Gas distribution device and semiconductor process equipment

Abstract

The invention discloses a gas distribution device and semiconductor process equipment, and relates to the field of semiconductors. A gas distribution device comprises a distribution body, and the distribution body is provided with a gas inlet channel, a gas extraction channel and a plurality of gas transmission channels; the air inlet channel communicates with the multiple air conveying channels through multiple air inlet holes distributed in the first direction. The air exhaust channel is respectively communicated with the plurality of air transmission channels through the plurality of air exhaust holes; an air inlet port is formed in the wall face of the air inlet channel and located between the two ends of the air inlet channel. An air exhaust port is formed in the wall surface of the air exhaust channel; a plurality of air outlet ports distributed in the second direction are formed in the wall surface of each air conveying channel; the gas distribution device provides gas for the reaction chamber through the gas outlet port. The problem that the uniformity of the thin film is low can be at least solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a gas distribution device and semiconductor process equipment. Background Art

[0002] Integrated circuit film deposition processes primarily include physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). PVD involves physically vaporizing a material source (solid or liquid surface) into gaseous atoms, molecules, or partially ionized ions under vacuum conditions. This process then deposits a thin film with specific properties on a substrate through a low-pressure gas process. PVD can deposit not only metal and alloy films, but also compounds and polymers. Chemical vapor deposition primarily utilizes one or more gaseous compounds or elements containing the film-forming elements to chemically react on the substrate surface to form thin films. ALD is a widely used growth technique for various nano-thin films. Its hallmark is its ability to undergo continuous, self-limiting surface half-reactions, enabling the deposition of uniform, precisely controllable films on substrates with high aspect ratios.

[0003] Atomic layer deposition (ALD) is a thin film deposition method that involves alternately circulating different gaseous precursors into a high-temperature vacuum chamber. The different precursors then adsorb onto the surface of a wafer substrate, ultimately forming a deposited film through a reaction between the precursors. Because this thin film deposition method involves a reaction between two precursors, the two precursors must be isolated when entering the gas distribution plate. Furthermore, the gaseous precursors must be evenly distributed across the wafer substrate surface upon entering the chamber. Furthermore, the precursors must quickly reach the wafer substrate surface, and excess precursors and byproducts must be rapidly expelled from the reaction chamber. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a gas distribution device and semiconductor process equipment that can at least solve the problem of low film uniformity.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] An embodiment of the present application provides a gas distribution device for supplying gas to a reaction chamber, the gas distribution device comprising: a distribution body, the distribution body being provided with: an inlet channel extending along a first direction, gas extraction channels located on both sides of the inlet channel, and a plurality of gas delivery channels located below the inlet channel and extending along a second direction and arranged along the first direction;

[0007] The air inlet channel is connected to the plurality of air delivery channels respectively through a plurality of air inlet holes arranged along the first direction;

[0008] The air extraction channel is connected to the plurality of air delivery channels respectively through a plurality of air extraction holes;

[0009] An air intake port is provided on the wall surface of the air intake channel, and the air intake port is located between the two ends of the air intake channel;

[0010] The wall surface of the air extraction channel is provided with an air extraction port;

[0011] The wall surface of each gas transmission channel is provided with a plurality of gas outlet ports arranged along the second direction; the gas distribution device provides gas to the reaction chamber through the gas outlet ports.

[0012] The embodiment of the present application further provides a semiconductor process equipment, comprising a reaction chamber and the above-mentioned gas distribution device;

[0013] The gas distribution device is arranged on the top of the reaction chamber, and the plurality of gas outlet ports are respectively communicated with the reaction chamber.

[0014] In the embodiments of the present application, process gas can be introduced into the gas inlet channel through the gas inlet port and transmitted to the multiple gas delivery channels through multiple gas inlet holes. Gas is then supplied to the reaction chamber through the multiple gas outlet ports of each gas delivery channel, thereby increasing the diffusion area of ​​the process gas within the reaction chamber. This can, to a certain extent, improve the uniformity of contact between the process gas and the wafer surface, thereby facilitating improved uniformity of the thin film formed on the wafer surface. Furthermore, when residual process gas within the gas distribution device is extracted, the process gas within each gas delivery channel can enter the extraction channel through the corresponding extraction hole and be discharged through the extraction port, thereby preventing the process gas from lingering within the gas distribution device and causing particulate contamination. Compared with the spiral distributor in the related art, the air inlet port of the embodiment of the present application is located in the area between the two ends of the air inlet channel, which is conducive to the diffusion of the process gas in the air inlet channel. Moreover, the multiple air outlet ports provided in each gas transmission channel can further improve the diffusion uniformity of the process gas and increase the diffusion area, thereby shortening the path of the process gas in the gas distribution device, reducing the diffusion time, and enabling the process gas to reach the wafer surface more evenly, thereby improving the uniformity of the thin film generated on the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic structural diagram of the gas distribution device disclosed in an embodiment of the present application (with the gas inlet component removed);

[0016] Figure 2This is a first structural schematic diagram of the air intake component disclosed in an embodiment of the present application;

[0017] Figure 3 This is a second structural schematic diagram of the air intake member disclosed in an embodiment of the present application;

[0018] Figure 4 This is a schematic diagram of the first structure of the air extraction component disclosed in the embodiment of this application;

[0019] Figure 5 This is a second structural schematic diagram of the air extraction component disclosed in an embodiment of the present application;

[0020] Figure 6 A first structural schematic diagram of a first gas distribution component disclosed in an embodiment of the present application;

[0021] Figure 7 A second structural schematic diagram of the first gas distribution component disclosed in an embodiment of the present application;

[0022] Figure 8 for Figure 7 Cross-sectional view along AA;

[0023] Figure 9 for Figure 7 Cross-sectional view along BB;

[0024] Figure 10 for Figure 7 Cross-sectional view along CC;

[0025] Figure 11 This is a schematic structural diagram of the second gas distribution component disclosed in an embodiment of the present application;

[0026] Figure 12 This is a schematic diagram of the structure of the semiconductor disclosed in the embodiment of this application.

[0027] Description of reference numerals:

[0028] 10- Gas distribution device;

[0029] 100 - air inlet member; 110 - air inlet port; 120 - first air inlet slot;

[0030] 200 - air extraction member; 210 - air extraction port; 220 - first air extraction slot;

[0031] 300 - first air distribution part; 310 - air inlet; 311 - inclined hole section; 312 - straight hole section; 320 - air extraction hole; 330 - second air inlet groove; 340 - second air extraction groove; 350 - first air distribution groove; 360 - sealing groove;

[0032] 400 - second gas distribution component; 410 - gas outlet port; 420 - second gas distribution slot;

[0033] 20-reaction chamber;

[0034] 30- Suction device;

[0035] 40-Carrying device. DETAILED DESCRIPTION

[0036] In the distributor in the related art, the channel for transmitting the first reaction precursor is the first spiral channel, and the channel for transmitting the second reaction precursor is the second spiral channel, wherein the first reaction precursor is input from the outer circle end of the first spiral channel, and the residual first reaction precursor is extracted from the inner circle end, and the side wall of the first spiral channel is provided with multiple first exhaust holes along the spiral direction, and the first reaction precursor is passed into the process chamber through the multiple first exhaust holes; similarly, the second reaction precursor is input from the outer circle end of the second spiral channel, and the residual second reaction precursor is extracted from the inner circle end, and the side wall of the second spiral channel is provided with multiple second exhaust holes along the spiral direction, and the second reaction precursor is passed into the process chamber through the multiple second exhaust holes.

[0037] However, the first spiral channel and the second spiral channel are relatively long, resulting in inconsistent arrival times of the first reaction precursor and the second reaction precursor output from each region on the wafer surface, thereby causing low uniformity of the generated thin film.

[0038] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0039] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0040] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0041] refer to Figures 1 to 12The present invention discloses a gas distribution device 10 for providing process gas to a reaction chamber 20 to generate a process reaction in the reaction chamber 20. The gas distribution device 10 includes a distribution body having a gas inlet channel, a gas extraction channel, and a plurality of gas delivery channels.

[0042] The inlet channel is used to receive process gas and extends along a first direction. The gas delivery channel is used to deliver process gas into the reaction chamber 20. Multiple gas delivery channels are located below the inlet channel and arranged along the first direction (e.g., arranged in a certain order), and each gas delivery channel extends along a second direction. The exhaust channels are used to extract process gas remaining in the distribution body and are located on both sides of the inlet channel. The first direction, the second direction, and the vertical direction can be perpendicular to each other, and of course, other angles are also possible.

[0043] In actual operation, the gas distribution device 10 can be located at the top of the reaction chamber 20 to facilitate the introduction of process gas into the reaction chamber 20 from top to bottom. The first direction can be the front-to-back direction, and the second direction can be the left-to-right direction. Of course, other directions are also possible and are not specifically limited here.

[0044] For example, the air inlet channel can be an elongated channel, such as a straight channel; the air extraction channel can be an elongated channel, such as a straight channel or an arc-shaped channel; and the air delivery channel can be an elongated channel, such as a straight channel. In some more specific embodiments, when the distribution body is disc-shaped, the air extraction channel can be an arc-shaped channel; when the distribution body is rectangular, the air extraction channel can be a straight channel.

[0045] To achieve gas transmission, the air inlet channel is connected to the multiple air delivery channels through the multiple air inlet holes 310 arranged along the first direction. Figure 1 and Figure 6 Based on this, the process gas received by the inlet channel first flows and diffuses in the inlet channel, and then is distributed to the multiple gas delivery channels through the multiple inlet holes 310, and finally is delivered to the reaction chamber 20 by the multiple gas delivery channels for process reaction.

[0046] It should be noted here that since the air intake channel extends along the first direction and multiple air delivery channels are arranged along the first direction, the multiple air intake holes 310 are also arranged along the first direction to adapt to the setting form of the air intake channel and the multiple air delivery channels, and to realize the separate connection between the air intake channel and the multiple air delivery channels.

[0047] To achieve air extraction, the air extraction channel is connected to multiple air delivery channels through multiple air extraction holes 320, such as Figure 1 and Figure 6Based on this, when the exhaust channel is evacuated, the process gases remaining in the multiple gas delivery channels can enter the exhaust channel through their respective corresponding exhaust holes 320 and be finally extracted, thereby effectively preventing the process gases from remaining in the gas delivery channels and causing particle contamination in subsequent processes.

[0048] like Figure 2 and Figure 3 As shown, an inlet port 110 is provided on the wall of the inlet channel. The inlet port 110 is located between the two ends of the inlet channel. The inlet port 110 allows the process gas to enter the inlet channel and diffuse within the inlet channel, thereby improving the uniformity of gas input. For example, the inlet port 110 can be located in the middle of the inlet channel along the first direction, thereby further improving the uniformity of gas input.

[0049] like Figure 4 and Figure 5 As shown, the wall of the exhaust channel is provided with an exhaust port 210, through which the gas in the exhaust channel can be extracted. At the same time, the gas in multiple gas transmission channels flows toward the exhaust channel, thereby alleviating the problem of gas remaining in the distribution body and causing particle contamination to subsequent processes.

[0050] like Figure 11 As shown, the wall of each gas transmission channel is provided with a plurality of gas outlet ports 410 arranged along the second direction, and the gas distribution device 10 provides gas to the reaction chamber 20 through the gas outlet ports 410. Thus, the gas in the corresponding gas transmission channel can enter the reaction chamber 20 through the plurality of gas outlet ports 410, so as to facilitate the reaction of the gas in the reaction chamber 20.

[0051] In the embodiment of the present application, process gas can be introduced into the air inlet channel through the air inlet port 110 and transmitted to multiple gas delivery channels through multiple air inlet holes 310. Process gas is provided to the reaction chamber 20 through multiple air outlet ports 410 of each gas delivery channel, so as to increase the diffusion area of ​​the process gas in the reaction chamber 20. To a certain extent, the uniformity of the contact between the process gas and the wafer surface can be improved, which is beneficial to improving the uniformity of the thin film generated on the wafer surface.

[0052] Under the suction effect, the process gas in each gas delivery channel can enter the gas extraction channel through the corresponding gas extraction hole 320 and be discharged through the gas extraction port 210 to prevent the process gas from remaining in the gas distribution device 10 and causing particle contamination.

[0053] Compared with the spiral distributor in the related art, the air inlet port 110 in the embodiment of the present application is located in the area between the two ends of the air inlet channel, which is conducive to the diffusion of the process gas in the air inlet channel. In addition, the multiple air outlet ports 410 provided in each gas transmission channel can further improve the diffusion uniformity of the process gas and increase the diffusion area, thereby shortening the path of the process gas in the gas distribution device 10, reducing the diffusion time, and enabling the process gas to reach the wafer surface more evenly, thereby improving the uniformity of the thin film generated on the wafer surface.

[0054] In some embodiments, the distribution body may be provided with N inlet channels and N exhaust channels located on either side of the N inlet channels, where N is an integer greater than 1. Based on this configuration, N different process gases can be received through the N inlet channels on each side to meet different process requirements; accordingly, the N different process gases can be extracted from the distribution body through the N exhaust channels to prevent mixing of the process gases and thus affecting the process. For example, N can be 2, 3, 5, 7, etc., and of course, other values ​​are possible and are not specifically limited here.

[0055] Furthermore, the N exhaust channels correspond to the N intake channels one-to-one, so as to adapt the number of exhaust channels, the number of intake channels and the type of process gas.

[0056] Considering that the gas delivery channel extends along the second direction, in an embodiment of the present application, N gas inlet channels are arranged along the second direction (e.g., arranged in a certain order, etc.), so that each gas inlet channel can cover multiple gas delivery channels, so as to facilitate the distribution of the process gas in each gas inlet channel to multiple gas delivery channels.

[0057] Considering that in some cases, it is necessary to introduce multiple process gases into the reaction chamber 20, based on this situation, the multiple gas delivery channels in the embodiment of the present application include multiple gas delivery channel groups arranged along a first direction, each gas delivery channel group includes N gas delivery channels arranged along the first direction, and the N gas delivery channels in each gas delivery channel group correspond one-to-one to the N gas inlet channels. It should be noted here that the number of gas delivery channels in each gas delivery channel group corresponds to the type of process gas. For example, when two process gases need to be introduced into the reaction chamber 20 during the process, each gas delivery channel group includes two gas delivery channels, and the two gas delivery channels respectively transport the two process gases, so that the two process gases can enter the reaction chamber 20 for process reaction.

[0058] In addition, the order of the N gas transmission channels in any two gas transmission channel groups is the same. In some embodiments, each gas transmission channel group may include two gas transmission channels, namely A and B, and the order of the two gas transmission channels in each gas transmission channel group is AB, so that the order of the multiple gas transmission channels is ABABAB…AB. In other embodiments, each gas transmission channel group may include three gas transmission channels, namely A, B and C, and the order of the three gas transmission channels in each gas transmission channel group is ABC, so that the order of the multiple gas transmission channels is ABCABCABC…ABC. Of course, each gas transmission channel group may also include other numbers of gas transmission channels, and the specific ordering method can refer to the above method, which will not be repeated here.

[0059] Each air inlet channel is connected to the corresponding air supply channel through the air inlet hole 310, and each air extraction channel is connected to the corresponding air supply channel through the air extraction hole 320. In this way, after entering the air inlet channel, the process gas enters the corresponding air supply channel through the air inlet hole 310, and is transported to the reaction chamber 20 by the air supply channel for process reaction; the process gas remaining in the air supply channel can also enter the corresponding air extraction channel through the air extraction hole 320 and be finally extracted.

[0060] In some embodiments, all of the inlet holes 310 corresponding to the N inlet channels, connected to the corresponding gas delivery channels, are evenly arranged along the same line along the first direction. This arrangement allows the inlet positions of the multiple gas delivery channels to be aligned, thereby ensuring consistent entry of process gases into the gas delivery channels.

[0061] Furthermore, when the gas inlet 310 is located in the middle region of the corresponding gas transmission channel along the second direction, the symmetry of the flow path of the process gas in each gas transmission channel can be further ensured, which is conducive to improving the distribution uniformity of the process gas.

[0062] like Figure 9 and Figure 10 As shown, the air inlet holes 310 may include interconnected inclined hole sections 311 and straight hole sections 312. The inclined hole sections 311 communicate with the air inlet channel, while the straight hole sections 312 communicate with the corresponding gas delivery channel. The straight hole sections 312 of all air inlet holes 310 corresponding to the N air inlet channels are evenly arranged along the same line along the first direction. This allows the air inlet positions of the multiple gas delivery channels to be aligned, thereby ensuring consistent entry of process gas into the gas delivery channels.

[0063] The extending direction of the inclined hole section 311 forms a predetermined angle with the central axis of the gas distribution device 10. The predetermined angle can range from 10° to 80°, including, for example, 10°, 20°, 30°, 45°, 60°, 75°, 80°, etc. Of course, other angles are also possible and are not specifically limited here. The extending direction of the straight hole section 312 is parallel to the central axis of the gas distribution device 10. For example, when the gas distribution device 10 is assembled into the reaction chamber 20, the central axis of the gas distribution device 10 extends in the vertical direction. In this case, the inclined hole section 311 extends obliquely from top to bottom, while the straight hole section 312 extends vertically from top to bottom.

[0064] It should be noted that since the N air inlet channels are arranged along the second direction, the ends of the multiple air inlet holes 310 that communicate with the air inlet channels are also arranged along the second direction. To ensure that the ends of the multiple air inlet holes 310 that communicate with the gas transmission channels are aligned, the air inlet holes 310 need to be inclined to meet this arrangement requirement. Based on this, each air inlet hole 310 in the embodiment of the present application is divided into two sections: an inclined hole section 311 and a straight hole section 312. The provision of the inclined hole section 311 satisfies this arrangement requirement.

[0065] Of course, in other embodiments, the air inlet hole 310 may be directly designed as an inclined hole, or an arc-shaped hole, etc. This approach can also meet actual needs.

[0066] In addition, considering that in some cases it is necessary to introduce multiple process gases into the reaction chamber 20, and each process gas needs to correspond to a type of gas inlet 310. On this basis, in the embodiment of the present application, all gas inlet holes 310 can include multiple groups of gas inlet hole groups arranged along the first direction, and the multiple groups of gas inlet hole groups correspond one-to-one to the multiple groups of gas transmission channel groups. Each group of gas inlet hole groups includes N gas inlet holes 310 arranged along the first direction, and the N gas inlet holes 310 are respectively connected to N gas transmission channels and N gas inlet channels in the corresponding gas transmission channel group. In any two groups of gas inlet hole groups, the gas inlet holes 310 at the same position in the first direction are connected to the same gas inlet channels, and the gas inlet holes 310 at the same position in the first direction are connected to the same gas transmission channels in the gas transmission channel group. Based on this arrangement, multiple process gases can be introduced into the N gas transmission channels in a cross-wise manner, so that each process gas can be introduced into the reaction chamber 20 more evenly.

[0067] For example, taking the introduction of two process gases as an example, N is equal to 2, that is, each group of air inlet holes includes a first air inlet hole A and a second air inlet hole B, and multiple groups of air inlet holes are cross-arranged in the first direction, that is, ABAB...AB; accordingly, the gas delivery channel for conveying the first process gas and the gas delivery channel for conveying the second process gas are cross-arranged in the first direction, thereby respectively improving the distribution uniformity of the first process gas and the distribution uniformity of the second process gas.

[0068] When three process gases are introduced, N is equal to 3, that is, each group of air inlet holes includes a first air inlet hole A, a second air inlet hole B and a third air inlet hole C, and multiple groups of air inlet holes are arranged crosswise in the first direction, that is, ABCABC...ABC, and so on.

[0069] In some embodiments, each exhaust hole 320 is located at the end of the corresponding gas supply channel along the second direction. In this way, the residual process gas in each gas supply channel can be extracted from the end through the corresponding exhaust hole 320. Compared with the method of setting the exhaust hole 320 at the end of the spiral gas supply channel, the embodiment of the present application can simultaneously extract the process gas in multiple gas supply channels through multiple exhaust holes 320, thereby improving the exhaust efficiency, and also making the exhaust more sufficient to prevent the residual process gas from causing particle contamination.

[0070] In some embodiments, the exhaust port 210 can be located between the two ends of the exhaust channel along its own extension direction. This design can allow the residual gas extracted from the exhaust channel to converge from both ends to the exhaust port 210. Compared with the method of setting the exhaust port 210 at one end of the exhaust channel, the flow path of the residual gas can be shortened, thereby improving the exhaust efficiency.

[0071] Furthermore, the exhaust port 210 can be located in the middle area of ​​the exhaust channel along its own extension direction, that is, in the middle position. In this case, the flow paths of the residual gas in the exhaust channel on both sides of the exhaust port 210 can be made the same, which is conducive to making the residual gas flow more evenly to the exhaust port 210, and to a certain extent, the adequacy of the exhaust can be improved, and the situation that the residual gas in a part of the gas transmission channel connected to the exhaust channel is completely exhausted while the residual gas in another part of the gas transmission channel is not completely exhausted can be effectively prevented.

[0072] In some embodiments, the air inlet 310 can be located in the middle area of ​​the corresponding gas delivery channel along the second direction, that is, in the middle position. In this case, when the process gas is introduced into the corresponding gas delivery channel through the air inlet 310, the process gas can be diffused from the middle area of ​​the gas delivery channel to the two end areas, which can improve the uniformity of the diffusion of the process gas to the two end areas to a certain extent, thereby helping to improve the uniformity of the process gas entering the reaction chamber 20.

[0073] In some embodiments, along the direction of exhaust, the cross-sectional area of ​​the air inlet end of the exhaust hole 320 is larger than the cross-sectional area of ​​the air outlet end of the exhaust hole 320. Based on this setting, during the exhaust process, the flow area through which the process gas flows changes from large to small, so that the exhaust speed can be changed from fast to slow, and the flow of the process gas becomes more gentle, thereby achieving better exhaust effect.

[0074] Taking the use of a gas distribution device 10 to introduce a first process gas (e.g., precursor A) and a second process gas (e.g., precursor B) into a reaction chamber 20 as an example, in the gas distribution device 10 of an embodiment of the present application, the N gas inlet channels may include a first gas inlet channel and a second gas inlet channel, the N gas exhaust channels may include a first gas exhaust channel and a second gas exhaust channel, and the N gas delivery channels may include a first gas delivery channel and a second gas delivery channel.

[0075] To introduce the first process gas, the first gas inlet channel communicates with all of the first gas delivery channels in the multiple gas delivery channel groups via multiple first gas inlet holes. Furthermore, multiple first gas outlet ports are provided on the walls of the first gas delivery channels. With this arrangement, the first process gas in the first gas inlet channel can be introduced into all of the first gas delivery channels in the multiple gas delivery channel groups via the multiple first gas inlet holes, and then into reaction chamber 20 through the first gas outlet ports of all of the first gas delivery channels in the multiple gas delivery channel groups for process reaction.

[0076] To introduce the second process gas, the second gas inlet channel is connected to all of the second gas delivery channels in the multiple gas delivery channel groups via multiple second gas inlet holes. Furthermore, multiple second gas outlet ports are provided on the walls of the second gas delivery channels. With this arrangement, the second process gas in the second gas inlet channel can be introduced into all of the second gas delivery channels in the multiple gas delivery channel groups via the multiple second gas inlet holes, and then into reaction chamber 20 through the second gas outlet ports of all of the second gas delivery channels in the multiple gas delivery channel groups for process reaction.

[0077] To extract the first process gas, the first gas extraction channel is connected to all of the first gas delivery channels in the multiple gas delivery channel groups via a plurality of first gas extraction holes. Furthermore, a first gas extraction port is provided on the wall of the first gas extraction channel. With this arrangement, any remaining first process gas in all of the first gas delivery channels in the multiple gas delivery channel groups can enter the first gas extraction channel via the plurality of first gas extraction holes and ultimately be extracted through the first gas extraction port, thereby preventing any residue of the first process gas in the first gas delivery channels.

[0078] To extract the second process gas, the second gas extraction channel is connected to all the second gas delivery channels in the multiple gas delivery channel groups via a plurality of second gas extraction holes. Second gas extraction ports are also provided on the walls of the second gas extraction channels. With this arrangement, any remaining second process gas in all the second gas delivery channels in the multiple gas delivery channel groups can enter the second gas extraction channel via the plurality of second gas extraction holes and ultimately be extracted through the second gas extraction ports, preventing any second process gas from remaining in the second gas delivery channels.

[0079] To receive the first process gas, a first gas inlet port is provided on the wall of the first gas inlet channel. Furthermore, the first gas inlet port can be located between the two ends of the first gas inlet channel along its own extension direction. Based on this arrangement, the first process gas can be introduced into the first gas inlet channel via the first gas inlet port, so that it can subsequently enter the first gas transmission channel and ultimately enter the reaction chamber 20 for process reaction. Furthermore, compared to arranging the first gas inlet port at the end of the first gas inlet channel, the arrangement of the first gas inlet port allows the first process gas to flow toward both ends after entering the first gas inlet channel. This can shorten the flow path of the first process gas to a certain extent, improve diffusion efficiency, and facilitate improved uniformity of distribution of the first process gas.

[0080] To receive the second process gas, a second gas inlet port is provided on the wall of the second gas inlet channel; the second gas inlet port is located between the two ends of the second gas inlet channel along its own extension direction. Based on this arrangement, the second process gas can be introduced into the second gas inlet channel via the second gas inlet port, so that it can subsequently enter the second gas transmission channel and ultimately enter the reaction chamber 20 for process reaction. Moreover, compared to arranging the second gas inlet port at the end of the second gas inlet channel, the second process gas can flow to both ends after entering the second gas inlet channel. This can shorten the flow path of the second process gas to a certain extent, improve diffusion efficiency, and facilitate improved uniformity of the distribution of the second process gas.

[0081] The following will be combined Figures 1 to 11 The specific structure of the allocation ontology is elaborated in detail, specifically:

[0082] To form an air intake channel, an air extraction channel and multiple air delivery channels, the distribution body in the embodiment of the present application may include an air intake member 100 , an air extraction member 200 , a first air distribution member 300 and a second air distribution member 400 .

[0083] Among them, the air intake part 100 and the air extraction part 200 are both arranged on the upper surface of the first air distribution part 300, and the second air distribution part 400 is arranged on the lower surface of the first air distribution part 300, and an air intake channel is formed between the air intake part 100 and the first air distribution part 300, an air extraction channel is formed between the air extraction part 200 and the first air distribution part 300, and multiple gas transmission channels are formed between the first air distribution part 300 and the second air distribution part 400. Based on this arrangement, an air intake channel, an air extraction channel and multiple gas transmission channels are respectively formed in the distribution body to facilitate the reception, transmission and extraction of process gases.

[0084] Furthermore, the air inlet port 110 is opened on the air inlet part 100 so as to introduce the process gas into the air inlet channel through the air inlet port 110; the exhaust port 210 is opened on the exhaust part 200 so as to extract the residual process gas in the exhaust channel through the exhaust port 210; the air outlet port 410 is opened on the second gas distribution part 400 so as to introduce the process gas in the gas delivery channel into the reaction chamber 20 for process reaction.

[0085] In addition, the air inlet hole 310 and the air extraction hole 320 are both provided in the first air distribution component 300 , so that the corresponding air inlet channel is connected to the air delivery channel through the air inlet hole 310 , and the corresponding air extraction channel is connected to the air delivery channel through the air extraction hole 320 .

[0086] For example, the air inlet part 100 and the first air distribution part 300, the air exhaust part 200 and the first air distribution part 300, and the second air distribution part 400 and the first air distribution part 300 can all be assembled using a detachable connection method, such as fastener connection, snap connection, sliding connection, plug-in connection, etc., to facilitate disassembly and assembly, thereby facilitating maintenance.

[0087] In a more specific embodiment, the air inlet component 100, the air extraction component 200, and the second air distribution component 400 are each fixed to the first air distribution component 300 by screws to facilitate assembly and disassembly.

[0088] Of course, fixed connection methods such as welding, bonding, riveting, etc. can be used between the air inlet part 100 and the first air distribution part 300, between the air exhaust part 200 and the first air distribution part 300, and between the second air distribution part 400 and the first air distribution part 300 to ensure the firmness, reliability and sealing of the connection.

[0089] In other embodiments, the distribution body can also be an integrated structure. For example, the air inlet channel, the air extraction channel and multiple air delivery channels can be formed on the distribution body by casting, machining, etc. This method can further improve the sealing performance of the distribution body.

[0090] refer to Figure 2 、 Figure 3 and Figure 6 In the embodiment of the present application, a first air inlet groove 120 may be provided on the surface of the air inlet part 100 facing the first air distribution part 300, and correspondingly, a second air inlet groove 330 may be provided on the surface of the first air distribution part 300 facing the air inlet part 100. In this way, the first air inlet groove 120 and the second air inlet groove 330 are interlocked to form an air inlet channel.

[0091] In other embodiments, the first air inlet groove 120 may be provided on the surface of the air inlet part 100 facing the first air distribution part 300, and the surface of the first air distribution part 300 facing the air inlet part 100 may cover the notch of the first air inlet groove 120 for sealing. This method may also form an air inlet channel.

[0092] In other embodiments, a second air inlet groove 330 may be provided on the surface of the first air distribution component 300 facing the air inlet component 100, and the surface of the air inlet component 100 facing the first air distribution component 300 may be covered and sealed at the notch of the second air inlet groove 330. This method may also form an air inlet channel.

[0093] For example, the first air inlet groove 120 and the second air inlet groove 330 may both be long strip grooves, so as to form a long strip air inlet channel, so that the air inlet channel can simultaneously supply air to multiple air transmission channels.

[0094] Furthermore, the air inlet port 110 penetrates the side wall of the first air inlet groove 120 to connect the air inlet port 110 with the air inlet channel, and the multiple air inlet holes 310 respectively penetrate the side wall of the second air inlet groove 330, so that the process gas can enter the air inlet channel through the air inlet port 110.

[0095] For example, the aperture of the inlet port 110 can be 5 mm to 15 mm to facilitate smooth passage of process gas. It should be noted that if the aperture of the inlet port 110 is too small, the inlet volume will be small, while if the aperture of the inlet port 110 is too large, the inlet volume will be large. Regardless of whether the inlet volume is small or large, the time and amount of process gas reaching the wafer surface will vary, thereby affecting the quality of the film layer formed on the wafer surface.

[0096] Considering that a variety of process gases may need to be introduced into the reaction chamber 20 during the process, it is necessary to form a variety of gas inlet channels. Based on this, the surface of the gas inlet member 100 facing the first gas distribution member 300 may be provided with a plurality of first gas inlet grooves 120. Correspondingly, the surface of the first gas distribution member 300 facing the gas inlet member 100 may be provided with a plurality of second gas inlet grooves 330. The plurality of first gas inlet grooves 120 and the plurality of second gas inlet grooves 330 are correspondingly engaged with each other to form a plurality of gas inlet channels. The plurality of different process gases can be received through the plurality of gas inlet channels and the plurality of different process gases can be separated.

[0097] refer to Figures 4 to 6 In the embodiment of the present application, a first air extraction groove 220 may be provided on the surface of the air extraction member 200 facing the first air distribution member 300, and correspondingly, a second air extraction groove 340 may be provided on the surface of the first air distribution member 300 facing the air extraction member 200. In this way, the first air extraction groove 220 and the second air extraction groove 340 are interlocked to form an air extraction channel.

[0098] In other embodiments, a first air extraction groove 220 may be provided on the surface of the air extraction member 200 facing the first air distribution member 300, and the surface of the first air distribution member 300 facing the air extraction member 200 may be covered with a notch of the first air extraction groove 220 for sealing. This method may also form an air extraction channel.

[0099] In other embodiments, a second air extraction groove 340 may be provided on the surface of the first air distribution component 300 facing the air extraction component 200, and the surface of the air extraction component 200 facing the first air distribution component 300 may be covered with a notch of the second air extraction groove 340 for sealing. This method can also form an air extraction channel.

[0100] Exemplarily, the first air extraction groove 220 and the second air extraction groove 340 may both be long strip grooves, so as to form a long strip air extraction channel, so that multiple gas transmission channels can be simultaneously exhausted through the air extraction channel.

[0101] In some more specific embodiments, the first air extraction groove 220 and the second air extraction groove 340 may both be semi-cylindrical, and the groove depth may range from 3 mm to 5 mm.

[0102] Furthermore, the exhaust port 210 passes through the side wall of the first exhaust groove 220 to connect the exhaust port 210 with the exhaust channel, and multiple exhaust holes 320 respectively pass through the side walls of the second exhaust groove 340. In this way, the residual gas in the multiple gas transmission channels can enter the exhaust channel through the multiple exhaust holes 320 and be finally exhausted.

[0103] For example, the diameter of the air extraction port 210 can be 3mm to 5.5mm to facilitate smoother air extraction. The first air inlet groove 120 and the second air inlet groove 330 can both be rectangular semi-cylindrical, with a length ranging from 315mm to 335mm and a groove depth ranging from 5mm to 15mm.

[0104] It should be noted that the purge gas flows along the exhaust channel toward the exhaust port 210, and ultimately, under the action of the suction device 30, the residual process gas is extracted through the vacuum line. However, if the aperture of the exhaust port 210 and the depth of the first and second air inlet grooves 120 and 330 are too small or too large, the speed at which the purge gas is discharged from the gas distribution device 10 will be affected. Proper dimensions will prevent the process gas from generating particles in the gas distribution device 10.

[0105] In addition, to form air extraction channels on both sides of the air inlet channel, the distribution body may include two air extraction members 200, which are respectively arranged on both sides of the air inlet member 100 in the second direction, so as to form air extraction channels on both sides of the air inlet channel.

[0106] Considering that different process gases may need to be extracted during the process, it is necessary to form multiple exhaust channels. Based on this, the surface of the exhaust member 200 facing the first gas distribution member 300 can be provided with multiple first exhaust grooves 220. Correspondingly, the surface of the first gas distribution member 300 facing the gas inlet member 100 can be provided with multiple second exhaust grooves 340. The multiple first exhaust grooves 220 and the multiple second exhaust grooves 340 are correspondingly engaged to form multiple exhaust channels, so that multiple different process gases can be extracted through the multiple exhaust channels respectively and the multiple different process gases can be separated.

[0107] refer to Figure 7 and Figure 11 In an embodiment of the present application, a plurality of first gas distribution grooves 350 may be provided on the surface of the first gas distribution component 300 facing the second gas distribution component 400, and correspondingly, a plurality of second gas distribution grooves 420 may be provided on the surface of the second gas distribution component 400 facing the first gas distribution component 300. In this way, the plurality of first gas distribution grooves 350 and the plurality of second gas distribution grooves 420 are snapped together in one-to-one correspondence to form a plurality of gas transmission channels.

[0108] In other embodiments, a plurality of first gas distribution grooves 350 may be provided on the surface of the first gas distribution component 300 facing the second gas distribution component 400, and the surface of the second gas distribution component 400 facing the first gas distribution component 300 may be covered and sealed at the respective notches of the plurality of first gas distribution grooves 350. In this way, a plurality of gas transmission channels may also be formed.

[0109] In other embodiments, a plurality of second gas distribution grooves 420 may be provided on the surface of the second gas distribution component 400 facing the first gas distribution component 300, and the surface of the first gas distribution component 300 facing the second gas distribution component 400 may be covered and sealed at the respective notches of the plurality of second gas distribution grooves 420. This method may also form a plurality of gas transmission channels.

[0110] For example, the first gas distribution groove 350 and the second gas distribution groove 420 can each be an elongated groove to form a plurality of elongated gas transmission channels. In some specific embodiments, the first gas distribution groove 350 and the second gas distribution groove 420 can each be semi-cylindrical. For example, the first gas distribution groove 350 and the second gas distribution groove 420 can each have a U-shaped cross-section. Of course, other shapes are also possible and are not specifically limited here.

[0111] Furthermore, multiple first gas distribution grooves 350 are respectively connected to the second gas inlet grooves 330 through multiple gas inlet holes 310, so that the process gas in the gas inlet channel can be distributed to the multiple gas transmission channels through the multiple gas inlet holes 310; each second gas distribution groove 420 has multiple gas outlet ports 410 on its side wall, and the process gas in the multiple gas transmission channels can be introduced into the reaction chamber 20 through the multiple gas outlet ports 410 for process reaction.

[0112] Considering that a variety of different process gases may need to be introduced into the reaction chamber 20 during the process, it is necessary to form a variety of gas delivery channels. Based on this, the surface of the first gas distribution component 300 facing the second gas distribution component 400 may be provided with several groups of first gas distribution grooves 350, and each group of first gas distribution grooves 350 may include multiple first gas distribution grooves 350; correspondingly, the surface of the second gas distribution component 400 facing the first gas distribution component 300 may be provided with multiple groups of second gas distribution grooves 420, and each group of second gas distribution grooves 420 may include multiple second gas distribution grooves 420. The multiple first gas distribution grooves 350 in each group are correspondingly engaged with the multiple second gas distribution grooves 420 in the corresponding group to form several groups of gas delivery channels, and each group of gas delivery channels includes multiple gas delivery channels, so as to receive a variety of different process gases respectively through the multiple gas inlet channels in each group, and the multiple different process gases can be separated.

[0113] In some embodiments, the first gas distribution component 300 and the second gas distribution component 400 can both be disc-shaped structures and are coaxially arranged. Based on this design, the entire gas distribution device 10 can be disc-shaped, thereby adapting to the shape of the cylindrical reaction chamber 20.

[0114] The distribution body may include two air extraction parts 200, which are fan-shaped ring structures. The two air extraction parts 200 are symmetrically distributed on the upper surface of the first air distribution part 300 in the second direction, and are respectively located in the edge area of ​​the first air distribution part 300, and the two air extraction parts 200 are both coaxially arranged with the first air distribution part 300; the air intake part 100 can be a long strip structure, which extends along the first direction and is located between the two air extraction parts 200.

[0115] Based on the above-mentioned arrangement, process gas can be introduced from the middle area of ​​each gas transmission channel through the air inlet member 100, and the residual gas in each gas transmission channel can be extracted from both sides of the second direction through the two exhaust members 200. Compared with the method of introducing process gas from one end of the spiral air channel and extracting process gas from the other end, the embodiment of the present application can supply and exhaust gas to multiple gas transmission channels at the same time, thereby improving the gas supply and ventilation efficiency, and effectively alleviating problems such as untimely gas supply or slow extraction speed; and the shape of the exhaust member 200 is adapted to the shape of the first gas distribution member 300, so that the exhaust member 200 is closer to the edge area of ​​the first gas distribution member 300, which means that the exhaust member 200 can be closer to the end of each gas transmission channel, so that the process gas in each gas transmission channel can be more fully extracted, and the occurrence of gas residue due to incomplete exhaustion can be prevented.

[0116] Considering that the gas distribution device 10 is assembled from multiple parts, in order to improve the sealing performance, the gas distribution device 10 may further include a sealing member, and the sealing member is used to seal the joints to prevent gas leakage.

[0117] Among them, the sealing member can be provided at the connection between the air inlet member 100 and the first air distribution member 300 to ensure the sealing of the connection between the air inlet member 100 and the first air distribution member 300 and prevent the received process gas from leaking between the air inlet member 100 and the first air distribution member 300.

[0118] Optionally, a sealing groove 360 ​​is provided on the surface of the air inlet part 100 facing the first air distribution part 300, and at least one of the surfaces of the first air distribution part 300 facing the air inlet part 100. The sealing groove 360 ​​surrounds the periphery of the air inlet channel. The sealing member is arranged in the sealing groove 360 ​​and surrounds the periphery of the air inlet channel, thereby achieving sealing of the air inlet channel and preventing leakage of process gas from the air inlet channel.

[0119] A seal may also be provided at the connection between the exhaust member 200 and the first gas distribution member 300 to ensure the sealing of the connection between the exhaust member 200 and the first gas distribution member 300 and prevent residual process gas from leaking between the exhaust member 200 and the first gas distribution member 300.

[0120] Optionally, a sealing groove 360 ​​is provided on the surface of the exhaust member 200 facing the first air distribution member 300, and at least one of the surfaces of the first air distribution member 300 facing the exhaust member 200. The sealing groove 360 ​​surrounds the periphery of the exhaust channel. The sealing member is arranged in the sealing groove 360 ​​and surrounds the periphery of the exhaust channel, thereby achieving sealing of the exhaust channel and preventing leakage of process gas from the exhaust channel.

[0121] A seal may also be provided at the connection between the first gas distribution component 300 and the second gas distribution component 400 to ensure the sealing of the connection between the first gas distribution component 300 and the second gas distribution component 400 and prevent process gas from leaking between the first gas distribution component 300 and the second gas distribution component 400 .

[0122] Optionally, a sealing groove 360 ​​is provided on at least one of the surfaces of the second gas distribution component 400 facing the first gas distribution component 300 and the surfaces of the first gas distribution component 300 facing the second gas distribution component 400. The sealing groove 360 ​​surrounds the periphery of the gas transmission channel. The seal is arranged in the sealing groove 360 ​​and surrounds the periphery of the gas transmission channel, thereby achieving sealing of the gas transmission channel and preventing leakage of process gas from the gas transmission channel.

[0123] Exemplarily, the sealing member may be a sealing ring (eg, an O-Ring, etc.). Of course, it may also be other types, which are not specifically limited here.

[0124] Based on the above-mentioned gas distribution device 10, the embodiment of the present application further discloses a semiconductor process equipment, referring to Figures 1 to 12 The disclosed semiconductor process equipment includes a reaction chamber 20 and the above-mentioned gas distribution device 10, wherein the gas distribution device 10 is arranged on the top of the reaction chamber 20, and a plurality of gas outlet ports 410 are respectively connected to the reaction chamber 20.

[0125] In addition to the above structure, the semiconductor process equipment may further include a suction device 30 and a carrier device 40, wherein the carrier device 40 is disposed in the reaction chamber 20 and is used to carry wafers. The suction device 30 is connected to the reaction chamber 20 via a first vacuum pipeline, so that under the action of the suction device 30, the process exhaust gas in the reaction chamber 20 is extracted through the first vacuum pipeline; in addition, the suction device 30 may be connected to the gas distribution device 10 via a second vacuum pipeline, so that under the action of the suction device 30, the residual process gas in the gas distribution device 10 is extracted. For example, the carrier device 40 may include a base for carrying the wafers, and the suction device 30 may include a dry pump.

[0126] In the embodiment of the present application, taking the introduction of precursor 1 and precursor 2 into the reaction chamber 20 as an example, the main steps of depositing a thin film are as follows:

[0127] In the first step, the precursor 1 enters the first inlet channel through the first inlet port and is transferred and diffused along the first inlet channel from the middle region to the two end regions;

[0128] The precursor 1 vertically enters the plurality of first gas delivery channels through the plurality of first gas inlet holes, and is transported and diffused along each of the first gas delivery channels from the middle region to the two end regions;

[0129] The precursor 1 is vertically transported and diffused into the reaction chamber 20 through the plurality of first gas outlet ports corresponding to each first gas delivery channel, and finally reaches the wafer surface.

[0130] In the second step, the purge gas is transmitted along multiple first gas delivery channels, carrying the residual precursor in each first gas delivery channel, and enters the exhaust channel through the first exhaust hole corresponding to each first gas delivery channel. Under the action of the suction device 30, the purge gas and the residual first process gas it carries are extracted together through the exhaust port 210.

[0131] In the third step, the precursor 2 enters the second air inlet channel through the second air inlet port and is transferred and diffused along the second air inlet channel from the middle area to the two end areas;

[0132] The second precursor vertically enters the plurality of second gas delivery channels through the plurality of second gas inlet holes, and is transmitted and diffused along each second gas delivery channel from the middle region to the two end regions;

[0133] The second precursor is vertically transported and diffused into the reaction chamber 20 through the plurality of second gas outlet ports corresponding to each second gas delivery channel, and finally reaches the wafer surface.

[0134] In the fourth step, the purge gas is transmitted along multiple second gas delivery channels, carrying the residual precursor 2 in each second gas delivery channel, and enters the exhaust channel through the second exhaust hole corresponding to each second gas delivery channel. Under the action of the suction device 30, the purge gas and the residual second process gas it carries are extracted together through the exhaust port 210.

[0135] In summary, the embodiment of the present application can form a plurality of cross-connected channels through the redesign of the gas distribution device 10, which can enable the process gas to be quickly transmitted and diffused throughout the gas distribution device 10, thereby shortening the transmission path of the process gas in other internal parts, reducing the diffusion time, and enabling the process gas to quickly and evenly reach the wafer surface to improve the uniformity of the thin film on the wafer surface; and, it can also reduce the circulation time of the purge gas in the gas distribution device 10, improve the purge efficiency, and quickly discharge the residual process gas to prevent the process gas from remaining for too long, causing particles to be produced inside the gas distribution device 10 and affecting product quality.

[0136] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A gas distribution device for supplying gas to a reaction chamber (20), characterized in that: The gas distribution device (10) comprises: a distribution body, the distribution body being provided with: an air inlet channel extending in a first direction, air extraction channels located on both sides of the air inlet channel, and a plurality of air delivery channels located below the air inlet channel and extending in a second direction and arranged in the first direction; The air inlet channel is connected to the plurality of air delivery channels respectively through a plurality of air inlet holes (310) arranged along the first direction; The air extraction channel is connected to the plurality of air delivery channels respectively through a plurality of air extraction holes (320); An air intake port (110) is provided on a wall surface of the air intake channel, and the air intake port (110) is located between two ends of the air intake channel; The wall surface of the air extraction channel is provided with an air extraction port (210); The wall surface of each gas transmission channel is provided with a plurality of gas outlet ports (410) arranged along the second direction; the gas distribution device (10) provides gas to the reaction chamber (20) through the gas outlet ports (410).

2. The gas distribution device according to claim 1, characterized in that The distribution body is provided with N air inlet channels and N air extraction channels located on each side of the N air inlet channels, wherein N is an integer greater than 1; The N air inlet channels are arranged along the second direction; The N air extraction channels correspond one to one with the N air intake channels; The plurality of gas transmission channels include a plurality of gas transmission channel groups arranged along the first direction, each gas transmission channel group includes N gas transmission channels arranged along the first direction, and the N gas transmission channels in each gas transmission channel group correspond one-to-one to the N air inlet channels; Each of the air inlet channels is connected to the corresponding air delivery channel via the air inlet hole (310), and each of the air extraction channels is connected to the corresponding air delivery channel via the air extraction hole (320).

3. The gas distribution device according to claim 2, characterized in that All the air inlet holes (310) corresponding to the N air inlet channels are connected to one end of the corresponding air delivery channel and are evenly arranged on the same line along the first direction.

4. The gas distribution device according to claim 3, characterized in that The air inlet (310) comprises an inclined hole section (311) and a straight hole section (312) that are connected to each other, the inclined hole section (311) is connected to the air inlet channel, and the straight hole section (312) is connected to the corresponding air delivery channel; The straight hole sections (312) of all the air inlet holes (310) corresponding to the N air inlet channels are evenly arranged on the same line along the first direction.

5. The gas distribution device according to claim 3, characterized in that: All the air inlet holes (310) include multiple groups of air inlet hole groups arranged along the first direction, and the multiple groups of air inlet hole groups correspond one to one to the multiple groups of gas transmission channel groups; Each of the air inlet holes comprises N air inlet holes (310) arranged along the first direction, and the N air inlet holes (310) are respectively connected to the N air delivery channels and the N air inlet channels in the corresponding air delivery channel group; In any two groups of the air inlet hole groups, the air inlet holes (310) at the same position in the first direction are connected to the same air inlet channels, and the air delivery channels connected to the air inlet holes (310) at the same position in the first direction are at the same position in the first direction in the air delivery channel groups.

6. The gas distribution device according to claim 1, characterized in that Each of the air extraction holes (320) is located at the end of the corresponding air delivery channel along the second direction.

7. The gas distribution device according to claim 1, characterized in that The air extraction port (210) is located in the middle area of ​​the air extraction channel along its own extension direction; And / or, the air inlet hole (310) is located in a central area of ​​the corresponding air delivery channel along the second direction.

8. The gas distribution device according to claim 1, characterized in that Along the air extraction direction, the cross-sectional area of ​​the air inlet end of the air extraction hole (320) is larger than the cross-sectional area of ​​the air outlet end of the air extraction hole (320).

9. The gas distribution device according to claim 2, characterized in that: The N air inlet channels include a first air inlet channel and a second air inlet channel, the N air extraction channels include a first air extraction channel and a second air extraction channel, and the N air delivery channels include a first air delivery channel and a second air delivery channel; The first air inlet channel is connected to all the first air delivery channels in the plurality of air delivery channel groups through a plurality of first air inlet holes, and the second air inlet channel is connected to all the second air delivery channels in the plurality of air delivery channel groups through a plurality of second air inlet holes. The first air extraction channel is connected to all the first air delivery channels in the plurality of air delivery channel groups through a plurality of first air extraction holes, and the second air extraction channel is connected to all the second air delivery channels in the plurality of air delivery channel groups through a plurality of second air extraction holes. A first air inlet port is provided on the wall surface of the first air inlet channel, and a second air inlet port is provided on the wall surface of the second air inlet channel; A first air extraction port is provided on the wall surface of the first air extraction channel, and a second air extraction port is provided on the wall surface of the second air extraction channel; The wall surface of the first gas transmission channel is provided with a plurality of first gas outlet ports, and the wall surface of the second gas transmission channel is provided with a plurality of second gas outlet ports.

10. The gas distribution device according to any one of claims 1 to 9, characterized in that: The distribution body comprises an air inlet component (100), an air extraction component (200), a first air distribution component (300) and a second air distribution component (400); The air inlet component (100) and the air extraction component (200) are both arranged on the upper surface of the first air distribution component (300), and the second air distribution component (400) is arranged on the lower surface of the first air distribution component (300); The air intake member (100) and the first air distribution member (300) form the air intake channel, and the air intake port (110) is opened on the air intake member (100); The air extraction channel is formed between the air extraction member (200) and the first air distribution member (300), and the air extraction port (210) is opened on the air extraction member (200); A plurality of gas transmission channels are formed between the first gas distribution component (300) and the second gas distribution component (400), and the gas outlet port (410) is opened on the second gas distribution component (400); The air inlet hole (310) and the air extraction hole (320) are both provided in the first air distribution component (300).

11. The gas distribution device according to claim 10, characterized in that A first air inlet groove (120) is provided on the surface of the air inlet member (100) facing the first air distribution member (300), and the air inlet port (110) passes through a side wall of the first air inlet groove (120); A second air inlet groove (330) is provided on the surface of the first air distribution component (300) facing the air inlet component (100), and a plurality of air inlet holes (310) respectively penetrate the side walls of the second air inlet groove (330); The first air inlet groove (120) and the second air inlet groove (330) are engaged with each other to form the air inlet channel.

12. The gas distribution device according to claim 10, characterized in that A first air extraction groove (220) is provided on the surface of the air extraction member (200) facing the first air distribution member (300), and the air extraction port (210) passes through the side wall of the first air extraction groove (220); A second air extraction groove (340) is provided on the surface of the first air distribution member (300) facing the air extraction member (200), and a plurality of air extraction holes (320) respectively penetrate the side walls of the second air extraction groove (340); The first air extraction groove (220) and the second air extraction groove (340) are engaged with each other to form the air extraction channel.

13. The gas distribution device according to claim 11, characterized in that A plurality of first gas distribution grooves (350) are provided on a surface of the first gas distribution component (300) facing the second gas distribution component (400), and the plurality of first gas distribution grooves (350) are respectively connected to the second gas inlet grooves (330) through the plurality of gas inlet holes (310); A plurality of second gas distribution grooves (420) are provided on the surface of the second gas distribution member (400) facing the first gas distribution member (300), and a plurality of the gas outlet ports (410) are provided on the side wall of each second gas distribution groove (420); The plurality of first gas distribution grooves (350) and the plurality of second gas distribution grooves (420) are engaged in a one-to-one correspondence to form the plurality of gas transmission channels.

14. The gas distribution device according to claim 10, characterized in that The first gas distribution component (300) and the second gas distribution component (400) are both disc-shaped structures, and are coaxially arranged; The distribution body comprises two air extraction members (200), the air extraction members (200) are fan-shaped ring structures, the two air extraction members (200) are symmetrically distributed on the upper surface of the first air distribution member (300) in the second direction, and are respectively located in the edge area of ​​the first air distribution member (300), and the two air extraction members (200) are coaxially arranged with the first air distribution member (300); The air intake member (100) is a long strip structure, extending along the first direction and located between the two air extraction members (200).

15. The gas distribution device according to claim 10, characterized in that The gas distribution device (10) further comprises a sealing member, which is provided at a connection between the gas inlet member (100) and the first gas distribution member (300), a connection between the gas extraction member (200) and the first gas distribution member (300), and a connection between the first gas distribution member (300) and the second gas distribution member (400).

16. A semiconductor process equipment, characterized in that: include: A reaction chamber (20) and a gas distribution device (10) according to any one of claims 1 to 15; The gas distribution device (10) is arranged at the top of the reaction chamber (20), and the plurality of gas outlet ports (410) are respectively communicated with the reaction chamber (20).

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