Cleaning method and semiconductor device

Abstract

The invention provides a cleaning method and a semiconductor device, the semiconductor device comprises a transmission chamber, a sucking pump set and a high-pumping-speed pump, the sucking pump set and the high-pumping-speed pump are used for vacuumizing the transmission chamber, and the cavity wall of the transmission chamber is provided with an air outlet and a plurality of inflation ports. The distribution mode of the gas outlet and the plurality of gas charging ports is configured to enable each corner area of the transmission chamber to be purged by gas; the pumping speed of the sucking pump set is lower than that of the high-pumping-speed pump. On the premise that the same pressure is maintained, when air is inflated into the transmission cavity, the air inflow of the transmission cavity is large, the situation that particles are accumulated due to the fact that corner areas in the transmission cavity become dead corners is avoided, the purging effect and the cleanliness of the transmission cavity are improved, and the process quality and the product yield are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a cleaning method and semiconductor equipment. Background Art

[0002] In semiconductor equipment, the transfer chamber is the essential path for wafers to travel between process chambers. During wafer transport, the transfer chamber is directly connected to the process chamber. To prevent reactive gases from the process chamber from flowing into the transfer chamber and reacting there, potentially contaminating the transfer chamber, the transfer chamber must be maintained in a vacuum state, and the pressure in the transfer chamber must be higher than that in the process chamber.

[0003] As semiconductor process requirements continue to increase, the vacuum level required in process chambers is becoming increasingly demanding. Therefore, to avoid a significant pressure differential between the transfer chamber and the process chamber, which could cause a large amount of gas in the transfer chamber to flow into the process chamber when transferring wafers to the process chamber, leading to condensation, the transfer chamber should also be controlled at a relatively low pressure. However, in existing semiconductor equipment, a low pressure in the transfer chamber affects the purge efficiency, leading to an increase in particles in the transfer chamber and low cleanliness. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art and proposes a cleaning method and semiconductor equipment.

[0005] In order to achieve the purpose of the present invention, a semiconductor device is provided, which includes a transfer chamber, an exhaust pump group and a high-speed pump. The cavity wall of the transfer chamber is provided with an outlet and multiple air charging ports, the multiple air charging ports are connected to a gas source, and the air outlet and the multiple air charging ports are distributed in a manner so that each corner area of ​​the transfer chamber can be purged with gas; the exhaust pump group and the high-speed pump can both extract the gas in the transfer chamber from the exhaust port to vacuum the transfer chamber; the exhaust speed of the exhaust pump group is lower than the exhaust speed of the high-speed pump. When the exhaust pump group vacuums the transfer chamber until the pressure of the transfer chamber reaches a preset threshold, the high-speed pump is operated, and the high-speed pump can vacuum the transfer chamber until the pressure of the transfer chamber reaches a set value, and the set value is less than the preset threshold.

[0006] In some possible embodiments, the vacuum pump assembly includes a vacuum pump, and the vacuum port of the vacuum pump is connected to the exhaust port of the high-speed pump through a vacuum pipeline.

[0007] In some possible embodiments, the semiconductor device further includes a plurality of air intake control devices corresponding one-to-one to the plurality of air filling ports, and the air intake control devices are used to adjust the gas flow rate entering the corresponding air filling ports.

[0008] In some possible embodiments, each inflation port is connected to an air source through an inflation pipeline;

[0009] The air intake control device includes a mass flow controller provided on the air charging pipeline, and the mass flow controller is used to control the gas flow on the corresponding air charging pipeline;

[0010] Alternatively, the air intake control device includes a pressure controller and a flow regulating valve arranged on the inflation pipeline, the pressure controller is used to control the gas pressure on the corresponding inflation pipeline, and the flow regulating valve is used to adjust the gas flow of the corresponding inflation pipeline.

[0011] In some possible embodiments, the cross-sectional shape of the transmission chamber is an axisymmetric figure, the multiple inflation ports are symmetrically distributed with the central axis of the transmission chamber as the axis of symmetry, and the gas outlets are symmetrically arranged about the axis of symmetry.

[0012] In some possible embodiments, the semiconductor device further includes a plurality of process chambers corresponding one-to-one to the plurality of inflation ports, the plurality of process chambers are connected to the transfer platform, each process chamber is connected to the transfer chamber through a wafer transfer channel, a gate valve is provided on the wafer transfer channel, the gate valve is used to control the conduction or cutoff of the wafer transfer channel, the wafer transfer channel has a wafer transfer port formed on the transfer chamber, and the inflation port is arranged near the wafer transfer port of the wafer transfer channel connected to the corresponding process chamber.

[0013] In some possible embodiments, the semiconductor device further includes a loading chamber, which is arranged on the peripheral side of the transfer chamber. The loading chamber is used to transfer wafers in or out of the atmospheric environment, and the air outlet is arranged close to the loading chamber; all the air inlets are arranged on the side of the air outlet away from the loading chamber.

[0014] As another technical solution, the present invention further provides a cleaning method, which is applied to any of the above-mentioned semiconductor devices of the present invention, and the cleaning method comprises:

[0015] The transfer chamber is evacuated by the vacuum pump group until the pressure of the transfer chamber reaches a preset threshold;

[0016] The transmission chamber is evacuated by a high-speed pump until the pressure in the transmission chamber reaches a set value;

[0017] Gas is provided to the plurality of gas filling ports to fill the transfer chamber with gas, so that each corner area of ​​the transfer chamber can be purged with gas.

[0018] In some possible embodiments, when the semiconductor device includes a plurality of gas intake control devices corresponding one-to-one to the plurality of gas filling ports, and the plurality of gas filling ports are in close proximity to the film transfer ports of the film transfer channels corresponding to the plurality of process chambers;

[0019] Supplying gas to the plurality of gas charging ports to inflate the transfer chamber so that each corner area of ​​the transfer chamber can be purged by the gas, specifically comprising: supplying gas to the plurality of gas charging ports to inflate the transfer chamber so that each corner area of ​​the transfer chamber can be purged by the gas, until the pressure of the transfer chamber reaches a target pressure value;

[0020] Furthermore, after the pressure of the transmission chamber reaches the target pressure value, the cleaning method further includes:

[0021] When the film transfer channel corresponding to any process chamber is connected, the gas flow rate entering the gas filling port corresponding to the process chamber is controlled to be greater than the gas flow rate entering other gas filling ports, and the pressure of the transfer chamber is maintained at the target pressure value.

[0022] In some possible embodiments, inflating the transmission chamber until the pressure of the transmission chamber reaches a target pressure value specifically includes:

[0023] Filling the transmission chamber with gas at a preset flow rate;

[0024] determining a current pressure in the transfer chamber;

[0025] Determine whether the current pressure reaches the target pressure value;

[0026] If not, the gas flow rate into the plurality of gas filling ports is adjusted, and the current pressure of the transmission chamber is determined back.

[0027] In some possible embodiments, the preset flow rate value is greater than or equal to 10 sccm and less than or equal to 1000 sccm.

[0028] The present invention has the following beneficial effects:

[0029] The semiconductor device provided by the present invention utilizes an exhaust pump assembly and a high-speed pump to first roughly evacuate the transfer chamber using the exhaust pump assembly to achieve a low vacuum level, and then uses the high-speed pump to evacuate the transfer chamber to achieve a high vacuum level. When the transfer chamber is inflated to the same pressure, the air intake volume of the transfer chamber in this embodiment is greater than that of the transfer chamber in the related art, thereby increasing the gas flow rate for purging the transfer chamber. This improves the purging effect and, in turn, enhances the cleanliness of the transfer chamber, thereby increasing process quality and product yield.

[0030] Moreover, the distribution of the air outlet and the multiple air filling ports in this embodiment is configured so that each corner area of ​​the transmission chamber can be purged with gas, so as to prevent each corner area from forming a dead corner as much as possible. This is conducive to preventing the corner areas in the transmission chamber from becoming dead corners and accumulating particles, thereby greatly improving the cleanliness of the transmission chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of a module of a semiconductor device in the related art;

[0032] Figure 2 It is a structural schematic diagram of a semiconductor device in the related art;

[0033] Figure 3 for Figure 2 A schematic structural diagram of a pressure control system in a semiconductor device of the related art is shown;

[0034] Figure 4 for Figure 1 A schematic diagram of filling a transfer chamber in a semiconductor device of the related art is shown;

[0035] Figure 5 for Figure 4 Schematic diagram of airflow simulation in a transfer chamber of a semiconductor device shown;

[0036] Figure 6 A schematic structural diagram of a semiconductor device according to an embodiment of the present application;

[0037] Figure 7 A schematic diagram of a module of a semiconductor device according to an embodiment of the present application;

[0038] Figure 8 A schematic diagram of a module of a semiconductor device according to another embodiment of the present application;

[0039] Figure 9 for Figure 7 Schematic diagram of airflow simulation in a transfer chamber of a semiconductor device shown;

[0040] Figure 10 A schematic flow chart of a cleaning method according to an embodiment of the present application.

[0041] Description of reference numerals:

[0042] 100-Semiconductor equipment;

[0043] 10- Equipment front-end module;

[0044] 20-loading chamber;

[0045] 30 - transfer chamber; 301 - air outlet; 302 - charging port; 31 - vacuum pump; 32 - high-speed pump; 33 - charging pipeline; 34 - exhaust pipeline; 35 - air intake control device; 351 - mass flow controller; 352 - flow regulating valve; 36 - flow regulating valve; 37 - gate valve; 38 - control valve;

[0046] 40-process chamber;

[0047] 50-Transmission platform. DETAILED DESCRIPTION

[0048] Figure 1 FIG1 shows a module of a semiconductor device in the related art. Figure 1 The semiconductor device 100a includes an equipment front end module (EFEM) 10a, a loading chamber (LL) 20a, a transfer chamber (TC) 30a, and a process module (PM) 40a. The transfer chamber 30a is responsible for transferring the wafer to the process chamber 40a and is the only way for the wafer to be transferred between the process chambers 40a. During the wafer transfer process, the transfer chamber 30a is directly connected to the process chamber 40a. In order to prevent the reaction gas in the process chamber 40a from flowing into the transfer chamber 30a and reacting in the transfer chamber 30a, causing contamination of the transfer chamber 30a, the transfer chamber 30a needs to be maintained in a vacuum state, and the pressure of the transfer chamber 30a needs to be higher than the pressure of the process chamber 40a.

[0049] Figure 2 The structure of a semiconductor device in the related art is shown. Figure 2 Slit valves (SV) 37a are provided between the front-end module 10a of the equipment and the loading chamber 20a, between the loading chamber 20a and the transfer chamber 30a, and between the transfer chamber 30a and the process chamber 40a, so that the front-end module 10a of the equipment, the loading chamber 20a, the transfer chamber 30a and the process chamber 40a are independent of each other, and the pressure inside each part can be regulated separately to avoid mutual influence.

[0050] Figure 3 for Figure 2 The schematic diagram of the pressure control system in the semiconductor device of the related art is shown. Figure 3 The pressure control system for transfer chamber 30a specifically includes a gas source 38a, a gas charging line 33a, an exhaust line 34a, and a vacuum pump 31a, which is specifically a dry pump. Before processing, the pressure control system generally operates as follows: vacuum pump 31a is turned on, evacuating exhaust line 34a through vacuum pump 31a. The vacuum pump 31a then evacuates transfer chamber 30a through exhaust line 34a, reducing the pressure in transfer chamber 30a to a vacuum state. Gas source 38a is then turned on, charging gas into transfer chamber 30a through gas charging line 33a, increasing the pressure in transfer chamber 30a until the pressure in transfer chamber 30a exceeds the pressure in process chamber 40a.

[0051] It can be understood that the pressure of the transmission chamber 30a satisfies the following formula (1), wherein, P g is the pressure of the transmission chamber 30a, P j is the ultimate pressure of the vacuum pump 31 a , Q is the gas flow rate delivered by the gas source 38 a to the transmission chamber 30 a , and S is the pumping speed of the vacuum pump 31 a .

[0052] P g =P j +Q / S formula (1)

[0053] According to formula (1), it can be concluded that the gas flow rate Q delivered from the gas source 38a to the transmission chamber 30a satisfies the following formula (2).

[0054] Q=(P g -P j )*S formula (2)

[0055] According to formula (2), the gas flow rate Q delivered by the gas source 38a to the transmission chamber 30a and the pressure P of the transmission chamber 30a are g and the pumping speed S of the vacuum pump 31a. Thus, as the vacuum degree requirement of the process chamber 40a becomes higher and higher, the pressure setting of the process chamber 40a becomes lower and lower. On this basis, in order to avoid an excessive pressure difference between the transfer chamber 30a and the process chamber 40a, the pressure of the transfer chamber 30a should also be set to a smaller value, which in turn results in a smaller gas flow rate Q delivered from the gas source 38a to the transfer chamber 30a. Since the gas flow rate Q is small, in order to ensure the flow rate of the gas entering the transfer chamber 30a, as shown in FIG. Figure 1 As shown, the transmission chamber 30a is provided with only one inflation port 302a and one outlet port 301a, and the outlet port 301a and the inflation port 302a are respectively provided at both ends of the transmission chamber 30a along the LL direction. At this time, the airflow direction in the transmission chamber 30a is Figure 4 Indicated by arrows, Figure 4 for Figure 1 FIG2 is a schematic diagram of the gas filling of the transfer chamber in a semiconductor device of the related art, wherein the LL direction is the arrangement direction of the device front-end module 10a, the loading chamber 20a and the transfer chamber 30a.

[0056] The inventors of this application have conducted a large number of simulation experiments on the transmission chamber 30a and obtained the following airflow simulation results for the transmission chamber 30a: Figure 5 As shown, Figure 5 for Figure 4 The schematic diagram of the airflow simulation in the transfer chamber of the semiconductor equipment is shown in FIG. Figure 5It can be seen that since the gas flow rate near the filling port 302a is fast and the gas flow rate away from the filling port 302a is slow, the gas filled into the transmission chamber 30a is unevenly distributed, the gas flow rate near the filling port 302a is large and the gas flow rate away from the filling port 302a is small, which will cause the air flow to have a poor purge effect on the end of the transmission chamber 30a where the gas outlet 301a is located, and there will be a dead corner area in the transmission chamber 30a (specifically, Figure 4 As a result, particles on the surface of the wafer transferred from the process chamber 40a to the transfer chamber 30a, by-products generated by the process, and particles generated by wear of the robot in the transfer chamber 30a are easily accumulated on one end of the transfer chamber 30a where the air outlet 301a is located and in the dead corner area, resulting in low cleanliness of the transfer chamber 30a, which will have an adverse effect on the subsequent process quality.

[0057] In addition, please continue to refer to Figure 5 Because the gas filling the transfer chamber 30a is unevenly distributed, there is also the problem of uneven airflow at the connection point between the transfer chamber 30a and each process chamber 40a, that is, the pressure difference between the transfer chamber 30a and each process chamber 40a is inconsistent. This will cause airflow disturbances in the transfer chamber 30a when transferring wafers between different process chambers 40a. The disturbed airflow will drive particles to deposit on the wafer surface. Moreover, due to the uneven airflow, the number of particles deposited on the surfaces of wafers transferred to different process chambers 40a is also different, which in turn leads to inconsistent process quality of wafers processed in different process chambers 40a, resulting in low process quality consistency.

[0058] In view of this, the present invention provides a cleaning method and semiconductor device. To enable those skilled in the art to better understand the technical solution of the present invention, the cleaning method and semiconductor device provided by the present invention are described in detail below with reference to the accompanying drawings.

[0059] Figure 6 The structure of a semiconductor device according to an embodiment of the present application is shown. Figure 7 FIG1 shows a module of a semiconductor device according to an embodiment of the present application. Figure 6 and Figure 7The semiconductor device 100 includes a front-end module 10, a loading chamber 20, a transfer platform (Transfer Module, TM) 50, a transfer chamber 30, and six process chambers 40. The front-end module 10, the loading chamber 20, and the transfer platform 50 are sequentially connected. The transfer chamber 30 is disposed on the transfer platform 50. Each process chamber 40 is connected to the transfer platform 50. The loading chamber 20 is used to transfer wafers in or out of the atmosphere. The loading chamber 20 and each process chamber 40 are arranged along the circumference of the transfer platform 50. The cross-section of the transfer chamber 30 is polygonal.

[0060] The semiconductor device 100 can be an etching device or a deposition device such as a CVD or PECVD device. When the semiconductor device 100 is an etching device, the process gas introduced into the process chamber 40 is used for etching, and the etching device can perform either a plasma etching process or a free radical etching process. When the semiconductor device 100 is an etching device, the etching device can be located in a clean room to isolate the etching device from other devices and prevent contamination of wafers by other devices.

[0061] The semiconductor device 100 also includes a pressure control system for the transfer chamber 30. The transfer chamber 30 has a gas outlet 301 and six gas charging ports 302 formed on its wall. The pressure control system is used to regulate the pressure in the transfer chamber 30. It is understood that the number of process chambers 40 and the number of gas charging ports 302 are not limited to the above numbers and can be designed based on specific needs and actual operating conditions.

[0062] The pressure control system specifically includes a gas source disposed outside the transfer chamber 30. The gas source is connected to each of the gas charging ports 302 via a gas charging line 33. The gas source is used to deliver clean gas into the transfer chamber 30. The clean gas can be an inert gas such as nitrogen (N2) or argon (Ar), or compressed dry air (CDA).

[0063] The pressure control system also includes an air pump group and a high-speed pump 32. Both the air pump group and the high-speed pump 32 are capable of extracting gas from the transfer chamber 30 through the gas outlet 301 to evacuate the transfer chamber 30. The pumping speed of the air pump group is lower than that of the high-speed pump 32. The air pump group is capable of evacuating the transfer chamber 30 until the pressure in the transfer chamber 30 reaches a preset threshold value, which is the starting pressure of the high-speed pump 32. In other words, when the air pump group evacuates the transfer chamber 30 until the pressure in the transfer chamber 30 reaches the preset threshold value, the high-speed pump 32 can operate and evacuate the transfer chamber 30 until the pressure in the transfer chamber 30 reaches a set value, which is less than the preset threshold value, so that the transfer chamber 30 can reach a higher vacuum level.

[0064] It should be understood that before transferring the wafer to the process chamber 40 , the pressure control process of the transfer chamber 30 of the semiconductor device 100 of this embodiment is as follows:

[0065] Vacuuming step: The vacuum pump assembly is activated to evacuate the transfer chamber 30, and the pressure in the transfer chamber 30 is reduced until the pressure in the transfer chamber 30 reaches a preset threshold. The high-speed pump 32 is activated to evacuate the transfer chamber 30, and the pressure in the transfer chamber 30 is further reduced until the pressure in the transfer chamber 30 reaches the set value.

[0066] Inflation step: The air source inflates the transmission chamber 30, and the pressure of the transmission chamber 30 is increased until the pressure P of the transmission chamber 30 reaches g The target pressure is reached. The target pressure is greater than the pressure of the process chamber 40, and the difference between the target pressure and the pressure of the process chamber 40 is sufficient to prevent an excessive pressure difference between the transfer chamber 30 and the process chamber 40. For example, the pressure of the process chamber 40 may be 20 mTorr, and the target pressure may be 40 mTorr.

[0067] The semiconductor device 100 of this embodiment is provided with an exhaust pump group and a high-speed pump 32. The exhaust pump group is used to roughly exhaust the transfer chamber 30 to achieve a low vacuum level in the transfer chamber 30. The high-speed pump 32 is then used to exhaust the transfer chamber 30 to achieve a high vacuum level in the transfer chamber 30. Combining the above formula (II), it can be seen that the pressure P in the transfer chamber 30 is g Under the same premise, that is, the pressure P of the transmission chamber 30 of this embodiment is g and the pressure P of the transmission chamber 30a in the related art g When the target pressure values ​​are reached, since the high-speed pump 32 in this embodiment has a high pumping speed, the gas flow rate Q delivered by the gas source to the transmission chamber 30 in this embodiment is larger, which increases the gas flow rate for purging the transmission chamber 30. This is beneficial to improving the purging effect, and further has a beneficial effect on improving the cleanliness of the transmission chamber 30, thereby improving the process quality and product yield.

[0068] It is worth noting that Figure 1 Compared with the related technologies shown in the figure, since the air intake volume of the transmission chamber 30 of this embodiment is larger when air is injected into the transmission chamber 30 under the condition of achieving the same pressure (i.e., the target pressure value), it can still ensure that the air intake volume of each inflation port 302 is large. In this way, under the premise that the cross-sectional area of ​​the inflation port 302 is the same, it can be ensured that the flow rate of the gas entering each inflation port 302 will not be too small.

[0069] Specifically, taking the target pressure value as 40 mTorr as an example, the vacuum pump 31 is set to be a dry pump, and the pressure P of the transmission chamber 30 in the related art is gMaintaining the ultimate pressure P of the dry pump at 40mTorr j =20mTorr, then the air intake volume Q1 of the transmission chamber 30a in the related art is 2×S1, where S1 is the pumping speed of the dry pump. When the pumping speed S2 of the high-speed pump 32 of this embodiment is 2-3 times the pumping speed S1 of the dry pump, the pressure P of the transmission chamber 30 is reduced. g The ultimate pressure P of the high-speed pump 32 is maintained at 40 mTorr. j Assuming XmTorr, X is much less than 20, the air intake volume Q2 of the transfer chamber 30 in this embodiment is (40-X)×S2, so the air intake volume Q2 of the transfer chamber 30 in this embodiment exceeds the air intake volume Q1 of the transfer chamber 30a in the related art by 4-6 times. g Under the same conditions, in this embodiment, the gas flow rate Q delivered from the gas source to the transmission chamber 30 is increased, and the purging effect is improved.

[0070] As disclosed herein, the semiconductor device 100 can implement the high-speed pump 32 using a molecular pump, a cold pump, a Roots pump, or a dry pump with a high pumping speed. This embodiment does not impose any specific limitations on the location of the high-speed pump 32. For example, if the semiconductor device 100 is an etching device, the high-speed pump 32 can be located on the floor of the clean room. Alternatively, the high-speed pump 32 can be located on the transfer platform 50.

[0071] It should also be noted that, based on the increased gas flow rate Q delivered to the transfer chamber 30, the distribution of the gas outlet 301 and the plurality of gas filling ports 302 in the semiconductor device 100 of this embodiment is configured so that each corner region of the polygonal transfer chamber 30 can be purged with gas (i.e., each corner region of the transfer chamber 30 can be covered by the gas flow field), thereby minimizing the formation of dead corners in each corner region. This helps prevent the corner regions within the transfer chamber 30 from becoming dead corners and accumulating particles, greatly improving the cleanliness of the transfer chamber 30 and ensuring process quality and product yield.

[0072] As a feasible approach, Figure 6 As shown, the transfer chamber 30 is provided with an air outlet 301. The air pump assembly includes a vacuum pump 31. The air outlet of the vacuum pump 31 is connected to the exhaust port of the high-speed pump 32 via an air extraction pipeline 34. In other words, the vacuum pump 31 and the high-speed pump 32 are connected in series. The vacuum pump 31 can not only perform rough pumping on the transfer chamber 30, but also serve as an exhaust pump for the high-speed pump 32 when the vacuum pump 31 evacuates the transfer chamber 30 until the pressure in the transfer chamber 30 reaches a preset threshold (i.e., the starting pressure of the high-speed pump 32).

[0073] As another feasible embodiment, the transfer chamber 30 is provided with two gas outlets 301. The gas extraction pump assembly includes a vacuum pump 31. The vacuum pump 31 extracts gas from the transfer chamber 30 through one of the two gas outlets 301. The high-speed pump 32 extracts gas from the transfer chamber 30 through the other of the two gas outlets 301. In other words, the vacuum pump 31 and the high-speed pump 32 are connected in parallel.

[0074] Regardless of whether the vacuum pump 31 is connected in series or in parallel with the high-speed pump 32, the vacuum pump 31 can be implemented using a dry pump. When the vacuum pump 31 is a dry pump, a dry pump with a limit vacuum degree ranging from 0.01 Torr to 0.001 Torr can be used. It should be understood that in this embodiment, the limit pressure of the vacuum pump 31 only needs to reach the starting pressure of the high-speed pump 32, that is, the vacuum degree of the vacuum pump 31 can be lower, and a small dry pump can be used for the vacuum pump 31, which is conducive to reducing equipment costs. In addition, since the small dry pump is smaller in size, the installation space occupied by the small dry pump is correspondingly smaller, so the vacuum pump 31 can be integrated on the transmission platform 50 without taking up additional space, which can also improve the structural compactness of the semiconductor device 100. Of course, in other examples, the vacuum pump 31 can also be set on the bottom plate of the clean room.

[0075] In other embodiments not shown in the figures of the present application, the vacuum pump group may also include multiple vacuum pumps 31, and each vacuum pump 31 is started in sequence to vacuum the transfer chamber 30 step by step.

[0076] For example, a high-speed pump 32 may be used with a starting pressure ranging from 0.1 Torr to 1 Torr. Accordingly, the preset threshold may be greater than or equal to 0.1 Torr and less than or equal to 1 Torr. The starting pressure of the high-speed pump 32 is higher than the ultimate vacuum level of the vacuum pump 31. In the semiconductor device 100 disclosed herein, the preferred range of the set value is 0.0001 Torr to 0.000001 Torr.

[0077] As disclosed in the semiconductor device 100, the transfer platform 50 is polygonal and the transfer platform 50 and the transfer chamber 30 are axially symmetrical. The arrangement of the gas outlets 301 and the gas filling ports 302 is as follows: the multiple gas filling ports 302 are symmetrically distributed with the central axis of the transfer chamber 30 as the symmetry axis, and the gas outlets 301 are also symmetrically arranged with respect to the symmetry axis. For example, Figure 7 In the example shown, the transport platform 50 is rectangular, for example, and there are six air inlets 302 and one air outlet 301. The six air inlets 302 are symmetrical with the central axis of the rectangular transport platform 50 ( Figure 7 The center of the air outlet 301 is located on the symmetry axis O1-O1. Figure 8A module of a semiconductor device according to another embodiment of the present invention is shown. Figure 8 In the example shown, the transmission platform 50 is, for example, a regular hexagon, and the transmission chamber 30 is correspondingly a regular hexagon. There are four gas inlets 302 and two gas outlets 301. The four gas inlets 302 are symmetrical with the central axis of the regular hexagonal transmission chamber 30 ( Figure 8 As shown in FIG, the two gas outlets 301 are symmetrically distributed about O2-O2.

[0078] As described above, while maintaining the same pressure (i.e., the target pressure value), the transfer chamber 30 of this embodiment has a greater gas intake volume during gas injection. Furthermore, this embodiment further improves the uniformity of gas distribution within the transfer chamber 30 by arranging all gas inlets 302 and all gas outlets 301 symmetrically about the central axis of the transfer platform 50. This reduces the pressure differential differences between each process chamber 40 and the transfer chamber 30, thereby improving the consistency of the pressure differential between each process chamber 40 and the transfer chamber 30. This helps reduce the risk of airflow disturbances within the transfer chamber 30, thereby improving the consistency of wafer processing quality.

[0079] In a specific example of the present application, a film feed port is provided on the cavity wall of each process chamber 40, and a plurality of film transfer ports corresponding to the plurality of process chambers 40 are provided on the cavity wall of the transfer chamber 30. Each film transfer port is connected to the film feed port of a corresponding process chamber 40 to form a film transfer channel, and the film transfer channel is used for wafer transfer. A gate valve 37 is provided on each film transfer channel, and the gate valve 37 has an open state and a closed state. According to the process of wafer transfer, the gate valve 37 can be switched between the open state and the closed state. In the open state, the film transfer channel is connected, and the wafer can be transferred between the transfer chamber 30 and the process chamber 40. In the closed state, the film transfer channel is cut off, and the transfer chamber 30 and the process chamber 40 are isolated from each other.

[0080] Specifically, the gate valve 37 can be disposed within the film transfer port of the corresponding film transfer channel to control the opening and closing of the film transfer port. Alternatively, the gate valve 37 can be disposed within the film inlet of the corresponding film transfer channel to control the opening and closing of the film inlet. Alternatively, the gate valve 37 can be disposed on the corresponding film transfer channel.

[0081] like Figure 7 and Figure 8 As shown, the number of the gas filling ports 302 is equal to the number of the process chambers 40 , and the multiple gas filling ports 302 correspond one-to-one to the multiple process chambers 40 . Each gas filling port 302 is arranged close to the film transfer port of the film transfer channel connected to the corresponding process chamber 40 .

[0082] During operation of the semiconductor device 100 of this embodiment, since the gas filling port 302 is close to the transfer port of the corresponding transfer channel, when the wafer after the process is transferred from the transfer port of the transfer channel corresponding to any process chamber 40 to the transfer chamber 30, the gas introduced into the transfer chamber 30 through the gas filling port 302 close to the transfer port can be blown to the surface of the wafer, and some particles on the surface of the wafer are blown off, thereby improving the cleanliness of the wafer that has completed the process and effectively improving the product yield.

[0083] As a further optional embodiment, Figure 7 and Figure 8 As shown, the gas outlet 301 can be disposed near the loading chamber 20. On the one hand, the loading chamber 20 and each process chamber 40 disposed along the circumference of the transfer platform 50 are respectively close to the gas outlet 301 and the gas filling port 302. When the pressure in the transfer chamber 30 is maintained at a target pressure value, the gas introduced into the transfer chamber 30 from the gas filling port 302 flows toward the gas outlet 301, so that the area of ​​the transfer chamber 30 near the loading chamber 20 and the area near the process chamber 40 can be covered by the gas flow field, so that the gas fills the transfer chamber 30 as much as possible, and the corner area of ​​the transfer chamber 30 does not form a dead corner, thereby greatly improving the cleanliness of the transfer chamber 30.

[0084] It should be understood that in the semiconductor process, the loading chamber 20 has a vacuum state and an atmospheric state. According to the process of wafer transmission, the loading chamber 20 can switch between the vacuum state and the atmospheric state. Specifically, when the loading chamber 20 is switched from the atmospheric device to the vacuum state, the control valve 38 between the loading chamber 20 and the transfer chamber 30 is opened, and the wafer can be transferred from the loading chamber 20 to the transfer chamber 30. The pressure of the loading chamber 20 is greater than the pressure of the transfer chamber 30 to prevent the gas in the transfer chamber 30 from flowing back to the loading chamber 20. As mentioned in this article, the control valve 38 is used to control the on-off between the loading chamber 20 and the transfer chamber 30. The control valve 38 can be specifically a gate valve. Therefore, since the gas outlet 301 is set close to the loading chamber 20, when the control valve 38 is opened to transfer the wafer, the clean gas in the loading chamber 20 diffuses toward the transfer chamber 30 and flows into the transfer chamber 30, and flows out through the gas outlet 30 in the transfer chamber 30. That is to say, on the other hand, when transferring wafers, in addition to the gas entering the transfer chamber 30 from the inflation port 302 and flowing to the gas outlet 301, the gas in the loading chamber 20 also flows to the gas outlet 301 to form an airflow, thereby strengthening the purge effect on the area where the gas outlet 301 is located in the transfer chamber 30, prompting the particles in the transfer chamber 30 to be more easily transferred to the gas outlet 301 to be extracted, so as to reduce the number of particles accumulated in the transfer chamber 30, thereby improving the cleanliness of the transfer chamber 30, and improving the process quality and product yield.

[0085] Please continue reading Figure 7 and Figure 8 In some embodiments, all the gas filling ports 302 may be disposed on a side of the gas outlet 301 away from the loading chamber 20. When the semiconductor device 100 of this embodiment maintains the pressure in the transfer chamber 30 at a target pressure, the gas introduced into the transfer chamber 30 from the gas filling ports 302 and the gas diffused from the loading chamber 20 into the transfer chamber 30 flow toward the gas outlet 301 from both sides of the gas outlet 301, i.e., the gas outlet 301 is purged in opposite directions. This helps to enhance the purging effect on particles, ensuring that the particles are extracted out of the transfer chamber 30, thereby greatly improving the cleanliness of the transfer chamber 30.

[0086] The inventors of this application have conducted a large number of simulation experiments on the transmission chamber 30 of this embodiment and obtained the following airflow simulation results of the transmission chamber 30: Figure 9 As shown, Figure 9 for Figure 7 The schematic diagram of the airflow simulation in the transfer chamber of the semiconductor equipment is shown in FIG. Figure 9 It can be seen that compared with Figure 1 In the semiconductor device 100 shown, gas is distributed throughout the transfer chamber 30 of this embodiment, including in the corners. There are essentially no dead corners in the transfer chamber 30, and the gas distribution is relatively uniform throughout the transfer chamber 30. The airflow simulation results demonstrate that, while maintaining the same pressure (i.e., the target pressure), the transfer chamber 30 of this embodiment not only has a greater air intake volume, but also has highly uniform gas distribution within the transfer chamber 30, with no dead corners. This demonstrates that the semiconductor device 100 of this embodiment can effectively address the aforementioned technical issues.

[0087] Based on the embodiment in which the plurality of gas filling ports 302 are closely aligned with the film transfer ports of the plurality of film transfer channels, the semiconductor device 100 further includes a plurality of gas intake control devices 35 corresponding to the plurality of gas filling ports 302. The gas intake control devices 35 are configured to adjust the gas flow rate into the corresponding gas filling ports 302. In other words, in this embodiment, the gas flow rate into each gas filling port 302 can be independently adjusted.

[0088] The specific implementation process of the gas filling step of the semiconductor device 100 of this embodiment can be as follows: the gas source is controlled by the gas intake control device 35 to fill the transfer chamber 30 with a flow rate of a preset flow rate value Q d The gas, and then the preset flow value Q dSubstitute the above formula (1) to calculate the current pressure of the transmission chamber 30; determine whether the current pressure of the transmission chamber 30 is equal to the target pressure value. If not, when the current pressure of the transmission chamber 30 is less than the target pressure value, increase the gas flow rate into the transmission chamber 30 by controlling the air intake control device 35; when the current pressure of the transmission chamber 30 is greater than the target pressure value, decrease the gas flow rate into the transmission chamber 30 by controlling the air intake control device 35 until the current pressure of the transmission chamber 30 is equal to the target pressure value. For example, the preset flow value Q d The value range can be: 10sccm≦Q d ≦1000sccm.

[0089] In addition, through such an arrangement, when the wafer that has completed the process is transferred from the process chamber 40 to the transfer chamber 30, an exemplary control process of the semiconductor device 100 of this embodiment is specifically: controlling the gate valve 37 on the wafer transfer channel corresponding to the process chamber 40 to switch to an open state, so that the wafer transfer channel is conductive; increasing the air intake volume of the inflation port 302 corresponding to the wafer transfer port of the wafer transfer channel, and maintaining the pressure of the transfer chamber 30 at the target pressure value.

[0090] With this arrangement, while maintaining the pressure of the transfer chamber 30 unchanged, the air intake volume of the air filling port 302 close to the wafer transfer port of the conductive wafer transfer channel is increased, thereby increasing the gas flow rate blown to the wafer transferred from the process chamber 40 to the transfer chamber 30, and strengthening the purging effect on the wafer transferred out of the process chamber 40, so as to minimize the particles accumulated on the wafer surface, ensure the cleanliness of the wafer that has completed the process, and effectively improve the product yield.

[0091] It should also be pointed out that in this embodiment, since the gas flow rate entering each inflation port 302 can be adjusted independently, the consistency of the pressure difference between each process chamber 40 and the transfer chamber 30 can be improved by adjusting the air intake volume of the inflation port 302 close to the wafer transfer port of the conductive wafer transfer channel. This is conducive to making the cleanliness of the wafers transferred from each process chamber 40 consistent, thereby improving product consistency.

[0092] Exemplarily, when all the transmission channels are cut off, the air intake volume of each inflation port 302 is equal and is q; when one of the transmission channels is turned on, the air intake volume control device 35 corresponding to the inflation port 302 close to the transmission channel is controlled so that the air intake volume of the inflation port 302 increases by q×1 / 4, and accordingly, the sum of the air intake volumes of the other inflation ports 302 decreases by q×1 / 4.

[0093] In some embodiments, the semiconductor device 100 may further include a pressure detection device for detecting the pressure in the transfer chamber 30. The pressure detection device may be implemented by a vacuum gauge, a pressure sensor, or the like.

[0094] By setting it in this way, in the above vacuuming step, the pressure P of the transfer chamber 30 can be determined according to the detection result of the pressure detection device. g In the above-mentioned inflation step, the pressure P of the transmission chamber 30 can be accurately measured based on the detection result of the pressure detection device. g Specifically, when the pressure detection device detects a pressure value lower than the target pressure value, the gas flow rate into the transmission chamber 30 is increased through the air intake control device 35. When the pressure detection device detects a pressure value higher than the target pressure value, the gas flow rate into the transmission chamber 30 is reduced through the air intake control device 35.

[0095] according to Figure 6 In the example shown, the pressure control process of the transmission chamber 30 can be specifically as follows: close the flow regulating valve 36, and evacuate the exhaust pipe 34 through the vacuum pump 31 so that the exhaust pipe 34 reaches a vacuum state; open the flow regulating valve 36, close the flow regulating valve 352, and evacuate the transmission chamber 30 through the vacuum pump 31 until the pressure of the transmission chamber 30 reaches a preset threshold; evacuate the transmission chamber 30 through the high-speed pump 32 until the pressure of the transmission chamber 30 reaches a set value; open the flow regulating valve 352, inflate the transmission chamber 30, and the mass flow controller 351 adjusts the gas flow rate entering the transmission chamber 30 until the pressure of the transmission chamber 30 reaches the target pressure value.

[0096] It is understandable that the implementation of the intake air quantity control device 35 includes but is not limited to the following possibilities.

[0097] As a feasible implementation method, the air intake control device 35 includes a mass flow controller (MFC) 351 provided on the charging pipeline 33 , and the mass flow controller 351 is used to control the gas flow on the corresponding charging pipeline 33 .

[0098] As another feasible implementation, the air intake control device 35 includes a pressure controller and a flow control valve 352 provided on the charging line 33. The pressure controller is used to control the gas pressure in the corresponding charging line 33, and the flow control valve 352 is used to adjust the gas flow in the corresponding charging line 33. The flow control valve 352 can be implemented as any of a butterfly valve, a needle valve, a gate valve, and a solenoid valve. The location of the flow control valve 352 is not restrictive and can be installed on the charging line 33 or in the corresponding charging port 302.

[0099] Of course, in the embodiment where the intake air quantity control device 35 includes a mass flow controller 351, as Figure 6As shown, the air intake control device 35 may further include a flow regulating valve 352 , which is used to regulate the gas flow of the corresponding charging pipeline 33 .

[0100] In the embodiment where the vacuum pump group is provided with a vacuum pump 31 and the vacuum pump 31 is connected in series with the high-speed pump 32, please continue to refer to Figure 6 As shown, the pressure control system may further include a flow regulating valve 36 disposed on the exhaust line 34 to adjust the exhaust speed. The flow regulating valve 36 may be implemented as any one of a butterfly valve, an isolation valve, a needle valve, a pneumatic valve, and a solenoid valve. In this embodiment, before evacuating the transfer chamber 30, the flow regulating valve 36 may be closed, the exhaust pump assembly may be started to evacuate the exhaust line 34 until the pressure in the exhaust line 34 reaches the ultimate vacuum degree of the exhaust pump assembly, and then the flow regulating valve 36 may be opened to evacuate the transfer chamber 30. For example, if the exhaust pump assembly is a dry pump with an ultimate vacuum degree of 0.01 Torr to 0.001 Torr, the flow regulating valve 36 may be opened after the pressure in the exhaust line 34 reaches 0.01 Torr to 0.001 Torr.

[0101] Figure 10 This is a flow chart of a cleaning method provided in one embodiment of the present application. Figure 10 The present invention also provides a cleaning method for the semiconductor device 100 described in the above embodiments of the present invention. The cleaning method specifically includes the following steps:

[0102] S10 , vacuuming the transfer chamber 30 by using the vacuum pump assembly until the pressure of the transfer chamber 30 reaches a preset threshold.

[0103] The purpose of this step is to use the vacuum pump assembly to pre-pump the transfer chamber 30, reducing the pressure in the transfer chamber 30 from atmospheric pressure (e.g., 760 Torr) to a preset threshold, i.e., achieving a low vacuum level in the transfer chamber 30. The preset threshold refers to the starting pressure of the high-speed pump 32.

[0104] S20 , evacuating the transfer chamber 30 by the high-speed pump 32 until the pressure in the transfer chamber 30 reaches a set value.

[0105] The purpose of this step is to use the high-speed pump 32 to evacuate the transfer chamber 30, so that the transfer chamber 30 can reach a high vacuum level. The set value is less than a preset threshold. The high-speed pump 32 does not operate until the pressure in the transfer chamber 30 reaches the preset threshold.

[0106] S30 , supplying gas to the plurality of gas filling ports 302 to fill the transfer chamber 30 with gas, so that all corner areas of the transfer chamber 30 can be purged with gas.

[0107] The preset threshold value may be greater than or equal to 0.1 Torr and less than or equal to 1 Torr. The preferred range of the set value is 0.0001 Torr to 0.000001 Torr.

[0108] Since the high pumping speed pump 32 in this embodiment has a high pumping speed, when the transmission chamber 30 is cleaned using the cleaning method, the pressure P in the transmission chamber 30 is g Under the same premise, the transfer chamber 30 in this embodiment has a greater air intake volume, increasing the gas flow rate for purging the transfer chamber 30. This improves the purging effect and, in turn, has a beneficial effect on improving the cleanliness of the transfer chamber 30, thereby improving process quality and product yield. Furthermore, because the gas outlet 301 and the multiple gas filling ports 302 are distributed in a manner that allows each corner area of ​​the polygonal transfer chamber 30 to be purged with gas, the corner areas are minimized from forming dead corners. This effectively prevents the corner areas within the transfer chamber 30 from becoming dead corners and accumulating particles, significantly improving the cleanliness of the transfer chamber 30 and ensuring process quality and product yield.

[0109] For example, the specific implementation process of S30 may include: supplying gas to the multiple gas inlets 302 to inflate the transfer chamber 30, so that each corner area of ​​the transfer chamber 30 can be purged with gas until the pressure of the transfer chamber 30 reaches the target pressure value. On this basis, when the multiple gas inlets 302 are closely aligned with the film transfer ports of the film transfer channels connected to the multiple process chambers 40, and the semiconductor equipment 100 is equipped with multiple gas intake control devices 35 corresponding to the multiple gas inlets 302, after S30, the cleaning method also includes S40.

[0110] S40, when the film transfer channel corresponding to any process chamber 40 is turned on, the gas flow rate entering the gas filling port 302 corresponding to the process chamber 40 is controlled to be greater than the gas flow rate entering other gas filling ports 302, and the pressure of the transfer chamber 30 is maintained at the target pressure value.

[0111] According to the cleaning method, when the wafer that has completed the process is transferred from the process chamber 40 to the transfer chamber 30, while maintaining the pressure of the transfer chamber 30 unchanged, the air intake volume of the inflation port 302 close to the wafer transfer port of the conductive wafer transfer channel is increased, thereby increasing the gas flow rate blown to the wafer transferred from the process chamber 40 to the transfer chamber 30, and strengthening the purging effect on the wafer transferred from the process chamber 40, so that the particles accumulated on the wafer surface are as small as possible, ensuring the cleanliness of the wafer that has completed the process, and effectively improving the product yield.

[0112] Moreover, the gas flow rate entering each inflation port 302 can be adjusted independently. By adjusting the air intake volume of the inflation port 302 close to the wafer transfer port of the conductive wafer transfer channel, the consistency of the pressure difference between each process chamber 40 and the transfer chamber 30 can be improved. This is conducive to making the cleanliness of the wafers transferred from each process chamber 40 consistent, thereby improving product consistency.

[0113] For example, when multiple gas filling ports 302 are close to the film transfer ports of the film transfer channels connected to multiple process chambers 40 in a one-to-one correspondence, and the semiconductor equipment 100 is provided with multiple air intake control devices 35 corresponding to the multiple gas filling ports 302, the specific implementation process of "providing gas to the multiple gas filling ports 302 to inflate the transfer chamber 30 until the pressure of the transfer chamber 30 reaches the target pressure value" in the above S30 may include the following sub-steps.

[0114] S31, filling the transmission chamber 30 with gas at a preset flow rate. For example, the preset flow rate Q d The value range can be: 10sccm≦Q d ≦1000sccm.

[0115] S32 , determining the current pressure of the transmission chamber 30 .

[0116] This step can be achieved by setting the preset flow value Q in S31 d Substitute into formula (1) to calculate, where P j The value of is the ultimate pressure of the high-speed pump 32 , and the value of S is the pumping speed of the high-speed pump 32 .

[0117] S33, determining whether the current pressure reaches the target pressure value.

[0118] S34: If not, adjust the gas flow rate into the multiple inflation ports and return to step S32.

[0119] When the current pressure of the transmission chamber 30 is lower than the target pressure value, the gas flow rate into the multiple inflation ports is increased by controlling the air intake control device 35. When the current pressure of the transmission chamber 30 is higher than the target pressure value, the gas flow rate into the multiple inflation ports is reduced by controlling the air intake control device 35.

[0120] Alternatively, in an alternative embodiment, S30 may also be: during the inflation process, according to the detection result of the pressure detection device, controlling the gas flow rate entering the transmission chamber 30 so that the pressure of the transmission chamber 30 reaches the target pressure value.

[0121] Specifically, in step S40 , the gas flow rate introduced into the gas filling port 302 corresponding to the process chamber 40 may be controlled to be 25% greater than the gas flow rate of the gas filling port 302 in step S30 .

[0122] When the vacuum pump group is provided with a vacuum pump 31 , the vacuum pump 31 is connected in series with the high-speed pump 32 , and a flow regulating valve 36 is provided on the vacuum pipeline 34 , before S10 , the cleaning method may further include S50 .

[0123] S50 , closing the flow regulating valve 36 , and evacuating the exhaust pipeline 34 by the exhaust pump assembly until the pressure of the exhaust pipeline 34 reaches the ultimate vacuum degree of the vacuum pump 31 .

[0124] Thus, before rough pumping the transfer chamber 30, the exhaust pipe 34 is emptied first, and then the flow regulating valve 36 is opened in S10 to roughly pump the transfer chamber 30. The vacuum pump 31 can be, for example, a dry pump with a limit vacuum degree of 0.01 Torr to 0.001 Torr.

[0125] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor device, characterized in that: include: A transfer chamber, wherein a gas outlet and a plurality of gas charging ports are provided on a cavity wall of the transfer chamber, the plurality of gas charging ports are connected to a gas source, and the gas outlet and the plurality of gas charging ports are distributed in a manner such that each corner area of ​​the transfer chamber can be purged with gas; The vacuum pump group and the high-speed pump are both capable of evacuating the transmission chamber; the pumping speed of the vacuum pump group is lower than the pumping speed of the high-speed pump, and when the vacuum pump group evacuates the transmission chamber until the pressure reaches a preset threshold, the high-speed pump starts to operate.

2. The semiconductor device according to claim 1, wherein The cross-sectional shape of the transmission chamber is an axisymmetric figure, the multiple inflation ports are symmetrically distributed with the central axis of the transmission chamber as the symmetry axis, and the gas outlets are symmetrically arranged about the symmetry axis.

3. The semiconductor device according to claim 2, wherein: It also includes a plurality of process chambers corresponding one to one with the plurality of inflation ports, each of the process chambers being connected to the transfer chamber via a film transfer channel, the film transfer channel being provided with a gate valve, the gate valve being used to control the conduction or cutoff of the film transfer channel, the film transfer channel having a film transfer port formed on the transfer chamber, and the inflation port being arranged close to the film transfer port of the film transfer channel to which the corresponding process chamber is connected.

4. The semiconductor device according to claim 2, wherein The invention also includes a loading chamber, the loading chamber is arranged on the peripheral side of the transfer chamber, the loading chamber is used to transfer wafers in or out of the atmospheric environment, and the air outlet is arranged close to the loading chamber; All the inflation ports are arranged on a side of the gas outlet away from the loading chamber.

5. The semiconductor device according to claim 1, wherein It also includes a plurality of air intake control devices corresponding one to one with the plurality of air charging ports, and the air intake control devices are used to adjust the gas flow entering the corresponding air charging ports.

6. The semiconductor device according to claim 5, wherein Each of the inflation ports is connected to the gas source via an inflation pipeline; The air intake control device includes a mass flow controller provided on the inflation pipeline, and the mass flow controller is used to control the gas flow on the corresponding inflation pipeline; Alternatively, the air intake control device includes a pressure controller and a flow regulating valve arranged on the inflation pipeline, the pressure controller is used to control the gas pressure on the corresponding inflation pipeline, and the flow regulating valve is used to adjust the gas flow of the corresponding inflation pipeline.

7. A cleaning method applied to the semiconductor device according to any one of claims 1 to 6, characterized in that: The cleaning method comprises: The transfer chamber is evacuated by a vacuum pump assembly until the pressure in the transfer chamber reaches a preset threshold; The transmission chamber is evacuated by a high-speed pump until the pressure of the transmission chamber reaches a set value; Gas is provided to the plurality of gas filling ports to fill the transfer chamber with gas, so that each corner area of ​​the transfer chamber can be purged with gas.

8. The cleaning method according to claim 7, characterized in that When the semiconductor device includes a plurality of gas intake control devices corresponding to the plurality of gas filling ports, and the plurality of gas filling ports are in close correspondence with the film transfer ports of the film transfer channels corresponding to the plurality of process chambers; The supplying of gas to the plurality of gas charging ports to inflate the transfer chamber so that each corner area of ​​the transfer chamber can be purged by the gas specifically includes: supplying gas to the plurality of gas charging ports to inflate the transfer chamber so that each corner area of ​​the transfer chamber can be purged by the gas until the pressure of the transfer chamber reaches a target pressure value; Furthermore, after the pressure of the transmission chamber reaches the target pressure value, the cleaning method further includes: When the film transfer channel corresponding to any process chamber is connected, the gas flow rate entering the gas inlet corresponding to the process chamber is controlled to be greater than the gas flow rate entering other gas inlets, and the pressure of the transfer chamber is maintained at the target pressure value.

9. The cleaning method according to claim 8, characterized in that Inflating the transmission chamber until the pressure of the transmission chamber reaches a target pressure value specifically includes: Filling the transmission chamber with gas at a preset flow rate; determining a current pressure in the transfer chamber; Determining whether the current pressure reaches the target pressure value; If not, the gas flow rate into the plurality of gas filling ports is adjusted, and the current pressure of the transmission chamber is determined again.

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