Semiconductor process equipment and air inlet structure thereof

Abstract

The invention provides semiconductor process equipment and an air inlet structure thereof. The air inlet structure comprises a flow guide assembly and a base body internally provided with an air uniformizing cavity. Wherein the flow guide assembly is located in the gas uniformizing cavity; the base body is provided with an air inlet channel communicating with the air uniformizing cavity and a plurality of air outlet channels communicating with the air uniformizing cavity and arranged in the first direction. The gas inlet channel is used for providing gas into the gas uniformizing cavity; the flow guide assembly is located between the air inlet channel and the multiple air outlet channels and used for guiding air in the air uniformizing cavity to flow so as to evenly provide air for the multiple air outlet channels, and the phenomenon that the farther the air outlet channel is away from the air inlet channel, the less the air is provided is avoided.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to, but are not limited to, the field of semiconductor technology, and in particular, to a semiconductor process equipment and an air intake structure thereof. Background Art

[0002] Chemical Vapor Deposition (CVD) silicon epitaxial growth equipment uses CVD technology to deposit thin silicon films on substrates such as silicon. Silicon epitaxy is typically achieved by introducing vapor from a gaseous or liquid reactant, the material that will form the silicon film, into a reaction chamber at a reasonable flow rate. This vapor flows over a heated wafer, causing the gaseous reactant to chemically react on the wafer surface to produce silicon, ultimately depositing a thin silicon film.

[0003] During the CVD epitaxial growth process, multiple gases enter the reaction chamber and diffuse within it. Some of these gases diffuse into the gate valve between the transfer chamber and the reaction chamber, causing particle deposition and corrosion on the valve. Subsequent vibrations during the opening and closing of this valve can lead to excessive particle and metal content in the chamber. Furthermore, wafers passing through this valve run the risk of particle contamination, potentially resulting in post-process scrapping.

[0004] To address this issue, related art techniques involve supplying purge gas to the gate valve to purge particulate impurities. However, because the purge gas inlet channel cannot be located in the middle of the purge structure, the purge gas is unevenly distributed. This uneven distribution of purge gas can easily cause process gas to diffuse into areas of the gate valve where there is less purge gas, leading to particle deposition in these areas.

[0005] Therefore, ensuring the uniform distribution of purge gas at the gate valve has become a technical problem that needs to be solved urgently. Summary of the Invention

[0006] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and an air intake structure thereof, which can achieve uniform gas distribution.

[0007] Based on this, the present application provides an air intake structure for semiconductor process equipment, which includes a flow guide component and a base body with a uniform air cavity formed inside; wherein, the flow guide component is located in the uniform air cavity; the base body has an air intake channel connected to the uniform air cavity and a plurality of air outlet channels connected to the uniform air cavity and arranged along a first direction; the air intake channel is used to provide gas to the uniform air cavity; the flow guide component is located between the air intake channel and the plurality of air outlet channels, and is used to guide the flow of gas in the uniform air cavity to uniformly provide gas to the plurality of air outlet channels.

[0008] In some embodiments, the air inlet channel is located at the top of the air uniforming cavity, and the multiple air outlet channels are all located at the bottom of the air uniforming cavity; the guide assembly includes: a guide plate, located between the air inlet channel and the multiple air outlet channels and extending along the first direction, the guide plate having a guide surface facing the air inlet channel and a connecting surface facing the air outlet channel; a connecting portion, the guide plate is installed in the air uniforming cavity through the connecting portion, and the connecting portion allows the guide plate to rotate around a second direction with the connecting portion as a fulcrum, wherein the second direction intersects with the first direction; a plurality of guide columns, each guide column is connected to the connecting surface, the number of guide columns is the same as the number of air outlet channels and is arranged one-to-one, and when the guide plate rotates around the second direction, it drives the guide column close to or away from the corresponding air outlet channel.

[0009] In some embodiments, when the guide plate is in a horizontal state, the axis of the guide column and the axis of the corresponding air outlet channel are arranged collinearly.

[0010] In some embodiments, each guide column includes a first end surface facing the air outlet channel, and an area of ​​the first end surface is smaller than an area of ​​the corresponding air outlet channel.

[0011] In some embodiments, the guide column includes a second end surface connected to the connecting surface, and the cross-sectional area of ​​the guide column gradually decreases from the first end surface to the second end surface.

[0012] In some embodiments, the guide plate has two end surfaces in its extension direction, and the distances between the two end surfaces and the inner wall surface of the base at corresponding positions are the same.

[0013] In some embodiments, it also includes: a limit member, whose fixed end is connected to the base and is located in the air uniforming cavity, and whose free end faces the guide surface, and the limit member is located above the guide plate; and the limit member and the air inlet channel are respectively located on both sides of the connecting portion along the first direction.

[0014] In some embodiments, the connecting portion includes a first connecting shaft, a second connecting shaft and an annular structure; the first connecting shaft is fixedly connected to the base, and the first connecting shaft extends along the second direction; one end of the second connecting shaft is fixedly connected to the center of the guide surface, and the other end of the second connecting shaft is fixedly connected to the annular structure; the annular structure is sleeved on the first connecting shaft so that the annular structure can rotate around the first connecting shaft.

[0015] In some embodiments, it also includes a limit member and a cross beam member both located above the guide plate, one end of the cross beam member is connected to the first connecting axis and extends along the first direction, the fixed end of the limit member is connected to the side of the cross beam member facing the guide surface, and the free end of the limit member faces the guide surface; the limit member and the air intake channel are respectively located on both sides of the connecting portion along the first direction.

[0016] The present invention also provides a semiconductor process equipment, comprising at least two adjacent chambers, a gate valve and the above-mentioned air intake structure, wherein the gate valve is arranged between the two adjacent chambers, and the gate valve is used to selectively connect or disconnect the two chambers; the air intake structure is located above the gate valve and is used to purge the gate valve.

[0017] The present invention has the following beneficial effects:

[0018] The intake structure of the present embodiment includes a flow guide assembly within the uniform air chamber. The flow guide assembly guides the flow of gas within the uniform air chamber, allowing the gas within the uniform air chamber to flow evenly to the multiple intake channels. Because the multiple intake channels are sequentially and spaced apart along the first direction, the gas flowing into the multiple intake channels can be evenly distributed along the first direction, avoiding the phenomenon of less gas being provided as the distance from the intake channel increases.

[0019] Furthermore, when the air intake structure provided by the embodiment of the present disclosure is specifically applied to semiconductor process equipment, it can solve the particle deposition problem caused by uneven gas distribution in the related art.

[0020] Other objects and features of the present invention will become clear by reading the specification, claims and drawings of this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments with reference to the following drawings, in which:

[0022] Figure 1 It is a structural diagram of a gate valve in the related art.

[0023] Figure 2 It is a side view of a gate valve in the related art.

[0024] Figure 3 It is a cross-sectional view of a gate valve in the related art.

[0025] Figure 4 Schematic diagram of the structure of the base of the air intake structure according to the embodiment of the present invention.

[0026] Figure 5 It is a structural schematic diagram of the guide component of the air intake structure according to an embodiment of the present invention.

[0027] Figure 64 is a side view of the air guide component of the air intake structure according to the embodiment of the present invention.

[0028] Figure 7 It is a structural schematic diagram of the cooperation between the limiting member and the base in the air intake structure according to the embodiment of the present invention.

[0029] Figure 8 It is a side view of the cooperation between the limiting member and the base in the air intake structure according to the embodiment of the present invention.

[0030] Figure 9 It is a structural schematic diagram of the cooperation between the guide assembly, the limiter and the base in the air intake structure according to the embodiment of the present invention.

[0031] Figure 10 It is a side view of the cooperation between the guide assembly, the limiter and the base in the air intake structure according to the embodiment of the present invention.

[0032] Figure 11 It is a schematic diagram of the gas flow direction when the guide component, the limit member and the base body cooperate in the air intake structure according to the embodiment of the present invention.

[0033] Figure 12 It is a structural schematic diagram of the cooperation between the limiting member and the base in the air intake structure according to another embodiment of the present invention.

[0034] Figure 13 This is a structural diagram of the cooperation between the limiting member and the cross beam member in another embodiment of the present invention.

[0035] Figure 14 It is a schematic diagram of the gas flow direction when the guide component, the limit member and the base body cooperate in the air intake structure of another embodiment of the present invention.

[0036] Description of main component symbols:

[0037] 1. Gas purge device; 2. Door panel; 3. Air outlet channel; 4. Air inlet channel;

[0038] 10. Air intake structure;

[0039] 100, matrix;

[0040] 110, air outlet channel; 120, air uniformity chamber; 130, air inlet channel; 140, first connecting shaft;

[0041] 200, diversion assembly;

[0042] 210. deflector plate; 211. deflector surface; 212. connecting surface;

[0043] 220. Connecting portion; 221. Second connecting shaft; 222. Ring structure;

[0044] 230, diversion column;

[0045] 300, limiter;

[0046] 400. Crossbeam. DETAILED DESCRIPTION

[0047] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limiting the present invention.

[0048] In related technologies, semiconductor process equipment mainly consists of a transfer chamber, a process chamber, and a gate valve disposed between the two chambers. The robot in the transfer chamber is used to transfer the wafer through the gate valve to the process chamber for processing. After the processing is completed, the wafer is then transferred from the process chamber to the transfer chamber by the robot. Figures 1 to 3 The gate valve includes a valve body with a wafer transfer channel and a door plate 2. When the door plate 2 is opened, the transfer chamber and the process chamber are connected to each other, so that the robot can transfer the wafer through the wafer transfer channel; when the door plate 2 is closed, the transfer chamber and the process chamber are disconnected, and at this time, the process chamber begins to introduce process gas for process treatment.

[0049] To prevent process gas from accumulating near the gate valve, the gate valve located between the transfer chamber and the process chamber needs to be purged with purge gas to prevent process gas in the process chamber from diffusing into the gate valve. A gas purge device 1 is located above the gate valve to supply gas to the transfer channel. The gas purge device 1 is equipped with an inlet channel 4 and an outlet channel 3. The inlet channel 4 is located on one side of the gas purge device 1 and is connected to a gas source to supply purge gas to the outlet channel 3.

[0050] However, after the purge gas enters the gate valve through the outlet channel 3, the distribution concentration of the purge gas is related to the distance from the inlet channel 4. The closer the area is to the inlet channel 4, the higher the concentration of the purge gas in that area, and the greater the flow rate of the purge gas entering the lower gate valve; the farther the area is from the inlet channel 4, the lower the concentration of the purge gas in that area, and the smaller the flow rate of the purge gas entering the lower gate valve. Figure 3 When the gas inlet channel 4 is located slightly to the right of the gas purge device 1, the purge gas flow rate provided by the right-side gas outlet channel 3 to the chip transfer channel is greater than that provided by the left-side gas outlet channel 3. This results in uneven distribution of the purge gas provided by the gas outlet channel 3 to the chip transfer channel. The process gas in the process chamber will diffuse more into the area with less purge gas, causing particle deposition and corrosion on the gate valve.

[0051] To address the aforementioned technical issues caused by uneven purge gas distribution, the present disclosure provides an air intake structure 10 for use in semiconductor process equipment. This air intake structure 10 prevents the phenomenon of decreasing gas supply as distance from the air intake channel 130 increases. When applied to semiconductor process equipment, the present disclosure addresses the related art issues of particle deposition and gate valve corrosion caused by uneven purge gas distribution.

[0052] See also Figure 4 and Figure 5 The air intake structure 10 includes a flow guide assembly 200 and a base body 100. A uniform air cavity 120 is formed inside the base body 100, and gas can flow in the uniform air cavity 120. The base body 100 has an air intake channel 130 connected to the uniform air cavity 120 and a plurality of air outlet channels 110 connected to the uniform air cavity 120 and arranged along the first direction. For details, please refer to Figure 4 and Figure 5 The air inlet channel 130 is used to supply gas to the uniform air chamber 120, and the gas can leave the uniform air chamber 120 through the multiple air outlet channels 110. The flow guide component 200 is located in the uniform air chamber 120. The flow guide component 200 is located between the air inlet channel 130 and the multiple air outlet channels 110 and is used to guide the flow of gas in the uniform air chamber 120 to uniformly supply gas to the multiple air outlet channels 110.

[0053] It should be noted that the first direction can be Figure 9 and Figure 10 The x arrow in the figure points in the direction.

[0054] In an optional embodiment, the air inlet channel 130 is connected to a gas source (not shown in the figure), and the gas source can provide corresponding gas to the air inlet channel 130 .

[0055] The air intake structure 10 of the embodiment of the present application is provided with a flow guide assembly 200 within the air uniforming cavity 120. The flow guide assembly 200 guides the flow of gas within the air uniforming cavity 120, causing the gas within the air uniforming cavity 120 to flow evenly toward the multiple air outlet channels 110. Because the multiple air outlet channels 110 are arranged sequentially and spaced apart along the first direction, the gas flowing evenly toward the multiple air outlet channels 110 can be evenly distributed in the first direction, avoiding the phenomenon of less gas being provided as the distance from the air intake channel 130 decreases.

[0056] Furthermore, when the air intake structure 10 provided in the embodiment of the present disclosure is specifically applied to semiconductor process equipment, it can solve the technical problems of particle deposition and gate valve corrosion caused by uneven distribution of purge gas in the related art.

[0057] The air inlet channel 130 is located at the top of the air uniforming cavity 120 , and the multiple air outlet channels 110 are all located at the bottom of the air uniforming cavity 120 . The gas flows evenly from the top of the air uniforming cavity 120 to the bottom of the air uniforming cavity 120 .

[0058] The guide assembly 200 includes a guide plate 210, a connecting portion 220 and a plurality of guide columns 230. The guide plate 210 is located between the air inlet channel 130 and the plurality of air outlet channels 110 and extends along the first direction. The guide plate 210 is installed in the uniform air chamber 120 through the connecting portion 220, and the connecting portion 220 allows the guide plate 210 to rotate around the second direction with the connecting portion 220 as a fulcrum, wherein the second direction intersects with the first direction. Specifically, the second direction can be perpendicular to the first direction. It should be noted that the second direction can be Figure 9 and Figure 10 The direction indicated by the y arrow.

[0059] The guide plate 210 has a guide surface 211 and a connecting surface 212. The guide surface 211 faces the inlet channel 130. The gas provided by the inlet channel 130 flows toward the guide surface 211, guided by the guide surface 211, rather than directly flowing to the outlet channel 3 as in the related art where the gas provided by the inlet channel 4 flows. The connecting surface 212 faces the outlet channel 110. Each guide post 230 is connected to the connecting surface 212. The number of guide posts 230 is the same as the number of outlet channels 110 and is arranged in a one-to-one correspondence. The guide posts 230 are used to drive the guide posts 230 toward or away from the corresponding outlet channel 110 when the guide plate 210 rotates in the second direction.

[0060] In an optional embodiment, a connecting portion 220 is provided at the center of the guide surface 211, and the connecting portion 220 is connected to the inner wall surface of the base 100. The guide post 230 is used to drive the guide post 230 to approach or move away from the corresponding air outlet channel 110 when the guide plate 210 rotates about the second direction. That is, when the guide plate 210 rotates clockwise about the second direction, its right side swings downward to make the guide post 230 on the right side approach the corresponding air outlet channel 110, while the left side of the guide plate 210 swings upward to make the guide post 230 on the left side move away from the corresponding air outlet channel 110; when the guide plate 210 rotates counterclockwise about the second direction, its right side swings upward to make the guide post 230 on the right side move away from the corresponding air outlet channel 110, while the left side of the guide plate 210 swings downward to make the guide post 230 on the left side move toward the corresponding air outlet channel 110. When the gas distribution above the guide plate 210 (i.e., on one side of the guide surface 211) is uneven, the force on the guide surface 211 is uneven, causing the left and right sides of the guide plate 210 to swing up and down. Areas with more gas on the guide surface 211 exert a greater force on the guide surface 211, causing the guide plate 210 to swing downward; areas with less gas on the guide surface 211 exert a smaller force on the guide surface 211, causing the guide plate 210 to swing upward. The up and down swinging of the left and right sides of the guide plate 210 drives the guide posts 230 to move together. The upward swing of the guide plate 210 will drive the guide column 230 to move upward, so that the guide column 230 is away from the air outlet channel 110, resulting in the distance between the guide column 230 and its corresponding air outlet channel 110 becoming longer, and more gas will enter the air outlet channel 110; the downward swing of the guide plate 210 will drive the guide column 230 to move downward, so that the guide column 230 is close to the air outlet channel 110, resulting in the distance between the guide column 230 and its corresponding air outlet channel 110 becoming closer, and less gas will enter the air outlet channel 110.

[0061] In this embodiment, the guide plate 210 that can rotate about the second direction and the guide column 230 located below the guide plate 210 cooperate to balance the gas flow through the outlet channel 110 closer to the air inlet channel 130 and the outlet channel 110 farther from the air inlet channel 130. The area with more gas distribution on the guide surface 211 will exert a greater force on the guide surface 211, causing the guide plate 210 below the area to swing downward, thereby driving the guide column 230 to move downward, so that the guide column 230 is close to the outlet channel 110, resulting in the distance between the guide column 230 and its corresponding outlet channel 110 becoming closer, and less gas will enter the outlet channel 110; the area with less gas on the guide surface 211 will exert a smaller force on the guide surface 211, causing the guide plate 210 below the area to swing upward, thereby driving the guide column 230 to move upward, so that the guide column 230 is away from the outlet channel 110, resulting in the distance between the guide column 230 and its corresponding outlet channel 110 becoming farther, and more gas will enter the outlet channel 110. As a result, the gas output of the gas outlet channel 110 farther from the gas inlet channel 130 is basically the same as the gas output of the gas outlet channel 110 closer to the gas inlet channel 130. At the same time, since the gas is gathered in the middle area, the gas output of the central area is also guaranteed.

[0062] It should be noted that the embodiment of the present application does not limit the specific location of the air intake channel 130, for example, it can be located on the right side, left side, or in the middle of the connecting portion 220. Therefore, those skilled in the art can adjust the location according to actual conditions.

[0063] In some embodiments, when the guide plate 210 is in a horizontal state, the axis of the guide post 230 is collinear with the axis of the corresponding air outlet channel 110 .

[0064] Each guide column 230 includes a first end face facing the gas outlet channel 110 , and the area of ​​the first end face is smaller than the area of ​​the corresponding gas outlet channel 110 , which can limit the gas outlet volume passing through the gas outlet channel 110 without excessively limiting the gas outlet volume.

[0065] The guide post 230 includes a second end surface connected to the connection surface 212. The cross-sectional area of ​​the guide post 230 gradually decreases from the first end surface to the second end surface, thereby reducing the resistance to gas in the portion of the guide post 230 near the guide plate 210, allowing the gas to diffuse toward the central area of ​​the connection surface 212. The guide post 230 is smaller at the top and larger at the bottom, which not only allows the gas to flow further in the diffusion direction but also limits the gas output from the corresponding outlet channel 110. It is understood that the first end surface and the second end surface are arranged in opposite directions.

[0066] In other embodiments, the cross-sectional area of ​​the guide column 230 may be equal from the first end surface to the second end surface. In other words, the guide column 230 is a cylindrical structure for ease of processing.

[0067] The guide plate 210 has two end surfaces in its extension direction. The distances between the two end surfaces and the inner wall surface of the base 100 at corresponding positions are the same, so that the gas flow rates on the left and right sides of the guide plate 210 are equal.

[0068] In an optional embodiment, the connecting portion 220 includes a first connecting shaft 140, a second connecting shaft 221, and an annular structure 222. The first connecting shaft 140 is fixedly connected to the base 100, and the first connecting shaft 140 extends along the second direction. One end of the second connecting shaft 221 is fixedly connected to the center of the guide surface 211, and the other end of the second connecting shaft 221 is fixedly connected to the annular structure 222. The annular structure 222 is sleeved on the first connecting shaft 140 so that the annular structure 222 can rotate around the first connecting shaft 140. For details, please refer to Figure 5 and Figure 6 .

[0069] The air intake structure 10 also includes a limiter 300, which is located on both sides of the connecting portion 220 along the first direction, and the limiter 300 and the air intake channel 130, respectively. The limiter 300 is used to limit the angle of the guide plate 210 when it rotates around the second direction, so as to avoid the uneven distribution of gas in multiple air outlet channels 110 due to the guide column 230 being too far or too close to the corresponding air outlet channel 110, or to avoid the gas flow provided in the air intake channel 130 being too large, causing the guide plate 210 to rotate at a large angle so as to contact the inner wall surface of the base 100, thereby causing the gas to concentrate in the area close to the air intake channel 130 and unable to flow to the area away from the air intake channel 130.

[0070] The limiting member 300 is fixedly arranged on the inner wall of the base 100, which is explained below in combination with the drawings. It should be noted that the structure in the drawings is only a schematic illustration and does not specifically limit the structure in this embodiment. Other structures derived therefrom are also within the scope of protection of the present invention.

[0071] Example 1

[0072] See also Figures 7 to 11 In this embodiment, the limiting member 300 is directly fixed to the inner wall surface of the base 100 .

[0073] In one embodiment, the fixed end of the limiting member 300 is connected to the base 100 and is located in the air uniforming cavity 120 , and the free end faces the guide surface 211 . The limiting member 300 is located above the guide plate 210 .

[0074] Example 2

[0075] See also Figures 12 to 14 In this embodiment, the limiting member 300 is indirectly fixedly connected to the inner wall surface of the base 100 through the crossbeam member 400.

[0076] In a specific embodiment, the air intake structure 10 also includes a limit member 300 and a cross beam member 400, both of which are located above the guide plate 210. One end of the cross beam member 400 is connected to the first connecting shaft 140 and extends along the first direction. The fixed end of the limit member 300 is connected to the side of the cross beam member 400 facing the guide surface 211, and the free end of the limit member 300 faces the guide surface 211.

[0077] The present invention also provides a semiconductor process equipment, which includes at least two adjacent chambers, a gate valve and the air intake structure 10 of the above embodiment. The gate valve has a wafer transfer channel, which is used for wafers to pass through. The gate valve is arranged between two adjacent chambers, and the gate valve is used to selectively connect or disconnect the two chambers so that the two chambers can transfer wafers through the wafer transfer channel when connected, or disconnect the two chambers so that one of the chambers can perform process treatment. For example, the two chambers include a transfer chamber and a process chamber, and the robot in the transfer chamber is used to transfer the wafer to the process chamber through the gate valve to perform process treatment on the wafer. After the process treatment, the wafer is transferred from the process chamber to the transfer chamber by the robot.

[0078] In an optional embodiment, the gate valve includes a gate valve body and a door plate. The door plate can be set on one side of the gate valve body through a lifting assembly. The door plate is used to selectively rise or fall under the drive of the lifting assembly to selectively connect or shut off the two chambers.

[0079] The air intake structure 10 is located above the gate valve and is used to purge the gate valve.

[0080] In the semiconductor process equipment of the embodiment of the present application, the base 100 of the air inlet structure 10 is located above the gate valve, and a flow guide component 200 is provided in the uniform air cavity 120 of the base 100. The flow guide component 200 guides the flow of gas in the uniform air cavity 120 so that the gas in the uniform air cavity 120 flows evenly to the multiple outlet channels 110. Since the multiple outlet channels 110 are arranged sequentially and at intervals along a first direction, the gas flowing evenly to the multiple outlet channels 110 can be evenly distributed along the first direction above the transmission channel, avoiding the phenomenon that the outlet channels 110 farther away from the air inlet channel 130 provide less gas, thereby solving the technical problems of particle deposition and gate valve corrosion caused by uneven gas distribution in the related art.

[0081] In an optional embodiment, the air intake structure 10 is used to supply gas to the gate valve when the gate valve closes the two chambers. In another optional embodiment, the air intake structure 10 is used to supply gas to the gate valve when the gate valve connects the two chambers and a wafer passes through the wafer transfer channel, so as to purge the wafer during transfer and further prevent the wafer from being contaminated by particles.

[0082] The semiconductor process equipment in this embodiment can be specifically used to perform an epitaxial process, but the present disclosure is not limited thereto.

[0083] It should be noted that the air intake structure 10 provided in the present application is not only suitable for purging gate valves, but can also be applied to other air intake structures in semiconductor equipment that need to achieve uniform air outlet.

[0084] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0085] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections, or mutual communication; direct connections or indirect connections through an intermediate medium; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0086] In the description of the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature includes the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0087] Throughout this specification, reference to terms such as "one embodiment," "certain embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, illustrative descriptions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0088] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An air intake structure for semiconductor process equipment, characterized in that: The air intake structure includes a flow guide component and a base body with an air uniformity cavity formed therein; wherein, The flow guide component is located in the gas uniformity cavity; The base body has an air inlet channel communicating with the air uniforming cavity and a plurality of air outlet channels communicating with the air uniforming cavity and arranged along a first direction; The air inlet channel is used to provide gas to the gas homogenizing cavity; The flow guide component is located between the air inlet channel and the plurality of air outlet channels, and is used to guide the flow of the gas in the gas uniformity chamber to uniformly provide the gas to the plurality of air outlet channels.

2. The air intake structure according to claim 1, characterized in that: The air inlet channel is located at the top of the air uniformity cavity, and the plurality of air outlet channels are all located at the bottom of the air uniformity cavity; The flow guide assembly includes: a guide plate, located between the air inlet channel and the plurality of air outlet channels and extending along the first direction, the guide plate having a guide surface facing the air inlet channel and a connecting surface facing the air outlet channel; a connecting portion, wherein the guide plate is mounted in the air-distributing cavity via the connecting portion, and wherein the guide plate is capable of rotating about a second direction with the connecting portion as a fulcrum, wherein the second direction intersects the first direction; Multiple guide columns, each of which is connected to the connecting surface, the number of the guide columns is the same as the number of the air outlet channels and is arranged one-to-one, and when the guide plate rotates around the second direction, the guide columns are driven to move closer to or away from the corresponding air outlet channels.

3. The air intake structure according to claim 2, characterized in that: When the guide plate is in a horizontal state, the axis of the guide column is collinear with the axis of the corresponding air outlet channel.

4. The air intake structure according to claim 2 or 3, characterized in that: Each of the guide columns includes a first end surface facing the air outlet channel, and an area of ​​the first end surface is smaller than an area of ​​the corresponding air outlet channel.

5. The air intake structure according to claim 4, characterized in that: The guide column includes a second end surface connected to the connection surface, and the cross-sectional area of ​​the guide column gradually decreases from the first end surface to the second end surface.

6. The air intake structure according to claim 2, characterized in that: The guide plate has two end surfaces located in its extension direction, and the distances between the two end surfaces and the inner wall surface of the base at corresponding positions are the same.

7. The air intake structure according to claim 2, characterized in that: Also includes: A limiter, whose fixed end is connected to the base and located in the air uniforming cavity, and whose free end faces the guide surface. The limiter is located above the guide plate, and the limiter and the air inlet channel are respectively located on both sides of the connecting portion along the first direction.

8. The air intake structure according to claim 2, characterized in that: The connecting portion includes a first connecting shaft, a second connecting shaft and an annular structure; The first connecting shaft is fixedly connected to the base, and the first connecting shaft extends along the second direction; One end of the second connecting shaft is fixedly connected to the center of the guide surface, and the other end of the second connecting shaft is fixedly connected to the annular structure; The annular structure is sleeved on the first connecting shaft so that the annular structure can rotate around the first connecting shaft.

9. The air intake structure according to claim 8, characterized in that: It also includes a limiter and a crossbeam, both of which are located above the deflector plate, wherein one end of the crossbeam is connected to the first connecting shaft and extends along the first direction, the fixed end of the limiter is connected to the side of the crossbeam facing the deflector surface, and the free end of the limiter faces the deflector surface; The limiting member and the air inlet passage are respectively located on two sides of the connecting portion along the first direction.

10. A semiconductor process equipment, characterized in that: The air intake structure comprises at least two adjacent chambers, a gate valve, and the air intake structure according to any one of claims 1 to 9, wherein the gate valve is provided between the two adjacent chambers, and the gate valve is used to selectively connect or shut off the two chambers; The air intake structure is located above the gate valve and is used to purge the gate valve.

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