions corresponding to the thickness of the anodic oxide film were measured at 10 locations, and the average length of these 10 locations was calculated. This average value was set as the average thickness of the anodic oxide film after the barrier layer removal process.

[0346] Furthermore, the density of micropores in the anodic oxide film is approximately 100 million per mm. 2 Furthermore, the density of the micropores was measured and calculated using the method described in paragraphs

[0168] and

[0169] of Japanese Patent Application Publication No. 2008-270158.

[0347] Furthermore, the degree of order of the micropores present in the anodic oxide film is 92%. In addition, regarding the degree of order, a surface image at a magnification of 20,000 was obtained using a field emission scanning electron microscope (FE-SEM), and the result was measured and calculated using the method described in paragraphs

[0024] to

[0027] of Japanese Patent Application Publication No. 2008-270158.

[0348] <Metal Filling Process>

[0349] Next, an aluminum substrate was used as the cathode and platinum as the positive electrode, and an electroplating process was performed.

[0350] Specifically, constant current electrolysis was performed using a copper plating solution with the composition shown below, thereby creating a metal-filled microstructure in which copper is filled inside fine pores (micropores) to form a conductive path.

[0351] Here, regarding constant current electrolysis, an electroplating apparatus manufactured by YAMAMOTO-MS C0., LTD. was used, and a power supply (HZ-3000) manufactured by HOKUTO DENKO CORPORATION was used. After confirming the deposition potential by cyclic voltammetry in the electroplating solution, the treatment was carried out under the conditions shown below.

[0352] (Composition and conditions of copper plating solution)

[0353] Copper sulfate 100g / L

[0354] · Sulfuric acid 50g / L

[0355] · Hydrochloric acid 15g / L

[0356] Temperature 25℃

[0357] • Current density 10A / dm 2

[0358] Polishing process

[0359] Next, CMP treatment was performed on the surface of the metal-filled microstructures that form conductive pathways, and the surface was polished to a depth of 5 μm to smooth the surface. PNANERLITE-7000 manufactured by Fujimi Incorporated was used as the CMP slurry.

[0360] The surface of the anodic oxide film after filling the pores (micropores) with metal was observed using field emission scanning electron microscopy (FE-SEM). The presence of metal-based sealing in 1000 micropores was observed, and the sealing rate (number of sealed micropores / 1000) was calculated, which was 96%.

[0361] Furthermore, the anodic oxide film after filling the micropores with metal was machined along the thickness direction using FIB, and the cross-section was obtained at 50,000x magnification using field emission scanning electron microscopy (FE-SEM) to confirm the interior of the micropores. The results confirmed that the interior of the sealed micropores was completely filled with metal.

[0362] <Trimming Process>

[0363] For the metal-filled microstructures after polishing, a spray etching method is used. Sodium hydroxide aqueous solution (concentration: 5% by mass, liquid temperature: 20°C) is formed into droplets and sprayed onto the surface of the anodic oxide film. This is to achieve the arithmetic mean distance δ (reference) in the thickness direction. Figure 3 The spray volume of sodium oxide aqueous solution was adjusted to 100 nm to selectively dissolve the surface of the aluminum anodic oxide film, followed by washing and drying to allow the copper cylinder, serving as a conductive path, to protrude. As a result, the length h of the protrusion (refer to...) Figure 1 The wavelength is 300nm.

[0364] Regarding the spray etching method, the ADE-3000S (product name) manufactured by ActesKyosan inc. was used.

[0365] Regarding the arithmetic mean distance δ in the thickness direction on the surface side of the anodic oxide film (reference) Figure 3 The measurements were performed using photographic images in the manner described above.

[0366] <Substrate Removal Process>

[0367] Next, the structure was fabricated by immersing it in a 20% by mass aqueous solution of mercuric chloride (mercuric chloride) at 20°C for 3 hours to dissolve and remove the aluminum substrate.

[0368] Polishing process

[0369] Next, CMP treatment was performed on the back side of the anodized film formed on the aluminum substrate after removing the structure, in order to smooth the metal-filled microstructures. PNANERLITE-7000 manufactured by Fujimi Incorporated was used as the CMP paste.

[0370] <Trimming Process>

[0371] Following the polishing process, a spray etching method is used to form a sodium hydroxide aqueous solution (concentration: 5% by mass, liquid temperature: 20°C) into droplets and spray them onto the back side of the anodic oxide film of the structure. This is done to ensure that the arithmetic mean distance δ in the aforementioned thickness direction (reference) is... Figure 3 The spray volume of sodium oxide aqueous solution was adjusted to 100 nm to selectively dissolve the surface of the aluminum anodic oxide film, followed by washing and drying to allow the copper cylinder, serving as a conductive path, to protrude. As a result, the length h of the protrusion (refer to...) Figure 1 The wavelength is 300nm.

[0372] Regarding the spray etching method, the ADE-3000S (product name) manufactured by ActesKyosan inc. was used.

[0373] The arithmetic mean distance δ in the thickness direction on the back side of the anodic oxide film was measured using photographic images in the manner described above.

[0374] <Resin Layer Formation Process>

[0375] For the structure after the finishing process, resin layers are formed on the surface and back of the anodic oxide film using the method shown below, thereby creating an anisotropic conductive component.

[0376] Regarding the resin layer, a resin composition containing a non-conductive epoxy thermosetting resin (BST001A, curing temperature 150°C, manufactured by NAMICS CORPORATION) and diethylene glycol diethyl ether as a diluent is used to form the layer by adjusting the spin coater speed to achieve a thickness of 1.5 μm.

[0377] Next, the fabricated anisotropic conductive component was cut into 10mm square pieces. The DAD3230 (product name) manufactured by DISCO Corporation was used for cutting the anisotropic conductive component.

[0378] The arithmetic mean distance δ is calculated as follows.

[0379] The fabricated anisotropic conductive component is machined using a focused ion beam (FIB) to expose the cross-section in the thickness direction of the anodic oxide film, which serves as an insulating substrate.

[0380] Next, a 150k magnification image of the cross section in the thickness direction of the anodic oxide film was obtained using field emission scanning electron microscopy (FE-SEM).

[0381] In the photographic image, a reference point Pb (reference point) is set at any position on the back side 20b of the insulating substrate 20, opposite to the surface 20a. Figure 3 A baseline Ls (reference) was established that is parallel to the direction x passing through the reference point Pb. Figure 3 ).

[0382] Next, in the photographic image, in relation to the top Pc (reference) Figure 3 Ten top Pc points were selected from the corresponding points in descending order relative to the baseline Ls. Furthermore, at the contact point Vc (reference... Figure 3 Ten contact points Vc were selected from the corresponding points in ascending order relative to the baseline Ls.

[0383] In the photographic image, the distances to the baseline Ls were calculated for each of the 10 selected top Pc points. The average of the 10 distances between the 10 top Pc points and the baseline Ls was calculated using the least squares method. The average values ​​calculated using the least squares method are represented as points in the photographic image. A line Lc (reference) parallel to the direction x passing through the point representing the average value of the top Pc points was calculated. Figure 3 ).

[0384] In the photographic image, the distances from the baseline Ls to the points corresponding to the 10 selected contact points Vc were calculated. The average of the 10 distances between the points corresponding to the 10 contact points Vc and the baseline Ls was calculated using the least squares method. The average values ​​calculated using the least squares method are presented as points in the photographic image. A line Lb (reference) parallel to the direction x passing through the point representing the average value of the contact points Vc was calculated. Figure 3 ).

[0385] Next, the distance between the parallel lines Lc and Lb along the thickness direction Dt is calculated, thus obtaining the arithmetic mean distance δ.

[0386] (Example 2)

[0387] Compared with Example 1, Example 2 differs in the following way: the arithmetic mean distance δ (reference) between the surface side and the back side of the anodic oxide film in the aforementioned thickness direction is made... Figure 3 The amount of sodium oxide aqueous solution sprayed was adjusted to 20 nm to selectively dissolve the surface and back of the anodic oxide film on aluminum. Otherwise, it was the same as in Example 1.

[0388] (Example 3)

[0389] Compared with Example 1, Example 3 differs in the following way: the arithmetic mean distance δ (reference) between the surface side and the back side of the anodic oxide film in the aforementioned thickness direction is made... Figure 3 The amount of sodium oxide aqueous solution sprayed was adjusted to 60 nm to selectively dissolve the surface and back of the anodic oxide film on aluminum. Otherwise, it was the same as in Example 1.

[0390] (Example 4)

[0391] Compared with Example 1, Example 4 differs in the following way: the arithmetic mean distance δ (reference) between the surface side and the back side of the anodic oxide film in the aforementioned thickness direction is made... Figure 1 The amount of sodium oxide aqueous solution sprayed was adjusted to 5 nm to selectively dissolve the surface and back of the anodic oxide film on aluminum. Otherwise, it was the same as in Example 1.

[0392] (Example 5)

[0393] The difference between Example 3 and Example 5 is that the resin is located on the CNP surface; otherwise, it is the same as Example 2. Furthermore, "resin located on the CNP surface" refers to the state where epoxy resin is coated on the protrusion of the anisotropic conductive component.

[0394] (Example 6)

[0395] The difference between Example 6 and Example 3 is that the resin is located on the electrode surface; otherwise, it is the same as Example 2. Furthermore, "resin located on the electrode surface" refers to the state where epoxy resin is coated on the Cu pad surface of the TEG chip.

[0396] (Example 7)

[0397] The difference between Example 7 and Example 2 is that the conductive path is made of Ni; otherwise, they are the same as Example 2.

[0398] Regarding the conductive path, a mixed solution of nickel sulfate / nickel chloride / boric acid = 300 / 60 / 40 (g / L) was used as the electrolyte. The nickel electrode was used as the cathode and platinum as the anode, and the path was formed through electrolytic plating. During the electrolytic plating process, the electrolyte was maintained at 50°C and constant current electrolysis (5 A / dm³) was performed. 2 ).

[0399] (Example 8)

[0400] Compared with Example 2, Example 8 differs in that the length h of the aforementioned protrusion (referencing Example 8) is... Figure 1 The wavelength was set to 10000 nm, otherwise it was the same as in Example 2.

[0401] (Example 9)

[0402] Compared to Example 2, Example 9 differs in that the length h of the aforementioned protrusion (referencing Example 9) is... Figure 3 The wavelength was set to 3nm, otherwise it was the same as in Example 2.

[0403] (Example 10)

[0404] Compared with Example 3, Example 10 differs in that the size of the TEG chip is set to 4mm square; otherwise, it is the same as Example 3.

[0405] (Example 11)

[0406] Compared with Example 3, Example 11 differs in that the size of the anisotropic conductive component is set to 8 mm square; otherwise, it is the same as Example 3.

[0407] (Example 12)

[0408] Compared with Example 3, Example 12 differs in that it uses a Type 2 stacked structure in which a TEG chip, an anisotropic conductive component, a TEG chip, an anisotropic conductive component and an interposer are stacked in sequence, and the size of the anisotropic conductive component is set to 8 mm square. Otherwise, it is the same as Example 3.

[0409] (Comparative Example 1)

[0410] Compared to Example 1, Comparative Example 1 differs in that it uses an immersion method instead of a spray etching method to perform any of the above-mentioned finishing processes. Furthermore, Comparative Example 1 differs in that, for the temporarily bonded samples, a room-temperature bonding apparatus (WP-100, manufactured by PMT CORPORATION) was used, pressurized at 10 MPa, and then formally bonded at a heating temperature of 120°C for 10 seconds. Otherwise, it is the same as Example 1.

[0411] Furthermore, in Comparative Example 1, the arithmetic mean distance δ in the thickness direction (reference) Figure 3 The value is 1nm.

[0412] (Comparative Example 2)

[0413] Compared with Example 1, Comparative Example 2 differs in that the arithmetic mean distance δ (referring to the thickness direction) between the surface side and the back side of the anodic oxide film in the aforementioned thickness direction is made larger. ​ The amount of sodium oxide aqueous solution sprayed was adjusted to 250 nm to selectively dissolve the surface and back of the anodic oxide film on aluminum. Otherwise, it was the same as in Example 1.

[0414] [Table 1]

[0415]

[0416] [Table 2]

[0417]

[0418] As shown in Table 2, compared with Comparative Example 1 and Comparative Example 2, the bonding strength and the condition of the protrusions after bonding in Examples 1 to 12 are good.

[0419] In Comparative Example 1, the arithmetic mean distance δ is short, the joint strength is low, and there are more protrusions in contact with adjacent protrusions.

[0420] In Comparative Example 2, the arithmetic mean distance δ is longer, and there are more protrusions in contact with adjacent protrusions.

[0421] According to Examples 1 to 12, Examples 2, 3, 5, 6, 10, and 11 show superior bonding strength and the condition of the protrusions after bonding.

[0422] According to Examples 1 to 4, when the arithmetic mean distance δ is 20 to 100 nm, the bonding strength and the state of the protrusion after bonding are better, and when the arithmetic mean distance δ is 20 to 60 nm, the bonding strength and the state of the protrusion after bonding are even better.

[0423] According to Examples 2 and 7, when the conductive path is made of Cu, the bonding strength and the condition of the protrusion after bonding are superior compared to the case where the conductive path is made of Ni.

[0424] According to Examples 2, 8 and 9, the bonding strength and the state of the bonding protrusion of Example 2, with a protrusion of 300 nm, are superior.

[0425] Symbol Explanation

[0426] 10 - Anisotropic conductive component; 12, 13 - Connector; 18 - Resin layer; 20 - Insulating substrate; 20a, 24a, 40a, 32a, 34a, 37a, 44a - Surface; 20b, 44b - Back side; 20d - Recess; 21 - Micropore; 22 - Conductive path; 22a, 22b - Protrusion; 22c - Side side; 24 - Resin layer; 30, 31 - Semiconductor element; 32, 37 - Element substrate; 33 - Resin layer. 34, 35, 38 - Electrodes; 36, 39 - Insulating layers; 40 - Aluminum substrate; 42c - Bottom; 42d - Surface; 43 - Barrier layer; 44 - Anodized film; 45, 45b - Metal; 45a - Metal layer; Dt - Thickness direction; Ls - Reference line; Pb - Reference point; Pc - Top; Vc - Contact; d - Average diameter; hm - Average thickness; ht - Thickness; p - Center-to-center distance; x - Direction; δ - Arithmetic mean distance; w - Spacing.

Claims

1. An anisotropic conductive component, comprising: Insulating substrate with electrical insulation properties; and Multiple conductive paths are provided that extend through the thickness direction of the insulating substrate, are electrically insulated from each other, and have protrusions extending from at least one side of the insulating substrate. In a cross-section along the thickness direction of the insulating substrate, the protrusions of the conductive pathway protrude from the surface of the insulating substrate and have multiple tops and contact portions where the multiple protrusions respectively contact the insulating substrate. The arithmetic mean distance between the plurality of contact portions and the plurality of top portions in the thickness direction is 2 nm to 200 nm. The conductive path is composed of Cu, Au, or Al. When the diameter of the protrusion is set as d and the length of the protrusion in the thickness direction of the insulating substrate is set as h, d / h is 0.1 to 20. The length of the protrusion in the thickness direction of the insulating substrate is 6 nm to 6000 nm.

2. A joint body formed by joining an anisotropic conductive component and a component to be joined. Resin is filled between the anisotropic conductive component and the joined component. The anisotropic conductive component has: Insulating substrate with electrical insulation properties; and Multiple conductive paths are provided that extend through the thickness direction of the insulating substrate, are electrically insulated from each other, and have protrusions extending from at least one side of the insulating substrate. In a cross-section along the thickness direction of the insulating substrate, the protrusions of the conductive pathway protrude from the surface of the insulating substrate and have multiple tops and contact portions where the multiple protrusions respectively contact the insulating substrate. The arithmetic mean distance between the plurality of contact portions and the plurality of top portions in the thickness direction is 2 nm to 200 nm. The conductive path is composed of Cu, Au, or Al. When the diameter of the protrusion is set as d and the length of the protrusion in the thickness direction of the insulating substrate is set as h, d / h is 0.1 to 20. The length of the protrusion in the thickness direction of the insulating substrate is 6 nm to 6000 nm.

3. The joint according to claim 2, wherein, The joined components have a metal layer and a resin layer, with the metal layer exposed from the resin layer.

4. The joint according to claim 3, wherein, The joined component has a plurality of metal layers, at least one of which has a different height.

5. The joint according to claim 3, wherein, The joined component has a joining surface with multiple metal layers, the area of ​​which is wider than the area of ​​the surface protruding from the protrusion of the anisotropic conductive component.

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